Ohta Akio 大田晃生

… Alternative Names

OHTA AKIO 大田晃生

OHTA Akio 大田晃生

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Researcher Number	10553620
Other IDs
Affiliation (Current)	2025: 福岡大学, 理学部, 准教授
Affiliation (based on the past Project Information) *help	2023 – 2025: 福岡大学, 理学部, 准教授 2017 – 2022: 名古屋大学, 工学研究科, 助教 2016: 名古屋大学, 工学研究科, 特任助教 2016: 名古屋大学, 工学研究科, 研究員 2015: 名古屋大学, 工学(系)研究科(研究院), 特任助教 … More 2013 – 2014: 名古屋大学, 工学(系)研究科(研究院), 研究員 2010: 広島大学, 先端物質科学研究科, 研究員 2009 – 2010: Hiroshima University, 大学院・先端物質科学研究科, 研究員 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 29:Applied condensed matter physics and related fields / Thin film/Surface and interfacial physical properties Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Transformative Research Areas, Section (II)
Keywords	Principal Investigator ゲルマニウム / 電子状態 / 二次元結晶 / 電子物性 / ゲルマネン / 表面偏析 / シリコン / シリコン酸化膜 / 絶縁膜技術 / メモリデバイス … More / 抵抗変化型メモリ / 偏析 / 極薄結晶 / 共晶反応 / 拡散・偏析 / 化学構造 / 結晶化 / 極薄膜 / サファイア / ゲルマネニウム / ポストグラフェン / 欠陥計測 / 不揮発性メモリ / 欠陥準位計測 / 光電子収率分光 / シリセン / IV族半導体 / 結晶成長 / 走査プローブ顕微鏡 / 原子間力顕微鏡 / Si酸化膜 / 金属ナノドット / 化学結合状態分析 / 光電子分光 … More Except Principal Investigator スーパーアトム / Si系量子ドット / コア／シェル / コア／シェル構造 / 量子ドット / 発光デバイス / Si量子ドット / 大気安定 / 絶縁膜上 / 結晶成長 / 薄膜 / 14族ナノシート / スーパーアトム構造 / Feシリサイドナノドット / CVD / コアシェル / 磁性ドット / LED Less

14族ナノシートの合成
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Nagoya University
ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御Principal Investigator
- Principal Investigator
  
  大田晃生
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Fukuoka University
  Nagoya University
Fabrication and Characterization of Super-atom-like Hybrid Nanodots for New Functional Devices
- Principal Investigator
  
  Seiichi Miyazaki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Formation of Ge two-dimensional crystals embedded into Si oxide and its device applicationPrincipal Investigator
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
Fabrication and Characterization of High-density Superatom-like Ge-core/Si-shell Quantum Dot for Light Emission
- Principal Investigator
  
  Makihara Katsunori
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Formation and Characterization of Germanium Two-Dimensional Crystal on Insulating SubstratePrincipal Investigator
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nagoya University
Self-organized Formation of Ge-based Two-dimensional Crystals and Control of Crystalline Structure and Electronic StatePrincipal Investigator
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
Growth and Characterization of Silicon-based Two-Dimensional MaterialsPrincipal Investigator
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical Properties
- Principal Investigator
  
  Seiichi Miyazaki
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Study on defect distribution and resistive switching behaviors of Si oxide thin filmsPrincipal Investigator
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Characterization of Resistive Switching Behaviors of Si-rich Oxide ReRAMsPrincipal Investigator
- Principal Investigator
  
  OHTA AKIO
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Characterization of Chemical Bonding Features of Ti Oxide based ReRAM and Their Impact on Resistance-Switching PropertiesPrincipal Investigator
- Principal Investigator
  
  OHTA Akio
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University

[Book] 「光電子分光(XPS, UPS)」、 2020版薄膜作製応用ハンドブック2020
- Author(s)
  宮﨑誠一, 大田晃生
- Total Pages
  14
- Publisher
  エヌ・ティー・エス
- ISBN
- Data Source
  KAKENHI-PROJECT-19H02169
[Book] 「共晶系で生じる析出現象を応用したIV族系ナノシート形成技術」、ポストグラフェン材料の創製と用途開発最前線 -二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術-2020
- Author(s)
  黒澤昌志, 大田晃生
- Total Pages
  10
- Publisher
  (株)エヌ・ティー・エス
- ISBN
- Data Source
  KAKENHI-PROJECT-18K19020
[Book] ポストグラフェン材料の創製と用途開発最前線～二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術、応用展開～第3章二次元ナノシートの成膜プロセシング技術第4節共晶系で生じる析出現象を応用したIV族系ナノシートの形成技術2020
- Author(s)
  (分担執筆) 黒澤昌志／大田　晃生 (監修者) 柚原淳司,
- Total Pages
  10
- Publisher
  (株)エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-19H02169
[Journal Article] Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control2024
- Author(s)
  Kimura Keisuke、Taoka Noriyuki、Ohta Akio、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP72-02SP72
- DOI
  10.35848/1347-4065/ad1777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Formation of germanene with free-standing lattice constant2023
- Author(s)
  Yuhara Junji、Matsuba Daiki、Ono Masaki、Ohta Akio、Miyazaki Seiichi、Araidai Masaaki、Takakura Sho-ichi、Nakatake Masashi、Le Lay Guy
- Journal Title
  
  Surface Science
  
  Volume: 738 Pages: 122382-122382
- DOI
  10.1016/j.susc.2023.122382
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04879, KAKENHI-PROJECT-23K22794
[Journal Article] Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure2023
- Author(s)
  Matsushita Keigo、Ohta Akio、Shibayama Shigehisa、Tokunaga Tomoharu、Taoka Noriyuki、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SG Pages: SG1007-SG1007
- DOI
  10.35848/1347-4065/acb65c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K22794, KAKENHI-PROJECT-21H04559
[Journal Article] Alignment control of self-assembling Si quantum dots2023
- Author(s)
  Imai Yuki、Tsuji Ryoya、Makihara Katsunori、Taoka Noriyuki、Ohta Akio、Miyazaki Seiichi
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 162 Pages: 107526-107526
- DOI
  10.1016/j.mssp.2023.107526
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Formation of Ultra-thin NiGe Film with Single Crystalline Phase and Smooth Surface2022
- Author(s)
  S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1027-SC1027
- DOI
  10.35848/1347-4065/acac6f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Effects of Cl Passivation on Al2O3/GaN Interface Properties2022
- Author(s)
  T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SA Pages: SA1002-SA1002
- DOI
  10.35848/1347-4065/ac73d9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Study on Silicidation Reaction of Fe-NDs with SiH42022
- Author(s)
  H. Furuhata, K. Makihara, Y. Shimura, S. Fujimori, Y. Imai, A. Ohta, N. Taoka, and S. Miyazaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 5 Pages: 55503-55503
- DOI
  10.35848/1882-0786/ac6727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Study on Electron Emission from Phosphorus d-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2022
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-5 Pages: 610-615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2022
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-6 Pages: 616-621
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2022
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-6 Pages: 616-621
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1059-SC1059
- DOI
  10.35848/1347-4065/acb1fd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-23K22794
[Journal Article] Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SD Pages: SD1012-SD1012
- DOI
  10.35848/1347-4065/ac61aa
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure2022
- Author(s)
  Matsushita Keigo、OHTA Akio、Taoka Noriyuki、Hayashi Shohei、MAKIHARA Katsunori、MIYAZAKI Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SH Pages: SH1012-SH1012
- DOI
  10.35848/1347-4065/ac5fbc
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02169, KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots2022
- Author(s)
  S. Honda, K. Makihara, N. Taoka, H. Furuhata, A. Ohta, D. Oshima, T. Kato, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SA Pages: SA1008-SA1008
- DOI
  10.35848/1347-4065/ac2036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-18KK0409
[Journal Article] Study on Electron Emission from Phosphorus d-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2022
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-5 Pages: 610-615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal2021
- Author(s)
  Ohta Akio、Yamada Kenzo、Sugawa Hibiki、Taoka Noriyuki、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBK05-SBBK05
- DOI
  10.35848/1347-4065/abdad0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21142, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Single germanene phase formed by segregation through Al(111) thin films on Ge(111)2021
- Author(s)
  Yuhara Junji、Muto Hiroaki、Araidai Masaaki、Kobayashi Masato、Ohta Akio、Miyazaki Seiichi、Takakura Sho-ichi、Nakatake Masashi、Lay Guy Le
- Journal Title
  
