SAWAKI Nobuhiko 澤木宣彦

… Alternative Names

澤木宣彦サワキノブヒコ

沢木宣彦サワキノブヒコ

澤木宜彦サワキノブヒコ

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Researcher Number	70023330
Other IDs
External Links
Affiliation (Current)	2025: 愛知工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2010 – 2014: 愛知工業大学, 工学部, 教授 2007 – 2008: Nagoya University, 大学院・工学研究科, 教授 2006: 名古屋大学, 大学院工学研究科, 教授 2004 – 2005: 名古屋大学, 大学院・工学研究科, 教授 1997 – 2004: 名古屋大学, 工学研究科, 教授 … More 1991 – 1996: 名古屋大学, 工学部, 教授 1989: 名古屋大学, 工学部, 教授 1987 – 1988: 名古屋大学, 工学部, 助教授 1986: Nagoya University, School of Engineering., 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子材料工学 / Applied materials science/Crystal engineering / Science and Engineering / Applied optics/Quantum optical engineering Except Principal Investigator Electron device/Electronic equipment / 電子材料工学 / Science and Engineering / 表面界面物性
Keywords	Principal Investigator トンネル効果 / フェムト秒分光 / GaN / 窒化物半導体 / 二重量子井戸 / 実空間遷移 / ホットエレクトロン / ホトルミネッセンス / 格子欠陥 / シリコン基板 … More / 選択成長 / 光非線形性 / 結合量子井戸 / 光変調器 / 量子井戸 / 電子波干渉 / ホトルミネセンス / 超格子 / GaAs / 励起子 / 量子細線 / 不純物散乱 / TEM / 光導波路 / 面間拡散 / 光デバイス / ファセット成長 / 不純物ドーピング / MOVPE / 光吸収 / 光変調 / 反交差現象 / 量子準位共鳴 / フォノン散乱 / エネルギー緩和 / 電子格子相互作用 / Real space transfer / Impurity scattering / Phonon scattering / Superlattice / Hetero-structure / Hot electron / Sub-micron electron device / 格子散乱 / ヘテロ接合 / サブミクロン電子デバイス / Quantum dot / HVPE / Surface diffusion / Growth on facets / Selective growth / Hetero-epitaxy / 異種基板 / 緩衝層 / 三族窒化物 / 伝導性制御 / ダブルヘテロ構造 / 量子ドット / HVPE法 / MOVPE法 / 表面拡散 / 選択成長法 / ヘテロエピタキシ / Quantum confined Stark effect / optical device / femto-second spectroscopy / optical nonlinearity / tunneling / coupled quantum wells / optical modulator / 準位共鳴 / 電子・正孔対 / ポンプ・プローブ法 / 非線形デバイス / イメージセンサ / field emitter / luminescence / off axis substrate / defects / quantum well / nano-structure / selective growth / III nitrides / 格子歪み / バンド端発光 / ナノメトール量子構造 / サブミクロン微細構造 / カソードルミネッセンス / フィールドエミッタ / ミネッセンス / 傾斜基板 / 微細構造 / Modulator / Exiton / Optical Absorption / Photoluminescence / Wave Mixing / Optical Nonlinearity / Resonance of Electronic States / Coupled Quantum Well / デルタドープ構造 / 電子波混合 / 量子準位共鳴効果 / TWO DIMENSIONAL ELECTRON GAS / FEMTOSECOND SPECTROSCOPY / PHONON SCATTERING / QUANTUM WIRE / TUNNELING / HOT ELECTRON / DOUBLE QUANTUM WELL / 薄膜多層構造 / フォトルミネッセンス / 二次元電子 / 二次元電子ガス / フォトルミネセンス / LOフォノン散乱 / 多重量子井戸 / ピエゾ電界 / トランスポート / 結晶欠陥 / 分極電荷 / ｐｎ接合 / ヘテロ構造 / 電界効果 / 炭素ドーピング / インパクトイオン化 / 黄色帯発光 / 格子空孔 / 分極電界 / ビルトイン電界効果 / 太陽電池 / FTIR評価 / TEM観察 / PL / 疑似格子整合 / MOVPE成長 / シリコンホトニクス / 遠赤外吸収スペクトル / 透過電子顕微鏡観察 / 有機金属気相成長 / 電子線ホログラフィー / 界面構造 / Si基板 / 時間分解分光 / ナノヘテロ構造 / ナノへテロ構造 / p-i構造 / 多波光制御 / 量子閉込めシュタルク効果 / 光透過 / キャリア寿命 / フェトム秒分光 / 光制御 / 光非線刑性 / 非対称結合量子井戸 / クーロンブロッケード / 結合ドット / 表面プラズモン、 / パーコレーション / 電子波束 / 微小FET / 神経回路網 / メゾスコピック / 波動関数の局在・非局在 / 界面凹凸散乱 / 飛行時間法 / トランジスタ / 電子・格子相互作用 / 二重量子井戸構造 … More Except Principal Investigator Si_3N_4 / MISHEMT / GaN HEMT / バッファ層 / MOVPE / GaN / ナノ構造 / 単電子デバイス / gate leakage current / inclined gate recess / HfO_2 / current DLTS / breakdown voltage / GaN MISHEMT / 電位測定 / KFM / 高誘電率膜 / 電流コラプス / GaN MISHEM / 深い準位 / DLTS / MBE / フッ素プラズマ処理 / ノーマリオフ型 / 傾斜リセス構造 / 電子速度 / ゲートリーク電流 / 傾斜リセス / ZrO_2 / 電流DLTS / 耐圧 / high-density intgration / atomic-scale control / quantum devices / quantum dot / tunnel barrier / surfaces and interfaces / nanostructure / Single electron devices / 高密度集積化 / 原子スケール制御 / 量子デバイス / 量子ドット / トンネル障壁 / 表面・界面 / カソードルミネッセンス / MIS構造 / Zn添加 / 青色LED / A1GaN / 多層構造 / p形GaN / Mg添加 / カソ-ドルルミネッセンス / pn接合形青色LED / GaAlN / 不純物 / 混晶半導体 / ホトルミネセンス / 有機金属化学気相法 / 気相成長 / 青色発光 / ワイドギャップ半導体 / 無極性 / 半極性 / InGaN / Si基板 / 半極性・非極性 / 選択成長 / トンネル現象 / 量子現象 / 集積回路 / クーロンブロッケード / 単電子トランジスタ Less

