SHIBAHARA Kentaro 芝原健太郎

Researcher Number	50274139
External Links
Affiliation (based on the past Project Information) *help	2008: Hiroshima University, ナノデバイス・バイオ融合科学研究所, 准教授 2007: Hiroshima University, ナノデバイス・システム研究センター, 准教授 1996 – 2003: 広島大学, ナノデバイス・システム研究センター, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment Except Principal Investigator Electronic materials/Electric materials / 電子デバイス・機器工学 / Science and Engineering
Keywords	Principal Investigator シリコン / SEM / SIMS / ゲルマニウム / プレアモルファス化 / 浅接合 / 淺接合 / キセノン / ゲルマニュウム / イオン注入 … More / 砒素 / アンチモン / パイルアップ / ヒ素 / Silicon / Ion Implantation / Arsenic / Antimony / Pileup / ドーパント / 2次元分布 / silicon / Dopant / 2D profile … More Except Principal Investigator TMAH / SOI / CMOS / 単電子トランジスタ / 極微細MOSトランジスタ / 二重ゲート構造 / トンネル障壁 / ビームチャネル / フィールド・シールド / 多結晶シリコン埋め込み / 増速酸化 / 自己整合 / ハンプ電流 / シリコン酸化膜 / キャパシタ / 集積回路 / ULSI / BST / 短チャネル効果 / SOI(Silicon On Insulator)基板 / 酸化膜障壁極微細トランジスタ / 作成要素技術開発 / 電子ビーム描画 / 多結晶シリコンドット / トレンチ形成 / 選択エッチ / 非線形電流-電圧特性 / 側壁トランジスタ / 異方性エッチング / アスペクト比 / 光配線 / エピタキシャルリフトオフ法 / 高速化 / 界面活性剤 / 圧力印加 / 発光素子搭載技術 / グレーティングカプラ / 無欠陥光導波路 / 発光素子層高速剥離 / AlAs剥離層膜厚依存性 / 消泡剤 / 溶液加熱 / エピタキシャルリフトオフ(ELO) / 圧力 / 信号伝送 / サファイア基板 / optical waveguide / epitaxial lift-off / high speed / surfactant / high pressure / mounting of LED / grating coupler / optical waveguide with no crack / シリコン選択成長 / 原子層成長 / 自己停止機構 / ジシラン / 間欠照射 / シリコン細線 / トランジスタ / クーロンブロッケイド / 塩化水素脱離反応 / 2インチSiウェハ / ガスフローパターン / 金属触媒 / 光・熱触媒反応 / 多結晶シリコン / 微細トランジスタ / 低温電気伝導 / クーロン振動 / 非線形電気伝導 / シリコンドット / 低抵抗 / ジシラン熱分解 / シリコン窒化膜 / 活性化エネルギー / Selective deposition of silicon / Atomic-layer deposition / Self-limiting mechanism / Dislane / Intermittent exposure method / Silicon narrow wire / Transistor / Coulomb blockade / Cu イオン / ポーラスMSQ / メチルポリシラザン / メチルシルセスキオキサン / 低誘電率膜 / イオンドリフト速度 / プールフレンケル電流 / ポーラス / 層間絶縁膜 / 銅 / 配線 / メチル / イオンドリフト / 有機膜 / 多層配線 / 銅配線 / 金属電極 / 拡散速度 / ドリフト / Cu Ion / Porous MSQ / methylpolysilazane / methylsilsesquioxane / Low-k / ion-drift velocity / capacitor / Pool e-Frenkel current / バリウム / ストロンチウム / チタン / エネルギーバンド / バンドギャップ / 誘導結合プラズマ / スパッタリング / ペロブスカイト / 高誘電率 / DRAM / 電極 / リーク電流 / 高誘電率膜 / 電極金属 / チタン酸バリウム / チタン酸ストロンチウム / barium / strontium / titanium / energy band / band gap / inductively-coupled-plasma / sputtering / フィールドシールド / 鞍型トランジスタ / 素子分離構造 / 電界集中 / 漏洩電流 / 鞍型ゲート / 局所酸化法 / 不純物濃度依存酸化 / プラズマドーピング / 側壁ドーピング / Beam channel / Field shield / Polysilicon fill / Enhanced oxidation / Self-aligning Less

Research on shallow junction formation and isolation for Ge channel devicesPrincipal Investigator
- Principal Investigator
  
  SHIBAHARA Kentaro
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
超高速・超微細・低消費電力ビームチャネル型CMOSトランジスタの開発
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hiroshima University
Conduction Control in Ultra-High Density Beam-Channel CMOS Transistor
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Hiroshima University
Study on fabrication method for ultra-small transistors by means of selective atomic-layer deposition
- Principal Investigator
  
