SAWAKI Nobuhiko 澤木宣彦

… Alternative Names

沢木宣彦サワキノブヒコ

澤木宜彦サワキノブヒコ

澤木宣彦サワキノブヒコ

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Researcher Number	70023330
Other IDs
External Links
Affiliation (Current)	2023: 愛知工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2010 – 2014: 愛知工業大学, 工学部, 教授 2007 – 2008: Nagoya University, 大学院・工学研究科, 教授 2006: 名古屋大学, 大学院工学研究科, 教授 2004 – 2005: 名古屋大学, 大学院・工学研究科, 教授 1997 – 2004: 名古屋大学, 工学研究科, 教授 … More 1991 – 1996: 名古屋大学, 工学部, 教授 1989: 名古屋大学, 工学部, 教授 1987 – 1988: 名古屋大学, 工学部, 助教授 1986: Nagoya University, School of Engineering., 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator 電子材料工学 / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Science and Engineering / Applied optics/Quantum optical engineering Except Principal Investigator 表面界面物性 / Science and Engineering / 電子材料工学 / Electron device/Electronic equipment
Keywords	Principal Investigator トンネル効果 / フェムト秒分光 / ホットエレクトロン / 実空間遷移 / 二重量子井戸 / 窒化物半導体 / GaN / 超格子 / ホトルミネセンス / 電子波干渉 … More / 量子井戸 / 光変調器 / 結合量子井戸 / 光非線形性 / 選択成長 / シリコン基板 / 格子欠陥 / ホトルミネッセンス / 電子格子相互作用 / エネルギー緩和 / フォノン散乱 / 量子準位共鳴 / 反交差現象 / 光変調 / 光吸収 / MOVPE / 不純物ドーピング / ファセット成長 / 光デバイス / 面間拡散 / 光導波路 / TEM / 不純物散乱 / 量子細線 / 励起子 / GaAs / 二重量子井戸構造 / 電子・格子相互作用 / トランジスタ / 飛行時間法 / 界面凹凸散乱 / 波動関数の局在・非局在 / メゾスコピック / 神経回路網 / 微小FET / 電子波束 / パーコレーション / 表面プラズモン、 / 結合ドット / クーロンブロッケード / 非対称結合量子井戸 / 光非線刑性 / 光制御 / フェトム秒分光 / キャリア寿命 / 光透過 / 量子閉込めシュタルク効果 / 多波光制御 / p-i構造 / ナノへテロ構造 / ナノヘテロ構造 / 時間分解分光 / Si基板 / 界面構造 / 電子線ホログラフィー / 有機金属気相成長 / 透過電子顕微鏡観察 / 遠赤外吸収スペクトル / シリコンホトニクス / MOVPE成長 / 疑似格子整合 / PL / TEM観察 / FTIR評価 / 太陽電池 / ビルトイン電界効果 / 分極電界 / 格子空孔 / 黄色帯発光 / インパクトイオン化 / 炭素ドーピング / 電界効果 / ヘテロ構造 / ｐｎ接合 / 分極電荷 / 結晶欠陥 / トランスポート / ピエゾ電界 / 多重量子井戸 / LOフォノン散乱 / フォトルミネセンス / 二次元電子ガス / 二次元電子 / フォトルミネッセンス / 薄膜多層構造 / DOUBLE QUANTUM WELL / HOT ELECTRON / TUNNELING / QUANTUM WIRE / PHONON SCATTERING / FEMTOSECOND SPECTROSCOPY / TWO DIMENSIONAL ELECTRON GAS / 量子準位共鳴効果 / 電子波混合 / デルタドープ構造 / Coupled Quantum Well / Resonance of Electronic States / Optical Nonlinearity / Wave Mixing / Photoluminescence / Optical Absorption / Exiton / Modulator / 微細構造 / 傾斜基板 / ミネッセンス / フィールドエミッタ / カソードルミネッセンス / サブミクロン微細構造 / ナノメトール量子構造 / バンド端発光 / 格子歪み / III nitrides / selective growth / nano-structure / quantum well / defects / off axis substrate / luminescence / field emitter / イメージセンサ / 非線形デバイス / ポンプ・プローブ法 / 電子・正孔対 / 準位共鳴 / optical modulator / coupled quantum wells / tunneling / optical nonlinearity / femto-second spectroscopy / optical device / Quantum confined Stark effect / ヘテロエピタキシ / 選択成長法 / 表面拡散 / MOVPE法 / HVPE法 / 量子ドット / ダブルヘテロ構造 / 伝導性制御 / 三族窒化物 / 緩衝層 / 異種基板 / Hetero-epitaxy / Selective growth / Growth on facets / Surface diffusion / HVPE / Quantum dot / サブミクロン電子デバイス / ヘテロ接合 / 格子散乱 / Sub-micron electron device / Hot electron / Hetero-structure / Superlattice / Phonon scattering / Impurity scattering / Real space transfer … More Except Principal Investigator 単電子デバイス / ナノ構造 / GaN / MOVPE / バッファ層 / GaN HEMT / MISHEMT / Si_3N_4 / 単電子トランジスタ / クーロンブロッケード / 集積回路 / 量子現象 / トンネル現象 / 選択成長 / 半極性・非極性 / Si基板 / InGaN / 半極性 / 無極性 / ワイドギャップ半導体 / 青色発光 / 気相成長 / 有機金属化学気相法 / ホトルミネセンス / 混晶半導体 / 不純物 / GaAlN / pn接合形青色LED / カソ-ドルルミネッセンス / Mg添加 / p形GaN / 多層構造 / A1GaN / 青色LED / Zn添加 / MIS構造 / カソードルミネッセンス / 表面・界面 / トンネル障壁 / 量子ドット / 量子デバイス / 原子スケール制御 / 高密度集積化 / Single electron devices / nanostructure / surfaces and interfaces / tunnel barrier / quantum dot / quantum devices / atomic-scale control / high-density intgration / 耐圧 / 電流DLTS / ZrO_2 / 傾斜リセス / ゲートリーク電流 / 電子速度 / 傾斜リセス構造 / ノーマリオフ型 / フッ素プラズマ処理 / MBE / DLTS / 深い準位 / GaN MISHEM / 電流コラプス / 高誘電率膜 / KFM / 電位測定 / GaN MISHEMT / breakdown voltage / current DLTS / HfO_2 / inclined gate recess / gate leakage current Less

