Fujishiro Hiroki 藤代博記

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FUJISHIRO Hiroki 藤代博記

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Researcher Number	60339132
Other IDs
Affiliation (Current)	2025: 東京理科大学, 先進工学部電子システム工学科, 教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 東京理科大学, 先進工学部電子システム工学科, 教授 2016 – 2018: 東京理科大学, 基礎工学部電子応用工学科, 教授 2014: 東京理科大学, 基礎工学部, 教授 2013: 東京理科大学, 基礎工学部, 教授(Professor) 2010 – 2012: 東京理科大学, 基礎工学部, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator 極限性能トランジスタ / InGaSb / HEMT / テラヘルツ領域 / 量子補正モンテカルロシミュレーション / ナローギャップ半導体 / 遅延時間解析 / fmax / fT / 歪みバンドエンジニアリング … More / GaInSb / 電子・電気材料 / 低消費電力・高エネルギー密度 / テラヘルツ/赤外材料・素子 / 電子デバイス・機器 / ラフネス散乱 / InSb / 遮断周波数 / 電子移動度 / 格子歪 / 電子有効質量 / 高電子移動度トランジスタ / InP / InGaAs / MOSFET / CMOSロードマップ / 歪バンド構造 / III－V族化合物半導体 / III－VMOSFET / CMOS ロードマップ / 量子輸送 / バリスティック伝導 / III-V族化合物半導体 / III-VMOSFET … More Except Principal Investigator シミュレーション / 分子線エピタキシー法 / 量子井戸構造 / InAsSb / 量子ドット / 半導体 / VASP / バンド計算 / 遮断周波数 / バンド構造計算 / モンテカルロ計算 / 電子密度 / 電子移動度 / テラヘルツ帯 / エピタキシャル / マイクロ・ナノデバイス / 半導体物性 / Ⅲ－Ⅴ族化合物半導体 / エピタキシャル成長 / MOSFET / 表面・界面物性 / Ⅲ-Ⅴ族化合物半導体 / 電子・電気材料 Less

テラヘルツデバイスへ向けた歪みInAsSb量子ナノ構造の作製とその物性に関する研究
- Principal Investigator
  
  遠藤聡
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Science
Study on the growth of InAsSb channel quantum well structures for terahertz transistors
- Principal Investigator
  
  ENDOH Akira
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Science
Development of Ultra-high Performance InGaSb Channel THz TransistorsPrincipal Investigator
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo University of Science
Development of Ultra-High Performance Sb-Based Teraherts TransistorsPrincipal Investigator
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science
Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
- Principal Investigator
  
  YASUDA Tetsuji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Quantum Corrected Simulation of III-V MOSFETsPrincipal Investigator
- Principal Investigator
  
  FUJISHIRO Hiroki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science

[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024
- Author(s)
  神内智揮，海老原怜央，吉田陸人，河野亮介，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Bowing of Energy Gap Curve for InAsSb Calculated Using VASP Based on Hybrid Density Functional Theory2024
- Author(s)
  H. I. Fujishiro and A. Endoh
- Journal Title
  
  Activity Report / Supercomputer Center, Institute for Solid State Physics, The University of Tokyo
  
  Volume: 2023
- Open Access
- Data Source
  KAKENHI-PROJECT-21K04158
[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024
- Author(s)
  河野亮介，海老原怜央，吉田陸人，神内智揮，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023
- Author(s)
  藤代博記，遠藤聡，羽鳥小春，吉武優輔，吉田陸人，海老原怜央，町田龍人，渡邊一世，山下良美，原紳介，笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2022年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] ダブルTe ドープGaInSb HEMT構造の電気的特性2023
- Author(s)
  尾曽雅宗、羽鳥小春、海老原怜央、神内智揮、河野亮介、遠藤聡、藤代博記
- Journal Title
  
  第70回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Journal Title
  
  第84回応用物理学会秋季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] InSb/Ga0.22In0.78Sb 複合チャネルHEMT構造の電気的特性2023
- Author(s)
  神内智揮，羽鳥小春，海老原怜央，尾曽雅宗，河野亮介，遠藤聡，藤代博記
- Journal Title
  
  第70回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2022 (CSW2022)
  
