Matsuda Tokiyoshi 松田時宜

… Alternative Names

松田時宜マツダトキヨシ

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Researcher Number	30389209
Other IDs
External Links
Affiliation (Current)	2022: 近畿大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2019 – 2021: 龍谷大学, 公私立大学の部局等, 研究員 2016 – 2018: 龍谷大学, 革新的材料・プロセス研究センター, 客員研究員 2014 – 2015: 龍谷大学, 理工学部, 助教 2007: Kochi University of Technology, 総合研究所, 助教 2005 – 2006: 高知工科大学, 総合研究所, 助手
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Crystal engineering / Thin film/Surface and interfacial physical properties / Inorganic materials/Physical properties Except Principal Investigator Basic Section 60040:Computer system-related
Keywords	Principal Investigator 格子欠陥 / RFマグネトロンスパッタリング / 薄膜トランジスタ / ミストCVD / レアメタル / 酸化物半導体 / 酸化亜鉛 / 酸化亜鉛・電極界面 / 粒界 / 透明導電膜 … More / ショットキー障壁 / オーミック接触 / プラズマ / 電子スピン共鳴 / 電子スピン共鳴(ESR) / 熱電素子 / フレキシブルデバイス / アモルファス酸化物半導体 / 酸化ガリウムスズ / 電圧ストレス試験 / 低温TFT / 抵抗変化型メモリー / ニューラルネットワーク / 光照射電圧ストレス試験 / 機能性セラミックス材料 / 酸素空孔 / 薄膜デバイス … More Except Principal Investigator アナログデバイス / 局所的学習則 / ニューロモーフィックシステム / スパイキングニューラルネットワーク / メムキャパシタ Less

単一アナログデバイスと局所的学習則を用いるリアルニューロモーフィックシステム
- Principal Investigator
  
  木村睦
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 60040:Computer system-related
- Research Institution
  Nara Institute of Science and Technology
Development of Rare-metal-free Ga-Sn-O electron devices with defect evaluationPrincipal Investigator
- Principal Investigator
  
  Matsuda Tokiyoshi
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Ryukoku University
Lattice defects of multi metal oxide materialsPrincipal Investigator
- Principal Investigator
  
  Matsuda Tokiyoshi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
  Thin film/Surface and interfacial physical properties
- Research Institution
  Ryukoku University
酸化亜鉛薄膜-電極薄膜界面及び酸化鉛薄膜の子欠陥と構造に関する研究Principal Investigator
- Principal Investigator
  
  松田時宜
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kochi University of Technology

All 2021 2020 2019 2018 2017 2016 2015 2014 2008 2007 2006 Other

All Journal Article Presentation

[Journal Article] Memristor property of an amorphous Sn-Ga-O thin-film device deposited using mist chemical-vapor-deposition method2020
- Author(s)
  Takishita Yuta、Kobayashi Masaki、Hattori Kazuki、Matsuda Tokiyoshi、Sugisaki Sumio、Nakashima Yasuhiko、Kimura Mutsumi
- Journal Title
  
  AIP Advances
  
  Volume: 10 Pages: 035112-035112
- DOI
  10.1063/1.5143294
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K11876, KAKENHI-PROJECT-16K06733
[Journal Article] Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect2020
- Author(s)
  Imanishi Kota、Matsuda Tokiyoshi、Kimura Mutsumi
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 41 Pages: 1025-1028
- DOI
  10.1109/led.2020.2993268
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K11876
[Journal Article] Neuromorphic System with Crosspoint-type Amorphous Ga-Sn-O Thin-Film Devices as Self-Plastic Synapse Elements2019
- Author(s)
  Mutsumi Kimura、Kenta Umeda、Keisuke Ikushima、Toshimasa Hori、Ryo Tanaka、Junpei Shimura、Atsushi Kondo、Takumi Tsuno、Sumio Sugisaki、Ayata Kurasaki、Kaito Hashimoto、Tokiyoshi Matsuda、Tokiyoshi Kameda、and Yasuhiko Nakashima
- Journal Title
  
  ECS Trans.
  
