ONABE Kentaro 尾鍋研太郎

Researcher Number	50204227
External Links
Affiliation (based on the past Project Information) *help	2014: 東京大学, 大学院新領域創成科学研究科, 教授 2009 – 2012: 東京大学, 新領域創成科学研究科, 教授 2007 – 2012: The University of Tokyo, 大学院・新領域創成科学研究科, 教授 2003: 東京大学, 新領域創成科学研究科, 教授 1999 – 2003: University of Tokyo, Graduate School of Frontier Sciences, Professor, 大学院・新領域創成科学研究科, 教授 … More 2001: 東京大学, 大学院・新領域創成科学研究所, 教授 1999: 東京大学, 大学院工学系研究科, 教授 1995 – 1998: 東京大学, 大学院・工学系研究科, 教授 1996: 東京大学, 工学系研究科, 助手 1988 – 1994: 東京大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Science and Engineering / Applied materials Except Principal Investigator Applied materials science/Crystal engineering / Applied materials / Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / 物理計測・光学 / Nanomaterials/Nanobioscience / Science and Engineering
Keywords	Principal Investigator MOVPE / 窒化物半導体 / RF-MBE / GaAsN / InGaAsN / エピタキシャル成長 / InGaPN / 窒化物混晶半導体 / 窒化ガリウム / ワイドギャップ化合物半導体 … More / 有機金属気相成長法 / MBE / 立方晶窒化物半導体 / 結晶成長 / ジメチルヒドラジン / 有機金属気相成長 / 立方晶GaN / GaN / heterostructure / photoreflectance / cubic indium nitride / cubic gallium nitride / cubic nitride semiconductors / nitride semiconductors / 深い準位 / 立法晶AlGaN / 立法晶GaN / 選択成長 / GaAs / 立方晶AlGaN / ヘテロ構造 / フォトリフレクタンス / 立方晶窒化インジウム / 立方晶窒化ガリウム / huge bandgap bowing / slloy semiconductors / diluted nitride alloy / 巨大ボウイング / GaNAs / GaNP / 巨大バンドギャッブボウイング / InAsN / 巨大バンドギャップボウイング / 混晶半導体 / III-V-N型窒化物混晶 / METALORGANIC VAPOR PHASE EPITAXY / GALLIUM NITRADE / GALLIUM PHOSPHIDE / METASTABLE ALLOY SEMICONDUCTOR / WIDEGAP COMPOUND SEMICONDUCTOR / GaPN ALLOY / NITRIDE ALLOY SEMICONDUCTOR / MOVPE法 / ガリウムリン / 準安定混晶半導体 / GaPN混晶 / Visible-Light-Emitting Material / Structural Transformation / Gallium Arsenide Phosphide / Gallium Nitride / Atomic Layer Epitaxy / Widegap Compound Semiconductor / Movpe / 結晶構造交換 / 青色発光半導体レ-ザ / 可視光発光材料 / 結晶構造変換 / ガリウム砒素燐 / 原子層エピタキシ- / III族窒化物半導体 / 立方晶III族窒化物 / 半導体物性 / III-N半導体 / 立方晶III-N半導体 / 窒化インジウム / 結晶工学 / 希薄窒化物 / 自己形成量子ドット / 量子ドット / 量子ナノ構造 / III-V-N混晶 / 希薄窒化物半導体 / 分離供給法 / アダクト / 成長 / エピタキシャル / InN / GaPN / エピタキシー機構 / 構造変換 / ヘテロエピタキシー / ナイトライド … More Except Principal Investigator 非線形光学 / SiGe / 光物性 / 半導体 / ZnSe / CsLiB_6O_<10> / β-BaB_2O_4 / AlGaP / Frequency Conversion / Second-Harmonic Generation / Nonlinear Optics / 光第2高調波発生 / 波長変換 / nonlinear optics / エピタキシャル成長 / MBE、エピタキシャル / 応用光学・量子光工学 / 単一光子 / 半導体物性 / シリコンゲルマニウム / ブル-シフト / メゾスコピック領域 / stoichiometric LiNbO_3 / absolute measurement / quadratic nonlinear optical coefficients / GaAs / CLBO / BBo / 赤外 / ストイキオメトリック / コングルエント / LiNbO_3 / ニオブ酸リチウム(ストイキオメトリック組成) / セレン化亜鉛 / 絶対測定 / 2次非線形光学定数 / resistance against oxidation / magnesia / epitaxial growth / pulsed laser ablation / ferroelectric oxides / nitride semiconductors / ferroelectric waveguides / blue laser diodes / チタン酸ジルコン酸鉛 / バッファ層 / 窒化物半導体 / 耐酸化性 / 酸化マグネシウム / レーザアブレーション / 酸化物強誘電体 / 窒化物系半導体 / 強誘電体光導波路 / 青色半導体レーザ / no phonon transition / neighboring confinement structure / indireck semiconductors / アルミニウムガリウム燐 / 無フォノン発光 / 隣接閉じ込め構造 / 間接遷移型半導体 / Antiphase Domain / Quasi Phase Matching / Sublattice Reversal / Domain Inversion / Compound Semiconductor / 差周波発生 / 差調波発生 / アンチフェイズドメイン / 疑似位相整合 / 副格子交換 / 分極反転 / 化合物半導体 / Lithography / Inorganic Resist / Micro Fabrication / Waveguiding Device / Organic Crystal / リソグラフィ- / リソグラフィー / 水溶性無機レジスト / 微細加工 / 光導波路素子 / 光学2高調波発生 / 有機結晶 / exciton / structural phase transition / perovskite / low-dimensional material / layered material / quantum-well / 室温励起子 / ペロブスカイト型構造 / 励起子 / 構造相転移 / ペロブスカイト / 低次元物質 / 層状物質 / 量子井戸 / 微構造 / 原子尺度の制御 / 等電子トラップ / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / MBE,エピタキシャル / 結晶工学 / エピタキシャル / 応用光学・量子光工学MBE / 電子プローブ / 構造解析 / 構造評価 / 格子欠陥 / 結晶成長 / 組織制御 / デバイス材料 / 電子顕微鏡 / 初期酸化 / リン吸着デジタル制御 / 自己触媒 / 島状成長 / 電界効果トランジスタ / 変調ドーピング / 低温Si層 / CMP / 発光ダイオード / 電界効果型トランジス / 電界効果型トランジスタ / 電子物性 / 光エレクトロニクス / 人工IV族半導体 / バンドラインアップ / ガリウム砒素リン / フォトルミネッセンス / フォトリフレクタンス / 半導体超格子 / 真空一貫リソグラフィ / 極微細線 / 化学エッチング / 収束イオン線 / 電子波干渉 / 電子線描画法 / 一次元閉じ込め / ウェットエッチング / GaAs極微細線 / AlGaAs / 電子線描画 / 超微細構造 / 電子波 / 原子尺度 / 超構造 Less

Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructuresPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
有機N原料によるInNおよび関連混晶薄膜のMOVPE成長Principal Investigator
- Principal Investigator
  
  尾鍋研太郎
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Single Photon Generation from locally doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
有機N原料によるInNのMOVPE成長Principal Investigator
- Principal Investigator
  
  尾鍋研太郎
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structuresPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
電子プローブによる光・電子デバイス材料および実装素子のナノ組織解析技術の進展
- Principal Investigator
  
  桑野範之
- Project Period (FY)
  2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Kyushu University
Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic DevicesPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2000 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
人工IV族半導体の形成と光・電子物性制御
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Quadratic Nonlipear Optical Properties Studied by Reflected Second-Harmonic Ellipsometry
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Meiji University
Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its ApplicationsPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1999 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Fabrication of novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides
- Principal Investigator
  
  MASUDA Atsushi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Japan Advanced Institute of Science and Technology
Domain-Inversion Epitaxy and Its Application to Wavelength Conversion Devices
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Research on Optical Transitions of Indirect Semiconductors with Novel Superstructures
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
ガリウム砒素リン系半導体超格子構造による高効率発光素子材料の実現
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORSPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  THE UNIVERSITY OF TOKYO
ナイトライド系化合物半導体の立方晶構造変換ヘテロエピタキシー機構の研究Principal Investigator
- Principal Investigator
  
