ARIMA Yutaka 有馬裕

Researcher Number	10325582
Other IDs
Affiliation (based on the past Project Information) *help	2022: 九州工業大学, 産学イノベーションセンター, 教授 2010 – 2022: 九州工業大学, マイクロ化総合技術センター, 教授 2020: 九州工業大学, オープンイノベーション推進機構, 教授 2006 – 2007: 九州工業大学, マイクロ化総合技術センター, 教授 2005: 九州工業大学, マイクロ化総合技術センター, 助教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / General applied physics / Applied physics, general
Keywords	Principal Investigator 電子デバイス・機器 / シリコンスルーホール / イメージセンサー / レンズレス / シリコンスルーホールチップ / レンズレスイメージセンサー / 三次元センサー、ステレオ視 / 電子デバイス・集積回路 / 透明版 / 距離拡張 … More / 距離補完 / シングルチップ / LSI / 距離センサー / 検知距離シフト / 画像シフト / 透明板 / ステレオ視 / 三次元距離センサー / Light interface / Self-reliance type LSI / Power supply by the light / Non-wiring / Light drive LSI / 光インターフェース / 自律型LSI / 光発電 / 非接触 / 光駆動 / 三次元 / 動き / センサー / 集積回路 … More Except Principal Investigator X線CT / 低被曝線量 / X線センサー / フォトンカウンティング / シリコンフォトダイオード / ダイナミックレンジ / トレンチダイオード / 単一X線光子計測 / フォトンカウンタ / 単一光子計測 / 半導体 / フォトダイオード / シリコン / センサー / 光子 / X線 / 側面X線検出 / 直接変換型X線センサ / 半導体デバイス / トレンチ構造型フォトダイオード / カラー分離 / 側面照射 / 色分離 / カラーセンサ / カラーフィルタ無し / カラー撮影 / カラーフィルタなし / MEMS / 側面光照射 / カラー撮像 / イメージセンサ Less

Lensless image sensor using silicon through-hole array chipPrincipal Investigator
- Principal Investigator
  
  Arima Yutaka
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kyushu Institute of Technology
Development of a New Silicon X-ray Sensor with Both Wide Dynamic Range and High Sensitivity
- Principal Investigator
  
  Ariyoshi Tetsuya
- Project Period (FY)
  2018 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Fukuoka Institute of Technology
  Kyushu Institute of Technology
Detection range extension method for single-chip stereo vision range sensor LSI.Principal Investigator
- Principal Investigator
  
  ARIMA YUTAKA
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu Institute of Technology
Research of high sensitivity X-ray sensor for low radiation dose X-ray CT using side X-ray irradiation method
- Principal Investigator
  
  Ariyoshi Tetsuya
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  General applied physics
- Research Institution
  Kyushu Institute of Technology
A study of motion sensor LSI to realize non-contact interfacePrincipal Investigator
- Principal Investigator
  
  ARIMA Yutaka
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu Institute of Technology
Research on side-illuminated color photosensor
- Principal Investigator
  
  ARIYOSHI Tetsuya
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied physics, general
- Research Institution
  Kyushu Institute of Technology
Element technology of LSI driven by light to realize the self-reliance type LSI that is a power supply-free non-wiringPrincipal Investigator
- Principal Investigator
  
  ARIMA Yutaka
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu Institute of Technology

All 2022 2018 2017 2016 2013 2012 2006

All Journal Article Presentation Patent

[Journal Article] Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes2018
- Author(s)
  Tetsuya Ariyoshi, Jumpei Iwasa, Yuta Takane, Kenji Sakamoto, Akiyoshi Baba, and Yutaka Arima
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 15 Issue: 11 Pages: 20180177-20180177
- DOI
  10.1587/elex.15.20180177
- NAID
  130007395665
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04285
[Journal Article] X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor2017
- Author(s)
  T. Ariyoshi, S. Funaki, K. Sakamoto, A. Baba, and Y. Arima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CH06-04CH06
- DOI
  10.7567/jjap.56.04ch06
- NAID
  210000147620
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26390104
[Journal Article] Side-Illuminated Color Photosensor2013
- Author(s)
  T.Ariyoshi,A.Baba,Y.Arima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52(2013) Issue: 4S Pages: 04CE10-04CE10
- DOI
  10.7567/jjap.52.04ce10
- NAID
  210000142040
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560053
[Journal Article] On-chip solar battery structure for CMOS LSI2006
- Author(s)
  Y.Arima, M.Ehara
- Journal Title
  
  IEICE Electronics Express Vol.3 No.13
  
  Pages: 287-291
- NAID
  130000088258
- Data Source
  KAKENHI-PROJECT-17560311
[Journal Article] On-chip solar battery structure for CMOS LSI2006
- Author(s)
  Yutaka, Arima, Masaya, Ehara
- Journal Title
  
  IEICE Electronics Express Vol.3, No.13
  
  Pages: 287-29
- NAID
  130000088258
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560311
[Journal Article] On-chip solar battery structure for COMS LSI2006
- Author(s)
  Y. Arima, M. Ehara
- Journal Title
  
  IEICE Electronics Express Vol.3No.13
  
  Pages: 287-291
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560311
[Patent] 画像センサ装置2022
- Inventor(s)
  有馬裕
- Industrial Property Rights Holder
  九州工業大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-008015
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20K04621
[Patent] 三次元距離センサー装置2016
- Inventor(s)
  有馬裕
- Industrial Property Rights Holder
  国立大学法人九州工業大学
- Industrial Property Rights Type
  特許
- Filing Date
  2016
- Acquisition Date
  2019
- Data Source
  KAKENHI-PROJECT-16K06302
[Presentation] Sensitivity Properties of a Direct Conversion Silicon X-ray Sensor with Trench-Structured Photodiodes2016
- Author(s)
  T.Ariyoshi, S.Funaki, K.Sakamoto, A.Baba, and Y.Arima
- Organizer
  2016 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390104
[Presentation] Side-Illuminated Color Photo Sensor2012
- Author(s)
  T.Ariyoshi, A.Baba, Y.Arima
- Organizer
  International Conference on Solid State Device and Materials
- Place of Presentation
  京都国際会館(京都市)
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-22560053

1. ARIYOSHI Tetsuya (60432738)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
2. BABA Akiyoshi (80304872)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
3. 坂本憲児 (10379290)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ARIMA Yutaka 有馬 裕

Research Projects

Research Products

Co-Researchers

Lensless image sensor using silicon through-hole array chipPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of a New Silicon X-ray Sensor with Both Wide Dynamic Range and High Sensitivity

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Detection range extension method for single-chip stereo vision range sensor LSI.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research of high sensitivity X-ray sensor for low radiation dose X-ray CT using side X-ray irradiation method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A study of motion sensor LSI to realize non-contact interfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on side-illuminated color photosensor

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Element technology of LSI driven by light to realize the self-reliance type LSI that is a power supply-free non-wiringPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes2018

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Journal Article] X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor2017

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Side-Illuminated Color Photosensor2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] On-chip solar battery structure for CMOS LSI2006

Author(s)

Journal Title

NAID

Data Source

[Journal Article] On-chip solar battery structure for CMOS LSI2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] On-chip solar battery structure for COMS LSI2006

Author(s)

Journal Title

ARIMA Yutaka 有馬裕