Nakayama Takashi 中山隆史

… Alternative Names

NAKAYAMA Takashi 中山隆史

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Researcher Number	70189075
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External Links
Affiliation (Current)	2022: 千葉大学, 大学院理学研究院, 教授
Affiliation (based on the past Project Information) *help	2017 – 2021: 千葉大学, 大学院理学研究院, 教授 2016 – 2017: 千葉大学, 大学院理学研究科, 教授 2011 – 2015: 千葉大学, 理学(系)研究科(研究院), 教授 2014: 千葉大学, 理学研究科, 教授 2007 – 2010: Chiba University, Graduate School of Science, Professor … More 2007 – 2010: 千葉大学, 理学系研究科, 教授 2000 – 2009: Chiba University, Faculty of Science, Professor, 理学部, 教授 2003: Chiba University, Faculty of Science, Professor, 理学部, 助教授 1995 – 1999: 千葉大学, 理学部, 助教授 1998: Chiba University, Department of Physics, Associate Professor, Dr., 理学部, 助教授 1988 – 1995: 千葉大学, 理学部, 助手 Less
Review Section/Research Field	Principal Investigator Condensed matter physics I / 固体物性Ⅰ(光物性・半導体・誘電体) / Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related Except Principal Investigator 物性一般(含基礎論) / 固体物性Ⅰ(光物性・半導体・誘電体) / Science and Engineering / 物性一般（含極低温･固体物性に対する理論） / Thin film/Surface and interfacial physical properties / Condensed matter physics I / Electron device/Electronic equipment / 固体物性Ⅱ(磁性・金属・低温) / Mathematical physics/Fundamental condensed matter physics / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 第一原理計算 / 電子構造 / ショットキーバリア / 原子空孔 / 混晶化 / 金属クラスター / 光学スペクトル / 界面 / シリサイド / 拡散 … More / 有機半導体 / 金属/半導体界面 / クラスター / 結晶成長 / 反射率差スペクトル / ダングリングボンド / 電子状態 / electronic structure / アンチサイト / 積層欠陥 / 空孔 / 転位 / first-principles calculation / dislocation / ギャップ状態 / 表面・界面物性 / 物性理論 / 計算物理 / 半導体物性 / 亜鉛化合物半導体 / 半導体超格子 / 歪構造 / バンドオフセット / II-VI族半導体超格子 / 歪超格子 / 混晶半導体 / 励起子構造 / ド-ピング / 発光スペクトル / 局在化 / 電荷中性準位 / 偏析 / ドーピング / 界面欠陷 / 強結合モデル / 格子間原子 / 界面構造 / 界面偏析 / InN界面 / オリゴアセン / 析出 / 界面ボンド混成 / 界面ボンド分極 / 金属／半導体界面 / 原子拡散 / 構造安定性 / 界面欠陥 / 金属誘起ギャップ状態 / 混晶過程 / 有機分子半導体 / 偏析界面層 / 電場下イオン化 / 界面制御 / 化合物化 / 有機分子固体 / 巨大歪環境 / 電場環境 / イオン結合 / 共有結合 / 不純物欠陥 / 原子間相互作用 / 不純物分布 / 吸着構造 / 励起子散乱 / 欠陥準位 / 相互作用 / 不純物散乱 / キャリア伝導 / PTCDA / ペンタセン / 次元依存性 / パイエルス転移 / 半導体表面 / 再構成表面 / 吸着表面 / 光学遷移 / GaAs表面 / 光学変遷 / 再構成構造 / ダイマー状態 / 異族半導体界面 / 局所場効果 / crystal growth / surface / interface / reflectance difference spectra / reconstruction / adsorption / dangling bond / optical transition / 結晶成長シミュレーション / ヘテロバレント界面 / 空孔欠陥 / 光学異方性 / モンテカルロシミュレーション / 層状酸化 / エッチング / ダイクロライド / ダイマー / 価電子不整 / バンドベンティング / 空孔配列 / ヘテロエピ成長 / 初期成長層 / (110)表面・界面 / first principles calculation / vacancy defect / crystal growth simulation / antisite / stacking faults / heterovalent interface / optical anisotropy / エピタキシャル成長 / 積層欠陥四面体 / 分子動力学 / 欠陥芯構造 / 表面極性反転 / 極性反転 / 界面形成 / シリコン / 窒化物半導体 / 積層欠陥芯 / ドーム構造 / 熱消滅 / モンテカルロ・シミュレーション / ヘテロエピタキシー / 電荷不整 / 融解消滅 / epitaxial growth / stacking-fault tetrahedron / molecular dynamics / defect core structure / interface mixing / surface-polarity conversion / 光学応答関数 / 非局所応答 / 表面界面 / 界面分極 / アミノ酸 / 電荷移動ダイナミクス / 生体アミノ酸 / ファンデアワールス結合 / 電荷中性理論 / 過渡電流 / 量子摩擦 / 垂直分極 / 光学応答スペクトル / 誘電関数 / スペクトルの消滅 / 光励起イオン化 / 荷電表面 / 偏光 / optical response function / nonlocal response / surface and interface / interface polarization / amino acid / charge transfer dynamics / 金属／固体界面 / 電場環境下 / イオン化 / 侵入拡散 / 金属イオン / 点欠陥 / 金属電極 / 絶縁・半導体 / 有機固体 / ドーパント / ワイドギャップ半導体 / 二酸化ケイ素 / イオン価数 / イオン拡散 / 量子井戸 / pn接合界面 / 酸素空孔 / 半導体粒界 / トンネル電流 / 直接・間接ギャップ半導体 … More Except Principal Investigator 第一原理計算 / 反強磁性体 / 理論 / 半導体量子構造 / 超格子 / バンド構造 / 量子スピン系 / ラマン散乱 / 量子効果 / 半導体 / レ-ザ / 電子状態 / 量子反強磁性 / スピン波 / 低次元系 / 三角格子 / ナノサイエンス / 界面 / 半導体デバイス / ナノ物性 / ナノデバイス / 半導体超格子 / 高温超伝導 / 交換散乱機構 / スピンギャップ / 分子線エピタキシ / 有機金属分子線エピタキシ / ホットウォ-ルエピタキシ / 原子層エピタキシ / 正方格子 / 量子ゆらぎ / フリップ・フロップ数 / RVB / ハイゼンベルク型交換相互作用 / 基底状態 / レーザ / 第一原理的分子動力学法 / 超ソフト擬ポテンシャル法 / フルポテンシャルKKR法 / 光学非線型感受率 / 稀土類鉄化合物 / 表面原子操作 / 吸着構造 / 自己相互作用補正 / 強磁性ニッケル / アルカリ吸着 / 圧力誘起構造相転移 / 格子緩和 / エネルギー勾配法 / シリサイド / 擬ポテンシャル法 / ボゴリューボフ変換 / スピンの縮み / 反強磁性相関 / スピン系 / マグノン / 磁気異方性 / ナノ界面 / 新材料 / MOSトランジスタ / 炭素ナノチューブ / 将来デバイス / 酸化物 / 金属 / 界面反応 / 絶縁体 / 界面準位 / 量子ポイントコンタクト / スピン生成 / スピン操作 / 走査ゲート顕微法 / 結合量子ポイントコンタクト / 局在磁気モーメント(LMM) / 近藤効果 / マイクロ波パルス伝導 / 量子ポイントコンタクト(QPC) / 走査ゲート顕微法(SGM) / マイクロ派パルス伝導 / 走査プローブ顕微鏡 / 局在スピン / 集積回路 / シリコン結晶シリコンデバイス / 不純物ドープ / 表面科学 / 電子物性 / 電子デバイス / 電子輸送 / シリコン / ひずみ / 移動度 / ナノ電子物性科学 / シリコン結晶 / シリコンデバイス / 第一原理分子動力学法 / 熱伝導 / 非平衡ダイナミクス / 電極反応 / 原子間力モデル / モデリング / 分子動力学法 / スピン動力学 / コンピュータ / シミュレーション / スピングラス / 動的応答 / 磁気共鳴 / 酸化物超伝導体 / 日英共同研究 / 超強磁場 / 磁気光学 / 磁気輸送現象 / 量子ホール効果 / 総括会議 / メソスコピック系 / EPSRC-MONBUSHO / COLLABOTRATION PROGRAMME / LDSD / Semiconductors / Superconductors / New Quantum Phenomena / Mega-gauss Lab. / Friendship / N+N Meeting / 電子励起 / 欠陥反応 / 準安定構造 / 非平衡物質 / 構造変化 / 緩和ダイナミックス / 不純物・欠陥 / electronic excitation / defect reaction / metastable structure / non-equilibrium material / structural change / relaxation dynamics / first-principle calculation / impurity defect / 束縛励起子 / 強磁場 / 光学特性 / 銅酸化物高温超伝導体 / 多電子状態 / 反強磁性秩序 / YBCO / 超伝導状態 / 多重量子井戸構造 / 励起子 / ガリウム燐 / アルミニウム燐 / アルカリハライド超格子 / 膜厚依存性 / first principles / bound exciton / semiconductor superlattices / strong magnetic field / optical properties / copper oxides / many-electreon states / antiferro magnetic order / 高圧下磁性 / 軌道整列 / 化物磁性体 / 塩化物磁性体 / 弗化物磁性体 / 反強磁性的軌道整列 / 強磁性的軌道整列 / 高圧 / 磁化率 / orbital ordering / fluoride compound / chloride compound / high pressure / 希薄磁性半導体量子井戸 / 界面磁化 / 励起子磁気ポーラロン / 高圧強磁場 / 励起子分子 / 荷電励起子 / 励起子分岐 / スピン / 縮退四光波混合 / スピン緩和 / Diluted magnetic semiconductor quantum structures / Interface magnetism / Exciton magnetic polaron / High pressure and high magnetic field / Biexciton / Charged exciton / Exciton bifurcation / Spin polarization / 磁気ラマン散乱 / はしご格子 / 量子スピン / 数値対角化計算 / 摂動論 / 梯子構造反強磁性体 / シングレット基底状態 / トリプレット対の励起 / EXCHANGE SCATTERING / MAGNETIC RAMAN SPECTRA / SINGLET GRIND STATE / QUANTUM ANTIFERROMAGNETS / LADDER HEISENBERG SYSTEM / TRIPLET DIMERS / REPRODUCTION OF SPECTRA / EXACT DIAGONALIZATION / 磁気ラマンスペクトル / ヤーンテラー効果 / 量子カオス / ボース凝縮体 / シングレット基底 / 交換散乱スペクトル / ヤーンテラー歪 / ボース凝縮 / スピンギギャップ / シングレツト対 / 数値対角化 / 低エネルギー励起 / Antiferromagnets / Exchange-Scattering Spectra / Jahn-Teller Distortion / Quantum Chaos / Bose-Condensation / Singlet Ground State / Spin Wave / Spin Gap / シリセン / ゲルマネン / スタネン / 二次元物質 / 物質創製 / エッジ状態 / 物質設計 / 物質合成 / タイトバインディング近似 / スピン軌道相互作用 / ナノリボン / IV族元素 / 多軌道タイトバインディング法 Less

