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HASEGAWA Hideki  長谷川 英機

ORCIDConnect your ORCID iD *help
… Alternative Names

長谷川 秀機  ハセガワ ヒデキ

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Researcher Number 60001781
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2005 – 2008: 北海道大学, 名誉教授
2004: 北海道大学, 大学院・情報科学研究科, 教授
1999 – 2003: Hokkaido Univ., Grad. School of Eng., Pro., 大学院・工学研究科, 教授
1997 – 1998: Hokkaido Univ., Grad.School of Electron.and Infor.Eng., Pro., 工学研究科, 教授
1997: 北海道大学, 大学院・工学研究科, 教授 … More
1986 – 1996: Faculty of Engineering, Hokkaido University , Prof., 工学部, 教授
1994: 北海道大学工学部, 教授
1993 – 1994: Hokkaido University Faculty of Engineering, Professor, 工学部・電気工学科, 教授
1985: 北海道大学, 工, 教授 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 表面界面物性 / 電子材料工学 / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering
Except Principal Investigator
電子材料工学 / Electronic materials/Electric materials / Applied materials / 表面界面物性 / 電子デバイス・機器工学 / 極微細構造工学
Keywords
Principal Investigator
化合物半導体 / フェルミ準位ピンニング / 単電子デバイス / 集積回路 / 界面制御 / ナノ構造 / 量子デバイス / 界面準位 / Fermi level pinning / トンネル障壁 … More / 量子ドット / 表面準位 / 表面不活性化 / InGaAs / MIS / フォトルミネセンス / 表面・界面準位 / 電気化学プロセス / ショットキー極限 / 単電子トランジスタ / クーロンブロッケード / 量子現象 / トンネル現象 / 表面・界面 / 高密度集積化 / 原子スケール制御 / III-V族化合物半導体 / GaAs / ピンニング / 半導体自由表面 / Photoluminescence / Compound Semiconductor / CCD / MISFET / interface control / 量子井戸 / 量子細線 / ECRプラズマ / 金属 / 半導体界面 / インジウムリン / パルス法 / electrochemical process / Schottky limit / InP MISFET / ショットキーゲート / MMIC / 量子コンピューティング / 集積化 / 進行波型半導体デバイス / 半導体プラズマ / テラヘルツデバイス / インターディジタル型遅波構造 / 2次元電子ガス / ガリウムヒソ / ガリウムナイトライド / 高誘電率膜 / 消費電力 / C-V / PL / 絶縁体-半導体界面 / フェルミ準位ヒンニンク / DIGSモデル / ショットキ界面 / in-situ評価 / 表面準位密度分布 / ヘテロ界面 / ショットキー障壁 / 表面再結合 / 半導体 / 表面準位分布 / 計算機シミュレ-ション / Surface Recombination / Surface State Density / Free Surface / Hetero-Junction / In-Situ Measurement / Schottky Barrier / 電荷転送撮像素子 / 界面 / MIS形電界効果トランジスタ / 分子線エピタキシー / シリコン / インジウムガリウム砒素 / 超薄膜 / 電荷撮像素子 / MIS構造 / interface / interface states / MBE / 量子構造 / 界面制御層 / 表面電気伝導 / Quantum structure / Compound semiconductor / Surface / interface stete / Interface control / Quantum well / Surface passivation / シリコン界面制御層 / quantum well / quantum wire / compound semiconductors / surface and interface states / surface passivation / silicon interface control layr / photoluminescence / Single electron devices / nanostructure / surfaces and interfaces / tunnel barrier / quantum dot / quantum devices / atomic-scale control / high-density intgration / 非接触・C-V / 超高真空一貫システム / 表面プロセス / 水素終端シリコン表面 / 極博絶縁膜 / 酸窒化膜 / 非接触C-V / 極薄絶縁膜 / トンネル絶縁膜 / 原子スケール表面制御 / contactless C-V / UHV-based system / surface state / interface state / hydrogen-terminated surface / ultrathin insulator / ECR plasma / oxynitride film / 金属微粒子 / ショットキー障壁高 / metal-semiconductor interface / Fermi-level pinning / nano metal particle / Schottky barrier height / 超薄膜シリコン量子井戸 / InP系化合物半導体 / 絶縁ゲート / 統一DIGSモデル / 超高周波大電力デバイス / ultrathin Si quantum well / InP-based materials / insulated-gate structure / ECR plasma process / unified DIGS model / ultra high-frequency and high speed devices / ナノショットキー接合 / ナノ金属ドットアレイ / 導電性プローブAFM / ナノスケールショットキー接合 / 金属ドット / ショットキー障壁高制御 / 金属仕事関数依存性 / 単電子メモリ回路 / 単電子インバータ / nano-Schottky contact / compound semiconductor / nano-metal dot array / conductive prove AFM / quantum device / 量子細線トランジスタ / 量子限界 / 論理回路 / 記憶回路 / MBE選択成長 / quantum wire transistor / III-V compound semiconductor / quantum limit / logic circuit / memory / integrated circuit / Schottky gate / selective MBE growth / 単電子回路 / 二分決定グラフ(BDD) / ヘキサゴナルBDD回路 / ナノショットキーゲート / 量子細線ネットワーク / 電力・遅延積 / 量子輸送 / ヘキサゴナルBDD量子回路 / Single Electron Circuit / Binary Decision Diagram (BDD) / Hexagonal BDD Quantum Circuit / Quantum Dots / Schottky Gate / Quantum Wire Network / Power-Delay Product / Quantum Transport / 水素センサ / 溶液センサ / 窒化物半導体 / ショットキダイオード / センサネットワーク / 集積化センサ / ナノ細線 / 2分決定論理 / hydrogen sensor / liquid sensor / nitride semiconductors / Schottky diode / sensor network / integrated sensor / nanowire / コプレ-ナ線路 / ショットキ接合 / MIS接合 / マイクロ波 / 遅波 / 半導体キャリア / 電磁波伝搬 / 遅延 / 漏波 / 固体進行波相互作用 / クロスタイコプレーナ線路 / Coplanar Waveguide / Schottky Junction / MIS Structure / Microwave / Slow-wave / Integrated Circuit … More
Except Principal Investigator
化合物半導体 / MBE / 電気化学プロセス / ヘテロ接合 / ショットキー障壁 / インジウムリン / GaAs / 金属ー半導体界面 / 界面反応 / ショットキー接合 / 半導体界面 / フェルミ準位ピンニング / 単電子トランジスタ / Schottky barrier / 積層構造 / ショットキ-障壁 / シリコン / 電子波デバイス / 量子干渉効果 / 電子波エレクトロニクス / 超格子 / 超微細加工 / レヤバイレヤ加工 / 溶液 / パルス法 / MIS構造 / MMIC / Compound semiconductor / MIS structure / InAs / InMnAs / 半導体 / 結晶成長 / 量子ドット / Semiconductor / InGaAs / MOCVD / indium phosphide / electrochemical process / HEMT / MOVPE / 電子状態 / 構造安定性 / 積層薄膜構造 / メゾンスコピック現象 / メゾスコピック現象 / 単量子効果 / 原子スケール制御 / 表面処理 / 自然酸化膜 / ナノショットキー / 有機金属気相成長 / 選択成長 / 量子ナノ構造 / 2分岐決定ダイアグラム / カゴメ格子 / フォトニック結晶 / 相補型単電子インバータ / 単電子メモリー / 近藤効果 / 固体進行波相互作用 / マイクロ波増幅 / インタディジタル遅波線路 / ヘリックス型遅波線路 / 遅波線路 / Solid state traveling wave interaction / Microwave amplification / Interdigital slow wave circuits / Helix type slow wave circuits / 希薄磁性半導体 / IIIーV族 / 異常ホ-ル効果 / 分子線エピタキシ / 半磁性半導体 / 磁気抵抗効果 / Diluted Magnetic Semiconductors / III-V Compounds / Compound Semiconductors / Anomalous Hall Effect / Cryxtal growth / Quantum dot / 固体進行波素子 / InP / 界面準位 / ヘテロ界面 / 磁性薄膜 / solid state TWA / Inp / Interface State / クーロン・ブロッケード / ナノ・パワー・エレクトロニクス / 超高速エレクトロニクス / 単電子エレクトロニクス / トンネル現象 / シングル・エレクトロニクス / 有機金属気相成長法 / Crystal Growth / Quantum Dots / 電界効果トランジスタ / 光電子集積回路 / マイクロ波デバイス / 光通信システム / FET / optoelectronic ICs / micro-wave devices / optical communication system / 量子構造 / 2次元電子ガス / インプレーンゲート / スプリットゲート / 量子細線トランジスタ / ショットキーゲート / ショットキーゲット / quantum structure / 2DEG / in-plane gate / split gate / quantum wire transistor / single electron transistor / Schottky gate / 界面制御 / シリコン超薄膜制御層 / interface control / ultrathin Si control layer / 超格子構造 / マイクロ波素子 / 進行波増幅 / プラズマCVD / Superlattice / Microwave device / Traveling-wave amplification Less
  • Research Projects

