Tomioka Katsuhiro 冨岡克広

… Alternative Names

TOMIOKA KATSUHIRO 冨岡克広

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Researcher Number	60519411
Other IDs
Affiliation (Current)	2023: 北海道大学, 情報科学研究院, 准教授
Affiliation (based on the past Project Information) *help	2019 – 2023: 北海道大学, 情報科学研究院, 准教授 2016 – 2018: 北海道大学, 情報科学研究科, 准教授 2017: 北海道大学, 大学院情報科学研究科, 准教授 2015: 北海道大学, 情報科学研究科, 助教 2015: 北海道大学, 大学院情報科学研究科, 助教
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electronic materials/Electric materials / Microdevices/Nanodevices / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 28:Nano/micro science and related fields
Keywords	Principal Investigator ナノワイヤ / トンネルFET / トランジスタ / 薄膜・量子構造 / FET / ナノワイヤ材料 / 半導体デバイス / 電気・電子材料 / 結晶成長 / 省エネルギー … More / ナノ材料 / III-V / 半導体ナノ構造 / 薄膜成長 / ダイオード / 半導体物性 / 電子・電気材料 / 超格子 / 共鳴トンネル輸送 / 縦型構造 / III-V族化合物半導体 / 集積技術 … More Except Principal Investigator 半導体ナノワイヤ / ナノワイヤ / 発光ダイオード / 有機金属気相成長 / 選択成長 / 化合物半導体 / 結晶成長 / 太陽電池 / LED / 光検出器 / フォトダイオード / シリコンフォトニクス / 有機金属気相選択成長 / 流量変調エピタキシー法 / アバランシェフォトダイオード / 量子ドット / 単一光子光源 / 偏光渦 / ベクトル光波 / ナノワイヤレーザ / シリコン / ゲルマニウム / トランジスタ Less

Development of nanowire hybrid integrated devicesPrincipal Investigator
- Principal Investigator
  
  冨岡克広
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hokkaido University
Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires
- Principal Investigator
  
  深田直樹
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  National Institute for Materials Science
Generation of Vector Beams using Semiconductor Nanowires
- Principal Investigator
  
  本久順一
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Demonstration of ultrafast resonant tunneling transistorPrincipal Investigator
- Principal Investigator
  
  Tomioka Katsuhiro
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hokkaido University
Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applicationsPrincipal Investigator
- Principal Investigator
  
  Tomioka Katsuhiro
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Hokkaido University
Study on Light-Emittind Devices on Si Substrates based on Semiconductor Nanowires
- Principal Investigator
  
  Motohisa Junichi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
A Novel Photodetector Utilizing Semiconductor Nanowires
- Principal Investigator
  
  Junichi Motohisa
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Research on tunnel FET using IV/III-V heterojunction toward circuit applicationPrincipal Investigator
- Principal Investigator
  
  Tomioka Katsuhiro
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Compound Semiconductor Nanowires and their Optical Device Applications
- Principal Investigator
  
  Fukui Takashi
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Hokkaido University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation Book Patent

[Book] Chapter 2 in Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing2018
- Author(s)
  Katsuhiro Tomioka
- Publisher
  Pan Stanford Publishing
- Data Source
  KAKENHI-PROJECT-16H06080
[Book] Novel Compound Semiconductor Nanowires; Materials, Devices, and Applications2017
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa Takashi Fukui
- Publisher
  Pan Stanford Publishing
- ISBN
  9814745766
- Data Source
  KAKENHI-PROJECT-16H06080
[Book] Handbook of Crystal Growth, Vol　I Chapter 18 "Growth of Semiconductor Nanocrystals"2015
- Author(s)
  Tomioka K, Fukui T.
- Total Pages
  46
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-23221007
[Book] Semiconductor Nanowire and Their Optical Applications, edited by G-C. Yi2012
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Total Pages
  36
- Publisher
  Wiley
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium2022
- Author(s)
  Akinobu Yoshida, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
- Journal Title
  
  Scientific Reports
  
  Volume: 12 Issue: 1
- DOI
  10.1038/s41598-022-05721-x
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] A logical switch to the vertical direction2021
- Author(s)
  Katsuhiro Tomioka
- Journal Title
  
  Compound Semiconductor
  
  Volume: V Pages: 40-45
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951
[Journal Article] InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一、福井孝志
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 120 (SDM2020-52) Pages: 13-16
- Data Source
  KAKENHI-PROJECT-19H02184
[Journal Article] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Journal Title
  
  IEEE SNW 2021 Technical Digest
  
  Volume: NA Pages: 51-52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951
[Journal Article] A logical switch to the vertical direction2021
- Author(s)
  Katsuhiro Tomioka
- Journal Title
  
  Compound Semiconductor
  
  Volume: V Pages: 40-45
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02184
[Journal Article] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Journal Title
  
  IEEE SNW 2021 Tech. Dig.
  
  Volume: － Pages: 51-52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02184
[Journal Article] （招待講演） InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一、福井孝志
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 120 Pages: 13-16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951
[Journal Article] Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si2020
- Author(s)
  Gamo Hironori、Tomioka Katsuhiro
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 41 Issue: 8 Pages: 1169-1172
- DOI
  10.1109/led.2020.3004157
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
[Journal Article] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020
- Author(s)
  Tomioka Katsuhiro、Gamo Hironori、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  IEEE IEDM Technical Digest
  
  Volume: IEDM-2020 Pages: 429-432
- DOI
  10.1109/iedm13553.2020.9371991
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
[Journal Article] Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs2020
- Author(s)
  Akamatsu Tomoya、Tomioka Katsuhiro、Motohisa Junichi
- Journal Title
  
  Nanotechnology
  
  Volume: 31 Issue: 39 Pages: 394003-394003
- DOI
  10.1088/1361-6528/ab9bd2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20H02176
[Journal Article] Selective-Area Growth of AlInAs Nanowires2020
- Author(s)
  Tai Yoshiki、Gamo Hironori、Motohisa Junichi、Tomioka Katsuhiro
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 6 Pages: 149-153
- DOI
  10.1149/09806.0149ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
[Journal Article] Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes2020
- Author(s)
  Tomioka Katsuhiro、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  Scientific Reports
  
  Volume: 10 Issue: 1
- DOI
  10.1038/s41598-020-67625-y
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] InGaAs-InP core?shell nanowire/Si junction for vertical tunnel field-effect transistor2020
- Author(s)
  Tomioka Katsuhiro、Ishizaka Fumiya、Motohisa Junichi、Fukui Takashi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 12 Pages: 123501-123501
- DOI
  10.1063/5.0014565
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] Vertical InGaAs Nanowire Array Photodiodes on Si2019
- Author(s)
  Chiba Kohei、Yoshida Akinobu、Tomioka Katsuhiro、Motohisa Junichi
- Journal Title
  
  ACS Photonics
  
  Volume: 6 Issue: 2 Pages: 260-264
- DOI
  10.1021/acsphotonics.8b01089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
[Journal Article] InP/InAsP/InPヘテロ構造ナノワイヤLEDの作製と評価2019
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 118 Pages: 247-250
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] Vertical Tunnel FET Technologies using III-V/Si heterojunciton2019
- Author(s)
  K. Tomioka, H. Gamo, J. Motohisa
- Journal Title
  
  ECS Transaction
  
  Volume: 92 Issue: 25 Pages: 71-78
- DOI
  10.1149/ma2019-02/25/1168
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] Heterogeneous integration of vertical III-V nanowires on Si and their transistor applications2019
- Author(s)
  冨岡克広
- Journal Title
  
  Oyo Buturi
  
  Volume: 88 Issue: 4 Pages: 245-251
- DOI
  10.11470/oubutsu.88.4_245
- NAID
  130007709428
- ISSN
  0369-8009, 2188-2290
- Year and Date
  2019-04-10
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
[Journal Article] Growth and characterization of GaAs nanowires on Ge(1?1?1) substrates by selective-area MOVPE2019
- Author(s)
  Minami Yusuke、Yoshida Akinobu、Motohisa Junichi、Tomioka Katsuhiro
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 506 Pages: 135-139
- DOI
  10.1016/j.jcrysgro.2018.10.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy2019
- Author(s)
  Motohisa Junichi、Kameda Hiroki、Sasaki Masahiro、Tomioka Katsuhiro
- Journal Title
  