  2D Materials
  
  Volume: 8 Issue: 4 Pages: 045039-045039
- DOI
  10.1088/2053-1583/ac2bef
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142, KAKENHI-PROJECT-21K04879
[Journal Article] Segregation control for ultrathin Ge layer in Al/Ge(111) system2021
- Author(s)
  Ohta Akio、Kobayashi Masato、Taoka Noriyuki、Ikeda Mistuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SA Pages: SA1014-SA1014
- DOI
  10.35848/1347-4065/ac19ff
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21142
[Journal Article] Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core2020
- Author(s)
  Katsunori Makihara, Shuntaro Fujimori, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 120 Pages: 105250-105250
- DOI
  10.1016/j.mssp.2020.105250
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762
[Journal Article] Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy2020
- Author(s)
  A. Ohta, T. Imagawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SA Pages: SAAC02-SAAC02
- DOI
  10.35848/1347-4065/abb75b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-19H02169
[Journal Article] Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface2020
- Author(s)
  Kobayashi Masato、Ohta Akio、Kurosawa Masashi、Araidai Masaaki、Taoka Noriyuki、Simizu Tomohiro、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGK15-SGGK15
- DOI
  10.35848/1347-4065/ab69de
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K19020, KAKENHI-PROJECT-19H00762
[Journal Article] Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing2020
- Author(s)
  Sugawa Hibiki、Ohta Akio、Kobayashi Masato、Taoka Noriyuki、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 5 Pages: 505-511
- DOI
  10.1149/09805.0505ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02169
[Journal Article] Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing2020
- Author(s)
  H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Pages: 505-512
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Complex dielectric function of Si oxide as evaluated from photoemission measurements2020
- Author(s)
  Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SM Pages: SMMB04-SMMB04
- DOI
  10.35848/1347-4065/ab8c99
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-19H02169
[Journal Article] Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots by Using a Magnetic AFM Probe2020
- Author(s)
  J. Wu, H. Zhang, H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, S. Miyazaki
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Pages: 493-498
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode2020
- Author(s)
  T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Pages: 429-434
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] haracterization of photoluminescence from Si quantum dots with B δ-doped Ge core2020
- Author(s)
  akuya Maehara, Shuntaro Fujimori, Mitsuhisa Ikeda, Akio Ohta, Katsunori Makihara, and Seiichi Miyazaki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 120 Pages: 105215-105215
- DOI
  10.1016/j.mssp.2020.105215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762
[Journal Article] Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure2019
- Author(s)
  Fujimori Shuntaro、Makihara Katsunori、Ikeda Mitsuhisa、Ohta Akio、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SI Pages: SIIA15-SIIA15
- DOI
  10.7567/1347-4065/ab23f9
- NAID
  210000156653
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots2019
- Author(s)
  FUTAMURA Yuto、MAKIHARA Katsunori、OHTA Akio、IKEDA Mitsuhisa、MIYAZAKI Seiichi
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E102.C Issue: 6 Pages: 458-461
- DOI
  10.1587/transele.2018FUP0007
- NAID
  130007657491
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2019-06-01
- Language
  English
- Data Source
  KAKENHI-PROJECT-19H00762
[Journal Article] Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Nano-dots by Applying Constant Voltage & Constant Current2018
- Author(s)
  A. Ohta, Y. Kato, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection2018
- Author(s)
  K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 011305-011305
- DOI
  10.7567/apex.11.011305
- NAID
  210000136059
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis2018
- Author(s)
  Fujimura Nobuyuki、Ohta Akio、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FB07-04FB07
- DOI
  10.7567/jjap.57.04fb07
- NAID
  210000148862
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy2018
- Author(s)
  Yuto Futamura, Yuta Nakashima, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SA Pages: SAAE01-SAAE01
- DOI
  10.7567/1347-4065/aaeb38
- NAID
  210000135209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-17K18877
[Journal Article] Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core2018
- Author(s)
  Ryo Nagai, Kentaro Yamada, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 33 Pages: 124021-124021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties2017
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 183-187
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interface2017
- Author(s)
  N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CB04-04CB04
- DOI
  10.7567/jjap.56.04cb04
- NAID
  210000147552
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 85-88
- DOI
  10.1016/j.mee.2017.05.001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
[Journal Article] Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis2017
- Author(s)
  A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 80-84
- DOI
  10.1016/j.mee.2017.05.002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
[Journal Article] Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation2017
- Author(s)
  Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S1 Pages: 06GG07-06GG07
- DOI
  10.7567/jjap.56.06gg07
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Embedding of Ti Nanodots into SiO<sub>x</sub> and Its Impact on Resistance Switching Behaviors2017
- Author(s)
  Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E100.C Issue: 5 Pages: 468-474
- DOI
  10.1587/transele.E100.C.468
- NAID
  130005631611
- ISSN
  0916-8524, 1745-1353
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05520, KAKENHI-PROJECT-16H06083
[Journal Article] Characterization of Interfacial Dipoles at Dielectric Stacks by XPS Analysis2017
- Author(s)
  S. Miyazaki, A. Ohta, and N. Fujimura
- Journal Title
  
  Electrochemical Society (ECS) Transaction
  
  Volume: 80 Issue: 1 Pages: 229-235
- DOI
  10.1149/08001.0229ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties2017
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Material Science in Semiconductor Processing
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Ultrathin Si or Ge Films on Ag Formed by Metal-Induced Layer Exchange Method2016
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Journal Title
  
  Hyomen Kagaku
  
  Volume: 37 Issue: 8 Pages: 374-379
- DOI
  10.1380/jsssj.37.374
- NAID
  130005405053
- ISSN
  0388-5321, 1881-4743
- Language
  Japanese
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13943
[Journal Article] Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons2016
- Author(s)
  T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction
  
  Volume: 75 Issue: 8 Pages: 777-783
- DOI
  10.1149/07508.0777ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Evaluation of field emission properties from multiple-stacked Si quantum dots2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 68-71
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS2016
- Author(s)
  N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 8S2 Pages: 08PC06-08PC06
- DOI
  10.7567/jjap.55.08pc06
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core2016
- Author(s)
  K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 75 Pages: 695-700
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process2016
- Author(s)
  M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 8S1 Pages: 08NB07-08NB07
- DOI
  10.7567/jjap.55.08nb07
- NAID
  210000146974
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13943
[Journal Article] Study on electroluminescence from multiply-stacking valency controlled Si quantum dots2016
- Author(s)
  T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 48-51
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements2015
- Author(s)
  A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
- Journal Title
  
  IEICE TRANSACTIONS on Electronics
  
  Volume: E98-C
- NAID
  130005067745
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790058
[Journal Article] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots2015
- Author(s)
  R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki
- Journal Title
  
  Trans. of Mat. Res. Soc. Jpn
  
  Volume: in press
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02239
[Journal Article] Resistive Switching Characteristics of Si-rich Oxides with Embedding Ti Nanodots2015
- Author(s)
  Y. Kato, T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction
  
  Volume: 69 Issue: 10 Pages: 291-298
- DOI
  10.1149/06910.0291ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05520
[Journal Article] Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes2013
- Author(s)
  A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S Miyazaki
- Journal Title
  
  Electrochemical Society Transaction
  
  Volume: 58 Pages: 293-300
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25790058
[Journal Article] The Impact of Y Addition into TiO_2 on Electronic States and Resistive Switching Characteristics2011
- Author(s)
  Akio Ohta, Yuta Goto, Mohd Fairuz Kazalman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 50 to be published.
  
