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Tomioka Katsuhiro  冨岡 克広

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TOMIOKA KATSUHIRO  冨岡 克広

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Researcher Number 60519411
Other IDs
Affiliation (Current) 2022: 北海道大学, 情報科学研究院, 准教授
Affiliation (based on the past Project Information) *help 2022: 北海道大学, 情報科学研究科, 准教授
2019 – 2021: 北海道大学, 情報科学研究院, 准教授
2016 – 2018: 北海道大学, 情報科学研究科, 准教授
2017: 北海道大学, 大学院情報科学研究科, 准教授
2015: 北海道大学, 情報科学研究科, 助教
2015: 北海道大学, 大学院情報科学研究科, 助教
Review Section/Research Field
Principal Investigator
Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related
Except Principal Investigator
Electronic materials/Electric materials / Microdevices/Nanodevices / Medium-sized Section 28:Nano/micro science and related fields / Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
ナノワイヤ / 薄膜・量子構造 / トンネルFET / ナノワイヤ材料 / 半導体デバイス / 電気・電子材料 / 結晶成長 / 省エネルギー / ナノ材料 / 半導体ナノ構造 … More / 薄膜成長 / ダイオード / トランジスタ / 半導体物性 / 電子・電気材料 / 超格子 / 共鳴トンネル輸送 … More
Except Principal Investigator
半導体ナノワイヤ / ナノワイヤ / 発光ダイオード / 有機金属気相成長 / 選択成長 / 化合物半導体 / 結晶成長 / 太陽電池 / LED / 光検出器 / フォトダイオード / シリコンフォトニクス / 有機金属気相選択成長 / 流量変調エピタキシー法 / アバランシェフォトダイオード / 量子ドット / 単一光子光源 / シリコン / ゲルマニウム / トランジスタ / 偏光渦 / ベクトル光波 / ナノワイヤレーザ Less
  • Research Projects

    (9 results)
  • Research Products

    (325 results)
  • Co-Researchers

    (14 People)
  •  ナノワイヤハイブリッド集積デバイスの創成Principal Investigator

    • Principal Investigator
      冨岡 克広
    • Project Period (FY)
      2022 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Hokkaido University
  •  Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires

    • Principal Investigator
      深田 直樹
    • Project Period (FY)
      2021 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 28:Nano/micro science and related fields
    • Research Institution
      National Institute for Materials Science
  •  Generation of Vector Beams using Semiconductor Nanowires

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Hokkaido University
  •  Demonstration of ultrafast resonant tunneling transistorPrincipal Investigator

    • Principal Investigator
      冨岡 克広
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Hokkaido University
  •  Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applicationsPrincipal Investigator

    • Principal Investigator
      冨岡 克広
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Hokkaido University
  •  Study on Light-Emittind Devices on Si Substrates based on Semiconductor Nanowires

    • Principal Investigator
      Motohisa Junichi
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  A Novel Photodetector Utilizing Semiconductor Nanowires

    • Principal Investigator
      Junichi Motohisa
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Research on tunnel FET using IV/III-V heterojunction toward circuit applicationPrincipal Investigator

    • Principal Investigator
      Tomioka Katsuhiro
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Compound Semiconductor Nanowires and their Optical Device Applications

    • Principal Investigator
      Fukui Takashi
    • Project Period (FY)
      2011 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Microdevices/Nanodevices
    • Research Institution
      Hokkaido University

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation Book Patent

  • [Book] Chapter 2 in Emerging Devices for Low-Power and High-Performance Nanosystems: Physics, Novel Functions, and Data Processing2018

    • Author(s)
      Katsuhiro Tomioka
    • Publisher
      Pan Stanford Publishing
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Book] Novel Compound Semiconductor Nanowires; Materials, Devices, and Applications2017

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa Takashi Fukui
    • Publisher
      Pan Stanford Publishing
    • ISBN
      9814745766
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Book] Handbook of Crystal Growth, Vol I Chapter 18 "Growth of Semiconductor Nanocrystals"2015

    • Author(s)
      Tomioka K, Fukui T.
    • Total Pages
      46
    • Publisher
      Elsevier
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Book] Semiconductor Nanowire and Their Optical Applications, edited by G-C. Yi2012

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Total Pages
      36
    • Publisher
      Wiley
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 120 (SDM2020-52) Pages: 13-16

    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Journal Article] (招待講演) InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 120 Pages: 13-16

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Journal Article] Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si2020

    • Author(s)
      Gamo Hironori、Tomioka Katsuhiro
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Pages: 1169-1172

    • DOI

      10.1109/led.2020.3004157

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
  • [Journal Article] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Tomioka Katsuhiro、Gamo Hironori、Motohisa Junichi、Fukui Takashi
    • Journal Title

      2020 IEEE International Electron Devices Meeting (IEDM)

      Volume: IEDM-2020 Pages: 429-432

    • DOI

      10.1109/iedm13553.2020.9371991

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
  • [Journal Article] Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs2020

    • Author(s)
      Akamatsu Tomoya、Tomioka Katsuhiro、Motohisa Junichi
    • Journal Title

      Nanotechnology

      Volume: 31 Pages: 394003-394003

    • DOI

      10.1088/1361-6528/ab9bd2

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20H02176
  • [Journal Article] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Tai Yoshiki、Gamo Hironori、Motohisa Junichi、Tomioka Katsuhiro
    • Journal Title

      ECS Transactions

      Volume: 98 Pages: 149-153

    • DOI

      10.1149/09806.0149ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184, KAKENHI-PROJECT-20J20578
  • [Journal Article] Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes2020

    • Author(s)
      Tomioka Katsuhiro、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Scientific Reports

      Volume: 10

    • DOI

      10.1038/s41598-020-67625-y

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistor2020

    • Author(s)
      Tomioka Katsuhiro、Ishizaka Fumiya、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Applied Physics Letters

      Volume: 117 Pages: 123501-123501

    • DOI

      10.1063/5.0014565

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] Vertical InGaAs Nanowire Array Photodiodes on Si2019

    • Author(s)
      Chiba Kohei、Yoshida Akinobu、Tomioka Katsuhiro、Motohisa Junichi
    • Journal Title

      ACS Photonics

      Volume: 6 Pages: 260-264

    • DOI

      10.1021/acsphotonics.8b01089

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
  • [Journal Article] InP/InAsP/InPヘテロ構造ナノワイヤLEDの作製と評価2019

