OHMI Tadahiro 大見忠弘

Researcher Number	20016463
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Affiliation (based on the past Project Information) *help	2011 – 2014: 東北大学, 未来科学技術共同研究センター, 名誉教授 2010: 東北大学, 未来科学技術共同研究センター, 教授 2006 – 2008: 東北大学, 未来科学技術共同研究センター, 教授 1998 – 2004: Tohoku University, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 2002: 東北大学, 未来科学技術共同研究センター, 客員教授 … More 2000: 未来科学技術共同研究センター, 教授 1997: 東北大学, 大学院・工学研究科, 教授 1987 – 1997: 東北大学, 工学部, 教授 1986: Professor, Faculty of Engineering, Tohoku University, 工学部, 教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子材料工学 / Science and Engineering / Engineering / Science and Engineering / 電子デバイス・機器工学 Except Principal Investigator Electronic materials/Electric materials / 電子材料工学 / 電子デバイス・機器工学 / Electronic materials/Electric materials / 複合化集積システム / Science and Engineering
Keywords	Principal Investigator LSI / SOI / 超高速LSI / 銅配線 / 知的電子システム / 低エネルギイオン照射 / プラズマプロセス / MOSFET / スパッタリング / 1 … More / BED / CVD / システムオンチップ / 陽極化成 / 気体分離配線 / microwave plasma / マイクロ波プラズマ / プロセス / 半導体プロセス / シリコン集積回路 / GSI / CMOS / 金属基板 / 超高密度LSI / 半導体製造プロセス / シリコン / 酸化 / 半導体 / 半導体製造装置 / 超LSI / 低温プロセス / Ultralarge scale integration / Aluminum interconnect / Copper interconnect / Low energy ion bombardment / Silicon epitaxy / Low temperature processing / Sputtering / 薄膜形成 / 二周波励起 / RFバイアス / 静電チャック / エピタキシャルシリコン / 低温エピタキシャル成長 / Al配線 / Cu配線 / シリコンエピタキシャル成長 / SPUTTERING / COPPER METALLIZATION / ALUMINUM METALLIZATION / INTERCONNECTS / ULTRA HIGH SPEED LSI / ショットキダイオード / スパッタ成膜 / 金属薄膜のエピタキシャル成長 / エピタキシャル成長 / アルミニウム配線 / LSI用配線技術 / Copper / Aluminum / Very large scale Integration / Interconnect / 銅薄膜 / アルミニウム薄膜 / バイアススパッタ / 純金属配線 / Microwave-excited high-density plasma / Channel mobility / System LSI / Room Temperature 5 step Cleaning / f noise / Balanced-CMOS / Si_3N_4 gate insulator / Si(110)surface / Si(110) / マイクロ波励起高密度プラズマ / チャネル移動度 / システムLSI / 室温5工程洗浄 / fノイズ / Balanced-CMOS集積回路 / Si_3N_4ゲート絶縁膜 / Si(110)面 / back pump / gas distribution system / plasma process / step-by-step investment / profitable mini-line / エッチング / 半導体生産 / クラスターツール / シャワープレート / RLSA / バックポンプ / ガス供給システム / 段階投資 / 小規模生産ライン / low frequency noise / trap level / interface / mutual conductance / gas-isolated-interconnects / Ta metal gate / 無水HF / BPSG / 低周波ノイズ / トラップ準位 / 界面 / FD-SOI MOSFET / 相互コンダクタンス / Ta メタルゲート / LSI Design / Real-Time Processing / Face Recognition / Image Compression / Codebook Spectrum / Vector Quantization / チャネル多重 / 話者認識 / 顔認識 / パケットSS-CDMA方式 / 近似同期CDMA方式 / フレキシブルワイヤレスネットワーク / 高精細静止画像圧縮 / 高精度トランジスタモデリング / SS-CDMAフレキシブルワイヤレスネットワーク / 高速情報処理 / LSI設計 / 実時間処理 / 顔画像認識 / 画像圧縮 / コードブック空間情報処理 / ベクトル量子化 / System on a Chip / Real-Time Processing System / Intelligent Electronic System / Image Information Processing / システムオンチッ / 電子デバイス・機器 / 超高速情報処理 / 知的情報処理 / 瞬時処理システム / 画像情報処理 / metal-substrate SOI / high-permittivity gate insulator / metal gate / gas isolated interconnect / エピタキシャル / 多孔質シリコン / シリサイド反応 / Xeプラズマ / ウルトラクリーンプロセス / 金属基板SOI / radial line slot antenna / nitridation / oxidation / electronic system / magnetron plasma / ultra clean / semiconductor processing / 高品質薄膜形成 / コンタミネーションフリー / 平行平板プラズマ / ラジアルラインスロットアンテナ / 窒化 / 電子システム / マグネトロンプラズマ / ウルトラクリーン / Tantalum / Amorphous silicon / Interconnection / Antifuse / High speed programming / Current-Drive Silicidation / 超高速書き込み / タンタル / アモルファスシリコン / 配線接続 / アンチヒューズ / 超高速書込み / 電流駆動シリサイド化反応 / Ultimate Material and Process / Intelligent Information Processing / Silicon Integrated Circuits / Intelligent electronic systems / 材料 / デバイス / 回路 / 集積回路 / シリコンテクノロジー / システム / マイクロエレクトロニクス / アーキテクチャ / 極限材料・プロセス / 知能情報処理 / NEURON-MOS / LOW POWER / INTELLIGENT ELECTRONIC SYSTEM / FOUR-TERMINAL DEVICE / 重心検出 / 動きベクトル検出 / ニューロンMOS / 低消費電力 / 四端子デバイス / threshold voltage / SOI MOSFET / copper interconnect / contact resistance / metal-substrate / high-permittivity gate-insulator / metal-gate / イオンビームミキシング / コンタクト / 高誘電体膜 / メタルゲートMOS / タンタルゲート / 低抵抗コンタクト / 高誘電率絶縁膜 / メタルゲート / SOIデバイス / 閾値 / SOIMOSEFT / コンタクト抵抗 / 高誘電率ゲート絶縁膜 / メタルゲート電極 / Self-Aligne Metal-Gate Mosfet / Ion Implantation / H_2-Plasma Cleaning / Low-Energy Ion Bombardment / Ultra Clean Technology / Metal-Silicon Contact / Low Temperature Processing / Ultra-High Speed Integrated Circuit / アウトガスフリ-レジストプロセス / 低エネルギイオンエッチング / 金属・半導体接合 / 自己整合金属ゲ-トMOSFET / ウルトラクリ-ンイオン注入 / NON ALLOYING CONTACT / 低エネルギイオン照射プロセス / エレクトロマイグレ-ション / 超高速配線 / Cu配線技術 / イオン注入層低温アニ-ル / メタルゲ-ト自己整合MOSFET / 3次元構造 / シリサイド / ラフネス / 面方位 / シリコン表面平坦化 / MOSトランジスタ / 半導体製造工学 / 半導体電子工学 / 集積化 / 知能エレクトロニクス / 水素ラジカル / 半導体プロセス装置 / ウルトラクリーンシステム / DRAMメモリセル / 超高真空技術 / プロセス装置技術 / 二周波励起プラズマ / 完全自動化ライン / ゲート酸化 / 静電気障害 / イオン注入 / ドライプロセス … More Except Principal Investigator ニューロンMOSトランジスタ / スパッタ成膜 / SiC / STNO / SOI / microwave plasma / ラジアルラインスロットアンテナ / シリコン窒化膜 / 強誘電体 / マイクロ波プラズマ / Neuron-MOS / 4端子デバイス / アナログ集積回路 / ニューロンMOS / イメージセンサ / EEPROM / プラズマCVD / 連想メモリ / ECR Plasma / ECRプラズマ / Neuron MOS Transistor / A / ゲート絶縁膜 / エッチング / 半導体プロセス / hillock-free / pure aluminum metalization / low temperature epitaxy / thin film formation / bias-sputtering / アルミ薄膜 / エピタキシャルシリコン / 低温エピタキシャル成長 / ヒロックフリー / Al薄膜 / 低エネルギイオン照射 / バイアススパッタ / epitaxial groth / low temperature process / carbon remaining / MOS structure / insulator film / microwave excited plasma / ラジカル酸化 / プロセス低温化 / エピタキシャル成長 / 低温プロセス / 残留炭素 / MOS / 絶縁膜 / シリコンカーバイト(SiC) / マイクロ波励起プラズマ / Semiconductor Manufacturing / Resist-residue Removal / Photo-Resist Stripping / プラズマアッシング / 気液混合 / フォトレジスト剥離 / レジスト残渣除去 / レジスト剥離 / Object Extraction / Image Compression / plasma CVD / Image Sensor / 高感度撮像素子 / 画像データ圧縮 / 並列画像処理 / 固体撮像システム / オブジェクト抽出 / 画像圧縮 / radial line slot antenna / direct oxidation / direct nitridation / silicon nitride / non volatile memory / high-k film / パリア膜 / 酸素ラジカル / バリア膜 / 有機金属ガス / LSI / 直接酸化 / 直接窒化 / 不揮発性メモリ / 強誘電体膜 / Speaker Recognition / Facial Expression Recognition / Codebook Space Information / Vector Quantization / Codebook / Face Recognition / コードブックスペクトル / 話者認識 / 表情認識 / コードブック空間情報処理 / ベクトル量子化 / コードブック / 顔画像認識 / Metal-gate MOS transistor / Bonded SOI wafer / Gas-isolated interconnect / Operational amplifier / Kink effect / Analog integrated circuit / Metal substrate / 金属ゲート電極 / 金属ゲートMOSトランジスタ / 張り合わせSOIウェハ / 気体絶縁配線構造 / オペアンプ / キンク効果 / 金属基板 / silicon nitride film / buffer layer / plasma oxidation / ferroelectric / high-density plasma / プロセス / 半導体 / プラズマ / 高誘電率膜 / 低誘電率層間絶縁膜 / O_2 / Kr / 低温プラズマ酸化 / マイクロ波 / バッファ層 / プラズマ酸化 / 高密度プラズマ / SS-CDMA cellular system / wireless multimedia / optical waveguide / parallel optical wiring / flexware system / super-parallel image processing / dielectric breakdown / thin gate oxide / SAW機能素子 / スペクトラム拡散通信 / パターン認識 / 光インターコネクション / Flexware / デバイスシミュレーション / SAM相関器 / グレーティングカプラ / 光導波路 / 右脳的情報処理 / ホットキャリア効果 / キャリア輸送 / SAW相関器 / CDMA / SS / コホ-ネンネット / プロセッサ・メモリ融合ユニット / ホットエレクトロン / 近似同期CDMA符号 / パケットSS-CDMAシステム / 超並列画像処理システム / 特徴量プリプロセス / 上位桁先行演算 / DSP / セル化SS-CDMAシステム / 光配線 / 超並列画像処理 / 酸化膜絶縁破壊 / high-precision processing / high-speed multipler / low power / flexware / プロセッサ・メモリ融合 / プロセス精度 / センスアンプニューロンMOS / 高精度プロセス / 高速乗算器 / 低消費電力 / フレックスウェア / Integrated circuit / neuron MOS transistor / center-of-mass / motion vector detection / real-time image recognition / two-dimensional image sensor / Image processing / ウィナー・テ-ク・オール / CMOSプロセス / 差分絶対値回路 / focal plane processing / MPEG / 実時間事象認識 / 重心検出 / 動きベクトル検出 / 実時間処理 / 画像処理 / GENERALIZATION / BACK PROPAGATION / SYNAPSE / NEURON MOS TRANSISTOR / HARDWARE LEARNING / SELF LEARNING / NEURAL NETWORK / ハードウェア学習アルゴリズム / フローティングゲート / アナログニューラルネットワーク / 自己学習 / ヘブルール / 学習アルゴリズム / 汎化能力 / 超LSI / 自己学習機能 / バックプロパゲーション / シナプス / ニューラルネットワーク / Ion Irradiation / Radical / Adsorption & Reaction / Epitaxy / Etching / Plasma CVD / Selectivity / イオン照射 / ラジカル / 吸着・反応 / エピタキシ / 選択性 / Thin Film Growth / Oxidation / Semiconductor Surface / 半導体薄膜成長 / 薄膜成長 / 酸化 / 半導体表面 / CMOS / Search Engine / Multi-Valued Memory / Data Matching / Multi-Valued Logic / Soft Hardware / Functional Device / MOSLSI / コンピュータアーキテクチャ / 加算器 / ソフトハードウェアロジック / 論理LSI / CMOS LSI / データマッチング / 多値メモリ / 多値情報処理 / ソフト・ハードウェア / 機能デバイス / Nitrogen Addition / Ultraclean / Selective Epitaxy / Anisotropy / Perfect Selectivity / Etching Delay Time / Langmuir's Adsorption / 窒素添加効果 / 超高清浄化 / 選択エピタキシ / 異方性 / 完全選択性 / エッチング遅れ時間 / ラングミュア吸着 / Full adder / Floating gate / D converter / Soft Hard ware Logic / Binary Logic Circuits / Neuron / Neural Network / ニュ-ラルネットワ-ク / Aコンバ-タ / D / 可変閾値素子 / MOSFET / 可変閾値トランジスタ / フラッシュA / フロ-ティングゲ-ト / 信号空間加算 / 全加算器 / Dコンバ-タ / ニュ-ロンMOSトランジスタ / ニュ-ロン / ソフトハ-ドウェア論理回路 / プラズマ加工 / マイクロ・ナノデバイス / 半導体超微細化 / システムオンチップ / 電子デバイス・機器 / シリコン面方位 / 低電子温度プラズマ Less

Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interfacePrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
Balanced Full CMOS LSI for Ultra High Performance and Ultra Low PowerConsumptionPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
High Voltage SiC Power Transistor having High Quality Gate Insulator Formed by Microwave Excited Plasma
- Principal Investigator
  
  TERAMOTO Akinobu
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOSPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOHOKU UNIVERSITY
微細化世代に依存しないダメージフリー新規コンタクト/ビア形成技術の研究
- Principal Investigator
  
  SUGAWA Shigetoshi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor
- Principal Investigator
  
  SUGAWA Shigetoshi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOHOKU UNIVERSITY
Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing
- Principal Investigator
  
  SUGAWA Shigetoshi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Ultra-High-Speed Real-Time Processing Circuit and AlgorithmPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  TOHOKU UNIVERSITY
Development of ultra-high-speed LSI with gas-isolated-interconnects and Ta metal gate transistors on SOI substratePrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Plasma process technology controlling dissociation of process gas for realizing step-by-step investment semiconductor manufacturingPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study for low-temperature formation of high-quality STNO high-k films for non-volatile memories
- Principal Investigator
  
  HIRAYAMA Masaki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  複合化集積システム
- Research Institution
  Tohoku University
Ultimate Integration of Intelligence on Silicon Electronic SystemsPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tohoku University
Mixed Integrated Systems for Real-Time Intelligent ProcessingPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  TOHOKU UNIVERSITY
High Accuracy and High Speed Analog Integrated Circuit Using Metal Substrate SOI Structure
- Principal Investigator
  
  KOTANI Koji
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Face Recognition System Using Codebook Space Information Processing
- Principal Investigator
  
  KOTANI Koji
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tohoku University
Scientific LSI Processing for Intelligent Electronic SystemsPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Metal-substrate SOI integrated circuits technologies for 10GHz clock operationPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Research of low-k/high-k dielectric films growth utilizing microwave exited plasma
- Principal Investigator
  
  HIRAYAMA Masaki
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMSPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  TOHOKU UNIVERSITY
MOMENTARY INFORMATION PROCESSING SYSTEM
- Principal Investigator
  
  TSUBOUCHI Kazuo
- Project Period (FY)
  1995 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  TOHOKU UNIVERSITY
High Speed Field Programmable LSI Using Current-Drive SilicidationPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
極限集積化シリコン知能エレクトロニクスPrincipal Investigator
- Principal Investigator
  
