KOGANEMARU Masaaki 小金丸正明

… Alternative Names

Koganemaru Masaaki 小金丸正明

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Researcher Number	20416506
Affiliation (Current)	2025: 鹿児島大学, 理工学域工学系, 准教授
Affiliation (based on the past Project Information) *help	2019 – 2023: 鹿児島大学, 理工学域工学系, 准教授 2013: 福岡県産業, 科学技術振興財団 2009 – 2011: 福岡県工業技術センター, 機械電子研究所, 専門研究員
Review Section/Research Field	Principal Investigator Basic Section 18010:Mechanics of materials and materials-related / Materials/Mechanics of materials Except Principal Investigator Basic Section 21010:Power engineering-related / Materials/Mechanics of materials
Keywords	Principal Investigator 応力 / 有機基板 / ひずみ / シリコン / ピエゾ効果 / 極薄Siウェハの残留応力 / 電気特性 / 変形 / 有機半導体 / 有機半導体の機械的応力効果 … More / ゲートリーク電流 / 機械的応力効果 / ゲート絶縁膜 / 電気特性変動 / 機械的負荷 / 有機薄膜トランジスタ / デバイス設計・製造プロセス / 機械材料・材料力学 / 実験力学 / エレクトロニクス実装 / 電子デバイス・機器 … More Except Principal Investigator ヘテロジニアスインテフレーション / ３次元IC / ３次元集積回路 / GaN / 3次元パワーIC / パワーIC / GaNパワーデバイス / ヘテロジニアスインテグレーション / 3DIC / 3D パワーIC / 移動度 / デバイスシミュレーション / 電子移動度 / シリコン / pMOSFET / nMOSFET / 電気特性変動 / トランジスタ / 応力 / 半導体 / ひずみ効果 / 評価 / 物性 / プロセス / 材料設計 Less

極薄Siウェハのピエゾ効果に関する研究と有機基板へのフレキシブル実装の検討Principal Investigator
- Principal Investigator
  
  小金丸正明
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 18010:Mechanics of materials and materials-related
- Research Institution
  Kagoshima University
Study on heterogeneous integration technology for high power power IC
- Principal Investigator
  
  MATSUMOTO Satoshi
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  Kyushu Institute of Technology
Elucidation of mechanical factors in degradation of electrical performance of organic semiconductor devices under mechanical deformationPrincipal Investigator
- Principal Investigator
  
  Koganemaru Masaaki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 18010:Mechanics of materials and materials-related
- Research Institution
  Kagoshima University
Nano-mechanical investigation of the effects of mechanical strain on semiconductor devices
- Principal Investigator
  
  IKEDA Toru
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Materials/Mechanics of materials
- Research Institution
  Kagoshima University
  Kyoto University
A new method of nondestructive strain measurement for electronic packages using x-ray imagesPrincipal Investigator
- Principal Investigator
  
  KOGANEMARU Masaaki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Materials/Mechanics of materials
- Research Institution
  Fukuoka Industrial Technology Center

All 2022 2021 2020 2014 2013 2012 2011

All Journal Article Presentation

[Journal Article] Evaluation of Leakage Current and Leakage Path of Gate-Insulating Layer Used in Organic Thin-Film Transistors under Mechanical Loading2021
- Author(s)
  日髙功二，小金丸正明，関根智仁，宍戸信之，神谷庄司，三成剛生，池田徹，時任静士
- Journal Title
  
  Journal of The Japan Institute of Electronics Packaging
  
  Volume: 24 Issue: 6 Pages: 586-594
- DOI
  10.5104/jiep.JIEP-D-21-00015
- NAID
  130008082301
- ISSN
  1343-9677, 1884-121X
- Year and Date
  2021-09-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04093
[Journal Article] Examination of Residual Stress Measurement in Electronic Packages Using Phase-Shifted Sampling Moiré Method and X-Ray Images2014
- Author(s)
  Masaaki Koganemaru, Masakazu Uchino, Akihiro Ikeda, and Tanemasa Asano
- Journal Title
  
  Electronics System-Integration Technology Conference (ESTC), 2014
  
  Pages: 1-5
- DOI
  10.1109/estc.2014.6962827
- Data Source
  KAKENHI-PROJECT-21560109
[Journal Article] 樹脂封止された積層半導体チップの残留応力に起因する電気特性変動評価手法2013
- Author(s)
  松田和敏, 池田徹, 小金丸　正明，宮崎則幸
- Journal Title
  
  日本機械学会論文集 (A編)
  
