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HIRAYAMA Hideki  平山 秀樹

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Researcher Number 70270593
Other IDs
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Affiliation (Current) 2022: 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員
2022: 国立研究開発法人理化学研究所, 光量子工学研究センター, チームリーダー
Affiliation (based on the past Project Information) *help 2018 – 2020: 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員
2015 – 2017: 国立研究開発法人理化学研究所, 平山量子光素子研究室, 主任研究員
2014: 理研, 平山量子光素子研究室, 主任研究員
2012 – 2014: 独立行政法人理化学研究所, 平山量子光素子研究室, 主任研究員
2012: 埼玉大学, 理化学研究所・平山量子光素子研究室, 主任研究員 … More
2011: 理化学研究所
2011: 理化学研究所, 平山量子光素子研究室, 主任研究員
2006 – 2011: 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, チームリーダー
2010: 埼玉大学, 理化学研究折・テラヘルツ量子素子研究チーム, チームリーダー
2009: 理化学研究所, テラヘルツ量子素子研究チーム, チームリーダー
2007: The Institute of Physical and Chemical Research, Tera-Hertz Quantum Device Group, Team Leader
2006: 東京工業大学, 理化学研究所・高効率LED研究開発チーム, 副主任研究員
2005: 理化学研究所, 極微テバイス工学研究室, 研究員
2004: 東京工業大学, 理化学研究所・極微デバイス工学研究室, 研究員
2003 – 2004: RIKEN, Advanced Devices laboratory, Senior Research Scientist, 石橋極微デバイス工学研究室, 先任研究員
2003: 東京工業大学, 理化学研究所・極微デバイス研究室, 研究員
2003: 独立行政法人理化学研究所, 極微デバイス工学研究室, 先任研究員
2002: The Institute of Physical and Chemical Research, Senior Research Scientist, 半導体工学研究室, 先任研究員
1998 – 2002: 理化学研究所, 半導体工学研究室, 研究員 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Crystal engineering
Except Principal Investigator
Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related / Basic Section 30010:Crystal engineering-related
Keywords
Principal Investigator
深紫外LED / 窒化物半導体 / AlGaN / 貫通転位密度 / MOCVD / 内部量子効率 / 結晶成長 / 紫外LED / テラヘルツ / 量子カスケードレーザ … More / サブバンド間遷移 / 電流注入 / 超格子 / III族窒化物半導体 / 有機金属気相成長法 / InAlGaN4元混晶 / In組成変調 / 金属プラズモン導波路 / 分子線エピタキシー / 自然放出光 / MBE結晶成長 / ワイドバンドギャップ / MOCVD法 / 交互供給法 / Mgドーピング / 交互供給成長法 / 紫外半導体レーザ / Wide bandgap / 量子ドット / 紫外レーザー / 量子ドットレーザー / アンチサーファクタント / 外部量子効率 / 注入効率 / InAlGaN / AlNテンプレート / 深外LED / AIGaN / InAIGaN / AINテンプレート / 貫通転位 / InAlGN4元混晶 / 高輝度LED / p型半導体 / AlN / Si基板 / 縦型LED / 光取りだし効率 / 光取り出し効率 / コドーピング / 交互供給コドーピング / 高濃度P型 / MBE / 第一原理計算 / 不純物対 / p型 / GaN / サファイヤ / ホール濃度 / パルス供給法 / Deep UV-LED / Alternating supply method / Mg-doping / Co-doping / Hall-effect measurement / フォトルミネッセンス / 紫外高効率発光 / 貫通転移密度 / GaN基板 / MOCVD成長 / Quaternary InAlGaN / In segregation / UV-LEDs / Threading dislocation density / Optical properties / Photoluminescence / 量子カスケードレーザー / 未開拓波長 / バンド内遷位 / バンド内遷位発光 / バンド内遷移 / 特異構造結晶 / テラヘルツ量子カスケードレーザ / THz-QCL / テラヘルツQCL / THｚ－QCL / 深紫外LD / 量子エレクトロニクス … More
Except Principal Investigator
AlGaN / 欠陥準位 / フォトルミネッセンス / 2波長励起 / 非接触測定 / 半導体 / 非発光再結合準位 / フォトニック結晶 / 自然放出光制御 / 自然放出寿命 / 位相制御領域 / マイクロマニピュレイション法 / マイクロマニピュレーション法 / 無しきい値レーザー / リングレーザー / 選択結晶成長 / Photonic Crystals / Spontaneous Emission Control / Spontaneous Emission Life Time / Spatial Phase Control Regions / Micromanipulation Technogoly / 有機金属化合物気相成長 / 窒化ガリウム / 窒化アルミニウムガリウム / 原料交互供給 / 不純物ドーピング / p型伝導 / 正孔密度 / 活性化エネルギー / III族窒化物半導体 / Mg-ドーピング / スーパーラティス / 有機金属気相成長法 / 紫外レーザー / 原子位置制御 / 原子層成長法 / 有機金属気相成長 / MOVPE / Gallium Nitride / Aluminum Gallium Nitride / Alternative source supply / Impurity doping / P-type conduction / Hole concentration / Activation energy / 深紫外半導体発光素子 / 2光束その場観測システム / 縦型深紫外発光素子 / ヘテロ非線形フォトニック結晶 / アンチサーファクタント / フラックス結晶成長法 / ボロン酸化物 / 温度変調結晶成長法 / 縦型深紫外LED / 良質AlGaN / 表面核生成機構 / 量子ドットAlInGaN / 非線型フォトニック結晶 / 高効率深紫外波長変換 / フラックス法 / p型ZnO / MOCVD / Al GaN / 深紫外線 / 結晶成長 / 縦型LED / 低転移化 / レーザーリフトオフ / 低転位化 / 深紫外 / 半導体発光デバイス / ナノテクノロジー / Al N / p型 / ドーピング / LED / ワイドバンドギャップ / deep UV LED / two light beam in-situ monitoring system / vertical type Deep UV LED / hetero nonlinear photonic crystal / anti-surfactant method / flax crystal growth technique / boron oxide material / temperature modulation technique / QCL / NEGF / Alloy disorder / Radom field / Dipole scattering / Self-energy / Random electric field / Interface roughness / Roughness-induced charge / Level broadening / GaN / GaAs / AlGaAs / UV-LED / 青～緑色LED / 非発光再結合 / 禁制帯内励起光 / 青色LED / 緑色LED / 紫外LED / 動作時の欠陥検出 / 高効率化 Less

  • Research Projects

    (16 results)

  • Research Products

    (1,032 results)

  • Co-Researchers

    (28 People)

  •  Searching new operation area for QCL by Gain Mapping using NEGF

    • Principal Investigator
      Yun Joosun
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Institute of Physical and Chemical Research

  •  Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition

    • Principal Investigator
      Kamata Norihiko
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Saitama University

  •  Research on novel light emitting devices using the unique properties generated by singularity of crystalPrincipal Investigator

    • Principal Investigator
      Hideki Hirayama
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Institute of Physical and Chemical Research

  •  Research on unexplored frequency quantum-cascade lasers using nitride semiconductorsPrincipal Investigator

    • Principal Investigator
      Hirayama Hideki
    • Project Period (FY)
      2015 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Crystal engineering
    • Research Institution
      Institute of Physical and Chemical Research

  •  Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substratesPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The Institute of Physical and Chemical Research

  •  Comprehensive multi-level spectroscopy of below-gap states without electrode

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University

  •  Research for Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The Institute of Physical and Chemical Research

  •  Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University

  •  Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The Institute of Physical and Chemical Research

  •  Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductorsPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The Institute of Physical and Chemical Research

  •  Development of deep UV light emitting devices using nano-technology and the application

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      2003 – 2007
    • Research Category
      Grant-in-Aid for Creative Scientific Research
    • Research Institution
      Ritsumeikan University
      Tokyo Institute of Technology

  •  Development of ultraviolet bright light-emitting diodes using quaternary InAlGaNPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      RIKEN

  •  Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applicationsPrincipal Investigator

    • Principal Investigator
      HIRAYAMA Hideki, 青柳 克信
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      RIKEN
      Tokyo Institute of Technology

  •  Study on Impurity Co-Doping by Atomic Positional Control

    • Principal Investigator
      IWAI Souhachi
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      RIKEN (The Institute of Physical & Chemical Research)

  •  紫外半導体レーザーの為の高輝度紫外発光III族窒素化物量子ドットに関する研究Principal Investigator

    • Principal Investigator
      平山 秀樹
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      The Institute of Physical and Chemical Research

  •  Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1998 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (B)
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of Technology
      The Institute of Physical and Chemical Research

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 Other

All Journal Article Presentation Book Patent

  • [Book] O plus E2021
    • Author(s)
      平山秀樹
    • Publisher
      アドコム・メディア株式会社
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] 特別WEBコラム2020
    • Author(s)
      永松謙太郎、安井武史、平山秀樹
    • Publisher
      応用物理学会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] 月刊OPTRONICS2020
    • Author(s)
      平山秀樹
    • Publisher
      オプトロニクス社
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] クリーンテクノロジー2019
    • Author(s)
      平山秀樹
    • Total Pages
      5
    • Publisher
      日本工業出版
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] Photonics Division2019
    • Author(s)
      平山秀樹
    • Total Pages
      6
    • Publisher
      応用物理学会フォトニクス分科会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] Recent Progress in AlGaN Deep-UV LEDs2018
    • Author(s)
      Hideki Hirayama
    • Publisher
      IntechOpen
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] SEMICONDUCTORS AND SEMIMETALS [III-Nitride Semiconductor Optoelectronics]2017
    • Author(s)
      H. Hirayama
    • Total Pages
      474
    • Publisher
      Elsevier
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] SEMICONDUCTORS AND SEMIMETALS [III-Nitride Semiconductor Optoelectronics]2017
    • Author(s)
      H. Hirayama
    • Total Pages
      474
    • Publisher
      Elsevier
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Book] オプトロニクス2017
    • Author(s)
      美濃卓哉、高野隆好、後藤浩嗣、植田充彦、椿健治、平山秀樹
    • Total Pages
      180
    • Publisher
      オプトロニクス社
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] 学術報告2016
    • Author(s)
      平山秀樹
    • Total Pages
      34
    • Publisher
      太陽紫外線防御研究委員会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] 信学技報2016
    • Author(s)
      大島一晟、定昌史、前田哲利、鎌田憲彦、平山秀樹
    • Total Pages
      111
    • Publisher
      電子情報通信学会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] 信学技報2016
    • Author(s)
      美濃卓哉，平山秀樹、高野隆好、後藤浩嗣、植田充彦、椿健治
    • Total Pages
      111
    • Publisher
      電子情報通信学会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Book] III-Nitride Ultraviolet Emitters -Technology and Applications-2015
    • Author(s)
      H. Hirayama
    • Publisher
      Springer Series in Material Science
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Book] 深紫外LED高効率化への新たな進展2014
    • Author(s)
      平山秀樹、前田哲利、藤川紗知恵、豊田史朗、鎌田憲彦
    • Total Pages
      9
    • Publisher
      オプトロニクス（OPTRONICS）
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Book] 深紫外LED高効率化への新たな進展2014
    • Author(s)
      平山秀樹
    • Total Pages
      2
    • Publisher
      オプトロニクス（OPTRONICS）
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Book] InterLab特集2014
    • Author(s)
      平山秀樹、前田哲利、藤川紗知恵、豊田史郎、金澤裕也、鎌田憲彦、椿健治、阪井淳、高野隆好、美濃卓哉、野口憲路
    • Total Pages
      7
    • Publisher
      株式会社オプトロニクス社
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Book] AlGaN系深紫外LEDの進展と今後の展望2013
    • Author(s)
      平山秀樹
    • Total Pages
      6
    • Publisher
      光産業技術振興協会
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Book] ワイドギャップ半導体2012
    • Author(s)
      平山秀樹
    • Total Pages
      8
    • Publisher
      近未来光エコデバイスへの展開―中赤外、テラヘルツへの広がり―
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Book] LED-UV硬化技術と硬化材料の現状と展望「220-350nm帯AlGaN系紫外LEDの進展と今後の展望2010
    • Author(s)
      平山秀樹
    • Publisher
      CMC出版(In press)
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] グリーンフォトニクス技術資料集-環境ビジネスと光技術-「230-350nm帯AlGaN系紫外高輝度LEDの進展と応用」2010
    • Author(s)
      平山秀樹
    • Total Pages
      9
    • Publisher
      オプトロニクス社
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 「近接場光のセンシング・イメージ技術への応用」第21章「殺菌・医療用途を目指した深紫外LED光源の開発」2010
    • Author(s)
      平山秀樹
    • Total Pages
      5
    • Publisher
      CMC出版
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 光技術コンタクト 48巻8号 特集「紫外光学系の動向」「AlGaN系深紫外LEDの進展と展望」2010
    • Author(s)
      平山秀樹
    • Total Pages
      5
    • Publisher
      日本オプトメカトロニクス協会
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] ファインセラミックスレポート Vol.28, No.4「AlGaN系深紫外LEDの進展」2010
    • Author(s)
      平山秀樹
    • Total Pages
      5
    • Publisher
      日本ファインセラミックス協会
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 理研環境報告書「深紫外光が導きだす新たなエコ・マーケット」-高品質の結晶を作る数多くのブレークスルーを実現-2009
    • Author(s)
      平山秀樹
    • Total Pages
      1
    • Publisher
      独立行政法理化学研究所
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] Display「220-280nm帯AlGaN系深紫外LEDの進展」2009
    • Author(s)
      平山秀樹
    • Total Pages
      10
    • Publisher
      (株)技術情報
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 光技術コンタクト vol.47, 通巻551, 10月号「最短波長領域・高効率深紫外LEDの開発」2009
    • Author(s)
      平山秀樹
    • Total Pages
      1
    • Publisher
      (社)日本オプトメカトロニクス協会
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] Modern Wide Bandgap Semiconductores and Related Optoelectronic Devices2007
    • Author(s)
      H.Hirayama et al.
    • Publisher
      Springer(印刷中)
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 平成18年度光技術動向調査(量子カスケードレーザによる中赤外、テラヘルツ波の発生)2007
    • Author(s)
      平山秀樹
    • Data Source
      KAKENHI-PROJECT-19206004

