YASUDA Yukio 安田幸夫

… Alternative Names

YASUDA yukio 安田幸夫

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Researcher Number	60126951
Other IDs
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Affiliation (based on the past Project Information) *help	2004: Kochi University of Technology, KUT Research Institute, Professor, 総合研究所, 教授 2000 – 2003: 名古屋大学, 大学院・工学研究科, 教授 1996 – 2002: 名古屋大学, 工学研究科, 教授 1999 – 2000: 名古屋大学, 大学院・工学系研究科, 教授 1997 – 1998: 名古屋大学, 大学院・工学研究科, 教授 … More 1988 – 1998: 名古屋大学, 工学部, 教授 1986: 名古屋大学, 工学部, 教授 1985: 豊橋技術科学大学, 工, 教授 Less
Review Section/Research Field	Principal Investigator 表面界面物性 / Applied materials / Applied materials science/Crystal engineering / 電子材料工学 / 固体物性 / Science and Engineering Except Principal Investigator 表面界面物性 / Applied materials science/Crystal engineering / Applied materials / Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 高分解能電子エネルギー損失分光法 / 表面反応 / 表面偏析 / MOSFET / 超低抵抗コンタクト / ULSI / SiGe / RHEED / HREELS / Ge … More / SiGe混晶膜 / 薄膜成長 / ボロン / シリサイド / シリコンゲルマニウム / 未結合手 / 水素終端シリコン表面 / 高分解能電子エネルギー損失分光 / 界面固相反応 / コンタクト抵抗率 / 精密制御技術 / 界面反応 / 接触抵抗 / 金属ー半導体界面 / Silicon / Initial Stage / {811} facet / Germanium / Gas source molecular beam epitaxy / Hreteroepitaxy / In-situ observation / ファセット構造 / 成長初期段階 / 気相成長 / 反射電子回拆法 / {811}面 / 回相界面反応 / 秩序構造 / 固相界面反応 / ガスソ-ス分子線エピタキシャル法 / 反射電子回折法 / その場観察 / 成長初期過程 / シリコン / ゲルマニウム / Thin Film Growth Method / Functional Thin Film / 薄膜形成技術 / 機能性薄膜 / drain leakage current / mobility / ion implantation / fluorine ion( <F^+> ) / silicon on sapphire / SOS / VLSI / ドレイン漏れ電流 / 移動度 / イオン注入 / 弗素イオン / SOS膜 / Drain / Source / Germanosilicide / Silicide / Titanium / Rapid thermal annealing / Silicon germanium / modulated interface / Ultra low resistance contact / 急速加熱化学気相成長法 / 超抵抗コンタクト / ニッケル / ドレイン / ソース / ジャーマノシリサイド / チタン / 急速加熱処理 / 界面組成変調層 / Schottky barrier / Si interface / Metal / Contact / 水素終端効果 / 自然酸化膜の抑制 / 水素同時添加効果 / Si(100)成長 / Si構造 / ショットキ障壁高さ / ショットキコンタクト特性 / Coシリサイド / Si界面 / ショットキー障壁 / Si 界面 / 金属 / コンタクト / SiGe epitaxial films / MBE / local bonding structure / initial oxidation process / H-terminated Si surface / CVD / 反射高速電子線回折 / Si_<1-x>Ge_xエピタキシャル成長 / ガスソース分子線エピタキシ- / 表面反応メカニズム / 表面吸着水素 / 中心力ネットワークモデル / 一次元連鎖モデル / シリコン酸化過程 / 分子線エピタキシー / 局所構造 / 初期酸化過程 / 水素終端シリコン / 反射高速電子線回折法 / 化学気相成長 / Two-step growth method / Strain-relaxed Si_<1-x>Ge_x layrs / Band splittings / Impurity doping / Growth of Si_<1-x>Ge_x layrs / 磁気抵抗効果 / 不純物濃度制御 / 歪量子井戸構造 / 東縛励起子発光 / 不純物ドープ / 低温成長 / SiGe薄膜 / 二段階成長法 / 無歪基板形成技術 / バンドスプリット / 不純物ド-ピング技術 / SiGe膜成長 / surface segregation / surface migration / Si epitaxy / hydrogen / high-resolution electron energy loss spectroscopy / 表面反応過程 / ダイハイドライド構造 / 初期酸化 / 表面拡散 / エピタキシャル成長 / 水素 / SiGe thin film / Anderson localization / negative magnetoresistance / 1D-VRH / p-Si wire / 磁気抵抗 / 1次元ホッピング伝導 / 不純物伝導 / 擬1次元キャリア / アンダーソン局在 / 負の磁気抵抗 / 一次元可変領域ホッピング伝導 / p型Si細線 / Thin film growth / Time-dependent measurement / Reaction process / Surface