    (42 results)
  • Research Products

    (220 results)
  • Co-Researchers

    (59 People)
  •  化合物半導体MIS界面準位に関するピンニング・スポット面内分布モデルPrincipal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      2008
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Hokkaido University
  •  電界移動型量子ドットを用いた室温動作高速・超低消費電力単電子スイッチ素子の研究Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire NetworksPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Hokkaido University
  •  半導体2次元電子ガスのプラズマ波によるミリ波・テラヘルツ進行波デバイスの研究Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      2005
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      2001 – 2005
    • Research Category
      Grant-in-Aid for Creative Scientific Research
    • Research Institution
      Hokkaido University
  •  Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky GatesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limitPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

    • Principal Investigator
      橋詰 保
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Hokkaido University
  •  Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its ApplicationPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

    • Principal Investigator
      橋詰 保
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Hokkaido University
  •  Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power DevicesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hokkaido University
  •  "Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"Principal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  単電子デバイスとその高密度集積化Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      1996 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Hokkaido University
  •  "Control of surface and interfaces of nano-structures for single electron devices"Principal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1996 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High VacuumPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  単電子ナノエレクトロニクスの基礎Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Hokkaido University
  •  Control of surface states for III-V semiconductor quantum structures and its application to novel optical devicesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      極微細構造工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  単電子エレクロニクスの基礎Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Hokkaido University
  •  Fabrication and Characterization of Self-organized Quantum Nano-structures.

