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Takeuchi Tetsuya  竹内 哲也

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TAKEUCHI Tetsuya  竹内 哲也

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Researcher Number 10583817
Affiliation (Current) 2023: 名城大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help 2015 – 2023: 名城大学, 理工学部, 教授
2010 – 2014: 名城大学, 理工学部, 准教授
Review Section/Research Field
Principal Investigator
Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering / Applied materials science/Crystal engineering / Broad Section D / Electronic materials/Electric materials
Except Principal Investigator
Science and Engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering / Engineering
Keywords
Principal Investigator
トンネル接合 / 窒化物半導体 / 電流狭窄 / ワイドギャップ半導体 / 多層膜反射鏡 / 面発光レーザー / 正孔 / 低温成長 / 分極ドーピング / 面発光レーザ … More / その場観察 / 酸化狭窄 / 導電性DBR / GaN / エピタキシャル成長 / 半導体レーザ / 光閉じ込め / 窒化ガリウム / サーファクタント効果 / アンチモン / 価電子帯制御 / 半導体物性 / 誘電体物性 / トンネル現象 / エピタキシャル / ワイドギャップ / 分極 / 光デバイス / p型 / 水素脱離 / メモリー効果 / Mg偏析 / 水素脱理 / 低抵抗化 / 高効率 / 白色光源 … More
Except Principal Investigator
AlGaN / 結晶成長 / 電子線励起 / レーザ / 窒化物半導体 / ナノワイヤ / AlN / 光励起レーザ / 光励起 / レーザー / 光物性 / Ｘ線 / エピタキシャル / 結晶工学 / 半導体レーザ / 量子構造 / 発光素子 / 量子閉じ込め / ナノ材料 / 半導体 / 不純物 / 半導体発光デバイス / 量子効果 / 特異構造 / SiC / 超格子 / LED / 半導体発光材料 / 微細構造評価 / 光学特性 / ポーラス結晶 / ナノ構造 / 半導体レーザー / 選択成長 / 量子殻 / GaN / 紫外レーザ / 窒化アルミニウムガリウム / 紫外線レーザ / キャリア注入 / 紫外 / 高性能レーザー / 半導体物性 / 光強度 / 低閾値 / ウェットエッチング / 光共振器 / 窒化アルミニウム / 窒化ガリウム / 電子線 / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / グラフェン / カーボンナノチューブ / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / 深紫外 / 分極ドーピング / 熱処理 / ナノカーボン / 結晶成長その場観察 / 電気・電子材料 Less

  • Research Projects

    (12 results)

  • Research Products

    (621 results)

  • Co-Researchers

    (17 People)

  •  ワイドギャップ半導体における不純物ドーピング伝導制御からの脱却Principal Investigator

    • Principal Investigator
      竹内 哲也
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Meijo University

  •  Departure from conductivity control with impurity doping in widegap semiconductorsPrincipal Investigator

    • Principal Investigator
      竹内 哲也
    • Project Period (FY)
      2023 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section D
    • Research Institution
      Meijo University

  •  Far-UV C AlGaN-based electron beam pumped laser

    • Principal Investigator
      岩谷 素顕
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Meijo University

  •  大口径・高出力青緑色面発光レーザーの開発Principal Investigator

    • Principal Investigator
      竹内 哲也
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Meijo University

  •  blue-green VCSELs towards high-quality light sources with three primary colorPrincipal Investigator

    • Principal Investigator
      Takeuchi Tetsuya
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Crystal engineering
    • Research Institution
      Meijo University

  •  Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism

    • Principal Investigator
      Kamiyama Satoshi
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Meijo University

  •  Anion-controlled nitride-based semiconductor alloys towards laser diodes in unexploited wavelength regionsPrincipal Investigator

    • Principal Investigator
      Takeuchi Tetsuya
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University

  •  Electron beam excited nitride-based UV laser

    • Principal Investigator
      Iwaya Motoaki
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Crystal engineering
    • Research Institution
      Meijo University

  •  Novel approaches for hole injections in widegap semiconductors and their applications to novel light-emitting devicesPrincipal Investigator

    • Principal Investigator
      Takeuchi Tetsuya
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Meijo University

  •  Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

    • Principal Investigator
      AMANO Hiroshi
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Nagoya University

  •  A novel current injection in wide bandgap semiconductors with tunnel junctionsPrincipal Investigator

    • Principal Investigator
      TAKEUCHI Tetsuya
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University

  •  高効率青色面発光レーザによる白色光源Principal Investigator

    • Principal Investigator
      竹内 哲也
    • Project Period (FY)
      2010 – 2011
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 Other

All Journal Article Presentation Book Patent

  • [Book] III-Nitride Tunnel Junctions and Their Applications2017
    • Author(s)
      S. Rajan, T. Takeuchi
    • Publisher
      Springer
    • ISBN
      9789811037542
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Book] ポストシリコン半導体　－ナノ成膜ダイナミクスと基板・界面効果－2013
    • Author(s)
      竹内哲也（分担）
    • Total Pages
      11
    • Publisher
      株式会社エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-2013
    • Author(s)
      竹内哲也(分担)
    • Publisher
      株式会社エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Book] 次世代半導体におけるナノ成膜ダイナミックスと界面量子効果2013
    • Author(s)
      竹内哲也
    • Total Pages
      11
    • Publisher
      株式会社エヌ･ティー･エス
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers2021
    • Author(s)
      DP. Han, R. Fujiki, R. Takahashi, Y. Ueshima, S. Ueda, W. Lu, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 118 Issue: 2 Pages: 021102-021102

    • DOI

      10.1063/5.0035343

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy2021
    • Author(s)
      Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Akasaki Isamu
    • Journal Title

      Semiconductor Science and Technology

      Volume: 36 Issue: 6 Pages: 063001-063001

    • DOI

      10.1088/1361-6641/abeb82

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Journal Article] High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy2020
    • Author(s)
      T. Akagi, Y. Kozuka, K. Ikeyama, S. Iwayama, M. Kuramoto, T. Saito, T. Tanaka, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 12 Pages: 125504-125504

    • DOI

      10.35848/1882-0786/abc986

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353

  • [Journal Article] MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs2020
    • Author(s)
      N. Goto, N. Sone, K. Iida, W. Lu, A. Suzuki, H. Murakami, M. Terazawa, M. Ohya, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 539 Pages: 125571-125571

    • DOI

      10.1016/j.jcrysgro.2020.125571

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire2020
    • Author(s)
      K. Sato, S. Yasue, K. Yamada, S. Tanaka, T. Omori, S. Ishizuka, S. Teramura, Y. Ogino, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 3 Pages: 031004-031004

    • DOI

      10.35848/1882-0786/ab7711

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416

  • [Journal Article] Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation2020
    • Author(s)
      K. Yanai, W. Lu, Y. Yamane, DP. Han, H. Ou, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Nanomaterials

      Volume: 10 Issue: 10 Pages: 2075-2075

    • DOI

      10.3390/nano10102075

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE2020
    • Author(s)
      N. Goto, W. Lu, H. Murakami, M. Terazawa, J. Uzuhashi, T. Ohkubo, K. Hono, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGE05-SGGE05

    • DOI

      10.35848/1347-4065/ab70aa

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation2020
    • Author(s)
      DP. Han, CH. Oh, DS. Shin, JI. Shim, M. Iwaya, T. Takeuchi, . Kamiyama, I. Akasaki
    • Journal Title

      Journal of Applied Physics

      Volume: 128 Issue: 12 Pages: 123103-123103

    • DOI

      10.1063/5.0008041

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors2020
    • Author(s)
      Iida Ryosuke、Ueshima Yusuke、Muranaga Wataru、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Akasaki Isamu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGE08-SGGE08

    • DOI

      10.35848/1347-4065/ab6e05

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416

  • [Journal Article] GaNトンネル接合を備えたLEDにおける横方向Mg活性化の最適化2020
    • Author(s)
      田先美貴子、清原一樹、小田原麻人、伊藤太一、竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Journal Title

      信学技報

      Volume: 120 Pages: 67-70

    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Journal Article] In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps2020
    • Author(s)
      Hiraiwa Kei、Muranaga Wataru、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Akasaki Isamu
    • Journal Title

      Journal of Crystal Growth

      Volume: 531 Pages: 125357-125357

    • DOI

      10.1016/j.jcrysgro.2019.125357

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching2020
    • Author(s)
      R. Iida, Y. Ueshima, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki, M. Kuramoto, T. Kamei
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 1 Pages: 012003-012003

    • DOI

      10.35848/1882-0786/abcfd7

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353

  • [Journal Article] Internal loss of AlGaN-based ultraviolet-B band lasr diodes with p-type AlGaN cladding layer using polarization doping2020
    • Author(s)
      T. Omori, S. Ishizuka, S. Tanaka, S. Yasue, K. Sato, Y. Ogino, S. Teramura, K. Yamada, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 7 Pages: 071008-071008

    • DOI

      10.35848/1882-0786/ab9e4a

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416

  • [Journal Article] Identifying the cause of thermal droop in GaInN-based LEDs by carrier-and thermo-dynamics analysis2020
    • Author(s)
      DP. Han, GW. Lee, SM., Dong-Soo Shin, Jong-In Shim, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Scientific Reports

      Volume: 10 Issue: 1 Pages: 1-11

    • DOI

      10.1038/s41598-020-74585-w

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors2020
    • Author(s)
      Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 5 Pages: 055506-055506

    • DOI

      10.35848/1882-0786/ab88c6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416

  • [Journal Article] Growth and Characterization of Core-Shell Structures Consisting of GaN Nanowire Core and GaInN/GaN Multi-Quantum Shell2020
    • Author(s)
      S Kamiyama, W Lu, T Takeuchi, M Iwaya, I Akasaki
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 9 Issue: 1 Pages: 015007-015007

    • DOI

      10.1149/2.0252001jss

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Photoluminescence Characterization of Fluorescent SiC with High Boron and Nitrogen Concentrations2020
    • Author(s)
      D. Tanaka, W. Lu, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
    • Journal Title

      Materials Science Forum

      Volume: 1004 Pages: 265-271

    • DOI

      10.4028/www.scientific.net/msf.1004.265

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light ;Emitting Diodes2020
    • Author(s)
      DP. Han, S. Ishimoto, R. Mano, W. Lu, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      physica status solidi (a)

      Volume: 217 Issue: 7 Pages: 1900713-1900713

    • DOI

      10.1002/pssa.201900713

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions2020
    • Author(s)
      K. Kiyohara, M. Odawara, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki, T. Saito
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 11 Pages: 111003-111003

    • DOI

      10.35848/1882-0786/abbe80

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353

  • [Journal Article] Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers2020
    • Author(s)
      K. Sato, S. Yasue, Y. Ogino, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      physica status solidi (a)

      Volume: 217 Issue: 14 Pages: 1900864-1900864

    • DOI

      10.1002/pssa.201900864

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors2019
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
    • Journal Title

      Reports on Progress in Physics

      Volume: 82 Issue: 1 Pages: 012502-012502

    • DOI

      10.1088/1361-6633/aad3e9

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055

  • [Journal Article] Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires2019
    • Author(s)
      W. Yi, J. Uzuhashi, J. Chen, T. Kimura, S. Kamiyama, T. Takeuchi, T. Ohkubo, T. Sekiguchi, K. Hono
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 8 Pages: 085003-085003

    • DOI

      10.7567/1882-0786/ab2e37

    • NAID

      210000156584

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes2019
    • Author(s)
      Ryoya Mano, Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
    • Journal Title

      Applied Science

      Volume: 9 Issue: 2 Pages: 305-305

    • DOI

      10.3390/app9020305

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] 青色LEDの将来展望：マイクロLEDディスプレイと青色レーザー2019
    • Author(s)
      竹内　哲也
    • Journal Title

      化学と教育

      Volume: 67 Pages: 368-371

    • NAID

      130007883568

    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy2019
    • Author(s)
      Yasuto Akatsuka, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 2 Pages: 025502-025502

    • DOI

      10.7567/1882-0786/aafca8

    • NAID

      210000135591

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055

  • [Journal Article] AlInN/GaN多層膜反射鏡を有するGaN系面発光レーザーの偏波特性2019
    • Author(s)
      小田　薫、飯田涼介、岩山　章、清原一樹、竹内哲也、上山　智、岩谷素顕、赤崎　勇
    • Journal Title

      信学技報

      Volume: 119 Pages: 57-60

    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis2019
    • Author(s)
      Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 3 Pages: 032006-032006

    • DOI

      10.7567/1882-0786/aafca2

    • NAID

      210000135589

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices2019
    • Author(s)
      Kosuke Sato, Shinji Yasue, Yuya Ogino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Jaoanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC1016-SC1016

    • DOI

      10.7567/1347-4065/ab07a3

    • NAID

      210000155940

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Hybrid simulation of light extraction efficiency in multi-quantum-shell NW LED2019
    • Author(s)
      M. Terazawa, M. Ohya, K. Iida, N. Sone, A. Suzuki, K. Nokimura, M. Takebayashi, N. Goto, H. Murakami, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCC17-SCCC17

    • DOI

      10.7567/1347-4065/ab06b6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible2019
    • Author(s)
      D Tanaka, H Kurokawa, S Kamiyama, T Takeuchi, M Iwaya, I Akasaki
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 34-37

    • DOI

      10.4028/www.scientific.net/msf.963.34

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces2019
    • Author(s)
      Wataru Muranaga, Takanobu Akagi, Ryouta Fuwa, Shotaro Yoshida, Junichiro Ogimoto, Yasuto Akatsuka, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
    • Journal Title

      Jaoanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCC01-SCCC01

    • DOI

      10.7567/1347-4065/ab1253

    • NAID

      210000155770

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055

  • [Journal Article] Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire LEDs by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition2019
    • Author(s)
      N. Sone, A. Suzuki, H. Murakami, N. Goto, M. Terazawa, W. Lu , D.-P. Han, K. Iida, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      phys. Stat. sol. (a)

      Volume: None Issue: 7 Pages: 1900715-1900715

    • DOI

      10.1002/pssa.201900715

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] 窒化物半導体による青色レーザーおよび光電変換素子の現状と展望2018
    • Author(s)
      竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
    • Journal Title

      レーザー研究

      Volume: 46 Pages: 711-715

    • NAID

      130007957688

    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] 高効率 GaN 面発光レーザの現状と展望2018
    • Author(s)
      竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
    • Journal Title

      電子情報通信学会論文誌 C

      Volume: 101(8) Pages: 312-318

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] 高効率GaN面発光レーザの現状と展望2018
    • Author(s)
      竹内　哲也 上山　智 岩谷　素顕 赤﨑　勇
    • Journal Title

      電子情報通信学会論文誌 C

      Volume: J101-C Pages: 312-318

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing2018
    • Author(s)
      Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya,
    • Journal Title

      Phys. Status Solidi B

      Volume: 1700506 Issue: 5 Pages: 1700506-1700506

    • DOI

      10.1002/pssb.201700506

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416

  • [Journal Article] A GaN-Based VCSEL with a Convex Structure for Optical Guiding2018
    • Author(s)
      Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Journal Title

      Physica Status Solidi A

      Volume: 1700648 Issue: 10 Pages: 1700648-1700648

    • DOI

      10.1002/pssa.201700648

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416

  • [Journal Article] GaN 系量子殻構造の成長と光学特性評価2018
    • Author(s)
      上山 智・竹内 哲也・岩谷 素顕・赤﨑 勇
    • Journal Title

