ICHIMURA Masaya 市村正也

… Alternative Names

Ichimura Masaya 市村正也

市村正也イチムラマサヤ

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Researcher Number	30203110
Other IDs
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Affiliation (Current)	2025: 名古屋工業大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2018 – 2023: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2013 – 2016: 名古屋工業大学, 工学(系)研究科(研究院), 教授 2008 – 2010: Nagoya Institute of Technology, 工学研究科, 教授 2007: Nagoya Institute of Technology, Graduate School, Professor 2006 – 2007: 名古屋工業大学, 大学院工学研究科, 教授 … More 2004 – 2006: 名古屋工業大学, 工学研究科, 教授 2004 – 2005: Nagoya Institute of Technology, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 2003: 名古屋工業大学, 工学研究科, 助教授 2002: 名古屋工業大学, 工学部・電気情報工学科, 助教授 2000: Faculty of Engineering, Electrical and Computer Engineering, Nagoya Institute of Technology Associate Prof., 工学部, 助教授 1998 – 1999: 名古屋工業大学, 共同研究センター, 助教授 1995: 名古屋工業大学, 共同研究センター, 助教授 1992: 名古屋工業大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related / Basic Section 21050:Electric and electronic materials-related / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electron device/Electronic equipment / Electronic materials/Electric materials Except Principal Investigator 電子デバイス・機器工学 / Applied optics/Quantum optical engineering / General applied physics / Applied physics, general
Keywords	Principal Investigator 電気化学堆積 / pn接合 / 太陽電池 / 伝導型制御 / 酸化スズ / 光化学堆積 / 化学堆積 / 価電子制御 / 薄膜堆積 / ドーピング … More / 水酸化マグネシウム / 水酸化物 / 酸化鉄 / electrode pattern / gold thin film / oxide thin film / semiconductor thin film / gas sensor / solar cell / photochemical deposition / 硫化亜鉛 / 透明導電膜 / CdZnS / ZnS / 電極パターン形成 / 金薄膜 / 酸化物薄膜 / 半導体薄膜 / ガスセンサー / 光化学堆積法 / ヘテロ接合 / ワイドギャップ半導体 / p型半導体 / ワイドギャップ / CuZnS / 原子間力顕微鏡 / 紫外線照射 / 水素センサー / プロセスシミュレーション / 拡がり抵抗測定 / SOI / 不純物拡散 / 光伝導 / 硫化カドミウム / フォトルミネッセンス / ラマン分光 / 相互拡散 / 格子不整 / ヘテロエピタキシー / ラマン分光法 … More Except Principal Investigator new donor / buried oxide / 埋込酸化膜 / SOI / プロセスシミュレータ / 不純物拡散 / 埋込み酸化膜 / 極薄SOI / シリコンLSI / thin films / ZnO / wide gap oxide / terahertz radiation / ワイドギャップ / 酸化物薄膜 / 光学素子 / テラヘルツ / pair diffusion model / process simulator / recombination velocity of point defect density / carrier density distribution / μ-PCD method / SOI substrate / アンチモン / ひ素 / ニュードナー / 耐圧 / 界面電荷密度 / キャリア分布 / 拡散モデル / P拡散 / B拡散 / 発生ライフタイム / 界面再結合速度 / 対拡散モデル / 点欠陥再結合速度 / キャリア濃度分布 / μ-PCD法 / 埋め込み酸化膜 / SOI基板 / process simulation / impurity diffusion / spreading resistance / carrier concentration / active layer / ultra thin SOI / silicon LSI / シミュレーションモデル / 低消費電力LSI / LSI / 格子間Si / シュミレーションモデル / シリコン / プロセスシミュレーション / 拡がり抵抗法 / キャリア濃度 / 活性層 / X字状成長 / 低温成長 / 直接成長 / グラフェン / Ｘ字状成長 / フォースセンサー / ピエゾ効果 / ZnOナノロッド / 還元作用 / 酸化物 / プラズマCVD法 / カーボンナノチューブ Less