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  単量子物性のための単原子制御

    • Principal Investigator
      金原 粲
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      The University of Tokyo
  •  クーロン・ブロッケードを利用したナノパワー超高速エレクトロニクスの研究

    • Principal Investigator
      菅野 卓雄
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for Co-operative Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Toyo University
  •  Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.Principal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  電子波デバイスのための極限構造の制御と評価

    • Principal Investigator
      蒲生 健次
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  原子スケール利御薄膜・表面

    • Principal Investigator
      金原 粲
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  金属ー半道体積層界面の基礎

    • Principal Investigator
      平木 昭夫
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  電子波デバイスのための極限構造の制御と評価

    • Principal Investigator
      蒲生 健次
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their SurfacesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University, (Faculty of Engineering)
  •  A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for ImagingPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University, (Faculty of Engineering)
  •  金属ー半導体積層界面の基礎

    • Principal Investigator
      平木 昭夫
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors

    • Principal Investigator
      OHNO Hideo
    • Project Period (FY)
      1990 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  金属ー半導体積層界面の基礎

    • Principal Investigator
      平木 昭夫
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  Solid-state traveling wave amplifier type device formed by semiconductors and helix type slow wave circuits

    • Principal Investigator
      IIZUKA Kouichi
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor CarriersPrincipal Investigator

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  積層構造(金属-半導体,絶縁体-半導体)の総合的研究

    • Principal Investigator
      平木 昭夫
    • Project Period (FY)
      1986
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Osaka University
  •  化合物半導体-絶縁体界面の物性と応用に関する研究Principal Investigator

    • Principal Investigator
      長谷川 英機
    • Project Period (FY)
      1985 – 1987
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Research Institution
      Hokkaido University
  •  Feasibility Study of Traveling Wave Devices Using Compound Semiconductor Superlattice Structures

    • Principal Investigator
      FUKAI Ichiro
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University

All 2009 2008 2007 2006 2005

All Journal Article Presentation Book

  • [Book] "Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks" in Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt)2007

    • Author(s)
      H. Hasegawa, T. Sato, S. Kasai
    • Publisher
      Springer-Verlag (Berlin, Heidelberg)
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Distributed Pinning Spot Model for Highk Insulator - III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol. 7

      Pages: 122-128

    • NAID

      130004439129

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society 54(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 7

      Pages: 122-128

    • NAID

      130004439129

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] 化合物半導体電子デバイスおよび関連材料研究の歴史的発展と将来展望(招待論文)2009

    • Author(s)
      長谷川英機
    • Journal Title

      電子情報通信学会和文論文誌C (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interfaces2009

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology 7

      Pages: 122-128

    • NAID

      130004439129

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-III Nitride Schottky Barriers2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      J. Korean Physical Society 54(印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Histrical Evolution and Future Prospects of Research on Compound Semiconductor Electron Devices and Related Materials (invited)2009

    • Author(s)
      H. Hasegawa
    • Journal Title

      IEICE Trans. Electron. Vol. J92-C (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] 化合物半導体電子デバイスおよび関連材料研究の歴史的発展と将来展望2009

    • Author(s)
      長谷川英機
    • Journal Title

      電子情報通信学会和文論文誌C (招待論文)(印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Current Transport, Fermi Level Pinning and Transient Behavior of Group-Ill Nitride Schottky Barriers (invited)2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Korean Physical Society vol. 54 (in press)

      Pages: 10-10

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on A1GaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1542-1550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング(招待論文)2008

    • Author(s)
      長谷川英機
    • Journal Title

      表面科学 29

      Pages: 76-83

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] On the Band Alignment and Fermi Level Pinning at Compound Semiconductor Interfaces (invited)2008

    • Author(s)
      H. Hasegawa
    • Journal Title

      Hyomen Kagaku Vol. 29, No. 2

      Pages: 76-83

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 255

      Pages: 628-632

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. c 5

      Pages: 1959-1961

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      Proceeding of International Conference on Indium Phosphide and related Materials 20

      Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] PERFORMANCE COMPAEISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Proceedings of International Conference on Indium Phosphide and Related Materials 20

      Pages: 1-4

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 255, No. 3

      Pages: 628-632

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Laver2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2729-2732

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 254

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation andInterface Control in III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      Applied Surface Science 254(invited)

      Pages: 8005-8015

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 6

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science 254

      Pages: 3653-3666

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Surface passivation technology for III V semiconductor nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Journal Title

      Applied Surface Science 255(invited)

      Pages: 628-632

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      accepted for publication in Proceeding of 20th International Conference on Indium Phosphide and related Materials

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Laver2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1569-1578

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] 化合物半導体界面におけるバンドアラインメントとフェルミ準位ピンニング2008

    • Author(s)
      長谷川英機
    • Journal Title

      表面科学 29

      Pages: 76-83

    • NAID

      10021165401

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 26, No. 4

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      accepted for publication in phys. stat. sol. c 5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Gettering2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 1959-1961

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Siuface Science 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254, No. 24

      Pages: 8005-8015

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator- Semiconductor Structixre Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science Vol. 254

      Pages: 3653-3666

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Interface Models and Processing Technologies for Surface Passivation and Interface Control in III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      Applied Surface Science (in press ; available online) 254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] High Temperature Sensing Characteristics of a High Performance Pd/A1GaN/GaN Schottky Diode Hydrogen Sensor Obtained by Oxygen Getterinn2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 1959-1961

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Journal Article] Surface passivation technology for III-V semiconductor nanoelectronics2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      accepted for publication in Applied Surface Science 254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1569-1578

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] GaAs High-k Dielectric Metal-Insulator-Semiconductor Structure Having Silicon Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 5, No. 9

      Pages: 2729-2732

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1542-1550

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) 204

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/ GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa
    • Journal Title

      Current Appl. Phys. Vol. 7

      Pages: 318-327

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Mechanism and Control of Current Transport in GaN and AlGaN Schottky Barriers for Chemical Sensor Applications (invited)2007

    • Author(s)
      H.Hasegawa, M.Akazawa
    • Journal Title

      Applied Surface Science (in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiNx/ Si Interface Control Double Layer on (001) and (Hi) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks2007

    • Author(s)
      H. Hasegawa, T. Sato, S. Kasai
    • Journal Title

      Lateral Alignment of Epitaxial Quantum Dots (Ed. Oliver G. Schmidt), Springer-Verlag, Berlin, Heidelberg Part II.6.2

