YASUDA Yukio 安田幸夫

… Alternative Names

YASUDA yukio 安田幸夫

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Researcher Number	60126951
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2004: Kochi University of Technology, KUT Research Institute, Professor, 総合研究所, 教授 2000 – 2003: 名古屋大学, 大学院・工学研究科, 教授 1996 – 2002: 名古屋大学, 工学研究科, 教授 1999 – 2000: 名古屋大学, 大学院・工学系研究科, 教授 1997 – 1998: 名古屋大学, 大学院・工学研究科, 教授 … More 1988 – 1998: 名古屋大学, 工学部, 教授 1986: 名古屋大学, 工学部, 教授 1985: 豊橋技術科学大学, 工, 教授 Less
Review Section/Research Field	Principal Investigator Applied materials / 表面界面物性 / Applied materials science/Crystal engineering / Science and Engineering / 固体物性 / 電子材料工学 Except Principal Investigator 表面界面物性 / Applied materials / Applied materials science/Crystal engineering / Science and Engineering / Electronic materials/Electric materials
Keywords	Principal Investigator 表面偏析 / 表面反応 / 高分解能電子エネルギー損失分光法 / 金属ー半導体界面 / 接触抵抗 / 界面反応 / 精密制御技術 / コンタクト抵抗率 / 界面固相反応 / 高分解能電子エネルギー損失分光 … More / 水素終端シリコン表面 / 未結合手 / シリコンゲルマニウム / シリサイド / ボロン / 薄膜成長 / SiGe混晶膜 / Ge / HREELS / RHEED / SiGe / ULSI / 超低抵抗コンタクト / MOSFET / 不純物ドーピング / 金属一半導体界面 / 不純物ド-ピング / 界面精密制御 / 界面電気伝導 / ミリサイド / 超高濃度ド-ピング / 水素ラジカル / 水素終端面 / 気相-固相反応 / ラジカル / 自然酸化 / シリコンゲルマニウムカーボンバッファ層 / 歪緩和 / バッファ層 / 熱電効果 / B高濃度ドーピング / 2次元逆格子マッピングX線回折法 / 走査トンネル顕微鏡 / Bの高濃度ドープ / シリコンゲルマニウムカーボン / 歪緩和バッファ層 / 格子欠陥 / 界面層 / スパッタ法のMCシミュレーション / スパッタ粒子のエネルギーの低減 / 転位 / 歪成長 / イオンビームスパッタ / 透過電子顕微鏡 / 固相エピタキシャル成長 / 水素サーファクタント成長 / イオンビームスパッタ法 / 低温エピタキシャル成長 / ハイドープ / 振動励起分光 / 反応素過程 / 時間分解 / 格子振動 / 界面モ-ド / Vibration-excited spectroscopy / Surface reaction / Reaction process / Time-dependent measurement / Thin film growth / p型Si細線 / 一次元可変領域ホッピング伝導 / 負の磁気抵抗 / アンダーソン局在 / 擬1次元キャリア / 不純物伝導 / 1次元ホッピング伝導 / 磁気抵抗 / p-Si wire / 1D-VRH / negative magnetoresistance / Anderson localization / SiGe thin film / 水素 / エピタキシャル成長 / 表面拡散 / 初期酸化 / ダイハイドライド構造 / 表面反応過程 / high-resolution electron energy loss spectroscopy / hydrogen / Si epitaxy / surface migration / surface segregation / SiGe膜成長 / 不純物ド-ピング技術 / バンドスプリット / 無歪基板形成技術 / 二段階成長法 / SiGe薄膜 / 低温成長 / 不純物ドープ / 東縛励起子発光 / 歪量子井戸構造 / 不純物濃度制御 / 磁気抵抗効果 / Growth of Si_<1-x>Ge_x layrs / Impurity doping / Band splittings / Strain-relaxed Si_<1-x>Ge_x layrs / Two-step growth method / 化学気相成長 / 反射高速電子線回折法 / 水素終端シリコン / 初期酸化過程 / 局所構造 / 分子線エピタキシー / シリコン酸化過程 / 一次元連鎖モデル / 中心力ネットワークモデル / 表面吸着水素 / 表面反応メカニズム / ガスソース分子線エピタキシ- / Si_<1-x>Ge_xエピタキシャル成長 / 反射高速電子線回折 / CVD / H-terminated Si surface / initial oxidation process / local bonding structure / MBE / SiGe epitaxial films / コンタクト / 金属 / Si 界面 / ショットキー障壁 / Si界面 / Coシリサイド / ショットキコンタクト特性 / ショットキ障壁高さ / Si構造 / Si(100)成長 / 水素同時添加効果 / 自然酸化膜の抑制 / 水素終端効果 / Contact / Metal / Si interface / Schottky barrier / 界面組成変調層 / 急速加熱処理 / チタン / ジャーマノシリサイド / ソース / ドレイン / ニッケル / 超抵抗コンタクト / 急速加熱化学気相成長法 / Ultra low resistance contact / modulated interface / Silicon germanium / Rapid thermal annealing / Titanium / Silicide / Germanosilicide / Source / Drain / SOS膜 / 弗素イオン / イオン注入 / 