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Motohisa Junichi  本久 順一

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MOTOHISA Junichi  本久 順一

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Researcher Number 60212263
Other IDs
External Links
Affiliation (Current) 2022: 北海道大学, 情報科学研究院, 教授
Affiliation (based on the past Project Information) *help 2018 – 2021: 北海道大学, 情報科学研究院, 教授
2009 – 2018: 北海道大学, 情報科学研究科, 教授
2014 – 2015: 北海道大学, 大学院情報科学研究科, 教授
2012 – 2013: 北海道大学, 大学院・情報科学研究科, 教授
2007 – 2010: Hokkaido University, 大学院・情報科学研究科, 教授 … More
2006: 北海道大学, 量子集積エレクトロニクスセンター, 助教授
2006: 量子集積エレクトロニクス研究センター, 助教授
2001 – 2006: Hokkaido Univ., Res. Center for Integrated Quantum Electronics, Ass. Pro., 量子集積エレクトロニクス研究センター, 助教授
2002: 北海道大学, 量子集積エレクトニクス研究センター, 助教授
2000: 北海道大学, 量子界面エレクトロクス研究センター, 助教授
1994 – 2000: 北海道大学, 量子界面エレクトロニクス研究センター, 助教授
1997: 北海道, 量子界面エレクトロニクス研究センター, 助教授
1993: Hokkaido University, Research Center for Interface Quantum Electronics, Lecturer, 量子界面エレクトロニクス研究センター, 講師 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Basic Section 21050:Electric and electronic materials-related
Except Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Mathematics and Physics … More / Social systems engineering/Safety system / 電子材料工学 / 表面界面物性 / Physics / Nanostructural physics / Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 28:Nano/micro science and related fields Less
Keywords
Principal Investigator
選択成長 / 半導体ナノワイヤ / 有機金属気相成長 / 量子ドット / 半導体 / 表面超格子 / 単一光子光源 / 有機金属気相選択成長 / 発光ダイオード / ナノワイヤ … More / 光取り出し効率 / フォトニック結晶 / MOVPE Growth / Selective Area Growth / 縦型トランジスタ / 人工原子 / スーパーアトム / 結合量子ドット / 原子ステップ / 人工格子 / 人工結晶 / Kagome格子 / 横方向成長 / Kaome格子 / ナノ構造周期配列構造 / ヘテロ構造 / 顕微フォトルミネセンス / 量子集積ハードウェア / 電界効果トランジスタ / 有機金属気相成長法 / 論理回路 / レーザ / 光共振器 / 励起子スピン緩和 / 多孔質構造 / GaN / InGaN / プラズマ支援分子線エピタキシー / 光支援電気化学エッチング / 光電極 / プラズマ支援分子線エピタキシー法 / 加工基板 / 微傾斜基板 / 結晶成長 / 多段原子ステップ / 電子波干渉 / Semiconductor / Patterned Substrate / Vicinal Substrate / Crystal Growth / Multiatomic Step / Quantum Dot / Lateral Surface Superlattice / Electron Interference / フォトニックバンドギャップ / マスクパターン / 再成長 / 2次元フォトニック結晶スラブ / 3角格子 / TM偏光・TE偏光 / Masked Substrate / Photonic Crystal / Photonic Bandgap / フォトニック結晶スラブ / フォトルミネセンス / 線欠陥・点欠陥導入構造 / フォトニックバンド / 時間領域差分(FDTD)法 / 線欠陥導波路 / 点欠陥共振器 / whispering gallery mode / Photonics Crystals / Photonics Crystal Slabs / Photoluminescence / Light Extraction Efficiency / Point / Line defect / Photonic Bands / 光検出器 / フォトダイオード / シリコンフォトニクス / 流量変調エピタキシー法 / アバランシェフォトダイオード / 分子線エピタキシャル成長 / 電気化学プロセス / 微細加工 / 偏光渦 / ベクトル光波 / ナノワイヤレーザ … More
Except Principal Investigator
結晶成長 / 窒化ガリウム / 有機金属気相成長 / 選択成長 / 量子ドット / 界面制御 / interface control / フェルミ準位ピンニング / 単電子トランジスタ / 近藤効果 / ナノワイヤ / 半導体物性 / 多孔質構造 / ナノ材料 / 表面制御 / 表面処理 / Gallium Nitride / surface control / Al_2O_3 / 量子ナノ構造 / 相補型単電子インバータ / 2分岐決定ダイアグラム / 単電子メモリー / スピンエレクトロニクス / 化合物半導体 / 窒化物半導体 / 光電気化学 / エネルギー変換 / 半導体 / Semiconductor / GaAs / 量子細線 / 電気化学プロセス / ショットキー接合 / 自然酸化膜 / GaN / Schottky contact / surface treatment / Fermi level pinning / HFET / トランジスタ / カゴメ格子 / フォトニック結晶 / 強磁性体 / III-V族化合物半導体 / ナノ構造 / インジウム燐 / ガリウムインジウム砒素 / マンガン砒素 / 1次元物性 / 磁性体 / 単電子メモリ / 単電子輸送 / 半導体ナノ構造 / 光吸収率 / 太陽電池 / 半導体ナノワイヤ / 強磁性体ナノ構造 / スピン偏極発光素子 / ボトムアップ形成 / 複合ナノ構造 / 半導体ナノテクノロジ / スピントロニクス / 振動発電 / エネルギーハーベスティング / 環境発電 / 無線センサ / RFID / スマートセンサー / センサーネットワーク / 無線センサー / 環境エネルギー / センサネットワーク / 化学センサ / 低損傷プロセス / 高電子移動度トランジスタ / 表面・界面物性 / 電子・電気材料 / Cryxtal growth / Quantum dot / 有機金属気相成長法 / Crystal Growth / Quantum Dots / MOCVD / 量子井戸 / 表面・界面準位 / 表面不活性化 / シリコン界面制御層 / フォトルミネセンス / quantum well / quantum wire / compound semiconductors / surface and interface states / surface passivation / silicon interface control layr / photoluminescence / マスク基板 / 量子ドットネットワーク / 単電子回路 / 単電子素子・回路 / クーロン振動 / クーロンギャップ / 論理回路 / 単電子素子 / クーロンブロッケード / MOVPE Growth / Selective Area Growth / Masked Substrate / Quantum Dot / Quantum Wire / Quantum Dot Network / Single Electron Transistor / Single Electron Circuit / ショットキー極限 / 金属 / 半導体界面 / 金属微粒子 / ショットキー障壁高 / インジウムリン / パルス法 / electrochemical process / Schottky limit / metal-semiconductor interface / Fermi-level pinning / nano metal particle / Schottky barrier height / オーミック接合 / フェルミン準位ピンニング / ohmic contact / Fermi level pinnning / natural oxide / MIS構造 / 窒化シリコン酸 / アルミナ膜 / フェルミ準位ビンニング / 窒化シリコン膜 / MIS接合 / ECRプラズマ / MIS structure / SiN_χ / ヘテロ構造 / 窒化カリウム / heterointerface / 半導体超微細化 / 光物性 / 新エネルギー / 垂直自立型ナノワイヤ / スピントランジスタ / ボトムアップ / メゾスコピック系 / 低損傷エッチング / 電子デバイス / 電気化学反応 / ウェットエッチング / 薄膜・量子構造 / トンネルFET / 電気・電子材料 / 半導体デバイス / 省エネルギー / ナノワイヤ材料 / シリコン / ゲルマニウム Less
  • Research Projects

    (36 results)
  • Research Products

    (346 results)
  • Co-Researchers

    (35 People)
  •  Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires

    • Principal Investigator
      深田 直樹
    • Project Period (FY)
      2021 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 28:Nano/micro science and related fields
    • Research Institution
      National Institute for Materials Science
  •  Generation of Vector Beams using Semiconductor NanowiresPrincipal Investigator

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Hokkaido University
  •  Study on the fabrication of Vertical FETs using GaN-Based Singular Nanostructures and Their Novel Characterization MethodPrincipal Investigator

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applications

    • Principal Investigator
      冨岡 克広
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Hokkaido University
  •  Fabrication and Characterization of Vertical FETs using GaN-based NanowiresPrincipal Investigator

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Hokkaido University
  •  Bottom-Up Integration of Vertical Nanowire Spin-Transistors on Silicon

    • Principal Investigator
      Hara Shinjiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Nanostructural physics
    • Research Institution
      Hokkaido University
  •  Study on Light-Emittind Devices on Si Substrates based on Semiconductor NanowiresPrincipal Investigator

    • Principal Investigator
      Motohisa Junichi
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications

    • Principal Investigator
      Sato Taketomo
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  A Novel Photodetector Utilizing Semiconductor NanowiresPrincipal Investigator

    • Principal Investigator
      Junichi Motohisa
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesis

