HASEGAWA Hideki 長谷川英機

… Alternative Names

Researcher Number	60001781
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2005 – 2008: 北海道大学, 名誉教授 2004: 北海道大学, 大学院・情報科学研究科, 教授 1999 – 2003: Hokkaido Univ., Grad. School of Eng., Pro., 大学院・工学研究科, 教授 1997 – 1998: Hokkaido Univ., Grad.School of Electron.and Infor.Eng., Pro., 工学研究科, 教授 1997: 北海道大学, 大学院・工学研究科, 教授 … More
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 表面界面物性 / 電子材料工学 / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering Except Principal Investigator 電子材料工学 / Electronic materials/Electric materials / Applied materials / 表面界面物性 / 電子デバイス・機器工学 / 極微細構造工学
Keywords	Principal Investigator 化合物半導体 / フェルミ準位ピンニング / 単電子デバイス / 集積回路 / 界面制御 / ナノ構造 / 量子デバイス / 界面準位 / Fermi level pinning / トンネル障壁 … More Except Principal Investigator 化合物半導体 / MBE / 電気化学プロセス / ヘテロ接合 / ショットキー障壁 / インジウムリン / GaAs / 金属ー半導体界面 / 界面反応 / ショットキー接合 / 半導体界面 / フェルミ準位ピンニング / 単電子トランジスタ / Schottky barrier / 積層構造 / ショットキ-障壁 / シリコン / 電子波デバイス / 量子干渉効果 / 電子波エレクトロニクス / 超格子 / 超微細加工 / レヤバイレヤ加工 / 溶液 / パルス法 / MIS構造 / MMIC / Compound semiconductor / MIS structure / InAs / InMnAs / 半導体 / 結晶成長 / 量子ドット / Semiconductor / InGaAs / MOCVD / indium phosphide / electrochemical process / HEMT / MOVPE / 電子状態 / 構造安定性 / 積層薄膜構造 / メゾンスコピック現象 / メゾスコピック現象 / 単量子効果 / 原子スケール制御 / 表面処理 / 自然酸化膜 / ナノショットキー / 有機金属気相成長 / 選択成長 / 量子ナノ構造 / 2分岐決定ダイアグラム / カゴメ格子 / フォトニック結晶 / 相補型単電子インバータ / 単電子メモリー / 近藤効果 / 固体進行波相互作用 / マイクロ波増幅 / インタディジタル遅波線路 / ヘリックス型遅波線路 / 遅波線路 / Solid state traveling wave interaction / Microwave amplification / Interdigital slow wave circuits / Helix type slow wave circuits / 希薄磁性半導体 / IIIーV族 / 異常ホ-ル効果 / 分子線エピタキシ / 半磁性半導体 / 磁気抵抗効果 / Diluted Magnetic Semiconductors / III-V Compounds / Compound Semiconductors / Anomalous Hall Effect / Cryxtal growth / Quantum dot / 固体進行波素子 / InP / 界面準位 / ヘテロ界面 / 磁性薄膜 / solid state TWA / Inp / Interface State / クーロン・ブロッケード / ナノ・パワー・エレクトロニクス / 超高速エレクトロニクス / 単電子エレクトロニクス / トンネル現象 / シングル・エレクトロニクス / 有機金属気相成長法 / Crystal Growth / Quantum Dots / 電界効果トランジスタ / 光電子集積回路 / マイクロ波デバイス / 光通信システム / FET / optoelectronic ICs / micro-wave devices / optical communication system / 量子構造 / 2次元電子ガス / インプレーンゲート / スプリットゲート / 量子細線トランジスタ / ショットキーゲート / ショットキーゲット / quantum structure / 2DEG / in-plane gate / split gate / quantum wire transistor / single electron transistor / Schottky gate / 界面制御 / シリコン超薄膜制御層 / interface control / ultrathin Si control layer / 超格子構造 / マイクロ波素子 / 進行波増幅 / プラズマCVD / Superlattice / Microwave device / Traveling-wave amplification Less

化合物半導体MIS界面準位に関するピンニング・スポット面内分布モデルPrincipal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Hokkaido University
電界移動型量子ドットを用いた室温動作高速・超低消費電力単電子スイッチ素子の研究Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire NetworksPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido University
半導体2次元電子ガスのプラズマ波によるミリ波・テラヘルツ進行波デバイスの研究Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Hokkaido University
Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky GatesPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limitPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its ApplicationPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power DevicesPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hokkaido University
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"Principal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
単電子デバイスとその高密度集積化Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  1996 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
"Control of surface and interfaces of nano-structures for single electron devices"Principal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  HOKKAIDO UNIVERSITY
Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High VacuumPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
単電子ナノエレクトロニクスの基礎Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devicesPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  HOKKAIDO UNIVERSITY
Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  HOKKAIDO UNIVERSITY
単電子エレクロニクスの基礎Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
Fabrication and Characterization of Self-organized Quantum Nano-structures.
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
単量子物性のための単原子制御
- Principal Investigator
  
  金原粲
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  The University of Tokyo
クーロン・ブロッケードを利用したナノパワー超高速エレクトロニクスの研究
- Principal Investigator
  