  Volume: 第79巻, 第797号 Pages: 74-88
- NAID
  130003374587
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] 樹脂封止された積層半導体チップの残留応力に起因する電気特性変動評価手法2013
- Author(s)
  松田和敏, 池田徹, 小金丸正明, 宮崎則幸
- Journal Title
  
  日本機械学会論文集(A編)
  
  Volume: 第79巻,第797号 Pages: 74-88
- NAID
  130003374587
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] Device simulation for effecs of mechanical stress on electrical performances of NMOSFETs: The inpaacts of stress-induced change of intrinsic carriear density2013
- Author(s)
  Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki
- Journal Title
  
  The ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterPACK 2013)
  
  Volume: Proceedings
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] ドリフト拡散デバイスシミュレーションを用いた1軸負荷に起因するnMOSFET の電気特性変動評価手法2012
- Author(s)
  小金丸正明, 多田直弘, 池田徹, 宮崎則幸, 友景肇
- Journal Title
  
  エレクトロニクス実装学会誌
  
  Volume: 第15巻, 第6号 Pages: 483-491
- NAID
  10030878367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] ドリフト拡散デバイスシミュレーションを用いた1軸負荷に起因するnMOSFETの電気特性変動評価手法2012
- Author(s)
  小金丸正明，吉田圭佑，多田直弘，池田徹，宮崎則幸，友景肇
- Journal Title
  
  エレクトロニクス実装学会誌
  
  Volume: Vol. 15, No. 6 Pages: 483-491
- NAID
  10030878367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stress on n-Type Silicon Semiconductor Devices2011
- Author(s)
  Masaaki Koganemaru, Keisuke Yoshida, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Journal Title
  
  IEEE Trans. on Electron Devices
  
  Volume: Vol. 58, No.8 Pages: 2525-2536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors2011
- Author(s)
  Masaaki KOGANEMARU, Keisuke YOSHIDA, Naohiro TADA, u IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Journal Title
  
  Proceedings of The ASME 2011 Pacific Rim Technical Conference & Exposition on Packaging and Integration of Electronic and Photonic Systems, MEMS and NEMS (InterPACK 2011)
  