    • Principal Investigator
      Taketomo Sato
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors

    • Principal Investigator
      SATO Taketomo
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Development of passive wireless sensor powered by vibration generator for safety surveillance of social infractructure

    • Principal Investigator
      IGARASHI Hajime
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Social systems engineering/Safety system
    • Research Institution
      Hokkaido University
  •  Fabrication of nanowire-based light emitting nanodevicesPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructuresPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2012 – 2013
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Study on Spin-Polarized Light-Emitting Diodes using Ferromagnetic/Semiconducting Nanowire Hybrids on Si Substrate

    • Principal Investigator
      HARA Shinjiro
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用

    • Principal Investigator
      SATO Taketomo
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Development of Quantum Integrated Hardwares based on Semiconductor NanowiresPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Mathematics and Physics
    • Research Institution
      Hokkaido University
  •  有機金属気相選択成長法によるガリウムヒ素単電子メモリの作製と評価

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  半導体ナノワイヤを用いた単一光子光源の研究Principal Investigator

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Hokkaido University
  •  半導体・強磁性体複合型ナノワイヤを用いた縦型ナノスピントランジスタの研究

    • Principal Investigator
      原 真二郎
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to DevicesPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  半導体人工格子による磁性制御Principal Investigator

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Surface/interface control of high-frequency and high-power transistors based on GaN materials

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  単一電子入力・単一電子出力型記憶素子の研究

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2001 – 2005
    • Research Category
      Grant-in-Aid for Creative Scientific Research
    • Research Institution
      Hokkaido University
  •  Formation of Photonic Crystals by Selective Area Growth and Their ApplicationsPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Metal contact formation to GaN based on the interface control technologies

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Insulated gate structures on GaN and their interface properties"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Formation and Characterization of High Density Semiconductor Quantum Dots

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1997 – 2000
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Physics
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  人工原子″スーパーアトム″の作製と評価Principal Investigator

    • Principal Investigator
      SAITOH Toshiya, 本久 順一
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Hokkaido University
  •  Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Fabrication and Characterization of Self-organized Quantum Nano-structures.

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic PropertiesPrincipal Investigator

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University

All 2021 2020 2019 2018 2017 2016 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Nanowire Field-Effect Transistors (in Fundamental Properties of Semiconductor Nanowires)2021

    • Author(s)
      Junichi Motohisa and Shinjiro Hara
    • Total Pages
      60
    • Publisher
      Springer Nature Singapore Pte Ltd
    • ISBN
      9789811590498
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Book] Fundamental Properties of Semiconductor Nanowires (分担執筆, Chapter名: Nanowire Field Effect Transistors)2020

    • Author(s)
      Junichi Motohisa, Shinjiro Hara
    • Total Pages
      57
    • Publisher
      Springer Nature AG.(Switzerland)
    • ISBN
    • Data Source
      KAKENHI-PROJECT-17H02727
  • [Book] Junichi Motohisa and Shinjirho Hara2020

    • Author(s)
      Junichi Motohisa and Shinjirho Hara
    • Publisher
      Springer
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Book] Nanowire Field Effect Transistors (in "Fundamental Properties of Semiconductor Nanowires")2020

    • Author(s)
      Junichi Motohisa and Shinjirho Hara
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Book] "III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Chapter 8, "Advances in III-V Semiconductor Nanowires and Nanodevices", Bentham eBooks, eISBN: 978-1-60805-052-92011

    • Author(s)
      Junichi Motohisa
    • Total Pages
      13
    • Publisher
      Bentham Science Publishers Ltd
    • Data Source
      KAKENHI-PROJECT-23360129
  • [Book] "III-V Semiconductor Nanowire Light Emitting Diodes and Lasers", Advances in III-V Semiconductor Nanowires and Nanodevices2011

    • Author(s)
      J. Motohisa, K. Tomioka, B. Hua, K. S. K. Varadwaj, S. Hara, K. Hiruma, and T. Fukui
    • Total Pages
      178
    • Publisher
      Bentham Science Publishers Ltd
    • Data Source
      KAKENHI-PROJECT-23360129
  • [Journal Article] InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 120 (SDM2020-52) Pages: 13-16

    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Journal Article] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Tomioka Katsuhiro、Gamo Hironori、Motohisa Junichi、Fukui Takashi
    • Journal Title

      2020 IEEE International Electron Devices Meeting (IEDM)

      Volume: IEDM-2020 Pages: 429-432

    • DOI

      10.1109/iedm13553.2020.9371991

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
  • [Journal Article] Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs2020

    • Author(s)
      Akamatsu Tomoya、Tomioka Katsuhiro、Motohisa Junichi
    • Journal Title

      Nanotechnology

      Volume: 31 Pages: 394003-394003

    • DOI

      10.1088/1361-6528/ab9bd2

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20H02176
  • [Journal Article] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Tai Yoshiki、Gamo Hironori、Motohisa Junichi、Tomioka Katsuhiro
    • Journal Title

      ECS Transactions

      Volume: 98 Pages: 149-153

    • DOI

      10.1149/09806.0149ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
  • [Journal Article] Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes2020

    • Author(s)
      Tomioka Katsuhiro、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Scientific Reports

      Volume: 10

    • DOI

      10.1038/s41598-020-67625-y

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor2020

    • Author(s)
      Tomioka Katsuhiro、Ishizaka Fumiya、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Applied Physics Letters

      Volume: 117 Pages: 123501-123501

    • DOI

      10.1063/5.0014565

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] Vertical InGaAs Nanowire Array Photodiodes on Si2019

    • Author(s)
      Chiba Kohei、Yoshida Akinobu、Tomioka Katsuhiro、Motohisa Junichi
    • Journal Title

      ACS Photonics

      Volume: 6 Pages: 260-264

    • DOI

      10.1021/acsphotonics.8b01089

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
  • [Journal Article] Vertical Tunnel FET Technologies using III-V/Si heterojunciton2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Journal Title

      ECS Transaction

      Volume: 92 Pages: 71-78

    • DOI

      10.1149/ma2019-02/25/1168

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy2019

    • Author(s)
      Motohisa Junichi、Kameda Hiroki、Sasaki Masahiro、Tomioka Katsuhiro
    • Journal Title

      Nanotechnology

      Volume: 30 Pages: 134002-134002

    • DOI

      10.1088/1361-6528/aafce5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
  • [Journal Article] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform2017

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa
    • Journal Title

      AIP Advances

      Volume: 7 Pages: 125304-125304

    • DOI

      10.1063/1.4993689

    • NAID

      120006380383

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080, KAKENHI-PROJECT-16K14221
  • [Journal Article] Composition-Dependent Growth Dynamics of Selectively Grown InGaAs Nanowires2014

    • Author(s)
      Y. Kohashi, S. Hara, J. Motohisa
    • Journal Title

      Mater. Res. Express

      Volume: VOL.1 Pages: 15-036

    • DOI

      10.1088/2053-1591/1/1/015036

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J01918, KAKENHI-PROJECT-23360129, KAKENHI-PROJECT-25600034
  • [Journal Article] Far-Field Emission Patterns of Nanowire Light-Emitting Diodes2014

    • Author(s)
      Junichi Motohisa, Yoshinori Kohashi, and Satoshi Maeda
    • Journal Title

      Nano Letters

      Volume: 14 Pages: 3653-3660

    • DOI

      10.1021/nl501438r

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Journal Article] Selective-area growth InP-based nanowires and their optical properties2012

    • Author(s)
      J. Motohisa
    • Journal Title

      Indium Phosphide and Related Materials (IPRM),2012 International Conference on

      Pages: 249-252

    • DOI

      10.1109/iciprm.2012.6403370

    • Data Source
      KAKENHI-PROJECT-24360114
  • [Journal Article] Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE2011

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: VOL.315 Pages: 148-151

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Journal Title

      Nano Letters Vol.10

      Pages: 1639-1644

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Vertical Surrounding Gate Transistors using single InAs Nanowires Grown on Si Substrate2010

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      Applied Physics Express Vol.3

    • NAID

      10027013579

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Analysis of twin defects in GaAs nanowires and tetrahedral and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy2010

    • Author(s)
      H.Yoshida, K.Ikejiri, T.Sato, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Journal Title

      Journal of Crystal Growth VOL.312

      Pages: 51-57

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Journal Title

      NANO LETTERS

      Volume: VOL.10 Pages: 1639-1644

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates2010

    • Author(s)
      T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, T. Fukui
    • Journal Title

      Appl. Phys. Express 3

      Pages: 25003-25003

    • NAID

      10027013579

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates2010

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, E.Sano, T.Fukui
    • Journal Title

      Applied Physics Express VOL.3

    • NAID

      10027013579

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Structural transition in indium phosphide nanowires2010

