Wang Dong 王冬

… Alternative Names

WANG DONG 王冬

WANG Dong 王冬

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Researcher Number	10419616
Other IDs
Affiliation (Current)	2025: 九州大学, 総合理工学研究院, 教授
Affiliation (based on the past Project Information) *help	2023 – 2024: 九州大学, 総合理工学研究院, 教授 2017 – 2019: 九州大学, 総合理工学研究院, 准教授 2014 – 2016: 九州大学, 総合理工学研究科(研究院), 准教授 2015: 九州大学, 総合理工学研究院, 准教授 2012: 九州大学, 総合理工学研究院, 准教授 2011 – 2012: 九州大学, 総合理工学研究科(研究院), 准教授 2009 – 2011: Kyushu University, 産学連携センター, 特任准教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 電子・電気材料 / 局所歪み / Ge-光素子 / 金属/半導体コンタクト / 先端機能デバイス / 半導体物性 / 解析・評価 / Ge-On-Insulator基板 / MIS型 / 近赤外発光 … More / トンネリング障壁高さ / 金属／半導体コンタクト / チップ内光配線 / 横方向発光・受光 / Ge/絶縁膜界面 / Ge-On-Insulator / 局所歪 / GOI / 電子密度 / CMOS / Siフォトニクス / Ge光素子 / ゲルマニウム（Ge） / 高移動度チャネル / MOSFET / 歪み印加 / ゲルマニウム(Ge) … More Except Principal Investigator 絶縁膜 / 電子・電気材料 / 基板貼り合わせ / Ge-on-Insulator / ゲルマニウム / 金属/半導体コンタクト / 電子材料 / 高性能デバイス / Ge半導体 / 先端機能デバイス / 結晶工学 / 半導体物性 Less

中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発
- Principal Investigator
  
  山本圭介
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発Principal Investigator
- Principal Investigator
  
  王冬
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Performance enhancement for Ge optical devices by applying local strain to Ge-On-Insulator substratesPrincipal Investigator
- Principal Investigator
  
  Wang Dong
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development of basic technology for Ge-CMOS integratable high-performance Ge optical devicesPrincipal Investigator
- Principal Investigator
  
  Wang Dong
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development of basic technology for achievement of metal source/drain Ge-CMOS device
- Principal Investigator
  
  NAKASHIMA HIROSHI
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Development of local-strain technology for crystalline Ge and its application to transistorsPrincipal Investigator
- Principal Investigator
  
  WANG Dong
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Formation of Strained Ge Channel and Material Evaluation for High performance ULSI
- Principal Investigator
  
  NAKASHIMA Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Precise strain evaluation for high-performance bipolar transistorPrincipal Investigator
- Principal Investigator
  
  WANG Dong
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University

All 2023 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 Other

All Journal Article Presentation

[Journal Article] High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis2020
- Author(s)
  Oka Ryusei、Yamamoto Keisuke、Akamine Hiroshi、Wang Dong、Nakashima Hiroshi、Hishiki Shigeomi、Kawamura Keisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGD17-SGGD17
- DOI
  10.35848/1347-4065/ab6862
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0134, KAKENHI-PROJECT-17H03237
[Journal Article] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut(TM) and Defect Elimination2019
- Author(s)
  Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
- Journal Title
  
  ECS transactions
  
  Volume: 93 Issue: 1 Pages: 73-77
- DOI
  10.1149/09301.0073ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
[Journal Article] Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate2019
- Author(s)
  Maekrua Takayuki、Goto Taiki、Nakae Kohei、Yamamoto Keisuke、Nakashima Hiroshi、Wang Dong
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBE05-SBBE05
- DOI
  10.7567/1347-4065/aafb5e
- NAID
  210000135344
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Journal Title
  
  ECS transactions
  
  Volume: 92 Issue: 4 Pages: 3-10
- DOI
  10.1149/09204.0003ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
[Journal Article] Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation2019
- Author(s)
  Yamamoto Keisuke、Nakae Kohei、Wang Dong、Nakashima Hiroshi、Xue Zhongying、Zhang Miao、Di Zengfeng
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBA14-SBBA14
- DOI
  10.7567/1347-4065/ab02e3
- NAID
  210000155626
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy2018
- Author(s)
  Wen Wei-Chen、Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 124 Issue: 20
- DOI
  10.1063/1.5055291
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition2018
- Author(s)
  Yamamoto K、Noguchi R、Mitsuhara M、Nishida M、Hara T、Wang D、Nakashima H
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 33 Issue: 11 Pages: 114011-114011
- DOI
  10.1088/1361-6641/aae4bd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] (Invited) Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer2017
- Author(s)
  Nakashima Hiroshi、Okamoto Hayato、Yamamoto Keisuke、Wang Dong
- Journal Title
  
  ECS transactions
  
  Volume: 80 Issue: 4 Pages: 97-106
- DOI
  10.1149/08004.0097ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes2017
- Author(s)
  Maekura T、Tanaka K、Motoyama C、Yoneda R、Yamamoto K、Nakashima H、Wang D
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 10 Pages: 104001-104001
- DOI
  10.1088/1361-6641/aa827f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03237
[Journal Article] Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure2017
- Author(s)
  Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 3 Pages: 035001-035001
- DOI
  10.1088/1361-6641/32/3/035001
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016
- Author(s)
  T. Maekura, K. Yamamoto, H. Nakashima, and D. Wang
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55(4S) Issue: 4S Pages: 04EH08-04EH08
- DOI
  10.7567/jjap.55.04eh08
- NAID
  210000146355
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Direct band gap light emission and detection at room temperature in bulk germanium　diodes with HfGe/Ge/TiN structure2016
- Author(s)
  D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 43-47
- DOI
  10.1016/j.tsf.2015.09.074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks2016
- Author(s)
  T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 260-264
- DOI
  10.1016/j.mssp.2016.11.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090, KAKENHI-PROJECT-16H02333
[Journal Article] Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack2016
- Author(s)
  Y. Nagatomi, T. Tateyama, S. Tanaka, W.-C. Wen, T. Sakaguchi, K. Yamamoto, L. Zhao, D. Wang, and H. Nakashima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 246-253
- DOI
  10.1016/j.mssp.2016.11.014
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction2016
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 283-287
- DOI
  10.1016/j.mssp.2016.09.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015
- Author(s)
  S. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2015 International Conference on Solid State Devices and　Materials (SSDM2015)
  
  Volume: なし Pages: 28-29
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates2015
- Author(s)
  K. Kasahara, Y. Nagatomi, K. Yamamoto, H. Higashi, M. Nakano, S. Yamada, D. Wang, H. Nakashima, and K. Hamaya
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 14
- DOI
  10.1063/1.4932376
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246020, KAKENHI-PROJECT-25249035
[Journal Article] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/MetalDdiodes2015
- Author(s)
  T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015)
  
