YAMADA Keisaku 山田啓作

Researcher Number	30386734
Other IDs
Affiliation (based on the past Project Information) *help	2010: 筑波大学, 数理物質科学研究科, 教授 2009: ナノ理工学研究機構, 客員教授(専任扱い) 2007 – 2009: 早稲田大学, 附置研究所, 教授 2008: 早稲田大学, ナノ理工学研究機構, 客員教授(専任扱い) 2007: 早稲田大学, ナノ理工学研究機構, 教授
Review Section/Research Field	Except Principal Investigator Science and Engineering / Electron device/Electronic equipment
Keywords	Except Principal Investigator ゲートスタック / high-k絶縁膜 / コンビナトリアル手法 / メタルゲート / 半導体デバイス / 集積回路 / ナノデバイス / シリコン結晶シリコンデバイス / 不純物ドープ / 表面科学 … More / 電子物性 / 電子デバイス / 電子輸送 / シリコン / ひずみ / 移動度 / ナノ電子物性科学 / 半導体 / シリコン結晶 / シリコンデバイス / MOSFET / 極浅接合 / メタル・ソース・ドレイン / Niシリサイド / ショットキー障壁 Less

超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究
- Principal Investigator
  
  大毛利健治
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発
- Principal Investigator
  
  大毛利健治
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Waseda University
Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University

All 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Patent

[Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011
- Author(s)
  K.Ohmoril, K.Shiraishi, K.Yamada
- Journal Title
  
  Key Materials Engineering
  
  Volume: 470 Pages: 184-187
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry2011
- Author(s)
  S.Sato, K.Ohmori, K.Kakushima, P.Ahmet, K.Natori, K.Yamada, H.Iwai
- Journal Title
  
  Applied Physics Express
  
  Volume: 044201
- NAID
  10028209795
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs2011
- Author(s)
  T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
- Journal Title
  
  Microelectronic Engineering (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Structural effect of channel cross-section on the gate capacitance of Silicon nanowire field-effect transistors2011
- Author(s)
  S.Sato, K.Kakushima, P.Ahmet, K.Ohmori, K.Natori, K.Yamada, H.Iwai
- Journal Title
  
  ECS Transactions
  
  Volume: 34 Pages: 87-92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HtO2/interface-layer gate-stack MOSFETs2011
- Author(s)
  T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
- Journal Title
  
  Microelectronic Engineering
  
  Volume: (未定)(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011
- Author(s)
  K.Ohmori, K.Shiraishi, K.Yamada
- Journal Title
  
  Key Materials Engineering 470
  
  Pages: 184-187
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration2010
- Author(s)
  S.Sato, H.Kamimura, H.Arai, K.Kakushima, P.Ahmet, K.Ohmori, K.Yamada, H.Iwai
- Journal Title
  
  Solid-State Electronics
  
  Volume: 54 Pages: 925-928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks2010
- Author(s)
  J.Chen, T.Sekiguchi, N.Fukata, M.Takase, Y.Nemoto, R.Hasunuma, K.Yamada, T, Chikyow
- Journal Title
  
  ECS Transactions.
  
  Volume: 28 Pages: 299-304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors2010
- Author(s)
  S.Sato, K.Kakushima, P.Ahmet, K.Natori, K.Yamada, H.Iwai
- Journal Title
  
  Microelectronics Reliability
  
  Volume: (印刷中,印刷中)
- NAID
  120007130892
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Journal Title
  
  ECS Transactions 13(未定(印刷中))
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026014
[Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks
- Author(s)
  J.Chen, T.Sekiguchi, N.Fukata, M.Takase,Y.Nemoto, R.Hasunuma, K.Yamada, T,Chikyow
- Journal Title
  