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 118 Pages: 247-250

    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] Vertical Tunnel FET Technologies using III-V/Si heterojunciton2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Journal Title

      ECS Transaction

      Volume: 92 Pages: 71-78

    • DOI

      10.1149/ma2019-02/25/1168

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] Heterogeneous integration of vertical III-V nanowires on Si and their transistor applications2019

    • Author(s)
      冨岡克広
    • Journal Title

      OYOBUTURI

      Volume: 88 Issue: 4 Pages: 245-251

    • DOI

      10.11470/oubutsu.88.4_245

    • NAID

      130007709428

    • ISSN
      0369-8009, 2188-2290
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K21951, KAKENHI-PROJECT-19H02184
  • [Journal Article] Growth and characterization of GaAs nanowires on Ge(1?1?1) substrates by selective-area MOVPE2019

    • Author(s)
      Minami Yusuke、Yoshida Akinobu、Motohisa Junichi、Tomioka Katsuhiro
    • Journal Title

      Journal of Crystal Growth

      Volume: 506 Pages: 135-139

    • DOI

      10.1016/j.jcrysgro.2018.10.009

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy2019

    • Author(s)
      Motohisa Junichi、Kameda Hiroki、Sasaki Masahiro、Tomioka Katsuhiro
    • Journal Title

      Nanotechnology

      Volume: 30 Pages: 134002-134002

    • DOI

      10.1088/1361-6528/aafce5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080
  • [Journal Article] Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application2018

    • Author(s)
      Gamo Hironori、Tomioka Katsuhiro
    • Journal Title

      Journal of Crystal Growth

      Volume: 500 Pages: 58-62

    • DOI

      10.1016/j.jcrysgro.2018.07.035

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform2017

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa
    • Journal Title

      AIP Advances

      Volume: 7 Pages: 125304-125304

    • DOI

      10.1063/1.4993689

    • NAID

      120006380383

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17H03223, KAKENHI-PROJECT-16H06080, KAKENHI-PROJECT-16K14221
  • [Journal Article] Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy2017

    • Author(s)
      A. Yoshida, K. Tomioka, F. Ishizaka, and J. Motohisa
    • Journal Title

      J. Cryst. Growth

      Volume: 464 Pages: 7579-7579

    • DOI

      10.1016/j.jcrysgro.2016.10.083

    • NAID

      120006606585

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
  • [Journal Article] (Invited) Transistor application using vertical III-V nanowires on Si platform2017

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Journal Title

      ECS Transaction

      Volume: 80 Pages: 43-52

    • DOI

      10.1149/08001.0043ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures2017

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 1 Pages: 010311-010311

    • DOI

      10.7567/jjap.56.010311

    • NAID

      120006374971

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
  • [Journal Article] Growth of All-Wurtzite InP/AlInP Core-Multishell Nanowires2017

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, and T. Fukui
    • Journal Title

      Nano Lett.

      Volume: 17 Pages: 1350-1355

    • DOI

      10.1021/acs.nanolett.6b03727

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
  • [Journal Article] Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer2016

    • Author(s)
      Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 3 Pages: 035502-035502

    • DOI

      10.7567/apex.9.035502

    • NAID

      210000137834

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
  • [Journal Article] (Invited) Recent progress in vertical Si/III-V tunnel FETs: From fundamental to current-boosting technology2016

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
    • Journal Title

      ECS Transactions

      Volume: 75 Pages: 127-134

    • DOI

      10.1149/07505.0127ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] (Invited) Advances in steep-slope tunnel FETs2016

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Proceedings of IEEE ESSDERC

      Volume: 2016 Pages: 392-402

    • DOI

      10.1109/essderc.2016.7599670

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Journal Article] Selective-area growth of vertical InGaAs nanowires on Ge for transistor applications2016

    • Author(s)
      A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, and J. Motohisa
    • Journal Title

      ECS Transactions

      Volume: 75 Pages: 265-270

    • DOI

      10.1149/07505.0265ecst

    • NAID

      120005971325

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-16H06080
  • [Journal Article] Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application2015

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 15 Pages: 7253-7257

    • DOI

      10.1021/acs.nanolett.5b02165

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
  • [Journal Article] Surrounding-Gate Tunnel FET Using InAs/Si Heterojunction2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Journal Title

      ECS Transaction

      Volume: 69 Pages: 109-118

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] InGaAs axial-junction nanowire-array solar cells2015

    • Author(s)
      E. Nakai, M. Chen, M. Yoshimura, K. Tomioka, and T,Fukui
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 1 Pages: 015201-015201

    • DOI

      10.7567/jjap.54.015201

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
  • [Journal Article] Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE2015

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
    • Journal Title

      Journal of Crystal Growth

      Volume: 411 Pages: 71-75

    • DOI

      10.1016/j.jcrysgro.2014.10.024

    • NAID

      120005540288

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-23221007
  • [Journal Article] Application of free-standing InP nanowire arrays and their optical properties for resource saving solar cells2015

    • Author(s)
      M. Chen, E. Nakai, K. Tomioka, and T.Fukui
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 1 Pages: 012301-012301

    • DOI

      10.7567/apex.8.012301

    • NAID

      210000137348

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
  • [Journal Article] Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth2014

    • Author(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Journal Title

      Journal of Physs D: Applied Physics

      Volume: 47

    • DOI

      10.1088/0022-3727/47/39/394001

    • NAID

      120005512025

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] III-V族化合物半導体ナノワイヤ太陽電池2014

    • Author(s)
      福井孝志、吉村正利、中井栄治、冨岡克広
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 29-34

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2014

    • Author(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Journal Title

      ECS Transaction

      Volume: 61 Pages: 81-89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2014

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Journal Title

      Applied Physics Letters

      Volume: 104

    • DOI

      10.1063/1.4865921

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] GaAs/InGaP Core–Multishell Nanowire-Array-Based Solar Cells2013

    • Author(s)
      E. Nakai, M. Yoshimura, et al.
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 5R Pages: 055002-055002

    • DOI

      10.7567/jjap.52.055002

    • NAID

      210000142167

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] Indium Phosphide Core–Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer2013

    • Author(s)
      M. Yoshimura, et al.
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 5 Pages: 052301-052301

    • DOI

      10.7567/apex.6.052301

    • NAID

      10031174313

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] Indium Tin Oxide and Indium Phosphide heterojunction nanowire array solar cells2013