  YOKOYAMA Shin
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Interface Control of Nanoporous/Organic Low-k Dielectrics and Metal Electrode
- Principal Investigator
  
  KIKKAWA Takamaro
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Interface Control of Perovskite High-dielectric-constant Film and Metal Electrode
- Principal Investigator
  
  KIKKAWA Takamaro
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Evaluation of 2D Dopant Profile around source and drain of MOSFETsPrincipal Investigator
- Principal Investigator
  
  SHIBAHARA Kentaro
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
2重ゲート極微細MOSトランジスタによる単電子制御
- Principal Investigator
  
  横山新
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hiroshima University
2重ゲート極微細MOSトランジスタによる単電子制御
- Principal Investigator
  
  横山新
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
Investigation on Pileup of Arsenic and Antimony Ion-implanted into SiliconPrincipal Investigator
- Principal Investigator
  
  SHIBAHARA Kentaro
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
2重ゲート極微細MOSトランジスタによる単電子制御
- Principal Investigator
  
  YOKOYAMA Shin
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
Study for Optoelectronic Integrated Circuits with Light Emitting Devices by Epitaxial Lift-off Technique
- Principal Investigator
  
  YOKOYAMA Shin
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  HIROSHIMA UNIVERSITY

All 2009 2008 2007

All Presentation

[Presentation] Anomalous Amorphization Resistance of Ge against (11)^B^+ Implantation2009
- Author(s)
  K. Shibahara, T. Eto and T. Fukunaga
- Organizer
  The 9th International Workshop on Junction Technology 2009
- Place of Presentation
  Kyoto, Japan(to be presented)
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] Critical Amorphization Dose and Amorphization Mechanism for Ion Implantation into Germanium2009
- Author(s)
  K. Osada and K. Shibahara
- Organizer
  Conf. Digest of The 2009 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] Ge Shallow Junction Formation by As implantation and Flash Lamp Annealing2009
- Author(s)
  K. Osada and K. Shibahara
- Organizer
  Proceedings of 2009 Int. Symp.on VLSI Technology, Systems, and Applications
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] GeへのSD拡散層形成技術2008
- Author(s)
  芝原健太郎
- Organizer
  応用物理学関係連合講演会講演予稿集
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] GeへのSD拡散層形成技術2008
- Author(s)
  芝原健太郎
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] 極淺接合形成のためのイオン注入によるGeアモルファス化プロセス2008
- Author(s)
  長田光生, 芝原健太郎
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  京都府京都市
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] As, P, B注入によるGe基板のアモルファス化2008
- Author(s)
  長田光生, 福永哲也, 芝原健太郎
- Organizer
  応用物理学関係連合講演会講演予稿集
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] Xe+プレアモルファス化注入を用いたGe n^+/p接合形成2007
- Author(s)
  福永哲也, 芝原健太郎
- Organizer
  電子情報通信学会SDM2007年12月研究会
- Place of Presentation
  奈良県生駒市
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PROJECT-19560344
[Presentation] 低ドーズXe^+プレアモルファス化注入を用いたGeのn^+/p接合形成2007
- Author(s)
  福永哲也, 芝原健太郎
- Organizer
  応用物理学会学術講演会講演予稿集
- Place of Presentation
  北海道札幌市
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19560344

1. YOKOYAMA Shin (80144880)

# of Collaborated Projects: 10 results

# of Collaborated Products: 0 results
2. MATTAUSCH Hans Jurgen (20291487)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. NAGATA Makoto (40274138)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. SUNAMI Hideo (10311804)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. KIKKAWA Takamaro (60304458)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. NAKAJIMA Anri (70304459)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SHIBAHARA Kentaro 芝原 健太郎

Research Projects

Research Products

Co-Researchers

Research on shallow junction formation and isolation for Ge channel devicesPrincipal Investigator

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Evaluation of 2D Dopant Profile around source and drain of MOSFETsPrincipal Investigator

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Investigation on Pileup of Arsenic and Antimony Ion-implanted into SiliconPrincipal Investigator

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Research Field

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[Presentation] Anomalous Amorphization Resistance of Ge against (11)^B^+ Implantation2009

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Critical Amorphization Dose and Amorphization Mechanism for Ion Implantation into Germanium2009

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Ge Shallow Junction Formation by As implantation and Flash Lamp Annealing2009

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] GeへのSD拡散層形成技術2008

SHIBAHARA Kentaro 芝原健太郎