Tokumitsu Eisuke 徳光永輔

… Alternative Names

TOKUMITSU Eisuke 徳光永輔

徳光英輔トクミツエイスケ

徳光永輔

Less

Researcher Number	10197882
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2020 – 2023: 北陸先端科学技術大学院大学, 先端科学技術研究科, 教授 2011 – 2015: 北陸先端科学技術大学院大学, グリーンデバイス研究センター, 教授 2009 – 2010: Tokyo Institute of Technology, 精密工学研究所, 准教授 2004 – 2006: 東京工業大学, 精密工学研究所, 助教授 2002 – 2003: Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 1993 – 2001: 東京工業大学, 精密工学研究所, 助教授 1987: 東京工業大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields Except Principal Investigator Basic Section 60040:Computer system-related / 電子デバイス・機器工学 / Applied materials science/Crystal engineering / 電子機器工学 / Electronic materials/Electric materials
Keywords	Principal Investigator 強誘電体 / 不揮発性メモリ / MOSFET / 高誘電率材料 / 強誘電体ゲートトランジスタ / ゾルゲル法 / gate insulator / La_2O_3 / HfO_2 / ゲート絶縁膜 … More / metalorganic chemical vapor deposition (MOCVD) / SrBi_2Ta_2O_9 / BaMgF_4 / GaAs / チタン酸ランタンビスマス / 酸化物半導体 / 薄膜トランジスタ / 電子デバイス・機器 / 電子・電気材料 / チタン酸ランタンビスマス(BLT) / 電界効果型トランジスタ(FET) / チタンジルコン酸鉛(PZT) / 導電性酸化物 / 機能性デバイス / 強誘電体メモリ / 急峻スイッチトランジスタ / 負性容量 / 急峻スロープトランジスタ / 分極ダイナミクス / (Bi,La)_4Ti_3O_<12> / on-current / conductive oxide / field-effect transistor (FET) / ferroelectric material / チタンジルコン酸鉛 / オン電流 / 酸化物導電体 / 電界効果型トランジスタ / molecular beam deposition (MBD) / high-dielectric-constant (high-K) material / SrZrO_3 / ZrO_2 / ランタニア / ハフニア / 分子線蒸着法 / 有機金属化学気相堆積法 / plasma-assisted MOCVD / ferroelectric memory / 酸素プラズマ / プラズマ / 有機金属気相成長法(MOCVD) / ferroelectric-gate transistor / neural network / non-volatile memory / ferroelectrics / ニューラルネット / moleculat beam epitaxy (MBE) / two dimensional electron gas / high electron mobility transistor (HEMT) / ferroelectric thin film / 分子線エピタキシ-(MBE) / 2次元電子ガス / 高電子移動度トランジスタ(HEMT) / SiC / 単極性動作 / 半導体コンタクト / トランジスタ / シリコンカーバイド / グラフェン / 酸化物半導 / 可変キャパシタ / 可変容量キャパシタ / マイクロ・ナノデバイス / 半導体超微細化 / ナノ材料 / ディスプレイ / インジウム・スズ酸化物 / 強誘電体ゲート / 透明トランジスタ / メモリ / 部分分極反転 / アナログメモリ / 多値メモリ / 強誘電体メモリ(FeRAM) / 導電率変調 / インジウムスズ酸化物(ITO) / 機能デバイス / ロジック回路 / (Bi,La)_4Ti_3O_<12>(BLT) / Sr_2(Ta, Nb)_2O_7 / (Bi, La)_4Ti_3O_<12>(BLT) / 誘導電体メモリ / エピタキシャル成長 / PZT / CeO_2 … More Except Principal Investigator Si / SrBi_2Ta_2O_9 / YMnO_3 / SOI / GaAs-on-Si / MISFET / 強誘電体 / 弾性歪 / 超高圧 / メムキャパシタ / スパイキングニューラルネットワーク / アナログデバイス / 低消費電力 / コンパクト / 人工知能 / 局所的学習則 / アモルファス金属酸化物半導体 / 単一アナログデバイス / ニューロモーフィックシステム / Silicon / Memory / Ferroelectric / PbZr_<1-x>Ti_xO_3 / MFSFET / 強誘電体メモリ / シリコン / メモリ / strain-free / photoluminescence / annealing / elastic strain / thermal expansion coefficient / ultrahigh pressure / GaAs‐on‐Si / アニール / 熱膨張率 / Adaptive-Learning / Self-Learning / Ferroelectrics / Neural-Networks / ニューロ素子 / MOSFET / 自己学習機能 / 適応学習 / 自己学習 / ニューラルネット / 変調ドーピング / 物性制御 / MOMBE / MBE / 歪超格子 / II-VI族化合物半導体 / Contact resistance / Liquid material / Power device / Solution process / Silicon carbide / マイクロマイン / 半導体レーザー / マイクロマシン / ニューロトランジスタ / 光集積回路 / 光インターコネクト / 並列光情報処理 / 微小光学 / 光通信 / 半導体レーザ / GaAs / 熱不整 / ヘテロ構造 Less

Investigation of steep-slope transistor using ferroelectric polarization dynamicsPrincipal Investigator
- Principal Investigator
  
  Tokumitsu Eisuke
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Japan Advanced Institute of Science and Technology
Real Neuromorphic Systems using Single Analog Devices and Local Learning Rules
- Principal Investigator
  
  Kimura Mutsumi
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 60040:Computer system-related
- Research Institution
  Nara Institute of Science and Technology
Solution-processed SiC Films and Its Application to Power Devices
- Principal Investigator
  
  Inoue Satoshi
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Proposal of varialbe-area electrode structure by field effect and its application to variable capacitorsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Current control of graphene channel transistors using semiconductor contactsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
Study on lithography-less solution process for nano-devices and its application to nonvolatile memoriesPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Japan Advanced Institute of Science and Technology
  Tokyo Institute of Technology
強誘電体ゲートを用いた大電流透明薄膜トランジスタの研究Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
強誘電体を用いた不揮発性多値・アナログメモリの研究Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuitsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
  Tohoku University
強誘電体・高誘電率材料・導電性酸化物を用いた新しい集積機能デバイスの研究Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
強誘電体を用いた金属・導電体中の電荷制御とスイッチング素子への応用Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
強誘電体・高誘電率材料を用いた機能性デバイスの試作とロジック回路への応用Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
人工単結晶強誘電体ドットの形成とマイクロキャパシタへの適用Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
  Tokyo Institute of Technology
Development of Low-Temperature MOCVD Technology for Ferroelectric Thin FilmsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Study on Singl-Transistor-Cell-Type Ferroelectric Memory
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applicationsPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
強誘電体微細構造の形成と不揮発性微小メモリ効果の実現Principal Investigator
- Principal Investigator
  
  徳光永輔
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
超並列光エレクトロニクス
- Principal Investigator
  
