suemitsu maki 末光眞希

… Alternative Names

Researcher Number	00134057
Other IDs
Affiliation (Current)	2021: 宮城学院女子大学, その他部局, 学長
Affiliation (based on the past Project Information) *help	2018: 東北大学, 電気通信研究所, 名誉教授 2008 – 2017: Tohoku University, 電気通信研究所, 教授 2004 – 2007: 東北大学, 学際科学国際高等研究センター, 教授 1994 – 2003: 東北大学, 電気通信研究所, 助教授 1999: 東北大学, 電子通信研究所, 助教授 1990 – 1991: 東北大学, 電気通信研究所, 助教授
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties / 表面界面物性 / Functional materials/Devices / Applied materials science/Crystal engineering / Applied physics and engineering and related fields Except Principal Investigator Science and Engineering / Thin film/Surface and interfacial physical properties / Electron device/Electronic equipment / Nanomaterials/Nanobioscience … More
Keywords	Principal Investigator グラフェン / CVD / 炭化ケイ素 / SiC / 光電子分光 / エピタキシャルグラフェン / 3C-SiC / ヘテロエピタキシ / 積層欠陥 / 転位 … More Except Principal Investigator グラフェン / 電子物性 / 電界効果トランジスタ / 結晶成長 / 光電子分光 / Si(100) / RHEED / トランジスタ / 人工IV族半導体 / シリコンゲルマニウム / 光エレクトロニクス / 光物性 / 電界効果型トランジスタ / 電界効果型トランジス / 発光ダイオード / CMP / 低温Si層 / SiGe / 変調ドーピング / 島状成長 / 自己触媒 / リン吸着デジタル制御 / 初期酸化 / 半導体デバイス / 集積回路 / ナノデバイス / シリコン結晶シリコンデバイス / 不純物ドープ / 表面科学 / 電子デバイス / 電子輸送 / シリコン / ひずみ / 移動度 / ナノ電子物性科学 / 半導体 / シリコン結晶 / シリコンデバイス / ナノ構造形成 / 制御 / 表面・界面物性 / ナノ材料 / テラヘルツ / レーザー / 電流注入 / プラズモン / ポラリトン / 誘導放出 / ボトムアップ / テラへルツ / 光学励起 / 極高真空 / アルミニウム真空 / チタンサブリメ-ションポンプ / 鏡面化表面処理 / 超高真空 / ガス放出率 / Extrahigh Vacuum / Aluminum-Alloy Vacuum System / Titan Sublimation Pump / mirror-polished surface / 薄膜成長 / 紫外光電子分光 / 振動 / その場観察 / リアルタイム / 光電子強度 / Si (100) / epitaxial growth / photoelectron spectroscopy / oscillation / in-situ observation / real-time measurement / photoelectron oscillation / 超音波マイクロスペクトロスコピー / LFB超音波顕微鏡 / V(z)曲線解析法 / 漏洩弾性表面波速度 / 電子デバイス材料評価 / デバイス作製プロセス評価 / 層状構造試料 / 音響的均一性 / 漏洩弾性表面波 / 半導体材料評価 / Ultrasonic microspectroscopy / Line-focus-beam acoustic microscopy / V(z) curve analysis / Leaky surface acoustic wave velocity / Electronics materials / Device fabrication process / Layered structures / Acoustic inhomogeneity / 接合 / 高品質SiC単結晶薄膜 / オペランド / X線 / 二次元原子薄膜 / トポロジカル絶縁体 / 顕微 / 顕微分光 Less

Fabrication of quasi-free-standing epitaxial graphene to realize graphene-based devicesPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Applied physics and engineering and related fields
- Research Institution
  Tohoku University
Growth of high quality graphene using wafer bonding and high-frequency devices based on a new principle
- Principal Investigator
  
  Fukidome Hirokazu
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Operando spectromicroscopy that bridges the gap betwenn material properties and device performances of 2D materials
- Principal Investigator
  
  Fukidome Hirokazu
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronicsPrincipal Investigator
- Principal Investigator
  
  Suemitsu Maki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Innovation of CMOS process using crystallographic orientation during multiple-layer epi-growthPrincipal Investigator
- Principal Investigator
  
  Suemitsu Maki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Creation of graphene terahertz lasers
- Principal Investigator
  
  OTSUJI Taiichi
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBONPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Fabrication of ordered array structure using strained one-dimensional structure of Si(110)
- Principal Investigator
  
  ASAOKA Hidehito
- Project Period (FY)
  2008 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Japan Atomic Energy Agency
新奇量子構造SiGeナノハットおよびナノリングの自己組織的形成Principal Investigator
- Principal Investigator
  
  末光眞希
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Oxidation kinetics of Si(110) surface and electrical properties of the oxide as a basis for next-generation CMOS devicesPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
矩形断面を有する金属酸化物ナノチューブの堆積制御と物性探索Principal Investigator
- Principal Investigator
  
  末光眞希
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Functional materials/Devices
- Research Institution
  Tohoku University
SURFACE CHEMISTRY DURING SiC EPITAXIAL GROWTH USING ORGANO-SILANESPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  TOHOKU UNIVERSITY
人工IV族半導体の形成と光・電子物性制御
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Surface chemistry of hydrogen on Si surfacesPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  TOHOKU UNIVERSITY
Ultrasonic Microspectroscopy for High-Precision Surface Characterization of Substrates for Electronics Devices
- Principal Investigator
  
  KUSHIBIKI Jun-ichi
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
In-situ Observation of Atomic Layr Epitaxy by Photoelectron Oscillation
- Principal Investigator
  
  ENTA Yoshiharu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Study on the semi-insulating mechanism of undoped GaAsPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki, 末光真希
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  Tohoku University
The Study of Synchrotron-Radiation-Stimulated Surface Chemical Reactiions on Semiconductors by Surface Electron SpectroscopyPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Maki, 宮本信雄
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of aluminum-alloy extrahigh-vacuum (XHV) systems featured by new surface treatments
- Principal Investigator
  
  MIYAMOTO Nobuo
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  物理計測・光学
- Research Institution
  Tohoku University

[Book] グラフェンが拓く材料の新領域2012
- Author(s)
  末光眞希, 第一章第4節エピタキシャルグラフェン法
- Total Pages
  233
- Publisher
  エヌ・ティー・エス、東京
- Data Source
  KAKENHI-PROJECT-23000008
[Book] グラフェンの最先端技術と拡がる応用 ―グラフェンの材料科学、成長・合成技術、各種デバイス応用―2012
- Author(s)
  末光哲也, 第４章第１節"グラフェンチャネルトランジスタ"
- Total Pages
  242
- Publisher
  フロンティア出版, 東京
- Data Source
  KAKENHI-PROJECT-23000008
[Book] グラフェンの最先端技術と拡がる応用2012
- Author(s)
  末光眞希, 第3章グラフェンの合成技術と応用展開　６．SiC基板上のエピタキシャルグラフェン成長
- Total Pages
  242
- Publisher
  フロンティア出版、東京
- Data Source
  KAKENHI-PROJECT-23000008
[Book] Silicon-germanium(SiGe)nanostructures : Production, properties and applications in electronics, Chapter2011
- Author(s)
  M. Suemitsu and S. Filimonov
- Total Pages
  3
- Publisher
  Woodhead Publishing
- Data Source
  KAKENHI-PROJECT-21360017
[Book] Silicon-germanium(SiGe) nanostructures : Production, properties and applications in electronics, Chapter 32011
- Author(s)
  M.Suemitsu, S.Filimonov
- Publisher
  Woodhead Publishing
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications2019
- Author(s)
  K. S. Kim, H. Fukidome, M. Suemitsu
- Journal Title
  
  Sensors and Materials, (accepted, 2019).
  
  Volume: 31
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K19065
[Journal Article] A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air2018
- Author(s)
  Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu
- Journal Title
  
  Carbon
  
  Volume: 130 Pages: 792-798
- DOI
  10.1016/j.carbon.2018.01.074
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065, KAKENHI-PUBLICLY-16H00953, KAKENHI-PROJECT-16H06361, KAKENHI-PROJECT-17J04947
[Journal Article] Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing2017
- Author(s)
  Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 6S1 Pages: 06GF09-06GF09
- DOI
  10.7567/jjap.56.06gf09
- NAID
  210000147883
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065, KAKENHI-PROJECT-16H06361, KAKENHI-PROJECT-15H03560
[Journal Article] Fabrication of Multi-Layer Bi2Se3 Devices and Observation of Anomalous Electrical Transport Behaviors2017
- Author(s)
  G. Venugopal, G.-H. Park, M. Suemitsu and H. Fukidome
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 68 Pages: 128-132
- DOI
  10.1016/j.mssp.2017.06.010
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06361, KAKENHI-PROJECT-15H03560
[Journal Article] Evaluations of crystal defects of 3C-SiC (-1-1-1) film on Si (110) substrate2016
- Author(s)
  Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 印刷中
- DOI
  10.1002/pssa.201532675
- Description
  印刷中
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Observation of nanoscopic charge-transfer region at metal/MoS2 interface2016
- Author(s)
  75.R. Suto, G. Venugopal. K. Tashima, N. Nagamura, K. Horiba, M. Suemitsu, M. Oshima, and H. Fukidome
- Journal Title
  
  Materials Research Express
  
  Volume: 3 Pages: 075004-075004
- DOI
  10.1088/2053-1591/3/7/075004
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03560, KAKENHI-PROJECT-14F04357, KAKENHI-PROJECT-15K17463
[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC (-1-1-1) on Si (110)2016
- Author(s)
  Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 67 Pages: 51-53
- DOI
  10.1016/j.diamond.2016.02.020
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT2015
- Author(s)
  T. Watanabe, T. Kawasaki, A. Satou, S.A. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, W. Knap, H. Minamide, H. Ito, Y.M. Meziani, V.V. Popov, and T. Otsuji
- Journal Title
  
  Proc. SPIE
  
  Volume: 9362
- DOI
  10.1117/12.2079184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] SiNゲートスタックによる高キャリア移動度グラフェンチャネルFET2015
- Author(s)
  玉虫元, 菅原健太, Mastura binti Hussin, 末光哲也, 須藤亮太, 吹留博一, 末光眞希, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015
- Author(s)
  須藤亮太、舘野泰範、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry2015
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, and Yasuo Cho
- Journal Title
  
  PHYSICAL REVIEW LETTERS
  
  Volume: 114 Pages: 226103-226103
- DOI
  10.1103/physrevlett.114.226103
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K04673, KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23226008
[Journal Article] Correlation between the residual stress in 3C-SiC/Si epifilm and the quality of epitaxial graphene formed thereon2015
- Author(s)
  R Bantaculo, H Fukidome and M Suemitsu
- Journal Title
  