  大見忠弘
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Intelligent Image Processor based on neuron-MOS image sensor merged architecture
- Principal Investigator
  
  SIBATA Tadshi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
New Architecture Microprocessor Based on High-Density Distributed Placement of Memory-Function-Merged Processing Units
- Principal Investigator
  
  KOTANI Koji
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
ウルトラクリーン・プラズマプロセスシステムの開発Principal Investigator
- Principal Investigator
  
  大見忠弘
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  Tohoku University
超清浄金属表面の触媒作用による高効率水素ラジカル発生プロセスの研究Principal Investigator
- Principal Investigator
  
  大見忠弘
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
Research on Metal-Gate, High-Permittivity Gate-Insulator, Metal-Substrate SOI CMOS LSIPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
A NEURON-MOS NEURAL NETWORK FEATURING ON-CHIP SELF-LEARNING CAPABILITY
- Principal Investigator
  
  SHIBATA Tadashi
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
超LSIの完全ドライ・トータル低温製造ラインシステムの試作研究Principal Investigator
- Principal Investigator
  
  大見忠弘
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University
NEW LOGIC LSI'S HAVING SOFT HARDWARE CONFIGURATION
- Principal Investigator
  
  SHIBATA Tadashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION
- Principal Investigator
  
  MORITA Mizuho
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERITY
Selectivity inversion in plasma processing at low temperatures
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University
DEVELOPMENT OF ANISOTROPIC ETCHING TECHNOLOGY WITH PERFECT SELECTIVITY USING LANGMUIR'S ADSORPTION LAYER
- Principal Investigator
  
  MATSUURA Takashi
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
Study on Ultra High Speed Integrated Circuit Employing Metals in the Heart of the Device StructurePrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University
A New Functional MOS Transistor Featuring Neuron Functions
- Principal Investigator
  
  SHIBATA Tadashi
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  Tohoku University Grant-in-Aid for Scientic Research
DEVELOPMENT OF DUAL-FREQUENCY EXCITATION, LOW-KINETIC-ENERGY PARTICLE PROCESS EQUIPMENTPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
STUDY OF INTERCONNECT STRUCTURES FOR ULTR-HIGH-SPEED LSI'SPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1987 – 1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
RF-DC Coupled Mode Bias Sputtering System
- Principal Investigator
  
  SHIBATA Tadashi
- Project Period (FY)
  1987 – 1988
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY
Study of Singlecrystalline Pure Metal Interconnect for VLSI'sPrincipal Investigator
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  TOHOKU UNIVERSITY

All 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003

All Journal Article Presentation Book Patent

[Book] Advanced Gate Stacks for High-Mobility Semiconductors2007
- Author(s)
  A. Teramoto, T Ohmi
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015
- Author(s)
  Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DA04-04DA04
- DOI
  10.7567/jjap.54.04da04
- NAID
  210000144951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129, KAKENHI-PROJECT-26820121
[Journal Article] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014
- Author(s)
  Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Issue: 3 Pages: 47-53
- DOI
  10.1149/06103.0047ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Issue: 2 Pages: 401-407
- DOI
  10.1149/06102.0401ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129
[Journal Article] Carrier Mobility Characteristics of (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Fin Structure Design of Multi-gate Metal-Insulator-Silicon Field-Effect Transistors2014
- Author(s)
  Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 04EC04-04EC04
- DOI
  10.7567/jjap.53.04ec04
- NAID
  210000143558
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation2013
- Author(s)
  Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 53 Issue: 1 Pages: 343-350
- DOI
  10.1149/05301.0343ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] l/f noise of accumulation mode p-and n-MOSFETs2013
- Author(s)
  Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  Proceedings of 22nd International Conference on Noise and Fluctuations
  
  Volume: 1 Pages: 26-29
- DOI
  10.1109/icnf.2013.6578879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface2013
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 109 Pages: 197-199
- DOI
  10.1016/j.mee.2013.03.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s2013
- Author(s)
  Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 26 Issue: 3 Pages: 288-295
- DOI
  10.1109/tsm.2013.2260568
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si (100) Surface Changed by Alkaline Etching2013
- Author(s)
  Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Issue: 7 Pages: 349-354
- DOI
  10.1149/05807.0349ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers2011
- Author(s)
  Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 35 Pages: 275-284
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Science-based New Silicon Technologies Exhibiting Super High Performance due to Radical-reaction-based Semiconductor Manufacturing2011
- Author(s)
  Tadahiro Ohmi
- Journal Title
  
  Journal of the Korean Physical Society
  
  Volume: 59 Pages: 391-401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Low Contact Resistivity with Low Silicide/p^+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors2010
- Author(s)
  Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  210000068161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
- Author(s)
  T.Suwa, A.Teramoto, Y.Kumagai, K.Abe, X.Li, Y.Nakao, M.Yamamoto, Y.Kato, T.Muro, T.Kinoshita, T.Ohmi, T.Hattori
- Journal Title
  
  Journal of Applied Physics Letters
  
  Volume: 96 Pages: 173103-173104
- NAID
  110008106358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Relation Between the Mobility, 1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers2010
- Author(s)
  Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tadahiro Ohmi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 57 Pages: 1597-1607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Atomically Flattening Technology at 850℃ for Si(100) Surface2010
- Author(s)
  X.Li, T.Suwa, A.Teramoto, R.Kuroda, S.Sugawa, T.Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 28 Pages: 299-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS2010
- Author(s)
  Y.Nakao, R.Kuroda, H.Tanaka, T.Isogai, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 28 Pages: 315-324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers2009
- Author(s)
  P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
- Journal Title
  