  • [Book] 平成18年度光技術動向調査2007
    • Author(s)
      平山秀樹 他
    • Publisher
      光産業技術振興協会(印刷中)
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] 科学立国日本を築く極限に挑む気鋭の研究者たち2006
    • Author(s)
      平山秀樹 他
    • Total Pages
      325
    • Publisher
      日刊工業新聞社
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] ワイドギャップ半導体光・電子デバイス2006
    • Author(s)
      平山秀樹 他
    • Total Pages
      421
    • Publisher
      森北出版(株)
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Book] LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
    • Author(s)
      H.Hirayama
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Book] LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
    • Author(s)
      H.Hirayama
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Book] LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
    • Author(s)
      平山 秀樹
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Book] Opt0elelectronic Devices : III-Nitrides, Chapter 11, Quaternary InAlGaN-based UV LEDs2004
    • Author(s)
      H.Hirayama
    • Publisher
      Elsevier
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Book] Optoelectric Devices : III-V Nitrides, Chapter 11, Quaternary InAlGaN-based UV-LEDs2004
    • Author(s)
      H.Hirayama
    • Total Pages
      575
    • Publisher
      Elsevier
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Book] Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004
    • Author(s)
      H.Hirayama
    • Publisher
      Elsevier
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Book] Opt0electronic Devices : III-Nitrides, Chapter 11, Quaternary InAlGaN-based UV LEDs2004
    • Author(s)
      H.Hirayama
    • Publisher
      Elsevier
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Demonstration of High Light-Extraction Efficiency of Double-Metal Surface-Emitting Terahertz Quantum Cascade Laser with High Active Region Occupancy by Adopting Uniform Triangular Prism Photonic Crystal2021
    • Author(s)
      Joosun Yun, Tsung-Tse Lin, and Hideki Hirayama
    • Journal Title

      Journal of Lightwave Technology

      Volume: submitted

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Journal Article] Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters2020
    • Author(s)
      Khan M Ajmal、Bermundo Juan Paolo、Ishikawa Yasuaki、Ikenoue Hiroshi、Fujikawa Sachie、Matsuura Eriko、Kashima Yukio、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
    • Journal Title

      Nanotechnology

      Volume: 32 Pages: 055702-055702

    • DOI

      10.1088/1361-6528/abbddb

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs2020
    • Author(s)
      Khan M. Ajmal、Itokazu Yuri、Maeda Noritoshi、Jo Masafumi、Yamada Yoichi、Hirayama Hideki
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 2 Pages: 1892-1907

    • DOI

      10.1021/acsaelm.0c00172

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428

  • [Journal Article] Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED2020
    • Author(s)
      Khan M. Ajmal、Takeda Ryohei、Yamada Yoichi、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
    • Journal Title

      Optics Letters

      Volume: 45 Pages: 495-495

    • DOI

      10.1364/ol.376894

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06428, KAKENHI-PLANNED-16H06420

  • [Journal Article] Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells2020
    • Author(s)
      Murotani Hideaki、Miyoshi Hiroyuki、Takeda Ryohei、Nakao Hiroki、Ajmal Khan M.、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
    • Journal Title

      Journal of Applied Physics

      Volume: 128 Pages: 105704-105704

    • DOI

      10.1063/5.0015554

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428

  • [Journal Article] Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light2020
    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, and Hideki Hirayama
    • Journal Title

      Optical Materials

      Volume: 105

    • DOI

      10.1016/j.optmat.2020.109878

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Journal Article] High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells2020
    • Author(s)
      Murotani Hideaki、Tanabe Ryohei、Hisanaga Keisuke、Hamada Akira、Beppu Kanta、Maeda Noritoshi、Khan M. Ajmal、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
    • Journal Title

      Applied Physics Letters

      Volume: 117 Pages: 162106-162106

    • DOI

      10.1063/5.0027697

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428

  • [Journal Article] Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light2020
    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
    • Journal Title

      AIP Advances

      Volume: 10

    • DOI

      10.1063/1.5134698

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Journal Article] Nonradiative recombination centers in deep UV-wavelength AIGaN quantum wells detected by below-gap excitation light2019
    • Author(s)
      Hossain M. Ismail、Itokazu Yuri、Kuwaba Shunsuke、Kamata Norihiko、Maeda Noritoshi、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCB37-SCCB37

    • DOI

      10.7567/1347-4065/ab1069

    • NAID

      210000156272

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-18K04954

  • [Journal Article] Parasitic transport paths in two-well scattering-assisted terahertz quantum cascade lasers2019
    • Author(s)
      Li Wang, Tsung-Tse Lin, Ke Wang, and Hideki Hirayama
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 8 Pages: 082003-082003

    • DOI

      10.7567/1882-0786/ab2b56

    • NAID

      210000156656

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes2019
    • Author(s)
      Itokazu Yuri、Kuwaba Shunsuke、Jo Masafumi、Kamata Norihiko、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SC1056-SC1056

    • DOI

      10.7567/1347-4065/ab1126

    • NAID

      210000156252

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs2019
    • Author(s)
      Ajmal Khan Muhammad、Matsuura Eriko、Kashima Yukio、Hirayama Hideki
    • Journal Title

      physica status solidi (a)

      Volume: 216 Pages: 1970059-1970059

    • DOI

      10.1002/pssa.201970059

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Controlled crystal orientations of semipolar AlN grown on an <i>m</i>-plane sapphire by MOCVD2019
    • Author(s)
      Jo Masafumi、Itokazu Yuri、Kuwaba Shunsuke、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SC1031-SC1031

    • DOI

      10.7567/1347-4065/ab0f1c

    • NAID

      210000156090

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures2019
    • Author(s)
      Li Wang, Tsung-Tse Lin, Ke Wang, Thomas Grange, Stefan Birner, and Hideki Hirayama
    • Journal Title

      Scientific Reports

      Volume: 9 Pages: 1-7

    • DOI

      10.1038/s41598-019-45957-8

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] 13 mW operation of a 295-310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications2019
    • Author(s)
      Khan M. Ajmal、Maeda Noritoshi、Jo Masafumi、Akamatsu Yuki、Tanabe Ryohei、Yamada Yoichi、Hirayama Hideki
    • Journal Title

      Journal of Materials Chemistry C

      Volume: 7 Pages: 143-152

    • DOI

      10.1039/c8tc03825b

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428

  • [Journal Article] Random electric field induced by interface roughness in GaN/AlxGa1?xN multiple quantum wells2019
    • Author(s)
      Joosun Yun, Dong-Pyo Han, and Hideki Hirayama
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 12 Pages: 124005-124005

    • DOI

      10.7567/1882-0786/ab548a

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing2019
    • Author(s)
      Mogami Yosuke、Motegi Shogo、Osawa Atsushi、Osaki Kazuto、Tanioka Yukitake、Maeoka Atsushi、Jo Masafumi、Maeda Noritoshi、Yaguchi Hiroyuki、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SC1029-SC1029

    • DOI

      10.7567/1347-4065/ab1066

    • NAID

      210000156092

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode2019
    • Author(s)
      Khan M. Ajmal、Matsuura Eriko、Kashima Yukio、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 59 Issue: SA Pages: SAAD01-SAAD01

    • DOI

      10.7567/1347-4065/ab460b

    • NAID

      210000157156

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD2019
    • Author(s)
      Fujikawa Sachie、Ishiguro Toshiya、Wang Ke、Terashima Wataru、Fujishiro Hiroki、Hirayama Hideki
    • Journal Title

      Journal of Crystal Growth

      Volume: 510 Pages: 47-49

    • DOI

      10.1016/j.jcrysgro.2018.12.027

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K14113, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates2019
    • Author(s)
      Matsumoto Takuma、Ajmal Khan M、Maeda Noritoshi、Fujikawa Sachie、Kamata Norihiko、Hirayama Hideki
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 52 Pages: 115102-115102

    • DOI

      10.1088/1361-6463/aaf60a

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] AlGaN深紫外LDの実現へ向けた最近の進展2019
    • Author(s)
      平山秀樹、前田哲利、M. Ajmal Khan、只友一行、岡田成仁、山田陽一
    • Journal Title

      レーザー研究

      Volume: 47 Pages: 196-203

    • NAID

      130008074017

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] High output power THz quantum cascade lasers and their temperature dependent performance2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang, and H. Hirayama
    • Journal Title

      Journal of Infrared and Millimeter Waves

      Volume: 37 Pages: 513-522

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state2018
    • Author(s)
      Lin Tsung-Tse、Wang Li、Wang Ke、Grange Thomas、Hirayama Hideki
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 11 Pages: 112702-112702

    • DOI

      10.7567/apex.11.112702

    • NAID

      210000136397

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113

  • [Journal Article] Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector2018
    • Author(s)
      Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
    • Journal Title

      physica status solidi (a)

      Volume: 215 Pages: 1700436-1700436

    • DOI

      10.1002/pssa.201700436

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Effects of Ga Supply on the Growth of (11-22) AlN on m-Plane (10-10) Sapphire Substrates2018
    • Author(s)
      Jo Masafumi、Hirayama Hideki
    • Journal Title

      physica status solidi (b)

      Volume: 255 Pages: 1700418-1700418

    • DOI

      10.1002/pssb.201700418

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes2018
    • Author(s)
      Maeda Noritoshi、Yun Joosun、Jo Masafumi、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4S Pages: 04FH08-04FH08

    • DOI

      10.7567/jjap.57.04fh08

    • NAID

      210000148946

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
    • Author(s)
      Wang Ke、Grange Thomas、Lin Tsung-Tse、Wang Li、Jehn Zoltan、Birner Stefan、Yun Joosun、Terashima Wataru、Hirayama Hideki
    • Journal Title

      Applied Physics Letters

      Volume: 113 Pages: 061109-061109

    • DOI

      10.1063/1.5029520

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251, KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982

  • [Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018
    • Author(s)
      Wang Ke、Lin Tsung-Tse、Wang Li、Terashima Wataru、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 8 Pages: 081001-081001

    • DOI

      10.7567/jjap.57.081001

    • NAID

      210000149405

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982

  • [Journal Article] Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire2018
    • Author(s)
      Jo Masafumi、Morishita Naoki、Okada Narihito、Itokazu Yuri、Kamata Norihiko、Tadatomo Kazuyuki、Hirayama Hideki
    • Journal Title

      AIP Advances

      Volume: 8 Pages: 105312-105312

    • DOI

      10.1063/1.5052294

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] 殺菌用・深紫外LEDの進展2018
    • Author(s)
      平山秀樹
    • Journal Title

      月刊バイオインダストリー

      Volume: 35 Pages: 63-70

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes2018
    • Author(s)
      Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
    • Journal Title

      physica status solidi (a)

      Volume: 215 Pages: 1700435-1700435

    • DOI

      10.1002/pssa.201700435

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] 殺菌用・深紫外LEDの進展2018
    • Author(s)
      平山秀樹
    • Journal Title

      ファインセラミックスレポート

      Volume: 36 Pages: 118-121

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes2018
    • Author(s)
      Yun Joosun、Kashima Yukio、Hirayama Hideki
    • Journal Title

      AIP Advances

      Volume: 8 Pages: 125126-125126

    • DOI

      10.1063/1.5062603

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency2017
    • Author(s)
      T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki and H. Hirayama
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 3 Pages: 031002-031002

    • DOI

      10.7567/apex.10.031002

    • NAID

      210000135778

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] High-quality AlN template grown on a patterned Si(111) substrate2017
    • Author(s)
      B. T. Tran, H. Hirayama, M. Jo, N. Maeda, D. Inoue, T. Kikitsu
    • Journal Title

      Journal of Crystal Growth

      Volume: - Pages: 225-229

    • DOI

      10.1016/j.jcrysgro.2016.12.100

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate2017
    • Author(s)
      Tran Binh Tinh、Hirayama Hideki
    • Journal Title

      Scientific Reports

      Volume: 7 Pages: 12176-12176

    • DOI

      10.1038/s41598-017-11757-1

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7?THz2017
    • Author(s)
      Lin Tsung-Tse、Hirayama Hideki
    • Journal Title

      physica status solidi (a)

      Volume: 215 Pages: 1700424-1700424

    • DOI

      10.1002/pssa.201700424

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-15K13982

  • [Journal Article] Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Journal Title

      International Journal of Materials Science and Applications

      Volume: 6 Pages: 230-230

    • DOI

      10.11648/j.ijmsa.20170605.11

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer2017
    • Author(s)
      Kashima Yukio、Maeda Noritoshi、Matsuura Eriko、Jo Masafumi、Iwai Takeshi、Morita Toshiro、Kokubo Mitsunori、Tashiro Takaharu、Kamimura Ryuichiro、Osada Yamato、Takagi Hideki、Hirayama Hideki
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 1 Pages: 012101-012101

    • DOI

      10.7567/apex.11.012101

    • NAID

      210000136062

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes2017
    • Author(s)
      Hirayama Hideki、Kamata Norihiko、Tsubaki Kenji
    • Journal Title

      III-Nitride Based Light Emitting Diodes and Applications

      Volume: 133 Pages: 267-299

    • DOI

      10.1007/978-981-10-3755-9_10

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer2017
    • Author(s)
      J. Yun and H. Hirayama
    • Journal Title

      J. Appl. Phys.

      Volume: 121

    • DOI

      10.1063/1.4973493

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Structural and electrical properties of semipolar (11-22) AlGaN grown on m -plane (1-100) sapphire substrates2017
    • Author(s)
      Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata and Hideki Hirayama
    • Journal Title

      Phys. Status Solidi (c)

      Volume: -

    • DOI

      10.1002/pssc.201600248

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes2017
    • Author(s)
      Hirayama H.
    • Journal Title