  IOP Conf. Series : Materials Science and Engineering
  
  Volume: 79
- DOI
  10.1088/1757-899x/79/1/012004
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Si基板上エピタキシャルグラフェンのNi援用低温形成とリアルタイム/角度分解光電子分光によるグラフェン化機構評価2015
- Author(s)
  長谷川美佳、須藤亮太、菅原健太、三本菅正太、原本直樹、寺岡有殿、吉越章隆、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band2015
- Author(s)
  T. Kawasaki, K. Sugawara, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, K. Kawahara, H. Ago, and T. Otsuji
- Journal Title
  
  Solid State Electron
  
  Volume: 103 Pages: 216-221
- DOI
  10.1016/j.sse.2014.07.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 非対称二重格子ゲートHEMTによるテラヘルツ波検出の周波数特性2015
- Author(s)
  佐藤昭, Stephane Boubanga Tombet, 渡辺隆之, 川﨑鉄哉, 糟谷文月, 末光哲也, Denis V. Fateev, Vyacheslav V. Popov, 南出泰亜, 伊藤弘昌, Dominique Coquillat, Wojciech Knap, Guillaume Ducournau, Yahya Meziani, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015
- Author(s)
  須藤亮太、舘野泰範、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] グラフェンチャネルFETのサブテラヘルツ帯ミキサ応用2015
- Author(s)
  菅原健太, 川﨑鉄哉, Binti Hussin Mastura, 玉虫元, 末光眞希, 吹留博一, 可児淳一, 寺田純, 桑野茂, 岩月勝美, 末光哲也, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Emergence of Pseudoelectromagnetic Field in Epitaxial Graphene on Microfabricated Substrate2015
- Author(s)
  吹留博一、小嗣真人、川合祐輔、井出隆之、大河内拓雄、木下豊彦、末光眞希
- Journal Title
  
  Hyomen Kagaku
  
  Volume: 34 Issue: 7 Pages: 380-384
- DOI
  10.1380/jsssj.34.380
- NAID
  10031184986
- ISSN
  0388-5321, 1881-4743
- Year and Date
  2015-01-02
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003
[Journal Article] In Situ SR-XPS Observation of Ni-assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si2015
- Author(s)
  Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu
- Journal Title
  
  Nanoscale Research Letters(Nano express)
  
  Volume: 10 Pages: 421-426
- DOI
  10.1186/s11671-015-1131-9
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420289, KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C-SiC : Ways to Wake it up as a Practical Semiconductor2015
- Author(s)
  Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 108-114
- DOI
  10.4028/www.scientific.net/msf.821-823.108
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure2015
- Author(s)
  Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, and Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 806 Pages: 89-93
- DOI
  10.4028/www.scientific.net/msf.806.89
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] 微量O2添加アニール法によるSi(111)及びSi(100)基板上エピタキシャルグラフェン2015
- Author(s)
  横山大、今泉京、吹留博一、吉越章隆、寺岡有殿、末光眞希
- Journal Title
  
  SPring-8/SACLA利用研究成果集
  
  Volume: 3 Pages: 356-359
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015
- Author(s)
  須藤亮太、舘野泰範、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] High carrier mobility graphene-channel FET using SiN gate stack2015
- Author(s)
  G. Tamamushi, K. Sugawara, M. B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, and T. Otsuji
- Journal Title
  
  The 42nd International Symposium on Compound Semiconductors Proc.
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 接触抵抗改善によるグラフェンFETの高性能化2015
- Author(s)
  小岩匡, 岡謙吾, 末光哲也, 尾辻泰一, 内野俊
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] InAlN/GaN HEMTsにおける傾斜型フィールドプレートによるドレイン空乏領域長への影響2015
- Author(s)
  安川奈那, 畠山信也, 吉田智洋, 尾辻泰一, 末光哲也
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Si基板上エピタキシャルグラフェンのNi援用低温形成とリアルタイム/角度分解光電子分光によるグラフェン化機構評価2015
- Author(s)
  長谷川美佳、須藤亮太、菅原健太、三本菅正太、原本直樹、寺岡有殿、吉越章隆、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] SiCN鋳型プロセスを用いた傾斜フィールドプレート構造を持つInGaAs系HEMTの作製とその特性2015
- Author(s)
  吉田智洋, 畠山信也, 安川奈那, 尾辻泰一, 末光哲也
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Geometrical dependence of ultrahigh responsivity and its broadband characteristics of InP-based asymmetric dual-grating-gate high-electron-mobility transistors2015
- Author(s)
  A. Satou, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, D.V. Fateev, V.V. Popov, Y.M. Meziahi, and T. Otsuii
- Journal Title
  
  OTST : Int. Conf. on Optical Terahertz Science and Technology Dig
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  EXMATEC 2014 Book of Abstracts
  
  Volume: 1 Pages: 197-198
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] RF characteristics of AlGaN/GaN HEMTs with slant field plates2014
- Author(s)
  Shinya Hatakeyama, Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  ISCS : the 41st Int. Symp. On Compound Semiconductors Dig
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa, Maki Suemitsu
- Journal Title
  
  ECSCRM2014: European Conf. on Silicon Carbide and Related Materials Abstracts Book
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] High-Resolution Imaging of Hydrogen-Intercalated Graphene on 4H-SiC(0001) Using Non-Contact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, H. Fukidome, K. Funakubo, M. Suemitsu, Y. Cho
- Journal Title
  
  ICN+T 2014 Abstract Book
  
  Volume: 1 Pages: 58-58
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  EXMATEC 2014 Book of Abstracts
  
  Volume: 1 Pages: 197-198
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book
  
  Volume: 1 Pages: 17-17
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  ECOSS30 : the 30th European Conference on Surface Science Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェンとNiの界面反応の微視的「その場」観察2014
- Author(s)
  長谷川美佳、吹留博一、小嗣真人, 大河内拓雄, 木下豊彦、伊藤俊、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Epitaxial Graphene on Silicon Substrates : Tailoring the Properties through Crystal Faces2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book
  
  Volume: 1 Pages: 17-17
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Improving Graphene Field-Effect Transistor Performance by Self-Aligned Source/Drain Process with Aluminum Sacrificial Layer2014
- Author(s)
  M.B. Hussin, K. Sugawara, T. Suemitsu, and T. Otsuji
- Journal Title
  
  RPGR 2014 : the 6th Int. Conf. on Recent Progress on Graphene Research Proc
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with highly asymmetric resonant cavities2014
- Author(s)
  T. Watanabe, A. Satou, T. Suemitsu, W. Knap, V.V. Popov, V. Ryzhii, M. Shur, and T. Otsuji
- Journal Title
  
  RJUS TeraTech-2014 : The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc
  
  Volume: 1 Pages: 39-40
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] InGaAsチャネルHEMT及びグラフェンチャネルFETを用いたミリ波帯フォトミキシング2014
- Author(s)
  川崎鉄哉, 吉田智洋, 菅原健太, Adrian Dobroiu, 渡辺隆之, 杉山弘樹, 若生洋由希, 可児淳一, 寺田純, 桑野茂, 吾郷浩樹, 河原憲次, 岩月勝美, 末光哲也, 尾辻泰一
- Journal Title
  
  信学技報
  
  Volume: ED2014 Pages: 9-13
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Detection of terahertz and mid-infrared radiations by InP-based asymmetric dual-grating-gate HEMTs2014
- Author(s)
  D. Coquillat, P. Zagrajek, N. Dyakonova, K. Chrzanowski, J. Marczewski, Y. Kurita, A. Satou, K. Kobayashi, S. Boubanga Tombet, V.V. Popov, T. Suemitsu, T. Otsuji, W. Knap
- Journal Title
  
  IRMMW-THz : Int. Conf. on Infrared, Millimeter, and Terahertz Waves Dig
  
  Volume: 1 Pages: 1-2
- DOI
  10.1109/irmmw-thz.2014.6956522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book
  
  Volume: 1 Pages: 17-17
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates2014
- Author(s)
  Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 9 Pages: 096501-096501
- DOI
  10.7567/apex.7.096501
- NAID
  210000137238
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24560392
[Journal Article] Ultrahigh Sensitive Sub-Terahertz Detection by InP-Based Asymmetric Dual-Grating-Gate High-Electron-Mobility Transistors and Their Broadband Characteristics2014
- Author(s)
  Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S.A. Boubanga-Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
- Journal Title
  
  Applied Physics Letter
  
  Volume: 104 Pages: 251114-251114
- DOI
  10.1063/1.4885499
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-26820123
[Journal Article] 微細加工Si基板上GOSグラフェンの電荷移動領域観察2014
- Author(s)
  田島圭一郎、井出隆之、永村直佳、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa, Maki Suemitsu
- Journal Title
  
  ECSCRM2014: European Conf. on Silicon Carbide and Related Materials Abstracts Book
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Si (111)基板上に炭素との固相反応で生成したSiC薄膜の評価2014
- Author(s)
  細谷友崇, 三本菅正太, 伊藤俊, 吹留博一, 長澤弘幸, 末光眞希
- Journal Title
  
  第61回応用物理春季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Impact of drain conductance in InGaAs-HEMTs operated in a class-F amplifier2014
- Author(s)
  T. Yoshida, M. Oyama, K. Watanabe, Y. Umeda, T. Otsuji, and T. Suemitsu
- Journal Title
  
  LEC : 2014 Lester Eastman Conference on High Performance Devices Proc
  
  Volume: 1
- DOI
  10.1109/lec.2014.6951560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth2014
- Author(s)
  S. Sambonsuge, L.N. Nikitina, Yu.Yu. Hervieu, M. Suemitsu, S.N. Filimonov
- Journal Title
  
  Russian Physics Journal
  
  Volume: 56 Pages: 1439-1444
- DOI
  10.1007/s11182-014-0197-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091
[Journal Article] 微細加工Si基板上GOSグラフェンの電荷移動領域観察2014
- Author(s)
  田島圭一郎、井出隆之、永村直佳、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  ECOSS30:　the 30th European Conference on Surface Science Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] MoS2 FETにおける金属-チャネル界面領域での電荷移動観察2014
- Author(s)
  須藤亮太、田島圭一郎、安川奈那、北田祐太、永村直佳、本間格、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] MoS2 FETにおける金属－チャネル界面領域での電荷移動観察2014
- Author(s)
  須藤亮太、田島圭一郎、安川奈那、北田祐太、永村直佳、本間格、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN2014
- Author(s)
  Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  Solid-State Electronics
  
  Volume: 101 Pages: 63-69
- DOI
  10.1016/j.sse.2014.06.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24560392
[Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  M. Suemitsu, S.N. Filimonov
- Journal Title
  