Valence control of magnesium hydroxide: possibility of hydroxide electronicsPrincipal Investigator
- Principal Investigator
  
  市村正也
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related
- Research Institution
  Nagoya Institute of Technology
Electrochemically deposited pn-junction solar cells based on iron oxidePrincipal Investigator
- Principal Investigator
  
  Ichimura Masaya
- Project Period (FY)
  2018 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nagoya Institute of Technology
Study on high sensitive force sensor using a piezo-effect occurred in ZnO nano-rods synthesized controlling their growth mode
- Principal Investigator
  
  Ichikawa Yo
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  General applied physics
- Research Institution
  Nagoya Institute of Technology
Novel p-type wide-gap semiconductor CuxZnySPrincipal Investigator
- Principal Investigator
  
  Ichimura Masaya
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical dopingPrincipal Investigator
- Principal Investigator
  
  ICHIMURA Masaya
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
Study on terahertz-radiation device using wide-gap oxide thin films
- Principal Investigator
  
  ICHIKAWA Yo
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Nagoya Institute of Technology
カーボンナノチューブのマイクロ・アクチュエーターへの展開
- Principal Investigator
  
  Ichikawa Yo
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied physics, general
- Research Institution
  Nagoya Institute of Technology
Novel technique of thin film deposition for functional materials: photochemical depositionPrincipal Investigator
- Principal Investigator
  
  ICHIMURA Masaya
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Institute of Technology
Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIs
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology
ナノメータLSI用離散的拡散シミュレーション技術の研究Principal Investigator
- Principal Investigator
  
  市村正也
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya Institute of Technology
Modeling of Impurity Diffusion in SOI Substrates for Future LSIs
- Principal Investigator
  
  ARAI Eisuke
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Nagoya Institute of Technology
電気化学堆積法によるCdS薄膜の物性評価と光電子素子への応用Principal Investigator
- Principal Investigator
  
  市村正也
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya Institute of Technology
顕微ラマン分光によるヘテロエピタキシャル成長層の歪緩和の研究Principal Investigator
- Principal Investigator
  
  市村正也
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya Institute of Technology

[Journal Article] Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films2024
- Author(s)
  M. Ichimura, C. Baixian, T. Li
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 63 Issue: 1 Pages: 018001-018001
- DOI
  10.35848/1347-4065/ad1423
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K05268
[Journal Article] Theoretical study of doping in GaOOH for electronics applications2023
- Author(s)
  M. Ichimura
- Journal Title
  
  Electron. Mater.
  
  Volume: 4 Issue: 4 Pages: 148-157
- DOI
  10.3390/electronicmat4040013
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K05268
[Journal Article] Fabrication of Transparent ZnO/Cu-Mg(OH)2 Heterojunction Diodes by Electrochemical Deposition2022
- Author(s)
  M. Ichimura, M. Tanaka, T. Li
- Journal Title
  
  Solid St. Electron.
  
  Volume: 198 Pages: 108479-108479
- DOI
  10.1016/j.sse.2022.108479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K05268
[Journal Article] Pulse electrochemical deposition of Cu-doped p-type Fe-O thin films and fabrication of n-Fe-O/p-Fe-O solar cells2020
- Author(s)
  Takayanagi Ryohei、Ichimura Masaya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 11 Pages: 111002-111002
- DOI
  10.35848/1347-4065/abc49c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04232
[Journal Article] Fabrication of photovoltaic FeSxOy/ZnO heterostructures by electrochemical deposition2019
- Author(s)
  Ji Wen、Ichimura Masaya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 5 Pages: 050922-050922
- DOI
  10.7567/1347-4065/ab1975
- NAID
  210000155744
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04232
[Journal Article] Electrochemical deposition of Cu-doped p-type iron oxide thin films2018
- Author(s)
  S. Kobayashi and M. Ichimura
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 33 Issue: 10 Pages: 105006-105006
- DOI
  10.1088/1361-6641/aad76a
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04232
[Journal Article] Deposition of p-type wide-gap semiconductor CuxZnyS2017
- Author(s)
  M. Ichimura
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1788 Pages: 020005-020005
- DOI
  10.1063/1.4968253
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method2016
- Author(s)
  Bayingaerdi Tong and M. Ichimura
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 9 Pages: 098004-098004
- DOI
  10.7567/jjap.55.098004
- NAID
  210000147086
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Effects of annealing on properties of electrochemically deposited CuxZnyS thin films2016
- Author(s)
  Bayingaerdi Tong and M. Ichimura
- Journal Title
  
