Motohisa Junichi 本久順一

… Alternative Names

Researcher Number	60212263
Other IDs
External Links
Affiliation (Current)	2022: 北海道大学, 情報科学研究院, 教授
Affiliation (based on the past Project Information) *help	2018 – 2021: 北海道大学, 情報科学研究院, 教授 2009 – 2018: 北海道大学, 情報科学研究科, 教授 2014 – 2015: 北海道大学, 大学院情報科学研究科, 教授 2012 – 2013: 北海道大学, 大学院・情報科学研究科, 教授 2007 – 2010: Hokkaido University, 大学院・情報科学研究科, 教授 … More
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Mathematics and Physics … More
Keywords	Principal Investigator 選択成長 / 半導体ナノワイヤ / 有機金属気相成長 / 量子ドット / 半導体 / 表面超格子 / 単一光子光源 / 有機金属気相選択成長 / 発光ダイオード / ナノワイヤ … More Except Principal Investigator 結晶成長 / 窒化ガリウム / 有機金属気相成長 / 選択成長 / 量子ドット / 界面制御 / interface control / フェルミ準位ピンニング / 単電子トランジスタ / 近藤効果 / ナノワイヤ / 半導体物性 / 多孔質構造 / ナノ材料 / 表面制御 / 表面処理 / Gallium Nitride / surface control / Al_2O_3 / 量子ナノ構造 / 相補型単電子インバータ / 2分岐決定ダイアグラム / 単電子メモリー / スピンエレクトロニクス / 化合物半導体 / 窒化物半導体 / 光電気化学 / エネルギー変換 / 半導体 / Semiconductor / GaAs / 量子細線 / 電気化学プロセス / ショットキー接合 / 自然酸化膜 / GaN / Schottky contact / surface treatment / Fermi level pinning / HFET / トランジスタ / カゴメ格子 / フォトニック結晶 / 強磁性体 / III-V族化合物半導体 / ナノ構造 / インジウム燐 / ガリウムインジウム砒素 / マンガン砒素 / 1次元物性 / 磁性体 / 単電子メモリ / 単電子輸送 / 半導体ナノ構造 / 光吸収率 / 太陽電池 / 半導体ナノワイヤ / 強磁性体ナノ構造 / スピン偏極発光素子 / ボトムアップ形成 / 複合ナノ構造 / 半導体ナノテクノロジ / スピントロニクス / 振動発電 / エネルギーハーベスティング / 環境発電 / 無線センサ / RFID / スマートセンサー / センサーネットワーク / 無線センサー / 環境エネルギー / センサネットワーク / 化学センサ / 低損傷プロセス / 高電子移動度トランジスタ / 表面・界面物性 / 電子・電気材料 / Cryxtal growth / Quantum dot / 有機金属気相成長法 / Crystal Growth / Quantum Dots / MOCVD / 量子井戸 / 表面・界面準位 / 表面不活性化 / シリコン界面制御層 / フォトルミネセンス / quantum well / quantum wire / compound semiconductors / surface and interface states / surface passivation / silicon interface control layr / photoluminescence / マスク基板 / 量子ドットネットワーク / 単電子回路 / 単電子素子・回路 / クーロン振動 / クーロンギャップ / 論理回路 / 単電子素子 / クーロンブロッケード / MOVPE Growth / Selective Area Growth / Masked Substrate / Quantum Dot / Quantum Wire / Quantum Dot Network / Single Electron Transistor / Single Electron Circuit / ショットキー極限 / 金属 / 半導体界面 / 金属微粒子 / ショットキー障壁高 / インジウムリン / パルス法 / electrochemical process / Schottky limit / metal-semiconductor interface / Fermi-level pinning / nano metal particle / Schottky barrier height / オーミック接合 / フェルミン準位ピンニング / ohmic contact / Fermi level pinnning / natural oxide / MIS構造 / 窒化シリコン酸 / アルミナ膜 / フェルミ準位ビンニング / 窒化シリコン膜 / MIS接合 / ECRプラズマ / MIS structure / SiN_χ / ヘテロ構造 / 窒化カリウム / heterointerface / 半導体超微細化 / 光物性 / 新エネルギー / 垂直自立型ナノワイヤ / スピントランジスタ / ボトムアップ / メゾスコピック系 / 低損傷エッチング / 電子デバイス / 電気化学反応 / ウェットエッチング / 薄膜・量子構造 / トンネルFET / 電気・電子材料 / 半導体デバイス / 省エネルギー / ナノワイヤ材料 / シリコン / ゲルマニウム Less

Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires
- Principal Investigator
  
  深田直樹
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  National Institute for Materials Science
Generation of Vector Beams using Semiconductor NanowiresPrincipal Investigator
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Study on the fabrication of Vertical FETs using GaN-Based Singular Nanostructures and Their Novel Characterization MethodPrincipal Investigator
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applications
- Principal Investigator
  
  冨岡克広
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Hokkaido University
Fabrication and Characterization of Vertical FETs using GaN-based NanowiresPrincipal Investigator
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Bottom-Up Integration of Vertical Nanowire Spin-Transistors on Silicon
- Principal Investigator
  
  Hara Shinjiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanostructural physics
- Research Institution
  Hokkaido University
Study on Light-Emittind Devices on Si Substrates based on Semiconductor NanowiresPrincipal Investigator
- Principal Investigator
  
  Motohisa Junichi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
A Novel Photodetector Utilizing Semiconductor NanowiresPrincipal Investigator
- Principal Investigator
  
  Junichi Motohisa
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesis
- Principal Investigator
  
  Taketomo Sato
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Development of passive wireless sensor powered by vibration generator for safety surveillance of social infractructure
- Principal Investigator
  
  IGARASHI Hajime
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Social systems engineering/Safety system
- Research Institution
  Hokkaido University
Fabrication of nanowire-based light emitting nanodevicesPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructuresPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate
- Principal Investigator
  
  HARA Shinjiro
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Development of Quantum Integrated Hardwares based on Semiconductor NanowiresPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Mathematics and Physics
- Research Institution
  Hokkaido University
有機金属気相選択成長法によるガリウムヒ素単電子メモリの作製と評価
- Principal Investigator
  
  福井孝志
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
半導体ナノワイヤを用いた単一光子光源の研究Principal Investigator
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Hokkaido University
半導体・強磁性体複合型ナノワイヤを用いた縦型ナノスピントランジスタの研究
- Principal Investigator
  
  原真二郎
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to DevicesPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
半導体人工格子による磁性制御Principal Investigator
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Surface/interface control of high-frequency and high-power transistors based on GaN materials
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
単一電子入力・単一電子出力型記憶素子の研究
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス
- Principal Investigator
  
  福井孝志
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Hokkaido University
Formation of Photonic Crystals by Selective Area Growth and Their ApplicationsPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Metal contact formation to GaN based on the interface control technologies
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
"Insulated gate structures on GaN and their interface properties"
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Formation and Characterization of High Density Semiconductor Quantum Dots
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  1997 – 2000
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Physics
- Research Institution
  HOKKAIDO UNIVERSITY
"Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
人工原子″スーパーアトム″の作製と評価Principal Investigator
- Principal Investigator
  
  SAITOH Toshiya, 本久順一
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido University
Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  HOKKAIDO UNIVERSITY
Fabrication and Characterization of Self-organized Quantum Nano-structures.
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic PropertiesPrincipal Investigator
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant
- Principal Investigator
  
  FUKUI Takashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University

[Book] Nanowire Field-Effect Transistors (in Fundamental Properties of Semiconductor Nanowires)2021
- Author(s)
  Junichi Motohisa and Shinjiro Hara
- Total Pages
  60
- Publisher
  Springer Nature Singapore Pte Ltd
- ISBN
  9789811590498
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Book] Fundamental Properties of Semiconductor Nanowires (分担執筆, Chapter名: Nanowire Field Effect Transistors)2020
- Author(s)
  Junichi Motohisa, Shinjiro Hara
- Total Pages
  57
- Publisher
  Springer Nature AG.(Switzerland)
- ISBN
- Data Source
  KAKENHI-PROJECT-17H02727
[Book] Junichi Motohisa and Shinjirho Hara2020
- Author(s)
  Junichi Motohisa and Shinjirho Hara
- Publisher
  Springer
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Book] Nanowire Field Effect Transistors (in "Fundamental Properties of Semiconductor Nanowires")2020
- Author(s)
  Junichi Motohisa and Shinjirho Hara
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-17H03223
[Book] "III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Chapter 8, "Advances in III-V Semiconductor Nanowires and Nanodevices", Bentham eBooks, eISBN: 978-1-60805-052-92011
- Author(s)
  Junichi Motohisa
- Total Pages
  13
- Publisher
  Bentham Science Publishers Ltd
- Data Source
  KAKENHI-PROJECT-23360129
[Book] "III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Advances in III-V Semiconductor Nanowires and Nanodevices2011
- Author(s)
  J. Motohisa, K. Tomioka, B. Hua, K. S. K. Varadwaj, S. Hara, K. Hiruma, and T. Fukui
- Total Pages
  178
- Publisher
  Bentham Science Publishers Ltd
- Data Source
  KAKENHI-PROJECT-23360129
[Journal Article] InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一、福井孝志
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 120 (SDM2020-52) Pages: 13-16
- Data Source
  KAKENHI-PROJECT-19H02184
[Journal Article] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020
- Author(s)
  Tomioka Katsuhiro、Gamo Hironori、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  2020 IEEE International Electron Devices Meeting (IEDM)
  