Theory of gap states at metal/semiconductor interfaces; annihilation mechanism and deformation in electric fieldsPrincipal Investigator
- Principal Investigator
  
  中山隆史
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
- Research Institution
  Chiba University
Theory of metal-atom ionization and diffusion around metal/solid interfaces in electric fieldsPrincipal Investigator
- Principal Investigator
  
  Nakayama Takashi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Synthesis of New Group IV Two Dimensional Materials
- Principal Investigator
  
  Shiraishi Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Theory of impurity-atom defects in organic semiconductors based on by the first-principles calculationsPrincipal Investigator
- Principal Investigator
  
  Nakayama Takashi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systemsPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Studies on Structure Sampling and Non-Equilibrium Dynamics Using Ab-Initio Molecular Dynamics Methods
- Principal Investigator
  
  TSUNEYUKI Shinji
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
New Schottky-barrier theory responding to interface structuresPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Electron Spin Observation and Controlling in Quantum Point Contacts
- Principal Investigator
  
  OCHIAI Yuichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
New development of the theories of nano-interfaces and their application to nano-devices
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
First-principles nonlocal optical response theory of semiconductor surfaces and interfaces with vertical polarizationPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Chiba University
Calculation of Raman Spectra in Quantum Antiferromagnetic Systems containing Spin Gaps
- Principal Investigator
  
  NATSUME Yuhei
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Mathematical physics/Fundamental condensed matter physics
- Research Institution
  Chiba University
First-principles theoretical study on formation dynamics, defect structures, and electronic structures of interface stacking faults during epitaxial growthPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Chiba University
CALCULATION OF LIGHT SCATTERING SPECTRA RELATED TO LOW-ENERGY EXCITATION IN LOW-DIMENSIONAL QUANTUM ANTIFERROMAGENTICS SYSTEMS
- Principal Investigator
  
  NATSUME Yuhei
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  物性一般(含基礎論)
- Research Institution
  CHIBA UNIVERSITY
Photon spin charge texture in nano-semiconductor physics
- Principal Investigator
  
  TAKEYAMA Shojiro
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Chiba University
First principles calculation of growth dynamics and electronic properties of heterovalent burried-vacancy interfacesPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Chiba University
低次元量子反強磁性系の磁気的低エネルギー励起とその光学的性質に関する理論計算
- Principal Investigator
  
  夏目雄平
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  物性一般(含基礎論)
- Research Institution
  Chiba University
ELECTRONIC STATES OF (GaP)m(AlP)n SHORT PERIOD SUPERLATTICES AND MULTI-QUANTUM WELL STRUCTURES AND THE MECHANISM OF PHOTOLUMINESCENCE
- Principal Investigator
  
  KAMIMURA Hiroshi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  SCIENCE UNIVERSITY OF TOKYO
Orbital ordering and magnetism of fluoride and chloride compounds at high pressures
- Principal Investigator
  
  YAMADA Isao
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  固体物性Ⅱ(磁性・金属・低温)
- Research Institution
  Chiba University
First principles calculation of optical spectra of GaAs growing surface structuresPrincipal Investigator
- Principal Investigator
  
  NAKAYAMA Takashi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Chiba University
量子性の強い低次元反強磁性体のマグノン励起とそのラマン散乱に関する理論と数値計算
- Principal Investigator
  
  夏目雄平
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  物性一般(含基礎論)
- Research Institution
  Chiba University
Theoretical Study of Novel Structures of Materials by Electronic Excitation and Unified Model
- Principal Investigator
  
  SHINOZUKA Yuzo
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Yamaguchi University
II-VI族混晶半導体歪超格子における青色発光スペクトルの機構に関する理論的研究Principal Investigator
- Principal Investigator
  
  中山隆史
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Chiba University
Low Dimensional Structures and Devices
- Principal Investigator
  
  KAMIMURA Hiroshi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  Science University of Tokyo
計算物理学-物性研究における新展開-A01第一原理からの物性予測
- Principal Investigator
  
  塚田捷
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
半導体量子構造の作製と新物性に関する研究
- Principal Investigator
  
  藤田茂夫
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
半導体量子構造の作製と新物性に関する研究
- Principal Investigator
  
  藤田茂夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
量子反強磁性正方格子基底状態の拡張型RVB描像とド-ブされたホ-ルの振舞の表現
- Principal Investigator
  
  NATSUME Yuhei
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  物性一般（含極低温･固体物性に対する理論）
- Research Institution
  Chiba University
半導体量子構造の作製と新物性に関する研究
- Principal Investigator
  
  藤田茂夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kyoto University
II-VI族化合物半導体超格子の電子構造と光学的性質の研究Principal Investigator
- Principal Investigator
  
  中山隆史
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
短距離相互作用スピングラス状態の動的応答現象に関する計算機シミュレーション
- Principal Investigator
  
  夏目雄平
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Institution
  Chiba University

[Book] Electronic processes in organic electronics: Bridging nanostructure, electronic states and device properties2015
- Author(s)
  Y. Tomita, T. Nakayama
- Total Pages
  427
- Publisher
  Springer Japan
- Data Source
  KAKENHI-PROJECT-26400310
[Book] 次世代結晶性半導体におけるナノ成膜ダイナミックスと界面量子効果2013
- Author(s)
  中山隆史
- Publisher
  (株)NTS出版
- Data Source
  KAKENHI-PROJECT-23540361
[Book] "計算科学に基づく半導体ナノ界面構造と電子物性の評価", 「ポストシリコン半導体-ナノ成膜ダイナミックスと基板・界面効果」4編1章2節2013
- Author(s)
  中山隆史, 小日向恭祐
- Publisher
  (株)NTS出版
- Data Source
  KAKENHI-PROJECT-23540361
[Book] ポストシリコン半導体 --ナノ成膜ダイナミクスと基板・界面効果-- 第4編1章2節2013
- Author(s)
  中山隆史、小日向恭祐
- Total Pages
  10
- Publisher
  NTS出版
- Data Source
  KAKENHI-PROJECT-23540361
[Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011
- Author(s)
  T.Nakayama, Y.Kangawa, K.Shiraishi
- Publisher
  Elsevier B.V.
- Data Source
  KAKENHI-PROJECT-19206037
[Book] Atomic Structures and Electronic Properties of Semiconductor Interfaces, in "Comprehensive Semiconductor Science and Technology"2011
- Author(s)
  T.Nakayama
- Publisher
  Elsevier B.V., Amsterdam
- Data Source
  KAKENHI-PROJECT-19206037
[Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya Section 1.12)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011
- Author(s)
  T.Nakayama, Y.Kangawa, K.Shiraishi
- Publisher
  Elsevier B.V., Amsterdam
- Data Source
  KAKENHI-PROJECT-20540310
[Book] Comprehensive Semiconductor Science and Technology (Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011
- Author(s)
  T.Nakayama
- Publisher
  Elsevier B.V, Amsterdam
- Data Source
  KAKENHI-PROJECT-20540310
[Book] "Atomic Structures and Electronic Properties of Semiconductor Interfaces", in "Comprehensive Semiconductor Science and Technology", Eds. Mahajan, Kamimura, and Bhattacharya2011
- Author(s)
  T. Nakayama, Y. Kangawa, K. Shiraishi
- Publisher
  Elsevier B.V.
- Data Source
  KAKENHI-PROJECT-23540361
[Book] Comprehensive Semiconductor Science and Technology2011
- Author(s)
  T. Nakayama
- Publisher
  Elsevier B.V., Amsterdam
- Data Source
  KAKENHI-PROJECT-23540361
[Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu)(Role of computational science in Si nanotechnologies and devices)2010
- Author(s)
  K.Shiraishi, T.Nakayama
- Publisher
  Oxford University Press
- Data Source
  KAKENHI-PROJECT-19206037
[Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu, Vol.III)(Role of computational science in Si nanotechnologies and devices)2010
- Author(s)
  K.Shiraishi, T.Nakayama
- Publisher
  Oxford University Press
- Data Source
  KAKENHI-PROJECT-20540310
[Book] 物理学ハンドブック(章:量子物性-代表物質のバンド構造-)2006
- Author(s)
  中山隆史(分担執筆)
- Publisher
  朝倉書店
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Book] 「表面・界面工学大系基礎編」第8章第1節界面の電子状態2005
- Author(s)
  中山隆史(本多健一他編)
- Publisher
  フジ・テクノシステム社
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Clustering feature of metal atoms in pentacene molecular solids: a first-principles study2022
- Author(s)
  S. Watanabe, Y. Tomita, K. Kawabata, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61
- DOI
  10.35848/1347-4065/ac41e2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K03815
[Journal Article] Effect of electron transfer on metal-atom penetration into SiO2 in electric field: First-principles study2021
- Author(s)
  R. Nagasawa, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 60
- DOI
  10.35848/1347-4065/abe0f4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K03815
[Journal Article] New types of resonant tunneling currents at Si-p/n junctions: One-dimensional model calculation2021
- Author(s)
  S. Cho, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 60
- DOI
  10.35848/1347-4065/abf782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K03815
[Journal Article] Electronic structures and impurity segregation around extended defects in pentacene films: first-principles study2021
- Author(s)
  S. Watanabe, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 60
- DOI
  10.35848/1347-4065/abdf71
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K03815
[Journal Article] Impacts of terminal molecules on metal-atom diffusion into alkane self-assembled-monolayer films: first-principles study2021
- Author(s)
  S. Watanabe, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 60
- DOI
  10.35848/1347-4065/ac3181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K03815
[Journal Article] Theoretical studies on the switching mechanism of VMCO memories2019
- Author(s)
  T. Nakanishi, K. Chokawa, M. Araidai, T. Nakayama, K. Shiraishi
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 215
- DOI
  10.1016/j.mee.2019.110997
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Origin of Fermi-level depinning at TiN/Ge(001) interfaces: first-principles study2019
- Author(s)
  T. Nishimoto, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 6 Pages: 061007-061007
- DOI
  10.7567/1347-4065/ab1c6d
- NAID
  210000155856
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Resonance-enhanced tunneling current through Si-p/n junction with additional dopants: theoretical study2019
- Author(s)
  S. Cho, S. Iizuka, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 6 Pages: 061004-061004
- DOI
  10.7567/1347-4065/ab1717
- NAID
  210000155673
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study on effect of segregation2019
- Author(s)
  T. Nishimoto, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 印刷中
- NAID
  210000156461
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Effect of electric field on formation energies of point defects around metal/SiC and metal/GaN interfaces: first-principles study2019
- Author(s)
  R. Nagasawa, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 9 Pages: 091006-091006
- DOI
  10.7567/1347-4065/ab3839
- NAID
  210000156878
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Metal-atom penetration and diffusion in organic solids: difference between σ- and π- orbital molecular systems2019
- Author(s)
  S. Watanabe, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 印刷中
- NAID
  210000156689
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Structural and Charging Stability of Metal Nanodot Memory in SiO2; First-Principles Study2018
- Author(s)
  T. Nakayama, S. Yamazaki, Y. Shiraishi
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Pages: 69-75
- DOI
  10.1149/08602.0069ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] First-principles study of giant thermoelectric power in incommensurate TlInSe22018
- Author(s)
  Ishikawa M.、Nakayama T.、Wakita K.、Shim Y. G.、Mamedov N.
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 123
- DOI
  10.1063/1.5011337
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05993, KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-17K06357
[Journal Article] Acceleration of metal-atom diffusion in electric field at metal/insulator interfaces: First-principles study2018
- Author(s)
  R.Nagasawa, Y.Asayama, T.Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FB05-04FB05
- DOI
  10.7567/jjap.57.04fb05
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Physics of Fermi-Level "Unpinning" at Metal/Ge Interfaces; First-Principles View2018
- Author(s)
  T. Nakayama, T. Nishimoto
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Pages: 291-298
- DOI
  10.1149/08607.0291ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology2017
- Author(s)
  T. Mori, S. Iizuka, T. Nakayama
- Journal Title
  
