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Imai Daichi  今井 大地

ORCIDConnect your ORCID iD *help
Researcher Number 20739057
Affiliation *help 2016 – 2017 : 名城大学, 理工学部, 助教
2014 – 2015 : 千葉大学, 学術研究推進機構産業連携研究推進ステーション, 特任研究員
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Keywords
Principal Investigator
短周期超格子 / 1分子層InN / 窒化物半導体 / 擬似混晶(秩序混晶) / 1分子層InN / 半導体レーザー
  • Research Projects

    (2results)
  • Research Products

    (13results)
  • Co-Researchers

    (3People)
  •  InN/GaN短周期超格子による窒化物半導体レーザー導波光制御構造の高機能化Principal InvestigatorOngoing

    • Principal Investigator
      今井 大地
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University
  •  Continuous band engineering of quasi-InGaN ternary alloy based on short-period superlatticesPrincipal Investigator

    • Principal Investigator
      Imai Daichi
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University
      Chiba University

All 2016 2015

All Journal Article Presentation

  • [Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature2016

    • Author(s)
      Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Eun-Sook Hwang, Daichi Imai, and Takaomi Itoi
    • Journal Title

      Journal of Applied Physics

      Volume : 120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Journal Article] Proposal of leak current passivation for InGaN solar cells to reduce the leakage current2016

    • Author(s)
      Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Journal Title

      Applied Physics Letters

      Volume : 108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature2016

    • Author(s)
      Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Daichi Imai, and Eun-Sook Hwang
    • Journal Title

      Journal of Applied Physics

      Volume : 120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Journal Article] Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelength up to 570 nm2016

    • Author(s)
      Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Journal Title

      Applied Physics Letters

      Volume : 108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Journal Article] Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy2016

    • Author(s)
      Kazuhide Kusakabe, Naoki Hashimoto, Takaomi Itoi, Ke Wang, Daichi Imai, and Akihiko Yoshikawa
    • Journal Title

      Applied Physics Letters

      Volume : 108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Journal Article] InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys2015

    • Author(s)
      Kazuhide Kusakabe, Daichi Imai, Ke Wang, and Akihiko Yoshikawa
    • Journal Title

      Physica Status Soldi C

      Volume : * Pages : 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its application for fabricating ordered alloys in whole III-N system2016

    • Author(s)
      A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    • Organizer
      2016 Lawrence symposium on epitaxy
    • Place of Presentation
      Arizona, USA
    • Year and Date
      2016-02-20
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its extension for whole III-N (AlN/GaN/InN) system2015

    • Author(s)
      A. Yoshikawa, K. Kusakabe, k. Wang, and D. Imai
    • Organizer
      9th Workshop on Frontiers in Electronics (WOFE-2015) & Workshop on Multifunctional Nanomaterials
    • Place of Presentation
      San Juan, Commonwealth of Puerto Rico
    • Year and Date
      2015-11-15
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] Development of Superfine Structure One Monolayer-thick InN/GaN-Matrix MQW System using Novel ALEp Method: Dynamic-ALEp2015

    • Author(s)
      A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    • Organizer
      15th International Conference on Atomic Layer Deposition ALD2015
    • Place of Presentation
      Portland, Oregon, USA
    • Year and Date
      2015-06-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] Proposal of “1 ML” InN / GaN Matrix Coherent-Structure QW System and Its Application for Novel Structure Photonic Devices2015

    • Author(s)
      A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    • Organizer
      Invited Lecture for IEEE Photonics Society
    • Place of Presentation
      McGill University, Montreal, Canada
    • Year and Date
      2015-06-26
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] 1 ML InN/GaN matrix coherent-structure QW system and its evolution to short period superlattice-based InGaN ternary alloys2015

    • Author(s)
      A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
    • Organizer
      42nd Int. Conf. on Metallurgical Coatings and Thin Film
    • Place of Presentation
      Town and Country Conv. Center, San Diego, CA, USA
    • Year and Date
      2015-04-20
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] In-situ ellipsometry observation of Al adatoms and oxidation/nitridation processes for deactivating leak paths in nitride solar cells2015

    • Author(s)
      Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Data Source
      KAKENHI-PROJECT-15K18036
  • [Presentation] InGaN quasi-ternary alloys based on (InN)1/(GaN)4 short-period superlattices2015

    • Author(s)
      Daichi Imai, Kazuhide Kusakabe, Ke Wang, and Akihiko Yoshikawa
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Data Source
      KAKENHI-PROJECT-15K18036
  • 1.  Akihiko Yoshikawa
    # of Collaborated Projects : 1results
    # of Collaborated Products : 8results
  • 2.  Kazuhide Kusakabe
    # of Collaborated Projects : 1results
    # of Collaborated Products : 8results
  • 3.  Wang Ke
    # of Collaborated Projects : 1results
    # of Collaborated Products : 13results

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