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MEOUNG-WHAN Cho  CHO Meoung-Whan

ORCIDConnect your ORCID iD *help
Researcher Number 00361171
Affiliation (based on the past Project Information) *help 2007: Tohoku University, 金属材料研究所, 准教授
2005 – 2006: 東北大学, 金属材料研究所, 助教授
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering
Except Principal Investigator
Applied materials science/Crystal engineering
Keywords
Principal Investigator
窒化物半導体 / 光素子 / 薄膜成長 / Nitide semiconductors / Optical device / Thin film growth / MBE / HVPE / GaNエピタキシャル / CrN緩衝層 … More
Except Principal Investigator
… More MBE / ZnO / surfactant / epitaxial growth / nitride semiconductors / II-VI族化合物 / 窒素 / p型ドーピング / 低温成長 / サーフアクタント / 分子線エピタキシー / 酸化物半導体 / サーファクタント / エピタキシ成長 / 窒化物半導体 / 非線形 / 誘電体物性 / 光物性 / 分子線エピタキシ Less
  • Research Projects

    (4 results)
  • Research Products

    (36 results)
  • Co-Researchers

    (3 People)
  •  Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layerPrincipal Investigator

    • Principal Investigator
      HANADA Takashi, ちょ 明煥
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  周期分極反転した酸化亜鉛による励起子共鳴非線形波長変換

    • Principal Investigator
      HANADA Takashi
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  Surfactant MBE of ZnO and its applications to the growh of p-type doping

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  The development of AlGaN template using CrN buffer layerPrincipal Investigator

    • Principal Investigator
      MEOUNG-WHAN Cho
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University

All 2009 2008 2007 2006 2005

All Journal Article Presentation Patent

  • [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

    • Author(s)
      S. W. Lee, J. S. Ha, Hyun-Jae Lee, Hyo-Jong Lee, H. Goto, T. Hanada, T. Goto, K. Fujii, M. W. Cho, and T. Yao
    • Journal Title

      Appl. Phys. Lett 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19560008
  • [Journal Article] Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices2007

    • Author(s)
      SW.Lee, DC.Oh, H.Goto, JS.Ha, HJ.Lee, T.Hanada, MW.Cho, et al.
    • Journal Title

      Physica Status Solidi C 4・1

      Pages: 37-40

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Analysis of the relation between leakage current and dislocations in GaN-based Light-emitting devices2007

    • Author(s)
      SW.Lee, DC.0h, H Goto, JS Ha, HJ Lee, T Hanada, MW.Cho, SK.Hong, HY.Lee, SR.Cho, JW.Choi, JH.Choi, JH.Jang, JE.Shin, JS.Lee, T Yao
    • Journal Title

      Physica Status Solidi C 4・1

      Pages: 37-40

    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Growth of thick GaN layers on c-plane sapphire substrates using stress absorbing layer (SAL)2007

    • Author(s)
      H Goto, SW Lee, J Kinomoto, ST Kim, HC. Ko, MW. Cho, T Yao
    • Journal Title

      Physica Status Solidi C 4・1

      Pages: 116-119

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Growth of thick GaN layers on c-plane sapphire substrates using stress absorbing layer (SAL),2007

    • Author(s)
      H Goto, SW Lee, J Kinomoto, ST Kim, H C. Ko, MW.Cho, T Yao
    • Journal Title

      Physica Status Solidi C 4・1

      Pages: 116-119

    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] 0rigin of forward leakage current in GaN-based light-emitting devices2006

    • Author(s)
      Lee SW, Oh DC, Goto H, Ha JS, Lee HJ, Hanada T, Cho MW, Yao T, Hong SK, Lee HY, Cho SR, Choi JW, Choi JH, Jang JH, Shin JE, Lee JS
    • Journal Title

      Applied Physics Letters 89

      Pages: 132117-132117

    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Structural properties of CrN buffers for GaN growth2006