A high efficiency III nitride solar cell with graded composition top layerPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
Growth of high quality GaN on an Si substratePrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substratePrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2004 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究Principal Investigator
- Principal Investigator
  
  沢木宣彦
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATEPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
半導体結合量子ドット構造による疑似神経回路網の作製Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Selective Growth of GaN pyramids and study of their optical and electronic propertiesPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wellsPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
"Control of surface and interfaces of nano-structures for single electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  HOKKAIDO UNIVERSITY
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
単電子ナノエレクトロニクスの基礎
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well StructuresPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  NAGOYA UNIVERSITY
Tunneling Phenomena in GaAs/AlGaAs Double Quantum Well StructuresPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  NAGOYA UNIVERSITY
GaAs/ALGaAs 二重量子井戸構造のホットエレクトロン効果に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
半導体超格子のホットエレクトロン効果に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
高エネルギーギャップ半導体の結晶成長と光学的性質に関する研究
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
高性能GaN系青色LEDの試作研究
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  1987 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
Study of hot electron effect in sub-micron semiconductor devices.Principal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  NAGOYA UNIVERSITY

[Book] Integration with silicon based microelectronics2011
- Author(s)
  J.Li, J.Y.Lin, H.X.Jiang, and N.Sawaki, CRC Press (Taylor & Francis Group)
- Total Pages
  593
- Publisher
  III-V compound semiconductors;
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Resonant Raman and FTIR spectra of carbon doped GaN2015
- Author(s)
  S.Ito, H.Kobayashi, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Journal Title
  