  Volume: IPACK2011-52150 Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Journal Article] Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stess on n-Type Silicon Semiconductor2011
- Author(s)
  Masaaki Koganemaru, Keisuke Yoshida, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: Vol.58,No.8 Pages: 2525-2536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] SOI-nMOSFETにおける機械的応力効果のゲート長さおよび負荷方向依存性のデバイスシミュレーション2022
- Author(s)
  塩田智基，小金丸正明，塩塚航生，松本聡，池田徹
- Organizer
  CMD2022 日本機械学会第35回計算力学講演会
- Data Source
  KAKENHI-PROJECT-21H01314
[Presentation] 有限要素法解析とラマン分光法によるパワーデバイス用GaN-on-Si構造の応力場評価2022
- Author(s)
  尾ノ上義喜，小金丸正明，松本聡，池田徹
- Organizer
  CMD2022 日本機械学会第35回計算力学講演会
- Data Source
  KAKENHI-PROJECT-21H01314
[Presentation] 有機薄膜トランジスタの曲げおよび面外圧縮負荷による電気特性変動2021
- Author(s)
  中島太聖，中城朋也，小金丸正明，関根智仁，宍戸信之，神谷庄司，三成剛生，池田徹，時任静士
- Organizer
  27th Symposium on "Microjoining and Assembly Technology in Electronics" (Mate 2021)
- Data Source
  KAKENHI-PROJECT-19K04093
[Presentation] 有機薄膜トランジスタ用Ag配線の1軸引張り負荷による抵抗値変動2021
- Author(s)
  中島太聖，小金丸正明，関根智仁，宍戸信之，神谷庄司，三成剛生，池田徹，時任静士
- Organizer
  第31回マイクロエレクトロニクスシンポジウム
- Data Source
  KAKENHI-PROJECT-19K04093
[Presentation] 薄膜有機トランジスタ用ゲート絶縁層の機械的負荷下での絶縁性能評価2020
- Author(s)
  日髙功二，小金丸正明，関根智仁，宍戸信之，神谷庄司，三成剛生，池田徹，時任静士
- Organizer
  マイクロエレクトロニクスシンポジウム2020（MES2020）
- Data Source
  KAKENHI-PROJECT-19K04093
[Presentation] Device simulation for effecs of mechanical stress on electrical performances of NMOSFETs: The inpaacts of stress-induced change of intrinsic carriear density2013
- Author(s)
  Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki
- Organizer
  The ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterPACK 2013)
- Place of Presentation
  Burlingame, CA, USA
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Device simulation for effecs of mechanical stress on electrical performances of NMOSFETs : The inpaacts of stress-induced change of intrinsic carriear density2013
- Author(s)
  Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki
- Organizer
  The ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterPACK 2013)
- Place of Presentation
  Burlingame, CA, USA
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] デバイス内部の応力集中と真性キャリア濃度変化を考慮したnMOSFET の電気特性変動でバイスシミュレーション2012
- Author(s)
  多田直弘, 小金丸正明, 池田徹, 宮崎則幸, 友景肇
- Organizer
  第22回マイクロエレクトロニクスシンポジウム (MES2012)
- Place of Presentation
  堺市
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Numerical Study on Impact of Mechanical Stress in the Regions of High Current Density in n-type MOS Devices2012
- Author(s)
  Masaaki KOGANEMARU, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  4th Electronics System Integration technologies Conference (ESTC 2012)
- Place of Presentation
  アムステルダム
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] nMOSFET 内部の応力分布と電気特性との相関に関するデバイスシミュレーション2012
- Author(s)
  小金丸正明, 多田直弘, 池田徹, 宮崎則幸, 友景肇
- Organizer
  日本機械学会第25回計算力学講演会
- Place of Presentation
  神戸市
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Numerical Evaluation of Correlation between Stress Concentration and Electronic Characteristics on nMOSFETs2012
- Author(s)
  Naohiro Tada, Masaaki Koganemaru, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Organizer
  International Computational Mechanics Symposium 2012 (ICMS2012)
- Place of Presentation
  Kobe Japan
- Year and Date
  2012-10-11
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Numerical Study on Impact of Mechanical Stress in the Regions of High Current Density in n-type MOS Devices2012
- Author(s)
  Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Organizer
  4th Electronics System Integration technologies Conference (ESTC 2012)
- Place of Presentation
  Amsterdam, The Netherlands
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] デバイス内部の応力集中と真性キャリア濃度変化を考慮したnMOSFETの電気特性変動でバイスシミュレーション2012
- Author(s)
  多田直弘, 小金丸正明, 池田　徹, 宮崎則幸, 友景　肇
- Organizer
  第22回マイクロエレクトロニクスシンポジウム (MES2012)
- Place of Presentation
  堺市大阪府立大学
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] nMOSFET 内部の応力分布と電気特性との相関に関するデバイスシミュレーション2012
- Author(s)
  小金丸正明, 多田直弘, 池田徹, 宮崎則幸, 友景肇
- Organizer
  日本機械学会第25回計算力学講演会講演論文集
- Place of Presentation
  神戸市
- Year and Date
  2012-10-06
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Numerical Evaluation of Correlation between Stress Concentration and Electronic Characteristics on nMOSFETs2012
- Author(s)
  Naohiro TADA, Masaaki KOGANEMARU, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  International Computational Mechanics Symposium 2012 (ICMS2012)
- Place of Presentation
  神戸市
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Device Simulation of Stress Effect on Electrical Performances of Semiconductor Devices : Impact of Mechanical Stress in the Region of High Current Density in the Devices2012
- Author(s)
  Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Organizer
  10th World Congress on Computational Mechanics
- Place of Presentation
  Sao Paulo, Brazil
- Year and Date
  2012-07-12
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Device Simulation of Stress Effect on Electrical Performances of Semiconductor Devices : Impact of Mechanical Stress in the Region of High Current Density in the Devices2012
- Author(s)
  Masaaki KOGANEMARU, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  10th World Congress on Computational Mechanics
- Place of Presentation
  サンパウロ
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] デバイスシミュレーションによるnMOSFETへの一軸応力負荷の影響評価2011
- Author(s)
  多田直弘, 小金丸正明, 池田徹, 宮崎則幸, 友景肇
- Organizer
  日本機械学会第24回計算力学講演会
- Place of Presentation
  岡山市
- Year and Date
  2011-10-08
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors2011
- Author(s)
  Masaaki KOGANEMARU, Keisuke YOSHIDA, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  ASME 2011 Pacific Rim Technical Conference & Exposition on Packaging and Integration of Electronic and Photonic Systems, MEMS and NEMS
- Place of Presentation
  ポートランド
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Numerical Study on Impact of Uniaxial Stress on n-type Silicon MOS Devices2011
- Author(s)
  Masaaki KOGANEMARU, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  The13th International Conference on Electronics Materials and Packaging (EMAP2011)
- Place of Presentation
  京都市
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Evaluation of Uniaxial-Stress Effects on DC Characteristics of n-type Metal Oxide Semiconductor Field Effect Transistors2011
- Author(s)
  Masaaki KOGANEMARU, Keisuke YOSHIDA, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI and Hajime TOMOKAGE
- Organizer
  International Conference on Advanced Technology in Experimental Mechanics (ATEM’11)(招待講演)
- Place of Presentation
  神戸市
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] nMOSFETにおける１軸応力の影響評価2011
- Author(s)
  小金丸正明，多田直弘，池田　徹，宮崎則幸，友景　肇
- Organizer
  第21回マイクロエレクトロニクスシンポジウム (MES2011)
- Place of Presentation
  大阪府吹田市
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] nMOSFETにおける1軸応力の影響評価2011
- Author(s)
  小金丸正明, 多田直弘, 池田徹, 宮崎則幸, 友景肇
- Organizer
  第21回マイクロエレクトロニクスシンポジウム (MES2011)
- Place of Presentation
  吹田市
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] Evaluation of Uniaxial-Stress Effects on DC Characteristics of n-type Metal Oxide Semiconductor Field Effect Transistors2011
- Author(s)
  Masaaki Koganemaru, Keisuke Yoshida, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Organizer
  International Conference on Advanced Technology in Experimental Mechanics (ATEM'11)
- Place of Presentation
  Kobe, Japan
- Year and Date
  2011-09-21
- Data Source
  KAKENHI-PROJECT-23656083
[Presentation] The ASME 2011 Pacific Rim Technical Conference & Exposition on Packaging and Integration of Electronic and Photonic Systems2011
- Author(s)
  Masaaki Koganemaru, Keisuke Yoshida, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki and Hajime Tomokage
- Organizer
  MEMS and NEMS (InterPACK 2011)
- Place of Presentation
  Portland, USA
- Year and Date
  2011-07-06
- Data Source
  KAKENHI-PROJECT-23656083