  Volume: なし Pages: 606-607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge2015
- Author(s)
  K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118(11) Issue: 11
- DOI
  10.1063/1.4930573
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: 69(10) Issue: 10 Pages: 55-66
- DOI
  10.1149/06910.0055ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs2015
- Author(s)
  Y. Nagatomi, S. Tanaka, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54(7) Issue: 7 Pages: 070306-070306
- DOI
  10.7567/jjap.54.070306
- NAID
  210000145332
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Journal Title
  
  Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)
  
  Volume: なし Pages: 10-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 261-266
- DOI
  10.1149/06406.0261ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method2014
- Author(s)
  D. Wang, Y. Nagatomi, S. Kojima, K. Yamamoto, H. Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 288-291
- DOI
  10.1016/j.tsf.2013.10.065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure2014
- Author(s)
  D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto, and H. Nakashima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106(7) Issue: 7
- DOI
  10.1063/1.4913261
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge2014
- Author(s)
  K. Yamamoto, M. Mitsuhara, K. Hiidome, R. Noguchi, M. Nishida, D. Wang, and H. Nakashima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 13 Pages: 288-291
- DOI
  10.1063/1.4870510
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Effect of Kr/O2 ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)
  
  Volume: なし Pages: 10-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: 64(6) Pages: 261-266
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack2013
- Author(s)
  K. Yamamoto, T. Sada, D. Wang, and H. Nakashima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 12
- DOI
  10.1063/1.4821546
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts2013
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: 58(9) Pages: 167-178
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035
[Journal Article] Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height2012
- Author(s)
  K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 7R Pages: 0702081-0702083
- DOI
  10.1143/jjap.51.070208
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06933, KAKENHI-PROJECT-23760017
[Journal Article] Fabrication of ZrSiO/Ge Gate Stacks with GeO2and ZrGeO Interlayers2012
- Author(s)
  S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
  
  Pages: 12-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back- Gate MOSFET2012
- Author(s)
  K. Asakawa, K. Yamamoto, D. Wang, H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
  
  Pages: 64-65
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO_2/GeO_2 bilayer passivation2012
- Author(s)
  D. Wang, S. Kojima, K. Sakamoto, K. Yamamoto, H. Nakashima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 8 Pages: 0837071-0837075
- DOI
  10.1063/1.4759139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06933, KAKENHI-PROJECT-23760017
[Journal Article] Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator2012
- Author(s)
  D. Wang, K. Yamamoto, Hongye, H. Yang, H. Nakashima
- Journal Title
  
  J. Electrochem. Soc
  
  Volume: Vol. 158, No. 12 Issue: 12 Pages: H1221-H1221
- DOI
  10.1149/2.037112jes
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs2012
- Author(s)
  H. Nakashima, K. Yamamoto, H. Yang, and D. Wang
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: 50 Issue: 9 Pages: 205-216
- DOI
  10.1149/05009.0205ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain2012
- Author(s)
  T. Sada, K. Yamamoto, H. Yang, D. Wang, H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
  
  Pages: 737-738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET2012
- Author(s)
  K. Asakawa, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012)
  
  Volume: なし Pages: 64-65
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers2012
- Author(s)
  S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials (SSDM2012)
  
  Volume: なし Pages: 12-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain2012
- Author(s)
  T. Sada, K. Yamamoto, H. Yang, D. Wang, and H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2012)
  
  Volume: なし Pages: 737-738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures2012
- Author(s)
  K. Yamamoto, H. Nakashima, et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 0513011-0513013
- DOI
  10.1143/apex.5.051301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J06933, KAKENHI-PROJECT-23760017
[Journal Article] Ohmic contact formation on n-type Ge by direct deposition of TiN2011
- Author(s)
  M.Iyota, K.Yamamoto, D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Appl.Phys.Lett
  
  Volume: Vol.98, No.19 Issue: 19
- DOI
  10.1063/1.3590711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011
- Author(s)
  H. Yang, D. Wang, H. Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520, No.8 Pages: 3283-3287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with UltrathinSiO2/GeO2 Bilayer by Nitrogen Incorporation2011
- Author(s)
  K. Sakamoto, Y. Iwamura,K. Yamamoto, H. Yang, D. Wang, H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  
  Volume: なし Pages: 885-886
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and holemobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520,No.8 Issue: 8 Pages: 3283-3287
- DOI
  10.1016/j.tsf.2011.10.078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-09F09271, KAKENHI-PROJECT-21246054
[Journal Article] Measurement of strain and strain relaxation in free-standingSi membranes by convergent beam electron diffraction and finite element method2011
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima,D.Wang, H.Nakashima
- Journal Title
  
  Acta Materialia Vol.59
  
  Pages: 2882-2890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] 極薄GeO_2界面層を有するZr系high-k/Geゲートスタック構造の形成2011
- Author(s)
  平山佳奈、岩村義明、上野隆二、楊海貴、王冬、中島寛
- Journal Title
  
  九州大学大学院総合理工学報告
  
  Volume: 第32巻 Pages: 5-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Fabrication of Ge Metal-Oxide-Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO_2/GeO_2 Bilayer Passivation and Postmetallization Annealing Effect of Al2011
- Author(s)
  K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.50 Issue: 4S Pages: 04DA10-04DA10
- DOI
  10.1143/jjap.50.04da10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al_2O_3 deposition and subsequent post-annealing2011
- Author(s)
  H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
- Journal Title
  
  Solid State Electronics
  
  Volume: (印刷中)
- NAID
  120004951622
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Source/drain junction fabrication for Ge metal-Oxide-semiconductor field-effect transistors2011
- Author(s)
  K.Yamamoto, T.Yamanaka, R.Ueno, K.Hirayama, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520, No.8 Issue: 8 Pages: 3382-3386
- DOI
  10.1016/j.tsf.2011.10.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
[Journal Article] High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation2011
- Author(s)
  K.Yamamoto, R.Ueno, T.Yamanaka,K.Hirayama, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Appl.Phys.Express
  
  Volume: Vol.4, No.5 Issue: 5 Pages: 051301-051301
- DOI
  10.1143/apex.4.051301
- NAID
  10028210109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
[Journal Article] Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method2011
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Acta Materialia
  
  Volume: Vol.59 Pages: 2882-2890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO_2/GeO_2 Bilayer by Nitrogen Incorporation2011
- Author(s)
  K.Sakamoto, Y.Iwamura, K.Yamamoto, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  
  Pages: 885-886
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator2011
- Author(s)
  D.Wang, K.Yamamoto, H.Gao, H.Yang, H.Nakashima
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: Vol.34 Pages: 1117-1122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Postmetallization annealing effect of TiN-gate Ge metal-Oxide-semiconductor capacitor with ultrathin SiO_2/GeO_2 bilayer passivation2011
- Author(s)
  H.Nakashima, Y.Iwamura, K.Sakamoto, D.Wang, K.Hirayama, K.Yamamoto, H.Yang
- Journal Title
  