      Pages: 639-664

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/ Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1481-1490

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Control of Surfaces and Heterointerfaces of AlGaN/GaN System for Sensor Devices and Their On-Chip Integration on Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa
    • Journal Title

      Current Appl. Phys. 7

      Pages: 318-327

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol.301-302

      Pages: 951-954

    • NAID

      120000965574

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (lll)B substrates2007

    • Author(s)
      Isao Tamai, Hideki Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 857-861

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 2629-2633

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1481-1490

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures (invited)2007

    • Author(s)
      H.Hasegawa
    • Journal Title

      Current Applied Physics Vol.7

      Pages: 318-327

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      phys. stat. sol. (c) Vol. 4, No. 7

      Pages: 2629-2633

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (111) B sxirfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Recent Progress and Surface-Related Key Issues in III-V Semiconductor Nanoelectronics(invited)2007

    • Author(s)
      H.Hasegawa
    • Journal Title

      Journal of Korean Physical Society Vol.50, No.3

      Pages: 9-9

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Recent Progress and Surface-Related Key Issues in III-V Semiconductor Nanoelectronics (invited)2007

    • Author(s)
      H.Hasegawa
    • Journal Title

      Journal of Korean Physical Society Vol.50, No.3

      Pages: 9-9

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Journal Title

      physica status solidi (a) Vol. 204, No. 4

      Pages: 1034-1040

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      physica status solidi (a) Vol.204, No.4

      Pages: 1034-1040

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H.Hasegawa, M.Akazawa
    • Journal Title

      J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

    • NAID

      120000955872

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111) B substrates2007

    • Author(s)
      I. Tamai, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 857-861

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Formation of Ultrathin SiN_x/Si Interface Control Double Layer on (001) and (111) GaAs Surfaces for Ex-situ Deposition of High-k Dielectrics2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Sensing Dynamics and Mechanism of a Pd/AlGaN /GaN Schottky Diode Type Hydrogen Sensor2007

    • Author(s)
      M.Akazawa, H.Hasegawa
    • Journal Title

      physica status solidi (c) (in press)(accepted for publication)

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN/GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B 25

      Pages: 1495-1503

    • NAID

      120000955872

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (111)B substrates2007

    • Author(s)
      I.Tamai, H.Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol.301-302

      Pages: 857-861

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] MBE growth and in situ XPS characterization of silicon interlayers on (lll)B surfaces for passivation of GaAs quantum wire devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth Vol. 301-302

      Pages: 951-954

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Minority carrier diffusion lengths in MOVPE-grown n-and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007

    • Author(s)
      K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 787-790

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors2007

    • Author(s)
      K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa
    • Journal Title

      J. Cryst. Growth Vol. 298

      Pages: 787-790

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Hydrogen Sensing Characteristics and Mechanism of Pd/AlGaN /GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol. 25, No. 4

      Pages: 1495-1503

    • NAID

      120000955872

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devipps2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawam, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 249-253

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits2006

    • Author(s)
      T.Tamura, I.Tamai, S.Kasai, T.Sato, H.Hasegawa, T.Hashizume
    • Journal Title

      Jpn. J. Appl. Phys. Vol.45, No.4

      Pages: 3614-3620

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Dynamics and Control of Recombination Process at Semiconductor Surfaces, Interfaces and Nanostructure (invited)2006

    • Author(s)
      H.Hasegawa, T.Sato, S.Kasai, B.Adamowicz, T.Hashizume
    • Journal Title

      Solar Energy Vol.80, No.6

      Pages: 629-644

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006

    • Author(s)
      R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
    • Journal Title

      Journal of Vacuum Science & Technology B Vol. 24, No. 4

      Pages: 2060-2068

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process2006

    • Author(s)
      T.Kimura, H.Hasegawa, T.Sato, T.Hashizume
    • Journal Title

      Jpn. J. Appl. Phys Vol.45, No.4B

      Pages: 3414-3422

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006

    • Author(s)
      T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
    • Journal Title

      Jpn. J. of Appl. Phys. 45

      Pages: 3414-3422

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Sensing mechanism of InP hydrogen sensors using Pt Schottky diodes formed by electrochemical process2006

    • Author(s)
      T. Kimura, H. Hasegawa, T. Sato, T. Hashizume
    • Journal Title

      Jpn. J. of Appl. Phys. Vol. 45, No. 4B

      Pages: 3414-3422

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Liquid Phase Sensors Using Open-Gate AlGaN/GaN HEMT Structure2006

    • Author(s)
      T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
    • Journal Title

      J. Vac. Sci. Technol. B Vol.24, No.4

      Pages: 1972-1976

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 2148-2155

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Growth Simulation and Actual MBE Growth of Triangular GaAs Nanowires on Patterned(111)B Substrates2006

    • Author(s)
      I.Tamai, T.Sato, H.Hasegawa, T.Hashizume
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol.4

      Pages: 19-24

    • NAID

      130004933903

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Future of heterostructure microelectronics and roles of materials research for its progress (invited)2006

    • Author(s)
      H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
    • Journal Title

      IEICE Trans. Electron. Vol. E89-C, No. 7

      Pages: 874-882

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Electrochemicai Formation of Chaotic and Regular Nanostractures on (001) and (111)B InP Substrates and Their Photpluminescence Characterizations2006

    • Author(s)
      T.Fujino, T.Kimura, T.Sato, H.Hasegawa, T.Hashizume
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol.4

      Pages: 184-191

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Precisely Controlled Anodic Etching for Processing of GaAs-based Quantum Nanostructures and Devices2006

    • Author(s)
      N. Shiozaki, T. Sato, M. Akazawa, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 249-253