  伊賀健一
- Project Period (FY)
  1995 – 2000
- Research Category
  
  Grant-in-Aid for COE Research
- Research Institution
  Tokyo Institute of Technology
Preparation of ferroelectric BaMgF_4films on GaAs for the control of two-dimensional electron gasPrincipal Investigator
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Fabrication of Long-Life Laser Diodes in GaAs films on Si formed by annealing under ultrahigh pressure
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
超高圧下アニールと圧力・温度差比例降下法によるヘテロ構造の熱不整欠陥の抑制
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
Self-Learning Functions in Electron Devices and Their Applications to Neural Networks
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子機器工学
- Research Institution
  Tokyo Institute of Technology
歪超格子によるII-VI族化合物半導体の物性制御
- Principal Investigator
  
  小長井誠
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology

[Journal Article] Neuromorphic System Using Memcapacitors and Autonomous Local Learning2023
- Author(s)
  Kimura Mutsumi、Ishisaki Yuma、Miyabe Yuta、Yoshida Homare、Ogawa Isato、Yokoyama Tomoharu、Haga Ken-Ichi、Tokumitsu Eisuke、Nakashima Yasuhiko
- Journal Title
  
  IEEE Transactions on Neural Networks and Learning Systems
  
  Volume: 34 Issue: 5 Pages: 2366-2373
- DOI
  10.1109/tnnls.2021.3106566
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K11876
[Journal Article] Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment2022
- Author(s)
  Mohit、Wen Yuli、Hara Yuki、Migita Shinji、Ota Hiroyuki、Morita Yukinori、Ohdaira Keisuke、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SH Pages: SH1004-SH1004
- DOI
  10.35848/1347-4065/ac5a95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistors2022
- Author(s)
  Miyasako Takaaki、Yoneda Shingo、Hosokura Tadasu、Kimura Masahiko、Tokumitsu Eisuke
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 26 Pages: 262901-262901
- DOI
  10.1063/5.0089049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Electrical properties of ferroelectric Y-doped Hf-Zr-O thin films prepared by chemical solution deposition2022
- Author(s)
  Sasaki Keisuke、Mohit、Hashiguchi Sho、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SN Pages: SN1027-SN1027
- DOI
  10.35848/1347-4065/ac7fda
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment2022
- Author(s)
  Hasan Md Mehedi、Mohit、Islam Md Mobaidul、Bukke Ravindra Naik、Tokumitsu Eisuke、Chu Hye-Yong、Kim Sung Chul、Jang Jin
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 5 Pages: 725-728
- DOI
  10.1109/led.2022.3162325
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process2022
- Author(s)
  Mohit、Murakami Tatsuya、Tokumitsu Eisuke
- Journal Title
  
  physica status solidi (RRL) Rapid Research Letters
  
  Volume: 2022 Issue: 10 Pages: 2100581-2100581
- DOI
  10.1002/pssr.202100581
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Thermal stability of ferroelectricity in hafnium?zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications2021
- Author(s)
  Mohit、Migita Shinji、Ota Hiroyuki、Morita Yukinori、Tokumitsu Eisuke
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 4 Pages: 041006-041006
- DOI
  10.35848/1882-0786/abebf4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process2021
- Author(s)
  Mohit、Miyasako Takaaki、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBM02-SBBM02
- DOI
  10.35848/1347-4065/abd6da
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering2021
- Author(s)
  Hara Yuki、Mohit、Murakami Tatsuya、Migita Shinji、Ota Hiroyuki、Morita Yukinori、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SF Pages: SFFB05-SFFB05
- DOI
  10.35848/1347-4065/ac1250
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis2021
- Author(s)
  Hasan Md Mehedi、Mohit、Bae Jinbaek、Tokumitsu Eisuke、Chu Hye-Yong、Kim Sung Chul、Jang Jin
- Journal Title
  
  Applied Physics Letters
  
  Volume: 119 Issue: 9 Pages: 093502-093502
- DOI
  10.1063/5.0058127
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process2020
- Author(s)
  Mohit、Murakami Tatsuya、Haga Ken-ichi、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SP Pages: SPPB03-SPPB03
- DOI
  10.35848/1347-4065/aba50b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application2020
- Author(s)
  Mohit、Haga Ken-ichi、Tokumitsu Eisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SM Pages: SMMB02-SMMB02
- DOI
  10.35848/1347-4065/ab86de
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00240
[Journal Article] Investigation of solution-processed bismuth-niobium-oxide films2014
- Author(s)
  Satoshi Inoue, Tomoki Ariga, Shin Matsumoto, Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Norimichi Chinone, Yasuo Cho and Tatsuya Shimoda
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 116 Issue: 15
- DOI
  10.1063/1.4898323
- NAID
  120005652019
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119, KAKENHI-PROJECT-24656027, KAKENHI-PROJECT-23226008
[Journal Article] Observation of high dielectric constant of Bi-Nb-O<sub>x</sub> thin-film capacitors fabricated by chemical solution deposition process2014
- Author(s)
  Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu and Tatsuya Shimoda
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 11 Issue: 16 Pages: 20140651-20140651
- DOI
  10.1587/elex.11.20140651
- NAID
  130004678212
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography2014
- Author(s)
  Koji Nagahara, Bui Nguyen Quoc Trinh, Eisuke Tokumitsu, Satoshi Inoue, and Tatsuya Shimoda,
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 2S Pages: 02BC14-02BC14
- DOI
  10.7567/jjap.53.02bc14
- NAID
  210000143362
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Relationship between Source/Drain-Contact Structures and Switching Characteristics in Oxide-Channel Ferroelectric-Gate Thin-Film Transistors2014
- Author(s)
  Ken-ichi Haga, Yuuki Nakada, Dan Ricinschi, and Eisuke Tokumitsu
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 9S Pages: 09PA07-09PA07
- DOI
  10.7567/jjap.53.09pa07
- NAID
  210000144476
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119, KAKENHI-PROJECT-24560007
[Journal Article] Fabrication and Characterization of Ferroelectric-Gate Thin-Film Transistors with an Amorphous Oxide Semiconductor, a-In-Ga-Zn-O2014
- Author(s)
  Ken-ichi　Haga and Eisuke Tokumitsu
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 11 Pages: 111103-111103
- DOI
  10.7567/jjap.53.111103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Rheology printing for metal-oxide patterns and devices2014
- Author(s)
  Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, PhanTrong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu and Tatsuya Shimoda
- Journal Title
  