  Pages: 5-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21860062
[Journal Article] The Impact of Y Addition into TiO_2 on Electronic States and Resistive Switching Characteristics2011
- Author(s)
  Akio Ohta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: (掲載決定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21860062
[Journal Article] Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium -Yttrium mixed Oxide2011
- Author(s)
  Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics to be published.
- NAID
  210000071438
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Continuous growth of germanene and stanene lateral heterostructures on Ag(111)2024
- Author(s)
  J. Yuhara, T. Ogikubo, H. Shimazu, Y. Fujii, A. Ohta, M. Araidai, M. Kurosawa, G. Le Lay
- Organizer
  36th Symposium on Surface Science 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/SiGe(111)/Si(111)構造の化学構造分析 -熱処理によるSiおよびGe偏析-2024
- Author(s)
  酒井大希、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第29回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] 共晶系の偏析により形成した極薄Ge結晶のデバイスプロセスの検討2023
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Ge(111)上に偏析したGe薄膜の化学結合状態分析2023
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上への極薄ニッケルシリサイド膜形成―Si/Ni/Si初期構造における膜厚依存性―2023
- Author(s)
  木村圭佑、田岡紀之、西村駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Fe ナノドットへの SiH4照射によるβ-FeSi2ナノドットの高密度形成2023
- Author(s)
  斎藤陽斗、牧原克典、王子ロ（おうへんに路）、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Growth mechanism and vibrational properties of germanene fabricated through Ge segregation2023
- Author(s)
  Hiroki Hibino, Akio Ohta, Hiroyuki Kageshima, and Junji Yuhara
- Organizer
  Annual Meeting of the Japan Society of Vacuum and Surface Science 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Fe ナノドットへの SiH4照射によるβ-FeSi2ナノドットの高密度形成2023
- Author(s)
  斎藤陽斗、牧原克典、王子ロ（おうへんに路）、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上へのNiGe薄膜の形成とその電気特性及び電子状態2023
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Fe超薄膜へのSiH4照射によるシリサイド化反応制御2023
- Author(s)
  斎藤陽斗、牧原克典、王子ロ（おうへんに路）、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析2023
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上へのNiGe薄膜の形成とその電気特性及び電子状態2023
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si(111)構造の平坦性および結晶性制御と偏析による極薄Si層形成2023
- Author(s)
  酒井大希、大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 共晶系の偏析により形成した極薄Ge結晶のデバイスプロセスの検討2023
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上に形成したニッケルシリサイド薄膜の膜厚が表面形態・結晶相へ与える影響2023
- Author(s)
  木村圭佑、田岡紀之、西村駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si酸化膜上に形成したニッケルシリサイド層の膜厚が結晶相に与える影響2023
- Author(s)
  木村圭佑、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Ge(111)上に偏析したGe薄膜の化学結合状態分析2023
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Au(111)薄膜表面上に偏析したゲルマネンの構造転移2023
- Author(s)
  大野誠貴、大田晃生、宮﨑誠一、高倉将一、仲武昌史、Marco Minissale、Thierry Angot、Guy Le Lay、柚原淳司
- Organizer
  日本物理学会2023年秋季大会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Formation of SiO2 Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition2023
- Author(s)
  JIALUN CAI、NORIYUKI TAOKA、KATSUNORI MAKIHARA、AKIO OHTA、SEIICHI MIYAZAKI
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of SiO2 Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition2023
- Author(s)
  JIALUN CAI、NORIYUKI TAOKA、KATSUNORI MAKIHARA、AKIO OHTA、SEIICHI MIYAZAKI
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si酸化膜上に形成したニッケルシリサイド層の膜厚が結晶相に与える影響2023
- Author(s)
  木村圭佑、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上への極薄ニッケルシリサイド膜形成―Si/Ni/Si初期構造における膜厚依存性―2023
- Author(s)
  木村圭佑、田岡紀之、西村駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析2023
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/ケルビンプローブモードによる超高密度一次元連結Si系量子ドットの帯電状態評価2023
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/KFMによる熱酸化SOI基板上に自己組織化形成したSi量子ドットの局所帯電特性評価2023
- Author(s)
  今井友貴、牧原克典、山本裕司、Wen Wei-Chen、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Fe超薄膜へのSiH4照射によるシリサイド化反応制御2023
- Author(s)
  斎藤陽斗、牧原克典、王子ロ（おうへんに路）、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2023
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  13th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] SiO2上に形成したニッケルシリサイド薄膜の膜厚が表面形態・結晶相へ与える影響2023
- Author(s)
  木村圭佑、田岡紀之、西村駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si0.2Ge0.8(111)上への熱処理によるSiおよびGeの表面偏析制御2023
- Author(s)
  酒井大希、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  第10回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Si(111)構造の平坦性および結晶性制御と偏析による極薄Si層形成2023
- Author(s)
  酒井大希、大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/ケルビンプローブモードによる超高密度一次元連結Si系量子ドットの帯電状態評価2023
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Evaluation of Si and Ge Segregation from Si0.2Ge0.8(111) through Al and Ag Layer2023
- Author(s)
  Taiki Sakai, Akio Ohta, Noriyuki Taoka, Junji Yuhara, Katsunori Makihara, Yuji Yamamoto, Wei-chen Wen, Seiichi Miyazaki
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] AFM/KFMによる熱酸化SOI基板上に自己組織化形成したSi量子ドットの局所帯電特性評価2023
- Author(s)
  今井友貴、牧原克典、山本裕司、Wen Wei-Chen、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 金属Hfの酸化によって形成した酸化物の結晶構造および化学組成にSi基板面方位が与える影響2022
- Author(s)
  安田航、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 基板加熱によるAl/Ge(111)の結晶性・平坦性の制御と熱処理によるGe 表面偏析2022
- Author(s)
  松下圭吾、大田晃生、林将平、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第27回）
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  35th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces (ISCSI-9)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] 単一結晶相を有する Ni-Germanide 極薄膜の電気特性および電子状態2022
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High-Density Formation and Characterization of Fe-Silicide Nanodots on SiO22022
- Author(s)
  J. Wu, H. Zhang, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  29th International Conference on Amorphous & Nanocrystaline Ssemiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] SiGeナノドット/Si多重集積構造からの電界電子放出2022
- Author(s)
  邱実、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Fe シリサイドドットの室温 PL 特性―ドットサイズ依存性2022
- Author(s)
  斎藤陽斗、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 熱処理によるAl(111)上のSi表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  第9回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] FePt ナノ構造の帯磁特性評価2022
- Author(s)
  武嘉麟，牧原克典，田岡紀之，大田晃生，宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface2022
- Author(s)
  S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Si(111)上に表面偏析したSiの光電子分光分析2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 高温短時間熱処理による極薄SiO2上に形成したa-Si膜の結晶化2022
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] ニッケルシリサイド超薄膜形成におけるSiキャップ層の効果2022
- Author(s)
  木村圭佑、田岡紀之、西村　駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)2022
- Author(s)
  A. Suyama, H. Kawanowa, H. Minagawa, J. Maekawa, S. Nagamachi, M. Aoki, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 高温短時間熱処理による極薄SiO2上に形成したa-Si膜の結晶化2022
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上へのニッケルシリサイド薄膜形成とその表面形態・結晶相制御2022
- Author(s)
  木村　圭佑、田岡　紀之、西村　駿介、大田　晃生、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning2022
- Author(s)
  K. Kimura, N. Taoka, S. Nishimura, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Alignment Control of Self-Assembling Si Quantum Dots2022
- Author(s)
  Y. Imai, R. Tsuji, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Feシリサイドドットの発光特性評価2022
- Author(s)
  古幡裕志、斎藤陽斗、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Study on Photoluminescence Properties of Fe-silicide-NDs2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Al/Si(111)上に表面偏析したSiの光電子分光分析2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of Fe-silicide-NDs and Characterization of Their PL Properties2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Ge(111)上に偏析したGe薄膜の化学結合状態分析2022
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Photoemission Study of Mg Doped GaN(0001) Surfaces2022
- Author(s)
  W. Liu, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Fe シリサイドドットの室温 PL 特性―ドットサイズ依存性2022
- Author(s)
  斎藤陽斗、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] SiO2上へのニッケルシリサイド薄膜形成とその表面形態・結晶相制御2022
- Author(s)
  木村　圭佑、田岡　紀之、西村　駿介、大田　晃生、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] SiGeナノドット/Si多重集積構造からの電界電子放出2022
- Author(s)
  邱実、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si量子ドットの一次元配列制御2022
- Author(s)
  辻綾哉、今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, S. Miyazaki
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Crystalline Phase Control of Hf-oxide Layer due to Si Surface Orientations2022
- Author(s)
  W. Yasuda, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  43rd Int. Symp. on Dry Process
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si(111)上のAl(111)薄膜形成と熱処理によるSi原子の表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Suppression of Ga Diffusion by Interfacial Barrier Layer in AlSiO/p-GaN2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, T. Narita, K. Ito, K. Kataoka, S. Iwasaki, D. Kikuta, K. Tomita, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of Fe-silicide-NDs and Characterization of Their PL Properties2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning2022
- Author(s)
  K. Kimura, N. Taoka, S. Nishimura, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Evaluation of Chemical and Electronic States of Mg-doped GaN(0001) Surfaces2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 基板加熱によるAl/Ge(111)の結晶性・平坦性の制御と熱処理によるGe 表面偏析2022
- Author(s)
  松下圭吾、大田晃生、林将平、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-（第27回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] l/Ge(111)構造上に偏析した極薄Ge 結晶層の転写2022
- Author(s)
  松下圭吾、大田晃生、柴山　茂久、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] FePt ナノ構造の帯磁特性評価2022
- Author(s)
  武嘉麟，牧原克典，田岡紀之，大田晃生，宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Control of Surface Flatness and Ge Segregation on Metal/Ge Structure Toward Ultrathin and Two-dimensional Ge Crystal Growth2022
- Author(s)
  Akio Ohta, Seiichi Miyazaki
- Organizer
  ナノ構造・物性－ナノ機能・応用部会合同シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures2022
- Author(s)
  S. Obayashi, K. Makihara, N. Taoka, A. Ohta,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si(111)上に表面偏析したSiの光電子分光分析2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] HCl による表面洗浄がAl2O3/GaN 界面特性および電気的特性に与える影響2022
- Author(s)
  長井大誠、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-（第27回）
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 偏析法によるAg(100)薄膜表面上のGe超薄膜の創製2022
- Author(s)
  大野誠貴、大田晃生、宮﨑誠一、高倉将一、仲武昌史、Guy Le Lay、柚原淳司
- Organizer
  日本物理学会 2022年秋季大会物性
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] HCl による表面洗浄がAl2O3/GaN 界面特性および電気的特性に与える影響2022
- Author(s)
  長井大誠、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第27回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] l/Ge(111)構造上に偏析した極薄Ge 結晶層の転写2022
- Author(s)
