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Miyazaki Seiichi  宮崎 誠一

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… Alternative Names

MIYAZAKI Seiichi  宮崎 誠一

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Researcher Number 70190759
Other IDs
External Links
Affiliation (Current) 2020: 名古屋大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help 2016 – 2018: 名古屋大学, 工学研究科, 教授
2017: 名古屋大学, 大学院工学研究科, 教授
2012 – 2015: 名古屋大学, 工学(系)研究科(研究院), 教授
2010 – 2011: 名古屋大学, 工学研究科, 教授
2003 – 2009: 広島大学, 大学院・先端物質科学研究科, 教授 … More
2008: Hiroshima University, 大学院先端物質科学研究科, 教授
2007: Hiroshima University, 大学院・生端物質科学研究科, 教授
2006 – 2007: 広島大学, 先端物質科学研究科, 教授
2005 – 2006: HIROSHIMA UNIVERSITY, Graduate School of Advanced Sciences of Matter, Professor, 大学院先端物質科学研究科, 教授
1992 – 2000: 広島大学, 工学部, 助教授
1987 – 1991: 広島大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / 表面界面物性 / Science and Engineering
Except Principal Investigator
電子材料工学 / Electronic materials/Electric materials / 電子デバイス・機器工学 / Thin film/Surface and interfacial physical properties / Science and Engineering / Electron device/Electronic equipment / Thin film/Surface and interfacial physical properties
Keywords
Principal Investigator
量子ドット / Si量子ドット / スーパーアトム / 発光デバイス / エレクトロルミネッセンス / フローティングゲート / Si系量子ドット / 表面層高感度分析 / 紫外線レーザラマン散乱 / アモルファスシリコン … More / ネットワーク形成 / 水素結合 / 不純物イオン注入 / 非結晶化 / 非破壊分析 / ナノ結晶 / ハイブリッドナノドット / フローティングゲートメモリ / 金属ナノドット / ハイブリッドドット / 光レスポンス / シリコン量子ドット / シリサイドナノドット / ハイブリッド構造 / メモリデバイス / 不揮発メモリ / 量子サイズ効果 / 不揮発性メモリ / 一次元連結 / LPCVD / 縦積み連結 / Ge量子ドット / 発光ダイオード / 配列制御 / 極薄SiO_2 / Si界面 / 光電子収率分光法 / フェルミ準位 / 表面準位密度 / 価電子帯状態密度 / 光電子脱出深さ / 界面準位密度 / 水素終端Si処理 / 欠陥準位密度 / ケルビンプローブ / 光電子収率分光 / 表面・界面欠陥 / 界面準位 / 表面準位 / 極薄シリコン酸化膜 / 電子占有状態 / 仕事関数 / Ultrathin SiO_2 / c-Si Interface / Photoelectron Yield Spectroscopy / Sur11face Fermi Level / Surface States Density / Valence Band State Density / Photoelectron Escape Depth / Interface State Density / Hydrogen Terminated Si Surface / シリコン / 量子効果 / 減圧CVD / 位置制御 / 走査プローブ顕微鏡 / トンネル電流 / 量子構造 / 自己組織化形成 / 原子間力顕微鏡 / 選択成長 / 表面化学結合 / Silicon / Quantum Effect / Quantum Dots / Low Pressure CVD / Location Control / Scanning Probe Microscope / Tunnel Current / 自己組織化 / Quantum dots / LED / 磁性ドット … More
Except Principal Investigator
表面反応 / 吸着ラジカル / 質量分析 / シリコン量子ドット / FT-IR-ATR / プラズマ / レーザ誘起光化学反応 / デジタルエッチング / 自己組織化形成 / 室温動作 / シリコン / スケーリング則 / MOSFET / SiO_2 / AFM / 原子間力顕微鏡 / LPCVD / silicon quantum dot / self-assembling / デジタルCVD / レ-ザ誘起光化学反応 / 冷却プラズマCVD / マイクロロ-ディング / 炭酸ガスレ-ザ / エキシマレ-ザ / レ-ザ誘起反応 / ジシラン吸着層 / エッチング / エクシマレーザ / 弗化層 / レーザ誘起脱離 / メモリデバイス / 量子デバイス / トンネル電子注入 / 電子保持特性 / 表面ポテンシャル解析 / 超々大規模集積回路 / ゲルマニウム / ナノ構造化メモリ / 三次元構造デバイス / シグナルインテグリティ / シリコンULSI / ポストスケーリング技術 / 電子デバイス / 半導体超微細化 / デバイス設計・製造プロセス・超薄膜 / ナノ材料 / ナノCMOS / ナノデバイスインテグリティ / 特性ばらつき / デバイス設計・製造プロセス / 超薄膜 / シリコン表面 / 表面マイクロラフネス / 水素終端表面 / 原子ステップ構造 / 原子層酸化 / Si界面 / 表面モフォロジー / layer by layer酸化 / LOフォノン / 圧縮性応力 / 表面酸化 / 全反射赤外吸収分析 / Silicon surface / Surface microroughness / Hydrogen-terminated Si / Atomic step structure / Layr-by-layr oxidation / Si interface / プラズマCVD / シリコン酸化膜 / 全反射赤外吸収分光 / その場観察 / 平坦化技術 / 選択成長法 / シリコン薄膜 / Plasma CVD / Silicon dioxide / Real time monitoring / Planarization technique / Selective growth technique / 中速イオン散乱 / イオン注入装置 / 飛行時間測定 / 表面損傷 / 不純物分布 / 半導体検出器 / プラズマ損傷 / スペクトルシミュレーション / アルゴンプラズマ / コンタクトホール / アンチモンイオン注入 / medium energy ion scattering / ion implanter / time of flight measurement / surface damage / impurity profile / semiconductor detector / plasma-induced damage / spectra simulation / 自己組織化 / 二重障壁構造 / 共鳴トンネル効果 / トンネル電流 / 室温発光 / 化学気相成長 / 室温量子効果 / フォトルミネッセンス / 可視域発光 / 光電子スペクトル / 帯電 / double barrier structure / resonant tunneling / tunneling current / atomic force microscopy / luminessence at room temperature / メモリ効果 / フローティングゲートMOSメモリ / しきい値電圧シフト / 室温動作メモリ / 多段階電子注入 / 保持電子間の相互作用 / 保持電子数 / 低電圧書き込み / memory effect / floating gate MOS memory / threshold voltage shift / room temperature operation / multilevel electron charging / Coulombic interaction / アンテナ / ワイヤレス / 配線 / 無線 / インターコネクト / 送受信回路 / ガウシアンパルス / 無線通信 / 低誘電率膜 / 送信回路 / 低誘電率層間絶縁膜 / LSI / 多孔質 / 感光性 / Silicon / Antenna / Wireless / Interconnect / Radio communication / Interconnection / Transceiver / ラジカルビーム / エピタキシャル成長 / グロー放電プラズマ / 電子サイクロトロン共鳴 / EC放電 / RHEED / 反射高速電子線回析 / ラマン散乱分光 / Radical Beam / Epitaxy / Grow Discharge Plasma / シリセン / ゲルマネン / スタネン / 二次元物質 / 第一原理計算 / 物質創製 / 理論 / エッジ状態 / 物質設計 / 物質合成 / タイトバインディング近似 / スピン軌道相互作用 / ナノリボン / IV族元素 / 多軌道タイトバインディング法 Less
  • Research Projects

    (27 results)
  • Research Products

    (434 results)
  • Co-Researchers

    (29 People)
  •  Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical PropertiesPrincipal Investigator

    • Principal Investigator
      Seiichi Miyazaki
    • Project Period (FY)
      2015 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用Principal Investigator

    • Principal Investigator
      宮崎 誠一
    • Project Period (FY)
      2015
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Synthesis of New Group IV Two Dimensional Materials

    • Principal Investigator
      Shiraishi Kenji
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Nagoya University
  •  Alignment Control and Electrical Coupling of High-density Si-based Quantum DotsPrincipal Investigator

    • Principal Investigator
      SEIICHI Miyazaki
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its ElectroluminescencePrincipal Investigator

    • Principal Investigator
      MIYAZAKI Seiichi
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
      Hiroshima University
  •  Technology Evolution for Silicon Nano-Electronics

    • Principal Investigator
      ZAIMA Shigeaki
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya University
  •  Integration of silicon-based nano-scalestructure and its functional memory device applicationPrincipal Investigator

    • Principal Investigator
      MIYAZAKI Seiichi
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Hiroshima University
  •  シリコン系スーパーアトム構造の高密度集積と新機能材料創成Principal Investigator

    • Principal Investigator
      宮崎 誠一
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hiroshima University
  •  シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

    • Principal Investigator
      ZAIMA Shigeaki
    • Project Period (FY)
      2005
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Nagoya University
  •  PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンスPrincipal Investigator

    • Principal Investigator
      宮崎 誠一
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hiroshima University
  •  The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state controlPrincipal Investigator

    • Principal Investigator
      MIYAZAKI Seiichi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Ultra-high Speed Global Interconnects for Inter-chip Communication

    • Principal Investigator
      KIKKAWA Takamaro
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Control of Silicon quantum structures and its application to room-temperature device operationPrincipal Investigator

    • Principal Investigator
      MIYAZAKI Seiichi
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (A).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Basic Research on Electronic Properties and Memory Effect of Silicon-Quantum-Dot Array and Its Application to Memory Device

    • Principal Investigator
      KOHNO Atsushi
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Fukuoka University
      Hiroshima University
  •  半導体表面近傍に偏析した分子状不純物の紫外線レーザラマン分光法による高感度分析Principal Investigator