  Journal of Vacuum Science, Technology B Vol.27,No.1
  
  Pages: 394-401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Charac- terization for High-Performance CMOS Using In-Water Advanced Kelvin -Contact Device Structure2009
- Author(s)
  R. Kuroda, A. Teramoto, T. Komori, S. Sugawa, T. Ohmi
- Journal Title
  
  IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Vol.22,No.1
  
  Pages: 126-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator- Silicon FETs2009
- Author(s)
  R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, T. Ohmi
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.56,NO.2
  
  Pages: 291-298
- NAID
  120002338863
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing2009
- Author(s)
  R. Hasebe, A. Teramoto, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi
- Journal Title
  
  Journal of Electrochemical Society Vol.156No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal-Oxide-Semiconductor Field-Effect Transistors2008
- Author(s)
  R. KURODA, A. TERAMOTO, S. SUGAWA, T. OHMI
- Journal Title
  
  Japanese Journal of Applied Physics Vol.47,No.4
  
  Pages: 2668-2671
- NAID
  210000064562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals2008
- Author(s)
  T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS Vol.104,No.11
- NAID
  120002338929
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon2008
- Author(s)
  T. ISOGAI, H. TANAKA, T. GOTO, A. TERAMOTO, S. SUGAWA, T. OHMI
- Journal Title
  
  Japanese Journal of Applied Physics Vol.47,No.4
  
  Pages: 3138-3141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces2007
- Author(s)
  M. HIGUCHI, T. ARATANI, T. HAMADA, S. SHINAGAWA, H. NOHIRA, E. IKENAGA, A. TERAMOTO, T. HATTORI, S. SUGAWA, T. OHMI
- Journal Title
  
  Japanese Journal of Applied Physics Vol.46,No.4B
  
  Pages: 1895-1898
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi
- Journal Title
  
  Microelectronic Engineering Vol.84/9-10
  
  Pages: 2105-2108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Very Hight Carrier Mobility for High-Performance CMOS on a Si(110) Surface2007
- Author(s)
  A. Teramoto, T. Hamada, M. Yamamoto, P. Gaubert, H. Akahori, K. Nii, M. Hirayama, K. Arima, K. Endo, S. Sugawa, T. Ohmi
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.54,NO.6
  
  Pages: 1438-1445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007
- Author(s)
  W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
- Journal Title
  
  ECS Transactions Vol.6No.4
  
  Pages: 101-106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Journal Title
  
  Electrochemical Society Transactions Vol.11No.6
  
  Pages: 349-354
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate2007
- Author(s)
  T. Ohmi, A. Teramoto, R. Kuroda, N. Miyamoto
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES VOL.54,NO.6
  
  Pages: 1471-1477
- NAID
  120002338879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Revolutional Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz Clock Rate2007
- Author(s)
  Tadahiro Ohmi
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES 54
  
  Pages: 1471-1477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] Hot Carrier Instability Mechanism in Accumulation- Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007
- Author(s)
  R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
- Journal Title
  
  ECS Transactions Vol.6No.4
  
  Pages: 113-118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] New era of silicon technologies due to radical reation based semiconductor manufacturing2006
- Author(s)
  Tadahiro Ohmi
- Journal Title
  
  Journal of Physics D : Applied Physics 39
- Data Source
  KAKENHI-PROJECT-18002004
[Journal Article] High Current Drivability MOSFET Fabricated on Si(110) surface2005
- Author(s)
  A.Teramoto, T.Ohmi
- Journal Title
  
  2005 Materials Research Society (MRS) Spring Meeting (発表予定)(to be published)
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Suppression of Surface Micro-Rouhness on Si(110)2005
- Author(s)
  K.Nii, M.Yamamoto, A.Teramoto, T.Ohmi
- Journal Title
  
  ECS (印刷中)(to be published)
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Quality Plasma Processing using Microwave Excited Plasma System with Xenon Gas2005
- Author(s)
  Y.Shirai, A.Teramoto, M.Hirayama, T.Ohmi, T.Satoh, M.Yamawaki
- Journal Title
  
  Conference Proceeding of ISSM2004
  
  Pages: 432-435
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] EOT Measurement for Ultra-Thin gate Dielectrics using LC2005
- Author(s)
  A.Teramoto, M.Komura, R.Kuroda, K.Watanabe, S.Sugawa, T.Ohmi
- Journal Title
  
  2005 International Conference on Microelectronics Test Structure (発表予定)(to be published)
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Control of nitrogen profile in radical nitridation of SiO_2 films2004
- Author(s)
  K.Kawase, H.Umeda, M.Inoue, S.Tsujikawa, A.Teramoto, T.Ohmi
- Journal Title
  
  the 2004 International Conference on SOLID STATE DEVICES AND MATERIALS
  
  Pages: 204-205
- NAID
  10022538215
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Performance Low Noise CMOS Fabricated on Flattened (110) oriented Si Substrate2004
- Author(s)
  T.Hamada.A.Teramoto, H.Akahori, K.Nii, M.Hirayama, T.Ohmi
- Journal Title
  
  2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
  
  Pages: 163-166
- NAID
  110003175607
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Quality Silicon Nitride Film Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition with Dual Gas Shower Head2003
- Author(s)
  H.Tanaka, Z.Chuanjie, Y.Hayakawa, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conferences on Solid State Devices and Materials
  
