Takagi Shinichi 高木信一

… Alternative Names

TAKAGI Shinichi 高木信一

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Researcher Number	30372402
Other IDs
Affiliation (Current)	2023: 東京大学, 大学院工学系研究科(工学部), 教授
Affiliation (based on the past Project Information) *help	2016 – 2022: 東京大学, 大学院工学系研究科(工学部), 教授 2012 – 2015: 東京大学, 工学(系)研究科(研究院), 教授 2007 – 2011: The University of Tokyo, 大学院・工学系研究科, 教授 2009: 東京大学, 大学院・新領域創成科学研究科, 教授 2006: 東京大学, 大学院新領域創成科学研究科, 教授 2006: 東京大学, 新領域創成科学研究科, 教授 2004 – 2006: 東京大学, 大学院・新領域創成科学研究科, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Science and Engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields Except Principal Investigator Science and Engineering / Electron device/Electronic equipment / Thin film/Surface and interfacial physical properties / Engineering / Electron device/Electronic equipment
Keywords	Principal Investigator MOSFET / 移動度 / ゲルマニウム / III-V族半導体 / ひずみSi / クーロン散乱 / 反転層 / サブバンド / 3次元集積 / GOI … More / 面方位 / スピン / 強磁性 / 表面ラフネス / 界面準位 / 酸化膜信頼性 / トンネル電流 / ゲート電流 / 基板電流 / サブバンド構造 / バンド構造 / 一軸ひずみ / 正孔 / SiGe / 散乱機構 / strained-Si / mobility / tunneling current / Coulomb scattering / gate current / substrate current / subband structure / III-V族化合物半導体 / 結晶ひずみ / Ge / III-V / III-V半導体 / デバイス設計・製造プロセス … More Except Principal Investigator MOSFET / トンネリング / スケーリング則 / ゲルマニウム / III-V semiconductors / Ge / トンネルFET / デバイスシミュレーション / 極薄ボディMOSFET / バリスティック輸送 / III-V MOSFET / 面方位 / 量子閉じ込め効果 / バレー構造 / GaAs / シリコン / 超々大規模集積回路 / ナノ構造化メモリ / 三次元構造デバイス / シグナルインテグリティ / シリコンULSI / ポストスケーリング技術 / 電子デバイス / 半導体超微細化 / デバイス設計・製造プロセス・超薄膜 / ナノ材料 / ナノCMOS / ナノデバイスインテグリティ / 特性ばらつき / デバイス設計・製造プロセス / 超薄膜 / 錫 / 歪 / エピタキシャル成長 / CMOS / 表面・界面 / スズ(錫) / エネルギーバンド / ゲートスタック / スズ / ひずみ / 結晶成長 / 高キャリア移動度 / 欠陥 / LSI Less

Understanding carrier transport properties of ultra-thin semiconductor channel CMOS and establishing a method to enhance channel mobilityPrincipal Investigator
- Principal Investigator
  
  高木信一
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transferPrincipal Investigator
- Principal Investigator
  
  Takagi Shinichi
- Project Period (FY)
  2017 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
3次元集積Ge/III-V CMOSに向けた素子技術基盤の構築Principal Investigator
- Principal Investigator
  
  高木信一
- Project Period (FY)
  2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
スティープスロープＭＯＳトランジスタに最適なＭＯＳゲートスタック構造に関する研究Host Researcher
- Host Researcher
  
  高木信一
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineeringPrincipal Investigator
- Principal Investigator
  
  Takagi Shinichi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
高移動度チャネルＭＯＳＦＥＴのキャリア輸送と素子構造に関する理論的研究Host Researcher
- Host Researcher
  
  高木信一
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologiesPrincipal Investigator
- Principal Investigator
  
  TAKAGI Shinichi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
Understanding of mechanisms dominating inversion-layer mobility in strained-Si MOSFETs and establishment of guideline for the mobility enhancementPrincipal Investigator
- Principal Investigator
  
  TAKAGI Shinichi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Nano-structure functional devices based Ge-based channelsPrincipal Investigator
- Principal Investigator
  
  TAKAGI Shinichi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Technology Evolution for Silicon Nano-Electronics
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Study on physical models for understanding the properties of strained-Si MOS TransistorsPrincipal Investigator
- Principal Investigator
  
  TAKAGI Shinichi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo

[Book] Photonics and Electronics with Germanium, chapter 6 "Ge Condensation and Its Device Application"2015
- Author(s)
  S. Takagi
- Publisher
  Wiley-VCH
- Data Source
  KAKENHI-PROJECT-26249038
[Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-2013
- Author(s)
  財満鎭明、中塚理、高木信一(全執筆者57名)
- Total Pages
  510
- Publisher
  株式会社エヌ・ティー・エヌ
- Data Source
  KAKENHI-PROJECT-22000011
[Book] 2. III-V/Ge デバイス構造”, 先端LSI技術大系（GNC Tech. Vol. 2）、第3章　将来技術2012
- Author(s)
  高木信一
- Total Pages
  9
- Publisher
  グローバルネット株式会社
- Data Source
  KAKENHI-PROJECT-23246058
[Book] 2. III-V/Ge デバイス構造, 先端LSI 技術大系(GNC Tech. Vol.2)、第3章将来技術2012
- Author(s)
  高木信一
- Publisher
  グローバルネット株式会社
- Data Source
  KAKENHI-PROJECT-23246058
[Book] Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics (chapter 19)2011
- Author(s)
  Shinichi Takagi
- Total Pages
  29
- Publisher
  Woodhead Publishing Limited
- Data Source
  KAKENHI-PROJECT-23246058
[Book] Electronic Device Architectures for the Nano-CMOS Era - From Ultimate CMOS Scaling to Beyond CMOS Devices, Chapter 52008
- Author(s)
  S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane and S. Sugahara
- Publisher
  Pan Stanford Publishing
- Data Source
  KAKENHI-PROJECT-18063005
[Book] Electronic Device Architectures for the Nano-CMOS Era-From Ultimate CMOS Scaling to Beyond CMOS Devices", chapter 52008
- Author(s)
  S.Takagi, T.Tezuka, T.Irisawa, S.Nakaharai, T.Numata, K.Usuda, N.Sugiyama, M.Shichijo, R.Nakane and S.Sugahara
- Total Pages
  440
- Publisher
  Pan Stanford Publishing
- Data Source
  KAKENHI-PROJECT-20246055
[Book] Electronic Device Architectures for the Nano-CMOS Era-From Ultimate CMOS Scaling to Beyond CMOS Devices, Chapter 52008
- Author(s)
  S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane and S. Sugahara
- Total Pages
  23
- Publisher
  Pan Stanford Publishing
- Data Source
  KAKENHI-PROJECT-18063005
[Book] Devices Structures and Carrier Transport Properties of Advanced CMOS using High Mobility Channels, Electronic Device Architectures for the Nano-CMOS Era-From Ultimate CMOS Scaling to Beyond CMOS Devices, chapter 32008
- Author(s)
  S.Takagi, T.Tezuka, T.Irisawa, S.Nakaharai, T.Numata, K.Usuda, N.Sugiyama, M.Shichijo, R.Nakane, S.Sugahara
- Publisher
  Pan Stanford Publishing
- Data Source
  KAKENHI-PROJECT-20246055
[Book] Electronic Devices Architectures for the NANO-CMOS Era-From Ultimate CMOS Scaling to Beyond CMOS devices2008
- Author(s)
  S.Takagi, T.Tezuka, T.Irisawa, S.Nakaharai, T.Numata, K.Usuda, N.Sugiyama, M.Shichijo, R.Nakaneand S.Sugahara
- Publisher
  will be published in)Pan Stanford Publishing
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Book] Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics 27)(Chapter 1:Strained-Si CMOS Technology)2007
- Author(s)
  S.Takagi
- Publisher
  Springer
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Book] Silicon-germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies, Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics, chapter 19
- Author(s)
  S.Takagi
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely-Thin Body (100) GOI pMOSFETs2022
- Author(s)
  C.-T. Chen, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 69 Pages: 25-30
- DOI
  10.1109/ted.2021.3130221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation and annealing at high temperature2022
- Author(s)
  X. Han, C.-T. Chen, C.-M. Lim, K. Toprasertpong, M. Takenaka, and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61
- DOI
  10.35848/1347-4065/ac4075
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley-Robust to Surface Roughness Scattering2022
- Author(s)
  K. Sumita, C.-T. Chen, K. Toprasertpong, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 69 Pages: 2115-2121
- DOI
  10.1109/ted.2022.3143484
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-21J10272
[Journal Article] Impacts of Equivalent Oxide Thickness Scaling of TiN/Y2O3 Gate Stacks With Trimethylaluminum Treatment on SiGe MOS Interface Properties2021
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 42 Pages: 966-969
- DOI
  10.1109/led.2021.3081513
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-20J10380
[Journal Article] Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction2021
- Author(s)
  K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 68 Pages: 2003-2009
- DOI
  10.1109/ted.2021.3049455
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-21J10272
[Journal Article] Electrical properties of ultra-thin body (111) Ge on-insulator n-channel MOSFETs fabricated by smart-cut process2021
- Author(s)
  C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE J. Electron Device Society
  
  Volume: 9 Pages: 612-617
- DOI
  10.1109/jeds.2021.3085981
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method2021
- Author(s)
  K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 119 Pages: 103501-103501
- DOI
  10.1063/5.0057182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-21J10272
[Journal Article] Re - examination of effects of ALD high - k materials on defects reduction in SiGe metal - oxide - semiconductor interfaces2021
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Journal Title
  
  AIP Advances
  
  Volume: 11 Pages: 08502116-08502116
- DOI
  10.1063/5.0061573
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-20J10380
[Journal Article] Reduction of MOS interface defects in TiN/Y2O3/Si0.78Ge0.22 structures by trimethylaluminum treatment2020
- Author(s)
  Lee Tsung-En、Ke Mengnan、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 67 Pages: 4067-4072
- DOI
  10.1109/ted.2020.3014563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-20J10380
[Journal Article] Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors2020
- Author(s)
  K. Toprasertpong, K. Tahara, M. Takenaka, and S. Takagi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Pages: 242903-242903
- DOI
  10.1063/5.0008060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-19K15021
[Journal Article] Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process2020
- Author(s)
  Lim C.-M.、Zhao Z.、Sumita K.、Toprasertpong K.、Takenaka M.、Takagi S.
- Journal Title
  
  AIP Advances
  
  Volume: 10 Pages: 015045-015045
- DOI
  10.1063/1.5132881
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Metal-oxide-semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature postmetallization annealing2020
- Author(s)
  Lee Tsung-En、Ke Mengnan、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 127 Pages: 185705-185705
- DOI
  10.1063/1.5144198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-20J10380
[Journal Article] Operation of (111) Ge-on-insulator n-channel MOSFET fabricated by smart-cut technology2020
- Author(s)
  Lim Cheol-Min、Zhao Ziqiang、Sumita Kei、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  IEEE Electron Device Lett.
  
  Volume: 41 Pages: 985-988
- DOI
  10.1109/led.2020.2999777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing2020
- Author(s)
  K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 41 Pages: 1588-1591
- DOI
  10.1109/led.2020.3019265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-19K15021
[Journal Article] Accurate evaluation of specific contact resistivity between InAs/Ni-InAs alloy by using a multi-sidewall transmission line method2020
- Author(s)
  Sumita Kei、Kato Kimihiko、Takeyasu Jun、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59
- DOI
  10.35848/1347-4065/ab6cb3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Characteristics of InAs-On-Insulator thin films on Si fabricated by Smart Cut and thermal annealing effect2020
- Author(s)
  Sumita K.、Takeyasu J.、Toprasertpong K.、Takenaka M.、Takagi S.
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 128 Pages: 015705-015705
- DOI
  10.1063/5.0007978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process2019
- Author(s)
  Ke Mengnan、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 66 Pages: 5060-5064
- DOI
  10.1109/ted.2019.2948074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding2019
- Author(s)
  M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 125 Pages: 114501-114501
- DOI
  10.1063/1.5049518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties2019
- Author(s)
  Yoon S.-H.、Kato K.、Yokoyama C.、Ahn D.-H.、Takenaka M.、Takagi S.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Pages: 184501-184501
- DOI
  10.1063/1.5111630
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature2019
- Author(s)
 Sumita Kei、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 58 Issue: SB Pages: SBBA03-SBBA03
- DOI
 10.7567/1347-4065/aafa68
- NAID
 210000135316
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-17H06148
[Journal Article] Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process2019
- Author(s)
  Ke Mengnan、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 1 Pages: 311-317
- DOI
  10.1021/acsaelm.8b00071
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18J13656, KAKENHI-PROJECT-17H06148
[Journal Article] Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method2019
- Author(s)
  K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 114 Pages: 062101-062101
- DOI
  10.1063/1.5068713
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-18J14311
[Journal Article] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019
- Author(s)
  Lee T.-E.、Kato K.、Ke M.、Toprasertpong K.、Takenaka M.、Takagi S.
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 214 Pages: 87-92
- DOI
  10.1016/j.mee.2019.05.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis2019
- Author(s)
 Endo Kiyoshi、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 58 Issue: SB Pages: SBBA05-SBBA05
- DOI
 10.7567/1347-4065/aafecf
- NAID
 210000135409
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-17H06148
[Journal Article] Pre-treatment Effects on high-k/InxGa1-xAs MOS Interface Properties and their Physical Model2018
- Author(s)
  C. Yokoyama, C.-Y. Change, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 487-493
- DOI
  10.1109/jeds.2017.2760344
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Impact of atomic layer deposition high k films on slow trap density in Ge MOS interfaces with GeOx interfacial layers formed by plasma pre-oxidation2018
- Author(s)
  M. Ke, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 950-955
- DOI
  10.1109/jeds.2018.2822758
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018
- Author(s)
  S. Takagi, D.-h. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 85 Pages: 27-37
- DOI
  10.1149/08508.0027ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Investigation in electrical characteristics of vertical junction n-type Tunnel FET2018
- Author(s)
  P.-C. Huang, T. Tanamoto, M. Goto, S. Kawanaka, H. Hieda, M. Koyama, M. Takenaka, and S. Takagi, “
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 65 Pages: 5511-5517
- DOI
  10.1109/ted.2018.2874534
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16F16070
[Journal Article] (Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies2018
- Author(s)
  S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Pages: 75-86
- DOI
  10.1149/08607.0075ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-18J14311
[Journal Article] Relationship between interface state generation and substrate hole current in InGaAs　metal-oxide-semiconductor (MOS) interfaces2018
- Author(s)
  S.-H. Yoon, D.-H. Ahn, M. Takenaka and S. Takagi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 123 Pages: 234502-234502
- DOI
  10.1063/1.5031052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] (Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks2018
- Author(s)
  S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 80 (1) Pages: 109-118
- DOI
  10.1149/08001.0109ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-17J08214
[Journal Article] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi,　Y. Kurashima, N. Uchida, and T. Maeda
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Pages: 25-34
- DOI
  10.1149/08610.0025ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Interface state generation of Al2O3/InGaAs MOS structures by electrical stress2017
- Author(s)
  S. -H. Yoon, C.-Y. Chang, D. H. Ahn, M. Takenaka and S. Takagi
- Journal Title
  
  Microelectronic Eng.
  