  J. Crystal Growth
  
  Volume: 414 Pages: 56-61
- DOI
  10.1016/j.jcrysgro.2014.11.024
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Nature of yellow luminescence band in GaN grown on Si substrate2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, T.Hikosaka, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11S Pages: 11RC02-11RC02
- DOI
  10.7567/jjap.53.11rc02
- NAID
  210000144631
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Volume: 8625 Pages: 6-6
- DOI
  10.1117/12.2002738
- Data Source
  KAKENHI-PROJECT-22360009, KAKENHI-PROJECT-24656019
[Journal Article] Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy2013
- Author(s)
  J.Y.Kim, G.S.Lee, S.G.Jung, M.A.Park, M.J.Shin, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S.W.Kim, H.S.Lee, H.S.Kang, H.S.Jeon, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 11S Pages: 11NG03-11NG03
- DOI
  10.7567/jjap.52.11ng03
- NAID
  210000143121
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots2013
- Author(s)
  M.Kim, M.J.Shin, D.Gwon, H.S.Ahn, S.N.Yi, P.S.Kim, S.C.Yoon, C.Lee, J.Park, K.Shin, D.H.Ha, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 1S Pages: 01AD02-01AD02
- DOI
  10.7567/jjap.52.01ad02
- NAID
  210000141765
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Strain relaxation in thick (1-1-0) InGaN grown on GaN/Si substrate2012
- Author(s)
  T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
- Journal Title
  
  physica status solidi B
  
  Volume: 249 Pages: 468-471
- DOI
  10.1002/pssb.201100445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J08362, KAKENHI-PROJECT-22360009
[Journal Article] Fabrication of AlGaN-based vertical light-emitting diodes2012
- Author(s)
  S.M.Bae, H.S.Jeon, G.S.Lee, S-G.Jung, K.H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H-J.Ha and N.Sawaki
- Journal Title
  
  J. Ceramic Processing Research
  
  Volume: 13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Impurity incorporation in semipolar (1-101)GaN grown on Si substrate2012
- Author(s)
  N.Sawaki, K.Hagiwara, T.Hikosaka, and Y.Honda
- Journal Title
  
  Semiconductor Science & Technology
  
  Pages: 5-5
- DOI
  10.1088/0268-1242/27/2/024006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Characterization of GaN on GaN LED by HVPE method2012
- Author(s)
  S-G.Jung, H.S.Jeon, G.S.Lee, S.M.Bae, K-H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H.J.Ha and N.Sawaki
- Journal Title
  
  J. Ceramic Processing Research
  
  Volume: 13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] High efficiency InGaN solar cell with a graded p-InGaN top layer2012
- Author(s)
  N.Sawaki, T.Fujisawa
- Journal Title
  
  Proc.of SPIE
  
  Volume: 8262
- DOI
  10.1117/12.905531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Pages: 7-7
- DOI
  10.1117/12.905529
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Nitride LEDs on Si substrate2011
- Author(s)
  N.Sawaki and Y.Honda
- Journal Title
  
  Science China Technological Sciences
  
  Pages: 38-41
- DOI
  10.1007/s11431-010-4182-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Nitride LEDs on Si substrate2011
- Author(s)
  N.Sawaki
- Journal Title
  
  Science China
  
  Volume: 54 Pages: 38-41
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates2011
- Author(s)
  I.W.Feng, X.K.Cao, J.Li, J.Y.Lin,H.X.Jiang, N.Sawaki, Y.Honda,T.Tanikawa, and J.M.Zavada
- Journal Title
  
  Appl. Phys. Lett.
  