    • Principal Investigator
      宮崎 誠一
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      表面界面物性
    • Research Institution
      Hiroshima University
  •  シリコン量子ドット凝集体を用いたメモリデバイスに関する基礎的研究

    • Principal Investigator
      香野 淳
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hiroshima University
  •  Determination of Energy Distribution of Defect State Density for Ultrathin SiO_2/Si Interfaces by Using Photoelectron Yield SpectroscopyPrincipal Investigator

    • Principal Investigator
      MIYAZAKI Seiichi
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Self-Assembling Formation of Silicon Quantum Dots

    • Principal Investigator
      HIROSE Masataka
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Development of medium energy ion scattering spectroscopy using time of flight method and its application to semiconductor process evaluation

    • Principal Investigator
      YOKOYAMA Shin
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  低温半導体表面吸着分子のレーザ誘起反応の機構と原子層プロセス

    • Principal Investigator
      広瀬 全孝
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  Layr-by-layr oxidation mechanism of hydrogen-terminated silicon surfaces and their interface structures

    • Principal Investigator
      HIROSE Masataka
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  Development of selective deposition technique of sillicon dioxideinto extremely fine patterned structure and its application to G-bit memory wiring

    • Principal Investigator
      HIROSE Masataka
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      HIROSHIMA UNIVERSITY
  •  低温半導体表面吸着分子のレ-ザ誘起反応の機構と原子層成長

    • Principal Investigator
      広瀬 全孝
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  プラズマ-表面相互作用の制御

    • Principal Investigator
      広瀬 全孝
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  プラズマ-表面相互作用の制御

    • Principal Investigator
      HIROSE Masataka
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  プラズマ-表面相互作用の制御

    • Principal Investigator
      広瀬 全孝
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hiroshima University
  •  Study on the Fundamental Mechanism of Radical Beam Epitaxy

    • Principal Investigator
      HIROSE Masataka
    • Project Period (FY)
      1986 – 1988
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      電子材料工学
    • Research Institution
      HIROSHIMA UNIVERSITY

All 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] 次世代半導体メモリの最新技術2009

    • Author(s)
      宮崎誠一
    • Total Pages
      23
    • Publisher
      シーエムシー出版(第6章分担執筆 :「シリコン系ナノ構造集積と機能メモリデバイス開発」
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Book] プラズマ・核融合学会誌(熱プラズマによるアモルファスシリコンの結晶化:講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用, vol.85,No.3)2009

    • Author(s)
      東清一郎、宮崎誠一
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 実用薄膜プロセス-機能創製・応用展開-2009

    • Author(s)
      宮崎誠一
    • Total Pages
      22
    • Publisher
      技術教育出版社(第1編「創製技術」第5章「CVD」)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Book] 次世代半導体メモリの最新技術(第6章分担執筆:「シリコン系ナノ構造集積と機能メモリデバイス開発」)2009

    • Author(s)
      宮崎誠一
    • Total Pages
      23
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 実用薄膜プロセス-機能創製・応用展開-2009

    • Author(s)
      宮崎誠一
    • Publisher
      技術教育出版社
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 実用薄膜プロセス-機能創製・応用展開-(第1編「創製技術」第5章「CVD」)2009

    • Author(s)
      宮崎誠一
    • Total Pages
      22
    • Publisher
      技術教育出版社
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 次世代半導体メモリーの最新技術、2009第6章分担執筆 : 「シリコン系ナノ構造集積と機能メモリデバイス開発」2009

    • Author(s)
      宮崎誠一, 池田弥央
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 表面科学2007

    • Author(s)
      宮崎誠一
    • Total Pages
      6
    • Publisher
      日本表面科学会出版
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Book] 表面科学2007

    • Author(s)
      宮崎誠一
    • Total Pages
      6
    • Publisher
      日本表面科学会出版
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Book] 次世代半導体メモリーの最新技術2007

    • Author(s)
      宮崎誠一、池田弥央
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection2018

    • Author(s)
      K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 1 Pages: 011305-011305

    • DOI

      10.7567/apex.11.011305

    • NAID

      210000136059

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy2018

    • Author(s)
      Yuto Futamura, Yuta Nakashima, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SA Pages: SAAE01-SAAE01

    • DOI

      10.7567/1347-4065/aaeb38

    • NAID

      210000135209

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-17K18877
  • [Journal Article] Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core2018

    • Author(s)
      Ryo Nagai, Kentaro Yamada, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
    • Journal Title

      Semicond. Sci. Technol.

      Volume: 33 Pages: 124021-124021

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties2017

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Journal Title

      Material Science in Semiconductor Processing

      Volume: 印刷中

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017

    • Author(s)
      A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
    • Journal Title

      Microelectronic Engineering

      Volume: 178 Pages: 85-88

    • DOI

      10.1016/j.mee.2017.05.001

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
  • [Journal Article] Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation2017

    • Author(s)
      Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 6S1 Pages: 06GG07-06GG07

    • DOI

      10.7567/jjap.56.06gg07

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties2017

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 70 Pages: 183-187

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis2017

    • Author(s)
      A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
    • Journal Title

      Microelectronic Engineering

      Volume: 178 Pages: 80-84

    • DOI

      10.1016/j.mee.2017.05.002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
  • [Journal Article] Photoluminescence study of high density Si quantum dots with Ge core2016

    • Author(s)
      K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki
    • Journal Title

      Journal of Applied Physics

      Volume: 119

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Study on electroluminescence from multiply-stacking valency controlled Si quantum dots2016

    • Author(s)
      T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Journal Title

      Thin Solid Films

      Volume: 602 Pages: 48-51

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Photoluminescence study of high density Si quantum dots with Ge core2016

    • Author(s)
      K. Kondo, K. Makihara, M. Ikeda and S. Miyazaki
    • Journal Title

      J. Appl. Phys.

      Volume: 119 Pages: 033103-033103

    • DOI

      10.1063/1.4940348

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core2016

    • Author(s)
      K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
    • Journal Title

      ECS Trans.

      Volume: 75 Pages: 695-700

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Evaluation of field emission properties from multiple-stacked Si quantum dots2016

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Journal Title

      Thin Solid Films

      Volume: 602 Pages: 68-71

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Journal Article] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots2015

    • Author(s)
      R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki
    • Journal Title

      Trans. of Mat. Res. Soc. Jpn

      Volume: in press

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02239
  • [Journal Article] High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy2014

    • Author(s)
      D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi
    • Journal Title

      IEICE Trans. on Electronics

      Volume: Vol. E97-C Pages: 397-400

    • NAID

      130004519105

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack2014

    • Author(s)
      3.A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
    • Journal Title

      ECS Trans.

      Volume: 64 Pages: 241-248

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization2014

    • Author(s)
      K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 11S Pages: 11RA02-11RA02

    • DOI

      10.7567/jjap.53.11ra02

    • NAID

      210000144616

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246054, KAKENHI-PROJECT-25709023
  • [Journal Article] Photoluminescence Study of Si Quantum Dots with Ge Core2014

    • Author(s)
      K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
    • Journal Title

      ECS Trans.

      Volume: 64 Pages: 365-370

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy2014

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Journal Title

      ECS Trans.

      Volume: 64 Pages: 923-928

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory2014

    • Author(s)
      Shintaro Otsuka, Tomohiro Shimizu, Shoso Shingubara, Katsunori Makihara, Seiichi Miyazaki, Atsushi Yamasaki , Yusuke Tanimoto, and Kouichi Takase
    • Journal Title

      AIP Advances

      Volume: 4 Pages: 087110-087110

    • DOI

      10.1063/1.4892823

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-13J03342, KAKENHI-PROJECT-24246054
  • [Journal Article] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2014

    • Author(s)
      K. Makihara,M. Ikeda and S. Miyazaki
    • Journal Title

      IEICE Trans. on Electronics

      Volume: Vol. E97-C Pages: 393-396

    • NAID

      130004519104

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures2013

    • Author(s)
      M. Ikeda, K. Makihara and S. Miyazaki
    • Journal Title

      IEICE Trans. on Electronics

      Volume: E96-C Pages: 694-698

    • NAID

      110009588297

    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM2013

    • Author(s)
      N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki
    • Journal Title

      Trans. of MRS-J.

      Volume: 38 Pages: 393-396

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application2013

    • Author(s)
      S. Miyazaki
    • Journal Title

      MRS Proceedings

      Volume: 1510

    • DOI

      10.1557/opl.2013.272

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots2013

    • Author(s)
      .H. Takami, K. Makihara, M. Ikeda and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 4S Pages: 04CG08-04CG08

    • DOI

      10.7567/jjap.52.04cg08

    • NAID

      210000142065

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246054, KAKENHI-PROJECT-25709023
  • [Journal Article] Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application2013

    • Author(s)
      S. Miyazaki, M. Ikeda and K. Makihara
    • Journal Title

      ECS Trans.

