Kakushima Kuniyuki 角嶋邦之

… Alternative Names

KAKUSHIMA Kuniyuki 角嶋邦之

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Researcher Number	50401568
Other IDs
Affiliation (Current)	2025: 東京科学大学, 工学院, 准教授
Affiliation (based on the past Project Information) *help	2016 – 2023: 東京工業大学, 工学院, 准教授 2015: 東京工業大学, 大学院総合理工学研究科, 准教授 2014 – 2015: 東京工業大学, 総合理工学研究科(研究院), 准教授 2010 – 2011: 東京工業大学, 大学院・総合理工学研究科, 准教授 2007 – 2009: 東京工業大学, 大学院・総合理工学研究科, 助教 2006: 東京工業大学, 大学院総合理工学研究科, 助手
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Nano/Microsystems / Electronic materials/Electric materials / Science and Engineering / Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator 強誘電体 Except Principal Investigator FinFET / GaN / パワーデバイス / 立体チャネル / 選択成長 / 電気・電子材料 / 半導体 / トランジスタ / Fin FET … More / 窒化ガリウム / マイクロナノデバイス / 培養チャンバ / マイクロ流路 / ナノバイオ / マイクロ・ナノデバイス / MEMS液体セル / 動態観察 / 細菌 / 液体セル / 電子顕微鏡 / MEMS / 結晶成長 / 電子デバイス / GaNデバイス / 窒化ガリウムGaN / ボロン / 半導体デバイス / 活性サイト / 半導体の不純物 / 硫化モリブデン / 二硫化モリブデン / 砒素 / シリコン / 半導体物性 / 二硫化モリブデン（MoS2） / ヒ素（As） / シリコン（Si） / 光電子回折 / 層状物質 / 電子状態 / 原子ホログラフィー / 電気的活性化 / 原子配列構造 / 二硫化モリブデン(MoS2) / ヒ素(As) / シリコン(Si) / 不純物 / 光電子ホログラフィー / 界面制御 / 不純物ドーピング / 表面・界面物性 / 固定電荷 / 価数変化 / シリケート / 界面ダイポール / 高誘電体薄膜 / Niシリサイド / 短チャネル効果 / エネルギー障壁 / drain / Schottky source / しきい値 / 三次元構造MOSFET / 数値解析 / ショットキー接合 / 3次元 / MOSFET / オン電流 / ショットキー / 特性ばらつき / ロバストネス / 3次元構造 / 感度解析 / シリサイド / ダブルゲート / CMOS / ゆらぎ / ばらつき Less

強誘電体の電極界面付近の分極反転に伴う欠陥形成とその制御法Principal Investigator
- Principal Investigator
  
  角嶋邦之
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2015 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
MEMS for electron microscopy to study nanobiology and its application to observation of bacterial dynamics
- Principal Investigator
  
  Ishida Tadashi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Nano/Microsystems
- Research Institution
  Tokyo Institute of Technology
Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo Institute of Technology
Robustness of Three-Dimensional MOSFETs
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology

[Journal Article] Identification of compressive strain in thin ferroelectric Al1-xScN films by Raman spectroscopy2024
- Author(s)
  Tokita Yukimura、Hoshii Takuya、Wakabayashi Hitoshi、Tsutsui Kazuo、Kakushima Kuniyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 4 Pages: 04SP31-04SP31
- DOI
  10.35848/1347-4065/ad2f16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04237
[Journal Article] Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement2024
- Author(s)
  Chen Si-Meng、Hoshii Takuya、Wakabayashi Hitoshi、Tsutsui Kazuo、Chang Edward Yi、Kakushima Kuniyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 3 Pages: 03SP45-03SP45
- DOI
  10.35848/1347-4065/ad21bd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04237
[Journal Article] Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing2019
- Author(s)
  Shimizu Jun'ichi、Ohashi Takumi、Matsuura Kentaro、Muneta Iriya、Kuniyuki Kakushima、Tsutsui Kazuo、Ikarashi Nobuyuki、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 7 Pages: 2-6
- DOI
  10.1109/jeds.2018.2854633
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration2018
- Author(s)
  Matsuura Kentaro、Shimizu Jun'Ichi、Toyama Mayato、Ohashi Takumi、Muneta Iriya、Ishihara Seiya、Kakushima Kuniyuki、Tsutsui Kazuo、Ogura Atsushi、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 1246-1252
- DOI
  10.1109/jeds.2018.2883133
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization2018
- Author(s)
  K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, and H. Wakabayashi
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: － Issue: 7 Pages: 1-5
- DOI
  10.1007/s11664-018-6191-z
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing2018
- Author(s)
  Toyama Mayato、Ohashi Takumi、Matsuura Kentaro、Shimizu Jun’ichi、Muneta Iriya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 7S2 Pages: 07MA04-07MA04
- DOI
  10.7567/jjap.57.07ma04
- NAID
  210000149377
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography2017
- Author(s)
  Tsutsui Kazuo、Matsushita Tomohiro、Natori Kotaro、Muro Takayuki、Morikawa Yoshitada、Hoshii Takuya、Kakushima Kuniyuki、Wakabayashi Hitoshi、Hayashi Kouichi、Matsui Fumihiko、Kinoshita Toyohiko
- Journal Title
  