    • Author(s)
      Y.Kitauchi, Y.Kobayashi, K.Tomioka, S.Hara, K.Hiruma, T.Fukui, J.Motohisa
    • Journal Title

      NANO LETTERS

      Volume: VOL.10 Pages: 1699-1703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy2010

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: VOL.49

    • NAID

      210000068312

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires2010

    • Author(s)
      A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: VOL.312 Pages: 3592-3598

    • NAID

      120002678122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate2009

    • Author(s)
      Katsuhiro Tomioka, Yasunori Kobayashi, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    • Journal Title

      Nanotechnology 20

      Pages: 145302-145302

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers2009

    • Author(s)
      B.Hua, J.Motohisa, Y.Kobayashi, S.Hara, T.Fukui
    • Journal Title

      Nano Letters Vol.9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Analysis of Twin Defects in GaAs Nanowires and Tetrahedra and Their Correlation to GaAs (111)B Surface Reconstructions in Selective-Area Metal-Organic Vapor Phase Epitaxy2009

    • Author(s)
      Hiroatsu Yoshida, Keitaro Ikejiri, Takuya Sato, Shinjiroh Hara, Kenji Hiruma, Junichi Motohisa, Takashi Fukui
    • Journal Title

      J. Cryst. Growth 315

      Pages: 52-57

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers2009

    • Author(s)
      B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
    • Journal Title

      Nano Lett 9(1)

      Pages: 112-116

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Growth of Core-Shell InP nanowires for Photovoltaic Application by Selective-Area Metal-Organic Vapor-Phase Epitaxy2009

    • Author(s)
      H.Goto, N.Nosaki, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Journal Title

      Applied Physics Express Vol.2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowire lasers2009

    • Author(s)
      B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
    • Journal Title

      Nano Letters 9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure2009

    • Author(s)
      L.Yang, J.Motohisa, T.Fukui, L.X.Jia, L.Zhang, M.M.Geng. P.Chen, Y.L.Liu
    • Journal Title

      Optics Express VOL.17

      Pages: 9337-9346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowaire lasers2009

    • Author(s)
      B. Hua, J. Motohisa, Y. Kobayashi, S. Hara and T. Fukui
    • Journal Title

      Nano Letters vol. 9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of core-shell InP nanowires for photovoltaic application by selective-area metal-organic vapor-phase epitaxy2009

    • Author(s)
      H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Express 2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] 有機金属気相選択成長によるInPナノワイヤの成長と構造相転移2009

    • Author(s)
      北内悠介、本久順一、小林靖典、福井孝志
    • Journal Title

      電子情報通信学会技術報告 ED-2008-227

      Pages: 19-22

    • NAID

      110007131573

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate2009

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nanotechnology 20

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Transient band-bending in InP/InAs/InP core-multishell nanowires2009

    • Author(s)
      K. Goto, S. Tomimoto, B. Pal, Y. Masumoto, R Mohan, J. Motohisa and T.Fukui
    • Journal Title

      Physica Status Solidi C 6

      Pages: 205-208

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] One- and two-dimensional spectral diffusions in InP/InAs/InP core-multishell nanowires2009

    • Author(s)
      K.Goto, M.Ikezawa, S.Tomimoto, B.Pal, Y.Masumoto, P.Mohan, J.Motohisa, T.Fukui
    • Journal Title

      Japanese Journal of Applied Physics VOL.48

    • NAID

      210000066714

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy2009

    • Author(s)
      H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, T. Fukui
    • Journal Title

      Applied Physics Express 2

      Pages: 35004-35004

    • NAID

      10025085293

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy2009

    • Author(s)
      H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Express vol. 2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Microcavity structures in single GaAs nanowires2008

    • Author(s)
      B. Hua, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      physica status solidi (c) Vol.5

      Pages: 2722-2725

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires2008

    • Author(s)
      B. Pal, K. Goto, M. Ikezawa, Y. Masumoto, P. Mohan, J. Motohisa, T. Fukui
    • Journal Title

      Appl. Phys. Lett 93

      Pages: 73105-73105

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement2008

    • Author(s)
      Takuya Sato, Yasunori Kobayashi, Junichi Motohisa, Shinjiro Hara, Takashi Fukui
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5111-5113

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy2008

    • Author(s)
      K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      Nanotechnology 19

      Pages: 265604-265604

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5111-5113

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] 有機金属気相選択成長法によるInGaAs系ナノワイヤの形成とその電気的評価2008

    • Author(s)
      登坂 仁一郎, 佐藤 拓也, 本久 順一, 原 真二郎, 福井 孝志
    • Journal Title

      電子情報通信学会 技術研究報告 107

      Pages: 5-10

    • NAID

      110006613699

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Formation of InP and InGaAs air-hole arrays on InP(111) substrates by selective-area metal-organic vapor-phase epitaxy2008

    • Author(s)
      S. Hashimoto, J. Takeda, A. Tarumi, S. Hara, J. Motohisa and T. Fukui
    • Journal Title

      Japanese journal of applied physics 47

      Pages: 3354-3358

    • NAID

      210000064731

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Optics with single nanowires2008

    • Author(s)
      V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J. G. Rivase, E. Bakkers, G. Patriarche, L. Liu, J.-C.Harmand, Y. Kobayashi and J. Motohisa
    • Journal Title

      C.R. Physique 9

      Pages: 804-815

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well2008

    • Author(s)
      L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui M.M. Geng, L.X. Jia, L. Zhang and Y.L. Liu
    • Journal Title

      Nanotechnology 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth characteristics of GaAs nanowires obtained by selective-area metal-organic vapour-phase epitaxy2008

    • Author(s)
      K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nanotechnology 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] MOCVD法による半導体ナノワイヤの作製とデバイス応用2008

    • Author(s)
      福井 孝志, 本久 順一, 原 真二郎, 佐藤 拓也
    • Journal Title

      真空ジャーナル 117

      Pages: 15-17

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires2008

    • Author(s)
      B. Pal, K. Goto, Y. Mosumoto, P. Mohan, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Letters 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces2008

    • Author(s)
      H. Iguchi, S. Hara, J. Motohisa and T. Fukui
    • Journal Title

      Japanese journal of applied physics 47

      Pages: 3253-3256

    • NAID

      210000064709

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy2008

    • Author(s)
      Takuya Sato, Junichi Motohisa, Jinichiro Noborisaka, Shinjiro Hara, Takashi Fukui
    • Journal Title

      J. Cryst. Growth Vol.310,No.7-9

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Control of InAs nanowire growth directions on Si2008

    • Author(s)
      K. Tomioka, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nano Letters 8

      Pages: 3475-3480

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Microcavity structures in single GaAs nanowires2008

    • Author(s)
      B. Hua, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Physica Status Solidi C 5

      Pages: 2722-2725

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Spectroscopy and imaging of GaAs-InGaAs-GaAs heterostructured nanowires grown by selective-area metalorganic vapor phase epitaxy2008

    • Author(s)
      M. Fukui, Y. Kobayashi, J. Motohisa and T. Fukui
    • Journal Title

      Physica Status Solidi C 5

      Pages: 2743-2745

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成2008

    • Author(s)
      冨岡克弘、佐藤拓也、原真二郎、本久順一、福井孝志
    • Journal Title

      表面科学 29

      Pages: 726-730

    • NAID

      10024407649

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Spectroscopy and Imaging of GaAs-InGaAs-GaAs Heterostructured Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy2008

    • Author(s)
      M. Fukui, Y. Kobayashi, J. Motohisa, T. Fukui
    • Journal Title

      physica status solidi (c) Vol.5

      Pages: 2743-2745

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Control of InAs Nanowire Growth Directions on Si2008

    • Author(s)
      K. Tomioka, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      Nano Lett 8(10)

      Pages: 3475-3480

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Micro-photoluminescence spectroscopy study of high quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy2008

    • Author(s)
      Y. Kobayashi, M. Fukui, J. Motohisa, T. Fukui
    • Journal Title

      Physica E Vol.40,No6

      Pages: 2204-2206

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
    • Journal Title

      Japanese Journal of Applied Physics vol. 46

      Pages: 7562-7568

    • NAID

      40015705160

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, Takashi Fukui
    • Journal Title

      Appl. Phys. Lett 91

      Pages: 131112-131112

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Electrical characteristics of InGaAs nanowire-top-gate field effect transistors by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

      Pages: 7562-7568

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      B. Hua, J. Motohisa, Y. Ding, S. Hara, T. Fukui
    • Journal Title

      Applied physics letters 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy2007

    • Author(s)
      Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, Takashi Fukui
    • Journal Title

      Nano Lett 7(12)

      Pages: 3598-3602

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Electrical Characterizations of InGaAs Nanowire top-gate Field-effect-Transistors by using Selective-area MOVPE2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 7562-7562