  Volume: 178 Pages: 313-317
- DOI
  10.1016/j.mee.2017.05.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017
- Author(s)
  W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 64 Pages: 4615-4621
- DOI
  10.1109/ted.2017.2756061
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs2017
- Author(s)
  C.-Y. Chang, C. Yokoyama, M. Takenaka, Member and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 64 Pages: 2519-2525
- DOI
  10.1109/ted.2017.2696741
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017
- Author(s)
  M. Ke, M. Takenaka and S. Takagi
- Journal Title
  
  Microelectronic Eng.
  
  Volume: 178 Pages: 132-136
- DOI
  10.1016/j.mee.2017.04.021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics2017
- Author(s)
  C.-Y. Chang, K. Endo, K. Kato, M. Takenaka and S. Takagi
- Journal Title
  
  AIP Advances
  
  Volume: 7 Pages: 095215-095215
- DOI
  10.1063/1.4999958
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Evaluation of mobility degradation factors and performance improvement of ultrathin-body Germanium-on-insulator (GOI) MOSFETs by GOI thinning using plasma oxidation2016
- Author(s)
  X. Yu, J. Kang, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices,
  
  Volume: 64 Pages: 1418-1425
- DOI
  10.1109/ted.2017.2662217
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation2016
- Author(s)
  M. Ke, X. Yu, C. Chang, M. Takenaka and S. Takagi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Pages: 032101-032101
- DOI
  10.1063/1.4958890
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut GeOI substrates2016
- Author(s)
  X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 115 Pages: 120-125
- DOI
  10.1016/j.sse.2015.08.021
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016
- Author(s)
  S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
- Journal Title
  
  Solid State Electron.
  
  Volume: 125 Pages: 82-102
- DOI
  10.1016/j.sse.2016.07.002
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks2016
- Author(s)
  R. Zhang, X. Yu, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 63 Pages: 558-564
- DOI
  10.1109/ted.2015.2509961
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation2016
- Author(s)
  R. Zhang, P. C. Huang, N. Taoka, M. Yokoyama, M. Takenaka and S. Takagi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 108 Pages: 052903-052903
- DOI
  10.1063/1.4941538
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] III-V/Ge MOS Device Technologies for Low Power Integrated Systems2016
- Author(s)
  S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke and M. Takenaka
- Journal Title
  
  Solid-State Electronics
  
  Volume: 108
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance2015
- Author(s)
  K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54
- NAID
  210000144949
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Tunneling FET Technologies Using III-V and Ge Materials2015
- Author(s)
  S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 69 (10) Pages: 99-108
- DOI
  10.1149/06910.0099ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation2015
- Author(s)
  W.-K. Kim, M. Takenaka and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 4S Pages: 04DA05-04DA05
- DOI
  10.7567/jjap.54.04da05
- NAID
  210000144952
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] III–V/Ge channel MOS device technologies in nano CMOS era2015
- Author(s)
  S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi and M. Takenaka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 6S1 Pages: 06FA01-06FA01
- DOI
  10.7567/jjap.54.06fa01
- NAID
  210000145217
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015
- Author(s)
  S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 69(5) Pages: 37-51
- DOI
  10.1149/06905.0037ecst
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Ultrathin body Germanium-on-insulator (GeOI) Pseudo-MOSFETs fabricated　by transfer of epitaxial Ge films on III-V substrates2015
- Author(s)
  X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4
- DOI
  10.1149/2.0031502ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015
- Author(s)
  X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 147 Pages: 196-200
- DOI
  10.1016/j.mee.2015.04.063
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015
- Author(s)
  M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 147 Pages: 244-248
- DOI
  10.1016/j.mee.2015.04.079
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs2015
- Author(s)
  J.-K. Suh, N. Taoka, M. Takenaka and S. Takagi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 117 Pages: 77-87
- DOI
  10.1016/j.sse.2015.11.014
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015
- Author(s)
  M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 147
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation2014
- Author(s)
  R. Zhang, X. Yu, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 61 Pages: 3668-3675
- DOI
  10.1109/ted.2014.2359678
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Material Challenges and Opportunities in Ge/III-V channel MOSFETs2014
- Author(s)
  S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
- Journal Title
  
  ECS Transaction
  
  Volume: 64 Pages: 99-110
- DOI
  10.1149/06411.0099ecst
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Sb-Doped S/D Ultrathin body Ge-On-insulator nMOSFET fabricated by improved Ge condensation process2014
- Author(s)
  W.-K. Kim, K. Kuroda, T. Osada, M. Hata, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 61 Pages: 3379-3385
- DOI
  10.1109/ted.2014.2350457
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_x/Ge pMOSFETs and nMOSFETs2014
- Author(s)
  R. Zhang, J-C. Lin, X. Yu, M. Takenaka, S. Takagi
- Journal Title
  
  IEEE Trans, Electron Devices
  
  Volume: 61 Pages: 416-422
- DOI
  10.1109/ted.2013.2295822
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09309, KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
[Journal Article] Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs with GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2014
- Author(s)
  R. Zhang, X. Yu, M. Takenaka and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 61 Pages: 2316-2323
- DOI
  10.1109/ted.2014.2325604
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] Strain-modulated L-valley ballistic-transport in (111) GaAs ultrathin-body nMOSFETs2014
- Author(s)
  K. Alain, S. Takagi, and M. Takenaka
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: Vol.61 Pages: 1335-1340
- DOI
  10.1109/ted.2014.2311840
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-12F02063
[Journal Article] New Materials for Post-Si Computing: Ge and GeSn Devices2014
- Author(s)
  S. Gupta, X. Gong, R. Zhang, Y.-C. Yeo, S. Takagi and K. C. Saraswat
- Journal Title
  
  MRS Bulletin
  
  Volume: 39 Pages: 678-686
- DOI
  10.1557/mrs.2014.163
- Open Access
- Data Source
  KAKENHI-PROJECT-26249038
[Journal Article] A Ge ultrathin-body n-channel tunnel FET: effects of surface orientation2014
- Author(s)
  Khairul Alam, Shinichi Takagi and Mitsuru Takenaka
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 61 Pages: 3594-3600
- DOI
  10.1109/ted.2014.2353513
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-12F02063
[Journal Article] III-V/Ge MOS Transistor Technologies for Future ULSI (invited)2013
- Author(s)
  S. Takagi and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 54 (1) Pages: 39-54
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Performance Enhancement Technologies in III-V/Ge MOSFETs (invited)2013
- Author(s)
  S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 58(9) Pages: 137-148
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (invited)2013
- Author(s)
  S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 53 (3) Pages: 85-96
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] High Mobility Ge p- and n-MOSFETs with 0.7 nm EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation2013
- Author(s)
  R. Zhang, P.-C. Huang, J.-C. Lin, N. Taoka, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 60 Pages: 927-934
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013
- Author(s)
  S.Takagi, R.Zhang, and M.Takenaka
- Journal Title
  
  Micoroelectron. Eng.
  
  Volume: 109 Pages: 389-395
- DOI
  10.1016/j.mee.2013.04.034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] III-V/Ge CMOS device technologies for high performance logic applications2013
- Author(s)
  S.Takagi, M.Yokoyama, S.-H.Kim, R.Suzuki, R.Zhang, N.Taoka and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 53(3) Pages: 85-96
- DOI
  10.1149/05303.0085ecst
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices2013
- Author(s)
  S. Takagi and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: VOL. 54 Pages: 39-54
- DOI
  10.1149/05401.0039ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-22686034, KAKENHI-PROJECT-23246058
[Journal Article] High Mobility Ge pMOSFET with 1 nm Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation2013
- Author(s)
  R.Zhang, P.-C.Huang, J.-C.Lin, N.Taoka, M.Takenaka and S.Takagi
- Journal Title
  
  IEEE Trans.Electron Devices
  
  Volume: vol.60, no.3 Pages: 335-341
- DOI
  10.1109/ted.2011.2176495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013
- Author(s)
  S.Takagi, M.S.-H.Kim, R.Zhang, N.Taoka, Yokoyama and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 53(3) Pages: 97-105
- DOI
  10.1149/05303.0003ecst
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2013
- Author(s)
  S. Takagi, S. -H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka
- Journal Title
  
  Solid State Electronics
  
  Volume: 88 Pages: 2-8
- DOI
  10.1016/j.sse.2013.04.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J07612, KAKENHI-PROJECT-23246058
[Journal Article] Impact of plasma post oxidation temperature on interface trap density and roughness at GeO_X/Ge interfaces2013
- Author(s)
  R. Zhang, J. C. Lin, X. Yu, M. Takenaka, S. Takagi
- Journal Title
  
  Micoroelectron. Eng.
  
  Volume: 109 Pages: 97-100
- DOI
  10.1016/j.mee.2013.03.034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J09309, KAKENHI-PROJECT-23246058
[Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013
- Author(s)
  S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
- Journal Title
  
  ECS Transactions
  
  Volume: 53 (3) Pages: 97-105
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Atomic Layer-by-Layer Oxidation of Ge (100) and (111) Surfaces by Plasma Post Oxidation of Al2O3/Ge Structures2013
- Author(s)
  R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102 Pages: 81603-81603
- DOI
  10.1063/1.4794013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
[Journal Article] Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies2013
- Author(s)
  S. Takagi, Rui Zhang, S. -H. Kim, M. Yokoyama, and M. Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: VOL. 59 Pages: 137-148
- DOI
  10.1149/05809.0137ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-22686034, KAKENHI-PROJECT-23246058
[Journal Article] Analysis and comparison of L valley transport in GaAs, GaSb, and Geultra-thin-body nMOSFETs2013
- Author(s)
  K. Alam, S. Takagi, and M. Takenaka
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: Vol.60 Pages: 4213-4218
- DOI
  10.1109/ted.2013.2285394
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12F02063
[Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012
- Author(s)
  S.Takagi, R.Zhang, R.Suzuki N.Taoka, M.Yokoyama and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 50(4) Pages: 107-122
- DOI
  10.1149/05004.0107ecst
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] High-mobility Ge pMOSFET with 1-nm EOT Al2O3/GeOx/Ge gate stack fabricated by plasma post oxidation2012
- Author(s)
  R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 59 Pages: 335-341
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012
- Author(s)
  S. Takagi
- Journal Title
  
  ECS Transaction
  
  Volume: 50 (4) Pages: 107-122
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012
- Author(s)
  R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
- Journal Title
  
  ECS Trans.
  
  Volume: 50(9) Pages: 699-706
- DOI
  10.1149/05009.0699ecst
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS Interface Properties2011
- Author(s)
  R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
- Journal Title
  
  Microelectron.Eng.
  
  Volume: 88 Pages: 1533-1536
- DOI
  10.1016/j.mee.2011.03.130
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
[Journal Article] Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO22011
- Author(s)
  R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
- Journal Title
  
  J. Electrochem. Soc.
  
  Volume: 158
- DOI
  10.1149/1.3599065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
[Journal Article] Suppression of Interface State Generation in Si MOSFETs with Biaxially-Tensile Strain2011
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Journal Title
  
  in Electron Device Letters 32(accepted)
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Prospective and critical issues of III-V/Ge CMOS on Si platform2011
- Author(s)
  S.Takagi and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 35(3) Pages: 279-298
- DOI
  10.1149/1.3569921
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] High Mobility Ge-based CMOS Device Technologies2011
- Author(s)
  S.Takagi, S.Dissanayake and M.Takenaka
- Journal Title
  
  Key Engineering Materials
  
  Volume: Vol.470 Pages: 1-7
- DOI
  10.4028/www.scientific.net/kem.470.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Device and integration technologies of III-V/Ge channel CMOS2011
- Author(s)
  S.Takagi, M.Yokoyama, Y.-H.Kim and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 41(7) Pages: 203-218
- DOI
  10.1149/1.3633300
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] Al_2O_3/GeO_x/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011
- Author(s)
  J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 99 Pages: 142108-142108
- DOI
  10.1063/1.3647631
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246058
[Journal Article] Al2O3/GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Post Oxidation2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: vol.98 Pages: 112902-112902
- DOI
  10.1063/1.3564902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] MOS interface control technologies for III-V/Ge channel MOSFETs2011
- Author(s)
  S.Takagi, R.Zhang, T.Hoshii and M.Takenaka
- Journal Title
  
  ECS Trans.
  
  Volume: 41(3) Pages: 3-20
- DOI
  10.1149/1.3633015
- Data Source
  KAKENHI-PROJECT-23246058
[Journal Article] A Novel Characterization Scheme of Si/SiO2 Interface Roughness for Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs2010
- Author(s)
  Y.Zhao, H.Matsumoto T.Sato, S.Koyama, M.Takenaka, S.Takagi
- Journal Title
  
  IEEE Trans.Electron Devices 57
  
  Pages: 2057-2066
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] High Performance Ultrathin(110)-Oriented Ge-On-Insulator pMOSFETs Fabricated by Ge Condensation Technique2010
- Author(s)
  S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
- Journal Title
  
  Applied Physics Express 3
  
  Pages: 41302-41302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal-Oxide-Semiconductor Field-Fffect Transistors2010
- Author(s)
  O.Weber, M.Takenaka, S.Takagi
- Journal Title
  
  Jpn.J.Appl.Rhys.
  