  松下圭吾、大田晃生、柴山　茂久、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si(111)上のAl(111)薄膜形成と熱処理によるSi原子の表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  35th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] High-Density Formation and Characterization of Fe-Silicide Nanodots on SiO22022
- Author(s)
  J. Wu, H. Zhang, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  29th International Conference on Amorphous & Nanocrystaline Ssemiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Feシリサイドドットの発光特性評価2022
- Author(s)
  古幡裕志、斎藤陽斗、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures2022
- Author(s)
  S. Obayashi, K. Makihara, N. Taoka, A. Ohta,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si(111)上のAl(111)薄膜形成と熱処理によるSi原子の表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Suppression of Ga Diffusion by Interfacial Barrier Layer in AlSiO/p-GaN2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, T. Narita, K. Ito, K. Kataoka, S. Iwasaki, D. Kikuta, K. Tomita, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] ニッケルシリサイド超薄膜形成におけるSiキャップ層の効果2022
- Author(s)
  木村圭佑、田岡紀之、西村　駿介、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Ge(111)構造上に偏析した極薄Ge結晶層の転写2022
- Author(s)
  松下圭吾、大田晃生、柴山茂久、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 基板加熱によるAl/Ge(111)の結晶性・平坦性の制御と熱処理によるGe 表面偏析2022
- Author(s)
  松下圭吾、大田晃生、林将平、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第27回）
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Effects of Cl Passivation on Al2O3/GaN Interface Properties2022
- Author(s)
  T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] HCl前洗浄したAl2O3/GaN界面の高温電気的特性2022
- Author(s)
  長井大誠、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Two-Dimensional Ge Crystal Growth by Ge Surface Segregation of Metal/Ge Stack2022
- Author(s)
  A. Ohta and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Effects of Cl Passivation on Al2O3/GaN Interface Properties2022
- Author(s)
  T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Si量子ドット多重集積構造からの電界電子放出―ドットサイズ依存性2022
- Author(s)
  尾林秀治、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 金属Hfの酸化によって形成した酸化物の結晶構造および化学組成にSi基板面方位が与える影響2022
- Author(s)
  安田航、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Two-Dimensional Ge Crystal Growth by Ge Surface Segregation of Metal/Ge Stack2022
- Author(s)
  A. Ohta and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] 共晶系の偏析により形成した極薄Ge結晶のデバイスプロセスの検討2022
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] SiO2上に形成したNiGe超薄膜の表面形態と結晶相制御2022
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si量子ドット多重集積構造からの電界電子放出―ドットサイズ依存性2022
- Author(s)
  尾林秀治、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Photoemission Study of Mg Doped GaN(0001) Surfaces2022
- Author(s)
  W. Liu, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] SiO2上に形成したNiGe超薄膜の表面形態と結晶相制御2022
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 単一結晶相を有する Ni-Germanide 極薄膜の電気特性および電子状態2022
- Author(s)
  西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness2022
- Author(s)
  K. Kimura, S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Photoluminescence Properties of Fe-silicide-NDs2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Evaluation of Chemical and Electronic States of Mg-doped GaN(0001) Surfaces2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Crystalline Phase Control of Hf-oxide Layer due to Si Surface Orientations2022
- Author(s)
  W. Yasuda, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  43rd Int. Symp. on Dry Process
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] HCl前洗浄したAl2O3/GaN界面の高温電気的特性2022
- Author(s)
  長井大誠、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)2022
- Author(s)
  A. Suyama, H. Kawanowa, H. Minagawa, J. Maekawa, S. Nagamachi, M. Aoki, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] First-principles study of two-dimensional materials of group IV elements2022
- Author(s)
  M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, K. Shiraishi
- Organizer
  The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] Alignment Control of Self-Assembling Si Quantum Dots2022
- Author(s)
  Y. Imai, R. Tsuji, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si量子ドットの一次元配列制御2022
- Author(s)
  辻綾哉、今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness2022
- Author(s)
  K. Kimura, S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上へのニッケルシリサイド超薄膜の形成と化学結合状態分析2022
- Author(s)
  木村圭佑、西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Al/Si(111)構造の平坦性および結晶性制御と偏析による極薄Si層形成2022
- Author(s)
  酒井大希、大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface2022
- Author(s)
  S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] SiO2上へのニッケルシリサイド超薄膜の形成と化学結合状態分析2022
- Author(s)
  木村圭佑、西村駿介、田岡紀之、大田晃生、牧原克典、宮﨑誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2021
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] リモート水素プラズマ支援FePt合金ナノドット自己組織化形成プロセスにおける基板温度が磁化特性に与える影響2021
- Author(s)
  本田俊輔，古幡裕志, 大田晃生, 池田弥央, 大島大輝, 加藤剛志, 牧原克典,宮﨑誠一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2021(AWAD 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] リモート H2 プラズマ支援による高密度 Fe 系シリサイドナノドットの高密度一括形成2021
- Author(s)
  何智雪, 武嘉麟, 牧原克典, 張海, 古幡裕志，田岡紀之, 大田晃生, 宮崎誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer2021
- Author(s)
  N. Taoka, R. Hasegawa, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Electron Field Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2021
- Author(s)
  Tatsuya Takemoto, Tomohumi Niibayashi, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices2021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 基板加熱がAl/Ge(111)構造の表面平坦化とGe偏析に及ぼす影響2021
- Author(s)
  松下圭吾、大田晃生、田岡紀之、林将平、牧原克典、宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH42021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 低温水素アニール処理がGeコアSi量子ドットのPL特性に及ぼす影響2021
- Author(s)
  前原拓哉，池田弥央，大田晃生，牧原克典，宮﨑誠一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111)2021
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] Sapphire(0001)上アモルファスGe 薄膜の固相結晶化2021
- Author(s)
  須川響、大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第26回）
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] FeナノドットへのSiH4照射による Feシリサイドナノドットの高密度・一括形成と室温PL特性評価2021
- Author(s)
  斎藤陽斗、古幡裕志、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  第21回日本表面真空学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High-Density Formation of FeSi2 Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2021
- Author(s)
  He Zhixue, Hai Zhang, Akio Ohta, Mitsuhisa Ikeda, Noriyuki Taoka, Katsunori Makihara and Seiichi Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 熱処理によるAlおよびAg/Ge(111)上の極薄Ge形成と層厚制御2021
- Author(s)
  大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH42021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique2021
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices2021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Control of Ultrathin Segregated Ge Layer Thickness on Al/Ge(111) Structure2021
- Author(s)
  A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] High Density Formation of Fe-based Silicide Nanodots Induced by Remote H2 Plasma2021
- Author(s)
  Z. He、J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  42nd International Symposium on Dry Process (DPS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/KFMによる超高密度一次元連結Si系量子ドットの局所帯電電荷計測2021
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 熱処理によるAlおよびAg/Ge(111)上の極薄Ge形成と層厚制御2021
- Author(s)
  大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Ag/Ge 構造の表面偏析制御と平坦化による極薄Ge 結晶形成2021
- Author(s)
  大田晃生、山田憲蔵、須川響、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第26回）
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] 基板加熱がAl/Ge(111)構造の表面平坦化とGe偏析に及ぼす影響2021
- Author(s)
  松下圭吾、大田晃夫、田岡紀之、林将平、牧原克典、宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/KFMによる超高密度一次元連結Si系量子ドットの局所帯電電荷分布計測2021
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第21回日本表面真空学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique2021
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2021(AWAD 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] リモート H2 プラズマ支援による高密度 Fe 系シリサイドナノドットの高密度一括形成2021
- Author(s)
  何智雪, 武嘉麟, 牧原克典, 張海, 古幡裕志，田岡紀之, 大田晃生, 宮崎誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 後酸化によって形成したHf酸化物の結晶構造に基板面方位が与える影響2021
- Author(s)
  安田航, 田岡紀之, 大田晃生, 牧原克典, 宮﨑誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots2021
- Author(s)
  J. Wu、Z. He、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 高密度FeナノドットへのSiH4照射によるシリサイド化反応制御2021
- Author(s)
  古幡裕志、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Influence of Substrate Temperature on Plsma-Enhaced Self-Assembling Formation of High Density FePt-Nanodot2021
- Author(s)
  Shunsuke Honda, Katsunori Makihara, Hiroshi Furuhata, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111)2021
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] FeナノドットへのSiH4照射による Feシリサイドナノドットの高密度・一括形成と室温PL特性評価2021
- Author(s)
  斎藤陽斗、古幡裕志、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  第21回日本表面真空学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Magnetoelectronic Transport Characteristics of Fe3Si Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2021
- Author(s)
  Wu Jialin, Hai Zhang, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si量子ドット多重集積構造へのP添加による内部ポテンシャル変調と電子放出特性評価2021
- Author(s)
  尾林秀治、牧原克典、竹本竜也、田岡紀之、大田晃夫、宮﨑誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111)2021
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2021
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Si量子ドット多重集積構造へのP添加による内部ポテンシャル変調と電子放出特性評価2021
- Author(s)
  尾林秀治、牧原克典、竹本竜也、田岡紀之、大田晃夫、宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] AFM/KFMによる超高密度一次元連結Si系量子ドットの局所帯電電荷分布計測2021
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第21回日本表面真空学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] High Density Formation of Fe-based Silicide Nanodots Induced by Remote H2 Plasma2021
- Author(s)
  Z. He、J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  42nd International Symposium on Dry Process (DPS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer2021
- Author(s)
  N. Taoka, R. Hasegawa, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots2021
- Author(s)
  J. Wu、Z. He、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 後酸化によって形成したHf酸化物の結晶構造に基板面方位が与える影響2021
- Author(s)
  安田航, 田岡紀之, 大田晃生, 牧原克典, 宮﨑誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 高密度FeナノドットへのSiH4照射によるシリサイド化反応制御2021
- Author(s)
  古幡裕志、牧原克典、大田晃生、田岡紀之、宮﨑誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 熱処理によるAlおよびAg/Ge(111)上の極薄Ge形成と層厚制御2021
- Author(s)
  大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] AFM/KFMによる超高密度一次元連結Si系量子ドットの局所帯電電荷計測2021
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮﨑誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 基板加熱がAl/Ge(111)構造の表面平坦化とGe偏析に及ぼす影響2021
- Author(s)
  松下圭吾、大田晃夫、田岡紀之、林将平、牧原克典、宮﨑誠一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure2020