A high efficiency III nitride solar cell with graded composition top layerPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
Growth of high quality GaN on an Si substratePrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substratePrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2004 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs
- Principal Investigator
  
  MIZUTANI Takashi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
結合多重量子井戸構造による多波光制御に関する研究Principal Investigator
- Principal Investigator
  
  沢木宣彦
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATEPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
半導体結合量子ドット構造による疑似神経回路網の作製Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Selective Growth of GaN pyramids and study of their optical and electronic propertiesPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wellsPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
"Control of surface and interfaces of nano-structures for single electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  HOKKAIDO UNIVERSITY
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
単電子ナノエレクトロニクスの基礎
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
二重量子井戸構造における電子波干渉効果Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well StructuresPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  NAGOYA UNIVERSITY
Tunneling Phenomena in GaAs/AlGaAs Double Quantum Well StructuresPrincipal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  NAGOYA UNIVERSITY
GaAs/ALGaAs 二重量子井戸構造のホットエレクトロン効果に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
半導体超格子のホットエレクトロン効果に関する研究Principal Investigator
- Principal Investigator
  
  澤木宣彦
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
高エネルギーギャップ半導体の結晶成長と光学的性質に関する研究
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
高性能GaN系青色LEDの試作研究
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  1987 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University
Study of hot electron effect in sub-micron semiconductor devices.Principal Investigator
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  NAGOYA UNIVERSITY

[Book] Integration with silicon based microelectronics2011
- Author(s)
  J.Li, J.Y.Lin, H.X.Jiang, and N.Sawaki, CRC Press (Taylor & Francis Group)
- Total Pages
  593
- Publisher
  III-V compound semiconductors;
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Resonant Raman and FTIR spectra of carbon doped GaN2015
- Author(s)
  S.Ito, H.Kobayashi, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Journal Title
  
