Nitta Shugo 新田州吾

… Alternative Names

新田州吾ニッタシュウゴ

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Researcher Number	80774679
Other IDs
Affiliation (Current)	2022: 名古屋大学, 未来材料・システム研究所, 特任准教授
Affiliation (based on the past Project Information) *help	2022: 名古屋大学, 未来材料・システム研究所, 特任准教授 2016 – 2018: 名古屋大学, 未来材料・システム研究所, 特任准教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator InGaN / MOVPE / NH3 / アンモニア / 分解 / LED / MOCVD / 長波長 / 窒化物半導体 / LD … More / MOVPE/MOCVD / NH3/アンモニア / V/III比 / 結晶成長 / 電子・電気材料 / 表面・界面物性 / 半導体物性 … More Except Principal Investigator GaN / HVPE / SJダイオード / pn接合 Less

High speed growth of pn junction by HVPE for fabrication of SJ diod
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
An realistic improvement of reactor design to enhance ammonia decomposition rate for high quality high In content InGaN MOVPE growthPrincipal Investigator
- Principal Investigator
  
  Nitta Shugo
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University

All 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Morphological study of InGaN on GaN substrate by supersaturation2019
- Author(s)
  Liu Zhibin、Nitta Shugo、Robin Yoann、Kushimoto Maki、Deki Manato、Honda Yoshio、Pristovsek Markus、Amano Hiroshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 508 Pages: 58-65
- DOI
  10.1016/j.jcrysgro.2018.12.028
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06260
[Journal Article] Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy2019
- Author(s)
  Liu Zhibin、Nitta Shugo、Usami Shigeyoshi、Robin Yoann、Kushimoto Maki、Deki Manato、Honda Yoshio、Pristovsek Markus、Amano Hiroshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 509 Pages: 50-53
- DOI
  10.1016/j.jcrysgro.2018.12.007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] The effect of the environment temperature around the wafer on InGaN grown by metalorganic vapor phase epitaxy2018
- Author(s)
  Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Kentaro Nagamatsu, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] Direct observation of ammonia decomposition and interaction with trimethylgallium in a metalorganic vapor phase epitaxy reactor2018
- Author(s)
  Shugo Nitta, Kentaro Nagamatsu, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] Direct observation of ammonia decomposition and interaction with trimethylgallium in a metalorganic vapor phase epitaxy reactor2018
- Author(s)
  Shugo Nitta
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy2018
- Author(s)
  Zhibin Liu, Shugo Nitta, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, and Hiroshi Amano
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices2017
- Author(s)
  Shugo Nitta
- Organizer
  Optics 2017 - Photonic Conferences - Laser Technology Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260
[Presentation] In-line NH3 Reactant Analysis on Nitride Semiconductor Metalorganic Vapor Phase Epitaxy via High-Resolution Mass Spectrometry2016
- Author(s)
  S. Nitta, K. Nagamatsu, R. Miyagoshi, Z. Ye, H. Nagao, S. Miki, H. Y. Honda and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Orlando, Florida
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06260

1. 本田善央 (60362274)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
2. 田中敦之 (30774286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. Amano Hiroshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
4. Usami Shigeyoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
5. Nagamatsu Kentaro

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. Deki Manato

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results

Nitta Shugo 新田 州吾

新田 州吾 ニッタ シュウゴ

Research Projects

Research Products

Co-Researchers

High speed growth of pn junction by HVPE for fabrication of SJ diod

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

An realistic improvement of reactor design to enhance ammonia decomposition rate for high quality high In content InGaN MOVPE growthPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Morphological study of InGaN on GaN substrate by supersaturation2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy2019

Author(s)

Journal Title

DOI

Data Source

[Presentation] The effect of the environment temperature around the wafer on InGaN grown by metalorganic vapor phase epitaxy2018

Author(s)

Organizer

Data Source

[Presentation] Direct observation of ammonia decomposition and interaction with trimethylgallium in a metalorganic vapor phase epitaxy reactor2018

Author(s)

Organizer

Data Source

[Presentation] Direct observation of ammonia decomposition and interaction with trimethylgallium in a metalorganic vapor phase epitaxy reactor2018

Author(s)

Organizer

Data Source

[Presentation] Effect of the misorientation angle of GaN substrate on high-indium-content InGaN grown by metalorganic vapor phase epitaxy2018

Author(s)

Organizer

Data Source

[Presentation] In situ and ex situ optical characterization of nitride semiconductor crystal for advanced optical and power electronic devices2017

Author(s)

Organizer

Data Source

[Presentation] In-line NH3 Reactant Analysis on Nitride Semiconductor Metalorganic Vapor Phase Epitaxy via High-Resolution Mass Spectrometry2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Nitta Shugo 新田州吾

新田州吾ニッタシュウゴ