  MRS Communications
  
  Volume: 7 Pages: 541-550
- DOI
  10.1557/mrc.2017.63
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-15H05526
[Journal Article] Metal-atom interactions and clustering in organic semiconductor systems2017
- Author(s)
  Y. Tomita, T. Park, T. Nakayama
- Journal Title
  
  J. Electronic Materials
  
  Volume: 印刷中
- DOI
  10.1007/s11664-016-5090-4
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Ionization and diffusion of metal atoms under electric field at metal/insulator interfaces; First-principles study2017
- Author(s)
  Y. Asayama, M. Hiyama, T. Nakayama
- Journal Title
  
  Materials Science in Semiconductor Processng
  
  Volume: 印刷中
- DOI
  10.1016/j.mssp.2016.09.010
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Metal-atom Ionization and Diffusion under Electric Field around Metal/insulator Interfaces; First-principles View (invited paper)2017
- Author(s)
  T. Nakayama, Y. Asayama, R. Nagasawa
- Journal Title
  
  ECS Transactions
  
  Volume: 80 Pages: 285-293
- DOI
  10.1149/08001.0285ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05488
[Journal Article] Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study2017
- Author(s)
  S.Iizuka, Y.Asayama, T.Nakayama
- Journal Title
  
  Mater. Sci. Semicond. Processing
  
  Volume: 印刷中
- DOI
  10.1016/j.mssp.2016.11.031
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Defect distribution and Schottky barrier at metal/Ge interfaces: Role of metal-induced gap states2016
- Author(s)
  S. Sasaki, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 11 Pages: 111302-111302
- DOI
  10.7567/jjap.55.111302
- NAID
  210000147222
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Quantum process of exciton dissociation at organic semiconductor interfaces: Effects of interface roughness and hot exciton2016
- Author(s)
  H. Iizuka, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 2 Pages: 021601-021601
- DOI
  10.7567/jjap.55.021601
- NAID
  210000146019
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Fundamental processes of exciton scattering at organic solar-cell interfaces: One-dimensional model calculation2016
- Author(s)
  Y. Masugata, H. Iizuka, K. Sato, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 8 Pages: 081601-081601
- DOI
  10.7567/jjap.55.081601
- NAID
  210000146929
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Physics of Metal/Ge Interfaces; Interface Defects and Fermi-Level Depinning2016
- Author(s)
  T. Nakayama, S. Sasaki, Y. Asayama
- Journal Title
  
  ECS trans
  
  Volume: 75 Pages: 643-650
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Stability and electronic structures of isoelectronic impurity complexes in Si: First-principles study2016
- Author(s)
  S. Iizuka, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 10 Pages: 101301-101301
- DOI
  10.7567/jjap.55.101301
- NAID
  210000147118
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] Tunneling desorption of atomic hydrogen on the surface of titanium dioxide2015
- Author(s)
  T. Minato, S. Kajita, C-L. Pang, N. Asao, Y. Yamamoto, T. Nakayama, M. Kawai, and Y. Kim
- Journal Title
  
  ACS Nano
  
  Volume: 9 Pages: 6837-6842
- DOI
  10.1021/acsnano.5b01607
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310, KAKENHI-PROJECT-15H02025, KAKENHI-PROJECT-25286012
[Journal Article] First-principles calculation of electronic properties of isoelectronic impurity complexes in Si2015
- Author(s)
  S. Iizuka, T. Nakayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 8 Pages: 081301-081301
- DOI
  10.7567/apex.8.081301
- NAID
  210000137599
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] First-principles study of doping properties in ZnSnAs22015
- Author(s)
  M. Ishikawa, T. Nakayama
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 印刷中
- DOI
  10.1002/pssc.201400277
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26400310
[Journal Article] First-principles study of Schottky barrier behavior at Fe<sub>3</sub>Si/Ge(111) interfaces2014
- Author(s)
  K. Kobinata, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3 Pages: 035701-035701
- DOI
  10.7567/jjap.53.035701
- NAID
  210000143441
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014
- Author(s)
  T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5 Pages: 058006-058006
- DOI
  10.7567/jjap.53.058006
- NAID
  210000143765
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Firstprinciples theoretical study of optical properties of oxegen-doped II-VI semiconductors2014
- Author(s)
  M. Ishikawa, T. Nakayama
- Journal Title
  
  Physica Stat. Sol. C
  
  Volume: 印刷中
- DOI
  10.1002/pssc.201300557
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Firstprinciples study of Pt-film stability on doped graphene sheets2014
- Author(s)
  T. Park, Y. Tomita, T. Nakayama
- Journal Title
  
  Surf. Sci
  
  Volume: 621 Pages: 7-15
- DOI
  10.1016/j.susc.2013.10.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014
- Author(s)
  T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 印刷中
- NAID
  210000143765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors : An Ab Initio-Based Approach2013
- Author(s)
  Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
- Journal Title
  
  Materials
  
  Volume: 6 Pages: 3309-3360
- DOI
  10.3390/ma6083309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361, KAKENHI-PROJECT-24560025
[Journal Article] First-principles study of oxygen-doping states in II-VI semiconductors2013
- Author(s)
  M. Ishikawa, T. Nakayama
- Journal Title
  
  Physica Stat. Sol
  
  Pages: 1385-1388
- DOI
  10.1002/pssc.201300249
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon2013
- Author(s)
  M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
- Journal Title
  
  J. Appl. Phys
  
  Volume: 114
- DOI
  10.1063/1.4817432
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2012
- Author(s)
  T. Nakayama
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Pages: 3374-3378
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] First-principles Calculations of Metal-atom Diffusion in Oligoacene Molecular Semiconductor Systems2012
- Author(s)
  Y. Tomita, T. Nakayama
- Journal Title
  
  Organic Electr
  
  Volume: 13 Pages: 1487-1498
- DOI
  10.1016/j.orgel.2012.04.019
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Optical Response Spectra of Surfaces and Interfaces2012
- Author(s)
  T. Nakayama, K. Kobinata
- Journal Title
  
  J. Vac. Soc. Jpn.
  
  Volume: 520 Issue: 10 Pages: 3374-3378
- DOI
  10.3131/jvsj2.54.529
- NAID
  130002116993
- ISSN
  1882-2398, 1882-4749
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Theoretical study of Si-based ionic switch2012
- Author(s)
  T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 100
- DOI
  10.1063/1.4718758
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] 表面界面の光学応答スペクトル2011
- Author(s)
  中山隆史
- Journal Title
  
  真空
  
  Volume: 54 Pages: 529-536
- NAID
  10029840009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] N-doping induced band-gap reduction in III-V semiconductors : First-principles calculations2011
- Author(s)
  M. Ishikawa, T. Nakayama
- Journal Title
  
  Phys. Stat. Sol. C
  
  Volume: 8 Pages: 352-355
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Optical Response Spectra of Surfaces and Interfaces2011
- Author(s)
  T. Nakayama
- Journal Title
  
  J. Vac.Soc.Jpn
  
  Volume: 54 Pages: 529-536
- DOI
  10.1016/j.tsf.2011.10.091
- NAID
  10029840009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361
[Journal Article] Firstprinciples study on Nitrogen-induced band-gap reduction in III-V semi conductors2010
- Author(s)
  M.Ishikawa, T.Nakayama
- Journal Title
  
  Physics Procedia 3
  
  Pages: 1363-1366
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First Principles Study2010
- Author(s)
  T.Nakayama, Y.Maruta, K.Kobinara
- Journal Title
  
  ECS Trans 33
  
  Pages: 913-919
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010
- Author(s)
  T.Nakayama
- Journal Title
  
  ECS Transaction
  
  Volume: 33 Pages: 913-919
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approx-imation2010
- Author(s)
  Y.Ono, K.Kusakabe, T.Nakayama
- Journal Title
  
  J.Phys.Soc.Jpn. 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Metal-Atom Diffusion in Organic Solids : First-Principles Study of Graphene and Polyacetylene Syatems2010
- Author(s)
  Y.Tomita, T.Nakayama
- Journal Title
  
  Appl.Phys.Express 3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010
- Author(s)
  T.Nakayama, Y.Maruta, K.Kobinara
- Journal Title
  
  ECS Trans Vol.33, No.10
  
  Pages: 1-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010
- Author(s)
  T.Nakayama
- Journal Title
  
  ECS Trans.
  