  Volume: 49 Pages: 74101-74101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal Oxide Semiconductor Field-Effect Transistors2010
- Author(s)
  O.Weber, M.Takenaka, S.Takagi
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 74101-74101
- NAID
  40017216105
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Ge/III-V Channel Engineering for future CMOS2009
- Author(s)
  S.Takagi, M.Sugiyama, T.Yasuda, M.Takenaka
- Journal Title
  
  ECS Transactions 19
  
  Pages: 9-20
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2009
- Author(s)
  K.Morii, S.Dissanayake, S.Tanabe, R.Nakane, M.Takenaka, S.Sugahara, S.Takagi
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  210000066561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Interfacial Control and Electrical Properties of Ge MOS structures2009
- Author(s)
  S. Takagi, N. Taoka, M. Takenaka
- Journal Title
  
  ECS Trans. vol.19,no.2
  
  Pages: 67-85
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Ge/III-V Channel Engineering for future CMOS2009
- Author(s)
  S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
- Journal Title
  
  ECS Trans. vol.19,no.5
  
  Pages: 9-20
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] On Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Biaxially-tensile Strained Si MOSFETs2009
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Journal Title
  
  IEEE Electron Device Letters 30
  
  Pages: 987-989
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] ポストスケーリング時代のCMOSデバイス技術2009
- Author(s)
  高木信一
- Journal Title
  
  電子情報通信学会誌 vol. 92, No. 1
  
  Pages: 43-48
- NAID
  110007008504
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] 界面制御層を用いた高性能Ge MOSトランジスタ2009
- Author(s)
  高木信一, 山本豊二, 田岡紀之, 池田圭司
- Journal Title
  
  応用物理 vol.78,no.1
  
  Pages: 37-42
- NAID
  10023996500
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] 界面制御層を用いた高性能GeMOSトランジスタ2009
- Author(s)
  高木信一, 由本豊二, 由岡紀之, 池田圭司
- Journal Title
  
  応用物理 78
  
  Pages: 37-42
- NAID
  10023996500
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide-semiconductor Structures Fabricated by Thermal Oxidation2009
- Author(s)
  T.Sasada, Y.Nakakita, M.Takenaka, S.Takagi
- Journal Title
  
  Journal of Applied Physics 106
  
  Pages: 73716-73716
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] ポストスケーリング時代のCMOSデバイス技術2009
- Author(s)
  高木信一
- Journal Title
  
  電子情報通信学会誌 92
  
  Pages: 43-48
- NAID
  110007008504
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] On Surface Roughness Scatteringlimited Mobilities of Electrons and Holes in Biaxially-tensile Strained Si MOSFETs2009
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Journal Title
  
  IEEE Electron Device Letters 30
  
  Pages: 987-989
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide- Semiconductor Field-Effect Transistors2009
- Author(s)
  K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara, S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys. vol.48,no.4
- NAID
  210000066561
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide-semiconductor Structures Fabricated by Thermal Oxidation2009
- Author(s)
  T. Sasada, Y. Nakakita, M. Takenaka, S. Takagi
- Journal Title
  
  J. Appl. Phys. vol.106
  
  Pages: 73716-73716
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] 界面制御層を用いた高性能Ge MOSトランジスタ2009
- Author(s)
  高木信一, 山本豊二, 田岡紀之, 池田圭司
- Journal Title
  
  応用物理 vol. 78, no. 1
  
  Pages: 37-42
- NAID
  10023996500
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Interfacial Control and Electrical Properties of Ge MOS structures2009
- Author(s)
  S.Takagi, N.Taoka, M.Takenaka
- Journal Title
  
  ECS Transactions 19
  
  Pages: 67-85
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially-Strained Si MOSFETs2009
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Journal Title
  
  IEEE Trans.Electron Devices 56
  
  Pages: 1152-1156
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
- Journal Title
  
  IEEE Trans. Electron Devices Vol.55, Issue. 1
  
  Pages: 21-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008
- Author(s)
  S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
- Journal Title
  
  Thin Solid Films Vol.517,Issue1
  
  Pages: 178-180
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si N-MOSFETs2008
- Author(s)
  O.Weber and S.Takagi
- Journal Title
  
  IEEE Transaction on Electron Devlces 55
  
  Pages: 2386-2396
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
- Journal Title
  
  IEEE Trans. Electron Devices(Invited Paper) Vol. 55, No. 1
  
  Pages: 21-39
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008
- Author(s)
  S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
- Journal Title
  
  Thin Solid Films Vol. 517, Issue 1
  
  Pages: 178-180
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008
- Author(s)
  S.Takagi, T.Irisawa, T.Tezuka, T.Numata, S.Nakaharai, N.Hirashita, Y.Moriyama, K.Usuda, E.Toyoda, S.Dissanayake, M.Shichijo, R.Nakane, S.Sugahara, M.Takenaka and N.Suiama
- Journal Title
  
  IEEE Transactionon Eectron Devices Vol.55,Issue.1
  
  Pages: 21-39
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, et. al.
- Journal Title
  
  IEEE Trans. Electron Devices 55
  
  Pages: 21-39
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063013
[Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide-Semiconductor structures fabricated by thermal oxidation2008
- Author(s)
  H. Matsubara, T. Sasada, M. Takenaka and S. Takagi
- Journal Title
  
  Appl. Phys. Lett. Vol. 93, Issue. 3
  
  Pages: 32104-32104
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance (lnvited Paper)2008
- Author(s)
  S. Takagi, T. lrisawa, T. Tezuka, T.Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
- Journal Title
  
  IEEE Transaction on Electron Devices 55
  
  Pages: 21-39
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, N. Sugiyama
- Journal Title
  
  IEEE Trans. Electron Devices Vol.55,No.1
  
  Pages: 21-39
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide- Semiconductor structures fabricated by thermal oxidation2008
- Author(s)
  H. Matsubara, T. Sasada, M. Takenaka, S. Takagi
- Journal Title
  
  Appl. Phys. Lett. Vol.93,Issue.3
  
  Pages: 32104-32104
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] (110)Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008
- Author(s)
  S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 178-180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si NMOSFETs2008
- Author(s)
  O.Weber, S.Takagi
- Journal Title
  
  IEEE Transaction on Electron Devices 55
  
  Pages: 2386-2396
- Data Source
  KAKENHI-PROJECT-20246055
[Journal Article] Ultrathin Ge-On-lnsulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007
- Author(s)
  T. Uehara, H. Matsubara, S. Sugahara and S. Takagi
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 2117-2121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Mobility- Enhanced Device Technologies Using SiGe/Ge MOS Channels2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara, N. Sugiyama
- Journal Title
  
  ECS Trans. Vol.11,No.6
  
  Pages: 61-74
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007
- Author(s)
  T. Uehara, H. Matsubara, S. Sugahara and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys. vol. 46, no. 4B
  
  Pages: 2117-2121
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007
- Author(s)
  T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys. vol.46,no.4B
  
  Pages: 2117-2121
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Effect of Tensile Strain on Gate Current of strained-Si n-MOSFETs2007
- Author(s)
  T. Hoshii, S. Sugahara and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys Vol.46
  
  Pages: 2122-2126
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Mobility- Enhanced Device Technologies Using SiGe/Ge MOS Channels2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara and N. Sugiyama
- Journal Title
  
  ECS Trans. Vol. 11, No. 6
  
  Pages: 61-74
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Gate Dielectric Formation and MIS Interface Characterization on Ge2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
- Journal Title
  
  Microelectronic Engineering vol.84,Issue9-10
  
  Pages: 2314-2319
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara and N. Sugiyama
- Journal Title
  
  ECS Transaction 11
  
  Pages: 61-74
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Gate Dielectric Formation and MIS interface Characterization on Ge2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K lkeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
- Journal Title
  
  Microelectronic Engineering 84
  
  Pages: 2314-2319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Gate Dielectric Formation and MIS Interface Characterization on Ge2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
- Journal Title
  
  Microelectronic Engineering vol. 84, Issue 9-10
  
  Pages: 2314-2319
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Device structures and carrier transport properties of advanced CMOS using high mobility channels2007
- Author(s)
  S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, S. Sugahara
- Journal Title
  
  Solid-State Electronics Vol.51
  
  Pages: 526-536
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007
- Author(s)
  T.Uehara, H.Matsubara, S.Sugahara, S.Takagi
- Journal Title
  
  Jpn. J. Appl. Phys. Vol. 46, No. 4B(印刷中)
- Data Source
  KAKENHI-PROJECT-18063013
[Journal Article] Performance Enhancement of Partially and Fully Depleted Strained-SOIMOSFETs2006
- Author(s)
  T.Numata, T.Irisawa, T.Tezuka, J.Koga, N.Hirashita, K.Usuda, E.Toyoda, Y.Miyamura, A.Tanabe, N.Sugiyama, S.Takagi
- Journal Title
  
  IEEE Transaction on Eectron Devices vol.53, no.5
  
  Pages: 1030-1038
- NAID
  10014405092
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Device structures and carrier transport properties of advanced CMOS using high mobility channels2006
- Author(s)
  S.Takagi, T.Tezuka, T.Irisawa, S.Nakaharai, T.Numata, K.Usuda, N.Sugiyama, M.Shichijo, R.Nakane, S.Sugahara
- Journal Title
  
  Solid-State Electronics Vol.51
  
  Pages: 526-536
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Performance Enhancement of Partially and Fully Depleted Strained-S0I MOSFETs2006
- Author(s)
  T.Numata, T.Irisawa, T.Tezuka, J.Koga, N.Hirashita, K.Usuda, E.Toyoda, Y.Miyamura, A.Tanabe, N.Sugiyama and S.Takagi
- Journal Title
  
  IEEE Transaction on Eectron Devices Vol.52,Issue.8
  
  Pages: 1030-1038
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Hole Mobility Enhancement of p-MOSFETs Using Global and Local Ge Channel Technologies2006
- Author(s)
  S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Maeda, T. Numata, K. Ikeda and N. Sugiyama
- Journal Title
  
  Materials Science and Engineering: B Vol. 135, Issue. 3
  
  Pages: 250-255
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Hole Mobility Enhancement of p-MOSFETs Using Global and Local Ge Channel Technologies2006
- Author(s)
  S.Takagi, T.Tezuka, T.Irisawa, S Nakaharai, T.Maeda, T.Numata, K Ikeda, N.Sugiyama
- Journal Title
  
  Materials Science and Engineering : B Volume 135, Issue 3
  
  Pages: 250-255
- Data Source
  KAKENHI-PROJECT-18063005
[Journal Article] Performance Enhancement of Partially and Fully Depleted Strained-SOI MOSFETs2006
- Author(s)
  T. Numata, T. Irisawa, T. Tezuka, J. Koga, N. Hirashita, K. Usuda, E. Toyoda, Y. Miyamura, A. Tanabe, N. Sugiyama and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices Vol.53, Issue. 5
  
  Pages: 1030-1038
- NAID
  10014405092
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Control of Threshold Voltage and Short Channel Effects in Ultra-thin Strained-SOI CMOS Devices2005
- Author(s)
  T. Numata, T. Mizuno, T. Tezuka, J. Koga and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices Vol.52, Issue 8
  
  Pages: 1780-1786
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Analysis of Microstructures in SiGe Buffer Layers on sSilicon-on-Insulator Substrates2005
- Author(s)
  N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima, T.Tezuka, N.Sugiyama, S.Takagi
- Journal Title
  
  Japanese Journal of Applied Physics 44(10)
  
  Pages: 7356-7363
- Data Source
  KAKENHI-PROJECT-17636001
[Journal Article] Subband Structure Engineering for Advanced CMOS Channels2005
- Author(s)
  S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga and K. Uchida
- Journal Title
  
  Solid State Electron. Vol.49, Issue 5
  
  Pages: 684-694
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] On the Origin of Increase in Substrate Current and Impact lonization Efficiency in Strained Si n-and p-MOSFETs2005
- Author(s)
  T.Irisawa, T.Numata, N.Sugiyama and S.Takagi
- Journal Title
  
  IEEE Transaction on Eectron Devices Vol.52,Issue.5
  
  Pages: 993-998
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Si系高移動度MOSトランジスタ技術2005
- Author(s)
  高木信一
- Journal Title
  
  応用物理 74巻・9号
  
  Pages: 1158-1170
- NAID
  130007718043
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Subband Structure Engineering for Advanced CMOS Channels2005
- Author(s)
  S.Takagi, T.Mizuno, T.Tezuka, N.Sugiyama, S.Nakaharai, T.Numata, J.Kogaand.K.Uchida
- Journal Title
  
  Solid State Electronics Vol.49,Issue5
  
  Pages: 684-694
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Subband Structure Engineering for Advanced CMOS Channels2005
- Author(s)
  S.Takagi, T.Mizuno, T.Tezuka, N.Sugiyama, S.Nakaharai, T.Numata, J.Koga, K.Uchida
- Journal Title
  
  Solid State Electronics Vol.49, Issue 5
  
  Pages: 684-694
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] 0n the Origin of Increase in Substrate Current and Impact Ionization Efficiency in Strained Si n- and p-MOSFETs2005
- Author(s)
  T. Irisawa, T. Numata, N. Sugiyama and S. Takagi
- Journal Title
  
  IEEE Trans. Electron Devices Vol.52, Issue 5
  
  Pages: 993-998
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] On the Origin of Increase in Substrate Current and Impact Ionization Efficiency in Strained Si n- and p-MOSFETs2005
- Author(s)
  T.Irisawa, T.Numata, N.Sugiyama, S.Takagi
- Journal Title
  
  IEEE Transaction on Electron Devices Vol.52, Issue.5
  
  Pages: 993-998
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Si-based high mobility MOS transistor technologies2005
- Author(s)
  S. Takagi
- Journal Title
  
  Oyo Buturi Vol.74
  
  Pages: 1158-1170
- NAID
  130007718043
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Control of Threshold Voltage and Short Channel Effects in Ultra-thin Strained-SOl CMOS Devices2005
- Author(s)
  T.Numata, T.Mizuno, T.Tezuka, J.Koga and S.Takagi
- Journal Title
  
  IEEE Transaction on Eectron Devices Vol.52,Issue.8
  
  Pages: 1780-1786
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16206029
[Journal Article] Subband Structure Engineering for Advanced CMOS Channels2005
- Author(s)
  S.Takagi, T.Mizuno, T.Tezuka, N.Sugiyama, S.Nakaharai, T.Numata, J.Koga, K.Uchida
- Journal Title
  
  Solid State Electronics 49(5)
  