  J. Crystal Growth
  
  Volume: 414 Pages: 56-61
- DOI
  10.1016/j.jcrysgro.2014.11.024
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Nature of yellow luminescence band in GaN grown on Si substrate2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, T.Hikosaka, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11S Pages: 11RC02-11RC02
- DOI
  10.7567/jjap.53.11rc02
- NAID
  210000144631
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Volume: 8625 Pages: 6-6
- DOI
  10.1117/12.2002738
- Data Source
  KAKENHI-PROJECT-22360009, KAKENHI-PROJECT-24656019
[Journal Article] Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy2013
- Author(s)
  J.Y.Kim, G.S.Lee, S.G.Jung, M.A.Park, M.J.Shin, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S.W.Kim, H.S.Lee, H.S.Kang, H.S.Jeon, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 11S Pages: 11NG03-11NG03
- DOI
  10.7567/jjap.52.11ng03
- NAID
  210000143121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots2013
- Author(s)
  M.Kim, M.J.Shin, D.Gwon, H.S.Ahn, S.N.Yi, P.S.Kim, S.C.Yoon, C.Lee, J.Park, K.Shin, D.H.Ha, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 1S Pages: 01AD02-01AD02
- DOI
  10.7567/jjap.52.01ad02
- NAID
  210000141765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2012
- Author(s)
  T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
- Journal Title
  
  phys.stat.sol.(b)
  
  Volume: 249 Issue: 3 Pages: 468-471
- DOI
  10.1002/pssb.201100445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J08362, KAKENHI-PROJECT-22360009
[Journal Article] Fabrication of AlGaN-based vertical light-emitting diodes2012
- Author(s)
  S.M.Bae, H.S.Jeon, G.S.Lee, S-G.Jung, K.H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H-J.Ha and N.Sawaki
- Journal Title
  
  J. Ceramic Processing Research
  
  Volume: 13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Impurity incorporation in semipolar (1-101)GaN grown on Si substrate2012
- Author(s)
  N.Sawaki, K.Hagiwara, T.Hikosaka, and Y.Honda
- Journal Title
  
  Semiconductor Science & Technology
  
  Volume: 27 Issue: 2 Pages: 5-5
- DOI
  10.1088/0268-1242/27/2/024006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Characterization of GaN on GaN LED by HVPE method2012
- Author(s)
  S-G.Jung, H.S.Jeon, G.S.Lee, S.M.Bae, K-H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H.J.Ha and N.Sawaki
- Journal Title
  
  J. Ceramic Processing Research
  
  Volume: 13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] High efficiency InGaN solar cell with a graded p-InGaN top layer2012
- Author(s)
  N.Sawaki, T.Fujisawa
- Journal Title
  
  Proc.of SPIE
  
  Volume: 8262 Pages: 826210-826210-7
- DOI
  10.1117/12.905531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Pages: 7-7
- DOI
  10.1117/12.905529
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Nitride LEDs on Si substrate2011
- Author(s)
  N.Sawaki and Y.Honda
- Journal Title
  
  Science China Technological Sciences
  
  Volume: 54 Issue: 1 Pages: 38-41
- DOI
  10.1007/s11431-010-4182-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Nitride LEDs on Si substrate2011
- Author(s)
  N.Sawaki
- Journal Title
  
  Science China
  
  Volume: 54 Pages: 38-41
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates2011
- Author(s)
  I.W.Feng, X.K.Cao, J.Li, J.Y.Lin,H.X.Jiang, N.Sawaki, Y.Honda,T.Tanikawa, and J.M.Zavada
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 8 Pages: 3-3
- DOI
  10.1063/1.3556678
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Drastic reduction of dislocation density in semipolar (11-22)GaN stripe crystal on silicon substrate by dual selective metal-organic vapor phase epitaxy2011
- Author(s)
  T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 1S1 Pages: 01AD04-01AD04
- DOI
  10.1143/jjap.50.01ad04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Reduction of efficiency droop in semipolar (1101)InGaN/GaN light emitting diodes grown on patterned silicon substrates2011
- Author(s)
  C.H.Chiu, T.Tanikawa, N.Sawaki, 他
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 4 Issue: 1 Pages: 012105-012105
- DOI
  10.1143/apex.4.012105
- NAID
  10027782333
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN2011
- Author(s)
  Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 5 Pages: 98-98
- DOI
  10.1063/1.3549561
- Year and Date
  2011-01-31
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate2010
- Author(s)
  T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  physica status solidi C
  