    • NAID

      120000953027

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress (invited)2006

    • Author(s)
      H.Hasegawa, S.Kasai, T.Sato, H.Hashizume
    • Journal Title

      IEICE TRANS. ELECTRON Vol.89, No.7

      Pages: 874-882

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006

    • Author(s)
      T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 2087-2092

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Selective molecular beam epitaxy growth of size-and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006

    • Author(s)
      T. Sato, T. Oikawa, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2087-2092

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Gate Control, Surface Leakage Currents and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates2006

    • Author(s)
      S.Kasai, J.Kotani, T.Hashizume, H.Hasegawa
    • Journal Title

      Journal of Electronic Materials Vol.35, No.4

      Pages: 568-575

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Future of heterostmcture microelectronics and roles of materials research for its progress (invited)2006

    • Author(s)
      H. Hasegawa, S. Kasai, T. Sato, T. Hashizume
    • Journal Title

      IEICE Trans. Electron. E89-C

      Pages: 874-882

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111)B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV 132

      Pages: 95-99

    • NAID

      120000958460

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Suppression of Device Interference Effects in GaAs Nanodevices by Surface Passivation using Si Interface Control Layer2006

    • Author(s)
      R.Jia, N.Shiozaki, S.Kasai, H.Hasegawa
    • Journal Title

      J. Vac. Sci. Technol. B Vol.24, No.4

      Pages: 2060-2068

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer2006

    • Author(s)
      R. Jia, H. Hasegawa, N. Shiozaki, S. Kasai
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2060-2068

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006

    • Author(s)
      T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 1972-1976

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Selective MBE Growth of Size- and Position-Controlled GaN/AlGaN Nanowires on Non-planar (0001) Substrates and Its Growth Mechanism2006

    • Author(s)
      T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
    • Journal Title

      J. Vac. Sci. Technol. B Vol.24, No.4

      Pages: 2087-2092

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Liquid-phase sensors using open-gate AlGaN/ GaN high electron mobility transistor structure2006

    • Author(s)
      T. Kokawa, T. Sato, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B Vol. 24, No. 4

      Pages: 1972-1976

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006

    • Author(s)
      S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
    • Journal Title

      Journal of Electronic Materials Vol. 35, No. 4

      Pages: 568-575

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Journal Title

      J. Vac. Sci. & Technol. B 24

      Pages: 2148-2155

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuit for Ubiquitous Network Era (invited)2006

    • Author(s)
      H.Hasegawa, S.Kasai, T.Sato
    • Journal Title

      International Journal of High Speed Electronics and Systems Vol.16, No.2

      Pages: 421-436

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Gate control, surface leakage currents. and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale Schottky gates2006

    • Author(s)
      S. Kasai, J. Kotani, T. Hashizume, H. Hasegawa
    • Journal Title

      Journal of Electronic Materials 35

      Pages: 568-575

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Self-assembled formation of InP nanopore arrays by photoelectrochemical anodization in HCl based electrolyte2006

    • Author(s)
      T.Sato, T.Fujino, H.Hasegawa
    • Journal Title

      Applied Surface Science Vol.252, No.15

      Pages: 5457-5461

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (ill) B Surfaces2006

    • Author(s)
      M. Akazawa, N. Shiozaki, H. Hasegawa
    • Journal Title

      Journal de Physique IV Vol. 132

      Pages: 95-99

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Large Reduction of Leakage Currents in AlGaN Schottky Interfaces by a Novel Surface Control Process and Its Mechanism2006

    • Author(s)
      J.Kotani, M.Kaneko, S.Kasai, H.Hasegawa, T.Hashizume
    • Journal Title

      J. Vac. Sci. Technol. B Vol.24, No.4

      Pages: 2148-2155

    • Data Source
      KAKENHI-PROJECT-18360002
  • [Journal Article] Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits2006

    • Author(s)
      T.Nakamura, Y.Abe, S.Kasai, H.Hasegawa, T.Hashizume
    • Journal Title

      Journal of Physics E Vol.38, No.1

      Pages: 104-107

    • Data Source
      KAKENHI-PROJECT-18656089
  • [Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN (0001) Substrates2005

    • Author(s)
      T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
    • Journal Title

      Applied Surface Science 244(1-4)

      Pages: 84-87

    • NAID

      120000953792

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation2005

    • Author(s)
      N.Shiozaki, S.Anantathanasarn, T.Sato, T.Hashizume, H.Hasegawa
    • Journal Title

      Applied Surface Science 244(1-4)

      Pages: 71-74

    • NAID

      120000955195

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Cross-sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates2005

    • Author(s)
      I.Tamai, T.Sato, H.Hasegawa
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)

      Pages: 2652-2656

    • NAID

      10022540457

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures2005

    • Author(s)
      H.Hasegawa, T.Sato
    • Journal Title

      ELECTROCHIMICA ACTA 50(15)

      Pages: 3015-3027

    • NAID

      120000964124

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy2005

    • Author(s)
      N.Shiozaki, T.Sato, H.Hasegawa
    • Journal Title

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)

      Pages: 1714-1721

    • NAID

      120000961770

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Speed-power performances of quantum wire switches controlled by nanometer-scale schottky wrap gates for GaAs based hexagonal BDD quantum2005

    • Author(s)
      Yumoto, M, Kasai, S, Hasegawa, H
    • Journal Title

      INSTITUTE OF PHYSICS CONFERENCE SERIES Vol.184

      Pages: 213-216

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure2005

    • Author(s)
      Matsuo, K, Negoro, N, Kotani, J, Hashizume, T, Hasegawa, H
    • Journal Title

      APPLIED SURFACE SCIENCE 244(1-4)