  Asia-Pacific Symposium on Solid Surfaces Abstracts Book
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Observing hot carrier distribution in an n-type epitaxial graphen on a SiC substrate2014
- Author(s)
  T. Someya, F. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh. Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104
- DOI
  10.1063/1.4871381
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23226003, KAKENHI-PROJECT-23560020, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-26287061, KAKENHI-PROJECT-25220707
[Journal Article] Noncontact scanning nonlinear dielectric microscopy study of graphene on 4H-SiC(0001) and its hydrogen-intercalation2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  NC-AFM 2014 Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  M. Suemitsu, S. N. Filimonov
- Journal Title
  
  Asia-Pacific Symposium on Solid Surfaces Abstracts Book
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  EXMATEC 2014 Book of Abstracts
  
  Volume: 1 Pages: 197-198
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Current Driven Detection of Terahertz Radiation in Dual-Grating-Gate Plasmonic Detector2014
- Author(s)
  S.A. Boubanga Tombet, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, D.V. Fateev, V.V. Popov, and T. Otsuji
- Journal Title
  
  Applied Physics Letter
  
  Volume: 104 Pages: 262104-262104
- DOI
  10.1063/1.4886763
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-26820123
[Journal Article] Controlling Planar Defects in 3C-SiC : Ways to Wake it upDevelop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa, Maki Suemitsu
- Journal Title
  
  ECSCRM2014 : European Conf. on Silicon Carbide and Related Materials Abstracts Book
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Ultrahigh sensitive sub-terahertz plasmonic detector based on asymmetri ual-grating-gate HEMT2014
- Author(s)
  A. Satou, Y. Kurita, G. Ducournau, D. Coquillat, K. Kobayashi, S. Boubanga Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
- Journal Title
  
  RJUS TeraTech-2014 : The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc
  
  Volume: 1 Pages: 21-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Comparative Study on Pristine and Hydrogen-Intercalated Graphene on 4H-SiC(0001) Surface Using Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  MRS Fall Meeting 2014 Abstracts Book
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial graphene formation on 3C-SiC/Si thin films2014
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, and Toyohiko Kinoshita
- Journal Title
  
  Journal of Physics D
  
  Volume: 4 Pages: 37131-5
- DOI
  10.1088/0022-3727/47/9/094016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091
[Journal Article] High-Resolution Imaging of Hydrogen-Intercalated Graphene on 4H-SiC(0001) Using Non-Contact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, H. Fukidome, K. Funakubo, M. Suemitsu, Y. Cho
- Journal Title
  
  ICN+T 2014 Abstract Book
  
  Volume: 1 Pages: 58-58
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Noncontact scanning nonlinear dielectric microscopy study of graphene on 4H-SiC(0001) and its hydrogen-intercalation2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  NC-AFM 2014 Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs2014
- Author(s)
  T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
- Journal Title
  
  Solid State Electron
  
  Volume: 102 Pages: 93-97
- DOI
  10.1016/j.sse.2014.06.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  M. Suemitsu, S. N. Filimonov
- Journal Title
  
  Asia-Pacific Symposium on Solid Surfaces Abstracts Book
  
  Volume: 1
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25600091
[Journal Article] Comparative Study on Pristine and Hydrogen-Intercalated Graphene on 4H-SiC(0001) Surface Using Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  MRS Fall Meeting 2014 Abstracts Book
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] F級増幅器におけるInGaAs-HEMTゲート寄生遅延時間の影響2014
- Author(s)
  吉田智洋, 小山雅史, 渡邊邦彦, 楳田洋太郎, 尾辻泰一, 末光哲也
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 傾斜型フィールドプレートを用いたAlGaN/GaN HEMTsのRF特性2014
- Author(s)
  畠山信也, 小林健悟, 吉田智洋, 尾辻泰一, 末光哲也
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Pinpoint Operando Analysis of the Electronic States of a Graphene Transistor by Using Photoelectron Nanospectroscopy2014
- Author(s)
  Hirokazu Fukidome, Kousuke Nagashio, Naoka Nagamura, Keiichiro Tashima, Kazutoshi Funakubo, Koji Horiba, Maki Suemitsu, Akira Toriumi, Masaharu Oshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 6 Pages: 065101-065101
- DOI
  10.7567/apex.7.065101
- NAID
  210000137137
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PUBLICLY-26107503
[Journal Article] グラフェンとNiの界面反応の微視的「その場」観察2014
- Author(s)
  長谷川美佳、吹留博一、小嗣真人, 大河内拓雄, 木下豊彦、伊藤俊、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication2014
- Author(s)
  Hirokazu Fukidome, Takayuki Ide, Yusuke Kawai, Toshihiro Shinohara, Naoka Nagamura, Koji Horiba, Masato Kotsugi, Takuo Ohkochi, Toyohiko Kinoshita, Hiroshi Kumighashira, Masaharu Oshima, Maki Suemitsu
- Journal Title
  
  Scientific Reports
  
  Volume: 4 Pages: 5173-5173
- DOI
  10.1038/srep05173
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003, KAKENHI-PROJECT-25286053, KAKENHI-PUBLICLY-26107503
[Journal Article] グラフェンチャネルネルFETを用いたミリ波帯フォトミキサー2014
- Author(s)
  菅原健太, 江藤隆紀, 川崎鉄哉, Mastura Hussin, 若生洋由希, 末光哲也, 尾辻泰一, 吾郷浩樹, 河原憲治, 深田陽一, 可児淳一, 寺田純, 吉本直人
- Journal Title
  
  第61回応用物理学会春季学術講演会講演予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] An Improved Self-Aligned Ohmic-Contact Process for Graphene-Channel Field-Effect Transistors2014
- Author(s)
  Hussin Mastura, Kenta Sugawara, Tetsuya Suemitsu, Taiichi Otsuji
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene materials and devices for terahertz science and technology2013
- Author(s)
  T. Otsuji, M. Suemitsu, and V. Ryzhii
- Journal Title
  
  APMC : Asia-Pacific Microwave Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Si (110)基板上3C-SiC (111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM評価2013
- Author(s)
  三本菅正太, 長澤弘幸, Sergey Filimonov, 伊藤駿, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェンテラヘルツレーザーとフォトニックデバイス応用の可能性2013
- Author(s)
  尾辻泰一, 佐藤　昭, マキシムリズィー, 佐野栄一, 末光眞希, ヴィクトールリズィー
- Journal Title
  
  電子情報通信学会2013年総合大会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Dielectric-tuned Diamondlike Carbon Materials for an Ultrahigh-speed Self-aligned Graphene Channel Field Effect Transistor2013
- Author(s)
  S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  Advances in Science and Technology
  
  Volume: 77 Pages: 270-275
- DOI
  10.4028/www.scientific.net/ast.77.270
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C- SiC (111)/Vicinal Si (111) Substrate2013
- Author(s)
  N. Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
- Journal Title
  
  ALC'13:9th International Symposium on Atomic Level Characterizations for New Materials and Devices' 13
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 微傾斜Si (111)基板使用によるSi基板上エピタキシャルグラフェンの高品質化2013
- Author(s)
  原本直樹, 猪俣州哉, 三本菅正太, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] From 3C-SiC growth to graphene formation using 4H-AlN (0001)/Si (111) heterostructure2013
- Author(s)
  Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
- Journal Title
  
  2013 JSAP-MRS Joint Symposia : Symposium C
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene Formation on 3C-SiC (111)/4H-AlN (0001) Double Layer Stacking on Si (111) Substrates2013
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Journal Title
  
  The International Conference on Silicon Carbide and Related Materials (ICSCRM2013)
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Site Selective Epitaxy of Graphene on Si Wafers2013
- Author(s)
  H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
- Journal Title
  
  Proceeding of the IEEE,Proceeding of the IEEE
  
  Volume: 101 Pages: 1557-1566
- DOI
  10.1109/jproc.2013.2259131
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003, KAKENHI-PROJECT-25286053
[Journal Article] Graphene-channel FET with -doped diamondlike carbon top-gate dielectrics2013
- Author(s)
  T. Eto, S. Takabayashi, Y. Kurita, M. Yang, H. Hayashi, R. Jesko, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  The 9th International Thin-Film Transistor Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Techniques2013
- Author(s)
  M. -H. Jung, G. -H. Park, T. Yoshida, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
- Journal Title
  
  Proceeding of the IEEE,Proceeding of the IEEE
  
  Volume: 101 Pages: 1603-1608
- DOI
  10.1109/jproc.2013.2258651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053
[Journal Article] グラフェン上Al203ゲート絶縁膜中の「その場」ラマン分光観察2013
- Author(s)
  須藤亮太, 佐藤良, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-Channel FETs with DLC gate insulator for Photonic Frequency Double-Mixing Conversion over the Sub-THz Band2013
- Author(s)
  T. Kawasaki, T. Eto, K. Kojima, Y. Kurita, Y. Yabe, H. Sugiyama, T. Watanabe, A. Dobroiu, S. Takabayashi, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji
- Journal Title
  
  RPGR2013 : Recent Progress on Graphene Research
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Direct observation of charge transfer region at interfaces in graphene devicve2013
- Author(s)
  Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102 Pages: 241604-241604
- DOI
  10.1063/1.4808083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24686039
[Journal Article] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces2013
- Author(s)
  S. N. Filimonov, Yu. Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
- Journal Title
  
  ACSIN-12&ICSPM21
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene FETs : Issues and Prospects2013
- Author(s)
  M. Suemitsu
- Journal Title
  
  AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices)
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact,Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact2013
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu & Toyohiko Kinoshita
- Journal Title
  
  Scientific Report
  
  Volume: 4 Pages: 3713-3713
- DOI
  10.1038/srep03713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] テラヘルツ通信を志向したダイヤモンドライクカーボンゲート絶縁膜を有するグラフェンFET2013
- Author(s)
  江藤隆紀，鷹林将，栗田裕記，楊猛，林広幸，イェシコラディック，小川修一, 高桑雄二，末光哲也，尾辻泰一
- Journal Title
  
  ゲートスタック研究会第18回研究会研究報告
  
  Volume: 1 Pages: 47-50
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Coherent Nanoscale Optical-Phonon Wavepacket in Graphene Layers2013
- Author(s)
  I. Katayama, K. Sato, S. Koga, J. Takeda, S. Hishita, H. Fukidome, M. Suemitsu, and M. Kitajim
- Journal Title
  
  Phys. Rev. B
  
  Volume: 88
- DOI
  10.1103/physrevb.88.245406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23241034, KAKENHI-PUBLICLY-25104712, KAKENHI-PROJECT-25800177
[Journal Article] Emerging graphene-based electronic & photonic devices, circuits, and systems2013
- Author(s)
  Towe E., Palacios, T. Suemitsu, M.
- Journal Title
  