1. IKEDA Toru (40243894)

# of Collaborated Projects: 2 results

# of Collaborated Products: 29 results
2. UCHINO Masakazu (30416507)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
3. ITOHIRA Keiichi (90463497)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. MIYAZAKI Noriyuki (10166150)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. ASANO Tanemasa (50126306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. MATSUMOTO Satoshi (10577282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. 新海聡子 (90374785)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KOGANEMARU Masaaki 小金丸 正明

Koganemaru Masaaki 小金丸 正明

Research Projects

Research Products

Co-Researchers

極薄Siウェハのピエゾ効果に関する研究と有機基板へのフレキシブル実装の検討Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on heterogeneous integration technology for high power power IC

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Elucidation of mechanical factors in degradation of electrical performance of organic semiconductor devices under mechanical deformationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nano-mechanical investigation of the effects of mechanical strain on semiconductor devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A new method of nondestructive strain measurement for electronic packages using x-ray imagesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Evaluation of Leakage Current and Leakage Path of Gate-Insulating Layer Used in Organic Thin-Film Transistors under Mechanical Loading2021

Author(s)

Journal Title

DOI

NAID

ISSN

Year and Date

Language

Data Source

[Journal Article] Examination of Residual Stress Measurement in Electronic Packages Using Phase-Shifted Sampling Moiré Method and X-Ray Images2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 樹脂封止された積層半導体チップの残留応力に起因する電気特性変動評価手法2013

Author(s)

Journal Title

NAID

Data Source

[Journal Article] 樹脂封止された積層半導体チップの残留応力に起因する電気特性変動評価手法2013

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Device simulation for effecs of mechanical stress on electrical performances of NMOSFETs: The inpaacts of stress-induced change of intrinsic carriear density2013

Author(s)

Journal Title

Data Source

[Journal Article] ドリフト拡散デバイスシミュレーションを用いた1軸負荷に起因するnMOSFET の電気特性変動評価手法2012

Author(s)

Journal Title

NAID

Data Source

[Journal Article] ドリフト拡散デバイスシミュレーションを用いた1軸負荷に起因するnMOSFETの電気特性変動評価手法2012

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stress on n-Type Silicon Semiconductor Devices2011

Author(s)

Journal Title

Data Source

[Journal Article] Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors2011

Author(s)

Journal Title

KOGANEMARU Masaaki 小金丸正明

Koganemaru Masaaki 小金丸正明