IWAI Sohachi 岩井荘八

Researcher Number	40087474
External Links
Affiliation *help	2002 : 理化学研究所, 半導体工学研究室, 主任研究員 1997 – 2002 : RIKEN,Semiconductor Laboratory, Advanced Researcher, 半導体工学研究室, 先任研究員 1994 – 1997 : 理化学研究所, レーザー科学研究グループ, 先任研究員 1992 : 理化学研究所, レーザ科学研究グループ, 研究員 1991 : 理科学研究所, レーザ科学研究グループ, 研究員 1990 : 理化学研究所, レーザー科学研究グループ, 研究員 1986 – 1987 : 理化学研究所, レーザー科学研究グループ, 研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied materials
Keywords	Principal Investigator GaAs / 有機金属気相成長法 / MOVPE / 自己停止機構 / 原子層成長 / 量子ナノ構造 / フォトルミネッセンス / 選択成長 / Self-limiting effect / 量子閉じ込め効果 … More Except Principal Investigator GaN / RHEED / AlGaN / MOCVD / SSBE / ガスソースMBE / Quantum dot / 超音速ビーム / 紫外半導体レーザ / GSMBE / 交互供給法 / Wide bandgap / ワイドバンドギャップ / 深紫外LED / In-doping / MOCVD法 / ハイブリッド励起CVD法 / 水銀増感光CVD法 / 超音速 / 半導体薄膜の結晶成長 / 量子箱 / Mgドーピング / 紫外LED / 交互供給成長法 / 貫通転位密度 / GaAs / III族窒化物半導体 / 並進運動エネルギー / エピタキシ- / Quaternary InAlGaN / Short pulse supersonic beam epitaxy / Optical properties / 拡散を促進 / サファイヤ / 有機金属気相成長法 / UV-LEDs / フォトルミネッセンス / ホール濃度 / 成長制御性 / Supersonic beam / 交互供給コドーピング / 時間分割的な制御 / 高濃度P型 / Epitaxial growth / 有機金属 / 超音速分子ビーム / Arレ-ザ励起MOVPE / コドーピング / Mg-doping / Deep UV-LED / パターン化結晶成長 / 素過程を制御 / 原子層成長 / InAlGaN4元混晶 / 高速応答の電子線回折観察 / 原子層エピタキシー / X線多層膜ミラー / MOVPE / Controllability of epitaxial growth / Hall-effect measurement / In組成変調 / ディジタル光CVD法 / 短パルスビーム / Control of surface process / 精密な成長制御性 / ノズルビーム / 第一原理計算 / High kinetic energy / p型 / 窒化物半導体 / 反応制御 / 不純物対 / 素過程 / Threading dislocation density / 短パルス超音速ビームエピタキシ法 / 紫外高効率発光 / Inドーピング / In segregation / Co-doping / 表面光干渉法 / エピタキシャル / ミリ秒時間分解 / アルコンイオンレーザ / 吸着原子の脱離過程の観察 / 短パルス超音速ノズルビームエピタキシャル法 / 電流注入 / 高速表面観察 / 短パルス超音速ノズルビームエピタキシ-法 / パルス供給法 / ALE / フォートルミネセンス / 単原子層成長 / Surface processes / 短パルス状 / MOCVD成長 / 貫通転移密度 / SSBE法 / Alternating supply method / GaN基板 / カリウム砒素 / MBE / デュアルビーム法 / 内部量子効率 / Photoluminescence / 短パルス / レ-ザ溶融再結晶化法 / レーザーMOCV / 遷移金属 / エピタキシャル成長法 / Ar^+ laser / アトミックレジスト / 結晶成長 / Epitaxial crystal growth / Ultra-fine controlled epitaxial growth Less

Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
- Principal Investigator
  
  HIRAYAMA Hideki, 青柳克信
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
  Tokyo Institute of Technology
Study on Impurity Co-Doping by Atomic Positional ControlPrincipal Investigator
- Principal Investigator
  
  IWAI Souhachi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN (The Institute of Physical & Chemical Research)
Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxy
- Principal Investigator
  
  SHEN Xu-Qiang
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)
金属原子層成長法による高性能X線ミラーの作製
- Principal Investigator
  
  石井真史
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional MaterialsPrincipal Investigator
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
Development of reactively controlled super-sonic nozzle beam epitaxial growth technique
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)
原子層エピタキシ-選択成長による低次元量子構造作製に関する研究Principal Investigator
- Principal Investigator
  
  岩井荘八
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Short pulse Supersonic Beam Epitaxy
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  THE INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH (RIKEN)
Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structuresPrincipal Investigator
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作Principal Investigator
- Principal Investigator
  
  岩井荘八
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The Institute of Physical and Chemical Research

All 2002

All Journal Article

[Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages : 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages : 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High Doped p-Type GaN Grwon by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai
- Journal Title
  
  Material Research Society Symposium Proceeding 719
  
  Pages : 3-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai
- Journal Title
  
  Material Research Society Symposium Proceeding 719
  
  Pages : 3-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006

1. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects : 10results

# of Collaborated Products : 1results
2. MEGURO Takashi (20182149)

# of Collaborated Projects : 5results

# of Collaborated Products : 0results
3. HIRAYAMA Hideki (70270593)

# of Collaborated Projects : 4results

# of Collaborated Products : 2results
4. ISSHIKI Hideo (60260212)

# of Collaborated Projects : 3results

# of Collaborated Products : 0results
5. SEGAWA Yusaburo (30087473)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
6. ZHANG Suiah (20260218)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
7. SHEN Xu-Qiang (50272381)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
8. 高橋清 (10016313)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
9. 吉川明彦 (20016603)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
10. 松村正清 (30110729)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
11. 坪内和夫 (30006283)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
12. 垂井康夫 (10143629)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
13. 田中悟 (80281640)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
14. NOMURA Shintarou (90271527)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
15. KAWASAKI Koji (10234056)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
16. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
17. 石井真史 (90281667)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
18. DEN Akiharu

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
19. DOI Atsutoshi

# of Collaborated Projects : 1results

# of Collaborated Products : 0results

IWAI Sohachi 岩井 荘八

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Study on Impurity Co-Doping by Atomic Positional ControlPrincipal Investigator

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Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional MaterialsPrincipal Investigator

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原子層エピタキシ-選択成長による低次元量子構造作製に関する研究Principal Investigator

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Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structuresPrincipal Investigator

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レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作Principal Investigator

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[Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002

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IWAI Sohachi 岩井荘八