  Volume: - Pages: 67-67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピタキシャル構造に対してスケーリングを施したGaInSbチャネルHEMT2022
- Author(s)
  藤代博記、遠藤　聡、礒前雄人、吉武優輔、國澤宗真、羽鳥小春、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2021年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Journal Title
  
  Abstracts of 14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
  
  Volume: - Pages: 12-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2021 (CSW2021)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Journal Title
  
  信学技報
  
  Volume: 121 Pages: 44-47
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2021
- Author(s)
  藤代博記、遠藤　聡、林　拓也、岸本尚之、國澤宗真、礒前雄人、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2020年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発2018
- Author(s)
  渡邊一世,山下良美,遠藤聡,原紳介,笠松章史, 吉田智洋,井上和孝,中田健,眞壁勇夫,磯野恭佑,岡直希,原田義彬,竹内淳,町田龍人,藤代博記
- Journal Title
  
  電気学会電子デバイス研究会技術報告
  
  Volume: EDD-18
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] Comparative study on noise characteristics of As and Sb-based high electron mobility transistors2017
- Author(s)
  T.Takahashi, S.Hatsushiba, S.Fujikawa, H.I.Fujishiro
- Journal Title
  
  Physica Status Solidi A-Applications and Materials Science
  
  Volume: 214 Issue: 3 Pages: 1600599-1600599
- DOI
  10.1002/pssa.201600599
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 117 Pages: 33-36
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures2015
- Author(s)
  Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, and Tatsuro Maeda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 2 Pages: 021201-021201
- DOI
  10.7567/jjap.54.021201
- NAID
  210000144768
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] III-V DG MOSFETにおける遅延時間の発生メカニズムの解析2014
- Author(s)
  矢島悠貴、大濱諒子、藤川紗千恵、藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 114 Pages: 25-28
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Journal Title
  
  Abstracts of 40th International Symposium on Compound Semiconductors (ISCS2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe, and A. Kasamatsu
- Journal Title
  
  Proceedings of 25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 真空アニール法がAl2O3/GaSb MOS界面に与える影響2013
- Author(s)
  後藤高寛, 藤川紗千恵, 藤代博, 小倉睦郎, 安田哲二, 前田辰郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 113 Pages: 37-42
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials2013
- Author(s)
  Akio Nishida, Kei Hasegawa, Ryoko Ohama, Sachie Fujikawa, Shinsuke Hara, and Hiroki I. Fujishiro
- Journal Title
  
  Physica Status Solidi c: current topics in solid state physics
  
  Volume: 10 Issue: 11 Pages: 1413-1416
- DOI
  10.1002/pssc.201300264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Journal Title
  
  Proceedings of 24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
  
  Pages: 237-240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 9 Issue: 2 Pages: 346-349
- DOI
  10.1002/pssc.201100275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 112 Pages: 37-42
- NAID
  110009626392
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Journal Title
  
  Proc. International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H. Watanabe, S.Hara, H.I.Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato, H. Watanabe, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 79-84
- NAID
  110008800765
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J.Sato, H.I.Fujishiro, A.Endo, Y.Yamashita, I.Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Pages: 306-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S. Hara, H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2011
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Journal Title
  