  Volume: IEDM-2020 Pages: 429-432
- DOI
  10.1109/iedm13553.2020.9371991
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
[Journal Article] Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs2020
- Author(s)
  Akamatsu Tomoya、Tomioka Katsuhiro、Motohisa Junichi
- Journal Title
  
  Nanotechnology
  
  Volume: 31 Pages: 394003-394003
- DOI
  10.1088/1361-6528/ab9bd2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20H02176
[Journal Article] Selective-Area Growth of AlInAs Nanowires2020
- Author(s)
  Tai Yoshiki、Gamo Hironori、Motohisa Junichi、Tomioka Katsuhiro
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Pages: 149-153
- DOI
  10.1149/09806.0149ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
[Journal Article] Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes2020
- Author(s)
  Tomioka Katsuhiro、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  Scientific Reports
  
  Volume: 10
- DOI
  10.1038/s41598-020-67625-y
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor2020
- Author(s)
  Tomioka Katsuhiro、Ishizaka Fumiya、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Pages: 123501-123501
- DOI
  10.1063/5.0014565
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] Vertical InGaAs Nanowire Array Photodiodes on Si2019
- Author(s)
  Chiba Kohei、Yoshida Akinobu、Tomioka Katsuhiro、Motohisa Junichi
- Journal Title
  
  ACS Photonics
  
  Volume: 6 Pages: 260-264
- DOI
  10.1021/acsphotonics.8b01089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
[Journal Article] Vertical Tunnel FET Technologies using III-V/Si heterojunciton2019
- Author(s)
  K. Tomioka, H. Gamo, J. Motohisa
- Journal Title
  
  ECS Transaction
  
  Volume: 92 Pages: 71-78
- DOI
  10.1149/ma2019-02/25/1168
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy2019
- Author(s)
  Motohisa Junichi、Kameda Hiroki、Sasaki Masahiro、Tomioka Katsuhiro
- Journal Title
  
  Nanotechnology
  
  Volume: 30 Pages: 134002-134002
- DOI
  10.1088/1361-6528/aafce5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
[Journal Article] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform2017
- Author(s)
  Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa
- Journal Title
  
  AIP Advances
  
  Volume: 7 Pages: 125304-125304
- DOI
  10.1063/1.4993689
- NAID
  120006380383
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080, KAKENHI-PROJECT-16K14221
[Journal Article] Composition-Dependent Growth Dynamics of Selectively Grown InGaAs Nanowires2014
- Author(s)
  Y. Kohashi, S. Hara, J. Motohisa
- Journal Title
  
  Mater. Res. Express
  
  Volume: VOL.1 Pages: 15-036
- DOI
  10.1088/2053-1591/1/1/015036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J01918, KAKENHI-PROJECT-23360129, KAKENHI-PROJECT-25600034
[Journal Article] Far-Field Emission Patterns of Nanowire Light-Emitting Diodes2014
- Author(s)
  Junichi Motohisa, Yoshinori Kohashi, and Satoshi Maeda
- Journal Title
  
  Nano Letters
  
  Volume: 14 Pages: 3653-3660
- DOI
  10.1021/nl501438r
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360114
[Journal Article] Selective-area growth InP-based nanowires and their optical properties2012
- Author(s)
  J. Motohisa
- Journal Title
  
  Indium Phosphide and Related Materials (IPRM),2012 International Conference on
  
  Pages: 249-252
- DOI
  10.1109/iciprm.2012.6403370
- Data Source
  KAKENHI-PROJECT-24360114
[Journal Article] Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE2011
- Author(s)
  M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: VOL.315 Pages: 148-151
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si2010
- Author(s)
  K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Journal Title
  
  Nano Letters Vol.10
  
  Pages: 1639-1644
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Vertical Surrounding Gate Transistors using single InAs Nanowires Grown on Si Substrate2010
- Author(s)
  T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
- Journal Title
  
  Applied Physics Express Vol.3
- NAID
  10027013579
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Analysis of twin defects in GaAs nanowires and tetrahedral and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy2010
- Author(s)
  H.Yoshida, K.Ikejiri, T.Sato, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
- Journal Title
  
  Journal of Crystal Growth VOL.312
  
  Pages: 51-57
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si2010
- Author(s)
  K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Journal Title
  
  NANO LETTERS
  
  Volume: VOL.10 Pages: 1639-1644
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates2010
- Author(s)
  T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, T. Fukui
- Journal Title
  
  Appl. Phys. Express 3
  
  Pages: 25003-25003
- NAID
  10027013579
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates2010
- Author(s)
  T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, E.Sano, T.Fukui
- Journal Title
  
  Applied Physics Express VOL.3
- NAID
  10027013579
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Structural transition in indium phosphide nanowires2010
- Author(s)
  Y.Kitauchi, Y.Kobayashi, K.Tomioka, S.Hara, K.Hiruma, T.Fukui, J.Motohisa
- Journal Title
  
  NANO LETTERS
  
  Volume: VOL.10 Pages: 1699-1703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy2010
- Author(s)
  M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS
  
  Volume: VOL.49
- NAID
  210000068312
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires2010
- Author(s)
  A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: VOL.312 Pages: 3592-3598
- NAID
  120002678122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate2009
- Author(s)
  Katsuhiro Tomioka, Yasunori Kobayashi, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
- Journal Title
  
  Nanotechnology 20
  
  Pages: 145302-145302
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers2009
- Author(s)
  B.Hua, J.Motohisa, Y.Kobayashi, S.Hara, T.Fukui
- Journal Title
  
  Nano Letters Vol.9
  
  Pages: 112-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Analysis of Twin Defects in GaAs Nanowires and Tetrahedra and Their Correlation to GaAs (111)B Surface Reconstructions in Selective-Area Metal-Organic Vapor Phase Epitaxy2009
- Author(s)
  Hiroatsu Yoshida, Keitaro Ikejiri, Takuya Sato, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  J. Cryst. Growth 315
  
  Pages: 52-57
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers2009
- Author(s)
  B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
- Journal Title
  
  Nano Lett 9(1)
  
  Pages: 112-116
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Growth of Core-Shell InP nanowires for Photovoltaic Application by Selective-Area Metal-Organic Vapor-Phase Epitaxy2009
- Author(s)
  H.Goto, N.Nosaki, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
- Journal Title
  
  Applied Physics Express Vol.2
- NAID
  10025085293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Single GaAs/GaAsP coaxial core-shell nanowire lasers2009
- Author(s)
  B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
- Journal Title
  
  Nano Letters 9
  
  Pages: 112-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure2009
- Author(s)
  L.Yang, J.Motohisa, T.Fukui, L.X.Jia, L.Zhang, M.M.Geng. P.Chen, Y.L.Liu
- Journal Title
  
  Optics Express VOL.17
  
  Pages: 9337-9346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Single GaAs/GaAsP coaxial core-shell nanowaire lasers2009
- Author(s)
  B. Hua, J. Motohisa, Y. Kobayashi, S. Hara and T. Fukui
- Journal Title
  
  Nano Letters vol. 9
  
  Pages: 112-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Growth of core-shell InP nanowires for photovoltaic application by selective-area metal-organic vapor-phase epitaxy2009
- Author(s)
  H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移2009
- Author(s)
  北内悠介、本久順一、小林靖典、福井孝志
- Journal Title
  
  電子情報通信学会技術報告 ED-2008-227
  
  Pages: 19-22
- NAID
  110007131573
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate2009
- Author(s)
  K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
- Journal Title
  
  Nanotechnology 20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Transient band-bending in InP/InAs/InP core-multishell nanowires2009
- Author(s)
  K. Goto, S. Tomimoto, B. Pal, Y. Masumoto, R Mohan, J. Motohisa and T.Fukui
- Journal Title
  
  Physica Status Solidi C 6
  
  Pages: 205-208
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] One- and two-dimensional spectral diffusions in InP/InAs/InP core-multishell nanowires2009
- Author(s)
  K.Goto, M.Ikezawa, S.Tomimoto, B.Pal, Y.Masumoto, P.Mohan, J.Motohisa, T.Fukui
- Journal Title
  
  Japanese Journal of Applied Physics VOL.48
- NAID
  210000066714
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy2009
- Author(s)
  H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, T. Fukui
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 35004-35004
- NAID
  10025085293
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy2009
- Author(s)
  H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
- Journal Title
  
  Applied Physics Express vol. 2
- NAID
  10025085293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Microcavity structures in single GaAs nanowires2008
- Author(s)
  B. Hua, J. Motohisa, S. Hara, T. Fukui
- Journal Title
  
  physica status solidi (c) Vol.5
  
  Pages: 2722-2725
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires2008
- Author(s)
  B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, T. Fukui
- Journal Title
  
  Appl. Phys. Lett 93
  
  Pages: 73105-73105
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement2008
- Author(s)
  Takuya Sato, Yasunori Kobayashi, Junichi Motohisa, Shinjiro Hara, Takashi Fukui
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5111-5113
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy2008
- Author(s)
  K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara, T. Fukui
- Journal Title
  