  Nanotechnology
  
  Volume: 30 Issue: 13 Pages: 134002-134002
- DOI
  10.1088/1361-6528/aafce5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
[Journal Article] Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application2018
- Author(s)
  Gamo Hironori、Tomioka Katsuhiro
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 500 Pages: 58-62
- DOI
  10.1016/j.jcrysgro.2018.07.035
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform2017
- Author(s)
  Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa
- Journal Title
  
  AIP Advances
  
  Volume: 7 Issue: 12 Pages: 125304-125304
- DOI
  10.1063/1.4993689
- NAID
  120006380383
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080, KAKENHI-PROJECT-16K14221
[Journal Article] Growth of InGaAs Nanowires on Ge(111) by Selective-Area Metal-Organic Vapor-Phase Epitaxy2017
- Author(s)
  A. Yoshida, K. Tomioka, F. Ishizaka, and J. Motohisa
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 464 Pages: 75-79
- DOI
  10.1016/j.jcrysgro.2016.10.083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
[Journal Article] (Invited) Transistor application using vertical III-V nanowires on Si platform2017
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Journal Title
  
  ECS Transaction
  
  Volume: 80 Issue: 1 Pages: 43-52
- DOI
  10.1149/08001.0043ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] Growth and characterization of wurtzite InP/AlGaP core-multishell nanowires with AlGaP quantum well structures2017
- Author(s)
  F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 1 Pages: 010311-010311
- DOI
  10.7567/jjap.56.010311
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
[Journal Article] Growth of All-Wurtzite InP/AlInP Core-Multishell Nanowires2017
- Author(s)
  F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui
- Journal Title
  
  Nano Letters
  
  Volume: 17 Issue: 3 Pages: 1350-1355
- DOI
  10.1021/acs.nanolett.6b03727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
[Journal Article] Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer2016
- Author(s)
  Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 3 Pages: 035502-035502
- DOI
  10.7567/apex.9.035502
- NAID
  210000137834
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
[Journal Article] (Invited) Recent progress in vertical Si/III-V tunnel FETs: From fundamental to current-boosting technology2016
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 5 Pages: 127-134
- DOI
  10.1149/07505.0127ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] (Invited) Advances in steep-slope tunnel FETs2016
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
- Journal Title
  
  Proceedings of IEEE ESSDERC
  
  Volume: 2016 Pages: 392-402
- DOI
  10.1109/essderc.2016.7599670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06080
[Journal Article] Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Application2016
- Author(s)
  A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, and J. Motohisa
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 5 Pages: 265-270
- DOI
  10.1149/07505.0265ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
[Journal Article] Selective-area growth of InAs nanowires on Ge and vertical transistor application2015
- Author(s)
  Katsuhiro Tomioka, Fumiya Ishizaka, Takashi Fukui
- Journal Title
  
  Nano Letters
  
  Volume: 15 Issue: 11 Pages: 7253-7257
- DOI
  10.1021/acs.nanolett.5b02165
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
[Journal Article] Surrounding-Gate Tunnel FET Using InAs/Si Heterojunction2015
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Journal Title
  
  ECS Transaction
  
  Volume: 69 Pages: 109-118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] InGaAs axial-junction nanowaire-array solar cells2015
- Author(s)
  E. Nakai, M. Chen, M. Yoshimura, K. Tomioka, and T,Fukui
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 1 Pages: 015201-015201
- DOI
  10.7567/jjap.54.015201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
[Journal Article] Growth of wurtzite GaP in InP/GaP core-shell nanowires by Selective-area MOVPE2015
- Author(s)
  F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 411 Pages: 71-75
- DOI
  10.1016/j.jcrysgro.2014.10.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-23221007
[Journal Article] Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells2015
- Author(s)
  M. Chen, E. Nakai, K. Tomioka, and T.Fukui
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 1 Pages: 012301-012301
- DOI
  10.7567/apex.8.012301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
[Journal Article] Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area　growth2014
- Author(s)
  Katsuhiro Tomioka, Takashi Fukui
- Journal Title
  
  Journal of Physs D: Applied Physics
  
  Volume: 47 Issue: 39 Pages: 394001-394001
- DOI
  10.1088/0022-3727/47/39/394001
- NAID
  120005512025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] III-V族化合物半導体ナノワイヤ太陽電池2014
- Author(s)
  福井孝志、吉村正利、中井栄治、冨岡克広
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 41 Pages: 29-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2014
- Author(s)
  Katsuhiro Tomioka, Takashi Fukui
- Journal Title
  
  ECS Transaction
  
  Volume: 61 Pages: 81-89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2014
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 7
- DOI
  10.1063/1.4865921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] GaAs/InGaP Core-Multishell Nanowire-Array-Based Solar Cells2013
- Author(s)
  E. Nakai, M. Yoshimura, et al.
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 5R Pages: 055002-055002
- DOI
  10.7567/jjap.52.055002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
[Journal Article] Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer2013
- Author(s)
  M. Yoshimura, et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 5 Pages: 052301-052301
- DOI
  10.7567/apex.6.052301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
[Journal Article] Indium Phoshide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer2013
- Author(s)
  M. Yoshimura, et al.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 24
- DOI
  10.1063/1.4847355
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
[Journal Article] Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique2013
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
- Journal Title
  
  Nano Letters
  
  Volume: 13 Issue: 12 Pages: 5822-5826
- DOI
  10.1021/nl402447h
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] 半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用2013
- Author(s)
  冨岡克広、福井孝志
- Journal Title
  
  電子情報通信学会論文誌C
  
  Volume: J96-C Pages: 221-230
- NAID
  110009657215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Indium-Rich InGaP Nanowires Formed on InP(111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy2013
- Author(s)
  Fumiya Ishizaka, Keitaro Ikejiri, Katsuhiro Tomioka, and Takashi Fukui
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CH05-04CH05
- DOI
  10.7567/jjap.52.04ch05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
[Journal Article] Bidirectional Growth of Indium Phosphide Nanowires2012
- Author(s)
  Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
- Journal Title
  
  Nano Letters
  
  Volume: 12 Issue: 9 Pages: 4770-4774
- DOI
  10.1021/nl302202r
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
[Journal Article] A III-V nanowire channel on Si for high-performance vertical transistors2012
- Author(s)
  K. Tomioka, M. Yoshimura, T. Fukui
- Journal Title
  
  Nature
  
  Volume: 488 Issue: 7410 Pages: 189-192
- DOI
  10.1038/nature11293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy2012
- Author(s)
  T. Fukui, M. Yoshimura, et al.
- Journal Title
  
  AMBIO
  
  Volume: 41 (Supplement 2) Issue: S2 Pages: 119-124
- DOI
  10.1007/s13280-012-0266-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
[Journal Article] GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE2012
- Author(s)
  Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
- Journal Title
  
  Nanotechnology
  
  Volume: 24 Issue: 11 Pages: 115304-115304
- DOI
  10.1088/0957-4484/24/11/115304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
[Journal Article] 半導体ナノワイヤデバイス応用の新展開2012
- Author(s)
  冨岡克広、福井孝志
- Journal Title
  
  応用物理
  
  Volume: 81 Pages: 59-64
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses2012
- Author(s)
  Hirotaka Sakuma, Motonobu Tomoda, Paul H.Otsuka, Osamu Matsuda, Oliver B.Wright, Takashi Fukui, Katsuhiro Tomioka, Istvan A.Veres
- Journal Title
  
  APPLIED PHYSICS LETTERS
  
  Volume: 100 Issue: 13
- DOI
  10.1063/1.3696380
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00795, KAKENHI-PROJECT-22246012, KAKENHI-PROJECT-23221007
[Journal Article] Longitudinal ana transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy2012
- Author(s)
  笹倉弘理
- Journal Title
  
  Physical Review B
  
  Volume: 85 Issue: 7
- DOI
  10.1103/physrevb.85.075324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560001, KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-24560001
[Journal Article] III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (Invited)2011
- Author(s)
  K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui
- Journal Title
  
  IEEE J. Select. Topics Quan. Electron.
  