    • Author(s)
      M. Yoshimura, et al.
    • Journal Title

      Applied Physics Letters

      Volume: 103

    • DOI

      10.1063/1.4847355

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 13 Pages: 5822-5826

    • DOI

      10.1021/nl402447h

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE2013

    • Author(s)
      Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      Nanotechnology

      Volume: 24

    • DOI

      10.1088/0957-4484/24/11/115304

    • NAID

      120005425342

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] 半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用2013

    • Author(s)
      冨岡 克広、福井 孝志
    • Journal Title

      電子情報通信学会論文誌C

      Volume: J96-C Pages: 221-230

    • NAID

      110009657215

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Indium-rich InGaP Nanowires Formed on InP(111)A Substrates by Selective-area Metal Organic Vapor Phase Epitaxy2013

    • Author(s)
      Fumiya Ishizaka, Keitaro Ikejiri, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 4S Pages: 04CH05-04CH05

    • DOI

      10.7567/jjap.52.04ch05

    • NAID

      210000142077

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] Bi-directional Growth of Indium Phosphide Nanowires2012

    • Author(s)
      Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      NANO LETTERS

      Volume: 12 Pages: 4770-4774

    • DOI

      10.1021/nl302202r

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] A III-V nanowire channel on Si for high-performance vertical transistors2012

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Journal Title

      Nature

      Volume: 488 Pages: 189-192

    • DOI

      10.1038/nature11293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy2012

    • Author(s)
      T. Fukui, M. Yoshimura, et al.
    • Journal Title

      AMBIO: A Journal of the Human Environment

      Volume: 41 (Supplement 2) Pages: 119-124

    • DOI

      10.1007/s13280-012-0266-5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] 半導体ナノワイヤデバイス応用の新展開2012

    • Author(s)
      冨岡 克広、福井 孝志
    • Journal Title

      応用物理

      Volume: 81 Pages: 59-64

    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] 'Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses2012

    • Author(s)
      Hirotaka Sakuma, Motonobu Tomoda, Paul H.Otsuka, Osamu Matsuda, Oliver B.Wright, Takashi Fukui, Katsuhiro Tomioka, Istvan A.Veres
    • Journal Title

      Applied Physics Letters

      Volume: 100

    • DOI

      10.1063/1.3696380

    • NAID

      120004027249

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10F00795, KAKENHI-PROJECT-22246012, KAKENHI-PROJECT-23221007
  • [Journal Article] Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy2012

    • Author(s)
      笹倉弘理
    • Journal Title

      Phys. Rev. B

      Volume: 85

    • DOI

      10.1103/physrevb.85.075324

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560001, KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-24560001
  • [Journal Article] III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (Invited Paper)2011

    • Author(s)
      K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 17 Pages: 1112-1129

    • DOI

      10.1109/jstqe.2010.2068280

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
  • [Journal Article] Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires2011

    • Author(s)
      K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
    • Journal Title

      Nano Lett.

      Volume: 11 Pages: 4314-4318

    • DOI

      10.1021/nl202365q

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Selective-Area Growth of III-V Nanowires and Their Applications (Review Paper)2011

    • Author(s)
      K. Tomioka, K. Ikejiri, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui
    • Journal Title

      Journal of Materials Research

      Volume: 26 Pages: 2127-2141

    • DOI

      10.1557/jmr.2011.103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
  • [Patent] Tunnel field effect transistor2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Patent] Group III-V compound semiconductor nanowire, field effect transistor, and switching element2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Patent] Group III-V compound semiconductor nanowire, field effect transistor, and switching element2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Patent] トンネル電界効果トランジスタ2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Patent] トンネル電界効果トランジスタ2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Patent] Tunnel field effect transistor2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Patent] TUNNEL FIELD EFFECT TRANSISTOR2018

    • Inventor(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Industrial Property Rights Holder
      Katsuhiro Tomioka, Takashi Fukui
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Patent] トンネル電界効果トランジスタ2017

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-543415
    • Filing Date
      2017
    • Overseas
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Patent] TUNNEL FIELD EFFECT TRANSISTOR2016

    • Inventor(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Industrial Property Rights Holder
      Katsuhiro Tomioka, Takashi Fukui
    • Industrial Property Rights Type
      特許
    • Filing Date
      2016
    • Acquisition Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Patent] トンネル電界効果トランジスタ2015

    • Inventor(s)
      冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-193196
    • Filing Date
      2015-09-30
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-10-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-10-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-08-13
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-08-12
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル電界効果トランジスタ、その製造方法およびスイッチ素子2013

    • Inventor(s)
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-168048
    • Filing Date
      2013-08-13
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物ナノワイヤ、電界効果トランジスタおよびスイッチ素子2013

    • Inventor(s)
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-226675
    • Filing Date
      2013-10-13
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] 発光素子およびその製造方法2013

    • Inventor(s)
      1. 福井孝志、石坂文哉、冨岡克広
    • Industrial Property Rights Holder
      1. 福井孝志、石坂文哉、冨岡克広
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-138894
    • Filing Date
      2013-07-02
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InPナノワイヤの接合構造と発光ダイオード特性の関係2021

    • Author(s)
      木村 峻、勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021

    • Author(s)
      小原 康,冨岡 克広,原 真二郎,本久 順一
    • Organizer
      第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021

    • Author(s)
      小原 康,冨岡 克弘,原 真二郎,本久 順一
    • Organizer
      第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] (招待講演) InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Organizer
      2020年度電子情報通信学会 シリコン材料・デバイス研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Si上のInAs/GaSbコアシェルナノワイヤ縦型サラウンディングゲートトランジスタの試作2021

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ縦型トンネルFETの作製2020

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui
    • Organizer
      66th International Electron Devices Meeting (IEDM 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長2020

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長2020

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Y. Tai, J. Motohisa, K. Tomioka
    • Organizer
      Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Selective-area growth of InGaAs/GaSb core-shell nanowires on Si2020

    • Author(s)
      Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Y. Tai, J. Motohisa, K. Tomioka
    • Organizer
      Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Organizer
      The 20th International Meeting on Information Display (IMID 2020)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020

    • Author(s)
      田井 良樹、赤松 知弥、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長と電気特性2020

    • Author(s)
      蒲生 浩憲、陳 栎安、勝見 悠、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02176
  • [Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020

    • Author(s)
      田井 良樹、赤松 知弥、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Organizer
      The 20th International Meeting on Information Display (IMID 2020)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] III-V族化合物半導体ナノワイヤチャネルの電子素子応用2019