      Semiconductors and Semimetals

      Volume: 96 Pages: 85-120

    • DOI

      10.1016/bs.semsem.2016.11.002

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] AlGaN紫外LEDの進展と展望2016
    • Author(s)
      平山秀樹
    • Journal Title

      照明学会誌

      Volume: 100 Pages: 115-118

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Journal Article] Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications2016
    • Author(s)
      B. T. Tran, N. Maeda, N. Jo, D. Inoue, T. Kikitsu and H. Hirayama
    • Journal Title

      Scientific Report

      Volume: 6 Pages: 35681-35681

    • DOI

      10.1038/srep35681

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733

  • [Journal Article] テラヘルツ量子カスケードレーザーの進展2016
    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究

      Volume: 44 Pages: 520-526

    • NAID

      130007957296

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Journal Article] テラヘルツ量子カスケードレーザーの進展2016
    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究

      Volume: 44 Pages: 520-526

    • NAID

      130007957296

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Journal Article] Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer2016
    • Author(s)
      M. Jo, N. Maeda and H. Hirayama
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 1 Pages: 012102-012102

    • DOI

      10.7567/apex.9.012102

    • NAID

      210000137743

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Journal Article] Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence2015
    • Author(s)
      N. Kamata, A. Z. M. Touhidul Islam, M. Julkarnain, N. Murakoshi, T. Fukuda, and H. Hirayama
    • Journal Title

      Phys. Status Solidi B

      Volume: 252 Pages: 936-939

    • DOI

      10.1002/pssb.201451582

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360005, KAKENHI-PROJECT-25600087

  • [Journal Article] Growth of non-polar<i>a</i>-plane AlN on<i>r</i>-plane sapphire2015
    • Author(s)
      M. Jo and H. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 5S Pages: 05FA02-05FA02

    • DOI

      10.7567/jjap.55.05fa02

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Journal Article] Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation2015
    • Author(s)
      J. Yun, J. I. Shim, H. Hirayama
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 2 Pages: 022104-022104

    • DOI

      10.7567/apex.8.022104

    • NAID

      210000137382

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] テラヘルツ量子カスケードレーザーの進展と今後の展望2015
    • Author(s)
      平山秀樹，寺嶋亘，林宗澤，佐々木美穂
    • Journal Title

      応用物理

      Volume: 84 Pages: 918-923

    • NAID

      10031104445

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Journal Article] Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate2015
    • Author(s)
      B. T. Tran, H. Hirayama, N. Maeda, M. Jo, S. Toyoda and N. Kamata
    • Journal Title

      Scientific Report, Nature

      Volume: 5 Pages: 14734-14734

    • DOI

      10.1038/srep14734

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-25600087

  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep-UV region2014
    • Author(s)
      A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
    • Journal Title

      physica status solidi (c)

      Volume: 11 Pages: 832-835

    • DOI

      10.1002/pssc.201300405

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014
    • Author(s)
      A. Z. M. Touhidul Islam, Naoki Murakoshi, Takeshi Fukuda, Hideki Hirayama, and Norihiko Kamata
    • Journal Title

      Phys. Status Soldi C

      Volume: 11 Pages: 832-835

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] 化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術2014
    • Author(s)
      鹿嶋行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、藤川紗千恵、平山秀樹
    • Journal Title

      信学技報

      Volume: 114 Pages: 27-32

    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014
    • Author(s)
      59) A.Z.M.Touhidul Islam,N.Murakoshi,T.Fukuda, H.Hirayama,and N.Kamata
    • Journal Title

      Phys.Status.Solidi C

      Volume: C 11 Pages: 832-835

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes2014
    • Author(s)
      H. Hirayama, N. Maeda, S. Fujikawa, S. Toyota and N. Kamata
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 10 Pages: 100209-100209

    • DOI

      10.7567/jjap.53.100209

    • NAID

      210000144519

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] 高Al組成p型AlGaNコンタクト層を用いた260nm深紫外LED2014
    • Author(s)
      定昌史、前田哲利、平山秀樹
    • Journal Title

      信学技報

      Volume: 114 Pages: 77-80

    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] 素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化2014
    • Author(s)
      平山秀樹、前田哲利、藤川紗知恵、豊田史郎、鎌田憲彦
    • Journal Title

      OPTRONICS

      Volume: 386 Pages: 58-66

    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] MOCVDを用いたGaN/ALGaNテラヘルツ量子カスケードレーザー（THz-QCL）の作製と7THz発振動作2014
    • Author(s)
      豊田史朗,　寺嶋亘,　鎌田憲彦,　平山秀樹
    • Journal Title

      電子情報通信学会, 信学技報

      Volume: ED2014-84 Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] 超格子p型AlGaNホール拡散層を用いた深紫外LEDの動作2014
    • Author(s)
      前田哲利、定昌史、平山秀樹
    • Journal Title

      信学技報

      Volume: 114 Pages: 73-76

    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] ウェットエッチングによるサファイア表面加工基板(PSS)を用いた深紫外LED用高品質AlNテンプレートの作製2014
    • Author(s)
      金沢裕也、豊田史朗、大島一晟、鎌田憲彦、鹿島行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、平山秀樹
    • Journal Title

      信学技報

      Volume: 114 Pages: 39-44

    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer2014
    • Author(s)
      N. Maeda and H. Hirayama
    • Journal Title

      Phys. Status Solidi C

      Volume: No. 11 Pages: 1521-1524

    • NAID

      110009887994

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] AlGaN系率紫外LEDの進展2013
    • Author(s)
      平山秀樹、藤川紗知恵、鎌田憲彦
    • Journal Title

      電気学会論文誌C

      Volume: Vol. 133 Pages: 1443-1448

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] AlGaN系率紫外LEDの進展2013
    • Author(s)
      平山秀樹、藤川紗知恵、鎌田憲彦
    • Journal Title

      電気学会論文誌　C

      Volume: 133 Pages: 1-3

    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] AlGaN深紫外LEDの高効率化への取り組み2012
    • Author(s)
      富田優志、藤川紗千恵、水澤克哉、豊田史朗、鎌田憲彦、平山秀樹
    • Journal Title

      信学技報

      Volume: 112 Pages: 87-92

    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2012
    • Author(s)
      S. Fujikawa, H. Hirayama and N. Maeda
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 790-793

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate2012
    • Author(s)
      N. Maeda, H. Hirayama and S. Fujikawa
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 810-813

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Characteristics of epitaxial lateral overgrowth AlN templates on (111) Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns2012
    • Author(s)
      T. Mino, H. Hirayama, T. Takano, K. Tsubaki and M. Sugiyama
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 802-805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode2012
    • Author(s)
      M. Akiba, H. Hirayama, Y. Tomita, Y. Tsukada, N. Maeda, and A. Kamata
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 806-809

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005

  • [Journal Article] Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system2012
    • Author(s)
      T. Mino, H. Hirayama, T. Takano, N. Noguchi and K. Tsubaki
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 749-752

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode2012
    • Author(s)
      M. Akiba, H. Hirayama, Y. Tomita, Y. Tsukada, N. Maeda and A. Kamata
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 806-809

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Journal Article] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate2011
    • Author(s)
      Wataru Terashima, H.Hirayama
    • Journal Title

      Phys.Status Solidi

      Volume: (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate2011
    • Author(s)
      W. Terashima and H. Hirayama
    • Journal Title

      Phys. Status Solidi C

      Volume: Vol.8 Pages: 2302-2304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers2011
    • Author(s)
      T. T. Lin, L. Ying and H. Hirayama
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.5 Pages: 12101-12101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers2011
    • Author(s)
      T.T.Lin, L.Ying, H.Hirayama
    • Journal Title

      Appl.Phys.Express

      Volume: Vol.5 Pages: 12101-12101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] Development of terahertz quantum cascade laser based on III-nitride semiconductors2011
    • Author(s)
      W. Terashima and H. Hirayama
    • Journal Title

      The Review of Laser Engineering

      Volume: Vol.39, No.10 Pages: 769-774

    • NAID

      10029790290

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] Molwcular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
    • Author(s)
      Wataru Terashima, H.Hirayama
    • Journal Title

      Phys.Status, Solidi A

      Volume: (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] AlGaN系深紫外LEDの進展と展望2011
    • Author(s)
      平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦
    • Journal Title

      応用物理

      Volume: 80(Invited Review) Pages: 319-324

    • NAID

      10027969857

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
    • Author(s)
      W. Terashima and H. Hirayama
    • Journal Title

      Phys. Status Solidi A

      Volume: Vol.1 Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] AlGaN系深紫外LEDの進展と展望(Invited Review)2011
    • Author(s)
      平山秀樹, 藤川紗千恵, 塚田悠介, 鎌田憲彦
    • Journal Title

      応用物理

      Volume: Vol.80, No.4 Pages: 319-324

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
    • Author(s)
      W.Terashima, H.Hirayama
    • Journal Title

      Phys.Status Solidi A

      Volume: 1 Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum WelLight-Emitting Diode with Vertical Emission Properties2010
    • Author(s)
      平山秀樹, N.Noguchi, 鎌田憲彦
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 32102-32102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN LEDs by Using a Multiquantum-Barrier Electron Blocking Layer2010
    • Author(s)
      H. Hirayama, Y. Tsukada, T. Maeda, N. Kamata
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010
    • Author(s)
      H.Hirayama, Y.Tsukada, T.Maeda, N.Kamata
    • Journal Title

      Appl.Phys.Express 3

      Pages: 31002-31002

    • NAID

      10027013818

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 深紫外域AlGaN-LEDの高品質化2010
    • Author(s)
      鎌田憲彦, 乗松潤, 塚田悠介, 秋葉雅弘, 福田武司, 平山秀樹
    • Journal Title

      Proc.Human Photonics Forum

      Pages: 22-27

    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] 222nm Deep-Ultraviolet AlGaN QW Light-Emitting Diode with Vertical Emission Properties2010
    • Author(s)
      H. Hirayama, N. Noguchi, N. Kamata
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価2010
    • Author(s)
      五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告(EID2010-31)

      Volume: Vol.110,No.404 Pages: 41-44

    • NAID

      10027800136

    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010
    • Author(s)
      平山秀樹, 塚田悠介, T.Maeda, 鎌田憲彦
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 31002-31002

    • NAID

      10027013818

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Marked Enhancement in the efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquatum-Barrier Electron Blocking Layer2010
    • Author(s)
      H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
    • Journal Title

      Appl.Phys.Express.3,031002 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy2010
    • Author(s)
      W. Terashima and H. Hirayama
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.3

    • NAID

      10027618617

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties2010
    • Author(s)
      H.Hirayama, N.Noguchi, N.Kamata
    • Journal Title

      Appl.Phys Express (in press)

    • NAID

      10027013951

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs2010
    • Author(s)
      平山秀樹, S.Fujikawa, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
    • Journal Title

      Phys.Stat.Sol.(c) (in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy2010
    • Author(s)
      W.Terashima, H.Hirayama
    • Journal Title

      Appl.Phys.Express

      Volume: 3

    • NAID

      10027618617

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] AlGaN系殺菌用途紫外LEDの進展と今後の展望2010
    • Author(s)
      平山秀樹
    • Journal Title

      表面技術、特集「LED照明と表面技術」

      Volume: 61巻9号 Pages: 637-640

    • NAID

      10026629249

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN Terahertz quatum cascade structure by radio frequency molecular beam epitaxy2010
    • Author(s)
      Wataru Terashima, H.Hirayama
    • Journal Title

      Appl.Phys.Express

      Volume: 3 Pages: 125501-125501

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Fabrication of Low Threading Dislocation Density ELO-AlN Template for Application to Deep-UV LEDs2009
    • Author(s)
      H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Phys. Stat. Sol.(c)

      Volume: 6, Issue S2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layer2009
    • Author(s)
      N.Noguchi, 平山秀樹, T.Yatabe, 鎌田憲彦
    • Journal Title

      Phys.Stat.Sol.(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
    • Author(s)
      W.Terashima, H.Hirayama
    • Journal Title

      Physica Status Solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] 222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009
    • Author(s)
      平山秀樹, S.Fujikawa, N.Noguchi, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
    • Journal Title

      Physica Status Solidi A 206

      Pages: 1176-1182

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
    • Author(s)
      W. Terashima, H. Hirayama
    • Journal Title

      Physica Status Solidi (c) 6(S2)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206004

  • [Journal Article] Fabrication of low threading dislocation density ELO-AIN template for the application to deep-UV LEDs2009
    • Author(s)
      H.Hirayama, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
    • Journal Title

      Physica Status Solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
    • Author(s)
      W. Terashima and H. Hirayama
    • Journal Title

      Phys. Status Solidi C

      Volume: Vol.6 Pages: 614-617

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] 222nm single-peaked deep-UV LEDE with thin AlGaN quantum well layers2009
    • Author(s)
      N.Noguchi, H.Hirayama, T.Yatabe, N.Kamata
    • Journal Title

      Physica Status Solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire2009
    • Author(s)
      H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
    • Journal Title

      Physica Status Solidi(a) 206

      Pages: 1176-1182

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
    • Author(s)
      W. Terashima, H. Hirayama
    • Journal Title

      Physica Status Solidi(c)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206004

  • [Journal Article] 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009
    • Author(s)
      H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Physica Status Solidi (a)

      Volume: 206 Pages: 1176-1182

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AIN template2009
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Proceedings of SPIE 7216

      Pages: 7216-58

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Realization of 280nm band AlGaN based UV-LED on large area AlN template with high crystalline quality2009
    • Author(s)
      T.Takano, S.Fujikawa, K.Tsubaki, H.Hirayama
    • Journal Title

      Physica Status Solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire2009
    • Author(s)
      H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.Kamata
    • Journal Title

      Physica Status Solidi (a) 206

      Pages: 1176-1182

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV-LEDs fabricated on high-quality AlN template2009
    • Author(s)
      H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu K.Kamata, T.Takano, K.Tsubaki
    • Journal Title

