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YAO Takafumi  八百 隆文

ORCIDConnect your ORCID iD *help
Researcher Number 60230182
External Links
Affiliation (based on the past Project Information) *help 2009 – 2012: Tohoku University, 学際科学国際高等研究センター, 客員教授
2007: 学際科学国際高等研究センター, 教授
2005 – 2006: 東北大学, 学際科学国際高等研究センター, 教授
1996 – 2002: Tohoku University Institute for Materials Research, Professor, 金属材料研究所, 教授
1991 – 1995: 広島大学, 工学部, 教授
1994: Tohoku University, Institute for Materials Research, Professor, 金属材料研究所, 教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Applied materials science/Crystal engineering / Science and Engineering / Electronic materials/Electric materials / Applied materials / Applied materials science/Crystal engineering
Except Principal Investigator
表面界面物性 / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering
Keywords
Principal Investigator
走査トンネル顕微鏡 / ZnO / 歪超格子 / 分子線エピタキシ- / II-VI族化合物 / エピタキシ成長過程 / 固相エピタキシ / 窒化物半導体 / GaN / STM … More / ナノ構造 / ZnSe / ZnCdSe / MBE / IIーVI族化合物半導体 / 光物性 / 結晶成長過程 / 反射高速電子線回折 / ガスリ-ス分子線エピタキシ- / 量子井戸 / 伝導制御 / イオンビーム分析 / 反射高速電子約回析 / 分子約エピタキシ / 反射高速電子線回析 / 分子性エピタキシ / 金属エピタキシ成長 / 成長初期過程 / 表面再配列構造 / マンガン酸化物 / ペロブスカイト / 分子線エピタキシ / 金属-絶縁体転移 / 酸化物薄膜 / プラズマ援用分子線エピタキシ / ペロブスカイト型マンガン酸化物 / RHEED振動 / 強磁性 / 有機FET / 有機機能デバイス / MIS構造 / アントラセン / 電気特性 / 有機薄膜 / LED / 紫外LED / ケミカル・リフト・オフ / 発光ダイオード(LED) / AlGaN / InGaN / CrN / ケミカルリフトオフ / 窒化 / 窒化ガリウム / m面GaN基板 / ハイドライド気相成長法(HVPE) / 積層欠陥 / 原子・分子操作 / 選択的化学反応 / 半導体表面 / 原子・分子吸着 / 材料プロセシング / 電子線誘起化学反応 / 分子吸着過程 / 電界蒸発 / 近接効果 / 走査プローブ顕微鏡 / 単原子操作 / 単分子操作 / 吸着分子 / ハロゲンガス / レストアトム / アドアトム / 電子的励起 / ナノテクノロジー / 表面反応プロセス / 電子線励起プロセス / 材料プロセス / atom / molecule manipulation / selective chemical reaction / semiconductor surface / molecule adsorption / materials processing / 走査容量顕微鏡(SCaM) / 局所電気特性評価 / 原子間力顕微鏡(AFM) / 走査トンネル顕微鏡(STM) / MOS構造 / 電荷蓄積 / メモリー / Scanning Capacitance Microscopy / Nano-scale characterization of electrical properties / Atomic Force Microscopy / Scanning tunneling microscopy / MOS structures / Charge storage / Memory deivces / 半導体量子ドット / 短波長光エレクトロニクス / 半導体量子構造 / 励起子光物性 / 量子ドット / ワイドギャップ半導体 / 量子構造 / プラズマ援用MBE / CdSe / semiconductor quantum dot / short-wavelength optoelectronics / nano-structure / semiconducto quantum structure / exciton-based optical properties / エピタキシ成長 / サーファクタント / 酸化物半導体 / 分子線エピタキシー / サーフアクタント / 低温成長 / p型ドーピング / 窒素 / nitride semiconductors / epitaxial growth / surfactant … More
Except Principal Investigator
プロセス / 単電子デバイス / ナノ構造 / 半導体 / 量子構造 / デバイス / 評価技術 / 単量子効果 / 原子スケール制御 / 単電子トランジスタ / クーロンブロッケード / 集積回路 / 量子現象 / トンネル現象 / プラズマ / 環境 / 省資源 / 省エネルギー / 量子反応 / イオン / ラジカル / ヘテロ界面反応制御 / AlNバッファー層 / ZnO基板 / 低温成長 / RHEED / XPS / SIMS / AFM / semiconductor / quantum structure / device / process / characterization / イメイジングプレイト(IP) / 走査型アトムプローブ(SAP) / 電界放射電子のエネルギー分布 / Si(001)表面ステップ / 電界イオン顕微鏡(FIM) / 電界放射顕微鏡(FEM) / 混晶半導体ナノ構造 / 走査型トンネル顕微鏡 / 分光(STM / STS) / フタロシアニン / (N11)GaAS / 走査型トンネル顕微鏡(STM) / 原子移動 / イメイジングプレイド(IP) / アトムプローブ(A-P) / 原子間力顕微鏡(AFM) / トンネル確率 / field emission microscope (FEM) / field ion microscope (FIM) / atom manipulation / electron spectroscopy / scanning tunneling spectroscopy (STS) / atom probe (AP) / field emission electron spectroscopy (FEES) / scanning tunneling microscope (STM) / Semiconductor / Quantum structure / Device / Process / Characterization / 量子ドット / 結合量子ドット / 自己形成 / 選択成長 / 微細加工 / 量子細線レーザー / 成長モード / 表面吸着 / 表面エネルギー / ドット形成過程 / 再成長 / 表面修飾 / Single electron devices / Quantum Dot / Coupled Quantum Dots / Self-organized growth / Selective growth / Nano Fabication / Nano Sturcture / Quantum wire laser / IIーVI族化合物半導体 / p型ZnSe / キャリアー補償機構 / 光学的手法 / 電気的評価 / イオンビーム / 補償モデル / ZnSe:N順位図 / II-VI族半導体 / P型ZnSe / イオンピーム法 / ZnSe:N準位図 / ZnSe / p型半導体 / 窒素ドープ / ホール濃度 / 補償機構 / II-VI Semiconductor / P-type ZnSe / Carrier Compensation Mechanism / Optical spectroscopy / Electrical Characterization / Ion Beam Analysis / Compensation Model / Energy Level Diagram for ZnSe : N Less
  • Research Projects