  Journal of Materials Chemistry C
  
  Volume: 2 Issue: 1 Pages: 40-49
- DOI
  10.1039/c3tc31842g
- NAID
  120005477875
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions2013
- Author(s)
  Yuichi Nagahisa, Yuichi Harada, and Eisuke Tokumitsu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 103 Issue: 22
- DOI
  10.1063/1.4833755
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions2013
- Author(s)
  Yuichi Nagahisa, Yuichi Harada, and Eisuke Tokumitsu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: vol.103, No.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656204
[Journal Article] High-performance solution-processed ZrlnZnO thin-film transistors2013
- Author(s)
  Phan Trong Tue, Takaaki Miyasako, Jinwang Li, Huynh Thi Cam Tu, Satoshi Inoue, Eisuke Tokumitsu, and Tatsuya Shimoda
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: Vol.60, No.1 Issue: 1 Pages: 320-326
- DOI
  10.1109/ted.2012.2227483
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Evaluation of Channel Modulation in IN203/(Bi, La)4Ti3012 Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements2012
- Author(s)
  Eisuke Tokumitsu & Kazuya Kikuchi
- Journal Title
  
  Ferroelectrics
  
  Volume: 429:1,15-21 Issue: 1 Pages: 305-311
- DOI
  10.1080/00150193.2012.676933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions2012
- Author(s)
  Yuichi Nagahisa, Eisuke Tokumitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 679-682
- DOI
  10.4028/www.scientific.net/msf.717-720.679
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360119
[Journal Article] Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions2012
- Author(s)
  Yuichi Nagahisa, Eisuke Tokumitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.717-720 Pages: 679-682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656204
[Journal Article] Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Polymer Poly(vinylidene fluoride-trifluoroethylene)2011
- Author(s)
  Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara, and Eisuke Tokumitsu
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)2011
- Author(s)
  Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, and Hiroshi Ishiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.99, No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Ferroelectric-Gate Thin-Film Transitor Fabricated by Total Solution Deposition Process2011
- Author(s)
  Takaaki Miyasako, Bui Nguyen Quoc Trinh Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)2011
- Author(s)
  Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.99 No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Ferroelectric-Gate Thin-Film Transitor Fabricated by Total Solution Deposition Process2011
- Author(s)
  Takaaki Miyasako, B.N.Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Polymer Poly(vinylidene fluoride-trifluoroethylene)2011
- Author(s)
  Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Fabrication of IGZO and In_2O_3-Channel Ferroelectric-Gate Thin Film Transistors2010
- Author(s)
  Eisuke Tokumitsu, Tomohiro Oiwa
- Journal Title
  
  Mater.Res.Soc.Symp.Proc.(1250-G13-07)
  
  Volume: 1250 Pages: 145-150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価2010
- Author(s)
  Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, 藤崎芳久、石原宏、徳光永輔
- Journal Title
  
  信学技報(IEICE Technical Report) SDM2010-16、OME2010-16(2010-04)
  
  Volume: Vol.110 No.15 Pages: 71-75
- NAID
  110008001558
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Fabrication of IGZO andIn_2O_3-Channel Ferroelectric-Gate Thin Film Transistors2010
- Author(s)
  Eisuke Tokumitsu and Tomohiro Oiwa
- Journal Title
  
  Mater. Res. Soc. Symp. Proc
  
  Volume: Vol.1250, 1250-G13-07 Pages: 145-150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Improvement of Sol-Gel DerivedPbZr_xTi_(1-x) O_3 Film Properties Using Thermal Press Treatment2010
- Author(s)
  Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu and Tatsuya Shimoda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Alow-temperature crystallization path for device-quality ferroelectric films2010
- Author(s)
  Jinwan Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Tron Tue, Eisuke Tokumitsu, Tadaoki Mitani and Tatsuya Shimoda
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.97, No.10 Pages: 1029051-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Improvement of Sol-Gel Derived PbZr_xTi_<1-x>O_3 Film Properties Using Thermal Press Treatment2010
- Author(s)
  Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu, Tatsuya Shimoda
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Totally solution-processed feerroelectric-gate thin-film transistor2010
- Author(s)
  Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Tron Tue, Eisuke Tokumitsu, Tatsuya Shimoda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97 Pages: 1735091-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価2010
- Author(s)
  Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, 藤崎芳久、石原宏、徳光永輔
- Journal Title
  
  信学技報(IEICE Technical Report)
  
  Volume: Vol.110、No.15 Pages: 71-75
- NAID
  110008001558
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Totally solution-processed feerroelectric-gate thin-film transistor2010
- Author(s)
  Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Tron Tue, Eisuke Tokumitsu, and Tatsuya Shimoda
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.97, No.17 Pages: 1735091-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Fabrication and Characterization of ITO/BZN Thin Film Transistors2009
- Author(s)
  Eisuke Tokumitsu, Yohei Kondo
- Journal Title
  
  Journal of the Korean Physical Society 54-1
  
  Pages: 539-543
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Fabrication and Characterization of ITO/BZN Thin Film Transistors2009
- Author(s)
  Eisuke TOKUMITSU and Yohei KONDO
- Journal Title
  
  Journal of the Korean Physical Society
  
  Volume: Vol.54, No.1 Pages: 539-543
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Anomalously High Channel Mobility in SiC MOSFET with Al_2O_3/SiO_x/SiC Gate Structure2009
- Author(s)
  Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 683-686
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360144
[Journal Article] Data Retention and Readout Degradation Properties of Pt/Sr_<0.7>Sm<0.07>Bi_<2.2>Ta_2O_9/HfO_2/Si Structure Ferroelectric-Gate Field Effect Transistors2007
- Author(s)
  Hirokazu Saiki, Eisuke Tokumitsu
- Journal Title
  
  Japan Journal of Applied Physics Vol.46, No.1
  
  Pages: 261-266
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Reduction of Off Current in ITO-Channel Thin Film Transistor with Ferroelectric(Bi,La)_4Ti_3O_<12> Gate Insurator2007
- Author(s)
  Eisuke Tokumitsu, Norifumi Fujimura, Takashi Sato, Etsu Shin, Masaru Senoo
- Journal Title
  
  The Proceedings of the 3rd International TFT Conference(ITC'07) in conjunction with SIC-MID Europe Chapter Spring Meeting, Rome
  
  Pages: 238-241
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Improved Electrical Properties of ITO-Channel Thin Film Transistor Ferroelectric Gate Insulator2006
- Author(s)
  E.Tokumitsu, T.Fujimura, E.Shin
- Journal Title
  
  13th International Workshop on Oxide Electronics (WOE13)
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] (Invited), ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator2006
- Author(s)
  Eisuke Tokumitsu
- Journal Title
  
  ITC'06 International Thin-Film Transistor Conference, Kitakyuushu-City No.6.2
  
  Pages: 170-175
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures2006
- Author(s)
  Eisuke Tokumitsu
- Journal Title
  
  2005 Fall meeting, Materials Research Society, Boston Vol.902E
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] (Invited), ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator2006
- Author(s)
  E.Tokumitsu
- Journal Title
  
  ITC'06 International Thin-Film Transistor Conference, Kitakyusyu-City No.62
  
  Pages: 170-175
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] ITO-channel thin film transistor with (Ba, Sr)TiO_3 gate insulator2006
- Author(s)
  Eisuke Tokumitsu, Etsu Shin, Masaru Senoo
- Journal Title
  