    • Author(s)
      冨岡克広
    • Organizer
      第24回半導体におけるスピン工学の基礎と応用(PASPS-24)
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Hiroki Kameda, Katsuhiro Tomioka, and Junichi Motohisa
    • Organizer
      Nanowire Weak 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019

    • Author(s)
      K. Tomioka, J. Motohisa
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019

    • Author(s)
      H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP/InAsP/InPヘテロ構造ナノワイヤLEDの作製と評価2019

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      2018年度電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs2019

    • Author(s)
      K. Tomioka, A. Yoshida, H. Gamo
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Demonstration of InAs nanowire vertical transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] アニールによるInPナノワイヤ直径微細化2019

    • Author(s)
      佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第54回応用物理学会北海道支部/第15回日本光学会北海道支部 合同学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019

    • Author(s)
      Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ縦型サラウンディングゲートトランジスタの作製2019

    • Author(s)
      勝見悠、蒲生浩憲、佐々木正尋、本久順一、冨岡克広
    • Organizer
      第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019

    • Author(s)
      Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Si上のInAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタ高性能化の検討2019

    • Author(s)
      蒲生浩憲、本久順一、冨岡克広
    • Organizer
      第54回応用物理学会北海道支部/第15回日本光学会北海道支部 合同学術講演会、函館、1/5 - 6 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Organizer
      236th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Si上のIII-Vナノワイヤ選択成長とトランジスタ作製2019

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      応用物理学会界面ナノ電子化学研究会 第4回ポスター発表展、東京、3/11 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] III-V族化合物半導体ナノワイヤチャネルの電子素子応用2019

    • Author(s)
      冨岡克広
    • Organizer
      第24回半導体におけるスピン工学の基礎と応用(PASPS-24)
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Organizer
      236th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs2019

    • Author(s)
      K. Tomioka, A. Yoshida, H. Gamo
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019

    • Author(s)
      蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Si上InGaAs/GaSbコアシェルナノワイヤ選択成長2019

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Si上InGaAs/GaSbコアシェルナノワイヤ選択成長2019

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019

    • Author(s)
      Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K.Tomioka
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019

    • Author(s)
      H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K.Tomioka
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019

    • Author(s)
      蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] Ge(111)上GaAs/AlGaAs/GaAsコアシェルナノワイヤの電気特性2019

    • Author(s)
      南 祐輔、本久 順一、冨岡 克広
    • Organizer
      第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InAs/InPコアシェルナノワイヤ/Si接合界面による縦型トンネルFETの作製2019

    • Author(s)
      蒲生浩憲、本久順一、冨岡克広
    • Organizer
      第66回応用物理学会春季学術講演会、東京、3/9-12 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2019 International Workshop on Physics of Semiconductor Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019

    • Author(s)
      Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Nanowire Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019

    • Author(s)
      K. Tomioka, J. Motohisa
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02184
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥, 佐々木 正尋, 冨岡 克広, 本久 順一
    • Organizer
      第80回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Demonstration of InAs nanowire vertical transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K21951
  • [Presentation] アニールによるInPナノワイヤ直径微細化2019

    • Author(s)
      佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第54回応用物理学会北海道支部/第15回日本光学会北海道支部 合同学術講演会、函館、1/5 - 6 (2019)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InGaAs nanowire/Ge heterojunction Esaki tunnel diodes2018

    • Author(s)
      A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 -13 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE2018

    • Author(s)
      Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018

    • Author(s)
      佐々木 正尋、千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会、名古屋、9/18- 21 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InPナノワイヤLEDの温度依存性評価2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      第79回応用物理学会秋季学術講演会、名古屋、9/18 - 21 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会、名古屋、9/18- 21 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018

    • Author(s)
      M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Vertical GaAs-InGaP core-shell nanowires on Si by selective-area growth2018

    • Author(s)
      K. Tomioka, A. Yoshida, F. Ishizaka, J. Motohisa
    • Organizer
      Nanowire Week 2018, Hamilton, Canada, June 11 -15 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si上InAsナノワイヤ縦型FET高性能化の検討2018

    • Author(s)
      蒲生 浩憲、冨岡 克広、吉田 旭伸、千葉 康平、本久 順一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si上のInAsナノワイヤ縦型サラウンディングゲートトランジスタの高性能化2018

    • Author(s)
      蒲生 浩憲、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会、名古屋、9/18 - 21 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Characterization of GaAs-InGaP core-multishell nanowires on Si by selective-area MOVPE2018

    • Author(s)
      K. Tomioka, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性評価2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Integration of III-V nanowires on Si and their transistor applications (Plenary)2018

    • Author(s)
      Katsuhiro Tomioka
    • Organizer
      22nd International Conference on Advanced Materials, Rome, Italy, Dec. 10-12 (2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Electroluminescence from InP-based Heterostructure Nanowires2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Ge上InGaAsナノワイヤの組成評価と縦型素子応用2018

    • Author(s)
      吉田 旭伸、冨岡 克広、千葉 康平、本久 順一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InPナノワイヤLEDにおける発光効率の温度依存性2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] 熱アニールによるInPナノワイヤのサイズ制御の検討2018

    • Author(s)
      佐々木 正尋、千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Vertical FETs using pulse-doped InAs nanowires on Si2018

    • Author(s)
      H. Gamo, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      Nanowire Week 2018, Hamilton, Canada, June 11 - 15 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Scaling Effect on Vertical FETs using III-V Nanowire-Channels2018

    • Author(s)
      K. Tomioka, H. Gamou, A. Yoshida, J. Motohisa
    • Organizer
      Compound Semiconductor Week 2018 (CSW 2018), Boston, USA, May 29 - June 1 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Study on emission mechanism in InP-based nanowire LEDs2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Nanowire Week 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InP/InAsPナノワイヤLEDの電流注入発光特性2018

    • Author(s)
      赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Electroluminescence from InP-based Heterostructure Nanowiress2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 - 13 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] 有機金属気相選択成長により作製したInPナノワイヤのサイズ制御2018

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第10回 ナノ構造・エピタキシャル成長講演会、名古屋、7/12- 13 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Shallow and heavy doping of Ge by MOVPE2018

    • Author(s)
      K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Heterogeneous integration of InGaAs nanowires with various In compositions on Ge(111) substrates for vertical transistor application2018

    • Author(s)
      A. Yoshida, K. Tomioka, K. Chiba, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area growth of pulse-doped InAs related nanowire-channels on Si2018