    (22 results)
  • Research Products

    (61 results)
  • Co-Researchers

    (56 People)
  •  2インチクラスm面GaN自立基板の作製Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      2012
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDsPrincipal Investigator

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  ヘテロ界面制御によるZnO基板上への高品質GaNの低温成長

    • Principal Investigator
      INHO Im
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  Surfactant MBE of ZnO and its applications to the growh of p-type dopingPrincipal Investigator

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  有機半導体の分子線エピタキシとエレクトロニクス応用Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      2002
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  遷移金属酸化物薄膜のスピン・フォトン量子の競合とその応用Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Review Section
      Science and Engineering
    • Research Institution
      Tohoku University
  •  環境調和量子反応制御プロセスに関する調査研究

    • Principal Investigator
      後藤 俊夫
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      表面界面物性
    • Research Institution
      Nagoya University
  •  Construction of wide gap semiconductor nano-Quantum DotsPrincipal Investigator

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (A).
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  Development of nano-scale characterization technology for semicondutors and devices with scanning capacitance microscopePrincipal Investigator

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  •  "Development of Novel Technology for Integratio of Single Electron Devices"

    • Principal Investigator
      KAWABE Mitsuo
    • Project Period (FY)
      1996 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      TSUKUBA UNIVERSITY
  •  Carrier Compensation Mechanism in Wide Bandgap II-VI Semiconductors