      Volume: 58 Pages: 231-237

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma2013

    • Author(s)
      H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki
    • Journal Title

      Advanced Materials Research

      Volume: 750-752 Pages: 1011-1015

    • Data Source
      KAKENHI-PROJECT-24246054
  • [Journal Article] Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density2012

    • Author(s)
      K. Makihara, H. Deki, M Ikeda and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Pages: 04DG08-04DG08

    • DOI

      10.1143/jjap.51.04dg08

    • NAID

      210000140534

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053, KAKENHI-PROJECT-24246054
  • [Journal Article] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011

    • Author(s)
      S. Miyazaki
    • Journal Title

      ECS Trans

      Volume: Vol.41 Pages: 93-98

    • URL

      http://dx.doi.org/10.1149/1.3633288

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation of High-Density Pt Nanodots on SiO$_{2}$ Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory2011

    • Author(s)
      K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.50, No.8 Issue: 8 Pages: 08KE06-08KE06

    • DOI

      10.1143/jjap.50.08ke06

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures2011

    • Author(s)
      N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki
    • Journal Title

      Key Engineering Materials

      Volume: Vol.470 Pages: 135-139

    • DOI

      10.4028/www.scientific.net/kem.470.135

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell2011

    • Author(s)
      M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.50, No.4 Issue: 4 Pages: 04DD04-04DD04

    • DOI

      10.1143/jjap.50.04dd04

    • NAID

      210000070283

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053, KAKENHI-PROJECT-22685003
  • [Journal Article] High Density Formation of Ge Quantum Dots on SiO_22011

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki
    • Journal Title

      Solid State Electronics

      Volume: Vol.60 Pages: 65-69

    • URL

      http://dx.doi.org/10.1016/j.sse.2011.01.035

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011

    • Author(s)
      S.Miyazaki
    • Journal Title

      ECS Trans.

      Volume: 41 Pages: 93-98

    • DOI

      10.1149/1.3633288

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application2010

    • Author(s)
      S.Miyazaki
    • Journal Title

      Thin Solid Films

      Volume: 518

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application2010

    • Author(s)
      S.Miyazaki
    • Journal Title

      Thin Solid Films Vol.518

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2010

    • Author(s)
      A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys (in press)

    • NAID

      210000069046

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Formation of High Density Metal Silicide Nanodots on Ultrathin SiO_2 for Floating Gate Memory Application2010

    • Author(s)
      S.Miyazaki
    • Journal Title

      J.of Materials Science Forum

      Volume: 638-642 Pages: 1725-1730

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2009

    • Author(s)
      Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
    • Journal Title

      Solid State Phenomena Vol.154

      Pages: 95-100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Charge Strage Characteristics of Hybrid Nanodots Floating Gate2009

    • Author(s)
      S.Miyazaki
    • Journal Title

      ECS Trans. Vol.25, No.7

      Pages: 433-439

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2009

    • Author(s)
      K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, S. Miyazaki
    • Journal Title

      Trans. of MRS-J Vol.34,No.2

      Pages: 309-312

    • NAID

      130005003983

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2009

    • Author(s)
      K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, S. Miyazaki
    • Journal Title

      IEICE Trans. on Electronics Vol.E92-C,No.5

      Pages: 616-619

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Charge Strage Characteristics of Hybrid Nanodots Floating Gate2009

    • Author(s)
      S.Miyazaki
    • Journal Title

      ECS Trans Vol.25, No.7

      Pages: 433-439

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Formation of Metal Silicide Nanodots on Ultrathin SiO_2 for Floating Gate Application2009

    • Author(s)
      S.Miyazaki
    • Journal Title

      Solid State Phenomena Vol.154

      Pages: 95-100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Electrochemical Society Transaction 16

      Pages: 255-260

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi, s. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 3103-3106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Jpn. J. Appl. Phys Vol.47, No.4B

      Pages: 3103-3106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO_2 Structure as Evaluated by AFM/KFM2008

    • Author(s)
      K.Makihara, J. Nishitani, M. Ikeda, S. Higashi, S. Miyazaki
    • Journal Title

      Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C

    • NAID

      110006343827

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, K. Shimanoe. Y. Kawaguchi, M. Dceda, S. Higashi, S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 3103-3106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2008

    • Author(s)
      K. Makihara, J. Nishitani, M. Ikeda, S. Higashi and S, Miyazaki
    • Journal Title

      Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)

    • NAID

      110006343827

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Thin Solid Films 517

      Pages: 306-308

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
    • Journal Title

      Electrochemical Society Transaction 16

      Pages: 255-260

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, K. Makihara and M. Ikeda
    • Journal Title

      Thin Solid Films 517

      Pages: 41-44

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quanturn Dots/SiO2 Structure as Evaluated by AFM/KFM2008

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
    • Journal Title

      Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

      Pages: 712-715

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, s. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 3099-3102

    • NAID

      210000064670

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Self-Assembling Formation of Ni nanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Jpn. J. of Appl. Phys Vol.47, No.4

      Pages: 3099-3102

    • NAID

      210000064670

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, K. Makihara and M. Ikeda
    • Journal Title

      Thin Solid Films Vol.517, No. 1

      Pages: 41-44

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
    • Journal Title

      Thin Solid Films 517

      Pages: 306-308

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM2008

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Journal Title

      Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

      Pages: 712-715

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, K. Makihara, M. Ikeda
    • Journal Title

      Thin Solid Films 517

      Pages: 41-44

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Chargin Characteristics2008

    • Author(s)
      K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Hieashi and S. Miyazaki
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 3099-3102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quaatum Dots2007

    • Author(s)
      J. Xu, K. Makihara, H Deki, Y. Kawaguchi. H. Murakami, S. Higashi, S. Miyazaki
    • Journal Title

      Solid State Phenomena 121-123

      Pages: 557-560

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007

    • Author(s)
      R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
    • Journal Title

      Materials Science Forum 561-565

      Pages: 1213-1216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Characterization of Electronic Chareed States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007

    • Author(s)
      R. Nishihara, K. Makihara, Y. Kawaguchi, M. Bceda, H. Murakami, S. Higashi, S. Miyazaki
    • Journal Title

      Materials Science Forum 561-565

      Pages: 1213-1216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007

    • Author(s)
      S. Miyazaki, M. Ikeda and K. Makihara
    • Journal Title

      Electrochemical Society Transactions 11

      Pages: 233-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots2007

    • Author(s)
      J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
    • Journal Title

      Solid State Phenomena 121-123

      Pages: 557-560

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Aplication2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics

      Pages: 49-50

    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Electrochemical Society(ECS) Trans. 2・1

      Pages: 157-157

    • NAID

      120006665133

    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Electrochemical Society(ECS) Trans. 2・1

      Pages: 157-157

    • NAID

      120006665133

    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Aplication2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics

      Pages: 49-50

    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006

    • Author(s)
      S.Miyazaki, M.Ikeda, K.Makihara
    • Journal Title

      ESC Trans. 2(印刷中)

    • NAID

      120006665133

    • Data Source
      KAKENHI-PROJECT-17636001
  • [Journal Article] Self-assembling Formation of Silicon-Based Quantum Dots and Control of Their Electric Charged States for Multiple-Valued Memories2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Collected Abst. of 2006 RCIQE Int.Seminar for 21st Century COE Program : "Quantum Nanoelectronics for Meme-Media-Based Information Technologies(IV)"

      Pages: 41-44

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology

      Pages: 736-739

    • Data Source
      KAKENHI-PROJECT-18206035
  • [Journal Article] Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories2006

    • Author(s)
      S.Miyazaki
    • Journal Title

      Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology

      Pages: 736-739

    • Data Source
      KAKENHI-PROJECT-18063017
  • [Journal Article] Self-Assembling Formation of Si-based Quantum Dots and Control of Their Electric Charged States for Multi-valued Memories2005

    • Author(s)
      S.Miyazaki
    • Journal Title

      SPIE conference on Nanofabrication : Technologies, Devices, and Applications II (SA111) at Optics East

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2005

    • Author(s)
      T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      IEICE Trans.on Electronics E88-C/4(In press)

    • NAID

      110003309214

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Multi Step Electron Chargeing to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005

    • Author(s)
      T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]

      Pages: 110-111

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005

    • Author(s)
      T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]

      Pages: 174-175

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] 自己組織化シリコン系量子ドットを用いた次世代・機能メモリ開発2005

    • Author(s)
      宮崎誠一
    • Journal Title

      月刊マテリアルステージ 5-3

      Pages: 18-24

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique2005

    • Author(s)
      J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]

      Pages: 177-180

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005

    • Author(s)
      J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]

      Pages: 294-295

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Control of Discrete Charged States in Si-Based Quantum Dots and Its Application to Floating Gate Memories2005

    • Author(s)
      S.Miyazaki
    • Journal Title

      Proc.of Int.Symp.on Surface Science and Nanotechnology

      Pages: 541-541

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005

    • Author(s)
      K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]

      Pages: 100-101

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005

    • Author(s)
      K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

      Pages: 32-33

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memorie2005

    • Author(s)
      S.Miyazaki
    • Journal Title

      Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics

      Pages: 39-40

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Control of the nucleation density of si quantum dots by remote hydrogen plasma treatment2005

    • Author(s)
      K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Applied Surface Science 244/1-4

      Pages: 75-78

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] シリコン系量子ドットのフローティングゲートMOSデバイス応用2005

    • Author(s)
      宮崎誠一
    • Journal Title

      表面技術 56-12

      Pages: 162-168

    • NAID

      10016921340

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005

    • Author(s)
      J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]

      Pages: 112-113

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004

    • Author(s)
      T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]

      Pages: 100-101

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr2004

    • Author(s)
      K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]

      Pages: 54-55

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004

    • Author(s)
      T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]

      Pages: 126-127

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures2004

    • Author(s)
      S.Miyazaki, T.Shibaguchi, M.Ikeda
    • Journal Title

      Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2004

    • Author(s)
      T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]

      Pages: 126-127

    • NAID

      110003309214

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories2004

    • Author(s)
      S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-31]

      Pages: 82-83

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD with Remote Plasma Treatments2004

    • Author(s)
      K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]

      Pages: 90-91

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of Single Si Quantum Dots with Ge Core Using AFM/Kelvin Probe Technique2004

    • Author(s)
      Y.Darma, K.Takeuchi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]

      Pages: 52-53

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique2004

    • Author(s)
      K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)

    • NAID

      110003309216

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2004

    • Author(s)
      M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]

