TANAKA Atsushi 田中敦之

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Tanaka Atsushi 田中敦之

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Researcher Number	30774286
Other IDs
Affiliation (Current)	2025: 名古屋大学, 未来材料・システム研究所, 特任准教授
Affiliation (based on the past Project Information) *help	2017 – 2024: 名古屋大学, 未来材料・システム研究所, 特任准教授
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator 漏れ電流 / 転位 / パワーデバイス / 窒化ガリウム / GaN / 電界強度分布 / 電界分布計測 / 多光子PL-OBIC / キャリア分布計測 / OBIC … More / 多光子PL / 衝突電離係数 / 電子デバイス・機器 / 通電劣化 / ダイオード … More Except Principal Investigator GaN / Microwave annealing / SJダイオード / Mgのメモリー効果 / Mgの偏析 / 高速エピタキシャル成長 / パワーデバイス / SJ / HVPE / SJ構造 / Mgドーピング / HVPE法 / pn接合 / 窒化物半導体 Less

Investigation of the annealing response of GaN using single-mode microwaves and development of an annealing process
- Principal Investigator
  
  鄭恵貞
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya University
High speed growth of pn junction by HVPE for fabrication of SJ diod
- Principal Investigator
  
  Honda Yoshio
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Direct observation of electric field distribution in GaN power devicesPrincipal Investigator
- Principal Investigator
  
  Tanaka Atsushi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nagoya University
Study about the influence of dislocation on devices for practical application of GaN power devicesPrincipal Investigator
- Principal Investigator
  