  Appl.Phys.Lett
  
  Volume: Vol.98, No.25 Issue: 25
- DOI
  10.1063/1.3601480
- NAID
  120004979402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
[Journal Article] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011
- Author(s)
  T. Yamanaka, K. Yamamoto, K. Sakamoto, H. Yang, D. Wang, H. Nakashima
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  
  Volume: なし Pages: 889-890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760017
[Journal Article] Effect of Al_2O_3 Deposition and Subsequent Annealing on Passivation of Defectsin Ge-rich SiGe-on-Insulator2011
- Author(s)
  H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
- Journal Title
  
  Key Engineering Material
  
  Volume: Vol.470 Pages: 79-84
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO_2/GeO_2 bi-layer passivation combined with the subsequent SiO_2-depositions using magnetron sputtering2011
- Author(s)
  K.Hirayama, K.Yoshino, R.Ueno, Y.Iwamura, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Solid State Electronics
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011
- Author(s)
  T.Yamanaka, K.Yamamoto, K.Sakamoto, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)
  
  Pages: 889-890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator2011
- Author(s)
  D.Wang, K.Yamamoto, H.Gao, H.Yang, H.Nakashima
- Journal Title
  
  The Electrochemical Society Transactions Vol.34
  
  Pages: 1117-1122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing2010
- Author(s)
  H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3 Pages: 71302-3
- NAID
  10026495131
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Defect evaluation and control of SiGe-on-insulator substrate fabricated by the Gecondensation technique2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Proceeding of The Forum on the Science and Technology of Silicon Materials 2010
  
  Pages: 438-448
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Microphotoluminescence evaluation of local for freestanding Si membranes with SiN deposition2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Proceeding of The Forum on the Science and Technology of Silicon Materials 2010
  
  Pages: 411-420
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] 325 nm-laser-excited micro- hotoluminescence for strained Si film2010
- Author(s)
  D.Wang, H.Yang, T.Kitamura, H.Nakashima
- Journal Title
  
  Thin Solid Films Vol.518
  
  Pages: 2470-2473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Microphotoluminescence evaluation of local for freestanding Si membranes with SiN deposition2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Proceeding of The Forum on the Science and Technology of Silicon Materials
  
  Pages: 411-420
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Influence of freely diffusing excitons on the photoluminescence spectrum of Sithick films with depth distribution of strain2010
- Author(s)
  D.Wang, H.Yang, T.Kitamura, H.Nakashima
- Journal Title
  
  Journal of Applied Physics Vol.107, No.3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Materials Science and Engineering A Vol.527
  
  Pages: 6633-6637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-ThinSiO_2/GeO_2 Bi-Layer Passivation2010
- Author(s)
  K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Extended Abstracts of the 2010 Interational Conference on Solid State Devices and Materials (SSDM2010)
  
  Pages: 205-206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Defect characterization and control for Site-on-insulator2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Journal Title
  
  Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
  
  Volume: I12_08(Invited) Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] 325 nm-laser-excited micro-photoluminescence for strained Si film2010
- Author(s)
  D.Wang, H.Yang, T.Kitamura, H.Nakashima
- Journal Title
  
  Thin Solid Films vol.518
  
  Pages: 2470-2473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 interlayers2010
- Author(s)
  K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Thin Solid Films Vol. 518
  
  Pages: 2505-2508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain2010
- Author(s)
  D.Wang, H.Yang, T.Kitamura, H.Nakashima
- Journal Title
  
  Journal of Applied Physics Vol.117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Measurement of Strain in Freestanding Si/Si_xN_y Membrane by Convergent Beam Electron Diffraction and Finite Element Method2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: Vol.49 Pages: 90208-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima, K.Hiravama, S.Kojima, S.Ikeura
- Journal Title
  
  Thin Solid Films Vol. 518
  
  Pages: 2342-2345
- NAID
  120005289466
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Thin Solid Films Vol.518
  
  Pages: 6787-6791
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Strain distribution in freestanding Si/Si_xN_y membranes studied by transmission electron microscopy2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.518 Pages: 6787-6791
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing2010
- Author(s)
  H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima
- Journal Title
  
  App. Phys. Express
  
  Volume: Vol.3 Pages: 71302-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Microstructure and strain distribution in freestanding Si membrane strained by Si_xN_y deposition2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Journal Title
  
  Materials Science and Engineering A
  
  Volume: Vol.527 Pages: 6633-6637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760011
[Journal Article] Hole-Mobility Enhancement in Ultrathin Strained Si_<0.5>Ge_<0.5>-on-Insulator Fabricated by Ge Condensation Technique2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
  
  Volume: O05_06 Pages: 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation techniaue2009
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Applied Physics Letters Vol. 95, No.12
  
  Pages: 122103-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Optical and Electrical Characterization of Defects in SiGe-on-Insulator2009
- Author(s)
  H.Nakashima, D.Wang, H.Yang
- Journal Title
  
  The Electrochemical Society Transactions Vol. 25, No.7
  
  Pages: 99-114
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation2009
- Author(s)
  D.Wang, H.Nakashima
- Journal Title
  
  Solid-State Electronics Vol. 53, No.8
  
  Pages: 841-849
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Journal Article] Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique2009
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Journal Title
  