  尾鍋研太郎
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
Davelopment of Nonlinear Optical Frequency-Conversion Micro Devices Using Micro-Fabrication Technique for Organic Crystals
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  物理計測・光学
- Research Institution
  The University of Tokyo
電子波デバイスのための極限構造の制御と評価
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
電子波デバイスのための極限構造の制御と評価
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
Optical Properties of Layered Perovskite Materials with Natural Quantum-Well Structure
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
半導体の原子尺度での制御に関する研究
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase GrowthPrincipal Investigator
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1989 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
半導体の原子尺度での制御に関する研究
- Principal Investigator
  
  伊藤良一
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo

All 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 211 Issue: 4 Pages: 752-755
- DOI
  10.1002/pssa.201300462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: In Press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013
- Author(s)
  RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 85-87
- DOI
  10.1016/j.jcrysgro.2012.12.043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (In Press)
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2012
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S.Kuboya, K. Onabe
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol. 9 Issue: 3-4 Pages: 558-561
- DOI
  10.1002/pssc.201100395
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入傾向2011
- Author(s)
  石田崇,角田雅弘,窪谷茂幸,尾鍋研太郎
- Journal Title
  
  第58回応用物理学関係連合講演会予稿集
  
  Volume: CD-ROM
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入傾向2011
- Author(s)
  石田崇, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Journal Title
  
  2011年春季第58回応用物理学関係連合講演会予稿集
  
  Volume: (CD-ROM)
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates2011
- Author(s)
  M. Kakuda, S. Kuboya, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.323 Pages: 91-94
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] TEMinvestigation of anisotropic defect structure in cubic GaN/AlGaAs/GaAs(001) grown by MOVPE2011
- Author(s)
  J. Parinyataramas, S. Sanorpim, C.Thanachayanont, K. Onabe
- Journal Title
  
  physica status solidi (c)
  
  Volume: Vol. 8 Issue: 7-8 Pages: 2255-2257
- DOI
  10.1002/pssc.201001170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長2011
- Author(s)
  角田雅弘, 牧野兼三, 石田崇, 窪谷茂幸, 尾鍋研太郎
- Journal Title
  
  2011年春季第58回応用物理学関係連合講演会予稿集
  
  Volume: (CD-ROM)
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長2011
- Author(s)
  角田雅弘,牧野兼三,石田崇,窪谷茂幸,尾鍋研太郎
- Journal Title
  
  第58回応用物理学関係連合講演会予稿集
  
  Volume: CD-ROM
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substrates2011
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 323 Pages: 91-94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO (001) substrates2011
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 323 Pages: 91-94
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] A growth model of cubic GaN microstripes grown by MOVPE : Vapour Phase diffusion model including surface migration effects2010
- Author(s)
  P.Sukkaew, S.Sanorpim, K.Onabe
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Pages: 1372-1374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] A growth model of cubic GaN microstripes grown by MOVPE: Vapour Phase diffusion model including surface migration effects2010
- Author(s)
  P. Sukkaew, S. Sanorpim, K. Onabe
- Journal Title
  
  physica status solidi(a)
  
  Volume: Vol. 207 Issue: 6 Pages: 1372-1374
- DOI
  10.1002/pssa.200983548
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Physica
  
  Volume: Vol.42, No10 Issue: 10 Pages: 2529-2531
- DOI
  10.1016/j.physe.2009.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2529-2531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen2009
- Author(s)
  Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen Precursor2009
- Author(s)
  Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016003
[Journal Article] MOVPE growth of InN films using 1, 1-dimethylhydrazine as a nitrogen precursor2009
- Author(s)
  Q. T. Thieu, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor Journal of Crystal Growth2009
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Journal Title
  
  Journal of Crystal Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032002
[Journal Article] Metastable cubic InN layers on GaAs (001) substrates grown by MBE : Growth condition and crystal structure2009
- Author(s)
  S. Sanorpim, P. Jantawongrit, S. Kuntharin, C. Thanachayanont, T. Nakamura, R. Katavama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Metastable cubic InN layers on GaAs(001)substrates grown by MBE : Growth condition and crystal structure2009
- Author(s)
  S.Sanorpim, P.Jantawongrit, S.Kuntharin, C.Thanachayanont, T.Nakamura, R.Katayama, K.Onabe
- Journal Title
  
  physica status solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Incorporation of N in high N-content GaAsN films investigated by Raman scattering2008
- Author(s)
  S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 5
  