      日本結晶成長学会誌

      Volume: 45

    • NAID

      130006727555

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Journal Article] GaInN 量子井戸を用いた黄緑色発光ダイオードの作製2018
    • Author(s)
      吉永純也、市川竜弥、竹内哲也、岩谷素顕、上山智、赤崎勇
    • Journal Title

      名城大学総合研究所紀要

      Volume: 23 Pages: 41-44

    • NAID

      40021636845

    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] LED(発光ダイオード)からLD(半導体レーザー)へ : 未来の光源としての期待2018
    • Author(s)
      竹内 哲也
    • Journal Title

      工業教育資料

      Volume: 380 Pages: 7-11

    • NAID

      40021639635

    • Open Access
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates2018
    • Author(s)
      Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 484 Pages: 50-55

    • DOI

      10.1016/j.jcrysgro.2017.12.036

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy2017
    • Author(s)
      Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 111 Issue: 16 Pages: 162102-162102

    • DOI

      10.1063/1.5008258

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector2017
    • Author(s)
      Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 111 Issue: 19 Pages: 191103-191103

    • DOI

      10.1063/1.5001979

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN2017
    • Author(s)
      Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 480 Pages: 90-95

    • DOI

      10.1016/j.jcrysgro.2017.10.018

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer2017
    • Author(s)
      Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    • Journal Title

      Scientific Reports

      Volume: 7 Issue: 1 Pages: 2944-2944

    • DOI

      10.1038/s41598-017-03151-8

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy2017
    • Author(s)
      Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 1 Pages: 015504-015504

    • DOI

      10.7567/jjap.56.015504

    • NAID

      210000147346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PLANNED-16H06416

  • [Journal Article] Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template2017
    • Author(s)
      Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 2 Pages: 025502-025502

    • DOI

      10.7567/apex.10.025502

    • NAID

      210000135770

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PLANNED-16H06416

  • [Journal Article] Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer2017
    • Author(s)
      Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Physica Status Solidi C

      Volume: - Issue: 8 Pages: 1600243-1600243

    • DOI

      10.1002/pssc.201600243

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] n型導電性AlInN/GaN多層膜反射鏡を有するGaN系面発光レーザーの室温連続動作2017
    • Author(s)
      竹内哲也
    • Journal Title

      光学

      Volume: 46

    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Journal Article] Theoretical investigation of nitride nanowire-based quantum-shell lasers2017
    • Author(s)
      Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
    • Journal Title

      Physica Status Solidi A

      Volume: - Issue: 8 Pages: 1600867-1600867

    • DOI

      10.1002/pssa.201600867

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019

  • [Journal Article] Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction2016
    • Author(s)
      Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FL03-05FL03

    • DOI

      10.7567/jjap.55.05fl03

    • NAID

      210000146566

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] GaInN-based tunnel junctions with graded layers2016
    • Author(s)
      Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 8 Pages: 081005-081005

    • DOI

      10.7567/apex.9.081005

    • NAID

      210000138004

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PROJECT-15K13959

  • [Journal Article] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors2016
    • Author(s)
      Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 10 Pages: 102101-102101

    • DOI

      10.7567/apex.9.102101

    • NAID

      210000138061

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] Electrical properties of n-type AlGaN with high Si concentration2016
    • Author(s)
      Kunihiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FE02-05FE02

    • DOI

      10.7567/jjap.55.05fe02

    • NAID

      210000146516

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-15H02019

  • [Journal Article] Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals2016
    • Author(s)
      Yuma Yamamoto, Akira Yoshikawa, Toshiki Kusafuka, Toshiki Okumura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FJ07-05FJ07

    • DOI

      10.7567/jjap.55.05fj07

    • NAID

      210000146549

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors2016
    • Author(s)
      Akira Yoshikawa, Yuma Yamamoto, Takuya Murase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FJ04-05FJ04

    • DOI

      10.7567/jjap.55.05fj04

    • NAID

      210000146546

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells2016
    • Author(s)
      Takashi Furuta, Kenjo Matsui, Kosuke Horikawa, Kazuki Ikeyama, Yugo Kozuka, Shotaro Yoshida, Takanobu Akagi, Tetsuya Takeuchi, Satoshi Kamiyama
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FJ11-05FJ11

    • DOI

      10.7567/jjap.55.05fj11

    • NAID

      210000146553

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors2016
    • Author(s)
      Shotaro Yoshida, Kazuki Ikeyama, Toshiki Yasuda, Takashi Furuta, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FD10-05FD10

    • DOI

      10.7567/jjap.55.05fd10

    • NAID

      210000146512

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045

  • [Journal Article] GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction2016
    • Author(s)
      Junya Osumi, Koji Ishihara, Taiji Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FD11-05FD11

    • DOI

      10.7567/jjap.55.05fd11

    • NAID

      210000146513

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] 窒化物半導体面発光レーザーの現状2016
    • Author(s)
      竹内哲也、岩谷素顕、上山 智、赤﨑 勇
    • Journal Title

      照明学会誌

      Volume: 100 Pages: 189-189

    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article] 窒化物半導体面発光レーザの現状と照明応用に向けた将来展望2016
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤崎　勇
    • Journal Title

      J. Illum. Engng. Inst. Jpn.

      Volume: 100 Pages: 189-192

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] GaNSb alloys grown with H2 and N2 carrier gases2016
    • Author(s)
      Daisuke Komori, Kaku Takarabe, Tetsuya Takeuchi, Takao Miyajima, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 5S Pages: 05FD01-05FD01

    • DOI

      10.7567/jjap.55.05fd01

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K13959, KAKENHI-PROJECT-26286045

  • [Journal Article] Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges2015
    • Author(s)
      Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano
    • Journal Title

      Physica Status Solidi (a)

      Volume: 212 Issue: 5 Pages: 920-924

    • DOI

      10.1002/pssa.201431730

    • Description
      オンラインのみ
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-26286045

  • [Journal Article] GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE2015
    • Author(s)
      Daichi Minamikawa, Masataka Ino, Shunsuke Kawai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Journal Title

      Physica Status Solidi (b)

      Volume: 252 Issue: 5 Pages: 1127-1131

    • DOI

      10.1002/pssb.201451507

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] Low Resistive and Low Absorptive Nitride-Based Tunnel Junctions2015
    • Author(s)
      Daichi Minamikawa, Daiki Takasuka, Masataka Ino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Journal Title

      2014 MRS Fall Meeting Proceeding

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template2015
    • Author(s)
      D.Khan, S.Takeuchi, Y.Nakamura, K.Nakamura, T.Arauchi, H.Miyake, K.Hiramatsu, Y.Imai, S.Kimura, A.Sakai
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 411 Pages: 38-41

    • DOI

      10.1016/j.jcrysgro.2014.10.052

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011

  • [Journal Article] Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles2015
    • Author(s)
      Daisuke Iida, Ahmed Fadil, Yuntian Chen, Yiyu Ou, Oleksii Kopylov, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Haiyan Ou
    • Journal Title

      AIP Publishing

      Volume: 5 Issue: 9 Pages: 097169-097169

    • DOI

      10.1063/1.4931948

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Journal Article]2014
    • Author(s)
      H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and Amano
    • Journal Title

      Appl. Phys. Exp.

      Volume: 7 Pages: 341041-341041

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] 分極制御AlGaN : 層設計と結晶成長2014
    • Author(s)
      竹内哲也、岩谷素顕、上山智、天野浩、赤﨑勇
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 21-32

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Journal Article] GaNSbのSb取り込みと表面形態に関する検討2014
    • Author(s)
      小森 大資, 笹島 浩希, 鈴木 智行,竹内 哲也, 上山 智, 岩谷 素顕, 赤崎 勇
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 114 Pages: 7-10

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy2014
    • Author(s)
      Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 390 Pages: 46-50

    • DOI

      10.1016/j.jcrysgro.2013.12.023

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Journal Article] Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template2014
    • Author(s)
      T.Arauchi, S.Takeuchi, K.Nakamura, K.Dinh, Y.Nakamura, H.Miyake, K.Hiramatsu, A. Sakai
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 211 Issue: 4 Pages: 731-735

    • DOI

      10.1002/pssa.201300461

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011

  • [Journal Article] Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions2014
    • Author(s)
      M. Watanabe, K. Nakajima, M. Kaga, Y. Kuwano, D. Minamikawa, T. Suzuki, K. Yamashita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL06-05FL06

    • DOI

      10.7567/jjap.53.05fl06

    • NAID

      210000143866

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] 分極制御AlGaN：層設計と結晶成長2014
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、天野　浩、赤﨑　勇
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 21-32

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
    • Author(s)
      勝野翔太、林　健人、安田俊輝、岩谷素顕、竹内哲也、上山　智、赤﨑　勇、天野　浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 114 Pages: 75-80

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Journal Article] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
    • Author(s)
      勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 114 Pages: 75-80

    • Data Source
      KAKENHI-PROJECT-25000011

  • [Journal Article]2014
    • Author(s)
      M. Watanabe, K. Nakajima, M. Kaga, Y. Kuwano, D. Minamikawa, T. Suzuki, K. Yamashita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Multijunction GaInN-based solar cells using a tunnel junction2014
    • Author(s)
      H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 3 Pages: 341041-341044

    • DOI

      10.7567/apex.7.034104

    • NAID

      210000137029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures2013
    • Author(s)
      T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JJ05-08JJ05

    • DOI

      10.7567/jjap.52.08jj05

    • NAID

      210000142710

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015, KAKENHI-PROJECT-25000011

  • [Journal Article]2013
    • Author(s)
      Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article]2013
    • Author(s)
      T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and Isamu Akasaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions2013
    • Author(s)
      Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JK12-08JK12

    • DOI

      10.7567/jjap.52.08jk12

    • NAID

      210000142725

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] AlN mole fraction dependence of polarization induced hole concentrations in GaN/AlGaN heterostructures2013
    • Author(s)
      T. Yasuda, K. Yagi, Tomoyuki Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes2013
    • Author(s)
      Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 82 Issue: 8S Pages: 08JG07-08JG07

    • DOI

      10.7567/jjap.52.08jg07

    • NAID

      210000142682

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24686003, KAKENHI-PROJECT-25000011

  • [Journal Article]2013
    • Author(s)
      M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] GaInN-based tunnel junctions in n-p-n light emitting diodes2013
    • Author(s)
      M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • NAID

      210000142699

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Combination of Indium-in Oxide and SiO_2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes2013
    • Author(s)
      Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Journal Title

      physica status solidi C

      Volume: 10 Issue: 11 Pages: 1537-1540

    • DOI

      10.1002/pssc.201300265

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Journal Article] GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes2013
    • Author(s)
      M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JH06-08JH06

    • DOI

      10.7567/jjap.52.08jh06

    • NAID

      210000142699

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates2012
    • Author(s)
      K.Yagi, M. Kaga, K. Yamashita, K. Takeda, M. Iwaya, T. Takeuchi,S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 51 Issue: 5R Pages: 051001-051001

    • DOI

      10.1143/jjap.51.051001

    • NAID

      210000140586

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] 窒化物半導体面発光レーザの可能性2011
    • Author(s)
      竹内哲也
    • Journal Title

      名城大学理工学部研究報告

      Volume: 51号 Pages: 60-67

    • NAID

      40019831258

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22860064

  • [Journal Article] 窒化物半導体トンネル接合の作製2011
    • Author(s)
      加賀 充、飯田大輔、北野　司、山下 浩司、矢木 康太、岩谷 素顕、竹内 哲也、上山 智、赤崎 勇、天野 浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 105-110

    • NAID

      110008725972

    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article]2011
    • Author(s)
      山下浩司、加賀充、矢木康太、鈴木敦、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 99-99

    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] AlNテンプレートを用いた高品質AlN/GaN多層膜反射鏡の作製2011
    • Author(s)
      矢木 康太、加賀 充、山下 浩司、竹田 健一郎、岩谷 素顕、竹内 哲也、上山 智、赤崎 勇、天野 浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 89-93

    • NAID

      110008725969

    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article]2011
    • Author(s)
      加賀充、飯田大輔、北野司、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 105-105

    • Data Source
      KAKENHI-PROJECT-23560015

  • [Journal Article] III族窒化物半導体トンネル接合を用いた電流経路の検討2011
    • Author(s)
      山下 浩司、加賀 充、矢木 康太、鈴木敦志、岩谷 素顕、竹内 哲也、上山 智、赤崎 勇、天野 浩
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 99-104