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  
  Pages: 396-397
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Measurement of Fowler-Nordheim tunneling barrier height in Ge-MIS structures2023
- Author(s)
  Y. J. Feng, K. Yamamoto, A. Honda, N. Shimizu, D. Wang
- Organizer
  The 8th Asia Applied Physics Conference (2023 年(令和5年度) 応用物理学会九州支部学術講演会)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03927
[Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019
- Author(s)
  K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] 3C-SiC MOSFETの閾値電圧制御に向けたSiO2/Al2O3ゲートスタック中の固定電荷・界面ダイポールの解析2019
- Author(s)
  岡龍誠、山本圭介、王冬、中島寛、菱木繁臣、川村啓介
- Organizer
  第11回半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
- Organizer
  236th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices2019
- Author(s)
  K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  H. Nakashima(Invited), W.-C. Wen, K. Yamamoto, D. Wang
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタとn-MOSFET動作2019
- Author(s)
  山本圭介、岡龍誠、王冬、中島寛、菱木繁臣、川村啓介
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC2019
- Author(s)
  R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019
- Author(s)
  井芹健人、温偉辰、山本圭介、王冬、中島寛
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes2019
- Author(s)
  D. Wang, T. Maekura, K. Yamamoto, H. Nakashima
- Organizer
  TACT 2019 International Thin Film Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタの固定電荷と界面ダイポール解析2019
- Author(s)
  岡龍誠、山本圭介、王冬、中島寛、菱木繁臣、川村啓介
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] 遷移金属窒化物を用いた金属/Geコンタクトの障壁制御2018
- Author(s)
  山本圭介、光原昌寿、王冬、中島寛
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks2018
- Author(s)
  H. Nakashima, W.-C. Wen, K. Yamamoto and D. Wang
- Organizer
  11th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator2018
- Author(s)
  K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di
- Organizer
  2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation2018
- Author(s)
  W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang and H. Nakashima
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application2018
- Author(s)
  Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] GOI基板を用いた非対称ー金属／Ge／金属構造光素子の作製・特性評価2018
- Author(s)
  後藤太希、前蔵貴行、仲江航平、山本圭介、中島寛、王冬、Miao Zhang、Zhongying Xue、Zenfeng Di
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] 電子ビーム蒸着によるGe上へのY酸化物系ゲート絶縁膜形成2018
- Author(s)
  秋山健太郎、井芹健人、温偉辰、山本圭介、王冬、中島寛
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Smart-Cut法を用いて作製したGe-on-Insulatorの極性変化2018
- Author(s)
  仲江航平、薛飛達、山本圭介、王冬、中島寛、Miao Zhang、Zhongying Xue、Zenfeng Di
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate2018
- Author(s)
  T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang
- Organizer
  2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks2018
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  12th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application2018
- Author(s)
  K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
- Organizer
  2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes2018
- Author(s)
  D. Wang, T. Maekura, K. Yamamoto, H. Nakashima
- Organizer
  Collaborative Conference on Materials Research (CCMR) 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation2018
- Author(s)
  K. Yamamoto, K. Akiyama, K. Iseri, W.-C. Wen, D. Wang, and H. Nakashima
- Organizer
  12th International Workshop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Border trap characterization using deep-level transient spectroscopy for GeO2/Gegate stacks grown by thermal oxidation and plasma oxidation2018
- Author(s)
  Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
- Organizer
  シリコン材料の科学と技術フォーラム2018
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy2017
- Author(s)
  W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy2017
- Author(s)
  W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2017 International Conference on Solid State Devices and Materiaals (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer2017
- Author(s)
  H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
- Organizer
  232nd ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構2017
- Author(s)
  永冨雄太、織田知輝、坂口大成、山本圭介、王冬、中島寛
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調(Ⅱ)2017
- Author(s)
  板屋航、仲江航平、山本圭介、王冬、中島寛
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017
- Author(s)
  T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks2017
- Author(s)
  W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] メタルS/D型 Ge n-MOSFET のチャネル移動度の基板濃度依存性2017
- Author(s)
  坂口大成、秋山健太郎、山本圭介、王冬、中島寛
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2017
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Organizer
  10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2017-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs2017
- Author(s)
  T. Sakaguchi, K. Akiyama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2017 International Conference on Solid State Devices and Materiaals (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03237
[Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2017
- Author(s)
  岡本隼人、山本圭介、王冬、中島寛
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価2017
- Author(s)
  前蔵貴行、本山千里、田中健太郎、山本圭介、中島寛、王冬
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017
- Author(s)
  T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
- Organizer
  10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2016
- Author(s)
  岡本隼人、山本圭介、王冬、中島寛
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ：新潟コンベンションセンター
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016
- Author(s)
  山本圭介、岡本隼人、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016
- Author(s)
  Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016
- Author(s)
  山本圭介、岡本　隼人、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016
- Author(s)
  Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失2016
- Author(s)
  永冨雄太、建山知輝、坂口大成、山本圭介、王冬、中島寛
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ：新潟コンベンションセンター
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016
- Author(s)
  H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2016 International Conference on Solid State Devices and Materiaals (SSDM2016)
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan
- Year and Date
  2016-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2gate stacks2016
- Author(s)
  Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
- Place of Presentation
  Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性2016
- Author(s)
  板屋航, 岡本隼人, 山本圭介, 王冬, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016
- Author(s)
  永冨雄太、田中慎太郎、建山知輝、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/drain structure2016
- Author(s)
  T. Tateyama, Y. Nagatomi, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016
- Author(s)
  建山知輝、永冨雄太、田中慎太郎、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響2016
- Author(s)
  田中健太郎, 前蔵貴行, 本山千里, 王冬, 山本圭介, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-04
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016
- Author(s)
  Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Characterization of Ge Tunnel FET with Metal/Ge Junction2016
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Organizer
  7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
- Place of Presentation
  Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
- Year and Date
  2016-06-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016
- Author(s)
  永冨雄太、田中慎太郎、建山知輝、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016
- Author(s)
  建山知輝、永冨雄太、田中慎太郎、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構2016
- Author(s)
  坂口大成, 建山知輝, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation2016
- Author(s)
  W.-C. Wen, Y. Nagatomi, L. Zhao, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016
- Author(s)
  H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
- Organizer
  JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration"
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016
- Author(s)
  T. Maekura, C. Motoyama, K. Yamamoto, H. Nakashima, and D. Wang
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes2016
- Author(s)
  C. Motoyama, T. Maekura, K. Tanaka, D. Wang, K. Yamamoto, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Fuxuan Hotel, Shanghai, China
- Year and Date
  2015-10-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2015-10-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] SiO2/GeO2/GeゲートスタックにおけるAl導入効果2015
- Author(s)
  田中慎太郎、建山知輝、永冨雄太、山本圭介、王冬、中島寛
- Organizer
  2015年応用物理学会九州支部学術講演会
- Place of Presentation
  琉球大学
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015
- Author(s)
  永冨雄太, 田中慎太郎, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  シリコン材料・デバイス研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015
- Author(s)
  Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
- Place of Presentation
  Sapporo Convention Center, Japan
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29
- Invited
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015
- Author(s)
  永冨雄太、長岡裕一、田中慎太郎、山本圭介、王冬、中島寛
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2015-01-30