  European Materials Research Society(E-MRS) IUMRS ICEM 2006 Spring Meeting, Nice (Paper R IX 04)
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] (Invited), ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator2006
- Author(s)
  E.Tokumitsu
- Journal Title
  
  ITC'06 International Thin-Film Transistor Conference, Kitakyuushu-City No.6.2
  
  Pages: 170-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures2006
- Author(s)
  Eisuke Tokumitsu, Masaru Senoo, Etsu Shin
- Journal Title
  
  2005 Fall meeting, Materials Research Society, Boston Vol.902E
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On-Current2006
- Author(s)
  Eisuke Tokumitsu
- Journal Title
  
  (ICSICT-2006) 8th International Conference on Solid-State and Integrated-Circuit Technology Proceedings(part 2 of 3), Shanghai
  
  Pages: 717-720
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Low Temperature Deposition of HfO_2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition2006
- Author(s)
  Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Ozeki, Eisuke Tokumitsu
- Journal Title
  
  Materials Science Forum Vol.527-529
  
  Pages: 1079-1082
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O_3 films2005
- Author(s)
  Eisuke Tokumitsu
- Journal Title
  
  Journal of the European Ceramic Society Vol.25
  
  Pages: 2277-2280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Use of ferroelectric gate insulator for thin film transistors with ITO channel2005
- Author(s)
  Eisuke Tokumitsu
- Journal Title
  
  Journal of Microelectronic Engineering Vol.80
  
  Pages: 305-308
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O_3 films2005
- Author(s)
  Eisuke Tokumitsu, Taka-aki Miyasako, Masaru Senoo
- Journal Title
  
  Journal of the European Ceramic Society 25
  
  Pages: 2277-2280
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Use of ferroelectric gate insulator for thin film transistors with ITO channel2005
- Author(s)
  E.Tokumitsu, M.Senoo, T.Miyasako
- Journal Title
  
  Journal of Microelectronic Engineering Vol.80
  
  Pages: 305-308
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Use of ferroelectric gate insulator for thin film transistors with ITO channel2005
- Author(s)
  E.Tokumitsu, M.Senoo, T.Miyasako
- Journal Title
  
  Journal of Microelectronic Engineering vol.80
  
  Pages: 305-308
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr, Ti)O_3 films2005
- Author(s)
  Eisuke Tokumitsu, Taka-aki Miyasako, Masaru Senoo
- Journal Title
  
  Journal of the European Ceramic Society Vol.25
  
  Pages: 2277-2280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures2005
- Author(s)
  Eisuke Tokumitsu, Masaru Senoo, Etsu Shin
- Journal Title
  
  2005 Fall meeting, Materials Research Society, Wisconsin Paper T10.54
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability2005
- Author(s)
  Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu
- Journal Title
  
  Applied Physics Letters Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures2005
- Author(s)
  Eisuke Tokumitsu, Masaru Senoo, Etsu Shin
- Journal Title
  
  2005 Fall meeting, Materials Research Society, Wisconsin Paper T10.54
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Use of ferroelectric gate insulator for thin film transistors with ITO channel2005
- Author(s)
  E.Tokumitsu, M.Senoo, T.Miyasako
- Journal Title
  
  Journal of Microelectronic Engineering vol.80
  
  Pages: 305-308
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O_3 films2005
- Author(s)
  Eisuke Tokumitsu, Taka-aki Miyasako, Masaru Senoo
- Journal Title
  
  Journal of the European Ceramic Society 25
  
  Pages: 2277-2280
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability2005
- Author(s)
  Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu
- Journal Title
  
  Applied Physics Letters vol.86
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability2005
- Author(s)
  Takaaki Miyasako, Masaru Sanoo, Eisuke Tokumitsu
- Journal Title
  
  Applied Physics Letters vol.86
- Data Source
  KAKENHI-PROJECT-17656105
[Journal Article] Electrical Properties of Bi_<4-x>Pr_xTi_3O_<12>(BPT) Thin Films Prepared by Sol-Gel Method2005
- Author(s)
  Tomoharu Aoki, Takeo Tani, Eisuke Tokumitsu
- Journal Title
  
  Transactions of the Materials Research Society of Japan Vol.30,No.1
  
  Pages: 249-251
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process2004
- Author(s)
  Takaaki Miyasako, Masaru Senoo, Eisuke Tokumitsu
- Journal Title
  
  IEICE Transactions on Electronics Vol.E87-C No.10
  
  Pages: 1694-1699
- NAID
  110003214778
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Ferroelectric Thin Films for Gate Insulator Applications of Field-Effect-Transistor(FET)2004
- Author(s)
  E.Tokumitsu
- Journal Title
  
  The 8th International Symposium on Ferroic Domains And Micro-to Nanoscopic Structures
- Data Source
  KAKENHI-PROJECT-15360157
[Journal Article] Ferroelectric Thin Films for Gate Insulator Applications of Field-Effect-Transistor (FET)2004
- Author(s)
  E.Tokumitsu
- Journal Title
  
  The 8th International Symposium on Ferroic Domains And Micro-to Nanoscopic Structrures Invited
  