    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 埋込p層を有する発光素子の製造方法2021
    • Inventor(s)
      竹内哲也、上山智、岩谷素顕、赤﨑勇
    • Industrial Property Rights Holder
      名城大
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2021-018091
    • Filing Date
      2021
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Patent] 偏光制御された面発光レーザー素子2021
    • Inventor(s)
      竹内哲也、上山智、岩谷素顕、赤﨑勇、倉本大
    • Industrial Property Rights Holder
      名城大、スタンレー電気
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2021-135105
    • Filing Date
      2021
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Patent] 半導体発光素子および半導体発光素子の製造方法2019
    • Inventor(s)
      上山智、竹内哲也、岩谷素顕、赤崎勇、他
    • Industrial Property Rights Holder
      名城大、豊田合成、小糸製作所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2019-182829
    • Filing Date
      2019
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Patent] 窒化物半導体多層膜反射鏡の製造方法2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学、スタンレー
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 垂直共振器型発光素子2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 半導体多層膜反射鏡及び垂直共振器型発光素子2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 低抵抗窒化物半導体トンネル接合を用いたレーザーダイオード2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 垂直共振器型面発光素子2019
    • Inventor(s)
      竹内哲也　他
    • Industrial Property Rights Holder
      名城大学、スタンレー
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 半導体発光素子および半導体発光素子の製造方法2019
    • Inventor(s)
      上山智、竹内哲也、岩谷素顕、赤崎勇、W. Lu、他
    • Industrial Property Rights Holder
      名城大、豊田合成、小糸製作所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2019-164083
    • Filing Date
      2019
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Patent] 窒化物半導体多層膜反射鏡2018
    • Inventor(s)
      竹内哲也、平岩　恵、岩山　章、上山　智、岩谷　素顕、赤﨑　勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2018-228857
    • Filing Date
      2018
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 発光体発光素子および発光体発光素子の製造方法2017
    • Inventor(s)
      上山智、竹内哲也、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-127720
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Patent] ⅲ族窒化物半導体発光素子とその製造方法2017
    • Inventor(s)
      竹内哲也、上山智、岩谷素顕、赤崎勇、小島久範、安田俊輝、飯田一喜
    • Industrial Property Rights Holder
      名城大学、豊田合成
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-217383
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017
    • Inventor(s)
      竹内哲也、岩谷基顕、赤塚泰斗、岩山章、赤﨑勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-217351
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 半導体発光素子および半導体発光素子の製造方法2017
    • Inventor(s)
      上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-127720
    • Filing Date
      2017
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017
    • Inventor(s)
      竹内哲也、岩谷素顕、赤塚泰斗、岩山章、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-217351
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017
    • Inventor(s)
      竹内哲也、不破亮太、岩谷素顕、岩山章、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-217348
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子 番号：特願2017-2173482017
    • Inventor(s)
      竹内哲也、岩谷基顕、不破綾太、岩山章、赤﨑勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-217348
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 窒化物半導体光素子2017
    • Inventor(s)
      竹内哲也、岩谷基顕、上山智、赤﨑勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-239235
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Patent] 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法2016
    • Inventor(s)
      竹内哲也、岩谷素顕、赤﨑勇、赤木孝信
    • Industrial Property Rights Holder
      竹内哲也、岩谷素顕、赤﨑勇、赤木孝信
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-144041
    • Filing Date
      2016-07-22
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] 窒化物半導体素子及びその製造方法2016
    • Inventor(s)
      竹内哲也、岩谷素顕、赤﨑勇、赤塚泰斗、赤木孝信
    • Industrial Property Rights Holder
      竹内哲也、岩谷素顕、赤﨑勇、赤塚泰斗、赤木孝信
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-154227
    • Filing Date
      2016-08-05
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] 窒化物半導体AlGaN系紫外半導体レーザ2016
    • Inventor(s)
      岩谷素顕、竹内哲也、上山智、赤崎勇、川瀬祐太、安田俊樹
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-242891
    • Filing Date
      2016-12-15
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Patent] 窒化物半導体発光素子2016
    • Inventor(s)
      竹内哲也、高須賀大貴、岩谷素顕、赤﨑勇
    • Industrial Property Rights Holder
      竹内哲也、高須賀大貴、岩谷素顕、赤﨑勇
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-038890
    • Filing Date
      2016-03-01
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] npn型窒化物半導体発光素子の製造方法、およびnpn型窒化物半導体発光素子2015
    • Inventor(s)
      竹内哲也、桑野侑香、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015-02-23
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] 窒化物半導体発光素子及びその製造方法2015
    • Inventor(s)
      竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-084802
    • Filing Date
      2015-04-17
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Patent] 窒化物半導体発光素子及びその製造方法2015
    • Inventor(s)
      竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-084802
    • Filing Date
      2015-04-17
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] 窒化物半導体発光素子2014
    • Inventor(s)
      竹内哲也、岩谷素顕、赤崎　勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-06-16
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Patent] 窒化物半導体発光素子の製造方法、および窒化物半導体発光素子2014
    • Inventor(s)
      竹内哲也、桑野侑香、岩谷素顕、赤崎 勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-035192
    • Filing Date
      2014-02-26
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 電流狭窄を有する窒化物半導体発光素子とその製造方法2013
    • Inventor(s)
      竹内哲也、桑野侑香、岩谷素顕、上山智、赤﨑勇
    • Industrial Property Rights Holder
      竹内哲也、桑野侑香、岩谷素顕、上山智、赤﨑勇
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-025361
    • Filing Date
      2013-02-13
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 電流狭窄を有する窒化物半導体発光素子とその製造方法2013
    • Inventor(s)
      竹内哲也、桑野侑香、岩谷素顕、上山 智、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-025361
    • Filing Date
      2013-02-13
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 半導体発光素子アレイおよびその製造方法2013
    • Inventor(s)
      竹内哲也、渡邉雅大、岩谷素顕、赤崎 勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-155760
    • Filing Date
      2013-07-26
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 窒化物半導体発光素子2013
    • Inventor(s)
      竹内哲也、岩谷素顕、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-06-18
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Patent] 半導体発光素子アレイおよびその作成方法2013
    • Inventor(s)
      竹内哲也、 渡邉雅大、岩谷素顕、赤崎 勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-155760
    • Filing Date
      2013-07-26
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Patent] 分極を有する半導体を用いた半導体光素子2013
    • Inventor(s)
      竹内哲也、岩谷素顕、赤崎勇、天野浩
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-12-11
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Patent] 発光素子2010
    • Inventor(s)
      竹内哲也, 他
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      2010-144170
    • Filing Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-22860064

  • [Presentation] N-type conducting Si-doped AlInN/GaN DBRs with AlGaN graded layers2022
    • Author(s)
      Kenta Kobayashi, Kana Shibata, Tsuyoshi Nagasawa, Ruka Watanabe, Kohdai Usui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
    • Organizer
      OPIC LEDIA2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 高品質導電性AlInN/GaN DBR形成に向けた水素クリーニング2022
    • Author(s)
      柴田 夏奈、稲垣 徹郎、長澤 剛、竹内 哲也、上山 智、岩谷 素顕 第69回応用物理学会春季学術講演会
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 組成傾斜p-AlGaN層とp-Al0.5Ga0.5Nコンタクト層を有する深紫外LED2022
    • Author(s)
      岩月 梨恵、藤田 真帆、石黒 永孝、竹内 哲也、上山 智、岩谷 素顕、永田賢吾、奥野浩司、齋藤義樹
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] GaNトンネル接合によるpコンタクト形成2022
    • Author(s)
      竹内哲也、上山智、岩谷素顕
    • Organizer
      応用物理学会　先進パワー半導体分科会　第8回個別討論会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] GaN系面発光レーザ構造のその場反射率スペクトル測定2022
    • Author(s)
      長澤 剛、柴田 夏奈、稲垣 徹郎、竹内 哲也、上山 智、岩谷 素顕
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] GaN-based VCSELs with conductive AlInN/GaN DBRs2022
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
    • Organizer
      ICMOVPE XX
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] MOVPE growth of long-wavelength GaInN single layers on GaN substrates2022
    • Author(s)
      Motoki Nakano, Shintaro Ueda, Ruka Watanabe, Tsuyoshi Nagasawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
    • Organizer
      OPIC LEDIA2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] GaN-based tunnel junctions and laser diodes2022
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
    • Organizer
      IWN2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] GaNトンネル接合の現状とレーザーダイオードへの応用2022
    • Author(s)
      竹内哲也、上山智、岩谷素顕
    • Organizer
      レーザー学会学術講演会　第42回年次大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] MOVPE-grown GaN-based tunnel junctions and optoelectronic devices2022
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
    • Organizer
      SPIE Photonics West 2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] その場Mg活性化を用いたGaNトンネル接合2022
    • Author(s)
      神谷 直樹、伊藤 太一、岩月 梨恵、上山 智、岩谷 素顕、竹内 哲也
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 近接昇華法による4H-SiCのB,N高濃度コドーピングに関する検討2021
    • Author(s)
      山根耀真、Weifang Lu、柳井光佑、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlGaN系UV-B LD構造における注入効率向上に関する検討2021
    • Author(s)
      薮谷歩武，大森智也，田中隼也，山田和輝，佐藤恒輔，岩山章，岩谷素顕，竹内哲也，上山智，赤﨑勇，三宅秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN 系量子殻の光学特性改善のためのGaInN/GaN超格子の検討2021
    • Author(s)
      中山奈々美、Weifang Lu、曽根直樹、伊藤和真、宮本義也、奥田廉士、勝呂紗衣、神野幸美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN系VCSELに向けた微小段差による横方向光閉じ込め・電流狭窄構造2021
    • Author(s)
      田中 実乃里、飯田 涼介、小田 薫、稲垣 徹郎、 柴田 夏奈、長澤 剛、竹内 哲也、上山 智、岩谷 素顕
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Improvement of device performance in UV-B laser diodes2021
    • Author(s)
      M. Iwaya, S. Tanaka, Y. Ogino, M. Shimokawa,K. Yamada, T. Omori, S. Ishizuka, S. Teramura,K. Sato, S. Iwayama, T. Takeuchi, S. Kamiyama,I. Akasaki, H. Miyake
    • Organizer
      SPIE Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 組成傾斜p-AlGaN層とp-Al0.4Ga0.6Nコンタクト層を有する深紫外LED2021
    • Author(s)
      岩月 梨恵、速水 一輝、石黒 永孝、竹内 哲也、上山 智、岩谷 素顕
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Nitride-based tunnel junction current confinement structures by Ar plasma irradiation toward VCSELs2021
    • Author(s)
      M. Odawara, K. Kiyohara, S. Iwayama, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
    • Organizer
      ISPlasma2021/IC-PLANTS2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 量子殻特異構造の作製と光デバイス応用2021
    • Author(s)
      上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] In-situ activation of MOVPE-grown GaN tunnel junctions2021
    • Author(s)
      T. Ito, M. Tasaki, M. Odawara, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      ISPlasma2021/IC-PLANTS2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 高温スパッタ法によるScAlMgO4基板上AlNバッファ層の検討2021
    • Author(s)
      寶藏圭祐、韓東杓、眞野稜也、高橋遼、藤木領人、平松稜也、澤井奏人、上山智、竹内哲也、岩谷素顕、赤﨑勇、福田承生、藤井高志
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based Vertical-Cavity Surface-Emitting Lasers with Lattice-Matched AlInN/GaN DBRs2021
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      OPIC LDC2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] In-situ activation of MOVPE-grown GaN tunnel junctions2021
    • Author(s)
      T. Ito, M. Odawara, M. Tasaki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 2つの手法を組み合わせたシミュレーション法によるナノパターン化基板を用いたGaInN系緑色LEDの光取り出し効率の計算2021
    • Author(s)
      平松稜也, 韓東杓, 眞野稜也, 高橋遼, 藤木領人, 澤井奏人, 寶藏圭祐、上山智, 竹内哲也、 岩谷素顕, 赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 量子殻デバイスへのトンネル接合導入のためのm面GaN基板上トンネル接合成長に関する検討2021
    • Author(s)
      山村志織、宮本義也、曽根直樹、Weifang Lu、奥田廉士、伊藤和真、神野幸美、中山奈々美、勝呂紗衣、奥野浩司、水谷浩一、飯田一喜、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] トンネル接合を用いた量子殻レーザの実現に向けたn-GaNへの電極形成に関する検討2021
    • Author(s)
      神野幸美,　奥田廉士,　水谷浩一,　奥野浩司,　飯田一喜,　宮本義也,　山村志織,　曽根直樹,　伊藤和真,　勝呂紗衣,　Weifang Lu、中山奈々美、上山智、竹内哲也、岩谷素顕、赤崎勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Progress in GaN-based VCSEL2021
    • Author(s)
      T. Takeuchi, S. Kamiyama, and M. Iwaya
    • Organizer
      ISLC2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] MOVPE growth of AlInN/GaN DBRs and GaN VCSELs2021
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      CGCT-8 Category 1. III-V Semiconductors and Oxide Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] High InN-mole-fraction GaInN thin layers on GaN substrates grown by MOVPE2021
    • Author(s)
      S. Ueda, Y. Ueshima, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ISPlasma2021/IC-PLANTS2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Thermal oxidation of AlInN surfaces by mist particle supply2021
    • Author(s)
      Hiroki Matsumoto, Sho Iwayama, Norikatsu Koide, Mahito Odawara, Yusuke Ueshima, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Takahiro Maruyama, and Isamu Akasaki
    • Organizer
      ISPlasma2021/IC-PLANTS2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Developments of GaN-based VCSELs with epitaxially grown DBRs2021
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      SPIE OPTO Gallium Nitride Materials and Devices XVI: 11686-3
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Emission wavelength control of GaInN/GaN multi-quantum shells /nanowires grown by metalorganic vapour phase epitaxy2021
    • Author(s)
      K. Ito, W. Lu, N. Sone, Y. Miyamoto, R. Okuda, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] MOVPE growth and fabrication of multi-quantum-shell-based blue lasers2021
    • Author(s)
      S. Kamiyama, W. Lu, N. Sone, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Lateral Mg activation for GaInN blue LEDs with GaN tunnel junctions2021
    • Author(s)
      M. Tasaki, K. Kiyohara, M. Odawara, T. Ito, T. Inagaki, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      ISPlasma2021/IC-PLANTS2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction2021
    • Author(s)
      Y. Miyamoto, N. Sone, W. Lu, K. Ito, R. Okuda, K. Iida, M. Ohya, K. Okuno, K. Mizutani, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlInN/GaN多層膜反射鏡における反射率スペクトルの温度依存性2021
    • Author(s)
      長澤剛、上島佑介、稲垣徹郎、柴田夏奈、竹内哲也、上山智、岩谷素顕、三好実人
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] AlGaN組成傾斜層を有する導電性AlInN/GaNDBRのピット低減2021
    • Author(s)
      柴田夏奈、上島佑介、稲垣徹郎、上田晋太郎、長澤剛、田中実乃里、竹内哲也、上山智、岩谷素顕
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Fabrication of index-guided multi-quantum shell lasers toward room-temperature pulsed lasing operation2021
    • Author(s)
      S. Kamiyama T. Takeuchi, M. Iwaya, and I. Akasaki
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 量子殻/トンネル接合を用いたナノワイヤLD実現に向けたGaN結晶中の不純物ドーピング評価2021
    • Author(s)
      曽根直樹、宮本義也、奥田廉士、伊藤和真、山村志織、神野幸美、勝呂紗衣、中山奈々美、奥野浩司、水谷浩一、飯田一喜、Weifang Lu、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN系量子殻LEDのEL特性2021
    • Author(s)
      勝呂紗衣、Weifang Lu、伊藤和真、中山奈々美、曽根直樹、奥田廉士、宮本義也、神野幸美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Device fabrication for multiple quantum shell nanowires based laser diodes2021
    • Author(s)
      R. Okuda, W. Lu, N. Sone, Y. Miyamoto, K. Ito, K. Iida, M. Ohya, K. Okuno, K. Mizutani, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 量子殻活性層及びトンネル接合を有するレーザ構造の作製と評価2021
    • Author(s)
      奥田廉士、Weifang Lu、曽根直樹、飯田一喜、奥野浩司、水谷浩一、宮本義也、伊藤和真、神野幸美、勝呂紗衣、中山奈々美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 高品質AlGaN結晶の結晶成長とその上に作製したUV-B半導体レーザ2020
    • Author(s)
      岩谷素顕、佐藤恒輔、田中隼也、手良村昌平、大森智也、山田和輝、石塚彩花、下川萌葉、荻野雄矢、岩山章、竹内哲也、上山智、赤﨑勇、三宅秀人
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] トンネル接合を用いた屈折率導波型量子殻レーザ構造の検討2020
    • Author(s)
      奥田廉士、Weifang Lu、曽根直樹、飯田一喜、大矢昌輝、奥野浩司、水谷浩一、宮本義也、伊藤和真、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ITOを用いた窒化物半導体量子殻LED長波長発光デバイスの作製2020
    • Author(s)
      伊藤和真、Weifang Lu、曽根直樹、宮本義也、奥田廉士、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlGaN UVB レーザダイオードのキャリア注入効率の算出2020
    • Author(s)
      佐藤恒輔、大森智也、山田和輝、田中隼也、石塚彩花、手良村昌平、岩山章、岩谷素顕、三宅秀人、竹内哲也、上山智、赤﨑勇
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ミスト供給法を用いたAlInN層の熱酸化の低温化2020
    • Author(s)
      松本浩輝、岩山章、小出典克、小田原麻人、竹内哲也、上山智、岩谷素顕、丸山隆浩、赤崎 勇
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ナノワイヤ径及びピッチ制御によるナノワイヤLEDの発光波長制御2020
    • Author(s)
      伊藤和真、W. Lu、曽根直樹、村上ヒデキ、後藤七美、寺澤美月、宮本義也、奥田廉士、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] トンネル接合を用いた量子殻LD 実現に向けた結晶成長評価2020
    • Author(s)
      曽根直樹、奥田廉士、宮本義也、伊藤和真、飯田一喜、奥野浩司、水谷浩一、大矢昌輝、Weifang Lu、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] サファイア基板上AlGaN材料UVBレーザダイオード の構造検討2020
    • Author(s)
      佐藤恒輔，山田和輝, 石塚 彩花,田中隼也, 大森智也, 手良村昌平, 岩山章, 三宅秀人,岩谷 素顕, 竹内哲也, 上山智, 赤﨑勇
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ミスト供給法を用いたAlInN層の熱酸化2020
    • Author(s)
      松本 浩輝、岩山 章、小出 典克、小田原 麻人、竹内 哲也、上山 智、岩谷 素顕、丸山 隆浩、赤崎 勇
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 組成傾斜AlGaNクラッド層を用いた UV -B LDの内部ロス評価2020
    • Author(s)
      大森智也、石塚彩花、田中隼也、佐藤恒輔、安江信次、荻野雄矢、山田和輝、手良村昌平、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ミスト供給法を用いたAllnN層の熱酸化の低温化2020
    • Author(s)
      松本浩輝、岩山章、小出典克、小田原麻人、竹内哲也、上山智、岩谷素顕、丸山隆浩、赤崎勇
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] AlGaN/AlNの分極を利用したp型伝導2020
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      結晶加工と評価技術第145委員会　第169回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] UV -B LDにおける分極ドーピングp型AlGaNクラッド層のAl組成およびMg濃度依存性2020
    • Author(s)
      山田和輝、佐藤恒輔、大安江信次、田中隼也、手良村昌平、荻野雄矢、大森智也、石塚彩花、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人、寒川義裕、K. Sakowski
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] ナノパターンを形成したAlNおよび Al0.55Ga0.45N上へのAl0.55Ga0.45Nの結晶成長2020
    • Author(s)
      手良村昌平、下川萌葉, 岩山章, 岩谷素顕 , 竹内哲也, 上山智, 赤﨑勇、正直花奈子、三宅秀人
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 近接昇華法による4H-SiCのB,N高濃度コドーピングに関する検討2020
    • Author(s)
      山根耀真, 田中大稀, W. Lu, 柳井光佑, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GRIN-SCH構造を用いたAlGaN系UV-Bレーザダイオードの最適化2020
    • Author(s)
      田中隼也、佐藤恒輔、安江信次、荻野雄矢、山田和輝、石塚彩花、手良村昌平、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人
    • Organizer
      第８１回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 量子殻/トンネル接合発光デバイスの実現に向けたn-GaN埋め込み成長に関する検討2020
    • Author(s)
      宮本義也、後藤七美、曽根直樹、飯田一喜、W. Lu、村上ヒデキ、寺澤美月、伊藤和真、奥田廉士、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaNトンネル接合を備えたLEDにおける横方向Mg活性化の最適化2020
    • Author(s)
      田先美貴子、清原一樹、小田原麻人、伊藤太一、竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      電子情報通信学会 研究会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 量子殻活性層およびトンネル接合を有するナノワイヤ発光デバイス実現に向けた結晶成長に関する検討2020
    • Author(s)
      宮本義也、曽根直樹、Weifang Lu、奥田廉士、伊藤和真、奥野浩司、飯田一喜、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 高温アニールしたスパッタAlNテンプレート上に成長した Al 0.6Ga 0.4N厚膜のホモエピタキシャルAlN層依存性2020
    • Author(s)
      下川萌葉，手良村昌平，岩山章，岩谷素顕，竹内哲也，上山智，赤﨑勇，三宅秀人
    • Organizer
      第49回結晶成長国内会議
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] n型AlInN/GaN多層膜反射鏡のSi濃度依存性2020
    • Author(s)
      上島 佑介、稲垣 徹郎、飯田 涼介、岩山 章、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] Crystal growth and optical property2020
    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Organizer
      SPIE Photonics West 2020
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 窒化物半導体光デバイスの現状と展望2020
    • Author(s)
      竹内哲也
    • Organizer
      第4回パワーエレクトロニクス等の研究開発の在り方に関する検討会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00353