    • Author(s)
      H. Gamou, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3-8 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si上の垂直GaAs-InGaPコアマルチシェルナノワイヤの異種集積2018

    • Author(s)
      冨岡 克広、本久 順一
    • Organizer
      The 37th Electronic Materials Symposium (EMS 37), 長浜, 11/10-12 (2018)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Study on Emission Mechanisms in InP-based Nanowire LEDs2018

    • Author(s)
      Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
    • Organizer
      Nanowire Week 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Study on emission mechanism in InP-based nanowire LEDs2018

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Nanowire Week 2018, Hamilton, Canada, June 11 -15 (2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Size Control of InP NWs by in situ Thermal Annealing in MOVPE2018

    • Author(s)
      M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] InPナノワイヤLEDの温度依存性評価2018

    • Author(s)
      本久 順一、亀田 滉貴、佐々木 正尋、冨岡 克広
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE2018

    • Author(s)
      Junichi Motohisa, Hiroki Kameda, Masahiro Sasaki, and Katsuhiro Tomioka
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] InAsP 埋め込み InP ナノワイヤにおける発光波長制御2017

    • Author(s)
      佐々木 正尋、千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] 太陽光発電応用に向けたGe(111)基板上GaAsナノワイヤのMOVPE選択成長2017

    • Author(s)
      南 祐輔、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Current enhancement of tunnel FET using modulation-doped nanowire-channels2017

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa
    • Organizer
      22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Heterogeneous integration of vertical InGaAs nanowires on Ge (111) substrates by selective-area growth2017

    • Author(s)
      A. Yoshida, Y. Minami, K. Tomioka, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Vertical III-V nanowires on Si and transistor applications2017

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017

    • Author(s)
      H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
    • Organizer
      22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Improved characteristics of InP-based nanowire light-emitting diodes2017

    • Author(s)
      H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa
    • Organizer
      22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Nanowire quantum dots emitting at telecom wavelength2017

    • Author(s)
      M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      The 24th Congress of the International Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017

    • Author(s)
      [8].千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Nanowire quantum dots emitting at telecom wavelength2017

    • Author(s)
      M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      The 24th Congress of the International Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017

    • Author(s)
      千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] 通信波長帯で発光するナノワイヤ量子ドットの成長と評価2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Ge(111)基板上InGaAsナノワイヤ選択成長2017

    • Author(s)
      吉田 旭伸、南 祐輔、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] MOVPE選択成長法によるGe(111)基板上のGaAsナノワイヤ成長2017

    • Author(s)
      南 祐輔、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川、日本)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017

    • Author(s)
      千葉 康平、吉田 旭伸、冨岡 克広、本久 順一:
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] InAsP量子ドットナノワイヤにおける通信波長帯発光2017

    • Author(s)
      佐々木 正尋、千葉 康平、冨岡 克広、本久 順一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03223
  • [Presentation] Vertical InGaAs nanowire photodiode array on Si2017

    • Author(s)
      K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      MRS fall meeting 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017

    • Author(s)
      K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      30th International Microprocesses and Nanotechnology Conference (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Ge(111) 基板上の GaAs ナノワイヤ選択成長2017

    • Author(s)
      南 祐輔、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Vertical InGaAs nanowire photodiode array on Si2017

    • Author(s)
      K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      MRS fall meeting 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Transistor applications using vertical III-V nanowires on Si platform2017

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      232rd ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Composition control of InGaAs nanowires on Ge(111) substrates by selective-area growth2017

    • Author(s)
      A. Yoshida, K. Chiba, Y. Minami, K. Tomioka, J. Motohisa
    • Organizer
      30th International Microprocesses and Nanotechnology Conference (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Ge上InGaAsナノワイヤ選択成長と組成制御2017

    • Author(s)
      吉田 旭伸、冨岡 克広、石坂 文哉、本久 順一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川、日本)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] 半導体ナノワイヤ選択成長と電子デバイス応用2017

    • Author(s)
      冨岡 克広、本久 順一
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017

    • Author(s)
      千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Radial modulation-doped nanowire channel for millivolt switch2017

    • Author(s)
      K. Tomioka, K. Chiba, A. Yoshida, J. Motohisa
    • Organizer
      MRS fall meeting 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Phase transition from Zinc Blende to Wurtzite and green-yellow emission of AlInP grown by crystal structure transfer method (Invited)2017

    • Author(s)
      Takashi Fukui, Yoshihiro Hiraya, Fumiya Ishizaka, and Katsuhiro Tomioka
    • Organizer
      13th Sweden - Japan QNANO Workshop
    • Place of Presentation
      PACIFICO Yokohama (Yokohama, Japan)
    • Year and Date
      2017-03-23
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] III-V族化合物半導体ナノワイヤ縦型トランジスタのチャネル長スケーリング効果2017

    • Author(s)
      冨岡 克広、吉田 旭伸、南 祐輔、石坂 文哉
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] MOVPE選択成長法によりナノワイヤ成長とデバイス応用2017

    • Author(s)
      冨岡 克広、本久 順一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area growth of GaAs nanowires on Ge(111) substrates2017

    • Author(s)
      Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017

    • Author(s)
      K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      30th International Microprocesses and Nanotechnology Conference (MNC 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area growth of vertical InGaAs nanowires on Ge(111) for transistor applications2016

    • Author(s)
      A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
    • Place of Presentation
      Hawaii Convention Center (Honolulu, USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si基板上InGaAsナノワイヤの組成制御2016

    • Author(s)
      千葉 康平、冨岡 克広、石坂 文哉、吉田 旭伸、本久 順一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟、日本)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Si基板上InGaAsナノワイヤの組成制御2016

    • Author(s)
      千葉 康平、冨岡 克広、石坂 文哉、吉田 旭伸、本久 順一
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Selective-area growth of InGaAs-based core-multishell nanowires on Si(111) with modulation-doped layer toward tunnel FETs2016

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya Congress Center (Aichi, Japan)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective area growth of III-V nanowires on Si and their transistor applications (Invited)2016

    • Author(s)
      K. Tomioka
    • Organizer
      2016 HU-SNU Joint Workshop
    • Place of Presentation
      Hokkaido University (Sapporo, Japan)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Recent progress in vertical Si/III-V tunnel FETs: from fundamentals to current boosting technology (Invited)2016

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
    • Place of Presentation
      Hawaii Convention Center (Honolulu, USA)
    • Year and Date
      2016-10-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa, and Takashi Fukui
    • Organizer
      The 35th Electronic Materials Symposium (EMS 35)
    • Place of Presentation
      Laforet Shiga (Moriyama, Japan)
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016