  Proc.International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] High fT and fmax of double δ-doped GaInSb channel HEMTs2024
- Author(s)
  R. Kouno, R. Yoshida, R. Ebihara, T. Jinnai, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structure2024
- Author(s)
  T. Jinnai, T. Oba, W. Nakajima, R. Ebihara, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] LT-InSbを用いたGaAs基板上InAsxSb1-x薄膜成長と評価2023
- Author(s)
  三田泰継、小関敬祐、桑原笑明、小野田悠人、遠藤聡、藤代博記
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04158
[Presentation] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] InSb/Ga0.22In0.78Sb 複合チャネルHEMT構造の電気的特性2023
- Author(s)
  神内智揮，羽鳥小春，海老原怜央，尾曽雅宗，河野亮介，遠藤聡，藤代博記
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] ダブルTe ドープGaInSb HEMT構造の電気的特性2023
- Author(s)
  尾曽雅宗、羽鳥小春、海老原怜央、神内智揮、河野亮介、遠藤聡、藤代博記
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2022 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Ｘ線回折極点図測定を用いたGaInSb HEMT構造中の双晶評価2022
- Author(s)
  海老原怜央、國澤宗真、羽鳥小春、吉田陸人、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT構造の電気的特性への熱処理の影響2022
- Author(s)
  吉田陸人、國澤宗真、羽鳥小春、海老原怜央、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 歪超格子バッファを用いたGaInSb HEMTの電気的特性と膜厚の評価2021
- Author(s)
  國澤宗真、林　拓也、平岡瑞穂、大金剛毅、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  岸本尚之、礒前雄人、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会「ミリ波・テラヘルツ波デバイス・システム」
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2020
- Author(s)
  林　拓也、平岡瑞穂、大金剛毅、國澤宗真、岸本尚之、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSbチャネルHEMT構造のゲート・チャネル間距離パラメータが電気的特性に与える影響2019
- Author(s)
  岸本尚之, 遠藤勇輝, 林拓也, 平岡瑞穂, 町田龍人, 遠藤聡, 藤代博記
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Improved Electron Transport Properties of Ga1-xInxSb Quantum Well Channel Using Strained-Al0.40In0.60Sb/Al1-yInySb Stepped Buffer2019
- Author(s)
  M. Hiraoka, Y. Endoh, K. Osawa, N. Kishimoto, T. Hayashi, R. Machida, A. Endoh, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMTs2019
- Author(s)
  N. Kishimoto, Y. Endoh, T. Hayashi, M. Hiraoka, R. Machida, A. Endoh, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer2018
- Author(s)
  K. Osawa, M. Hiraoka, T. Kishi, Y. Endoh, J. Takeuchi, R. Machida and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発2018
- Author(s)
  渡邊一世,山下良美,遠藤聡,原紳介,笠松章史, 吉田智洋,井上和孝,中田健,眞壁勇夫,磯野恭佑,岡直希,原田義彬,竹内淳,町田龍人,藤代博記
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering2018
- Author(s)
  T. Suzuki, Y. Fujisawa, S. Kawamura, K. Kumasaka, R. Machida, and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] LT-AlSb成長がInSb HEMT構造の電気的特性に与える影響2017
- Author(s)
  遠藤勇輝, 原田義彬, 竹内淳, 岩木拓也, 町田龍人, 藤代博記
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMTs fabricated by using two-step-recessed gate procedure2017
- Author(s)
  N. Oka, K. Isono, Y. Harada, J. Takeuchi, T. Iwaki, Y. Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, R. Machida, A. Kasamatsu and H. I. Fujishiro
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure2017
- Author(s)
  S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Organizer
  電子デバイス研究会-ミリ波・テラヘルツ波デバイス・システム-
- Invited
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering2017
- Author(s)
  Y. Fujisawa, T. Takahashi, S. Kawamura, S. Fujikawa, and H.I. Fujishiro
- Organizer
  Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron transport properties of novel InSb/GaInSb composite channel high electron mobility transistor structures2016
- Author(s)
  J. Takeuchi, S. Fujikawa, Y. Harada and H. I. Fujishiro
- Organizer
  35rd Electronic Materials Symposium (EMS35)
- Place of Presentation
  Laforet Biwako, Shiga
- Year and Date
  2016-07-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film2016
- Author(s)
  K. Isono, D. Tsuji, T. Taketsuru, S. Fujikawa, I. Watanabe Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  International Conference on Indium Phosphide and Related Materials (IPRM) 2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron Transport Properties of InSb/GaInSb Composite Channel2016
- Author(s)
  S. Fujikawa, J. Takeuchi, Y. Harada, and H. I. Fujishiro
- Organizer
  19th International Conference on Molecular Beam Epitaxy (MBE2016),
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction2016
- Author(s)
  S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  19th International Conference on Molecular Beam Epitaxy (MBE2016)
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications2016
- Author(s)
  I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako,H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami,T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara,D. Tsuji, K. Isono, S. Fujikawa, and H. I. Fujishiro
- Organizer
  2016 IEEE Compound Semiconductor IC Symposium
- Place of Presentation
  Doubletree by Hilton, Austin, TX, USA
- Year and Date
  2016-10-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Comparative Study on Noise Characteristics of As and Sb-based HEMTs2016
- Author(s)
  Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, Hiroki I. Fujishiro
- Organizer
  International Conference on Indium Phosphide and Related Materials (IPRM) 2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb HEMT with over 300 GHz-fT using stepped buffer layer for strain reduction2016
- Author(s)
  S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  35rd Electronic Materials Symposium (EMS35)
- Place of Presentation
  Laforet Biwako, Shiga
- Year and Date
  2016-07-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Al2O3/GaSb MOS 界面構造における絶縁膜堆積前処理の検討2014
- Author(s)
  後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] 各種チャネル材料を用いたIII-V DG MOSFETの遅延時間解析2014
- Author(s)
  矢島悠貴, 大濱諒子, 西田明央, 藤川紗千恵, 藤代博記
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates2013
- Author(s)
  Takahiro Goto, Sachie Fujikawa, Hiroki Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda
- Organizer
  44th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, VA, USA
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] 各種チャネル材料を用いたIII-V DG MOSFETの特性解析2013