  Volume: 33 Pages: 913-919
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Stability and Schottky barrier of silicides: First-principles study2009
- Author(s)
  T.Nakayama, S.Sotome, S.Shinji
- Journal Title
  
  Micro electronics Eng. 86
  
  Pages: 1718-1721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Firstprinciples study on band-gap reduction in GaN/GaSb superlattices2009
- Author(s)
  M.Ishikawa, T.Nakayama
- Journal Title
  
  Micro electronics J 40
  
  Pages: 824-826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] First-principles Study of Schottky-Barrier Behavior at Metal/InN Interfaces2009
- Author(s)
  Y.Takei, T.Nakayama
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  40016704628
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Stability and Schottky barrier of silicides : First-principles study2009
- Author(s)
  T.Nakayama
- Journal Title
  
  Microelectronic Engineering 86
  
  Pages: 1718-1721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009
- Author(s)
  Y. Tomita, T. Nakayama, H. Ishii
- Journal Title
  
  e-J.Surf.Sci.Nanotech. Vol.7
  
  Pages: 606-616
- NAID
  130004439158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19204030
[Journal Article] Transient current behavior through molecular bridge systems; effects of intra-molecule current on quantum relaxation and oscillation2009
- Author(s)
  Y. Tomita, T. Nakayama, H. Ishii
- Journal Title
  
  e-J. Surf. Sci. Nanotech. 7
  
  Pages: 606-616
- NAID
  130004439158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Stability and Schottky barrier of silicides : Firstprinciples study2009
- Author(s)
  T.Nakayama, S.Sotome, S.Shinji
- Journal Title
  
  Microelectronic Engineering 86
  
  Pages: 1718-1721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009
- Author(s)
  Y.Tomita, T.Nakayama, H.Ishii
- Journal Title
  
  eJ.Surf.Sci.Nanotech. 7
  
  Pages: 606-616
- NAID
  130004439158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Electron carrier generation at edge dislocations in InN films; First-principles study2009
- Author(s)
  Y.Takei, T.Nakayama
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2767-2771
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Stability and Schottky barrier of silicides : First-principles study2009
- Author(s)
  T.Nakayama
- Journal Title
  
  Microelectronic Eng 86
  
  Pages: 1718-1721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Stability and Schottky barrier of silicides: First-principles study2009
- Author(s)
  T. Nakayama, S. Sotome, S. Shinji
- Journal Title
  
  Microelectronic Eng. 86
  
  Pages: 1718-1721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing2008
- Author(s)
  T. Nakayama
- Journal Title
  
  ECS Transaction 16
  
  Pages: 787-795
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Energy-level alignment, ionization, and stability of bio-amino acids at amino-acid/Si junctions2008
- Author(s)
  M.Oda, T.Nakayama
- Journal Title
  
  Jpn.J.Appl.Phys. 47
  
  Pages: 3712-3718
- NAID
  40016057275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008
- Author(s)
  H. Ishii, Y. Tomita, Y. Shigeno, T. Nakayama
- Journal Title
  
  e-J.Surf.Sci.Nanotech. Vol.6
  
  Pages: 213-221
- NAID
  130004933990
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19204030
[Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces ; Silicide Formation vs. Random Mixing2008
- Author(s)
  T.Nakayama, S.Shinji, S.Sotome
- Journal Title
  
  ECS Trans Vol.16, No.10(招待講演論文)
  
  Pages: 787-795
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008
- Author(s)
  H.Ishii, Y.Tomita, Y.Shigeno, T.Nakayama
- Journal Title
  
  eJ.Surf.Sci.Nanotech. 6
  
  Pages: 213-221
- NAID
  130004933990
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] 金属/絶縁体界面の統一理論2008
- Author(s)
  白石賢二、中山隆史
- Journal Title
  
  表面科学 29
  
  Pages: 92-98
- NAID
  10021165483
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Atomic and electronic structures of stair-rod dislocations in Si and GaAs2008
- Author(s)
  R.Kobayashi, T.Nakayama
- Journal Title
  
  Jpn.J.Appl.Phys. 47
  
  Pages: 4417-4421
- NAID
  40016110952
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20540310
[Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化2007
- Author(s)
  中山隆史、白石賢二
- Journal Title
  
  表面科学 28
  
  Pages: 28-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: first-principles study2007
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  phys. stat. sol. (c) 4
  
  Pages: 299-302
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子混晶化2007
- Author(s)
  中山隆史
- Journal Title
  
  表面科学 28
  
  Pages: 28-33
- NAID
  10018461516
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: first-principles study2007
- Author(s)
  T. Nakayama
- Journal Title
  
  phys. stat. sol. (c) 4
  
  Pages: 299-302
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Physics of metal/high-k interfaces: Schottky barriers and atom intermixing (in Japanese)2007
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  Hyoumenkagaku 28
  
  Pages: 28-33
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy : first-principles study2007
- Author(s)
  T.Nakayama
- Journal Title
  
  phys. stat. sol. (C) 4巻
  
  Pages: 299-302
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Handbook of Physics (Chapter Quantum properties -Band structures of representative materials-, in Japanese)2006
- Author(s)
  T. Nakayama, et. al. (partial contributor)
- Journal Title
  
  Asakura Publisher Tokyo
  
  Pages: 315-321
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T. Nakayama
- Journal Title
  
  J. Phys. Conf. Ser. 38
  
  Pages: 216-219
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures - Remarkable Advantages of La_2O_3 over HfO_2 -2006
- Author(s)
  K.Ohmori, P.Ahmet, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, N.Umezawa, K.Nakajima, M.Yoshitake, T.Nakayama, K.-S.Chang, K.Kakushima, Y.Nara, M.L.Green, H.Iwai, K.Yamada, T.Chikyow
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 351-351
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006
- Author(s)
  R.Kobayashi, T.Nakayama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 29-29
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T.Nakayama
- Journal Title
  
  J. Phys. Conf. Ser. 38巻
  
  Pages: 216-219
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T.Nakayama, S.Itaya, D.Murayama
- Journal Title
  
  J.Phys.Conf.Ser. 38
  
  Pages: 216-216
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces -2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T.Nakayama, S.Itaya, D.Murayama
- Journal Title
  
  J. Phys. Conf. Ser. 38
  
  Pages: 216-216
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T. Nakayama, S. Itaya, D. Murayama
- Journal Title
  
  J. Phys. Conf. Ser. 38
  
  Pages: 216-219
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Physics of Metal/High-k Interfaces2006
- Author(s)
  T.Nakayama, K.Shiraishi, S.Miyazaki, Y.Akasaka, T.Nakaoka, K.Torii, A.Ohta, P.Ahmet, K.Ohmori, N.Umezawa, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 129-129
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces-2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Physics of Metal/High-k interfaces2006
- Author(s)
  T.Nakayama
- Journal Title
  
  ECS transactions 3巻
  
  Pages: 129-140
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] THEORETICAL STUDIES ON THE PHYSICAL PROPERTIES OF POLY-SI AND METAL GATES/HfO_2 RELATED HIGH-K DIELECTRICS INTERFACES2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Yasuo Nara
- Journal Title
  
  ECS Transactions 1(5)
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Thernal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006
- Author(s)
  R.Kobayashi, T.Nakayama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 29-29
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Physics of Metal/High-k Interfaces2006
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  ECS transactions 3
  
  Pages: 129-140
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Physics of Metal/High-k Interfaces2006
- Author(s)
  T. Nakayama
- Journal Title
  
  ECS transactions 3
  
  Pages: 129-140
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006
- Author(s)
  R. Kobayashi, T. Nakayama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 29-32
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  J. Phys. Conf. Ser 38
  
  Pages: 216-219
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Electronic structures of natural quantum-dot system ; Si stacking-fault tetrahedron2005
- Author(s)
  T.Nakayama
- Journal Title
  
  phys.stat.sol.(c) 2巻
  
  Pages: 3125-3128
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Ultrathin metal layers to convert surface polarity of nitride semiconductors2005
- Author(s)
  T. Nakayama
- Journal Title
  
  phys. stat. sol. (b) 242
  
  Pages: 1209-1213
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Electronic structures of natural quantum-dot system; Si stacking-fault tetrahedron2005
- Author(s)
  T. Nakayama
- Journal Title
  
  phys. stat. sol. (c) 2
  
  Pages: 3125-3128
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Electronic structures of natural quantum-dot system; Si stacking-fault tetrahedron2005
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  phys. stat. sol. (c) 2
  
  Pages: 3125-3128
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Journal Article] Ultrathin metal layers to convert surface polarity of nitride semiconductors2005
- Author(s)
  T. Nakayama, et. al.
- Journal Title
  