      Pages: 50-51

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots2004

    • Author(s)
      T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]

      Pages: 98-99

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures2004

    • Author(s)
      S.Miyazaki, T.Shibaguchi, M.Ikeda
    • Journal Title

      Abst. of 2004 MRS Fall Meeting(Boston, U.S.A., Nov. 29-Dec. 3,2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly Selective Grown Si Dots with Ge Core2004

    • Author(s)
      Y.Darma, Hideki Murakami, S.Miyazaki
    • Journal Title

      Applied Surface Science 244/1-4

      Pages: 156-159

    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Electronic Transport through Si Dot with Ge Core as Detected by AFM Conductive Probe2004

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-34]

      Pages: 88-89

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment2004

    • Author(s)
      K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]

      Pages: 137-137

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots floating Gate2003

    • Author(s)
      T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

    • NAID

      110003308511

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2003

    • Author(s)
      M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Self-Assembling of Si Quantum Dots and Their Application to Memory Devices2003

    • Author(s)
      S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments2003

    • Author(s)
      K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories2003

    • Author(s)
      M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Transport Through Si Dot with Ge Core Using AFM Conducting Probe2003

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31,2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected by Raman and Photoemission Spectroscopy2003

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

    • NAID

      110003308506

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique2003

    • Author(s)
      Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe2003

    • Author(s)
      K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

    • NAID

      110003308430

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core2003

    • Author(s)
      Y.Darma, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelviin Probe Technique2003

    • Author(s)
      Y.Darma, K.Takeuchi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si02 by Combination of Low-Pressure CVD with Remote Plasma Treatments

    • Author(s)
      K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]

      Pages: 90-91

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases

    • Author(s)
      T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]

      Pages: 174-175

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots

    • Author(s)
      T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]

      Pages: 273-276

    • NAID

      110003309214

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique

    • Author(s)
      Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]

      Pages: 44-45

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories

    • Author(s)
      S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-31]

      Pages: 82-83

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment

    • Author(s)
      K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]

      Pages: 137-137

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr

    • Author(s)
      K.Makihara.Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]

      Pages: 54-55

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories

    • Author(s)
      T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]

      Pages: 100-101

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots

    • Author(s)
      T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]

      Pages: 98-99

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs

    • Author(s)
      M.Ikeda, Y.Shimizu, T.Shibaguchi H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]

      Pages: 846-847

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected by Raman and Photoemission Spectroscopy

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.3]

      Pages: 145-149

    • NAID

      110003308506

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Electronic Transport through Si Dot with Ge Core as Detected by AFM Conductive Probe

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-34]

      Pages: 88-89

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs

    • Author(s)
      M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]

      Pages: 50-51

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures

    • Author(s)
      S.Miyazaki, T.Shibaguchi, M.Ikeda
    • Journal Title

      Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004) NO.1013

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate

    • Author(s)
      T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]

      Pages: 151-154

    • NAID

      110003308511

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

    • Author(s)
      K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

      Pages: 32-33

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core

    • Author(s)
      Y.Darma, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]

      Pages: 209-210

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

    • Author(s)
      M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh
    • Journal Title

      IEICE

      Volume: Vol.94-C, No.5 Pages: 730-736

    • NAID

      10029505917

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Journal Article] Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelviin Probe Technique

    • Author(s)
      Y.Darma, K.Takeuchi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-3-3]

      Pages: 300-301

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot. Floating Gate in Metal-Oxide-Semiconductor Memories

    • Author(s)
      T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]

      Pages: 126-127

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of Single Si Quantum Dots with Ge Core Using AFM/Kelvin Probe Technique

    • Author(s)
      Y.Darma, K.Takeuchi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-18]

      Pages: 52-53

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Self-Assembling of Si Quantum Dots and Their Application to Memory Devices

    • Author(s)
      S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-16]

      Pages: 40-41

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique

    • Author(s)
      K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
    • Journal Title

      Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]

      Pages: 277-280

    • NAID

      110003309216

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories

    • Author(s)
      M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
    • Journal Title

      Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]

      Pages: 42-43

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si0_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments

    • Author(s)
      K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S., Higashi, S.Miyazaki
    • Journal Title

      Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]

      Pages: 216-217

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures

    • Author(s)
      S.Miyazaki, T.Shibaguchi, M.Ikeda
    • Journal Title

      Abst. of 2004 MRS Fall Meeting (Boston, U.S.A., Nov. 29-Dec. 3, 2004) D5-8

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Characterization of Electronic Transport Through Si Dot with Ge Core Using AFM Conducting Probe

    • Author(s)
      Y.Darma, S.Miyazaki
    • Journal Title

      Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31, 2003) [29B-2-3]

      Pages: 22-23

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe

    • Author(s)
      K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H..Murakami, S.Miyazaki
    • Journal Title

      Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]

      Pages: 37-40

    • NAID

      110003308430

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法2010

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2010-01-14
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Patent] 測定装置および測定方法2010

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2010-02-04
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドジトの製造方法2010

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      国立大学法人広島大学
    • Filing Date
      2010-01-14
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 測定装置および測定方法2010

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      国立大学法人広島大学
    • Filing Date
      2010-02-04
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 測定装置および測定方法2008

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Acquisition Date
      2008-07-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Patent] 測定装置および測定方法2008

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2008-07-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体素子2008

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎, 村上秀樹
    • Patent Publication Number
      2008-288346
    • Filing Date
      2008-11-27
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 測定装置および測定方法2008

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Industrial Property Number
      2008-552633
    • Filing Date
      2008-07-31
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Patent Publication Number
      2008-270705
    • Filing Date
      2008-11-06
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 測定装置および測定方法2008

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2008-07-31
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2008-03-01
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2007-12-06
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Patent] 半導体素子2007

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2007-12-06
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体メモリ2007

    • Inventor(s)
      牧原克典, 宮崎誠一, 東清一郎
    • Industrial Property Number
      2007-009772
    • Filing Date
      2007-03-11
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2007-12-06
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Patent] 半導体素子2007

    • Inventor(s)
      牧原克典、宮崎誠一、東清一郎
    • Industrial Property Rights Holder
      広島大学
    • Filing Date
      2007-12-06
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Patent] MOS電界効果トランジスタ型量子ドット発光素子および受光素子、これらを利用した光電子集積チップ2004

    • Inventor(s)
      宮崎 誠一, 東 清一郎
    • Industrial Property Rights Holder
      宮崎 誠一, 東 清一郎
    • Industrial Property Number
      2004-207620
    • Filing Date
      2004-07-14
    • Data Source
      KAKENHI-PROJECT-15206035
  • [Presentation] B添加がGeコアSi量子ドットのPL特性に及ぼす影響2019

    • Author(s)
      永井僚, 藤森俊太郎, 前原拓哉, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi 量子ドット/Si 量子ドット多重連結構造からの電界電子放出特性および電子放出エネルギー評価2019

    • Author(s)
      二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si量子ドット多重連結構造からの電界電子放出特性 - 積層数依存性2019

    • Author(s)
      竹本竜也, 二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Electron Field Emission from MultiplyStacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots2019

    • Author(s)
      Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials /12th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] mpact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties2019

    • Author(s)
      Ryo Nagai, Shuntaro Fujimori, Takuya Maehara, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials /12th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si-Ge系コア・シェル構造の高密度集積と光・電子物性制御2019

    • Author(s)
      宮崎誠一
    • Organizer
      市民公開講座 Siナノテクノロジー最前線
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Study on photoluminescence from Si quantum dots with Ge core2018

    • Author(s)
      Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki
    • Organizer
      International Conference of Atomic Control Surface and Interface-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2018

    • Author(s)
      Y. Futamura, Y. Nakashima, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si-Geナノ構造制御で展開する電子デバイス開発2018

    • Author(s)
      牧原克典、宮崎誠一
    • Organizer
      2018年日本表面真空学会中部支部研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] P添加GeコアSi量子ドットの帯電および電子輸送特性評価2018

    • Author(s)
      永井僚、山田健太郎、藤森俊太郎、池田弥央、牧原克典、大田晃生、宮崎誠一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子トドット/Si量子トドット多重集積構造からの電界電子放出2018

    • Author(s)
      二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Electroluminescence from Si-QDs with Ge Core2018

    • Author(s)
      R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] ナノ構造制御で展開する電子デバイス開発と機能進化・高度化への挑戦2018

    • Author(s)
      牧原克典、宮崎誠一
    • Organizer
      第3回ニューフロンティアリサーチワークショップ
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy2018

    • Author(s)
      Y. Nakashima, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
    • Organizer
      10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs2018

    • Author(s)
      Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
    • Organizer
      12th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electron Charging and Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018

    • Author(s)
      Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
    • Organizer
      9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Electroluminescence from Multiply Stacked Si Quantum Dots with Ge Core by Alternate Carrier Injection2018

    • Author(s)
      Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
    • Organizer
      9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 光電子収率分光法による熱酸化SiO2/Si構造の電子状態計測2018

    • Author(s)
      大田晃生、今川拓哉、池田弥央、牧原克典、宮崎誠一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Ge/Si量子ドット上へのSi選択成長および発光特性評価2018

    • Author(s)
      藤森俊太郎, 山田健太郎, 永井僚, 牧原克典, 池田弥央, 宮崎誠一
    • Organizer
      第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electron Charging and Local Electron Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018

    • Author(s)
      Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki
    • Organizer
      Japan Student Chapter Meeting 2018 in Osaka
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electron Field Emission from Multiple-Stacking Si Quantum Dots with Ge Core2018

    • Author(s)
      Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki
    • Organizer
      2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Ge/Si量子ドット上へのSi選択成長と室温PL特性2018