- Author(s)
  A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Al/Ge(111)の表面偏析制御による極薄Ge結晶形成2020
- Author(s)
  小林征登、大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] 光電子エネルギー損失信号によるSi系材料の複素誘電関数評価2020
- Author(s)
  大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] 磁性AFM探針を用いたFe3Siナノドットの電子輸送特性評価2020
- Author(s)
  武嘉麟、張海、古幡裕志、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode2020
- Author(s)
  T. Niibayashi, T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, and S. Miyaaki
- Organizer
  PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] XPSによるSi系材料の複素誘電関数・光学定数の評価2020
- Author(s)
  大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第25回）
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] グラフェン上部電極を用いたSi量子ドット多重集積構造からの電界電子放出 ―コレクタ電極電圧依存性評価2020
- Author(s)
  新林智文、竹本竜也、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Evaluation of Valence Band Top of Si Surface by Vacuum Ultraviolet Photoelectron Spectroscopy with Variable Incident Photon Energy2020
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure2020
- Author(s)
  A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing2020
- Author(s)
  H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] グラフェン電極を用いたSi量子ドット多重集積構造からの電界電子放出2020
- Author(s)
  新林智文、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Characterization of Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots By Using a Magnetic AFM Probe2020
- Author(s)
  J. Wu, H. Zhang , H. Furuhata, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing2020
- Author(s)
  H. Sugawa, A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  PRiME 2020 (ECS, ECSJ, & KECS Joint Meeting)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] 金属Zr/Hf構造の熱酸化によるZrHf酸化物の形成と結晶相制御2020
- Author(s)
  長谷川遼介、田岡紀之、大田晃生、牧原克典、池田弥央、宮﨑誠一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Sapphire(0001)上にスパッタ形成したGe薄膜の結晶化2020
- Author(s)
  須川響、大田晃生、小林征登、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] First-Principles Study on Formation of Freestanding Silicene and Germanene2019
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  2019 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] リモート水素プラズマ支援による磁性合金FeSiナノドットの高密度・一括形成2019
- Author(s)
  橋本靖司、牧原克典、大田晃生、池田弥央、香野淳、宮崎誠一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Characterization of Electron Field Emission of Multiply-Stacked Si-QDs/SiO2 Structures2019
- Author(s)
  T. Takemoto, Y. Futamura, M. Ikeda, A. Ohta, K. Makihara, S. Miyazaki
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing2019
- Author(s)
  M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
- Organizer
  32th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Characterization of Electron Field Emission from Si Quantum Dots with Ge Core/Si Quantum Dots Hybrid Stacked Structures2019
- Author(s)
  T. Takemoto, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  2019 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] B添加がGeコアSi量子ドットのPL特性に及ぼす影響2019
- Author(s)
  永井僚, 藤森俊太郎, 前原拓哉, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties2019
- Author(s)
  S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  International Conference on Materials and Systems for Sustainability 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] ヘテロエピタキシャルAl/Ge(111)上に偏析した極薄Geの化学分析2019
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Si量子ドット多重連結構造からの電界電子放出特性 - 積層数依存性2019
- Author(s)
  竹本竜也, 二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy2019
- Author(s)
  M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  International Conference on Materials and Systems for Sustainability 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Determination of Complex Dielectric Function of Oxide Film from Photoemission Measurements2019
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  International Conference on Materials and Systems for Sustainability 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] Electron Field Emission from MultiplyStacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots2019
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials /12th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] B添加がGeコアSi量子ドットのPL特性に及ぼす影響2019
- Author(s)
  前原拓哉、藤森俊太郎、池田弥央、大田晃生、牧原克典、宮崎誠一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface2019
- Author(s)
  M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
- Organizer
  2019 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] 熱処理によるAl/Ge(111)上の極薄Ge層形成2019
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core2019
- Author(s)
  S. Fujimori, R. Nagai, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference; 10th International SiGe Technology and Device Meeting (ISTDM)/ 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties2019
- Author(s)
  J. Wu, H. Furuhata, H. Zhang, Y. Hashimoto, M. Ikeda, A. Ohta, A. Kohno, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots2019
- Author(s)
  H. Zhang, X. Liu, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 光電子エネルギー損失信号によるSi系材料の複素誘電関数評価2019
- Author(s)
  大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core2019
- Author(s)
  T. Maehara, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation of High Density PtAl Nanodots Induced by Remote Hydrogen Plasma Exposure2019
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  41st International Symposium on Dry Process
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Al/Ge(111)構造で生じる表面偏析を利用した極薄Ge結晶形成2019
- Author(s)
  小林征登、大田晃生、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  第19回日本表面科学会中部支部・学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Complex Dielectric Function of Si Oxide as Evaluated from Photoemission Measurements2019
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  2019 International Workshop on Dielectric Thin Films For Future Electron Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02169
[Presentation] GeコアSi 量子ドット/Si 量子ドット多重連結構造からの電界電子放出特性および電子放出エネルギー評価2019
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Formation of high density Fe-silicide nanodots induced by remote H2 plasma and their magnetic properties2019
- Author(s)
  Y. Hashimoto, K. Makihara, M. Ikeda, A. Ohta, A. Kohno, S. Miyazaki
- Organizer
  The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Impact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties2019
- Author(s)
  K. Makihara, S. Fujimori, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  32nd International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices2019
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  Compound Semiconductor Week 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00762
[Presentation] 光電子収率分光法による熱酸化SiO2/Si構造の電子状態計測2018
- Author(s)
  大田晃生、今川拓哉、池田弥央、牧原克典、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electroluminescence from Si-QDs with Ge Core2018
- Author(s)
  R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] P添加GeコアSi量子ドットの帯電および電子輸送特性評価2018
- Author(s)
  永井僚、山田健太郎、藤森俊太郎、池田弥央、牧原克典、大田晃生、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electron Charging and Local Electron Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018
- Author(s)
  Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki
- Organizer
  Japan Student Chapter Meeting 2018 in Osaka
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 光電子収率分光法による熱酸化SiO2/Si構造の電子状態計測2018
- Author(s)
  大田晃生、今川拓哉、池田弥央、牧原克典、宮崎誠一
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Electroluminescence from Multiply Stacked Si Quantum Dots with Ge Core by Alternate Carrier Injection2018
- Author(s)
  Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
- Organizer
  9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] XPSによる極薄high-k／SiO2ゲートスタック構造の電子状態および化学結合状態評価2018
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― (第23回)
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Characterization of Electron Field Emission from Multiple-Stacking Si Quantum Dots with Ge Core2018
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki
- Organizer
  2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Two Dimensional Ge Crystal Growth by Annealing of Metal/Ge Stack2018
- Author(s)
  大田晃生
- Organizer
  第2回「ポストグラフェン材料のデバイス開発研究会」
- Invited
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs2018
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] P添加GeコアSi量子ドットの帯電および局所電気特性評価2018
- Author(s)
  永井僚, 藤森俊太郎, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
- Organizer
  第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造からのエレクトロルミネッセンス2018
- Author(s)
  牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] XPS Study on High-k/SiO2 Interface -Correlation between Electrical Dipole and Oxygen Density-2018
- Author(s)
  N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Photoemission Study of Gate Dielectrics and Stack Interfaces2018
- Author(s)
  S. Miyazaki, and A. Ohta
- Organizer
  2018 International Conference of Solid State of Device and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] SiO2/Si構造の真空紫外光電子分光分析2018
- Author(s)
  今川拓哉、大田晃生、田岡紀之、藤村信幸、池田弥央、牧原克典、宮崎誠一
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] エピタキシャルAl/Ge(111)の形成と真空中熱処理による表面平坦化およびGe析出2018
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2018
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] First-Principles Study on Hydrogen Adsorption and Desorption of Silicene and Germanene2018
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] GeコアSi量子ドット/Si量子ドット多重集積構造からの弾道電子放出2018
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] XPSによるY2O3/SiO2界面の化学結合状態および内部電位評価2018
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Characterization of Electron Charging and Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018
- Author(s)
  Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
- Organizer
  9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2018
- Author(s)
  Y. Futamura, Y. Nakashima, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 真空蒸着によるGe(111)上のAlヘテロエピタキシャル成長2018
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy2018
- Author(s)
  Y. Nakashima, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing2018
- Author(s)
  A. Ohta K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  49th IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] GeコアSi量子トドット/Si量子トドット多重集積構造からの電界電子放出2018
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Tiナノドットを埋め込んだSiOx膜の電気抵抗変化特性－定電圧および定電流印加による特性制御－2017
- Author(s)
  加藤祐介、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara , A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 絶縁基板上におけるIV族半導体薄膜の結晶方位制御技術：二次元物質への展開2017
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  科学技術交流財団研究交流センター, 愛知
- Year and Date
  2017-02-13
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis2017
- Author(s)
  A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] XPSによるHigh-k/SiO2界面のダイポール定量と酸素密度比との相関2017
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO2 Interface2017