  Transaction of Material Research Society of Japan
  
  Volume: 41 Pages: 0-0
- NAID
  130005263765
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Effects of annealing on properties of electrochemically deposited Cu<sub>x</sub>Zn<sub>y</sub>S thin films2016
- Author(s)
  Bayingaerdi Tong and M. Ichimura
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: 41 Issue: 3 Pages: 255-258
- DOI
  10.14723/tmrsj.41.255
- NAID
  130005263765
- ISSN
  1382-3469, 2188-1650
- Language
  English
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Heterojunctions Based on Photochemically Deposited CuxZnyS and Electrochemically Deposited ZnO2015
- Author(s)
  M. Ichimura and Y. Maeda
- Journal Title
  
  Solid State Electronics
  
  Volume: 107 Pages: 8-10
- DOI
  10.1016/j.sse.2015.02.016
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition2015
- Author(s)
  M. Ichimura and Y. Maeda
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 12 Issue: 6 Pages: 504-507
- DOI
  10.1002/pssc.201400229
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Conduction type of nonstoichiometric alloy semiconductor CuxZnyS deposited by the photochemical deposition method2015
- Author(s)
  M. Ichimura and Y. Maeda
- Journal Title
  
  Thin Solid Films
  
  Volume: 594 Pages: 277-281
- DOI
  10.1016/j.tsf.2015.04.071
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420286
[Journal Article] Properties of Gas Sensors Based on Photochemically Deposited Nanocrystalline SnO_2 Films2010
- Author(s)
  M.Ichimura, Aodengbaoleer, T.Sueyoshi
- Journal Title
  
  Phys.Status Solidi C Vol.7
  
  Pages: 1168-1171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560323
[Journal Article] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films2010
- Author(s)
  M.Ichimura, Aodengbaoleer, T.Sueyoshii
- Journal Title
  
  Physica Status Solidi C 7
  
  Pages: 1168-1171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560323
[Journal Article] Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques2009
- Author(s)
  M.Ichimura, T.Sueyoshi
- Journal Title
  
  Japanese Journal of Applied Physics 48
  
  Pages: 15503-15503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560323
[Journal Article] Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques2009
- Author(s)
  M.Ichimura, T.Sueyoshi
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.48
  
  Pages: 15503-15503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560323
[Journal Article] Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited CdS and Cd_<1-x>Zn_xS2007
- Author(s)
  M.Gunasekaran, M.Ichimura
- Journal Title
  
  Solar Energy Mater. Solar Cells (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Optical and Electrical Characterization of Photochemically Deposited CdS and Cd_<1-x>Zn_xS Alloys2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  J. Electrochem. Soc. Vol.153 No.6
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Preparation of ternary Cd_<1-x>Zn_xS alloy by photochemical deposition (PCD) and its application to photovoltaic devices2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  Phys. Stat. Sol. (c) Vol.3, No.8
  
  Pages: 2656-2660
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Preparation of ternary Cdi_<1-x>Zn_xS alloy by photochemical deposition (PCD) and its application to photovoltaic devices2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  Phys.Stat.Sol (c) Vol.3, No.8
  