      SPIE

      Pages: 7216-58

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Extremely high efficiency 280nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers2009
    • Author(s)
      S.Fujikawa, H.Hirayama, T.Takano, K.Tsubaki
    • Journal Title

      Physica Status Solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Fabrication of low threading dislocation density ELO-AlN template for application to deep-UV LEDs2009
    • Author(s)
      H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Phys. Stat. Sol.(c)

      Volume: Vol.6, Issue S2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] Milliwatt power 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template2009
    • Author(s)
      H.Hirayama, J.Norimatsu, N.Noguchi, S.Fujikawa, T.Takano, K.Tsubaki, N.Kamata
    • Journal Title

      Physica Status Solidi(c) 5

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 280nm帯高出力紫外LED2009
    • Author(s)
      平山 秀樹
    • Journal Title

      月刊ディスプレー 2月号

      Pages: 33-42

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] ELO-AlN テンプレート上に作製した270nm帯 AlGaN 紫外LED2008
    • Author(s)
      平山 秀樹, 他6名
    • Journal Title

      電子情報通信学会技術報告 168

      Pages: 77-82

    • NAID

      110007127194

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Remarkable enhancement of 254-280nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AIN buffer on sapphire2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2283-2285

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Recent progresses of 220-270nm AlGaN-based deep-UV LEDs2008
    • Author(s)
      H. Hirayama
    • Journal Title

      J. Illum. Engng. Inst. Jpn. 92

      Pages: 311-315

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Realization of 340nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2260-2262

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire2008
    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2969-2969

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
    • Author(s)
      H. Hirayama
    • Journal Title

      Phys. Stat. Solidi QDQ0760

      Pages: 1-10

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
    • Author(s)
      H. Hirayama
    • Journal Title

      Physica Status Solidi(a) (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] Ag-metal bonding condition for low-loss double-metal waveguide (DMW) of THz-quantum cascade laser2008
    • Author(s)
      L Ying, N. Horiuchi, H. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 7926-7928

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206004

  • [Journal Article] Realization of 340-nm-band high-output-power (7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Jap. J. Appl. Phys. 47

      Pages: 2941-2944

    • NAID

      210000064629

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335nm fabricated by an anti-surfactant method2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2312-2314

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Realization of 340nm-band high-power UV-LED using p-type InAlGaN2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Journal of light and Visual Environment 32

      Pages: 83-37

    • NAID

      110006663890

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 27-261nm AlGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffers on sapphire2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Journal of Light and Visual Environment 32

      Pages: 79-82

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 230nm帯AlGaN紫外LEDの高出力化2008
    • Author(s)
      平山 秀樹, 他3名
    • Journal Title

      電子情報通信学会技術報告 167

      Pages: 71-76

    • NAID

      110007127195

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 227nm AlGaN light-emitting diode with 0.15mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Appl. Phys. Express 1

    • NAID

      10025080177

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Improvement of surface roughness and reduction of threading-dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 1968-1970

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Remarkable improvement of output power for InAlGaN based ultraviolet LED by improving the crystal quality of AlN/AlGaN templates2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2102-2104

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire2008
    • Author(s)
      H. Hirayama, T. Yatabe, T. Ohashi and N. Kamata
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2283-2283

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 226-273nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2969-2971

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
    • Author(s)
      H.Hirayama
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 2312-2315

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] 230-270nm深紫外AlGaN系LEDの進展2008
    • Author(s)
      平山 秀樹, 他3名
    • Journal Title

      電気学会論文誌 C 128

      Pages: 748-756

    • NAID

      10021132357

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Development of 220-270nm AlGaN-based deep UV-LEDs2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Electrical Engineering of Japan 128

      Pages: 748-757

    • NAID

      110006684469

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
    • Author(s)
      H. Hirayama, N. Noguchi, T. Yatabe and N. Kamata
    • Journal Title

      Appl. Phys. Express 1

      Pages: 51101-51101

    • NAID

      10025080177

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 340nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers2008
    • Author(s)
      H. Hirayama, et al,
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 2280-2282

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
    • Author(s)
      H.Hirayama, N.Noguchi, T.Yatabe, N.Kamata
    • Journal Title

      Appl.Phys.Express 1

      Pages: 51101-51101

    • NAID

      10025080177

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 280nm帯 InAlGaN 高出力紫外 LED2008
    • Author(s)
      平山 秀樹, 他3名
    • Journal Title

      電子情報通信学会技術報告 169

      Pages: 83-88

    • NAID

      110007127193

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Ag-metal bonding condition for low-loss double-metal waveguide of terahertz quantum cascade laser2008
    • Author(s)
      L Ying, N. Horiuchi, H. Hirayama
    • Journal Title

      Jap. J. Appl. Phys 47(10)

      Pages: 7926-7928

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206004

  • [Journal Article] 「p-InALGaNと高品質AINを用いた340nm帯高出力LED」2007
    • Author(s)
      藤川 紗千恵、高野隆好、近藤行廣、平山秀樹
    • Journal Title

      電子情報通信学会技術研究報告 107

      Pages: 29-34

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire2007
    • Author(s)
      H.Hirayama, T.Yatabe, N.Noguchi, T.Ohashi, N.Kamata
    • Journal Title

      Appl.Phys.Lett. 91

      Pages: 71901-71901

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] "231-261nm AIGaN deep-ultraviolet light-emitting diodes fabri cated on AIN multilayer buffers grown by ammonia pulse-flow method on sapphire"2007
    • Author(s)
      H. Hirayama
    • Journal Title

      Appl. Phys. Lett. 91

      Pages: 0719011-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
    • Author(s)
      平山秀樹
    • Journal Title

      電気学会、光・量子デバイス研究会資料 OQD-07-60

      Pages: 1-10

    • NAID

      10025660536

    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire2007
    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
    • Journal Title

      Appl. Phys. Lett 91

      Pages: 71901-71901

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
    • Author(s)
      平山秀樹
    • Journal Title

      電気学会、光・量子デバイス研究会資料 OQD-07-60

      Pages: 1-10

    • NAID

      10025660536

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] "250-350nm帯AlGaN系深紫外高輝度LEDの開発"2007
    • Author(s)
      平山秀樹、高野隆義、藤川紗千恵、大橋智昭、谷田部透、鎌田憲彦、近藤行廣、
    • Journal Title

      O plus E Vol.29

      Pages: 572-581

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 深紫外半導体発光素子及びTHz量子カスケードレーザの開発2007
    • Author(s)
      平山 秀樹
    • Journal Title

      電気学会、光・量子デバイス研究会資料 OQD-07-60

      Pages: 1-10

    • Data Source
      KAKENHI-PROJECT-19206004

  • [Journal Article] "230-350nm帯AIGaN系深紫外高輝度LEDの進展と応用"2007
    • Author(s)
      平山秀樹
    • Journal Title

      オプトロニクス(OPTROMICS) 200710月号

      Pages: 110-119

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] Influence of residual oxygen impurity in quaternary InAlGaN multiple quantum well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates2006
    • Author(s)
      T.Kyono, H.Hirayama et al.
    • Journal Title

      J. Appl. Phys 99・11

      Pages: 1145091-7

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] High-efficiency UV-LEDs using quaternary InAlGaN2006
    • Author(s)
      H.Hirayama et al.
    • Journal Title

      Electrical Engineering in Japan 157・3

      Pages: 225-232

    • NAID

      210000174185

    • Data Source
      KAKENHI-PLANNED-18069014

  • [Journal Article] 'LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
    • Author(s)
      平山 秀樹
    • Journal Title

      情報機構

      Pages: 91-104

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] 窒化物4元混晶を用いた高効率紫外LED2005
    • Author(s)
      平山秀樹
    • Journal Title

      電気学会論文誌C 125

      Pages: 160-168

    • NAID

      10014301981

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005
    • Author(s)
      T.Kyono, H.Hirayama, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys. Stat. Sol.(c) 2, 7

      Pages: 2912-2915

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(c) 2

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(c) 2, 7

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(c) 2

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
    • Author(s)
      H.Hirayama
    • Journal Title

      J. Appl. Phys. 97

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005
    • Author(s)
      T.Kyono, H.Hirayama, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(c) 2, 7

      Pages: 2912-2915

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
    • Author(s)
      H.Hirayama
    • Journal Title

      J.Appl.Phys. 97

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
    • Author(s)
      H.Hirayama
    • Journal Title

      J.Appl.Phys. 97

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 350 rm-band quaternary InAIGaN- based UV LED on GaN/sapphire template2005
    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys. Stat. Sol.(c) 2, 7

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emittingdiodes2005
    • Author(s)
      H.Hirayama
    • Journal Title

      J.Appl.Phys. 97

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] High-Efficiency UV-LEDs using Quaternary InAlGaN2005
    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      IEEJ, Trans.EIS vol.125, no.2

      Pages: 160-168

    • NAID

      210000174185

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] 窒化物4元混晶を用いた高効率紫外LED2005
    • Author(s)
      平山秀樹
    • Journal Title

      電気学会論文誌C 125

      Pages: 160-168

    • NAID

      10014301981

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
    • Author(s)
      H.Hirayama
    • Journal Title

      J. App1. Phys. 97

    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] High- Efficiency UV-LEDs using Quaternary InAlGaN2005
    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      IEEJ, Trans. EIS vol.125, no.2

      Pages: 160-168

    • NAID

      210000174185

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004
    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
    • Author(s)
      平山 秀樹
    • Journal Title

      レーザー研究(「短波長LED・LD、紫外のLED」特集号) 32

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Jpn.J.Appl.Phys. 43, 12

      Pages: 8030-8031

    • NAID

      10014215834

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grwon on GaN substrates2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Jpn.J.Appl.Phys 43

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究 32

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 'Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004
    • Author(s)
      H.Hirayama
    • Journal Title

      Elsevier

      Pages: 285-322

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura
    • Journal Title

      Phys. Stat. Sol.(a) 201, 12

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Effects of GaN Substrate in Ultraviolet Light-Emitting Diodes2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      SEI Technical Review Vol.165

      Pages: 75-80

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15GS0207

  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaNUV-LEDs over GaN Substrate2004
    • Author(s)
      H.Hirayama et al.
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2639-2643

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Effects of GaN Substrates on InA1GaN Quaternary UV LEDs2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Phys. Stat. Sol.(a) 201, 12

      Pages: 2624-2627

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 352nm Quaternary InAlGaN-based High-efficiency Ultraviolet Light-emitting Diodes Grown on GaN Substrates2004
    • Author(s)
      H.Hirayama et al.
    • Journal Title

      Jpn.J.Appl.Phys. 43, 10A

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5539

      Pages: 422-433

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGAN2004
    • Author(s)
      H.Hirayama et al.
    • Journal Title

      Proc.SPIE.Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004
    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Growth and Annealing Condition of high Al content p-type AlGaN for deep UV-LEDs2004
    • Author(s)
      T.Obata, H.Hirayama et al.
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2803-2807

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet- light- emitting diodes2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Jpn. J. Appl. Phys. 43, 12

      Pages: 8030-8031

    • NAID

      10014215834

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Jpn.J.Appl.Phys 43

    • NAID

      10013611337

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures2004
    • Author(s)
      S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys.Stat.Sol.(a) vol.201, no.2

      Pages: 190-194

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
    • Author(s)
      H.Hirayama, K Akita, T.Kyono, T.Nakamura, K.Ishibashi
    • Journal Title

      Jpn. J. Appl. Phys. 43, 10A

    • NAID

      10013611337

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(c) 201

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, K.Ishibashi
    • Journal Title

      Jpn.J.Appl.Phys. 43, 10A

    • NAID

      10013611337

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Effects of GaN Substrates on InAlGaN Quaternary UV LEDs2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2624-2627

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Effects of GaN Substrate in Ultraviolet Light-Emitting Diodes2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      SEI Technical Review Vol.165

      Pages: 75-80

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGar heterostructures2004
    • Author(s)
      S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys. Stat. Sol.(a) vol.201 no.2

      Pages: 190-194

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究 32

      Pages: 402-409

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004
    • Author(s)
      T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Phys. Stat. Sol.(a) 201, 12

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Advantage of GaN Substrates in InAlGaN Quaternary Ultraviolet Light-emitting Diodes2004
    • Author(s)
      K.Akita, H.Hirayama et al.
    • Journal Title

      Jpn.J.Appl.Phys. 43, 12

      Pages: 8030-8031

    • NAID

      10014215834

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004
    • Author(s)
      T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
    • Author(s)
      H.Hirayama
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Proc. SPIE Int. Soc. Opt. Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Effects of GaN Substrates in InAlGaN Quaternary UV-LEDs2004
    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2624-2627

    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003
    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Appl.Phys.Letters vol.82, no.10

      Pages: 1541-1543

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2003
    • Author(s)
      平山秀樹
    • Journal Title

      電子情報通信学会技術研究報告 103

      Pages: 13-18

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003
    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Appl. Phys. Letters vol.82, no.10

      Pages: 1541-1543

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Recent Progress of UV-LEDs using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation-2003
    • Author(s)
      H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
    • Journal Title

      Technical Report of IEICE ED2003-134

    • NAID

      110003174988

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Recent Progress of UV LEDs-using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation--2003
    • Author(s)
      H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
    • Journal Title

      Technical Report of IEICE. ED2003-134

    • NAID

      110003174988

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2003
    • Author(s)
      平山秀樹
    • Journal Title

      電子情報通信学会技術研究報告 103

      Pages: 13-18

    • NAID

      10013161084

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High-efficiency UV-emission at 345nm from InAlGaN light-emitting diodes2002
    • Author(s)
      A.Kinoshita, H.Hirayama, T.Yamabi, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc. 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002
    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys.Stat.Sol.(b) vol.234, no.3

      Pages: 764-768

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
    • Author(s)
      S.Iwai, H.Hirayama, Y.Aoyagi
    • Journal Title

      Material Research Society Symposium Proceeding Vol.719

      Pages: 3-9

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
    • Author(s)
      H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.12