  Pages: 736-737
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Quality Silicon Nitride Film Formed by Microwave-Excited Plasma Enhanced Chemical Vaspor Deposition with Dual Gas Shower Head2003
- Author(s)
  H.Tanaka, Z.Chuanjie, Y.Hayakawa, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conference on SOLID STATE DEVICES AND MATERIALS
  
  Pages: 736-737
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for Sub-100nm Generation2003
- Author(s)
  M.Komura, M.Higuchi, W.Cheng, I.Ohshima, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conferences on Solid State Devices and Materials
  
  Pages: 452-453
- NAID
  10011880733
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for Sub-100nm Generation2003
- Author(s)
  M.Komura, M.Higuchi, W.Cheng, I.Ohshima, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conference on SOLID STATE DEVICES AND MATERIALS
  
  Pages: 452-453
- NAID
  10011880733
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Reliability of silicon nitride gate dielectrics grown at 400℃ formed by microwave-excited high-density plasma2003
- Author(s)
  I.Ohshima, W.Cheng, Y.Ono, M.Higuchi, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 246-251
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Atomic Order Flattening of Hydrogen-Terminated Si(110) substrate For Next Generation ULSI Devices2003
- Author(s)
  H.Akahori, K.Nii, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conferences on Solid State Devices and Materials
  
  Pages: 458-459
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Atomic Order Flattening of Hydrogen-Terminated Si(110)substrate For Next Generation ULSI Devices2003
- Author(s)
  H.Akahori, K.Nii, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conference on SOLID STATE DEVICES AND MATERIALS
  
  Pages: 458-459
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Low Noise Balanced-CMOS on Si(100) surface for Analog/Digital Mixed Signal Circuits2003
- Author(s)
  A.Teramoto, T.Hamada, H.Akahori, K.Nii, T.Suwa, K.Kotani, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 IEEE International ELECTRON DEVICES MEETING
  
  Pages: 801-803
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology2003
- Author(s)
  F.Imaizumi, T.Hayashi, K.Ishii, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conferences on Solid State Devices and Materials
  
  Pages: 724-725
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] High Performance Poly-Si Device with Thin Gate Oxide Film Groen by Plasma Oxidation Technology2003
- Author(s)
  F.Imaizumi, T.Hayashi, K.Ishii, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 International Conference on SOLID STATE DEVICES AND MATERIALS
  
  Pages: 724-725
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Reliability of silicon nitride gate dielectrics grown at 400℃ formed by microwave-excited high-density plasma2003
- Author(s)
  I.Ohshima, W.Cheng, Y.Ono, M.Higuchi, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi
- Journal Title
  
  Applied Surface Science Vol.216
  
  Pages: 246-251
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Journal Article] Low Noise Balanced-CMOS on Si(100)surface for Analog/Digital Mixed Signal Circuits2003
- Author(s)
  A.Teramoto, T.Hamada, H.Akahori, K.Nii, T.Suwa, K.Kotani, M.Hirayama, S.Sugawa, T.Ohmi
- Journal Title
  