  菅野卓雄
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for Co-operative Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyo University
Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.Principal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
電子波デバイスのための極限構造の制御と評価
- Principal Investigator
  
  蒲生健次
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
原子スケール利御薄膜・表面
- Principal Investigator
  
  金原粲
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode
- Principal Investigator
  
  AKAZAWA Masamichi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
金属ー半道体積層界面の基礎
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
電子波デバイスのための極限構造の制御と評価
- Principal Investigator
  
  蒲生健次
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their SurfacesPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University, (Faculty of Engineering)
A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for ImagingPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University, (Faculty of Engineering)
金属ー半導体積層界面の基礎
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors
- Principal Investigator
  
  OHNO Hideo
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
金属ー半導体積層界面の基礎
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
Solid-state traveling wave amplifier type device formed by semiconductors and helix type slow wave circuits
- Principal Investigator
  
  IIZUKA Kouichi
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor CarriersPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
積層構造(金属-半導体,絶縁体-半導体)の総合的研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1986
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Osaka University
化合物半導体-絶縁体界面の物性と応用に関する研究Principal Investigator
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  1985 – 1987
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Research Institution
  Hokkaido University
Feasibility Study of Traveling Wave Devices Using Compound Semiconductor Superlattice Structures
- Principal Investigator
  
  FUKAI Ichiro
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University

All 2009 2008 2007 2006 2005

All Journal Article Presentation Book

[Book] "Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks" in Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt)2007
- Author(s)
  H. Hasegawa, T. Sato, S. Kasai
- Publisher
  Springer-Verlag (Berlin, Heidelberg)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Distributed Pinning Spot Model for Highk Insulator - III-V Semiconductor Interfaces2009
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol. 7
  
  Pages: 122-128
- NAID
  130004439129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Korean Physical Society 54(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009
- Author(s)
  M. Akazawa and H. Hasegawa
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 7
  
  Pages: 122-128
- NAID
  130004439129
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] 化合物半導体電子デバイスおよび関連材料研究の歴史的発展と将来展望(招待論文)2009
- Author(s)
  長谷川英機
- Journal Title
  
  電子情報通信学会和文論文誌C (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 7
  
  Pages: 122-128
- NAID
  130004439129
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009
- Author(s)
  H. Hasegawa and M. Akazawa
- Journal Title
  
  J. Korean Physical Society 54(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] Histrical Evolution and Future Prospects of Research on Compound Semiconductor Electron Devices and Related Materials (invited)2009
- Author(s)
  H. Hasegawa
- Journal Title
  
  IEICE Trans. Electron. Vol. J92-C (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] 化合物半導体電子デバイスおよび関連材料研究の歴史的発展と将来展望2009
- Author(s)
  長谷川英機
- Journal Title
  
  電子情報通信学会和文論文誌C (招待論文)(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-Ill Nitride Schottky Barriers (invited)2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Korean Physical Society vol. 54 (in press)
  
  Pages: 10-10
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on A1GaN /GaN Heterostructures2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1542-1550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング(招待論文)2008
- Author(s)
  長谷川英機
- Journal Title
  
  表面科学 29
  
  Pages: 76-83
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces (invited)2008
- Author(s)
  H. Hasegawa
- Journal Title
  
  Hyomen Kagaku Vol. 29, No. 2
  
  Pages: 76-83
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science 255
  
  Pages: 628-632
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. c 5
  
  Pages: 1959-1961
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Journal Title
  
  Proceeding of International Conference on Indium Phosphide and related Materials 20
  
  Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] PERFORMANCE COMPAEISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  Proceedings of International Conference on Indium Phosphide and Related Materials 20
  
  Pages: 1-4
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science Vol. 255, No. 3
  
  Pages: 628-632
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Laver2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 2729-2732
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 8005-8015
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Interface Models and Processing Technologies for Surface Passivation andInterface Control in III-V Semiconductor Nanoelectronics2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Journal Title
  
  Applied Surface Science 254(invited)
  
  Pages: 8005-8015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) Vol. 5, No. 6
  
  Pages: 1959-1961
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 3653-3666
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Surface passivation technology for III V semiconductor nanoelectronics2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Journal Title
  
  Applied Surface Science 255(invited)
  
  Pages: 628-632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Vac. Sci. Technol. B Vol. 26, No. 4
  
  Pages: 1542-1550
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  accepted for publication in Proceeding of 20th International Conference on Indium Phosphide and related Materials
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Laver2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1569-1578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング2008
- Author(s)
  長谷川英機
- Journal Title
  
  表面科学 29
  
  Pages: 76-83
- NAID
  10021165401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B Vol. 26, No. 4
  
  Pages: 1569-1578
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  accepted for publication in phys. stat. sol. c 5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1959-1961
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Siuface Science 254
  
  Pages: 3653-3666
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science Vol. 254, No. 24
  
  Pages: 8005-8015
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] GaAs High-k Dielectric Metal-Insulator- Semiconductor Structixre Having Silicon Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 2729-2732
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science Vol. 254
  