  Pages: 684-694
- Data Source
  KAKENHI-PROJECT-17636001
[Presentation] 先端ロジックCMOSのためのチャネル材料・デバイス技術2022
- Author(s)
  高木信一
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第27回研究会)
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 表面ラフネス散乱に対してロバストな極薄膜nMOSFETのチャネル材料と面方位の最適設計2022
- Author(s)
  隅田圭, Chia-Tsong Chen, トープラサートポンカシディット, 竹中充, 高木信一
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 表面ラフネス散乱の新モデルに基づく極薄膜nMOSFETの最適なチャネル材料と面方位の設計2022
- Author(s)
  隅田圭, Chia-Tsong Chen, トープラサートポンカシディット, 竹中充, 高木信一
- Organizer
  電子情報通信学会SDM研究会／応用物理学会シリコンテクノロジー分科会共催１月研究会（IEDM特集）
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 異種材料集積による最先端集積Siデバイス技術2022
- Author(s)
  高木信一
- Organizer
  千葉エリア産官学公金共創イノベーションネットワーク第1回産官学公金マッチングシンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 液浸ラマン分光法による極薄膜GOI pMOSFETの異方性二軸応力評価2022
- Author(s)
  横川凌, Chia-Tsong Chen, Kasidit Toprasertpong, 竹中充, 高木信一, 小椋厚志
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Characterization of slow traps in MOS interfaces of TiN/Y2O3/SiGe gate stacks2021
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] ラフネスを有するチャネルにおける2次元電子ガスの基底状態の新たな定式化と表面ラフネス散乱移動度への影響2021
- Author(s)
  隅田圭, トープラサートポン　カシディット, 竹中充, 高木信一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness Scattering2021
- Author(s)
  K. Sumita, C.-T. Chen, K. Toprasertpong, M. Takenaka, and S. Takagi
- Organizer
  IEEE International Electron Device Meeting (IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] InAs-On-Insulatorチャネルの極薄膜化と(111)面方位の組み合わせによるサブバンド制御を利用したnMOSFETの高性能化2021
- Author(s)
  隅田圭, トープラサートポン　カシディット, 竹中充, 高木信一
- Organizer
  電気学会電子デバイス研究会, 「高機能化合物半導体エレクトロニクス技術と将来システムへの応用」
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] InAs/Ni-InAs間のコンタクト抵抗率とその評価法に関する実験的検討2021
- Author(s)
  竹安淳, 隅田圭, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] (111) InAs-OI nMOSFETのチャネル薄膜化による移動度向上の実現と伝導帯内の界面準位の実験的評価2021
- Author(s)
  隅田圭, 吉津遼平, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-immersion Raman Spectroscopy2021
- Author(s)
  R. Yokogawa, C.-T. Chen, T. Kasidit, M. Takenaka, S. Takagi and A. Ogura
- Organizer
  53rd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] HfO2系FeFETにおける結晶化アニール温度とSi界面特性のトレードオフ2021
- Author(s)
  トープラサートポン・カシディット，田原建人，福井太一郎，林早ヨウ，渡辺耕坪，竹中充，高木信一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature2021
- Author(s)
  X. Han, C.-T. Chen, C.-M. Lim, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  53rd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced CMOS technologies for ultra-low power logic and AI applications2021
- Author(s)
  S. Takagi, K. Toprasertpong, K. Kato, K. Sumita, E. Nako, R. Nakane, K.-w. Jo and M. Takenaka
- Organizer
  IEEE Electron Devices Technology and Manufacturing (EDTM) Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment2021
- Author(s)
  T.-E. Lee, S.-T. Huang, C.-Y. Yang, K. Toprasertpong, M. Takenaka, Y.-J. Lee and S. Takagi
- Organizer
  53rd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Defect control of Y2O3-based SiGe MOS interfaces properties2021
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] (111)面チャネルの薄膜化によるInAs-OI nMOSFETのサブバンド制御手法の提案と極薄膜(111) InAs-OI基板の実現2021
- Author(s)
  隅田圭, 吉津遼平, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] [招待講演] チャネル薄膜化と(111)面方位の組み合わせによるInAs-On-Insulator nMOSFETのサブバンド制御2021
- Author(s)
  隅田圭, トープラサートポンカシディット, 竹中充, 高木信一
- Organizer
  電子情報通信学会SDM研究会／応用物理学会シリコンテクノロジー分科会共催１月研究会（IEDM特集）
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of asymmetric strain on performance of extremely-thin body (100) GOI and (110) SGOI pMOSFETs2021
- Author(s)
  C. T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
- Organizer
  Symp. on VLSI technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Performance improvement of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment2021
- Author(s)
  T.-E. Lee, S.-T. Huang, C.-Y. Yang, K. Toprasertpong, M. Takenaka, Y.-J. Lee, and S. Takagi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 液浸ラマン分光法で観測されるGOI極薄膜ラマンスペクトルのブロードピークと歪の関係に関する考察2021
- Author(s)
  横川凌, C.-T. Chen, K. Toprasertpong, 竹中充, 高木信一, 小椋厚志
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Hole mobility enhancement in extremely-thin body asymmetrically-strained (100) GOI pMOSFETs2021
- Author(s)
  C. -T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Introduction of high tensile strain into Ge-on-Insulator structures by oxidation/annealing at high temperature2021
- Author(s)
  X. Y. Han, C. T. Chen, C.-M Lim, K. Toprasertpong, M. Takenaka, and S. Takagi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Asymmetrically-strained (110) SGOI pMOSFETs for hole mobility enhancement in extremely-thin body channels2021
- Author(s)
  C. -T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Characterization of slow traps in SiGe MOS interfaces by TiN/Y2O3 gate stacks2021
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  IEEE International Reliability Physics Symposium (IRPS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] n-Ge MOS絶縁膜中の異なるキャリア捕獲トラップの峻別手法の提案2020
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Subband Engineering by Combination of Channel Tchikness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs2020
- Author(s)
  K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi
- Organizer
  IEEE International Electron Devices Meeting (IEDM 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] InAs-On-Insulator基板の高品質化と貼り合わせ界面特性の評価2020
- Author(s)
  隅田圭, 加藤公彦, 竹安淳, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm-22020
- Author(s)
  K. Toprasertpong, Z. -Y. Lin, T. -E. Lee, M. Takenaka, and S. Takagi
- Organizer
  Symposia on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Prospects and challenges of advanced CMOS logic devices2020
- Author(s)
  S. Takagi
- Organizer
  7th International conference on “Microelectronics, Circuits and Systems” (Micro2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Antiferroelectricity and cycling behavior of ALD ZrO2 ultra-thin films2020
- Author(s)
  X. Luo, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  52nd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] (001)GOI薄膜化によるnMOSFETの電子移動度向上機構に関する考察2020
- Author(s)
  高木信一, 曺光元, 林澈敏, トープラサートポン・カシディット, 竹中充
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Multi-Sidewall TLMを用いた精密なInAs/Ni-InAs間の接触抵抗率測定2020
- Author(s)
  隅田圭, 竹安淳, 加藤公彦, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] [招待講演] チャネル薄膜化と(111)面方位の組み合わせによるInAs-On-Insulator nMOSFETのサブバンド制御2020
- Author(s)
  隅田圭, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  電子情報通信学会SDM研究会／応用物理学会シリコンテクノロジー分科会共催１月研究会（IEDM特集）
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 強誘電体FETのMOS界面における電荷分布の評価とデバイス動作の理解2020
- Author(s)
  トープラサートポン・カシディット，竹中充，高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Revision of conductance method for evaluating interface state density at MFIS interfaces2020
- Author(s)
  T.-E. Lee, Z. Lin, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  51th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of ferroelectric properties of TiN/Hf0.5Zr0.5O2/Si gate stacks by the insertion of Al2O3 interfacial layers2020
- Author(s)
  Z.-Y. Lin, T.-E. Lee, H.-Z. Tang, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] n-Ge MOS構造における異なる界面層へのキャリアトラップ特性の比較2020
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] InAs-On-Insulatorチャネルの極薄膜化と(111)面方位の組み合わせによるサブバンド制御を利用したnMOSFETの高性能化2020
- Author(s)
  隅田圭, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用」
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 【招待講演】先端CMOSデバイスの研究動向2020
- Author(s)
  高木信一
- Organizer
  東レリサーチセンター半導体デバイス分析セミナー2020
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO2 films2020
- Author(s)
  Xuan Luo, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Si強誘電体FETにおける強誘電分極に誘起される反転層電荷の振る舞い2020
- Author(s)
  トープラサートポン・カシディット，林早ヨウ，李宗恩，竹中充，高木信一
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs2020
- Author(s)
  K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka and S. Takagi
- Organizer
  52nd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 酸化濃縮法により作製したGOIを用いた引張りひずみGOI nMOSFET2020
- Author(s)
  曺光元, 林澈敏, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] First demonstration of (111) Ge-on-insulator n-channel MOSFET fabricated by smart-cut technology2020
- Author(s)
  C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate2020
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 酸化濃縮法により作製した圧縮ひずみ(110)面SiGe-OI pMOSFET2020
- Author(s)
  曺光元、トープラサートポン・カシディット、竹中充、高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] プラズマ酸化により作製したAl2O3/GeOx/n-Ge MOS界面における遅い準位の特性2020
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] ［招待講演］Si強誘電体FETにおける分極・電荷のカップリングとメモリ特性への影響2020
- Author(s)
  トープラサートポン・カシディット, 林早ヨウ, 李宗恩, 竹中充, 高木信一
- Organizer
  電子情報通信学会ICD/SDM/ ITE-IST研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] (NH4)2S処理理前の前処理がAl2O3/InGaAs MOS界面に与える影響2019
- Author(s)
  尹尚希, 加藤公彦, 横山千晶, 安大煥, 竹中充, 高木信一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of Si0.78Ge0.22 MOS interface properties by using TiN/Y2O3 gate stacks with TMA passivation2019
- Author(s)
  T. Lee, M. Takenaka, and S. Takagi
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 性能限界を越えるCMOS デバイス技術2019
- Author(s)
  高木信一
- Organizer
  名古屋大学シリコンフロンティア・特別研究会, ～特定領域研究『ポストスケール』から10年を超えて～
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology2019
- Author(s)
  C.-M. Lim, M. Takenaka and S. Takagi
- Organizer
  3rd Electron Devices Technology and Manufacturing (EDTM) Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019
- Author(s)
  T.-E. Lee, K. Kato, M. Takenaka and S. Takagi
- Organizer
  21st Conference on Insulating Films on Semiconductors (INFOS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Performance enhancement of extremely-thin-body SiGe- or Ge-on-insulator pMOSFETs fabricated by Ge condensation2019
- Author(s)
  K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] MOS interface defect control in alternative channel materials2019
- Author(s)
  S. Takagi, M. Ke, D.-H Ahn, T.-E. Lee, S.-H. Yoon, K. Kato, K. Toprasertpong and M. Takenaka
- Organizer
  21st Conference on Insulating Films on Semiconductors (INFOS 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced MOSFETs and TFETs using Alternative Semiconductors for Ultralow Power Logic Applications2019
- Author(s)
  S. Takagi, K. Kato, K. Sumita, K.-W. Jo, R. Takaguchi, D.-H. Ahn, K. Toprasertpong, M. Takenaka
- Organizer
  MRS spring meeting, Symposium: EP09: Devices and Materials to Extend the CMOS Roadmap for Logic and Memory Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology2019
- Author(s)
  C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Re-examination of Sulfur treatment effects on Al2O3/InGaAs MOS interface properties2019
- Author(s)
  S.-H. Yoon, K. Kato, C. Yokoyama, M. Takenaka and S. Takagi
- Organizer
  21st Conference on Insulating Films on Semiconductors (INFOS 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Fabrication of high quality InAs-on-Insulator structures by Smart Cut process with reuse of InAs wafers2019
- Author(s)
  K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  IEEE International 3D Systems Integration Conference (3DIC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation2019
- Author(s)
  K.-W. Jo, C.-M. Lim, W.-K. Kim, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  IEEE International Electron Devices Meeting (IEDM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Contributions of electron and hole slow traps to hysteresis in C-V characteristics of Al2O3/GeOx/p-Ge MOS capacitors2019
- Author(s)
  M. Ke, M. Takenaka and S. Takagi
- Organizer
  50th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced MOS Device Technology for Low Power Logic LSI2019
- Author(s)
  S. Takagi, K. Kato, K. Sumita, K.-w. Jo, C.-M. Lim, R. Takaguchi, D.-H. Ahn, J. Takeyasu, K. Toprasertpong and M. Takenaka
- Organizer
  26th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] TiN/Hf0.5Zr0.5O2/Si MFSキャパシタの電気特性に与える基板タイプの影響2019
- Author(s)
  トープラサートポン・カシディット，田原建人，福井太一郎，竹中充，高木信一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration2019
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, Y. Kurashima, H. Takagi and N. Uchida
- Organizer
  Silicon Nanoelectronics Workshop (SNW)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA passivation2019
- Author(s)
  T.-E. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi,
- Organizer
  Symposia on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Importance of semiconductor MOS interface control on advanced electron devices2019
- Author(s)
  S. Takagi, T.-E. Lee, M. Ke, S.-H. Yoon, D.-H Ahn, K. Kato, K. Toprasertpong and M. Takenaka
- Organizer
  International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Spin on Glassからの固相拡散によるGe中のn型不純物拡散挙動2019
- Author(s)
  高口遼太郎，竹中充, 高木信一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Effects of Hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process2019
- Author(s)
  C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  51th International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Accurate evaluation of contact resistivity between InAs/Ni-InAs alloy2019
- Author(s)
  K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  51th International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of atomic layer deposition high-k materials on Si0.78Ge0.22 MOS interface properties with TiN gate2019
- Author(s)
  T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
- Organizer
  50th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation2019
- Author(s)
  K. Toprasertpong, M. Takenaka, and S. Takagi
- Organizer
  IEEE International Electron Devices Meeting (IEDM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method2019
- Author(s)
  K. Sumita, J. Takeyasu, K. Kato, M. Takenaka, and S. Takagi
- Organizer
  2019 Compound Semiconductor Week (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Smart Cut法により作製したInAs-On-Insulator基板への熱処理の影響2019
- Author(s)
  隅田圭, 竹安淳, 加藤公彦, トープラサートポン・カシディット, 竹中充, 高木信一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019
- Author(s)
  T. Lee, M. Takenaka, and S. Takagi
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Reduction in interface trap density of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature PMA2018
- Author(s)
  T.-E. Lee, M. Ke, K. Kato, M. Takenaka, and S. Takagi
- Organizer
  49th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Extremely-Thin Body GOI structures and MOSFETs2018
- Author(s)
  S. Takagi, W.-K. Kim, K. Jo, X. Yu and M. Takenaka
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018
- Author(s)
  S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
- Organizer
  AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi,　Y. Kurashima, N. Uchida, and T. Maeda
- Organizer
  AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces2018
- Author(s)
  M. Ke, P. Cheng, K. Kato, M. Takenaka, and S. Takagi
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Improvement of SiGe MOS Interfaces Properties by TiN/Y2O3 Gate Stacks2018
- Author(s)
  T. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of SiGe Layer Thickness in Starting Substrates on Properties of Ultrathin Body Ge-on-insulator pMOSFETs fabricated by Ge Condensation2018
- Author(s)
  Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka and Shinichi Takagi
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application2018
- Author(s)
  W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, Hi. Ota, H. Takagi, Y. Kurashima, N. Uchida, T. Maeda
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI2018
- Author(s)
  S. Takagi, K. Kato, W.-K. Kim, K.-w. Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow and M. Takenaka
- Organizer
  48th European Solid-State Device Research Conference (ESSDERC)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Fabrication of InAs-on-Insulator structures by Smart Cut method with room temperature hydrogen implantation2018
- Author(s)
  K. Sumita, K. Kato, M. Takenaka and S. Takagi
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Al2O3/p-InxGa1-xAs MOS界面に与える前処理の効果2018
- Author(s)
  横山千晶，張志宇，加藤公彦, 竹中充，高木信一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] ECRプラズマ酸化によるALD high-k/GeOx/Ge界面の遅い準位起源2018
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第23回研究会）
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018
- Author(s)
  S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
- Organizer
  234th Electrochemical Society (ECS) Meeting, Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Smart Cut法を用いたInAs on Insulator構造の作製2018
- Author(s)
  隅田圭, 竹中充,　高木信一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018
- Author(s)
  S. Takagi, D.-H. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
- Organizer
  233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Physical origins of slow traps for ALD high-k dielectrics on GeOx/Ge interfaces2018
- Author(s)
  M. Ke, K. Kato, M. Takenaka and S. Takagi
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018
- Author(s)
  S. Takagi, D.-h. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
- Organizer
  233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Correlation of interface state generation and InGaAs MOS interface properties2018
- Author(s)
  S.-H. Yoon, D.-H. Ahn, C. Yokoyama, M. Takenaka, and S. Takagi
- Organizer
  49th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018
- Author(s)
  K.-W. Jo, W.-K. Kim, M. Takenaka, and S. Takagi
- Organizer
  Symposia on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] InGaAs nチャネルMOSFETにおける界面準位発生と基板ホール電流の関係2018
- Author(s)
  尹尚希, 張志宇, 安大煥, 竹中充, 高木信一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] MOSトランジスタにおけるキャリアのフォノン散乱2018
- Author(s)
  高木信一
- Organizer
  応用物理学会第212回シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ge MOSFETへの期待と課題2018
- Author(s)
  高木信一, 曺光元, 金佑彊, 柯夢南, 加藤公彦, 竹中充
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Low power III-V MOSFETs and TFETs on Si platform2017
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  9th International Conference on Materials for Advanced Technologies
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-insulator pMOSFET fabricated by Ge Condensation2017
- Author(s)
  K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] III-V/Ge MOSFETs and TFETs for Ultra-Low Power Logic LSIs2017
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  2017 International Symposium on VLSI Technology, Systems and Applications (2017 VLSI-TSA)
- Place of Presentation
  Ambassador Hotel Hsinchu, Hsinchu, Taiwan
- Year and Date
  2017-04-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V-based low power CMOS devices on Si platform2017
- Author(s)
  S. Takagi, D. H. Ahn, T. Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama and M. Takenaka
- Organizer
  IEEE International Conference on Integrated Circuit Design & Technology (ICICDT)
- Place of Presentation
  Avaya Auditorium, Austin, USA
- Year and Date
  2017-05-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] 酸化濃縮プロセスにおける冷却方法がGeOI中の圧縮ひずみに及ぼす効果2017
- Author(s)
  金佑彊, 竹中充, 高木信一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Advanced MOS device technology for ultra-low power IoT applications2017
- Author(s)
  S. Takagi
- Organizer
  12th VDEC D2T Symposium
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced MOS device technology2017
- Author(s)
  S. Takagi
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida and T. Maeda
- Organizer
  Sympia on VLSI technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 電気ストレスによるAl2O3/InGaAs MOS界面における界面準位発生2017
- Author(s)
  尹尚希, 張志宇, 安大煥, 竹中充, 高木信一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Influence of ALD High-k film deposition on plasma oxidation GeOx/Ge gate stacks2017
- Author(s)
  M. Ke, M. Takenaka, and S. Takagi
- Organizer
  10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2017-02-13
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] プラズマ酸化により形成したAl2O3/GeOx/Ge MOS界面の遅い準位の起源2017
- Author(s)
  柯夢南, シャオ・ユウ, 張志宇, 竹中充, 高木信一
- Organizer
  第22回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―
- Place of Presentation
  東レ研修センター（静岡県三島市）
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017
- Author(s)
  S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
- Organizer
  232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
- Place of Presentation
  Gaylord National Resort and Convention Center, National Harbor, USA
- Year and Date
  2017-10-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017
- Author(s)
  M. Ke, M. Takenaka, and S. Takagi
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS 2017)
- Place of Presentation
  Seminaris SeeHotel Potsdam, Potsdam, Germany
- Year and Date
  2017-06-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Discrimination of pre-existing and generated slow traps under electrical stress in Al2O3/GeOx/n-Ge gate stacks with plasma oxidation process2017
- Author(s)