  Pages: 57-58
- Data Source
  KAKENHI-PROJECT-16656092
[Patent] 固体電子装置およびその作製方法2006
- Inventor(s)
  徳光永輔
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2006-074642
- Filing Date
  2006-03-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Patent] 固体電子装置2005
- Inventor(s)
  徳光永輔
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2005-039208
- Filing Date
  2005-02-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Patent] 固体電子装置2004
- Inventor(s)
  徳光永輔
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2004-280381
- Filing Date
  2004-09-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360157
[Presentation] 酸化物半導体デバイスへの期待―強誘電体ゲートトランジスタを中心として－2023
- Author(s)
  徳光永輔
- Organizer
  第70回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] 原子状水素処理を用いたスパッタHf-Zr-O膜の強誘電特性改善2022
- Author(s)
  徳光永輔、モヒート、文昱力、原佑樹、右田真司、太田裕之、森田行則、大平圭介
- Organizer
  第19回Cat-CVD研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Yドープ Hf-Zr-O 薄膜の化学溶液堆積における仮焼成の効果2022
- Author(s)
  佐々木啓介、モヒート、徳光永輔
- Organizer
  第39回強誘電体会議
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] 溶液プロセスによる薄膜CeOx/(Hf,Zr)O2/CeOx積層構造の形成2022
- Author(s)
  齋藤　瑞、モヒート、東嶺　孝一、徳光　永輔
- Organizer
  日本ゾルゲル学会第20回討論会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] 溶液プロセスによるIn-Sn-O（ITO）薄膜の形成と強誘電体ゲート薄膜トランジスタへの応用2022
- Author(s)
  久保田剛郎、徳光永輔
- Organizer
  第19回薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Ferroelectric gate thin films transistors with Y-doped Hf-Zr-O gate insulator and In-Sn-O channel2022
- Author(s)
  E. Tokumitsu, Y. Kubota, Mohit, K. Sasaki
- Organizer
  14th Japan-China Symposium on Ferroelectric Materials and Their Applicatiopns (JCFMA-14),
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] ITO Channel Thin Film Transistor using Solution-Derived Ferroelectric Hf-Zr-O Gate Insulator2022
- Author(s)
  Eisuke Tokumitsu
- Organizer
  13th Korea-Japan Conference on Ferroelectrics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] HfO2-based ferroelectric-gated variable-area capacitors2022
- Author(s)
  Takaaki Miyasako, Shingo Yoneda, Tadasu Hoisokura, Masahiko Kimura, Eisuke Tokumitsu
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] 化学溶液堆積法によるHf-Zr-O膜へのドーピングと強誘電性評価2022
- Author(s)
  橋口　渉、徳光永輔
- Organizer
  第19回薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Ferroelectric Thin Film for a Capacitor-type Synapse in Neuromorphic Systems2021
- Author(s)
  Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Eisuke Tokumitsu, Kenichi Haga, Toshihiro Doi, and Mutsumi Kimura
- Organizer
  AM-FPD '21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] 溶液プロセスによるCeOx/ Hf-Zr-O積層構造の形成と評価2021
- Author(s)
  齋藤瑞、Mohit、徳光永輔
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Fabrication of ferroelectric gate thin film transistors using CSD Y-HZO and sputtered HZO with sputtered ITO channel2021
- Author(s)
  Mohit, Shinji Migita, Hiroyuki Ota, Yukinori Morita, Eisuke Tokumitsu
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Memcapacitive Characteristics of Ferroelectric Capacitance for Neuromorphic Systems and Application of Y-doped Hf0.5Zr0.5O22021
- Author(s)
  Daiki Matsukawa, Yuma Ishisaki, Hiroki Umemura, Mutsumi Kimura, Mohit, and Eisuke Tokumitsu
- Organizer
  IMFEDK 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] Preparation of ferroelectric lanthanum doped hafnium-zirconium oxide thin films by solution process2021
- Author(s)
  Mohit and Eisuke Tokumitsu
- Organizer
  The 8th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] ニューロモーフィックシステムにおけるキャパシタ型シナプス用強誘電体薄膜の誘電特性評価と文字補正応用2021
- Author(s)
  石﨑勇真, 梅村浩輝, 松川大毅, 徳光永輔, 羽賀健一, 木村睦
- Organizer
  薄膜材料デバイス研究会第18回研究集会
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] 化学溶液プロセスによるYドープHZO薄膜の作製と評価2021
- Author(s)
  佐々木啓介、モヒート、徳光永輔
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Ferroelectric gate thin film transistor with La-HZO gate insulator and indium-tin-oxide channel prepared by solution process2021
- Author(s)
  Mohit, and Eisuke Tokumitsu
- Organizer
  European Materials Research Society
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] スパッタHf-Zr-O膜における強誘電性の安定性向上2021
- Author(s)
  原　佑樹,　モヒート,　右田　真司 ,　太田裕之,　森田裕史,　徳光永輔
- Organizer
  第38回強誘電体会議
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Enhancement of ferroelectricity in sputtered hafnium-zirconium oxide thin films by catalytically generated atomic hydrogen treatment2021
- Author(s)
  Mohit, Yuli Wen, Yuki Hara, Shinji Migita, Hiroyuki Ota, Yukinori Morita, Keisuke Ohdaira and Eisuke Tokumitsu
- Organizer
  2021 International Wiorkshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O2021
- Author(s)
  Mohit, Shinji Migita, Hiroyuki Ota, Yukinori Morita and Eisuke Tokumitsu
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Yttrium Doping Concentration Dependence on Ferroelectric Properties of Hafnium-Zirconium Oxide Prepared by Chemical Solution Deposition2021
- Author(s)
  Keisuke Sasaki, Mohit, and Eisuke Tokumitsu
- Organizer
  Materials Research Meeting 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Fabrication of Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors using Yttrium Doped Hafnium-Zirconium Dioxide by Chemical Solution Process2020
- Author(s)
  Mohit, Takaaki Miyasako and Eisuke Tokumitsu
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] ニューラルネットワーク用強誘電体薄膜の誘電特性評価2020
- Author(s)
  石崎勇真, 梅村浩輝, 松川大毅, 木村睦, 徳光永輔, 羽賀健一, 土井利浩
- Organizer
  電子情報通信学会, EID2020-5, pp. 17-20, 2020年12月
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] Effect of Annealing Environment on Ferroelectric Properties of Hf-Zr-O (HZO) Thin Films Prepared by Solution Process2020
- Author(s)
  Mohit，Ken-Ichi Haga，Eisuke Tokumitsu
- Organizer
  第37回強誘電体会議
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures2020
- Author(s)
  Mohit，Eisuke Tokumitsu
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Robustness of Ferroelectricity in Hafnium- Zirconium Dioxide Films Deposited By Sputtering and Chemical Solution Deposition for Ferroelectric Transistor Applications2020
- Author(s)
  Mohit, S. Migita, H. Ota, Y. Morita, and E. Tokumitsu
- Organizer
  PRiME (Pacific Rim Meeting on Electrochemical & Solid State Science) 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00240
[Presentation] Characterization of In2O3 Channel Ferroelectric-Gate Thin Film Transistors2014
- Author(s)
  Ken-Ichi Haga, Yuki Nakada, Dan Ricinschi and Eisuke Tokumitsu
- Organizer
  International Thin-FilmTransistor Conference (ITC 2014)
- Place of Presentation
  Delft, the Netherlands,
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions2013
- Author(s)
  Y.Nagahisa, Y.Harada, E.Tokumitsu
- Organizer
  Graphene Week 2013, GW2013-142
- Place of Presentation
  Chemnitz, Germany(TuP-27, Poster発表4 June)
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Electrical characterization of gate modulation in graphene/n-SiC contacts2013
- Author(s)
  Yuichi Nagahisa, Eisuke Tokumitsu
- Organizer
  5th International conference on Recent Progress in Graphene Research
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Observation of High on/off Drain Current Ratio in Graphene Transistors with n-type doped SiC Source/Drain Regions2013
- Author(s)
  Y.Nagahisa, Y.Harada, E. Tokumitsu
- Organizer
  Graphene Week 2013
- Place of Presentation
  City Hall, Chemnitz, Germany
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Use of low-temperature-deposited high-k gate insulators for SiC power MOSFETs2013
- Author(s)
  Eisuke Tokumitsu
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2013
- Place of Presentation
  Ramada Jeju, Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Use of low-temperature-deposited high-k gate insulators for SiC power MOSFETs2013
- Author(s)
  Eisuke Tokumitsu
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2013
- Place of Presentation
  Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Use of low- temperature-deposited high-k gate insulators for SiC power MOSFETs2013
- Author(s)
  Eisuke Tokumitsu
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2013
- Place of Presentation
  Ramada Jeju, Jeju, Korea(492)
- Invited
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Fundamental Study on Thermal Nanoimprint Process for Oxide-channel Thin Film Transistor Fabrication2013
- Author(s)
  Eisuke Tokumitsu, Kei Sato, Ken-ichi Haga
- Organizer
  the 12th International Conference on Nanoinprint and Nanoprint Technology 2013
- Place of Presentation
  Barcerona, Spain