  Proceeding of the IEEE
  
  Volume: 101 Pages: 1518-1521
- DOI
  10.1109/jproc.2013.2263615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 微細加工基板へのグラフェンのエピ成長による擬電磁場の創出2013
- Author(s)
  吹留博一、小嗣真人、川合祐輔、井出隆之、大河内拓雄、木下豊彦、末光眞希
- Journal Title
  
  表面科学
  
  Volume: 34 Pages: 380-384
- NAID
  10031184986
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286053
[Journal Article] Low-temperature Formation of Epitaxial Graphene On Silicon Substrate Using Ni silicidation2013
- Author(s)
  長谷川美佳, 菅原健太, 三本菅正太, 原本直樹, 須藤亮太, 吹留博一, 長澤弘幸, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Solution-processed Al203 for gate dielectrics in Top-Gated Graphene Field Effect Transistors2013
- Author(s)
  G. -H. Park, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu
- Journal Title
  
  MNC2013:26th International Microprocesses and Nanotechnology Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene on Silicon Substrates : Current Status and Perspective2013
- Author(s)
  Sai Jiao and Maki Suemitsu
- Journal Title
  
  Energy Materials Nanotechnology (EMN) East Workshop
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェン/SiC/SiバックゲートFET特性とSiC層厚の関係2012
- Author(s)
  江藤隆紀，鷹林将，三本菅正太，猪俣州哉，吹留博一，末光眞希，末光哲也，尾辻泰一
- Journal Title
  
  第73回応用物理学会学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Dielectric-tuned Diamondlike Carbon Materials for High-performance Self-aligned Graphene-channel Field Effect Transistors2012
- Author(s)
  S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  MRS Proceedings
  
  Volume: 1451 Pages: 185-190
- DOI
  10.1557/opl.2012.960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article] Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH$_{4}$ Pretreatment2012
- Author(s)
  Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 06FD10-06FD10
- DOI
  10.1143/jjap.51.06fd10
- NAID
  210000140726
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-based devices in terahertz science and technology2012
- Author(s)
  T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
- Journal Title
  
  J. Physi. D
  
  Volume: 45
- DOI
  10.1088/0022-3727/45/30/303001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23760300, KAKENHI-PUBLICLY-23104515
[Journal Article] Graphene materials and devices in terahertz science and technology2012
- Author(s)
  T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
- Journal Title
  
  MRS Bulletin
  
  Volume: 37 Pages: 1235-1243
- DOI
  10.1557/mrs.2012.241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23760300
[Journal Article] Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates2012
- Author(s)
  Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 06FD02-06FD02
- DOI
  10.1143/jjap.51.06fd02
- NAID
  210000140718
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Precise control of epitaxy of graphene by microfabricating SiC substrate2012
- Author(s)
  H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications2012
- Author(s)
  H. Fukidome, M. Kotsugi, T. Ohkouchi, A. Yoshigoe, Y. Teraoka, Y. Enta, T. Kinoshita, T. Suemitsu, T. Otsuji, and M. Suemitsu
- Journal Title
  
  MRS Spring Meeting Proc.
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Carrier remote doping effect in graphene-channel FET’s with diamondlike carbon gate dielectrics2012
- Author(s)
  S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  ISGD: International Symposium on Graphene Devices
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene2012
- Author(s)
  T. Otsuji, S. Boubanga-Tombet, A. Satou, M. Suemitsu, and V. Ryzhii
- Journal Title
  
  J. Infrared Milli. Terhertz Waves
  
  Volume: 33 Pages: 825-838
- DOI
  10.1007/s10762-012-9908-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Oxygen-plasma formation of alumina for a gate dielectric in graphene field effect transistors2012
- Author(s)
  G.H. Park, M.H. Jung, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu
- Journal Title
  
  ISGD: International Symposium on Graphene Devices
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] ダイヤモンドライクカーボン絶縁膜を用いたグラフェンFET2012
- Author(s)
  鷹林　将・楊　猛・小川修一・林　広幸・栗田裕記・高桑雄二・末光哲也・尾辻泰一
- Journal Title
  
  信学会電子デバイス研究会, 信学技報
  
  Volume: 112 Pages: 67-72
- NAID
  110009626397
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma- enhanced chemical vapor deposition2012
- Author(s)
  M. Yang, S. Ogawa, S. Takabayashi, T. Otsuji, and Y. Takakuwa
- Journal Title
  
  Thin Solid Films, Elsevier
  
  Volume: 523 Pages: 25-28
- DOI
  10.1016/j.tsf.2012.05.059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article] Temperature-Programmed Desorption Observation of Graphene-on-silicon Process2011
- Author(s)
  Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 7 Pages: 070102-070102
- DOI
  10.1143/jjap.50.070102
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017, KAKENHI-PUBLICLY-23104515
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si2011
- Author(s)
  Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, and Maki Suemitsu
- Journal Title
  
  Appled Phsics Express
  
  Volume: 4巻
- NAID
  10030153776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Temperature-Programmed Desorption Observation of Graphene-on-silicon Process2011
- Author(s)
  Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu
- Journal Title
  
  JJAP
  
  Volume: 50巻
- NAID
  210000139163
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations2011
- Author(s)
  H.Handa, R.Takahashi, S.Abe, K.Imaizumi, E.Saito, M.H.Jung, S.Ito, H.Fukidome, M.Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- NAID
  210000070339
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si2011
- Author(s)
  Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu
- Journal Title
  
  Appled Phsics Express
  
  Volume: 4
- NAID
  10030153776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001)Using Monomethylsilane2011
- Author(s)
  Eiji Saito, Sergey N. Filimonov, and Maki Suemitsu
- Journal Title
  
  JJAP
  
  Volume: 50巻
- NAID
  40017446817
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110)and 3C-SiC(100)virtual substrates2011
- Author(s)
  Hiroyuki Handa, Shun Ito, Hirokazu Fukidome and Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 711巻 Pages: 242-245
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110) and 3C-SiC(110) virtual substrates2011
- Author(s)
  Hiroyuki Handa, Shun Ito, Hirokazu Fukidome, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 711 Pages: 242-245
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Step bunching and step"rotation" in homoepitaxial growth of Si on Si(110)-16×22011
- Author(s)
  Arnold Alguno, Sergey N. Filimonov, Maki Suemitsu
- Journal Title
  
  Surface Science
  
  Volume: 605巻 Pages: 838-843
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Step bunching and step "rotation" in homoepitaxial growth of Si on Si(110)-16×22011
- Author(s)
  Arnold Alguno, Sergey N.Filimonov, Maki Suemitsu
- Journal Title
  
  Surface Science
  
  Volume: 605 Pages: 838-843
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations2011
- Author(s)
  H. Handa, R. Takahashi, S. Abe, K. Imaizumi, E. Saito, M. H. Jung, S. Ito, H. Fukidome and M. Suemitsu
- Journal Title
  
  JJAP
  
  Volume: 50巻
- NAID
  210000070339
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane2011
- Author(s)
  Eiji Saito, Sergey N.Filimonov, Maki Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- NAID
  40017446817
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Epitaxial growth processes of graphene on silicon substrates2010
- Author(s)
  Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, and Maki Suemitsu
- Journal Title
  
  JJAP
  
  Volume: 49巻
- NAID
  210000067872
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Epitaxial Growth Processes of Graphene on Silicon Substrates2010
- Author(s)
  Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Maki Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics 49
- NAID
  210000067872
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360017
[Journal Article] Step bunching and step "rotation" inhomoepitaxial growth of Si on Si(110)-16×22010
- Author(s)
  A.Alguno, S.N.Filimonov, M.Suemitsu
- Journal Title
  
  Surface Science 605巻
  
  Pages: 838-843
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photoemission spectroscopy2009
- Author(s)
  M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka
- Journal Title
  
  Journal of Vacuum Science & Technology B 27
  
  Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] Initial oxidation of Si(110) as studied by real-time synchrotron radiation x-ray photomission spectroscopy2009
- Author(s)
  M.Suemitsu, Y.Yamamoto, H.Togashi, Y.Enta, Yoshigoe, Y.Teraoka
- Journal Title
  
  J.Vac.Sci.Technol.B 27巻
  
  Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Initial oxidation of Si(110)as studied by real-time synchrotron-radiation x-ray photoemission spectroscopy2009
- Author(s)
  M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka
- Journal Title
  
  J.Vac.Sci.Technol B27(1)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] SR-PES and STM observation of metastable chemisorption state of oxygen on Si (110)-16×2 surface2008
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka, Maki Suemitsu
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 6232-6234
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] Bonding Structure of Ultrathin Oxides on Si(110) Surface2008
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Maki Suemitsu, Yuzuru Narita, Yuden Teraoka, Akitaka Yoshigoe
- Journal Title
  
  Materials Research Society Symposium proceeding 1074
  
  Pages: 50-58
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] Bonding Structure of Ultrathin Oxides on Si(110)Surface2008
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Maki Suemitsu, Yuzuru Narita, Yuden Teraoka, Akitaka Yoshigoe
- Journal Title
  
  Mater. Res. Soc. Symp. Proc.
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] Si(110)面上熱酸化膜形成時におけるSiサブオキサイド時間発展のXPSリアルタイム測定2008
- Author(s)
  山本喜久, 富樫秀晃, 今野篤史, 松本光正, 加藤篤, 齋藤英司, 末光眞希, 寺岡有殿, 吉越章隆
- Journal Title
  
  電子情報通信学会技術研究報告 108
  
  Pages: 65-70
- NAID
  10030999395
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] SR-PES and STM observation of metastable chemisorption state of oxygen on Si(1 1 0)-16x2 surface2008
- Author(s)
  Y. Yamamoto, H. Togashi, A. Kato, Y. Takahashi, A. Konno, Y. Teraoka, A. Yoshigoe, H. Asaoka, M. Suemitsu
- Journal Title
  
  Appl. Surf. Sci
  
  Volume: 254 Pages: 6232-6234
- DOI
  10.1016/j.apsusc.2008.02.148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20310064
[Journal Article] SR-PES and STM observation of metastable chemisorpion sate of oxygen Si(110)-16X2surface2008
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka, Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yuden Teraoka, AkitakMaki Suemitsu
- Journal Title
  
  Appl. Sur. Sci. 254
  
  Pages: 6232-6234
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] SR-PES and STM observation of metastable chemisorption state of oxygen on Si(110)-16x2 surface2008
- Author(s)
  Y.Yamamoto, H.Togashi,A.Kato, Y.Takahashi, A.Konno, Y.Teraoka, A.Yoshigoe, H.Asaoka, M.Suemitsu
- Journal Title
  