  Pages: 2923-2925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE2008
- Author(s)
  P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Advanced Materials Research Vol. 55-57
  
  Pages: 825-828
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE growth and photoluminescence properties of InAsN QDs2008
- Author(s)
  S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 5
  
  Pages: 1715-1718
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007
- Author(s)
  S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 150-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007
- Author(s)
  P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 111-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) 4
  
  Pages: 2387-2390
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Photoluminescence and photoluminescence-excitation spectro-scopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007
- Author(s)
  D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 531-535
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007
- Author(s)
  P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 111-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007
- Author(s)
  D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 531-535
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007
- Author(s)
  S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 544-547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 4
  
  Pages: 2387-2390
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007
- Author(s)
  S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 150-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007
- Author(s)
  S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 544-547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  モンペリエ(フランス)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  東京
- Year and Date
  2012-12-09
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation]2012
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京)
- Year and Date
  2012-04-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(3)2012
- Author(s)
  角田雅弘, 森川生、窪谷茂幸, 尾鍋研太郎
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都新宿区)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] GaAs中窒素δドープ超格子のエネルギー構造評価2012
- Author(s)
  野口駿介, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(3)2012
- Author(s)
  角田雅弘,森川生,窪谷茂幸,尾鍋研太郎
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京).
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響2012
- Author(s)
  新井佑也, 星野真也, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Growth of cubic AlN films on MgO substrate via2-step cubic GaN buffer layer by RF-MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  伊豆(静岡)
- Year and Date
  2012-07-11
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] RF-MBEGrowth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  奈良(奈良)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Growth of cubic AlN films on MgO substrate using cubic GaN buffer layer by RF-MBE2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011)
- Place of Presentation
  Toba,Mie, Japan.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN films on YSZ(001) vicinal substrates by RF-MBE2011
- Author(s)
  T. Ishida, M. Kakuda, S. Kuboya, K. Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba, Mie, Japan.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入比率の偏り2011
- Author(s)
  石田崇,角田雅弘,窪谷茂幸,尾鍋研太郎
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga, Japan
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  守山(滋賀).
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] YSZ(001)微傾斜基板上立方晶InNへの六方晶相の混入比率の偏り2011
- Author(s)
  石田崇、角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic AlN films on MgO substrate using cubic GaN buffer layer by RF-MBE2011
- Author(s)
  M.Kakuda, K.Makino, T.Ishida, S.Kuboya, K.Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba Hotel International Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN films on YSZ(001) vicinal substrates by RF-MBE2011
- Author(s)
  T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba Hotel International Toba, Mie, Japan
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic III-nitrides: potential photonic materials (Invited)2011
- Author(s)
  K. Onabe, S.Sanorpim, H. Kato, M.Kakuda, T. Nakamura, K. Nakamura, S.Kuboya, R. Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA,USA.
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Cubic III-nitrides : potential photonic materials2011
- Author(s)
  K.Onabe, S.Sanorpim, H.Kato, M.Kakuda, T.Nakamura, K.Nakamura, S.Kuboya, R.Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA, USA(Invited)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(2)2011
- Author(s)
  角田雅弘,牧野兼三,石田崇,窪谷茂幸,尾鍋研太郎
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic InN films on YSZ(001) vicinal substrates grown by RF-MBE2011
- Author(s)
  T. Ishida, M. Kakuda, S. Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  守山(滋賀).
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer2011
- Author(s)
  M. Kakuda, K. Makino, T. Ishida, S. Kuboya, K. Onabe
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK.
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Cubic InN films on YSZ(001) vicinal substrates grown by RF-MBE2011
- Author(s)
  T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  30th Electronic Materials Symposium (EMS-30)
- Place of Presentation
  Laforet Biwako, Moriyama, Shiga, Japan
- Year and Date
  2011-07-01
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶GaNバッファー層を用いた立方晶AlNのRF-MBE成長(2)2011
- Author(s)
  角田雅弘, 牧野兼三、石田崇、窪谷茂幸, 尾鍋研太郎
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of cubic GaN films via an AlGaAs intermediate layer on GaAs (001) substrates2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Efficient growth of InN films by separate supply of TMIn and DMHy2010
- Author(s)
  Q.T.Thieu, T.Tachikawa, Y.Seki, S.Kuboya, K.Onabe
- Organizer