  Volume: 90 Pages: 157-166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K11876
[Journal Article] Neuromorphic System with Crosspoint-Type Amorphous Ga-Sn-O Thin-Film Devices as Self-Plastic Synapse Elements2019
- Author(s)
  Kimura Mutsumi、Umeda Kenta、Ikushima Keisuke、Hori Toshimasa、Tanaka Ryo、Shimura Junpei、Kondo Atsushi、Tsuno Takumi、Sugisaki Sumio、Kurasaki Ayata、Hashimoto Kaito、Matsuda Tokiyoshi、Kameda Tomoya、Nakashima Yasuhiko
- Journal Title
  
  ECS Transactions
  
  Volume: 90 Pages: 157-166
- DOI
  10.1149/09001.0157ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] レアメタルフリー Ga-Sn-O 材料の薄膜トランジスタへの応用2019
- Author(s)
  松田時宜、梅田鉄馬、加藤雄太、西本大貴、杉崎澄生、古田守、木村睦
- Journal Title
  
  電子情報通信学会論文誌 C
  
  Volume: J102-C Pages: 305-311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K11876
[Journal Article] Memristive characteristic of an amorphous Ga-Sn-O thin-film device2019
- Author(s)
  Sugisaki Sumio、Matsuda Tokiyoshi、Uenuma Mutsunori、Nabatame Toshihide、Nakashima Yasuhiko、Imai Takahito、Magari Yusaku、Koretomo Daichi、Furuta Mamoru、Kimura Mutsumi
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Pages: 2757-2757
- DOI
  10.1038/s41598-019-39549-9
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06733, KAKENHI-PROJECT-16K06309
[Journal Article] レアメタルフリーGa-Sn-O材料の薄膜トランジスタへの応用2019
- Author(s)
  松田時宜, 梅田鉄馬, 加藤雄太, 西本大貴, 杉崎澄生, 古田守, 木村睦
- Journal Title
  
  電子情報通信学会論文誌 C
  
  Volume: J102-C Pages: 305-311
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density2019
- Author(s)
  Kurasaki、Tanaka、Sugisaki、Matsuda、Koretomo、Magari、Furuta、Kimura
- Journal Title
  
  Materials
  
  Volume: 12 Pages: 3236-3236
- DOI
  10.3390/ma12193236
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K11876, KAKENHI-PROJECT-16K06733
[Journal Article] Research and Applications of Amorphous Metal-Oxide Semiconductor Devices - In-Ga-Zn-O and Ga-Sn-O Thin-Film Devices -2018
- Author(s)
  M. Kimura, T. Kamiya, T. Matsuda, K. Umeda, A. Fukawa, and Y. Nakashima
- Journal Title
  
  SID Symposium Digest of Technical Papers
  
  Volume: 49 Pages: 512-515
- DOI
  10.1002/sdtp.12768
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] Room-temperature fabrication of a Ga-Sn-O thin-film transistor2017
- Author(s)
  Matsuda Tokiyoshi、Takagi Ryo、Umeda Kenta、Kimura Mutsumi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 134 Pages: 19-21
- DOI
  10.1016/j.sse.2017.05.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] Thermoelectric effects of amorphous Ga–Sn–O thin film2017
- Author(s)
  Matsuda Tokiyoshi、Uenuma Mutsunori、Kimura Mutsumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 7 Pages: 070309-070309
- DOI
  10.7567/jjap.56.070309
- NAID
  210000147983
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] Rare-metal-free high-performance Ga-Sn-O thin film transistor2017
- Author(s)
  Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta, and Mutsumi Kimura,
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Pages: 44326-44326
- DOI
  10.1038/srep44326
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26870717, KAKENHI-PROJECT-16K06733, KAKENHI-PROJECT-16K06309
[Journal Article] Thermoelectric effect of Ga-Sn-O thin films2017
- Author(s)
  Tokiyoshi Matsuda, Mutsunori Uenuma, Mutsumi Kimura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16K06733
[Journal Article] Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance2015
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Journal Title
  
