Shen Xu-Qiang 沈旭強

… Alternative Names

沈旭強シンキヨクキヨウ

SHEN Xu-Qiang 沈旭強

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Researcher Number	50272381
Affiliation (Current)	2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 上級主任研究員
Affiliation (based on the past Project Information) *help	2020 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 総括研究主幹 1996 – 1998: 理化学研究所, 半導体工学研究室, 基礎科学特別研究員 1996: The Institute of Physical and Chemieal Research Researcher, 半導体工学研究室, 基礎特研
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 30010:Crystal engineering-related Except Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator SSBE / GSMBE / RHEED / GaN / AlGaN / In-doping / 量子箱 / Inドーピング / 超音速ビーム / ガスソースMBE … More / フォートルミネセンス / Quantum dot / AlN / 高温結晶成長 / AlN薄膜 / 高温成長 / 微細構造 / 不純物 / アンモニアフリー / 有機金属気相成長 / 高温 … More Except Principal Investigator GaN / RHEED / GaAs / 超音速ビーム / 量子箱 / ガスソースMBE / 超音速 / 短パルスビーム / エピタキシャル / 結晶成長 / 短パルス超音速ビームエピタキシ法 / 並進運動エネルギー / 素過程を制御 / 拡散を促進 / 半導体薄膜の結晶成長 / SSBE法 / 高速応答の電子線回折観察 / 吸着原子の脱離過程の観察 / SSBE / Epitaxial growth / AlGaN / Quantum dot / 窒化ガリウム / 縦型パワーデバイス / 高耐圧 / 終端構造 / 電界緩和 / イオン注入 / 硼素 / GaNパワーデバイス / 高耐圧化 / 外周構造 / 硼素イオン注入 / 絶縁化 Less

硼素イオン注入による絶縁性GaN結晶層を用いた超低損失パワー素子の高破壊耐量化
- Principal Investigator
  
  三浦喜直
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxyPrincipal Investigator
- Principal Investigator
  
  沈旭強
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxyPrincipal Investigator
- Principal Investigator
  
  SHEN Xu-Qiang
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)
Development of reactively controlled super-sonic nozzle beam epitaxial growth technique
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)

All 2022 2021

All Journal Article Presentation Patent

[Journal Article] Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022
- Author(s)
  Shen Xu-Qiang、Kojima Kazutoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 581 Pages: 126496-126496
- DOI
  10.1016/j.jcrysgro.2021.126496
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02643
[Patent] 半導体装置および半導体装置の製造方法2021
- Inventor(s)
  三浦喜直　中島昭　沈旭強　平井悠久　原田信介
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-072595
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-20K04590
[Presentation] アンモニアフリー高温有機金属気相成長法による高品質(10-13)半極性面AlNヘテロエピタキシャル成長2021
- Author(s)
  沈旭強、児島一聡
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] High quality polar and semipolar AlN grown by ammonia-free high temperature metalorganic chemical vapor deposition2021
- Author(s)
  X. Q. Shen, and K. Kojima
- Organizer
  The 7th International Forum on Wide Bandgap Semiconductors (IFWS2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] アンモニアフリー高温有機金属気相成長法で成長したAlNヘテロエピタキシャル薄膜中の微細構造評価2021
- Author(s)
  沈旭強、児島一聡
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02643

1. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. IWAI Sohachi (40087474)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. 張随安 (20260218)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 田中悟 (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 三浦喜直 (90828287)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 中島昭 (60450657)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 児島一聡 (40371041)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Shen Xu-Qiang 沈 旭強

沈 旭強 シン キヨクキヨウ

SHEN Xu-Qiang 沈 旭強

Research Projects

Research Products

Co-Researchers

硼素イオン注入による絶縁性GaN結晶層を用いた超低損失パワー素子の高破壊耐量化

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of reactively controlled super-sonic nozzle beam epitaxial growth technique

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022

Author(s)

Journal Title

DOI

Data Source

[Patent] 半導体装置および半導体装置の製造方法2021

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Presentation] アンモニアフリー高温有機金属気相成長法による高品質(10-13)半極性面AlNヘテロエピタキシャル成長2021

Author(s)

Organizer

Data Source

[Presentation] High quality polar and semipolar AlN grown by ammonia-free high temperature metalorganic chemical vapor deposition2021

Author(s)

Organizer

Data Source

[Presentation] アンモニアフリー高温有機金属気相成長法で成長したAlNヘテロエピタキシャル薄膜中の微細構造評価2021

Author(s)

Organizer

Data Source

Shen Xu-Qiang 沈旭強

沈旭強シンキヨクキヨウ

SHEN Xu-Qiang 沈旭強