  15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XV)
- Place of Presentation
  Lake Tahoe, USA
- Year and Date
  2010-05-26
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] RF-MBE法によるMgO(001)基板上Siドープ立方晶AlGaNの薄膜成長2010
- Author(s)
  角田雅弘,窪谷茂幸,尾鍋研太郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MOVPE growth of cubic GaN films via an AlGaAs intermediate layer on GaAs(001) substrates2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S.Kuboya, K. Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡).
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010
- Author(s)
  中村桂土、角田雅弘、石田崇、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010
- Author(s)
  大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Efficient MOVPE growth of InN films and micro-particles by separate supply of TMIn and DMHy2010
- Author(s)
  Q.T.Thieu, T.Tachikawa, T.Kikuchi, Y.Seki, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Shuzenji, Japan Laforet Shuzenji
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Growth of Si doped cubic GaN and AlGaN films on MgO(001) substrates by RF-MBE2010
- Author(s)
  M. Kakuda, S.Kuboya, K. Onabe,
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡).
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE Growth of Cubic InN and InGaN Films on YSZ(001) Substrates2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa,Florida, USA.
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2010
- Author(s)
  関裕紀, 王彦哲, ティユクァントゥ, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Growth of Si doped cubic GaN and AlGaN films on MgO (001) substrates by RF-MBE2010
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010
- Author(s)
  中村桂土, 角田雅弘, 石田崇, 窪谷茂幸, 片山竜二, 尾鍋研太郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学 (神奈川)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] RF-MBE growth of cubic InN and InGaN films on YSZ (001) substrates2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Laforet Shuzenji, Shuzenji, Japan
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MOVPE growth of c-GaN films via an AlGaAs intermediate Layer2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S.Kuboya, K. Onabe
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN3)
- Place of Presentation
  Montpellier,France.
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE Growth of Si doped cubic GaN and AlGaN films on MgO(001) substrates2010
- Author(s)
  M. Kakuda, S.Kuboya, K. Onabe,
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Berlin,Germany.
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE growth of cubic InN and InGaN films on YSZ(001) substrates2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  伊豆(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Growth of Si doped c-AlGaN and c-GaN films on MgO (001) substrate by RF-MBE2010
- Author(s)
  M.Kakuda, Y.Fukuhara, K.Nakamura, S.Kuboya, K.Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of c-GaN Films via an AlGaAs Intermediate Layer on GaAs (001) Substrates by MOVPE2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of c-GaN Films via an AlGaAs Intermediate Layer on GaAs(001) Substrates by MOVPE2010
- Author(s)
  H. Kato, Y. Seki, Q. T. Thieu, S. Kuboya, K. Onabe
- Organizer
  8th International Symposium on Semiconductor Light Emitting Devices(ISSLED 2010)
- Place of Presentation
  Beijing, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MOVPE Growth of InPN Films on InP(001) Substrates2010
- Author(s)
  Y.Wang, Y.Seki, Q.T.Thieu, T.Kikuchi, S.Kuboya, K.Onabe
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工大
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE Growth of Cubic InN and InGaN Films on YSZ (001) Substrates2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of Si doped c-AlGaN and c-GaNfilms on MgO (001) substrate byRF-MBE2010
- Author(s)
  M. Kakuda, Y. Fukuhara, K.Nakamura, S. Kuboya, K. Onabe,
- Organizer
  8th International Symposiumon Semiconductor Light Emitting Devices (ISSLED 2010)
- Place of Presentation
  Beijing, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(4)2010
- Author(s)
  ティユクァントウ、立川卓、菊地健彦、関裕紀、窪谷茂幸、尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InPN films on InP(001) substrates2010
- Author(s)
  Y.Seki, Y.Z.Wang, Q.T.Thieu, S.Kuboya, S.Sanorpim, K.Onabe
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  Shuzenji, Japan Laforet Shuzenji
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] RF-MBE Growth of Si doped cubic GaN and AlGaN films on MgO (001) substrates2010
- Author(s)
  M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2010
- Author(s)
  関裕紀, 王彦哲, ティユクァントゥ, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学 (神奈川)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(4)2010
- Author(s)
  ティユクァントウ、立川卓、菊地健彦、関裕紀、窪谷茂幸、尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Ge(001)基板上へのInGaAsN薄膜のMOVPE成長2010
- Author(s)
  菊地健彦, ティユクァントゥ, 加藤宏盟, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Growth of cubic InN and InGaN films on YSZ (001) substrates by RF-MBE2010
- Author(s)
  K.Nakamura, T.Ishida, M.Kakuda, S.Kuboya, K.Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic InN and InGaN films on YSZ(001) substrates by RF-MBE2010
- Author(s)
  K. Nakamura, T. Ishida, M. Kakuda,S. Kuboya, K. Onabe
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE2010)
- Place of Presentation
  Berlin, Germany.
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] RF-MBE法によるMgO(001)基板上Siドープ立方晶AlGaNの薄膜成長2010
- Author(s)
  角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県長崎市)
- Year and Date
  2010-08-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of c-GaN films via an AlGaAs intermediate Layer on GaAs (001) substrates2010
- Author(s)
  H.Kato, Y.Seki, Q.T.Thieu, S.Kuboya, K.Onabe
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Efficient MOVPE growth of InN films by separate supply of TMIn and DMHy2010
- Author(s)
  Q.T.Thieu, T.Tachikawa, Y.Seki, S.Kuboya, K.Onabe
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (4)2010