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Fabrication of 4H-SiC MOSFETs Using Stacked Al_2O_3 Gate Insulator with Pre-Annealed Al_2O_3 Buffer Layer2013
- Author(s)
  H.Yamada, S.Hino, N.Miura, M.Imaizumi, S.Yamakawa, and E.Tokumitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan(We-P-25, Poster, Oct.2)
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer2013
- Author(s)
  H.Yamada, S.Hino, N.Miura, M.Imaizumi, S.Yamakawa, and E.Tokumitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Ferroelectric-gate oxide channel thin film transistors fabricated by solution process2013
- Author(s)
  Eisuke Tokumitsu
- Organizer
  International Electron Devices and Materials Symposium
- Place of Presentation
  Nantou, Taiwan
- Invited
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors2013
- Author(s)
  Eisuke Tokumitsu, Etsu Shin, Hiroshi Shibata
- Organizer
  European Materials Research Sciety (EMRS) 2013 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Electrical characterization of gate modulation in graphene/n-SiC contacts2013
- Author(s)
  Yuichi Nagahisa, Eisuke Tokumitsu
- Organizer
  5th International conference on Recent Progress in Graphene Research
- Place of Presentation
  Tokyo Institute of Technology, Tokyo
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Fabrication and Characterization of An-Sn-O series oxide thin film transistors2012
- Author(s)
  Ken-ichi Haga and Eisuke Tokumitsu
- Organizer
  ITC 2012(8thInternational Thin-Film Transistor Conference)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes2012
- Author(s)
  Eisuke Tokumitsu, Gwang-Geun Lee
- Organizer
  E-MRS 2012, Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2012-05-16
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Fabrication and Characterization of An-Sn-O series oxide thin film transistors2012
- Author(s)
  Ken-ichi Haga, Eisuke Tokumitsu
- Organizer
  ITC 2012 (8th International Thin-Film Transistor Conference)
- Place of Presentation
  Lisbon, Portugal(口頭発表)
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Comparative Study of Metalorganic Chemical Vapour Deposition of HfO_2 and Al_2O_3 Gate Insulators on SiC for Power MOSFET Applications2012
- Author(s)
  Eisuke Tokumitsu, Isahaya Yamamura, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani and Tatsuo Oomori
- Organizer
  WoDiM 2012(17th Workshop on Dielectrics in Microelectronics)
- Place of Presentation
  Dresden, Germany(Poster)
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Fabrication and Characterization of An-Sn-O series oxide thin film transistors2012
- Author(s)
  Ken-ichi Haga and Eisuke Tokumitsu
- Organizer
  ITC 2012(8th International Thin-Film Transistor Conference)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Characterization of Electrical Properties of Graphene/n-SiC Contacts2012
- Author(s)
  Yuichi Nagahisa, Yuichi Harada, and Eisuke Tokumitsu
- Organizer
  3rd International Symposium on Graphene Devices
- Place of Presentation
  Saint-Aubin, France
- Data Source
  KAKENHI-PROJECT-24656204
[Presentation] Oxide-channel thin film transistors using ferroelectric and high-k gate insulators2012
- Author(s)
  (invited)Eisuke Tokumitsu
- Organizer
  International Union of Materials Research Societies-International Conference on Electronic Materials 2012(IUMR S-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO2011
- Author(s)
  Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara、Eisuke Tokumitsu
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Source solution dependence on electrical properties of In-Zn-O channel thin film transistors2011
- Author(s)
  Eisuke Tokumitsu, Yasuhiro Takahashi, Toshihiko Kaneda, Tatsuya Shimoda
- Organizer
  E-MRS2011 Fall Meeting, XII6, Warsaw University of Technology
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] 様々な液体原料を用いたIn-Zn-O薄膜の形成と薄膜トランジスタ応用2011
- Author(s)
  清水貴也、羽賀健一、徳光永輔、金田敏彦、下田達也
- Organizer
  薄膜材料デバイス研究会、第8回研究集会、(ポスターセッション)
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都)
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] In_2O_3 & IZO Channel Thin-Film Transistors Prepared by Chemical Solution Process2011
- Author(s)
  Eisuke Tokumitsu and Yasuhiro Takahashi
- Organizer
  7th International Thin-Film Transistor Conference(ITC2011)
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Switching Characteristics of In_2O_3/(Bi,La)_4Ti_3O_<12> Ferroelectric-Gate Thin Film Transistors2011
- Author(s)
  Eisuke Tokumitsu, Kazuya Kikuchi
- Organizer
  EMF 2011 (12th European Meeting on Ferroelectricity)
- Place of Presentation
  Bordeaux Univ., France
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] SUB-MICRON FERROELECTRIC-GATE THIN FILM TRANSISTOR USING SOL-GEL ITO CHANNEL AND STACKED(BLT/PZT) INSULATOR2011
- Author(s)
  Bui Nguyen Quoc Trinh, Takaaki Miyasako, Toshihiko Kaneda, Phan Trong Tue, Pham Van Thanh, Eisuke Tokumitsu, and Tatsuya Shimoda
- Organizer
  International Symposium on Intergrated Functionalities(ISIF 2011)
- Place of Presentation
  Cambridge, U. K
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Solution-processed oxide thin-film transistors using La-Ta-O/Bi-Nb-Ostacked gate insulator2011
- Author(s)
  Takaaki Miyasako, Masatoshi Onoue, Hirokazu Tsukada, Eisuke Tokumitsu, and Tatsuya Shimoda
- Organizer
  2011 Fall meeting, Materials Research Society
- Place of Presentation
  Boston, U. S. A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Switching Characteristics ofIn_2O_3/(Bi, La) 4Ti_3O_(12) Ferroelectric-Gate Thin Film Transistors2011
- Author(s)
  Eisuke Tokumitsu and Kazuya Kikuchi
- Organizer
  EMF 2011(12thEuropean Meeting on Ferroelectricity)
- Place of Presentation
  Bordeaux Univ., France
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Leakage Cuurent property of the PZT films improved by thermal press treatment2011
- Author(s)
  Joo-Nam Kim, Toshihiko Kaneda, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  The 10th international conference on Nanoimprint and Nanoprint Technology(NNT 2011)
- Place of Presentation
  The Shilla Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] In_2O_3をチャネルに用いた強誘電体ゲートTFTの電気的特性2011
- Author(s)
  菊池和哉、徳光永輔
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Source solution dependence on electrical properties of In-Zn-O channel thin film transistors2011
- Author(s)
  Eisuke Tokumitsu, Yasuhiro Takahashi, Toshihiko Kaneda, Tatsuya Shimoda
- Organizer
  E-MRS 2011 Fall Meeting
- Place of Presentation
  Warsaw University of Technology, Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] 液体プロセスによるIn_2O_3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成2011
- Author(s)
  高橋泰裕、徳光永輔
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] (Poster) In_2O_3 & IZO Channel Thin-Film Transistors Prepared by Chemical Solution Process2011
- Author(s)
  Eisuke Tokumitsu, Yasuhiro Takahashi
- Organizer
  7th International Thin-Film Transistor Conference (ITC2011)
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Leakage Cuurent property of the PZT films improved by thermal press treatment2011
- Author(s)
  Joo-Nam Kim, Toshihiko Kaneda, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  The 10th international conference on Nanoimprint and Nanoprint Technology (NNT 2011)
- Place of Presentation
  The Shilla Jeju, Korea
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Solution-processed oxide thin-film transistors using La-Ta-O/Bi-Nb-O stacked gate insulator2011
- Author(s)
  Takaaki Miyasako, Masatoshi Onoue, Hirokazu Tsukada, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  2011 Fall meeting, Materials Research Society
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] 様々な液体原料を用いたIn-Zn-O薄膜の形成と薄膜トランジスタ応用2011
- Author(s)
  清水貴也、羽賀健一、徳光永輔、金田敏彦、下田達也
- Organizer
  薄膜材料デバイス研究会、第8回研究集会
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都)(ポスターセッション)
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] High performance Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process2011
- Author(s)
  Masatoshi Onoue, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  2011 Fall meeting, Materials Research Society
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] (ポスターセッション)スパッタ法によるAl-Zn-Sn-OチャネルTFTの作製2010
- Author(s)
  羽賀健一、徳光永輔
- Organizer
  薄膜材料デバイス研究会、第7回研究集会
- Place of Presentation
  奈良100年会館
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] (invited) Recent progress on ferroelectric-gate thin film trensistors with oxide channel2010
- Author(s)
  Eisuke Tokumitsu
- Organizer
  International Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies (IUMRS-ICEM 2010)