  • [Presentation] 高濃度のホウ素・窒素が添加された蛍光SiCにおける光学特性2019
    • Author(s)
      田中大稀，W. Lu，上山智，竹内哲也，岩谷素顕，赤﨑勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Epitaxy and Performance of VCSEL Structures2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] AlInN/GaN多層膜反射鏡を有するGaN系面発光レーザーの偏波特性2019
    • Author(s)
      小田 薫、飯田 涼介、岩山 章、清原 一樹、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      電子情報通信学会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Blue edge-emitting laser diodes with AlInN/AlGaN multiple cladding layers2019
    • Author(s)
      Kei Arakawa, Kohei Miyoshi, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Cathodoluminescence enhancement in InGaN/GaN multiquantum shell/GaN nanowires core structure by using AlGaN undershells2019
    • Author(s)
      W. Lu, N. Goto, N. Sone, K. Iida, A. Suzuki, H. Murakami, M. Terazawa, K. Nokimura, M. Takebayashi, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] その場反り測定によるAlInN/GaN多層膜反射鏡の高精度組成制御2019
    • Author(s)
      平岩 恵、村永 亘、岩山 章、清原 一樹、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Crystal growth and optical property of GaInN/GaN multi-quantum shells and GaN nanowire cores by metalorganic vapor phase epitaxy2019
    • Author(s)
      S. Kamiyama, W. Lu, T. Takeuchi, M. Iwaya, I. Akasaki
    • Organizer
      IEEE Photonics Conference 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Developments of GaN-based VCSELs with AlInN/GaN DBRs2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Workshop on Nitride Semiconductor Lasers Program
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN系面発光レーザーの 進展と応用展開2019
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] White LED in combination with bulk and porous fluorescent SiC2019
    • Author(s)
      S. Kamiyama, A. Suzuki, W. Lu, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Statas and Prospects of GaN-based VCSELs2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Photonic Device Workshop 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Statas and Prospects of GaN-based VCSELs2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ICAE 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] MOCVD法によるナノワイヤLED上n-GaNキャップ層成長2019
    • Author(s)
      後藤七美、曽根直樹、飯田一喜、Weifang Lu、鈴木敦志、軒村恭平、竹林穣、村上ヒデキ、寺澤美月、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs with AlInN/GaN distributed Bragg reflectors (DBRs)2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      21th International Vacuum Congress
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] "高品質AlInN/GaN多層膜反射鏡のための その場観察反り測定"2019
    • Author(s)
      平岩 恵, 村永 亘 , 岩山 章 竹内 哲也, 上山 智, 岩谷 素顕, 赤﨑 勇
    • Organizer
      第66回 応用物理学会春期学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN系面発光レーザーの 現状と展望2019
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      第5回窒化物半導体に関する最先端技術研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Epitaxy of GaN-based VCSELs2019
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ICCGE-19, OMVPE-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Polarization characteristics in GaN-based VCSELs2019
    • Author(s)
      Kaoru Oda, Ryosuke Iida, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      LEDIA2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 面発光レーザの応用へ向けたArプラズマ照射による窒化物半導体トンネル接合電流狭窄構造2019
    • Author(s)
      小田原 麻人、不破 綾太、清原 一樹、岩山 章、竹内 哲也、岩谷 素顕、上山 智、赤崎 勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 近接昇華法を用いた6H-SiCへのB,Nの高濃度コドーピングの検討2019
    • Author(s)
      田中大稀, 黒川広朗, 上山智, 岩谷素顕, 竹内哲也, 赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] コアシェル型ナノワイヤLEDのp-GaNシェル成長に関する検討2019
    • Author(s)
      曽根直樹、後藤七美、飯田一喜、大矢昌輝、Weifang Lu、村上ヒデキ、寺澤美月、埋橋淳, 大久保忠勝, 宝野和博, 上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] In-situ curvature monitoring of AlInN/GaN DBRs2019
    • Author(s)
      Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetusya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      LEDIA2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Embedded SiO2 waveguide structure for GaInN VCSELs2019
    • Author(s)
      Ryosuke iida, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 12th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] ミラー形成にTMAHTMAHTMAHウェットエチングを用いたUV デバイスの デバイスのデバイスの特性評価2019
    • Author(s)
      安江信次，佐藤恒輔，川瀬雄太，池田隼也、櫻木勇介，岩山章，岩谷素顕，上山智，竹内哲也，赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN based VCSELs using conducting AlInN/GaN DBRs with graded interfaces2019
    • Author(s)
      Yusuke Ueshima, Wataru Muranaga, Ryosuke Iida, Sho Iwayama, Tetsuya Takeuchi, Satoshi, Kamiyama, Motoaki Iwaya, Isamu Aasaki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 量子殻構造LEDのp型殻用電極に関する検討2019
    • Author(s)
      鈴木敦志, 村上ヒデキ, 軒村恭平,竹林 穣,後藤七美, 寺澤美月, Weifang Lu,曽根直樹, 飯田一喜,大矢昌輝, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 青色LEDおよびレーザーの開発とその応用2019
    • Author(s)
      竹内哲也
    • Organizer
      2019年度　日本医用歯科機器学会　第29回研究発表大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] AlInN/GaN DBRs for long-wavelength GaN-based VCSELs2019
    • Author(s)
      Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi, Kamiyama, Motoaki Iwaya, Isamu Aasaki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 世界を変えた青色LED、世界を変える青色レーザー2019
    • Author(s)
      竹内哲也
    • Organizer
      軽金属学会東海支部　2019年度　第1回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Improved Uniform Current Injection into Core-shell Type GaInN Nanowire LEDs by Optimizing Growth Condition and Indium-Tin-Oxide Deposition2019
    • Author(s)
      N. Sone, A. Suzuki, H. Murakami, K. Nokimura, Minoru Takebayashi, Nanami Goto, Mizuki Terazawa, W. Lu, K. Iida, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Lateral current distribution in GaN-based VCSELs with conducting AlInN/GaN DBRs2019
    • Author(s)
      Ryosuke iida, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaNナノワイヤとGaInN/GaN多重量子殻のMOVPE成長と構造評価2019
    • Author(s)
      後藤七美、曽根直樹、飯田一喜、W. Lu、村上ヒデキ、寺澤美月、埋橋淳, 関口隆史, 大久保忠勝, J. Chen, W. Yi, 宝野和博、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs using conducting AlInN/GaN DBRs with graded interfaces2019
    • Author(s)
      Yusuke Ueshima, Wataru Muranaga, Ryosuke Iida, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      LEDIA2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 様々なAlNテンプレート上に形成した緩和AlGaN層に作製したUV-Bレーザ2019
    • Author(s)
      手良村昌平，川瀬雄太, 池田隼也，櫻木勇介，安江信次, 田中隼也，荻野雄矢，岩谷素顕, 竹内哲也, 上山智, 岩山章, 赤﨑勇, 三宅秀人
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] IN-SITU CURVATURE MONITORING OF ALINN/GAN DBRS2019
    • Author(s)
      Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      ICCGE-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 埋め込みSiO2光閉じ込め構造とn型導電性AlInN/GaN DBRを有するGaN系VCSEL2019
    • Author(s)
      飯田 涼介、村永 亘、上島 佑介、岩山 章、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] "Polarization characteristic of GaN-based VCSELs with AlInN/GaN DBRs "2019
    • Author(s)
      Kaoru Oda, Ryosuke Iida,　Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Optical characterization of fluorescent SiC with high boron and nitrogen concentrations2019
    • Author(s)
      D. Tanaka, W. Lu, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN系面発光レーザーの 進展と波長域拡大2019
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      光エレクトロニクス第130委員会 第320回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] MOVPE-grown GaInN laser diodes with GaN tunnel junctions2019
    • Author(s)
      Ryosuke Iida, Kohei Miyoshi, Yuki Kato, Kei Arakawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs2019
    • Author(s)
      N. Goto, N. Sone, K. Iida, W. Lu, A. Suzuki, H. Murkami, M. Terazawa, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 19th International Conference on Crystal Growth and Eptaxy
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 放射光を使ったGaN系混晶半導体とGaN系ナノワイヤの局所構造評価2019
    • Author(s)
      宮嶋孝夫，清木良麻，近藤剣，市川貴登，伊奈稔哲，新田清文，宇留賀朋哉，鶴田一樹，隅谷和嗣，今井康彦，木村滋，安田伸広， 三好実人，今井大地，竹内哲也，上山智
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 高効率緑色LEDのための二重金属Ag/Auナノ粒子による表面プラズモン共鳴波長の制御2019
    • Author(s)
      真野稜也，ハン・ドンピョ,石本聖治,山本賢吾,上山智, 竹内哲也,岩谷素顕,赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Fabrication and Characterization of Multi-Quantum-Shell light emitting diodes with Tunnel Junction2019
    • Author(s)
      H. Murakami, A. Suzuki, K. Nokimura, M. Takebayashi, N. Goto, M. Terazawa, W. Lu, N. Sone, K. Iida, M. Ohya, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Characteristics of GaN-based VCSELs with conducting AlInN/GaN DBRs2019
    • Author(s)
      R. Iida, W. Muranaga, Y. Ueshima, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      SSDM2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 高反射率AlInN/GaN多層膜反射鏡のためのその場観察反り測定2019
    • Author(s)
      平岩恵，村永亘，岩山章，竹内哲也，上山智，岩谷素顕，赤﨑勇
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Lateral current distribution in GaN-based VCSELs with conducting AlInN/GaN DBRs2019
    • Author(s)
      Ryosuke Iida, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      LEDIA2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Growth of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) grown by metal-organic vapor phase epitaxy2018
    • Author(s)
      Naoki Sone, Nanami Goto, Mizuki Terazawa, Hideki Murakami, Kyohei Nokimura, Minoru Takebayashi,, Atsushi Suzuki, Kazuyoshi Iida, Masaki Ohya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlN molar fraction dependence of TMAH wet etching on AlGaN2018
    • Author(s)
      Shinji Yasue, Kosuke Sato, Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, Sho Iwayama, Motoaki Iwaya,, Satoshi Kamiyama, Tetsuya Takeuchi, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] A 1.8mW GaN-based VCSEL with an n-type conducting bottom DBR2018
    • Author(s)
      Wataru Muranaga,youta Fuwa, Takanobu Akagi, Sho Iwayama, Shotaro Yoshida,Yasuto Akatsuka, Junichiro Ogimoto, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN VCSELswith semiconductor-based DBRs2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      SPIE photonics Europe
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Low resistive GaN tunnel junctionsgrown by MOVPE2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Photonics West OPTO
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] AlInN/AlGaN多周期クラッド層を用いた青色端面発光レーザダイオード2018
    • Author(s)
      荒川渓, 三好晃平, 竹内哲也, 三好実人, 上山智, 岩谷素顕, 赤﨑勇
    • Organizer
      第10 回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] SiO2埋め込みによる光導波構造を有するIII族窒化物面発光レーザ2018
    • Author(s)
      飯田 涼介, 林 菜摘, 村永 亘, 岩山 章, 竹内 哲也, 上山 智, 岩谷 素顕, 赤﨑 勇
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会(Laser and Quantum Electronics)
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN-based VCSELs: Their Progress and Prospects2018
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      23rd Microoptics Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 深紫外LED発光特性の基板オフ角・方向依存性2018
    • Author(s)
      小島久範、小笠原多久満、金明姫、飯田一善、小出典克、竹内哲也、岩谷素顕、上山智、赤崎勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Realization of high photosensitivity AlGaN-based photosensors2018
    • Author(s)
      Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Akira Yoshikawa
    • Organizer
      International workshop on nitride semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Realization of high performance AlGaN-based UV emitters and detectors2018
    • Author(s)
      Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      International Ceramic Congress,
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlGaN/アニール処理スパッタAlNテンプレート上に作製した紫外レーザ2018
    • Author(s)
      川瀬雄太、池田隼也、櫻木勇介、安江信次、岩山章、金明姫、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅 秀人
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by MOVPE2018
    • Author(s)
      Shunya Otsuki, Daiki Jinno, Hisayoshi Daicho, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlGaN系材料に対するTMAHウェットエッチングのAlNモル分率依存性2018
    • Author(s)
      安江信次、佐藤恒輔、川瀬雄太、池田隼也、櫻木勇介、岩山章、岩谷素顕、上山智、竹内哲也、赤崎勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Electrically-injectedGaN-based VCSELs2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Compound Semiconductor Week 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] n-GaN電流拡散層を用いたGaInN系量子殻LEDの光学シミュレーション2018
    • Author(s)
      寺澤美月、大矢昌輝、飯田一喜、曽根直樹、鈴木敦志、軒村恭平、竹林穣、後藤七美、村上ヒデキ、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors2018
    • Author(s)
      Megumi Sakata, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Kamiyama
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 量子殻構造を有する LED のデバイス特性評価2018
    • Author(s)
      村上ヒデキ、鈴木敦志、軒村恭平、竹林穣、後藤七美、寺澤美月、曽根直樹、飯田一喜、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 深紫外LED発光特性の基板オフ角・方向依存性2018
    • Author(s)
      小島 久範, 小笠原 多久満, 金 明姫, 飯田 一善, 小出 典克, 竹内 哲也, 岩谷 素顕,上山 智, 赤崎 勇
    • Organizer
      第79 回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Growth of GaInN yellow-green LEDs2018
    • Author(s)
      Junya Yoshinaga, Tatsuya Ichikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] UV laser fabricated on relaxed AlGaN high temperature annealed and sputtered AlN Sapphire templates2018
    • Author(s)
      Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, shinji Yasue, Sho Iwayama, Myunghee Kim, Motoaki Iwaya,, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hideto Miyake
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] MOVPE-grown GaN-based tunnel junction and its application2018
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      SPIE Photonics West OPTO
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Reduction of threading dislocation density in AlInN/GaN DBRs for GaN-based vertical-cavity surface-emitting lasers2018
    • Author(s)
      Takanobu Akagi, Yugo Kozuka, Kazuki Ikeyama, Sho Iwayama, Masaru Kuramoto, Tatsuma Saito, Tetsuya, Takeuchi, Satoshi Kamiyama, Motoki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Crystal growth of high quality AlGaN for UV lasers2018
    • Author(s)
      Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN VCSELs with semiconductor-based DBRs2018
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      SPIE photonics Europe
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlInN/GaN DBRs for long-wavelength GaN-based VCSELs2018
    • Author(s)
      Kei Hiraiwa, Wataru Muranaga, Junichiro Ogimoto, Takanobu Akagi, Tetsuya Takeuchi, Satoshi, Kamiyama, Motoaki Iwaya, Isamu Aasaki
    • Organizer
      International Symposium of Growth of III-Nitrides ISGN-7
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Realization of High Performance UV Emitters and detectors by using AlGaN Materials2018
    • Author(s)
      Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      International Conference on Nanomaterials and Nanotechnology
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Study on GaInN/GaN multi-quantum shells for high-performance optoelectronic devices2018
    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Growth of GaInN yellow-green LEDs2018
    • Author(s)
      Junya Yoshinaga, Tatsuya Ichikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International Conference on MOVPE-XIX
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Growth mechanism of GaInN/GaN multi-quantum shells and GaN nanowire structure grown by metalorganic vapor phase epitaxy2018
    • Author(s)
      Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
    • Organizer
      The 19th World Congress on Materials Science and Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Observation of crystal growth of group III nitride semiconductors by using in situ X-ray diffraction attached metalorganic vapor phase epitaxial equipment2018
    • Author(s)
      Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International Conference on MOVPE-XIX
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] AlGaN-based electron beam excitation UV lasers using AlGaN well layer2018
    • Author(s)
      Yusuke Sakuragi, Yuta Kawase, Jyunya Ikeda, Shinji Yasue, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama,, Tetsuya Takeuchi, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] MOVPE　growth of thick and smooth surface GaInN on semipolar (1011) and (1011) GaN substrate and it sapplication of solar cell2018
    • Author(s)
      Noboru Muramatsu, Toru Takanishi, Syun Mitsufujji, Kazuya Takahashi, Motoaki Iwayaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International Conference on MOVPE-XIX
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] MOVPE-grown GaN-based tunnel junction and its application2018
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      Photonics West OPTO
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaInN系面発光レーザーの開発と展望2018
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      レーザー学会学術講演会第38回年次大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Effects of underlying layers on electrical properties of p-(Al)GaN/p-AlGaN superlattices2018
    • Author(s)
      Kosuke Sato,Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 緑色LEDにおける表面プラズモン効果のためのp-GaN層の最適化2018
    • Author(s)
      山本賢吾、ハン ドンピョ、石本聖治、真野稜也、上山智、竹内哲也、岩谷素顕、赤崎勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs with conducting AlInN/GaN DBRs2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Photonics West OPTO
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Study on emission wavelength control of GaInN multi-quantum-shell / GaN nanowire2018
    • Author(s)
      Nanami Goto, Kohei Sasai, Kazuyoshi Iida, Naoki Sone, Atushi Suzuki, Kyohei Nokimura, Minoru Takebayashi, Satoshi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International Conference on MOVPE-XIX
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Substrate off-angle and direction dependences on DUV-LED2018
    • Author(s)
      Hisanori Kojima, Takuma Ogasawara, Myunghee Kim, Yoshiki Saito, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Electrically-injected GaN-based VCSELs2018
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      Compound Semiconductor Week
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs: Their Progress and Prospects2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      MOC2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN系長波長面発光レーザへ向けたAlInN/GaN多層膜反射鏡2018
    • Author(s)
      平岩 恵, 村永 亘 , 赤木 孝信, 竹内 哲也, 三好 実人, 上山 智, 岩谷 素顕, 赤﨑 勇
    • Organizer
      第10 回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Substrate off-angle and direction dependences on DUV-LED characteristics2018
    • Author(s)
      Hisanori Kojima, Takuma Ogasawara, Myunghee Kim, Yoshiki Saito, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Optical simulation of GaInN-based Multi-Quantum-Shell (MQS) LED using n-GaN current diffusing layer2018
    • Author(s)
      Mizuki Terazawa, Masaki Ohya, Kazuyoshi Iida, Naoki Sone, Atsushi Suzuki, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN系面発光レーザーの開発と展望2018
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      レーザー学会学術講演会第38回年次大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Growth and characterization of GaInN/GaN multi-quantum shell (MQS) /GaN nanowire2018
    • Author(s)
      Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
    • Organizer
      World Congress on Nano Science and Technology
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN/GaN multi-quantum shells for high-performance optoelectronic devices2018
    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West OPTO
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Determination of Internal Quantum Efficiency in Light-emitting Diode under Electrical Injection: IQE Degradation Mechanism Analysis2018
    • Author(s)
      Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Ryoya Mano, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 半導体多層膜反射鏡を有するGaN系面発光レーザの高効率・高出力化2018
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      第3回パワー光源及び応用システム調査専門委員会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaNトンネル接合の低抵抗化に向けた不純物プロファイルの最適化2018
    • Author(s)
      赤塚 泰斗、不破 綾太、岩山 章、竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Blue edge-emitting laser diodes with AlInN/AlGaN multiple cladding layers2018
    • Author(s)
      Kei Arakawa, Kohei Miyoshi, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] EB excitation of UV lasers using the GaN/AlGaN MQW active layers2018
    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      EMN meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 電子線励起による GaN/AlGaN 系レーザー2018
    • Author(s)
      岩谷素顕、岩山章、竹内哲也、上山智、赤﨑勇、松本 貴裕
    • Organizer
      レーザー学会学術講演会第38回年次大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN系長波長面発光レーザへ向けたAlInN/GaN多層膜反射鏡2018
    • Author(s)
      平岩 恵，荻本 純一郎，赤塚 泰斗，村永 亘，赤木 孝信，竹内 哲也，上山 智，岩谷 素顕，赤﨑 勇
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Optimization of ITO deposition condition for surface plasmon enhanced green LED2018
    • Author(s)
      Kengo Yamamoto, Dong-Pyo Han, Seiji Ishimoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based vertical-cavity surface-emitting lasers with MOVPE-grown AlInN/GaN DBRs2018
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ICMOVPE XIX
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] A 1.8mW GaN-based VCSEL with an n-type conducting bottom DBR2018
    • Author(s)
      Wataru Muranaga, Ryota Fuwa, Takanobu Akagi, Shotaro Yoshida, Junichiro Ogimoto, Yasuto Akatsuka, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Influence of trap level on Al0.6Ga0.4N/Al0.5Ga0.5N-MSM UV photodetector2018
    • Author(s)
      Akira Yoshikawa, Saki Ushida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Modification of underlying layers to improve quantum efficiency in green light emitting diodes2018
    • Author(s)
      Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 下地GaN/GaInN超格子による緑色LEDの発光特性の変化2018
    • Author(s)
      石本聖治、Han Dong-Pyo、山本賢吾、上山智、竹内哲也、岩谷素顕、赤﨑 勇
    • Organizer
      第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based vertical-cavity surface-emitting lasers with MOVPE-grown AlInN/GaN DBRs2018
    • Author(s)
      Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International Conference on MOVPE-XIX
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Fabrication of GaN-based multi-quantum shell LED2018
    • Author(s)
      Kyohei Nokimura, Naoki Sone, Atsushi Suzuki, Kazuyoshi Iida, Minoru Takebayashi, Satoshi Kamiyama,, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      International workshop on nitride semiconductors
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaInN VCSELs with AlInN/GaN DBRs2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ICNS’ 12th International Conference on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] 高効率GaN面発光レーザの現状と展望2017
    • Author(s)
      竹内哲也・上山　智・岩谷素顕・赤﨑　勇
    • Organizer
      電子情報通信学会　総合大会
    • Place of Presentation
      名城大学
    • Year and Date
      2017-03-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Modified Shockley diode equation suitable for InGaN-based light-emitting diodes2017
    • Author(s)
      Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN/GaN tunnel junctions grown by MOVPE2017
    • Author(s)
      R.Fuwa, D. Takasuka, Y. Akatsuka, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      LEDIA`17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] X線マイクロビームを用いた窒化物系単一ナノワイヤ上Ga1-xInxN/GaN量子井戸の構造評価2017
    • Author(s)
      清木 良麻、澁谷 弘樹、今井 康彦、隅谷 和嗣、木村 滋、岩瀬 航平、宮嶋 孝夫、上山 智、今井 大地、竹内 哲也、岩谷 素顕、赤崎 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSELs towards high efficiency2017
    • Author(s)
      T. Takeuchi
    • Organizer
      LDC18
    • Place of Presentation
      Yokohasma, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Nitride-based nanowire and multi-quantum shell active layer for advanced photonic devices2017
    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 3rd Congress on Materials Science and Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Semipolar (10-1-1) GaInN/GaN p-i-n lightemitting2017
    • Author(s)
      N. Muramatsu, T. Takanishi, S. Mitsufuji, M. Iwaya, T. Takeuchi, S.Kamiyama, and I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 高効率GaN面発光レーザの現状と展望2017
    • Author(s)
      T. Takeuchi
    • Organizer
      電子通信情報学会大会
    • Place of Presentation
      名古屋
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] トンネル接合を用いた低温成長 p 側構造黄色 LED の作製2017
    • Author(s)
      吉永純也,市川達弥,鈴木健太,小出典克,竹内哲也,岩谷素顕,上山智,赤﨑勇
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN-based VCSELs with AlInN/GaN DBRs2017
    • Author(s)
      Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      SPIE Photonics west
    • Place of Presentation
      San Fransisco
    • Year and Date
      2017-01-29
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Nitride-based nanowire and multi-quantum shell active layer for advanced photonic devices2017
    • Author(s)
      S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 3rd Congress on Materials Science and Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaNナノワイヤ結晶の限定領域形成に関する基礎検討2017
    • Author(s)
      竹林穣、栗崎勇気、澁谷弘樹、M. Kim、上山智、竹内 哲也、岩谷素顕、赤﨑勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs towards high efficiency2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      OPIC 2017 LDC’17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] High-performance GaN-based VCSELs2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      2017 IEEE Photonics Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 高効率窒化物半導体発光素子に向けた新展開2017
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      ワイドギャップ半導体光・電子デバイス第162委員会　第104回合同研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017
    • Author(s)
      N. Hayashi, K. Matsui, T. Furuta, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ISPlasma 2017
    • Place of Presentation
      Chubu University, Japan
    • Year and Date
      2017-02-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
    • Author(s)
      安田俊輝、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] （優秀論文賞受賞記念講演） Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors2017
    • Author(s)
      池山 和希、小塚 祐吾、松井 健城、吉田 翔太朗、赤木 孝信、赤塚 泰斗、小出 典克、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Structural analysis of GaInN/GaN multiquantum wells grown on a GaN {1-100} sidewall of nanowire by using an x-ray micro beam2017
    • Author(s)
      R. Seiki, H. Shibuya, Y. Imai, K.Sumitani, S. Kimura, K. Iwase, T. Miyajima, S. Kamiyama, D. Imai, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] r面サファイア基板上スパッタリング成膜AlNバッファ層の結晶品質と熱処理効果2017
    • Author(s)
      大槻 隼也、神野 大樹、大長 久芳、上山 智、竹内 哲也、岩谷 素顕、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Modified Shockley diode equation suitable for InGaN-based light-emitting diodes2017
    • Author(s)
      D.-P. Han, J.-I. Shim, D.-S. Shin, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Fabrication of GaInN/GaInP/GaAs/Ge 4-junction solar cell using wafer bonding technology2017
    • Author(s)
      Kazuya Takahashi Ryoji Shinoda Syun Mitsufuji Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Tomokazu Hattori Isamu Akasaki, Hiroshi Amano
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaInN vertical-cavity surface-emitting lasers with AlInN/GaN DBRs2017
    • Author(s)
      Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 12th international conference on nitride semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] AlN系窒化物半導体のウェハ接合技術の検討2017
    • Author(s)
      高橋 一矢、篠田 涼二、岩谷 素顕、竹内 哲也、上山 智、服部 友一、赤崎 勇、片山 竜二、上向井 正裕
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Study on growth condition of 3D nanowire/GaInN-based multi-quantum shell active layer2017
    • Author(s)
      K. Nokimura, M. H. Kim, A. suzuki, Y. Kurisaki, M. Takebayashi, H. Shibuya, K. Sasai. S. Kamiyama, T. Takeuchi, M. Iwaya, and I. Akasaki
    • Organizer
      Materials Research Society Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Low resistive GaN tunnel junctions grown by MOVPE2017
    • Author(s)
      R.Fuwa, Y. Akatsuka, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      2017 MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaNナノワイヤ結晶の限定領域形成に関する基礎検討2017
    • Author(s)
      林 菜摘、松井 健城、古田 貴士、赤木 孝信、竹内 哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 名城大学におけるGaInN系面発光レーザの現状とその展望2017
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      光電相互変換第125委員会　第236回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN/GaN tunnel junctions grown by MOVPE2017
    • Author(s)
      Ryota Fuwa, Daiki Takasuka, Yasuto Akatsuka, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      LEDIA'17
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
    • Author(s)
      林 菜摘，松井 健城，古田 貴士，赤木 孝信，竹内 哲也，上山 智，岩谷 素顕，赤﨑 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] r面サファイア基板上スパッタリング成膜AlNバッファ層の結晶品質と熱処理効果2017
    • Author(s)
      大槻隼也, 神野大樹, 大長久芳, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Demonstration of AlGaN/GaN UV lasers by electron beam pumping2017
    • Author(s)
      Motoaki Iwaya,　Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2017-03-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] High-performanceGaN-based VCSELs2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      2017 IEEE Photonics Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaN-based VCSELs towards high efficiency2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Laser Disply Conference 2017
    • Place of Presentation
      Yokohama
    • Year and Date
      2017-04-18
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Structure of porous SiC by voltage controlled anodic oxidation method2017
    • Author(s)
      H. Kurokawa, S. Kamiyama, I. Akasaki, T. Takeuchi, M. Iwaya, Y. Iwasa
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Alternative hole injections in nitride-based light-emitting devices2017
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      2017 MRS Fall Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] アニール処理したスパッタ AlN膜上に形成したAlGaNの特性2017
    • Author(s)
      袴田 淳哉、川瀬 雄太、岩山 章、岩谷 素顕、上山 智、竹内 哲也、赤﨑 勇、三宅 秀人
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaInN/GaN Multi-Quantum-Shell (MQS) on GaN Nanowire for 3D Light-Emitting Diode2017
    • Author(s)
      M. H. Kim, K. Nokimura, S. Kamiyama, T. Takeuchi, M. Iwaya, and I. Akasaki
    • Organizer
      European Materials Research Society Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
    • Author(s)
      安田 俊輝、桑原 奈津子、竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇、天野 浩
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] MOVPE法による低抵抗GaNトンネル接合2017
    • Author(s)
      不破綾太、赤塚泰人、竹内哲也、岩谷素顕、上山智、赤崎勇
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaNナノワイヤを用いた高出力LED作製に向けた検討2017
    • Author(s)
      軒村 恭平、栗崎 湧気、上山 智、竹内 哲也、岩谷 素顕、赤崎 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Nitride-based tunnel junctionsby MOCVD2017
    • Author(s)
      T. Takeuchi
    • Organizer
      DOE SSL R&D workshop
    • Place of Presentation
      Long Beach, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Feasibility study on limited area formation of GaN nanowires for multi-quantum shell LDs2017
    • Author(s)
      Minoru Takebayashi, Yuki Kurisaki, Hiroki Shibuya, Myunghee Kim, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 面発光レーザへの応用に向けた窒化物半導体埋め込みトンネル接合2017
    • Author(s)
      赤塚 泰斗、不破 綾太、岩山 章、竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] AlGaN系紫外レーザの現状と期待2017
    • Author(s)
      岩谷　素顕, Ling Dong , 岩山　章 ，川瀬雄太 ，竹内　哲也, 上山　智, 赤﨑　勇，三宅秀人
    • Organizer
      第46回日本結晶成長学会国内会議
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Feasibility study on limited area formation of GaN nanowires for multi-quantum shell LDs2017
    • Author(s)
      M. Takebayashi, Y. Kurisaki, H. Shibuya, M. Kim, S. Kamiyama, T. Takeuchi, M. Iwaya, Isamu Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN/GaN tunnel junctions grown by MOVPE2017
    • Author(s)
      R. Fuwa, D. Takasuka, Y. Akatsuka, T. Takeuchi, M. Iwaya, S. Kamiyama,and I. Akasaki
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution2017
    • Author(s)
      Y. Iwasa, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
    • Organizer
      SPIE NanoPhotonics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Demonstration of AlGaN/GaN-based UV lasers excited by electron beam2017
    • Author(s)
      Motoaki Iwaya,　Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      SPIE Photonics west
    • Place of Presentation
      San Fransisco, USA
    • Year and Date
      2017-01-29
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] X 線マイクロビームを用いた 窒化物系単一ナノワイヤ上 Ga1-xInxN/GaN 量子井戸の構造評価2017
    • Author(s)
      清木良麻，澁谷弘樹，今井康彦，隅谷和嗣，木村滋，岩瀬航平， 宮嶋孝夫，上山智，今井大地，竹内哲也，岩谷素顕，赤崎 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 高効率窒化物半導体発光素子に向けた新展開2017
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      ワイドギャップ半導体光・電子デバイス第162委員会　第104回合同研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017
    • Author(s)
      N. Hayashi, K. Matsui, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs towards high efficiency2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      OPIC 2017 LDC’17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Low-temperature embedded growth over III-nitride nanowires2017
    • Author(s)
      H. Shibuya, Y. Kurisaki,S. Kamiyama, M. Iwaya, T. Takeuchi and I. Akasaki
    • Organizer
      ISPlasma 2017
    • Place of Presentation
      Nagoya
    • Year and Date
      2017-03-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs Towards High Efficiency2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Demonstration of electron beam pumped GaN-based laser2017
    • Author(s)
      T. Hayashi, N. Nagata, T. Senga, S. Iwayama, M. Iwaya, T.Takeuchi, S.Kamiyama, I. Akasaki, and T. Matsumoto
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Fabrication and characterization of AlGaN templates on annealed sputtering AlN layer2017
    • Author(s)
      J. Hakamata, Y. Kawase, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Electron beam excitation of ultraviolet laser using a GaN/AlGaN multi quantum well active layer2017
    • Author(s)
      Takafumi Hayashi, Lin Dong, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      The 8th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
    • Author(s)
      林 菜摘、松井 健城、古田 貴士、赤木 孝信、竹内 哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 蛍光SiCの発光特性評価2017
    • Author(s)
      上山智、竹内哲也、岩谷素顕、赤﨑勇
    • Organizer
      第370回蛍光体同学会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Alternative hole injections in nitride-based light-emitting devices2017
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      2017 MRS Fall Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017
    • Author(s)
      N. Hayashi, K. Matsui, T. Furuta, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ISPlasma 2017
    • Place of Presentation
      Nagoya, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017
    • Author(s)
      N. Hayashi, K. Matsui, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      ICNS-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] AlN epitaxial growth with Ga supply on off-cut sapphire substrate2017
    • Author(s)
      Takuma Ogasawara, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      LEDIA'17
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaInN vertical-cavity surface-emitting lasers with AlInN/GaN DBRs2017
    • Author(s)
      T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 電子線励起法によるGaN/AlGaN-MQW レーザ2017
    • Author(s)
      林 貴文、永田 訓章、千賀 崇史、岩山 章、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
    • Author(s)
      林 菜摘，松井 健城，古田 貴士，赤木 孝信，竹内 哲也，上山 智，岩谷 素顕，赤﨑 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] GaN-based VCSELs with lateral optical confinement structures2017
    • Author(s)
      N. Hayashi , K. Matsui , T. Takeuchi , S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 窒化物半導体における新しい導電性制御：トンネル接合と分極ドーピング2017
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤﨑　勇
    • Organizer
      第36回電子材料シンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Acceleration Voltage Dependence of Threshold Power Density in AlGaN/GaN Based Electron2017
    • Author(s)
      Motoaki Iwaya, Takafumi Hayash, Noriaki Nagata,Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
    • Organizer
      11th International Symposium on
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 名城大学におけるGaInN系面発光レーザの現状とその展望2017
    • Author(s)
      竹内哲也、上山　智、岩谷素顕、赤﨑　勇
    • Organizer
      光電相互変換第125委員会　第236回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] Optical characteristics of plasmonic LEDs with and without dielectic films2017
    • Author(s)
      S. Matsuo, J. Ohsumi, K. Niwa, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
    • Organizer
      SPIE Photonics West 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Realization of electron beam excitation of UV laser using a AlGaN/GaN multi quantum well active layer2017
    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      European Material Research Scociety Symposium Fall meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] High electron concentrations in MOCVD-grown Si-doped dilute AlxGa1-xN on sapphire2017
    • Author(s)
      B. Monemar, P. P. Paskov, J. P. Bergman, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
    • Author(s)
      安田俊輝、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Low-temperature-grown p-side structure with tunnel junction towards long wavelength nitride-based LED2017
    • Author(s)
      J. Yoshinaga, K. Suzuki, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
    • Organizer
      LEDIA’17
    • Place of Presentation
      Yokohama, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] GaN-based VCSELswith AlInN/GaN DBRs2017
    • Author(s)
      T. Takeuchi
    • Organizer
      SPIE OPTO
    • Place of Presentation
      San Francisco, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaNナノワイヤを用いた高出力LED作製に向けた検討2017
    • Author(s)
      軒村恭平, 栗崎湧気, 上山智, 竹内哲也, 岩谷素顕, 赤崎 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Fabrication of high-quality AlN template by high-temperature annealing for deepultraviolet2017
    • Author(s)
      Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
    • Organizer
      International Workshop on UV Materials and Devices 2017
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 窒化物半導体における新しい導電性制御：　トンネル接合と分極ドーピング2017
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤﨑　勇
    • Organizer
      第36回電子材料シンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01055