- Author(s)
  N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  2017 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] アモルファス絶縁膜上におけるIV族二次元結晶の電子状態2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第72回年次大会
- Place of Presentation
  大阪大学, 大阪
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS2017
- Author(s)
  N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku University, Miyagi
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造の発光特性2017
- Author(s)
  牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットの発光特性評価2017
- Author(s)
  山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] XPS Study on Evaluation of Electrical Dipole and Atomic Density Ratio at Ultrathin High-k Dielectrics/SiO2 Interface2017
- Author(s)
  N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  2017 International Workshop on Dielectric Thin Films For Future Electron Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates2017
- Author(s)
  M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors2017
- Author(s)
  A. Ohta, T. Yamamoto, N. Truyen, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  0th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku University, Miyagi
- Year and Date
  2017-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017
- Author(s)
  K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ge上にエピタキシャル成長したAg(111)表面の平坦化および化学構造評価2017
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 硬X線光電子分光法によるSi量子ドット多重集積構造のオペランド分析2017
- Author(s)
  中島裕太、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第５回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Total Photoelectron Yield Spectroscopy of Electronic States of GaN Surface2017
- Author(s)
  A. Ohta, N. Truyen, N. Fujimura, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Chubu University,Aichi
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si細線構造への高密度Si量子ドット形成と発光特性2017
- Author(s)
  高磊、池田弥央、山田健太郎、牧原克典、大田晃生、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors2017
- Author(s)
  K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku University, Miyagi
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Evaluation of Resistive Switching Properties of Si-rich Oxide Embedded with Ti Nanodots by Applying Constant Voltage and Constant Current2017
- Author(s)
  A. Ohta, Y. Kato, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  30th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Coventry, UK
- Year and Date
  2017-05-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットのEL特性評価2017
- Author(s)
  山田健太郎、池田弥生、牧原克典、大田晃生、宮崎誠一
- Organizer
  第５回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate2017
- Author(s)
  K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017
- Author(s)
  K. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Coventry, UK
- Year and Date
  2017-05-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] X線光電子分光法による極薄酸化物積層構造の電位変化・ダイポール評価2017
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― (第22回)
- Place of Presentation
  東レ研修センター, 静岡
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 硬X線光電子分光を用いたSi量子ドット多重集積構造の電位分布評価2017
- Author(s)
  中島裕太、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis2017
- Author(s)
  A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 定電圧および定電流印加によるSi酸化薄膜の電気抵抗変化特性評価2017
- Author(s)
  大田晃生、加藤祐介、池田弥央、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 高誘電率絶縁膜/SiO2界面のダイポール形成と化学構造の関係2017
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  第17回日本表面科学会中部支部・学術講演会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 高密度GeコアSi量子ドットの室温EL特性評価2017
- Author(s)
  山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第17回日本表面科学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements2017
- Author(s)
  T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku University, Miyagi
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  科学技術交流財団研究交流センター, 愛知
- Year and Date
  2017-01-25
- Invited
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111)2017
- Author(s)
  K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Chubu University, Aichi
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Filled Electronic States of Epitaxial GaN(0001) Surface by Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, N. Truyen, N. Fujimura, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  2017 International Workshop on Dielectric Thin Films For Future Electron Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 高誘電率絶縁膜の電子親和力の決定およびSiO2 との界面で生じる電位変化の定量2017
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  2017 年真空・表面科学合同講演会第37 回表面科学学術講演会・第58 回真空に関する連合講演会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] XPSによるHigh-k/SiO2界面の化学構造およびダイポールの評価2017
- Author(s)
  藤村信幸、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Determination of Electron Affinity of Si-based Materials using by X-ray Photoelectron Spectroscopy2016
- Author(s)
  N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar “Atomically Controlled Processing for Ultralarge Scale Integration”
- Place of Presentation
  Sendai, Miyagi, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si系量子ドット多重集積構造からの電界電子放出特性2016
- Author(s)
  中島裕太、大田晃生、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  2016真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method2016
- Author(s)
  A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Evaluation of Dielectric Function of Thermally-Grown SiO2 from Energy Loss Signals for XPS Core-Line Photoelectrons2016
- Author(s)
  T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  PRiME 2016/230th ECS Meeting
- Place of Presentation
  Hawaii Convention Center, Hawai
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Ti薄膜およびナノドットを埋め込んだSiOx-MIMダイオードの抵抗変化特性2016
- Author(s)
  加藤祐介、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2016
- Place of Presentation
  名古屋大学, 愛知
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] アルミナ表面上のゲルマネンおよびスタネンの電子状態2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会 2016年秋季大会
- Place of Presentation
  金沢大学, 石川
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] SiおよびSiGe上に形成したAg表面の化学分析2016
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2016
- Place of Presentation
  名古屋大学, 愛知
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] SiOx膜へのTiナノドットの埋め込みがその抵抗変化特性に与える影響2016
- Author(s)
  加藤祐介、大田晃生、牧原克典、宮崎誠一
- Organizer
  電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理- (第21回)
- Place of Presentation
  静岡県三島市
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si細線構造への高密度Si量子ドット形成2016
- Author(s)
  高磊、竹内大智、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  2016真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] X線光電子分光法による熱酸化SiO2およびGeO2薄膜の誘電関数評価2016
- Author(s)
  山本泰史、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  2016年第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] リモート酸素プラズマ支援CVDによる低温SiO2薄膜形成2016
- Author(s)
  グェンスァンチュン、藤村信幸、竹内大智、大田晃生、牧原克典、池田弥央、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  キャンパス・イノベーションセンター東京, 東京
- Year and Date
  2016-06-29
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] シリコン酸化薄膜の電気抵抗スイッチングおよび欠陥準位密度評価2016
- Author(s)
  加藤祐介、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  年真空・表面科学合同講演会 (第36 回表面科学学術講演会、第57 回真空に関する連合講演会)
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] First-Principles Study on Germanene and Stanene on a-Alumina2016
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  24rd International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  Hawaii Convention Center, Hawai
- Year and Date
  2016-12-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Electronic States of two-dimensional crystals of group IV element on a-Al2O3(0001) surfaces2016
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Rome, Italy
- Year and Date
  2016-10-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Effect of Ge Stacked Layer on Ti Nanodots Formation From Metal Thin Films by Remote Hydrogen Plasma Exposure2016
- Author(s)
  Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] GeコアSi量子ドット／Si量子ドット多重集積構造のEL特性2016
- Author(s)
  竹内大智、山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] IV 族半導体上に蒸着したAg 薄膜の化学構造評価と反応制御2016
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  2016 年真空・表面科学合同講演会 (第36 回表面科学学術講演会、第57 回真空に関する連合講演会)
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors2016
- Author(s)
  Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Hakodate Kokusai Hotel, Hokkaido
- Year and Date
  2016-07-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Processing and Characterization of Si/Ge Quantum Dots2016
- Author(s)
  S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
- Organizer
  Int. Electron Devices Meeting 2016
- Place of Presentation
  San Francisco, CA
- Year and Date
  2016-11-03
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ti 系薄膜および Ti ナノドットを埋め込んだ SiOx膜の抵抗変化特性評価2016
- Author(s)
  加藤祐介、大田晃生、牧原克典、宮崎誠一
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si, 4H-SiCおよびSiO2の価電子帯上端位置と電子親和力の評価2016
- Author(s)
  藤村信幸、大田晃生、牧原克典、宮崎誠一
- Organizer
  電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理- (第21回)
- Place of Presentation
  静岡県三島市
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] XPSを用いたSiO2およびGeO2の誘電関数・光学定数の評価手法の検討2016
- Author(s)
  山本泰史、大田晃生、池田弥央、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2016
- Place of Presentation
  名古屋大学, 愛知
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Evaluation of Potential Change and Electrical Dipole in HfO2/SiO2/Si Structure2016
- Author(s)
  N.Fujimura, A.Ohta, K.Makihara, S.Miyazaki
- Organizer
  2016 International Conference of Solid State of Device and Materials
- Place of Presentation
  Tsukuba International Congress Center, Ibaraki
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] XPSによるSiO2/半導体界面の電位変化およびダイポールの定量2016
- Author(s)
  藤村信幸、大田晃生、渡辺浩成、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  キャンパス・イノベーションセンター東京, 東京
- Year and Date
  2016-06-29
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  7th Int. Symposium on Control of Semiconductor Interfaces and 8th Int. SiGe Technology and Device Meeting joint meeting
- Place of Presentation
  Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] High Density Ti Nanodots Formation and Improvement of ReRAM Characteristics by Embedding Ti Nanodots2016
- Author(s)
  Y. Kato, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar “Atomically Controlled Processing for Ultralarge Scale Integration”
- Place of Presentation
  Sendai, Miyagi, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] 絶縁膜上にあるIV族系二次元結晶の電子状態解析2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  仙台市, 宮城県
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] P添加Si量子ドット多重集積構造の電界電子放出特性評価2015
- Author(s)
  竹内大智、牧原克典、大田晃生、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Tiナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性2015
- Author(s)