  Nanotechnology 19
  
  Pages: 265604-265604
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement2008
- Author(s)
  T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5111-5113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価2008
- Author(s)
  登坂仁一郎, 佐藤拓也, 本久順一, 原真二郎, 福井孝志
- Journal Title
  
  電子情報通信学会技術研究報告 107
  
  Pages: 5-10
- NAID
  110006613699
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Formation of InP and InGaAs air-hole arrays on InP(111) substrates by selective-area metal-organic vapor-phase epitaxy2008
- Author(s)
  S. Hashimoto, J. Takeda, A. Tarumi, S. Hara, J. Motohisa and T. Fukui
- Journal Title
  
  Japanese journal of applied physics 47
  
  Pages: 3354-3358
- NAID
  210000064731
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Optics with single nanowires2008
- Author(s)
  V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J. G. Rivase, E. Bakkers, G. Patriarche, L. Liu, J.-C.Harmand, Y. Kobayashi and J. Motohisa
- Journal Title
  
  C.R. Physique 9
  
  Pages: 804-815
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well2008
- Author(s)
  L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui M.M. Geng, L.X. Jia, L. Zhang and Y.L. Liu
- Journal Title
  
  Nanotechnology 19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Growth characteristics of GaAs nanowires obtained by selective-area metal-organic vapour-phase epitaxy2008
- Author(s)
  K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara and T. Fukui
- Journal Title
  
  Nanotechnology 19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] MOCVD法による半導体ナノワイヤの作製とデバイス応用2008
- Author(s)
  福井孝志, 本久順一, 原真二郎, 佐藤拓也
- Journal Title
  
  真空ジャーナル 117
  
  Pages: 15-17
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires2008
- Author(s)
  B. Pal, K. Goto, Y. Mosumoto, P. Mohan, J. Motohisa and T. Fukui
- Journal Title
  
  Applied Physics Letters 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces2008
- Author(s)
  H. Iguchi, S. Hara, J. Motohisa and T. Fukui
- Journal Title
  
  Japanese journal of applied physics 47
  
  Pages: 3253-3256
- NAID
  210000064709
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy2008
- Author(s)
  Takuya Sato, Junichi Motohisa, Jinichiro Noborisaka, Shinjiro Hara, Takashi Fukui
- Journal Title
  
  J. Cryst. Growth Vol.310,No.7-9
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Control of InAs nanowire growth directions on Si2008
- Author(s)
  K. Tomioka, J. Motohisa, S. Hara and T. Fukui
- Journal Title
  
  Nano Letters 8
  
  Pages: 3475-3480
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Microcavity structures in single GaAs nanowires2008
- Author(s)
  B. Hua, J. Motohisa, S. Hara and T. Fukui
- Journal Title
  
  Physica Status Solidi C 5
  
  Pages: 2722-2725
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Spectroscopy and imaging of GaAs-InGaAs-GaAs heterostructured nanowires grown by selective-area metalorganic vapor phase epitaxy2008
- Author(s)
  M. Fukui, Y. Kobayashi, J. Motohisa and T. Fukui
- Journal Title
  
  Physica Status Solidi C 5
  
  Pages: 2743-2745
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成2008
- Author(s)
  冨岡克弘、佐藤拓也、原真二郎、本久順一、福井孝志
- Journal Title
  
  表面科学 29
  
  Pages: 726-730
- NAID
  10024407649
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Spectroscopy and Imaging of GaAs-InGaAs-GaAs Heterostructured Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy2008
- Author(s)
  M. Fukui, Y. Kobayashi, J. Motohisa, T. Fukui
- Journal Title
  
  physica status solidi (c) Vol.5
  
  Pages: 2743-2745
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Control of InAs Nanowire Growth Directions on Si2008
- Author(s)
  K. Tomioka, J. Motohisa, S. Hara, T. Fukui
- Journal Title
  
  Nano Lett 8(10)
  
  Pages: 3475-3480
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Micro-photoluminescence spectroscopy study of high quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy2008
- Author(s)
  Y. Kobayashi, M. Fukui, J. Motohisa, T. Fukui
- Journal Title
  
  Physica E Vol.40,No6
  
  Pages: 2204-2206
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
- Journal Title
  
  Japanese Journal of Applied Physics vol. 46
  
  Pages: 7562-7568
- NAID
  40015705160
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007
- Author(s)
  Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, Takashi Fukui
- Journal Title
  
  Appl. Phys. Lett 91
  
  Pages: 131112-131112
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Electrical characteristics of InGaAs nanowire-top-gate field effect transistors by selective-area metal organic vapor phase epitaxy2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
- Journal Title
  
  Japanese journal of applied physics 46
  
  Pages: 7562-7568
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007
- Author(s)
  B. Hua, J. Motohisa, Y. Ding, S. Hara, T. Fukui
- Journal Title
  
  Applied physics letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy2007
- Author(s)
  Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, Takashi Fukui
- Journal Title
  
  Nano Lett 7(12)
  
  Pages: 3598-3602
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Electrical Characterizations of InGaAs Nanowire top-gate Field-effect-Transistors by using Selective-area MOVPE2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
- Journal Title
  
  Jpn. J. Appl. Phys 46
  
  Pages: 7562-7562
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Crystallographic Structure of InAs? Nanowires Studied by Transmission Electron Microscopy2007
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
- Journal Title
  
  Jpn. J. Appl. Phys 46
- NAID
  210000063794
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Crystallographic structure of InAs nanowires studied by transmission electron microscopy2007
- Author(s)
  K. Tomioka, J. Motohisa, S. Hara, T. Fukui
- Journal Title
  
  Japanese journal of applied physics 46
- NAID
  210000063794
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Characterization of Fabry-P?rot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007
- Author(s)
  Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, and Takashi Fukui
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 13112-13112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy2007
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui
- Journal Title
  
  Japanese Journal of Applied Physics 46
- NAID
  210000063794
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Electrical Characterizations of InGaAs? Nanowire-top-gate Field-effect-Transistors by using Selective-area MOVPE", Jpn. J. Appl. Phys. 46, 7562(2007).2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 7562-7562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes2007
- Author(s)
  K. Tsumura, S. Nomura, P. Mohan, J. Motohisa, T. Fukui
- Journal Title
  
  Japanese journal of applied physics 46
- NAID
  120007138780
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy2007
- Author(s)
  Y. Ding, J. Motohisa, B. Hua, S. Hara, T. Fukui
- Journal Title
  
  Nano letters 7
  
  Pages: 3598-3602
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002003
[Journal Article] Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy2007
- Author(s)
  Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, and Takashi Fukui
- Journal Title
  
  Nano Letters 7
  
  Pages: 3598-3602
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Foramtion of III-V Compound Semiconductor Nanowire and a Crystal Structure Change between Zincblende and Wurzite (review)2007
- Author(s)
  K. Hiruma, K. Ikejiri, H. Yoshida, K. Tomioka, J. Motohisa, S. Hara, T. Fukui
- Journal Title
  
  Japanese Journal of Crystal Growth 34,No.4
  
  Pages: 224-232
- Data Source
  KAKENHI-PROJECT-19206031
[Journal Article] Photonic Crystal Slabs with Hexagonal Air Holes Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
- Journal Title
  
  Sensors and Actuators A (To be published)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)2006
- Author(s)
  Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Oyo Buturi 75
  
  Pages: 296-302
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Catalyst-free selective area MOVPE of semiconductor nanowires2006
- Author(s)
  J.Motohisa, T.Fukui
- Journal Title
  
  Proceedings of SPIE 6370
- Data Source
  KAKENHI-PROJECT-17656019
[Journal Article] 半導体ナノワイヤとナノデバイス応用2006
- Author(s)
  本久順一
- Journal Title
  
  応用物理 75・3
  
  Pages: 296-302
- NAID
  10020530831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] 半導体ナノワイヤとナノデバイス応用2006
- Author(s)
  本久順一
- Journal Title
  
  応用物理 75・3
  
  Pages: 296-302
- NAID
  10020530831
- Data Source
  KAKENHI-PROJECT-17656019
[Journal Article] Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs2005
- Author(s)
  Lin Yang, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Opt.Eng. 44
  
  Pages: 78002-78002
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays2005
- Author(s)
  Premila Mohan, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Nanotechnology 16
  
  Pages: 2903-2907
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs?(111)B substrates using flow-rate modulation mode2005
- Author(s)
  Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel, Takashi Fukui
- Journal Title
  
  Nanotechnology 16
  
  Pages: 2954-2957
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Photoluminescence from single hexagonal nano-wire grown by selective area MOVPE2005
- Author(s)
  S.Hara.J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
- Journal Title
  
  Institute of Physics Conference Series (IOP) No.184
  
  Pages: 393-398
- Data Source
  KAKENHI-PROJECT-17656100
[Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms, Their Application in Waveguides2005
- Author(s)
  L.Yang, J.Motohisa, T.Fukui
- Journal Title
  
  Jpn.J.Appl.Phys Vol.44, No.4B
  
  Pages: 2531-2536
- NAID
  10015704763
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode.2005
- Author(s)
  Junichiro Takeda
- Journal Title
  
  Nanotechnology 16
  
  Pages: 2954-2957
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE2005
- Author(s)
  S.Hara, J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
- Journal Title
  