- Author(s)
  テイユクァントウ, 立川卓, 菊地健彦, 関裕紀, 窪谷茂幸, 尾鍋研太郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学 (神奈川)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Ge(001)基板上へのInGaAsN薄膜のMOVPE成長2010
- Author(s)
  菊地健彦, ティユクァントゥ, 加藤宏盟, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学 (神奈川)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE GROWTH OF InPN FILMS ON InP(001) SUBSTRATES2010
- Author(s)
  Y.Seki, Y.Wang, Q.T.Thieu, S.Kuboya, S.Sanorpim, K.Onabe
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)
- Place of Presentation
  Takamatsu, Japan Takamatsu symbol Tower
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009
- Author(s)
  T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  神戸国際会議場 (兵庫県)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of InN Films Using 1,1-dimethylhydrazine as a Nitrogen Precursor(Invited)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors(APWS2009)
- Place of Presentation
  Zhang Jia Jie, Hunan, China
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009
- Author(s)
  P.Klangtakail, S.Sanorpim, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs (001) Substrates2009
- Author(s)
  D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  Biwako, Japan
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009
- Author(s)
  P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs(001)Substrates2009
- Author(s)
  D.Kaewket, S.Sanorpim, S.Tungasmita, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Biwako, Japan.
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009
- Author(s)
  福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  兵庫県・神戸国際会議場
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学 (茨城)
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  Biwako, Japan
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (3)2009
- Author(s)
  テイユクァントウ, 中川隆, 関裕紀, 窪谷茂幸, 片山竜二, 尾鍋研太郎
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学 (富山)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008
- Author(s)
  S. Sanorpim, R. Katavama, S. Kuboya, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France.
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(2)2008
- Author(s)
  ティュクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] InAsN薄膜の光学的特性2008
- Author(s)
  窪谷茂幸,黒田正行,西尾晋,ティユクァントゥ,片山竜二,尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Composition pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008
- Author(s)
  S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InAsN薄膜の光学的特性2008
- Author(s)
  窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学 (愛知)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008
- Author(s)
  S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth properties of high quality InAsN films2008
- Author(s)
  S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films avoiding parasitic reactions of precursors, trimethylindium and 1, 1-dimethylhydrazine2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  International Workshop on Nitiride Semiconductors (IWN 2008)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] InAsN quantum dots grown by MOVPE2008
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  Workshop on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  箱根(神奈川)
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as the nitrogen source2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] InAsN quantum dots grown by MOVPE2008
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katavama, K. Onabe
- Organizer
  Workshop on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  箱根 (神奈川)
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長2008
- Author(s)
  ティユクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(千葉)
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008
- Author(s)
  S. Kuboya, H. Kato, Q. T. Thieu, R. Katavama, K. Onabe
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  修善寺 (静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  2nd International Symposium on Growth of HI-Nitride (ISGN-2)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] GaAsN及びInAsN薄膜の水素・窒素混合キャリアガスを用いたMOVPE成長2008
- Author(s)
  窪谷茂幸, 加藤宏盟, ティユクァントゥ, 片山竜二, 尾鍋研太郎
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of GaAsN and InAsN films by using N2 carrier gas2008
- Author(s)
  S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama and K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth properties of high quality InAsN films2008
- Author(s)
  S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France.
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using 1, 1-dimethylhydrazine as the nitrogen source2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008
- Author(s)
  S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama, K. Onabe
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth properties of high quahty InAsN films2008
- Author(s)
  S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajhna, R. Katayama, K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  琵琶湖 (滋賀)
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007
- Author(s)
  S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA.
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学 (北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007
- Author(s)
  S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  琵琶湖(滋賀)
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学(北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic AlN films on MgO substrate via 2-step cubic GaN buffer layer by RF-MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（厚木市）
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] RF-MBE Growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
- Organizer
  10th International Conference on Nitride Semiconductors 2013
- Place of Presentation
  ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] RF-MBE法による立方晶AlNの結晶成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学（東京都目黒区）
- Data Source
  KAKENHI-PROJECT-22360005