    • Author(s)
      K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME 2016)
    • Place of Presentation
      Hawaii Convention Center (Honolulu, USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Growth of Wurtzite AlInP in InP/AlInP Core-Shell Nanowires by Crystal Structure Transfer Method2016

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui
    • Organizer
      The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
    • Place of Presentation
      Sheraton San Diego Hotel & Marina (San Diego, USA)
    • Year and Date
      2016-07-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] High-performance InGaAs/Si tunnel FETs using core-multishell nanowire-channel2016

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      2016 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Hynes Convention Center (Boston, USA)
    • Year and Date
      2016-11-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area growth of III-V nanowires on Si and transistor applications (Invited)2016

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      The Eighth International Conference on Low Dimensional Structures and Devices (LDSD 2016)
    • Place of Presentation
      IBEROSTAR Paraiso Beach (Mayan Riviera, Mexico)
    • Year and Date
      2016-08-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] InGaAs/Si heterojunction tunnel FET with modulation-doped channel2016

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      2016 International Conference on Solid State Devices and Materials (SSDM 2016)
    • Place of Presentation
      Tsukuba International Congress Center (Tsukuba, Japan)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy2016

    • Author(s)
      A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, T. Fukui
    • Organizer
      The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
    • Place of Presentation
      Sheraton San Diego Hotel & Marina (San Diego, USA)
    • Year and Date
      2016-07-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] ウルツ鉱構造InP/AlInPコアマルチシェルナノワイヤの構造及び光学特性評価2016

    • Author(s)
      石坂 文哉、平谷佳大、冨岡 克広、本久 順一、福井 孝志
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟、日本)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016

    • Author(s)
      K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
    • Organizer
      PRiME 2016, 230th Meeting of The Electrochemical Society (ECS 230)
    • Place of Presentation
      Honolulu
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Heterogeneous Integration of InGaAs-Related Nanowires on Si and Their Device Applications (Invited)2016

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      The 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)
    • Place of Presentation
      Sheraton San Diego Hotel & Marina (San Diego, USA)
    • Year and Date
      2016-07-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016

    • Author(s)
      K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya Congress Center (Nagoya, Japan)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Heterogeneous integration of vertical InxGa1-xAs nanowires on Ge(111) substrates by selective-area MOVPE2016

    • Author(s)
      A. Yoshida, F. Ishizaka, K. Tomioka, J. Motohisa
    • Organizer
      29th International Microprocesses and Nanotechnology Conference (MNC 2016)
    • Place of Presentation
      ANA Crowne Plaza Kyoto (Kyoto, Japan)
    • Year and Date
      2016-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016

    • Author(s)
      K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] III-V semiconductor nanowire hetero-epitaxy on Si, Ge, poly-Si and graphene (Invited)2016

    • Author(s)
      T. Fukui and K. Tomioka
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya Congress Center (Aichi, Japan)
    • Year and Date
      2016-08-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa
    • Organizer
      The 35th Electronic Materials Symposium (EMS 35)
    • Place of Presentation
      Moriyama
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-16K14221
  • [Presentation] Advances in Steep-Slope Tunnel FETs (Invited)2016

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      ESSCIRC-ESSDERC 2016
    • Place of Presentation
      Swisstech Convention Centre (Lausanne, Switzerland)
    • Year and Date
      2016-09-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Structural and Optical Properties of Wurtzite InP/AlInP Core-Multishell Nanowires2016

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      2016 International Conference on Solid State Devices and Materials (SSDM 2016)
    • Place of Presentation
      Tsukuba International Congress Center (Tsukuba, Japan)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06080
  • [Presentation] Selective-Area Growth of Vertical InAs Nanowires on Ge(111)2015

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires2015

    • Author(s)
      F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
    • Organizer
      2015 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center, Sapporo Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Free-Standing InP Nanowire Array and Their Optical Properties toward Resource Saving Solar Cells2015

    • Author(s)
      MuYi Chen, Eiji Nakai, Katsuhiro Tomioka, Takashi Fukui
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Recent progress in vertical TFET using III-V/Si heterojunction2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      Steep Transistors Workshop
    • Place of Presentation
      University of Notre Dame, Notre Dame, USA
    • Year and Date
      2015-10-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      The 20th American Conference on Crystal Growth and Epitaxy and The 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy
    • Place of Presentation
      Big Sky resort Hotel, Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical III-V nanowire transistors for future low-power switches2015

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      12th Sweden - Japan QNANO Workshop,
    • Place of Presentation
      Hjortviken, Hindas, Sweden
    • Year and Date
      2015-09-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channel on Si: From high-performance Vertical FET to steep-slope device2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      2015 International Symposium on VLSI Technology, Systems and Applications (2015 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Year and Date
      2015-04-27
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Semiconductor nanowire array grown by selective area epitaxy and their applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      The International Chemical Congress of Pacific Basin Societies 2015
    • Place of Presentation
      Honolulu Convention Center, Hawaii, USA
    • Year and Date
      2015-12-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep Turn-On Property of Vertical Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015

    • Author(s)
      K. Tomioka, F. Ishizaka, T. Fukui, J. Motohisa
    • Organizer
      2015 MRS Fall Meeting
    • Place of Presentation
      Sheraton Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertically Aligned Semiconductor Nanowire Array and Their Applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      Compound Semiconductor Week 2015
    • Place of Presentation
      University of California Santa Barbara, Santa Barbara, USA
    • Year and Date
      2015-06-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Structural and Optical Properties of Wurtzite AlInP Grown on Wurtzite InP Nanowires2015

    • Author(s)
      F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
    • Organizer
      2015 MRS Fall Meeting
    • Place of Presentation
      Sheraton Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of AlGaP and AlInP on GaN Substrates Toward Transferring Wurtzite Structure2015

    • Author(s)
      Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      Compound Semiconductor Week 2015
    • Place of Presentation
      University of California Santa Barbara, USA
    • Year and Date
      2015-06-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor Nanowires Grown by Selective Area MOVPE and Their Device Applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Lakeshore Hotel, Hsinchu, Taiwan
    • Year and Date
      2015-09-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      228th ECS Meeting
    • Place of Presentation
      Phoenix Convention Center, Phoenix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      2015 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center, Sapporo Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Highly Conductive InAs Nanowire Vertical Transistors on Si2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      MRS spring meeting 2013
    • Place of Presentation
      Moscone West Convention Center, San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] ITO/p-InP Heterojunction NW-Array Solar Cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      TUM-IAS Focus Workshop
    • Place of Presentation
      Technische Universitat Munchen, Munich, Germany,
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      IUMRS ICAM
    • Place of Presentation
      Qingdao International Convention Center, Qingdao, China
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Nanowire/Si Heterojunction Tunnel Field-Effect Transistors2013