  Journal of Vacuum Science and Technology A Letters
  
  Volume: 33
- DOI
  10.1116/1.4904400
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870717
[Journal Article] Thermally enhanced threshold voltage shifts in amorphous In–Ga–Zn–O thin-film transistor2014
- Author(s)
  Takashi Kojiri, Tokiyoshi Matsuda, and Mutsumi Kimura
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 12 Pages: 125802-125802
- DOI
  10.7567/jjap.53.125802
- NAID
  210000144670
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870717
[Journal Article] Influence of amorphous buffer layer on the crystallinity of sputter-deposited undoped ZnO films2008
- Author(s)
  T.Matsuda, M. Furuta, T.Hiramatsu, C.Li, H.Furuta, H.Hokari, T.Hirao
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 31-35
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17760032
[Journal Article] Sheet resistance and crystallinity of Ga and Al implanted zinc oxide (ZnO) thin films with postannealing2007
- Author(s)
  T.Matsuda, M. Furuta, T.Hiramatsu, H. Furuta, T. Hirao
- Journal Title
  
  Journal of Vacuum Science and Technology A 25
  
  Pages: 706-710
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17760032
[Journal Article] ZnO材料に関するこれまでの研究・応用例2006
- Author(s)
  松田時宜, 平尾孝, 古田守, 古田寛
- Journal Title
  
  マテリアルインテグレーション 10
  
  Pages: 6-6
- Data Source
  KAKENHI-PROJECT-17760032
[Journal Article] ZnO-TFTの開発と液晶ディスプレイへの応用2006
- Author(s)
  古田守, 古田寛, 松田時宜, 平尾孝, 平松孝浩, 保苅一志, 吉田基彦
- Journal Title
  