  M. Ke, M. Takenaka, and S. Takagi
- Organizer
  48th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] プラズマ酸化による酸化濃縮GOI層の薄膜化により作製した極薄ひずみGOI pMOSFETs2017
- Author(s)
  金佑彊, 竹中充, 高木信一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Interface state generation of Al2O3/InGaAs MOS structures by electrical stress2017
- Author(s)
  S.-H. Yoon, C.-Y. Chang, D. H. Ahn, M. Takenaka and S. Takagi
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultra-low Power MOSFETs and Tunneling FETs using III-V and Ge2017
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  International Workshop on Nanodevice Technologies 2017 (IWNT 2017)
- Place of Presentation
  広島大学（広島県東広島市）
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] High Performance 4.5-nm-Thick Compressively-Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation with Optimized Temperature Control2017
- Author(s)
  W.-K. Kim, M. Takenaka and S. Takagi
- Organizer
  Sympia on VLSI technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Pre-cleaning Effects for Al2O3/p-InxGa1-xAs MOS Interfaces2017
- Author(s)
  C. Yokoyama, C.-Y. Chang, M. Takenaka, and S. Takagi
- Organizer
  48th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers2017
- Author(s)
  M. Ke, M. Takenaka and S. Takagi
- Organizer
  47th European Solid-State Device Research Conference (ESSDERC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] High Performance 4.5-nm-Thick Compressively-Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation with Optimized Temperature Control2017
- Author(s)
  W.-K. Kim, M. Takenaka and S. Takagi
- Organizer
  Symposium on VLSI technology
- Place of Presentation
  京都リーガローヤルホテル（京都府京都市）
- Year and Date
  2017-06-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-insulator pMOSFET fabricated by Ge Condensation2017
- Author(s)
  K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017
- Author(s)
  M. Ke, M. Takenaka, and S. Takagi
- Organizer
  20th Conference on Insulating Films on Semiconductors (INFOS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultra-low power MOSFET and Tunneling FET technologies using III-V and Ge2017
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017
- Author(s)
  S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
- Organizer
  232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced Devices and Materials for Future CMOS-based IC Technologies2017
- Author(s)
  S. Takagi
- Organizer
  International Electron Devices and Materials Symposium (IEDMS) 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Relationship between interface state generation and substrate hole current in InGaAs n-channel MOSFETs2017
- Author(s)
  S.-H. Yoon, D.-H. Ahn, M. Takenaka, and S. Takagi
- Organizer
  48th IEEE Semiconductor Interface Specialists Conference (SISC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] ALD Al2O3/GeOx/Ge界面の電子と正孔に対する遅い準位の物理的起源に関する考察2017
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] プラズマ後酸化によるALD Al2O3/Y2O3/GeOx/Geゲートスタックの電気特性2017
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] 冷却レートを低減した酸化濃縮プロセスにより作製した高圧縮ひずみGOI pMOSFET2017
- Author(s)
  金佑彊, 竹中充, 高木信一
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 温度サイクルを減らした酸化濃縮法による高圧縮ひずみ極薄膜Ge-OI 構造の実現2016
- Author(s)
  金佑彊, 竹中充, 高木信一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] 極低電力LSIのための先端Ge MOSデバイス技術2016
- Author(s)
  高木信一, シャオ・ユウ, 張睿, 柯夢南, 竹中充
- Organizer
  第80回半導体・集積路技術シンポジウム
- Place of Presentation
  東京理科大学森戸記念館（東京都新宿区）
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process2016
- Author(s)
  M. Ke, X. Yu, M. Takenaka and S. Takagi
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration”
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Al2O3/GeOx/Ge MOS界面の遅い準位密度に与える界面構造の影響2016
- Author(s)
  柯夢南, ユウ・シャオ, 竹中充, 高木信一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] 極薄膜Ge-On-Insulator(GOI) p-MOSFETのキャリア輸送特性2016
- Author(s)
  ユウ・シャオ, 亢健, 竹中充,　高木信―
- Organizer
  電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術（IEDM特集）」
- Place of Presentation
  機械振興会館（東京都港区）
- Year and Date
  2016-01-28
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V/Ge MOS Device Technologies for Ultra-Low Power LSIs2016
- Author(s)
  S. Takagi
- Organizer
  KIST PSI International Symposium,
- Place of Presentation
  Korea Institute of Science and Technology (KIST), Seoul, Korea
- Year and Date
  2016-09-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Non-Si MOSFET and TFET for low-power circuits2016
- Author(s)
  S. Takagi
- Organizer
  2016 International Workshop for Ultra Low Power Nano-electronics for IoT
- Place of Presentation
  Hanyang University, Seoul, Korea
- Year and Date
  2016-10-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Carrier Transport Properties in Extremely-Thin Body GOI p-MOSFETs2016
- Author(s)
  S. Takagi, X. Yu, J. Kang and M. Takenaka
- Organizer
  Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Forschungszentrum Julich, Julich, Germany
- Year and Date
  2016-11-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] GeOxNy 層の挿入によるAl2O3/n-Ge MOS界面の遅い準位密度低減2016
- Author(s)
  柯夢南, シャオ・ユウ, 竹中充, 高木信一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015
- Author(s)
  M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka, and S. Takagi
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm2015
- Author(s)
  X. Yu, J. Kang, M. Takenaka and S. Takagi
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  Hilton Washington, Washington DC., USA
- Year and Date
  2015-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] MOS Interface Control Technologies for Advanced III-V/ Ge Devices2015
- Author(s)
  S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
- Organizer
  228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
- Place of Presentation
  Hyatt Regency Hotel, Pheonix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Low Power MOS Device Technologies based on Heterogeneous Integration2015
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  2015 International Electron Devices and Materials Symposia (IEDMS)
- Place of Presentation
  Kun Shan University, Tainan, Taiwan
- Year and Date
  2015-11-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Tunneling FET Technologies Using III-V and Ge Materials2015
- Author(s)
  S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M. Takenaka
- Organizer
  228th Fall meeting of the Electrochemical Society, G04 - ULSI Process Integration 9
- Place of Presentation
  Hyatt Regency Hotel, Pheonix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation2015
- Author(s)
  M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
- Organizer
  19th Conference on "Insulating Films on Semiconductors" (INFOS)
- Place of Presentation
  University of Udine, Udine, Italy
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015
- Author(s)
  X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
- Organizer
  19th Conference on "Insulating Films on Semiconductors" (INFOS)
- Place of Presentation
  University of Udine, Udine, Italy
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Nano Device Technologies for Ultra Low Power LSIs2015
- Author(s)
  S. Takagi
- Organizer
  International Nanotechnology Conference on Communication and Cooperation (INC11)
- Place of Presentation
  ヒルトン福岡シーホーク（福岡県福岡市）
- Year and Date
  2015-05-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] 低消費LSIのためのIII-V族半導体およびGe/ひずみSOIトンネルFETテクノロジー2015
- Author(s)
  高木信一, 金閔洙, 野口宗隆, ジ・サンミン, 西康一, 竹中充
- Organizer
  応用物理学会シリコンテクノロジー分科会共催研究集会第184回研究集会「先端CMOSデバイス・プロセス技術（VLSIシンポジウム特集）」
- Place of Presentation
  甲南大学ネットワークキャンパス東京（東京都千代田区）
- Year and Date
  2015-08-17
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs2015
- Author(s)
  X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Ge/SiGe CMOS device technology for future logic LSIs2015
- Author(s)
  S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
- Organizer
  E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices"
- Place of Presentation
  Lille Grand Palace, Lille, France
- Year and Date
  2015-05-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation2015
- Author(s)
  M. Ke, X. Yu, M. Takenaka and S. Takagi
- Organizer
  46th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  Key Bridge Marriott, Arlington, USA
- Year and Date
  2015-12-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications2015
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  13th International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  龍谷大学アバンティ京都ホール（京都府京都市）
- Year and Date
  2015-06-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs2015
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  15th IEEE International Conference on Nanotechnology
- Place of Presentation
  Angelicum Congress Centre, Rome, Italy
- Year and Date
  2015-07-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Ge/III-V MOS Device Technologies for Low Power Integrated Systems2015
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  45th European Solid-State Device Conference (ESSDERC)
- Place of Presentation
  Messe Congress Graz Betriebsgesellschaft, Graz, Austria
- Year and Date
  2015-09-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Gate stack technologies for high mobility channel MOSFETs2015
- Author(s)
  S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
- Organizer
  2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
- Place of Presentation
  Moscone West Convention Cener, San Francisco, USA
- Year and Date
  2015-04-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V and Ge tunneling FET technologies for low power LSIs2015
- Author(s)
  S. Takagi, M.-S. Kim, M. Noguchi, S.-M. Ji, K. Nishi and M. Takenaka
- Organizer
  Symposia on VLSI Technology
- Place of Presentation
  京都リーガローヤルホテル（京都府京都市）
- Year and Date
  2015-06-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Tunneling FET Device Technologies Using III-V and Ge Materials2015
- Author(s)
  S. Takagi, M. Kim, M. Noguchi, K. Nishi, M. Takenaka
- Organizer
  4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S)
- Place of Presentation
  University of California, Berkeley, California, USA
- Year and Date
  2015-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation2015
- Author(s)
  Rui Zhang, Mitsuru Takenaka, Shinichi Takagi
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] nチャネルGel-xSnx MOSFETの電流-電圧特性へのSn組成依存性2014
- Author(s)
  浅野孝典, 田岡紀之, 加藤公彦, 坂下満男, 張睿, 横山正史, 竹中充, 高木信一、財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価2014
- Author(s)
  田中克久，張睿，竹中充，高木信一
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V and Germanium FET Technologies on Si platform2014
- Author(s)
  S. Takagi
- Organizer
  Compound Semiconductor International Conference
- Place of Presentation
  Sheraton Frankfurt Airport Hotel, Frankfurt, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs2014
- Author(s)
  S.Takagi and M.Takenaka
- Organizer
  7th International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Swissotel Merchant Court, Singapore, Singapore
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014
- Author(s)
  X.Yu, R.Zhang, J.Kang, T.Osada, M.Hata, M.Takenaka and S.Takagi
- Organizer
  21st International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
- Place of Presentation
  Ambassador Hotel Hsinchu, Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014
- Author(s)
  X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka and S. Takagi
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks2014
- Author(s)
  R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt and S. Takagi
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET2014
- Author(s)
  金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Performance Enhancement Technologies in III-V/Ge MOSFETs2013
- Author(s)
  S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
- Organizer
  224th Fall meeting of the Electrochemical Society, ULSI Process Integration 8
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS interface engineering for high-mobility Ge CMOS2013
- Author(s)
  M. Takenaka, R. Zhang, S. Takagi
- Organizer
  IEEE International Reliability Physics Symposium (IRPS'13)
- Place of Presentation
  Monterey, USA(招待講演)
- Year and Date
  2013-04-17
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing2013
- Author(s)
  R. Zhang, J-C. Lin, X. Yu, M. Takenaka, and S. Takagi
- Organizer
  VLSI Symposium
- Place of Presentation
  Rihga Royal Hotel, Kyoto
- Year and Date
  2013-06-11
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Place of Presentation
  Grand Hôtel de Paris, Villard de Lans, France
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013
- Author(s)
  R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
- Organizer
  2013 Symposia on VLSI Technology
- Place of Presentation
  リーガロイヤルホテル京都（京都府京都市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013
- Author(s)
  S.Takagi and M.Takenaka
- Organizer
  International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Place of Presentation
  Grand Hotel de Paris, Villard de Lans, France
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS interface engineering for high-mobility Ge CMOS2013
- Author(s)
  M.Takenaka, R.Zhang, and S.Takagi
- Organizer
  International Reliability Physics Symposium (IRPS)
- Place of Presentation
  Hyatt Regency Monterey, Monterey, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation2013
- Author(s)
  R.Zhang, W.Chern, X.Yu, M.Takenaka, J.L.Hoyt and S.Takagi
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington Hilton, Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation Hf02/Al203/GeOx gate stacks and strain modulation2013
- Author(s)
  R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt, S. Takagi
- Organizer
  International Electron Devices Meeting (IEDM' 13)
- Place of Presentation
  Wasnington Hilton, Washington D. C., U.S.A.
- Year and Date
  2013-12-11
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Limiting factors of channel mobility in III-V/Ge MOSFETs2013
- Author(s)
  S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
- Organizer
  223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
- Place of Presentation
  The Sheraton Centre Toronto Hotel, Toronto, Canada
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge device engineering for CMOS photonics2013
- Author(s)
  M. Takenaka and S. Takagi
- Organizer
  8th international conference on processing and manufacturing of advanced materials (THERMEC2013)
- Place of Presentation
  Rio Hotel, Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge CMOS device technologies2013
- Author(s)
  S.Takagi and M.Takenaka
- Organizer
  20th Symposium on Nano Device Technology (SNDT)
- Place of Presentation
  International Conference Hall of Nano Device Laboratory, Hsinchu, Taiwan
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013
- Author(s)
  S. Takagi, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
- Organizer
  2013 MRS (Material Research Society) Spring Meeting, Symposium CC “Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory”
- Place of Presentation
  Moscone Center, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation2013
- Author(s)
  S. Takagi, R. Zhang and M. Takenaka
- Organizer
  JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”
- Place of Presentation
  九州大学医学部百年講堂（福岡県福岡市）
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility CMOS Technologies using III-V/Ge Channels2013
- Author(s)
  S.Takagi and M.Takenaka
- Organizer
  IEEE Nanotechnology Materials and Devices Conference (NMDC)
- Place of Presentation
  National Cheng Kung University, Tainan, Taiwan
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013
- Author(s)
  S.Takagi, R.Zhang and M.Takenaka
- Organizer
  18th Conference of "Insulating Films on Semiconductors" (INFOS)
- Place of Presentation
  The Jagiellonian University, Cracow, Poland (plenary)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures2013
- Author(s)
  J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
- Organizer
  6th International Symposium on Control of Semiconductor Interfaces (ISCSI)
- Place of Presentation
  九州大学医学部百年講堂（福岡県福岡市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures2013
- Author(s)
  J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces2013
- Author(s)
  R.Zhang, Ju-Chin Lin, X.Yu, M.Takenaka and S.Takagi
- Organizer
  18th Conference of "Insulating Films on Semiconductors" (INFOS)
- Place of Presentation
  The Jagiellonian University, Cracow, Poland
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 酸化濃縮基板へのSbドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs2013
- Author(s)
  金佑彊, 忻宇飛, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 原子層平坦GeOx/Ge界面によるGe MOSFETsの高電界領域移動度の向上2013
- Author(s)
  張睿，黄博勤，林汝静，竹中充，高木信一
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOS interface engineering for high-mobility Ge CMOS2013
- Author(s)
  M. Takenaka, R. Zhang, S. Takagi
- Organizer
  IEEE International Reliability Physcis Symposium (IRPS' 13)
- Place of Presentation
  Hyatt Regency Monterey Hotel and Spa, Monterey, U.S.A.
- Year and Date
  2013-04-17
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013
- Author(s)
  S.Takagi, R.Zhang, N.Taoka, R.Suzuki, S.-H.Kim, M.Yokoyama, and M.Takenaka
- Organizer
  2013 MRS (Material Research Society) Spring Meeting, Symposium CC "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory"
- Place of Presentation
  Moscone Center, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術2013
- Author(s)
  竹中充, 高木信一
- Organizer
  第77回半導体・集積回路技術シンポジウム
- Place of Presentation
  東京工業大学蔵前会館（東京都目黒区）
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 0.7 nm超薄EOT HfO2/Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge CMOS2013
- Author(s)
  張睿，林汝静，黄博勤，田岡紀之，竹中充，高木信一
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility Channel CMOS Technology2013
- Author(s)
  S. Takagi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM) Short Course, A. Fundamentals on Advanced CMOS/Memory technologies
- Place of Presentation
  ヒルトン福岡シーホーク（福岡県福岡市）
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Sb-diffused source/drain ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation2013
- Author(s)
  W. K. Kim, Y. Kin, Y. H. Kim, S. H. Kim, T. Osada, M. Hata, M. Takenaka, and S. Takagi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka city, Fnkuoka
- Year and Date
  2013-09-27
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks2013
- Author(s)
  S. Takagi
- Organizer
  6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar - Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  東北大学、宮城県
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ge oxide growth by plasma oxidation of Ge substrates through Al2O3 Layers2013
- Author(s)
  R. Zhang, J.-C. Lin, M. Takenaka, and S. Takagi
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Thickness dependent performance of (111) GaAs UTB nMOSFETs2013
- Author(s)
  K. Alam, S. Takagi, and M. Takenaka
- Organizer
  16th International Workshop on Computational Electronics (IWCE)
- Place of Presentation
  奈良県新公会堂, 奈良県
- Data Source
  KAKENHI-PROJECT-12F02063
[Presentation] III-V/Ge CMOS device technologies for high performance logic applications2013
- Author(s)
  S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
- Organizer
  223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
- Place of Presentation
  The Sheraton Centre Toronto Hotel, Toronto, Canada
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge MOS Interface Control Using and High k Films2013
- Author(s)
  S.Takagi, R.Zhang, R.Suzuki, C.-Y.Chang, N.Taoka, S.-H.Kim, M.Yokoyama and M.Takenaka
- Organizer
  15th Asian Chemical Congress (15ACC)
- Place of Presentation
  Resorts World Sentosa, Singapore, Singapore
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge device engineering for CMOS photonics2013
- Author(s)
  M. Takenaka and S. Takagi
- Organizer
  International Conference on Processing Manufacturing of Advanced Materials (THERMEC2013)
- Place of Presentation
  Rio Hotel, Las Vegas, U.S.A.
- Year and Date
  2013-11-20
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOS interface control of high mobility channel materials for advanced CMOS applications2013
- Author(s)
  S.Takagi, R.Zhang, R.Suzuki, N.Taoka, M.Yokoyama and M.Takenaka
- Organizer
  3rd Molecular Materials Meeting (M3)
- Place of Presentation
  Singapore, Singapore
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Heterogeneous integration for CMOS photonics2013
- Author(s)
  M. Takenaka and S. Takagi
- Organizer
  3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013)
- Place of Presentation
  Eneos Hall, Meguro-ku, Tokyo
- Year and Date
  2013-11-20
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013
- Author(s)
  R.Zhang, J-C.Lin, X.Yu, M.Takenaka and S.Takagi
- Organizer
  2013 Symposia on VLSI Technology
- Place of Presentation