  Pages: 3653-3666
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  Applied Surface Science (in press ; available online) 254
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/A1GaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Getterinn2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1959-1961
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20656006
[Journal Article] Surface passivation technology for III-V semiconductor nanoelectronics2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  accepted for publication in Applied Surface Science 254
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1569-1578
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) Vol. 5, No. 9
  
  Pages: 2729-2732
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1542-1550
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007
- Author(s)
  M. Akazawa, H. Hasegawa, R. Jia
- Journal Title
  
  physica status solidi (a) 204
  
  Pages: 1034-1040
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/ GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007
- Author(s)
  H. Hasegawa
- Journal Title
  
  Current Appl. Phys. Vol. 7
  
  Pages: 318-327
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2007
- Author(s)
  H.Hasegawa, M.Akazawa
- Journal Title
  
  Applied Surface Science (in press)(accepted for publication)
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Formation of Ultrathin SiNx/ Si Interface Control Double Layer on (001) and (Hi) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B Vol. 25, No. 4
  
  Pages: 1481-1490
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks2007
- Author(s)
  H. Hasegawa, T. Sato, S. Kasai
- Journal Title
  
  Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt), Springer-Verlag, Berlin, Heidelberg Part II.6.2
  
  Pages: 639-664
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 4
  
  Pages: 2629-2633
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Formation of Ultrathin SiN_x/ Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B 25
  
  Pages: 1481-1490
- NAID
  120000955805
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007
- Author(s)
  H. Hasegawa
- Journal Title
  
  Current Appl. Phys. 7
  
  Pages: 318-327
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices2007
- Author(s)
  M.Akazawa, H.Hasegawa
- Journal Title
  
  Journal of Crystal Growth Vol.301-302
  
  Pages: 951-954
- NAID
  120000965574
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (lll)B substrates2007
- Author(s)
  Isao Tamai, Hideki Hasegawa
- Journal Title
  
  Journal of Crystal Growth Vol. 301-302
  
  Pages: 857-861
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) 4
  
  Pages: 2629-2633
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B 25
  
  Pages: 1481-1490
- NAID
  120000955805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures (invited)2007
- Author(s)
  H.Hasegawa
- Journal Title
  
  Current Applied Physics Vol.7
  
  Pages: 318-327
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  phys. stat. sol. (c) Vol. 4, No. 7
  
  Pages: 2629-2633
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111) B sxirfaces for passivation of GaAs quantum wire devices2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 951-954
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Recent Progress and Surface-Related Key Issues in III-V Semiconductor Nanoelectronics(invited)2007
- Author(s)
  H.Hasegawa
- Journal Title
  
  Journal of Korean Physical Society Vol.50, No.3
  
  Pages: 9-9
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Recent Progress and Surface-Related Key Issues in III-V Semiconductor Nanoelectronics (invited)2007
- Author(s)
  H.Hasegawa
- Journal Title
  
  Journal of Korean Physical Society Vol.50, No.3
  
  Pages: 9-9
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007
- Author(s)
  M. Akazawa, H. Hasegawa, R. Jia
- Journal Title
  
  physica status solidi (a) Vol. 204, No. 4
  
  Pages: 1034-1040
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007
- Author(s)
  M.Akazawa, H.Hasegawa
- Journal Title
  
  physica status solidi (a) Vol.204, No.4
  
  Pages: 1034-1040
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007
- Author(s)
  H.Hasegawa, M.Akazawa
- Journal Title
  
  J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)
- NAID
  120000955872
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111) B substrates2007
- Author(s)
  I. Tamai, H. Hasegawa
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 857-861
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007
- Author(s)
  M.Akazawa, H.Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)
- NAID
  120000955805
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007
- Author(s)
  M.Akazawa, H.Hasegawa
- Journal Title
  
  physica status solidi (c) (in press)(accepted for publication)
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Vac. Sci. Technol. B 25
  
  Pages: 1495-1503
- NAID
  120000955872
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substrates2007
- Author(s)
  I.Tamai, H.Hasegawa
- Journal Title
  
  Journal of Crystal Growth Vol.301-302
  
  Pages: 857-861
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (lll)B surfaces for passivation of GaAs quantum wire devices2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Journal Title
  
  Journal of Crystal Growth Vol. 301-302
  
  Pages: 951-954
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Minority carrier diffusion lengths in MOVPE-grown n-and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007
- Author(s)
  K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 787-790
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007
- Author(s)
  K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
- Journal Title
  
  J. Cryst. Growth Vol. 298
  
  Pages: 787-790
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN /GaN Schottky Diodes Subjected to Oxygen Gettering2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Journal Title
  
  J. Vac. Sci. Technol. B Vol. 25, No. 4
  
  Pages: 1495-1503
- NAID
  120000955872
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devipps2006
- Author(s)
  N. Shiozaki, T. Sato, M. Akazawam, H. Hasegawa
- Journal Title
  
  Journal de Physique IV Vol. 132
  
  Pages: 249-253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits2006
- Author(s)
  T.Tamura, I.Tamai, S.Kasai, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45, No.4
  
  Pages: 3614-3620
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Dynamics and Control of Recombination Process at Semiconductor Surfaces, Interfaces and Nanostructure (invited)2006
- Author(s)
  H.Hasegawa, T.Sato, S.Kasai, B.Adamowicz, T.Hashizume
- Journal Title
  