  Volume: 7 Issue: 7-8 Pages: 1760-1763
- DOI
  10.1002/pssc.200983563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
- Journal Title
  
  J. Crystal Growth Online 14 Jan. doi.10.1016
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2966-2968
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates2008
- Author(s)
  T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2234-2237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008
- Author(s)
  N. Sawaki
- Journal Title
  
  Proc. SPIE 7279
  
  Pages: 727902-727902
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 310
  
  Pages: 4999-5002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate2007
- Author(s)
  T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Appl. Phys 101.103513
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Acceptor Level due to Carbon in a (1-101) AIGaN2007
- Author(s)
  N. Sawaki, 他
- Journal Title
  
  AIP Conf. Proc. 893(CD-ROM)
  
  Pages: 281-281
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE2007
- Author(s)
  Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 4
  
  Pages: 2740-2743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures2007
- Author(s)
  X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Phys.: Condens. Matter 19, 046204
  
  Pages: 1-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE2007
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 298
  
  Pages: 207-210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si2006
- Author(s)
  Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1915-1918
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・10A
  
  Pages: 7655-7660
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE2006
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (b) 243・7
  
  Pages: 1665-1668
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat.sol 3
  
  Pages: 1425-1428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical phonon-modes and electron-phonon interaction in a quantum dot2006
- Author(s)
  M.Ishidal, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Springer Proceedings in Physics Series 110
  
  Pages: 253-256
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure2006
- Author(s)
  H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・5A
  
  Pages: 4015-4017
- NAID
  40007248571
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1425-1428
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2349-2352
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 2
  
  Pages: 2349-2352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2005
- Author(s)
  T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
- Journal Title
  
  IOP Conf.Series 184
  
  Pages: 251-254
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE2005
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 284
  
  Pages: 341-346
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Electrical and optical properties of (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2004
- Author(s)
  N.Sawaki
- Journal Title
  
  Proc. 5th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipment
  
  Pages: 30-35
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate2004
- Author(s)
  T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett 84
  
  Pages: 4717-4719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003
- Author(s)
  K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B
  