      Pages: 2057-2059

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002
    • Author(s)
      S.Iwai, H.Hirayama, Y.Aoyagi
    • Journal Title

      Material Research Society Symposium Proceeding Vol.719

      Pages: 3-9

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Marked enhancement of 320-360nm UV emission in quaternary In_xAl_yGa_<1-x-y> N with In-segregation effect2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 207-209

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.1

      Pages: 37-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.9

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary In_xAl_yGa_<1-x-y>N with In-segregation effect2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 207-209

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Development of 300 nm Band High-Intensity Ultraviolet (UV) LEDs using Quaternary InAlGaN2002
    • Author(s)
      H.Hirayama, A.Kinoshita, Y.Aoyagi
    • Journal Title

      Oyobuturi Vol.71, No.2

      Pages: 204-208

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 330nm-Band High-Efficiency UV LEDs using Quaternary InAlGaN2002
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Japanese Journal of Crystal Growth vol.29, no.3

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Fabrication of Low Threating Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 2057-2059

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002
    • Author(s)
      H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.2

      Pages: 207-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
    • Author(s)
      H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.12

      Pages: 2057-2059

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 37-39

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Effect of thermal annealing on the Pd/Au contact to p-type A10.15Ga0.85N2002
    • Author(s)
      B.H.Jun, H.Hirayama, Y.Aoyagi
    • Journal Title

      Jan. J. Appl. Phys. Vol.41 part 1, no.2A

      Pages: 581-582

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.9

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Development of 300 nm Band High-Intensity Ultraviolet(UV) LEDs using Quaternary InAlGaN2002
    • Author(s)
      H.Hirayama, A.Kinoshita, Y.Aoyagi
    • Journal Title

      Oyobuturi Vol.71, No.2

      Pages: 204-208

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Investigation of the optimum growth conditions of wide bandgap InAlGaN quaternary for UV-LEDs2002
    • Author(s)
      T.Yamabi, A.Kinoshita, H.Hirayama, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc. 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering Vol.30, No.6

      Pages: 308-314

    • NAID

      130004465336

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Growth of AlN-SiC Solid Solutions by Sequential Supply Epitaxy2002
    • Author(s)
      A.Avramescu, H.Hirayama, Y.Aoyagi, S.Tanaka
    • Journal Title

      J. Crystal Growth vol.234

      Pages: 435-439

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters2002
    • Author(s)
      H.Hirayama, T.Yamanaka, A.Kinoshita, H.Hiraoka, A.Hirata, Y.Aoyagi
    • Journal Title

      GaN and Related Alloys-2001, Mater. Res. Soc 693

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 330nm-Band High-Efficiency UV-LEDs using Quaternary InAlGaN2002
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Japanese Journal of Crystal Growth vol.29, no.3

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002
    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys. Stat. Sol.(b) vol.243, no.3

      Pages: 764-768

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002
    • Author(s)
      H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80, no.2

      Pages: 207-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた330nm帯高効率紫外LED2002
    • Author(s)
      平山秀樹
    • Journal Title

      日本結晶成長学会誌 29

      Pages: 18-26

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002
    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering Vol.30, No.6

      Pages: 308-314

    • NAID

      130004465336

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl. Phys. Lett. vol.80 no.2

      Pages: 37-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた330nm帯高効率紫外LED2002
    • Author(s)
      平山秀樹
    • Journal Title

      日本結晶成長学会誌 29

      Pages: 18-26

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 340nm-band bright UV-LEDs using Quaternary InAlGaN active region2001
    • Author(s)
      H.Hirayama, A.Kinoshita, M.Ainoya, T.Yamanaka, A.Hirata, Y.Aoyagi
    • Journal Title

      Institute of Physics (IOP) Conference Series No.170: Chapter 2

      Pages: 195-200

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] (In)AlGaN窒化物混晶の結晶成長と300nm帯紫外高輝度LEDへの応用2001
    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究 30

      Pages: 308-314

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた300nm帯高輝度紫外LED2001
    • Author(s)
      平山秀樹
    • Journal Title

      月刊ディスプレー(テクノタイムズ社) 13年8月号

      Pages: 7-12

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 短波長光デバイス「紫外LED」2001
    • Author(s)
      平山秀樹
    • Journal Title

      光産業技術振興協会 13年度版

      Pages: 19-23

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] 340nm-band bright UV-LEDs using Quaternary InAlGaN active region2001
    • Author(s)
      H.Hirayama
    • Journal Title

      Institute of Physics (IOP) Conference Series 170

      Pages: 195-200

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] InAlGaN4元混晶を用いた330-350nm帯高効率紫外LED2001
    • Author(s)
      平山秀樹
    • Journal Title

      電子情報通信学会技術報告 ED2001-134

      Pages: 49-54

    • NAID

      110003199708

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Journal Article] pontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate
    • Author(s)
      W.Terashima, H.Hirayama
    • Journal Title

      Phys.Status Solidi.

      Volume: (掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246005

  • [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価
    • Author(s)
      五十嵐航平, 石岡亮, 塚田悠介, 福田武司, 本多善太郎, 平山秀樹, 鎌田憲彦
    • Journal Title

      電子情報通信学会EID2010-31

      Pages: 41-44

    • NAID

      10027800136

    • Data Source
      KAKENHI-PROJECT-21360003

  • [Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN
    • Author(s)
      H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki and N. Kamata
    • Journal Title

      physica Status Solidi (a) in press

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 量子カスケードレーザー素子2020
    • Inventor(s)
      平山秀樹，王利
    • Industrial Property Rights Holder
      理化学研究所
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] Quantum cascade laser element2020
    • Inventor(s)
      王利，林宗澤，王科，平山秀樹
    • Industrial Property Rights Holder
      RIKEN
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 深紫外ＬＥＤ装置及びその製造方法2019
    • Inventor(s)
      平山秀樹，前田哲利，鹿嶋行雄（他
    • Industrial Property Rights Holder
      理化学研究所，丸文（他
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 深紫外ＬＥＤ装置及びその製造方法2019
    • Inventor(s)
      平山秀樹，前田哲利，鹿嶋行雄（他
    • Industrial Property Rights Holder
      理化学研究所，丸文（他
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] ＡｌＮバッファー層を備えるテンプレート基板および窒化物半導体素子ならびにそれらの製造方法2019
    • Inventor(s)
      平山秀樹，定昌史，前田哲利，大澤篤史，前岡淳史
    • Industrial Property Rights Holder
      理化学研究所，株式会社SCREENホールディングス
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 深紫外ＬＥＤ装置及びその製造方法2019
    • Inventor(s)
      平山秀樹，前田哲利，鹿嶋行雄（他
    • Industrial Property Rights Holder
      理化学研究所，丸文（他
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 低転位ＡｌＮの製造方法及びそれに用いる種基板2019
    • Inventor(s)
      平山秀樹，岡田成仁，只友一行
    • Industrial Property Rights Holder
      理化学研究所，山口大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 深紫外ＬＥＤ装置及びその製造方法2019
    • Inventor(s)
      平山秀樹，前田哲利，鹿嶋行雄（他
    • Industrial Property Rights Holder
      理化学研究所，丸文（他
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 量子カスケードレーザー素子2018
    • Inventor(s)
      王利，林宗澤，平山秀樹
    • Industrial Property Rights Holder
      王利，林宗澤，平山秀樹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Patent] 量子カスケードレーザー素子2018
    • Inventor(s)
      王利，林宗澤，平山秀樹
    • Industrial Property Rights Holder
      王利，林宗澤，平山秀樹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Patent] 窒化物半導体量子カスケードレーザー2015
    • Inventor(s)
      平山秀樹，寺嶋亘
    • Industrial Property Rights Holder
      平山秀樹，寺嶋亘
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015-08-11
    • Overseas
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Patent] 窒化物半導体量子カスケードレーザー2015
    • Inventor(s)
      平山秀樹，寺嶋亘
    • Industrial Property Rights Holder
      平山秀樹，寺嶋亘
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015-08-11
    • Overseas
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Patent] 窒化物半導体量子カスケードレーザー2015
    • Inventor(s)
      平山秀樹，寺嶋亘
    • Industrial Property Rights Holder
      平山秀樹，寺嶋亘
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015-07-28
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Patent] 半導体発光素子及び製造方法2013
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      平山秀樹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-10-15
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Patent] 結合ピラーAlNバッファーを用いた高効率深紫外発光素子2012
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      平山秀樹
    • Industrial Property Rights Type
      特許
    • Filing Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24246010

  • [Patent] 窒化物半導体多重量子構造を有する発光素子及びその製造方法2010
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Filing Date
      2010-02-24
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 光半導体素子及びその製造方法2010
    • Inventor(s)
      平山秀樹, 大橋智明, 鎌田憲彦
    • Industrial Property Rights Holder
      平山秀樹, 大橋智明, 鎌田憲彦
    • Acquisition Date
      2010-06-25
    • Data Source
      KAKENHI-PROJECT-21360003

  • [Patent] 光半導体発光素子及びその製造方法2010
    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Acquisition Date
      2010-06-25
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 窒化物半導体多重量子障壁を有する発光素子及びその製造法2010
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      理研
    • Industrial Property Number
      2010-038912
    • Filing Date
      2010-02-24
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 窒化物半導体層の製造方法、窒化物半導体発光素子の製造方法および窒化物半導体発光素子2009
    • Inventor(s)
      平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
    • Industrial Property Rights Holder
      独立行政法人理化学研究所, パナソニック電工(株)
    • Industrial Property Number
      2009-104408
    • Filing Date
      2009-04-22
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 光半導体素子及びその製造方法2009
    • Inventor(s)
      平山秀樹, 柴田智彦
    • Industrial Property Rights Holder
      独立行政法人理化学研究所, DOWAエレクトロニクス(株)
    • Filing Date
      2009-08-28
    • Overseas
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 窒化物半導体発光素子2009
    • Inventor(s)
      平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
    • Industrial Property Rights Holder
      独立行政法人理化学研究所, パナソニック電工(株)
    • Industrial Property Number
      2009-104407
    • Filing Date
      2009-04-22
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 発光素子形成用複合基板及びその製造方法2008
    • Inventor(s)
      平山秀樹、古内史人
    • Industrial Property Rights Holder
      理化学研究所、宇部興産株式会社
    • Filing Date
      2008-09-03
    • Overseas
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 発光素子形成用複合基板及びその製造方法2008
    • Inventor(s)
      平山秀樹、古内史人
    • Industrial Property Rights Holder
      理化学研究所、宇部興産株式会社
    • Filing Date
      2008-09-04
    • Overseas
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 1.「光半導体素子及びその製造方法」2007
    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Number
      2007-219890
    • Filing Date
      2007-08-27
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 2.「半導体発光素子及びその製造方法」2007
    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Number
      2007-219910
    • Filing Date
      2007-08-27
    • Data Source
      KAKENHI-PLANNED-18069014

  • [Patent] 半導体発光素子2004
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2004-007325
    • Filing Date
      2004-01-14
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Patent] 半導体発光素子2004
    • Inventor(s)
      平山秀樹, 京野孝史
    • Industrial Property Rights Holder
      理研, 住友電工
    • Industrial Property Number
      2004-193809
    • Filing Date
      2004-06-30
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Patent] 半導体発光素子2004
    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2004-007325
    • Filing Date
      2004-01-14
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Patent] 発光素子及びその製造方法2003
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2003-296474
    • Filing Date
      2003-08-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Patent] p型半導体を用いた紫外発光素子2003
    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2003-017397
    • Filing Date
      2003-01-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Patent] p型半導体を用いた紫発光素子2003
    • Inventor(s)
      平山秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2003-017397
    • Filing Date
      2003-01-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13355001

  • [Patent] 発光素子及びその製造方法2003
    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      2003-296474
    • Filing Date
      2003-08-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205006