  Solar Energy Vol.80, No.6
  
  Pages: 629-644
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006
- Author(s)
  R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
- Journal Title
  
  Journal of Vacuum Science & Technology B Vol. 24, No. 4
  
  Pages: 2060-2068
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process2006
- Author(s)
  T.Kimura, H.Hasegawa, T.Sato, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys Vol.45, No.4B
  
  Pages: 3414-3422
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006
- Author(s)
  T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
- Journal Title
  
  Jpn. J. of Appl. Phys. 45
  
  Pages: 3414-3422
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006
- Author(s)
  T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
- Journal Title
  
  Jpn. J. of Appl. Phys. Vol. 45, No. 4B
  
  Pages: 3414-3422
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Liquid Phase Sensors Using Open-Gate AlGaN/GaN HEMT Structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B Vol.24, No.4
  
  Pages: 1972-1976
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B Vol. 24, No. 4
  
  Pages: 2148-2155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Growth Simulation and Actual MBE Growth of Triangular GaAs Nanowires on Patterned(111)B Substrates2006
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 19-24
- NAID
  130004933903
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Future of heterostructure microelectronics and roles of materials research for its progress (invited)2006
- Author(s)
  H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
- Journal Title
  
  IEICE Trans. Electron. Vol. E89-C, No. 7
  
  Pages: 874-882
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Electrochemicai Formation of Chaotic and Regular Nanostractures on (001) and (111)B InP Substrates and Their Photpluminescence Characterizations2006
- Author(s)
  T.Fujino, T.Kimura, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 184-191
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices2006
- Author(s)
  N. Shiozaki, T. Sato, M. Akazawa, H. Hasegawa
- Journal Title
  
  Journal de Physique IV 132
  
  Pages: 249-253
- NAID
  120000953027
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress (invited)2006
- Author(s)
  H.Hasegawa, S.Kasai, T.Sato, H.Hashizume
- Journal Title
  
  IEICE TRANS. ELECTRON Vol.89, No.7
  
  Pages: 874-882
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B Vol. 24, No. 4
  
  Pages: 2087-2092
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Selective molecular beam epitaxy growth of size-and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B 24
  
  Pages: 2087-2092
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates2006
- Author(s)
  S.Kasai, J.Kotani, T.Hashizume, H.Hasegawa
- Journal Title
  
  Journal of Electronic Materials Vol.35, No.4
  
  Pages: 568-575
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Future of heterostmcture microelectronics and roles of materials research for its progress (invited)2006
- Author(s)
  H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
- Journal Title
  
  IEICE Trans. Electron. E89-C
  
  Pages: 874-882
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces2006
- Author(s)
  M. Akazawa, N. Shiozaki, H. Hasegawa
- Journal Title
  
  Journal de Physique IV 132
  
  Pages: 95-99
- NAID
  120000958460
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Suppression of Device Interference Effects in GaAs Nanodevices by Surface Passivation using Si Interface Control Layer2006
- Author(s)
  R.Jia, N.Shiozaki, S.Kasai, H.Hasegawa
- Journal Title
  
  J. Vac. Sci. Technol. B Vol.24, No.4
  
  Pages: 2060-2068
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006
- Author(s)
  R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
- Journal Title
  
  J. Vac. Sci. & Technol. B 24
  
  Pages: 2060-2068
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006
- Author(s)
  T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B 24
  
  Pages: 1972-1976
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Selective MBE Growth of Size- and Position-Controlled GaN/AlGaN Nanowires on Non-planar (0001) Substrates and Its Growth Mechanism2006
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B Vol.24, No.4
  
  Pages: 2087-2092
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Liquid-phase sensors using open-gate AlGaN/ GaN high electron mobility transistor structure2006
- Author(s)
  T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B Vol. 24, No. 4
  
  Pages: 1972-1976
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006
- Author(s)
  S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
- Journal Title
  
  Journal of Electronic Materials Vol. 35, No. 4
  
  Pages: 568-575
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006
- Author(s)
  J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
- Journal Title
  
  J. Vac. Sci. & Technol. B 24
  
  Pages: 2148-2155
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuit for Ubiquitous Network Era (invited)2006
- Author(s)
  H.Hasegawa, S.Kasai, T.Sato
- Journal Title
  
  International Journal of High Speed Electronics and Systems Vol.16, No.2
  
  Pages: 421-436
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Gate control, surface leakage currents. and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006
- Author(s)
  S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
- Journal Title
  
  Journal of Electronic Materials 35
  
  Pages: 568-575
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Self-assembled formation of InP nanopore arrays by photoelectrochemical anodization in HCl based electrolyte2006
- Author(s)
  T.Sato, T.Fujino, H.Hasegawa
- Journal Title
  
  Applied Surface Science Vol.252, No.15
  
  Pages: 5457-5461
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (ill) B Surfaces2006
- Author(s)
  M. Akazawa, N. Shiozaki, H. Hasegawa
- Journal Title
  