  マテリアルインテグレーション 10
  
  Pages: 10-10
- Data Source
  KAKENHI-PROJECT-17760032
[Presentation] GTO-TFT deposited using Mist-CVD2021
- Author(s)
  Mutsumi Kimura, Yuta Takishita, Ryugo Okamoto, and Tokiyoshi Matsuda
- Organizer
  ICDT 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] ミスト CVD法によるニューロモルフィックアプリケション用Gax-Sn1-x-O / Gax-Al1-x-Oデバイスのメモリスタ特性2021
- Author(s)
  杉崎澄生, 伊藤良, 松田時宜, 木村睦
- Organizer
  薄膜材料デバイス研究会第18回研究集会
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] GTO-TFT deposited using Mist-CVD2021
- Author(s)
  Mutsumi Kimura, Yuta Takishita, Ryugo Okamoto, and Tokiyoshi Matsuda
- Organizer
  ICDT 2021, May 2021, to be presented
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] ミスト CVD 法を用いた Gax-Sn1-x-O/Ga-Ox 薄膜デバイスのメモリスタ特性2020
- Author(s)
  杉崎澄生, 倉﨑彩太, 荒牧達也, 松田時宜, 木村睦
- Organizer
  薄膜材料デバイス研究会第17回研究集会, pp. 59-62, 2020年11月
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] GTO TFT, Memristor, Thermoelectric Device, Neuromorphic System, etc.2020
- Author(s)
  Mutsumi Kimura, Tokiyoshi Matsuda, Sumio Sugisaki, Ayata Kurasaki, and Isao Horiuchi
- Organizer
  ICDT 2020, Oct. 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] Neuro-inspired System with Crossbar Array of Amorphous Metal-Oxide-Semiconductor Thin-Film Devices as Self-Plastic Synapse Units － Letter Recognition of Five Alphabets －2019
- Author(s)
  Mutsumi Kimura, Kenta Umeda, Keisuke Ikushima, Toshimasa Hori, Ryo Tanaka, Tokiyoshi Matsuda, Tomoya Kameda, and Yasuhiko Nakashima
- Organizer
  The 26th International Conference on Neural Information Processing, ICONIP 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method2019
- Author(s)
  T Aramaki, T Matsuda, K Umeda, M Uenuma, M Kimura
- Organizer
  AM-FPD, 2019
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Development of Two-Layered ReRAM using Ga-Sn-O Thin Film2019
- Author(s)
  Ayata Kurasaki, Sumio Sugisaki, Ryo Tanaka, Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  AM-FPD '19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] In-Ga-Zn-O Film Thickness Dependence of Memristor Characteristic for Resistive Random Access Memory2019
- Author(s)
  Kaito Hashimoto, Ayata Kurasaki, Mutsumi Kimura, and Tokiyoshi Matsuda
- Organizer
  IMFEDK 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K11876
[Presentation] Development of two-layered ReRAM using Ga-Sn-O thin film2019
- Author(s)
  A Kurasaki, S Sugiski, R Tanaka, T Matsuda, M Kimura
- Organizer
  AM-FPD, 2019
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method2018
- Author(s)
  T. Aramaki, R. Nomura, T. Matsuda, M. Kimura, K. Umeda, M. Uenuma, and Y. Uraoka
- Organizer
  2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Characteristic Analysis of Ga-Sn-O TFT Subjected to UV Annealing Treatment2018
- Author(s)
  K. Tanino, R. Takagi, M. Kimura, and T. Matsuda
- Organizer
  2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Evaluation of GTO Film Deposited Using mist CVD Method2018
- Author(s)
  Y. Takishita, R. Okamoto, M. Kimura, and T. Matsuda
- Organizer
  2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Room Temperature Fabrication of Variable Resistive Memory Using Ga-Sn-O Thin Film2018
- Author(s)
  S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, and M. Kimura
- Organizer
  2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Rare-metal-free high-performance Ga-Sn-O thin film transistor2017
- Author(s)
  T. Matsuda, K. Umeda, M. Kimura
- Organizer
  9th World Congress of Materials Science and Engineering, June 12-14, 2017 Rome, Italy (June 14, Wed., 11:35-11:50, 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] 酸化物半導体の研究開発と電子デバイスへの新規応用2017
- Author(s)
  木村睦、松田時宜
- Organizer
  第2回 NEDIA DAY 関西
- Place of Presentation
  龍谷大学アバンティ響都ホール校友会館
- Invited
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Rare-metal-free high-performance Ga-Sn-O thin film transistor2017
- Author(s)
  Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta, and Mutsumi Kimura
- Organizer
  9th World Congress on Materials Science and Engineering
- Place of Presentation
  Rome, Italia
- Year and Date
  2017-06-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] レアメタルフリー酸化物半導体薄膜トランジスタ2017
- Author(s)
  木村睦、松田時宜
- Organizer
  JST新技術説明会
- Place of Presentation
  機械振興会館
- Invited
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] 高性能レアメタルフリーGa-Sn-O薄膜トランジスタ2017
- Author(s)
  梅田鉄馬、松田時宜、木村睦
- Organizer
  応用物理学会第64回春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] 高性能レアメタルフリーGa-Sn-O薄膜トランジスタ2017
- Author(s)
  梅田鉄馬、松田時宜、木村睦
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Relationships between the Defects and Electrical Properties of Oxide Semiconductor2016
- Author(s)
  Tokiyoshi Matsuda and Mutsumi Kimura
- Organizer