  Pages: 3-3
- DOI
  10.1063/1.3556678
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy2011
- Author(s)
  T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 1S1 Pages: 01AD04-01AD04
- DOI
  10.1143/jjap.50.01ad04
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates2011
- Author(s)
  C.H.Chiu, T.Tanikawa, N.Sawaki, 他
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 1 Pages: 012105-012105
- DOI
  10.1143/apex.4.012105
- NAID
  10027782333
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate2010
- Author(s)
  T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  physica status solidi C
  
  Pages: 1760-1763
- DOI
  10.1002/pssc.200983563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
- Journal Title
  
  J. Crystal Growth Online 14 Jan. doi.10.1016
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2966-2968
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates2008
- Author(s)
  T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2234-2237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008
- Author(s)
  N. Sawaki
- Journal Title
  
  Proc. SPIE 7279
  
  Pages: 727902-727902
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 310
  
  Pages: 4999-5002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate2007
- Author(s)
  T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Appl. Phys 101.103513
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Acceptor Level due to Carbon in a (1-101) AIGaN2007
- Author(s)
  N. Sawaki, 他
- Journal Title
  
  AIP Conf. Proc. 893(CD-ROM)
  
  Pages: 281-281
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE2007
- Author(s)
  Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 4
  
  Pages: 2740-2743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures2007
- Author(s)
  X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Phys.: Condens. Matter 19, 046204
  
  Pages: 1-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE2007
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 298
  
  Pages: 207-210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si2006
- Author(s)
  Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1915-1918
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・10A
  
  Pages: 7655-7660
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE2006
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (b) 243・7
  
  Pages: 1665-1668
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat.sol 3
  
  Pages: 1425-1428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical phonon-modes and electron-phonon interaction in a quantum dot2006
- Author(s)
  M.Ishidal, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Springer Proceedings in Physics Series 110
  
  Pages: 253-256
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure2006
- Author(s)
  H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・5A
  
  Pages: 4015-4017
- NAID
  40007248571
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1425-1428
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2349-2352
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 2
  
  Pages: 2349-2352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2005
- Author(s)
  T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
- Journal Title
  
  IOP Conf.Series 184
  
  Pages: 251-254
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE2005
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 284
  
  Pages: 341-346
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Electrical and optical properties of (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2004
- Author(s)
  N.Sawaki
- Journal Title
  
  Proc. 5th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipment
  
  Pages: 30-35
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate2004
- Author(s)
  T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett 84
  
  Pages: 4717-4719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2250-2253
- NAID
  10010801569
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN
- Author(s)
  Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett.
  