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Crystallographic Structure of InAs? Nanowires Studied by Transmission Electron Microscopy2007

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    • Journal Title

      Jpn. J. Appl. Phys 46

    • NAID

      210000063794

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Crystallographic structure of InAs nanowires studied by transmission electron microscopy2007

    • Author(s)
      K. Tomioka, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

    • NAID

      210000063794

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Characterization of Fabry-P?rot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, and Takashi Fukui
    • Journal Title

      Applied Physics Letters 91

      Pages: 13112-13112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy2007

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui
    • Journal Title

      Japanese Journal of Applied Physics 46

    • NAID

      210000063794

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Electrical Characterizations of InGaAs? Nanowire-top-gate Field-effect-Transistors by using Selective-area MOVPE", Jpn. J. Appl. Phys. 46, 7562(2007).2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 7562-7562

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes2007

    • Author(s)
      K. Tsumura, S. Nomura, P. Mohan, J. Motohisa, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

    • NAID

      120007138780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy2007

    • Author(s)
      Y. Ding, J. Motohisa, B. Hua, S. Hara, T. Fukui
    • Journal Title

      Nano letters 7

      Pages: 3598-3602

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Observation of Microcavity Modes and Waveguides in InP Nanowires Fabricated by Selective-Area Metalorganic Vapor-Phase Epitaxy2007

    • Author(s)
      Ying Ding, Junichi Motohisa, Bin Hua, Shinjiroh Hara, and Takashi Fukui
    • Journal Title

      Nano Letters 7

      Pages: 3598-3602

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Foramtion of III-V Compound Semiconductor Nanowire and a Crystal Structure Change between Zincblende and Wurzite (review)2007

    • Author(s)
      K. Hiruma, K. Ikejiri, H. Yoshida, K. Tomioka, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      Japanese Journal of Crystal Growth 34,No.4

      Pages: 224-232

    • Data Source
      KAKENHI-PROJECT-19206031
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Air Holes Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy2006

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Sensors and Actuators A (To be published)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)2006

    • Author(s)
      Junichi Motohisa, Takashi Fukui
    • Journal Title

      Oyo Buturi 75

      Pages: 296-302

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free selective area MOVPE of semiconductor nanowires2006

    • Author(s)
      J.Motohisa, T.Fukui
    • Journal Title

      Proceedings of SPIE 6370

    • Data Source
      KAKENHI-PROJECT-17656019
  • [Journal Article] 半導体ナノワイヤとナノデバイス応用2006

    • Author(s)
      本久 順一
    • Journal Title

      応用物理 75・3

      Pages: 296-302

    • NAID

      10020530831

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] 半導体ナノワイヤとナノデバイス応用2006

    • Author(s)
      本久 順一
    • Journal Title

      応用物理 75・3

      Pages: 296-302

    • NAID

      10020530831

    • Data Source
      KAKENHI-PROJECT-17656019
  • [Journal Article] Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs2005

    • Author(s)
      Lin Yang, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Opt.Eng. 44

      Pages: 78002-78002

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays2005

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2903-2907

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs?(111)B substrates using flow-rate modulation mode2005

    • Author(s)
      Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Photoluminescence from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara.J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
    • Journal Title

      Institute of Physics Conference Series (IOP) No.184

      Pages: 393-398

    • Data Source
      KAKENHI-PROJECT-17656100
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms, Their Application in Waveguides2005

    • Author(s)
      L.Yang, J.Motohisa, T.Fukui
    • Journal Title

      Jpn.J.Appl.Phys Vol.44, No.4B

      Pages: 2531-2536

    • NAID

      10015704763

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode.2005

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara, J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
    • Journal Title

      Inst.Phys.Conf.Ser. No 184

      Pages: 393-398

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005

    • Author(s)
      Jinichiro Noborisaka, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Appl. Phys. Lett. 86

      Pages: 213102-213102

    • NAID

      120000960844

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy2005

    • Author(s)
      J.Noborisaka, J.Motohisa, S.Hara, T.Fukui
    • Journal Title

      Applied Physics Letters (AIP) Vol.87, No.9

      Pages: 93109-93109

    • Data Source
      KAKENHI-PROJECT-17656100
  • [Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs (111)B substrates using flow-rate modulation mode2005

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Physica E 3-4・23

      Pages: 298-304

    • NAID

      120000958778

    • Data Source
      KAKENHI-PROJECT-13GS0001
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 180-185

    • NAID

      120000954504

    • Data Source
      KAKENHI-PROJECT-13GS0001
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda, Masaru Inari, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Journal of Crystal Growth Volume 272, 1-4

      Pages: 570-575

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa J.Noborisaka, J.Takeda, M.Inari, T.Fukui
    • Journal Title

      Journal of Crystal Growth v 272, n 1-4

      Pages: 180-185

    • NAID

      120000954504

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 570-575

    • Data Source
      KAKENHI-PROJECT-13GS0001
  • [Journal Article] Growth and optical properties of 2D photonic crystals based on hexagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Material Research Society Proceedings 797

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs(111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 570-575

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth of GaAs?/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa, J.Takeda, M.Inari, J.Noborisaka, T.Fukui
    • Journal Title

      Physica E v 23, n 3-4

      Pages: 298-304

    • NAID

      120000958778

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Physica E 3-4・23

      Pages: 298-304

    • NAID

      120000958778

    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AIGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004

    • Author(s)
      J.Motohisa Takeda, M.Inari, T.Fukui
    • Journal Title

      Mat.Res.Soc.Proc. Vol.797

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Physica E 3-4・23

      Pages: 298-304

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 570-575

    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 180-185

    • NAID

      120000954504

    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Realization of InAs?-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy2004

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Applied Physics Letters Volume 84, Issue 14

      Pages: 2664-2666

    • NAID

      120000956837

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      Junichi Motohisa
    • Journal Title

      Journal of Crystal Growth 1-4・272

      Pages: 180-185

    • NAID

      120000954504

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals2004

    • Author(s)
      M.Inari, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Physica E Vol.21, No.2-4

      Pages: 620-624

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application2003

    • Author(s)
      M.Akabori, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Nanotechnology Vol.14, No.10

      Pages: 1071-1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Single-electron AND/NAND logic circuits based on a self-organized dot network2003

    • Author(s)
      F.Nakajima, Y.Miyoshi, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.13

      Pages: 2680-2682

    • NAID

      120000953010

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy2003

    • Author(s)
      P.Mohan, F.Nakajima, M.Akabori, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.4

      Pages: 689-691

    • NAID

      120000952950

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes : selective area metal organic vapor phase epitaxy

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Optics Express Vol.13, No.26

      Pages: 10823-10832

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Patent] 半導体装置及び半導体装置の製造法2010

    • Inventor(s)
      冨岡克広、福井孝志、本久順一、原真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2010-040019
    • Filing Date
      2010-02-25
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] ナノワイヤ太陽電池及びその製造方法2009

    • Inventor(s)
      後藤肇、福井孝志、本久順一、比留間健之
    • Industrial Property Rights Holder
      本田技研工業(株)、北海道大学
    • Industrial Property Number
      2009-295806
    • Filing Date
      2009-12-25
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 太陽電池、カラーセンサ、ならびに発光素子および受光素子の製造方法2009

    • Inventor(s)
      比留間健之、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2009-272140
    • Filing Date
      2009-11-30
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 多接合太陽電池の製造方法2008

    • Inventor(s)
      後藤肇、本久順一、福井孝志
    • Industrial Property Rights Holder
      (株)本田技術研究所、北海道大学
    • Filing Date
      2008-09-03
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間 健之、原 真二郎、本久 順一、福井 孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体構造物の製造方法2008

    • Inventor(s)
      冨岡克弘、福井孝志、本久順一、原真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-09-01
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] ナノワイヤ太陽電池の構造と作製方法2008

    • Inventor(s)
      後藤肇、大橋智昭、本久順一、福井孝志
    • Industrial Property Rights Holder
      (株)本田技術研究所、北海道大学
    • Filing Date
      2008-07-16
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間健之、原真二郎、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間健之、原真二郎、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2007

    • Inventor(s)
      比留間健之・福井孝志・本久順一・原 真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2007-214119
    • Filing Date
      2007-08-20
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Photo-assisted electrochemical etching of GaN for nanostructure fabrication2021

    • Author(s)
      Michihito Shimauchi, Kazuki Miwa, Masachika Toguchi, Taketomo Sato, Junichi Motohisa
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] InPナノワイヤの接合構造と発光ダイオード特性の関係2021

    • Author(s)
      木村 峻、勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021

    • Author(s)
      小原 康,冨岡 克広,原 真二郎,本久 順一
    • Organizer
      第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021