    • Author(s)
      Lee WH, Im IH, Minegishi T, Hanada T, Cho MW, Yao T, Oh DC, Han CS, Koo KW, Kim JJ, Sakata 0, Sumitani K, Cho SJ, Lee HY, Hong SK, Kim ST
    • Journal Title

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3

      Pages: 928-933

    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Structural properties of CrN buffers for GaN growth2006

    • Author(s)
      Lee.WH, Im.IH, Minegishi.T, Hanada.T, Cho MW, Yao T, et al.
    • Journal Title

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 3

      Pages: 928-933

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Selective Growth of Vertically-Aligned ZnO Nano-Needles.2006

    • Author(s)
      SH Lee, WH Lee, SW Lee, H Goto, T Baba, MW Cho, T Yao, HJ Lee, T Yasukawa, T Matsue, H Ko
    • Journal Title

      Journal of Nanoscience and Nanotechnology 6

      Pages: 3351-3354

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Origin of forward leakage current in GaN-based light-emitting devices2006

    • Author(s)
      Lee SW, Oh DC, Goto H, Ha JS, Lee HJ, Hanada T, Cho MW, Yao T, et al.
    • Journal Title

      Applied Physics Letters 89

      Pages: 132117-132117

    • NAID

      120002337930

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Novel buffer layer for the growth of the GaN on c-sapphire2006

    • Author(s)
      WH Lee, SW Lee, H Goto, H ko, MW Cho, T Yao
    • Journal Title

      Physica Status Solidi C 3・6

      Pages: 1388-1391

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Surfactant-mediated molecular beam epitaxy of ZnO.2006

    • Author(s)
      Suzuki H, Minegishi T, Fujimoto G, Cho MW, Yao T
    • Journal Title

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49(3)

      Pages: 1266-1270

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Growth and characterization of HVPE GaN on c-sapphire with CrN buffer layer2005

    • Author(s)
      H.Goto, W.H.Lee, J.Kinomoto, S.T.Kim, M.W.Cho, T.Yao
    • Journal Title

      INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 369-372

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/C-sapphire2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H.Suzuki, T.Hanada, MW.Cho, T.Yao, A.Setiawan
    • Journal Title

      JOURNAL OF APPLIED PHYSICS 98(5)

      Pages: 54911-54911

    • NAID

      120001182191

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] The effect of surface treatment on Zinc Oxide2005

    • Author(s)
      H.Suzuki, T.Minegishi, Z.Vashaei, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 385-388

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Issues in ZnO homoepitaxy2005

    • Author(s)
      MW Cho, C.Harada, H.Suzuki, T.Minegishi, T.Yao, H.Ko, K.
    • Journal Title

      Superlattices and Microstructures 38(4-6)

      Pages: 349-363

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho
    • Journal Title

      APPLIED PHYSICS LETTERS 86(3)

      Pages: 329090-329090

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Issues in ZnO homoepitaxy2005

    • Author(s)
      MW Cho
    • Journal Title

      Superlattices and Microstructures 38(4-6)

      Pages: 349-363

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structural variation of cubic and hexagonal MgxZu1-x0 layers grown on MgO(111) /c-sapphire2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H.Suzuki, T.Hanada, MW.Cho
    • Journal Title

      JOURNAL OF APPLIED PHYSICS 98(5)

      Pages: 54911-54911

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structure properties and phase evolution of MgxZn1-x0 layers grown on c-sapphire by P-MBE2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H, Suzuki, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 415-418

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering2005

    • Author(s)
      KW.Jang, T.Minegishi, T.Suzuki, SK/Hong, DC.Oh, T.Hanada, MW.Cho, T.Yao
    • Journal Title

      JOURNAL OF CERAMIC PRGCESSING RESEARCH 6(2)

      Pages: 167-183

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Issues in ZnO homoepitaxy2005

    • Author(s)
      MW Cho, C.Harada, H.Suzuki, T.Minegishi, T.Yao, H.Ko, K.Maeda, I.Nikura
    • Journal Title