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of Wurtzite InP/GaP Core-shell Nanowires by Selective-area Metal Organic Vapor Phase Epitaxy2013

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet, Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      2013 Conference on Lasers and Electro-Optics (CREO:2013)
    • Place of Presentation
      San Jose Convention Center, San Jose , USA,
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Zn-compensating effect of channel of InGaAs nanowire/Si heterojunction tunnel FET and steep-turn on switching property2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      E-MRS 2013 Spring Meeting
    • Place of Presentation
      Congress Center, Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Wurtzite InP/GaP core-shell nanowires toward direct band gap transition2013

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
    • Place of Presentation
      Imperial Palase Hotel, Annecy, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      TMU-IAS Focus Workshop
    • Place of Presentation
      Technische Universitat Munchen, Munich, Germany
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Demonstration of P-Channel Tunnel FET Using Zn-Doped InAs Nanowire/Si Heterojunction and Doping Effect2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, and Takashi Fukui
    • Organizer
      MRS fall meeting 2013
    • Place of Presentation
      Hynes Convention Center, Boston, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
    • Organizer
      Nanowires 2013
    • Place of Presentation
      Weizman Institute of Science, Rehovot, Israel
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] High-performance III-V nanowire transistors on silicon2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The Sweden-Japan Workshop on Quantum Nano-Physics and Electronics(QNANO2013)
    • Place of Presentation
      東京大学(東京)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical III-V Nanowire-Channel on Si2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      224th ECS meeting
    • Place of Presentation
      Hilton San Francisco Union Square, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channels on Si; vertical FET applications2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      2013 Silicon nanoelectronics Workshop (SNW 2013)
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto, KYoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor nanowires and their photovoltaic device applications2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
    • Organizer
      12th International Conference on Atomically Controlled Surface, Interface and Nanostructures(ACSIN-12)
    • Place of Presentation
      Tsukuba Convention Center, Tsukuba, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si and their applications2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The 40th International Symposium on Compound Semiconductors (ISCS 2013)
    • Place of Presentation
      Kobe Convantion Center, Kobe, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs axial junction nanowire array solar cells with AlInP passivation layer2013

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
    • Place of Presentation
      Imperial Palase Hotel, Annecy, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Characterization of InGaAs Axial Junction Nanowire Array Solar Cells2013

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      26th International Microprocesses and Nanotechnology Conference (MNC2013)
    • Place of Presentation
      Roiton Sapporo, Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs nanowire FETs on Si and steep subthreshold-slope transistors2013

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)
    • Place of Presentation
      Hakodate Kokusai Hotal, Hakodate, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V/Si Heterojunctions for Steep Subthreshold-Slope Transistor2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      Third Berkeley Symposium on Energy Efficient Electronic Systems
    • Place of Presentation
      University of California Berkeley Banato Hall, Berkeley, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui
    • Organizer
      2013 International Electron Devices Meeting
    • Place of Presentation
      Washington Hilton, Washington DC, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] ITO/p-InP Hetero-Junction NW-Array Solar Cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 2013 Europe Material Research Society (E-MRS) Spring Meeting
    • Place of Presentation
      Cogress Center, Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      71st Device Research Conference (DRC 2013)
    • Place of Presentation
      Notre Dame University, Notre Dome, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of ITO/p-InP hetero-junction nanowire-array solar cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet Biwko, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Bi-directional growth of Zn-doped InP nanowires by selective-area MOVPE2012

    • Author(s)
      K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] First demonstration of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka, M. Yoshimura, and T. Fukui
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep-slope tunnel field-effect transistors using III-V nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      IEEE VLSI symposia
    • Place of Presentation
      Hilton Hawaian Village(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      The 16th International Conference on Metal- Organic Vapor Phase Epitaxy (ICMOVPE-XVI),
    • Place of Presentation
      Paradise Hotel Busan(KOREA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InP/AlInP core-multishell nanowire array solar cells2012

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 39th Internal Symposium on Compound Semiconductor
    • Place of Presentation
      University of Calfornia Santa Barbara(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Bi-directional growth of InP nanowires by selective-area MOVPE2012

    • Author(s)
      K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui
    • Organizer
      the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
    • Place of Presentation
      The University of Queensland(Australia)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Flexible InP nanowire array obtained by epitaxial growth and peeling off process for solar cell application2012

    • Author(s)
      T. Endo, E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
    • Organizer
      25th International Microprocesses and Nanotechnology Conference (MNC 2012)
    • Place of Presentation
      神戸メリケンパークオリエンタルホテル(神戸市
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] GaAs/InGaP core-multishell nanowire array solar cells by selective-area metal organic vapor phase epitaxy2012

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T.Fukui
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices2012

    • Author(s)
      K. Tomioka, M. Yoshimura, and T. Fukui
    • Organizer
      The 16th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Paradise Hotel Busan(KOREA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si and their applications2012

    • Author(s)
      K. Tomioka, T. Fukui
    • Organizer
      25th International Microprocesses and Nanotechnology Conference (MNC 2012)
    • Place of Presentation
      神戸メリケンパークオリエンタルホテル(神戸市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Keitaro Ikejiri, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
    • Place of Presentation
      The University of Queensland(Australia)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Realization of steep-slope behavior in tunnel FETs using InAs nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      MRS spring meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaP Nanowires grown by Selective-Area MOVPE2012

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM2012),
    • Place of Presentation
      京都国際会議場(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] GaAs core-shell nanowire array solar cells on masked GaAs (111)B substrates2012

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      9th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS)
    • Place of Presentation
      Eindhoven University of Technology(Netherlands)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Takahito Endo, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] First demonstration of tunnel field-effect transistor using InGaAs/Si junction2012

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会議場(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor nanowires and their electronics and photonic device applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      Japan-Sweden QNANO Workshop
    • Place of Presentation
      Clarion Hotel Visby (Sweden)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical In0.7Ga0.3As Nanowire Surrounding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011