  Journal de Physique IV Vol. 132
  
  Pages: 95-99
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Large Reduction of Leakage Currents in AlGaN Schottky Interfaces by a Novel Surface Control Process and Its Mechanism2006
- Author(s)
  J.Kotani, M.Kaneko, S.Kasai, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B Vol.24, No.4
  
  Pages: 2148-2155
- Data Source
  KAKENHI-PROJECT-18360002
[Journal Article] Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits2006
- Author(s)
  T.Nakamura, Y.Abe, S.Kasai, H.Hasegawa, T.Hashizume
- Journal Title
  
  Journal of Physics E Vol.38, No.1
  
  Pages: 104-107
- Data Source
  KAKENHI-PROJECT-18656089
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN (0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 84-87
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation2005
- Author(s)
  N.Shiozaki, S.Anantathanasarn, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 71-74
- NAID
  120000955195
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Cross-sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates2005
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2652-2656
- NAID
  10022540457
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures2005
- Author(s)
  H.Hasegawa, T.Sato
- Journal Title
  
  ELECTROCHIMICA ACTA 50(15)
  
  Pages: 3015-3027
- NAID
  120000964124
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy2005
- Author(s)
  N.Shiozaki, T.Sato, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1714-1721
- NAID
  120000961770
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Speed-power performances of quantum wire switches controlled by nanometer-scale schottky wrap gates for GaAs based hexagonal BDD quantum2005
- Author(s)
  Yumoto, M, Kasai, S, Hasegawa, H
- Journal Title
  
  INSTITUTE OF PHYSICS CONFERENCE SERIES Vol.184
  
  Pages: 213-216
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure2005
- Author(s)
  Matsuo, K, Negoro, N, Kotani, J, Hashizume, T, Hasegawa, H
- Journal Title
  
  APPLIED SURFACE SCIENCE 244(1-4)
  
  Pages: 273-276
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Anomalous current leakage and depletion width control in nanometer scale Schottky gates formed on AlGaAs/GaAs surface2005
- Author(s)
  Jia, R, Kasai, S, Hasegawa, H
- Journal Title
  
  INSTITUTE OF PHYSICS CONFERENCE SERIES Vol.184
  
  Pages: 21-26
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors2005
- Author(s)
  Kotani, J, Kasai, S, Hashizume, T, Hasegawa, H
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1799-1807
- NAID
  120000958033
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Removal of Side-gating Effects in GaAs Quantum Nanodevices with Nano-Schottky Gates by Surface Passivation Using Si Interface Control Layer2005
- Author(s)
  R.Jia, N.Shiozaki, S.Kasai, H.Hasegawa
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.3
- NAID
  130004933884
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Hydrogen Response of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure2005
- Author(s)
  K.Matsuo, T.Kimura, H.Hasegawa T.Hashizume1)
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.3
  
  Pages: 314-318
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted MBE on Pre-Patterned Substrates2005
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2487-2491
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates2005
- Author(s)
  T.Sato, I.Tamai, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1706-1713
- NAID
  120000958805
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions2005
- Author(s)
  Hashim, AM, Kasai, S, Hashizume, T, Hasegawa, H
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS Vol.44(4B)
  
  Pages: 2729-2734
- NAID
  10015705451
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation2005
- Author(s)
  J.Kotani, S.Kasai, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.3
  