- Author(s)
  大濱諒子, 西田明央, 藤川紗千恵, 藤代博記
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe,and A. Kasamatsu
- Organizer
  25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-23
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] GaSbショットキー接合型メタルS/D pMOSFETsの動作実証2013
- Author(s)
  後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Organizer
  40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-20
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 真空アニール法がAl2O3/GaSb MOS界面に与える影響2013
- Author(s)
  後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
- Organizer
  電子情報通信学会 ED研
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] InGaAs DG-MOSFETの駆動電流に及ぼすソース/ドレイン拡張領域の影響の解析2012
- Author(s)
  西田明央,長谷川慶,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  富山大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMT のデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純,荒井敦志,町田史晴,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪み InSb HEMT の遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  電子情報通信学会 ED 研究会
- Place of Presentation
  福井大学
- Year and Date
  2012-07-26
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Analysis of Electron Transport in Nano-Scale III-V MOSFETs2012
- Author(s)
  H. I. Fujishiro
- Organizer
  BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology (Nano-S&T 2012)
- Place of Presentation
  Qingdao, China.
- Year and Date
  2012-10-26
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Analysis of Electron Transport in Nano-Scale III-V MOSFETs2012
- Author(s)
  Hiroki I. Fujishiro
- Organizer
  BIT's 2st Annual World Congress of Nanoscience and Nanotechnology (Nano-S&T 2012)
- Place of Presentation
  Qingdao Kempinski Hotel, China
- Invited
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Organizer
  24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
- Place of Presentation
  University of California Santa Barbara, USA.
- Year and Date
  2012-08-27
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMTのデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純, 荒井敦志, 町田史晴, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] III-V DG-MOSFET の駆動電流に及ぼすソース/ドレイン形状の影響に関する理論的解析2012
- Author(s)
  長谷川慶,西田明央,原紳介,藤代博記
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu.
- Year and Date
  2011-08-28
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学
- Year and Date
  2011-07-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶,本間嵩広,原紳介,藤代博記
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学.
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Germany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of Nano-Scale III-V MOSFETs2011
- Author(s)
  H. I. Fujishiro
- Organizer
  BIT's 1st Annual World Congress of Nano-S&T(Nano-S&T 2011)
- Place of Presentation
  Dalian, China.
- Year and Date
  2011-10-23
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学マルチメディアシステムセンター
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純, 町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大学(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,西野啓之,原紳介,藤代博記
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of Nano-Scale III-V MOSFETs2011
- Author(s)
  Hiroki Fujishiro
- Organizer
  BIT's 1st Annual World Congress of Nano-S&T
- Place of Presentation
  World EXPO Center, Dalian, China
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs witn Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Geriany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純,町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J Sato, H.I.Fujishiro, H.Endo, Y.Yamashita, I.Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu, Japan
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato. H. Watanabe, S. Haraand H. I. Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Berlin, Germany.
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶, 本間嵩広, 原紳介, 藤代博記
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  Shanghai, China.
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の理論的解析2010
- Author(s)
  渡邉久巨,本間嵩広,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  大阪府立大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法によるInGaAs MOSFETの電子輸送解析2010
- Author(s)
  藤代博記
- Organizer
  電気学会調査専門委員会「グリーンITにおける化合物半導体電子デバイス」研究会
- Place of Presentation
  法政大学マイクロ・ナノテクノロジーセンタ
- Year and Date
  2010-11-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法によるInGaAs MOSFETの電子輸送解析2010
- Author(s)
  藤代博記
- Organizer
  電気学会調査専門委員会「グリーンITにおける化合物半導体電子デバイス」研究会
- Place of Presentation
  法政大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学.
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  InterContinental Hotel, Shanghai, China
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学院大学
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  北陸先端科学技術大学院大学.
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.Watanabe, T.Homma, T.Takegishi, Y.Hirasawa, Y.Hirata, S.Hara, H.I.Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Takamatsu Symbol Tower, Kagawa, Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] GaSb表面の純窒化プロセスの検討
- Author(s)
  後藤高寛、藤川紗千恵、藤代博記、小倉睦郎、安田哲二、前田辰郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学　湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] 窒素プラズマ処理を施したAl2O3/GaSb MOS構造の特性評価
- Author(s)
  後藤高寛、藤川紗千恵、藤代博記、小倉睦郎、安田哲二、前田辰郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Analysis of delay times in III-V MOSFETs with various channel materials
- Author(s)
  R.Ohama, Y.Yajima, A.Nishida, S.Fujikawa and H.I.Fujishiro
- Organizer
  41th International Symposium on Compound Semiconductors (ISCS 2014)
- Place of Presentation
  Montpellier (France)
- Year and Date
  2014-05-11 – 2014-05-15
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Comparison of delay times in III-V MOSFETs with various channel materials
- Author(s)
  Y. Yajima, R. Ohama, S. Fujikawa and H. I. Fujishiro
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺（静岡県伊豆市）
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-24246058