  Appl.Surf.Sci. 254
  
  Pages: 6232-6234
- Data Source
  KAKENHI-PROJECT-20310064
[Journal Article] Observation of Initial Oxidation on Si(110)-16×2 Surface by Scanning Tunneling Observation of Initial Oxidation on Si(110)-16×2Microscopy2007
- Author(s)
  Hideaki Togashi, Yuya Takahashi, Atsushi Konno, Hidehito Asaoka, Maki Suemitsu
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 3239-3243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] XPS and STM Studies on Initia1 Oxidation of Si(110)-16x22007
- Author(s)
  末光眞希
- Journal Title
  
  MRS Symposium H Proceedings 996
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] XPS and STM Studies on Initial Oxidation of Si(110)-16X22007
- Author(s)
  Maki Suemitsu, Hideaki Togashi, Atsushi Kato, Yuya Takaghashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu, Hideaki Togashi, Atsushi Kato, Yuya Takaghashi, Atsushi Konno, Yoshihisa Yamamoto, YudeHidehito Asaoka
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 996H
- Data Source
  KAKENHI-PROJECT-19360015
[Journal Article] MoO_2方形断面ナノチューブ2007
- Author(s)
  末光眞希, 及川大治, 半田浩之, 阿部俊三
- Journal Title
  
  応用物理学会応用電子物性分科会誌 13・1
  
  Pages: 22-24
- Data Source
  KAKENHI-PROJECT-16655075
[Journal Article] MoO_2 Hollow Fiber with Rectangular Cross Sections2005
- Author(s)
  Maki Suemitsu
- Journal Title
  