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  K Yamamoto, R. Noguchi, ,M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
- Organizer
  9th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015
- Author(s)
  永冨雄太、田中慎太郎、長岡裕一、山本圭介、王冬、中島寛
- Organizer
  シリコン材料・デバイス研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  The 2nd International Conference & Exhibition for Nanopia
- Place of Presentation
  Changwon Exhibition Convention Center, Gyeongsangnam-do, Korea
- Year and Date
  2015-11-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015
- Author(s)
  Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非対称-金属/Ge/金属構造を有する光素子の試作と特性評価2015
- Author(s)
  前蔵貴行, 山本圭介, 王冬, 中島寛
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015
- Author(s)
  Takayuki Maekura, Dong Wang, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
- Place of Presentation
  Sapporo Convention Center, Japan
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015
- Author(s)
  D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Shanghai, China
- Year and Date
  2015-10-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015
- Author(s)
  Y. Nagatomi, Y. Nagaoka, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai
- Year and Date
  2015-01-30
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, and M. Nishida
- Organizer
  9th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015
- Author(s)
  D. Wang, T. Maekura,K. Yamamoto, and H. Nakashima
- Organizer
  9th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Shanghai, China
- Year and Date
  2015-10-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic Devices2015
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Organizer
  The 2nd International Conference & Exhibition for Nanopia
- Place of Presentation
  Changwon, Korea,
- Year and Date
  2015-11-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減の検討2015
- Author(s)
  建山知輝、田中慎太郎、永冨雄太、山本圭介、王冬、中島寛
- Organizer
  2015年応用物理学会九州支部学術講演会
- Place of Presentation
  琉球大学
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 非対称金属構造を有するGeダイオードの発光特性および受光特性2015
- Author(s)
  本山千里、前蔵貴行、王冬、山本圭介、中島寛
- Organizer
  2015年応用物理学会九州支部学術講演会
- Place of Presentation
  琉球大学
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 非対称金属構造を有するGeダイオードの金属コンタクトおよび表面パッシベーション方法の違いによる発光特性・受光特性の改善2015
- Author(s)
  前蔵貴行、本山千里、王冬、山本圭介、中島寛
- Organizer
  2015年応用物理学会九州支部学術講演会
- Place of Presentation
  琉球大学
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2015-01-29
- Invited
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015
- Author(s)
  永冨雄太, 長岡裕一, 田中慎太郎, 山本圭介, 王冬, 中島寛
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015
- Author(s)
  T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
- Place of Presentation
  Hokaido
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 極薄EOTを有するn-Ge上high-kゲートスタックの形成と評価2015
- Author(s)
  岡本隼人、山本圭介、王冬、中島寛
- Organizer
  2015年応用物理学会九州支部学術講演会
- Place of Presentation
  琉球大学
- Year and Date
  2015-12-05
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015
- Author(s)
  Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Fuxuan Hotel, Shanghai, China
- Year and Date
  2015-10-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015
- Author(s)
  S. Tanaka, Y. Nagatomi,Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM2015)
- Place of Presentation
  Hokaido
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge2014
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
- Organizer
  JSPS Core-to-Core Program,“Atomically Controlled Processsing for Ultralarge Scale Integration”
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2014-11-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014
- Author(s)
  山本　圭介、王　冬、中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  226th ECS Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-07
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] n形3C-SiCへのゲートスタックの低温形成2014
- Author(s)
  山本裕介, 村山亮介, 山本圭介, 王冬, 中島寛, 菱木繁臣, 川村啓介
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2 ECRプラズマ酸化2014
- Author(s)
  長岡　裕一、永冨　雄太、山本　圭介、王　冬、中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明（II）2014
- Author(s)
  山本圭介、光原昌寿、吹留佳祐、野口竜太郎、西田稔、王冬、中島寛
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014
- Author(s)
  田中慎太郎, 長岡裕一, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  2014年応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Effect of Kr/O2 ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron　and Hole Barrier Heights2014
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Organizer
  7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”
- Place of Presentation
  Sendai
- Invited
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014
- Author(s)
  K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2ECRプラズマ酸化効果2014
- Author(s)
  長岡裕一, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014
- Author(s)
  田中慎太郎、長岡裕一、永冨雄太、山本圭介、王冬、中島寛
- Organizer
  2014年応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge2014
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, and M. Nishida
- Organizer
  JSPS Core-to Core Program
- Place of Presentation
  Lueven Belgium
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  226th ECS Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-07
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014
- Author(s)
  山本圭介, 王冬, 中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] バルクGe発光素子のデバイス構造による発光効率の変化2014
- Author(s)
  前蔵貴行, 山本圭介, 王冬, 中島寛
- Organizer
  2014年応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-07
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014
- Author(s)
  永冨　雄太、長岡　裕一、山本　圭介、王冬、中島寛
- Organizer
  シリコン材料・デバイス（SDM）研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014
- Author(s)
  Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014
- Author(s)
  永冨雄太, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (応用物理学会, シリコンテクノロジー分科会との合同開催)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成2014
- Author(s)
  永冨雄太、長岡裕一、山本圭介、王冬、中島寛
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure2014
- Author(s)
  Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and2014
- Author(s)
  K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタックへのHf導入によるメタル・ソース／ドレイン Ge p-MOSFETの高移動度化2013
- Author(s)
  山本　圭介、佐田隆宏、王冬、中島寛
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Al/Ti/Snを用いたp形4H-SiCへのオーミックコンタクトの低温形成2013
- Author(s)
  畑山紘太、山本圭介、王冬、中島寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer2013
- Author(s)
  D. Wang, Y. Nagatomi, S. Kojima, S. Kamezawa, K. Yamamoto, and H. Nakashima
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Al2O3/Ge構造形成後のECRプラズマ酸化による固定電荷密度の制御2013
- Author(s)
  長岡　裕一、永冨　雄太、山本　圭介、王　冬、中島　寛
- Organizer
  2013年応用物理学会九州支部学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Contact Formations for Schottky Source/Drain Ge-CMOS2013
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration"
- Place of Presentation
  6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration"
- Year and Date
  2013-02-23
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] HfGeメタル・ソース/ドレインGe p-MOSFETの高移動度化2013
- Author(s)
  佐田隆宏、山本圭介、王冬、中島寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明2013
- Author(s)
  山本圭介、光原昌寿、西田稔、王冬、中島寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 極薄GeOX界面層を有するY2O3/Ge ゲートスタックの低温形成2013
- Author(s)
  永冨雄太、小島秀太、亀沢翔、山本圭介、王冬、中島寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Ge-MOSキャパシタの正確な界面準位密度評価:一定温度DLTS2013
- Author(s)
  中島寛、王冬、山本圭介
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts2013
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Organizer
  224th ECS Meeting
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Y2O3ゲートTiNメタル・ソース／ドレイン型Ge n-MOSFETの作製2013
- Author(s)
  亀沢　翔、山本　圭介、王　冬、中島　寛
- Organizer
  2013年応用物理学会九州支部学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact2013
- Author(s)
  K. Yamamoto, T. Sada, H. Yang, D. Wang, and H. Nakashima
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-25249035
[Presentation] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers2012
- Author(s)
  S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs2012
- Author(s)
  H. Nakashima, K. Yamamoto, H. Yang, and D. Wang
- Organizer
  222nd ECS Meeting
- Place of Presentation
  Hawaii, USA(招待講演)
- Year and Date
  2012-10-09
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiN/Ge コンタクトに於けるフェルミレベルピンニング変調とMOS デバイス応用2012
- Author(s)
  山本圭介、井餘田昌俊、王冬、中島寛
- Organizer
  応用物理学会分科会シリコンテクノロジー:「ゲートスタック研究の進展-不純物分布および接合界面制御を中心に」
- Place of Presentation
  名古屋大学
- Year and Date
  2012-06-21
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain2012
- Author(s)
  T. Sada, K. Yamamoto, H. Yang, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 整流性TiN/p-Geコンタクトに於ける表面パッシベーションの重要性2012
- Author(s)
  山本圭介、王冬、中島寛
- Organizer
  2012年秋季第73 回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 低電子障壁TiN/Si コンタクトの形成とback-gate MOSFET への応用2012
- Author(s)
  朝川幸二朗、山本圭介、王冬、中島寛
- Organizer
  2012年秋季第73 回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 低障壁TiN/n-Geコンタクトの形成とコンタクト抵抗評価2012
- Author(s)
  山本圭介、原田健司、楊海貴、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back- Gate MOSFET2012
- Author(s)
