MEGURO Takashi 目黒多加志

… Alternative Names

目黒多加志メグロタカシ

Less

Researcher Number	20182149
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2019 – 2021: 東京理科大学, 理学部第二部物理学科, 教授 1999 – 2001: 理化学研究所, 半導体工学研究室, 副主任研究員 1997: RIKEN,Semiconductor Laboratory, Advanced Researcher, 半導体工学研究室, 副主任研究員 1994 – 1996: 理化学研究所, レーザー科学研究グループ, 先任研究員 1995: RIKEN,Laser Science Group, Advanced Researcher, レーザー化学研究グループ, 先任研究員 … More 1992 – 1993: 理化学研究所, レーザー科学研究グループ, 研究員 1990: 理化学研究所, レーザー科学研究グループ, 研究員 1987: The Institute of Physical and Chemical Research, レーザー科学研究グループ, 研究員補 Less
Review Section/Research Field	Principal Investigator Applied materials / Material processing/treatments / Science and Engineering Except Principal Investigator Electronic materials/Electric materials / Medium-sized Section 14:Plasma science and related fields / Applied materials
Keywords	Principal Investigator ガリウム砒素 / ドライエッチング / 塩素 / ガリウムヒ素 / 原子層エッチング / 自動停止 / デジタルエッチング / 原子層 / 非線形成 / 周期構造 … More / 直接パターニング / 非線形性 / 位相制御 / 干渉 / コヒーレント光 / ポテンシャルスパッタリング / 欠陥 / 水素 / シリコン / ナノ構造 / 電子状態制御 / ダイヤモンド / グラファイト / 多価イオン … More Except Principal Investigator GaAs / MOVPE / 自己停止機構 / 有機金属気相成長法 / 原子層成長 / Self-limiting effect / 量子閉じ込め効果 / フォトルミネッセンス / 選択成長 / 量子ナノ構造 / ガリウムヒ素半導体 / 動態観測 / 損傷敏感試料 / 電子顕微鏡 / 半導体フォトカソード / AlGaAs半導体 / 窒化ガリウム半導体 / パルス電子ビーム / 負電子親和力表面 / 半導体 / 電子ビーム / フォトカソード / Ar^+ laser / パターン化結晶成長 / 原子層エピタキシー / ALE / レーザーMOCV / アルコンイオンレーザ / 有機金属 / カリウム砒素 / 単原子層成長 / Fibonacci progression / X-ray diffraction / Atomic layer superlattice / Quasi-crystal / Atomic Layer Epitaxy / フィボナッチ数列 / X線回折 / 原子層超格子 / 準結晶 / Quantum confinement effect / Photoluminescnec / Selective growth / Quantum Nano-structures / Atomic Layr Epitaxy / photoassisted decomposition / atomic layer epitaxy / triethylgallium / laser MOVPE / gallium arsenide Less

Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
- Principal Investigator
  
  Nishitani Tomohiro
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Nagoya University
低速多価イオンビームによる原子操作Principal Investigator
- Principal Investigator
  
  目黒多加志
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (B)
- Review Section
  
  Science and Engineering
- Research Institution
  The Institute of Physical and Chemical Research
コヒーレント光を用いた表面原子の一括操作法の開発研究Principal Investigator
- Principal Investigator
  
  目黒多加志
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Material processing/treatments
- Research Institution
  The Institute of Physical and Chemical Research
Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional Materials
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
原子層エピタキシ-選択成長による低次元量子構造作製に関する研究
- Principal Investigator
  
  岩井荘八
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structures
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
原子層エッチング技術の開発研究Principal Investigator
- Principal Investigator
  
  目黒多加志
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The Institute of Physical and Chemical Research
レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The Institute of Physical and Chemical Research

All 2021 2020

All Journal Article Presentation

[Journal Article] ANALYTICAL STUDY ON TPD MEASUREMENTS DURING NEA ACTIVATION PROCESS2021
- Author(s)
  Masaru Jono, Yuhi Sada, Takashi Meguro
- Journal Title
  
  Proceedings of the 39th Symposium on Materials Science and Engineering
  
  Volume: 39 Pages: 14-18
- Open Access
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Study on work function and corresponding electron emission during NEA activation of GaAs surfaces2020
- Author(s)
  Sada Y.、Meguro T.
- Journal Title
  
  Applied Surface Science
  
  Volume: 513 Pages: 145699-145699
- DOI
  10.1016/j.apsusc.2020.145699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation2020
- Author(s)
  Inagaki Yuta、Meguro Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 045504-045504
- DOI
  10.35848/1347-4065/ab7ef3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] NEA活性化過程における量子効率とCs吸着状態のO2供給量依存性2021
- Author(s)
  佐田雄飛、城生大、目黒多加志
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] NEA活性化方法におけるInGaNフォトカソードの電子放出特性の違い, The difference of InGaN photocathode with photoemission characteristic in NEA activation method2021
- Author(s)
  鹿島将央, 佐藤大樹, 小泉淳, 飯島北斗, 西谷智博, 本田善央, 天野浩, 目黒多加志
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] yo-yo法を用いたNEA活性化過程の昇温脱離スペクトル測定2020
- Author(s)
  城生大、佐田雄飛、目黒多加志
- Organizer
  第39回法政大学イオンビーム工学研究所シンポジウム
- Data Source
  KAKENHI-PROJECT-19H00666

1. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 7 results

# of Collaborated Products: 0 results
2. IWAI Sohachi (40087474)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. ISSHIKI Hideo (60260212)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. SEGAWA Yusaburo (30087473)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. Nishitani Tomohiro (40391320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. 村上浩一 (10116113)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 尾笹一成 (10231234)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 成田哲博 (30360613)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. 石川史太郎 (60456994)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 田渕雅夫 (90222124)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 市川修平 (50803673)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 保田英洋 (60210259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 七井靖 (80755166)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. DOI Atsutoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

MEGURO Takashi 目黒 多加志

目黒 多加志 メグロ タカシ

Research Projects

Research Products

Co-Researchers

Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

低速多価イオンビームによる原子操作Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

コヒーレント光を用いた表面原子の一括操作法の開発研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional Materials

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

原子層エピタキシ-選択成長による低次元量子構造作製に関する研究

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

原子層エッチング技術の開発研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作

Principal Investigator

Project Period (FY)

Research Category

Research Institution

Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] ANALYTICAL STUDY ON TPD MEASUREMENTS DURING NEA ACTIVATION PROCESS2021

Author(s)

Journal Title

Data Source

[Journal Article] Study on work function and corresponding electron emission during NEA activation of GaAs surfaces2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Study on surface processes and photoemission properties of NEA-GaAs after repetitive sequence of thermal pretreatment and NEA activation2020

Author(s)

Journal Title

DOI

Data Source

[Presentation] NEA活性化過程における量子効率とCs吸着状態のO2供給量依存性2021

Author(s)

Organizer

Data Source

[Presentation] NEA活性化方法におけるInGaNフォトカソードの電子放出特性の違い, The difference of InGaN photocathode with photoemission characteristic in NEA activation method2021

Author(s)

Organizer

Data Source

[Presentation] yo-yo法を用いたNEA活性化過程の昇温脱離スペクトル測定2020

MEGURO Takashi 目黒多加志

目黒多加志メグロタカシ