  Volume: 17 Issue: 4 Pages: 1112-1129
- DOI
  10.1109/jstqe.2010.2068280
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
[Journal Article] Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires2011
- Author(s)
  K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
- Journal Title
  
  Nano Lett.
  
  Volume: 11 Issue: 10 Pages: 4314-4318
- DOI
  10.1021/nl202365q
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007
[Journal Article] Selective-area growth of III-V nanowires and their applications (review paper)2011
- Author(s)
  K. Tomioka, K. Ikejiri, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui
- Journal Title
  
  J. Mater. Res.
  
  Volume: 26 Issue: 17 Pages: 2127-2141
- DOI
  10.1557/jmr.2011.103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
[Patent] マルチモードスイッチ素子2022
- Inventor(s)
  蒲生浩憲、冨岡克広
- Industrial Property Rights Holder
  国立大学法人北海道大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-048567
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-19H02184
[Patent] マルチモードスイッチ素子2022
- Inventor(s)
  蒲生浩憲、冨岡克広
- Industrial Property Rights Holder
  国立大学法人北海道大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-048567
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-19K21951
[Patent] Tunnel field effect transistor2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Overseas
- Data Source
  KAKENHI-PROJECT-19K21951
[Patent] Group III-V compound semiconductor nanowire, field effect transistor, and switching element2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Overseas
- Data Source
  KAKENHI-PROJECT-19H02184
[Patent] Group III-V compound semiconductor nanowire, field effect transistor, and switching element2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Overseas
- Data Source
  KAKENHI-PROJECT-19K21951
[Patent] トンネル電界効果トランジスタ2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Data Source
  KAKENHI-PROJECT-19K21951
[Patent] トンネル電界効果トランジスタ2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Data Source
  KAKENHI-PROJECT-19H02184
[Patent] Tunnel field effect transistor2019
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  北海道大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2019
- Overseas
- Data Source
  KAKENHI-PROJECT-19H02184
[Patent] TUNNEL FIELD EFFECT TRANSISTOR2018
- Inventor(s)
  Katsuhiro Tomioka, Takashi Fukui
- Industrial Property Rights Holder
  Katsuhiro Tomioka, Takashi Fukui
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-16H06080
[Patent] トンネル電界効果トランジスタ2017
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-543415
- Filing Date
  2017
- Overseas
- Data Source
  KAKENHI-PROJECT-16H06080
[Patent] TUNNEL FIELD EFFECT TRANSISTOR2016
- Inventor(s)
  Katsuhiro Tomioka, Takashi Fukui
- Industrial Property Rights Holder
  Katsuhiro Tomioka, Takashi Fukui
- Industrial Property Rights Type
  特許
- Filing Date
  2016
- Acquisition Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-16H06080
[Patent] トンネル電界効果トランジスタ2015
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-193196
- Filing Date
  2015-09-30
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2014-10-31
- Overseas
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2014-10-31
- Overseas
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2014-08-13
- Overseas
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014
- Inventor(s)
  冨岡克広、福井孝志
- Industrial Property Rights Holder
  冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Filing Date
  2014-08-12
- Overseas
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] トンネル電界効果トランジスタ、その製造方法およびスイッチ素子2013
- Inventor(s)
  2. 冨岡克広、福井孝志
- Industrial Property Rights Holder
  2. 冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-168048
- Filing Date
  2013-08-13
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] III-V族化合物ナノワイヤ、電界効果トランジスタおよびスイッチ素子2013
- Inventor(s)
  2. 冨岡克広、福井孝志
- Industrial Property Rights Holder
  2. 冨岡克広、福井孝志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-226675
- Filing Date
  2013-10-13
- Data Source
  KAKENHI-PROJECT-23221007
[Patent] 発光素子およびその製造方法2013
- Inventor(s)
  1. 福井孝志、石坂文哉、冨岡克広
- Industrial Property Rights Holder
  1. 福井孝志、石坂文哉、冨岡克広
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-138894
- Filing Date
  2013-07-02
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] ナノワイヤ縦型共鳴トンネル電界効果型トランジスタの作製2022
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第69回応用物理学会春季学術講演会、ハイブリッド・神奈川
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] ナノワイヤ縦型共鳴トンネル電界効果トランジスタの試作2022
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Characterization of GaSb epitaxial growth and InAs/GaSb core shell nanowires2022
- Author(s)
  Lian Chen, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
- Organizer
  第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] ナノワイヤ縦型共鳴トンネル電界効果トランジスタの試作2022
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] (Invited) Integration of III-V Nanowires on Si and their Device Applications2022
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Organizer
  International 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022), Online
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Characterization of GaSb epitaxial growth and InAs/GaSb core shell nanowires2022
- Author(s)
  Lian Chen, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
- Organizer
  第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] (Invited) Integration of III-V Nanowires on Si and their Device Applications2022
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Organizer
  International 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022), Online
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] ナノワイヤ縦型共鳴トンネル電界効果型トランジスタの作製2022
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第69回応用物理学会春季学術講演会、ハイブリッド・神奈川
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa
- Organizer
  2021 Silicon Nanoelectronics Workshop (SNW 2021), Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] （チュートリアル・招待講演）半導体ナノワイヤの成長とデバイス応用2021
- Author(s)
  本久順一, 冨岡克広
- Organizer
  第13回ナノ構造エピタキシャル成長講演会、オンライン・松山
- Invited
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤの接合構造と発光ダイオード特性の関係2021
- Author(s)
  木村峻、勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP nanowire light-emitting diodes: different junction geometry and their diode properties2021
- Author(s)
  Shun Kimura, Yu Katsumi, Hironori Gamo, Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2021 International Conference on Solid State Device and Materials (SSDM2021),Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] （招待講演）縦型トンネルトランジスタの高性能化2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一
- Organizer
  第85回半導体・集積回路技術シンポジウム、オンライン
- Invited
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa
- Organizer
  2021 Silicon Nanoelectronics Workshop (SNW 2021), Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021
- Author(s)
  小原康，冨岡克広，原真二郎，本久順一
- Organizer
  第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP nanowire light-emitting diodes: different junction geometry and their diode properties2021
- Author(s)
  Shun Kimura, Yu Katsumi, Hironori Gamo, Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2021 International Conference on Solid State Device and Materials (SSDM2021),Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] （招待講演）縦型トンネルトランジスタの高性能化2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一
- Organizer
  第85回半導体・集積回路技術シンポジウム、オンライン
- Invited
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] (Invited) Integration of III-V Nanowire on Si and Their Device Application2021
- Author(s)
  Katsuhiro Tomioka, Hironori Gamo, and Junichi Motohisa
- Organizer
  International Union of Materials Research Societies - International Conference in Asia 2021 (IUMRS-ICA 2021), Online, Jeju, Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si2021
- Author(s)
  Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021), Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021
- Author(s)
  小原康，冨岡克弘，原真二郎，本久順一
- Organizer
  第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] （招待講演） InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021
- Author(s)
  冨岡克広、蒲生浩憲、本久順一、福井孝志
- Organizer
  2020年度電子情報通信学会シリコン材料・デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] (Invited) Integration of III-V Nanowire on Si and Their Device Application2021
- Author(s)
  Katsuhiro Tomioka, Hironori Gamo, and Junichi Motohisa
- Organizer
  International Union of Materials Research Societies - International Conference in Asia 2021 (IUMRS-ICA 2021), Online, Jeju, Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] （チュートリアル・招待講演）半導体ナノワイヤの成長とデバイス応用2021
- Author(s)
  本久順一, 冨岡克広
- Organizer
  第13回ナノ構造エピタキシャル成長講演会、オンライン・松山
- Invited
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si2021
- Author(s)
  Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021), Online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Si上のInAs/GaSbコアシェルナノワイヤ縦型サラウンディングゲートトランジスタの試作2021
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 半導体ナノワイヤの成長とデバイス応用(チュートリアル)2021
- Author(s)
  本久順一, 冨岡克広
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] InPナノワイヤ縦型トンネルFETの作製2020
- Author(s)
  勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020
- Author(s)
  Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui
- Organizer
  66th International Electron Devices Meeting (IEDM 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長2020
- Author(s)
  蒲生浩憲、冨岡克広
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長2020
- Author(s)
  蒲生浩憲、冨岡克広
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Selective-Area Growth of AlInAs Nanowires2020
- Author(s)
  Y. Tai, J. Motohisa, K. Tomioka
- Organizer
  Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Selective-area growth of InGaAs/GaSb core-shell nanowires on Si2020
- Author(s)
  Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa
- Organizer
  2020 International Conference on Solid State Device and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Selective-Area Growth of AlInAs Nanowires2020
- Author(s)
  Y. Tai, J. Motohisa, K. Tomioka
- Organizer
  Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020
- Author(s)
  田井良樹、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Organizer
  The 20th International Meeting on Information Display (IMID 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020
- Author(s)
  田井良樹、赤松知弥、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長と電気特性2020
- Author(s)
  蒲生浩憲、陳 栎安、勝見悠、本久順一、冨岡克広
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02176
[Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020
- Author(s)
  田井良樹、赤松知弥、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020
- Author(s)
  Katsuhiro Tomioka and Junichi Motohisa
- Organizer
  The 20th International Meeting on Information Display (IMID 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] III-V族化合物半導体ナノワイヤチャネルの電子素子応用2019
- Author(s)
  冨岡克広
- Organizer
  第24回半導体におけるスピン工学の基礎と応用(PASPS-24)
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019
- Author(s)
  Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019
- Author(s)
  Tomoya Akamatsu, Masahiro Sasaki, Hiroki Kameda, Katsuhiro Tomioka, and Junichi Motohisa
- Organizer
  Nanowire Weak 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019
- Author(s)
  K. Tomioka, J. Motohisa
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019
- Author(s)