  Pages: 2656-2660
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Room-Temperature Hydrogen Sensing Properties of SnO_2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods2006
- Author(s)
  D.Ito, M.Ichimura
- Journal Title
  
  Jpn. J. Appl. Phys. Vol. 45 No.9
  
  Pages: 7094-7096
- NAID
  10018246466
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Optical and Electrical Characterization of Photochemically Deposited CdS and Cdi_<1-x>Zn_xS Alloys2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  J.Electrochem.Soc. Vol.153
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Room-Temperature Hydrogen Sensing Properties of SnO_2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods2006
- Author(s)
  D.Ito, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.45
  
  Pages: 7094-7096
- NAID
  10018246466
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Preparation of ternary Cd_<1-x>Zn_xS alloy by photochemical deposition (PCD) and its application to photovoltaic devices2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  Phys. Stat. Sol. (c) Vo1.3, No. 8
  
  Pages: 2656-2660
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Optical and Electrical Characterization of Photochemically Deposited CdS and Cd_<1-x>Zn_xS Alloys2006
- Author(s)
  M.Gunasekaran, P.Ramasamy, M.Ichimura
- Journal Title
  
  J. Electrochem. Soc. Vol.153 NO.6
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Deposition of Cdi_<1-x>Zn_xS (0<x<1) Alloys by Photochemical Deposition Technique2005
- Author(s)
  M.Gunasekaran, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44
  
  Pages: 7345-7350
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Deposition of Cd_<1-x>Zn_xS(0 <x <1) Alloys by Photochemical Deposition Technique2005
- Author(s)
  M.Gunasekaran, M.Ichimura
- Journal Title
  
  Japanese Journal of Applied Physics 44(10)
  
  Pages: 7345-7345
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Deposition of Cd_<1-x>Zn_xS (0<x<l) Alloys by Photochemical Deposition Technique2005
- Author(s)
  M.Gunasekaran, M.Ichimura
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.44,No.10
  
  Pages: 7345-7350
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Photochemical Deposition of ZnS Thin Films by Intermittent Illumination2004
- Author(s)
  M.Ichimura, R.Kobayashi, T.Miyawaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43, No.9AB
- NAID
  10013572911
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Conduction type change with annealing in thin silicon-on-insulator wafers2004
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Solid-State Electronics 48
  
  Pages: 1249-1252
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Photochemical Deposition of ZnS Thin Films by Intermittent Illumination2004
- Author(s)
  M.Ichimura, R.Kobayashi, T.Miyawaki
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.43,No.9
- NAID
  10013572911
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Fabrication of SnO_2 Thin Films by a Photochemical Deposition Method2004
- Author(s)
  M.Ichimura, K.Shibayama, K.Masui
- Journal Title
  
  Thin Solid Films Vol.466, No.1-2
  
  Pages: 34-34
- Data Source
  KAKENHI-PROJECT-16560006
[Journal Article] Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field2003
- Author(s)
  T.Kuwayama, M.Ichimura, E.Arai
- Journal Title
  
  Appl.Phys.Letters 83
  
  Pages: 928-930
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusin Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulaor2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb Diffusion in Thin Silicon-on-Insulator Wafers2003
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 4282-4283
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Sb Pile-up at Oxide and Si Interface during Drive-in Process after Predeposition Using Doped Oxide Source2003
- Author(s)
  T.Ichino, H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1139-1144
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator2003
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- NAID
  80015914766
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method2002
- Author(s)
  M.Ichimura, S.Ito, E.Arai
- Journal Title
  
  Solid-State Electronics 46
  
  Pages: 545-553
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structvires and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb diffusion profiles in thin silicon-on-insulator2002
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Extended Abstracts of the 3^<rd> International Workshop on Junction Technology
  
  Pages: 89-90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Si and Silicon-on-Insulator2002
- Author(s)
  E.Arai, D.Iida, H.Asai, Y.Ieki, H.Uchida, M.Ichimura
- Journal Title
  