  Inst.Phys.Conf.Ser. No 184
  
  Pages: 393-398
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005
- Author(s)
  Jinichiro Noborisaka, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Appl. Phys. Lett. 86
  
  Pages: 213102-213102
- NAID
  120000960844
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy2005
- Author(s)
  J.Noborisaka, J.Motohisa, S.Hara, T.Fukui
- Journal Title
  
  Applied Physics Letters (AIP) Vol.87, No.9
  
  Pages: 93109-93109
- Data Source
  KAKENHI-PROJECT-17656100
[Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode2005
- Author(s)
  Junichiro Takeda
- Journal Title
  
  Nanotechnology 16
  
  Pages: 2954-2957
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004
- Author(s)
  J.Motohisa
- Journal Title
  
  Physica E 3-4・23
  
  Pages: 298-304
- NAID
  120000958778
- Data Source
  KAKENHI-PROJECT-13GS0001
[Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004
- Author(s)
  J.Motohisa
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 180-185
- NAID
  120000954504
- Data Source
  KAKENHI-PROJECT-13GS0001
[Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004
- Author(s)
  Junichiro Takeda, Masaru Inari, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Journal of Crystal Growth Volume 272, 1-4
  
  Pages: 570-575
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004
- Author(s)
  J.Motohisa J.Noborisaka, J.Takeda, M.Inari, T.Fukui
- Journal Title
  
  Journal of Crystal Growth v 272, n 1-4
  
  Pages: 180-185
- NAID
  120000954504
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004
- Author(s)
  Junichiro Takeda
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 570-575
- Data Source
  KAKENHI-PROJECT-13GS0001
[Journal Article] Growth and optical properties of 2D photonic crystals based on hexagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004
- Author(s)
  Junichi Motohisa
- Journal Title
  
  Material Research Society Proceedings 797
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs(111)A substrates using selective-area MOVPE2004
- Author(s)
  Junichiro Takeda
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 570-575
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Growth of GaAs?/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004
- Author(s)
  J.Motohisa, J.Takeda, M.Inari, J.Noborisaka, T.Fukui
- Journal Title
  
  Physica E v 23, n 3-4
  
  Pages: 298-304
- NAID
  120000958778
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004
- Author(s)
  J.Motohisa
- Journal Title
  
  Physica E 3-4・23
  
  Pages: 298-304
- NAID
  120000958778
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AIGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004
- Author(s)
  J.Motohisa Takeda, M.Inari, T.Fukui
- Journal Title
  
  Mat.Res.Soc.Proc. Vol.797
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004
- Author(s)
  Junichi Motohisa
- Journal Title
  
  Physica E 3-4・23
  
  Pages: 298-304
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004
- Author(s)
  Junichiro Takeda
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 570-575
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004
- Author(s)
  J.Motohisa
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 180-185
- NAID
  120000954504
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Realization of InAs?-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy2004
- Author(s)
  Premila Mohan, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Applied Physics Letters Volume 84, Issue 14
  
  Pages: 2664-2666
- NAID
  120000956837
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004
- Author(s)
  Junichi Motohisa
- Journal Title
  
  Journal of Crystal Growth 1-4・272
  
  Pages: 180-185
- NAID
  120000954504
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals2004
- Author(s)
  M.Inari, J.Takeda, J.Motohisa, T.Fukui
- Journal Title
  
  Physica E Vol.21, No.2-4
  
  Pages: 620-624
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application2003
- Author(s)
  M.Akabori, J.Takeda, J.Motohisa, T.Fukui
- Journal Title
  
  Nanotechnology Vol.14, No.10
  
  Pages: 1071-1074
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Single-electron AND/NAND logic circuits based on a self-organized dot network2003
- Author(s)
  F.Nakajima, Y.Miyoshi, J.Motohisa, T.Fukui
- Journal Title
  
  Appl.Phys.Lett. Vol.83, No.13
  
  Pages: 2680-2682
- NAID
  120000953010
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy2003
- Author(s)
  P.Mohan, F.Nakajima, M.Akabori, J.Motohisa, T.Fukui
- Journal Title
  
  Appl.Phys.Lett. Vol.83, No.4
  
  Pages: 689-691
- NAID
  120000952950
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes : selective area metal organic vapor phase epitaxy
- Author(s)
  Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
- Journal Title
  