  リーガロイヤルホテル京都(京都府京都市)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ultra-thin body MOS device technologies using high mobility channel materials2013
- Author(s)
  S.Takagi, S.-H.Kim, M.Yokoyama, W.-K.Kim, R.Zhang and M.Takenaka
- Organizer
  IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
- Place of Presentation
  Hyatt Regency Monterey Hotel and Spa, Monterey, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ge p- and n-MOSFETの高電界領域での移動度劣化機構の解析2013
- Author(s)
  張睿，黄博勤，林汝静，竹中充，高木信一
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing2013
- Author(s)
  R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 低消費電力CMOSのため高移動度チャネルトランジスタ技術2013
- Author(s)
  高木信一
- Organizer
  第29回　(2013) 京都賞記念ワークショップ先端技術部門「集積回路の発展50年とその未来－超高集積メモリ・省電力LSI に向けてー」
- Place of Presentation
  国立京都際会館（京都府京都市）
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013
- Author(s)
  S. Takagi, R. Zhang and M. Takenaka
- Organizer
  18th Conference of "Insulating Films on Semiconductors" (INFOS)
- Place of Presentation
  The Jagiellonian University, Cracow, Poland
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Ge n- and p-MOSFETs with ～1nm EOT Al2O3/GeOx/Ge Gate Stacks2012
- Author(s)
  張睿、田岡紀之、黄博勤、竹中充、高木信一
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Physical mechanism determining Ge p- and n-MOSFETs mobility in high ns region and mobility improvement by atomically flat GeOx/Ge interfaces2012
- Author(s)
  R. Zhang, P.C. Huang, J.C. Lin, M. Takenaka, S. Takagi
- Organizer
  International Electron Devices Meeting (IEDM’12)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012
- Author(s)
  S. Takagi
- Organizer
  Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics 10, Symposium E4 of the 222nd Electrochemical Society (ECS) Meeting
- Place of Presentation
  Honolulu, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
- Place of Presentation
  Grenoble, France(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Channel CMOS Transistors - Beyond Silicon2012
- Author(s)
  S. Takagi
- Organizer
  2012 International Electron Devices Meeting (IEDM) tutorial
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation2012
- Author(s)
  R. Zhang, P.-C. Huang, N. Taoka, M. Takenaka, S. Takagi
- Organizer
  VLSI Symposium
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Advanced Nano CMOS Platform using High Mobility Channel Materials2012
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  International Symposium on Secure-Life Electronics-Advanced Electronics and Information Systems for Quality Life and Society-
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS2012
- Author(s)
  S.Takagi, S,-H, Kim, R.Zhang, M.Yokoyama, N.Taoka and M.Takenaka
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM 2011)
- Place of Presentation
  国立京都国際会館、京都府
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012
- Author(s)
  R. Zhang, P. Huang, J. Lin, M. Takenaka, and S. Takagi
- Organizer
  The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility Ge n- and p-MOSFETs with 1nm EOT Al2O3/GeOx/Ge Gate stacks2012
- Author(s)
  R.Zhang, N.Taoka, P.-C.Huang, M.Takenaka, S.Takagi
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京(受賞講演)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS interface and channel engineering for high-mobility Ge/III-V CMOS2012
- Author(s)
  S.Takagi, R.Zhang, S.-H Kim, N.Taoka, M.Yokoyama, J.-K.Suh, R.Suzuki, Y.Asakura, C.Zota and M.Takenaka
- Organizer
  2012 International Electron Devices Meeting (IEDM)
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces2012
- Author(s)
  R.Zhang, P.-C.Huang, J.-C.Lin, M.Takenaka and S.Takagi
- Organizer
  2012 International Electron Devices Meeting (IEDM)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 0.7 nm超薄EOT HfO2/Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFETs2012
- Author(s)
  張睿、林汝静、黄博勤、田岡紀之、竹中充、高木信一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012
- Author(s)
  S.Takagi and M.Takenaka
- Organizer
  13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
- Place of Presentation
  Grenoble, France
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 異種材料(Si/Ge/化合物半導体)集積化技術2012
- Author(s)
  高木信一
- Organizer
  Electronic Journal第984回Technical Seminar
- Place of Presentation
  東京
- Year and Date
  2012-01-30
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 高移動度チャネルCMOSデバイス2012
- Author(s)
  高木信一
- Organizer
  応用物理学会シリコンテクノロジー分科会第152回研究集会
- Place of Presentation
  産業技術総合研究所、東京都
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012
- Author(s)
  R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
- Organizer
  Symposium on 5th International SiGe, Ge, & Related Compounds : Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2012
- Author(s)
  R.Zhang, P.C.Huang, N.Taoka, M.Takenaka and S.Takagi
- Organizer
  Symposium on VLSI technology
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Advanced CMOS Technologies using III-V/Ge Channels2011
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  11th International Symposium on VLSI Technology, System and Applications (VLSI-TSA)
- Place of Presentation
  Hsinchu, Taiwan(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era (plenary talk)2011
- Author(s)
  S.Takagi
- Organizer
  IEEE Nanotechnology Materials and Device Conference (NMDC)
- Place of Presentation
  Jeju, Korea(invited)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011
- Author(s)
  R.Zhang, N.Taoka, P.Huang, M.Takenaka and S.Takagi
- Organizer
  International Electron Devices Meeting (IEDM)
- Place of Presentation
  Washington DC., USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era2011
- Author(s)
  S.Takagi
- Organizer
  IEEE Nanotechnology Materials and Device Conference (NMDC)
- Place of Presentation
  Jeju, Korea (plenary)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011
- Author(s)
  S.Takagi, R.Zhang, N.Taoka and M.Takenaka
- Organizer
  41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
- Place of Presentation
  Arlington, VA, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFETs2011
- Author(s)
  張睿、田岡紀之、岩崎敬志、竹中充、高木信一
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge HOS interface Properties2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  7th Conference on Insulating Films on Semiconductor
- Place of Presentation
  Grenoble, France
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Mobility Enhancement of Strained-SGOI p-Channel MOSFETs by Applying Ge Condensation Technique to Strained-SOI Substrates2011
- Author(s)
  J.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
- Organizer
  17th Conference on "Insulating Films on Semiconductors"
- Place of Presentation
  Grenoble, France
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Ge pMOSFETs with 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  Symposium on VLSI technology
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Non-Si Channel MOS Device Technologies in Nano-CMOS era2011
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  2011 Tsukuba Nanotechnology Symposium (TNS' 11)
- Place of Presentation
  つくば、茨城(invited)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Mobility enhancement of strained-SGOI p-channel MOSFETs by applying Ge condensation technique to strained-SOI substrates2011
- Author(s)
  徐準教、中根了昌、田岡紀之、竹中充、高木信一
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation2011
- Author(s)
  R. Zhang, N. Taoka, P. Huang, M. Takenaka, S. Takagi
- Organizer
  International Electron Devices Meeting (IEDM2011)
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Device and integration technologies of III-V/Ge channel CMOS2011
- Author(s)
  S.Takagi, M.Yokoyama, Y.-H.Kim, M.Takenaka
- Organizer
  Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
- Place of Presentation
  Boston, Massachusetts, USA(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET2011
- Author(s)
  張睿, 岩崎敬志, 田岡紀之, 竹中充, 高木信一
- Organizer
  応用物理学会シリコンテクノロジー分科会第139回研究集会
- Place of Presentation
  東京(招待講演)
- Year and Date
  2011-07-21
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Materials : III-V/Ge FETs (IEDM short course)2011
- Author(s)
  S.Takagi
- Organizer
  ternational Electron Devices Meeting (IEDM)
- Place of Presentation
  Washington DC, USA(invite)
- Year and Date
  2011-12-04
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011
- Author(s)
  J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  37th Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Nobility Ge pMOSFETs with 1nm Thin EOT Al2O3/GeOx/Ge Gate stacks2011
- Author(s)
  R.Zhang, N.Taoka, T.Iwasaki, M.Takenaka, S.Takagi
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Channel/Stress Engineering for Advanced CMOS Devices : Performance Booster2011
- Author(s)
  高木信一
- Organizer
  16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), (Tutorial 1) Advanced CMOS Device Technologies (1)
- Place of Presentation
  Pacifico, Yokohama, Kanagawa, Japan
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011
- Author(s)
  J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka and S.Takagi
- Organizer
  37th Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, USA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011
- Author(s)
  R.Zhang, N.Taoka, P.Huang, M.Takenaka, S.Takagi
- Organizer
  International Electron Devices Meeting (IEDM)
- Place of Presentation
  Washington DC, DSA
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Prospective and critical issues of III-V/Ge CMOS on Si platform2011
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  219th Electrochemical Society Meeting, Symposium E3 : International Symposiu on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications -3
- Place of Presentation
  Montreal, Canada(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Non-Si材料チャネルMOSトランジスタの研究開発動向2011
- Author(s)
  高木信一, 竹中充
- Organizer
  日本学術振興会ナノプローブテクノロジー第167委員会第63回研究会
- Place of Presentation
  神奈川(招待講演)
- Year and Date
  2011-07-28
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates2011
- Author(s)
  J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
- Organizer
  Device Research Conference (DRC 2011)
- Place of Presentation
  Santa Barbara, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011
- Author(s)
  S.Takagi, R.Zhang, N.Taoka, M.Takenaka
- Organizer
  41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
- Place of Presentation
  Arlington, VA, USA(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Material Channel CMOS Technologies based on Heterogeneous Integration (Keynote Speech)2011
- Author(s)
  S.Takagi, M.Takenaka
- Organizer
  11th International Workshop on Junction Technology (IWJT2011)
- Place of Presentation
  Kyoto, Japan(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] MOS interface control technologies for III-V/Ge channel MOSFETs2011
- Author(s)
  S.Takagi, R.Zhang, T.Hoshii, M.Takenaka
- Organizer
  Symposium on High Dielectric Constant and other Dielectric Materials for Nanoeleectronics and Photonics 9, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
- Place of Presentation
  Boston, Massachusetts, USA(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Impact of GeOx interfacial layer thickness of Al2O3/Ge MOS interface Properties2011
- Author(s)
  R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi
- Organizer
  17th Conference on Insulating Films on Semiconductors (INFOS' 11)
- Place of Presentation
  Grenoble, France
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] (III-V/Ge)-On-Insulator CMOS Technology2011
- Author(s)
  S.Takagi
- Organizer
  37th IEEE International SOI Conference
- Place of Presentation
  Tempe, Arizona, USA(invited)
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High Mobility Ge pMOSFETs with ~ 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
- Organizer
  VLSI symp.
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] Channel Engineering for Advanced CMOS Devices (SSDM short course)2011
- Author(s)
  S.Takagi
- Organizer
  2011 International Conference on Solid state Devices and Materials (SSDM 2011)
- Place of Presentation
  名古屋(invited)
- Year and Date
  2011-09-27
- Data Source
  KAKENHI-PROJECT-23246058
[Presentation] High mobility Ge pMOSFETs with ~ 1nm thin EOT using Al2O3/GeOx/Ge Gate Stacks fabricated by plasma post oxidation2011
- Author(s)
  R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi
- Organizer
  VLSI Symposium., 4A-1, , June 2011
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Channel/Stress Engineering for Advanced CMOS Devices : Performance Booster2011
- Author(s)
  S.Takagi
- Organizer
  16th Asia and South Pacific Design Automation Conference(ASP-DAC 2011), (Tutorial 1)Advanced CMOS Device Technologies(1)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] CMOSプラットフォーム上の高移動度チャネルMOSトランジスタ技術2010
- Author(s)
  高木信一
- Organizer
  TRC第7回半導体デバイス分析セミナー
- Place of Presentation
  東京コンファレンスセンター品川、東京都
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] 気相拡散によるソース・ドレイン接合を用いた高性能GeO2/Ge nMOSFET2010
- Author(s)
  森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Mobility CMOS Technologies using Ge-based Channels2010
- Author(s)
  高木信一, 竹中充
- Organizer
  5th international SiGe Technology and Device Meeting(ISTDM)
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Evidence of Correlation between Surtace Roughness and Intertace States Generationin Unstrained and Strained-Si MOSFETs2010
- Author(s)
  Y.Zhao, M.Takenaka, S. Takagi
- Organizer
  2010 Symposium on VLSI Technology
- Place of Presentation
  Horwlulu, Hawaii, USA
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] 気相拡散により形成したソース・ドレイン接合を用いた高性能GeO2/Ge nMOSFET2010
- Author(s)
  森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
- Organizer
  電気学会「グリーンITにおける化合物半導体電子デバイス」調査専門委員会
- Place of Presentation
  大岡山、東京
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 二軸引張りひずみSi MOS電子・正孔反転層における界面電荷・基板不純物によるクーロン散乱に与える影響の統一的な物理機構2010
- Author(s)
  趙毅, 竹中充, 高木信一
- Organizer
  第57回応物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] MOVPEを用いた気相ドーピングによる高品質Ge n+/p接合の形成およびGe nMOSFETへの応用2010
- Author(s)
  竹中充, 森井清仁, 高木信一
- Organizer
  電気学会シリコンナノデバイス集積化技術調査専門委員会・化合物半導体電子デバイス調査専門委員会合同委員会「高移動度化技術」
- Place of Presentation
  早稲田、東京
- Year and Date
  2010-03-05
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度及びその引張り歪みの影響の定量評価2010
- Author(s)
  趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東京大学、神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] 酸化濃縮法により生成したSGOI中の圧縮ひずみと酸化前基板構造の関係2010
- Author(s)
  富山健太郎, Dissanayake Sanjeewa, 竹中充, 高木信一
- Organizer
  第57回応用物理学関係迎合講演会
- Place of Presentation
  東海大学、神奈川県
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Siプラットフォーム上のIII-V/GeチャネルMOSトランジスタ技術2010
- Author(s)
  高木信一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 二軸引張りひずみSi MOS電子・正孔反転層における界面電荷・基板不純物によるクーロン散乱に与える影響の統一的な物理機構2010
- Author(s)
  趙毅, 竹中充, 高木信一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Evidence of Correlation between Surface Roughness and Interface States Generation in Unstrained and Strained-Si MOSFETs2010
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Organizer
  2010 Symposium on VLSI Technology
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO_22010
- Author(s)
  R.Zhang, T.Iwasaki, M.Takenaka, S.Takagi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM'10)
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Si MOS界面ラフネス散乱による移動度とひずみの効果(招待講演)2010
- Author(s)
  高木信一, 趙毅, 竹中充, 松本弘昭, 佐藤岳志, 小山晋
- Organizer
  応用物理学会シリコンテクノロジー分科会第121回研究集会「半導体シリコン単結晶ウェーハを特徴づける評価技術」
- Place of Presentation
  学習院大学、東京
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] High Mobility Ge CMOS Technologies2010
- Author(s)
  高木信一, 竹中充
- Organizer
  5th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Si MOS界面ラフネス散乱による移動度とひずみの効果2010
- Author(s)
  高木信一, 趙毅, 竹中充, 松本弘昭, 佐藤岳志, 小山晋
- Organizer
  応用物理学会シリコンテクノロジー分科会第121回研究集会「半導体シリコン単結晶ウェーハを特徴づける評価技術」
- Place of Presentation
  学習院大学、東京(招待講演)
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] A Plasma Assisted Top-to-Bottom Assembly of Ge/GeOx/Al2O3 Gate Stack with Superior Electrical Properties2010
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Siプラットフォーム上の高移動度チャネルCMOS技術2010
- Author(s)
  高木信一
- Organizer
  第4回九州大学稲盛フロンティア研究講演会
- Place of Presentation
  九州大学伊都キャンパス、福岡県
- Year and Date
  2010-06-11
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Siプラットフォーム上の高移動度チャネルCMOS技術2010
- Author(s)
  高木信一
- Organizer
  第4回九州大学稲盛フロンティア研究講演会
- Place of Presentation
  九州大学伊都キャンパス、福岡県
- Year and Date
  2010-06-11
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Suppression of ALD-Induced Degradation on ultra thin GeO2 using Low Power Plasma Nitridation2010
- Author(s)
  R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Thin EOT and low D_<it>Al_2O_3/GeO_x/Ge Gate stacks fabricated by novel post-oxidation method2010
- Author(s)
 R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
 IEEE Semiconductor Interface Specialists conference (SISC'10)
- Place of Presentation
 Washington D.C., USA
- Year and Date
 2010-12-03
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] III-V/Ge CMOS technologies on Si platform2010
- Author(s)
  高木信一, 竹中充
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度及びその引張り歪みの影響の定量評価2010
- Author(s)
  趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Electrical Properties of(110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique2009
- Author(s)
  S.Dissanayake, Y.Shuto, S.Sugahara, M.Takenaka, S.Takagi
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance(110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009
- Author(s)
  S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
- Organizer
  International Conference on Solid Sate Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Ge/III-V Channel CMOS Technologies on Si platform (invited)2009
- Author(s)
  S. Takagi
- Organizer
  First Korea-Japan Nano Forum, NANO KOREA 2009
- Year and Date
  2009-08-28
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance Ge MOS Device Technologies (invited)2009
- Author(s)
  S. Takagi
- Organizer
  1st International Workshop on Si based nano-electronics and -photonics (SiNEP-09)
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 高精度TEMと新しいデータ分析方法によるMOS界面ラフネス移動度の定量評価及び引張り歪からの影響2009
- Author(s)
  趙毅, 松本弘昭, 佐藤岳志, 小山晋, 竹中充, 高木信一
- Organizer
  第73回半導体・集積回路技術シンポジウム
- Place of Presentation
  東京農工大学、東京
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Ge/III-V Channel CMOS Technologies on Si platform2009
- Author(s)
  高木信一
- Organizer
  First Korea-Japan Nano Forum, NANO KOREA 2009
- Place of Presentation
  Soeul, Korea
- Year and Date
  2009-08-28
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Mobility Channel CMOS Technologies for Realizing High Performance LSI's2009
- Author(s)
  高木信一
- Organizer
  2009 Custom Integrated Circuits Conference (CICC)
- Place of Presentation
  San Jose, California, USA(invited)
- Year and Date
  2009-09-13
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] New channel material MOSFETs on Si platform2009
- Author(s)
  高木信一
- Organizer
  International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Interfacial Control and Electrical Properties of Ge MOS structures2009
- Author(s)
  S.Takagi, N.Taoka, M.Takenaka
- Organizer
  10th International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics, 215th Meeting of The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Mobility Channel CMOS Technologies for Realizing High Performance LSI's (invited)2009
- Author(s)
  S.Takagi
- Organizer
  2009 Custom Integrated Circuits Conference (CICC)
- Place of Presentation
  San Jose, California USA
- Year and Date
  2009-09-13
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] S.Takagi, "High Mobility Channel CMOS Technologies for Realizing High Performance LSI's2009
- Author(s)
  高木信一
- Organizer
  2009 Custom Integrated Circuits Conference(CICC)
- Place of Presentation
  San Jose, California, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Advanced Nano CMOS Platform using Ge/III-V Channels2009
- Author(s)
  S. Takagi, M. Sugiyama and M. Takenaka
- Organizer
  First International Symposium on Atomically Controlied Fabrication Technology-Surface and Thin Film Processing-
- Place of Presentation
  Osaka, Japan(invited)
- Year and Date
  2009-02-17
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Ge/III-V Channel Engineering for future CMOS (invited)2009
- Author(s)
  S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
- Organizer
  1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215 th Meeting of The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Impact of plasma nitridation of thermally-grown GeO2/Ge MIS structures on the GeO2 film and interface properties2009
- Author(s)
  T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC)
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance Ge MOS Device Technologies2009
- Author(s)
  高木信一
- Organizer
  1st International Workshop on Si based nano-electronics and-photonics(SiNEP-09)