  Jpn.J.Appl.Phys. 42
  
  Pages: 1503-1510
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality2002
- Author(s)
  H.Uchida, M.Ichimura, E.Arai
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4436-4441
- NAID
  110006341535
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] As and Sb diffusion profiles in thin silicon-on-insulator wafers2002
- Author(s)
  Y.Shibata, M.Ichimura, E.Arai
- Journal Title
  
  Extended Abstracts of the 3^<rd> International Workshop on Junction Technology
  
  Pages: 89-90
- NAID
  130004531037
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550323
[Journal Article] Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited CdS and Cdi_<1-x>Zn_xS
- Author(s)
  M.Gunasekaran, M.Ichimura
- Journal Title
  
  Solar Energy Mater.Solar Cells (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560006
[Presentation] Dip-dry Deposition of Semiconducting Al-O Thin Films2023
- Author(s)
  M. Ichimura, C. Baixian, T. Li
- Organizer
  Grand Meeting MRM&ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K05268
[Presentation] Possibility of Doping in GaOOH2023
- Author(s)
  M. Ichimura
- Organizer
  Grand Meeting MRM&ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K05268
[Presentation] Fe2O3-based pn junction solar cells with a Mg(OH)2 interface layer2022
- Author(s)
  M. Ichimura, R. Takayanagi
- Organizer
  Symposium on Earth-Abundant Materials for Future Photovoltaics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04232
[Presentation] 中間層に水酸化マグネシウム薄膜を用いた酸化鉄薄膜太陽電池の作製2022
- Author(s)
  村上諒、市村正也
- Organizer
  2022年応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04232
[Presentation] Fe2O3-based pn junction solar cell fabricated by electrochemical deposition2019
- Author(s)
  S. Kobayashi and M. Ichimura
- Organizer
  Materials Research Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04232
[Presentation] 電気化学堆積法による酸化鉄薄膜太陽電池の作製2019
- Author(s)
  高柳、市村
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04232
[Presentation] 酒石酸添加三段パルス電気化学堆積によるFeSxOy薄膜の作製とZnO/FeSxOyヘテロ接合太陽電池の作製2018
- Author(s)
  W. Ji and M. Ichimura
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-18K04232
[Presentation] Deposition of p-type wide-gap semiconductor CuxZnyS2016
- Author(s)
  M. Ichimura
- Organizer
  Int. Conf. Eng. Sci. Nanotechnol.
- Place of Presentation
  Solo, Indonesia
- Year and Date
  2016-08-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Photochemical Deposition of p-type wide-gap semiconductor CuxZnyS2016
- Author(s)
  Masaya Ichimura
- Organizer
  Intl. Conf. Engineering, Science and Nanotechnology
- Place of Presentation
  Solo, インドネシア
- Year and Date
  2016-08-03
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Stability of electrochemically deposited Cu-Zn-S-O thin films2015
- Author(s)
  Bayingaerdi Tong and Masaya Ichimura
- Organizer
  The 25th Annual Meeting of MRS-J A1:Functional Oxide Materials Symposium
- Place of Presentation
  横浜
- Year and Date
  2015-12-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Fabrication of transparent CuxZnyS/ZnS heterojunction diodes2014
- Author(s)
  Y. Maeda and M. Ichimura
- Organizer
  Int. Conf. Ternary and Multinary Compounds　2014.9.2
- Place of Presentation
  新潟
- Year and Date
  2014-09-01
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Heterojunctions Based on Photochemically Deposited CuxZnyS and Electrochemically Deposited ZnO2014
- Author(s)
  M. Ichimura, and Y. Maeda
- Organizer
  IUMRS Int. Conf. in Asia （ICA) 2014
- Place of Presentation
  台北
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Conduction type of nonstoichiometric alloy semiconductor CuxZnyS deposited by the photochemical deposition method2014
- Author(s)
  M. Ichimura, and Y. Maeda
- Organizer
  Int. Symp. Transparent Conductive Materials　2014
- Place of Presentation
  ギリシャ、クレタ島
- Year and Date
  2014-11-10
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] UV irradiation effects on hydrogen sensors based on SnO_2 thin films fabricated by the photochemical deposition2010
- Author(s)
  Dengbaoleer An, M.Ichimura
- Organizer
  Renewable Energy 2010
- Place of Presentation
  横浜
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-20560323
[Presentation] UV irradiation effects on hydrogen sensors based on SnO_2 thin films fabricated by the photochemical deposition2010
- Author(s)
  Dengbaoleer Ao, Masaya Ichimura
- Organizer
  RENEWABLE ENERGY 2010
- Place of Presentation
  横浜
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-20560323
[Presentation] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films2009
- Author(s)
  M.Ichimura
- Organizer
  23rd Int. Conf. Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, Netherlands
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-20560323
[Presentation] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films2009
- Author(s)
  M.Ichimura, Aodengbaoleer, T.Sueyoshi
- Organizer
  23rd Int.Conf Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Utrecht, Netherlands
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PROJECT-20560323
[Presentation] Photochemical Deposition of Transparent p-type Alloy CuxZnyS and Its Applicaiton for Heterostructure Photovoltaic Cells
- Author(s)
  M. Ichimura, Mandula, and Y. Kai
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] 光化学堆積法による透明p型CuxZnyS 薄膜の作製及びヘテロ接合への応用
- Author(s)
  前田、市村
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25420286
[Presentation] Photochemical Deposition of Oxide and Sulfide Semiconductor Thin Films and Their Application for Gas Sensors and Solar Cells
- Author(s)
  M. Ichimura
- Organizer
  IUMRS-Int. Conf. Electronic Materials 2014
- Place of Presentation
  台北
- Invited
- Data Source
  KAKENHI-PROJECT-25420286