  H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP/InAsP/InPヘテロ構造ナノワイヤLEDの作製と評価2019
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  2018年度電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019
- Author(s)
  T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019
- Author(s)
  Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs2019
- Author(s)
  K. Tomioka, A. Yoshida, H. Gamo
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Demonstration of InAs nanowire vertical transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] アニールによるInPナノワイヤ直径微細化2019
- Author(s)
  佐々木正尋、冨岡克広、本久順一
- Organizer
  第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019
- Author(s)
  Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤ縦型サラウンディングゲートトランジスタの作製2019
- Author(s)
  勝見悠、蒲生浩憲、佐々木正尋、本久順一、冨岡克広
- Organizer
  第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019
- Author(s)
  T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019
- Author(s)
  Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Si上のInAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタ高性能化の検討2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会、函館、1/5 - 6 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019
- Author(s)
  K. Tomioka, H. Gamo, J. Motohisa
- Organizer
  236th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Si上のIII-Vナノワイヤ選択成長とトランジスタ作製2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  応用物理学会界面ナノ電子化学研究会　第4回ポスター発表展、東京、3/11 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019
- Author(s)
  赤松知弥、佐々木正尋、冨岡克広、本久順一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] III-V族化合物半導体ナノワイヤチャネルの電子素子応用2019
- Author(s)
  冨岡克広
- Organizer
  第24回半導体におけるスピン工学の基礎と応用(PASPS-24)
- Invited
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019
- Author(s)
  K. Tomioka, H. Gamo, J. Motohisa
- Organizer
  236th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs2019
- Author(s)
  K. Tomioka, A. Yoshida, H. Gamo
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019
- Author(s)
  蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Si上InGaAs/GaSbコアシェルナノワイヤ選択成長2019
- Author(s)
  蒲生浩憲、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Si上InGaAs/GaSbコアシェルナノワイヤ選択成長2019
- Author(s)
  蒲生浩憲、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019
- Author(s)
  勝見悠、蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019
- Author(s)
  Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K.Tomioka
- Organizer
  32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019
- Author(s)
  H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
- Organizer
  International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K.Tomioka
- Organizer
  32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019
- Author(s)
  蒲生浩憲、赤松知弥、本久順一、冨岡克広
- Organizer
  The 38th Electronic Materials Symposium (EMS 38)
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] Ge(111)上GaAs/AlGaAs/GaAsコアシェルナノワイヤの電気特性2019
- Author(s)
  南祐輔、本久順一、冨岡克広
- Organizer
  第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InAs/InPコアシェルナノワイヤ/Si接合界面による縦型トンネルFETの作製2019
- Author(s)
  蒲生浩憲、本久順一、冨岡克広
- Organizer
  第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019
- Author(s)
  Junichi Motohisa and Katsuhiro Tomioka
- Organizer
  2019 International Workshop on Physics of Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019
- Author(s)
  Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Nanowire Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019
- Author(s)
  K. Tomioka, J. Motohisa
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02184
[Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019
- Author(s)
  赤松知弥, 佐々木正尋, 冨岡克広, 本久順一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Demonstration of InAs nanowire vertical transistors2019
- Author(s)
  H. Gamo, J. Motohisa, K. Tomioka
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21951
[Presentation] アニールによるInPナノワイヤ直径微細化2019
- Author(s)
  佐々木正尋、冨岡克広、本久順一
- Organizer
  第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会、函館、1/5 - 6 (2019)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InGaAs nanowire/Ge heterojunction Esaki tunnel diodes2018
- Author(s)
  A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 -13 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE2018
- Author(s)
  Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018
- Author(s)
  佐々木正尋、千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会、名古屋、9/18- 21 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InPナノワイヤLEDの温度依存性評価2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  第79回応用物理学会秋季学術講演会、名古屋、9/18 - 21 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会、名古屋、9/18- 21 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018
- Author(s)
  M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Vertical GaAs-InGaP core-shell nanowires on Si by selective-area growth2018
- Author(s)
  K. Tomioka, A. Yoshida, F. Ishizaka, J. Motohisa
- Organizer
  Nanowire Week 2018, Hamilton, Canada, June 11 -15 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si上InAsナノワイヤ縦型FET高性能化の検討2018
- Author(s)
  蒲生浩憲、冨岡克広、吉田旭伸、千葉康平、本久順一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si上のInAsナノワイヤ縦型サラウンディングゲートトランジスタの高性能化2018
- Author(s)
  蒲生浩憲、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会、名古屋、9/18 - 21 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  The 37th Electronic Materials Symposium (EMS 37)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Characterization of GaAs-InGaP core-multishell nanowires on Si by selective-area MOVPE2018
- Author(s)
  K. Tomioka, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Integration of III-V nanowires on Si and their transistor applications (Plenary)2018
- Author(s)
  Katsuhiro Tomioka
- Organizer
  22nd International Conference on Advanced Materials, Rome, Italy, Dec. 10-12 (2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Electroluminescence from InP-based Heterostructure Nanowires2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Ge上InGaAsナノワイヤの組成評価と縦型素子応用2018
- Author(s)
  吉田旭伸、冨岡克広、千葉康平、本久順一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018
- Author(s)
  佐々木正尋、千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Vertical FETs using pulse-doped InAs nanowires on Si2018
- Author(s)
  H. Gamo, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  Nanowire Week 2018, Hamilton, Canada, June 11 - 15 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Scaling Effect on Vertical FETs using III-V Nanowire-Channels2018
- Author(s)
  K. Tomioka, H. Gamou, A. Yoshida, J. Motohisa
- Organizer
  Compound Semiconductor Week 2018 (CSW 2018), Boston, USA, May 29 - June 1 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Study on emission mechanism in InP-based nanowire LEDs2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Nanowire Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018
- Author(s)
  赤松知弥、亀田滉貴、佐々木正尋、冨岡克広、本久順一
- Organizer
  The 37th Electronic Materials Symposium (EMS 37)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Electroluminescence from InP-based Heterostructure Nanowiress2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 - 13 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第10回　ナノ構造・エピタキシャル成長講演会、名古屋、7/12- 13 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Shallow and heavy doping of Ge by MOVPE2018
- Author(s)
  K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Heterogeneous integration of InGaAs nanowires with various In compositions on Ge(111) substrates for vertical transistor application2018
- Author(s)
  A. Yoshida, K. Tomioka, K. Chiba, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area growth of pulse-doped InAs related nanowire-channels on Si2018
- Author(s)
  H. Gamou, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si上の垂直GaAs-InGaPコアマルチシェルナノワイヤの異種集積2018
- Author(s)
  冨岡克広、本久順一
- Organizer
  The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Study on Emission Mechanisms in InP-based Nanowire LEDs2018
- Author(s)
  Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
- Organizer
  Nanowire Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Study on emission mechanism in InP-based nanowire LEDs2018
- Author(s)
  J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
- Organizer
  Nanowire Week 2018, Hamilton, Canada, June 11 -15 (2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018
- Author(s)
  M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] InPナノワイヤLEDの温度依存性評価2018
- Author(s)
  本久順一、亀田滉貴、佐々木正尋、冨岡克広
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018
- Author(s)
  Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017
- Author(s)
  K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] InAsP 埋め込み InP ナノワイヤにおける発光波長制御2017
- Author(s)
  佐々木正尋、千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第9回　ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] 太陽光発電応用に向けたGe(111)基板上GaAsナノワイヤのMOVPE選択成長2017
- Author(s)
  南祐輔、吉田旭伸、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Current enhancement of tunnel FET using modulation-doped nanowire-channels2017
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa
- Organizer
  22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Heterogeneous integration of vertical InGaAs nanowires on Ge (111) substrates by selective-area growth2017
- Author(s)
  A. Yoshida, Y. Minami, K. Tomioka, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017
- Author(s)
  K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Vertical III-V nanowires on Si and transistor applications2017
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017
- Author(s)
  H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
- Organizer
  22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017
- Author(s)
  H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
- Organizer
  22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Nanowire quantum dots emitting at telecom wavelength2017
- Author(s)
  M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  The 24th Congress of the International Commission for Optics (ICO-24)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017
- Author(s)
  [8].千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Nanowire quantum dots emitting at telecom wavelength2017
- Author(s)
  M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
- Organizer
  The 24th Congress of the International Commission for Optics (ICO-24)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017
- Author(s)
  千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Ge(111)基板上InGaAsナノワイヤ選択成長2017
- Author(s)
  吉田旭伸、南祐輔、千葉康平、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] MOVPE選択成長法によるGe(111)基板上のGaAsナノワイヤ成長2017
- Author(s)
  南祐輔、吉田旭伸、冨岡克広、本久順一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川、日本）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017
- Author(s)
  千葉康平、吉田旭伸、冨岡克広、本久順一：
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017
- Author(s)
  佐々木正尋、千葉康平、冨岡克広、本久順一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03223
[Presentation] Vertical InGaAs nanowire photodiode array on Si2017
- Author(s)
  K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  MRS fall meeting 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017
- Author(s)
  K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
- Organizer
  30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Ge(111) 基板上の GaAs ナノワイヤ選択成長2017