  • [Presentation] GaInN トンネル接合と n 型 GaNSb による低温 p 側構造の作製2016
    • Author(s)
      鈴木 健太、財部 覚、高須賀 大貴、小出 典克、 竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] 高速成長（0.43 μm/h）させたGaInN量子井戸の弱・強励起PL評価2016
    • Author(s)
      市川 竜弥、高須賀 大貴、財部 覚、竹内 哲也、上山 智、岩谷素顕、赤﨑 勇
    • Organizer
      第5回 結晶工学未来塾
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] GaInN トンネル接合と n 型 GaNSb による低温 p 側構造の作製2016
    • Author(s)
      鈴木 健太、財部 覚、高須賀 大貴、小出 典克、 竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Observation of AlGaN/GaN heterostructure by in situ XRD attached metalorganic vapor phase epitaxial equipment2016
    • Author(s)
      J. Osumi, R. Kanayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki,
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Polarization induced hole accumulations in nitride semiconductor heterostructures2016
    • Author(s)
      T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      LEDIA’16
    • Place of Presentation
      Yokohama, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] ITO/Ga2O3 multilayer electrodes towards deep UV-LEDs2016
    • Author(s)
      N. Kuwabara, T. Yasuda, S. Katsuno, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      LEDIA’16
    • Place of Presentation
      Yokohama, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Determination of the Site of Sb Occupation in MOCVD-Grown GaN1xSbx Using X-Ray Absorption Fine-Structure Measurements2016
    • Author(s)
      Takao Miyajima, Daisuke Komori, Toshiaki Ina, Ryoma Seiki, Kiyofumi Nitta, Tetsuya Takeuchi, Tomoya Uruga, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaInNトンネル接合とn型GaNSbによる低温p側構造の作製2016
    • Author(s)
      鈴木 健太, 財部 覚, 小森 大資, 高須賀 大貴, 小出 典克、竹内 哲也, 岩谷 素顕, 上山 智,赤﨑 勇
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] アニール処理AlN下地層上AlGaN/AlN-MQWの光学特性2016
    • Author(s)
      袴田 淳哉、草深 敏匡、千賀 崇史、岩谷 素顕、竹内 哲也、上山 智、三宅 秀人、赤崎 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] X線吸収微細構造測定によるAl0.82In0.18Nの局所構造解析2016
    • Author(s)
      清木 良麻、小森 大資、池山 和希、伊奈 稔哲、小沼 猛儀、宮嶋 孝夫、竹内 哲也、上山 智、岩谷 素顕、赤崎 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 3-mW RT-CW GaN-Based VCSELs and Their Temperature Dependence2016
    • Author(s)
      Kenjo Matsui, Takashi Furuta, Natsumi Hayashi, Yugo Kozuka, Takanobu Akagi, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] High Temperature Annealing of Sputtered AlN Buffer Layer on r-Plane Sapphire Substrate and its Effect on Crystalline Quality of a-Plane GaN2016
    • Author(s)
      Daiki Jinno, Shun Otsuki, Teruyuki Niimi, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 低温下におけるⅢ族窒化物ナノワイヤの埋め込み成長に関する研究2016
    • Author(s)
      澁谷 弘樹、上山 智、岩谷 素顕、竹内 哲也、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] アニール処理AlN下地層上AlGaN/AlN-MQWの光学特性2016
    • Author(s)
      袴田 淳哉、草深 敏匡、千賀 崇史、岩谷 素顕、竹内 哲也、上山 智、三宅 秀人、赤崎 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-23
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Low Temperature Photoluminescence in Highly Si-Doped AlxGa1-xN with x < 0.092016
    • Author(s)
      Bo Monemar, Plamen P. Paskov, K. Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Low-temperature grown p-side structure with GaInN tunnel junction and n-GaNSb2016
    • Author(s)
      K. Suzuki, K. Takarabe, D. Komori, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
    • Organizer
      LEDIA'16
    • Place of Presentation
      Yokphama, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] 3-mW RT-CW GaN-based VCSELs and their temperature dependence2016
    • Author(s)
      K. Matsui, T. Furuta, N. Hayashi, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      International Workshop on Nitride semiconductors 2016
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] サファイア基板上AlNエピタキシャル層へのGa添加の効果2016
    • Author(s)
      小笠原多久満、安田俊輝、竹内哲也、岩谷素顕、上山智、赤﨑勇
    • Organizer
      2016結晶工学未来塾
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Characterization of AlGaN/GaN Heterostructure by In Situ X-Ray Diffraction Attached Metal Organic Vapor Phase Epitaxy2016
    • Author(s)
      Ryousuke Kanayama, Junya Osumi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Local Structural Analysis around In Atoms in Al0.82In0.18N alloy by Using X-Ray Absorption Fine-Structure Measurements2016
    • Author(s)
      Ryoma Seiki, Daisuke Komori, Kazuki Ikeyama, Toshiaki Ina, Takeyoshi Onuma, Takao Miyajima, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Theoretical Investigation of Nitride Nanowire-Based QuantumShell Lasers2016
    • Author(s)
      Yuki Kurisaki, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Si3N4による高AlNモル分率n-AlGaN用V系電極の低接触比抵抗化2016
    • Author(s)
      永田 訓章、森 一喜、武田 邦宏、草深 敏匡、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] AlGaN多重量子井戸構造のレーザ発振特性のSi濃度依存性2016
    • Author(s)
      千賀 崇史、永田 訓章、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] ITO/Ga2O3 Multilayer Electrodes Towards Deep UV-LEDs2016
    • Author(s)
      N. Kuwabara, T. Yasuda, S. Katsuno, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki,
    • Organizer
      The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2016-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSELs using Periodic Gain Structures2016
    • Author(s)
      K. Matsui, K. Ikeyama, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2016-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Physical Property of the High Photosensitive Field Effect Transistor Type UV Photosensors with AlGaN/AlGaN Hetero Structure2016
    • Author(s)
      Akira Yoshikawa, Saki Ushida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] AlGaN多重量子井戸構造のレーザ発振特性のSi濃度依存性2016
    • Author(s)
      千賀 崇史、永田 訓章、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Room temperature CW operation of GaN-based VCSELs2016
    • Author(s)
      K. Matsui, T. Furuta, N. Hayashi, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      IEEE 2016 Lester Eastman Conference
    • Place of Presentation
      Bethlehem, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Low Resistivity Ohmic Contact V-Based Electrode Contributed by Using Thin SiNx Intermediate Layer for High AlN Molar Fraction n-Type AlGaN2016
    • Author(s)
      Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Temperature Dependence in AlGaN-Based Heterostructure Field-Effect Transistor Type UV Photosensors2016
    • Author(s)
      Saki Ushida, Akira Yoshikawa, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Design and Fabrication of Modulation-Doped GaN-Based Vertical Cavities for Blue Surface-Emitting Lasers&nbsp;2016
    • Author(s)
      J. Ogimoto, Y. Kozuka, T. Akagi, N. Hayashi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      International Workshop on Nitride semiconductors 2016
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Polarization Induced Hole Accumulations in Nitride Semiconductor Heterostructures2016
    • Author(s)
      T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2016-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSELs using Periodic Gain Structures2016
    • Author(s)
      K. Matsui , K. Ikeyama , T. Furuta , Y. Kozuka , T. Akagi , T. Takeuchi , S. Kamiyama , M. Iwaya , and I. Akasaki
    • Organizer
      LEDIA’16
    • Place of Presentation
      Yokohama, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] X線その場観察MOVPEによるAlGaN/GaNヘテロ構造評価2016
    • Author(s)
      金山 亮介、大角 純也、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Polarization induced holes for ultraviolet emitting devices2016
    • Author(s)
      T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      IEEE 2016 Lester Eastman Conference
    • Place of Presentation
      Bethlehem, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 分極電荷による高ホール濃度を有するp型AlGaNの作製2016
    • Author(s)
      安田 俊輝、竹内 哲也、岩谷 素顕、上山 智、赤﨑 勇、天野 浩
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs2016
    • Author(s)
      T. Furuta, K. Matsui, Y. Kozuka, S. Yoshida, N. Hayasi, T. Akagi, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      The 25th International Semiconductor Laser Conference (ISLC2016)
    • Place of Presentation
      Kobe, Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] XAFS法を用いたGaN1-xSbx混晶半導体中のSb占有位置評価2016
    • Author(s)
      宮嶋 孝夫、小森 大資、清木 良麻、伊奈 稔哲、新田 清文、鈴木 健太、竹内 哲也、宇留賀 朋哉、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Group-III nitride-based nanostructures for novel optoelectronic devices2016
    • Author(s)
      S. Kamiyama, M. Iwaya, T. Takeuchi, I Akasaki
    • Organizer
      Nano Science & Technology 2016
    • Place of Presentation
      Singapore
    • Year and Date
      2016-10-26
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] 窒化物系ナノワイヤーおよび量子殻構造の作製と、光デバイス応用2016
    • Author(s)
      上山 智、竹内 哲也、岩谷 素顕、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSEL using a periodic gain structure consisting of two GaInN 5QWs2016
    • Author(s)
      K. Matsui, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya and I. Akasaki
    • Organizer
      第35回電子材料シンポジウム
    • Place of Presentation
      滋賀
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Nitride-based tunnel junctions with graded GaInN layers2016
    • Author(s)
      D. Takasuka, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
    • Organizer
      ISPlasma/IC-PLANTS 2016
    • Place of Presentation
      Nagoya
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] High hole accumulation and low p-contact resistande with graded-AlGaN layers2016
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2016-03-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] High hole accumulation and low p-contact resistande with graded-AlGaN layers2016
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2016-03-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 電子線励起法によるGaInN/GaN-MQW レーザ2016
    • Author(s)
      林 貴文、永田 訓章、千賀 崇史、金山 亮介、岩山 章、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] MOVPE-grown GaN-based vertical cavity surface emitting lasers2016
    • Author(s)
      K. Matsui, T. Furuta, N. Hayashi, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      EMN Meeting on Epitaxy
    • Place of Presentation
      Budapest, Hungary
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Nano-size concavo-convex (NCC)サファイア基板を用いた高品質 AlN 膜成長2016
    • Author(s)
      吉川 陽、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Temperature Dependence of the Nitride-based HFET Structure Photosensors2016
    • Author(s)
      S. Ushida, A. Yoshikawa, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2016-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 窒化物半導体 HFET 型光センサの動作に関する温度依存性2016
    • Author(s)
      牛田 彩希、吉川 陽、岩谷 素顕、上山 智、竹内 哲也、赤﨑 勇
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Low resistiveGaInN tunneljunctionswith high Si concentrations2016
    • Author(s)
      Y. Akatsuka, D. Takasuka, M. Ino, T. Akagi, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasak
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 深紫外LEDのためのITO/Ga203 多層膜透明電極の検討2016
    • Author(s)
      桑原 奈津子, 安田 俊輝, 勝野翔太, 小出 典克, 竹内 哲也, 岩谷 素顕, 上山 智, 赤﨑 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 高温アニール処理のスパッタ AlN 層における効果2016
    • Author(s)
      袴田 淳哉、岩谷 素顕、上山 智、竹内 哲也、三宅 秀人、赤﨑 勇
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Growth and characterization of GaInN/GaN multi-quantum shell active layer for novel optoelectronic devices2016
    • Author(s)
      S. Kamiyama, M. Iwaya, T. Takeuchi, I Akasaki
    • Organizer
      Collaborative Conference on Crystal Growth
    • Place of Presentation
      San Sebastian, Spain
    • Year and Date
      2016-09-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06416

