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MORIMOTO Akihiro  森本 明大

ORCIDConnect your ORCID iD *help
Researcher Number 10359557
Affiliation (based on the past Project Information) *help 2003 – 2004: 東北大学, 未来科学技術共同研究センター, 助手
Review Section/Research Field
Except Principal Investigator
Electronic materials/Electric materials
Keywords
Except Principal Investigator
SiC / epitaxial groth / low temperature process / carbon remaining / MOS structure / insulator film / microwave excited plasma / スパッタ成膜 / ラジカル酸化 / プロセス低温化 … More / エピタキシャル成長 / 低温プロセス / 残留炭素 / MOS / 絶縁膜 / シリコンカーバイト(SiC) / マイクロ波励起プラズマ Less
  • Research Projects

    (1 results)
  • Co-Researchers

    (2 People)
  •  High Voltage SiC Power Transistor having High Quality Gate Insulator Formed by Microwave Excited Plasma

    • Principal Investigator
      TERAMOTO Akinobu
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University
  • 1.  TERAMOTO Akinobu (80359554)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 2.  OHMI Tadahiro (20016463)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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