移動度 / ドレイン漏れ電流 / VLSI / SOS / silicon on sapphire / fluorine ion( <F^+> ) / ion implantation / mobility / drain leakage current / 機能性薄膜 / 薄膜形成技術 / Functional Thin Film / Thin Film Growth Method / ゲルマニウム / シリコン / 成長初期過程 / その場観察 / 反射電子回折法 / ガスソ-ス分子線エピタキシャル法 / 固相界面反応 / 秩序構造 / 回相界面反応 / {811}面 / 反射電子回拆法 / 気相成長 / 成長初期段階 / ファセット構造 / In-situ observation / Hreteroepitaxy / Gas source molecular beam epitaxy / Germanium / {811} facet / Initial Stage / Silicon … More Except Principal Investigator 走査型トンネル顕微鏡 / 金属ー半導体界面 / 界面反応 / マイクロエレクトロニクス / 積層界面 / Si / 透過電子顕微鏡 / ヘテロ界面 / 光励起プロセス / レ-ザ-誘起蛍光法 / 赤外ダイオ-ドレ-ザ-分光法 / 単電子デバイス / 集積回路 / ナノ構造 / シリコン / エピタキシャル成長 / epitaxial growth / SiGe / 強誘電体 / STM / CoSi_2 / TEM / FIB / ショットキー障壁 / 界面固相反応 / ショットキ-障壁 / 反射電子回析法 / 光イオン化質量分析法 / 光電子分光法 / 光解離分光法 / 超LSI / アルミ薄膜 / X線電子分光法 / 反射高速電子線回折 / 光誘起表面泳動 / 光勃起プロセス / 角度分解型X線電子分光 / 偏光変調高感度反射赤外分光 / 高速反射電子回析 / レーザー誘起蛍光法 / 赤外ダイオードレーザー分光 / 吸着 / 初期成長過程 / 格子不整合度 / 基板面配向 / 期板傾斜角 / 原子拡散過程 / 臨界膜厚 / エピタキシー機構 / 原子レベル / 結晶成長 / エピタキシー / 成長機構 / 格子不整合 / バッファ層 / 基板面方位 / 金属-半導体界面 / 単電子トランジスタ / クーロンブロッケード / 量子現象 / トンネル現象 / 水素媒介新物質 / 水素変性 / 水素生態 / エピタキシ- / 水素終端表面 / 人工IV族半導体 / 光エレクトロニクス / 電子物性 / 光物性 / シリコンゲルマニウム / 極微細構造 / 高性能トランジスタ / 原子精度要素プロセス / 超高速光・電子デバイス / 積層構造 / 半導体界面 / 半導体 / 表面泳動 / 動的素過程 / RHEED振動 / 表面反応 / 時間分解測定 / surface migration / surface reaction / dynamic process RHEED oscillation / 極薄Si酸化膜 / 点欠陥緩和過程 / 高アスペクト比 / 低抵抗コンタクト抵抗 / 量子化学計算 / 電界効果型トランジスタ / Si高精度化プロセス / Ge歪超格子 / 極薄酸化膜 / 低抵抗コンタクト / 高アスペクト比プロセス / Siプロセス量子化学研究 / 欠損測定 / 欠陥緩和 / 無損傷化 / ultra thin Si oxide / point defect relaxation process / high aspect ratio / low contact resistance / quantum chemistry calculation / field effect transistor / ferroelectric / 表面・界面 / トンネル障壁 / 量子ドット / 量子デバイス / 原子スケール制御 / 高密度集積化 / Single electron devices / nanostructure / surfaces and interfaces / tunnel barrier / quantum dot / quantum devices / atomic-scale control / high-density intgration / SiO_2界面 / シリコン初期酸化過程 / 構造緩和過程 / 表面吸着水素 / 不純物 / 高分解能電子エネルギー損失分光法 / 分光法 / リアルタイム観察 / 高分解能エネルギー損失分充法 / SiOィイD22ィエD2 interface / initial oxidation process of Si / Structural relaxation / Hydrogen atom / impurity / HREELS / STS / in-situ real-time observation / サリサイド技術 / 走査トンネル顕微鏡 / 二段階成長法 / 多核多層成長 / 双晶 / 反応機構 / 反応バリア / サーファクタント効果 / 多層多核成長 / 界面反応過程 / SK成長 / salicide technique / two-step growth / multiple nucleation and layer growth / twin structure / その場観察 / PZT薄膜 / 電界ストレス / 劣化 / 試料ホルダー / 電圧ストレス / 電極 / in situ obervation / ferroelectric film / PZT / electric field stress / degradation / sample holder / 走査トンネル分光 / 電流検出型原子間力顕微鏡 / 極薄シリコン酸化膜 / 電荷トラップ / Metal-oxide-Semiconductor / 絶縁破壊 / MOSキャパシタ / ゲートSiO_2膜 / 高誘電率ゲート絶縁膜 / La_2O_3-Al_2O_3複合膜 / 電流スポット / ストレス誘起欠陥 / ゲート絶縁膜 / 金属酸化膜 / 高誘電率材料 / ストレス誘起リーク電流 / 走査プローブ顕微鏡 / HfO_2 / 電気伝導特性 / Scanning tunneling microscopy(STM) / Scanning tunneling spectroscopy(STS) / Conductive atomic force microscopy / Metal-oxide-Semiconductor(MOS) / Gate SiO_2 Films / Stress induced leakage current / Dielectric breakdown Less

Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric filmsPrincipal Investigator
- Principal Investigator
  
  KONDO Hiroki, 安田幸夫
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSIPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
人工IV族半導体の物性制御と超高速光・電子デバイスへの応用
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
  The University of Tokyo
人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Study on the formation of CoSi_2/Si(100) heterostructures by reactive epitaxial growth
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of atomically-controlled oxidation techniques for ultra-thin gate oxide films
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
水素媒介新物質の物理と化学
- Principal Investigator
  
  尾浦憲治郎
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Osaka University
"Control of surface and interfaces of nano-structures for single electron devices"
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  HOKKAIDO UNIVERSITY
Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELSPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
Development of Low-Resistivity Contact Materials for Future ULSIsPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  表面界面物性
- Research Institution
  Nagoya University
Ultimate Materials and Processes for Integrated Intelligent System
- Principal Investigator
  
  HORIIKE Yasuhiro
- Project Period (FY)
  1995 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
  Toyo University
電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
単電子エレクロニクスの基礎
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Hokkaido University
A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopyPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  NAGOYA UNIVERSITY
STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURESPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
エピタキシー機構の研究
- Principal Investigator
  
  佐々木昭夫
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
反応の計測,診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
金属-半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
Development of a time-resolved measurement method for detecting surface dynamic processes of epitaxial growth and studies on surface migration of reaction species.
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse LasersPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  固体物性
- Research Institution
  Nagoya University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究(総括班)
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
反応の計測、診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
反応の計測,診断
- Principal Investigator
  
  英貢
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.Principal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
界面の作製とその精密制御Principal Investigator
- Principal Investigator
  
  安田幸夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究(総括班)
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka University
金属ー半導体界面:マイクロエレクトロニクス発展への基礎研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Institution
  Osaka University
Development and Application of Growth Methods of Functional Thin Films.Principal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Co-operative Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial ReactionsPrincipal Investigator
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
積層構造(金属-半導体,絶縁体-半導体)の総合的研究
- Principal Investigator
  
  平木昭夫
- Project Period (FY)
  1986
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Osaka University
Development of Ultra-Thin SOS Films and its Application to Submicron VLSIs.Principal Investigator
- Principal Investigator
  
