Irisawa Toshifumi 入沢寿史

Researcher Number	40759940
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ付
Affiliation (based on the past Project Information) *help	2022 – 2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ付 2017 – 2021: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Review Section/Research Field	Except Principal Investigator Broad Section D / Electronic materials/Electric materials
Keywords	Except Principal Investigator 磁場誘起相転移 / 光誘起相転移 / 多形転移 / 相変化 / 磁場誘起相変化 / 光誘起相変化 / 相変化メモリ / 多形変化 / III-V半導体 / III-V族半導体 … More / III-V / Ge / 結晶ひずみ / 移動度 / 3次元集積 / III-V族化合物半導体 / ゲルマニウム / MOSFET Less

Crystalline polymorphic-change memory technology
- Principal Investigator
  
  須藤祐司
- Project Period (FY)
  2021 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  Tohoku University
Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer
- Principal Investigator
  
  Takagi Shinichi
- Project Period (FY)
  2017 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo

All 2022 2021 2020 2019 2018 2017

All Journal Article Presentation

[Journal Article] Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure2022
- Author(s)
  W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SC Pages: SC1024-SC1024
- DOI
  10.35848/1347-4065/ac3fca
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021
- Author(s)
  W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
- Journal Title
  
  ECS Transactions
  
  Volume: 102(4) Issue: 4 Pages: 17-26
- DOI
  10.1149/10204.0017ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers2021
- Author(s)
  V. Poborchii, J. Groenen, P. I. Geshev, J. Hattori, W. H. Chang, H. Ishii, T. Irisawa, and T. Maeda
- Journal Title
  
  Nanoscale
  
  Volume: 13 Issue: 21 Pages: 9686-9697
- DOI
  10.1039/d1nr01355f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Performance and reliability improvement in Ge(100) nMOSFETs through channel flattening process2020
- Author(s)
  W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
- Journal Title
  
  Solid-State Electronics
  
  Volume: 169 Pages: 107816-107816
- DOI
  10.1016/j.sse.2020.107816
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15053, KAKENHI-PROJECT-17H06148
[Journal Article] (Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication2020
- Author(s)
  Maeda Tatsuro、Irisawa Toshifumi、Ishii Hiroyuki、Chang Wen Hsin
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 5 Pages: 157-167
- DOI
  10.1149/09805.0157ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 66 Issue: 3 Pages: 1182-1188
- DOI
  10.1109/ted.2019.2895349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 33 Issue: 12 Pages: 124002-124002
- DOI
  10.1088/1361-6641/aae620
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-17H04919
[Journal Article] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi,　Y. Kurashima, N. Uchida, and T. Maeda
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Issue: 10 Pages: 25-34
- DOI
  10.1149/08610.0025ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Journal Article] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017
- Author(s)
  W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 64 Issue: 11 Pages: 4615-4621
- DOI
  10.1109/ted.2017.2756061
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] エピタキシャルリフトオフ(ELO)法によるGeOI(111)構造の作成2021
- Author(s)
  W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021
- Author(s)
  W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
- Organizer
  239th Electrochemical Society (ECS) Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] UTB-GeOI の量子化準位の顕微フォトリフレクタンス測定2021
- Author(s)
  公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、前田辰郎、深津晋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure2021
- Author(s)
  W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
- Organizer
  53rd International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020
- Author(s)
  T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
- Organizer
  4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultrathin-body GeOI の円偏光フォトルミネッセンス2020
- Author(s)
  公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-Off for Ultra-Thin GeOI Fabrication2020
- Author(s)
  T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
- Organizer
  PRiME 2020 G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 9
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020
- Author(s)
  W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
- Organizer
  4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020
- Author(s)
  T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
- Organizer
  4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultrathin-body GeOI における量子閉じ込め電子ラマン散乱2020
- Author(s)
  公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Geチャネル平坦化プロセスにおけるGe nMOSFETsの面方位依存性2020
- Author(s)
  石井寛仁，張文馨, 入沢寿史, 石井裕之, 水林亘，前田辰郎
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020
- Author(s)
  W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
- Organizer
  4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations2019
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration2019
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, Y. Kurashima, H. Takagi and N. Uchida
- Organizer
  Silicon Nanoelectronics Workshop (SNW)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] モノリシック3次元CMOS集積に向けたGe-On-Insulator技術2019
- Author(s)
  前田辰郎, 張文馨, 入沢寿史, 石井裕之, 倉島優一、髙木秀樹、内田紀行
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Significant Performance Enhancement of UTB GeOI pMOSFETs　by Advanced Channel Formation Technologies2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
- Organizer
  Symposia on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] チャネル形成技術の高度化による極薄GeOI pMOSFETsの性能向上2018
- Author(s)
  張文馨, 入沢寿史, 石井裕之, 内田紀行, 前田辰郎
- Organizer
  第210回シリコンテクノロジー研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi,　Y. Kurashima, N. Uchida, and T. Maeda
- Organizer
  AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] モノリシック3D CMOS に向けたUTB-GeOI 構造の開発2018
- Author(s)
  前田辰郎, 張文馨, 入沢寿史, 石井裕之, 内田紀行
- Organizer
  第24回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] UTB-GeOIチャネル構造における裏面Siパッシベーションの効果2018
- Author(s)
  張文馨, 入沢寿史, 石井裕之, 内田紀行, 前田辰郎
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator2018
- Author(s)
  V. Poborchii, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida, J. Groenen, P. Geshev and T. Maeda
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] HEtero-Layer-Lift-Off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs2018
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
- Organizer
  2018 International Symposium on VLSI Technology, Systems and Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application2018
- Author(s)
  W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, Hi. Ota, H. Takagi, Y. Kurashima, N. Uchida, T. Maeda
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] UTB-GeOI構造の超平坦化による正孔移動度向上2018
- Author(s)
  張文馨, 入沢寿史, 石井裕之, 内田紀行, 前田辰郎
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
- Organizer
  ISTDM/ICSI 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] 超薄膜ゲルマニウムのバンド構造2018
- Author(s)
  前田辰郎, 張文馨, 入沢寿史, 石井裕之, 服部浩之, 内田紀行, 山内淳
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H06148
[Presentation] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017
- Author(s)
  W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida and T. Maeda
- Organizer
  Sympia on VLSI technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06148

1. Takagi Shinichi (30372402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
2. 前田辰郎 (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 35 results
3. 須藤祐司 (80375196)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 山本卓也 (10804172)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 齊藤雄太 (50738052)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 谷村洋 (70804087)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 春本高志 (80632611)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. CHANG WENHSIN

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Irisawa Toshifumi 入沢 寿史

Research Projects

Research Products

Co-Researchers

Crystalline polymorphic-change memory technology

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Performance and reliability improvement in Ge(100) nMOSFETs through channel flattening process2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] (Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017

Author(s)

Journal Title

DOI

Data Source

[Presentation] エピタキシャルリフトオフ(ELO)法によるGeOI(111)構造の作成2021

Author(s)

Organizer

Data Source

[Presentation] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

Author(s)

Organizer

Data Source

[Presentation] UTB-GeOI の量子化準位の顕微フォトリフレクタンス測定2021

Author(s)

Organizer

Data Source

[Presentation] Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure2021

Author(s)

Organizer

Data Source

[Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020

Author(s)

Organizer

Irisawa Toshifumi 入沢寿史

[Presentation] Significant Performance Enhancement of UTB GeOI pMOSFETs　by Advanced Channel Formation Technologies2018