  ECS Transactions Vol.28
  
  Pages: 299-304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Patent] Siナノワイヤのシリサイドの形成方法2010
- Inventor(s)
  山田啓作、大毛利健治, 他
- Industrial Property Rights Holder
  早稲田大学、東工大
- Industrial Property Number
  2010-079972
- Filing Date
  2010-03-31
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Silicon-on-Insulator Thickness Dependence of Photoluminescence from Electron-Hole Droplet2011
- Author(s)
  Y.Sakurai, K.Shiraishi, K.Ohmori, K.Yamada, S.Nomura
- Organizer
  The Third International Symposium on Interdisciplinary Materials Science (ISIMS-2011)
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO2/SiO2 Gate-stack MOSFETs2011
- Author(s)
  Takeo Matsuki, Ranga Hettiarachchi, Wei Feng, Kenji Shiraishi, Keisaku Yamada, Kenji Ohmori
- Organizer
  International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] チャネル断面の角に注目したナノワイヤトランジスタの電気特性評価2011
- Author(s)
  佐藤創志、角嶋邦之、Parhat Ahmet、大毛利健治、名取研二、山田啓作、岩井洋
- Organizer
  第16回ゲートスタック研究会
- Place of Presentation
  東京
- Year and Date
  2011-01-23
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO2/SiO2 Gate-stack MOSFETs2011
- Author(s)
  T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
- Organizer
  International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Effect of Substrate Biasing on Low-Frequency Noise in n-MOSFETs for Different Impurity Concentrations2011
- Author(s)
  Ranga Hettiarachchi, Takeo Matsuki, Wei Feng, Keisaku Yamada, Kenji Ohmori
- Organizer
  International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] デバイス評価に向けたSiナノワイヤーの発光測定2011
- Author(s)
  櫻井蓉子、大毛利健治、山田啓作、角嶋邦之、岩井洋、白石賢二、野村晋太郎
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] シリコンナノワイヤトランジスタの電気特性の絶縁膜厚依存性2011
- Author(s)
  佐藤創志、角嶋邦之、Ahmet Parhat、大毛利健治、名取研二、山田啓作、岩井洋
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-23
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Siナノワイヤトランジスタの電気特性の断面形状依存性2010
- Author(s)
  佐藤創志、新井英明、角嶋邦之、大毛利健治、岩井洋、山田啓作, 他
- Organizer
  春期第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Siナノワイヤトランジスタの作製プロセスと電気特性の断面形状依存性2010
- Author(s)
  佐藤創志、新井英朗、角嶋邦之、大毛利健治、山田啓作、岩井洋, 他
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  静岡県三島市
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Suicides exist in Nature2010
- Author(s)
  T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  サンフランシスコ、米国
- Year and Date
  2010-12-07
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Si Nanowire Device and its Modeling2010
- Author(s)
  H.Iwai, K.Natori, K.Kakushima, K.Shiraishi, J.Iwata, A.Oshiyama, K.Yamada, K.Ohmori
- Organizer
  15th International Conference on Simulation of Semicon ductor Processes and Devices
- Place of Presentation
  ボローニャ、イタリア
- Year and Date
  2010-09-06
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010
- Author(s)
  T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
- Organizer
  IEDM 2010
- Place of Presentation
  San Francisco USA
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability2010
- Author(s)
  S.Sato, Y.Lee, K.Kakushima, P.Ahmet, K.Ohmori, K.Natori, K.Yamada, H.Iwai
- Organizer
  40th European Solid-State Device Research Conference
- Place of Presentation
  セビリア、スペイン
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析2010
- Author(s)
  佐藤創志、角嶋邦之、パールハットアヘメト、大毛利健治、名取研二、岩井洋、山田啓作
- Organizer
  電子情報通信学会SDM研究会6月研究会
- Place of Presentation
  東京
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Fabrication of Gatearound Si Nanowire Transistors for Characterizing Carrier Transport2009
- Author(s)
  Kenji Ohmori, S. Sato, H. Kamimura, H. Iwai. K. Yamada, et.al.
- Organizer
  Mini-colloquium for Nano CMOS and Nanowire 2009
- Place of Presentation
  Tokyo Institute of Technology
- Year and Date
  2009-02-21
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位測定2009
- Author(s)
  佐藤創志、上村英之、角嶋邦之、大毛利健治、山田啓作、岩井洋、他
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Effect of carrier transport on threshold voltage variability in Si MOSFET2009
- Author(s)
  K.Ohmori, Y.Ohkura, K.Shiraishi, K.Yamada
- Organizer
  The 14th International Conference of Modulated Semiconductor Structures(MSS-14)
- Place of Presentation
  Kobe,Japan
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Fabrication of Si nanowira FETs and their Characteristics2009
- Author(s)
  K.Kakushima, S.Sato, K.Ohmori, H.Iwai, K.Yamada
- Organizer
  G-COE PRICE International Symposium on Silicon Nanodevices in 2030 : Prospects by World' s Leading Scientists
- Place of Presentation
  Tokyo Institute of Technology
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration2009
- Author(s)
  S.Sato, K.Kaushima, K.Ohmori, K.Yamada, N.Iwai, et al.
- Organizer
  39th European Solid-State Device Research Conference(ESSDERC)
- Place of Presentation
  Athens, Greece
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] アモルファス金属材料のLSIへの応用2008
- Author(s)
  山田啓作、大毛利健治、知京豊裕
- Organizer
  早稲田大学ナノテクノロジーフォーラム・「金属ガラス」イノベーションフォーラム
- Place of Presentation
  早稲田大学
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究2008
- Author(s)
  佐藤創志、大毛利健治、角嶋邦之、山田啓作、岩井洋、他
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035013
[Presentation] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008
- Author(s)
  (Invited) K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  213th Meeting of The Electrochemical Society
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2008-05-20
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes2007
- Author(s)
  K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
- Organizer
  International Electron Devices Meeting
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-12-11
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] C添加による金属ゲート材料の結晶構造制御とアモルファス化2007
- Author(s)
  大毛利健治、細井卓治、渡部平司、山田啓作、知京豊裕
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19026014
[Presentation] Landscape of Combinatorial Materials Exploration and Materials Informatics2007
- Author(s)
  Chikyow Toyohiro, T. Nagata, N. Umezawa, M. Yoshitake, K. Ohmori, T. Yamada, M. Lippma and H. Koinuma
- Organizer
  2007 MRS Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2007-11-26
- Data Source
  KAKENHI-PROJECT-19026014