1. UCHIDA Hideo (10293739)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
2. ARAI Eisuke (90283473)

# of Collaborated Projects: 3 results

# of Collaborated Products: 12 results
3. Ichikawa Yo (10314072)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. SHAO Chunlin (20242828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. YOSHIDA Masayuki (80038984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. KATO Masashi (80362317)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SARUKURA Nobuhiko (40260202)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 宇佐美晶 (90024265)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 和田隆夫 (60023040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 内藤隆 (80242907)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ICHIMURA Masaya 市村 正也

Ichimura Masaya 市村 正也

市村 正也 イチムラ マサヤ

Research Projects

Research Products

Co-Researchers

Valence control of magnesium hydroxide: possibility of hydroxide electronicsPrincipal Investigator

Principal Investigator

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Electrochemically deposited pn-junction solar cells based on iron oxidePrincipal Investigator

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Study on high sensitive force sensor using a piezo-effect occurred in ZnO nano-rods synthesized controlling their growth mode

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Novel p-type wide-gap semiconductor CuxZnySPrincipal Investigator

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Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical dopingPrincipal Investigator

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Study on terahertz-radiation device using wide-gap oxide thin films

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カーボンナノチューブのマイクロ・アクチュエーターへの展開

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Novel technique of thin film deposition for functional materials: photochemical depositionPrincipal Investigator

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Crystallographic Evaluation of Ultrathin SOI Substrates and Impurity Diffusion Modeling for Nanometer LSIs

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ナノメータLSI用離散的拡散シミュレーション技術の研究Principal Investigator

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Modeling of Impurity Diffusion in SOI Substrates for Future LSIs

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電気化学堆積法によるCdS薄膜の物性評価と光電子素子への応用Principal Investigator

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Research Institution

顕微ラマン分光によるヘテロエピタキシャル成長層の歪緩和の研究Principal Investigator

Principal Investigator

Project Period (FY)

ICHIMURA Masaya 市村正也

Ichimura Masaya 市村正也

市村正也イチムラマサヤ