  Nano Letters
  
  Volume: 17 Issue: 12 Pages: 7533-7538
- DOI
  10.1021/acs.nanolett.7b03467
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105007, KAKENHI-PLANNED-26105013, KAKENHI-PLANNED-26105014, KAKENHI-PROJECT-15KK0167, KAKENHI-PLANNED-26105010, KAKENHI-PROJECT-17H02911
[Journal Article] Quantitative analysis of sputter-deposited MoS2 properties on SiO2 substrate roughness2017
- Author(s)
  Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
  
  Applied Physics Express (APEX)
  
  Volume: 10
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness2017
- Author(s)
  Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 4 Pages: 0412021-0412024
- DOI
  10.7567/apex.10.041202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] La2O3 gate dielectrics for AlGaN/GaN HEMT2016
- Author(s)
  J. Chen, T. Kawanago, H. Wakabayashi, K. Tsutsui, H. Iwai, D. Nohata, H. Nohira, K. Kakushima
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 60 Pages: 16-19
- DOI
  10.1016/j.microrel.2016.02.004
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors2016
- Author(s)
  Y. Takei, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55-4 Issue: 4 Pages: 040306-040306
- DOI
  10.7567/jjap.55.040306
- NAID
  210000146222
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs2015
- Author(s)
  Takumi Ohashi, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DN08-04DN08
- DOI
  10.7567/jjap.54.04dn08
- NAID
  210000145087
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25889022, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers2014
- Author(s)
  Y. Takei, M. Kamiya, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai
- Journal Title
  
  Physica Status Solidi A
  
  Volume: - Issue: 5 Pages: 1104-1109
- DOI
  10.1002/pssa.201431645
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures2014
- Author(s)
  Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka H. Iwai
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Pages: 265-270
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 33 Issue: 3 Pages: 423-425
- DOI
  10.1109/led.2011.2178111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEEElectron Dev. Lett
  
  Volume: Vol.33 Pages: 423-425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 59 Issue: 2 Pages: 269-276
- DOI
  10.1109/ted.2011.2174442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100)2012
- Author(s)
  M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 1513-1516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H. Wong, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films on Si(100)2012
- Author(s)
  M. Mamatrishat
- Journal Title
  
  Vacuum
  
  Volume: 86(10) Issue: 10 Pages: 1513-1516
- DOI
  10.1016/j.vacuum.2012.02.050
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: Vol.59 Pages: 269-276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H.Wong, B.L.Yang, K.Kakushima, P.Ahmet, H.Iwai
- Journal Title
  
  Vacuum
  
  Volume: 86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Solid-StateElectron
  
  Volume: Vol.68 Pages: 68-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M.Kouda, T.Kawanago, P.Ahmet, K.Natori,T.Hattori, H.Iwai, K.Kakushima, A.Nishiyama, N.Sugii, K.Tsutsui
- Journal Title
  
  Journal of Vacuum Science & Technology
  
  Volume: 29 Issue: 6 Pages: 62202-62202
- DOI
  10.1116/1.3660800
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm2011
- Author(s)
  M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm2011
- Author(s)
  M.Kouda, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physcis
  
  Volume: 50
- NAID
  210000071407
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T.Kawanago, Y.Lee, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Solid-State Electronics
  