  • [Presentation] GaAs及びGaN系テラヘルツ量子カスケードレーザの進展2021
    • Author(s)
      平山秀樹、林宗澤、王利、王科、陳明曦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] High-power AlGaN UVC LEDs using PhC reflector p-contact layers2021
    • Author(s)
      H. Hirayama, Y. Kashima, E. Matsuura, N. Maeda, M. Jo, Y. Iwaisako, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima and T. Nagano
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress on GaN and GaAs-based terahertz quantum-cascade lasers2021
    • Author(s)
      H. Hirayama, T. Lin, L. Wang, M. Chen and K. Wang
    • Organizer
      Virtual Workshop on Material Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Pure AlGaN UVB LEDs on AlN template: Achieving 9.6% Efficiency at 304nm Emission by Exceeding the Limit of Hole Injection and Light Reflectance2021
    • Author(s)
      M. Ajmal Khan, N. Maeda, M. Jo, Y. Yamada, and H. Hirayama
    • Organizer
      2021 IUVA ASIA WORKSHOP
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress on GaAs and GaN-based terahertz quantum-cascade lasers2021
    • Author(s)
      H. Hirayama, T. Lin, L. Wang, M. Chen and K. Wang
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外LEDとTHz-QCLの最近の進展2021
    • Author(s)
      平山秀樹
    • Organizer
      第4回固体レーザーの高速探索と機能開発に向けたレーザー材料研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Enhancing the Current Density of AlGaN-Based UVB Laser Diode by Introducing an Al-graded Mg-doped p-AlGaN Hole Source Layer2021
    • Author(s)
      M. Ajmal Khan, N. Maeda, M. Jo, and H. Hirayama
    • Organizer
      ISPlasma 2021/IC-PLANTS 2021
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Design and MBE growth of GaN quantum cascade lasers for THz (25-60μm) and IR (1-3μm) spectrum range2021
    • Author(s)
      L. Wang, T. Lin, K. Wang, M. Chen and H. Hirayama
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高出力・未踏波長テラヘルツ量子カスケードレーザーの進展と展望2021
    • Author(s)
      平山秀樹、林宗澤、王利、王科、陳明曦
    • Organizer
      理研シンポジウム第8 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress on high-power UVC LEDs by increasing light-extraction efficiency2021
    • Author(s)
      H. Hirayama, Y. Kashima, E. Matsuura, N. Maeda and M. Jo
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress of AlGaN UVC LEDs by improving light extraction efficiency2020
    • Author(s)
      M. Jo, N, Maeda and H. Hirayama
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 殺菌用深紫外LEDの進展と展望2020
    • Author(s)
      平山秀樹
    • Organizer
      UV光源応用実証研究会、第3回会員限定研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaAs系およびGaN系テラヘルツ量子カスケードレーザーの進展2020
    • Author(s)
      平山秀樹、林宗澤、王科、王利
    • Organizer
      レーザー学会学術講演会第40回年次大会講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN 系 UV-A 多重量子井戸構造における内部量子効率と励起子の輻射再結合ダイナミクスの励起強度依存性2020
    • Author(s)
      室谷英彰、三好博之、武田椋平、中尾拓希、倉井聡、M. Ajmal Khan、前田哲利、定昌史、平山秀樹、山田陽一
    • Organizer
      第81回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] The Influence of Al-Graded undoped-AlGaN Cladding Layer’s Thickness on the Operating Voltages as well as on Injection Current of Ultraviolet-B Laser Diode2020
    • Author(s)
      M. Ajmal Khan, N. Maeda, and H. Hirayama
    • Organizer
      Optics Virtual 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] High performances of AlGaN-based UVC and UVB LEDs with relaxed buffer layer as well as using p-type graded multi-quantum barrier electron blocking layer2020
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Kashima and H. Hirayama
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN系多重量子井戸構造における励起子の輻射・非輻射再結合レートの励起強度依存性2020
    • Author(s)
      三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] ELO-AlNテンプレートの作製とMQWの評価2020
    • Author(s)
      斉藤貴大，金輝俊，岡田成仁，前田哲利，定昌史，平山秀樹，只友一行
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress in GaAs THz-QCLs and towards realizing GAN based QCLs2020
    • Author(s)
      K. Wang, T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      SPIE Photonic West
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] AlGaN深紫外LEDの進展と展望2020
    • Author(s)
      平山秀樹
    • Organizer
      日本学術振興会、結晶成長の科学と技術第161委員会、第114回研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Highly Efficient AlGaN UVB LEDs using Al-Graded Mg-doped p-type Multi-Quantum-Barrier Electron Blocking Layer (Grad p-MQB-EBL)2020
    • Author(s)
      M. Ajmal Khan, N. Maeda, M. Jo, Y. Yamada, and H. Hirayama
    • Organizer
      LEDIA 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaAs系およびGaN系テラヘルツ量子カスケードレーザーの進展2020
    • Author(s)
      平山秀樹、林宗澤、王科、王利
    • Organizer
      レーザー学会学術講演会第40回年次大会講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 産業化を目指した深紫外LED高効率化の検討2020
    • Author(s)
      平山秀樹
    • Organizer
      応用電子物性分科会研究例会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN系多重量子井戸構造における励起子レート方程式モデルによる効率Droop現象の解析2020
    • Author(s)
      室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN系深紫外LEDの進展と応用展開2020
    • Author(s)
      平山秀樹
    • Organizer
      表面・真空学会若手研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress in GaAs THz-QCLs and towards realizing GAN based QCLs2020
    • Author(s)
      K. Wang, T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      SPIE Photonic West
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] The improving resolution for dislocation analysis in GaN by three-photon microscopy2020
    • Author(s)
      E. Hase, T. Yasui, H. Hirayama and K. Nagamatsu
    • Organizer
      SPIE Photonics West
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN UVB LEDs at 310nm emission with high efficiency and light power using partially relaxed n-AlGaN buffer layer2020
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, E. Matsuura, Y. Kashima, Y. Yamada, H. Hirayama
    • Organizer
      ISPlasma2020/IC-PLANTS2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 電流注入と光励起を用いた UV-LED 内の欠陥準位の検出2020
    • Author(s)
      白井 草汰、千代田 夏樹、鎌田 憲彦、糸数 雄吏、山初 駿太、平山 秀樹
    • Organizer
      第６７回応用物理学会春季学術講演会、14p-PB2-6、（2020.3.14）
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] 電流注入と光励起を用いたUV-LED内の欠陥準位の検出2020
    • Author(s)
      白井草汰，千代田夏樹，鎌田憲彦，糸数雄吏，山初駿太，平山秀樹
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] LEE Enhancement in AlGaN UVC LED using Photonic Crystal Reflector Fabricated on p-GaN Contact Layer2020
    • Author(s)
      H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Assisted-scattering two-wall teraherz quantum cascade lasers2020
    • Author(s)
      L. Wang, T. T. Lin, M. Chen and H. Hirayama
    • Organizer
      テラヘルツ科学の最先端VII
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] DCスパッタAlNテンプレート上UVC AlGaN LEDの作製と評価2019
    • Author(s)
      最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN系深紫外LEDの最近の進展と今後の展望2019
    • Author(s)
      平山秀樹
    • Organizer
      日本金属学会2019年春季（164回）講演大会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high output power THz QCLs by reducing parasitic leakage current2019
    • Author(s)
      T. T. Lin, L. Wang, K. Wang and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] DCスパッタAlNを用いたAlGaN層格子緩和の促進2019
    • Author(s)
      最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Design and analysis of DUV-LEDs and QCLs by utilizing HOKUSAI2019
    • Author(s)
      Joosun Yun and Hideki Hirayama
    • Organizer
      the ALL-RIKEN workshop
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Presentation] AlGaN系深紫外LEDの最近の進展2019
    • Author(s)
      平山秀樹
    • Organizer
      徳島大学ポストLEDフォトニクス研究所 開所記念式典
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 殺菌用紫外LEDの開発と今後の展望2019
    • Author(s)
      平山秀樹
    • Organizer
      OPIE’19紫外線応用技術セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN歪制御に向けたAlGaN/AlN界面構造とアニール効果の検討2019
    • Author(s)
      糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] LEE enhancement in AlGaN UVC LED using photonic crystal reflector fabricated on p-GaN contact layer2019
    • Author(s)
      H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
    • Organizer
      SPIE Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Detection of Nonradiative Recombination Levels in UV-LEDs by Irradiating Below-Gap Excitation Light2019
    • Author(s)
      Norihiko Kamata, Ken Matsuda, Sota Shirai, Zentaro Honda, and Hideki Hirayama
    • Organizer
      Compound Semiconductor Week (CSW) 2019, TuP-D-11 (Poster), Nara, May 21, 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Current challenges and future direction for AlGaN based UV-B LEDs grown by LP-MOVPE2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
    • Organizer
      European Materials Research Society Spring Meeting 2019 (E-MRS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Level broadening by dipole scattering in AlGaN/ AlGaN superlattice structures2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      Infrared Terahertz Quantum Workshop (ITQW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progression in strained GaN/AlGaN THz-QCLs, growth and fabrication2019
    • Author(s)
      L. Wang, T. T. Lin and H. Hirayama
    • Organizer
      東北大学＆理研第1回連携ワークショップ
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Influence of Dipole Scattering to Level Broadening and Carrier Transport in AlGaN-based Superlattice Structures2019
    • Author(s)
      Joosun Yun and Hideki Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Presentation] Optimization of THz QCLs by suppressing A leakage current via high energy states2019
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Fabrication of UVC AlGaN LEDs on DC-sputtered AlN templates with high-temperature annealing2019
    • Author(s)
      Y. Mogami, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] DCスパッタAlNテンプレートを用いたAlGaN深紫外LEDの作製2019
    • Author(s)
      最上耀介，茂手木省吾，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progression in strained GaN/AlGaN THz-QCLs, growth and fabrication2019
    • Author(s)
      L. Wang, T. T. Lin and H. Hirayama
    • Organizer
      東北大学＆理研第1回連携ワークショップ
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 微傾斜サファイア基板上AlNの選択横方向成長2019
    • Author(s)
      斉藤貴大，中村亮太，藤川紗千恵，金輝俊，前田哲利，岡田成仁，平山秀樹，只友一行
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress on high output power THz QCLs developed by reducing horizontal parasitic current leakage2019
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      電子情報通信学会　電子デバイス研究会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress on high output power THz QCLs developed by reducing horizontal parasitic current leakage2019
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      電子情報通信学会　電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Influence of dipole scattering to level broadening and carrier transport in AlGaN-based superlattice structures2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high-efficiency AlGaN deep-UV LEDs2019
    • Author(s)
      H. Hirayama, N. Maeda and M. Jo
    • Organizer
      SPIE Optics + Photonics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Problems and latest achievements in AlGaN-based deep-UV LEDs2019
    • Author(s)
      H. Hirayama
    • Organizer
      International Workshop on Ultraviolet Materials and Devices (IWUMD4)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Nonradiative Recombination Centers in UVB AIGaN Quantum Well and Their Temperature Dependence Revealed by Below-Gap Excitation Light2019
    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda and Hideki Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), MoP-CH-12(Poster), Okinawa, Nov.11, 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Challenge and opportunity for mass production of UVC LED by MOVPE on high temperature annealed AlN template2019
    • Author(s)
      K. Matsumoto, Y. Tomita, A. Mishima, Y. Yamaoka, S. Koseki, Y. Yano, H. Miyake and H. Hirayama
    • Organizer
      Material Research Meeting 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Enhanced strain relaxation in AlGaN layers grown on sputter-based AlN templates2019
    • Author(s)
      Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tomioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yagichi and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 特異構造の特性を生かした新機能発光デバイスの研究2019
    • Author(s)
      平山秀樹
    • Organizer
      新学術領域研究第4回領域全体会議
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Simulation and growth of GaN/AlGaN based terahertz quantum cascade structures2019
    • Author(s)
      K. Wang, L. Wang, T. T. Lin, K. Fukuda, R. Zhang, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang, T. Grange and H. Hirayama
    • Organizer
      Infrared Terahertz Quantum Workshop (ITQW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress on high-efficiency AlGaN-based UVB-LEDs for both medical and agricultural applications2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optimizing AlGaN-based UVB LEDs using experimental device data in the Nextnano software2019
    • Author(s)
      M. C. D. Figueira, A. Trellakis, S. Birner, M. A. Khan and H, Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optimization of THz QCLs by suppressing A leakage current via high energy states2019
    • Author(s)
      T. T. Ln, K. Wang, L. Wang and H. Hirayama
    • Organizer
      44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
    • Author(s)
      Joosun Yun and Hideki Hirayama
    • Organizer
      the 7th RAP symposium
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Presentation] AlGaN UVC LEDs directly grown on DC-sputtered and high temperature annealed AlN templates2019
    • Author(s)
      S. Kuwaba, Y. Itokazu, S. Motegi, Y. Mogami, A. Osawa, K. Osaki, Y. Tamioka, A. Maeoka, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Nonradiative recombination centers in UVB AlGaN quantum well and their temperature dependence revealed by below-gap excitation light2019
    • Author(s)
      M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 0.45watt power GaAs-based THz QCL developed by reducing horizontal current leakage utilizing variable Al1-xGaxAs barriers-wells height structure2019
    • Author(s)
      T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      東北大学＆理研第1回連携ワークショップ
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Near- and far-infrared quantum cascasde lasers based on GaAs and GaN materials: devices design and MBE growth2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      電子情報通信学会　電子デバイス研究会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN 系多重量子井戸構造における励起子レート方程式モデルによる効率曲線の解析2019
    • Author(s)
      三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 0.45watt power GaAs-based THz QCL developed by reducing horizontal current leakage utilizing variable Al1-xGaxAs barriers-wells height structure2019
    • Author(s)
      T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      東北大学＆理研第1回連携ワークショップ
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Level broadening by dipole scattering in AlGaN/ AlGaN superlattice structures2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      Infrared Terahertz Quantum Workshop (ITQW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 電子ブロック層の最適化による250nm AlGaN UVC-LEDの出力改善2019
    • Author(s)
      中村励志，藤川紗千恵，前田哲利，遠藤聡，藤代博記，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Current status and future directions of high power AlGaN-based UVB LEDs with emission of 280nm-320nm2019
    • Author(s)
      M. A. Khan and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Simulation and growth of GaN/AlGaN based terahertz quantum cascade structures2019
    • Author(s)
      2.K. Wang, L. Wang, T. T. Lin, K. Fukuda, R. Zhang, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes2019
    • Author(s)
      M. A. Khan, J. P. Bermudo, Y. Ishikawa, H. Ikenoue, S. Fujikawa, N. Maeda, M. Jo and H. Hirayama
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Improved simulation of MOCVD growth of AlN by using data assimilation2019
    • Author(s)
      M. Jo, Y. Itokazu, S. Kuwaba and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] DCスパッタAlNテンプレートを用いたUVCLEDの進展2019
    • Author(s)
      最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      電子情報通信学会 レーザ・エレクトロニクス研究会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外LEDの国内外の最新技術と今後の展望2019
    • Author(s)
      平山秀樹
    • Organizer
      特許庁技術研修セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Level broadening by dipole scattering in AlGaN/AlGaN superlattice structures2019
    • Author(s)
      Joosun Yun and Hideki Hirayama
    • Organizer
      Infrared Terahertz Quantum Workshop (ITQW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Presentation] データ同化を用いたAlN成長シミュレーションの高精度化2019
    • Author(s)
      定昌史，糸数雄吏，桑葉俊輔，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Influence of dipole scattering to level broadening and carrier transport in AlGaN-based superlattice structures2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Recent progress and future of GaN and GaAs-based THz-QCL2019
    • Author(s)
      K. Wang, L. Wang, T. T. Lin, K. Fukuda and H. Hirayama
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang, T. Grange and H. Hirayama
    • Organizer
      Infrared Terahertz Quantum Workshop (ITQW 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] AlGaN系多重量子井戸構造における励起子レート方程式モデルによる効率曲線の解析(2)2019
    • Author(s)
      室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Effect of 4μm-thick buffer as well as 50% relaxed n-AlGaN electron Injection layer on the performance of 308nm UV-B LED2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Yamada, H. Hirayama
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs2019
    • Author(s)
      H. Hirayama
    • Organizer
      48th International School & Conference on the Physics of Semiconductors (Jaszowiec 2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] MBE grown p-type AlGaN and deep ultraviolet light emitting diodes2019
    • Author(s)
      K. Wang, N. Maeda, M. A. Khan, Z. Li, Y. Wu, T. Tao, B. Liu, R. Zhang and H. Hirayama
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 深紫外LEDの開発最前線2019
    • Author(s)
      定昌史，平山秀樹
    • Organizer
      モノづくりフェア2019
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Al系窒化物結晶ヘテロ成長技術とそれを用いた深紫外線LEDの開発2019
    • Author(s)
      平山秀樹
    • Organizer
      第66回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optimization of p-cladding layer for improvement of deep ultraviolet light emitting diode performance2019
    • Author(s)
      Y. Tomita, A. Mishima, Y. Yamaoka, T. Arimura, S. Koseki, Y. Yano, K. Matsumoto, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] pクラッド層の最適化によるAlGaN系深紫外LEDの性能向上2019
    • Author(s)
      富田優志，三嶋晃，山岡優哉，有村忠信，小関修一，矢野良樹，松本功，平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Radiative and nonradiative recombination rates of excitons and their effects on internal quantum efficiency of AlGaN-based UV-B MQWs2019
    • Author(s)
      H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Investigation of AlGaN/AlN interface structure and annealing effect for control of strain re- laxation2019
    • Author(s)
      Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Role of exciton recombination processes on internal quantum efficiency in AlGaN-based UV-B multiple quantum wells2019
    • Author(s)
      H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama and Y. Yamada
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Epitaxial lateral overgrowth of AlN with partially non-dislocation-region on vicinal AlN template2019
    • Author(s)
      N. Okada, F. Kim, T. Saito, S. Fujikawa, N. Maeda, H. Hirayama and K. Tadatomo
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Improved current injection in AlGaN-based 310 nm-UVB LED for real world applications2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
    • Organizer
      ISPlasma2019/IC-PLANTS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] LEE enhancement in AlGaN UVC LED using photonic crystal reflector2019
    • Author(s)
      H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, K. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN量子井戸構造における深紫外誘導放出の温度依存性2019
    • Author(s)
      田邉凌平，久永桂典，濱田晟，別府寛太，倉井聡，室谷英彰，前田哲利，定昌史，平山秀樹，山田陽一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
    • Author(s)
      J. Yun and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Optically pumped stimulated emission from AlGaN-based UV-C multiple quantum wells with high internal quantum efficiency of 16 % at 750 K2019
    • Author(s)
      H. Murotani, K. Hisanaga, R. Tanabe, A. Hamada, N. Maeda, M. Jo, H. Hirayama and Y. Yamada
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
    • Author(s)
      L. Wang, K. Wang, T. T. Lin and H. Hirayama,
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Gain predicted by NEGF method in terahertz quantum cascade lasers based on different semiconductors2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high output power THz QCLs by reducing parasitic leakage current2019
    • Author(s)
      T. T. Lin, L. Wang, K. Wang and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Near- and far-infrared quantum cascasde lasers based on GaAs and GaN materials: devices design and MBE growth2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      電子情報通信学会　電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Recent progress and future of GaN and GaAs-based THz-QCL2019
    • Author(s)
      K. Wang, L. Wang, T. T. Lin, K. Fukuda and H. Hirayama
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Gain predicted by NEGF method in terahertz quantum cascade lasers based on different semiconductors2019
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
    • Author(s)
      L. Wang, K. Wang, T. T. Lin and H. Hirayama
    • Organizer
      理研シンポジウム第7 回「光量子工学研究」
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] MBE grown p-type AlGaN and deep ultraviolet light emitting diodes2019
    • Author(s)
      K. Wang, N. Maeda, M. A. Khan, Z. Li, Y. Wu, T. Tao, B. Liu, R. Zhang and H. Hirayama
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Simultaneous improvements in EQE and WPE of AlGaN UV-C LEDs with Ni:AlN/Al Ohmic reflectors2019
    • Author(s)
      T. G. Kim, T. H. Lee, H. Hirayama, T. H. Park, K. R. Son
    • Organizer
      SPIE Optics + Photonics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 0.44 watt power GaAs/AlGaAs THz QCL developed by reducing horizontal current leakage2019
    • Author(s)
      T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Realization of high light output power in AlGaN-based UVB LED at 310±2nm emission using highly relaxed (50%) n-AlGaN electron injection layer2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, E. Matsuura, Y. Kashima, Y. Yamada and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 0.44 watt power GaAs/AlGaAs THz QCL developed by reducing horizontal current leakage2019
    • Author(s)
      T. T. Lin, L. Wang and H. Hirayama
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Achievement of internal quantum efficiency up to 53% at 326nm-UVA emission from AlGaN QWs with engineering of highly relaxed buffer layer2019
    • Author(s)
      M.A. Khan, R. Takeda, H. Miyoshi, Y. Yamada, S. Fujikawa, N. Maeda, M. Jo and H. Hirayama
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 42mW light power from AlGaN-based 302nm-band UVB LEDs: a way forward for UVB LDs2019
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, Y. Yamada, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Influence of the strain relaxation on the optical property of AlGaN quantum wells2019
    • Author(s)
      Y. Itokazu, Y. Mogami, S. Kuwaba, S. Motegi, A. Osawa, K. Osaki, Y. Tamioka, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Highly reflective ruthenium (Ru) p-type electrode for AlGaN deep-UV LED2018
    • Author(s)
      N. Maeda, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Evolution of morphology and crystalline quality of sputtered AlN films with high-temperature annealing2018
    • Author(s)
      Y. Mogami, S. Motegi, A. Osawa, K. Ozaki, C. Tanioka, C. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yagichi and H. Hirayama
    • Organizer
      International Symposium on Growth of III-Nitrides (ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Characterization of AIGaN based lower bound (280-300nm) UVB LED device grown by MOCVD2018
    • Author(s)
      M. A. Khan, Y. Itokazu, T. Matsumoto, S. Minami, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018/IC-PLANTS2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外LEDの進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      日本学術振興会結晶成長の科学と技術第161委員会第105回研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018
    • Author(s)
      桑葉 俊輔、糸数 雄吏、定 昌史、鎌田 憲彦、平山 秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Theoretical and experimental approaches for GaN/AlGaN Hz quantum cascade lasers2018
    • Author(s)
      K. Wang, L. Wang, T. T. Lin and H. Hirayama
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Efficient emission by current injection from 280 nm AlGaN deep-UV LD structures2018
    • Author(s)
      N. Maeda, M. Jo, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外LEDの最近の進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      平成30年度第1回ITEC FORUM
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製2018
    • Author(s)
      藤川紗千恵，石黒稔也，王科，藤代博記，平山秀樹
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optimization of terahertz quantum cascade lasers by suppressing a carrier leakage channel via a high energy state2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      International Conference on Photonics Research (ICPR2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 紫外線LEDの開発と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      赤外・紫外特別セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Controlled crystal orientations of semipolar AlN grown on m-plane sapphire by MOCVD2018
    • Author(s)
      M. Jo, Y. Itokazu, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Development of 240 nm-band high output power AlGaN UVC LED2018
    • Author(s)
      T. Ishiguro, R. Nakamura, S. Fujikawa, N. Maeda, R. Machida, H. Fujishiro, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] p型ドット電極とリフレクターによるAlGaN深紫外LEDの高効率動作2018
    • Author(s)
      前田哲利，J. Yun，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Approach toward GaN-based terahertz quantum-cascade laser2018
    • Author(s)
      K. Wang, T. T. Lin, L. Wang, K. Fukuda, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Design of asymmetric two-wells indirect pumping terahertz quantum cascade lasers for high-temperature operation2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外LEDの基礎・課題と将来展望2018
    • Author(s)
      平山秀樹
    • Organizer
      日本学術振興会第162委員会第110回研究会特別公開シンポジウム
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high power THz QCLs2018
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      Nanotech Malaysia 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 殺菌用に実用化した深紫外LED2018
    • Author(s)
      平山秀樹
    • Organizer
      理化学研究所一般公開2018サイエンスレクチャー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Milliwatt Power UVA LEDs Developed by Using AlGaN Superlattice (SL) Buffer Layers Fabricated on AlN/Sapphire Templates2018
    • Author(s)
      Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy ICMOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Design of asymmetric two-wells indirect pumping terahertz quantum cascade lasers for high-temperature operation2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 高温アニール処理DCスパッタAlNテンプレートの評価2018
    • Author(s)
      最上耀介，茂手木省吾，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 280nm帯AlGaN深紫外LD構造の作製とその電流注入発光特性2018
    • Author(s)
      前田哲利，定昌史，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDの最近の進展2018
    • Author(s)
      平山秀樹
    • Organizer
      第150回記念微小光学研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高温アニール処理AlN上に作製したUVC-LEDの高効率動作2018
    • Author(s)
      糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] PhCリフレクターを用いたUVC-LEDの高効率化の進展2018
    • Author(s)
      鹿嶋行雄，渡邊康弘，柴田智彦，前田哲利，松浦恵里子，岩井武，小久保光典，田代貴晴，古田寛治，上村隆一郎，長田大和，高木秀樹，倉島優一，祝迫恭，長野丞益，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD2018
    • Author(s)
      S. Fujikawa, T. Ishiguro, K. Wang, W. Terashima, H. Fujishiro and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Reflectance of reflective photonic crystal on p-contact layer of AlGaN deep-UV LED2018
    • Author(s)
      J. Yun，鹿島行雄，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 特異構造の特性を生かした新機能発光デバイスの研究2018
    • Author(s)
      平山秀樹
    • Organizer
      新学術領域研究平成30年度領域全体会議
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high-power THz-QCLs2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018
    • Author(s)
      桑葉俊輔，糸数雄吏，定昌史，鎌田憲彦，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] ノーベル賞受賞中村先生のご紹介、青色発光半導体開発のインパクト2018
    • Author(s)
      平山秀樹
    • Organizer
      サイエンスシンポジウム
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDの進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      第18回高機能膜フォーラム
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 230-240nm短波長UVC-LEDの高出力化の検討2018
    • Author(s)
      石黒稔也，中村励志，藤川紗千恵，前田哲利，藤代博記，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 半極性AIN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018
    • Author(s)
      定昌史, 糸数雄吏, 桑葉俊輔, 鎌田憲彦, 平山秀樹
    • Organizer
      独立行政法人日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会, 第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] 325nm emission from highly transparent AlGaN UVA LEDs grown on AlN template in the LP-MOCVD2018
    • Author(s)
      M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Development of high-power THz-QCL by supressing regidual leakage current2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang, and H. Hirayama
    • Organizer
      19th East Asia Sub-millimeter-wave Receiver Technology Workshop and 5th RIKEN-NICT Joint Workshop on Terahertz Technology
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDの進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      LED総合フォーラム2018 in 徳島
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Progress of 310 nm-band high-efficiency UVB-LED for medical applications2018
    • Author(s)
      M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Hybrid growth of AlGaN deep ultraviolet ligh emitting diodes by MBE and MOCVD2018
    • Author(s)
      K. Wang, N. Meda, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Resent progress of THz-QCLs2018
    • Author(s)
      H. Hirayama
    • Organizer
      International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018
    • Author(s)
      Shunsuke Kuwaba, Yuri Itokazu, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Optimization of terahertz quantum cascade lasers by suppressing a carrier leakage channel via a high energy state2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      International Conference on Photonics Research (ICPR 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Broadening mechanisms and simulation for GaN based THz QCLs by non-equilibrium Green’s function method2018
    • Author(s)
      K. Wang, T. Grange, T. T. Lin, L. Wang, S. Birner, J. Yun, W. Terashima and H. Hirayama
    • Organizer
      8th International Quantum Cascade Laser School and Workshop (IQCLSW 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] DCスパッタ法AlNの高温アニール処理とUVC-LEDへのアプローチ2018
    • Author(s)
      茂手木省吾，最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 殺菌用・深紫外LEDの開発2018
    • Author(s)
      平山秀樹
    • Organizer
      JST新技術説明会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Approach toward GaN-based terahertz quantum-cascade laser2018
    • Author(s)
      K. Wang, T. T. Lin, L. Wang, K. Fukuda, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Narrow band milliwatts power operation of AlGaN based UVB LED for medical applications2018
    • Author(s)
      M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Conference on UV LED Technologies & Applications (ICULTA-2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Theoretical and experimental approaches for GaN/AlGaN Hz quantum cascade lasers2018
    • Author(s)
      K. Wang, L. Wang, T. T. Lin and H. Hirayama
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD2018
    • Author(s)
      S. Fujikawa, T. Ishiguro, K. Wang, W. Terashima, H. Fujishiro and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Simulation of optical gain for GAN terahertz quantum cascade lasers by using non-equilibrium green's function method2018
    • Author(s)
      K. Wang, T. T. Lin, L. Wang, J. Yun and H. Hirayama
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018
    • Author(s)
      糸数 雄吏、桑葉 俊輔、定 昌史、鎌田 憲彦、平山 秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Hybrid growth of AlGaN deep ultraviolet ligh emitting diodes by MBE and MOCVD2018
    • Author(s)
      K. Wang, N. Meda, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 半極性AlN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018
    • Author(s)
      定昌史，糸数雄吏，桑葉俊輔，鎌田憲彦，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018
    • Author(s)
      糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlNの選択横方向成長におけるストライプ方位依存性2018
    • Author(s)
      金輝俊，斉藤貴大，藤川紗千恵，前田哲利，岡田成仁，平山秀樹，只友一行
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] New design of GaAs based THz-QCL for obtaining high optical gain by indirect-injecting asymmetric-wells superlattice structure2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 325nm Emission From Highly Transparent AlGaN UVA LEDs Grown on AlN Template in the LP-MOCVD2018
    • Author(s)
      Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy (ICMOVPE)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Development of 304-310nm-band UVB LEDs both for medical and agricultural applications2018
    • Author(s)
      M. A. Khan, N. Maeda, Y. Yamada, and H. Hirayama
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDのp型高反射Ru電極の検討2018
    • Author(s)
      前田哲利，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Increased output power of THz-QCLs by reducing leakage current via upper levels2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] THz-QCLs toward high output power near liquid nitrogen temperature operation2018
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      CIMTEC 2018-8th Forum on New Materials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent Progress of high-efficiency AlGaN Deep-UV LEDs2018
    • Author(s)
      H. Hirayama, M. Jo, N. Maeda, and N. Kamata
    • Organizer
      16th Symposium on the Science and Technology of Lighting (LS-16)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of AlGaN deep-UV LEDs2018
    • Author(s)
      H. Hirayama and M. Jo
    • Organizer
      International Workshop on UV Materials and Devices 2018 (IWUMD2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of high output power THz quantum cascade lasers2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Improving the optical gain at high temperatue in THz-QCLs by using asymmetric two-wells scheme2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      8th International Quantum Cascade Laser School and Workshop (IQCLSW2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Broadening mechanisms and simulation for GaN based THz QCLs by non-equilibrium Green’s function method2018
    • Author(s)
      K. Wang, T. Grange, T. T. Lin, L. Wang, S. Birner, J. Yun, W. Terashima and H. Hirayama
    • Organizer
      8th International Quantum Cascade Laser School and Workshop (IQCLSW2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] m面サファイア上に成長した(11-12)面AlGaN量子井戸の発光特性2018
    • Author(s)
      定昌史，糸数雄吏，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optical Characterization of Defect Levels in AlGaN Multiple Quantum Wells by Using Below-Gap Excitation Light2018
    • Author(s)
      N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
    • Organizer
      The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] 殺菌用・深紫外LEDの進展2018
    • Author(s)
      平山秀樹
    • Organizer
      第32回JFCAテクノフェスタ
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Over 20 mW operation of 303 nm AlGaN UVB LED with p-AlGaN transparent contact layer2018
    • Author(s)
      M. A. Khan，前田哲利，定昌史，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Influence of the nucleation condetions on the quality of AlN layers with high-temperature annealing and regrowth processes2018
    • Author(s)
      Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress towards realizing GaN/AlGaN quantum cascade lasers2018
    • Author(s)
      K. Wang, L. Wang, T. T. Lin, and H. Hirayama
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Increased output power of THz-QCLs by reducing leakage current via upper levels2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang and H. Hirayama
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
    • Author(s)
      K. Wang, T. T. Lin, L. Wang, J. Yun, W. Terashima, H. Hirayama, T. Grange, Z. Jehn, and S. Birnner
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs2018
    • Author(s)
      H. Hirayama and M. Jo
    • Organizer
      The International Conference and Exhibition on UV LED Technologies & Applications (ICULTA)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LDの実現に向けた最近の進展2018
    • Author(s)
      前田哲利，山田陽一，定昌史，平山秀樹
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Investigation of crystallinity and current injection issue in 310 nm AlGaN UVB LED grown on AlN template in LP-MOVPE2018
    • Author(s)
      M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, Y. Yamada, N. Kamata and H. Hirayama
    • Organizer
      International Symposium on Growth of III-Nitrides (ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Increasing light-extraction efficiency of AlGaN UVLED with remained low voltage by using PhC reflector on p-GaN contact layer2018
    • Author(s)
      H, Hirayama, Y. Kashima, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kuwashima, Y. Iwaisako, T. Nagano
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress towards realizing GaN/AlGaN quantum cascade lasers2018
    • Author(s)
      K. Wang, L. Wang, T. T. Lin, and H. Hirayama
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent Progress of AlGaN UVC LEDs2018
    • Author(s)
      H. Hirayama
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 殺菌用紫外LEDの開発と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      光とレーザーの科学技術フェア2018紫外線セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Nonradiative Recombination Centers in AlGaN Deep UV-LEDs Detected by Below Gap Excitation Light2018
    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] Improvement in EQE of 294 - 303 nm AlGaN UVB LED by increasing the emission efficiency from multiple quantum well (MQW)2018
    • Author(s)
      M. A. Khan, N. Maeda, Y. Yamada, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDの光取り出し効率の向上2018
    • Author(s)
      平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Highly-reflective photonic crystal (HR-PhC) design for increasing light- extraction efficiency (LEE) of AlGaN deep-UV LEDs2018
    • Author(s)
      J. Yun, Y. Kashima, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Current leakage suppression in two-well structural THz-QCLs by using asymmetric design2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] [Tutrial] Resent progress of THz-QCLs2018
    • Author(s)
      H. Hirayama
    • Organizer
      International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
    • Author(s)
      K. Wang, T. T. Lin, L. Wang, J. Yun, W. Terashima, H. Hirayama, T. Grange, Z. Jehn, and S. Birnner
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Highly reflective Ni doped AlN/Al ohmic reflectors and its application to AlGaN-based flip-chip deep-UV LEDs2018
    • Author(s)
      T. H. Lee, T. H. Park, K. R. Son, H. J. Lee, S. K. Kang, H. Hirayama, and T. G. Kim
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Nonradiative recombination centers in AlGaN deep UV-LEDs detected by below-gap excitation light2018
    • Author(s)
      M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of AlGaN deep-UV LEDs by increasing light-extraction efficiency2018
    • Author(s)
      H. Hirayama and M. Jo
    • Organizer
      The 7th International Symposium on Growth of III-Nitrides (ISGN-7)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LEDの高効率化技術2018
    • Author(s)
      平山秀樹
    • Organizer
      サイエンス＆テクノロジー社セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Milliwatt power UVA LEDs developed by using AlGaN superlattice (SL) buffer layers fabricated on AlN/sapphire templates2018
    • Author(s)
      M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018
    • Author(s)
      S. Kuwaba, Y. Itokazu, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
    • Author(s)
      Ke Wang, Tsung-Tse Lin, Li Wang, Joosun Yun, Wataru Terashima, Hideki Hirayama, Thomas Grange, Zoltan Jehn, and Stefan Birner
    • Organizer
      International Workshop on Nitride Semiconductors (IWN) 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04251