  phys. stat. sol. (b) 242
  
  Pages: 1209-1213
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Patent] トンネル電流駆動素子(トンネル電界効果ラジスタ及びその製造方法）2022
- Inventor(s)
  加藤公彦, 森貴洋, 飯塚将太, 中山隆史, 趙祥勲
- Industrial Property Rights Holder
  加藤公彦, 森貴洋, 飯塚将太, 中山隆史, 趙祥勲
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-019819
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20K03815
[Patent] 半導体素子、半導体集積回路及び半導体素子の製造方法2021
- Inventor(s)
  加藤, 森, 飯塚, 中山隆史, 趙, 加藤
- Industrial Property Rights Holder
  加藤, 森, 飯塚, 中山隆史, 趙, 加藤
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-063816
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] ハライド混晶ペロブスカイトCsPb(I_xBr_(1-x))_3の安定性：第一原理計算による検討2022
- Author(s)
  冨田愛美, 中山隆史
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 酸素空孔の帯電が誘起する金属酸化物の構造変化：第一原理計算による検討2022
- Author(s)
  新井千慧, 中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] HfO2強誘電相の安定化：第一原理計算に基づく考察 (招待講演)2022
- Author(s)
  中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Invited
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 強誘電HfO2薄膜の安定性と誘電特性:第一原理計算による検討2022
- Author(s)
  牧芳和, 新井千慧, 洗平昌晃, 白石賢二, 中山隆史
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] HfO2薄膜の安定性と誘電特性:第一原理計算による検討2022
- Author(s)
  牧芳和, 新井千慧, 中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 単純金属/Ge界面のフェルミレベル・デピニング：第一原理計算による検討2022
- Author(s)
  西本瑛, 植田夏葉, 中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 半導体のpn接合における点欠陥・不純物を介したトンネル電流の理論的検討2022
- Author(s)
  加藤珠良偉, 趙祥勲, 中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 低次元薄膜半導体のpn接合におけるトンネル電流の振る舞い：その理論的検討2022
- Author(s)
  趙祥勲, 飯塚将太, 中山隆史
- Organizer
  第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] Si-pn 接合中の SiGe 量子井戸の共鳴準位によるトンネル電流の増大2022
- Author(s)
  趙祥勲, 加藤公彦, 飯塚将太, 森貴洋, 中山隆史
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 金属酸化物中の酸素空孔の拡散と分布形態：第一原理計算に基づくその化学的傾向の検討2021
- Author(s)
  笈川拓也、中山隆史
- Organizer
  第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 金属/SiC界面のショットキーバリアの界面原子による変調：第一原理計算による検討2021
- Author(s)
  西本瑛、中山隆史
- Organizer
  第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 0次元ペロブスカイト半導体Cs_4PbX_6の安定性と光学的性質：第一原理計算による検討2021
- Author(s)
  冨田愛美, 中山隆史
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] Control of Point-defect Formation by Electric Field at Metal/semiconductor Interfaces; First-principles View (invited talk)2021
- Author(s)
  Takashi Nakayama
- Organizer
  Int. Conf. Processing & Manufactoring of Advanced Materials (THERMEC 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 強誘電HfO2相の安定性における帯電と歪の複合効果：第一原理計算による検討2021
- Author(s)
  新井千慧、白石悠人、洗平昌晃、白石賢二、中山隆史
- Organizer
  第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] p/n接合中の共鳴不純物準位によるトンネル電流の増大:直接・間接バンドギャップ系の比較2021
- Author(s)
  趙祥勲、中山隆史
- Organizer
  第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] p/n接合中の共鳴不純物準位によるトンネル電流の増大:直接・間接バンドギャップ系の比較2021
- Author(s)
  趙祥勲，中山隆史
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] ペンタセン膜中の金属原子クラスターの形態と安定性：第一原理計算による検討2021
- Author(s)
  渡邊駿汰，川端康平, 富田陽子，中山隆史
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 遷移金属酸化物中の酸素空孔の拡散と分布の理論的検討2020
- Author(s)
  笈川拓也、長澤立樹、中山隆史
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 帯電が誘起する強誘電直方晶 HfO2薄膜の安定性：第一原理計算による検討2020
- Author(s)
  新井千慧、白石悠人、洗平昌晃、白石賢二、中山隆史
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] ペンタセン膜中の構造欠陥の電子状態：第一原理計算による検討2020
- Author(s)
  渡邊駿汰、中山隆史
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] Charging-induced Stabilization of Ferroelectric Orthorhombic HfO2 Phase: Key Growth Processes based on First-principles Study2020
- Author(s)
  T.Nakayama, K.Arai, Y.Shiraishi, R.Nagasawa, M.Araidai, K.Shiraishi
- Organizer
  51th IEEE Semiconductor Interface Specialists Conference (IEEE SISC 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] Charging-induced stabilization of ferroelectric orthorhombic HfO2 films: first-principles study on key growth conditions2020
- Author(s)
  K.Arai, Y.Shiraishi, R.Nagasawa, M.Araidai, K.Shiraishi, T.Nakayama
- Organizer
  2020 Int. Conf. on Solid State Devices and Materials (SSDM 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] 不純物を持つ Si-p/n接合におけるトンネル電流：３次元計算による検討2020
- Author(s)
  趙祥勲、中山隆史
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] Electronic structures and impurity accumulation around extended defects in pentacene films: first-principles study2020
- Author(s)
  S.Watanabe, T.Nakayama
- Organizer
  2020 Int. Conf. on Solid State Devices and Materials (SSDM 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K03815
[Presentation] First-principles study of defect properties in radiation-detectable TlBr2019
- Author(s)
  M.Ishikawa, T.Nakayama, K.Wakita, Y.G.Shim, T.Onodera, N.Mamedov
- Organizer
  The 46th International Symposium on Compound Semiconductor, Nara Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] New types of resonant tunneling currents at Si-p/n junctions; Theoretical design2019
- Author(s)
  S. Cho, T. Nakayama
- Organizer
  International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Scattered distribution of oxygen vacancies in anatase TiO2 film; first-principles study on VMCO-memory characteristics2019
- Author(s)
  T. Oikawa, R. Nagasawa, M. Araidai, K. Shiraishi, T. Nakayama
- Organizer
  International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Physics of Gap-state Control at Metal/Semiconductor Junctions; Schottky Barrier and Interface Defects2019
- Author(s)
  T. Nakayama
- Organizer
  19th International Workshop on Junction Technology (IWJT 2019), Kyoto Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Generation of one-dimensional metal-atom nano-rods in insulating SAM films: first-principles study2019
- Author(s)
  S. Watanabe, T. Nakayama
- Organizer
  International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Metal-atom Penetration into Organic Solids: Difference between σ- and π-orbital Molecular Systems2018
- Author(s)
  S. Watanabe, T. Nakayama
- Organizer
  14th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] 金属/半導体・絶縁体界面のショットキーバリアと安定性：gap状態の役割2018
- Author(s)
  中山隆史
- Organizer
  日本学術振興会第154委員会第107回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Metal-atom distribution and its effects on carrier transport in organic semiconductors2018
- Author(s)
  Y. Tomita, K. Kawabata, T. Nakayama
- Organizer
  UK Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] TiN/Ge界面のショットキーバリアに関する第一原理計算による検討Ⅱ -乱れた界面のショットキーバリア-2018
- Author(s)
  西本俊輝、中山隆史
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study2018
- Author(s)
  T. Nishimoto, T. Nakayama
- Organizer
  14th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Electronic and optical properties of 2-dimensional incommensurate Tl-based semiconductors: First-principles study on TlInS2 ,TlGaSe2 and TlGaS22018
- Author(s)
  M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
- Organizer
  34th Int. Conf. Physics of Semiconductors (ICPS2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Structural and Charging Stability of Metal Nanodot Memory in SiO2; First-Principles Study2018
- Author(s)
  T. Nakayama, S. Yamazaki, Y. Shiraishi
- Organizer
  Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] 金属/SiO2界面における電場下での金属原子の拡散2018
- Author(s)
  長澤立樹、浅山佳大、中山隆史
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Physics of Fermi-Level "Unpinning" at Metal/Ge Interfaces; First-Principles View2018
- Author(s)
  T. Nakayama, T. Nishimoto
- Organizer
  Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] 金属原子の有機分子膜への侵入過程に関する理論的検討-ペンタセンの場合2018
- Author(s)
  渡邊駿汰,中山隆史
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Metal-atom distribution and its effects on carrier transport in organic semiconductors2018
- Author(s)
  Y. Tomita, K. Kawabata, T. Nakayama
- Organizer
  19th Int. Symp.Physics of Semiconductors and Applications (ISPSA 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Resonance-enhanced Tunneling Current through Doped Si-p/n Junction; Theoretical Study2018
- Author(s)
  S. Cho, S. Iizuka, T. Nakayama
- Organizer
  2018 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Why Fermi-level Pinning is broken at some Metal/Ge Interfaces： based on first-principles study of TiN/Ge(001)2018
- Author(s)
  T. Nakayama, T. Nishimoto
- Organizer
  9th Int. SiGe Technol. and Device Meeting & 11th Int. Conf. on Silicon Epitaxy and Hetero-structures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] 金属原子の有機SAM膜への侵入過程に関する理論的検討2017
- Author(s)
  渡邊駿汰,中山隆史
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Acceleration of metal-atom diffusion under electric field at metal/insulator interfaces: First principles study2017
- Author(s)
  R.Nagasawa, Y.Asayama, T.Nakayama
- Organizer
  2017 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] First-principles study of optical properties in incommensurate TlInS2 ,TlGaSe2 and TlGaS22017
- Author(s)
  M.Ishikawa, T.Nakayama, K.Wakita, Y.G.Shim, N.Mamedov
- Organizer
  29th Int. Conf. Defects in Semiconductors (ICDS29)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] TiN/Ge界面のショットキーバリアに関する第一原理計算による検討2017
- Author(s)
  西本俊輝、中山隆史
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Metal-atom Ionization and Diffusion under Electric Field around Metal/insulator Interfaces; First-principles View2017
- Author(s)
  T. Nakayama, Y. Asayama, R. Nagasawa
- Organizer
  232nd ECS MEETING
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05488
[Presentation] Metal-Atom Penetration and Clustering Processes in PTCDA Thin Films; First-Principles Study of Film Degradation2016
- Author(s)
  K. Kawabata, T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Epochal Tsukuba (Tsukuba Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Physics of Metal/Ge Interfaces: Interface Defects and Fermi-level Depinning2016
- Author(s)
  T. Nakayama, S. Sasaki, Y. Asayama
- Organizer
  PRiME 2016 (Pasific Rim Meeting on Electrochemical and Solid-state Science)
- Place of Presentation
  Honolulu USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study2016
- Author(s)
  S. Iizuka, T. Nakayama
- Organizer
  ISCSI-VII/ISTDM2016(7th Int. Symp. on Control of Semiconductor Interfaces & Int. SiGe Technology and Device Meeting)
- Place of Presentation
  Nagoya Univ. (Nagoya Japan)
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Charge Retention and Stability of Metal Nanodots in SiO2: First-principles Study on Metal Dependence2016
- Author(s)
  S. Yamazaki, Y. Asayama, Y. Onda, T. Nakayama
- Organizer
  SSDM 2016 (Int. Conf. Solid State Devices and Materials)
- Place of Presentation
  Epochal Tsukuba (Tsukuba Japan)
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Ionization and diffusion of metal atoms under electric field at metal/insulator interfaces; First-principles study2016
- Author(s)
  Y. Asayama, M. Hiyama, T. Nakayama
- Organizer
  ISCSI-VII/ISTDM2016(7th Int. Symp. on Control of Semiconductor Interfaces & Int. SiGe Technology and Device Meeting)
- Place of Presentation
  Nagoya Univ. (Nagoya Japan)
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] First-principles study of optical properties of incommensurate TlInSe2 and TlInS22016
- Author(s)
  M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
- Organizer
  ICTMC-20 (20th Int. Conf. Ternary and Multinary Compounds)
- Place of Presentation
  Halle Germany
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] First-principles study of Giant thermoelectric power in incommensurate TlInSe2 and TlInS22016
- Author(s)
  M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
- Organizer
  19th Int. Conf. Superlattices, Nanostructures and Nanodevices
- Place of Presentation
  Hong Kong China
- Year and Date
  2016-07-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Quantum processes of exciton scattering at organic solar organic solar cell interfaces2016
- Author(s)
  T. Nakayama
- Organizer
  EMN (Energy Materials Nanotechnology) Qingdao Meeting 2016
- Place of Presentation
  Qingdao China
- Year and Date
  2016-06-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Metal-atom interactions and clustering in organic semiconductor systems2016
- Author(s)
  Y. Tomita, T. Nakayama
- Organizer
  19th Int. Conf. Superlattices, Nanostructures and Nanodevices
- Place of Presentation
  Hong Kong China
- Year and Date
  2016-07-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Structural and electronic stability of metal nanodots in amorphous SiO22016
- Author(s)
  T. Nakayama, Y. Asayama, Y. Onda
- Organizer
  ICSNN 2016 (19th Int. Conf. on Superlattices, Nanostructures and Nanodevices)
- Place of Presentation
  Hong Kong China
- Year and Date
  2016-07-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Quantum processes of exciton dissociation at organic solar-cell interfaces; Effects ofinterface disorder, hot exciton, and polaron2015
- Author(s)
  T. Nakayama, H. Iizuka, Y. Masugata
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2015))
- Place of Presentation
  Kona (USA)
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Molecular Vibration Effects on Exciton Scattering Processes at Organic Semiconductor Interfaces2015
- Author(s)
  Y. Masugata, T. Nakayama
- Organizer
  15th Int. Conf. Formation of Semiconductor Interfaces (ICFSI-15)
- Place of Presentation
  International Conference Center Hiroshima (Hiroshima, Hiroshima)
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] First-principles study of TlInSe2 and TlInS22015
- Author(s)
  M. Ishikawa, T. Nakayama, K. Wakita, N. Mamedov
- Organizer
  Int. Conf. Thermoelectric Materials Science 2015 (TMS2015)
- Place of Presentation
  Nagoya University (Aichi, Nagoya)
- Year and Date
  2015-11-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Physics of Metal/Ge Interfaces: Fermi-level Unpinning and Interface Disorders2015
- Author(s)
  T. Nakayama
- Organizer
  2015 Energy Materials Nanotechnology Cancun Meeting
- Place of Presentation
  Cancun (Mexico)
- Year and Date
  2015-07-08
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Chemical Trend of Isoelectronic Traps in Si Tunnel FET; First-Principles Study2015
- Author(s)
  S. Iizuka, T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center (Hokkaido, Sapporo)
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] First-principles study of Nanostructure of TlInSe22015
- Author(s)
  M. Ishikawa, T. Nakayama, K. Wakita, N. Mamedov
- Organizer
  Euro. MRS 2015
- Place of Presentation
  Warsaw (Poland)
- Year and Date
  2015-09-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] ポリタイプ結晶の電子物性－積層欠陥と空孔秩序を中心に－2015
- Author(s)
  中山隆史
- Organizer
  第45回結晶成長国内会議　（ＮＣＣＧ４５）
- Place of Presentation
  北海道大学 (北海道，札幌）
- Year and Date
  2015-10-19
- Invited
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] 第一原理計算によるII-VI族化合物半導体の酸素ドープの光学特性の解析2014
- Author(s)
  石川真人、中山隆史
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 第一原理計算によるSn/Ge界面の構造とSBH変調の関係2014
- Author(s)
  小日向恭祐, 中山隆史
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 金属/半導体界面における拡散過程の理論検討2014
- Author(s)
  平松智記, 中山隆史
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013
- Author(s)
  Y. Tomita, T. Park, and T. Nakayama
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
- Place of Presentation
  Kauai U.S.A.
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 自己組織化単分子膜における金属原子の拡散2013