  Pages: 98-98
- DOI
  10.1063/1.3549561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Patent] 窒化物半導体構造およびその製造方法2007
- Inventor(s)
  澤木宣彦、本田善央、彦坂年輝、谷川智之
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-06-07
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] FTIR spectra in a heavily carbon doped (0001)GaN2014
- Author(s)
  K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Nature of yellow luminescence band in high quality GaN2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Epitaxial relationship and nano-structures at GaN/Si interface2013
- Author(s)
  N.Sawaki
- Organizer
  EMN2013- Open Access 2013
- Place of Presentation
  Chengdu
- Invited
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013, Feb. 4
- Place of Presentation
  San Francisco (USA).
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Coalescence and generation of stacking faults in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 半極性(1-101)GaN における積層欠陥の振る舞い2013
- Author(s)
  中北太平、伊藤翔悟、岩田博之、澤木宣彦、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Growth of high quality GaN on (111)Si using AlN:In nucleation layer2013
- Author(s)
  S.Ito, T.Nakagita, S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] nda, M.Yamaguchi, and H.Amano, "Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Ho
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Si基板上GaN/AlInNエピタキシャル膜のPLスペクトル2013
- Author(s)
  伊藤翔悟、中北太平、澤木宣彦、入江将嗣、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] A high efficiency InGaN solar cell with graded composition p-InGaN top layer2013
- Author(s)
  T.Fujisawa and N.Sawaki,
- Organizer
  ISPlasama 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE-OPTO 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on NitrideSemiconductors
- Place of Presentation
  Sapporo.
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, N.Sawaki, 他
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai, Aichi, Japan
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, 他
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  SanFrancisco, CA, USA
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012
- Author(s)
  K.Hagiwara, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 傾斜組成トップ層によるInGaN太陽電池の高効率化2012
- Author(s)
  藤澤知樹，澤木宣彦
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  豊橋市、日本
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  San Francisco (USA).
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012
- Author(s)
  K.Hagiwara, N.Sawaki, 他
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai, Aichi, Japan
- Year and Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011
- Author(s)
  N.Sawaki
- Organizer
  DPG Spring Meetings, Deutsche Physikalische Gesellschaft
- Place of Presentation
  Dresden, Germany
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2011
- Author(s)
  T.Tanikawa, N.Sawaki, 他
- Organizer
  9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Grasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba.
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, N.Sawaki, 他
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth, characterization, and crystallographic orientation of overgrown GaN layers on nanostructures by HVPE2011
- Author(s)
  M.J.Kim, M.J.Shin, N.Sawaki, 他
- Organizer
  9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Grasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011
- Author(s)
  K.Hagiwara, R.Katayama, M.Amano, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano, "High-quality GaN grown on (111)Si using an AlInN intermediate layer," Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), May 23 (2011), Toba.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR spectra and LVMs in a carbon doped (1-101)GaN grown on a (001)Si substrate by MOVPE," ISPlasma2011
- Author(s)
  K.Hagiwara, M.Amano, R.Katayama, N.Sawaki, Y.Honda, T.Hikosaka, T.Tanikawa, N.Koide, M.Yamaguchi, and H.Amano
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011
- Author(s)
  N.Sawaki
- Organizer
  DPG Spring Meetings, Deutsche Physikalische Gesellschaft
- Place of Presentation
  Dresden (Germany).
- Year and Date
  2011-05-17
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011
- Author(s)
  K.Hagiwara, N.Sawaki, 他
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Nitride LEDs on Si substrate2010
- Author(s)
  N.Sawaki
- Organizer
  ISSLED-8
- Place of Presentation
  Beijing、China
- Year and Date
  2010-05-20
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 加工シリコン基板上への窒化物半導体選択ヘテロエピタキシ2010
- Author(s)
  澤木宣彦
- Organizer
  仙台結晶成長学会バルク結晶分科会研究会
- Place of Presentation
  東北大学、仙台市
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited)2008
- Author(s)
  N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
- Organizer
  ISGN-2
- Place of Presentation
  Izu
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Compound semiconductors- The crystal growth and creation of new functions-2008
- Author(s)
  N. Sawaki
- Organizer
  27 th Electronic Materials. Symposium
- Place of Presentation
  Izu (Japan)
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Compound semiconductors- The crystal growth and creation of new functions-(Plenary)2008
- Author(s)
  N.Sawaki
- Organizer
  EMS-27
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate2008
- Author(s)
  N. Sawaki, 他
- Organizer
  2nd Intern. Symp. Growth of Nitrides
- Place of Presentation
  Izu (Japan)
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008
- Author(s)
  N.Sawaki, N.Sawaki
- Organizer
  POEM2008
- Place of Presentation
  Wuhan
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Time-resolved spectroscopy in an undoped GaN (1-101)2007
- Author(s)
  EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  HCIS-15
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 窒化物半導体材料とデバイスの将来展望(プレナリー)2007
- Author(s)
  澤木宣彦
- Organizer
  SiCおよび関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN2007
- Author(s)
  J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  ICNS-7
- Place of Presentation
  Las Vegas
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性2007
- Author(s)
  彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
- Organizer
  JSPS-162研究会
- Place of Presentation
  川口屋リバーサイドホテル
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001) GaN and (1-101) GaN2007
- Author(s)
  N. Sawaki, 他
- Organizer
  7 th Intern. Conf. on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas (USA)
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 窒化物半導体材料とデバイスの将来展望2007
- Author(s)
  澤木宣彦
- Organizer
  第17回SiCおよび関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Year and Date
  2007-11-29
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN2006
- Author(s)
  N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
- Organizer
  28th ICPS
- Place of Presentation
  Wien
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Improvement of crystalline quality of GaN on Si by an AlInN nucleation layer
- Author(s)
  T.Yagi, R.Tanabe, T.Kanematsu, H.Kobayashi, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Effect of annealing on the defect related emission in GaN grown on Si substrate
- Author(s)
  H.Kobayashi, T.Yagi, R.Tanabe, T.Kanematsu,H.Iwata, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  APWS 2015
- Place of Presentation
  The K Seoul Hotel (Seoul, Korea)
- Year and Date
  2015-05-17 – 2015-05-20
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Characteristics of high-quality AlN thick film grown on c-sapphire substrates by HVPE method
- Author(s)
  G.S.Lee, H.S.Jeon, C.M.Lee, C.B.Lee, S.N.Yi, M.Yang, H.S.Ahn, S.W.Kim, Y.M.Yu, and N.Sawaki
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] 炭素ドープ半極性(1-101)GaN の光学特性
- Author(s)
  小林宙主、澤木宣彦、山下康平、彦坂年輝、本田善央、天野浩
- Organizer
  平成26年電気電子情報関係学会東海支部連合大会
- Place of Presentation
  中京大学（名古屋市天白区）
- Year and Date
  2014-09-08 – 2014-09-09
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Optical spectra and yellow luminescence in C doped GaN
- Author(s)
  H.Kobayashi, N.Sawaki, K.Yamashitta, T.Hikosaka, Y.Honda, and H.Aman
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Resonant Raman and FTIR spectra of carbon doped GaN
- Author(s)
  S.Ito, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ICMOVPE 2014
- Place of Presentation
  EPFL(Lousanne, Swiss)
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-24656019