reaction / Vibration-excited spectroscopy / 界面モ-ド / 格子振動 / 時間分解 / 反応素過程 / 振動励起分光 / ハイドープ / 低温エピタキシャル成長 / イオンビームスパッタ法 / 水素サーファクタント成長 / 固相エピタキシャル成長 / 透過電子顕微鏡 / イオンビームスパッタ / 歪成長 / 転位 / スパッタ粒子のエネルギーの低減 / スパッタ法のMCシミュレーション / 界面層 / 格子欠陥 / 歪緩和バッファ層 / シリコンゲルマニウムカーボン / Bの高濃度ドープ / 走査トンネル顕微鏡 / 2次元逆格子マッピングX線回折法 / B高濃度ドーピング / 熱電効果 / バッファ層 / 歪緩和 / シリコンゲルマニウムカーボンバッファ層 / 自然酸化 / ラジカル / 気相-固相反応 / 水素終端面 / 水素ラジカル / 超高濃度ド-ピング / ミリサイド / 界面電気伝導 / 界面精密制御 / 不純物ド-ピング / 金属一半導体界面 / 不純物ドーピング … More Except Principal Investigator 走査型トンネル顕微鏡 / マイクロエレクトロニクス / 界面反応 / 金属ー半導体界面 / 透過電子顕微鏡 / Si / 積層界面 / FIB / TEM / CoSi_2 / STM / 強誘電体 / SiGe / epitaxial growth / エピタキシャル成長 / シリコン / ナノ構造 / 集積回路 / 単電子デバイス / 赤外ダイオ-ドレ-ザ-分光法 / レ-ザ-誘起蛍光法 / 光励起プロセス / ヘテロ界面 / Dielectric breakdown / Stress induced leakage current / Gate SiO_2 Films / Metal-oxide-Semiconductor(MOS) / Conductive atomic force microscopy / Scanning tunneling spectroscopy(STS) / Scanning tunneling microscopy(STM) / 電気伝導特性 / HfO_2 / 走査プローブ顕微鏡 / ストレス誘起リーク電流 / 高誘電率材料 / 金属酸化膜 / ゲート絶縁膜 / ストレス誘起欠陥 / 電流スポット / La_2O_3-Al_2O_3複合膜 / 高誘電率ゲート絶縁膜 / ゲートSiO_2膜 / MOSキャパシタ / 絶縁破壊 / Metal-oxide-Semiconductor / 電荷トラップ / 極薄シリコン酸化膜 / 電流検出型原子間力顕微鏡 / 走査トンネル分光 / sample holder / degradation / electric field stress / PZT / ferroelectric film / in situ obervation / 電極 / 電圧ストレス / 試料ホルダー / 劣化 / 電界ストレス / PZT薄膜 / その場観察 / twin structure / multiple nucleation and layer growth / two-step growth / salicide technique / SK成長 / 界面反応過程 / 多層多核成長 / サーファクタント効果 / 反応バリア / 反応機構 / 双晶 / 多核多層成長 / 二段階成長法 / 走査トンネル顕微鏡 / サリサイド技術 / in-situ real-time observation / STS / HREELS / impurity / Hydrogen atom / Structural relaxation / initial oxidation process of Si / SiOィイD22ィエD2 interface / 高分解能エネルギー損失分充法 / リアルタイム観察 / 分光法 / 高分解能電子エネルギー損失分光法 / 不純物 / 表面吸着水素 / 構造緩和過程 / シリコン初期酸化過程 / SiO_2界面 / high-density intgration / atomic-scale control / quantum devices / quantum dot / tunnel barrier / surfaces and interfaces / nanostructure / Single electron devices / 高密度集積化 / 原子スケール制御 / 量子デバイス / 量子ドット / トンネル障壁 / 表面・界面 / ferroelectric / field effect transistor / quantum chemistry calculation / low contact resistance / high aspect ratio / point defect relaxation process / ultra thin Si oxide / 無損傷化 / 欠陥緩和 / 欠損測定 / Siプロセス量子化学研究 / 高アスペクト比プロセス / 低抵抗コンタクト / 極薄酸化膜 / Ge歪超格子 / Si高精度化プロセス / 電界効果型トランジスタ / 量子化学計算 / 低抵抗コンタクト抵抗 / 高アスペクト比 / 点欠陥緩和過程 / 極薄Si酸化膜 / dynamic process RHEED oscillation / surface reaction / surface migration / 時間分解測定 / 表面反応 / RHEED振動 / 動的素過程 / 表面泳動 / 半導体 / 半導体界面 / 積層構造 / 超高速光・電子デバイス / 原子精度要素プロセス / 高性能トランジスタ / 極微細構造 / シリコンゲルマニウム / 光物性 / 電子物性 / 光エレクトロニクス / 人工IV族半導体 / 水素終端表面 / エピタキシ- / 水素生態 / 水素変性 / 水素媒介新物質 / トンネル現象 / 量子現象 / クーロンブロッケード / 単電子トランジスタ / 金属-半導体界面 / 基板面方位 / バッファ層 / 格子不整合 / 成長機構 / エピタキシー / 結晶成長 / 原子レベル / エピタキシー機構 / 臨界膜厚 / 原子拡散過程 / 期板傾斜角 / 基板面配向 / 格子不整合度 / 初期成長過程 / 吸着 / 赤外ダイオードレーザー分光 / レーザー誘起蛍光法 / 高速反射電子回析 / 偏光変調高感度反射赤外分光 / 角度分解型X線電子分光 / 光勃起プロセス / 光誘起表面泳動 / 反射高速電子線回折 / X線電子分光法 / アルミ薄膜 / 超LSI / 光解離分光法 / 光電子分光法 / 光イオン化質量分析法 / 反射電子回析法 / ショットキ-障壁 / 界面固相反応 / ショットキー障壁 Less

Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric filmsPrincipal Investigator
- Principal Investigator
  
  KONDO Hiroki, 安田幸夫
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSIPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
人工IV族半導体の物性制御と超高速光・電子デバイスへの応用
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
  The University of Tokyo
人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Study on the formation of CoSi_2/Si(100) heterostructures by reactive epitaxial growth
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of atomically-controlled oxidation techniques for ultra-thin gate oxide films
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
水素媒介新物質の物理と化学
- Principal Investigator
  
  尾浦憲治郎
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Osaka University
"Control of surface and interfaces of nano-structures for single electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  HOKKAIDO UNIVERSITY
Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELSPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
Development of Low-Resistivity Contact Materials for Future ULSIsPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
Ultimate Materials and Processes for Integrated Intelligent System
- Principal Investigator
  
  HORIIKE Yasuhiro
- Project Period (FY)
  1995 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
  Toyo University
電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
単電子エレクロニクスの基礎
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopyPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  NAGOYA UNIVERSITY
STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURESPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
エピタキシー機構の研究
- Principal Investigator
  
  佐々木昭夫
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
反応の計測,診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
金属-半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
Development of a time-resolved measurement method for detecting surface dynamic processes of epitaxial growth and studies on surface migration of reaction species.
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse LasersPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  固体物性
- Research Institution
  Nagoya University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究(総括班)
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
反応の計測、診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
反応の計測,診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.Principal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究(総括班)
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Institution
  Osaka University
Development and Application of Growth Methods of Functional Thin Films.Principal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Co-operative Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial ReactionsPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
積層構造(金属-半導体,絶縁体-半導体)の総合的研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1986
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Osaka University
Development of Ultra-Thin SOS Films and its Application to Submicron VLSIs.Principal Investigator
- Principal Investigator
  
  YASUDA yukio
- Project Period (FY)
  1984 – 1985
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology

All 2004 2003 2002 2001

All Journal Article

[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(2A)
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects In Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(4B)
  
  Pages: 1843-1847
- NAID
  10012948668
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leadage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- NAID
  10013431909
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.4B
  
  Pages: 1843-1847
- NAID
  10012948668
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] 電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2004
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  信学論 J87-C (8)
  
  Pages: 616-624
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4679-4682
- NAID
  10013431900
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  Akiyoshi Seko, Yukihiko Watanabe, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4683-4686
- NAID
  10013431909
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2003
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  Technical report of IEICE(信学技報) 103
  
  Pages: 1-6
- NAID
  110003202684
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy2003
- Author(s)
  H.Ikeda, T.Goto, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 42(4B)
  
  Pages: 1949-1953
- NAID
  10010800794
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Structural and electrical characteristics of HfO_2 films fabricated by pulsed laser deposition2002
- Author(s)
  H.Ikeda, S.Goto, K.Honda, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2476-2479
- NAID
  110003310815
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen.2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- NAID
  10015752767
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of deffect traps in SiO_2 thin films2001
- Author(s)
  J.-Y.Rosaye, P.Mialhe, J.-P.Charles, M.Sakashita, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Active and Passive Elec.Comp. 24
  
  Pages: 169-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local electrical characteristics of ultra-thin SiO_2 films formed on Si(100) surfaces2001
- Author(s)
  H.Ikeda, N.Kurumado, K.Ohmori, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Surface Science 493
  
  Pages: 653-658
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO_2 Films2001
- Author(s)
  K.Ohmori, T.Goto, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 40(4)
  
  Pages: 2823-2826
- NAID
  10017197998
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 15 results

# of Collaborated Products: 22 results
2. IKEDA Hiroya (00262882)

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# of Collaborated Products: 11 results
3. IWANO Hirotaka (50252268)

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5. SHIRAKI Yasuhiro (00206286)

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7. KOIDE Yasuo (70195650)

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9. HORIIKE Yasuhiro (20209274)

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10. SAKAI Akira (20314031)

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11. HASEGAWA Hideki (60001781)

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24. KONDO Hiroki (50345930)

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32. SAWAKI Nobuhiko (70023330)

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YASUDA Yukio 安田 幸夫

YASUDA yukio 安田 幸夫

Research Projects

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Co-Researchers

Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric filmsPrincipal Investigator

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Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSIPrincipal Investigator

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人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発Principal Investigator

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Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELSPrincipal Investigator

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Development of Low-Resistivity Contact Materials for Future ULSIsPrincipal Investigator

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電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator

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A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopyPrincipal Investigator

Principal Investigator

YASUDA Yukio 安田幸夫

YASUDA yukio 安田幸夫