    • Principal Investigator
      ZHU Zigiung
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
  •  単電子エレクロニクスの基礎

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Hokkaido University
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Institution
      Tokyo Institute of Technology
  •  走査トンネル顕微鏡/反射高速電子線回析複合評価装置によるエピタキシ成長過程の研究Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  単量子物性のための単原子制御

    • Principal Investigator
      金原 粲
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      The University of Tokyo
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Overseas Scientific Survey.
    • Research Institution
      Tokyo Institute of Technology
  •  ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS

    • Principal Investigator
      NISHIKAWA Osamu
    • Project Period (FY)
      1993 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      KANAZAWA INSTITUTE OF TECHNOLOGY
  •  II-VI族化合物半導体歪超格子の作製とその光物性に関する研究Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  走査トンネル顕微鏡/反射高速電子線回折複合評価装置によるエピタキシ成長過程の研究Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  IIーVI族化合物半導体歪超格子の作製とその光物性に関する研究Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  走査トンネル顕微鏡/反射高速電子線回折複合評価装置による結晶成長過程の研究Principal Investigator

    • Principal Investigator
      八百 隆文
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  Development of atomic-scale materials processing utilizing electron-beam induced selective chemical reactionPrincipal Investigator

    • Principal Investigator
      YAO Takafumi
    • Project Period (FY)
      1991 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Applied materials
    • Research Institution
      Tohoku University
      Hiroshima University

All 2013 2012 2011 2010 2009 2007 2006 2005 2000

All Journal Article Presentation Book Patent

  • [Book] 発光ダイオード2011

    • Author(s)
      八百隆文、藤井克司、神門賢二
    • Total Pages
      352
    • Publisher
      朝倉書店
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Book] Oxide and Nitride Semiconductors2009

    • Author(s)
      T. Yao and S. K. Hong
    • Total Pages
      517
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Book] Zinc Oxide and Related Materials2007

    • Author(s)
      Jurgen Christen, Chennupati Jagadish, David C. Look, Takafumi Yao, Frank Bertram
    • Total Pages
      237
    • Publisher
      Materials Research Society
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Book] ZnO系の最新技術と応用2007

    • Author(s)
      八百隆文, 花田貴 等他21名
    • Total Pages
      440
    • Publisher
      シーエムシー出版
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Book] ZnO系の最新技術と応用2007

    • Author(s)
      八百隆文, 花田貴, 等他21名
    • Total Pages
      440
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Book] E-MRS Symposium Proceedings Spring 2006 : ZnO and Related Compounds.2006

    • Author(s)
      J.Christen, B.Gill, A.Hooemann, D.C.Look, T.Yao
    • Total Pages
      394
    • Publisher
      E-MRS
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] HVPE growth of high-quality self-standing GaN thick layers by HVPE2013

    • Author(s)
      T. Sato, S. Okano, T. Goto, T. Yao, R. Seto, A. Sato and H. Goto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656198
  • [Journal Article] HVPE growth of self-standing thick GaN layers with novel pit-induced buffer layers2013

    • Author(s)
      T. Sato, S. Okano, T. Goto, T. Yao, A. Sato and H. Goto
    • Journal Title

      physica status solidi (c)

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656198
  • [Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0. 67)2011

    • Author(s)
      Jeong, M ; Lee, HS ; Han, SK ; Shin, EJ ; Hong, SK ; Lee, JY ; Song, JH ; Yao, T
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 208 Pages: 2737-2740

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

    • Author(s)
      Cho, Y ; Choi, S ; Kil, GS ; Lee, HJ ; Yao, T ; Yoo, J ; Kwon, J ; Chang, J
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 325 Pages: 85-89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Misoriented grains with a preferential orientation in a-plane oriented GaN layers2011

    • Author(s)
      Tokumoto, Y ; Lee, HJ ; Ohno, Y ; Yao, T ; Yonenaga, I
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 334 Pages: 80-83