  • [Presentation] Improved crystal quality of semipolar AlN by employing thermal annealing technique with MOVPE2018
    • Author(s)
      M. Jo, S. Minami and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] UVCレーザダイオード実現へのアプローチ2018
    • Author(s)
      前田哲利，定昌史，松本卓磨，鎌田憲彦，平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Improving the optical gain at high temperatue in THz-QCLs by using asymmetric two-wells scheme2018
    • Author(s)
      L. Wang, T. T. Lin, K. Wang and H. Hirayama
    • Organizer
      8th International Quantum Cascade Laser School and Workshop (IQCLSW 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 深紫外LEDの進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      UV LED Forum in Japan
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Evaluation of DC sputtered AlN template by wet KOH etching2018
    • Author(s)
      Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高効率・深紫外線LEDの普及に向けて2018
    • Author(s)
      平山秀樹
    • Organizer
      先端的低炭素化技術開発（ALCA）、新技術説明会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 240nm帯AlGaN UVC-LEDの高出力化の検討2018
    • Author(s)
      石黒稔也，中村励志，藤川紗千恵，前田哲利，町田龍人，藤代博記，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製2018
    • Author(s)
      藤川紗千恵，石黒稔也，王科，藤代博記，平山秀樹
    • Organizer
      理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] AlGaN深紫外LEDの進展と今後の展望2018
    • Author(s)
      平山秀樹
    • Organizer
      パワー光源及び応用システム研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Optical characterization of defect levels in AlGaN multiple quantum wells by using below-gap excitation light2018
    • Author(s)
      N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
    • Organizer
      The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] DCスパッタAlN膜の高温アニールによる表面状態の変化2018
    • Author(s)
      茂手木省吾，最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] UVC emission from (11-22) AlGaN quantum wells grown by metal-organic chemical vapor deposition2018
    • Author(s)
      M. Jo, Y. Itokazu and H. Hirayama
    • Organizer
      International Symposium on Growth of III-Nitrides (ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Development of high-power THz-QCL by supressing regidual leakage current2018
    • Author(s)
      T. T. Lin, K. Wang, L. Wang, and H. Hirayama
    • Organizer
      19th East Asia Sub-millimeter-wave Receiver Technology Workshop and 5th RIKEN-NICT Joint Workshop on Terahertz Technology
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Influence of the nucleation conditions on the quality of AlN layers with high temperature annealing and regrowth processes2018
    • Author(s)
      Yuri Itokazu, Shunsuke Kuwaba, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954