  Optics Express Vol.13, No.26
  
  Pages: 10823-10832
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206030
[Patent] 半導体装置及び半導体装置の製造法2010
- Inventor(s)
  冨岡克広、福井孝志、本久順一、原真二郎
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Number
  2010-040019
- Filing Date
  2010-02-25
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] ナノワイヤ太陽電池及びその製造方法2009
- Inventor(s)
  後藤肇、福井孝志、本久順一、比留間健之
- Industrial Property Rights Holder
  本田技研工業(株)、北海道大学
- Industrial Property Number
  2009-295806
- Filing Date
  2009-12-25
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 太陽電池、カラーセンサ、ならびに発光素子および受光素子の製造方法2009
- Inventor(s)
  比留間健之、本久順一、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Number
  2009-272140
- Filing Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 多接合太陽電池の製造方法2008
- Inventor(s)
  後藤肇、本久順一、福井孝志
- Industrial Property Rights Holder
  (株)本田技術研究所、北海道大学
- Filing Date
  2008-09-03
- Overseas
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 半導体発光素子アレー、およびその製造方法2008
- Inventor(s)
  比留間健之、原真二郎、本久順一、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Filing Date
  2008-10-17
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 半導体構造物の製造方法2008
- Inventor(s)
  冨岡克弘、福井孝志、本久順一、原真二郎
- Industrial Property Rights Holder
  北海道大学
- Filing Date
  2008-09-01
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] ナノワイヤ太陽電池の構造と作製方法2008
- Inventor(s)
  後藤肇、大橋智昭、本久順一、福井孝志
- Industrial Property Rights Holder
  (株)本田技術研究所、北海道大学
- Filing Date
  2008-07-16
- Overseas
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 半導体発光素子アレー、およびその製造方法2008
- Inventor(s)
  比留間健之、原真二郎、本久順一、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Filing Date
  2008-10-17
- Overseas
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 半導体発光素子アレー、およびその製造方法2008
- Inventor(s)
  比留間健之、原真二郎、本久順一、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Filing Date
  2008-10-17
- Overseas
- Data Source
  KAKENHI-PROJECT-18002003
[Patent] 半導体発光素子アレー、およびその製造方法2007
- Inventor(s)
  比留間健之・福井孝志・本久順一・原真二郎
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Number
  2007-214119
- Filing Date
  2007-08-20
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Photo-assisted electrochemical etching of GaN for nanostructure fabrication2021
- Author(s)
  Michihito Shimauchi, Kazuki Miwa, Masachika Toguchi, Taketomo Sato, Junichi Motohisa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] InPナノワイヤの接合構造と発光ダイオード特性の関係2021
- Author(s)
  木村峻、勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021
- Author(s)
  小原康，冨岡克広，原真二郎，本久順一
- Organizer
  第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021
- Author(s)
  小原康，冨岡克弘，原真二郎，本久順一
- Organizer
  第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] （招待講演） InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一、福井孝志
- Organizer
  2020年度電子情報通信学会シリコン材料・デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Si上のInAs/GaSbコアシェルナノワイヤ縦型サラウンディングゲートトランジスタの試作2021
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤ縦型トンネルFETの作製2020
- Author(s)
  勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020
- Author(s)
  Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui
- Organizer
  66th International Electron Devices Meeting (IEDM 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] Selective-area growth of InGaAs/GaSb core-shell nanowires on Si2020
- Author(s)
  Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Selective-Area Growth of AlInAs Nanowires2020
- Author(s)
  Y. Tai, J. Motohisa, K. Tomioka
- Organizer
  Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 電気めっき法によるGaNへのPt電極の形成と電気特性評価2020
- Author(s)
  小原康、島内道人、佐藤威友、本久順一
- Organizer
  第５５回応用物理学会北海道支部/第１６回日本光学会北海道支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Organizer
  The 20th International Meeting on Information Display (IMID 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長と電気特性2020
- Author(s)
  蒲生浩憲、陳 栎安、勝見悠、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020
- Author(s)
  田井良樹、赤松知弥、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Fabrication of GaN nanowires by wet etching using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019
- Author(s)
  Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
- Organizer
  32nd International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] RF-MBEにより選択成長したGaNナノワイヤの電気特性評価2019
- Author(s)
  山本侑也、島内道人、本久順一
- Organizer
  第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Hiroki Kameda, Katsuhiro Tomioka, and Junichi Motohisa
- Organizer
  Nanowire Weak 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019
- Author(s)
  H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019
- Author(s)
  Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Demonstration of InAs nanowire vertical transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] アニールによるInPナノワイヤ直径微細化2019
- Author(s)
  佐々木正尋、冨岡克広、本久順一
- Organizer
  第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] GaNの選択的光電気化学エッチング2019
- Author(s)
  島内道人、三輪和希、渡久地政周、佐藤威友、本久順一
- Organizer
  応用物理学会界面ナノ電子化学研究会
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019
- Author(s)
  Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019
- Author(s)
  T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Fabrication of GaN nanowires by wet etching using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019
- Author(s)
  Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
- Organizer
  電子材料シンポジウム
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019
- Author(s)
  K. Tomioka, H. Gamo, J. Motohisa
- Organizer
  236th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] コンタクトレス光電気化学エッチング及びウェットエッチングによる窒化ガリウムナノワイヤの作製2019
- Author(s)
  島内道人、三輪和希、渡久地政周、佐藤威友、本久順一
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019
- Author(s)
  Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K.Tomioka
- Organizer
  32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Fabrication of GaN nanowires by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019
- Author(s)
  Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
- Organizer
  The 9-th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04528
[Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019
- Author(s)
  蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019
- Author(s)
  Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2019 International Workshop on Physics of Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] 光電気化学エッチングによる窒化ガリウムの微細加工の検討2019
- Author(s)
  島内道人、三輪和希、渡久地政周、佐藤威友、本久順一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019
- Author(s)
  K. Tomioka, J. Motohisa
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019
- Author(s)
  赤松知弥, 佐々木正尋, 冨岡克広, 本久順一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  The 37th Electronic Materials Symposium (EMS 37)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Electroluminescence from InP-based Heterostructure Nanowires2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018
- Author(s)
  佐々木正尋、千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Study on emission mechanism in InP-based nanowire LEDs2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Nanowire Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Electrical characterization of selectively grown GaN nanowires2018
- Author(s)
  Y. Yamamoto, M. Shimauchi, J. Motohisa
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  The 37th Electronic Materials Symposium (EMS 37)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Study on Emission Mechanisms in InP-based Nanowire LEDs2018
- Author(s)
  Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
- Organizer
  Nanowire Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018
- Author(s)
  M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InPナノワイヤLEDの温度依存性評価2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018
- Author(s)
  Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017
- Author(s)
  K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] InAsP 埋め込み InP ナノワイヤにおける発光波長制御2017
- Author(s)
  佐々木正尋、千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第9回　ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017
- Author(s)
  K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017
- Author(s)
  H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
- Organizer
  22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Photoluminescence of Zn-Doped InP Nanowires: Mixing of Crystal Structures, Donor-Acceptor Pair Recombination, and Surface Effects2017
- Author(s)
  Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, Shinjiro Hara, Katsuhiro Tomioka
- Organizer
  the 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Japan, July 31-August 4, 2017, TuP-33
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02727
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017
- Author(s)
  [8].千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Nanowire quantum dots emitting at telecom wavelength2017
- Author(s)
  M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  The 24th Congress of the International Commission for Optics (ICO-24)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] 縦型ナノワイヤFETに向けたGaNナノワイヤ成長条件の検討2017
- Author(s)
  山本侑也、環尚杜、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017
- Author(s)
  千葉康平、吉田旭伸、冨岡克広、本久順一：
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Vertical InGaAs nanowire photodiode array on Si2017
- Author(s)
  K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  MRS fall meeting 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017
- Author(s)
  K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
- Organizer
  30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] 縦型ナノワイヤFETに向けたGaNナノワイヤ形成条件の検討2017
- Author(s)
  山本侑也、環尚人、本久順一
- Organizer
  第9回　ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] Dependence on growth conditions in selective-area growth of GaN nanowires using RF-plasma-assisted molecular beam epitaxy2017
- Author(s)
  Y. Yamamoto, N. Tamaki, A. Sonoda, and J. Motohisa
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05323
[Presentation] Si基板上InGaAsナノワイヤの組成制御2016
- Author(s)
  千葉康平、冨岡克広、石坂文哉、吉田旭伸、本久順一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016
- Author(s)
  K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
- Organizer
  PRiME 2016, 230th Meeting of The Electrochemical Society (ECS 230)
- Place of Presentation
  Honolulu
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016
- Author(s)
  K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016
- Author(s)
  Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa
- Organizer
  The 35th Electronic Materials Symposium (EMS 35)
- Place of Presentation
  Moriyama
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] 横方向成長させたGaAsナノワイヤの評価2013
- Author(s)
  和田年弘、小橋義典、原真二郎、本久順一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学(京都府京田辺市)
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] Selective area growth of GaN by RF-plasma assisted Molecular Beam Epitaxy2013
- Author(s)
  A. Onodera, A. Yamamoto, and J. Motohisa
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  米国ハワイ州カウアイシェラトンカウアイリゾート
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] Study on the lateral growth on GaAs Nanowires2013
- Author(s)
  T. Wada, Y. Kohashi, S. Hara and J. Motohisa
- Organizer
  第32回電子材料シンポジウム
- Place of Presentation
  滋賀県守山市ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] A New Growth Mode of InP Nanowires in Selective-Area Metal-Organic Vapor-Phase Epitaxy2013
- Author(s)
  S. Yanase, Y. Kohashi, S. Hara, and J. Motohisa
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  米国ハワイ州カウアイシェラトンカウアイリゾート
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] Selective area growth of GaN by RF-plasma assisted molecular beam epitaxy2013
- Author(s)
  A. Onodera, A. Yamamoto, and J. Motohisa
- Organizer
  International Symposium on Advanced Nanodevice and Nanotechnology
- Place of Presentation
  Kauai, Hawai, US.
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] RF-MBE法によるGaN及びInGaNの成長と評価2013
- Author(s)
  山本礼奈, 小野寺彩, 本久順一
- Organizer
  第48回応用物理学会北海道支部/第9回日本光学会北海道地区合同学術講演会
- Place of Presentation
  釧路市生涯学習センター(釧路市)
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] RF-MBE法によるGaN及びInGaNの成長と評価2013
- Author(s)
  山本礼奈、小野寺彩、本久順一
- Organizer
  第４８回応用物理学会北海道支部／第９回日本光学会北海道地区合同学術講演会
- Place of Presentation
  釧路市生涯学習センター(釧路市)
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] RF-MBE法によるGaNの選択成長2012
- Author(s)
  小野寺彩、山本礼奈、本久順一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学(松山市)
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] Selective-area growth and optical properties of InP-based nanowires2012
- Author(s)
  J. Motohisa
- Organizer
  Nanowires 2012
- Place of Presentation
  Paul Drued Institute (Germany)(invited)
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] RF-MBE法によるGaNの選択成長2012
- Author(s)
  小野寺彩, 山本礼奈, 本久順一
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京)
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] RF-MBE法によるGaNの選択成長2012
- Author(s)
  小野寺彩, 山本礼奈, 本久順一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学(松山市)
- Data Source
  KAKENHI-PROJECT-24656196
[Presentation] Selective-Area MOVPE Growth of InP-Based Nanowires and Their Optical Properties2012
- Author(s)
  J. Motohisa
- Organizer
  24th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  University of California, Santa Barbara (USA)(invited)
- Year and Date
  2012-08-30
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] Far-Field Emission Patterns in InP Nanowire LEDs2012
- Author(s)
  J. Motohisa
- Organizer
  31st International Conference on Physics of Semiconductors
- Place of Presentation
  Swiss Federal Institute of Technology Zurich (ETH)(Switzerland)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] GaAs and related III-V nanowires formed by using selective-area metal-organic vapor-phase epitaxy and their applications to optoelectronics2011
- Author(s)
  K.Hiruma, S.Fujisawa, K.Ikejiri, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
- Organizer
  473rd Wilhelm and Else Heraeus Seminar on III-V Nanowires : Growth, Properties, and Applications
- Place of Presentation
  Physikzentrum, Bad Honnef, Germany(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Selective-area growth of InGaAs nanowires on Si2010
- Author(s)
  K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
- Place of Presentation
  Hyatt Regency, Lake Tahoe, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] InAs系ナノワイヤトランジスタ(招待講演)2010
- Author(s)
  本久順一
- Organizer
  電子情報通信学会2010年総合大会
- Place of Presentation
  仙台市
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  2010 Conference on Optoelectronic and Microelectronic Materials and Devices
- Place of Presentation
  The Australian National University, Canberra, Australia(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth mechanism of III-V semiconductor nanowires in selectve-area metalorganic vapor phase epitaxy2010
- Author(s)
  J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy2010
- Author(s)