  Pages: 2250-2253
- NAID
  10010801569
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206040
[Patent] 窒化物半導体構造およびその製造方法2007
- Inventor(s)
  澤木宣彦、本田善央、彦坂年輝、谷川智之
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-06-07
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] FTIR spectra in a heavily carbon doped (0001)GaN2014
- Author(s)
  K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Nature of yellow luminescence band in high quality GaN2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Epitaxial relationship and nano-structures at GaN/Si interface2013
- Author(s)
  N.Sawaki
- Organizer
  EMN2013- Open Access 2013
- Place of Presentation
  Chengdu
- Invited
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013, Feb. 4
- Place of Presentation
  San Francisco (USA).
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Coalescence and generation of stacking faults in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 半極性(1-101)GaN における積層欠陥の振る舞い2013
- Author(s)
  中北太平、伊藤翔悟、岩田博之、澤木宣彦、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Growth of high quality GaN on (111)Si using AlN:In nucleation layer2013
- Author(s)
  S.Ito, T.Nakagita, S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] nda, M.Yamaguchi, and H.Amano, "Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Ho
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Si基板上GaN/AlInNエピタキシャル膜のPLスペクトル2013
- Author(s)
  伊藤翔悟、中北太平、澤木宣彦、入江将嗣、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] A high efficiency InGaN solar cell with graded composition p-InGaN top layer2013
- Author(s)
  T.Fujisawa and N.Sawaki,
- Organizer
  ISPlasama 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE-OPTO 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on NitrideSemiconductors
- Place of Presentation
  Sapporo.
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, N.Sawaki, 他
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai, Aichi, Japan
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, 他
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  SanFrancisco, CA, USA
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012
- Author(s)
  K.Hagiwara, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 傾斜組成トップ層によるInGaN太陽電池の高効率化2012
- Author(s)
  藤澤知樹，澤木宣彦
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  豊橋市、日本
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  San Francisco (USA).
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012
- Author(s)
  K.Hagiwara, N.Sawaki, 他
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai, Aichi, Japan
- Year and Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011
- Author(s)
  N.Sawaki
- Organizer
  DPG Spring Meetings, Deutsche Physikalische Gesellschaft
- Place of Presentation
  Dresden, Germany
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2011
- Author(s)
  T.Tanikawa, N.Sawaki, 他
- Organizer
  9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Grasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba.
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, N.Sawaki, 他
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth, characterization, and crystallographic orientation of overgrown GaN layers on nanostructures by HVPE2011
- Author(s)
  M.J.Kim, M.J.Shin, N.Sawaki, 他
- Organizer
  9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Grasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011
- Author(s)
  K.Hagiwara, R.Katayama, M.Amano, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano, "High-quality GaN grown on (111)Si using an AlInN intermediate layer," Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), May 23 (2011), Toba.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR spectra and LVMs in a carbon doped (1-101)GaN grown on a (001)Si substrate by MOVPE," ISPlasma2011
- Author(s)
  K.Hagiwara, M.Amano, R.Katayama, N.Sawaki, Y.Honda, T.Hikosaka, T.Tanikawa, N.Koide, M.Yamaguchi, and H.Amano
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011
- Author(s)
  N.Sawaki
- Organizer
  DPG Spring Meetings, Deutsche Physikalische Gesellschaft
- Place of Presentation
  Dresden (Germany).
- Year and Date
  2011-05-17
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011
- Author(s)
  K.Hagiwara, N.Sawaki, 他
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Nitride LEDs on Si substrate2010
- Author(s)
  N.Sawaki
- Organizer
  ISSLED-8
- Place of Presentation
  Beijing、China
- Year and Date
  2010-05-20
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 加工シリコン基板上への窒化物半導体選択ヘテロエピタキシ2010
- Author(s)
  澤木宣彦
- Organizer
  仙台結晶成長学会バルク結晶分科会研究会
- Place of Presentation
  東北大学、仙台市
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited)2008
- Author(s)
  N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
- Organizer
  ISGN-2
- Place of Presentation
  Izu
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Compound semiconductors- The crystal growth and creation of new functions-2008
- Author(s)
  N. Sawaki
- Organizer
  27 th Electronic Materials. Symposium
- Place of Presentation
  Izu (Japan)
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Compound semiconductors- The crystal growth and creation of new functions-(Plenary)2008
- Author(s)
  N.Sawaki
- Organizer
  EMS-27
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate2008
- Author(s)
  N. Sawaki, 他
- Organizer
  2nd Intern. Symp. Growth of Nitrides
- Place of Presentation
  Izu (Japan)
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008
- Author(s)
  N.Sawaki, N.Sawaki
- Organizer
  POEM2008
- Place of Presentation
  Wuhan
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Time-resolved spectroscopy in an undoped GaN (1-101)2007
- Author(s)
  EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  HCIS-15
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 窒化物半導体材料とデバイスの将来展望(プレナリー)2007
- Author(s)
  澤木宣彦
- Organizer
  SiCおよび関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN2007
- Author(s)
  J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  ICNS-7
- Place of Presentation
  Las Vegas
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性2007
- Author(s)
  彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
- Organizer
  JSPS-162研究会
- Place of Presentation
  川口屋リバーサイドホテル
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001) GaN and (1-101) GaN2007
- Author(s)
  N. Sawaki, 他
- Organizer
  7 th Intern. Conf. on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas (USA)
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 窒化物半導体材料とデバイスの将来展望2007
- Author(s)
  澤木宣彦
- Organizer
  第17回SiCおよび関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Year and Date
  2007-11-29
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN2006
- Author(s)
  N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
- Organizer
  28th ICPS
- Place of Presentation
  Wien
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Improvement of crystalline quality of GaN on Si by an AlInN nucleation layer
- Author(s)
  T.Yagi, R.Tanabe, T.Kanematsu, H.Kobayashi, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Effect of annealing on the defect related emission in GaN grown on Si substrate
- Author(s)
  H.Kobayashi, T.Yagi, R.Tanabe, T.Kanematsu,H.Iwata, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  APWS 2015
- Place of Presentation
  The K Seoul Hotel (Seoul, Korea)
- Year and Date
  2015-05-17 – 2015-05-20
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Characteristics of high-quality AlN thick film grown on c-sapphire substrates by HVPE method
- Author(s)
  G.S.Lee, H.S.Jeon, C.M.Lee, C.B.Lee, S.N.Yi, M.Yang, H.S.Ahn, S.W.Kim, Y.M.Yu, and N.Sawaki
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] 炭素ドープ半極性(1-101)GaN の光学特性
- Author(s)
  小林宙主、澤木宣彦、山下康平、彦坂年輝、本田善央、天野浩
- Organizer
  平成26年電気電子情報関係学会東海支部連合大会
- Place of Presentation
  中京大学（名古屋市天白区）
- Year and Date
  2014-09-08 – 2014-09-09
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Optical spectra and yellow luminescence in C doped GaN
- Author(s)
  H.Kobayashi, N.Sawaki, K.Yamashitta, T.Hikosaka, Y.Honda, and H.Aman
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Resonant Raman and FTIR spectra of carbon doped GaN
- Author(s)
  S.Ito, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ICMOVPE 2014
- Place of Presentation
  EPFL(Lousanne, Swiss)
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-24656019