  Pages: 433-438
- NAID
  130004438970
- Data Source
  KAKENHI-PROJECT-17656099
[Presentation] Capacitance-Voltage and Photoluminescence Study of High-k /III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009
- Author(s)
  Masamichi Akazawa, Marcin Miczek, Boguslawa Adamowicz, Hideki Hasegawa
- Organizer
  36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
- Place of Presentation
  Santa Barbara, California, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate A anN taaN Heterostructure Transistors2009
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  36th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  Santa Barbara, California, USA
- Year and Date
  2009-01-12
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN /GaN Heterostructure Transistors2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
- Place of Presentation
  Santa Barbara, California, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The Symposium on Surface and Nano Science 2009 (SSNS'09)
- Place of Presentation
  Shizukuishi, Iwate, Japan, January
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN/GaN Heterostructure Transistors2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  36th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  Santa Barbara, California, USA
- Year and Date
  2009-01-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  The Symposium on Surface and Nano Science 2009
- Place of Presentation
  Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
- Year and Date
  2009-01-27
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The Symposium on Surface and Nano Science 2009
- Place of Presentation
  Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
- Year and Date
  2009-01-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Capacitance-Voltage and Photoluminescence Study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Laver2009
- Author(s)
  M. Akazawa, M. Miczek, B. Adamowicz and H. Hasegawa
- Organizer
  36th Conference on the Physics & Chemistry of Semicoinductor Interfaces
- Place of Presentation
  Santa Barbara, California, USA
- Year and Date
  2009-01-13
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Capacitance-Voltage and Photoluminescence study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009
- Author(s)
  M. Akazawa, M. Miczek, B. Adamowicz, H. Hasegawa
- Organizer
  36th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  Santa Barbara, California, USA
- Year and Date
  2009-01-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Distributed Pinning Spot Model for High-k Insulator - III-V Semiconductor Interface2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 5th International Symposium on Surface Science and Nanotechnology QSSS-5)
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal- Insulator- Semiconductor Capacitors2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2008 Electronic Material Conference (EMC2008)
- Place of Presentation
  University of California Santa Barbara, California, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  35th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  La Fonda Hotel, Santa Fe, New Mexico, USA
- Year and Date
  2008-01-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2008 Electronic Material Conference
- Place of Presentation
  Univer Sity of California Santa Barbara, Califomia, USA
- Year and Date
  2008-06-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  Symposium on Surface and Nano Science 2008
- Place of Presentation
  Hotel Appi Grand, Appi, Iwate, Japan
- Year and Date
  2008-01-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] III-V半導体ナノェレクトロニクスの新展開(招待講演)2008
- Author(s)
  長谷川英機
- Organizer
  社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
- Place of Presentation
  長野県長野市
- Year and Date
  2008-08-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] PERFORMANCE COMPARISON OF InP AND A1GaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Organizer
  20th International Conference on Indium Phosphide and Related
- Place of Presentation
  Versailles, France
- Year and Date
  2008-05-26
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
- Place of Presentation
  Santa Fe, New Mexico, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The 14th Intemational Symposium on the Physics of Semiconductors and Applications
- Place of Presentation
  Jeju, Korea
- Year and Date
  2008-08-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  35th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  La Fonda Hotel, Santa Fe, New Mexico. USA
- Year and Date
  2008-01-16
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  2008 Electronic Material Conference (EMC2008)
- Place of Presentation
  University of California Santa Barbara, California, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
- Place of Presentation
  Lodz, Poland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Lodz, Poland
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 5th International Symposium on Surface Science and Nanotechnology
- Place of Presentation
  Waseda University, Tokyo, Japan
- Year and Date
  2008-11-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of Group-HI Nitride Surfaces for Power Electronics and Sensor Electronics2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  The 14th International Symposium on the Physics of Semiconductors and Applications
- Place of Presentation
  Jeju, Korea(invited)
- Year and Date
  2008-08-28
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors (invited)2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  Symposium on Surface and Nano Science 2008
- Place of Presentation
  Hotel Appi Grand, Appi, Iwate, Japan
- Year and Date
  2008-01-23
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Organizer
  The 5th International Symposium on Surface Science and Nanotechnology
- Place of Presentation
  Waseda University, Tokyo, Japan
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] AIGaN/GaNプレーナ・ショットキダイオードの低速分散性過渡応答2008
- Author(s)
  長谷川英機, 赤澤正道
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2008-05-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008
- Author(s)
  赤澤正道, 長谷川英機
- Organizer
  社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
- Place of Presentation
  長野県長野市
- Year and Date
  2008-08-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe (WOCSDICE2008)
- Place of Presentation
  Leuven, Belgium
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008
- Author(s)
  赤澤正道、長谷川英機
- Organizer
  社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
- Place of Presentation
  長野県長野市
- Year and Date
  2008-08-17
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  2008 Electronic Material Conference
- Place of Presentation
  UniverSity of Californmia Santa Barbara, Califomia, USA
- Year and Date
  2008-06-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Lodz, Poland(invited)
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs MetaHnsulator-Semiconductor Structures2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
- Place of Presentation
  Lodz, Poland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  20th International Conference on Indium Phosphide and Related Materials (IPRM08)
- Place of Presentation
  Versailles, France
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Lodz, Poland
- Year and Date
  2008-06-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008
- Author(s)
  M. Akazawa and H. Hasegawa
- Organizer
  2008 Electronic Material Conference
- Place of Presentation
  University of California Santa Barbara, California, USA
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2008)
- Place of Presentation
  Jeju, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  35th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  La Fonda Hotel, Santa Fe, New Mexico, USA
- Year and Date
  2008-01-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Lodz, Poland
- Year and Date
  2008-06-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on A1GaN/GaN Wafer2008
- Author(s)
  H. Hasegawa and M. Akazawa
- Organizer
  2008 Electronic Material Conference
- Place of Presentation
  University of California Santa Barbara, California, USA
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] III-V半導体ナノエレクトロニクスの新展開2008
- Author(s)
  長谷川英機
- Organizer
  社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
- Place of Presentation
  長野県長野市(招待講演)
- Year and Date
  2008-08-17
- Data Source
  KAKENHI-PROJECT-20656006
[Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  20th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles, France
- Year and Date
  2008-05-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] シリコン界面制御層を有するGaAs高誘電体MISキャパシタのアドミッタンス2008
- Author(s)
  赤澤正道, 長谷川英機
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
- Place of Presentation
  Santa Fe, New Mexico, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] An Overview on Band Alignment and Fermi Level Pinnine at Semiconductor Interfaces (invited)2007
- Author(s)
  H. Hasegawa
- Organizer
  Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
- Place of Presentation
  Hinsiu, Taiwan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  34th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  Salt Lake City, Utah, USA
- Year and Date
  2007-01-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Silicon Interface Control Laver Based Surface Passivation Method and Related High-k MIS Gate stack for GaAs Nanowire MISFETs2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  International Symposium on Advanced nanodevices and Nanotechnology
- Place of Presentation
  Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
- Year and Date
  2007-12-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  International Symposium on Advanced nanodevices and Nanotechnology
- Place of Presentation
  Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
- Year and Date
  2007-12-03