  S.Fujisawa, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  University of Tokyo, Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with re-growth method2010
- Author(s)
  K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Conference on InP and Related Materials/International Conference on Compound Semiconductors
- Place of Presentation
  Takamatsu Symbol Tower, Takamatsu, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor nanowire formation using catalyst-free MOVPE and applications to optoelectronic devices2010
- Author(s)
  K.Hiruma, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
- Organizer
  The 12th Nanowire Research Society Meeting & Nano Korea 2010 Satellite Session
- Place of Presentation
  KINTEX, Goyang, Korea(招待講演)
- Year and Date
  2010-08-20
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  Material Research Society 2010 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor core-shell nanowires grown by selective area MOVPE and their device applications2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  Material Research Society (MRS) 2010 Spring Meeting
- Place of Presentation
  Moscone West and Marriott Hotel, San Francisco, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V Semiconductor Nanowires-from Crystal Growth to Device Applications2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
- Place of Presentation
  Hyatt Regency, Lake Tahoe, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Integration of III-V NW-based vertical FETs on Si and device concept for tunnel FET using III-V/Si heterojunctions2010
- Author(s)
  K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Tanaka, T.Fukui
- Organizer
  Material Research Society (MRS) 2010 Fall Meeting
- Place of Presentation
  Hynes Convention Center and Sheraton Hotel, Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Electrical characterization of InGaAs nanowire MISFETs fabricated by dielectric-first process2010
- Author(s)
  Y.Kohashi, T.Sato, K.Tomioka, S.Hara, T.Fukui, J.Motohisa
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  University of Tokyo, Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(Invited)2010
- Author(s)
  J.Motohisa, B.Hua, K.S.K.Varadwaj, S.Hara, K.Hiruma, T.Fukui
- Organizer
  IEEE photonics society winter topical 2010
- Place of Presentation
  Majorca, Spain
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and characterization of core-multishell GaAs nanowire array solar cell2010
- Author(s)
  S.Soundeswaran, K.Tomioka, T.Sato, M.Yoshimura, T.Sato, J.Motohisa, K.Hiruma, T.Fukui
- Organizer
  International Conference on Nanomaterials
- Place of Presentation
  Mahatma Gandhi University, Kottayam, Kerala, India
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication and characterization of InAs tubular channel FETs using core-shell nanowires grown by SA-MOVPE2010
- Author(s)
  T.Sato, J.Motohisa, E.Sano, S.Hara, T.Fukui
- Organizer
  International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
- Place of Presentation
  Hyatt Regency, Lake Tahoe, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth mechanism of III-V semiconductor nanowires in selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Beijing International Convention Center, Beijing, China(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting-diode array on Si substrate2010
- Author(s)
  K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
- Organizer
  SPIE Infrared Remote Sensing and Instrumentation XVIII
- Place of Presentation
  San Diego Convention Center, San Diego, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE (invited)2010
- Author(s)
  J. Motohisa, B. Hua, K.S.K. Varadwaj, S. Hara, K. Hiruma, T. Fukui
- Organizer
  Winter Topicals 2010
- Place of Presentation
  Majorca, Spain
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Selective-area growth of InGaAs nanowires on Si(111) substrate2010
- Author(s)
  K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  Material Research Society (MRS) 2010 Fall Meeting
- Place of Presentation
  Hynes Convention Center and Sheraton Hotel, Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor nanowires and core-shell nanowires and their device applications2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  International Conference on Superlattices, Nanostructures and Nanodevices
- Place of Presentation
  Beijing International Convention Center, Beijing, China(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of GaN nanorods on Si(111) by rf-assisted molecular beam epitaxy2010
- Author(s)
  N.Isomura, T.Hashizume, J.Motohisa
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Humboldt-Universitat zu Berlin, Berlin, Germany
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(invi9ted)2010
- Author(s)
  J.Motohisa, et al.
- Organizer
  Winter Topicals 2010
- Place of Presentation
  Majorca, Spain
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication of III-V Semiconductor Nanowires by SA-MOVPE and their Applications to Photonic and Photovoltaic Devices2010
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  International Conference on InP and Related Materials/International Conference on Compound Semiconductors
- Place of Presentation
  Takamatsu Symbol Tower, Takamatsu, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device applications(Invited)2010
- Author(s)
  S.Hara, J.Motohisa, K.Tomioka, K.Hiruma, T.Fukui
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] GaAs/AlGaAs heterostructure nanowires with a GaAs quantum well formed by selective-area metal organic vapor-phase epitaxy2010
- Author(s)
  K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
- Organizer
  5th Nanowire Growth Workshop 2010
- Place of Presentation
  CNR Building, Rome, Italy
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a GaAs Quantum Well Formed by Selective-Area Metal Organic Vapor-Phase Epitaxy2010
- Author(s)
  K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
- Organizer
  International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Heteroepitaxial growth of InGaAs Nanowires formed on GaAs(111)B by Selective-Area MOVPE2010
- Author(s)
  M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
- Organizer
  International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
- Place of Presentation
  Hyatt Regency, Lake Tahoe, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs2010
- Author(s)
  Y.Kobayashi, J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Conference on InP and Related Materials/International Conference on Compound Semiconductors
- Place of Presentation
  Takamatsu Symbol Tower, Takamatsu, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 有機金属気相成長法によるGaAs上へのGaSb選択成長2010
- Author(s)
  高山雄大, 冨岡克広, 福井孝志, 本久順一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InPナノワイヤを用いたInAs-チューブチャネルFETの作製と評価2010
- Author(s)
  佐藤拓也, 本久順一, 原真二郎, 佐野栄一, 福井孝志
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InAs系ナノワイヤトランジスタ2010
- Author(s)
  本久順一, 田中智隆, 冨岡克弘, 福井孝志
- Organizer
  電子情報通信学会2010年総合大会
- Place of Presentation
  仙台市
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] 熱ナノインプリントを利用したMOVPE選択成長2010
- Author(s)
  井上理樹, 佐藤拓也, 池辺将之, 原真二郎, 福井孝志, 本久順一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V Semiconductor Nanowires Grown and Their Device Applications(Invited)2009
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
- Place of Presentation
  Ulm, Germany
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of III-V nanowires by selective-area MOVPE and their applications (invited)2009
- Author(s)
  J. Motohisa
- Organizer
  2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009)
- Place of Presentation
  Anan, Tokushima, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication and electrical characterization of InAs tubular channel nanowire FETs2009
- Author(s)
  T.Sato, J.Motohisa, S.Hara, E.Sano, T.Fukui
- Organizer
  International Symposium on Advanced Nanostructures and Nano-Devices
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications (invited)2009
- Author(s)
  J. Motohisa, S. Hara, K. Hiruma, T. Fukui
- Organizer
  The XV International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Analysis of the twin defects occurring in GaAs nanowires grown by selective-area metal-organic Vapor phase epitaxy2009
- Author(s)
  H. Yoshida, T. Sato, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
- Organizer
  The 5th International Symposium on Surface Science and Nanotechnology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(invited)2009
- Author(s)
  J.Motohisa, et al.
- Organizer
  The XV International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InAs Nanowire Vertical Surrounding Gate FET on Si Substrate2009
- Author(s)
  T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
- Organizer
  2009 International Conference on Solid State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Position controlled growth and optical properties of III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2009
- Author(s)
  J. Motohisa, K. Tomioka, S. Hara, K. Hiruma and T. Fukui
- Organizer
  The SPIE Photonics West Conferences 2009
- Place of Presentation
  San Jose, California, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009
- Author(s)
  K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  The 2009 Material Research Society(MRS)Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of III-V nanowires by selective-area MOVPE and their applications(invited)2009
- Author(s)
  J.Motohisa
- Organizer
  2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Na nostructures(SemiconNano 2009)
- Place of Presentation
  Anan, Tokushima, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(Invited)2009
- Author(s)
  J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  The XV International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] MOVPE選択成長法によるInAsナノワイヤの2端子I-V測定とそのFET応用の検討2009
- Author(s)
  田中智隆, 冨岡克広, 本久順一, 原真二郎, 福井孝志
- Organizer
  第44回応用物理学会北海道支部/第5回日本光学会北海道地区合同学術講演会
- Place of Presentation
  函館
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Growth of p/n-doped GaAs-AlGaAs Core-multi-shell Nanowire Array on Si(111)by Selective-area MOVPE2009
- Author(s)
  K.Tomioka, Y.Kobayashi, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  The 2009 Material Research Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires grown on Si substrates2009
- Author(s)
  T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
- Organizer
  The 2009 Material Research Society(MRS)Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of tubular InAs nanowires for FET applications2009
- Author(s)
  T.Sato, J.Motohisa, S.Haza, E.Sano, K.Hiruma, T.Fukui
- Organizer
  4th Nanowire Growth Workshop
- Place of Presentation
  Paris, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and Application of Semiconductor Nanowires(invited)2009
- Author(s)
  J.Motohisa
- Organizer
  International Conference on Nanoscience and Technology, China 2009(ChinaNANO 2009)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V semiconductor nanowires : From growth to device applications(Invited)2009
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  International Microprocesses and Nanoteclmology Conference(MNC2009)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and Application of Semiconductor Nanowires2009
- Author(s)
  J. Motohisa
- Organizer
  International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Analysis of twin development during selective growth of GaAs nanowires by using catalyst-free metal organic vapor-phase epitaxy2009
- Author(s)
  K.Hiruma, H.Yoshida, K.Ikejiri, T.Sato, S.Hara, J.Motohisa, T.Fukui
- Organizer
  4th Nanowire Growth Workshop
- Place of Presentation
  Paris, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Near-infrared Iasing in GaAs/GaAsP coaxial core-shell nanowires(invited)2009
- Author(s)
  J.Motohisa, et al.
- Organizer
  International Workshop on Photons and Spins in Nanostructures(IWPSN)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] 半導体ナノワイヤのデバイス応用(招待講演)2009
- Author(s)
  本久順一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Structural Transition of InP Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy2009
- Author(s)
  Y.Kitauchi, J.Motohisa, K.Tomioka, Y.Kobayashi, T.Fukui
- Organizer
  The 2009 Material Research Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 半導体ナノワイヤのデバイス応用2009
- Author(s)
  本久順一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication and Electrical Characterization of InAs Tubular Channel Nanowire FETs2009
- Author(s)
  T, Sato, J. Motohisa, S. Hara, E. Sano, T. Fukui
- Organizer
  the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009)
- Place of Presentation
  Kaanapali, Maui, Hawaii, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires on Si Substrates2009
- Author(s)
  T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, T. Fukui
- Organizer
  the 2009 Material Research Society (MRS) Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] 有機金属気相選択成長法による半導体ナノワイヤの成長とその成長機構(招待講演)2009
- Author(s)
  比留間健之, 原真二郎, 本久順一, 福井孝志
- Organizer
  化学工学会第40回秋季大会(SCEJ)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Heterepitaxy of III-V nanowires on Si and optical application2009
- Author(s)
  K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  Intemational Workshop on Photons and Spins in Nanostructures(IWPSN)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Position Controlled Growth and Optical Properties of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications (invited)2009
- Author(s)
  J. Motohisa, et.al.
- Organizer
  the SPIE Photonics West Conferences 2009
- Place of Presentation
  San Jose, California, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Growth of III-V nanowires by selecdve-area MOVPE and their applications(Invited)2009
- Author(s)
  J.Motohisa
- Organizer
  2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures(SemiconNano 2009)
- Place of Presentation
  Anan, Tokushima, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Near-infrared lasing in GaAs/GaAsP coaxial core-shell nanowires (invited)2009
- Author(s)
  J. Motohisa, Hua, Y. Kobayashi
- Organizer
  International Workshop on Photons and Spins in Nanostructures (IWPSN)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] シリコン基板上のInAsナノワイヤ縦型サラウンディングゲートFETの作製2009
- Author(s)
  田中智隆, 冨岡克広, 本久順一, 原真二郎, 福井孝志
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Structural transition of InP nanowires in selective-area metalorganic vapor phase epitaxy2009
- Author(s)
  Y.Kitauchi, K.Tomioka, Y.Kobayashi, S.Hara, T.Fukui, J.Motohisa
- Organizer
  the 14th International Conference on Modulated Semiconductor Structures(MSS-14)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111)substrate2009
- Author(s)
  K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  The 3rd International Conference on One-dimensional Nanomaterials
- Place of Presentation
  Atlanta, U.S.A.