1. ENDOH Akira (60417110)

# of Collaborated Projects: 3 results

# of Collaborated Products: 37 results
2. 町田龍人 (50806560)

# of Collaborated Projects: 2 results

# of Collaborated Products: 42 results
3. HARA Shinsuke (30434038)

# of Collaborated Projects: 1 results

# of Collaborated Products: 55 results
4. YASUDA Tetsuji (90220152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
5. MAEDA Tatsuro (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
6. MIYATA Noriyuki (40358130)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. OHTAKE Akihiro (30267398)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NARA Jun (30354145)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. ICHIKAWA Masakazu (20343147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. TANAKA Masatoshi (90130400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 藤川紗千恵 (90550327)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
12. 渡邊一世 (20450687)

# of Collaborated Projects: 1 results

# of Collaborated Products: 31 results

Fujishiro Hiroki 藤代 博記

FUJISHIRO Hiroki 藤代 博記

Research Projects

Research Products

Co-Researchers

テラヘルツデバイスへ向けた歪みInAsSb量子ナノ構造の作製とその物性に関する研究

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Research Institution

Study on the growth of InAsSb channel quantum well structures for terahertz transistors

Principal Investigator

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Review Section

Research Institution

Development of Ultra-high Performance InGaSb Channel THz TransistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of Ultra-High Performance Sb-Based Teraherts TransistorsPrincipal Investigator

Principal Investigator

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Research Institution

Valence-band engineering and interface-dipole control for realizing III-V pMOSFET

Principal Investigator

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Research Field

Research Institution

Quantum Corrected Simulation of III-V MOSFETsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024

Author(s)

Journal Title

Data Source

[Journal Article] Bowing of Energy Gap Curve for InAsSb Calculated Using VASP Based on Hybrid Density Functional Theory2024

Author(s)

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Data Source

[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024

Author(s)

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Data Source

[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024

Author(s)

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[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024

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[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023

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[Journal Article] ダブルTe ドープGaInSb HEMT構造の電気的特性2023

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[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023

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[Journal Article] InSb/Ga0.22In0.78Sb 複合チャネルHEMT構造の電気的特性2023

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[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023

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Fujishiro Hiroki 藤代博記

FUJISHIRO Hiroki 藤代博記