      Pages: 273-276

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Anomalous current leakage and depletion width control in nanometer scale Schottky gates formed on AlGaAs/GaAs surface2005

    • Author(s)
      Jia, R, Kasai, S, Hasegawa, H
    • Journal Title

      INSTITUTE OF PHYSICS CONFERENCE SERIES Vol.184

      Pages: 21-26

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors2005

    • Author(s)
      Kotani, J, Kasai, S, Hashizume, T, Hasegawa, H
    • Journal Title

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)

      Pages: 1799-1807

    • NAID

      120000958033

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Removal of Side-gating Effects in GaAs Quantum Nanodevices with Nano-Schottky Gates by Surface Passivation Using Si Interface Control Layer2005

    • Author(s)
      R.Jia, N.Shiozaki, S.Kasai, H.Hasegawa
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol.3

    • NAID

      130004933884

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Hydrogen Response of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure2005

    • Author(s)
      K.Matsuo, T.Kimura, H.Hasegawa T.Hashizume1)
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol.3

      Pages: 314-318

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted MBE on Pre-Patterned Substrates2005

    • Author(s)
      T.Sato, T.Oikawa, H.Hasegawa
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)

      Pages: 2487-2491

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates2005

    • Author(s)
      T.Sato, I.Tamai, H.Hasegawa
    • Journal Title

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)

      Pages: 1706-1713

    • NAID

      120000958805

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions2005

    • Author(s)
      Hashim, AM, Kasai, S, Hashizume, T, Hasegawa, H
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS Vol.44(4B)

      Pages: 2729-2734

    • NAID

      10015705451

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Journal Article] Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation2005

    • Author(s)
      J.Kotani, S.Kasai, H.Hasegawa, T.Hashizume
    • Journal Title

      e-Journal of Surface Science and Nanotechnology Vol.3

      Pages: 433-438

    • NAID

      130004438970

    • Data Source
      KAKENHI-PROJECT-17656099
  • [Presentation] Capacitance-Voltage and Photoluminescence Study of High-k /III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      Masamichi Akazawa, Marcin Miczek, Boguslawa Adamowicz, Hideki Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate A anN taaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-12
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN /GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-36)
    • Place of Presentation
      Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009 (SSNS'09)
    • Place of Presentation
      Shizukuishi, Iwate, Japan, January
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Current Collapse Transient Behavior and Its Mechanism in Submicron-Gate AlGaN/GaN Heterostructure Transistors2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-12
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009
    • Place of Presentation
      Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
    • Year and Date
      2009-01-27
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Anomalous Admittance Behavior of III-V Insulator-Semiconductor Interfaces and Its Mechanism2009

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The Symposium on Surface and Nano Science 2009
    • Place of Presentation
      Shizukuishi Prince Hotel, Shizukuishi, Iwate, Japan
    • Year and Date
      2009-01-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Capacitance-Voltage and Photoluminescence Study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Laver2009

    • Author(s)
      M. Akazawa, M. Miczek, B. Adamowicz and H. Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semicoinductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-13
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Capacitance-Voltage and Photoluminescence study of High-k/III-V Semiconductor Interfaces Controlled by Si Interface Control Layer2009

    • Author(s)
      M. Akazawa, M. Miczek, B. Adamowicz, H. Hasegawa
    • Organizer
      36th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Santa Barbara, California, USA
    • Year and Date
      2009-01-13
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator - III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology QSSS-5)
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal- Insulator- Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2008-05-20
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      Univer Sity of California Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2008
    • Place of Presentation
      Hotel Appi Grand, Appi, Iwate, Japan
    • Year and Date
      2008-01-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] III-V半導体ナノェレクトロニクスの新展開(招待講演)2008

    • Author(s)
      長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] PERFORMANCE COMPARISON OF InP AND A1GaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN/GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th Intemational Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2008-08-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Steady State and Transient Behavior of Currents in Low-Leakage Planar Schottky Diodes Formed on AlGaN /GaN Heterostructures2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico. USA
    • Year and Date
      2008-01-16
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference (EMC2008)
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-HI Nitride Surfaces for Power Electronics and Sensor Electronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea(invited)
    • Year and Date
      2008-08-28
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Interface Control of High-k MOS Gate Stack for GaAs nanowire Transistors (invited)2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      Symposium on Surface and Nano Science 2008
    • Place of Presentation
      Hotel Appi Grand, Appi, Iwate, Japan
    • Year and Date
      2008-01-23
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Distributed Pinning Spot Model for High-k Insulator-III-V Semiconductor Interface2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-15
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] AIGaN/GaNプレーナ・ショットキダイオードの低速分散性過渡応答2008

    • Author(s)
      長谷川英機, 赤澤正道
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2008-05-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] SURFACE STATE EFFECTS AND SURFACE PASSIVATION WITH A SILICON INTERFACE CONTROL LAYER FOR III-V NANOWIRE TRANSISTORS2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 32nd Workshop on Compound Semiconductor Device and Integrated Circuits held in Europe (WOCSDICE2008)
    • Place of Presentation
      Leuven, Belgium
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] On the Anomalous Admittance Behavior of Non-Silicon High-k MOS Structures2008

    • Author(s)
      赤澤正道、長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市
    • Year and Date
      2008-08-17
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on AlGaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      UniverSity of Californmia Santa Barbara, Califomia, USA
    • Year and Date
      2008-06-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland(invited)
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs MetaHnsulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC2008)
    • Place of Presentation
      Lodz, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials (IPRM08)
    • Place of Presentation
      Versailles, France
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Surfaces and Interfaces for III-V Semiconductor Nanoelectronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Anomalous Behavior of Capacitance and Conductance of III-V Metal-Insulator-Semiconductor Capacitors2008