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 熱ナノインプリントを利用した微細加工に関する検討2009
- Author(s)
  井上理樹、佐藤拓也、池辺将之、福井孝志、本久順一
- Organizer
  第44回応用物理学会北海道支部/第5回日本光学会北海道地区合同学術講演会
- Place of Presentation
  函館
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009
- Author(s)
  K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
- Organizer
  International Microprocesses and Nanotechnology Conference(MNC2009)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates2009
- Author(s)
  T. Tanaka, K. Tomioka, J. Motohisa, S. Hara, T. Fukui
- Organizer
  the 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Position Controlled Growth of III-V Semiconductor Core-shell Nanowires Grown by Selective Area MOVPE and Their Device Applications(Invited)2009
- Author(s)
  T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
- Organizer
  The 2009 Material Reseach Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs core-shell Nanowires2009
- Author(s)
  S.K.Vazadwaj, J.Motohisa, S.Soundeswaran, T.Sato, B.Hua, M.van Kouwen, V.Zwiller, S.Haza, T.Fukui
- Organizer
  The 3rd International Conference on One-dimensional Nanomaterials
- Place of Presentation
  Atlanta, U.S.A.
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of Axial Heterostructures in III-V Nanowires by Selective-area MOVPE with Regrowth Method2009
- Author(s)
  K.Tomioka, Y.Kobayashi, J.Motohisa, S.Hara, T.Fukui
- Organizer
  The 2009 Material Research Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Study on InAs Tubular Channel Nanowire FETs2009
- Author(s)
  T. Sato, J. Motohisa, S. Hara, E. Sano, T. Fukui
- Organizer
  The 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009)
- Place of Presentation
  Atlanta, Georgia, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selecrive-Area MOVPE2009
- Author(s)
  M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
- Organizer
  2009 International Conference on Solid State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication of a GaAs quantum well embedded in AlGaAs/GaAs hetero-structure nanowires by selective-area MOVPE2009
- Author(s)
  A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
- Organizer
  4th Nanowire Growth Workshop
- Place of Presentation
  Paris, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Near-infrared lasing in GaAs/GaAsP coaxial core-shell nanowires(Invited)2009
- Author(s)
  J.Motohisa, B.Hua, Y.Kobayashi
- Organizer
  International Workshop on Photons and Spins in Nanostructures(IWPSN)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and Application of Semiconductor Nanowires(Invited)2009
- Author(s)
  J.Motohisa
- Organizer
  International Conference on Nanoscience and Technology, China 2009(ChinaNANO 2009)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Position-controlled growth of GaAs nanowires on Si(111) by selective-area metal-organic vapor phase epitaxy2008
- Author(s)
  K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
- Organizer
  The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] MOVPE選択成長法によるSi基板上のInAsナノワイヤ成長2008
- Author(s)
  冨岡克広, 本久順一, 原真二郎, 福井孝志
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Selective-Area MOVPE Growth of InGaAs Nanowires and Their Photoluminescence Characterization2008
- Author(s)
  T. Sato, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui
- Organizer
  the 27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V semiconductor epitaxial nanowires and their applications2008
- Author(s)
  T. Fukui, S. Hara, K. Hiruma and J. Motohisa
- Organizer
  The 16 th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Vertical III-V nanowire growth on Si substrate by selective-area MOVPE2008
- Author(s)
  K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
- Organizer
  2008 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Near-Infrared lasers in GaAs/GaAsP coaxial core-shell nanowires2008
- Author(s)
  B. Hua, J. Motohisa, S. Hara and T. Fukui
- Organizer
  2008 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Selective-area MOVPE of InP/InGaAs air-hole arrays on InP for photonic crystal applications2008
- Author(s)
  J. Motohisa, S. Hashimoto, J. Takeda, A. Tarumi, S. Hara and T. Fukui
- Organizer
  The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 有機金属気相選択成長による半導体ナノワイヤの形成(招待講演)、2008
- Author(s)
  本久順一
- Organizer
  第38回結晶成長国内会議(NCCG-38)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長法によるInPナノワイヤ中のInAsP量子ドットの作製とその光学評価2008
- Author(s)
  小林靖典, Maarten Kouwen, 福井孝志, Valery Zwiller, 本久順一
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長したInAsナノワイヤの縦型二端子測定2008
- Author(s)
  田中智隆, 冨岡克広, 北内悠介, 本久順一, 原真二郎, 福井孝志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長法による縦方向ヘテロ接合ナノワイヤの成長条件検討2008
- Author(s)
  林田淳, 吉田浩惇, 佐藤拓也, 本久順一, 原真二郎, 福井孝志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Catalyst-Free Growth and FET Application of (InGa)As Nanowires2008
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara, T. Fukui
- Organizer
  the 66th Device Research Conference (DRC 2008)
- Place of Presentation
  Santa Barbara, California, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InPナノワイヤを用いた横型FETの作製2008
- Author(s)
  北内悠介、本久順一、登坂仁一郎、福井孝志
- Organizer
  応用物理学会北海道支部講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Epitaxial III-V semiconductors : nanowires and nanotubes2008
- Author(s)
  T. Fukui, S. Hara and J. Motohisa
- Organizer
  The 4th Asian Confrence on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth and Optical Properties of InP/InAs Multi-Core Shell Nanowires Grown by Selective-Area MOVPE2008
- Author(s)
  T. Fukui, S. Hara, J. Motohisa
- Organizer
  2008 Material Research Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco,USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth mechanism of GaAs nanowires using catalyst-free selective-area metal-organic vapor phase epitaxy2008
- Author(s)
  K. Hiruma, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
- Organizer
  2008 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 有機金属気相選択成長法による半導体ナノワイヤの成長とその成長機構2008
- Author(s)
  比留間健之, 原真二郎, 本久順一, 福井孝志
- Organizer
  化学工学会第40回秋季大会(SCEJ)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] 化合物半導体ナノワイヤとデバイス応用2008
- Author(s)
  本久順一, 原真二郎, 比留間健之, 福井孝志
- Organizer
  日本真空協会スパッタリングおよびプラズマプロセス技術部会第109回定例会
- Place of Presentation
  東京
- Year and Date
  2008-07-24
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Selective-area growth of InGaAs nanowires and their photoluminescence characterization2008
- Author(s)
  T. Sato, Y. Kobayashi, J. Motohisa and T. Fukui
- Organizer
  The 27 th Electronic Materials Symposium
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] 有機金属気相選択成長による半導体ナノワイヤの形成2008
- Author(s)
  本久順一
- Organizer
  第38回結晶成長国内会議(NCCG-38)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] 化合物半導体ナノワイヤとデバイス応用(招待講演)2008
- Author(s)
  本久順一, 真二郎, 比留間健之, 福井孝志
- Organizer
  日本真空協会スパッタリングおよびプラズマプロセス技術部会第109回定例会
- Place of Presentation
  東京
- Year and Date
  2008-07-24
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Catalyst-free growth and FET application of (InGa)As nanowires2008
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara and T. Fukui
- Organizer
  The 66th Device Research Conference
- Place of Presentation
  Santa Barbara, California, USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of III-V Semiconductor Nanowires2008
- Author(s)
  T. Fukui, S. Hara and J. Motohisa
- Organizer
  The 29th International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Fabrication and Optical Characterization of InGaAs Nanowires by Selective-Area MOVPE2008
- Author(s)
  T. Sato, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui
- Organizer
  the 14th International Conference on Metal-Organic Vapor Phase Epitxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長法によるInGaAsナノワイヤの作製及び顕微PL測定による組成の評価2008
- Author(s)
  佐藤拓也, 小林靖典, 本久順一, 原真二郎, 福井孝志
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Fabrication and optical characterization of InGaAs nanowires by selective-area MOVPE2008
- Author(s)
  T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
- Organizer
  The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of III-V semiconductor nanowires2008
- Author(s)
  T. Fukui, S. Hara and J. Motohisa
- Organizer
  The 29th International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] MOVPE選択成長法によるSi基板上のGaAs/AlGaAsコア・シェルナノワイヤの作製2008
- Author(s)
  冨岡克広, 小林靖典, 本久順一, 原真二郎, 福井孝志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Competitive growth process of tetrahedrons and hexagons during nanowire formation by metal-organic vapor phase epitaxy2008
- Author(s)
  K. Hiruma, K. Ikejiri, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
- Organizer
  The third International Workshop on Nanowire Growth Mechanisms
- Place of Presentation
  Duisburg, Germany
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy2007
- Author(s)
  J. Motohisa, S. Hara, T. Fukui
- Organizer
  2007 Virtual Conference on Nanoscale Science and Technology
- Place of Presentation
  Fayetteville, Arkansas, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Formation and characterization of Fabry-Perot cavities in single GaAs nanowires2007
- Author(s)
  B. Hua, J. motohisa, S. hara, T. Fukui
- Organizer
  The 34th international conference on compound semiconductors
- Place of Presentation
  Kyoto,Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V Semiconductor Nanowires and Their Device Applications, (Invited Paper)2007
- Author(s)
  S. Hara, J. Motohisa, T. Fukui
- Organizer
  2007 International Symposium on Advanced Silicon-Based Nano-Devices (ISASN 2007)
- Place of Presentation
  Tokyo
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InP and InP/InAs multi-core shell nanowires grown by selective area MOVPE2007
- Author(s)
  T. Fukui, Premila. Mohan, J. Motohisa
- Organizer
  International Conference on Modulated Semiconductor Structures
- Place of Presentation
  Genova,Italy
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy2007
- Author(s)
  J. Motohisa, T. Fukui, and S. Hara
- Organizer
  Internationl Conference on Nano Science and Technology (ICN+T 2007)
- Place of Presentation
  Stockholm
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy2007
- Author(s)
  T. Fukui, P. Mohan, J. Motohisa
- Organizer
  19th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Matsue,Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V compound semiconductor nanowires grown by selective area MOVPE2007
- Author(s)
  T. Fukui, S. Hara, J. Motohisa
- Organizer
  2nd International Lund Workshop on Nanowire Growth Mechanisms
- Place of Presentation
  Lund,Sweden
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] (InGa)As Nanowire Field Effect Transistors2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
- Organizer
  the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007)
- Place of Presentation
  Waikoloa, Hawaii, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] Growth Characteristics of III-V Semiconductor Nanowires2007
- Author(s)
  K. Hiruma, S. Hara, J. Motohisa, Takasi Fukui
- Organizer
  The Second International Conference on One-dimensional Nanomaterials(ICON 2007)
- Place of Presentation
  Malmo,Sweden
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] (InGa) As Nanowire Field Effect Transistors2007
- Author(s)
  J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
- Organizer
  the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007)
- Place of Presentation
  Waikoloa, Hawaii, USA
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V semiconductor nanowires and nanotubes grown by slective area metalorganic vapor phase epitaxy2007
- Author(s)
  J. Motohisa, T. Fukui, S. Hara
- Organizer
  Internationl Conference on Nano Science and Technology(ICN+T 2007)
- Place of Presentation
  Stockholm,Sweden
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy2007
- Author(s)
  J. Motohisa, T. Fukui, S. Hara
- Organizer
  Internationl Conference on Nano Science and Technology (ICN+T 2007)
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V Semiconductor Nanowires and Their Device Applications2007
- Author(s)
  S. Hara, J. Motohisa, T.Fukui
- Organizer
  The 2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
- Place of Presentation
  Tokyo,Japan
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] III-V Semiconductor Nanowires and Their Device Applicationsモ,(Invited Paper)2007
- Author(s)
  S. Hara, J. Motohisa and T. Fukui
- Organizer
  2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
- Place of Presentation
  Tokyo
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] III-V semiconductor hetero-structure nanowires by selective area MOVPE2007
- Author(s)
  T. Fukui, S. Hara, J. Motohisa
- Organizer
  2007 International Conference on Solid State Devices and Materials(SSDM 2007)
- Place of Presentation
  Tsukuba,Japan
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Growth of InGaAs nanowires on InP(111)B substrates by selective-area MOVPE2007
- Author(s)
  T. Sato, J. Noborisaka, J. Motohisa, S. Hara, T. Fukui
- Organizer
  The US Biennial Workshop on Organometallic Vapor Phase Epitaxy
- Place of Presentation
  Salt Lake,USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] InP(111)B基板上に作製したInGaAsナノワイヤの評価2007
- Author(s)
  佐藤拓也, 本久順一, 原真二郎, 福井孝志
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長法によるSi(111)基板上のIII-V族化合物半導体ナノワイヤ成長2007
- Author(s)
  冨岡克広, 本久順一, 原真二郎, 福井孝志
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] MOVPE選択成長法により作製したInGaAs系ナノワイヤの電気特性評価2007
- Author(s)
  登坂仁一郎, 佐藤拓也, 本久順一, 原真二郎, 福井孝志
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19206031
[Presentation] InP/InAs core-shell nanowires grown by selective area MOVPE2007
- Author(s)
  T. Fukui, S. Hara, J. Motohisa
- Organizer
  7th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices
- Place of Presentation
  Bad Honnef,German
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Position-controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-mismatched Substrates by Selective Area Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  K. Tomioka, J. Takeda, L. Yang, J. Motohisa, S. Hara, T. Fukui
- Organizer
  2007 MRS Spring Meeting
- Place of Presentation
  San Francisco,USA
- Data Source
  KAKENHI-PROJECT-18002003
[Presentation] Design and Growth of Nanowire Nanocavity
- Author(s)
  T. Wada, S. Hara, and J. Motohisa
- Organizer
  2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] III-V Semiconductor Nanowire Transistors and Light Emitting Deveices (Invited Paper)
- Author(s)
  Junichi Motohisa
- Organizer
  the 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
- Place of Presentation
  Legend Hotel Daejeon (Korea)
- Invited
- Data Source
  KAKENHI-PROJECT-23360129
[Presentation] GaAs/InGaAs/GaAs コアマルチシェルナノワイヤ共振器の評価
- Author(s)
  和田年弘, 原真二郎, 本久順一
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360114
[Presentation] 間隔の広いInP系NWアレイと量子ドットの形成と評価
- Author(s)
  柳瀬祥吾, 原真二郎, 本久順一
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360114

1. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
2. FUKUI Takashi (30240641)

# of Collaborated Projects: 10 results

# of Collaborated Products: 128 results
3. SATO Taketomo (50343009)

# of Collaborated Projects: 7 results

# of Collaborated Products: 0 results
4. HARA Shinjiro (50374616)

# of Collaborated Projects: 7 results

# of Collaborated Products: 100 results
5. HASEGAWA Hideki (60001781)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. KASAI Seiya (30312383)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
7. 冨岡克広 (60519411)

# of Collaborated Projects: 5 results

# of Collaborated Products: 73 results
8. AKAZAWA Masamichi (30212400)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
9. FUJIKURA Hajime (70271640)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
10. SAITOH Toshiya (70241396)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
11. IKEBE Masayuki (20374613)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
12. AMEMIYA Yoshihito (80250489)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. KANESHIRO Chinami (30318993)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. TAKEYAMA Mayumi (80236512)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. IGARASHI Hajime (90212737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. WATANABE Kota (20322828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. SASAKURA Hirotaka (90374595)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. YATABE Zenji (00621773)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. SAWADA Takayuki (40113568)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. WU Nan-jan (00250481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SANO Eiichi (10333650)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. YANG Lin (60374708)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
23. 須田善行 (70301942)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 古賀裕明 (80519413)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 深田直樹 (90302207)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. J. Wipakorn (40748216)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 宮崎剛 (50354147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 松村亮 (90806358)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. KLAR Peter Jens

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. ELM Matthias Thomas

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. KRUG VON NIDDA Hans-albrecht

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. SEKI Shouhei

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. 韓哲九

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. 安海岩

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
35. プリミーラモハン

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Motohisa Junichi 本久 順一

MOTOHISA Junichi 本久 順一

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Generation of Vector Beams using Semiconductor NanowiresPrincipal Investigator

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Study on the fabrication of Vertical FETs using GaN-Based Singular Nanostructures and Their Novel Characterization MethodPrincipal Investigator

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Fabrication and Characterization of Vertical FETs using GaN-based NanowiresPrincipal Investigator

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Study on Light-Emittind Devices on Si Substrates based on Semiconductor NanowiresPrincipal Investigator

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A Novel Photodetector Utilizing Semiconductor NanowiresPrincipal Investigator

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Fabrication of nanowire-based light emitting nanodevicesPrincipal Investigator

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Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructuresPrincipal Investigator

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Motohisa Junichi 本久順一

MOTOHISA Junichi 本久順一