  • [Presentation] Hole accumulation to polarization charges in relaxed AlGaN heterostructures with high AlN mole fractions2016
    • Author(s)
      T. Yasuda, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      International Workshop on Nitride semiconductors 2016
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Low-Temperature Grown p-Side Structure with GaInN Tunnel Junction and n-GaNSb2016
    • Author(s)
      281.K. Suzuki, K. Takarabe, D. Komori, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2016-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Si3N4による高AlNモル分率n-AlGaN用V系電極の低接触比抵抗化2016
    • Author(s)
      永田 訓章、森 一喜、武田 邦宏、草深 敏匤、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-23
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Improvement of p-type electrical property by polarization-doping in graded-AlGaN layer2016
    • Author(s)
      安田俊輝、勝野翔太、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
    • Organizer
      第35回電子材料シンポジウム
    • Place of Presentation
      滋賀
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Improvement of p-type electrical property by polarization-doping in graded-AlGaN layer2016
    • Author(s)
      Y. . Yasuda, S. Katsuno, N. Kuwabara, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
    • Organizer
      35th Electronic Materilas Symposium
    • Place of Presentation
      Moriyama, Japan
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] AlGaN系HFET型光センサのSiNxパッシベーション効果2016
    • Author(s)
      牛田 彩希、吉川 陽、岩谷 素顕、竹内 哲也、上山 智、赤﨑 勇
    • Organizer
      第７７回応用物理学会秋季講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaN-based VCSEL using a periodic gain structure consisting of two GaInN 5QWs2016
    • Author(s)
      K. Matsui, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya and I. Akasaki
    • Organizer
      35th Electronic Materilas Symposium
    • Place of Presentation
      Moriyama, Japan
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] GaInN-based tunnel junctionsfor novel optoelectronic devices2016
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      EMN Meeting on Photovoltaics
    • Place of Presentation
      HongKong
    • Year and Date
      2016-01-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Hole Accumulations to Polarization Charges in Relaxed AlGaN Heterostructures with High AlN Mole Fractions2016
    • Author(s)
      Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Buried Tunnel Junctions Using Low Resistive GaInN Tunnel Junctions with High Si Concentrations2016
    • Author(s)
      Yasuto Akatsuka, Daiki Takasuka, Takanobu Akagi, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama and Isamu Akasaki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Si concentration dependence of laser oscillation characteristics in AlGaN multiple quantum well active layer2016
    • Author(s)
      T. Senga, N. Nagata, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Buried tunnel junctions using low resistive GaInN tunnel junctions with high Si concentrations2016
    • Author(s)
      Y. Akatsuka, D. Takasuka, T. Akagi, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      International Workshop on Nitride semiconductors 2016
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaNSb alloys grown under H2carrier gases2015
    • Author(s)
      Daisuke Komori, Kaku Takarabe, Kenta Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] サファイア上AlN テンプレートの表面平坦性の検討2015
    • Author(s)
      勝野 翔太, 萩原 康大, 安田 俊輝, 小出 典克,岩谷 素顕, 竹内 哲也, 上山 智, 赤﨑 勇, 天野浩
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
    • Author(s)
      S. Katsuno, T. Yasuda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Carrier Gas Dependence on GaNSb MOVPE Growth2015
    • Author(s)
      D. Komori, H. Sasajima, K. Takarabe, K. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Correlation between crystal qualities and electrical properties in Si-doped AlGaN2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-05-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 青色LEDの基板技術と次世代発光素子の将来展望2015
    • Author(s)
      竹内哲也
    • Organizer
      コロイドマテリアル応用研究会　第5回研究会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-06-24
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaNSb におけるGaSb モル分率のキャリアガス依存性2015
    • Author(s)
      小森 大資, 財部 覚, 鈴木 健太, 竹内 哲也, 上山 智, 岩谷 素顕, 宮嶋 孝夫, 小出 典克,赤﨑 勇
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 青色LEDの基盤技術と次世代光源の展望2015
    • Author(s)
      竹内哲也
    • Organizer
      日本騒音制御工学会　定時総会特別講演会
    • Place of Presentation
      東京
    • Year and Date
      2015-05-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Epitaxial Growth of AlN Templates with Smooth Surfaces on Sapphire2015
    • Author(s)
      S. Katsuno, K. Hagiwara, T. Yasuda, N. Koide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      2015 Material Research Society Fall Meeting
    • Place of Presentation
      Boston/USA
    • Year and Date
      2015-12-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Status and Prospects of GaN-Based Vertical Cavity Surface Emitting Lasers (VCSELs)2015
    • Author(s)
      T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki:
    • Organizer
      International Symposium on Optical Memory
    • Place of Presentation
      Fukui, Japan
    • Year and Date
      2015-10-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Electrical properties of extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction2015
    • Author(s)
      Kunihiro Takeda, Kazuki Mori, Toshiki Kusafuka,Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul/Korea
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul/Korea
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Correlation between Crystal Qualities and Electrical Properties in Si-Doped Al0.6Ga0.4N2015
    • Author(s)
      T. Yasuda, S. Katsuno, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Carrier Gas Dependence on GaNSb MOVPE Growth2015
    • Author(s)
      D. Komori, H. Sasajima, K. Takarabe, K. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yoohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] Nitride-Based Tunnel Junctions towards DeepUV-LEDs2015
    • Author(s)
      D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-05-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Electrical Properties of High Carrier Concentration n-Type AlGaN2015
    • Author(s)
      K. Takeda, K. Mori, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications' 15
    • Place of Presentation
      Yokohama/japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 高Al組成のn-AlGaNにおけるV系電極のコンタクト特性2015
    • Author(s)
      森一喜、武田邦宏、草深敏匡、岩谷素顕、上山智、竹内哲也、赤崎勇、天野浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県平塚市
    • Year and Date
      2015-03-13
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] サファイア上AlNテンプレートの表面平坦性の検討2015
    • Author(s)
      勝野 翔太, 萩原 康大, 安田 俊輝, 小出 典克, 岩谷 素顕, 竹内哲也, 上山 智, 赤﨑 勇, 天野浩
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋/日本
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
    • Author(s)
      S. Katsuno, T. Yasuda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Low Ohmic contact resistance to high AlN molar fraction n-type AlGaN by V-based electrode2015
    • Author(s)
      Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu/Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 青色LEDの発明と新規発光デバイスへの展開2015
    • Author(s)
      竹内哲也
    • Organizer
      IEEE MIT-S Kansai Chapter窒化物半導体デバイスとマイクロ波ワークショップ
    • Place of Presentation
      京都
    • Year and Date
      2015-10-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] GaNSb におけるGaSb モル分率のキャリアガス依存性2015
    • Author(s)
      小森 大資, 財部 覚, 鈴木 健太, 竹内 哲也, 上山 智, 岩谷 素顕, 宮嶋 孝夫, 小出 典克,赤﨑 勇
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] Electrical characteristics of externally high Si-doped AlGaN with low AlN molar fraction2015
    • Author(s)
      Kunihiro Takeda, Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu/Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
    • Author(s)
      D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED2015
    • Author(s)
      M. Iwaya, D. Iida, K. Takeda, T. Sugiyama, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      11th international coference of nitride semiconductor
    • Place of Presentation
      Beijing/China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Contact Characteristics of V-Based Electrode for High AlN Molar Fraction n-AlGaN2015
    • Author(s)
      K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
    • Place of Presentation
      Yokohama/japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Epitaxial Growth of AlN Templates with Smooth Surfaces on Sapphire2015
    • Author(s)
      Syouta Katsuno, Koudai Hagiwara, Toshiki Yasuda, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      MRS fall meeting 2015
    • Place of Presentation
      Boston, USA
    • Year and Date
      2015-11-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 高キャリア濃度n型AlGaNの電気的特性2015
    • Author(s)
      武田邦宏、森一喜、山田知明、岩谷素顕、竹内哲也、上山智、赤﨑勇
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県平塚市
    • Year and Date
      2015-03-13
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 青色LEDの発明と固体照明への将来展望2015
    • Author(s)
      竹内哲也
    • Organizer
      日本セラミックス協会関東支部講演会
    • Place of Presentation
      東京
    • Year and Date
      2015-04-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 深紫外LEDに向けた窒化物半導体トンネル接合の検討2015
    • Author(s)
      髙須賀 大貴,南川大智,井野匡貴,竹内哲也,岩谷 素顕,上山 智,天野 浩,赤﨑 勇
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Nitride-Based Buried Tunnel Junctions for Current Confinement in Blue VCSEL2015
    • Author(s)
      Masataka Ino, Daiki Takasuka, Kohei Iwase, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Norikatsu Koide, Isamu Akasaki
    • Organizer
      MRS fall meeting 2015
    • Place of Presentation
      Boston, USA
    • Year and Date
      2015-11-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED2015
    • Author(s)
      M. Iwaya, D. Iida, K. Takeda, T. Sugiyama, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      11th international coference of nitride semiconductors
    • Place of Presentation
      Beijing/China
    • Year and Date
      2015-08-30
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
    • Author(s)
      D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications' 15
    • Place of Presentation
      Yokohama/japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] AlGaN-based UV-LEDs with polarization engineering2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      14th Akasaki Research Center Symposium
    • Place of Presentation
      Nagoya/japan
    • Year and Date
      2015-11-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] AlGaN-based UV-LEDs with polarization engineering2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      14th Akasaki Research Center Symposium
    • Place of Presentation
      Nagoya/Japan
    • Year and Date
      2015-11-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] MOVPE Growth of AlNSb Alloys2015
    • Author(s)
      K. Suzuki, D. Komori, H. Sasajima, K. Takarabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13959