- Place of Presentation
  Korea International Exhibition Center, GyeongGi-Do, Korea
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate or Flexible IGZO-channel Ferroelectric-gate TFTs2010
- Author(s)
  Gwang-Geun Lee, Sung-Min Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
- Organizer
  2010 Fall meeting, Materials Research Society
- Place of Presentation
  Boston, U. S. A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Preparation of Bi-Zn-Nb-O(BZN) High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors2010
- Author(s)
  Eisuke Tokumitsu, Youhei Kondo, Tomohiro Oiwa
- Organizer
  16th Workshop on Dielectrics in Microelectronics(Wo DiM 2010)
- Place of Presentation
  Blatislava, Slovakia
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors2010
- Author(s)
  Eisuke Tokumitsu, Youhei Kondo, Tomohiro Oiwa
- Organizer
  16th Workshop on Dielectrics in Microelectronics (WoDiM 2010)
- Place of Presentation
  Blatislava, Slovakia
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)2010
- Author(s)
  G.-G. Lee, S.-M. Yoon, J.-W. Yoon, Y. Fujisaki, H. Ishiwara, E. Tokumitsu
- Organizer
  The 17th International DisplayWorkshops(IDW' 10)
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] 液体プロセスによるIn2O3及びIn-Zn-O(IZO)薄膜の形成と酸化物チャネル薄膜トランジスタへの応用2010
- Author(s)
  高橋泰裕、徳光永輔
- Organizer
  薄膜材料デバイス研究会、第7回研究集会、(ポスターセッション)
- Place of Presentation
  奈良100年会館
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Flexible on-volatile memory TFT with IGZO-channel and ferroelectric polymer2010
- Author(s)
  Gwang-Geun Lee、Sung-Min Yoon、Joo-Won Yoon、Yoshihisa Fujisaki、Hiroshi Ishiwara、Eisuke Tokumitsu
- Organizer
  第71回応用物理学会学術講演会、16a-NJ-5、長崎大学文教キャンパス
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process2010
- Author(s)
  Takaaki Miyasako, Bui Nguyen Quoc Trinh, Toshihiko Kaneda, Masatoshi Onoue, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate or Flexible IGZO-channel Ferroelectric-gate TFTs2010
- Author(s)
  Gwang-Geun Lee, Sung-Min Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
- Organizer
  2010 Fall meeting, Materials Research Society
- Place of Presentation
  Boston, U.S.A. 口頭発表
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Recent progress on ferroelectric-gate thin film trensistors with oxide channel2010
- Author(s)
  Eisuke Tokumitsu
- Organizer
  International Conference on Electronic Materials 2010 presented by International Union of Materials Research Societies(IUMRS-ICEM 2010)
- Place of Presentation
  Korea International Exhibition Center, Gyeong Gi-Do, Korea
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] (ポスターセッション)液体プロセスによるIn2O3及びIn-Zn-O(IZO)薄膜の形成と酸化物チャネル薄膜トランジスタへの応用2010
- Author(s)
  高橋泰裕、徳光永輔
- Organizer
  薄膜材料デバイス研究会、第7回研究集会
- Place of Presentation
  奈良100年会館
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer2010
- Author(s)
  Gwang-Geun Lee、Sung-Min Yoon、Joo-Won Yoon、Yoshihisa Fujisaki、Hiroshi Ishiwara、Eisuke Tokumitsu
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] ゾルゲル法による酸化物チャネル薄膜トランジスタの作製2010
- Author(s)
  奥村優作、徳光永輔
- Organizer
  第57回応用物理学関係連合会講演会
- Place of Presentation
  東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of IGZO andIn_2O_3-Channel Ferroelectric-Gate Thin Film Transistors2010
- Author(s)
  Eisuke Tokumitsu, Ken-ichi Haga and Tomohiro Oiwa
- Organizer
  2010 MRS Spring meeting, Materials Research Society
- Place of Presentation
  San Francisco, U. S. A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] スパッタ法によるAl-Zn-Sn-OチャネルTFTの作製2010
- Author(s)
  羽賀健一、徳光永輔
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)2010
- Author(s)
  G.-G.Lee, S.-M.Yoon, J.-W.Yoon, Y.Fujisaki, H.Ishiwara, E.Tokumitsu
- Organizer
  The 17th International Display Workshops(IDW'10)
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] スパッタ法によるAl-Zn-Sn-OチャネルTFTの作製2010
- Author(s)
  羽賀健一、徳光永輔
- Organizer
  薄膜材料デバイス研究会、第7回研究集会、(ポスターセッション)
- Place of Presentation
  奈良100年会館
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process2010
- Author(s)
  Takaaki Miyasako, Bui Nguyen Quoc Trinh, Toshihiko Kaneda, Masatoshi Onoue, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda
- Organizer
  2010 International Conference on Solid-State Devices and Materials
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of In-Ga-Zn-O channel thin transistors with high-k and ferroelectric gate insulators2009
- Author(s)
  E.Tokumitsu, T.Oiwa
- Organizer
  23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANA 23)
- Place of Presentation
  the Netherland
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators2009
- Author(s)
  E. Tokumitsu, T. Oiwa
- Organizer
  23rd International Conference on Amorphous and Nanocrystalline Semiconductors(ICANS 23)
- Place of Presentation
  the Netherland
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] ゾルゲル法によるITO及びIn_2O_3薄膜の形成と酸化物チャネル薄膜トランジスタへの応用2009
- Author(s)
  奥村優作、徳光永輔
- Organizer
  薄膜材料デバイス研究会第六回研究集会、(ポスターセッション)
- Place of Presentation
  京都龍谷大学
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] IGZOおよびIn_2O_3をチャルに用いた強誘電体ゲートTFTの作製2009
- Author(s)
  羽賀健一、大岩朝洋、徳光永輔
- Organizer
  薄膜材料デバイス研究会第六回研究集会
- Place of Presentation
  京都龍谷大学
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film2009
- Author(s)
  Gwang Geun Lee, Sung Min Yoon, Joo Won Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, and Eisuke Tokumitsu
- Organizer
  Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic2009 fall meeting, Materials Research Society
- Place of Presentation
  Boston
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability2009
- Author(s)
  Eisuke Tokumitsu
- Organizer
  2009 MRS Spring meeting, Materials Research Society
- Place of Presentation
  San Francisco, U. S. A.
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P (VDF-TrFE) Film2009
- Author(s)
  GwangGeun Lee, SungMin Yoon, JooWon Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu
- Organizer
  2009 fall meeting, Materials Research Society
- Place of Presentation
  Boston, MA, USA
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode2009
- Author(s)
  Gwang geun Lee、Hoowon Yoon、Yoshihisa Fujisaki、Hiroshi Ishiwara、Eisuke Tokumitsu
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学五福キャンパス
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Recent Progress and Future Prospects of Oxide-channel Ferroelectric-gate Thin Film Transistor with Large Charge Controllability2009
- Author(s)
  (invited) Eisuke Tokumitsu
- Organizer
  2009 MRS Spring meeting, Materials Research Society
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] IGZOおよびIn_2O_3をチャネルに用いた強誘電体ゲートTFTの作製2009
- Author(s)
  羽賀健一、大岩朝洋、徳光永輔
- Organizer
  薄膜材料デバイス研究会第六回研究集会、(ポスターセッション)
- Place of Presentation
  京都龍谷大学
- Data Source
  KAKENHI-PROJECT-21360144
[Presentation] Fabrication of Metal Oxide Thin Films and Transistors by Solution Process
- Author(s)
  Eisuke Tokumitsu and Tatsuya Shimoda
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Kanazawa Bunka Hall, Kanazawa
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Simultaneous formation of channel and source/drain regions by nano-rheology printing in ITO-based thin film transistors
- Author(s)
  T. Kaneda, E. Tokumitsu, T. Miyasako, T. Shimoda
- Organizer
  European Materials Research Society (EMRS) 2015 Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2015-05-11 – 2015-05-15
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Amorphous LaRuO Nano-Patterning Using Rheology Printing Method
- Author(s)
  K. Nagahara, J. Li, D. Hirose, E. Tokumitsu and T. Shimoda
- Organizer
  International Conference on Nanoimprint and Nanoprint Technology (NNT 2014)
- Place of Presentation
  ANA Crown Plaza Kyoto, Kyoto
- Year and Date
  2014-10-22 – 2014-10-24
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Crystallization Mechanism and Crystallographic Orientation Control of (Bi,La)4Ti3O12 (BLT) Films by Sol-gel technique
- Author(s)
  Eisuke Tokumitsu and Ken-ichi Haga
- Organizer
  13th European Meeting on Ferroelectricity
- Place of Presentation
  Porto, Portugal
- Year and Date
  2015-06-28 – 2015-07-03
- Data Source
  KAKENHI-PROJECT-24360119
[Presentation] Novel Materials and Processing for Printed Metal Oxide Devices
- Author(s)
  Jinwang Li, Phan Trong Tue, Yoshitaka Murakami, Tadaoki Mitani, Eisuke Tokumitsu & Tatsuya Shimoda
- Organizer
  European Materials Research Society (EMRS) 2014 Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2014-05-26 – 2014-05-30
- Data Source
  KAKENHI-PROJECT-24360119