- Author(s)
  吉田一行、中山隆史
- Organizer
  第33回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013
- Author(s)
  Y. Tomita, T. Park, T. Nakayama
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
- Place of Presentation
  Kauai U.S.A
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 3サイト分子架橋系におけるループ電流の過渡特性に関する理論研究2013
- Author(s)
  飯塚秀行，中山隆史
- Organizer
  第33回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Quantum processes of Exciton dissociation at Organic Semiconductor Interfaces2013
- Author(s)
  K. Sato, T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Fukuoka Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013
- Author(s)
  T. Nakayama, K. Sato
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
- Place of Presentation
  Kauai U.S.A
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] First-principles study of oxygen-doping electric optical states2013
- Author(s)
  M. Ishikawa and T. Nakayama
- Organizer
  18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] FirstPrinciples Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013
- Author(s)
  M. Ishikawa, T. Nakayama
- Organizer
  16th Int. Conf. II-VII Compound and Related Materials
- Place of Presentation
  Nagahama, Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] First-Principles Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013
- Author(s)
  M. Ishikawa and T. Nakayama
- Organizer
  16th Int. Conf. II-VI Compound and Related Materials (II-VI 2013)
- Place of Presentation
  Nagahama, Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Firstprinciples study of oxygen-doping electric optical states in II-VI semiconductors2013
- Author(s)
  M. Ishikawa, T. Nakayama
- Organizer
  18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Firstprinciples study of oxygen-doping states in IIVI semiconductors2013
- Author(s)
  M. Ishikawa, T. Nakayama
- Organizer
  40th Int. Symp. Compound Semiconductors
- Place of Presentation
  Kobe Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Physics of Interface Segregation; What Determine Schottky Barrier at Metal/Semiconductor Interfaces ?2013
- Author(s)
  T. Nakayama
- Organizer
  2013 JSAP-MRS (Japan-USA) Joint Symposia
- Place of Presentation
  Kyoto Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] First-principles study of oxygen-doping states in II VI semiconductors2013
- Author(s)
  M. Ishikawa and T. Nakayama
- Organizer
  ISCS 2013 - 40th Int. Symp. Compound Semiconductors
- Place of Presentation
  Kobe Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 界面における電子正孔対の解離シミュレーション2013
- Author(s)
  佐藤紅介、中山隆史
- Organizer
  第33回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013
- Author(s)
  T. Nakayama and K. Sato
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
- Place of Presentation
  Kauai U.S.A.
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] 分子架橋系における分子-電極接合の幾何と過渡電流2013
- Author(s)
  佃真吾,　中山隆史
- Organizer
  第33回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Disorderinduced Schottky-barrier Changes at Metal/Semiconductor Interfaces; Firstprinciples Calculations2012
- Author(s)
  K. Kobinata, T. Nakayama
- Organizer
  31st Int. Conf. Phys. Semicond. (ICPS2012)
- Place of Presentation
  Zurich Switzerland
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Dopingenhanced Stability of Catalytic Pt Ultrathin Films on Graphene Sheet : First-principles Calculations2012
- Author(s)
  T. Park, T. Nakayama
- Organizer
  31st Int. Conf. Phys. Semicond
- Place of Presentation
  Zurich Switzerland
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Firstprinciples study of band-gap reduction of II-VI semiconductors by Oxygen dopings; Comparison to III-V Systems2012
- Author(s)
  M. Ishikawa, T. Nakayama
- Organizer
  17th Int. Conf. Superlattices, Nanostructures, Nanodevices
- Place of Presentation
  Dresden Germany
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] First-principles Study of Atomic Impurity States in Organic Semiconductors : Their Chemical Classification2012
- Author(s)
  Y. Tomita, T. Nakayama, S. Okada
- Organizer
  31st Int. Conf. Phys. Semicond. (ICPS2012)
- Place of Presentation
  Zurich Switzerland
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Oxygendoping-induced Band-gap Reduction in II-VI Semiconductors; Comparison to III-V Systems2012
- Author(s)
  M. Ishikawa, T. Nakayama
- Organizer
  31st Int. Conf. Phys. Semicond. (ICPS2012)
- Place of Presentation
  Zurich Switzerland
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Schottkybarrier change by structural disorders at metal/Si interfaces2011
- Author(s)
  K. Kobinata, T. Nakayama
- Organizer
  Simulation of Semiconductor Processes and Devices (SISPAD)
- Place of Presentation
  Osaka Japan
- Year and Date
  2011-09-10
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Physics of Schottkybarrier change by segregation and structural disorder at metal/Si interfaces : First-principles study2011
- Author(s)
  T. Nakayama
- Organizer
  ICSI-72011 (7th Int. Conf. Si Epitaxy and Heterostructures)
- Place of Presentation
  Leuven Belgium
- Invited
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Firstprinciples study of metal-atom diffusion in graphene and organic solids : intrinsic difference from inorganic systems2011
- Author(s)
  Y. Tomita, T. Nakayama
- Organizer
  ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
- Place of Presentation
  Maui USA
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] How and why loop currents are generated in molecular bridge systems : density-matrix calculation of time evolustion2011
- Author(s)
  T. Nakayama, H. Iizuka, G. Anagama, Y. Tomita
- Organizer
  ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
- Place of Presentation
  Maui USA
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] How and why loop currents are generated in molecular bridge systems: density-matrix calculation of time evolustion2011
- Author(s)
  T. Nakayama
- Organizer
  International Symposium on Advanced Nanostructures and Nano-Devices
- Place of Presentation
  Maui, USA
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2011
- Author(s)
  T. Nakayama
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures(招待講演)
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Photo-absorption spectra of nitrogen-doped InP and GaP : Comparison of direct and indirect band-gap systems2010
- Author(s)
  M.Ishikawa, T.Nakayama
- Organizer
  Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
- Place of Presentation
  Beijing, China
- Year and Date
  2010-07-22
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control (invited)2010
- Author(s)
  T.Nakayama
- Organizer
  International Conference on Solid-State and integrated Circuit Technology
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides : First-principles Study2010
- Author(s)
  T.Nakayama
- Organizer
  International Symposium on Technology Evolutionfor Silicon Nano-Electronics
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-06-05
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] ナノ界面科学の課題2010
- Author(s)
  中山隆史
- Organizer
  応用物理学会講演会
- Place of Presentation
  長崎大(シンポジウム招待講演)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010
- Author(s)
  T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
- Organizer
  IEDM 2010
- Place of Presentation
  San Francisco USA
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Suicides exist in Nature2010
- Author(s)
  T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  サンフランシスコ、米国
- Year and Date
  2010-12-07
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] 金属/絶縁体界面の物理 -電子準位はどのように整列するのか-2010
- Author(s)
  中山隆史
- Organizer
  触媒学会主催第3回新電極触媒シンポジウム講演
- Place of Presentation
  静岡(招待講演)
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010
- Author(s)
  T.Nakayama
- Organizer
  Int.Conf.on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China (招待講演)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Metal-atom diffusion in organic semiconductors : graphene and oligoacene systems2010
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  30th Int.Conf.Physics of Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] ナノ界面科学の課題2010
- Author(s)
  中山隆史
- Organizer
  応用物理学会シンポジウム講演
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] ナノ界面科学の課題2010
- Author(s)
  中山隆史
- Organizer
  応用物理学会シンポジウム
- Place of Presentation
  長崎
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010
- Author(s)
  中山隆史
- Organizer
  Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
- Place of Presentation
  Beijing, China
- Year and Date
  2010-07-20
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010
- Author(s)
  T.Nakayama
- Organizer
  International Conference on Superlattices, Nano- structures and Nanodevices 2010
- Place of Presentation
  Beijing, China
- Year and Date
  2010-07-20
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010
- Author(s)
  中山隆史
- Organizer
  Int.Conf.on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai China(招待講演)
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides: First-principles Study2010
- Author(s)
  中山隆史
- Organizer
  Int.Symp.Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-06-05
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Doping properties of metal silicides : firstprinciples study on solubility and Schottky barrier2010
- Author(s)
  T.Nakayama, S.Sotome
- Organizer
  30th Int.Conf.Physics of Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010
- Author(s)
  中山隆史, 他
- Organizer
  2010 IEEE International Electron Devices Meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2010-12-07
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Doping properties of metal silicides : first-principles study on solubility and Schottky barrier2010
- Author(s)
  T.Nakayama
- Organizer
  30th Int.Conf.Physics of Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-29
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] 金属/絶縁体界面の物理-電子準位はどのように整列するのか-2010
- Author(s)
  中山隆史
- Organizer
  触媒学会燃料電池関連触媒研究会
- Place of Presentation
  伊東(招待講演)
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] First-principles study of metal-cluster adsorption on graphene/graphite sheets2010
- Author(s)
  T.Park, T.Nakayama
- Organizer
  5th Int.Workshop on Electronic Structure and Processes at Molecular-Based Interfaces
- Place of Presentation
  Chiba, Japan
- Year and Date
  2010-01-26
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Doping properties of metal silicides : first-principles study on solubility and Schottky barrier2010
- Author(s)
  T.Nakayama
- Organizer
  30th International Conference on the Physics of Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010
- Author(s)
  T.Nakayama
- Organizer
  Int.Conf.Superlattices, Nanostructures and Nanodevices
- Place of Presentation
  Beijing, China
- Year and Date
  2010-07-20
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides : First-principles Study2010
- Author(s)
  T.Nakayama
- Organizer
  Int.Symp.Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  東京
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Transient current behavior at nano-contact nano-scale systems(invited)2009
- Author(s)
  T.Nakayama
- Organizer
  Photonics Integration-Core Electronics Workshop
- Place of Presentation
  Cambridge, England
- Year and Date
  2009-07-03
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Transient current behavior in nano-linked molecular-bridge systems; what causes applied-pulse deformation?2009
- Author(s)
  T. Nakayama
- Organizer
  5th Int. Conf. Molecular electronics and Bioelectronics
- Place of Presentation
  Miyazaki, Japan
- Year and Date
  2009-03-16
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Adsorption and Diffusion of Metal Atoms in/on Graphene Sheets ; First-principles Study2009
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  15th Int.Symp.Intercalation Compounds
- Place of Presentation
  Beijing, China
- Year and Date
  2009-05-13
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Stability and Schottky barrier of silicides : First-principles study2009
- Author(s)
  T.Nakayama, S.Sotome, S.Shinji
- Organizer
  16th Biannual Conf. Insulating Films on Semi conductors
- Place of Presentation
  Cambridge, England
- Year and Date
  2009-06-30
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces2009
- Author(s)
  中山隆史
- Organizer
  2nd Int.Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Anan, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Universal Behavior of Metal-atom Diffusions in Organic Pentacene and Graphene Systems ; First-principles Study2009
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Energy-level alignment,ionization,and hole transfer of bio-amino acids at protein/semiconductor junctions2009
- Author(s)
  T. Nakayama
- Organizer
  5th Int. Conf. Molecular electronics and Bioelectronics
- Place of Presentation
  Miyazaki, Japan
- Year and Date
  2009-03-17
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009
- Author(s)
  T.Nakayama, M.Oda
- Organizer
  15th Int.Symp.Intercalation Compounds, Compounds
- Place of Presentation
  Beijing, China
- Year and Date
  2009-05-12
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] 未来デバイス界面の物理-ショットキーバリアと量子散逸を例に2009
- Author(s)
  中山隆史
- Organizer
  応用物理学会講演会
- Place of Presentation
  筑波大(シンポジウム招待講演)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Stability and Schottky barrier of silicides : First-principles study2009
- Author(s)
  T.Nakayama
- Organizer
  16th Biannual Conference of Insulating Films on Semi conductors
- Place of Presentation
  Cambridge, England
- Year and Date
  2009-06-30
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009
- Author(s)
  T.Nakayama
- Organizer
  15th Int.Symposium on Intercalation Compounds
- Place of Presentation
  Beijing, China
- Year and Date
  2009-05-12
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Metal-atom diffusion in organic solids : graphene and acetylene prototypes2009
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  5th Int.Conf.Molecular electronics and Bioelectronics
- Place of Presentation
  Miyazaki, Japan
- Year and Date
  2009-03-17
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] 可視光で見る埋もれた界面の電子:反射率差分光(RDS)の物理2009
- Author(s)
  中山隆史
- Organizer
  応用物理学会講演会
- Place of Presentation
  .筑波大(シンポジウム招待講演)
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Polymorphic Silicide Interfaces ; First-principles Study of Stability, Doping, and Schottky Barrier2009
- Author(s)
  T.Nakayama
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Metal atom diffusion in organic solids ; first-principles study2009
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  G-COE Workshop on Organic Elctronics : Electronic States, Charge Transport and Devices
- Place of Presentation
  Chiba, Japan(招待講演)
- Year and Date
  2009-11-05
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Polymorphic Silicide Interfaces ; Firstprinciples Study of Stability, Doping, and Schottky Barrier2009
- Author(s)
  T.Nakayama, S.Sotome
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Transient current behavior at nano-contact nano-scale systems2009
- Author(s)
  中山隆史
- Organizer
  Photonics Integration-Core Electronics Workshop