  Emerging Technologies Communications Microsystems Optoelectronics Sensors
- Place of Presentation
  Montreal, Canada
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] 新規レアメタルフリーAOS-TFTの研究開発2016
- Author(s)
  梅田鉄馬, 加藤雄太, 西本大樹, 松田時宜, 木村睦
- Organizer
  電子情報通信学会 SDM EID
- Place of Presentation
  奈良先端科学技術大学院大学
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Evaluation and Development of new oxide semiconductor2016
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  Energy Materials and Nanotechnology
- Place of Presentation
  Prague, Chech
- Year and Date
  2016-06-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Evaluation of Ga-Sn-O Films fabricatted using Mist Chemical Vapor Deposition2016
- Author(s)
  Hiroki Fukushima, Masahiro Yuge, Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kyoto, japan
- Year and Date
  2016-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] ミストCVD法で作製したGaSnO薄膜の特性評価2016
- Author(s)
  福嶋大貴, 弓削政博, 木村睦, 松田時宜
- Organizer
  電子情報通信学会 EID SDM
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2016-12-12
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Characteristic Evaluation of Ga-Sn-O Thin Films fabricated using RF Magnetron Sputtering2016
- Author(s)
  Kenta Umeda, Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, and Mutsumi, Kimura
- Organizer
  2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), (2016)
- Place of Presentation
  龍谷大学アバンティ響都ホール校友会館
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Evaluation and Development of New Oxide Semiconductor2016
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  Energy Materials and Nanotechnology (EMN Prague)
- Place of Presentation
  Prague, Czech Republic
- Year and Date
  2016-06-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Evaluation and Development of New Oxide Semiconductor2016
- Author(s)
  Tokiyoshi Matsuda and Mutsumi Kimura
- Organizer
  Energy Materials and Nanotechnology (EMN Prague)
- Place of Presentation
  Prague, Czech
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] ミストCVD法で作製したGaSnO薄膜の特性評価2016
- Author(s)
  福嶋大貴, 弓削政博, 木村睦, 松田時宜
- Organizer
  電子情報通信学会 SDM EID
- Place of Presentation
  奈良先端科学技術大学院大学
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] 新規レアメタルフリーAOS-TFTの研究開発2016
- Author(s)
  梅田鉄馬・加藤雄太・西本大樹・松田時宜・木村　睦
- Organizer
  電子情報通信学会 EID SDM
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2016-12-12
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Evaluation of Defects in Oxide Semiconductors using Electron Spin Resonance (ESR)2016
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  2016 International Symposium for Advanced Materials Research (ISAMR 2016)
- Place of Presentation
  Sun Moon Lake, Taiwan
- Year and Date
  2016-08-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Evaluation of Defects in Oxide Semiconductors using Electron Spin Resonance (ESR)2016
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  2016 International Symposium for Advanced Materials Research (ISAMR 2016) Sun Moon Lake, Taiwan, August 13, 10:40-11:10, No. 3, p. 14.
- Place of Presentation
  Sun Moon Lake, Taiwan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06733
[Presentation] Relationships between the Defects and Electrical Properties of Oxide Semiconductor2016
- Author(s)
  Tokiyoshi Matsuda and Mutsumi Kimura
- Organizer
  2016 Emerging Technologies Communications Microsystems Optoelectronics Sensors (2016 ET CMOS)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2016-05-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Development and Evaluation of New oxide semiconductor2016
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  Annual World Congress of Smart Materials (WCSM 2016)
- Place of Presentation
  Singapore, Singapore
- Year and Date
  2016-03-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Characteristic Evaluation of Ga-Sn-O Thin Films fabricated using RF Magnetron Sputtering2016
- Author(s)
  Kenta Umeda, Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, and Mutsumi, Kimura
- Organizer
  2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2016-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] ミストCVD法によるGaxSn1-xO薄膜の特性評価2015
- Author(s)
  弓削政博, 小川淳史, 吉岡敏博, 加藤雄太, 松田時宜, 木村睦
- Organizer
  EID2015-15, SDM2015-98
- Place of Presentation
  京都, 日本
- Year and Date
  2015-12-14
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] SID'15 Display Week 2015 報告(AMDセッション)2015
- Author(s)
  松田時宜
- Organizer
  SID報告会 2015
- Place of Presentation
  機械振興会館東京
- Year and Date
  2015-07-28
- Invited
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] RFマグネトロンスパッタリング法によるIn2O3薄膜の特性評価2015
- Author(s)
  吉岡敏博, 小川淳史, 弓削政博, 松田時宜, 木村睦
- Organizer
  EID2015-15, SDM2015-98
