UCHIDA Hideo 内田秀雄

… Alternative Names

内田秀雄ウチダヒデオ

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Researcher Number	10293739
Other IDs
Affiliation (Current)	2025: 中部大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2002: 名古屋工業大学, 工学部・電気情報工学科, 助手 1998 – 2000: 名古屋工業大学, 工学部, 助手
Review Section/Research Field	Except Principal Investigator 電子デバイス・機器工学
Keywords	Except Principal Investigator SOI / 不純物拡散 / new donor / buried oxide / 埋込酸化膜 / プロセスシミュレータ / 埋込み酸化膜 / 極薄SOI / シリコンLSI / プロセスシミュレーション … More / pair diffusion model / process simulator / recombination velocity of point defect density / carrier density distribution / μ-PCD method / SOI substrate / アンチモン / ひ素 / ニュードナー / 耐圧 / 界面電荷密度 / キャリア分布 / 拡散モデル / P拡散 / B拡散 / 発生ライフタイム / 界面再結合速度 / 対拡散モデル / 点欠陥再結合速度 / キャリア濃度分布 / μ-PCD法 / 埋め込み酸化膜 / SOI基板 / process simulation / impurity diffusion / spreading resistance / carrier concentration / active layer / ultra thin SOI / silicon LSI / シミュレーションモデル / 低消費電力LSI / LSI / 格子間Si / シュミレーションモデル / シリコン / 拡がり抵抗法 / キャリア濃度 / 活性層 / 拡がり抵抗測定 Less

Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIs
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology
ナノメータLSI用離散的拡散シミュレーション技術の研究
- Principal Investigator
  
  ICHIMURA Masaya
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya Institute of Technology
Modeling of Impurity Diffusion in SOI Substrates for Future LSIs
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology

All 2003 2002

All Journal Article

[Journal Article] Sb Pile-up at Oxide and Si Interface during Drive-in Process after Predeposition Using Doped Oxide Source2003
- Author(s)
  T.Ichino, H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1139-1144
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- NAID
  80015914766
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusin Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulaor2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulator2002
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structvires and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- NAID
  110006341535
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323

1. ICHIMURA Masaya (30203110)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
2. ARAI Eisuke (90283473)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
3. SHAO Chunlin (20242828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YOSHIDA Masayuki (80038984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. KATO Masashi (80362317)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

UCHIDA Hideo 内田 秀雄

内田 秀雄 ウチダ ヒデオ

Research Projects

Research Products

Co-Researchers

Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

ナノメータLSI用離散的拡散シミュレーション技術の研究

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Modeling of Impurity Diffusion in SOI Substrates for Future LSIs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Sb Pile-up at Oxide and Si Interface during Drive-in Process after Predeposition Using Doped Oxide Source2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator2003

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusin Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulaor2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulator2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structvires and Their Relation to Crystalline Quality2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality2002

Author(s)

Journal Title

NAID

Description

Data Source

UCHIDA Hideo 内田秀雄

内田秀雄ウチダヒデオ