  YASUDA yukio
- Project Period (FY)
  1984 – 1985
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology

All 2004 2003 2002 2001

All Journal Article

[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(2A)
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects In Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(4B)
  
  Pages: 1843-1847
- NAID
  10012948668
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leadage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  A.Seko, Y.Watanabe, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4683-4686
- NAID
  10013431909
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Y.Watanabe, A.Seko, H.Kondo, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 43(7B)
  
  Pages: 4679-4682
- NAID
  10013431900
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.4B
  
  Pages: 1843-1847
- NAID
  10012948668
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] 電流注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2004
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  信学論 J87-C (8)
  
  Pages: 616-624
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy2004
- Author(s)
  Yukihiko Watanabe, Akiyoshi Seko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4679-4682
- NAID
  10013431900
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy2004
- Author(s)
  Akiyoshi Seko, Yukihiko Watanabe, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda
- Journal Title
  
  Japanese Journal Applied Physics Vol.43, No.7B
  
  Pages: 4683-4686
- NAID
  10013431909
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析2003
- Author(s)
  世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
  
  Technical report of IEICE(信学技報) 103
  
  Pages: 1-6
- NAID
  110003202684
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy2003
- Author(s)
  H.Ikeda, T.Goto, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 42(4B)
  
  Pages: 1949-1953
- NAID
  10010800794
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Structural and electrical characteristics of HfO_2 films fabricated by pulsed laser deposition2002
- Author(s)
  H.Ikeda, S.Goto, K.Honda, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2476-2479
- NAID
  110003310815
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy2002
- Author(s)
  J.-Y.Rosaye, N.Kurumado, M.Sakashita, H.Ikeda, A.Sakai, P.Mialhe, J.-P.Charles, S.Zaima, Y.Yasuda, Y.Watanabe
- Journal Title
  
  Microelectronics Journal 33(5-6)
  
  Pages: 429-436
- NAID
  10012038848
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen.2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- NAID
  10015752767
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of defect traps in SiO_2 thin films influence of temperature on defects2002
- Author(s)
  H.Ikeda, D.Matsushita, S.Naito, K.Ohmori, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 41(4B)
  
  Pages: 2463-2467
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Characterization of deffect traps in SiO_2 thin films2001
- Author(s)
  J.-Y.Rosaye, P.Mialhe, J.-P.Charles, M.Sakashita, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Active and Passive Elec.Comp. 24
  
  Pages: 169-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Local electrical characteristics of ultra-thin SiO_2 films formed on Si(100) surfaces2001
- Author(s)
  H.Ikeda, N.Kurumado, K.Ohmori, M.Sakashita, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Surface Science 493
  
  Pages: 653-658
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Microscopic Observation of X-ray Irradiation Damages in Ultra-Thin SiO_2 Films2001
- Author(s)
  K.Ohmori, T.Goto, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Japanese Journal of Applied Physics 40(4)
  
  Pages: 2823-2826
- NAID
  10017197998
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005
[Journal Article] Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy2001
- Author(s)
  K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Proc.of the 25th International conference on the Physics of Semiconductors
  
  Pages: 329-330
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13305005

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 15 results

# of Collaborated Products: 22 results
2. IKEDA Hiroya (00262882)

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# of Collaborated Products: 11 results
3. IWANO Hirotaka (50252268)

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5. SHIRAKI Yasuhiro (00206286)

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7. KOIDE Yasuo (70195650)

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9. HORIIKE Yasuhiro (20209274)

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10. SAKAI Akira (20314031)

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11. HASEGAWA Hideki (60001781)

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24. KONDO Hiroki (50345930)

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32. SAWAKI Nobuhiko (70023330)

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YASUDA Yukio 安田 幸夫

YASUDA yukio 安田 幸夫

Research Projects

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Co-Researchers

Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric filmsPrincipal Investigator

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Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSIPrincipal Investigator

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人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発Principal Investigator

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Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELSPrincipal Investigator

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Development of Low-Resistivity Contact Materials for Future ULSIsPrincipal Investigator

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電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究Principal Investigator

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A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopyPrincipal Investigator

Principal Investigator

YASUDA Yukio 安田幸夫

YASUDA yukio 安田幸夫