    • Author(s)
      藤森俊太郎、山田健太郎、永井僚、池田弥央、牧原克典、宮崎誠一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Photoemission Study of Gate Dielectrics and Stack Interfaces2018

    • Author(s)
      S. Miyazaki, and A. Ohta
    • Organizer
      2018 International Conference of Solid State of Device and Materials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Selective Growth of Si for the Formation of Si-QDs with Ge Core and Their Photoluminescence Properties2018

    • Author(s)
      Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
    • Organizer
      12th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドット/Si量子ドット多重集積構造からの弾道電子放出2018

    • Author(s)
      二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造からのエレクトロルミネッセンス2018

    • Author(s)
      牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Luminescence Studies of Multiply Stacked Si Quantum Dots with Ge Core2018

    • Author(s)
      K. Makihara, M. Ikeda, S. Miyazaki
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] P添加GeコアSi量子ドットの帯電および局所電気特性評価2018

    • Author(s)
      永井僚, 藤森俊太郎, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
    • Organizer
      第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si-Ge系コア・シェル量子構造の高密度集積と光・電子物性制御2018

    • Author(s)
      宮崎誠一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots2017

    • Author(s)
      Y. Nakashima, D. Takeuchi, K. Makihara , A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Year and Date
      2017-02-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si細線構造への高密度Si量子ドット形成と発光特性2017

    • Author(s)
      高磊、池田弥央、山田健太郎、牧原克典、大田晃生、宮崎誠一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-05
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Fabrication and characterization of multistack Si/Ge quantum dots for light emission devices2017

    • Author(s)
      S. Miyazaki
    • Organizer
      The 5th Int. Conf. on Advanced Materials Science and Technology
    • Place of Presentation
      Makassar, Indonesia
    • Year and Date
      2017-09-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットの発光特性評価2017

    • Author(s)
      山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-05
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 硬X線光電子分光を用いたSi量子ドット多重集積構造の電位分布評価2017

    • Author(s)
      中島裕太、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-05
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis2017

    • Author(s)
      A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
    • Organizer
      20th Conference on Insulating Films on Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] High Density Formation of and Light Emission from Si-Quantum Dots with Ge core2017

    • Author(s)
      S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara
    • Organizer
      MRS spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 硬X線光電子分光法によるSi量子ドット多重集積構造のオペランド分析2017

    • Author(s)
      中島裕太、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017

    • Author(s)
      K. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Coventry, UK
    • Year and Date
      2017-05-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate2017

    • Author(s)
      K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017

    • Author(s)
      Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
    • Organizer
      The 10th International Conference on Silicon Epitaxy and heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017

    • Author(s)
      K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
    • Organizer
      The 10th International Conference on Silicon Epitaxy and heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017

    • Author(s)
      A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
    • Organizer
      20th Conference on Insulating Films on Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Luminescence Studies of High Density Si Quantum Dots with Ge core2017

    • Author(s)
      K. Yamada, M. Ikeda, K. Makihara and S. Miyazaki
    • Organizer
      10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Year and Date
      2017-02-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Study of Light Emission from Si Quantum Dots with Ge core2017

    • Author(s)
      S. Miyazaki
    • Organizer
      Int. Conf. on Frontiers in Materials Processing, Application, Research & Technology
    • Place of Presentation
      Bordeaux, France
    • Year and Date
      2017-07-09
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices2017

    • Author(s)
      S. Miyazaki
    • Organizer
      The Semiconductor Process Integration 10 Conf.
    • Place of Presentation
      National Harbor, Maryland
    • Year and Date
      2017-10-01
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates2017

    • Author(s)
      M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta and S. Miyazaki
    • Organizer
      10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Year and Date
      2017-02-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットのEL特性評価2017

    • Author(s)
      山田健太郎、池田弥生、牧原克典、大田晃生、宮崎誠一
    • Organizer
      第5回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造の発光特性2017

    • Author(s)
      牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 高密度GeコアSi量子ドットの室温EL特性評価2017

    • Author(s)
      山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
    • Organizer
      第17回日本表面科学会中部支部学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017

    • Author(s)
      Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Coventry, UK
    • Year and Date
      2017-05-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットの発光メカニズム2016

    • Author(s)
      近藤 圭悟、池田 弥央、牧原 克典、宮崎 誠一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core2016

    • Author(s)
      K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki
    • Organizer
      230th Meeting of The Electrochemical Society
    • Place of Presentation
      Honolulu, HI
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドット/Si量子ドット多重集積構造のEL特性2016

    • Author(s)
      竹内大智、山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of light emission from Si quantum dots with Ge core2016

    • Author(s)
      S. Miyazaki
    • Organizer
      Int. Conf. on Processing and Manufacturing of Advanced Materials 2016
    • Place of Presentation
      Granz, Austria
    • Year and Date
      2016-05-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core2016

    • Author(s)
      Seiichi Miyazaki
    • Organizer
      BIT's 2nd Annual World Congress of Smart Materials-2016
    • Place of Presentation
      Singapore
    • Year and Date
      2016-03-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices2016

    • Author(s)
      S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara
    • Organizer
      2016 Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2016-09-27
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots2016

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
    • Organizer
      9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Year and Date
      2016-01-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットにおけるGeコアサイズがPL特性に及ぼす影響2016

    • Author(s)
      山田 健太郎、近藤 圭悟、池田 弥央、牧原 克典、宮崎 誠一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットのエレクトロルミネッセンス特性2016

    • Author(s)
      山田健太郎、池田弥央、牧原克典、宮崎誠一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties2016

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
    • Organizer
      7th Int. Symposium on Control of Semiconductor Interfaces and 8th Int. SiGe Technology and Device Meeting joint meeting
    • Place of Presentation
      Nagoya
    • Year and Date
      2016-06-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] High Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core2016

    • Author(s)
      S. Miyazaki
    • Organizer
      11th Workshop on Si-based Optoelectronic Materials and Devices
    • Place of Presentation
      Nanjing, China
    • Year and Date
      2016-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Processing and Characterization of Si/Ge Quantum Dots2016

    • Author(s)
      S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
    • Organizer
      Int. Electron Devices Meeting 2016
    • Place of Presentation
      San Francisco, CA
    • Year and Date
      2016-11-03
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si系量子ドット多重集積構造からの電界電子放出特性2016

    • Author(s)
      中島裕太、大田晃生、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      2016真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2016-11-29
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Si細線構造への高密度Si量子ドット形成2016

    • Author(s)
      高磊、竹内大智、牧原克典、池田弥央、大田晃生、宮崎誠一
    • Organizer
      2016真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2016-11-29
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] 外部磁場が高密度FePtナノドットスタック構造の電子輸送特性に及ぼす影響2015

    • Author(s)
      河瀬平雅、満行優介、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H02239
  • [Presentation] Si量子ドット多重集積構造からの電子放出特性評価2015

    • Author(s)
      竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第15回日本表面科学会中部支部研究会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-12-19
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットからのフォトルミネッセンス特性―温度依存性2015

    • Author(s)
      近藤圭悟、牧原克典、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会 2015
    • Place of Presentation
      名古屋
    • Year and Date
      2015-11-17
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Characterization of Field Emission Properties from Multiply-Stacking Si Quantum Dots2015

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki
    • Organizer
      JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Marseille, France
    • Year and Date
      2015-07-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core2015

    • Author(s)
      K. Kondo, K. Makihara, A. Ohta and S. Miyazaki
    • Organizer
      2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] GeコアSi量子ドットからの発光スペクトル―温度依存性2015

    • Author(s)
      近藤圭悟、牧原克典、宮崎誠一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] P添加Si量子ドット多重集積構造の電界電子放出特性評価2015

    • Author(s)
      竹内大智、牧原克典、大田晃生、宮崎誠一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H05762
  • [Presentation] KFMによるFePtナノドットスタック構造の局所帯電評価2015

    • Author(s)
      満行優介、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H02239
  • [Presentation] Characterization of Electronic Charged States of Self-Aligned Coupled2014

    • Author(s)
      K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] P添加GeコアSi量子ドットのフォトルミネッセンス特性評価2014

    • Author(s)
      近藤圭悟、鈴木善久、牧原克典、池田弥央、小山剛史、岸田英夫、宮崎誠一
    • Organizer
      第61回春季応用物理学会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] P/N制御Si量子ドット多重集積構造のエレクトロルミネッセンス2014

    • Author(s)
      山田敬久、牧原克典、鈴木喜久、池田弥央、宮崎誠一
    • Organizer
      第61回春季応用物理学会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots2014

    • Author(s)
      T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda and S. Miyazaki
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Mnナノドットを埋め込んだSiOx-Ni電極MIMダイオードの抵抗変化特性2014

    • Author(s)
      荒井崇、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第14回日本表面科学会中部支部研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-12-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価(II)2014

    • Author(s)
      竹内大智、大田晃生、牧原 克典、池田 弥央、宮崎 誠一
    • Organizer
      第61回春季応用物理学会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] GeコアSi量子ドットのフォトルミネッセンス特性評価2014

    • Author(s)
      近藤圭悟、牧原克典、池田弥央、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Niナノドットを電極に用いたSiOx-ReRAMの抵抗変化特性2014

    • Author(s)
      加藤祐介、劉冲、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ支援によるSiO2上へのFeシリサイドドットの高密度形成2014

    • Author(s)
      張海、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Photoluminescence Study of Si Quantum Dots with Ge Core2014

    • Author(s)
      K. Makihara, K. Kondo, M. Ikeda and S. Miyazaki
    • Organizer
      2014 ECS and SMEQ Joint International Meeting
    • Place of Presentation
      Mexico
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] AFM/KFMによる自己整合一次元連結Si量子ドットの局所帯電評価2014