1. ISHIWARA Hiroshi (60016657)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
2. AIAWA Kouji (40222450)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. Inoue Satoshi (60553237)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SHIMODA TATSUYA (70447689)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. MASUDA TAKASHI (70643138)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. ASANO Tanemasa (50126306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. YAMAMOTO Shuu'itiro (50313375)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. Kimura Mutsumi (60368032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
10. 澤岡昭 (40029468)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 伊賀健一 (10016785)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 小山二三夫 (30178397)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 下河辺明 (40016796)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 宮本智之 (70282861)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 中村健太郎 (20242315)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 馬場俊彦 (50202271)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 小長井誠 (40111653)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 木村龍平 (80161587)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 中島康彦 (00314170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
20. ZHANG Renyuan (00709131)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 松田時宜 (30389209)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 羽賀健一 (40751920)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
23. 藤村紀文 (50199361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 森田行則 (60358190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
25. 太田裕之 (70356640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
26. 右田真司 (00358079)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
27. KATAHAMA Hisasi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. KIJIMA Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 方浜久

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Tokumitsu Eisuke 徳光 永輔

TOKUMITSU Eisuke 徳光 永輔

徳光 英輔 トクミツ エイスケ

徳光 永輔

Research Projects

Research Products

Co-Researchers

Investigation of steep-slope transistor using ferroelectric polarization dynamicsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Proposal of varialbe-area electrode structure by field effect and its application to variable capacitorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Current control of graphene channel transistors using semiconductor contactsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on lithography-less solution process for nano-devices and its application to nonvolatile memoriesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

強誘電体ゲートを用いた大電流透明薄膜トランジスタの研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

強誘電体を用いた不揮発性多値・アナログメモリの研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuitsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

強誘電体・高誘電率材料・導電性酸化物を用いた新しい集積機能デバイスの研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

強誘電体を用いた金属・導電体中の電荷制御とスイッチング素子への応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

強誘電体・高誘電率材料を用いた機能性デバイスの試作とロジック回路への応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

人工単結晶強誘電体ドットの形成とマイクロキャパシタへの適用Principal Investigator

Principal Investigator

Project Period (FY)

Tokumitsu Eisuke 徳光永輔

TOKUMITSU Eisuke 徳光永輔

徳光英輔トクミツエイスケ

徳光永輔