1. YAMAGUCHI Masahito (20273261)

# of Collaborated Projects: 8 results

# of Collaborated Products: 26 results
2. AKASAKI Isamu (20144115)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. HONDA Yoshio (60362274)

# of Collaborated Projects: 5 results

# of Collaborated Products: 62 results
4. GOTO Hideo (00195942)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
5. HASEGAWA Hideki (60001781)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. SUGANO Takuo (50010707)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. TANAKA Shigeyasu (70217032)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
8. 平松和政 (50165205)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 安亨洙 (40303672)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. IWATA Hiroyuki (20261034)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
11. KOMA Atsushi (00010950)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. IWAMI Motohiro (80029123)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. YASUDA Yukio (60126951)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. MIZUTANI Takashi (70273290)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
15. KISHIMOTO shigeru (10186215)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
16. OHNO Yutaka (10324451)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. 川辺光央 (80029446)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 榊裕之 (90013226)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 川村清 (00011619)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 天野浩 (60202694)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SUZUKI Takamasa

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 橋本雅文

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAWAKI Nobuhiko 澤木 宣彦

澤木 宣彦 サワキ ノブヒコ

沢木 宣彦 サワキ ノブヒコ

澤木 宜彦 サワキ ノブヒコ

Research Projects

Research Products

Co-Researchers

A high efficiency III nitride solar cell with graded composition top layerPrincipal Investigator

Principal Investigator

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Research Institution

Growth of high quality GaN on an Si substratePrincipal Investigator

Principal Investigator

Project Period (FY)

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加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substratePrincipal Investigator

Principal Investigator

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Research Institution

Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs

Principal Investigator

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結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATEPrincipal Investigator

Principal Investigator

Project Period (FY)

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半導体結合量子ドット構造による疑似神経回路網の作製Principal Investigator

Principal Investigator

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Research Institution

Selective Growth of GaN pyramids and study of their optical and electronic propertiesPrincipal Investigator

Principal Investigator

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Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wellsPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

二重量子井戸構造における電子波干渉効果Principal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

"Control of surface and interfaces of nano-structures for single electron devices"

Principal Investigator

SAWAKI Nobuhiko 澤木宣彦

澤木宣彦サワキノブヒコ

沢木宣彦サワキノブヒコ

澤木宜彦サワキノブヒコ