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film2011

    • Author(s)
      Cho, Y; Choi, S; Kil, GS; Lee, HJ; Yao, T; Yoo, J; Kwon, J; Chang, J
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 325 Pages: 85-88

    • DOI

      10.1016/j.jcrysgro.2011.04.034

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)2011

    • Author(s)
      Jeong, M; Lee, HS; Han, SK; Shin, EJ; Hong, SK; Lee, JY; Song, JH; Yao, T
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 208 Pages: 2737-2740

    • DOI

      10.1002/pssa.201127307

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

    • Author(s)
      Lee, SW ; Ha, JS ; Lee, HJ ; Lee, HJ ; Goto, H ; Hanada, T ; Goto, T ; Fujii, K ; Cho, MW ; Yao, T
    • Journal Title

      JOURNAL OF PHYSICS D-APPLIED PHYSICS

      Volume: 43 Pages: 175101-175101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010

    • Author(s)
      Jung, M ; Chang, J ; Lee, H ; Ha, JS ; Park, JS ; Park, S ; Fujii, K ; Yao, T ; Kil, GS ; Lee, S ; Cho, M ; Whang, S
    • Journal Title

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

      Volume: 28 Pages: 623-626

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010

    • Author(s)
      Lee, SW; Ha, JS; Lee, HJ; Lee, HJ; Goto, H; Hanada, T; Goto, T; Fujii, K; Cho, MW; Yao, T
    • Journal Title

      JOURNAL OF PHYSICS D-APPHED PHYSICS

      Volume: 43 Pages: 175101-175101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Use of Polytypes to Control Crystallographic Orientation of GaN2010

    • Author(s)
      Lee, HJ ; Yao, T ; Kim, C ; Chang, J
    • Journal Title

      CRYSTAL GROWTH & DESIGN

      Volume: 10 Pages: 5307-5311

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article]2010

    • Author(s)
      八百隆文、藤井克司、神門賢二
    • Journal Title

      発光ダイオード(朝倉書店)

      Pages: 1-352

    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

    • Author(s)
      Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
    • Journal Title

      Applied Surface Science

      Volume: 255 Pages: 8582-8586

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

    • Author(s)
      Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K. Cho MW. Yao T
    • Journal Title

      Applied Physics Letters 94

      Pages: 82105-82105

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

    • Author(s)
      Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 470-473

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

    • Author(s)
      Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters

      Volume: 94 Pages: 2420108-2420108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009

    • Author(s)
      Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 470-473

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process2009

    • Author(s)
      Fujii K, Lee S, Ha JS, Lee HJ, Lee HJ, Lee SH, Kato T, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters 94

      Pages: 242108-242108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template2009

    • Author(s)
      Lee SW, Ha JS, Lee HJ, Lee HJ, Goto H, Hanada T, Goto T, Fujii K, Cho MW, Yao T
    • Journal Title

      Applied Physics Letters

      Volume: 94 Pages: 82105-82105

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009

    • Author(s)
      Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
    • Journal Title

      Applied Surface Science 255

      Pages: 8582-8586

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Journal Article] ZnO its Most Up-to-date Technology and Application, Perspectives2007

    • Author(s)
      Takafumi Yao
    • Journal Title

      CMC Publishing Co., Ltd

      Pages: 440-440

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers.2006

    • Author(s)
      D.C.Oh, T.Suzuki, H.Makino, T.Hanada, H.J.Ko, T.Yao
    • Journal Title

      physica status solid 3(4)

      Pages: 946-951

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Selective Growth of Vertically-Aligned ZnO Nano-Needles.2006

    • Author(s)
      SH Lee, WH Lee, SW Lee, H Goto, T Baba, MW Cho, T Yao, HJ Lee, T Yasukawa, T Matsue, H Ko
    • Journal Title

      Journal of Nanoscience and Nanotechnology 6

      Pages: 3351-3354

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical properties of ZnO/GaN heterostructures and Photoresponsivity of ZnO layers.2006