  加藤祐介、荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス]シリコンテクノロジー分科会 7月度合同研究会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] First-principles study on two-dimensional crystals of group IV element on insulating film2015
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
- Place of Presentation
  Niseko, Hokkaido, Japan
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] KFMによるFePtナノドットスタック構造の局所帯電評価2015
- Author(s)
  満行優介、大田晃生、牧原克典、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H02239
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2015
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  第35回表面科学学術講演会
- Place of Presentation
  仙台市, 宮城県
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Photoemission Study of the Electronic Structure of Si-based Materials2015
- Author(s)
  A. Ohta, N. Fujimura, K. Makihara, and S. Miyazaki
- Organizer
  The first International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN2015)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2015-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si量子ドット多重集積構造からの電子放出特性評価2015
- Author(s)
  竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第15回日本表面科学会中部支部研究会
- Place of Presentation
  名古屋
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ni/SiOx/Ti Nanodots/SiOx/Niダイオードの抵抗変化特性評価2015
- Author(s)
  加藤祐介、荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] XPSによるSi系材料の電子親和力決定手法の検討2015
- Author(s)
  藤村信幸、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2015
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core2015
- Author(s)
  K. Kondo, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Jeju, Korea
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ag誘起層交換成長法によるSi極薄膜の形成2015
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Organizer
  第35回表面科学学術講演会
- Place of Presentation
  つくば市, 茨城県
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Characterization of Field Emission Properties from Multiply-Stacking Si Quantum Dots2015
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Marseille, France
- Year and Date
  2015-07-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 外部磁場が高密度FePtナノドットスタック構造の電子輸送特性に及ぼす影響2015
- Author(s)
  河瀬平雅、満行優介、大田晃生、牧原克典、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H02239
[Presentation] X線光電子分光法によるSiおよびSiO2の価電子帯上端位置の決定2015
- Author(s)
  藤村信幸、大田晃生、牧原克典、宮崎誠一
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots2015
- Author(s)
  Y. Kato, A. Ohta, T. Arai, K. Makihara, and S. Miyazaki
- Organizer
  2015 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2015)
- Place of Presentation
  koto-ku, Tokyo, Japan,
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS2015
- Author(s)
  N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2015 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2015)
- Place of Presentation
  koto-ku, Tokyo, Japan
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Si and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth2015
- Author(s)
  M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
- Place of Presentation
  Niseko, Hokkaido, Japan
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Resistive Switching Characteristics of Si-rich Oxides with Embedding Ti Nanodots2015
- Author(s)
  Y. Kato, T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  226th The Electrochemical Scociety (ECS) Meeting
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Tiナノドットの高密度一括形成とその埋め込みによる抵抗変化特性の向上2015
- Author(s)
  加藤祐介、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2015
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-15H05520
[Presentation] Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diodes2014
- Author(s)
  T. Arai, C. Liu, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  Tohoku University, Sendai, Japan
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドットを埋め込んだSiOx膜の抵抗変化特性2014
- Author(s)
  荒井崇、劉沖、大田晃生、牧原克典、宮崎誠一
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学、神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性2014
- Author(s)
  荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学東山キャンパス, 愛知県
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドット埋め込んだSiOx-Ni電極 MIMダイオードの抵抗変化特性2014
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  第14回日本表面科学会中部支部・学術講演会
- Place of Presentation
  名古屋大学東山キャンパス, 愛知県
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] ナノドットを電極に用いたNi/SiOx/Niダイオードの抵抗変化特性評価2014
- Author(s)
  大田晃生、劉沖、荒井崇、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  名古屋大学東山キャンパス, 愛知県
- Year and Date
  2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Niナノドットを電極に用いたSiOx-ReRAMの抵抗変化特性2014
- Author(s)
  加藤祐介、劉冲、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学東山キャンパス, 愛知県
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドットを埋め込んだNi/SiOx/Ni構造の抵抗変化特性2014
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  名古屋大学東山キャンパス, 愛知県
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドットを埋め込んだSiOx MIM構造の局所電気伝導解析2014
- Author(s)
  荒井崇、劉沖、大田晃生、牧原克典、宮崎誠一
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学、神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Niナノドット電極を用いたSiOx薄膜の抵抗変化特性2014
- Author(s)
  劉沖、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学、神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode Mim Diodes2013
- Author(s)
  A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi, and S Miyazaki
- Organizer
  224th The Electrochemical Scociety Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, California , USA
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Impact of Y_2O_3 Addition of Chemical Bonding Features and Resistance Switching of TiO_22011
- Author(s)
  Akio Ohta
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Ru添加したTiY_x O_yの抵抗変化特性評価2011
- Author(s)
  大田晃生
- Organizer
  平成23年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川,厚木
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Impact of Y_2O_3 Addition of Chemical Bonding Features and Resistance Switching of TiO_22011
- Author(s)
  Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF), P-40, pp. 113-114
- Place of Presentation
  Tokyo Institute of Technology, Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Ru添加したTiY_xO_yの抵抗変化特性評価2011
- Author(s)
  大田晃生, 後藤優太, 三嶋健斗, Goubin Wei, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  平成23年春季第58回応用物理学関係連合講演会,25a-BZ-6,06-119
- Place of Presentation
  神奈川,厚木,神奈川工科大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiY_xO_y膜の化学結合状態分析および抵抗変化特性評価2010
- Author(s)
  大田晃生
- Organizer
  平成31年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] The Impact of Y_O_3 Addition into TiO_2 On Electronic States and Resistive Switching Characteristics2010
- Author(s)
  A.Ohta, Y.Goto, G.Wei, K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
- Organizer
  23rd International Microprocesses and Nanotechnology Conference (MNC2010), 11B-6-2
- Place of Presentation
  Rihga Royal Hotel Kokura, Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] The Impact of Y_2 O_3 Addition into TiO_2 on Electronic States and Resistive Switching Characteristics2010
- Author(s)
  A.Ohta
- Organizer
  23rd International Microprocesses and Nanotechnology Conference (MNC2010)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiO_2へのY添加が電子状態および抵抗変化特性に与える影響2010
- Author(s)
  大田晃生
- Organizer
  電気通信情報学会(SDM)シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  目黒、東京
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiO_2/Pt界面における化学結合状態分析と抵抗変化特性評価2010
- Author(s)
  後藤優太, 貫目大介, 大田晃生,尉国浜, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  ゲートスタック研究会第15回研究会極薄シリコン酸化膜の形成・評価・信頼性,P-26, pp.209-213
- Place of Presentation
  静岡、三島、東レ総合研修センター
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Chemical Bonding Features at TiO_2/Pt Interface and Their Impact on Resistance-Switching Properties2010
- Author(s)
  後藤優太, 大田晃生, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  The 2010 (International Meeting for Future of Electror Devices, Kansai (IMFEDK), PB-4 p. 114
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiO_2へのY添加が電子状態および抵抗変化特性に与える影響2010
- Author(s)
  大田晃生, 後藤優太, モハマドファイルズカマルザン, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  電気通信情報学会(SDM)[シリコン材料・デバイス]シリコンテクノロジー分科会6月度合同研究会SDM2010-38 pp.27-32
- Place of Presentation
  東京、東京大学駒場リサーチキャンパス生産技術研究所
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiY_xO_y膜の化学結合状態分析および抵抗変化特性評価2010
- Author(s)
  大田晃生, モハマドファイルズカマルザン, 後藤優太, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  平成21年春季第57回応用物理学関係連合講演会,20a-TQ-40,6-221
- Place of Presentation
  神奈川、平塚、東海大学湘南キャンパス
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] TiO_2/Pt界面の化学結合および電子状態評価2009
- Author(s)
  後藤優太、大田晃生、貫目大介、尉国浜、村上秀樹、東清一郎、宮崎誠一
- Organizer
  電気通信情報学会(SDM)[シリコン材料・デバイス]シリコンテクノロジー分科会6月度合同研究会,SDM2009-44,pp.99-103
- Place of Presentation
  東京、東京大学駒場リサーチキャンパス生産技術研究所
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] X線光電子分光法によるTiO_2/Pt界面の化学結合状態分析2009
- Author(s)
  後藤優太, 貫目大介, 大田晃生, 尉国浜, 村上秀樹, 東清一郎, 宮崎誠一
- Organizer
  2009年第70回秋季応用物理学会学術講演会,9a-H-4, p.550
- Place of Presentation
  富山、富山大学
- Data Source
  KAKENHI-PROJECT-21860062
[Presentation] Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes
- Author(s)
  A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
- Organizer
  International Union of Materials Research Societies - The IUMRS International Conference in Asia 2016 (IUMRS-ICA)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
- Author(s)
  A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014)
- Place of Presentation
  Kanazawa Bunka Hall, Ishikawa, Japan
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe
- Author(s)
  T. Arai, C. Liu, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  International Union of Materials Research Societies - The IUMRS International Conference in Asia 2016 (IUMRS-ICA)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Impact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxide
- Author(s)
  T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  5th The international SiGeTechnology and Device Meeting (ISTDM2014)
- Place of Presentation
  Swissotel Merchant Court, Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Mnナノドット埋め込みSiリッチ酸化膜の抵抗変化特性
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] SiOx/TiO2積層したMIMダイオードにおける抵抗スイッチング
- Author(s)
  荒井崇、大田晃生、福嶋太紀、牧原克典、宮崎誠一
- Organizer
  第13回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学、愛知県名古屋市
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] SiOx/TiO2積層したMIMダイオードにおける抵抗変化特性評価
- Author(s)
  大田晃生、福嶋太紀、牧原克典、村上秀樹、東清一郎、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Place of Presentation
  機械振興会館、東京都港区
- Data Source
  KAKENHI-PROJECT-25790058
[Presentation] Si-rich 酸化膜へのMnナノドット埋め込みが抵抗変化特性へ及ぼす影響
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  ゲートスタック研究会 -材料・プロセス・評価の物理- (第20回研究会)
- Place of Presentation
  東レ総合研修センター, 静岡県
- Year and Date
  2015-01-30 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-25790058