  2003 IEEE International_ELECTRON DEVICES MEETING
  
  Pages: 801-803
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360156
[Patent] 半三次元構造半導体装置2008
- Inventor(s)
  大見忠弘, 寺本章伸
- Industrial Property Rights Holder
  国立大学法人東北大学, (財)国際科学振興財団
- Industrial Property Number
  2007-088444
- Filing Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18002004
[Patent] コンタクト形成方法、半導体装置の製造方法および半導体装置2008
- Inventor(s)
  大見忠弘
- Industrial Property Rights Holder
  国立大学法人東北大学, (財)国際科学振興財団
- Industrial Property Number
  2008-129692
- Filing Date
  2008-05-16
- Data Source
  KAKENHI-PROJECT-18002004
[Patent] 半導体装置およびその製造方法2007
- Inventor(s)
  大見忠弘寺本章伸
- Industrial Property Rights Holder
  国立大学法人東北大学東京エレクトロン(株)
- Industrial Property Number
  2007-283659
- Filing Date
  2007-10-31
- Data Source
  KAKENHI-PROJECT-18002004
[Patent] 半導体基板および半導体装置2007
- Inventor(s)
  大見忠弘寺本章伸諏訪智之黒田理人工藤秀雄速水善範
- Industrial Property Rights Holder
  国立大学法人東北大学信越半導体(株)
- Industrial Property Number
  2007-261096
- Filing Date
  2007-10-04
- Data Source
  KAKENHI-PROJECT-18002004
[Patent] 樹脂配管2007
- Inventor(s)
  大見忠弘寺本章伸伏見圭太山中二朗宮下雅之西岡群晴
- Industrial Property Rights Holder
  国立大学法人東北大学ニチアス(株) ステラケミファ(株) 宇部興産株式会社
- Industrial Property Number
  2007-338690
- Filing Date
  2007-12-28
- Data Source
  KAKENHI-PROJECT-18002004
[Patent] 半導体装置およびその製造方法2007
- Inventor(s)
  大見忠弘, 寺本章伸
- Industrial Property Rights Holder
  国立大学法人東北大学, 東京エレクトロン(株)
- Industrial Property Number
  2007-283659
- Filing Date
  2007-10-31
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014
- Author(s)
  T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
- Organizer
  The 2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center, つくば
- Year and Date
  2014-09-09
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  225th Meeting of The Electrochemical Society
- Place of Presentation
  Hilton Orlando Bonnet Creek, Orlando, USA
- Year and Date
  2014-05-14
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] 応用物理学会優秀論文賞受賞記念講演"Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species"2014
- Author(s)
  諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆桂之、木下豊彦、須川成利、大見忠弘、服部健雄
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014
- Author(s)
  Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  225th Meeting of The Electrochemical Society
- Place of Presentation
  Hilton Orlando Bonnet Creek, Orlando, USA
- Year and Date
  2014-05-13
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Effect of composition rate on erbium silicide work function on different silicon surface orientation2013
- Author(s)
  H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi
- Organizer
  223rd Meeting of The Electrochemical Society
- Place of Presentation
  Toronto, Canada
- Year and Date
  2013-05-15
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] 1/f noise of accumulation mode p- and n-MOSFETs2013
- Author(s)
  Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  22nd International Conference on Noise and Fluctuations
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution2013
- Author(s)
  T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
- Organizer
  The 2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces for Multi-gate MOSFETs Device Design2013
- Author(s)
  Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi
- Organizer
  The 2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2013-09-25
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si (100) Substrate Near the Interface2013
- Author(s)
  T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori
- Organizer
  18th Conference of "Insulating Films on Semiconductors"
- Place of Presentation
  Cracow, Poland
- Year and Date
  2013-06-26
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Schottky barrier height between erbium silicide and various morphology of Si (100) surface changed by alkaline etching2013
- Author(s)
  H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi
- Organizer
  224th Meeting of The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2013-10-29
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Radical Oxidation and Radical Nitridation for High Integrity Gate Insulator Films on Any Crystal Orientation Silicon Surface for Super High Performance 3D MOS Transistors2012
- Author(s)
  Tadahiro Ohmi
- Organizer
  2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
- Place of Presentation
  Shanghai, China(招待講演)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Pr_3Si_6N_<11>/Si_3N_4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si_3N_4 Interfacial Layers2011
- Author(s)
  Tadahiro Ohmi
- Organizer
  219th Meeting of The Electrochemical Society
- Place of Presentation
  Montreal, Canada
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Science Based New Silicon Technologies Exhibiting Super High Speed Performance Over 100GHz Clock Rate2011
- Author(s)
  Tadahiro Ohmi
- Organizer
  30^<th> Electronic Materials Symposium
- Place of Presentation
  Shiga(招待講演)
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Science Based New Silicon Technologies Exhibiting Super High Performance due to Radical Reaction Based Semiconductor Manufacturing2011
- Author(s)
  Tadahiro Ohmi
- Organizer
  The 18^<th> Korean Conference on Semiconductors
- Place of Presentation
  Jeju, KOREA
- Year and Date
  2011-02-17
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing2011
- Author(s)
  X.Li, R.Kuroda, T.Suwa, A.Teramoto, S.Sugawa, T.Ohmi
- Organizer
  2011 Interanational Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Ultra-low Series Resistance W/ErSi_2/n^+-Si and W/Pd_2Si/p^+-Si S/D Electrodes for Advanced CMOS Platform2010
- Author(s)
  Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  IEEE International ELECTRON DEVICES meeting (IEDM) 2010
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2010-12-08
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Impact of Channel Direction Dependent Low Field Hole Mobility on Si(100)2010
- Author(s)
  Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
- Organizer
  the 2010 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Science Based New Silicon Devices Exhibiting Super High Performance by Very New Plasma Equipment Completely Free From Damages2010
- Author(s)
  Tadahiro Ohmi
- Organizer
  Final Program of World Automation Congress 2010
- Place of Presentation
  神戸
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications2008
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, C.F. Tye, S. Watabe, S. Sugawa, T. Ohmi
- Organizer
  29th International Conference on the Physics of Semiconductors (ICPS 2008)
- Place of Presentation
  Rio de Janeiro, BRAZIL
- Year and Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Hole mobility in Si(110) p-MOS transistors2008
- Author(s)
  P. Gaubert, A. Teramoto, T. Ohmi
- Organizer
  PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2008-10-13
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Atomically Flat Gate Insulator/Silicon (100) Interface Formation Introducing High Mobility, Ultra-low Noise, and Small Characteristics Variation CMOSFET2008
- Author(s)
  R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, T. Ohmi
- Organizer
  38th European Solid-State Device Research Conference (ESSDERC 2008)
- Place of Presentation
  Edinburgh, SCOTLAND
- Year and Date
  2008-09-16
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Revolutional Progress of Silicon Device due to Radical Reaction Based Semiconductor Manufacturing Technologies2008
- Author(s)
  Tadahiro Ohmi
- Organizer
  WPI & IFCAM Joint Workshop
- Place of Presentation
  Sendai
- Year and Date
  2008-02-19
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits2008
- Author(s)
  W. Cheng, A. Teramoto, C.F. Tye, R. Kuroda, S. Sugawa, T. Ohmi
- Organizer
  Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Tsukuba, JAPAN
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface2008
- Author(s)
  R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa, T. Ohmi
- Organizer
  Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Tsukuba, JAPAN
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface2008
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs2008
- Author(s)
  Cheng, S. Watabe, C.F. Tye, S. Sugawa, T. Ohmi
- Organizer
  2008 IEEE International Conference on Microelectronic Test Structures
- Place of Presentation
  Edinburgh, SCOTLAND
- Year and Date
  2008-03-26
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  39th IEEE Annual Power Electronics Specialists Conference
- Place of Presentation
  Rhodes, GREECE
- Year and Date
  2008-06-18
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts2008
- Author(s)
  T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
- Organizer
  Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Tsukuba, JAPAN
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces2008
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts, Abs
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Low Contract Resistance with Low Schottky Barrier for N-Type Silicon Using Yttrium Silicide2007
- Author(s)
  T. Isogai, H. Tanaka, T. Goto, A. Teramoto, S. Sugawa, T. Ohmi
- Organizer
  Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES and MATERIALS
- Place of Presentation
  Tsukuba, JAPAN
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007
- Author(s)
  W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T. Ohmi
- Organizer
  Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconsuctors
- Place of Presentation
  Athena, GREECE
- Year and Date
  2007-06-20
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Revolutional Progress of Silicon Technologies Revolutional Progress of Device Perfoemance and Manufacturing Technologies2007
- Author(s)
  T. Ohmi
- Organizer
  The 7th Japan-Taiwan Microelectronics International Symposium
- Place of Presentation
  Tokyo, JAPAN
- Year and Date
  2007-10-24
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007
- Author(s)
  W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
- Organizer
  211th Meeting of The Electrochemical Society
- Place of Presentation
  Chicago, USA
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode MOSFETs2007
- Author(s)
  R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi
- Organizer
  Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES and MATERIALS
- Place of Presentation
  Tsukuba, JAPAN
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Radical induced very high integrity gate insulator films for 3D transistors on any crystal orientation Si surface2007
- Author(s)
  Tadahiro Ohmi
- Organizer
  Stanford & Tohoku University Joint Open Workshop on 3D Transistor and its Applications
- Place of Presentation
  Palo Alto
- Year and Date
  2007-11-20
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Revolutional Progress of Silicon Technologies Revolutional Progress of Device Perfoemance and Manufacturing Technologies2007
- Author(s)
  Tadahiro Ohmi
- Organizer
  The 7th Japan-Taiwan Microelectronics International Symposium
- Place of Presentation
  Tokyo
- Year and Date
  2007-10-24
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007
- Author(s)
  R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
- Organizer
  211th Meeting of The Electrochemical Society
- Place of Presentation
  Chicago, USA
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007
- Author(s)
  W. Cheng, A. Teramoto, T. Ohmi
- Organizer
  212th Meeting of The Electrochemical Society
- Place of Presentation
  Washington D.C. USA
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-18002004
[Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations2007
- Author(s)
  R. Kuroda, A. Teramoto, C. Weitao, S. Sugawa, T. Ohmi
- Organizer
  2007 IEEE International SOI Conference
- Place of Presentation
  Indian Wells, CA., USA
- Year and Date
  2007-10-02
- Data Source
  KAKENHI-PROJECT-18002004