    • Author(s)
      M. Akazawa and H. Hasegawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2008

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2008)
    • Place of Presentation
      Jeju, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      La Fonda Hotel, Santa Fe, New Mexico, USA
    • Year and Date
      2008-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Optimization of Si Interface Control Layer Thickness for High-k GaAs Metal-Insulator-Semiconductor Structures2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      9th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Lodz, Poland
    • Year and Date
      2008-06-04
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Slow Response Instability in the Planar Pd Schottky Diode Hydrogen Sensor Formed on A1GaN/GaN Wafer2008

    • Author(s)
      H. Hasegawa and M. Akazawa
    • Organizer
      2008 Electronic Material Conference
    • Place of Presentation
      University of California Santa Barbara, California, USA
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] III-V半導体ナノエレクトロニクスの新展開2008

    • Author(s)
      長谷川英機
    • Organizer
      社団法人未踏科学技術協会主催平成20年度飯綱・サイエンスサマー道場
    • Place of Presentation
      長野県長野市(招待講演)
    • Year and Date
      2008-08-17
    • Data Source
      KAKENHI-PROJECT-20656006
  • [Presentation] PERFORMANCE COMPARISON OF InP AND AlGaN/GaN SCHOTTKY DIODE HYDROGEN SENSORS2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      20th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles, France
    • Year and Date
      2008-05-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] シリコン界面制御層を有するGaAs高誘電体MISキャパシタのアドミッタンス2008

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市
    • Year and Date
      2008-03-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Frequency Dispersion of GaAs High-k MIS Capacitors with Si Interface Control Layer2008

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      35th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-35)
    • Place of Presentation
      Santa Fe, New Mexico, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] An Overview on Band Alignment and Fermi Level Pinnine at Semiconductor Interfaces (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Laver Based Surface Passivation Method and Related High-k MIS Gate stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      International Symposium on Advanced nanodevices and Nanotechnology
    • Place of Presentation
      Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
    • Year and Date
      2007-12-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      International Symposium on Advanced nanodevices and Nanotechnology
    • Place of Presentation
      Waikoloa Beach Marriot, Waikoloa, Hawaii, USA
    • Year and Date
      2007-12-03
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductors (ISCS-34)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semi- conductor Surface Passivation
    • Place of Presentation
      Zakopane, Poland
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] An Overview on Band Alignment and Fermi Level Pinning at Semiconductor Interfaces (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      International Workshop on High-k Dielectrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      2007-05-24
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hydrogen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] GaAs High-k Dielectric MOS Structure Having Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 34th International Symposium on Compound Semiconductor
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2007-10-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007
    • Place of Presentation
      Appi, Iwate, Japan
    • Year and Date
      2007-01-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Year and Date
      2007-01-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Interface Control Technology for Surface Passivation of III-V Semiconductor Nanostructures (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th International Workshop on Semiconductor Surface Passivation
    • Place of Presentation
      GEOVITA, Zakopane, Poland
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Dynamic behavior of metal contacts formed on AlGaN/GaN heterostructure2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      7th International Conference on Nitride Semiconductor
    • Place of Presentation
      MG Grand Hotel, Las Vegas, Nevada, USA
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at Highk Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Silicon Interface Control Layer Based Surface Passivation Method and Related High-k MIS Gate Stack for GaAs Nanowire MISFETs2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 2007 International Symposium on Advanced nanodevices and Nanotechnology (ISANN2007)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111)B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-21
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      MBE-Taiwan 2007
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2007-05-21
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Growth Mechanism and Fermi Level Unpinning in Silicon Interface Control Layers for Surface Passivation of (001) and (111) GaAs and AlGaAs Surfaces2007

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference (EMC2007)
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on High-k Dielectrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Year and Date
      2007-05-24
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Schottky Interfaces of AlGaN/GaN system for hydrogen sensor applications (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Symposium on Surface and Nano Science 2007 (SSNS '07)
    • Place of Presentation
      Iwate, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Tropical Eco Resort, Manaus-Amazonas, Brazil
    • Year and Date
      2007-08-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and Surface/Interface Control of Nanostructures for III-V Nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa
    • Organizer
      MBE-Taiwan 2007
    • Place of Presentation
      Kaohsiung
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE growth and in-situ XPS characterization of silicon interlayers for surfaces passivation of GaAs quantum devices2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 RCIQE International Seminar on"Advanced Semiconductor Materials and Devices, "
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2007-02-09
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Passivation of III-V Surface by Si Interface Control Layer and Its Application of high-k MIS Gate Stack (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Interntional Workshop on High-k Di- electrics on High Speed Channel Materials
    • Place of Presentation
      Hinsiu, Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Complete Removal of Fermi Level Pinning at High-k Dielectric/GaAs (001) and (111) B Interfaces by a Silicon Interface Control Layer2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-21
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Si界面制御層によるHfO2/GaAs界面の制御2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Surface passivation technology for III-V semiconductor nanoelectronics (invited)2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11)
    • Place of Presentation
      Manaus-Amazonas, Brazil
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Pd/AlGaN/GaNショットキーダイオード形水素センサの大気中動作特性2007

    • Author(s)
      赤澤正道, 長谷川英機
    • Organizer
      第68回応用物理学学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Hydrogen Response Characteristics and Mechanism of Pd/ AlGaN/ GaN Schottky Diodes Subjected to Oxygen Gettering2007

    • Author(s)
      Hideki Hasegawa, Masamichi Akazawa
    • Organizer
      34th Conference on the Physics & Chemistry of Semiconductor Interfaces (PCSI-34)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing and current transport mechanisms of a high performance Pd/AlGaN/GaN Schottky diode hvdroeen sensor2007