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009
- Author(s)
  S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  SSDM
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping2009
- Author(s)
  森井清仁, 岩崎敬志, 中根了昌, 竹中充, 高木信一
- Organizer
  International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Interfacial Control and Electrical Properties of Ge MOS structures (invited)2009
- Author(s)
  S. Takagi, N. Taoka, M. Takenaka
- Organizer
  10th International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics, 215 th Meeting of The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping2009
- Author(s)
  K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, S. Takagi
- Organizer
  International Electron Device Meeting
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained-and Strained-Si MOSFETs by Novel Characterization Scheme of Si/SiO2 Interface Roughness2009
- Author(s)
  Y.Zhao, H.Matsumoto, T.Sato, S.Koyama, M.Takenaka, S.Takagi
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Ge/III-V Channel Engineering for future CMOS2009
- Author(s)
  S.Takagi, M.Sugiyama, T.Yasuda, M.Takenaka
- Organizer
  1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215th Meeting of The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by Novel Characterization Scheme of Si/SiO2 Interface Roughness2009
- Author(s)
  Y.Zhao, H.Matsumoto, T.Sato, S.Koyama, M.Takenaka, S.Takagi
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs2009
- Author(s)
  M. Takenaka, M. Sugiyama, Y. Nakano, S. Takagi
- Organizer
  Symposium I: Silicon and Germanium issues for future CMOS devices, E-MRS 2009
- Place of Presentation
  Strasbourg (France)
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Mobility Channel CMOS Technologies for Realizing High Performance LSI's (invited)2009
- Author(s)
  S. Takagi
- Organizer
  2009 Custom Integrated Circuits Conference (CICC)
- Place of Presentation
  San Jose, California
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Impact of plasma nitridation of thermally-grown GeO2/Ge MIS structures on the GeO2 film and interface properties2009
- Author(s)
  T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs2009
- Author(s)
  M.Takenaka, M.Sugiyama, Y.Nakano, S.Takagi
- Organizer
  Symposium I : Silicon and Germanium issues for future CMOS devices, E-MRS 2009
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] New channel material MOSFETs on Si platform(invited)2009
- Author(s)
  S. Takagi
- Organizer
  International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Understanding and Engineering of Carrier TraOsport in Advanced MOS Channels(plenary)2008
- Author(s)
  S.Takagi
- Organizer
  2008 International Conference on Simulation of Semiconductor Processes and Devices(SISPAD)
- Place of Presentation
  Hakone, Japan
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008
- Author(s)
  Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka and S. Takagi
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels2008
- Author(s)
  Shinichi Takagi
- Organizer
  2008 International Symposium on VLSI Technology, Systems, and Applications
- Place of Presentation
  Hsinchu, Taiwan(invited)
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Devices for high performance CMOS2008
- Author(s)
  Shinichi Takagi
- Organizer
  38th European Solid-State Device Research Conference (ESSDERC), Workshop on Germanium and III-V MOS Technology
- Place of Presentation
  Edinburgh, UK(invited)
- Year and Date
  2008-09-19
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High mobility channel MOSFET2008
- Author(s)
  S.Takagi
- Organizer
  8th European Solid-State Device Research Conference(ESSDERC)
- Place of Presentation
  Edinburgh, United Kingdom
- Year and Date
  2008-09-15
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] 新チャネル材料を使った高電流駆動力CMOSデバイス技術(招待講演)2008
- Author(s)
  高木信一
- Organizer
  第72回半導体集積回路技術シンポジウム
- Place of Presentation
  於東京農工大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Understanding and Engineering of Carrier Transport in Advanced MOS Channels (plenary)2008
- Author(s)
  高木信一
- Organizer
  2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Place of Presentation
  Hakone, Japan
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] [チュートリアル講演]高性能CMOSのための高移動度チャネル技術の現状と展望2008
- Author(s)
  高木信一
- Organizer
  電子情報通信学会シリコン材料・デバイス(SDM)研究会
- Place of Presentation
  於東京大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High mobility channel MOSFET2008
- Author(s)
  Shinichi Takagi
- Organizer
  38th European Solid-State Device Research Conference (ESSDERC), Tutorials "Ti : CMOS at the bleeding edge"
- Place of Presentation
  Edinburgh, UK(invited)
- Year and Date
  2008-09-15
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008
- Author(s)
  Yosuke Nakakita, Ryosho Nakane, Takashi Sasada, Hiroshi Matsubara, M. Takenaka, S. Takagi
- Organizer
  International Electron Device Meeting
- Place of Presentation
  San Fracisco, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Understanding and Engineering of Carrier Transport in Advanced MOS Channels2008
- Author(s)
  Shinichi Takagi
- Organizer
  2008 International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  Hakone, Japan(plenary)
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High mobility channel MOSFET (invited)2008
- Author(s)
  S. Takagi
- Organizer
  ESSDERC Tutorials "T1: CMOS at the bleeding edge", 38th European Solid-State Device Research Conference
- Place of Presentation
  Edinburgh, UK
- Year and Date
  2008-09-15
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Improvement of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation2008
- Author(s)
  T. Sasada, H. Matsubara, M. Takenaka, S. Takagi
- Organizer
  2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs2008
- Author(s)
  Y.Zhao, M.Takenaka and S.Takagi
- Organizer
  International Electron Device Meeting(IEDM)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Understanding and Engineering of Carrier Transport in Advanced MOS Channels (plenary)2008
- Author(s)
  S. Takagi
- Organizer
  2008 International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  Hakone, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels(invited)2008
- Author(s)
  S.Takagi
- Organizer
  2008 International Symposium on VLSI Technology, Systems, and Applications(VLSI-TSA)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels2008
- Author(s)
  高木信一
- Organizer
  2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
- Place of Presentation
  Hsinchu, Taiwan(invited)
- Year and Date
  2008-04-21
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs2008
- Author(s)
  Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe, Ryosho Nakane, Mitsuru Takenaka, Satoshi Sugahara, Shinichi Takagi
- Organizer
  2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Surface Orientation Dependence of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation2008
- Author(s)
  Takashi Sasada, Yosuke Nakakita, Mitsuru Takenaka, Shinichi Takagi
- Organizer
  39th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxiallystrained Si MOSFETs2008
- Author(s)
  Y.Zhao, M.Takenaka, S.Takagi
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  San Francisco, USA
- Year and Date
  2008-12-15
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] 先端CMOSのためのデバイス性能向上技術(招待講演)2008
- Author(s)
  高木信一
- Organizer
  SEMI Forum Japan 2008
- Place of Presentation
  於大阪国際会議場
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels (invited)2008
- Author(s)
  Shinichi Takagi
- Organizer
  2008 International Symposium on VLSI Technology, Systems, and Applications
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers2008
- Author(s)
  Y. Nakakita, R. Nakane, T. Sasada, H. Matsubara, M. Takenaka and S. Takagi
- Organizer
  International Electron Device Meeting, pp. 877-880
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High mobility channel MOSFET2008
- Author(s)
  高木信一
- Organizer
  8th European Solid-State Device Research Conference (ESSDERC)
- Place of Presentation
  Edinburgh, United Kingdom
- Year and Date
  2008-09-15
- Data Source
  KAKENHI-PROJECT-20246055
[Presentation] Electrical Characteristics of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2008
- Author(s)
  Sanjeewa Dissanayake, Yusuke Shuto, Satoshi Sugahara, Mitsuru Takenaka, Shinichi Takagi
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  於中部大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Devices for high performance CMOS (invited)2008
- Author(s)
  S. Takagi
- Organizer
  Workshop on Germanium and III-V MOS Technology, 38th European Solid-State Device Research Conference
- Place of Presentation
  Edinburgh, UK
- Year and Date
  2008-09-19
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007
- Author(s)
  S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara, M. Takenaka
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Gate Dielectric Formation and MIS interface Characteriation on Ge(invited)2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. lkeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
- Organizer
  15th lnsulating Films on Semiconductors(INFOS2007)
- Place of Presentation
  Athens, Greece
- Year and Date
  2007-06-23
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Gate Dielectric Formation and MIS Interface Characterization on Ge (invited)2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
- Organizer
  15th Insulatring Films on Semiconductors (INFOS2007)
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] ナノCMOS時代のデバイス高性能化技術(High Performance Device Technologies in Nano CMOS Era)2007
- Author(s)
  高木信一
- Organizer
  東京大学21世紀COEプログラム「未来社会を担うエレクトロニクスの展開」最終シンポジウム「豊かな社会を築くセキュアライフ・エレクトロニクス」
- Place of Presentation
  東京大学本郷キャンパス・工学部2号館1階213大講堂
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced MOS Device Technologies in Nano-CMOS era (plenary talk)2007
- Author(s)
  S. Takagi
- Organizer
  Device Research Conference (DRC)
- Place of Presentation
  South Bend, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007
- Author(s)
  S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara and M. Takenaka
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Fabrication of(110)GOI Layers by Ge Condensation of SiGe/(110)SOI Structure and Application to pMOSFET Devices2007
- Author(s)
  S. Dissanayake, S. Sugahara, M. Takenaka and S. Takagi
- Organizer
  2nd International Conference on Industrial and Information Systems(ICIIS 2007)
- Place of Presentation
  University of Peradeniya, Sri Lanka
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 233-234
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] (110)Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara and S. Takagi
- Organizer
  5th international Conference on SiGe(C)Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-22
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007
- Author(s)
  S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
- Organizer
  34th International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced MOS Device Technologies in Nano-CMOS era (plenary talk)2007
- Author(s)
  S. Takagi
- Organizer
  Device Research Conference(DRC)
- Place of Presentation
  South Bend, USA
- Year and Date
  2007-06-20
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced CMOS Technology (invited)2007
- Author(s)
  S. Takagi
- Organizer
  SEMICON KOREA Semi Technology Symposium (STS) 2007
- Place of Presentation
  Souel, Korea(invited)
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Carrier-Transport-Enhanced CMOS using New Channel Materials and Structures (invited)2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, K. Usuda, N. Hirashita, M. Takenaka and N. Sugiyama
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  Maryland, USA
- Year and Date
  2007-12-13
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structure and Application to pMOSFET Devices2007
- Author(s)
  S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  2nd International Conference on Industrial and Information Systems (ICIIS 2007)
- Place of Presentation
  Sri Lanka
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method2007
- Author(s)
  H. Matsubara, H. Kumagai, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  Ext. Abs. SSDM
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] (110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara, S. Takagi
- Organizer
  5th International Conference on SiGe(C) Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Understanding and Control of Ge MIS Interface Properties (invited)2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Harada, T. Yamamoto, N. Sugiyama, M. Nishikawa, H. Kumagai, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
- Organizer
  4th International Symposium on Advanced Gate Stack Technology
- Place of Presentation
  Dallas, USA
- Year and Date
  2007-09-27
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels (invited)2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, N. Hirashita, K. Usuda and N. Sugiyama
- Organizer
  ULSI Process Integration Symposium, 212thElectrochemical Society Meeting
- Place of Presentation
  Washington, DC., USA
- Year and Date
  2007-10-09
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs2007
- Author(s)
  O. Weber, T. Irisawa, T. Numata, M. Harada, N. Taoka, Y. Yamashita, T. Yamamoto, N. Sugiyama, M. Takenaka, S. Takagi
- Organizer
  International Electron Device Meeting
- Place of Presentation
  Washington DC., USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Gate Dielectric Formation and MIS Interface Characterization on Ge (invited)2007
- Author(s)
  S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
- Organizer
  15th Insulatring Films on Semiconductors (INFOS2007), pp. 2314-2319
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007
- Author(s)
  S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka, S. Sugahara
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Evaluation of SiO2/GeO2/Ge MlS Interface Properties by Low Temperature Conductance Method2007
- Author(s)
  H. Matsubara, H. Kumagai, S. Sugahara and M. Takenaka and S. Takagi
- Organizer
  International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced MOS Device Technologies in Nano-CMOS era (plenary talk)2007
- Author(s)
  S. Takagi
- Organizer
  Device Research Conference (DRC), pp. 5-8
- Place of Presentation
  South Bend, USA
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] (110) surface Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, H. Kumagai, Y. Shuto, S. Sugahara, S. Takagi
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  於北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Advanced CMOS technologies using high mobility channels based on column-IV materials (invited)2007
- Author(s)
  S. Takagi, T. Irisawa, T. Tezuka, T. Numata, N. Hirashita, K. Usuda, N. Sugiyama
- Organizer
  5th International Conference on SiGe(C) Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effects of Annealing on (110) GOI Layers Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  於北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance CMOS Device Technologies using New Channel Materials(invited)2007
- Author(s)
  S. Takagi
- Organizer
  International Workshop on Advanced Silicon-based Nano-devices
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] (110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007
- Author(s)
  S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara and S. Takagi
- Organizer
  5th International Conference on SiGe(C) Epitaxy and Heterostructures, pp. 57-58
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance CMOS Device Technologies using New Channel Materials (invited)2007
- Author(s)
  S. Takagi
- Organizer
  International Workshop on Advanced Silicon-based Nano-devices
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Prospects and Critical Issues on Ge MOS Technologies (invited)2006
- Author(s)
  S. Takagi, N. Taoka, S. Nakaharai, K. Ikeda, T. Tezuka, Y. Yamashita, Y. Moriyama, T. Maeda, N. Sugiyama
- Organizer
  SiGe & Ge: Materials, Processing, and Devices Symposium, the 2006 Joint International Electrochemical Society Meeting
- Place of Presentation
  Moon Palace Resort, Cancun, Mexico(invited)
- Year and Date
  2006-10-29
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels (invited)2006
- Author(s)
  S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, K. Ikeda, N. Taoka, Y. Yamashita, M. Harada, T. Maeda, T. Yamamoto, N. Sugiyama
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] High Performance CMOS Device Technologies in Nano CMOS Era (invited)2006
- Author(s)
  S. Takagi
- Organizer
  IEEE Nanotechnology Materials and Devices Conference (NMDC)
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth2006
- Author(s)
  T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
- Organizer
  Ext. Abs. SSDM
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Metal Source/Drain Ge MOSFET Technologies (invited)2006
- Author(s)
  S. Takagi, K. Ikeda, T. Maeda, S. Nakaharai, N. Sugiyama, T. Uehara, S. Sugahara
- Organizer
  Workshop on Gate Stack and Contact Engineering for sub-30nm FETs
- Place of Presentation
  Monterey Plaza Hotel, Monterey CA, USA
- Year and Date
  2006-09-05
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] 高性能LSIのための新構造CMOSデバイス技術2006
- Author(s)
  高木信一
- Organizer
  ISTF(Industry Strategy and Technology Forum)2006
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2006-10-11
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge2006
- Author(s)
  H. Kumagai, M. Shichijo, H. Ishikawa, T. Hoshii, S. Sugahara, Y. Uchida, S. Takagi
- Organizer
  Ext. Abs. SSDM
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structures2006
- Author(s)
  Sanjeewa Dissanayake, 熊谷寛, 菅原聡, 高木信一
- Organizer
  2006秋応物第67回応用物理学会学術講演会
- Place of Presentation
  於立命館大学
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates
- Author(s)
  X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
- Organizer
  Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
- Place of Presentation
  Aula Prodi, Bologna, Italy
- Year and Date
  2015-01-26 – 2015-01-28
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Gate stack technologies for high mobility channel MOSFETs
- Author(s)
  S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
- Organizer
  2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory”
- Place of Presentation
  Moscone West Convention Center, San Francisco, USA
- Year and Date
  2015-04-06 – 2015-04-10
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Properties of ultrathin body condensation GOI films thinned by additional thermal oxidation
- Author(s)
  W.-K. Kim, M. Takenka and S. Takagi
- Organizer
  46th International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  7th International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Swissotel Merchant Court, Singapore, Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Electrical Properties of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique
- Author(s)
  S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
- Organizer
  2008年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-18063005
[Presentation] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates
- Author(s)
  X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates
- Author(s)
  X. Yu, R. Zhang, J. Kang, T. Osada, M. Hata, M. Takenaka and S. Takagi
- Organizer
  21st International Symposium on VLSI Technology, Systems and Applications (2014 VLSI-TSA)
- Place of Presentation
  Ambassador Hotel, Hsinchu, Taiwan
- Year and Date
  2014-04-28 – 2014-04-30
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET
- Author(s)
  張睿、岩崎敬志、田岡紀之、竹中充、高木信一
- Organizer
  応用物理学会シリコンテクノロジー分科会第139回研究集会「VLSIシンポジウム特集（先端CMOSデバイス・プロセス技術）」
- Place of Presentation
  東京
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
- Author(s)
  K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
- Organizer
  46th International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  つくば国際会議場（茨城県つくば市）
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] Material Challenges and Opportunities in Ge/III-V channel MOSFETs
- Author(s)
  S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang and M. Takenaka
- Organizer
  226th Fall meeting of the Electrochemical Society, P3 - High Purity and High Mobility Semiconductors 13
- Place of Presentation
  Moon Palace Resort, Cancun, Mexico
- Year and Date
  2014-10-05 – 2014-10-10
- Invited
- Data Source
  KAKENHI-PROJECT-26249038
[Presentation] III-V/Ge Channel MOS Device Technologies in Nano CMOS era
- Author(s)
  S. Takagi and M. Takenaka
- Organizer
  27th International Microprocesses and Nanotechnology Conference (MNC)
- Place of Presentation
  ヒルトン福岡シーホーク（福岡県福岡市）
- Year and Date
  2014-11-04 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-26249038

