Imai Daichi 今井大地

Researcher Number	20739057
Affiliation *help	2015 – 2018 : 千葉大学, 学術研究推進機構産業連携研究推進ステーション, 特任研究員 2016 – 2018 : 名城大学, 理工学部, 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 短周期超格子 / １分子層InN / 窒化物半導体 / 擬似混晶（秩序混晶） / 1分子層InN / 半導体レーザー

InN/GaN短周期超格子による窒化物半導体レーザー導波光制御構造の高機能化Principal InvestigatorOngoing
- Principal Investigator
  
  今井大地
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
Continuous band engineering of quasi-InGaN ternary alloy based on short-period superlatticesPrincipal Investigator
- Principal Investigator
  
  Imai Daichi
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
  Chiba University

All 2016 2015

All Journal Article Presentation

[Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature2016
- Author(s)
  Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Eun-Sook Hwang, Daichi Imai, and Takaomi Itoi
- Journal Title
  
  Journal of Applied Physics
  
  Volume : 120
- DOI
  10.1063/1.4967928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Journal Article] Proposal of leak current passivation for InGaN solar cells to reduce the leakage current2016
- Author(s)
  Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Journal Title
  
  Applied Physics Letters
  
  Volume : 108
- DOI
  10.1063/1.4940970
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature2016
- Author(s)
  Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Daichi Imai, and Eun-Sook Hwang
- Journal Title
  
  Journal of Applied Physics
  
  Volume : 120
- DOI
  10.1063/1.4972027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Journal Article] Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelength up to 570 nm2016
- Author(s)
  Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Journal Title
  
  Applied Physics Letters
  
  Volume : 108
- DOI
  10.1063/1.4942507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Journal Article] Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy2016
- Author(s)
  Kazuhide Kusakabe, Naoki Hashimoto, Takaomi Itoi, Ke Wang, Daichi Imai, and Akihiko Yoshikawa
- Journal Title
  
  Applied Physics Letters
  
  Volume : 108
- DOI
  10.1063/1.4946860
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Journal Article] InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys2015
- Author(s)
  Kazuhide Kusakabe, Daichi Imai, Ke Wang, and Akihiko Yoshikawa
- Journal Title
  
  Physica Status Soldi C
  
  Volume : * Pages : 1-4
- DOI
  10.1002/pssc.201510306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its application for fabricating ordered alloys in whole III-N system2016
- Author(s)
  A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
- Organizer
  2016 Lawrence symposium on epitaxy
- Place of Presentation
  Arizona, USA
- Year and Date
  2016-02-20
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its extension for whole III-N (AlN/GaN/InN) system2015
- Author(s)
  A. Yoshikawa, K. Kusakabe, k. Wang, and D. Imai
- Organizer
  9th Workshop on Frontiers in Electronics (WOFE-2015) & Workshop on Multifunctional Nanomaterials
- Place of Presentation
  San Juan, Commonwealth of Puerto Rico
- Year and Date
  2015-11-15
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] Development of Superfine Structure One Monolayer-thick InN/GaN-Matrix MQW System using Novel ALEp Method: Dynamic-ALEp2015
- Author(s)
  A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
- Organizer
  15th International Conference on Atomic Layer Deposition ALD2015
- Place of Presentation
  Portland, Oregon, USA
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] Proposal of “1 ML” InN / GaN Matrix Coherent-Structure QW System and Its Application for Novel Structure Photonic Devices2015
- Author(s)
  A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
- Organizer
  Invited Lecture for IEEE Photonics Society
- Place of Presentation
  McGill University, Montreal, Canada
- Year and Date
  2015-06-26
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] 1 ML InN/GaN matrix coherent-structure QW system and its evolution to short period superlattice-based InGaN ternary alloys2015
- Author(s)
  A. Yoshikawa, K. Kusakabe, K. Wang, and D. Imai
- Organizer
  42nd Int. Conf. on Metallurgical Coatings and Thin Film
- Place of Presentation
  Town and Country Conv. Center, San Diego, CA, USA
- Year and Date
  2015-04-20
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] In-situ ellipsometry observation of Al adatoms and oxidation/nitridation processes for deactivating leak paths in nitride solar cells2015
- Author(s)
  Ke Wang, Daichi Imai, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Data Source
  KAKENHI-PROJECT-15K18036
[Presentation] InGaN quasi-ternary alloys based on (InN)1/(GaN)4 short-period superlattices2015
- Author(s)
  Daichi Imai, Kazuhide Kusakabe, Ke Wang, and Akihiko Yoshikawa
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Data Source
  KAKENHI-PROJECT-15K18036

1. Akihiko Yoshikawa

# of Collaborated Projects : 1results

# of Collaborated Products : 8results
2. Kazuhide Kusakabe

# of Collaborated Projects : 1results

# of Collaborated Products : 8results
3. Wang Ke

# of Collaborated Projects : 1results

# of Collaborated Products : 13results

Imai Daichi 今井 大地

Research Projects

Research Products

Co-Researchers

InN/GaN短周期超格子による窒化物半導体レーザー導波光制御構造の高機能化Principal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Continuous band engineering of quasi-InGaN ternary alloy based on short-period superlatticesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Proposal of leak current passivation for InGaN solar cells to reduce the leakage current2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelength up to 570 nm2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys2015

Author(s)

Journal Title

DOI

Data Source

[Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its application for fabricating ordered alloys in whole III-N system2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Systematic study on dynamic atomic layer epitaxy (D-ALEp) of InN on/in GaN matrix and its extension for whole III-N (AlN/GaN/InN) system2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Development of Superfine Structure One Monolayer-thick InN/GaN-Matrix MQW System using Novel ALEp Method: Dynamic-ALEp2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Proposal of “1 ML” InN / GaN Matrix Coherent-Structure QW System and Its Application for Novel Structure Photonic Devices2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 1 ML InN/GaN matrix coherent-structure QW system and its evolution to short period superlattice-based InGaN ternary alloys2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] In-situ ellipsometry observation of Al adatoms and oxidation/nitridation processes for deactivating leak paths in nitride solar cells2015

Author(s)

Organizer

Place of Presentation

Imai Daichi 今井大地