    • Author(s)
      恒川 直輝、牧原 克典、池田 弥央、宮崎 誠一
    • Organizer
      第61回春季応用物理学会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Mnナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性2014

    • Author(s)
      荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots2014

    • Author(s)
      Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Mnナノドットを埋め込んだNi/SiOx/Ni構造の抵抗変化特性2014

    • Author(s)
      荒井崇、大田晃生、牧原克典、宮崎誠一
    • Organizer
      電気通信情報学会(SDM) [シリコン材料・デバイス]
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Si量子ドット多重集積構造からの電界電子放出特性評価2014

    • Author(s)
      竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] ナノドットを電極に用いたNi/SiOx/Niダイオードの抵抗変化特性評価2014

    • Author(s)
      大田晃生、劉冲、荒井崇、竹内大智、張海、牧原克典、宮崎誠一
    • Organizer
      電気通信情報学会(SDM) [シリコン材料・デバイス]
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] FePt合金ナノドットの高密度形成と磁化特性評価2014

    • Author(s)
      満行優介、張海、牧原克典、大田晃生、徳岡良浩、加藤剛志、岩田聡、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス特性評価2014

    • Author(s)
      山田敬久、牧原克典、池田弥央、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Ge 基板中のAs高効率活性化と低抵抗浅接合形成2014

    • Author(s)
      浜田慎也、村上秀樹、小野貴寛、橋本邦明、大田晃生、花房宏明、東清一郎、宮崎誠一
    • Organizer
      電気通信情報学会(SDM) [シリコン材料・デバイス]
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ支援によるSiO2上へのFeシリサイドナノドットの高密度一括形成2014

    • Author(s)
      張海、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第14回日本表面科学会中部支部研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-12-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] CoPt合金ナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性2014

    • Author(s)
      壁谷悠希、張海、福岡諒、大田晃生、牧原克典、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Alignment Control and Electrical Coupling of Si-based Quantum Dots2014

    • Author(s)
      K. Makihara and S. Miyazaki
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy2014

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      2014 ECS and SMEQ Joint International Meeting
    • Place of Presentation
      Mexico
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモートH2プラズマ処理が4H-SiC(0001)の表面マイクロラフネス及び欠陥準位密度に与える影響2014

    • Author(s)
      グェンスァンチュン、大田晃生、竹内大智、牧原克典、宮崎誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-11-08
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots2013

    • Author(s)
      T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda and S. Miyazaki
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures and the 6th International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots2013

    • Author(s)
      Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki
    • Organizer
      2013 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Fukuoka
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Formation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodes2013

    • Author(s)
      K. Makihara and S. Miyazaki
    • Organizer
      26th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Hokkaido
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価2013

    • Author(s)
      竹内大智、牧原克典、池田弥央、宮崎誠一
    • Organizer
      第74回秋季応用物理学会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices2013

    • Author(s)
      S. Miyazaki
    • Organizer
      6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      仙台
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] バイアス印加が一次元連結Si系量子ドットのPL特性に及ぼす影響2013

    • Author(s)
      鈴木善久、牧原克典、池田弥央、宮崎誠一
    • Organizer
      第74回秋季応用物理学会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Formation and characterization of hybrid nanodots embedded in gate dielectric for optoelectronic application2013

    • Author(s)
      S. Miyazaki
    • Organizer
      International conference on Processing and Manufacturing of advanced materials 2013
    • Place of Presentation
      Las Vegas, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] AFM/KFMによる一次元連結・高密度Si系量子ドットにおける帯電電荷の経時変化計測2013

    • Author(s)
      恒川 直輝、牧原 克典、池田 弥央、宮崎 誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2013
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application2013

    • Author(s)
      K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, S. Miyazaki
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures and the 6th International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots2013

    • Author(s)
      H. Niimi, K. Makihara, M. Ikeda and S. Miyazaki
    • Organizer
      2013 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Fukuoka
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 一次元連結Si系量子ドットの電界発光減衰特性2013

    • Author(s)
      鈴木 善久、牧原 克典、池田 弥央、宮崎 誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2013
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Optoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gate2013

    • Author(s)
      S. Miyazaki
    • Organizer
      2013 Energy Mmterials Nanotechnology Fall Meeting
    • Place of Presentation
      Orando, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] B添加Si量子ドット多重集積構造のエレクトロルミネッセンス2013

    • Author(s)
      山田 敬久、牧原 克典、鈴木 善久、宮崎 誠一
    • Organizer
      応用物理学会SC東海地区学術講演会2013
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Study On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Application2013

    • Author(s)
      S. Miyazaki
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices2013

    • Author(s)
      S. Miyazaki, K. Makihara and M. Ikeda
    • Organizer
      JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Fukuoka
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 一次元連結Si系量子ドットのEL特性評価2012

    • Author(s)
      高見弘貴,牧原克典,出木秀典,池田弥央,宮崎誠一
    • Organizer
      第59回春季応用物理学会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] AFM/KFMによる一次元連結・高密度Si系量子ドットの帯電状態の経時変化計測2012

    • Author(s)
      牧原克典,恒川直輝,池田弥央,宮崎誠一
    • Organizer
      第59回春季応用物理学会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO_2 and Its Application to Light Emitting Diodes2012

    • Author(s)
      K. Makihara, H. Deki, M. Ikeda and S. Miyazaki
    • Organizer
      4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma2012)
    • Place of Presentation
      Kasugai
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 一次元縦積み連結Si系量子ドットの室温共鳴トンネル伝導2012

    • Author(s)
      牧原克典,池田弥央,宮崎誠一
    • Organizer
      第59回春季応用物理学会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 熱プラズマジェットを用いたミリ秒熱処理によるPtおよびPtシリサイドナノドットの形成とフローティングゲートメモリ応用2012

    • Author(s)
      牧原克典,山根雅人,池田弥央,東清一郎,宮崎誠一
    • Organizer
      第59回春季応用物理学会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Si量子ドット/NiSiナノドットハイブリッドフローティングゲートにおける光励起電子のパルス電圧応答2012

    • Author(s)
      池田弥央,牧原克典,宮崎誠一
    • Organizer
      第59回春季応用物理学会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of PtAl-Alloy Nanodots on Ultrathin SiO_2 Induced by Remote Hydrogen Plasma2012

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
    • Organizer
      The 5th International Conference on Plasma-Nano Technology & Science(IC-PLANTS 2012)
    • Place of Presentation
      Inuyama
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 一次元縦積連結シリコン系量子ドットの形成と発光ダイオードへの応用2012

    • Author(s)
      牧原克典,宮崎誠一
    • Organizer
      ED/CPM/SDM研究会
    • Place of Presentation
      豊橋技術科学大学ベンチャー・ビジネス・ラボラトリー
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of High Density Ge Quantum Dots and Their Electrical Properties2012

    • Author(s)
      M. Ikeda, K. Makihara, A. Ohta and S. Miyazaki
    • Organizer
      The 5th International Conference on Plasma-Nano Technology & Science(IC-PLANTS 2012)
    • Place of Presentation
      Inuyama
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors2011

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
    • Organizer
      2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2011)
    • Place of Presentation
      Daejeon, Korea
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices2011

    • Author(s)
      S.Miyazaki
    • Organizer
      15th International Conference on Thin Films
    • Place of Presentation
      Kyoto (Japan)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] ランプセッション「エレクトロニクスを支える電子材料~2020年への展望~」(パネラー)2011

    • Author(s)
      宮崎誠一
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      守山市(滋賀県)(招待講演)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide- Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011

    • Author(s)
      S.Miyazaki
    • Organizer
      220th Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Boston (USA)(招待講演)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] ランプセッション「エレクトロニクスを支える電子材料~2020年への展望~2011

    • Author(s)
      宮崎誠一
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] プラズマジェット急速熱処理による高密度Ptナノドット形成とフローティングゲートメモリ応用2011

    • Author(s)
      牧原克典,池田弥央,山根雅人,東清一郎,宮崎誠一
    • Organizer
      第72回秋季応用物理学会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 化学気相成長法2011

    • Author(s)
      宮崎誠一
    • Organizer
      日本学術振興会薄膜第131委員会第28回薄膜スクール
    • Place of Presentation
      蒲群市(愛知県)(招待講演)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 一次元連結・高密度Si系量子ドットにおけるEL発光2011

    • Author(s)
      高見弘貴,牧原克典,出木秀典,池田弥央,宮崎誠一
    • Organizer
      第72回秋季応用物理学会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Application of Remote Hydrogen Plasma to Selective Processing for Gebased Devices-Crystallization, Etching and Metallization2011

    • Author(s)
      S.Miyazaki
    • Organizer
      The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011)
    • Place of Presentation
      Takayama
    • Year and Date
      2011-03-11
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 化学気相成長法2011

    • Author(s)
      宮崎誠一
    • Organizer
      日本学術振興会,薄膜第131委員会,第28回薄膜スクール
    • Place of Presentation
      松風園,蒲郡
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma2011

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki
    • Organizer
      15th International Conference on Thin Films(ICTF-15)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Characterization of La-and Mg-Diffused HfO_2/SiO_2 Stack Structures of for Next Generation Gate Dielectrics2011

    • Author(s)
      S. Miyazaki
    • Organizer
      7th Pacific Rim International Conference on Advanced Materials and Processing(PRICM7)
    • Place of Presentation
      Cairns, Australia
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Characterization of La- and Mg-Diffused HfO_2/SiO_2 Stack Structures of for Next Generation Gate Dielectrics2011