  Volume: 68 Pages: 68-72
- DOI
  10.1016/j.sse.2011.10.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm_2O_3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M. Kouda, T. Kawanago, P. Ahmet, K. Natori, T. Hattori, H. Iwai, K. Kakushima, A. Nishiyama, N. Sugii, K. Tsutsui
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: Vol.29 Pages: 62202-62202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors : Separation of Short Channel Effects2010
- Author(s)
  Y.Kobayashi, K.Tsutsui, K.Kakushima, P.Ahmet, V.P.Rao, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physics 49(掲載決定)
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.R.Rao, K.Tsutui, H.Iwai
- Journal Title
  
  Microelectronics Reliability 50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Electrical Characteristics of Rare Earth(La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric2010
- Author(s)
  K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  ECSTrans
  
  Volume: Vol.27 Pages: 1120-1134
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects2010
- Author(s)
  Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys Vol.49
  
  Pages: 44201-44201
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Characterization of flatband voltage roll-off and roll-up behavior in La_2O_3/silicat gate dielectric2010
- Author(s)
  K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Solid-State Electron
  
  Volume: Vol54 Pages: 720-723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Characterization of flatband voltage roll-off and roll-up behavior in La_2 O_3/silicate gate dielectric2010
- Author(s)
  K.Kakushima, et al.
- Journal Title
  
  Solid-State Electronics (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
- Journal Title
  
  Microelectronics Reliability Vol.50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans Vol.16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
- Journal Title
  
  ECS Transactions 16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Crystallographic Orientation Dependent Electrical Characteristics of La_2O_3 MOS Capacitors2009
- Author(s)
  H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans
  
  Volume: Vol.25 Pages: 339-345
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi_22008
- Author(s)
  Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering 85
  
  Pages: 315-319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni-silicide Films on Heavily Doped n^+ and P^+ Si Substrates2008
- Author(s)
  Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow and Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates2008
- Author(s)
  P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
- Journal Title
  
  Microelectronic Engineering Vol.85
  
  Pages: 1642-1645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, and H. Iwai
- Journal Title
  
  ECS Transaction Vol. 6, No. 4
  
  Pages: 83-88
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  ECS Transaction 6
  
  Pages: 83-88
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y.Kobahashi, K.Tsutsui, K.Kakushima, V.Hariharan, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  SOI Device Technology 13 (ECS Transaction-Chicago) 3(出版予定)(掲載決定)
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  IEICE Trans. on Electronics Vol.E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahmet, K. Kakushima and H. Iwai
- Journal Title
  