1. ITO Ryoichi (40133102)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
2. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 12 results

# of Collaborated Products: 0 results
3. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 12 results

# of Collaborated Products: 49 results
4. KATAYAMA Ryuji (40343115)

# of Collaborated Projects: 9 results

# of Collaborated Products: 112 results
5. KONDO Takashi (60205557)

# of Collaborated Projects: 8 results

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6. FUKATSU Susumu (60199164)

# of Collaborated Projects: 6 results

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7. USAMI Noritaka (20262107)

# of Collaborated Projects: 4 results

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8. KOH Shinji (50323663)

# of Collaborated Projects: 3 results

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9. KUBOYA Shigeyuki (70583615)

# of Collaborated Projects: 3 results

# of Collaborated Products: 90 results
10. OSADA Toshihito (00192526)

# of Collaborated Projects: 2 results

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11. HIJIKATA Yasuto (70322021)

# of Collaborated Projects: 2 results

# of Collaborated Products: 37 results
12. YAGI Shuhei (30421415)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
13. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 29 results
14. 高柳邦夫 (80016162)

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15. 中島尚男 (20198071)

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16. 竹田美和 (20111932)

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17. 吉野淳二 (90158486)

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18. 永宗靖 (20218027)

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19. 呉軍 (80313005)

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20. YAMAMOTO Takahisa (20220478)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
21. OGASAWARA Nagaatsu (90134486)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. GONOKAMI Makoto (70161809)

# of Collaborated Projects: 1 results

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23. HANAMURA Eiichi (70013472)

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24. KUDO Tetsuichi (90205097)

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25. MASUDA Atsushi (30283154)

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26. SHIMIZU Tatsuo (30019715)

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27. MORIMOTO Akiharu (60143880)

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28. MIURA Noboru (10257131)

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29. TACHIKAWA Maki (60201612)

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30. CHOI Pak-Kon (30143530)

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31. 中川清和 (40324181)

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32. 末光眞希 (00134057)

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33. 櫻庭政夫 (30271993)

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34. 桑野範之 (50038022)

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35. 田中信夫 (40126876)

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36. 森博太郎 (10024366)

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37. 進藤大輔 (20154396)

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38. 纐纈明伯 (10111626)

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39. SAKUNTAM Sanorpim

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40. SHOJI Ichiro

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ONABE Kentaro 尾鍋 研太郎

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Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructuresPrincipal Investigator

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有機N原料によるInNおよび関連混晶薄膜のMOVPE成長Principal Investigator

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有機N原料によるInNのMOVPE成長Principal Investigator

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Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structuresPrincipal Investigator

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Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic DevicesPrincipal Investigator

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Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its ApplicationsPrincipal Investigator

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ONABE Kentaro 尾鍋研太郎