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 34th International Symposium on Compound Semiconductors (ISCS-34)
- Place of Presentation
  Kyoto, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  5th International Workshop on Semi- conductor Surface Passivation
- Place of Presentation
  Zakopane, Poland
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] An Overview on Band Alignment and Fermi Level Pinning at Semiconductor Interfaces (invited)2007
- Author(s)
  H. Hasegawa
- Organizer
  International Workshop on High-k Dielectrics on High Speed Channel Materials
- Place of Presentation
  Hinsiu, Taiwan
- Year and Date
  2007-05-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hydrogen sensor2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  7th International Conference on Nitride Semiconductor
- Place of Presentation
  MG Grand Hotel, Las Vegas, Nevada, USA
- Year and Date
  2007-09-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 34th International Symposium on Compound Semiconductor
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2007-10-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  Symposium on Surface and Nano Science 2007
- Place of Presentation
  Appi, Iwate, Japan
- Year and Date
  2007-01-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  34th Conference on the Physics & Chemistry of Semiconductor Interfaces
- Place of Presentation
  Salt Lake City, Utah, USA
- Year and Date
  2007-01-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  5th International Workshop on Semiconductor Surface Passivation
- Place of Presentation
  GEOVITA, Zakopane, Poland
- Year and Date
  2007-09-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  7th International Conference on Nitride Semiconductor
- Place of Presentation
  MG Grand Hotel, Las Vegas, Nevada, USA
- Year and Date
  2007-09-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Complete Removal of Fermi Level Pinning at Highk Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2007 Electronic Material Conference (EMC2007)
- Place of Presentation
  University of Notre Dame, South Bend, Indiana, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 2007 International Symposium on Advanced nanodevices and Nanotechnology (ISANN2007)
- Place of Presentation
  Waikoloa, Hawaii, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2007 Electronic Material Conference
- Place of Presentation
  University of Notre Dame, South Bend, Indiana, USA
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007
- Author(s)
  H. Hasegawa
- Organizer
  MBE-Taiwan 2007
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2007-05-21
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007
- Author(s)
  Masamichi Akazawa, Hideki Hasegawa
- Organizer
  34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
- Place of Presentation
  Salt Lake City, Utah, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  2007 Electronic Material Conference (EMC2007)
- Place of Presentation
  University of Notre Dame, South Bend, Indiana, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  International Workshop on High-k Dielectrics on High Speed Channel Materials
- Place of Presentation
  Hinsiu, Taiwan
- Year and Date
  2007-05-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  Symposium on Surface and Nano Science 2007 (SSNS '07)
- Place of Presentation
  Iwate, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces
- Place of Presentation
  Tropical Eco Resort, Manaus-Amazonas, Brazil
- Year and Date
  2007-08-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007
- Author(s)
  H. Hasegawa
- Organizer
  MBE-Taiwan 2007
- Place of Presentation
  Kaohsiung
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2007 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices, "
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2007-02-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
- Place of Presentation
  Hinsiu, Taiwan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111) B Interfaces by a Silicon Interface Control Layer2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  2007 Electronic Material Conference
- Place of Presentation
  University of Notre Dame, South Bend, Indiana, USA
- Year and Date
  2007-06-21
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Si界面制御層によるHfO2/GaAs界面の制御2007
- Author(s)
  赤澤正道, 長谷川英機
- Organizer
  第68回応用物理学学術講演会
- Place of Presentation
  札幌市
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)
- Place of Presentation
  Manaus-Amazonas, Brazil
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Pd/AlGaN/GaNショットキーダイオード形水素センサの大気中動作特性2007
- Author(s)
  赤澤正道, 長谷川英機
- Organizer
  第68回応用物理学学術講演会
- Place of Presentation
  札幌市
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007
- Author(s)
  Hideki Hasegawa, Masamichi Akazawa
- Organizer
  34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
- Place of Presentation
  Salt Lake City, Utah, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hvdroeen sensor2007
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Nevada, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  2007 Electronic Material Conference
- Place of Presentation
  University of Notre Dame, South Bend, Indiana, USA
- Year and Date
  2007-06-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  5th Solid State Surfaces and Interfaces (SSSI2006)
- Place of Presentation
  Smolenice Castle, Slovak Republic
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006
- Author(s)
  J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
- Organizer
  2006 Electronic Materials Conference (EMC2006)
- Place of Presentation
  Pennsylvania, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  Technical Digest of International Workshop on Nitride Semiconductors (IWN2006)
- Place of Presentation
  Kyoto, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  5th Solid State Surfaces and Interfaces
- Place of Presentation
  Smolenice Castle, Slovak Republic
- Year and Date
  2006-11-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Group Ill-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  2nd International Workshop of NANO Systems Institute
- Place of Presentation
  Seoul, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111) B Surfaces for Passivation of GaAs Quantum Wire Devices2006
- Author(s)
  M. Akazawa, H. Hasegawa
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Waseda University, Tokyo, Japan
- Year and Date
  2006-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006
- Author(s)
  J. Kotani, M. Kaneko, H. Hasegawa, T., Hashizume
- Organizer
  Electronic Materials Conference
- Place of Presentation
  Pennsylvania, USA
- Year and Date
  2006-06-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2006)
- Place of Presentation
  Jeju, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
- Place of Presentation
  Perth, Australia
- Year and Date
  2006-12-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006
- Author(s)
  I. Tamai, H. Hasegawa
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Waseda University, Tokyo, Japan
- Year and Date
  2006-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111)B Surfaces for Passivation of GaAs Quantum Wire Devices2006
- Author(s)
  Masamichi Akazawa, Hideki Hasegawa
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006
- Author(s)
  M. Akazawa, H. Hasegawa, R. Jia
- Organizer
  8th Intemational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Cadiz, Spain
- Year and Date
  2006-05-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
- Place of Presentation
  Perth, Australia
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (invited panelist presentation)2006
- Author(s)
  H. Hasegawa
- Organizer
  IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
- Place of Presentation
  Gyeongu, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006
- Author(s)
  H. Hasegawa, KMatsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
- Organizer
  8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
- Place of Presentation
  Cadiz, Spain
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (nvited panelist presentation)2006
- Author(s)
  H. Hasegawa
- Organizer
  IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
- Place of Presentation
  Gyeongju, Korea
- Year and Date
  2006-10-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006
- Author(s)
  M. Akazawa, H. Hasegawa, R. Jia
- Organizer
  8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
- Place of Presentation
  Cadiz, Spain
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  Japan-Germany Joint Workshop, 2006 "Nano-Electronics"
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006
- Author(s)
  H. Hasegawa, M. Akazawa
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2006-10-25
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  The 14th International Symposium on the Physics of Semiconductors and Applications
- Place of Presentation
  Jeju, Korea
- Year and Date
  2006-08-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  Japan-Germany Joint Workshop, 2006"Nano-Electronics"
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-10-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006
- Author(s)
  Isao Tamai, Hideki Hasegawa
- Organizer
  The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
- Place of Presentation
  Tokyo, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Control of Group III-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006
- Author(s)
  H. Hasegawa
- Organizer
  2^<nd> International Workshop of NANO Systems Institute
- Place of Presentation
  Seoul, Korea
- Year and Date
  2006-06-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002
[Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006
- Author(s)
  H. Hasegawa, K. Matsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
- Organizer
  8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Cadiz, Spain
- Year and Date
  2006-05-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360002