    • Author(s)
      S.Miyazaki
    • Organizer
      7th Pacific Rim International Conference on Advanced Materials and Processing
    • Place of Presentation
      Cairns (Australia)(招待講演)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density2011

    • Author(s)
      K. Makihara, H. Deki, M Ikeda and S. Miyazaki
    • Organizer
      2011 International Conference on Solid State Devices and Materials(SSDM)
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011

    • Author(s)
      S. Miyazaki
    • Organizer
      220th Electrochemical Society(ECS) Meeting
    • Place of Presentation
      Boston, MA
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices2011

    • Author(s)
      S. Miyazaki, K. Makihara, A. Ohta and M. Ikeda
    • Organizer
      15th International Conference on Thin Films(ICTF-15)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of Hybrid Nanodots Floating Gate for Functional Memories2011

    • Author(s)
      S.Miyazaki
    • Organizer
      International Conference on Processing & Manufactturing of Advanced Materials
    • Place of Presentation
      Quebec (Canada)(招待講演)
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation of Hybrid Nanodots Floating Gate for Functional Memories2011

    • Author(s)
      S. Miyazaki
    • Organizer
      International Conference on Processing & Manufactturing of Advanced Materials(Themec' 2011)
    • Place of Presentation
      Quebec, Canada
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories2010

    • Author(s)
      S.Miyazaki
    • Organizer
      International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Fabrication and Characterization of Hybrid Nanodots for Floating Gate Application2010

    • Author(s)
      S.Miyazaki
    • Organizer
      International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
    • Place of Presentation
      Shanghai, China
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, MA
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009

    • Author(s)
      A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
    • Organizer
      The 2nd International Conference on Plasma-Nano Technology & Science
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] プラズマによる薄膜形成技術2009

    • Author(s)
      宮崎誠一
    • Organizer
      第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
    • Place of Presentation
      慶応義塾大学日吉キャンパス来往舎
    • Year and Date
      2009-10-29
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009年秋季 第70回応用物理学学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 「招待講演」メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009年秋季第70回応用物理学学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009年秋季第70回応用物理学学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2009

    • Author(s)
      A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki
    • Organizer
      International Symposium on Dry Process (DPS2009)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] 「シリコンテクノロジーの挑戦-材料・プロセス・デバイスの新展開」について2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009年秋季 第70回応用物理学学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 「招待講演」プラズマによる薄膜形成技術2009

    • Author(s)
      宮崎誠一
    • Organizer
      第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
    • Place of Presentation
      慶応義塾大学日吉キャンパス来往舎
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Fun ctional Memories2009

    • Author(s)
      S.Miyazaki
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories2009

    • Author(s)
      S. Miyazaki, N. Morisawa, S. Nakanishi, A. Kawanami, M. Ikeda, K. Makihara
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009

    • Author(s)
      A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      The 2nd International Conference on Plasma-Nano Technology & Science
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] 低炭素社会の実現に向けた先端基盤技術-太陽光発電を中心として-2009

    • Author(s)
      宮崎誠一
    • Organizer
      第12回「フレッシュ理科教室」-楽しい理科授業のための教材研修ワークショップ-
    • Place of Presentation
      広島国際大学広島キャンパス国際教育センター
    • Year and Date
      2009-08-11
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] 「招待講演」低炭素社会の実現に向けた先端基盤技術-太陽光発電を中心として-2009

    • Author(s)
      宮崎誠一
    • Organizer
      第12回「フレットュ理科教室」-楽しい理科授業のための教材研修ワークショップ-
    • Place of Presentation
      広島国際大学広島キャンパス国際教育センター
    • Year and Date
      2009-08-11
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] 「招待講演」「シリコンテクノロジーの挑戦-材料・プロセス・デバイスの新展開」について2009

    • Author(s)
      宮崎誠一
    • Organizer
      2009年秋季第70回応用物理学学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] プラズマによる薄膜形成技術2009

    • Author(s)
      宮崎誠一
    • Organizer
      第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
    • Place of Presentation
      慶応義塾大学 日吉キャンパス 来往舎
    • Data Source
      KAKENHI-PROJECT-21246053
  • [Presentation] Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots2009

    • Author(s)
      K. Makihara, M. Ikeda, A. Kawanami, S. Miyazaki
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] NiSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける電荷注入・放出特性2009

    • Author(s)
      中西翔、池田弥央、森澤直也、牧原克典、川浪彰、東清一郎、宮崎誠一
    • Organizer
      第70回秋季応用物理学会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Si量子ドット/NiSiナノドットハイブリッド積層FG-MOS構造における光誘起電荷移動2009

    • Author(s)
      森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一
    • Organizer
      第70回秋季応用物理学会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure2009

    • Author(s)
      N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara, S. Miyazaki
    • Organizer
      2009 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
    • Organizer
      4th International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008

    • Author(s)
      K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki
    • Organizer
      International Union Material Research Societv (IUMRS) - International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      4th International SiGe Technology and Device Meeting
    • Place of Presentation
      Hsinchu, Taiwan
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Ni-and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories2008

    • Author(s)
      M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara and S. Miyazaki
    • Organizer
      The 2008 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008

    • Author(s)
      K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, s. Miyazaki
    • Organizer
      International Union Material Research Society (IUMRS) - International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Plasmaenhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application, (Invited: QI-8)2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
    • Organizer
      IUMRS International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008

    • Author(s)
      K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
    • Organizer
      International Union Material Research Society (IUMRS)-International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      4th International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2008

    • Author(s)
      K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, s. Miyazaki
    • Organizer
      2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Hokkaido
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2008

    • Author(s)
      s. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe
    • Organizer
      The European Materials Research Society2008 Fall Meeting
    • Place of Presentation
      Warszawa, Poland
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories2008

    • Author(s)
      M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara, s. Miyazaki
    • Organizer
      The 2008 International Meeting for Futureof Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
    • Organizer
      4th International SiGe Technology and Device Meeting
    • Place of Presentation
      Hsinchu, Taiwan
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
    • Organizer
      214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1 asma Assisted Technique2008

    • Author(s)
      K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki
    • Organizer
      The 4th Vacuum and Surface Sciences Conference of Asia and Australia
    • Place of Presentation
      Matsue
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of metal and silicide nanodots on ultathin gate oxide induced by H2-plasma2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
    • Organizer
      17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
    • Organizer
      International Union Material Research Society (IUMRS)- International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008

    • Author(s)
      K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      International Union Material Research Society (IUMRS)-International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots2008

    • Author(s)
      M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara, S. Miyazaki
    • Organizer
      2008 International Conference on Solid state Devices and Materials
    • Place of Presentation
      Tukuba
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of metal and silicide nanodots on uitathin gate oxide induced by H2-plasma2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
    • Organizer
      17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
    • Organizer
      4th International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of metal and silicide nanodots on ultrathin gate oxide induced by H2-plasma, (Invited : IO-11)2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
    • Organizer
      17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineering
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Fonnation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
    • Organizer
      4th International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1asma Assisted Technique2008

    • Author(s)
      K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, s. Higashi, s. Miyazaki
    • Organizer
      The 4th Vacuum and Surface Sciences Conference of Asia and Australia
    • Place of Presentation
      Matsue
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara and K. Shimanoe
    • Organizer
      The European Materials Research Society 2008 Fall Meeting
    • Place of Presentation
      Warszawa, Porland
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application2008

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
    • Organizer
      International Union Material Research Society (IUMRS)-International Conference in Asia
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008

    • Author(s)
      K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      214th Electrochemical Society (ECS) Meet ing : SiGe & Ge Materials, Processing, and Device Symposium
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories2007

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara
    • Organizer
      3nd International Wodcshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007

    • Author(s)
      K. Simanone, K. Makihara, A. Ohta, M. Ikeda, S. Higashi, S. Miyazaki
    • Organizer
      3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
    • Place of Presentation
      Sendai
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2007

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-22
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Phosphoras Doping to Si Quantum Dots for Floating Gate Application2007

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta, H. Murakami. R, Matsumoto, E. Ikenaga, M. Kobata, J. Kim S. Higashi, S. Miyazaki
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-06-11
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007

    • Author(s)
      K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      The European Materials Research Society 2007 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007

    • Author(s)
      K. Simanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      3nd International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Impact of Boron Doping to Si Quantum Dots on Light Emission Properties2007

    • Author(s)
      K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Gyeongju, Korea
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007

    • Author(s)
      S. Miyazaki
    • Organizer
      212th Electrochemical Society
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Self-Assembling Fonnation of Ninanodots on SiO_2 Induced by Remote H_-Plasma Treatment and Their Electrical Charging Characteristics2007

    • Author(s)
      K. Makihara, K. Shimanoe, M. Ikeda, S. Hieashi, S. Miyazaki
    • Organizer
      2007 International Conference on SoM State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2007

    • Author(s)
      R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2007

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Gyeongju, Korea
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007

    • Author(s)
      K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      The 2007 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Phosphorus Doping to Si Quantum Dots for Floating Gate Application2007

    • Author(s)
      K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-06-11
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Electroluminescence from Multiple-Stacked Structures of Impuity Doped Si Quan turn Dots2007

    • Author(s)
      K. Okuyama, K. Makihara, M. Ikeda. S. Hieashi, S. Miyazaki
    • Organizer
      2007 International Conference on SoHd State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007

    • Author(s)
      K. Makihara, K, Shimanoe, Y. Kawaguchi, M. Dceda, S. Higashi, S.Miyazaki
    • Organizer
      The European Materials Research Society 2007 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007

    • Author(s)
      K. Makihara, M. Dceda, S. Higashi, S. Miyazaki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-20
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Impact ofBoron Doping to Si Quaatum Dots on Light Emission Properties2007