- Place of Presentation
  Cambridge, UK(招待講演)
- Year and Date
  2009-07-03
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces(invited)2009
- Author(s)
  T.Nakayama
- Organizer
  2nd Int.Workshop on Epitaxial Growth and Fundam ental Properties of Semiconductor Nanostructures
- Place of Presentation
  Anan, Japan
- Year and Date
  2009-08-09
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Transient current behavior in nano-linked molecularbridge systems ; what causes appliedpulse deformation?2009
- Author(s)
  中山隆史
- Organizer
  5th Int. Conf.Molecular Elect.Bioelectronics
- Place of Presentation
  Miyazaki, Japan(招待講演)
- Year and Date
  2009-03-16
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at metal/high-k interfaces (invited)2008
- Author(s)
  T. Nakayama
- Organizer
  2008 MRS Spring Meeting
- Place of Presentation
  San Francisco USA
- Year and Date
  2008-03-26
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] First-principles study of defect-induced carrier generation in InN films; dislocation vs. vacancies and electrode interfaces2008
- Author(s)
  T. Nakayama
- Organizer
  15th Int. Conf.Superlattices,Nanostructures,and Nanodevices
- Place of Presentation
  Natal, Brazil
- Year and Date
  2008-08-05
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at metal/high-k interfaces2008
- Author(s)
  T.Nakayama, R.Ayuda, H.Nii, K.Shiraishi
- Organizer
  2008 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Currentinduced quantum friction of nanolinked molecule vibration2008
- Author(s)
  T.Nakayama, Y.Shigeno
- Organizer
  29th Int.Conf.Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Theoretical investigations on metal/high-k interfaces2008
- Author(s)
  K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
- Organizer
  2008 International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theory of current-induced friction of nano-linked molecule vibration2008
- Author(s)
  T. Nakayama
- Organizer
  15th Int. Conf.Superlattices,Nanostructures,Nanodevices
- Place of Presentation
  Natal, Brazil
- Year and Date
  2008-08-07
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Defect-induced carrier generation in InN films (invited)2008
- Author(s)
  T. Nakayama
- Organizer
  Int. Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone, Japan
- Year and Date
  2008-03-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Physics of Schottky barrier at metal/high-k interfaces(invited)2008
- Author(s)
  T. Nakayama
- Organizer
  MRS Spring Meeting
- Place of Presentation
  San Francisco,USA
- Year and Date
  2008-03-26
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Stability and Schottky barrier of polymorphic Ni_xSi_y silicides on Si substrate; first-principles study2008
- Author(s)
  T. Nakayama
- Organizer
  29th Inc. Conf. Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-2008
- Author(s)
  K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
- Organizer
  214th Meeting of Electrochemical Society
- Place of Presentation
  Pheonix, AZ., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Defectrinduced carrier generation in InN films(invited)2008
- Author(s)
  T. Nakayama
- Organizer
  Int.Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone,Japan
- Year and Date
  2008-03-03
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Electron carrier generation by edge dislocations in InN films ; first-principles study2008
- Author(s)
  T.Nakayama, Y.Takei
- Organizer
  29th Int.Conf.Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at metal/high-k interfaces (invited)2008
- Author(s)
  T. Nakayama
- Organizer
  MRS Spring Meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2008-03-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Stability and Schottky barrier of polymorphic NixSiy silicides on Si substrate ; first-principles study2008
- Author(s)
  T.Nakayama, S.Shinji
- Organizer
  29th Int.Conf.Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Electron carrier generation by edge dislocations in InN films; first_ principles study2008
- Author(s)
  T. Nakayama
- Organizer
  29th Inc. Conf. Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Current-induced quantum friction in nano-linked molecule vibration2008
- Author(s)
  中山隆史
- Organizer
  13th Advanced Heterostructure and Nanostructures Workshop
- Place of Presentation
  Kona, USA
- Year and Date
  2008-12-09
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Theory of current-induced friction of nano-linked molecule vibration2008
- Author(s)
  T.Nakayama, Y.Shigeno
- Organizer
  15th Int.Conf.Superlattices, Nanostructures, Nano devices
- Place of Presentation
  Natal, Brazil
- Year and Date
  2008-08-07
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Defect-induced carrier generation in InN films (invited)2008
- Author(s)
  T. Nakayama
- Organizer
  Int. Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone Japan
- Year and Date
  2008-03-03
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Firstprinciples study of defect-induced carrier generation in InN films ; dislocation vs. vacancies and electrode interfaces2008
- Author(s)
  T.Nakayama, Y.Takei
- Organizer
  15th Int.Conf.Superlattices, Nanostructures, Nano devices
- Place of Presentation
  Natal, Brazil
- Year and Date
  2008-08-05
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Electronic breathing of transient current through molecule-bridge systems2008
- Author(s)
  Y.Tomita, T.Nakayama
- Organizer
  13th Advanced Heterostructure and Nanostructures Workshop
- Place of Presentation
  Kona, USA
- Year and Date
  2008-12-09
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Physics of Schottky barrier at Metal/high-k Interfaces2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA(invited)
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Schottky barrier at Metal/high-k Interface2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting, H5.5
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Current-induced quantum friction of nano-linked molecule vibration2008
- Author(s)
  T. Nakayama
- Organizer
  29th Inc. Conf. Physics Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20540310
[Presentation] Schottky barrier and stability of metal/high-k interfaces ; theoretical view2007
- Author(s)
  T. Nakayama(Invited)
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics2007
- Author(s)
  K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D. C., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Schottky banier and stability of metal/high-k ilterfaces;theoreticalview (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int.Conf.on Sohd State Devices and Materials
- Place of Presentation
  Tsukuba,Japan
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Schottky barrier and stability of metal/high-k interfaces ; theoretical view2007
- Author(s)
  T.Nakayama
- Organizer
  Int.Conf.Solid State Devices and Materials
- Place of Presentation
  Tsukuba Japan [Invited]
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces2007
- Author(s)
  K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
- Organizer
  International Symposium on Theories of Organic-Metal Interfaces 2007
- Place of Presentation
  Suita, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Unusual Schottky Barrier at Metal/High-k Interfaces (invited)2007
- Author(s)
  中山隆史
- Organizer
  物性研短期研究会「計算物性物理学の進展」
- Place of Presentation
  物性研柏
- Year and Date
  2007-11-01
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Ionization of bio-amino acids/Transient current in nano-contact systems; theoretical study (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Workshop on Super-Functionality Organic Devices
- Place of Presentation
  Chiba, Japan
- Year and Date
  2007-06-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan.
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada(Invited)
- Organizer
  211th Meeting of Electrochemical Society, Chicago
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Ionization of bio-amino acids/Transient current ill nanocontact systems; theoretical study(invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int.Workshop on Super'Functionality Organic Devices
- Place of Presentation
  Chiba,Japan
- Year and Date
  2007-06-19
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Unusual Schottky Barrier at Metal/High-k Interfaces (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  ISSP University of Tokyo meeting "development of computational condensed matter physics"
- Place of Presentation
  Kashiwa Japan
- Year and Date
  2007-11-01
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Ionization of bio-amino acids/Transient current in nano-contact systems; theoretical study (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Workshop on Super-Functionality Organic Devices
- Place of Presentation
  Chiba Japan
- Year and Date
  2007-06-19
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2007-09-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (invited)2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2007-09-20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007
- Author(s)
  T. Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan.
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics at metal/insulator interfaces; atomic and electronic structures (invited, in Japanese)2006
- Author(s)
  T. Nakayama
- Organizer
  Jpn. Appl. Phys. Meeting Symp
- Place of Presentation
  Ritsumeikan Univ. Shiga Japan
- Year and Date
  2006-08-28
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Physics of Metal/High-k Interfaces2006
- Author(s)
  T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 金属/絶縁体界面の物理-構造と電子物性-(invited)2006
- Author(s)
  中山隆史
- Organizer
  応用物理学会シンポジウム
- Place of Presentation
  立命館大滋賀
- Year and Date
  2006-08-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Defect Formation in Si and ZnSe/GaAs Epitaxy (invited)2006
- Author(s)
  T. Nakayama
- Organizer
  Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Bonassola Italy
- Year and Date
  2006-09-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Design principles for effective workfunctions of gate metals (invited)2006
- Author(s)
  T. Nakayama
- Organizer
  SEMI Forum Japan
- Place of Presentation
  Osaka Japan
- Year and Date
  2006-06-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Physics of Metal/High-k Interfaces (invited)2006
- Author(s)
  T. Nakayama
- Organizer
  4th Int. Symp. on High Dielectric Constant Gate Stacks
- Place of Presentation
  Cancun Mexico
- Year and Date
  2006-11-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] 金属/絶縁体界面の物理:その構造と電子特性(invited)2006
- Author(s)
  中山隆史
- Organizer
  ゲートスタック第11回研究会-材料・プロセス・評価の物理-
- Place of Presentation
  三島静岡
- Year and Date
  2006-02-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] What Happen at High-k Dielectric Interfaces?2006
- Author(s)
  K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, CA, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of metal/insulator interfaces; crystal structures and electronic properties (invited, in Japanese)2006
- Author(s)
  T. Nakayama
- Organizer
  11th gate Stack meeting Physics of materials, processes and analysis
- Place of Presentation
  Mishima Sizuoka Japan
- Year and Date
  2006-02-03
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Elemental processes of interface analysis theoretical view (invited, in Japanese)2006
- Author(s)
  T. Nakayama
- Organizer
  Surf. Sci. Soc. Lecture
- Place of Presentation
  Tokyo Science Univ., Tokyo
- Year and Date
  2006-11-16
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006
- Author(s)
  K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
- Organizer
  8th International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 理論から見た界面分析の基礎過程(invited)2006
- Author(s)
  中山隆史
- Organizer
  表面科学会基礎講座
- Place of Presentation
  東京理科大東京
- Year and Date
  2006-11-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17540291
[Presentation] Why Defect Density Remarkably Increases at Metal/Ge Interfaces;
- Author(s)
  T. Nakayama
- Organizer
  2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS)
- Place of Presentation
  Kohala USA
- Year and Date
  2014-11-30 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Stability and Schottky Barrier of Spin-polarized Fe3Si/Ge Interfaces; First-Principles Study
- Author(s)
  K. Kobinata, T. Nakayama
- Organizer
  8th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-8)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation
- Author(s)
  Y. Tomita, T. Nakayama
- Organizer
  2012 Int. Conf. on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] How and Why Loop Currents Are Generated in Molecular Bridge Systems : Density-Matrix Calculation of Time Evolution
- Author(s)
  H. Iizuka, T. Nakayama, G. Anagama
- Organizer
  6th Int. Symp. Surface Science(ISSS-6)
- Place of Presentation
  Tokyo Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Physics of Fermi-level Unpinning at Metal/Ge Interfaces
- Author(s)
  T. Nakayama, K.Kobinata, S.Sasaki
- Organizer
  Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
- Place of Presentation
  Savannah USA
- Year and Date
  2014-08-03 – 2014-08-08
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Defect distribution and MIGS at metal/Ge interfaces: first-principles study
- Author(s)
  S. Sasaki, T.Hiramastu, K.Kobinata, T.Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Physics of Metal/Ge Interfaces: Fermi-level Unpinning and Interface Disorders
- Author(s)
  T. Nakayama, K.Kobinata, S.Sasaki
- Organizer
  Int. Uni. Material Research Society (IUMRS 2014)
- Place of Presentation
  Fukuoka Japan
- Year and Date
  2014-08-24 – 2014-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Quantum Process of Exciton Dissociation at Organic Semiconductor Interfaces
- Author(s)
  T. Nakayama, Y.Masugata, K.Sato
- Organizer
  Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
- Place of Presentation
  Savannah USA
- Year and Date
  2014-08-03 – 2014-08-08
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] First-Principles Study of N, O, and F Molecule-Dot Doping in III-V and II-VI Semiconductors
- Author(s)
  M. Ishikawa, T.Nakayama
- Organizer
  Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
- Place of Presentation
  Savannah USA
- Year and Date
  2014-08-03 – 2014-08-08
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Theoretical study of current fluctuation in multi-contact molecular bridge systems
- Author(s)
  S. Tsukuda, T.Nakayama
- Organizer
  Int. Conf. Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26400310
[Presentation] Enhanced Stability of Catalytic Pt Ultrathin Films on Doped Graphene Sheets : Firstprinciples Study
- Author(s)
  T. Park, T. Nakayama
- Organizer
  6th Int. Symp. Surface Science (ISSS-6)
- Place of Presentation
  Tokyo Japan
- Data Source
  KAKENHI-PROJECT-23540361
[Presentation] Quantum process of exciton dissociation at disordered organic solar-cell interfaces
- Author(s)
  H. Iizuka, T.Nakayama
- Organizer
  The 7th Int. Symp. Surface Science
- Place of Presentation
  Matsue Japan
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-26400310