    • Author(s)
      小原 康,冨岡 克弘,原 真二郎,本久 順一
    • Organizer
      第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] (招待講演) InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Organizer
      2020年度電子情報通信学会 シリコン材料・デバイス研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Si上のInAs/GaSbコアシェルナノワイヤ縦型サラウンディングゲートトランジスタの試作2021

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ縦型トンネルFETの作製2020

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui
    • Organizer
      66th International Electron Devices Meeting (IEDM 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] Selective-area growth of InGaAs/GaSb core-shell nanowires on Si2020

    • Author(s)
      Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Y. Tai, J. Motohisa, K. Tomioka
    • Organizer
      Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 電気めっき法によるGaNへのPt電極の形成と電気特性評価2020

    • Author(s)
      小原康、島内道人、佐藤威友、本久順一
    • Organizer
      第55回応用物理学会北海道支部/第16回日本光学会北海道支部合同学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Organizer
      The 20th International Meeting on Information Display (IMID 2020)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長と電気特性2020

    • Author(s)
      蒲生 浩憲、陳 栎安、勝見 悠、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020

    • Author(s)
      田井 良樹、赤松 知弥、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Fabrication of GaN nanowires by wet etching using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019

    • Author(s)
      Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] RF-MBEにより選択成長したGaNナノワイヤの電気特性評価2019

    • Author(s)
      山本侑也、島内道人、本久順一
    • Organizer
      第54回応用物理学会北海道支部/第15回日本光学会北海道支部 合同学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Hiroki Kameda, Katsuhiro Tomioka, and Junichi Motohisa
    • Organizer
      Nanowire Weak 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019

    • Author(s)
      H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Demonstration of InAs nanowire vertical transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] アニールによるInPナノワイヤ直径微細化2019

    • Author(s)
      佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第54回応用物理学会北海道支部/第15回日本光学会北海道支部 合同学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] GaNの選択的光電気化学エッチング2019

    • Author(s)
      島内 道人、三輪 和希、渡久地 政周、佐藤 威友、本久順一
    • Organizer
      応用物理学会界面ナノ電子化学研究会
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019

    • Author(s)
      Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Fabrication of GaN nanowires by wet etching using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019

    • Author(s)
      Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
    • Organizer
      電子材料シンポジウム
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Organizer
      236th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] コンタクトレス光電気化学エッチング及びウェットエッチングによる 窒化ガリウムナノワイヤの作製2019

    • Author(s)
      島内道人、三輪和希、渡久地政周、佐藤威友、本久順一
    • Organizer
      2019年 第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019

    • Author(s)
      Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K.Tomioka
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Fabrication of GaN nanowires by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2019

    • Author(s)
      Ml. Shimauchi, K. Miwa, M. Toguchi, T. Sato, and J. Motohisa
    • Organizer
      The 9-th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04528
  • [Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019

    • Author(s)
      蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2019 International Workshop on Physics of Semiconductor Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] 光電気化学エッチングによる窒化ガリウムの微細加工の検討2019

    • Author(s)
      島内 道人、三輪 和希、渡久地 政周、佐藤 威友、本久順一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019

    • Author(s)
      K. Tomioka, J. Motohisa
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥, 佐々木 正尋, 冨岡 克広, 本久 順一
    • Organizer
      第80回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Electroluminescence from InP-based Heterostructure Nanowires2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018

    • Author(s)
      佐々木 正尋、千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Study on emission mechanism in InP-based nanowire LEDs2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Nanowire Week 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Electrical characterization of selectively grown GaN nanowires2018

    • Author(s)
      Y. Yamamoto, M. Shimauchi, J. Motohisa
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Study on Emission Mechanisms in InP-based Nanowire LEDs2018

    • Author(s)
      Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
    • Organizer
      Nanowire Week 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018

    • Author(s)
      M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InPナノワイヤLEDの温度依存性評価2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018

    • Author(s)
      Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] InAsP 埋め込み InP ナノワイヤにおける発光波長制御2017

    • Author(s)
      佐々木 正尋、千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017

    • Author(s)
      H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
    • Organizer
      22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Photoluminescence of Zn-Doped InP Nanowires: Mixing of Crystal Structures, Donor-Acceptor Pair Recombination, and Surface Effects2017

    • Author(s)
      Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, Shinjiro Hara, Katsuhiro Tomioka
    • Organizer
      the 29th International Conference on Defects in Semiconductors (ICDS 2017), Matsue, Japan, July 31-August 4, 2017, TuP-33
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02727
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017

    • Author(s)
      [8].千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Nanowire quantum dots emitting at telecom wavelength2017

    • Author(s)
      M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      The 24th Congress of the International Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] 縦型ナノワイヤFETに向けたGaNナノワイヤ成長条件の検討2017

    • Author(s)
      山本 侑也、環 尚杜、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017

    • Author(s)
      千葉 康平、吉田 旭伸、冨岡 克広、本久 順一:
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Vertical InGaAs nanowire photodiode array on Si2017

    • Author(s)
      K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      MRS fall meeting 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017

    • Author(s)
      K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      30th International Microprocesses and Nanotechnology Conference (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] 縦型ナノワイヤFETに向けたGaNナノワイヤ形成条件の検討2017

    • Author(s)
      山本 侑也、環 尚人、本久 順一
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] Dependence on growth conditions in selective-area growth of GaN nanowires using RF-plasma-assisted molecular beam epitaxy2017

    • Author(s)
      Y. Yamamoto, N. Tamaki, A. Sonoda, and J. Motohisa
    • Organizer
      Compound Semiconductor Week 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05323
  • [Presentation] Si基板上InGaAsナノワイヤの組成制御2016

    • Author(s)
      千葉 康平、冨岡 克広、石坂 文哉、吉田 旭伸、本久 順一
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016

    • Author(s)
      K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
    • Organizer
      PRiME 2016, 230th Meeting of The Electrochemical Society (ECS 230)
    • Place of Presentation
      Honolulu
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016

    • Author(s)
      K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa
    • Organizer
      The 35th Electronic Materials Symposium (EMS 35)
    • Place of Presentation
      Moriyama
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] 横方向成長させたGaAsナノワイヤの評価2013

    • Author(s)
      和田年弘、小橋義典、原 真二郎、本久 順一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学(京都府京田辺市)
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] Selective area growth of GaN by RF-plasma assisted Molecular Beam Epitaxy2013

    • Author(s)
      A. Onodera, A. Yamamoto, and J. Motohisa
    • Organizer
      International Symposium on Advanced Nanodevices and Nanotechnology
    • Place of Presentation
      米国ハワイ州カウアイ シェラトンカウアイリゾート
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] Study on the lateral growth on GaAs Nanowires2013

    • Author(s)
      T. Wada, Y. Kohashi, S. Hara and J. Motohisa
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      滋賀県守山市ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] A New Growth Mode of InP Nanowires in Selective-Area Metal-Organic Vapor-Phase Epitaxy2013

    • Author(s)
      S. Yanase, Y. Kohashi, S. Hara, and J. Motohisa
    • Organizer
      International Symposium on Advanced Nanodevices and Nanotechnology
    • Place of Presentation
      米国ハワイ州カウアイ シェラトンカウアイリゾート
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] Selective area growth of GaN by RF-plasma assisted molecular beam epitaxy2013

    • Author(s)
      A. Onodera, A. Yamamoto, and J. Motohisa
    • Organizer
      International Symposium on Advanced Nanodevice and Nanotechnology
    • Place of Presentation
      Kauai, Hawai, US.
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] RF-MBE法によるGaN及びInGaNの成長と評価2013

    • Author(s)
      山本礼奈, 小野寺彩, 本久順一
    • Organizer
      第48回応用物理学会北海道支部/第9回日本光学会北海道地区合同学術講演会
    • Place of Presentation
      釧路市生涯学習センター(釧路市)
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] RF-MBE法によるGaN及びInGaNの成長と評価2013

    • Author(s)
      山本 礼奈、小野寺 彩、本久 順一
    • Organizer
      第48回応用物理学会北海道支部/第9回日本光学会北海道地区 合同学術講演会
    • Place of Presentation
      釧路市生涯学習センター(釧路市)
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] RF-MBE法によるGaNの選択成長2012

    • Author(s)
      小野寺 彩、山本 礼奈、本久 順一
    • Organizer
      2012年秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(松山市)
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] Selective-area growth and optical properties of InP-based nanowires2012

    • Author(s)
      J. Motohisa
    • Organizer
      Nanowires 2012
    • Place of Presentation
      Paul Drued Institute (Germany)(invited)
    • Year and Date
      2012-09-19
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] RF-MBE法によるGaNの選択成長2012

    • Author(s)
      小野寺彩, 山本礼奈, 本久順一
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学(東京)
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] RF-MBE法によるGaNの選択成長2012