  JJAP PT2 Express Letters 44(15)(印刷中)
- NAID
  10015474226
- Data Source
  KAKENHI-PROJECT-16655075
[Patent] グラフェントランジスタおよびその製造方法2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-234207
- Filing Date
  2016-12-01
- Data Source
  KAKENHI-PROJECT-15K13353
[Patent] 積層装置2016
- Inventor(s)
  三橋史典、舘野泰範、末光眞希、吹留博一
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-083868
- Filing Date
  2016-04-19
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] SiC構造体およびその製造方法並びに半導体装置2016
- Inventor(s)
  末光真希、吹留博一、長澤弘幸、舘野泰範
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-172296
- Filing Date
  2016-09-02
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 半導体装置2016
- Inventor(s)
  舘野泰範、末光眞希、吹留博一
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-058449
- Filing Date
  2016-04-21
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 半導体装置2016
- Inventor(s)
  舘野泰範、末光眞希、吹留博一
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-058450
- Filing Date
  2016-04-21
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 半導体装置2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-217291
- Filing Date
  2016-11-07
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 電子素子及び製造法2016
- Inventor(s)
  舘野泰範、末光眞希、吹留博一、長澤弘幸
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-036124
- Filing Date
  2016-02-16
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 電子素子及び製造法2016
- Inventor(s)
  舘野泰範、末光眞希、吹留博一、長澤弘幸
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-036122
- Filing Date
  2016-02-26
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 積層体2016
- Inventor(s)
  三橋史典、舘野泰範、末光眞希、吹留博一
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-083869
- Filing Date
  2016-04-19
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] グラフェントランジスタおよびその製造方法2016
- Inventor(s)
  末光真希、吹留博一、長澤弘幸、舘野泰範
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-141610
- Filing Date
  2016-07-19
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 積層体および電子素子2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-234445
- Filing Date
  2016-12-01
- Data Source
  KAKENHI-PROJECT-15K13353
[Patent] グラフェントランジスタおよびその製造方法2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-234207
- Filing Date
  2016-12-01
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 半導体装置2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-242417
- Filing Date
  2016-12-14
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] SiC構造体およびその製造方法ならびに半導体装置2016
- Inventor(s)
  末光真希、吹留博一、長澤弘幸、舘野泰範
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-172296
- Filing Date
  2016-09-02
- Data Source
  KAKENHI-PROJECT-15K13353
[Patent] 半導体装置2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-217291
- Filing Date
  2016-11-07
- Data Source
  KAKENHI-PROJECT-15K13353
[Patent] 積層体および電子素子2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-234445
- Filing Date
  2016-12-01
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 電子素子及び製造法2016
- Inventor(s)
  舘野泰範、末光眞希、吹留博一、長澤弘幸
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-036123
- Filing Date
  2016-02-26
- Data Source
  KAKENHI-PROJECT-15H03560
[Patent] 半導体装置2016
- Inventor(s)
  末光真希、吹留博一、舘野泰範、岡田政也
- Industrial Property Rights Holder
  国立大学法人東北大学、住友電気工業株式会社
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-242417
- Filing Date
  2016-12-14
- Data Source
  KAKENHI-PROJECT-15K13353
[Presentation] Epitaxial graphene growth in Ar/H2 ambient2018
- Author(s)
  K. S. Kim, H. Fukidome, and M. Suemitsu
- Organizer
  The 8th edition of Graphene conference (June 2018).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065
[Presentation] Growth of high quality epitaxial graphene by modified hydrogen annealing2018
- Author(s)
  K. S. Kim, H. Fukidome, and M. Suemitsu
- Organizer
  第65回応用物理学会春季講演会 (March 2018).
- Data Source
  KAKENHI-PROJECT-17K19065
[Presentation] Gas-source MBE of cubic SiC on Si and formation of epitaxial graphene thereon2017
- Author(s)
  Maki Suemitsu
- Organizer
  ISEG-2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065
[Presentation] Simple formation of quasi-free-standing epitaxial graphene (QFSEG) using microwave annealing2017
- Author(s)
  Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Takashi Someya, Takushi Iimori, Fumio Komori, Iwao Matsuda, Maki Suemitsu
- Organizer
  ISEG-2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065
[Presentation] Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy2017
- Author(s)
  H. Fukidome, K. Omika, Y. Tateno, T. Kouchi, T. Komatani, N. Nagamura, S. Konno, Y. Takahashi, M. Kotsugi, K. Horiba, M. Suemitsu, M. Oshima
- Organizer
  ISSS-8
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03560
[Presentation] Formation of Quasi-Free-standing Epitaxial Graphene on SiC(0001) by Microwave Annealing2017
- Author(s)
  Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  Carbon 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19065
[Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates2016
- Author(s)
  Maki Suemitsu
- Organizer
  2016 MRS Spring Meeting & Exhibit
- Place of Presentation
  Phoenix Convention Center (Pheonix, AZ, USA)
- Year and Date
  2016-03-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンFETにおける真性トランジスタパラメータ抽出用モデルの評価2016
- Author(s)
  満塩純希, 玉虫元, 菅原健太, 佐藤昭, 末光哲也, 吹留博一, 末光眞希, 尾辻藤一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学(東京都目黒区大岡山)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates2016
- Author(s)
  Maki Suemitsu
- Organizer
  2016 MRS Spring Meeting & Exhibit
- Place of Presentation
  Phoenix Convention Center (Pheonix, AZ, USA)
- Year and Date
  2016-03-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] THz devices based on plasmons in 2D electron systems2016
- Author(s)
  A. Satou, T. Watanabe, T. Suemitsu, V. Ryzhii, D. Fateev, V. V. Popov, and T. Otsuji
- Organizer
  XX International Symposium"Nanophysics & Nanoelectronics"
- Place of Presentation
  The sanatorium "Motorist" (Nizhny Novgorod, Russia)
- Year and Date
  2016-03-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Si基板上3C-SiCヘテロエビ成長とエピタキシャルグラフェン2016
- Author(s)
  末光眞希
- Organizer
  第8回九大グラフェン研究会
- Place of Presentation
  九州大学(福岡県春日市)
- Year and Date
  2016-01-29
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] ハイブリッドSiC基板を用いたSi終端SiC単結晶薄膜上高品質グラフェン成長2016
- Author(s)
  遠藤則史、秋山昌次、田島圭一郎、末光眞希、小西繁、茂木弘、川合信、久保田芳宏、堀場弘司、組頭広志、吹留博一
- Organizer
  第77会応用物理学会講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Data Source
  KAKENHI-PROJECT-15K13353
[Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates2016
- Author(s)
  Maki Suemitsu
- Organizer
  2016 MRS Spring Meeting & Exhibit
- Place of Presentation
  Phoenix Convention Center (Pheonix, AZ, USA)
- Year and Date
  2016-03-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Si基板上3C-SiCヘテロエピ成長とエピタキシャルグラフェン2016
- Author(s)
  末光眞希
- Organizer
  第８回九大グラフェン研究会
- Place of Presentation
  九州大学（福岡県春日市）
- Year and Date
  2016-01-29
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] グラフェンチャネルFETにおける真性キャリア移動度の抽出2015
- Author(s)
  玉虫元, 菅原健太, 吹留博一, 末光眞希, 尾辻泰一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015: the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals2015
- Author(s)
  Maki Suemitsu
- Organizer
  IEFM 2015 : International symposium on emerging functional materials
- Place of Presentation
  Songdo Convensia (Incheon, Korea)
- Year and Date
  2015-11-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Si(110)上3C-SiC(111)薄膜の結晶方位回転成長機構2015
- Author(s)
  横山大、フィリモノフ　セルゲイ、長澤弘幸、吹留博一、末光眞希
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals2015
- Author(s)
  Maki Suemitsu
- Organizer
  IEFM 2015: International symposium on emerging functional materials
- Place of Presentation
  Songdo Convensia (Incheon, Korea)
- Year and Date
  2015-11-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Epitaxial graphene formation on SiC and on Si substrates2015
- Author(s)
  Maki Suemitsu
- Organizer
  PSS 2015 : Physical Sciences Symposia-2015
- Place of Presentation
  Courtyard Marriott (Cambridge, MA, USA)
- Year and Date
  2015-09-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene formation on SiC and on Si substrates2015
- Author(s)
  Maki Suemitsu
- Organizer
  PSS 2015: Physical Sciences Symposia-2015
- Place of Presentation
  Courtyard Marriott　(Cambridge, MA, USA)
- Year and Date
  2015-09-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] グラフェンチャネルFETにおける真性パラメータの抽出2015
- Author(s)
  玉虫元, 菅原健太, 佐藤昭, 田島圭一郎, 吹留博一, 末光眞希, 尾辻泰一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東北大学(宮城県仙台市)
- Year and Date
  2015-12-22
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High carrier mobility graphene-channel FET using SiN gate stack2015
- Author(s)
  G. Tamamushi, K. Sugawara, M. B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, and T. Otsuji
- Organizer
  CSW 2015 : Compound Semiconductor Week 2015, ISCS : The 42nd International Symposium on Compound Semiconductors
- Place of Presentation
  UCSB(米国カリフォルニア州サンタバーバラ市)
- Year and Date
  2015-06-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015: the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015: the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015 : the international conference on Smart Engineering of New
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015: the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals2015
- Author(s)
  Maki Suemitsu
- Organizer
  IEFM 2015: International symposium on emerging functional materials
- Place of Presentation
  Songdo Convensia (Incheon, Korea)
- Year and Date
  2015-11-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial graphene formation on SiC and on Si substrates2015
- Author(s)
  Maki Suemitsu
- Organizer
  PSS 2015: Physical Sciences Symposia-2015
- Place of Presentation
  Courtyard Marriott　(Cambridge, MA, USA)
- Year and Date
  2015-09-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si (110)2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015 : the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  Maki Suemitsu
- Organizer
  Asia-Pacific Symposium on Solid Surfaces
- Place of Presentation
  Vladivostok, Russia
- Year and Date
  2014-09-30
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術2014
- Author(s)
  末光眞希
- Organizer
  第11回Cat-CVD研究会
- Place of Presentation
  仙台，日本
- Year and Date
  2014-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] グラフェンのディスプレイ応用の可能性2014
- Author(s)
  末光眞希
- Organizer
  CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会(EID)
- Place of Presentation
  幕張、千葉, 日本
- Year and Date
  2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  Maki Suemitsu
- Organizer
  Asia-Pacific Symposium on Solid Surfaces
- Place of Presentation
  Vladivostok, Russia
- Year and Date
  2014-09-30
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014
- Author(s)
  M. Suemitsu
- Organizer
  2014 Tsukuba Nanotechnology Symposium (TNS'14)
- Place of Presentation
  つくば，日本
- Year and Date
  2014-07-26
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Growth of epitaxial graphene on SiC and its application to FET2014
- Author(s)
  Maki Suemitsu
- Organizer
  2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
- Place of Presentation
  Kuala Lumpur, Malaysia
- Year and Date
  2014-10-20
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  末光眞希
- Organizer
  EXMATEC 2014
- Place of Presentation
  Delphi, Greece
- Year and Date
  2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] グラフェンのディスプレイ応用の可能性グラフェンのディスプレイ応用の可能性2014
- Author(s)
  末光眞希
- Organizer
  CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会（EID）
- Place of Presentation
  幕張、千葉，日本
- Year and Date
  2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  末光眞希
- Organizer
  EXMATEC 2014
- Place of Presentation
  Delphi, Greece
- Year and Date
  2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene2014
- Author(s)
  M. Suemitsu
- Organizer
  Asia-Pacific Symposium on Solid Surfaces
- Place of Presentation
  Vladivostok, Russia
- Year and Date
  2014-09-30
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Growth of epitaxial graphene on SiC and its application to FET2014
- Author(s)
  M. Suemitsu
- Organizer
  2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
- Place of Presentation
  Kuala Lumpur, Malaysia
- Year and Date
  2014-10-20
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] グラフェンのディスプレイ応用の可能性2014
- Author(s)
  末光眞希
- Organizer
  CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会（EID）
- Place of Presentation
  幕張、千葉，日本
- Year and Date
  2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術2014
- Author(s)
  末光眞希
- Organizer
  第11回Cat-CVD研究会
- Place of Presentation
  仙台，日本
- Year and Date
  2014-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術2014
- Author(s)
  末光眞希
- Organizer
  第11回Cat-CVD研究会
- Place of Presentation
  仙台, 日本
- Year and Date
  2014-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  M. Suemitsu
- Organizer
  EXMATEC 2014
- Place of Presentation
  Delphi, Greece
- Year and Date
  2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Growth of epitaxial graphene on SiC and its application to FET2014
- Author(s)
  Maki Suemitsu
- Organizer
  2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
- Place of Presentation
  Kuala Lumpur, Malaysia
- Year and Date
  2014-10-20
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene on Silicon Substrates : Tailoring the Properties through Crystal Faces2014
- Author(s)
  末光眞希
- Organizer
  2014 Tsukuba Nanotechnology Symposium (TNS'14)
- Place of Presentation
  つくば, 日本
- Year and Date
  2014-07-26
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014
- Author(s)
  末光眞希
- Organizer
  2014 Tsukuba Nanotechnology Symposium (TNS'14)
- Place of Presentation
  つくば，日本
- Year and Date
  2014-07-26
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] グラフェンデバイスの現状と課題2013
- Author(s)
  末光眞希
- Organizer
  日本学術振興会産学協力研究委員会ナノプローブテクノロジー第167委員会主催の第70回研究会「グラフェン・シリセン・CNT」
- Place of Presentation
  東京
- Year and Date
  2013-04-18
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Solution-Processed Al2O3 for a Gate Dielectric in Graphene Field Effect Transistors2013
- Author(s)
  Goon-Ho Park, Won-Ju Cho and Maki Suemitsu
- Organizer
  TeraNano Student Seminar 2013
- Place of Presentation
  ビュルツブルグ, ドイツ
- Year and Date
  2013-03-03
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene FETs : Issues and Prospects2013
- Author(s)
  M. Suemitsu
- Organizer
  20 anniv. AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  京都
- Year and Date
  2013-07-04
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene formation on Si substrates : its history and current status・Session VII : Graohene Electronics, Plasmonics & Silicon Technology2013
- Author(s)
  Maki Suemitsu
- Organizer
  Physical Sciences Symposium-2013
- Place of Presentation
  Boston, USA
- Year and Date
  2013-09-05
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC and Formation of Epitaxial Graphene2013
- Author(s)
  末光眞希
- Organizer
  半導体に関する日露合同セミナー
- Place of Presentation
  仙台
- Year and Date
  2013-11-07
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Si基板上エピタキシャルグラフェンの放射光PES評価2013
- Author(s)
  末光眞希
- Organizer
  平成24年度文部科学省ナノテクノロジプラットフォーム事業　微細構造解析プラットフォーム　「放射光実験設備利用講習会・放射光利用研究セミナー」
- Place of Presentation
  大阪, 日本
- Year and Date
  2013-02-15
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] SiC上エピタキシャルグラフェンの成長過程とグラフェン・オン・シリコン技術2013
- Author(s)
  末光眞希
- Organizer
  日本物理学会
- Place of Presentation
  徳島
- Year and Date
  2013-09-25
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High Speed Graphene Field-effect Transistors Using Self-aligned Source and Drain Formation Technique2012
- Author(s)
  Maki Suemitsu
- Organizer
  Nano-S&T (Nano Sciences & Technologies2012)
- Place of Presentation
  Qingdao, China
- Year and Date
  2012-10-28
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial growth of graphene on 3C-SiC thin film formed on Si substrates2012
- Author(s)
  Maki Suemitsu
- Organizer
  International Symposium on Surface Science (ISSS-6)
- Place of Presentation
  東京(招待講演)
- Year and Date
  2012-12-15
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] 基板相互作用によるグラフェンの電子状態制御2012
- Author(s)
  吹留博一,川合祐輔, 末光眞希
- Organizer
  電子デバイス研究会(ED)
- Place of Presentation
  山形, 日本
- Year and Date
  2012-04-18
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy2012
- Author(s)
  Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Maki Suemitsu, Kousuke Nagashio, Akira Toriumi and Masaharu Oshima
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-07
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微細加工Si(100)基板上3C-SiC薄膜へのエピタキシャルグラフェン形成2012
- Author(s)
  井出隆之，川合祐輔，宮下英俊，吹留博一，末光眞希
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High Frequency Performance of Graphene Field-Effect Transistors with Extremely Small Access Length2012
- Author(s)
  Maki Suemitsu
- Organizer
  3rd International Symposium on Terahertz Nanoscience (TeraNanoⅢ)
- Place of Presentation
  ハワイ, 米国
- Year and Date
  2012-12-10
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Qualified Graphene-On-Silicon Formation Using 3C-SiC(111)/Si(110) Thick Film By Two-Step Growth2012
- Author(s)
  Shota Sambonsuge, Eiji Saito, Sergey Fimimonov, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 3次元nanoESCAを用いたグラフェンデバイス構造の実空間分解界面電子状態分析2012
- Author(s)
  永村直佳、堀場弘司、豊田智史、黒角翔大、篠原稔宏、井出隆之、吹留博一、末光眞希、長汐晃輔、鳥海明、尾嶋正治
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Definite Observation of Interfacial Charge Transfer in Graphene Transistor by Using Soft X-ray 3D Scanning Photoelectron Microscopy2012
- Author(s)
  Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima
- Organizer
  SSDM (2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都, 日本
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微傾斜Si(111)基板上エピタキシャルグラフェン成長2012
- Author(s)
  原本直樹、猪俣州哉、高橋良太、吉越章隆、寺岡有殿、吹留博一、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] In situ Observation of Graphene during Gate Oxide Formation using Raman Spectroscopy2012
- Author(s)
  R. Sato, H. Fukidome and M. Suemitsu
- Organizer
  MNC2012 (25th International Microprocesses and Nanoetechnology Conference)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-11-01
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Improvement Of Epitaxial Graphene On Silicon By Use Of Vicinal Si (111) Substrates2012
- Author(s)