    • Author(s)
      D.C.Oh, T.Suzuki, H.Makino, T.Hanada, H.J.Ko, T.Yao
    • Journal Title

      physica status solid 3(4)

      Pages: 946-951

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Strain eoeects in ZnO layers deposited on 6H-SiC2006

    • Author(s)
      Ashrao ABMA, Segawa Y, Shin K, Yao T
    • Journal Title

      JOURNAL OF APPLIED PHYSICS 100(6)

      Pages: 63523-63523

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Surfactant-mediated molecular beam epitaxy of ZnO.2006

    • Author(s)
      Suzuki H, Minegishi T, Fujimoto G, Cho MW, Yao T
    • Journal Title

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49(3)

      Pages: 1266-1270

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/C-sapphire2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H.Suzuki, T.Hanada, MW.Cho, T.Yao, A.Setiawan
    • Journal Title

      JOURNAL OF APPLIED PHYSICS 98(5)

      Pages: 54911-54911

    • NAID

      120001182191

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Capacitance-voltage Characteristics of ZnO/GaN2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, T.Yao
    • Journal Title

      APPLIED PHYSICS LETTERS 87(16)

      Pages: 162104-162104

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Nucleation and interface chemistry of ZnO deposited on 6H-SiC2005

    • Author(s)
      ABMA.Ashrafi, Y.Segawa, K.Shin, T.Yao
    • Journal Title

      PHYSICAL REVIEW B 72(15)

      Pages: 155302-155302

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Issues in ZnO homoepitaxy2005

    • Author(s)
      MW Cho, C.Harada, H.Suzuki, T.Minegishi, T.Yao, H.Ko, K.
    • Journal Title

      Superlattices and Microstructures 38(4-6)

      Pages: 349-363

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] The effect of surface treatment on Zinc Oxide2005

    • Author(s)
      H.Suzuki, T.Minegishi, Z.Vashaei, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 385-388

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structure properties and phase evolution of MgxZn1-x0 layers grown on c-sapphire by P-MBE2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H, Suzuki, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 415-418

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Nucleation and growth modes of ZnO deposited on 6H-SiC substrates2005

    • Author(s)
      ABMA.Ashrafi, Y.Segawa, K.Shin, J.Yoo, T.Yao
    • Journal Title

      APPLIED SURFACE SCIENCE 249(1-4)

      Pages: 139-144

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Selective growth of Zn-and O-polar ZnO layers by plasma-assisted molecular beam epitaxy2005

    • Author(s)
      T.Minegishi, J.Yoo, H.Suzuki, Z.Vashaei, K.Inaba, K.Shim, T.Yao
    • Journal Title

      JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)

      Pages: 1286-1290

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Issues in ZnO homoepitaxy2005

    • Author(s)
      MW Cho, C.Harada, H.Suzuki, T.Minegishi, T.Yao, H.Ko, K.Maeda, I.Nikura
    • Journal Title

      Superlattices and Microstructures 38(4-6)

      Pages: 349-363

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Control of crystal polarity of ZnO and GaN epitaxial layers by interfacial engineering2005

    • Author(s)
      KW.Jang, T.Minegishi, T.Suzuki, SK/Hong, DC.Oh, T.Hanada, MW.Cho, T.Yao
    • Journal Title

      JOURNAL OF CERAMIC PRGCESSING RESEARCH 6(2)

      Pages: 167-183

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, N.Makino, T.Hanada, MW.Cho, T.Yao
    • Journal Title

      APPLIED PHYSICS LETTERS 86(3)

      Pages: 329090-329090

    • NAID

      120001182186

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.So
    • Journal Title

      JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)

      Pages: 1281-1285

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] ZnO epitaxial layers grown on APO c-sapphire substrate with MgO buiter by plasma-assisted molecular beam epitaxy(p-MBE)2005