1. SHIBATA Tadashi (00187402)

# of Collaborated Projects: 15 results

# of Collaborated Products: 0 results
2. MORITA Mizuho (50157905)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
3. KOTANI Koji (20250699)

# of Collaborated Projects: 9 results

# of Collaborated Products: 0 results
4. HIRAYAMA Masaki (70250701)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
5. SUGAWA Shigetoshi (70321974)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. TSUBOUTI Kazuo (30006283)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
7. ASADA Kunihiro (70142239)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
8. ISHIWARA Hiroshi (60016657)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. HORIIKE Yasuhiro (20209274)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. KAMEYAMA Michitaka (70124568)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. TERAMOTO Akinobu (80359554)

# of Collaborated Projects: 2 results

# of Collaborated Products: 49 results
12. MATSUURA Takashi (60181690)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. ONO Shoichi (00005232)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. MUROTA Junichi (70182144)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. 伊野和英

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
16. SHIRAI Yasuyuki (70375187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. KITANO Masafumi (60420048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. GOTO Tetsuya (00359556)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
19. SUWA Tomoyuki (70431541)

# of Collaborated Projects: 1 results

# of Collaborated Products: 14 results
20. HIROSE Masataka (10034406)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. TANUGUCHI Kenji (20192180)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. IWATA Akira (30263734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. YAMANAKA Takeshi (00005547)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. YASUURA Hiroto (80135540)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. NANYA Takashi (80143684)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. MIURA Michiko (70291482)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. MORIMOTO Akihiro (10359557)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 津守俊郎 (10375181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 白川功 (10029100)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. MEINDL James D

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. JOHN F. O'Ha

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. BLEWER Rober

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OHMI Tadahiro 大見 忠弘

Research Projects

Research Products

Co-Researchers

Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interfacePrincipal Investigator

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Balanced Full CMOS LSI for Ultra High Performance and Ultra Low PowerConsumptionPrincipal Investigator

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Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOSPrincipal Investigator

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Ultra-High-Speed Real-Time Processing Circuit and AlgorithmPrincipal Investigator

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Development of ultra-high-speed LSI with gas-isolated-interconnects and Ta metal gate transistors on SOI substratePrincipal Investigator

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Plasma process technology controlling dissociation of process gas for realizing step-by-step investment semiconductor manufacturingPrincipal Investigator

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Principal Investigator

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Ultimate Integration of Intelligence on Silicon Electronic SystemsPrincipal Investigator

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Mixed Integrated Systems for Real-Time Intelligent ProcessingPrincipal Investigator

Principal Investigator

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Principal Investigator

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OHMI Tadahiro 大見忠弘