  ECS Transaction 11
  
  Pages: 207-213
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y.Kobayashi, C.R.Manoj, K.Tsutsui, V.Hariharan, K.Kakushima, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  IEICE Transactions on Electronics (出版予定)(掲載決定)
- NAID
  110007541196
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions vol. E90-C, No.10
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Thickness-dependent Strain Measurement of Ferroelectric AlScN Films2023
- Author(s)
  Y. Tokita, SL. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima
- Organizer
  International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] Thickness-Dependent Flat-Band Voltage of Ferroelectric Al0.7Sc0.3N Films on SiO2/Si Substrate2023
- Author(s)
  R. Nonaka, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima
- Organizer
  243rd ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] A Ferroelectric Property Tailoring Method of Al0.7Sc0.3n Films by Sputter-Deposition Pressure2023
- Author(s)
  Y. Tokita, K. Tsutsui, K. Kakushima. H. Wakabayashi, T. Hoshii
- Organizer
  243rd ECS meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] Thickness-Dependent Flat-Band Voltage of Ferroelectric Al0.7Sc0.3n Films on SiO2/Si Substrate2023
- Author(s)
  R. Nonaka, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima
- Organizer
  243rd ECS meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] A Ferroelectric Property Tailoring Method of Al0.7Sc0.3n Films by Sputter-Deposition Pressure2023
- Author(s)
  Y. Tokita, T. Hoshii, K. Tsutsui, H. Wakabayashi, K. Kakushima
- Organizer
  243rd ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] 選択成長法を用いたGaN FinFETの作製：成長窓形成プロセス改善2022
- Author(s)
  久恒悠介、太田貴士、佐々木満孝、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 高自発分極AlScN膜の導入によるGaN HEMTのしきい値変化2022
- Author(s)
  野中隆聖, 星井拓也, 若林整, 筒井一生, 角嶋邦之
- Organizer
  第88回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] スパッタリング時の圧力によるAlScN膜への影響2022
- Author(s)
  時田幸村, Tsai Sung-Lin, 星井拓也, 若林整, 筒井一生, 角嶋邦之
- Organizer
  第88回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04237
[Presentation] 横型GaN系FinFETにおける異なるチャネル伝導形態の比較検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN FinFETの低オン抵抗・高耐圧化に向けたドリフト領域拡幅の検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN 系FinFET2021
- Author(s)
  筒井一生,濱田拓也,高山研,金相佑,星井拓也,角嶋邦之,若林整,高橋言緒,井手利英,清水三聡
- Organizer
  電気学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN FinFETの作製：成長窓形成プロセスの検討2021
- Author(s)
  太田貴士、佐々木満考、高山研、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 横型GaN FinFETの構造最適化についての検討2020
- Author(s)
  久恒悠介、金相佑、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良2020
- Author(s)
  高山研、太田貴士、佐々木満孝、向井勇人、濱田拓也、高橋言雄、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、小川達博、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing2019
- Author(s)
  Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2019
- Author(s)
  濱田拓也、向井勇人、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces2019
- Author(s)
  Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Kazuo Tsutsui
- Organizer
  13tu Int. Conf. on Nitride Semiconductor (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析2019
- Author(s)
  筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE using Triethylgallium2019
- Author(s)
  Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, and Kazuo Tsutsui
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN Fin構造選択成長における低抵抗領域の発生原因の検討2019
- Author(s)
  高山研、向井勇人、濱田拓也、高橋言緒、井手利英、清水三総、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2019
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減2019
- Author(s)
  松浦賢太朗、濱田昌也、坂本拓朗、谷川晴紀、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 選択成長法を用いたGaN FinFETの作製2019
- Author(s)
  向井勇人、髙山研、濱田拓也、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2018
- Author(s)
  濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生
- Organizer
  第82回半導体・集積回路シンポジウム
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] 絶縁膜を通した硫黄粉末アニールによるスパッタMoS2膜の結晶性改善2018
- Author(s)
  濱田昌也、松浦賢太郎、谷川晴紀、大橋匠、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善2018
- Author(s)
  五十嵐智、松浦賢太朗、濱田昌也、谷川晴紀、坂本拓朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの貫通転位の低減2018
- Author(s)
  濱田拓也、黒岩宏紀、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate2018
- Author(s)
  Kentaro Matsuura, Jun’ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Organizer
  2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去2018
- Author(s)
  谷川晴紀、松浦賢太朗、濱田昌也、坂本拓朗、宗田伊理也、星井拓也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング2018
- Author(s)
  向井勇人、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Electrical properties of selectively grown GaN channel for FinFETs2018
- Author(s)
  Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, and Kazuo Tsutsui
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Migration制御したスパッタリング法による2次元層状MoS2成膜2018
- Author(s)
  大橋匠、坂本拓朗、松浦賢太朗、清水淳一、外山真矢人、石原聖也、日比野祐介、宗田伊理也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価2018
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、永山勉、樋口隆弘、加藤慎一、谷村英昭、角嶋邦之、若林整、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, and Toyohiko Kinoshita
- Organizer
  18th Int. Workshop on Junction Technology (IWJT2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites2018
- Author(s)
  Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, 他12名
- Organizer
  14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film2018
- Author(s)
  M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2018
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減2018
- Author(s)
  坂本拓朗、大橋匠、松賢太朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy2018
- Author(s)
  T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地材料依存性2017
- Author(s)
  大橋匠、宗田伊理也、石原聖也、日比野祐介、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの形状制御2017
- Author(s)
  黒岩宏紀、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Si結晶中にドープされたAsの異なる原子配列構造と深さ分布2017
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、角嶋邦之、若林整、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性2017
- Author(s)
  外山真矢人、大橋匠、松浦賢太朗、清水淳一、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] SiにドープされたAsの光電子ホログラフィー評価と電気的活性化との関係2017
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、星井拓也、角嶋邦之、若林整、林好一、松井文彦、森川良忠、下村勝、木下豊彦
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2ターゲット高温スパッタ法のロングスロー化によるMoS2膜結晶性向上2017
- Author(s)
  坂本拓朗、大橋匠、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製2017
- Author(s)
  篠原健朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT構造におけるドット形凹凸AlGaN層形成によるコンタクト抵抗低減の検討2017
- Author(s)
  渡部拓巳、久永真之祐、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Crystallinity Improvement using Migration Enhancement Method for Sputtered-MoS2 Film2017
- Author(s)
  Shin Hirano, Jun’ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜上ALD-Al2O3膜の成長過程観察2017
- Author(s)
  谷川晴紀、大橋匠、松浦賢太朗、清水淳一、外山真矢人、早川直希、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] トンネル電極を形成したスパッタMoS2膜における電流の障壁膜厚依存性2017
- Author(s)
  早川直希、宗田伊理也、大橋匠、松浦賢太朗、清水淳一、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing2017
- Author(s)
  M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, and H. Wakabayashi