  Naoki Haramoto, Syuya Inomata, Ryota Takahashi, Akitaka Yoshigoe, Yuden Teraoka, Hirokazu Hukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 3C-SiC(111)/Si(111)薄膜上グラフェンの電子構造の評価2012
- Author(s)
  猪俣州哉、半田浩之、高橋良太、今泉京、原本直樹、吹留博一、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Controls of Structural, Electronic, and Pseudofield Properties of Epitaxial Graphene by Microfabrication2012
- Author(s)
  Hirokazu Fukidome, Yusuke Kawai, Masato Kotsugi, Felix Fromm, Takayuki Ide, Takuo Ohkouchi, Hidetoshi Miyashita, Toyohiko Kinoshita, Maki Suemitsu1, Thomas Seyller
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxy Of Graphene On Si(100) And Si(111) Faces Simultaneously Formed On Si(100) Substrate2012
- Author(s)
  Takayuki Ide, Yusuke Kawai, Hirokazu Fukidome, Hidetoshi Miyashita,Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta,Toyohiko Kinoshita, Koji Horiba, Naoka Nagamura, Satoshi Toyoda,Toshihiro Shinohara, Masaharu Oshima, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy2012
- Author(s)
  Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu
- Organizer
  ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  サンクトペテルブルク, ロシア
- Year and Date
  2012-09-04
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon2012
- Author(s)
  Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov
- Organizer
  ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  サンクトペテルブルク, ロシア
- Year and Date
  2012-09-03
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] SiC薄膜を介したSi基板上エピタキシャルグラフェン製膜とグラフェンデバイス2012
- Author(s)
  末光眞希
- Organizer
  光ナノサイエンス特別講演会
- Place of Presentation
  奈良, 日本
- Year and Date
  2012-09-19
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 回転エピ成長3C-SiC(111)/Si(110)の厚膜化による高品質グラフェン形成2012
- Author(s)
  Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu Eiji Saito, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] サーファクタントを利用したGe/Siヘテロ成長過程におけるストレス・表面構造の同時観察2012
- Author(s)
  朝岡秀人、山崎竜也、社本真一、S. N. Filimonov、末光眞希
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Electronic structure observations of graphene on 3C-SiC(111)/Si(111)2012
- Author(s)
  Syuya Inomata, Ryota Takahashi, Hiroyuki Handa, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy2012
- Author(s)
  H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu
- Organizer
  VAS14(14th International Conference on Vibrations at Surfaces)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial Graphene Formation on 3C-SiC/Si Thin Films2012
- Author(s)
  Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene on silicon2012
- Author(s)
  Maki Suemitsu, Hirokazu Fukidome
- Organizer
  ANM2012(4th International Conference on Advanced Nano Materials)
- Place of Presentation
  Chennai, India
- Year and Date
  2012-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] THz Coherent Phonons in Graphene on Silicon2012
- Author(s)
  M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)
- Organizer
  第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)
- Place of Presentation
  沖縄
- Year and Date
  2012-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] In-situ Raman Observation of Graphene during Formation of Al-oxide Gate Dielectrics2012
- Author(s)
  Ryo Sato, Hirokazu fukidome,Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 界面応力制御によるグラフェンの擬スカラーポテンシャルの創出2012
- Author(s)
  吹留博一、川合祐輔、フロムフェリックス、小嗣真人、半田浩之、井出隆之、大河内拓雄、宮下英俊、遠田義晴、木下豊彦、トーマスザイラー、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Plasma-oxidized Al2O3 for　Gate　Dielectrics in　Graphene Field　Effect　Transistors2012
- Author(s)
  G.-H. Park, M.-H. Jung, S. Inomata,　H. Fukidome, T. Suemitsu, T. Otsuji　and M. Suemitsu
- Organizer
  MNC2012(25th International Microprocesses and Nanotechnology Conference)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-11-02
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微細加工Si(100)基板上エピタキシャルグラフェンの形成と物性評価2012
- Author(s)
  井出隆之，川合祐輔，吹留博一，宮下英俊、小嗣正人、大河内拓雄、遠田義晴、木下豊彦、堀場弘司、永村直佳、篠原稔宏、尾嶋正治、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微傾斜Si(111)基板を用いたグラフェン・オン・シリコン2012
- Author(s)
  Naoki Haramoto,Syuya Inomata,Shota Sanbonsuge,Akitaka Yoshigoe,Yuden Teraoka,Hirokazu Fukidome,Maki Suemitsu
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Growth of epitaxial graphene on 3C-SiC/Si heterostructure2011
- Author(s)
  Maki Suemitsu, Hiroyuki Handa, Shun Ito, and Hirokazu Fukidome
- Organizer
  HeteroSiC-WASMPE2011
- Place of Presentation
  Tours
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Tunable electronic structure of epitaxial graphene formed on silicon substrates2011
- Author(s)
  Maki Suemitsu, and Hirokazu Fukidome
- Organizer
  3rd Symposium on the Science and Technology of Epitaxial Graphene (STEG3)
- Place of Presentation
  Florida
- Year and Date
  2011-10-25
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] SiC薄膜を介したSi基板上エピタキシャルグラフェンの形成2011
- Author(s)
  末光眞希
- Organizer
  第31回表面科学学術講演会
- Place of Presentation
  東京都江戸川区(招待)
- Year and Date
  2011-12-16
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Novel epitaxy of graphene using substrate microfabrication2011
- Author(s)
  H.Fukidome, M.Kotsugi, T.Ohokuchi, T.Kinoshita, Th.Seyller, K.Horn, Y.Kawai, M.Suemitsu, Y.Watanabe
- Organizer
  APS March Meeting 2011
- Place of Presentation
  Dallas, USA
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Growth of epitaxial graphene on 3C-SiC/Si heterostructure2011
- Author(s)
  末光眞希
- Organizer
  HeteroSiC-WASMPE 2011
- Place of Presentation
  Tours, France
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] XTEM characterization of epitaxial graphene formed on non-basal SiC surfaces2011
- Author(s)
  末光眞希
- Organizer
  International Conference on New Diamond and Nano Carbons 2011
- Place of Presentation
  島根県松江市
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンのエピタキシャル成長法2011
- Author(s)
  末光眞希
- Organizer
  応用物理学会第49回応用物理学会スクール-グラフェンの基礎から応用まで
- Place of Presentation
  山形県山形市(invited)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Tunable electronic structure of epitaxial graphene formed on silicon substrates2011
- Author(s)
  Maki Suemitsu, Hirokazu Fukidome
- Organizer
  3rd Symposium on the Science and Technology of Epitaxial Graphene (STEG3)
- Place of Presentation
  Florida (USA)(招待講演)
- Year and Date
  2011-10-25
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Graphene/SiC/Si FETs with SiCN Gate Stack2011
- Author(s)
  末光哲也
- Organizer
  220th ECS Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2011-10-12
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial growth of graphene on 3C-SiC thin film formed on Si substrates2011
- Author(s)
  Maki Suemitsu
- Organizer
  International Symposium on Surface Science(ISSS-6)
- Place of Presentation
  東京
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Si(111) "Growth on 3C-SiC(111)/Si(110) by using Monomethylsilane and Disilane"2010
- Author(s)
  R.Bantaculo, E.Saitoh, Y.Miyamoto, H.Handa, M.Suemitsu
- Organizer
  18th International Vacuum Congress (ICV-18)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE2010
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
- Organizer
  2nd International Symposium on Graphene Devices
- Place of Presentation
  仙台
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Nanoscale Control of Structure of Epitaxial Graphene by Using Substrate Microfabrication2010
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
- Organizer
  2nd International Symposium on Graphene Devices
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate2010
- Author(s)
  H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe, T. Kinoshita
- Organizer
  23rd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  福岡
- Year and Date
  2010-11-09
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] 光電子分光と基板曲率測定によるSi(110)初期酸化過程の評価2009
- Author(s)
  山本喜久,鈴木康,宮本優,ローランド・バンタクロー,末光眞希,遠田義晴,寺岡有殿,吉越章隆,朝岡秀人,山崎竜也
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会
- Place of Presentation
  静岡
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Formation of Epitaxial Graphene on Silicon Substrates via a SiC Ultrathin Film2009
- Author(s)
  末光眞希
- Organizer
  SICC-6
- Place of Presentation
  Singapore、Singapore
- Year and Date
  2009-12-15
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Surface stress relief in Bi-mediated Ge growth on Si2009
- Author(s)
  朝岡秀人, T.Yamazaki, S.Shamoto, S.Filimonov, M.Suemitsu
- Organizer
  36th Korean Vacuum Society meeting
- Place of Presentation
  Seoul
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Si系薄膜の成膜機構の原子・分子レベルでの解明と低温・高品質形成を実現する新たな成膜技術の創生2009
- Author(s)
  末光眞希
- Organizer
  第50回真空に関する連合講演会
- Place of Presentation
  東京
- Year and Date
  2009-11-04
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Surface stress relief in Bi-mediated Ge growth on Si2009
- Author(s)
  H. Asaoka, T. Yamazaki, S. Shamoto, S. Filimonov, M. Suemitsu
- Organizer
  36^<th> Korean Vacuum Society meeting
- Place of Presentation
  Seoul
- Year and Date
  2009-02-11
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Chemical Composition of Ge(Si)Islands on Si(100)substrate capped with Si2009
- Author(s)
  A.Arnold, Y.Enta, M.Suemitsu, M.Kotsugi, T.Ohkochi, T.Kinoshita, Y.Watanabe
- Organizer
  IWES2009
- Place of Presentation
  松島
- Year and Date
  2009-10-11
- Data Source
  KAKENHI-PROJECT-20656007
[Presentation] Formation of Epitaxial Graphene on Silicon Substrates via a SiC Ultrathin Film2009
- Author(s)
  Maki Suemitsu
- Place of Presentation
  シンガポール
- Year and Date
  2009-12-15
- Data Source
  KAKENHI-PROJECT-21360017
[Presentation] Si(110)-16×2面上極薄酸化膜形成過程とその界面構造2008
- Author(s)
  山本喜久, 富樫秀晃, 加藤篤, 末光眞希, 成田克, 吉越章隆, 寺岡有殿
- Organizer
  第13回ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  静岡
- Year and Date
  2008-01-13
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] SR-PESとSTMによるSi(110)-16×2室温酸化表面上の準安定状態の観察2008
- Author(s)
  富樫秀晃, 山本喜久, 後藤成一, 高橋裕也, 中野卓哉, 今野篤史, 末光眞希, 朝岡秀人, 吉越章隆
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Si(110)面上1原子層酸化膜の結合状態のSR-PESによる評価2008
- Author(s)
  山本喜久, 富樫秀晃, 今野篤史, 松本光正, 加藤篤, 齋藤英司, 末光眞希, 寺岡有殿, 吉越章隆
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Si(110)面上熱酸化膜形成時におけるSiサブオキサイド時間発展のXPSリアルタイム測定2008
- Author(s)
  山本喜久, 富樫秀晃, 今野篤史, 松本光正, 加藤篤, 齋藤英司, 末光眞希, 寺岡有殿, 吉越章隆
- Organizer
  シリコン材料・デバイス研究会(SDM)
- Year and Date
  2008-06-10
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] BiサーファクタントGe成長過程のストレス・RHEEDその場観察2008
- Author(s)
  朝岡秀人、山崎竜也、社本真一、S. N. Filimonov、末光眞希
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Si(110)面上1原子層酸化膜の形成過程とその界面結合状態2008
- Author(s)
  山本喜久, 富樫秀晃, 加末光眞希, 成田克, 寺岡有殿, 吉越章隆
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Si(110)初期酸化時の化学結合状態および基板曲率のリアルタイム計測2008
- Author(s)
  山本喜久,鈴木康,宮本優,ローランド・バンタクロー,末光眞希,遠田義晴、寺岡有殿,吉越章隆,朝岡秀人,山崎竜也
- Organizer
  第63回応用物理学会東北支部学術講演会
- Place of Presentation
  宮城
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-20310064
[Presentation] Si(110)初期酸化時の化学結合状態および基板曲率のリアルタイム計測2008
- Author(s)
  末光眞希, 遠田義晴, 寺岡有殿, 吉越章越, 朝末光眞希, 遠田義晴岡秀人, 山崎竜也
- Organizer
  第63回応用物理学会東北支部学術講演会
- Place of Presentation
  宮城
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Bonding Structure of Ultrathin Oxides on Si(110)Surface2008
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Maki Suemitsu, Yuzuru Narita, Yuden Teraoka, Akitaka Yoshigoe
- Organizer
  2008 Materials Research Society(MRS)Spring Meeting
- Place of Presentation
  San Francisco(USA)
- Year and Date
  2008-03-24
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Si(110)表面酸化・準安定吸着状態のSR-PES観察2008
- Author(s)
  山本喜久, 富樫秀晃, 末光眞希, 寺岡有殿, 吉越章隆
- Organizer
  第3回JAEA放射光科学研究シンポジウム
- Place of Presentation
  兵庫
- Year and Date
  2008-02-28
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] SR-PES Observation of Metastable Chemisorption State of Oxygen on Si(110)-16×2 Surface2007
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Satoshi Hasegawa, Takuya NakanoSeiichi Goto, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces(ISCSI-V)
- Place of Presentation
  Tokyo
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Effects of Threshold Voltage Fluctuations on Stability of MOS Current Mode Logic Inverter Circuit2007
- Author(s)
  K. Suzuki, H. Na, Y. Narita, H. Nakazawa, T. Itoh, K. Yasui, M. Suemitsu and T. Endoh
- Organizer
  IEEE, IMFEDK2007
- Place of Presentation
  大阪
- Year and Date
  2007-04-23
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Si(110)-16×2表面の急速初期酸化現象と表面再配列2007
- Author(s)
  富樫秀晃, 山本喜久, 後藤成一, 高橋裕也, 中野卓哉, 今野篤史, 末光眞希, 朝岡秀人, 吉越章隆, 寺岡有殿
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Metastable Chemisorption State of Oxygeon Si(110)-16×2 Surface Observed by SR-PES2007
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Satoshi Hasegawa, Takuya Nakano, Seiichi Goto, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Si(110)-16×2面のリアルタイムSR-XPS観測と自己触媒反応モデル2007
- Author(s)
  山本喜久, 富樫秀晃, 今野篤史, 加藤篤, 末光眞希, 寺岡有殿, 吉越章隆
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] Real-time monitoring of initial oxidation of Si(110)-16×2 surface by Si 2p Photoemission spectroscopy2007
- Author(s)
  Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Satoshi Hasegawa, Seiiti Goto, Takuya Nakano, Maki Suemitsu, Yuzuru Narita, Akitaka Yoshigoe, Yuden Teraoka
- Organizer
  2007 International Conference on Solid StateDevice and Materialis
- Place of Presentation
  Ibarak
- Data Source
  KAKENHI-PROJECT-19360015
[Presentation] グラフェンのオペランド・ナノ X線吸収分光
- Author(s)
  吹留博一、小嗣真人、長汐晃輔、佐藤良、大河内拓雄、木下豊彦、伊藤隆、鳥海明、末光眞希
- Organizer
  第９回顕微ナノ材料科学研究会/放射光表面科学研究部会合同シンポジウム
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 微細加工Si(100), Si(111)上エピタキシャルグラフェンの電子状態観察
- Author(s)
  田島圭一郎，井出隆之, 川合祐輔, 堀場弘司, 永村直佳, 尾嶋正治, 吹留博一, 末光眞希
- Organizer
  第９回顕微ナノ材料科学研究会/放射光表面科学研究部会合同シンポジウム
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価
- Author(s)
  三本菅正太，長澤弘幸，Sergey Filimonov ，伊藤駿，吹留博一，末光眞希
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価
- Author(s)
  三本菅正太，長澤弘幸，Sergey Filimonov ，伊藤駿，吹留博一，末光眞希
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価
- Author(s)
  原本直樹、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial graphene formation on Si substrates: its history and current status
- Author(s)
  M. Suemitsu
- Organizer
  Physical Sciences Symposium-2013, Session VII:Graphene Electronics, Plasmonics & Silicon Technology
- Place of Presentation
  Boston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Microscopic Control of structural and electronic properties of Graphene by growing on SiC thin film on a microfabricated Si substrate
- Author(s)
  H. Fukidome, T. Ide, Y. Kawai, M. Suemitsu, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima
- Organizer
  Graphene Week 2013
- Place of Presentation
  Chemnitz, Germany
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
- Author(s)
  S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, and M. Suemitsu
- Organizer
  HeteroSic-WASMPE2013
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate
- Author(s)
  Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu","Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
- Organizer
  ALC'13
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価
- Author(s)
  三本菅正太、長澤弘幸、伊藤駿、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制
- Author(s)
  細谷友崇、三本菅正太、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  宮崎
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価
- Author(s)
  三本菅正太、長澤弘幸、伊藤駿、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制
- Author(s)
  細谷友崇、三本菅正太、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene on Silicon Substrates: Current Status and Perspective
- Author(s)
  Sai JIAO, Maki Suemitsu
- Organizer
  Energy Materials Nanotechnology(EMN) East Workshop
- Place of Presentation
  Beijing, China
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Microscopic Control of Epitaxial Graphene on SiC(111) and SiC(100) Thin Films on a Microfabricated Si(100) Substrate
- Author(s)
  H. Fukidome, T. Ide, M. Suemitsu, Y. Kawai, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima
- Organizer
  AVS 60th International Symposium & Exhibition
- Place of Presentation
  Los Angels, USA
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] グラフェンデバイスの現状と課題
- Author(s)
  末光眞希
- Organizer
  日本学術振興会　産学協力研究委員会　ナノプローブテクノロジー第167委員会第70回研究会「グラフェン・シリセン・CNT」
- Place of Presentation
  東京
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 微細加工Si(100), Si(111)基板上エピタキシャルグラフェンの物性評価
- Author(s)
  田島圭一郎、末光眞希、吹留博一,川合祐輔、尾嶋正治、堀場弘司、永村直佳、井出隆之
- Organizer
  第54回真空に関する連合講演会
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] SiC上エピタキシャルグラフェンの成長過程とグラフェン・オン・シリコン技術
- Author(s)
  末光眞希
- Organizer
  日本物理学会
- Place of Presentation
  徳島
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate
- Author(s)
  N. Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
- Organizer
  ALC'13
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene
- Author(s)
  M. Suemitsu
- Organizer
  半導体に関する日露合同セミナー
- Place of Presentation
  仙台
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
- Author(s)
  S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, and M. Suemitsu
- Organizer
  HeteroSic-WASMPE2013
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure
- Author(s)
  Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] 微傾斜Si(111)基板使用によるSi基板上エピタキシャルグラフェンの高品質化
- Author(s)
  原本直樹，猪俣州哉，三本菅正太，吹留博一，末光眞希
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  宮崎
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene
- Author(s)
  M. Suemitsu
- Organizer
  半導体に関する日露合同セミナー
- Place of Presentation
  仙台
- Invited
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] Graphene FETs: Issues and Prospects
- Author(s)
  M. Suemitsu
- Organizer
  AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices)
- Place of Presentation
  京都
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces
- Author(s)
  S.N. Filimonov, Yu.Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
- Organizer
  ACSIN-12&ICSPM21
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-25600091
[Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure
- Author(s)
  Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces
- Author(s)
  S.N. Filimonov, Yu.Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
- Organizer
  ACSIN-12&ICSPM21
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価
- Author(s)
  原本直樹、長澤弘幸、伊藤俊、吹留博一、末光眞希
- Organizer
  SiC及び関連半導体研究　第22回講演会
- Place of Presentation
  浦和
- Data Source
  KAKENHI-PROJECT-25600091