  • [Presentation] GaInN系面発光レーザの室温パルス発振と今後の展望2015
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤崎　勇
    • Organizer
      産業用LED応用研究会＆JPC紫外線研究会
    • Place of Presentation
      東京
    • Year and Date
      2015-06-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] AlInN多層膜反射鏡を有する窒化物半導体面発光レーザのパルス発振2015
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤崎　勇
    • Organizer
      第76回応用物理学会秋季学術講演会シンポジウム
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] バナジウム系電極による高AlNモル分率n型AlGaNのとの低接触比抵抗の検討2015
    • Author(s)
      森 一喜、草深 敏匡、岩谷 素顕、竹内 哲也、上山 智、赤崎勇、天野 浩
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋/日本
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Electron and hole accumulations to polarization charges at GaN/AlInN/GaN interfaces2015
    • Author(s)
      Shotaro Yoshida, Kazuki Ikeyama, Toshiki Yasuda, Takashi Furuta, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki,
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 窒化物半導体面発光レーザの現状と照明応用に向けた将来展望2015
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤崎　勇
    • Organizer
      第48回照明学会全国大会　固体光源分科会シンポジウム
    • Place of Presentation
      福井
    • Year and Date
      2015-08-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
    • Author(s)
      S. Katsuno, T. Yasude, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Contact Characteristics of V-Based Electrode for High AlN Molar Fraction n-AlGaN2015
    • Author(s)
      K. Mori, K. Takeda, T. Kusafuka,M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-05-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Correlation between crystal qualities and electrical properties in Si-doped AlGaN2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
    • Place of Presentation
      Yokohama/japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 青色LEDの発明と固体照明への将来展望2015
    • Author(s)
      竹内哲也
    • Organizer
      日本セラミック協会　関東支部講演会
    • Place of Presentation
      東京
    • Year and Date
      2015-04-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Electrical Properties of High Carrier Concentration n-Type AlGaN2015
    • Author(s)
      K. Takeda, K. Mori, T. Kusafuka,M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
    • Place of Presentation
      Yokohama/Japan
    • Year and Date
      2015-05-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] Electrical characteristics of externally high Si-doped AlGaN with low AlN molar fraction2015
    • Author(s)
      Kunihiro Takeda, Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu/Japan
    • Year and Date
      2015-11-09
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
    • Author(s)
      S. Katsuno, T. Yasude, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
    • Place of Presentation
      Yokohama/japan
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] MOVPE Growth of AlNSb Alloys2015
    • Author(s)
      K. Suzuki, D. Komori, H. Sasajima, K. Takarabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Low Ohmic contact resistance to high AlN molar fraction n-type AlGaN by V-based electrode2015
    • Author(s)
      Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu/Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02019