- Place of Presentation
  京都, 日本
- Year and Date
  2015-12-14
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] SID'15 Display week 2015報告 (AMD関連)2015
- Author(s)
  松田時宜
- Organizer
  SID日本支部SID報告会
- Place of Presentation
  東京, 日本
- Year and Date
  2015-07-28
- Invited
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Paramagnetic Defects in Oxide Semiconductor Films Deposited by RF Magnetron Sputtering (RFマグネトロンスパッタリング法によって成膜された酸化物半導体薄膜中に導入された常磁性欠陥)2015
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  EMS-34
- Place of Presentation
  滋賀, 日本
- Year and Date
  2015-07-16
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Comparison of Defects in Oxide Semiconductor Evaluated by ESR2015
- Author(s)
  Tokiyoshi Matsuda, and Mutsumi Kimura
- Organizer
  Energy Materials and Nanotechnology Meeting (EMN Qingdao)
- Place of Presentation
  Qingdao, China
- Year and Date
  2015-06-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] SnO2/Al2O3薄膜の特性評価と薄膜トランジスタの評価2015
- Author(s)
  小川淳史, 弓削政博, 吉岡敏博, 松田時宜, 木村睦
- Organizer
  EID2015-15, SDM2015-98
- Place of Presentation
  京都, 日本
- Year and Date
  2015-12-14
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition2015
- Author(s)
  Tokiyoshi Matsuda
- Organizer
  International Conference on Small Science (ICSS 2015)
- Place of Presentation
  Phuket, Thailand
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] a-IGZO薄膜における連続電圧印加が与える影響2015
- Author(s)
  古我祐貴, 松田時宜, 木村睦
- Organizer
  第12回薄膜材料デバイス研究会
- Place of Presentation
  京都, 日本
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] 薄膜フォトトランジスタの光誘起電流のチャネル形状に対する依存性―デバイスシミュレーションによる解析―2015
- Author(s)
  田中匠, 門目尭之, 渕矢剛宏, 春木翔太, 松田時宜, 木村睦
- Organizer
  第12回薄膜材料デバイス研究会
- Place of Presentation
  京都, 日本
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] 新規酸化物半導体TFTの形成及び評価2015
- Author(s)
  松田時宜、木村睦
- Organizer
  酸化物半導体討論会
- Place of Presentation
  東京工業大学東京
- Year and Date
  2015-05-18
- Invited
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] ミストCVD法による薄膜の特性評価2015
- Author(s)
  弓削政博　小川淳史　吉岡敏博　松田時宜　木村睦
- Organizer
  応用物理学会関西支部2014年度第3回講演会「関西発グリーンエレクトロニクス研究の進展」
- Place of Presentation
  奈良先端科学技術大学院大学
- Year and Date
  2015-02-27
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] IGZO薄膜に対する成膜条件による影響2014
- Author(s)
  西野克弥、高橋宏太、松田時宜、木村　睦
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM) 電子ディスプレイ研究会（EID）
- Place of Presentation
  京都大学桂キャンパス A1, 京都
- Year and Date
  2014-12-12
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Low Temperature ZnO TFT Fabricated on SiOx Insulator Deposited by Facing Electrodes Chemical Vapor Deposition2014
- Author(s)
  Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Mutsumi Kmura, and Takashi Hirao
- Organizer
  ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, TFT TECHNOLOGIES AND FPD MATERIALS- (AM-FPD 14)
- Place of Presentation
  龍谷大学アバンティ響都ホール校友会館, 京都
- Year and Date
  2014-07-03
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] GaSnO薄膜の特性評価2014
- Author(s)
  加藤雄太、西本大樹、松田時宜、木村　睦
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM) 電子ディスプレイ研究会（EID）
- Place of Presentation
  京都大学桂キャンパス A1, 京都
- Year and Date
  2014-12-12
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Comparison of Defects in Crystalline Oxide Semiconductor Materials by Electron Spin Resonance2014
- Author(s)
  Tokiyoshi Matsuda and Mutsumi Kimura
- Organizer
  ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, TFT TECHNOLOGIES AND FPD MATERIALS- (AM-FPD 14)
- Place of Presentation
  龍谷大学アバンティ響都ホール校友会館, 京都
- Year and Date
  2014-07-03
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Electrical Properties of ion implanted ZnO thin film for source and drain regions of ZnO-TFTs.2007
- Author(s)
  T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, and T. Hirao
- Organizer
  International Display Workshop'07
- Place of Presentation
  北海道
- Year and Date
  2007-12-06
- Data Source
  KAKENHI-PROJECT-17760032
[Presentation] Paramagnetic Defects in Oxide Semiconductor Films Deposited by RF Magnetron Sputtering
- Author(s)
  松田時宜、木村睦
- Organizer
  第34回電子材料シンポジウム (EMS)
- Place of Presentation
  ラフォーレ琵琶湖、滋賀
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] Comparison of Defects in Oxide Semiconductor Evaluated by ESR
- Author(s)
  Tokiyoshi Matsuda and Mutsumi Kimura
- Organizer
  Energy Materials and Nanotechnology Qingdao Meeting
- Place of Presentation
  Grand Regency Hotel, Qingdao, China
- Year and Date
  2015-06-15 – 2015-06-17
- Invited
- Data Source
  KAKENHI-PROJECT-26870717
[Presentation] 酸化物半導体を用いた電子デバイスとその応用
- Author(s)
  松田時宜、木村睦
- Organizer
  京都産学公連携フォーラム 2015
- Place of Presentation
  京都パルスプラザ, 京都
- Year and Date
  2015-02-17 – 2015-02-18
- Invited
- Data Source
  KAKENHI-PROJECT-26870717