1. FUKIDOME Hirokazu (10342841)

# of Collaborated Projects: 6 results

# of Collaborated Products: 126 results
2. ENTA Yoshiharu (20232986)

# of Collaborated Projects: 5 results

# of Collaborated Products: 6 results
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# of Collaborated Projects: 4 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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22. SANO Eiichi (10333650)

# of Collaborated Projects: 1 results

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23. MAXIM Ryzhii (50254082)

# of Collaborated Projects: 1 results

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24. KUSHIBIKI Jun-ichi (50108578)

# of Collaborated Projects: 1 results

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25. MATSUMOTO Yasushi (20312598)

# of Collaborated Projects: 1 results

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26. ONO Yuu (70271880)

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# of Collaborated Projects: 1 results

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30. 尾鍋研太郎 (50204227)

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35. WATANABE Takayuki

# of Collaborated Projects: 1 results

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36. BOUBANGA-TOMBET Stephane

# of Collaborated Projects: 1 results

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37. TAKABAYASHI Susumu

# of Collaborated Projects: 1 results

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38. TAKAKUWA Yuzi

# of Collaborated Projects: 1 results

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39. AGO Hiroki

# of Collaborated Projects: 1 results

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40. KAWAHARA Kenji

# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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42. POPOV Vyacheslav

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44. MITIN Vladimir

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45. SHUR Michael

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46. WATANABE Fumio

# of Collaborated Projects: 1 results

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47. MIYAMOTO Kazuo

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48. NAKAZAWA Hideki

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49. 片山竜二

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50. SCHWAB Claud

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51. CLAUDE Schwab

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52. 築舘厳和

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53. YAMASUE Kohei

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54. KAWAI Yusuke

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55. KURITA Yuki

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56. KANAI Teruto

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57. IIMORI Takushi

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58. RYZHII Victor

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59. マキシムリズイー

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60. 長康雄

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61. 小嗣真人

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62. 吉越章隆

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63. TOMBET STEPHANE

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64. 長汐晃輔

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# of Collaborated Products: 1 results
65. 板谷治郎

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66. 松田巌

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74. 北島正弘

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75. 片山郁文

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suemitsu maki 末光 眞希

SUEMITSU Maki 末光 眞希

末光 真希 スエミツ マキ

末松 眞希 スエマツ マキ

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Fabrication of quasi-free-standing epitaxial graphene to realize graphene-based devicesPrincipal Investigator

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Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronicsPrincipal Investigator

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Innovation of CMOS process using crystallographic orientation during multiple-layer epi-growthPrincipal Investigator

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STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBONPrincipal Investigator

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新奇量子構造SiGeナノハットおよびナノリングの自己組織的形成Principal Investigator

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Oxidation kinetics of Si(110) surface and electrical properties of the oxide as a basis for next-generation CMOS devicesPrincipal Investigator

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矩形断面を有する金属酸化物ナノチューブの堆積制御と物性探索Principal Investigator

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SURFACE CHEMISTRY DURING SiC EPITAXIAL GROWTH USING ORGANO-SILANESPrincipal Investigator

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suemitsu maki 末光眞希

SUEMITSU Maki 末光眞希

末光真希スエミツマキ

末松眞希スエマツマキ