  • [Presentation] 深紫外LEDに向けた窒化物半導体トンネル接合の検討2015
    • Author(s)
      高須賀大貴, 南川大智, 井野匡貴, 竹内哲也, 岩谷素顕, 上山智, 天野浩, 赤﨑勇
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県平塚市
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content2015
    • Author(s)
      Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul/Korea
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Electrical properties of extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction2015
    • Author(s)
      Kunihiro Takeda, Kazuki Mori, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul/Korea
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation]2014
    • Author(s)
      T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
    • Organizer
      International conference on metamaterials and nanophysics 2014
    • Place of Presentation
      Varadero, Cuba
    • Invited
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2014
    • Author(s)
      M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Conference on LED and its Ondustrial Application 2014
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Investigation of hole injection in UV-LEDs utilizing polarization effect2014
    • Author(s)
      Toshiki Yasuda, Kento Hayashi, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
    • Organizer
      LEDIA'14
    • Place of Presentation
      yokohama/japan
    • Year and Date
      2014-04-23
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] III族窒化物半導体埋め込みトンネル接合による電流狭窄構造2014
    • Author(s)
      桑野 侑香、堀川 航佑、森田 隆敏、井野 匡貴、竹内 哲也、上山 智、岩谷 素顕、赤﨑 勇
    • Organizer
      第61回春季応用物理学会学術講演会
    • Place of Presentation
      青山学院大学、相模原
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] GaNSbのSb取り込みと表面形態に関する検討2014
    • Author(s)
      小森 大資, 笹島 浩希, 鈴木 智行, 竹内 哲也, 上山 智, 岩谷 素顕, 赤崎 勇
    • Organizer
      電子情報通信学会2014　電子デバイス研究会（ED）
    • Place of Presentation
      名古屋
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 窒化物半導体LEDにおける正孔伝導に対する分極電荷の影響2014
    • Author(s)
      安田俊輝、勝野翔太、林健人、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation]2014
    • Author(s)
      Y. Kuwano, M. Ino, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Ⅲ族窒化物半導体による電流狭窄構造へのトンネル接合の応用2014
    • Author(s)
      井野 匡貴，南川 大智，水野尚之，竹内 哲也，上山 智，岩谷 素顕，赤﨑 勇
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation]2014
    • Author(s)
      井野匡貴、森田隆敏、桑野侑香、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
    • Organizer
      第61回春季応用物理学会学術講演会
    • Place of Presentation
      相模原
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Current confinement by nitride-based tunnel junction2014
    • Author(s)
      Y. Kuwano, M. Ino, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      ISplasma2014
    • Place of Presentation
      名城大学、名古屋
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 窒化物半導体HFET型UV光センサーの火炎センサー応用2014
    • Author(s)
      山本雄磨, 村瀬卓弥, 石黒真未, 山田知明, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Improvement of the light extraction efficiency in 350-nm-emission UV light-emitting diodes by novel distributed bragg reflector p-type electrode2014
    • Author(s)
      T. Nakashima, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      ISPlasma2014/IC-PLANTS2014
    • Place of Presentation
      Meijo Univ., Nagoya
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
    • Author(s)
      勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
    • Organizer
      電子情報通信学会2014　電子デバイス研究会（ED）
    • Place of Presentation
      名古屋
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
    • Author(s)
      勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
    • Organizer
      電子情報通信学会2014 電子デバイス研究会(ED)
    • Place of Presentation
      名古屋/日本
    • Year and Date
      2014-05-29
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] III族窒化物半導体トンネル接合上の高効率LED2014
    • Author(s)
      井野　匡貴、森田隆敏、 桑野侑香、渡邉雅大、竹内哲也、 上山 智、 岩谷素顕、赤崎 勇
    • Organizer
      第61回春季応用物理学会学術講演会
    • Place of Presentation
      青山学院大学、相模原
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2014
    • Author(s)
      桑野侑香、堀川航佑、森田隆敏、井野匡貴、竹内哲也、岩谷素顕、上山智、赤崎勇
    • Organizer
      第61回春季応用物理学会学術講演会
    • Place of Presentation
      相模原
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 青色LEDはなぜ発光するのか？その原理と未来への展望2014
    • Author(s)
      竹内哲也
    • Organizer
      第44回結晶成長国内会議特別講演会
    • Place of Presentation
      東京
    • Year and Date
      2014-11-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] MOCVD法によるSbを添加したAiNおよびGaNの作製2014
    • Author(s)
      笹島 浩希, 小森 大資, 竹内 哲也, 岩谷 素顕, 上山 智, 赤崎 勇
    • Organizer
      電子情報通信学会2014　電子デバイス研究会（ED）
    • Place of Presentation
      名古屋
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Low Resistive and Low Absorptive Nitride-Based Tunnel junctions2014
    • Author(s)
      Daichi Minamikawa, Daiki Takasuka, Masataka Ino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
    • Organizer
      2014 MRS FALL MEETING ＆ EXHIBIT
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-12-02
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 高InNモル分率GaInNを用いたトンネル接合(2)2014
    • Author(s)
      南川大智, 井野匡貴, 竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] MOCVDを用いたGaNSbの結晶成長2014
    • Author(s)
      小森 大資, 笹島 浩希, 鈴木 智行, 竹内 哲也, 上山 智, 岩谷 素顕, 赤崎 勇
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Band Enginnering Considering Negative and Positive polarization Charges in UV-LEDs2014
    • Author(s)
      Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
    • Organizer
      IWN2014
    • Place of Presentation
      wroclaw/poland
    • Year and Date
      2014-08-27
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 窒化物半導体LEDにおける分極電荷の補償2014
    • Author(s)
      勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
    • Organizer
      第６回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] 窒化物半導体LEDにおける正孔伝導に対する分極電荷の影響2014
    • Author(s)
      安田俊輝、勝野翔太、林健人、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
    • Organizer
      日本結晶成長学会ナノエピ分科会2014春季講演会 第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋/日本
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 高感度な窒化物半導体HFET型ソーラーブラインド紫外光センサー2014
    • Author(s)
      村瀬卓弥, 石黒真未, 山田知明, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 分極制御による紫外発光素子のホール注入の検討2014
    • Author(s)
      安田俊樹、林健人、竹田健一郎、中島翼、竹内哲也、上山智、岩谷素顕、赤崎勇、天野浩
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 窒化物半導体LEDにおける分極電荷の補償2014
    • Author(s)
      勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋/日本
    • Year and Date
      2014-07-25
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] GaInN系トンネル接合を有するLED2014
    • Author(s)
      南川大智, 井野匡貴, 竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
    • Organizer
      第６回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] An alternative hole injection:Nitride-based tunnel junctions2014
    • Author(s)
      T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
    • Organizer
      International conference on metamaterials and nanophysics 2014
    • Place of Presentation
      Varadero, Cuba
    • Invited
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Nitride-Based Light Emitting Diodes with Buried Tunnel Junctions2014
    • Author(s)
      M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Conference on LED and Its Industrial Application ’14
    • Place of Presentation
      パシフィコ横浜、横浜
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2014
    • Author(s)
      T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Conference on LED and its Industrial Application 2013
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Nitride-based hetero-field-effect-transistor-type photosensors with extremely high photosensitivity and complete solar-blind2014
    • Author(s)
      Takuya Murase, Mami Ishiguro, Yuma Yamamoto, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      ISPlasma2014/IC-PLANTS2014
    • Place of Presentation
      Meijo Univ., Nagoya
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] Ⅲ族窒化物半導体トンネル接合を用いた電流狭窄構造の低抵抗化2014
    • Author(s)
      井野　匡貴, 南川 大智, 竹内哲也, 上山 智, 岩谷素顕, 赤﨑勇
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-26286045

  • [Presentation] Nitride-Based p-Side Down LEDs on Tunnel Junction2014
    • Author(s)
      T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Conference on LED and Its Industrial Application ’13
    • Place of Presentation
      パシフィコ横浜、横浜
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2013
    • Author(s)
      中島啓介、渡邉雅大、加賀充、鈴木智行、南川大智、竹内哲也、上山智、岩谷素顕、赤崎勇
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京都
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] トンネル接合を有する青色マイクロLED の電流電圧特性2013
    • Author(s)
      中島啓介, 渡邉雅大 , 加賀 充 , 鈴木智行 , 南川大智, 竹内哲也, 上山 智 , 岩谷素顕, 赤崎 勇
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 青色面発光レーザに向けた電流狭窄構造の検討2013
    • Author(s)
      中島 啓介，渡邉 雅大，加賀 充，鈴木 智行，南川 大智，竹内 哲也，上山 智，岩谷 素顕，赤﨑 勇
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学、京都
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Reduction of the threshold power density in AlGaN/AlN multiquntum wells DUV (288 nm) optical pumped lasers2013
    • Author(s)
      Tomoaki Yamada, Yuko Matsubara, Hiroshi Shinzato, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha Univ., Kyoto
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] 10-μm-Square Micro LED Array with Tunnel Junction2013
    • Author(s)
      Masahiro Watanabe, Mitsuru Kaga, Koji Yamashita, Tomoyuki Suzuki, Daichi Minamikawa, Yuka Kuwano, Tetsuya Takeuchi, Satoshi Karniyarna, Motoaki Iwaya, and Isarnu Akasaki
    • Organizer
      10th International Conference of Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Bandgap Dependence in Nitride Semiconductor-Based Tunnel Junctions2013
    • Author(s)
      D. Minamikawa, M. Kaga, Y. Kuwano, T. Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      The 6th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      New Taipei City, Taiwan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] トンネル接合を用いた多接合窒化物半導体の検討2013
    • Author(s)
      黒川泰視, 合田智美, 加賀　充, 岩谷素顕, 竹内哲也, 上山　智, 赤﨑　勇, 天野　浩
    • Organizer
      電子情報通信学会 (ED, CPM, LQE合同研究会）
    • Place of Presentation
      大阪大学、大阪
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2013
    • Author(s)
      森田隆敏、加賀充、桑野侑香、松井健城、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] トンネル接合を用いたIII族窒化物半導体多接合型太陽電池2013
    • Author(s)
      合田智美, 黒川泰視，森田隆敏, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
    • Organizer
      応用物理学会 SC東海地区学術講演会2013
    • Place of Presentation
      名古屋大学、名古屋
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2013
    • Author(s)
      竹内哲也、岩谷素顕、上山智、赤崎勇
    • Organizer
      日本学術振興ワイドギャップ半導体光・電子デバイス第162委員会第86回研究会
    • Place of Presentation
      名城大、名古屋
    • Invited
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation]2013
    • Author(s)
      D. Minamikawa, M. Kaga, Y. Kuwano, T. Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors 2013
    • Place of Presentation
      New Taipei City, Taiwan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] VSL法を用いたAlGaN/AlN多重量子井戸の光学利得測定2013
    • Author(s)
      山田 知明, 松原 由布子, 竹田 健一郎, 岩谷 素顕, 竹内 哲也, 上山 智, 赤崎 勇, 天野 浩
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] トンネル接合を活用した窒化物半導体多接合太陽電池の作製2013
    • Author(s)
      黒川泰視，合田智美，加賀充，岩谷素顕，竹内哲也，上山智，赤﨑勇，天野浩
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学、京都
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 横方向p型活性化における雰囲気ガス依存性2013
    • Author(s)
      桑野侑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智、赤﨑勇
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Nitride-based p-side down LEDs on tunnel junction2013
    • Author(s)
      T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
    • Organizer
      Conference on LED and its industrial application '13
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Microscopic structure analysis of a thick AlN film grown on a trench-patterned AlN/sapphire template by X-ray microdiffraction2013
    • Author(s)
      K. T. Dinh, S. Takeuchi, K. Nakamura, T. Arauchi, Y. Nakamura., H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura and Akira Sakai
    • Organizer
      MRS-JSAP joint sympojium
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-16
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] X線回折による断各周期溝加工構造AlN/Sapphire基板上エピタキシャル成長AlN厚膜の結晶構造解析2013
    • Author(s)
      荒内琢士, 竹内正太郎, 中村邦彦, KhanDhin, 中村芳明, 三宅秀人, 平松和政, 酒井朗
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-19
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation]2013
    • Author(s)
      黒川泰視、合田智美、加賀充、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京都
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Externally high sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors2013
    • Author(s)
      M. Ishiguro, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      3rd International conterence on Materials and Applications for Sensors and Transducers
    • Place of Presentation
      Progue, Czech Republic
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] LED構造上GaNトンネル接合の低抵抗化2013
    • Author(s)
      南川大智、加賀充、岩谷素顕、竹内哲也、上山智、赤﨑勇
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 非対称AlN/GaN多層膜反射鏡の設計と作製2013
    • Author(s)
      萩原康大、矢木康太、安田俊輝、竹田健一郎、岩谷素顕、竹内哲也、上山智、赤﨑勇
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] 350nm紫外LED光取り出し効率改善に関する研究2013
    • Author(s)
      中嶋 翼, 竹田健一郎, 岩谷素顕, 上山 智, 竹内哲也, 赤崎 勇, 天野 浩
    • Organizer
      電子情報通信学会(ED, CPM, LQE合同研究会)
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-25000011

  • [Presentation] オーバーフロー抑制に向けたnp接合GaInN-LED2013
    • Author(s)
      竹内哲也、岩谷素顕、上山　智、赤﨑　勇
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会　第86回研究会
    • Place of Presentation
      名城大学、名古屋
    • Invited
    • Data Source
      KAKENHI-PROJECT-23560015

  • [Presentation] Dislocation density dependence of stimulated emission characteristics in AlGaN/AlN multi-quantum wells2013
    • Author(s)
      Motoaki Iwaya, Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasak, and Hiroshi Amano
    • Organizer
      8th International Workshop on Bulk Nitride Semiconductor
    • Place of Presentation
      Kloster Seeon, Germany
    • Data Source
      KAKEN