  • [Presentation] AlGaN 深紫外LED の高効率化の現状と展望2018
    • Author(s)
      平山秀樹
    • Organizer
      2018年電子情報通信学会ソサイエティ大会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高出力THz-QCLの進展2017
    • Author(s)
      林宗澤，寺嶋亘，平山秀樹
    • Organizer
      第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
    • Place of Presentation
      情報通信研究機構
    • Year and Date
      2017-02-27
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Design of indirect injection scheme THz QCLs with high operation temperature2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      The 44th International Symposium on Compound Semiconductors (ISCS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価2017
    • Author(s)
      石黒稔也，藤川紗千恵，王科，前田哲利，町田龍人，藤代博記，平山秀樹
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] AlGaN深紫外LED高反射フォトニック結晶のダメージレス精密加工2017
    • Author(s)
      鹿嶋行雄，田代貴晴，小久保光典，上村隆一郎，長田大和，岩井武，森田敏郎，松浦恵里子，前田哲利，定昌史，高木秀樹，平山秀樹
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高出力THz-QCLの進展2017
    • Author(s)
      林宗澤，寺嶋亘，平山秀樹
    • Organizer
      第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
    • Place of Presentation
      情報通信研究機構（東京都小金井市）
    • Year and Date
      2017-02-27
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] AlGaN高効率深紫外LEDの進展2017
    • Author(s)
      前田哲利，定昌史，鹿嶋行雄，松浦恵里子，高木秀樹，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，平山秀樹
    • Organizer
      理研シンポジウム　第5回「光量子工学」
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Recent progress of AlGaN-based deep-ultraviolet light-emitting diodes2017
    • Author(s)
      M. Jo and H. Hirayama
    • Organizer
      8th International conference and Exhibition on LASERS, OPTICS & PHOTONICS
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Exceeding 30% IQE of AlGaN quantum well 304 nm UVB emission and single peak operation of 326nm UV LED2017
    • Author(s)
      M. A. Khan, Y. Itokazu, T. Matsumoto, N. Maeda, M. Jo, H. Hirayama and N. Kamata
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
    • Author(s)
      K. Wang, T. T. Lin, W. Terashima and H. Hirayama
    • Organizer
      The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高反射Ni/Au電極のNi膜厚最適化によるAlGaN深紫外LEDの外部量子効率9％動作2017
    • Author(s)
      前田哲利，定昌史，鹿嶋行雄，松浦恵里子，高木秀樹，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，平山秀樹
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 高反射フォトニック結晶によるAlGaN深紫外LEDの外部量子効率10%動作2017
    • Author(s)
      鹿嶋行雄，前田哲利，松浦恵里子，定昌史，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，高木秀樹，平山秀樹
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Design of THz QCLs toward high output power by variable height active structure near liquid nitrogen temperature operation2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      The 7th Annual World Congress of Nano Science and Technology-2017 (Nano S&T-2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Efficiency improvement of AlGaN UVC-LEDs using highly-reflective Ni/Al p-type electrode2017
    • Author(s)
      N. Maeda, M. Jo and H. Hirayama
    • Organizer
      The 44th International Symposium on Compound Semiconductors (ISCS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Effects of Ga supply on the growth of (11-22) AlN on m-plane (1-100) Sapphire substrates2017
    • Author(s)
      M. Jo and H. Hirayama
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS12)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
    • Author(s)
      K. Wang, T. T. Lin, W. Terashima and H. Hirayama
    • Organizer
      The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Improving EQE (10%) of AlGaN deep-UV LED using highly-reflective photonic ceystal (HR-PhC) on p-contact layer2017
    • Author(s)
      Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi and H. Hirayama
    • Organizer
      The International Workshop on UV Materials and Devices (IWUMD-2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      14th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] Variable height active structure design THz QCLs operating at 3.7 THz with the maximum operation temperature 145 K2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      The 44th International Symposium on Compound Semiconductors (ISCS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Current status and next challenges for GaN-based QCLs2017
    • Author(s)
      Ke Wang, W. Terashima, T. T. Lin and H. Hirayama
    • Organizer
      第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
    • Place of Presentation
      情報通信研究機構（東京都小金井市）
    • Year and Date
      2017-02-27
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] テラヘルツ量子カスケードレーザの進展と展望2017
    • Author(s)
      平山秀樹、寺嶋亘、林宗澤
    • Organizer
      レーザー学会
    • Place of Presentation
      徳島大学（徳島県徳島市）
    • Year and Date
      2017-01-07
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] 透明コンタクト層とレンズを用いたAlGaN深紫外LEDのWPE9.6％動作2017
    • Author(s)
      平山秀樹，鹿嶋行雄，松浦恵里子，高木秀樹，前田哲利，定昌史，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] 深紫外線LEDの開発2017
    • Author(s)
      平山秀樹
    • Organizer
      第4回皮膚光線治療推進の会セミナー
    • Place of Presentation
      御茶ノ水ソラシティカンファレンスセンター（東京都千代田区）
    • Year and Date
      2017-03-19
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      The 24th Congress of the International Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420

  • [Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
    • Author(s)
      T. T. Lin and H. Hirayama
    • Organizer
      The 24th Congress of the International Commission for Optics (ICO-24)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733

  • [Presentation] Over 10 % EQE AlGaN Deep-UV LED developed by using Transparent p-AlGaN Contact Layer2017
    • Author(s)
      H. Hirayama, T. Takano, Jun. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, I. Ohshima, T. Matsumoto and N. Kamata
    • Organizer
      SPIE Photonic West, Gallium Nitride Materials and Devices XII (OE107)