- Author(s)
  南祐輔、吉田旭伸、冨岡克広、本久順一
- Organizer
  第9回　ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Vertical InGaAs nanowire photodiode array on Si2017
- Author(s)
  K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  MRS fall meeting 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Transistor applications using vertical III-V nanowires on Si platform2017
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  232rd ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Composition control of InGaAs nanowires on Ge(111) substrates by selective-area growth2017
- Author(s)
  A. Yoshida, K. Chiba, Y. Minami, K. Tomioka, J. Motohisa
- Organizer
  30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Ge上InGaAsナノワイヤ選択成長と組成制御2017
- Author(s)
  吉田旭伸、冨岡克広、石坂文哉、本久順一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川、日本）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] 半導体ナノワイヤ選択成長と電子デバイス応用2017
- Author(s)
  冨岡克広、本久順一
- Organizer
  第9回　ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017
- Author(s)
  千葉康平、吉田旭伸、冨岡克広、本久順一
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Radial modulation-doped nanowire channel for millivolt switch2017
- Author(s)
  K. Tomioka, K. Chiba, A. Yoshida, J. Motohisa
- Organizer
  MRS fall meeting 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017
- Author(s)
  K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Phase transition from Zinc Blende to Wurtzite and green-yellow emission of AlInP grown by crystal structure transfer method (Invited)2017
- Author(s)
  Takashi Fukui, Yoshihiro Hiraya, Fumiya Ishizaka, and Katsuhiro Tomioka
- Organizer
  13th Sweden - Japan QNANO Workshop
- Place of Presentation
  PACIFICO Yokohama (Yokohama, Japan)
- Year and Date
  2017-03-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] III-V族化合物半導体ナノワイヤ縦型トランジスタのチャネル長スケーリング効果2017
- Author(s)
  冨岡克広、吉田旭伸、南祐輔、石坂文哉
- Organizer
  The 36th Electronic Materials Symposium (EMS 36)
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] MOVPE選択成長法によりナノワイヤ成長とデバイス応用2017
- Author(s)
  冨岡克広、本久順一
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area growth of GaAs nanowires on Ge(111) substrates2017
- Author(s)
  Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa
- Organizer
  22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017
- Author(s)
  K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
- Organizer
  30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area growth of vertical InGaAs nanowires on Ge(111) for transistor applications2016
- Author(s)
  A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
- Place of Presentation
  Hawaii Convention Center (Honolulu, USA)
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si基板上InGaAsナノワイヤの組成制御2016
- Author(s)
  千葉康平、冨岡克広、石坂文哉、吉田旭伸、本久順一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟、日本)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Si基板上InGaAsナノワイヤの組成制御2016
- Author(s)
  千葉康平、冨岡克広、石坂文哉、吉田旭伸、本久順一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Selective-area growth of InGaAs-based core-multishell nanowires on Si(111) with modulation-doped layer toward tunnel FETs2016
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center (Aichi, Japan)
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective area growth of III-V nanowires on Si and their transistor applications (Invited)2016
- Author(s)
  K. Tomioka
- Organizer
  2016 HU-SNU Joint Workshop
- Place of Presentation
  Hokkaido University (Sapporo, Japan)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Recent progress in vertical Si/III-V tunnel FETs: from fundamentals to current boosting technology (Invited)2016
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
- Place of Presentation
  Hawaii Convention Center (Honolulu, USA)
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016
- Author(s)
  Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa, and Takashi Fukui
- Organizer
  The 35th Electronic Materials Symposium (EMS 35)
- Place of Presentation
  Laforet Shiga (Moriyama, Japan)
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016
- Author(s)
  K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
- Place of Presentation
  Hawaii Convention Center (Honolulu, USA)
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Growth of Wurtzite AlInP in InP/AlInP Core-Shell Nanowires by Crystal Structure Transfer Method2016
- Author(s)
  F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui
- Organizer
  The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
- Place of Presentation
  Sheraton San Diego Hotel & Marina (San Diego, USA)
- Year and Date
  2016-07-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] High-performance InGaAs/Si tunnel FETs using core-multishell nanowire-channel2016
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
- Organizer
  2016 MRS Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center (Boston, USA)
- Year and Date
  2016-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area growth of III-V nanowires on Si and transistor applications (Invited)2016
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  The Eighth International Conference on Low Dimensional Structures and Devices (LDSD 2016)
- Place of Presentation
  IBEROSTAR Paraiso Beach (Mayan Riviera, Mexico)
- Year and Date
  2016-08-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] InGaAs/Si heterojunction tunnel FET with modulation-doped channel2016
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba International Congress Center (Tsukuba, Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy2016
- Author(s)
  A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, T. Fukui
- Organizer
  The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
- Place of Presentation
  Sheraton San Diego Hotel & Marina (San Diego, USA)
- Year and Date
  2016-07-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] ウルツ鉱構造InP/AlInPコアマルチシェルナノワイヤの構造及び光学特性評価2016
- Author(s)
  石坂文哉、平谷佳大、冨岡克広、本久順一、福井孝志
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ(新潟、日本)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016
- Author(s)
  K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
- Organizer
  PRiME 2016, 230th Meeting of The Electrochemical Society (ECS 230)
- Place of Presentation
  Honolulu
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Heterogeneous Integration of InGaAs-Related Nanowires on Si and Their Device Applications (Invited)2016
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
- Organizer
  The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
- Place of Presentation
  Sheraton San Diego Hotel & Marina (San Diego, USA)
- Year and Date
  2016-07-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016
- Author(s)
  K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center (Nagoya, Japan)
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Heterogeneous integration of vertical InxGa1-xAs nanowires on Ge(111) substrates by selective-area MOVPE2016
- Author(s)
  A. Yoshida, F. Ishizaka, K. Tomioka, J. Motohisa
- Organizer
  29th International Microprocesses and Nanotechnology Conference (MNC 2016)
- Place of Presentation
  ANA Crowne Plaza Kyoto (Kyoto, Japan)
- Year and Date
  2016-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016
- Author(s)
  K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] III-V semiconductor nanowire hetero-epitaxy on Si, Ge, poly-Si and graphene (Invited)2016
- Author(s)
  T. Fukui and K. Tomioka
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center (Aichi, Japan)
- Year and Date
  2016-08-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016
- Author(s)
  Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa
- Organizer
  The 35th Electronic Materials Symposium (EMS 35)
- Place of Presentation
  Moriyama
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16K14221
[Presentation] Advances in Steep-Slope Tunnel FETs (Invited)2016
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  ESSCIRC-ESSDERC 2016
- Place of Presentation
  Swisstech Convention Centre (Lausanne, Switzerland)
- Year and Date
  2016-09-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Structural and Optical Properties of Wurtzite InP/AlInP Core-Multishell Nanowires2016
- Author(s)
  F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba International Congress Center (Tsukuba, Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06080
[Presentation] Selective-Area Growth of Vertical InAs Nanowires on Ge(111)2015
- Author(s)
  Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  Moscone West, San Francisco, California, USA
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires2015
- Author(s)
  F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center, Sapporo Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Free-Standing InP Nanowire Array and Their Optical Properties toward Resource Saving Solar Cells2015
- Author(s)
  MuYi Chen, Eiji Nakai, Katsuhiro Tomioka, Takashi Fukui
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  Moscone West, San Francisco, California, USA
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Recent progress in vertical TFET using III-V/Si heterojunction2015
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  Steep Transistors Workshop
- Place of Presentation
  University of Notre Dame, Notre Dame, USA
- Year and Date
  2015-10-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications2015
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  The 20th American Conference on Crystal Growth and Epitaxy and The 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy
- Place of Presentation
  Big Sky resort Hotel, Big Sky, Montana, USA
- Year and Date
  2015-08-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertical III-V nanowire transistors for future low-power switches2015
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  12th Sweden - Japan QNANO Workshop,
- Place of Presentation
  Hjortviken, Hindas, Sweden
- Year and Date
  2015-09-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V nanowire channel on Si: From high-performance Vertical FET to steep-slope device2015
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  2015 International Symposium on VLSI Technology, Systems and Applications (2015 VLSI-TSA)
- Place of Presentation
  Ambassador Hotel Hsinchu, Hsinchu, Taiwan
- Year and Date
  2015-04-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Semiconductor nanowire array grown by selective area epitaxy and their applications2015
- Author(s)
  T. Fukui, F. Ishizaka and K. Tomioka
- Organizer
  The International Chemical Congress of Pacific Basin Societies 2015
- Place of Presentation
  Honolulu Convention Center, Hawaii, USA
- Year and Date
  2015-12-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Steep Turn-On Property of Vertical Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015
- Author(s)
  K. Tomioka, F. Ishizaka, T. Fukui, J. Motohisa
- Organizer
  2015 MRS Fall Meeting
- Place of Presentation
  Sheraton Boston, Massachusetts, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertically Aligned Semiconductor Nanowire Array and Their Applications2015
- Author(s)
  T. Fukui, F. Ishizaka and K. Tomioka
- Organizer
  Compound Semiconductor Week 2015
- Place of Presentation