1. NATSUME Yuhei (80114312)

# of Collaborated Projects: 6 results

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2. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 3 results

# of Collaborated Products: 20 results
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49. 浅野摂郎 (80013499)

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50. 赤井久純 (70124873)

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51. 城健男 (20093487)

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52. 藤原毅夫 (90011113)

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53. 寺倉清之 (40028212)

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54. 太田幸則 (70168954)

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55. 財満鎭明 (70158947)

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56. 宮崎誠一 (70190759)

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57. 牧原克則 (90553561)

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58. 初貝安弘 (80218495)

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59. 洗平昌晃 (20537427)

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60. 中塚理 (20334998)

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61. JONATHAN Bird P.

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62. PEPPER M.

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63. NICHOLAS R.J.

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64. EAVES L.

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65. BUTCHER P.N.

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66. SKOLNICK M.S.

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67. LIANG Yao

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68. LIANG W.Y.

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69. NICHOLAS Rob

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70. イーブスローレンス

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71. MORI Takahiro

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72. KIM Yousoo

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73. YAMAMOTO Shunji

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74. AKIYAMA Toru

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75. ITO Tomonori

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76. Wakita Kazuki

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77. 川合真紀

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78. 浅尾直樹

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79. 沈用球

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Nakayama Takashi 中山 隆史

NAKAYAMA Takashi 中山 隆史

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Theory of gap states at metal/semiconductor interfaces; annihilation mechanism and deformation in electric fieldsPrincipal Investigator

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Theory of metal-atom ionization and diffusion around metal/solid interfaces in electric fieldsPrincipal Investigator

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Theory of impurity-atom defects in organic semiconductors based on by the first-principles calculationsPrincipal Investigator

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Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systemsPrincipal Investigator

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New Schottky-barrier theory responding to interface structuresPrincipal Investigator

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First-principles nonlocal optical response theory of semiconductor surfaces and interfaces with vertical polarizationPrincipal Investigator

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First-principles theoretical study on formation dynamics, defect structures, and electronic structures of interface stacking faults during epitaxial growthPrincipal Investigator

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Nakayama Takashi 中山隆史

NAKAYAMA Takashi 中山隆史