  K. Asakawa, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 低障壁TiN/n-Ge コンタクトの形成とコンタクト抵抗評価2012
- Author(s)
  山本圭介、原田健司、楊海貴、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] ウェットエッチングによるSin-MOSFET のデバイス特性の変化2012
- Author(s)
  村山亮介、朝川幸二朗、山本圭介、王冬、中島寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Year and Date
  2012-12-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] p形4H-SiCへのAl/Ti/Si オーミックコンタクトの低温形成2012
- Author(s)
  畑山紘太、山本圭介、王冬、中島寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Year and Date
  2012-12-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 極薄GeO2-IL を有するAl2O3/Ge ゲートスタックの形成2012
- Author(s)
  永冨雄太、小島秀太、山本圭介、王冬、中島寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Year and Date
  2012-12-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] リセスチャネルTiN メタル・ソース/ドレイン型Ge n-MOSFETの作製2012
- Author(s)
  亀沢翔、山本圭介、王冬、中島寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Year and Date
  2012-12-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] ショットキーソース/ドレインGe p-MOSFETの作製と電気的特性2011
- Author(s)
  佐田隆宏、楊海貴、山本圭介、王冬、中島寛
- Organizer
  2011年応用物理学会九州支部学術講演会
- Place of Presentation
  鹿児島大学
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 極薄ゲート絶縁膜を有するGe-MOSFET 作製のための表面保護プロセスの検討2011
- Author(s)
  高橋涼介、山中武、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年応用物理学会九州支部学術講演会
- Place of Presentation
  鹿児島大学
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Photoluminescence observation of defects for uniaxially strained Si-on-insulator2011
- Author(s)
  D. Wang, K. Yamamoto, H. Gao, H. Yang, H. Nakashima
- Organizer
  7th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Ge-MOSキャパシタに於けるTiNメタルゲート形成後の熱処理効果2011
- Author(s)
  岩村義明、坂本敬太、平山佳奈、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 極薄ゲート絶縁膜を有するGe-MOSFET作製のための表面保護プロセスの検討2011
- Author(s)
  高橋涼介、山中武、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年応用物理学会九州支部学術講演会
- Place of Presentation
  鹿児島大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 2層パッシベーション法で作製したGe-MOSFETの電気特性2011
- Author(s)
  山本圭介、上野隆二、山中武、平山佳奈、楊海貴、王冬、中島寛
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011
- Author(s)
  H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang
- Organizer
  E-MRS 2011 Spring Meeting, Symposium I, Transport and photonics in Si-based nanodevices(招待講演)
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011
- Author(s)
  T.Yamanaka,K.Yamamoto, K.Sakamoto, H.Yang, D.Wang, H.Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  WINC AICHI (Nagoya)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Ge上へのZrとSiO_2堆積によるhigh-k/Geゲートスタックの形成2011
- Author(s)
  小島秀太、坂本敬太、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年応用物理学会九州支部学術講演会
- Place of Presentation
  鹿児島大学
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011
- Author(s)
  H.Nakashima, K.Hirayama, K.Yamamoto, H.Yang, D.Wang
- Organizer
  E-MRS 2011 Spring Meeting, Symposium I, Transport and photonics in Si-based nanodevices, 17-6
- Place of Presentation
  Nice, France(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiNゲートGe-MOSキャパシタのPMAによる窒素導入効果2011
- Author(s)
  坂本敬太、岩村義明、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiNゲートGe-MOSキャパシタのPMAによる窒素導入効果2011
- Author(s)
  坂本敬太、岩村義明、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 1.0nm EOTを有するhigh-k/Geゲートスタックの形成2011
- Author(s)
  小島秀太、坂本敬太、山本圭介、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiN/SiO2/GeO2/Geゲートスタックを有するGe n-MOSFETの電気的特性2011
- Author(s)
  山中武、山本圭介、上野隆二、坂本敬太、楊海貴、王冬、中島寛
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Defect Evaluation by Photoluminescence for Uniaxially Strained Si and Strained Si-on-insulator2011
- Author(s)
  D.Wang, K.Yamamoto, H.Gao, H.Yang, H.Nakashima
- Organizer
  China Semiconductor Technology International Conference 2011
- Place of Presentation
  Shanghai, China
- Year and Date
  2011-03-14
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGelayer thickness and Ge fraction2011
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  7^<th> Int.Conf.on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 極薄ゲート絶縁膜を有するGe-MOSFET作製のための表面保護プロセスの検討2011
- Author(s)
  高橋涼介、山中武、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年応用物理学会九州支部学術講演会
- Place of Presentation
  鹿児島大学
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation2011
- Author(s)
  K. Sakamoto, Y. Iwamura, K. Yamamoto, H. Yang, D. Wang, H. Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] "Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGe layer thickness and Ge fraction2011
- Author(s)
  H. Yang, D. Wang, H. Nakashima
- Organizer
  7^<th> Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiN ゲートGe-MOS キャパシタのPMA による窒素導入効果2011
- Author(s)
  坂本敬太、岩村義明、山本圭介、楊海貴、王冬、中島寛
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Alleviation of Fermi-level pinning at metal/Ge interface by direct deposition of TiN on Ge surface2011
- Author(s)
  M.Iyota, K.Yamamoto, D.Wang, H.Yang, H.Nakashima
- Organizer
  7^<th> Int.Conf.on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High Performance Ge MOSFETS with Bilayer-Passivated MOS interface2011
- Author(s)
  K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima
- Organizer
  7th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] High-Electron- Mobility Ge n-MOSFET with TiN Metal Gate2011
- Author(s)
  T. Yamanaka, K. Yamamoto, K. Sakamoto, H. Yang, D. Wang, H. Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Alleviation of Fermi-level pinning at metal/Ge interface by direct deposition of TiN on Ge surface2011
- Author(s)
  M. Iyota, K. Yamamoto, D. Wang, H. Yang, H. Nakashima
- Organizer
  7th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO_2/GeO_2 Bilayer by Nitrogen Incorporation2011
- Author(s)
  K.Sakamoto, Y.Iwamura, K.Yamamoto, H.Yang, D.Wang, H.Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  WINC AICHI (Nagoya)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High Performance Ge MOSFETS with Bilayer-Passivated MOS interface2011
- Author(s)
  K.Yamamoto, R.Ueno, T.Yamanaka, K.Hirayama, H.Yang, D.Wang, H.Nakashima
- Organizer
  7^<th> Int.Conf.on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiN/SiO_2/GeO_2/Geゲートスタックを有するGe n-MOSFETの電気的特性2011
- Author(s)
  山中武、山本圭介、上野隆二、坂本敬太、楊海貴、王冬、中島寛
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 低障壁TiN/n-Geコンタクトの形成とコンタクト抵抗評価2011
- Author(s)
  山本圭介、原田健司、楊海貴、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiNショットキー・ソース/ドレインGe n-MOSFETの作製2011
- Author(s)
  山本圭介、山中武、原田健司、佐田隆宏、坂本敬太、小島秀太、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiN/SiO2/GeO2/Ge ゲートスタックを有するGe n-MOSFET の電気的特性2011
- Author(s)
  山中武、山本圭介、上野隆二、坂本敬太、楊海貴、王冬、中島寛
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011
- Author(s)
  T. Yamanaka, K. Yamamoto, K. Sakamoto, H. Yang, D. Wang, H. Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  WINC AICHI(Nagoya)
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiN堆積によるn-Ge基板へのオーミックコンタクトの形成2011
- Author(s)
  井餘田昌俊、楊海貴、王冬、中島寛
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] HfGe_xショットキー・ソース/ドレインGe p-MOSFETの作製2011
- Author(s)
  山本圭介、佐田隆宏、山中武、坂本敬太、小島秀太、楊海貴、王冬、中島寛
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011
- Author(s)
  H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang
- Organizer
  E-MRS 2011 Spring Meeting
- Place of Presentation
  Nice, France
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] High-quality gate-stack formation on Ge and defect termination at the interface ( 招待講演)2011
- Author(s)
  H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang
- Organizer
  European Materials Research Society 2011 Spring Meeting
- Place of Presentation
  Nice, France
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin　SiO2/GeO2 Bilayer by Nitrogen Incorporation2011
- Author(s)
  K. Sakamoto, Y. Iwamura, K. Yamamoto, H. Yang, D. Wang, H. Nakashima
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  WINC AICHI(Nagoya)
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Defect characterization and control for Site-on-insulator2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Organizer
  The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
- Place of Presentation
  Shanghai, China(Invited)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Microstructure and strain distribution in strained freestandeing Si membrane2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Organizer
  The 17th International Microscopy Congress
- Place of Presentation
  Brazil
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] 2層パッシベーションで作製したMOS界面を有するGe-nMOSFETの電気的特性2010
- Author(s)
  山中武、山本圭介、上野隆二、平山佳奈、岩村義明、楊海貴、王冬、中島寛
- Organizer
  2010年応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学
- Year and Date
  2010-11-28
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Microstructure and strain distribution in strained freestandeing Si membrane2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Organizer
  The 17^<th> International Microscopy Congress (IMC17)
- Place of Presentation
  Brazil
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Ge-MOS構造に於ける高品質界面層の形成2010
- Author(s)
  上野隆二、平山佳奈、岩村義明、吉野圭介、楊海貴、王冬、中島寛