1. Makihara Katsunori (90553561)

# of Collaborated Projects: 6 results

# of Collaborated Products: 268 results
2. 洗平昌晃 (20537427)

# of Collaborated Projects: 4 results

# of Collaborated Products: 30 results
3. Seiichi Miyazaki (70190759)

# of Collaborated Projects: 3 results

# of Collaborated Products: 97 results
4. 黒澤昌志 (40715439)

# of Collaborated Projects: 3 results

# of Collaborated Products: 29 results
5. 田岡紀之 (50626009)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
6. 柚原淳司 (10273294)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
7. IKEDA Mitsuhisa

# of Collaborated Projects: 1 results

# of Collaborated Products: 52 results

Ohta Akio 大田 晃生

OHTA AKIO 大田 晃生

OHTA Akio 大田 晃生

Research Projects

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Co-Researchers

14族ナノシートの合成

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ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御Principal Investigator

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Fabrication and Characterization of Super-atom-like Hybrid Nanodots for New Functional Devices

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Formation of Ge two-dimensional crystals embedded into Si oxide and its device applicationPrincipal Investigator

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Fabrication and Characterization of High-density Superatom-like Ge-core/Si-shell Quantum Dot for Light Emission

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Formation and Characterization of Germanium Two-Dimensional Crystal on Insulating SubstratePrincipal Investigator

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Self-organized Formation of Ge-based Two-dimensional Crystals and Control of Crystalline Structure and Electronic StatePrincipal Investigator

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Growth and Characterization of Silicon-based Two-Dimensional MaterialsPrincipal Investigator

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Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical Properties

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磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用

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Study on defect distribution and resistive switching behaviors of Si oxide thin filmsPrincipal Investigator

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Characterization of Resistive Switching Behaviors of Si-rich Oxide ReRAMsPrincipal Investigator

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Characterization of Chemical Bonding Features of Ti Oxide based ReRAM and Their Impact on Resistance-Switching PropertiesPrincipal Investigator

Principal Investigator

Ohta Akio 大田晃生

OHTA AKIO 大田晃生

OHTA Akio 大田晃生

[Book] 「共晶系で生じる析出現象を応用したIV族系ナノシート形成技術」、ポストグラフェン材料の創製と用途開発最前線 -二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術-2020