1. YAMAGUCHI Masahito (20273261)

# of Collaborated Projects: 8 results

# of Collaborated Products: 26 results
2. AKASAKI Isamu (20144115)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. HONDA Yoshio (60362274)

# of Collaborated Projects: 5 results

# of Collaborated Products: 63 results
4. GOTO Hideo (00195942)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
5. HASEGAWA Hideki (60001781)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. SUGANO Takuo (50010707)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. TANAKA Shigeyasu (70217032)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
8. 平松和政 (50165205)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 安亨洙 (40303672)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. IWATA Hiroyuki (20261034)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
11. KOMA Atsushi (00010950)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. IWAMI Motohiro (80029123)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. YASUDA Yukio (60126951)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. MIZUTANI Takashi (70273290)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
15. KISHIMOTO shigeru (10186215)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
16. OHNO Yutaka (10324451)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. 川辺光央 (80029446)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 榊裕之 (90013226)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 川村清 (00011619)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 天野浩 (60202694)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SUZUKI Takamasa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 橋本雅文

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAWAKI Nobuhiko 澤木 宣彦

沢木 宣彦 サワキ ノブヒコ

澤木 宜彦 サワキ ノブヒコ

澤木 宣彦 サワキ ノブヒコ

Research Projects

Research Products

Co-Researchers

A high efficiency III nitride solar cell with graded composition top layerPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

Growth of high quality GaN on an Si substratePrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substratePrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs

Principal Investigator

Project Period (FY)

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Research Institution

結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATEPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

半導体結合量子ドット構造による疑似神経回路網の作製Principal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

Selective Growth of GaN pyramids and study of their optical and electronic propertiesPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wellsPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

二重量子井戸構造における電子波干渉効果Principal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

"Control of surface and interfaces of nano-structures for single electron devices"

Principal Investigator

SAWAKI Nobuhiko 澤木宣彦

沢木宣彦サワキノブヒコ

澤木宜彦サワキノブヒコ

澤木宣彦サワキノブヒコ