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Effect of Al_2O_3 deposition and the subsequent annealing on passivation of defectsin Ge-rich Site-on-insulator2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  東京工業大学
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] TiN/ZrSiO_x/GeO_2/Geゲートスタックの形成2010
- Author(s)
  岩村義明、平山佳奈、上野隆二、楊海貴、王冬、中島寛
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Fabrication of high quality Ge-MOS capasitor by ultra-thin SiO_2/GeO_x bi-layer passivation combined with ECR SiO_2-deposition2010
- Author(s)
  K.Hirayama, K.Yoshino, R.Ueno, Y.Iwamura, H.Yang, D.Wang, H.Nakashima
- Organizer
  5^<th> International SiGe Technology and Device Meeting
- Place of Presentation
  Stockholm, Sweden
- Year and Date
  2010-05-25
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Defect evaluation and control of Site-on-insulator substrate fabricated by the Gecondensation technique2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  The Forum on the Science and Technology of Silicon Materials
- Place of Presentation
  岡山大学
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Effective Passivation of defects in Ge-rich SiGe-on-insulator substrates by Al_2O_3 deposition and the subsequent post-annealing2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  5^<th> International SiGe Technology and Device Meeting
- Place of Presentation
  Stockholm, Sweden
- Year and Date
  2010-05-25
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO_2/GeO_2 Bi-Layer Passivation2010
- Author(s)
  K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM2010)
- Place of Presentation
  東京大学
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Hole-Mobility Enhancement in Ultrathin Strained Si_<0.5>Ge_<0.5>-on-Insulator Fabricated by Ge Condensation Technique2010
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 酸化濃縮Site-On-Insulator基板の欠陥評価と制御2010
- Author(s)
  中島寛、楊海貴、王冬
- Organizer
  日本学術振興会「結晶加工と評価技術第145委員会」第124回研究会
- Place of Presentation
  明治大学
- Year and Date
  2010-10-19
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Microstructures and defects in freestanding Si membranes in Strained Freestanding Si Membranes2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Organizer
  第52回日本顕微鏡学会九州支部総会
- Place of Presentation
  九州大学
- Year and Date
  2010-12-24
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Microphotoluminescence evaluation of local for freestanding Si membranes with SiN deposition2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  岡山大学
- Year and Date
  2010-11-29
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] SiN膜堆積によるSi基板への局所歪み導入と移動度評価手法の構築2010
- Author(s)
  原田健司、山本圭介、王冬、中島寛
- Organizer
  2010年応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Micro photoluminescence evaluation of local for freestanding Si membranes with SiN deposition2010
- Author(s)
  D.Wang, H.Yang, H.Nakashima
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  岡山大学
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Ge上への極薄SiO_2/GeO_2界面層の形成2010
- Author(s)
  平山佳奈、吉野圭介、岩村義明、上野隆二、楊海貴、王冬、中島寛
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Al/TiN/ZrSiO_x/GeO_2/Geゲートスタックの形成2010
- Author(s)
  坂本敬太、平山佳奈、岩村義明、上野隆二、楊海貴、王冬、中島寛
- Organizer
  2010年応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学
- Year and Date
  2010-11-28
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Microstructures and defects in freestanding Si membranes in Strained Freestanding Si Membranes2010
- Author(s)
  H.Gao, K.Ikeda, S.Hata, H.Nakashima, D.Wang, H.Nakashima
- Organizer
  第52回日本顕微鏡学会九州支部総会
- Place of Presentation
  九州大学
- Year and Date
  2010-12-24
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Al_2O_3PDAによる酸化濃縮SiGe-On-Insulator基板中の欠陥制御2010
- Author(s)
  井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] SiN膜堆積によるSi基板への局所ひずみ導入と移動度評価手法の構築2010
- Author(s)
  原田健司、山本圭介、王冬、中島寛
- Organizer
  2010年応用物理学会九州支部学術講演会
- Place of Presentation
  九州大学
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 interlayers2009
- Author(s)
  K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] GeO_2/Ge界面のDLTS法による評価2009
- Author(s)
  上野隆二、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
- Organizer
  2009年応用物理学会九州支部学術講演会
- Place of Presentation
  熊本大学
- Year and Date
  2009-11-22
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique2009
- Author(s)
  H.Yang, D.Wang, H.Nakashima
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sendai, Japan
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009
- Author(s)
  吉野圭介、平山佳奈、上野隆二、楊海貴、王冬、中島寛
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 325nm-Laser Excited Micro-Photoluminescence for Strained Si Films2009
- Author(s)
  D.Wang, H.Gao, K.Ikeda, S.Hata, H.Nakashima, T.Kitamura H.Yang, H.Nakashima
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] 325 nm-Laser Excited Micro-Photolumines cence for Strained Si Films2009
- Author(s)
  D.Wang, H.Gao, K.Ikeda, S.Hata, H.Nakashima, T.KitamuraH.Yang, H.Nakashima
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-21760011
[Presentation] 酸化濃縮法で作成したSiGe-On-Insulator基板中の欠陥生成機構2009
- Author(s)
  池浦奨悟、楊海貴、王冬、中島寛
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 酸化濃縮法で作成したSiGe-On-lnsulator基板中の欠陥制御2009
- Author(s)
  井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
- Organizer
  2009年応用物理学会九州支部学術講演会
- Place of Presentation
  熊本大学
- Year and Date
  2009-11-22
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 界面層にHfGeNおよびGeO_2を有するhigh-k膜/Ge構造の形成と電気的評価2009
- Author(s)
  中島寛、平山佳奈、楊海貴、王冬
- Organizer
  応用物理学会分科会シリコンテクノロジー : 「ゲートスタック研究の進展 Ge系材料を中心に」
- Place of Presentation
  東京大学
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009
- Author(s)
  岩村義明、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
- Organizer
  2009年応用物理学会九州支部学術講演会
- Place of Presentation
  熊本大学
- Year and Date
  2009-11-22
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Optical and Electrical Characterizations of Defects in SiGe-on-Insulator(Invited)2009
- Author(s)
  H.Nakashima, D.Wang, H.Yang
- Organizer
  216^<th> Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] SiGe-on-Insulator基板形成時に発生する欠陥の電気・光学的評価2009
- Author(s)
  中島寛、楊海貴、王冬
- Organizer
  日本物理学会領域10格子欠陥・ナノ構造分科、第19回格子欠陥フォーラム「半導体格子欠陥の最前線」
- Place of Presentation
  九州大学
- Year and Date
  2009-09-24
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] Defect Control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2009
- Author(s)
  H.Yang, D.Wang, H.Nakashima, K.Hirayama, S.Kojima, S.Ikeura
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-21246054
[Presentation] 極薄GeO2-ILを有するAl2O3/Geゲートスタックの形成
- Author(s)
  永冨　雄太、小島　秀太、山本　圭介、王　冬、中島　寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiN/Geコンタクトに於けるフェルミレベルピンニング変調とMOSデバイス応用
- Author(s)
  山本　圭介、井餘田　昌俊、王　冬、中島　寛
- Organizer
  応用物理学会分科会シリコンテクノロジー：「ゲートスタック研究の進展－不純物分布および接合界面制御を中心に」
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] p形4H-SiCへのAl/Ti/Siオーミックコンタクトの低温形成
- Author(s)
  畑山　紘太、山本　圭介、王　冬、中島　寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Contact Formations for Schottky Source/Drain Ge-CMOS
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, and Dong Wang
- Organizer
  6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”
- Place of Presentation
  Tohoku University, Sendai, JAPAN
- Invited
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers
- Author(s)
  S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto International Conference Center, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Ge-MOSキャパシタの正確な界面準位密度評価：一定温度DLTS
- Author(s)
  中島　寛, 王　冬, 山本　圭介
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Al/Ti/Snを用いたp形4H-SiCへのオーミックコンタクトの低温形成
- Author(s)
  畑山　紘太, 山本　圭介, 王　冬, 中島　寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] HfGeメタル・ソース/ドレインGe p-MOSFETの高移動度化
- Author(s)
  佐田　隆宏, 山本　圭介, 王　冬, 中島　寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET
- Author(s)
  K. Asakawa, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto International Conference Center, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] ウェットエッチングによるSi n-MOSFETのデバイス特性の変化
- Author(s)
  村山　亮介、朝川　幸二朗、山本　圭介、王　冬、中島　寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 低電子障壁TiN/Siコンタクトの形成とback-gate MOSFETへの応用
- Author(s)
  朝川　幸二朗、山本　圭介、王　冬、中島　寛
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain
- Author(s)
  T. Sada, K. Yamamoto, H. Yang, D. Wang, and H. Nakashima
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto International Conference Center, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs
- Author(s)
  H. Nakashima, K. Yamamoto, H. Yang, and D. Wang
- Organizer
  222nd ECS Meeting
- Place of Presentation
  Honolulu, Hawaii, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 整流性TiN/p-Geコンタクトに於ける表面パッシベーションの重要性
- Author(s)
  山本　圭介、王　冬、中島　寛
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明
- Author(s)
  山本　圭介, 光原　昌寿, 西田　稔, 王　冬, 中島　寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] リセスチャネルTiN メタル・ソース/ドレイン型 Ge n-MOSFETの作製
- Author(s)
  亀沢　翔、山本　圭介、王　冬、中島　寛
- Organizer
  2012年応用物理学会九州支部学術講演会
- Place of Presentation
  佐賀大学
- Data Source
  KAKENHI-PROJECT-23760017
[Presentation] 極薄GeOX界面層を有するY2O3/Ge ゲートスタックの低温形成
- Author(s)
  永冨　雄太, 小島　秀太, 亀沢　翔, 山本　圭介, 王　冬, 中島　寛
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760017