    • Author(s)
      K. Okuyama, K・ Makihara, A.Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki
    • Organizer
      2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Gyeongju, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories2007

    • Author(s)
      S. Miyazaki
    • Organizer
      10th International Conference on Advanced Materials - International Union of Materials Research Societies
    • Place of Presentation
      Bangalore, India
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007

    • Author(s)
      S. Miyazaki
    • Organizer
      212th Electrochemical Society
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvin Probe Technique2007

    • Author(s)
      R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
    • Organizer
      The Sixth Pacific Rim International Conference on Advanced Materials and Processing
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2007

    • Author(s)
      S. Miyazaki, M. Ikeda and K. Makihara
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-22
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007

    • Author(s)
      K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-20
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007

    • Author(s)
      M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki
    • Organizer
      3nd International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO_2 Structure as Evaluated by AFM/KFM2007

    • Author(s)
      K. Maldhara, M. Ikeda, S. ffigashi, S. Miyazaki
    • Organizer
      2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Gyeongju, Korea
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007

    • Author(s)
      K. Makihara, Y. Kawaguchi, M. Deeda.S. Higashi, S. Miyazaki
    • Organizer
      The 2007 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-Plasma Treatment and Their Electrical Charging Characteristics2007

    • Author(s)
      K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots2007

    • Author(s)
      K. Okuyama, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
    • Organizer
      2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories2007

    • Author(s)
      S. Miyazaki
    • Organizer
      10th International Conference on Advanced Materials -International Union of Materials Research Societies
    • Place of Presentation
      Bangalore, India
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007

    • Author(s)
      M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi, S. Miyazaki
    • Organizer
      3nd International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories2007

    • Author(s)
      S. Miyazaki, M. Ikeda, K. Makihara
    • Organizer
      3nd International Workshop in New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18206035
  • [Presentation] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantuin-Dots Floating Gate by Applying Pulsed Gate Biases2007

    • Author(s)
      R, Matsumoto, M. Ikeda, S. Higiashi, S. Miyazaki
    • Organizer
      2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tukuba
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18063017
  • [Presentation] Study on Light Emission from Si Quantum Dots with Ge Core

    • Author(s)
      S. Miyazaki
    • Organizer
      The 9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17 – 2015-05-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots

    • Author(s)
      Y. Kabeya, H. Zhang, R. Fukuoka, A. Ohta, K. Makihara and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001)

    • Author(s)
      T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] High Density Formation of Mn and Mn-germanide Nanodots Induced by Remote Hydrogen Plasma

    • Author(s)
      Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma

    • Author(s)
      H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      27th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      福岡
    • Year and Date
      2014-11-04 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe

    • Author(s)
      T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electron Field Emission from High Density Self-Aligned Si-Based

    • Author(s)
      D Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
    • Organizer
      7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 光電子収率分光法によるSiO2/SiC構造の電子状態計測(2)

    • Author(s)
      大田晃生、渡邊浩成、グェンスァンチュン、牧原克典、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] P添加Si量子ドット多重集積構造の電界電子放出特性

    • Author(s)
      竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Photoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignments

    • Author(s)
      S. Miyazaki and A Ohta
    • Organizer
      JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2014-11-12 – 2014-11-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
    • Organizer
      JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2014-11-12 – 2014-11-13
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique

    • Author(s)
      K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki
    • Organizer
      2014 International SiGe Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-02 – 2014-06-07
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Photoluminescence Properties of Si Quantum Dots with Ge Core

    • Author(s)
      K. Kondo, K. Makihara and S. Miyazaki
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Study on Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots

    • Author(s)
      T. Yamada, K. Makihara, A. Ohta,M. Ikeda, S. Miyazaki
    • Organizer
      The 9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17 – 2015-05-22
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Si量子ドット多重集積構造の電界電子放出特性評価

    • Author(s)
      竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] P添加がGeコアSi量子ドットのPL特性に及ぼす影響

    • Author(s)
      近藤圭悟、牧原克典、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ支援によるFeシリサイドナノドットの高密度一括形成と磁化特性評価

    • Author(s)
      張海、牧原克典、大田晃生、壁谷悠希、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] High Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasma

    • Author(s)
      H. Zhang, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)

    • Author(s)
      H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi and S. Miyazaki
    • Organizer
      226th Meeting of The Electrochemical Society
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-06 – 2014-10-09
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 外部磁場がFePt合金ナノドットへの電子注入特性に及ぼす影響

    • Author(s)
      満行優介、壁谷悠希、張海、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Impact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxides

    • Author(s)
      T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki
    • Organizer
      2014 International SiGe Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-02 – 2014-06-07
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Mnナノドット埋め込みSiリッチ酸化膜の抵抗変化特性

    • Author(s)
      荒井崇、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Plasma-enhanced Self-assembling Formation of High-density Metallic Nanodots on Ultrathin SiO2

    • Author(s)
      K. Makihara and S. Miyazaki
    • Organizer
      Nagoya University (NU) & Sungkyunkwan University (SKKU) Joint Symposium 2014
    • Place of Presentation
      Suwon, Korea
    • Year and Date
      2014-11-26 – 2014-11-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements

    • Author(s)
      A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      金沢
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ処理した4H-SiC表面の化学構造および電子状態分析

    • Author(s)
      グェンスァンチュン、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 光電子収率分光法によるSiO2/SiC界面の電子状態計測

    • Author(s)
      大田晃生、竹内大智、グェンスァンチュン、牧原克典、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Impact of Phosphorus Doping to Multiply‐Stacking Si Quantum Dots on Electron Field Emission Properties

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta,M. Ikeda, S. Miyazaki
    • Organizer
      The 9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17 – 2015-05-22
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス

    • Author(s)
      山田敬久、牧原克典、池田弥央、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Si-rich酸化膜へのMnナノドット埋め込みが抵抗変化特性へ及ぼす影響

    • Author(s)
      荒井崇、大田晃生、牧原克典、宮崎誠一
    • Organizer
      ゲートスタック研究会 (第20回研究会)
    • Place of Presentation
      三島
    • Year and Date
      2015-01-29 – 2015-01-31
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electron Emission from High Density Self-aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
    • Organizer
      226th Meeting of The Electrochemical Society
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-06 – 2014-10-09
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 不純物添加がSi量子ドット多重集積構造のEL特性に及ぼす影響

    • Author(s)
      山田敬久、牧原克典、池田弥央、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] FePtナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性

    • Author(s)
      壁谷悠希、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Photoluminescence Study of Si Quantum Dots with Ge Core

    • Author(s)
      K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
    • Organizer
      226th Meeting of The Electrochemical Society
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-06 – 2014-10-09
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Luminescence Studies of High Density Si-based Quantum Dots

    • Author(s)
      K. Makihara, T. Yamada, K. Kondo and S. Miyazaki
    • Organizer
      JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2014-11-12 – 2014-11-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots

    • Author(s)
      D. Takeuchi, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote

    • Author(s)
      K. Makihara, H. Zhang, A. Ohta, S. Miyazaki
    • Organizer
      7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ支援によるTaナノドットの高密度一括形成

    • Author(s)
      王亜萍、牧原克典、大田晃生、竹内大智、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] 高密度FePtナノドットスタック構造の電子輸送特性

    • Author(s)
      壁谷悠希、満行優介、張海、大田晃生、牧原克典、宮崎誠一
    • Organizer
      第62回春季応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes

    • Author(s)
      A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] リモート水素プラズマ支援によるMn-Ge系ナノドットの高密度一括形成

    • Author(s)
      温映輝、牧原克典、大田晃生、宮崎誠一
    • Organizer
      第75回秋季応用物理学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] High Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma

    • Author(s)
      Y. Wen, K. Makihara, A. Ohta and S. Miyazaki
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots

    • Author(s)
      K. Makihara, R. Fukuoka, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki
    • Organizer
      International Union Material Research Society - International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Characterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dots

    • Author(s)
      T. Yamada, K. Makihara, M. Ikada and S. Miyazaki
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-24246054
  • [Presentation] Electroluminescence from Multiply-Stack of Doped Si Quantum Dots

    • Author(s)
      T. Yamada, K. Makihara, M. Ikeda and S. Miyazaki
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      筑波
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-24246054
  • 1.  HIROSE Masataka (10034406)
    # of Collaborated Projects: 11 results
    # of Collaborated Products: 0 results
  • 2.  MURAKAMI Hideki (70314739)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 54 results
  • 3.  HIGASHI Seiichiro (30363047)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 88 results
  • 4.  KOHNO Atsushi (30284160)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 5.  MAKIHARA Katsunori (90553561)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 165 results
  • 6.  ZAIMA Shigeaki (70158947)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 7.  TAKAGI Shinichi (30372402)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 8.  MASU Kazuya (20157192)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 9.  堀池 靖浩 (20209274)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 10.  川崎 昌博 (70110723)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 11.  HORI Masaru (80242824)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  TABATA Hitoshi (00263319)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 13.  HIRAMOTO Toshiro (20192718)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 14.  YOKOYAMA Shin (80144880)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 15.  末宗 幾夫 (00112178)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 16.  大田 晃生 (10553620)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 59 results
  • 17.  KIKKAWA Takamaro (60304458)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  Shiraishi Kenji (20334039)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  長田 昭義 (00164426)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  山西 正道 (30081441)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  中山 隆史 (70189075)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  初貝 安弘 (80218495)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  洗平 昌晃 (20537427)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  中塚 理 (20334998)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  KOTANI Hideo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  HAYASHI Toshio
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 27.  SAKURADA Yuzo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  IKEDA Mitsuhisa
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 67 results
  • 29.  三宅 潔
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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