    • Author(s)
      小野寺彩, 山本礼奈, 本久順一
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(松山市)
    • Data Source
      KAKENHI-PROJECT-24656196
  • [Presentation] Selective-Area MOVPE Growth of InP-Based Nanowires and Their Optical Properties2012

    • Author(s)
      J. Motohisa
    • Organizer
      24th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      University of California, Santa Barbara (USA)(invited)
    • Year and Date
      2012-08-30
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] Far-Field Emission Patterns in InP Nanowire LEDs2012

    • Author(s)
      J. Motohisa
    • Organizer
      31st International Conference on Physics of Semiconductors
    • Place of Presentation
      Swiss Federal Institute of Technology Zurich (ETH)(Switzerland)
    • Year and Date
      2012-08-02
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] GaAs and related III-V nanowires formed by using selective-area metal-organic vapor-phase epitaxy and their applications to optoelectronics2011

    • Author(s)
      K.Hiruma, S.Fujisawa, K.Ikejiri, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      473rd Wilhelm and Else Heraeus Seminar on III-V Nanowires : Growth, Properties, and Applications
    • Place of Presentation
      Physikzentrum, Bad Honnef, Germany(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth of InGaAs nanowires on Si2010

    • Author(s)
      K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InAs系ナノワイヤトランジスタ(招待講演)2010

    • Author(s)
      本久順一
    • Organizer
      電子情報通信学会2010年総合大会
    • Place of Presentation
      仙台市
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      2010 Conference on Optoelectronic and Microelectronic Materials and Devices
    • Place of Presentation
      The Australian National University, Canberra, Australia(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of III-V semiconductor nanowires in selectve-area metalorganic vapor phase epitaxy2010

    • Author(s)
      J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy2010

    • Author(s)
      S.Fujisawa, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      University of Tokyo, Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with re-growth method2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowire formation using catalyst-free MOVPE and applications to optoelectronic devices2010

    • Author(s)
      K.Hiruma, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      The 12th Nanowire Research Society Meeting & Nano Korea 2010 Satellite Session
    • Place of Presentation
      KINTEX, Goyang, Korea(招待講演)
    • Year and Date
      2010-08-20
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      Material Research Society 2010 Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor core-shell nanowires grown by selective area MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      Material Research Society (MRS) 2010 Spring Meeting
    • Place of Presentation
      Moscone West and Marriott Hotel, San Francisco, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires-from Crystal Growth to Device Applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Integration of III-V NW-based vertical FETs on Si and device concept for tunnel FET using III-V/Si heterojunctions2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Tanaka, T.Fukui
    • Organizer
      Material Research Society (MRS) 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center and Sheraton Hotel, Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Electrical characterization of InGaAs nanowire MISFETs fabricated by dielectric-first process2010

    • Author(s)
      Y.Kohashi, T.Sato, K.Tomioka, S.Hara, T.Fukui, J.Motohisa
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      University of Tokyo, Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(Invited)2010

    • Author(s)
      J.Motohisa, B.Hua, K.S.K.Varadwaj, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      IEEE photonics society winter topical 2010
    • Place of Presentation
      Majorca, Spain
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and characterization of core-multishell GaAs nanowire array solar cell2010

    • Author(s)
      S.Soundeswaran, K.Tomioka, T.Sato, M.Yoshimura, T.Sato, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Nanomaterials
    • Place of Presentation
      Mahatma Gandhi University, Kottayam, Kerala, India
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication and characterization of InAs tubular channel FETs using core-shell nanowires grown by SA-MOVPE2010

    • Author(s)
      T.Sato, J.Motohisa, E.Sano, S.Hara, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of III-V semiconductor nanowires in selective-area metalorganic vapor phase epitaxy2010

    • Author(s)
      J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing International Convention Center, Beijing, China(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting-diode array on Si substrate2010

    • Author(s)
      K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Organizer
      SPIE Infrared Remote Sensing and Instrumentation XVIII
    • Place of Presentation
      San Diego Convention Center, San Diego, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE (invited)2010

    • Author(s)
      J. Motohisa, B. Hua, K.S.K. Varadwaj, S. Hara, K. Hiruma, T. Fukui
    • Organizer
      Winter Topicals 2010
    • Place of Presentation
      Majorca, Spain
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Selective-area growth of InGaAs nanowires on Si(111) substrate2010

    • Author(s)
      K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      Material Research Society (MRS) 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center and Sheraton Hotel, Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires and core-shell nanowires and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on Superlattices, Nanostructures and Nanodevices
    • Place of Presentation
      Beijing International Convention Center, Beijing, China(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of GaN nanorods on Si(111) by rf-assisted molecular beam epitaxy2010

    • Author(s)
      N.Isomura, T.Hashizume, J.Motohisa
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE2010)
    • Place of Presentation
      Humboldt-Universitat zu Berlin, Berlin, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(invi9ted)2010

    • Author(s)
      J.Motohisa, et al.
    • Organizer
      Winter Topicals 2010
    • Place of Presentation
      Majorca, Spain
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication of III-V Semiconductor Nanowires by SA-MOVPE and their Applications to Photonic and Photovoltaic Devices2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device applications(Invited)2010

    • Author(s)
      S.Hara, J.Motohisa, K.Tomioka, K.Hiruma, T.Fukui
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] GaAs/AlGaAs heterostructure nanowires with a GaAs quantum well formed by selective-area metal organic vapor-phase epitaxy2010

    • Author(s)
      K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      5th Nanowire Growth Workshop 2010
    • Place of Presentation
      CNR Building, Rome, Italy
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a GaAs Quantum Well Formed by Selective-Area Metal Organic Vapor-Phase Epitaxy2010

    • Author(s)
      K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing International Convention Center, Beijing, China
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Heteroepitaxial growth of InGaAs Nanowires formed on GaAs(111)B by Selective-Area MOVPE2010

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs2010

    • Author(s)
      Y.Kobayashi, J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 有機金属気相成長法によるGaAs上へのGaSb選択成長2010

    • Author(s)
      高山雄大, 冨岡克広, 福井孝志, 本久順一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InPナノワイヤを用いたInAs-チューブチャネルFETの作製と評価2010

    • Author(s)
      佐藤拓也, 本久順一, 原真二郎, 佐野栄一, 福井孝志
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InAs系ナノワイヤトランジスタ2010

    • Author(s)
      本久順一, 田中智隆, 冨岡克弘, 福井孝志
    • Organizer
      電子情報通信学会2010年総合大会
    • Place of Presentation
      仙台市
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] 熱ナノインプリントを利用したMOVPE選択成長2010

    • Author(s)
      井上理樹, 佐藤拓也, 池辺将之, 原真二郎, 福井孝志, 本久順一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V Semiconductor Nanowires Grown and Their Device Applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
    • Place of Presentation
      Ulm, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V nanowires by selective-area MOVPE and their applications (invited)2009

    • Author(s)
      J. Motohisa
    • Organizer
      2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2009)
    • Place of Presentation
      Anan, Tokushima, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication and electrical characterization of InAs tubular channel nanowire FETs2009

    • Author(s)
      T.Sato, J.Motohisa, S.Hara, E.Sano, T.Fukui
    • Organizer
      International Symposium on Advanced Nanostructures and Nano-Devices
    • Place of Presentation
      Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications (invited)2009

    • Author(s)
      J. Motohisa, S. Hara, K. Hiruma, T. Fukui
    • Organizer
      The XV International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Analysis of the twin defects occurring in GaAs nanowires grown by selective-area metal-organic Vapor phase epitaxy2009

    • Author(s)
      H. Yoshida, T. Sato, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(invited)2009

    • Author(s)
      J.Motohisa, et al.
    • Organizer
      The XV International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InAs Nanowire Vertical Surrounding Gate FET on Si Substrate2009

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      2009 International Conference on Solid State Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position controlled growth and optical properties of III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2009

    • Author(s)
      J. Motohisa, K. Tomioka, S. Hara, K. Hiruma and T. Fukui
    • Organizer
      The SPIE Photonics West Conferences 2009
    • Place of Presentation
      San Jose, California, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V nanowires by selective-area MOVPE and their applications(invited)2009

    • Author(s)
      J.Motohisa
    • Organizer
      2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Na nostructures(SemiconNano 2009)
    • Place of Presentation
      Anan, Tokushima, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(Invited)2009

    • Author(s)
      J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The XV International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] MOVPE選択成長法によるInAsナノワイヤの2端子I-V測定とそのFET応用の検討2009

    • Author(s)
      田中智隆, 冨岡克広, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第44回応用物理学会北海道支部/第5回日本光学会北海道地区合同学術講演会
    • Place of Presentation
      函館
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Growth of p/n-doped GaAs-AlGaAs Core-multi-shell Nanowire Array on Si(111)by Selective-area MOVPE2009

    • Author(s)
      K.Tomioka, Y.Kobayashi, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires grown on Si substrates2009