1. NAKASHIMA Hiroshi (70172301)

# of Collaborated Projects: 4 results

# of Collaborated Products: 216 results
2. YAMAMOTO Keisuke (20706387)

# of Collaborated Projects: 3 results

# of Collaborated Products: 58 results
3. HAMAMOTO Kiichi (70404027)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. NISHIDA MINORU (90183540)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
5. MITSUHARA MASATOSHI (10514218)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. YANG Haigui

# of Collaborated Projects: 1 results

# of Collaborated Products: 66 results
7. HAMAYA Kohei

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
8. YANG H

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
9. 赤嶺大志

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Wang Dong 王 冬

WANG DONG 王 冬

WANG Dong 王 冬

Research Projects

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中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発

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Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発Principal Investigator

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Performance enhancement for Ge optical devices by applying local strain to Ge-On-Insulator substratesPrincipal Investigator

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Development of basic technology for Ge-CMOS integratable high-performance Ge optical devicesPrincipal Investigator

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Development of basic technology for achievement of metal source/drain Ge-CMOS device

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Development of local-strain technology for crystalline Ge and its application to transistorsPrincipal Investigator

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Formation of Strained Ge Channel and Material Evaluation for High performance ULSI

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Precise strain evaluation for high-performance bipolar transistorPrincipal Investigator

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[Journal Article] High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis2020

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[Journal Article] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut(TM) and Defect Elimination2019

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[Journal Article] Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate2019

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[Journal Article] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

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[Journal Article] Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation2019

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Wang Dong 王冬

WANG DONG 王冬

WANG Dong 王冬

[Journal Article] Direct band gap light emission and detection at room temperature in bulk germanium　diodes with HfGe/Ge/TiN structure2016