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Performance Enhancement and Sensing Mechanism of Pd/AlGaN/GaN Hydrogen Sensors Subjected to Oxygen Gettering2007

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      2007 Electronic Material Conference
    • Place of Presentation
      University of Notre Dame, South Bend, Indiana, USA
    • Year and Date
      2007-06-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces (SSSI2006)
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T. Hashizume
    • Organizer
      2006 Electronic Materials Conference (EMC2006)
    • Place of Presentation
      Pennsylvania, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      Technical Digest of International Workshop on Nitride Semiconductors (IWN2006)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Understanding and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      5th Solid State Surfaces and Interfaces
    • Place of Presentation
      Smolenice Castle, Slovak Republic
    • Year and Date
      2006-11-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Group Ill-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2nd International Workshop of NANO Systems Institute
    • Place of Presentation
      Seoul, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111) B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      M. Akazawa, H. Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2006-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Oxygen Induced Gate Leakage in AlGaN/GaN HFETs and Its Suppression by a Novel Surface Control Process2006

    • Author(s)
      J. Kotani, M. Kaneko, H. Hasegawa, T., Hashizume
    • Organizer
      Electronic Materials Conference
    • Place of Presentation
      Pennsylvania, USA
    • Year and Date
      2006-06-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications (ISPA2006)
    • Place of Presentation
      Jeju, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Year and Date
      2006-12-07
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006

    • Author(s)
      I. Tamai, H. Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2006-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] MBE Growth and In-Situ XPS Characterization of Silicon Interlayers on (111)B Surfaces for Passivation of GaAs Quantum Wire Devices2006

    • Author(s)
      Masamichi Akazawa, Hideki Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th Intemational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Future Challenges and Surface Related Key Issues in III-V Semiconductor Nanoelectronics for Ubiquitous Network Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'06)
    • Place of Presentation
      Perth, Australia
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (invited panelist presentation)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
    • Place of Presentation
      Gyeongu, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, KMatsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] III-V Semiconductor Nanoelectronics for Post Si CMOS Era (nvited panelist presentation)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2006 (IEEE NMDC'06)
    • Place of Presentation
      Gyeongju, Korea
    • Year and Date
      2006-10-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] In-situ X-ray photoelectron spectros copy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors2006

    • Author(s)
      M. Akazawa, H. Hasegawa, R. Jia
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06)
    • Place of Presentation
      Cadiz, Spain
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      Japan-Germany Joint Workshop, 2006 "Nano-Electronics"
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Sensing Dynamics and Mechanism of a Pd/AlGaN/GaN Schottky Diode Type Hydrogen Sensor2006

    • Author(s)
      H. Hasegawa, M. Akazawa
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-25
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of Group-III Nitride Surfaces for Power Electronics and Sensor Electronics (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      The 14th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2006-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Challenges of III-V Nanoelectronics towards Post Si CMOS Era (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      Japan-Germany Joint Workshop, 2006"Nano-Electronics"
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2006-10-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Selective MBE Growth of Hexagonal Networks of Trapezoidal and Triangular GaAs Nanowires on Patterned (111) B Substrates2006

    • Author(s)
      Isao Tamai, Hideki Hasegawa
    • Organizer
      The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
    • Place of Presentation
      Tokyo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Control of Group III-Nitride Surfaces and Interfaces for Sensor Applications and Nanostructure Formation (invited)2006

    • Author(s)
      H. Hasegawa
    • Organizer
      2^<nd> International Workshop of NANO Systems Institute
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2006-06-09
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • [Presentation] Characterization and Control of AlGaN Schottky Diodes for Performance Enchancement of Hydrogen Sensors2006

    • Author(s)
      H. Hasegawa, K. Matsuo, T. Kimura, J. Kotani, M. Akazawa, T. Hashizume
    • Organizer
      8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
    • Place of Presentation
      Cadiz, Spain
    • Year and Date
      2006-05-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360002
  • 1.  AKAZAWA Masamichi (30212400)
    # of Collaborated Projects: 16 results
    # of Collaborated Products: 139 results
  • 2.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 15 results
    # of Collaborated Products: 0 results
  • 3.  FUHIKURA Hajime (70271640)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 4.  KASAI Seiya (30312383)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 6 results
  • 5.  MOTOHISA Jun-ich (60212263)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 6.  金原 桀 (90010719)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 7.  SUGANO Takuo (50010707)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 8.  FUKUI Takashi (30240641)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 9.  IIZUKA Kouichi (30193147)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 10.  OHNO Hideo (00152215)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 11.  WU Nan-jan (00250481)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 12.  平木 昭夫 (50029013)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 13.  川辺 光央 (80029446)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
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  • 15.  YASUDA Yukio (60126951)
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  • 19.  SAWAKI Nobuhiko (70023330)
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  • 20.  AMEMIYA Yoshihito (80250489)
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  • 30.  兼城 千波 (30318993)
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  • 31.  SEKI Shouhei
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  • 32.  JIANG Chao
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  • 38.  SHIMOZUMA Mitsuo (70041960)
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  • 39.  高柳 邦夫 (80016162)
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  • 40.  須藤 健 (60006236)
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  • 45.  難波 進 (70029370)
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  • 46.  佐藤 威友 (50343009)
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  • 47.  賈 鋭 (30374606)
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  • 48.  高橋 平七郎 (80001337)
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  • 50.  阿部 寛 (60001187)
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  • 53.  高木 俊宜 (10025801)
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  • 56.  村山 洋一 (40057956)
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  • 57.  TSUBOUCHI Natsuro
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  • 58.  SAKAI Takamasa
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  • 59.  UEDA Daisuke
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