1. 木村睦 (60368032)

# of Collaborated Projects: 3 results

# of Collaborated Products: 66 results
2. 中島康彦 (00314170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. ZHANG Renyuan (00709131)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 羽賀健一 (40751920)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 徳光永輔 (10197882)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. FURUTA Mamoru

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results

Matsuda Tokiyoshi 松田 時宜

松田 時宜 マツダ トキヨシ

Research Projects

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Co-Researchers

単一アナログデバイスと局所的学習則を用いるリアルニューロモーフィックシステム

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Development of Rare-metal-free Ga-Sn-O electron devices with defect evaluationPrincipal Investigator

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Lattice defects of multi metal oxide materialsPrincipal Investigator

Principal Investigator

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酸化亜鉛薄膜-電極薄膜界面及び酸化鉛薄膜の子欠陥と構造に関する研究Principal Investigator

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[Journal Article] Memristor property of an amorphous Sn-Ga-O thin-film device deposited using mist chemical-vapor-deposition method2020

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[Journal Article] Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect2020

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[Journal Article] Neuromorphic System with Crosspoint-type Amorphous Ga-Sn-O Thin-Film Devices as Self-Plastic Synapse Elements2019

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[Journal Article] Neuromorphic System with Crosspoint-Type Amorphous Ga-Sn-O Thin-Film Devices as Self-Plastic Synapse Elements2019

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[Journal Article] レアメタルフリー Ga-Sn-O 材料の薄膜トランジスタへの応用2019

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[Journal Article] Memristive characteristic of an amorphous Ga-Sn-O thin-film device2019

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[Journal Article] レアメタルフリーGa-Sn-O材料の薄膜トランジスタへの応用2019

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[Journal Article] Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density2019

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[Journal Article] Research and Applications of Amorphous Metal-Oxide Semiconductor Devices - In-Ga-Zn-O and Ga-Sn-O Thin-Film Devices -2018

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[Journal Article] Room-temperature fabrication of a Ga-Sn-O thin-film transistor2017

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[Journal Article] Thermoelectric effects of amorphous Ga–Sn–O thin film2017

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DOI

Matsuda Tokiyoshi 松田時宜

松田時宜マツダトキヨシ