  University of California Santa Barbara, Santa Barbara, USA
- Year and Date
  2015-06-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Structural and Optical Properties of Wurtzite AlInP Grown on Wurtzite InP Nanowires2015
- Author(s)
  F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
- Organizer
  2015 MRS Fall Meeting
- Place of Presentation
  Sheraton Boston, Massachusetts, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Growth of AlGaP and AlInP on GaN Substrates Toward Transferring Wurtzite Structure2015
- Author(s)
  Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
- Organizer
  Compound Semiconductor Week 2015
- Place of Presentation
  University of California Santa Barbara, USA
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Semiconductor Nanowires Grown by Selective Area MOVPE and Their Device Applications2015
- Author(s)
  T. Fukui, F. Ishizaka and K. Tomioka
- Organizer
  5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Lakeshore Hotel, Hsinchu, Taiwan
- Year and Date
  2015-09-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2015
- Author(s)
  K. Tomioka, J. Motohisa, T. Fukui
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix Convention Center, Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015
- Author(s)
  K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center, Sapporo Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Highly Conductive InAs Nanowire Vertical Transistors on Si2013
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
- Organizer
  MRS spring meeting 2013
- Place of Presentation
  Moscone West Convention Center, San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] ITO/p-InP Heterojunction NW-Array Solar Cells2013
- Author(s)
  M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
- Organizer
  TUM-IAS Focus Workshop
- Place of Presentation
  Technische Universitat Munchen, Munich, Germany,
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  IUMRS ICAM
- Place of Presentation
  Qingdao International Convention Center, Qingdao, China
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Nanowire/Si Heterojunction Tunnel Field-Effect Transistors2013
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  the 32st Electronic Materials Symposium (EMS-32)
- Place of Presentation
  Laforet Biwako, Shiga, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Growth of Wurtzite InP/GaP Core-shell Nanowires by Selective-area Metal Organic Vapor Phase Epitaxy2013
- Author(s)
  F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
- Organizer
  the 32st Electronic Materials Symposium (EMS-32)
- Place of Presentation
  Laforet, Biwako, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  2013 Conference on Lasers and Electro-Optics (CREO:2013)
- Place of Presentation
  San Jose Convention Center, San Jose , USA,
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Zn-compensating effect of channel of InGaAs nanowire/Si heterojunction tunnel FET and steep-turn on switching property2013
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
- Organizer
  E-MRS 2013 Spring Meeting
- Place of Presentation
  Congress Center, Strasbourg, France
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Wurtzite InP/GaP core-shell nanowires toward direct band gap transition2013
- Author(s)
  F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
- Organizer
  the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
- Place of Presentation
  Imperial Palase Hotel, Annecy, France
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  TMU-IAS Focus Workshop
- Place of Presentation
  Technische Universitat Munchen, Munich, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Demonstration of P-Channel Tunnel FET Using Zn-Doped InAs Nanowire/Si Heterojunction and Doping Effect2013
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, and Takashi Fukui
- Organizer
  MRS fall meeting 2013
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Compound Semiconductor Nanowire Solar Cells2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
- Organizer
  Nanowires 2013
- Place of Presentation
  Weizman Institute of Science, Rehovot, Israel
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] High-performance III-V nanowire transistors on silicon2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  The Sweden-Japan Workshop on Quantum Nano-Physics and Electronics(QNANO2013)
- Place of Presentation
  東京大学（東京）
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertical III-V Nanowire-Channel on Si2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton San Francisco Union Square, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V nanowire channels on Si; vertical FET applications2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  2013 Silicon nanoelectronics Workshop (SNW 2013)
- Place of Presentation
  Rihga Royal Hotel Kyoto, Kyoto, KYoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V semiconductor nanowires and their photovoltaic device applications2013
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
- Organizer
  12th International Conference on Atomically Controlled Surface, Interface and Nanostructures(ACSIN-12)
- Place of Presentation
  Tsukuba Convention Center, Tsukuba, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of III-V nanowires on Si and their applications2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  Kobe Convantion Center, Kobe, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] InGaAs axial junction nanowire array solar cells with AlInP passivation layer2013
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
- Organizer
  the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
- Place of Presentation
  Imperial Palase Hotel, Annecy, France
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication and Characterization of InGaAs Axial Junction Nanowire Array Solar Cells2013
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
- Organizer
  26th International Microprocesses and Nanotechnology Conference (MNC2013)
- Place of Presentation
  Roiton Sapporo, Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] InGaAs nanowire FETs on Si and steep subthreshold-slope transistors2013
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)
- Place of Presentation
  Hakodate Kokusai Hotal, Hakodate, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V/Si Heterojunctions for Steep Subthreshold-Slope Transistor2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  Third Berkeley Symposium on Energy Efficient Electronic Systems
- Place of Presentation
  University of California Berkeley Banato Hall, Berkeley, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch2013
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui
- Organizer
  2013 International Electron Devices Meeting
- Place of Presentation
  Washington Hilton, Washington DC, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] ITO/p-InP Hetero-Junction NW-Array Solar Cells2013
- Author(s)
  M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
- Organizer
  the 2013 Europe Material Research Society (E-MRS) Spring Meeting
- Place of Presentation
  Cogress Center, Strasbourg, France
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si2013
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  71st Device Research Conference (DRC 2013)
- Place of Presentation
  Notre Dame University, Notre Dome, USA
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication of ITO/p-InP hetero-junction nanowire-array solar cells2013
- Author(s)
  M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
- Organizer
  the 32st Electronic Materials Symposium (EMS-32)
- Place of Presentation
  Laforet Biwko, Shiga, Japan
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Bi-directional growth of Zn-doped InP nanowires by selective-area MOVPE2012
- Author(s)
  K. Ikejiri, K. Tomioka, and T. Fukui
- Organizer
  MRS Spring Meeting
- Place of Presentation
  San Fransisco's Moscone West Convention Hall(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] First demonstration of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2012
- Author(s)
  K. Tomioka, M. Yoshimura, and T. Fukui
- Organizer
  MRS 2012 Fall meeting
- Place of Presentation
  Haynes Convention Center Boston(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Steep-slope tunnel field-effect transistors using III-V nanowire/Si heterojunction2012
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  IEEE VLSI symposia
- Place of Presentation
  Hilton Hawaian Village(USA)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Compound Semiconductor Nanowire Solar Cells2012
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  The 16th International Conference on Metal- Organic Vapor Phase Epitaxy (ICMOVPE-XVI),
- Place of Presentation
  Paradise Hotel Busan(KOREA)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] InP/AlInP core-multishell nanowire array solar cells2012
- Author(s)
  M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
- Organizer
  the 39th Internal Symposium on Compound Semiconductor
- Place of Presentation
  University of Calfornia Santa Barbara(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Bi-directional growth of InP nanowires by selective-area MOVPE2012
- Author(s)
  K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui
- Organizer
  the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
- Place of Presentation
  The University of Queensland(Australia)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Flexible InP nanowire array obtained by epitaxial growth and peeling off process for solar cell application2012
- Author(s)
  T. Endo, E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
- Organizer
  25th International Microprocesses and Nanotechnology Conference (MNC 2012)
- Place of Presentation
  神戸メリケンパークオリエンタルホテル（神戸市
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] GaAs/InGaP core-multishell nanowire array solar cells by selective-area metal organic vapor phase epitaxy2012
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka, and T.Fukui
- Organizer
  MRS 2012 Fall meeting
- Place of Presentation
  Haynes Convention Center Boston(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices2012
- Author(s)
  K. Tomioka, M. Yoshimura, and T. Fukui
- Organizer
  The 16th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Place of Presentation
  Paradise Hotel Busan(KOREA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of III-V nanowires on Si and their applications2012
- Author(s)
  K. Tomioka, T. Fukui
- Organizer
  25th International Microprocesses and Nanotechnology Conference (MNC 2012)
- Place of Presentation
  神戸メリケンパークオリエンタルホテル（神戸市）
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Compound Semiconductor Nanowire Solar Cells2012
- Author(s)
  Takashi Fukui, Keitaro Ikejiri, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
- Place of Presentation
  The University of Queensland(Australia)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Realization of steep-slope behavior in tunnel FETs using InAs nanowire/Si heterojunction2012
- Author(s)
  K. Tomioka and T. Fukui
- Organizer
  MRS spring meeting
- Place of Presentation
  San Fransisco's Moscone West Convention Hall(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] InGaP Nanowires grown by Selective-Area MOVPE2012