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of tubular InAs nanowires for FET applications2009

    • Author(s)
      T.Sato, J.Motohisa, S.Haza, E.Sano, K.Hiruma, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Application of Semiconductor Nanowires(invited)2009

    • Author(s)
      J.Motohisa
    • Organizer
      International Conference on Nanoscience and Technology, China 2009(ChinaNANO 2009)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V semiconductor nanowires : From growth to device applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Microprocesses and Nanoteclmology Conference(MNC2009)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Application of Semiconductor Nanowires2009

    • Author(s)
      J. Motohisa
    • Organizer
      International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Analysis of twin development during selective growth of GaAs nanowires by using catalyst-free metal organic vapor-phase epitaxy2009

    • Author(s)
      K.Hiruma, H.Yoshida, K.Ikejiri, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Near-infrared Iasing in GaAs/GaAsP coaxial core-shell nanowires(invited)2009

    • Author(s)
      J.Motohisa, et al.
    • Organizer
      International Workshop on Photons and Spins in Nanostructures(IWPSN)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] 半導体ナノワイヤのデバイス応用(招待講演)2009

    • Author(s)
      本久順一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Structural Transition of InP Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy2009

    • Author(s)
      Y.Kitauchi, J.Motohisa, K.Tomioka, Y.Kobayashi, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 半導体ナノワイヤのデバイス応用2009

    • Author(s)
      本久順一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication and Electrical Characterization of InAs Tubular Channel Nanowire FETs2009

    • Author(s)
      T, Sato, J. Motohisa, S. Hara, E. Sano, T. Fukui
    • Organizer
      the 2009 International Symposium on Advanced Nanostructures and Nanodevices (ISANN 2009)
    • Place of Presentation
      Kaanapali, Maui, Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires on Si Substrates2009

    • Author(s)
      T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, T. Fukui
    • Organizer
      the 2009 Material Research Society (MRS) Fall Meeting
    • Place of Presentation
      Boston, Massachusetts, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] 有機金属気相選択成長法による半導体ナノワイヤの成長とその成長機構(招待講演)2009

    • Author(s)
      比留間健之, 原真二郎, 本久順一, 福井孝志
    • Organizer
      化学工学会第40回秋季大会(SCEJ)
    • Place of Presentation
      仙台
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Heterepitaxy of III-V nanowires on Si and optical application2009

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      Intemational Workshop on Photons and Spins in Nanostructures(IWPSN)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position Controlled Growth and Optical Properties of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications (invited)2009

    • Author(s)
      J. Motohisa, et.al.
    • Organizer
      the SPIE Photonics West Conferences 2009
    • Place of Presentation
      San Jose, California, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Growth of III-V nanowires by selecdve-area MOVPE and their applications(Invited)2009

    • Author(s)
      J.Motohisa
    • Organizer
      2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures(SemiconNano 2009)
    • Place of Presentation
      Anan, Tokushima, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Near-infrared lasing in GaAs/GaAsP coaxial core-shell nanowires (invited)2009

    • Author(s)
      J. Motohisa, Hua, Y. Kobayashi
    • Organizer
      International Workshop on Photons and Spins in Nanostructures (IWPSN)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] シリコン基板上のInAsナノワイヤ縦型サラウンディングゲートFETの作製2009

    • Author(s)
      田中智隆, 冨岡克広, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Structural transition of InP nanowires in selective-area metalorganic vapor phase epitaxy2009

    • Author(s)
      Y.Kitauchi, K.Tomioka, Y.Kobayashi, S.Hara, T.Fukui, J.Motohisa
    • Organizer
      the 14th International Conference on Modulated Semiconductor Structures(MSS-14)
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111)substrate2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 3rd International Conference on One-dimensional Nanomaterials
    • Place of Presentation
      Atlanta, U.S.A.
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 熱ナノインプリントを利用した微細加工に関する検討2009

    • Author(s)
      井上理樹、佐藤拓也、池辺将之、福井孝志、本久順一
    • Organizer
      第44回応用物理学会北海道支部/第5回日本光学会北海道地区合同学術講演会
    • Place of Presentation
      函館
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Microprocesses and Nanotechnology Conference(MNC2009)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates2009

    • Author(s)
      T. Tanaka, K. Tomioka, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      the 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Position Controlled Growth of III-V Semiconductor Core-shell Nanowires Grown by Selective Area MOVPE and Their Device Applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      The 2009 Material Reseach Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs core-shell Nanowires2009

    • Author(s)
      S.K.Vazadwaj, J.Motohisa, S.Soundeswaran, T.Sato, B.Hua, M.van Kouwen, V.Zwiller, S.Haza, T.Fukui
    • Organizer
      The 3rd International Conference on One-dimensional Nanomaterials
    • Place of Presentation
      Atlanta, U.S.A.
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of Axial Heterostructures in III-V Nanowires by Selective-area MOVPE with Regrowth Method2009

    • Author(s)
      K.Tomioka, Y.Kobayashi, J.Motohisa, S.Hara, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Study on InAs Tubular Channel Nanowire FETs2009

    • Author(s)
      T. Sato, J. Motohisa, S. Hara, E. Sano, T. Fukui
    • Organizer
      The 3rd International Conference on One-Dimensional Nanomaterials (ICON 2009)
    • Place of Presentation
      Atlanta, Georgia, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selecrive-Area MOVPE2009

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      2009 International Conference on Solid State Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of a GaAs quantum well embedded in AlGaAs/GaAs hetero-structure nanowires by selective-area MOVPE2009

    • Author(s)
      A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Near-infrared lasing in GaAs/GaAsP coaxial core-shell nanowires(Invited)2009

    • Author(s)
      J.Motohisa, B.Hua, Y.Kobayashi
    • Organizer
      International Workshop on Photons and Spins in Nanostructures(IWPSN)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Application of Semiconductor Nanowires(Invited)2009

    • Author(s)
      J.Motohisa
    • Organizer
      International Conference on Nanoscience and Technology, China 2009(ChinaNANO 2009)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position-controlled growth of GaAs nanowires on Si(111) by selective-area metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] MOVPE選択成長法によるSi基板上のInAsナノワイヤ成長2008

    • Author(s)
      冨岡克広, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第55回応用物理学会関係連合講演会
    • Place of Presentation
      船橋
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Selective-Area MOVPE Growth of InGaAs Nanowires and Their Photoluminescence Characterization2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      the 27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V semiconductor epitaxial nanowires and their applications2008

    • Author(s)
      T. Fukui, S. Hara, K. Hiruma and J. Motohisa
    • Organizer
      The 16 th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Vertical III-V nanowire growth on Si substrate by selective-area MOVPE2008

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Near-Infrared lasers in GaAs/GaAsP coaxial core-shell nanowires2008

    • Author(s)
      B. Hua, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area MOVPE of InP/InGaAs air-hole arrays on InP for photonic crystal applications2008

    • Author(s)
      J. Motohisa, S. Hashimoto, J. Takeda, A. Tarumi, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 有機金属気相選択成長による半導体ナノワイヤの形成(招待講演)、2008

    • Author(s)
      本久順一
    • Organizer
      第38回結晶成長国内会議(NCCG-38)
    • Place of Presentation
      仙台
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長法によるInPナノワイヤ中のInAsP量子ドットの作製とその光学評価2008

    • Author(s)
      小林靖典, Maarten Kouwen, 福井孝志, Valery Zwiller, 本久順一
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長したInAsナノワイヤの縦型二端子測定2008

    • Author(s)
      田中智隆, 冨岡克広, 北内悠介, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長法による縦方向ヘテロ接合ナノワイヤの成長条件検討2008

    • Author(s)
      林田淳, 吉田浩惇, 佐藤拓也, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Catalyst-Free Growth and FET Application of (InGa)As Nanowires2008

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara, T. Fukui
    • Organizer
      the 66th Device Research Conference (DRC 2008)
    • Place of Presentation
      Santa Barbara, California, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InPナノワイヤを用いた横型FETの作製2008

    • Author(s)
      北内悠介、本久順一、登坂仁一郎、福井孝志
    • Organizer
      応用物理学会北海道支部講演会
    • Place of Presentation
      札幌
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Epitaxial III-V semiconductors : nanowires and nanotubes2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 4th Asian Confrence on Crystal Growth and Crystal Technology
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Optical Properties of InP/InAs Multi-Core Shell Nanowires Grown by Selective-Area MOVPE2008

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2008 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of GaAs nanowires using catalyst-free selective-area metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Hiruma, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 有機金属気相選択成長法による半導体ナノワイヤの成長とその成長機構2008

    • Author(s)
      比留間健之, 原真二郎, 本久順一, 福井孝志
    • Organizer
      化学工学会第40回秋季大会(SCEJ)
    • Place of Presentation
      仙台
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] 化合物半導体ナノワイヤとデバイス応用2008

