ARAI Eisuke 荒井英輔

Researcher Number	90283473
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2004: Nagoya Institute of Technology, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 2003 – 2004: 名古屋工業大学, 工学研究科, 教授 1998 – 2004: 名古屋工業大学, 工学部, 教授 2002: 名古屋工業大学, 工学部・電気情報工学科, 教授 1999 – 2000: 名古屋工業大学, 工学部・電気情報工学科, 教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 Except Principal Investigator Science and Engineering
Keywords	Principal Investigator シリコンLSI / 極薄SOI / 埋込み酸化膜 / 不純物拡散 / プロセスシミュレータ / SOI / 埋込酸化膜 / buried oxide / new donor / 活性層 … More Except Principal Investigator 不純物拡散 / SOI / 拡がり抵抗測定 / プロセスシミュレーション / 人工IV族半導体 / 光エレクトロニクス / 電子物性 / 光物性 / シリコンゲルマニウム / 極微細構造 / シリコン / 集積回路 / 高性能トランジスタ / 原子精度要素プロセス / 超高速光・電子デバイス Less

Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIsPrincipal Investigator
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology
人工IV族半導体の物性制御と超高速光・電子デバイスへの応用
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
  The University of Tokyo
ナノメータLSI用離散的拡散シミュレーション技術の研究
- Principal Investigator
  
  ICHIMURA Masaya
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya Institute of Technology
Modeling of Impurity Diffusion in SOI Substrates for Future LSIsPrincipal Investigator
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology

All 2004 2003 2002

All Journal Article

[Journal Article] Conduction type change with annealing in thin silicon-on-insulator wafers2004
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Solid-State Electronics 48
  
  Pages: 1249-1252
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- NAID
  80015914766
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Sb Pile-up at Oxide and Si Interface during Drive-in Process after Predeposition Using Doped Oxide Source2003
- Author(s)
  T.Ichino, H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1139-1144
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusin Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulaor2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field2003
- Author(s)
  T.Kuwayama, M.Ichimura, E.Arai
- Journal Title
  
  Appl.Phys.Letters 83
  
  Pages: 928-930
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb Diffusion in Thin Silicon-on-Insulator Wafers2003
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 4282-4283
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method2002
- Author(s)
  M.Ichimura, S.Ito, E.Arai
- Journal Title
  
  Solid-State Electronics 46
  
  Pages: 545-553
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulator2002
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structvires and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- NAID
  110006341535
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb diffusion profiles in thin silicon-on-insulator2002
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Extended Abstracts of the 3^<rd> International Workshop on Junction Technology
  
  Pages: 89-90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb diffusion profiles in thin silicon-on-insulator wafers2002
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Extended Abstracts of the 3^<rd> International Workshop on Junction Technology
  
  Pages: 89-90
- NAID
  130004531037
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323

1. ICHIMURA Masaya (30203110)

# of Collaborated Projects: 3 results

# of Collaborated Products: 12 results
2. UCHIDA Hideo (10293739)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
3. SHAO Chunlin (20242828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YOSHIDA Masayuki (80038984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. KATO Masashi (80362317)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 白木靖寛 (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 安田幸夫 (60126951)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 室田淳一 (70182144)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 坂本統徳

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 伊澤達夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ARAI Eisuke 荒井 英輔

Research Projects

Research Products

Co-Researchers

Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

人工IV族半導体の物性制御と超高速光・電子デバイスへの応用

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ナノメータLSI用離散的拡散シミュレーション技術の研究

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Modeling of Impurity Diffusion in SOI Substrates for Future LSIsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Conduction type change with annealing in thin silicon-on-insulator wafers2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator2003

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Sb Pile-up at Oxide and Si Interface during Drive-in Process after Predeposition Using Doped Oxide Source2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusin Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulaor2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] As and Sb Diffusion in Thin Silicon-on-Insulator Wafers2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulator2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structvires and Their Relation to Crystalline Quality2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality2002

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] As and Sb diffusion profiles in thin silicon-on-insulator2002

Author(s)

ARAI Eisuke 荒井英輔