    • Author(s)
      MW.Cho, A.Setiawan, HJ.Ko, SK.Hong, T.Yao
    • Journal Title

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20(4)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Structure properties and phase evolution of MgxZn1-xO layers grown on c-sapphire by P-MBE2005

    • Author(s)
      Z.Vashaei, T.Minegishi, H, Suzuki, MW.Cho, T.Yao
    • Journal Title

      COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS INSTITUTE OF PHYSICS CONFERENCE SERIES 184

      Pages: 415-418

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] ZnO epitaxial layers grown on APO c-sapphire substrate with MgO buiter by plasma-assisted molecular beam epitaxy(P-MBE)2005

    • Author(s)
      MW.Cho, A.Setiawan, HJ.Ko, SK.Hong, T.Yao
    • Journal Title

      SEMICUNDUCTOR SCIENCE AND TECHNOLOGY 20(4)

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Capacitance-voltage Characteristics of ZnO/GaN2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, T.Yao, HJ.KO
    • Journal Title

      APPLIED PHYSICS LETTERS 87(16)

      Pages: 162104-162104

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
    • Journal Title

      APPLIED PHYSICS LETTERS 86(4)

      Pages: 42110-42110

    • NAID

      120001182187

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy2005

    • Author(s)
      DC.Oh, T.Suzuki, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, JS.Song, HJ.Ko
    • Journal Title

      JOURNAL OF VACUUM SCIENCE&TECHNOLOGY B23(3)

      Pages: 1281-1285

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Characteristics of Schottky contacts to ZnO : N layers grown by molecular- beam epitaxy2005

    • Author(s)
      DC.Oh, JJ.Kim, H.Makino, T.Hanada, MW.Cho, T.Yao, HJ.Ko
    • Journal Title

      APPLIED PHYSICS LETTERS 86(4)

      Pages: 42110-42110

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article] Nucleation and interface chemistry of ZnO deposited on 6H-SiC2005

    • Author(s)
      ABMA.Ashrafi, Y.Segawa, K.Shin, T.Yao
    • Journal Title

      PHYSICAL REVIEW B72(15)

      Pages: 155302-155302

    • Data Source
      KAKENHI-PROJECT-17360001
  • [Journal Article]2000

    • Author(s)
      T.Yao, S.K.Hong
    • Journal Title

      Oxide and Nitride Semiconductors(Springer)

      Pages: 1-517

    • Data Source
      KAKENHI-PROJECT-21360001
  • [Patent] ZnO系化合物半導体結晶の製造方法、及び、ZnO系化合物半導体基板2005

    • Inventor(s)
      八百隆文, 〓明煥
    • Industrial Property Rights Holder
      スタンレー電気(株)
    • Industrial Property Number
      2005-243472
    • Filing Date
      2005-08-24
    • Acquisition Date
      2007-03-08
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360001
  • [Presentation] HVPE growth of high-quality self-standing GaN thick layers by HVPE2012

    • Author(s)
      T. Sato, S. Okano, T. Goto, T. Yao, R. Seto, A. Sato and H. Goto
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌、日本
    • Data Source
      KAKENHI-PROJECT-24656198
  • [Presentation] HVPE growth of self-standing thick GaN layers with novel pit-induced buffer layers2012

    • Author(s)
      T. Sato, S. Okano, T. Goto, T. Yao, A. Sato and H. Goto
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN4)
    • Place of Presentation
      St Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24656198
  • [Presentation] HVPE growth of free-standing high-quality GaN wafers using novel buffer layers for the applications to high-brightness LEDs2012

    • Author(s)
      H. Goto, R. Seto, A. Sato, T. Sato, S. Okano, T. Goto and T. Yao
    • Organizer
      The 1st International Symposium on Single Crystals and Wafers for LEDs
    • Place of Presentation
      Wonju, Korea
    • Invited
    • Data Source
      KAKENHI-PROJECT-24656198
  • [Presentation] Growth of free-standing GaN substrates (Invited)2010