1. CHIKYOW Toyohiro (10354333)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
2. 大毛利健治 (00421438)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
3. ENDOH Tetsuo (00271990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SUEMITSU Maki (00134057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NAKAYAMA Takashi (70189075)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
6. SHINADA Takahiro (30329099)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

YAMADA Keisaku 山田 啓作

Research Projects

Research Products

Co-Researchers

超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011

Author(s)

Journal Title

Data Source

[Journal Article] Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry2011

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs2011

Author(s)

Journal Title

Data Source

[Journal Article] Structural effect of channel cross-section on the gate capacitance of Silicon nanowire field-effect transistors2011

Author(s)

Journal Title

Data Source

[Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HtO2/interface-layer gate-stack MOSFETs2011

Author(s)

Journal Title

Data Source

[Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011

Author(s)

Journal Title

Data Source

[Journal Article] Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration2010

Author(s)

Journal Title

Data Source

[Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks2010

Author(s)

Journal Title

Data Source

[Journal Article] Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

Author(s)

Journal Title

Data Source

[Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

Author(s)

Journal Title

Data Source

[Patent] Siナノワイヤのシリサイドの形成方法2010

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Presentation] Silicon-on-Insulator Thickness Dependence of Photoluminescence from Electron-Hole Droplet2011

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO2/SiO2 Gate-stack MOSFETs2011

YAMADA Keisaku 山田啓作