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All Journal Article Presentation Book Patent
ECS Trans.
Volume: 104 Pages: 105-112
10.1149/10404.0105ecst
Applied Physics Express
Volume: 15 Pages: 055503-055503
10.35848/1882-0786/ac6727
Jpn. J. Appl. Phys.
Volume: 61
10.35848/1347-4065/ac2036
Volume: 60
10.35848/1347-4065/abdad0
Volume: 11 Issue: 1 Pages: 011305-011305
10.7567/apex.11.011305
210000136059
Volume: 58 Issue: SA Pages: SAAE01-SAAE01
10.7567/1347-4065/aaeb38
210000135209
Semicond. Sci. Technol.
Volume: 33 Pages: 124021-124021
Materials Science in Semiconductor Processing
Volume: 70 Pages: 183-187
Microelectronic Engineering
Volume: 178 Pages: 85-88
10.1016/j.mee.2017.05.001
Volume: 178 Pages: 80-84
10.1016/j.mee.2017.05.002
Volume: 56 Issue: 6S1 Pages: 06GG07-06GG07
10.7567/jjap.56.06gg07
Material Science in Semiconductor Processing
Volume: 印刷中
Journal of Applied Physics
Volume: 119
Thin Solid Films
Volume: 602 Pages: 68-71
Volume: 75 Pages: 695-700
Volume: 602 Pages: 48-51
J. Appl. Phys.
Volume: 119 Pages: 033103-033103
10.1063/1.4940348
Trans. of Mat. Res. Soc. Jpn
Volume: in press
Volume: 53 Issue: 11S Pages: 11RA02-11RA02
10.7567/jjap.53.11ra02
210000144616
Volume: 64 Pages: 365-370
AIP Advances
Volume: 4 Pages: 087110-087110
10.1063/1.4892823
IEICE Trans. on Electronics
Volume: Vol. E97-C Pages: 393-396
130004519104
Volume: 64 Pages: 241-248
Volume: 64 Pages: 923-928
Volume: Vol. E97-C Pages: 397-400
130004519105
Advanced Materials Research
Volume: 750-752 Pages: 1011-1015
Volume: 58 Pages: 231-237
MRS Proceedings
Volume: 1510
10.1557/opl.2013.272
Trans. of MRS-J.
Volume: 38 Pages: 393-396
Volume: E96-C Pages: 694-698
110009588297
Volume: 52 Issue: 4S Pages: 04CG08-04CG08
10.7567/jjap.52.04cg08
210000142065
Volume: 51 Issue: 4S Pages: 04DG08-04DG08
10.1143/jjap.51.04dg08
210000140534
Key Engineering Materials
Volume: Vol.470 Pages: 135-139
10.4028/www.scientific.net/kem.470.135
Volume: 41 Pages: 93-98
10.1149/1.3633288
Volume: Vol.50, No.4 Issue: 4S Pages: 04DD04-04DD04
10.1143/jjap.50.04dd04
Solid State Electronics
Volume: Vol.60 Pages: 65-69
http://dx.doi.org/10.1016/j.sse.2011.01.035
ECS Trans
Volume: Vol.41 Pages: 93-98
http://dx.doi.org/10.1149/1.3633288
Volume: Vol.50, No.8 Issue: 8S2 Pages: 08KE06-08KE06
10.1143/jjap.50.08ke06
Thin Solid Films Vol.518
Volume: 518
J.of Materials Science Forum
Volume: 638-642 Pages: 1725-1730
Jpn. J. Appl. Phys (in press)
210000069046
IEICE Trans. on Electronics Vol.E92-C,No.5
Pages: 616-619
ECS Trans. Vol.25, No.7
Pages: 433-439
Solid State Phenomena Vol.154
Pages: 95-100
ECS Trans Vol.25, No.7
Trans. of MRS-J Vol.34,No.2
Pages: 309-312
130005003983
Japanese Journal of Applied Physics 47
Thin Solid Films 517
Pages: 306-308
Japanese Journal of Applied Physics 47(in press)
Pages: 41-44
Pages: 3103-3106
Pages: 3099-3102
210000064670
Jpn. J. of Appl. Phys Vol.47, No.4
Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)
110006343827
Jpn. J. Appl. Phys Vol.47, No.4B
Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C
Thin Solid Films Vol.517, No. 1
Electrochemical Society Transaction 16
Pages: 255-260
Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C
Pages: 712-715
Materials Science Forum 561-565
Pages: 1213-1216
Electrochemical Society Transactions 11
Pages: 233-243
Solid State Phenomena 121-123
Pages: 557-560
Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology
Pages: 736-739
Collected Abst. of 2006 RCIQE Int.Seminar for 21st Century COE Program : "Quantum Nanoelectronics for Meme-Media-Based Information Technologies(IV)"
ESC Trans. 2(印刷中)
120006665133
Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics
Pages: 49-50
Electrochemical Society(ECS) Trans. 2・1
Pages: 157-157
IEICE Trans.on Electronics E88-C/4(In press)
110003175632
Proc.of Int.Symp.on Surface Science and Nanotechnology
Pages: 541-541
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]
Pages: 112-113
Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
Pages: 32-33
Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
Pages: 294-295
Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]
Pages: 174-175
表面技術 56-12
Pages: 162-168
10016921340
SPIE conference on Nanofabrication : Technologies, Devices, and Applications II (SA111) at Optics East
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]
Pages: 100-101
Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]
Pages: 110-111
2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
Pages: 177-180
月刊マテリアルステージ 5-3
Pages: 18-24
Applied Surface Science 244/1-4
Pages: 75-78
Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics
Pages: 39-40
Abst. of 2004 MRS Fall Meeting(Boston, U.S.A., Nov. 29-Dec. 3,2004)
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]
Pages: 98-99
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]
Pages: 90-91
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]
Pages: 126-127
Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]
Pages: 137-137
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-31]
Pages: 82-83
Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]
Pages: 52-53
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-34]
Pages: 88-89
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]
Pages: 54-55
Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004)
Pages: 156-159
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]
Pages: 50-51
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)
110003175633
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
110003175365
Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31,2003)
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)
Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)
110003175364
110003175342
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31, 2003) [29B-2-3]
Pages: 22-23
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-34]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]
Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]
IEICE
Volume: Vol.94-C, No.5 Pages: 730-736
10029505917
Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]
Pages: 216-217
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]
Pages: 846-847
Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]
Pages: 151-154
Abst. of 2004 MRS Fall Meeting (Boston, U.S.A., Nov. 29-Dec. 3, 2004) D5-8
Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004) NO.1013
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]
Pages: 277-280
Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]
Pages: 273-276
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]
Pages: 42-43
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]
Pages: 37-40
Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.3]
Pages: 145-149
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]
Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-3-3]
Pages: 300-301
Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-18]
Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-31]
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]
Pages: 44-45
Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-16]
Pages: 40-41
Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]
Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]
Pages: 209-210