      Superlattices and Microstructures 38(4-6)

      Pages: 349-363

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, N.Makino, T.Hanada, MW.Cho, T.Yao
    • Journal Title

      APPLIED PHYSICS LETTERS 86(3)

      Pages: 329090-329090

    • NAID

      120001182186

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.So
    • Journal Title

      JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)

      Pages: 1281-1285

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
    • Journal Title

      APPLIED PHYSICS LETTERS 86(4)

      Pages: 42110-42110

    • NAID

      120001182187

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] CrN buffer layer study for GaN growth using molecular beam epitaxy (MBE)2005

    • Author(s)
      Lee W.H., Kim JJ, Lee HS, Zahra V, Kim ST, Cho MW, Yao T
    • Journal Title

      INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 365-368

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Journal Article] ZnO epitaxial layers grown on APO c-sapphire substrate with MgO buiter by plasma-assisted molecular beam epitaxy(p-MBE)2005

    • Author(s)
      MW.Cho, A.Setiawan, HJ.Ko, SK.Hong, T.Yao
    • Journal Title

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(4)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structure properties and phase evolution of MgxZn1-xO layers grown on c-sapphire by P-MBE2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H, Suzuki, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 415-418

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] ZnO epitaxial layers grown on APO c-sapphire substrate with MgO buiter by plasma-assisted molecular beam epitaxy(P-MBE)2005

    • Author(s)
      MW.Cho, A.Setiawan, HJ.Ko, SK.Hong, T.Yao
    • Journal Title

      SEMICUNDUCTOR SCIENCE AND TECHNOLOGY 20(4)

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] ZnO epitaxial layers grown on APO c-sapphire substrate with Mg0 buiter by plasma-assisted molecular beam epitaxy (p-MBE)2005

    • Author(s)
      MW.Cho
    • Journal Title

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(4)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.Song, HJ.Ko
    • Journal Title

      JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)

      Pages: 1281-1285

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Characteristics of Schottky contacts to ZnO : N layers grown by molecular- beam epitaxy2005

    • Author(s)
      DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
    • Journal Title

      APPLIED PHYSICS LETTERS 86(4)

      Pages: 42110-42110

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Growth and characterization of HVPE CaN on c-sapphire with CrN buffer layer2005

    • Author(s)
      H.Goto, W.H.Lee, J.Kinomoto, S.T.Kim, M.W.Cho, T.Yao
    • Journal Title

      INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 369-372

    • Data Source
      KAKENHI-PROJECT-17560002
  • [Patent] GaN単結晶成長方法,GaN系素子製造方法およびGaN系素子2005

    • Inventor(s)
      八百 隆文, ちょ 明煥
    • Industrial Property Rights Holder
      東北テクノアーチ
    • Industrial Property Number
      2005-108072
    • Filing Date
      2005-04-04
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Patent] GaN単結晶成長方法,GaN系素子製造方法およびGaN系素子2005

    • Inventor(s)
      八百隆文ちょ明煥
    • Industrial Property Rights Holder
      東北テクノアーチ
    • Industrial Property Number
      2005-108072
    • Filing Date
      2005-04-04
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560002
  • [Presentation] Crystallo -graphic Investigation of Nitride C- Sapphire Substrate by Grazing Incidence X-ray Diffraction and Transmission Electron Microscopy2008

    • Author(s)
      H. J. Lee, J. S. Ha, S. K. Hong, S. W. Lee, H. J. Lee, S. H. Lee, T. Minegishi, T. Hanada, M. W. Cho, and T. Yao
    • Organizer
      The International Conference on the Textures of Materials
    • Place of Presentation
      Pittsburgh, USA
    • Data Source
      KAKENHI-PROJECT-19560008
  • 1.  HANADA Takashi (80211481)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 17 results
  • 2.  YAO Takafumi (60230182)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 16 results
  • 3.  INHO Im (00400408)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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