  Tanaka Atsushi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University

All 2023 2022 2021 2020 2019 2018 2017

All Journal Article Presentation

[Journal Article] Reverse leakage mechanism of dislocation-free GaN vertical p-n diodes2023
- Author(s)
  Woong Kwon, Seiya Kawasaki, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Hirotaka Ikeda, Kenji Iso, Hiroshi Amano
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: early access Issue: 7 Pages: 1-1
- DOI
  10.1109/led.2023.3274306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04578
[Journal Article] Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method2020
- Author(s)
  Tanaka Atsushi、Inotsume Syo、Harada Shunta、Hanada Kenji、Honda Yoshio、Ujihara Toru、Amano Hiroshi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900553-1900553
- DOI
  10.1002/pssb.201900553
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] Direct evidence of Mg diffusion through threading mixed dislocations in GaN p?n diodes and its effect on reverse leakage current2019
- Author(s)
  Usami Shigeyoshi、Mayama Norihito、Toda Kazuya、Tanaka Atsushi、Deki Manato、Nitta Shugo、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 114 Issue: 23 Pages: 232105-232105
- DOI
  10.1063/1.5097767
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown2019
- Author(s)
  Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Pages: 2-2
- NAID
  120006643281
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] V-shaped dislocations in a GaN epitaxial layer on GaN substrate2019
- Author(s)
  Tanaka Atsushi、Nagamatsu Kentaro、Usami Shigeyoshi、Kushimoto Maki、Deki Manato、Nitta Shugo、Honda Yoshio、Bockowski Michal、Amano Hiroshi
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 9 Pages: 095002-095002
- DOI
  10.1063/1.5114866
- NAID
  120006877869
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates2018
- Author(s)
  Atsushi Tanaka, yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 215 Pages: 1700525-1700525
- NAID
  120006498158
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate2018
- Author(s)
  Usami Shigeyoshi、Ando Yuto、Tanaka Atsushi、Nagamatsu Kentaro、Deki Manato、Kushimoto Maki、Nitta Shugo、Honda Yoshio、Amano Hiroshi、Sugawara Yoshihiro、Yao Yong-Zhao、Ishikawa Yukari
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 18 Pages: 182106-182106
- DOI
  10.1063/1.5024704
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K17808, KAKENHI-PROJECT-18J12845
[Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate2018
- Author(s)
  Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Pages: 182106-182106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] Comparing high-purity c-and m-plane GaN layers for Schottky barrier diodes Grown homoepitaxially by metalorganic vapor phase epitaxy2018
- Author(s)
  Kentaro Nagamatsu, Yuto Ando, Zheng Ye, Osmane Barry, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Pages: 105501-105501
- NAID
  210000149720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K17808
[Journal Article] Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes2017
- Author(s)
  Sang Liwen、Ren Bing、Sumiya Masatomo、Liao Meiyong、Koide Yasuo、Tanaka Atsushi、Cho Yujin、Harada Yoshitomo、Nabatame Toshihide、Sekiguchi Takashi、Usami Shigeyoshi、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 12 Pages: 122102-122102
- DOI
  10.1063/1.4994627
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Reverse leakage mechanism of 900V GaN vertical p-n junction diodes with and without threading dislocations2022
- Author(s)
  W. Kwon, S. Kawasaki, H. Watanabe, A. Tanaka, Y. Honda, H. Ikeda, K. Iso, H. Amano
- Organizer
  International Workshop on Nitride Semicondoctors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04578
[Presentation] 多光子励起OBICを用いたGaN縦型p-nダイオード駆動中におけるキャリア濃度分布測定手法の提案2021
- Author(s)
  八木誠、川崎晟也、隈部岳瑠、安藤悠人、田中敦之、出来真斗、久志本真希、新田州吾、本田善央、天野浩
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04578
[Presentation] 多光子励起を用いたGaNの正孔の衝突イオン化係数の測定2021
- Author(s)
  川崎晟也、安藤悠人、渡邉浩崇、田中敦之、出来真斗、新田州吾、本田善央、天野浩
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04578
[Presentation] GaNによるpn接合ダイオード中の光学的手法及び電気的手法による欠陥評価2021
- Author(s)
  本田善央、田中敦之、川崎晟也、出来真斗、天野浩
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20K04578
[Presentation] GaNパワーデバイスの実用化に向けた準備状況について2019
- Author(s)
  田中敦之、安藤悠人、高橋昌大、三浦史也、川崎晟也、渡邉浩崇、久志本真希、出来真斗、新田州吾、本田善央、天野浩
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] A novel birefringent observation for analyzing dislocations in GaN2019
- Author(s)
  Atushi Tanaka, Sho Inotsume, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, Hiroshi Amano
- Organizer
  13th International Conference on Nitride Semiconductors
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Characterizations of high-temperature Mg ion implantation in GaN2018
- Author(s)
  M. Takahashi, K. Sone, A. Tanaka, S. Usami, M. Deki, M. Kushimoto, K. Nagamatsu, S. Nitta, Y. Honda, and H. Amano,
- Organizer
  Internatinal Symposium on Growth of III-Nitrides ISGN-7
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Screw dislocations and nanopipe generation in a MOVPE-grown homoepitaxial layer on freestanding GaN substrates and the electrical influence on vertical p－n diodes2018
- Author(s)
  Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima, Yuto Ando, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] 3DAPおよびLACBED法によるGaN自立基板上pnダイオードのリークの起源調査2018
- Author(s)
  宇佐美茂佳、菅原義弘、姚永昭、石川由加里、間山憲仁、戸田一也、安藤悠人、田中敦之、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
- Organizer
  第65会　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] GaN自立基板上pnダイオード逆方向リーク電流の成長条件依存性2018
- Author(s)
  宇佐美茂佳、福島颯太、安藤悠人、田中敦之、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
- Organizer
  第65会　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] GaNデバイスのキラーとなる転位欠陥とその低減法2018
- Author(s)
  田中敦之, 宇佐美茂佳, 福島颯太, 安藤悠人, 久志本真希, 出来真斗,　新田州吾, 本田善央, 天野浩
- Organizer
  第79回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Vertical GaN pn diode with Avalanche capability structure2018
- Author(s)
  Hayata Fukushima, Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Improvement of Electrical Stability of ALD-Al2O3/GaN interface by UV/O3 Oxidation and Postdeposition Annealing2018
- Author(s)
  Manato Deki, Kazushi Sone, Kenta Watanabe, Fumiya Watanabe, Kentaro Nagamatsu, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Organizer
  Internatinal Symposium on Growth of III-Nitrides ISGN-7
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Ammonia Decomposition and Reaction by High-Resolution Mass Spectrometry for Group III-Nitrides Epitaxial Growth2018
- Author(s)
  Zheng Ye, Shugo Nitta, Kentaro Nagamatsu, Naoki Fujimoto, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Yoshio Honda, Markus Pristovsek, Hiroshi Amano
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Schottky Barrier Diodes Fabricated on Miscut m-plane Substrates2018
- Author(s)
  Yuto Ando, Kentaro Nagamatsu, Atsushi Tanaka, Manato Deki,　Ousmane 1 Barry, Shigeyoshi Usami, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
- Organizer
  Internatinal Symposium on Growth of III-Nitrides ISGN-7
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] GaN中転位の三次元観察と転位がデバイスに与える影響2018
- Author(s)
  田中敦之、宇佐美茂佳、安藤悠人、永松謙太郎、久志本真希、出来真斗、新田州吾、本田善央、天野浩
- Organizer
  第65会　応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] 多光子PL顕微鏡による窒化ガリウム中転位の三次元観察2018
- Author(s)
  田中敦之，永松謙太郎，久志本真希，出来真斗，新田州吾，本田善央，天野浩
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Dislocation Characterization of GaN epilayer grown for power devices2018
- Author(s)
  Atsushi Tanaka
- Organizer
  ACALED workshop
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods2018
- Author(s)
  Shigeyoshi Usami, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa, Norihito Mayama, Kazuya Toda, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Organizer
  The Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] Observation of Dislocation Propagation in GaN on GaN Structure with a Multiphoton Excitation Photoluminescence Microscope2018
- Author(s)
  Atushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda HIroshi Amano
- Organizer
  Internatinal Symposium on Growth of III-Nitrides ISGN-7
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K17808
[Presentation] 多光子PLを用いたGaN基板・GaNエピ層中の転位観察2017
- Author(s)
  田中敦之、宇佐美茂佳、安藤悠人、永松謙太郎、新田州吾、本田善央、天野浩
- Organizer
  日本結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-17K17808

1. Honda Yoshio (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 新田州吾 (80774679)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 鄭恵貞 (10898399)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

TANAKA Atsushi 田中 敦之

Tanaka Atsushi 田中 敦之

Research Projects

Research Products

Co-Researchers

Investigation of the annealing response of GaN using single-mode microwaves and development of an annealing process

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

High speed growth of pn junction by HVPE for fabrication of SJ diod

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Direct observation of electric field distribution in GaN power devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study about the influence of dislocation on devices for practical application of GaN power devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Reverse leakage mechanism of dislocation-free GaN vertical p-n diodes2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Direct evidence of Mg diffusion through threading mixed dislocations in GaN p?n diodes and its effect on reverse leakage current2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown2019

Author(s)

Journal Title

NAID

Data Source

[Journal Article] V-shaped dislocations in a GaN epitaxial layer on GaN substrate2019

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates2018

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate2018

Author(s)

Journal Title

Data Source

[Journal Article] Comparing high-purity c-and m-plane GaN layers for Schottky barrier diodes Grown homoepitaxially by metalorganic vapor phase epitaxy2018

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes2017

Author(s)

Journal Title

DOI

Data Source

[Presentation] Reverse leakage mechanism of 900V GaN vertical p-n junction diodes with and without threading dislocations2022

TANAKA Atsushi 田中敦之

Tanaka Atsushi 田中敦之