    • Author(s)
      本久順一, 原真二郎, 比留間健之, 福井孝志
    • Organizer
      日本真空協会スパッタリングおよびプラズマプロセス技術部会第109回定例会
    • Place of Presentation
      東京
    • Year and Date
      2008-07-24
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Selective-area growth of InGaAs nanowires and their photoluminescence characterization2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa and T. Fukui
    • Organizer
      The 27 th Electronic Materials Symposium
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] 有機金属気相選択成長による半導体ナノワイヤの形成2008

    • Author(s)
      本久順一
    • Organizer
      第38回結晶成長国内会議(NCCG-38)
    • Place of Presentation
      仙台
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] 化合物半導体ナノワイヤとデバイス応用(招待講演)2008

    • Author(s)
      本久順一, 真二郎, 比留間健之, 福井孝志
    • Organizer
      日本真空協会スパッタリングおよびプラズマプロセス技術部会第109回定例会
    • Place of Presentation
      東京
    • Year and Date
      2008-07-24
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Catalyst-free growth and FET application of (InGa)As nanowires2008

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara and T. Fukui
    • Organizer
      The 66th Device Research Conference
    • Place of Presentation
      Santa Barbara, California, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V Semiconductor Nanowires2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication and Optical Characterization of InGaAs Nanowires by Selective-Area MOVPE2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      the 14th International Conference on Metal-Organic Vapor Phase Epitxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長法によるInGaAsナノワイヤの作製及び顕微PL測定による組成の評価2008

    • Author(s)
      佐藤拓也, 小林靖典, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第55回応用物理学会関係連合講演会
    • Place of Presentation
      船橋
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Fabrication and optical characterization of InGaAs nanowires by selective-area MOVPE2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V semiconductor nanowires2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] MOVPE選択成長法によるSi基板上のGaAs/AlGaAsコア・シェルナノワイヤの作製2008

    • Author(s)
      冨岡克広, 小林靖典, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Competitive growth process of tetrahedrons and hexagons during nanowire formation by metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Hiruma, K. Ikejiri, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
    • Organizer
      The third International Workshop on Nanowire Growth Mechanisms
    • Place of Presentation
      Duisburg, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      J. Motohisa, S. Hara, T. Fukui
    • Organizer
      2007 Virtual Conference on Nanoscale Science and Technology
    • Place of Presentation
      Fayetteville, Arkansas, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Formation and characterization of Fabry-Perot cavities in single GaAs nanowires2007

    • Author(s)
      B. Hua, J. motohisa, S. hara, T. Fukui
    • Organizer
      The 34th international conference on compound semiconductors
    • Place of Presentation
      Kyoto,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires and Their Device Applications, (Invited Paper)2007

    • Author(s)
      S. Hara, J. Motohisa, T. Fukui
    • Organizer
      2007 International Symposium on Advanced Silicon-Based Nano-Devices (ISASN 2007)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InP and InP/InAs multi-core shell nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, Premila. Mohan, J. Motohisa
    • Organizer
      International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Genova,Italy
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy2007

    • Author(s)
      J. Motohisa, T. Fukui, and S. Hara
    • Organizer
      Internationl Conference on Nano Science and Technology (ICN+T 2007)
    • Place of Presentation
      Stockholm
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      T. Fukui, P. Mohan, J. Motohisa
    • Organizer
      19th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Matsue,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V compound semiconductor nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2nd International Lund Workshop on Nanowire Growth Mechanisms
    • Place of Presentation
      Lund,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] (InGa)As Nanowire Field Effect Transistors2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
    • Organizer
      the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] Growth Characteristics of III-V Semiconductor Nanowires2007

    • Author(s)
      K. Hiruma, S. Hara, J. Motohisa, Takasi Fukui
    • Organizer
      The Second International Conference on One-dimensional Nanomaterials(ICON 2007)
    • Place of Presentation
      Malmo,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] (InGa) As Nanowire Field Effect Transistors2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
    • Organizer
      the 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V semiconductor nanowires and nanotubes grown by slective area metalorganic vapor phase epitaxy2007

    • Author(s)
      J. Motohisa, T. Fukui, S. Hara
    • Organizer
      Internationl Conference on Nano Science and Technology(ICN+T 2007)
    • Place of Presentation
      Stockholm,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy2007

    • Author(s)
      J. Motohisa, T. Fukui, S. Hara
    • Organizer
      Internationl Conference on Nano Science and Technology (ICN+T 2007)
    • Place of Presentation
      Stockholm, Sweden
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V Semiconductor Nanowires and Their Device Applications2007

    • Author(s)
      S. Hara, J. Motohisa, T.Fukui
    • Organizer
      The 2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
    • Place of Presentation
      Tokyo,Japan
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires and Their Device Applicationsモ,(Invited Paper)2007

    • Author(s)
      S. Hara, J. Motohisa and T. Fukui
    • Organizer
      2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] III-V semiconductor hetero-structure nanowires by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2007 International Conference on Solid State Devices and Materials(SSDM 2007)
    • Place of Presentation
      Tsukuba,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of InGaAs nanowires on InP(111)B substrates by selective-area MOVPE2007

    • Author(s)
      T. Sato, J. Noborisaka, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      The US Biennial Workshop on Organometallic Vapor Phase Epitaxy
    • Place of Presentation
      Salt Lake,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InP(111)B基板上に作製したInGaAsナノワイヤの評価2007

    • Author(s)
      佐藤拓也, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長法によるSi(111)基板上のIII-V族化合物半導体ナノワイヤ成長2007

    • Author(s)
      冨岡克広, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] MOVPE選択成長法により作製したInGaAs系ナノワイヤの電気特性評価2007

    • Author(s)
      登坂仁一郎, 佐藤拓也, 本久順一, 原真二郎, 福井孝志
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌
    • Data Source
      KAKENHI-PROJECT-19206031
  • [Presentation] InP/InAs core-shell nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      7th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices
    • Place of Presentation
      Bad Honnef,German
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position-controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-mismatched Substrates by Selective Area Metalorganic Vapor Phase Epitaxy2007

    • Author(s)
      K. Tomioka, J. Takeda, L. Yang, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      2007 MRS Spring Meeting
    • Place of Presentation
      San Francisco,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Design and Growth of Nanowire Nanocavity

    • Author(s)
      T. Wada, S. Hara, and J. Motohisa
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば市
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] III-V Semiconductor Nanowire Transistors and Light Emitting Deveices (Invited Paper)

    • Author(s)
      Junichi Motohisa
    • Organizer
      the 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
    • Place of Presentation
      Legend Hotel Daejeon (Korea)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23360129
  • [Presentation] GaAs/InGaAs/GaAs コアマルチシェルナノワイヤ共振器の評価

    • Author(s)
      和田 年弘, 原 真二郎, 本久 順一
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24360114
  • [Presentation] 間隔の広いInP系NWアレイと量子ドットの形成と評価

    • Author(s)
      柳瀬 祥吾, 原 真二郎, 本久 順一
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24360114
  • 1.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 0 results
  • 2.  FUKUI Takashi (30240641)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 128 results
  • 3.  SATO Taketomo (50343009)
    # of Collaborated Projects: 7 results
    # of Collaborated Products: 0 results
  • 4.  HARA Shinjiro (50374616)
    # of Collaborated Projects: 7 results
    # of Collaborated Products: 100 results
  • 5.  HASEGAWA Hideki (60001781)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 6.  KASAI Seiya (30312383)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 7.  冨岡 克広 (60519411)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 73 results
  • 8.  AKAZAWA Masamichi (30212400)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 9.  FUJIKURA Hajime (70271640)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 10.  SAITOH Toshiya (70241396)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 11.  IKEBE Masayuki (20374613)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 2 results
  • 12.  AMEMIYA Yoshihito (80250489)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 13.  KANESHIRO Chinami (30318993)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 14.  TAKEYAMA Mayumi (80236512)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 15.  IGARASHI Hajime (90212737)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  WATANABE Kota (20322828)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  SASAKURA Hirotaka (90374595)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  YATABE Zenji (00621773)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  SAWADA Takayuki (40113568)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  WU Nan-jan (00250481)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  SANO Eiichi (10333650)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  YANG Lin (60374708)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 23.  須田 善行 (70301942)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  古賀 裕明 (80519413)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  深田 直樹 (90302207)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  J. Wipakorn (40748216)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 27.  宮崎 剛 (50354147)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  松村 亮 (90806358)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  KLAR Peter Jens
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  ELM Matthias Thomas
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  KRUG VON NIDDA Hans-albrecht
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 32.  SEKI Shouhei
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 33.  韓 哲九
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 34.  安 海岩
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 35.  プリミーラ モハン
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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