    • Author(s)
      K. Tomioka, M, Yoshimura, and T. Fukui
    • Organizer
      2011 IEEE International Electron Devices Meeting
    • Place of Presentation
      Hilton Washington(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of InP Nanowire Array Solar Cells using Selective-Area Metal-Organic Vapor Phase Epitaxy2011

    • Author(s)
      M. Yoshimura, K. Tomioka, E. Nakai, and T. Fukui
    • Organizer
      JSPS-RSAS Joint Conference “Capturing the Sun”
    • Place of Presentation
      Royal Swedish Academy of Science, Stockholm(Sweden)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Optical Property of GaAs Nanowire Array for Solar Cell Applications2011

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
    • Organizer
      the 24th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      ANAホテル(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Tunnel Field-Effect Transistors using InAs Nanowire/Si Heterojunction2011

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V compound semiconductor nanowires and their electrical and optical applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      The 7th International Conference on Advanced Materials and Devices
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs nanowire vertical surrounding-gate transistor on Si2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Characterization of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011

    • Author(s)
      K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
    • Organizer
      The 38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Maritim pro Arte Hotel, Berlin(Germany)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications2011

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui
    • Organizer
      MRS spring meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs Nanowires-based vertical surrounding-gate FETs on Si2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui
    • Organizer
      The 15th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Mechanism on structural transition of InP nanowires by selective-area MOVPE2011

    • Author(s)
      K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
    • Organizer
      2011 Materials Research Society Fall Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Characterization of InP nanowire array solar cells using selective-area metal-organic vapor phase epitaxy2011

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Tunnel field-effect transistor using InAs nanowire/Si heterojunction2011

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The 15th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011

    • Author(s)
      K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Semiconductor nanowires and their photovoltaic applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, and K. Tomioka
    • Organizer
      JSPS-RSAS Joint Conference on Capturing the Sun
    • Place of Presentation
      Royal Swedish Academy of Science, Stockholm(Sweden)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of Vertical In0.7Ga0.3As Nanowire Surrouding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Organizer
      24th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      ANAホテル(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs/InP/InAlAs Core-Multishell Nanowire-Based Surrounding-Gate Transistors on Si Substrate2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      MRS 2011 Fall meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound-Semiconductor Nanowire Solar Cells2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics
    • Place of Presentation
      長良川国際会議場(岐阜市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of III-V Nanowire-based Surrounding-Gate Transistors on Si Substrate2011

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    • Organizer
      the 220th Electrochemical Society Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of wurtzite InP/AlGaP core-shell nanowires

    • Author(s)
      J. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
    • Organizer
      17th International Conference on Metalorganic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-Area Growth of III-V Nanowires and Their Devices

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Muyi Chen, Takashi Fukui
    • Organizer
      MRS fall meeting 2014
    • Place of Presentation
      Hynes Convention Center, Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs axial junction nanowire array solar cells with Sn-doped contact layer

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      17th International Conference on Metalorganic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      225th ECS meeting
    • Place of Presentation
      Hilton Bonnet Creek、Orland, USA
    • Year and Date
      2014-05-12 – 2014-05-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertically aligned semiconductor nanowires and their applications

    • Author(s)
      T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
    • Organizer
      42nd Conference on the Physics and Chemistry of Surfaces and Interfaces
    • Place of Presentation
      Snowbird Resort, Utah, USA
    • Year and Date
      2015-01-18 – 2015-01-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowires on patterned Si substrates and their applications

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      10th International Workshop on Epitaxial Semiconductor on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2014)
    • Place of Presentation
      Trunseo International Academy, Traunkirchen,Austria
    • Year and Date
      2015-07-20 – 2015-07-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba Conference Center, Tsukuba
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor hetero-structure nanowires and their photonic applications

    • Author(s)
      K. Tomioka, E. Nakai, F. Ishizaka and T. Fukui
    • Organizer
      WE Heraeus Seminar on III-V Nanowire Photonics
    • Place of Presentation
      Physikzentrum Bad Honnef, Bad Honnef , Germany
    • Year and Date
      2015-03-22 – 2015-03-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of InAs nanowire inside Si(100) and SOI substrates toward tunnel FET applications

    • Author(s)
      K. Tomioka, F. Ishizaka, and T. Fukui
    • Organizer
      the 17th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channel and III-V/Si heterojunction for low-power switches

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      IEEE EUROSOI-ULIS 2015
    • Place of Presentation
      Aula Prodi Piazza San Gionvanni in Monte, Bologna, Italy
    • Year and Date
      2014-07-26 – 2014-07-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of III-V nanowires on Si and their applications

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      8th Nanowire Growth Workshop/Nanowire 2014
    • Place of Presentation
      Strijp-S Eindhoven, Eindhoven, Germany
    • Year and Date
      2015-08-25 – 2015-08-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor nanowires and their photovoltaic applications

    • Author(s)
      T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
    • Organizer
      3rd biennial Conference of the Combined Australian Materials Societies
    • Place of Presentation
      University of Australia, Sydoney, Australia
    • Year and Date
      2014-11-26 – 2014-11-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of vertical InAs nanowires on Ge(111)

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      17thInternational Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII)
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells

    • Author(s)
      Takashi Fukui1, Eiji Nakai1, MuYi Chen1 and Katsuhiro Tomioka
    • Organizer
      Topical Meetings on Optical Nanostructures and Advanced Materials for Photovoltaics (PV)
    • Place of Presentation
      Australian National University, Canberra, Australia
    • Year and Date
      2014-12-02 – 2014-12-04
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Wurtzite InP/AlGaP Core-Shell Nanowires toward Direct Band Gap Transition

    • Author(s)
      F. Ishizaka, K. Tomioka, and T. Fukui
    • Organizer
      MRS Spring Meeting 2014
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2014-04-21 – 2014-04-25
    • Data Source
      KAKENHI-PROJECT-23221007
  • 1.  Junichi Motohisa (60212263)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 73 results
  • 2.  Fukui Takashi (30240641)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 118 results
  • 3.  原 真二郎 (50374616)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  池辺 将之 (20374613)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  深田 直樹 (90302207)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  J. Wipakorn (40748216)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  宮崎 剛 (50354147)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  松村 亮 (90806358)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  SASAKURA Hirotaka
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 10.  KONDO Kenji
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 11.  OTSUKA Paul
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 4 results
  • 12.  松田 理
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 13.  WRIGHT Oliver B
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 14.  友田 基信
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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