    • Author(s)
      HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K. Fujii, and T. Yao
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      The Moscone Center, San Francisco, USA
    • Year and Date
      2010-01-25
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Presentation] Photo-electro-chemical properties of GaN2010

    • Author(s)
      Fujii, K., Goto, T., Yao, T.
    • Organizer
      International Workshop on Nitride Semiconductor 2010
    • Place of Presentation
      Tampa、Florida、USA.
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Presentation] Growth of free-standing GaN substrates(Invited)2010

    • Author(s)
      HJ Lee, SW Lee, JS Ha, C Kim, JH Chang, K Fujii, T Yao
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      The Moscone Center, San Francisco, USA
    • Year and Date
      2010-01-25
    • Data Source
      KAKENHI-PROJECT-21360001
  • [Presentation] Photo-electro-chemical properties of GaN2010

    • Author(s)
      Fujii, K, Goto, T, Yao, T
    • Organizer
      International Workshop on Nitride Semiconductor 2010
    • Place of Presentation
      Tampa、Florida、USA
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PROJECT-21360001
  • 1.  ZHU Zigiung (10243601)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  HANADA Takashi (80211481)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 13 results
  • 3.  YOSHIMURA Masamichi (40220743)
    # of Collaborated Projects: 3 results
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  • 4.  MAKINO Hisao (40302210)
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  • 8.  KUKIMOTO Hiroshi (50013488)
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  • 9.  TAKEDA Yoshikazu (20111932)
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  • 11.  SHIRAKI Yasuhiro (00206286)
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  • 18.  GOTO Takenari (10004342)
    # of Collaborated Projects: 1 results
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  • 19.  FUJII Katsushi (80444016)
    # of Collaborated Projects: 1 results
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  • 20.  LEE Hyunjae (10584063)
    # of Collaborated Projects: 1 results
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  • 21.  NISHIKAWA Osamu (10108235)
    # of Collaborated Projects: 1 results
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  • 22.  ASAHI Hajime (90192947)
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  • 23.  MORIKAWA Hiroshi (90024314)
    # of Collaborated Projects: 1 results
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  • 24.  OSHIMA Chuuhei (10212333)
    # of Collaborated Projects: 1 results
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  • 25.  YAMAMOTO Masahiko (30029160)
    # of Collaborated Projects: 1 results
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    # of Collaborated Projects: 1 results
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    # of Collaborated Projects: 1 results
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  • 28.  FUJIKURA Hajime (70271640)
    # of Collaborated Projects: 1 results
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    # of Collaborated Projects: 1 results
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  • 37.  塚田 捷 (90011650)
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    # of Collaborated Projects: 1 results
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  • 41.  庭野 道夫 (20134075)
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  • 42.  河合 良信 (10038565)
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  • 43.  真壁 利明 (60095651)
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  • 44.  張 志豪 (60333879)
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  • 45.  岡田 修司 (30250848)
    # of Collaborated Projects: 1 results
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  • 46.  小池 佳代 (80532423)
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  • 47.  佐藤 忠重 (20611776)
    # of Collaborated Projects: 1 results
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  • 48.  岡野 真也 (60628270)
    # of Collaborated Projects: 1 results
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  • 49.  粕谷 厚生 (10005986)
    # of Collaborated Projects: 1 results
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  • 50.  橋詰 保 (80149898)
    # of Collaborated Projects: 1 results
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  • 51.  福井 孝志 (30240641)
    # of Collaborated Projects: 1 results
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  • 52.  王 杰 (60281987)
    # of Collaborated Projects: 1 results
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  • 53.  HAYASHI Tsukasa
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 54.  グラビア ローレント
    # of Collaborated Projects: 1 results
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  • 55.  クルツ エリザベス
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 56.  CHO Meoung-Whan
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 16 results

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