1. TAKENAKA Mitsuru (20451792)

# of Collaborated Projects: 6 results

# of Collaborated Products: 262 results
2. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
3. MIYAZAKI Seiichi (70190759)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. MASU Kazuya (20157192)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. HORI Masaru (80242824)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. TABATA Hitoshi (00263319)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. HIRAMOTO Toshiro (20192718)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. KHAIRUL Alam

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
9. SUGAHARA Satoshi (40282842)

# of Collaborated Projects: 1 results

# of Collaborated Products: 50 results
10. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. TANAKA Nobuo (40126876)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. TAKEUCHI Wakana (90569386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
14. 前田辰郎 (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
15. 入沢寿史 (40759940)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ALAM Khairul

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
17. HUANG PO-CHIN

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
18. トープラサートポンカシディット

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
19. KE MENGNAN

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
20. JO KWANGWON

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

Takagi Shinichi 高木 信一

TAKAGI Shinichi 高木 信一

Research Projects

Research Products

Co-Researchers

Understanding carrier transport properties of ultra-thin semiconductor channel CMOS and establishing a method to enhance channel mobilityPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transferPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

3次元集積Ge/III-V CMOSに向けた素子技術基盤の構築Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

スティープスロープＭＯＳトランジスタに最適なＭＯＳゲートスタック構造に関する研究Host Researcher

Host Researcher

Project Period (FY)

Research Category

Research Field

Research Institution

Understanding of carrier transport properties of Ge-On-Insulator CMOS and establishment of performance enhancement engineeringPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

高移動度チャネルＭＯＳＦＥＴのキャリア輸送と素子構造に関する理論的研究Host Researcher

Host Researcher

Project Period (FY)

Research Category

Research Field

Research Institution

Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Understanding of mechanisms dominating inversion-layer mobility in strained-Si MOSFETs and establishment of guideline for the mobility enhancementPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Nano-structure functional devices based Ge-based channelsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Technology Evolution for Silicon Nano-Electronics

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on physical models for understanding the properties of strained-Si MOS TransistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Takagi Shinichi 高木信一

TAKAGI Shinichi 高木信一

[Book] 2. III-V/Ge デバイス構造”, 先端LSI技術大系（GNC Tech. Vol. 2）、第3章　将来技術2012

[Book] 2. III-V/Ge デバイス構造, 先端LSI 技術大系(GNC Tech. Vol.2)、第3章将来技術2012