1. AKAZAWA Masamichi (30212400)

# of Collaborated Projects: 16 results

# of Collaborated Products: 139 results
2. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 15 results

# of Collaborated Products: 0 results
3. FUHIKURA Hajime (70271640)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
4. KASAI Seiya (30312383)

# of Collaborated Projects: 6 results

# of Collaborated Products: 6 results
5. MOTOHISA Jun-ich (60212263)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. 金原桀 (90010719)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
7. SUGANO Takuo (50010707)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
8. FUKUI Takashi (30240641)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
9. IIZUKA Kouichi (30193147)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
10. OHNO Hideo (00152215)

# of Collaborated Projects: 4 results

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11. WU Nan-jan (00250481)

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13. 川辺光央 (80029446)

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14. FUKAI Ichirou (70001740)

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15. YASUDA Yukio (60126951)

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18. 青柳克信 (70087469)

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19. SAWAKI Nobuhiko (70023330)

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22. 蒲生健次 (70029445)

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23. 権田俊一 (70175347)

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27. 八百隆文 (60230182)

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28. 榊裕之 (90013226)

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30. 兼城千波 (30318993)

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31. SEKI Shouhei

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32. JIANG Chao

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33. SAITOH Toshiya (70241396)

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34. SAWADA Takayuki (40113568)

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35. KOMA Atsushi (00010950)

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36. IWAMI Motohiro (80029123)

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37. IKEBE Masayuki (20374613)

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38. SHIMOZUMA Mitsuo (70041960)

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39. 高柳邦夫 (80016162)

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42. 冷水佐壽 (50201728)

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56. 村山洋一 (40057956)

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57. TSUBOUCHI Natsuro

# of Collaborated Projects: 1 results

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58. SAKAI Takamasa

# of Collaborated Projects: 1 results

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59. UEDA Daisuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HASEGAWA Hideki 長谷川 英機

長谷川 秀機 ハセガワ ヒデキ

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化合物半導体MIS界面準位に関するピンニング・スポット面内分布モデルPrincipal Investigator

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電界移動型量子ドットを用いた室温動作高速・超低消費電力単電子スイッチ素子の研究Principal Investigator

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GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire NetworksPrincipal Investigator

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半導体2次元電子ガスのプラズマ波によるミリ波・テラヘルツ進行波デバイスの研究Principal Investigator

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Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky GatesPrincipal Investigator

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Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limitPrincipal Investigator

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Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its ApplicationPrincipal Investigator

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Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power DevicesPrincipal Investigator

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"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"Principal Investigator

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HASEGAWA Hideki 長谷川英機

長谷川秀機ハセガワヒデキ