- Organizer
  Advanced Metallization Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography2017
- Author(s)
  Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui
- Organizer
  11th International Symposium on Atomic Level Characterizations for New Materials and Devices ’17
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] SiにドープされたAsの光電子ホログラフィーによる評価2016
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、木下豊彦、星井拓也、角嶋邦之、若林整、松井文彦、下村勝
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] デバイス高性能化に向けたSi中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所（柏市）
- Year and Date
  2016-12-20
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film2016
- Author(s)
  K. Matsuura, T. Ohashi, I. Muneta S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura and H. Wakabayashi
- Organizer
  47th IEEE Semiconductor Interface Specialists Conference (SISC2016)
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] TFT応用に向けたRFマグネトロンスパッタリング法によるMoS2膜の形成2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野裕介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会
- Place of Presentation
  キャンパス・イノベーションセンター（東京）
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けたGaN選択成長の検討2016
- Author(s)
  黒岩宏紀、武井優典、高橋言緒、井手利英、清水三聡、筒井一生、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming- Gas Annealing for 3D-IC2016
- Author(s)
  J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials (SSDM2016)
- Place of Presentation
  つくば国際会議場（つくば市）
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィーによる Si 中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  第10回物性科学領域横断研究会
- Place of Presentation
  神戸大学（神戸市）
- Year and Date
  2016-12-09
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜のフォーミングガス雰囲気ポストアニーリングによる電気特性向上2016
- Author(s)
  清水淳一、大橋匠、松浦賢太朗、角嶋邦之、筒井一生、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果のメカニズム解明2016
- Author(s)
  武井優典、下田智裕、高橋昌靖、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] S/Mo比増加によるMoS2膜の低キャリア濃度化2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野祐介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果の凹凸構造サイズ依存性2015
- Author(s)
  下田智裕、武井優典、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns2015
- Author(s)
  Yusuke Takei, Tomohiro Shimoda, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai
- Organizer
  2015 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硫黄粉末アニールの減圧化によるスパッタMoS2薄膜の結晶性向上2015
- Author(s)
  松浦賢太朗、大橋匠、石原聖也、澤本直美、日比野祐介、須田耕平、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] ランタン酸化膜を用いたhigh-k/Si直接接合2012
- Author(s)
  角嶋邦之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  静岡
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21246008
[Presentation] ランタン酸化膜を用いたhigh-k/Si直接接合2012
- Author(s)
  角嶋邦之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  三島、静岡県
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21246008
[Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs2010
- Author(s)
  P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
- Organizer
  10th Int. Workshop on Junction Technology (IWJT2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  China Semiconductor Technology International Conference(CSTIC)
- Place of Presentation
  上海、中国
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010
- Author(s)
  茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの構造ばらつきによるオン電流のばらつきの検討2009
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009
- Author(s)
  H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  216^<th> Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009
- Author(s)
  茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009
- Author(s)
  小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Short-channel effects on FinFETs induced by inappropriate fin widths2009
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.Ramgopal Rao, K.Tsutsui, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects2008
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Ibaraki, Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
- Organizer
  Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008
- Author(s)
  Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
- Organizer
  7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETにおけるショートチャネル効果のフィン幅依存性2008
- Author(s)
  小林勇介, 角嶋邦之, パールハットアヘメト, ラムゴパルラオ, 筒井一生, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008
- Author(s)
  アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, Angada B. Sachidc, K. Tsutsui, K. Kakushima, P. Ahmet, V. Ramgopal Rao and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, K uniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silicide on N^+-Si by Direct Deposition of Group III Element (A1,B) Thin Film at Ni/Si Interface2008
- Author(s)
  K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, and H. Iwai
- Organizer
  Materials for Advanced Metalization (MAM2008)
- Place of Presentation
  Dresden, Germany
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの閾値変動における短チャネル効果による影響の切り分け2008
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Organizer
  211th ECS Meeting
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahment, K. Kakushima and H. Iwai
- Organizer
  212th ECS Meeting
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討2007
- Author(s)
  小林勇介, 角嶋邦之, Ahmet P., Rao V.R., 筒井一生, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 金属ゲート電極材料のAlGaN/GaN HEMT のリーク電流への影響
- Author(s)
  大賀一樹、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法によるMoS2膜の形成と電気特性
- Author(s)
  松浦賢太朗，大橋匠，山口晋平，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT構造への凹凸AlGaN層導入によるコンタクト抵抗の低減
- Author(s)
  武井優典、下田智裕、筒井一生、齋藤渉、角嶋邦之、若林整、片岡好則、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硬Ｘ線光電子分光を用いた金属/AlGaN/GaN のバンド構造の解析
- Author(s)
  大賀一樹，陳江寧，川那子高暢，角嶋邦之，野平博司，片岡好則，西山彰，杉井信之，若林整，筒井一生，名取研二，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT 構造のAlGaN層内部の電子トラップ解析
- Author(s)
  馬場俊之、永久雄一、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN系2次元電子ガスへのノンアロイコンタクトにおけるコンタクト抵抗のAlGaN層厚依存性による抵抗成分分析
- Author(s)
  武井優典，岡本真里，シンマン，萱沼玲，下田智裕，三井陽平，齋藤渉，筒井一生，角嶋邦之，若林整，片岡好則，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地平坦化による電気特性向上
- Author(s)
  大橋匠、山口晋平、松浦賢太朗、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure
- Author(s)
  M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito
- Organizer
  IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2014)
- Place of Presentation
  Knoxville, Tennessee, USA
- Year and Date
  2014-10-13 – 2014-10-15
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積MoS2膜形成に向けたMoの硫化プロセスの検討
- Author(s)
  松浦賢太朗、大橋匠、山口晋平、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法におけるMoS2薄膜化と電気特性
- Author(s)
  大橋匠，山口晋平，松浦賢太朗，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers
- Author(s)
  Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, and Hiroshi Iwai
- Organizer
  The International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs
- Author(s)
  T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura and H. Wakabayashi
- Organizer
  Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  つくば国際会議場（茨城県）
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PLANNED-26105014

1. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 4 results

# of Collaborated Products: 129 results
2. IWAI Hiroshi (40313358)

# of Collaborated Projects: 3 results

# of Collaborated Products: 80 results
3. 星井拓也 (20611049)

# of Collaborated Projects: 3 results

# of Collaborated Products: 34 results
4. PARHAT Ahmet (00418675)

# of Collaborated Projects: 2 results

# of Collaborated Products: 62 results
5. 清水三聡 (10357212)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
6. HATTORI Takeo (10061516)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
7. Ishida Tadashi (80517607)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. OMATA Tatsuo (50175270)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 武田さくら (30314537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 若林整 (80700153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 61 results
11. 中島昭 (60450657)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 山田永 (60644432)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. Sato Shintaro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. Mori Daisuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
15. Kawamura Tomoaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. OHNO Teruaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. TAKATANI Nobuyuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. MORIKAWA Yoshitada

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
19. MATSUI Fumihiko

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
20. 若林裕助

# of Collaborated Projects: 0 results

# of Collaborated Products: 6 results
21. 林好一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
22. 松下智裕

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
23. 木下豊彦

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Kakushima Kuniyuki 角嶋 邦之

KAKUSHIMA Kuniyuki 角嶋 邦之

Research Projects

Research Products

Co-Researchers

強誘電体の電極界面付近の分極反転に伴う欠陥形成とその制御法Principal Investigator

Principal Investigator

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GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures

Principal Investigator

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Review Section

Research Institution

GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth

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Research Institution

MEMS for electron microscopy to study nanobiology and its application to observation of bacterial dynamics

Principal Investigator

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Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices

Principal Investigator

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Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface

Principal Investigator

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Robustness of Three-Dimensional MOSFETs

Principal Investigator

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[Journal Article] Identification of compressive strain in thin ferroelectric Al1-xScN films by Raman spectroscopy2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization2018

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Journal Title

DOI

Data Source

[Journal Article] Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography2017

Author(s)

Kakushima Kuniyuki 角嶋邦之

KAKUSHIMA Kuniyuki 角嶋邦之