- Author(s)
  F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012),
- Place of Presentation
  京都国際会議場（京都市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] GaAs core-shell nanowire array solar cells on masked GaAs (111)B substrates2012
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
- Organizer
  9th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS)
- Place of Presentation
  Eindhoven University of Technology(Netherlands)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Compound Semiconductor Nanowire Solar Cells2012
- Author(s)
  Takashi Fukui, Masatoshi Yoshimura, Takahito Endo, Eiji Nakai and Katsuhiro Tomioka
- Organizer
  MRS 2012 Fall meeting
- Place of Presentation
  Haynes Convention Center Boston(USA)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] First demonstration of tunnel field-effect transistor using InGaAs/Si junction2012
- Author(s)
  K. Tomioka, M. Yoshimura, T. Fukui
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM 2012)
- Place of Presentation
  京都国際会議場（京都市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V semiconductor nanowires and their electronics and photonic device applications2011
- Author(s)
  T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
- Organizer
  Japan-Sweden QNANO Workshop
- Place of Presentation
  Clarion Hotel Visby (Sweden)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertical In0.7Ga0.3As Nanowire Surrounding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011
- Author(s)
  K. Tomioka, M, Yoshimura, and T. Fukui
- Organizer
  2011 IEEE International Electron Devices Meeting
- Place of Presentation
  Hilton Washington（USA）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication of InP Nanowire Array Solar Cells using Selective-Area Metal-Organic Vapor Phase Epitaxy2011
- Author(s)
  M. Yoshimura, K. Tomioka, E. Nakai, and T. Fukui
- Organizer
  JSPS-RSAS Joint Conference “Capturing the Sun”
- Place of Presentation
  Royal Swedish Academy of Science, Stockholm(Sweden)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication and Optical Property of GaAs Nanowire Array for Solar Cell Applications2011
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
- Organizer
  the 24th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  ANAホテル（京都市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Tunnel Field-Effect Transistors using InAs Nanowire/Si Heterojunction2011
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター（名古屋市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V compound semiconductor nanowires and their electrical and optical applications2011
- Author(s)
  T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
- Organizer
  The 7th International Conference on Advanced Materials and Devices
- Place of Presentation
  Ramada Plaza JeJu Hotel(Korea)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of InGaAs nanowire vertical surrounding-gate transistor on Si2011
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター（名古屋市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication and Characterization of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011
- Author(s)
  K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
- Organizer
  The 38th International Symposium on Compound Semiconductors
- Place of Presentation
  Maritim pro Arte Hotel, Berlin(Germany)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications2011
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui
- Organizer
  MRS spring meeting
- Place of Presentation
  San Fransisco's Moscone West Convention Hall(USA)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of InGaAs Nanowires-based vertical surrounding-gate FETs on Si2011
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui
- Organizer
  The 15th International Symposium on the Physics of Semiconductors and Applications
- Place of Presentation
  Ramada Plaza JeJu Hotel(Korea)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Mechanism on structural transition of InP nanowires by selective-area MOVPE2011
- Author(s)
  K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
- Organizer
  2011 Materials Research Society Fall Meeting
- Place of Presentation
  Haynes Convention Center, Boston(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Characterization of InP nanowire array solar cells using selective-area metal-organic vapor phase epitaxy2011
- Author(s)
  M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
- Organizer
  MRS Fall Meeting
- Place of Presentation
  Haynes Convention Center, Boston(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Tunnel field-effect transistor using InAs nanowire/Si heterojunction2011
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  The 15th International Symposium on the Physics of Semiconductors and Applications
- Place of Presentation
  Ramada Plaza JeJu Hotel(Korea)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011
- Author(s)
  K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター（名古屋市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Semiconductor nanowires and their photovoltaic applications2011
- Author(s)
  T. Fukui, M. Yoshimura, and K. Tomioka
- Organizer
  JSPS-RSAS Joint Conference on Capturing the Sun
- Place of Presentation
  Royal Swedish Academy of Science, Stockholm(Sweden)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication of Vertical In0.7Ga0.3As Nanowire Surrouding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011
- Author(s)
  K. Tomioka, M. Yoshimura, T. Fukui
- Organizer
  24th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  ANAホテル（京都市）
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of InGaAs/InP/InAlAs Core-Multishell Nanowire-Based Surrounding-Gate Transistors on Si Substrate2011
- Author(s)
  Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
- Organizer
  MRS 2011 Fall meeting
- Place of Presentation
  Haynes Convention Center, Boston(USA)
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Compound-Semiconductor Nanowire Solar Cells2011
- Author(s)
  T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  長良川国際会議場（岐阜市）
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Fabrication of III-V Nanowire-based Surrounding-Gate Transistors on Si Substrate2011
- Author(s)
  Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
- Organizer
  the 220th Electrochemical Society Meeting
- Place of Presentation
  Haynes Convention Center, Boston(USA)
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-area growth of wurtzite InP/AlGaP core-shell nanowires
- Author(s)
  J. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
- Organizer
  17th International Conference on Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  EPFL, Lausanne, Switzerland
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-Area Growth of III-V Nanowires and Their Devices
- Author(s)
  Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Muyi Chen, Takashi Fukui
- Organizer
  MRS fall meeting 2014
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Year and Date
  2014-11-30 – 2014-12-05
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] InGaAs axial junction nanowire array solar cells with Sn-doped contact layer
- Author(s)
  E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
- Organizer
  17th International Conference on Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  EPFL, Lausanne, Switzerland
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  225th ECS meeting
- Place of Presentation
  Hilton Bonnet Creek、Orland, USA
- Year and Date
  2014-05-12 – 2014-05-13
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Vertically aligned semiconductor nanowires and their applications
- Author(s)
  T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
- Organizer
  42nd Conference on the Physics and Chemistry of Surfaces and Interfaces
- Place of Presentation
  Snowbird Resort, Utah, USA
- Year and Date
  2015-01-18 – 2015-01-22
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V nanowires on patterned Si substrates and their applications
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  10th International Workshop on Epitaxial Semiconductor on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2014)
- Place of Presentation
  Trunseo International Academy, Traunkirchen，Austria
- Year and Date
  2015-07-20 – 2015-07-23
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE
- Author(s)
  Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba Conference Center, Tsukuba
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V semiconductor hetero-structure nanowires and their photonic applications
- Author(s)
  K. Tomioka, E. Nakai, F. Ishizaka and T. Fukui
- Organizer
  WE Heraeus Seminar on III-V Nanowire Photonics
- Place of Presentation
  Physikzentrum Bad Honnef, Bad Honnef , Germany
- Year and Date
  2015-03-22 – 2015-03-25
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-area growth of InAs nanowire inside Si(100) and SOI substrates toward tunnel FET applications
- Author(s)
  K. Tomioka, F. Ishizaka, and T. Fukui
- Organizer
  the 17th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  EPFL, Lausanne, Switzerland
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V nanowire channel and III-V/Si heterojunction for low-power switches
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  IEEE EUROSOI-ULIS 2015
- Place of Presentation
  Aula Prodi Piazza San Gionvanni in Monte, Bologna, Italy
- Year and Date
  2014-07-26 – 2014-07-28
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-area growth of III-V nanowires on Si and their applications
- Author(s)
  Katsuhiro Tomioka and Takashi Fukui
- Organizer
  8th Nanowire Growth Workshop/Nanowire 2014
- Place of Presentation
  Strijp-S Eindhoven, Eindhoven, Germany
- Year and Date
  2015-08-25 – 2015-08-29
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Semiconductor nanowires and their photovoltaic applications
- Author(s)
  T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
- Organizer
  3rd biennial Conference of the Combined Australian Materials Societies
- Place of Presentation
  University of Australia, Sydoney, Australia
- Year and Date
  2014-11-26 – 2014-11-28
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Selective-area growth of vertical InAs nanowires on Ge(111)
- Author(s)
  Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
- Organizer
  17thInternational Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII)
- Place of Presentation
  EPFL, Lausanne, Switzerland
- Year and Date
  2014-07-13 – 2014-07-18
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] III-V Compound Semiconductor Nanowire Solar Cells
- Author(s)
  Takashi Fukui1, Eiji Nakai1, MuYi Chen1 and Katsuhiro Tomioka
- Organizer
  Topical Meetings on Optical Nanostructures and Advanced Materials for Photovoltaics (PV)
- Place of Presentation
  Australian National University, Canberra, Australia
- Year and Date
  2014-12-02 – 2014-12-04
- Invited
- Data Source
  KAKENHI-PROJECT-23221007
[Presentation] Wurtzite InP/AlGaP Core-Shell Nanowires toward Direct Band Gap Transition
- Author(s)
  F. Ishizaka, K. Tomioka, and T. Fukui
- Organizer
  MRS Spring Meeting 2014
- Place of Presentation
  Moscone West, San Francisco, California, USA
- Year and Date
  2014-04-21 – 2014-04-25
- Data Source
  KAKENHI-PROJECT-23221007

1. Junichi Motohisa (60212263)

# of Collaborated Projects: 6 results

# of Collaborated Products: 79 results
2. 池辺将之 (20374613)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. Fukui Takashi (30240641)

# of Collaborated Projects: 1 results

# of Collaborated Products: 106 results
4. 原真二郎 (50374616)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 深田直樹 (90302207)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. J. Wipakorn (40748216)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 宮崎剛 (50354147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 松村亮 (90806358)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. OTSUKA Paul

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Tomioka Katsuhiro 冨岡 克広

TOMIOKA KATSUHIRO 冨岡 克広

Research Projects

Research Products

Co-Researchers

Development of nanowire hybrid integrated devicesPrincipal Investigator

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Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires

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Generation of Vector Beams using Semiconductor Nanowires

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Demonstration of ultrafast resonant tunneling transistorPrincipal Investigator

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Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applicationsPrincipal Investigator

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Study on Light-Emittind Devices on Si Substrates based on Semiconductor Nanowires

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A Novel Photodetector Utilizing Semiconductor Nanowires

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Research on tunnel FET using IV/III-V heterojunction toward circuit applicationPrincipal Investigator

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Compound Semiconductor Nanowires and their Optical Device Applications

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[Book] Chapter 2 in Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing2018

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Data Source

[Book] Novel Compound Semiconductor Nanowires; Materials, Devices, and Applications2017

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[Book] Handbook of Crystal Growth, Vol I Chapter 18 "Growth of Semiconductor Nanocrystals"2015

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[Book] Semiconductor Nanowire and Their Optical Applications, edited by G-C. Yi2012

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[Journal Article] Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium2022

Author(s)

Tomioka Katsuhiro 冨岡克広

TOMIOKA KATSUHIRO 冨岡克広

[Book] Handbook of Crystal Growth, Vol　I Chapter 18 "Growth of Semiconductor Nanocrystals"2015