Jitsuo Ohta 太田実雄

… Alternative Names

OHTA Jitsuo 太田実雄

太田実雄オオタジツオ

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Researcher Number	60392924
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2014 – 2015: 東京大学, 生産技術研究所, 助教 2010: 東京大学, 生産技術研究所, 助教 2007: 東京大学, 生産技術研究所, 助教 2005 – 2006: 東京大学, 生産技術研究所, 助手
Review Section/Research Field	Principal Investigator Device related chemistry / Applied materials science/Crystal engineering Except Principal Investigator Science and Engineering
Keywords	Principal Investigator スパッタ / Si / MEMS / GaN / Sic / InGaN / 低温 / SiC / PLD Except Principal Investigator 高速電子素子 … More / 赤外発光素子 / 窒化インジウム / 低温成長 / パルス励起堆積法 / III族窒化物 Less

Integration of Si-based MEMS and GaN-based light emitting devices on Si(111) by low-temperature growth techniquePrincipal Investigator
- Principal Investigator
  
  Jitsuo Ohta
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Device related chemistry
- Research Institution
  The University of Tokyo
Low temperature growth of InN films by pulsed excitation deposition
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
SiC基板上への高品質InGaN混晶の低温エピタキシャル成長Principal Investigator
- Principal Investigator
  
  太田実雄
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo

All 2015 2011 2010 2009 2008 2007 2006 2005

All Journal Article Presentation

[Journal Article] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates2011
- Author(s)
  K.Ueno, J.Ohta, H.Fujioka, H.Fukuyama
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10027782707
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Fabrication of densely packed array of GaN nanostructures on nano-imprinted substrates.2011
- Author(s)
  F.Shih, A.Kobayashi, S.inoue, J.Ohta, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 319 Pages: 102-105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Coherent growth of r-plane GaN films on ZnO substrates at room temperature2011
- Author(s)
  A.Kobayashi, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Band Offsets of Polar and Nonpolar GaN/ZnO Heterostructures Determined by Synchrotron Radiation Photoemission Spectroscopy2010
- Author(s)
  J.W.Liu, A.Kobayashi, S.Toyoda, H.Kamada, A.Kikuchi, J.Ohta, H.Fujioka.
- Journal Title
  
  Physica Status Solidi B
  
  Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 80204-80204
- NAID
  40017253748
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition2010
- Author(s)
  T.Fujii, A.Kobayashi, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 21003-21003
- NAID
  10027013296
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvement in the crystalline quality of semipolar AlN (1_102) films using ZnO substrates with self-organized nanostripes2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 4 Pages: 188-190
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014931
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Phys.Status Solidi (RRL) 4
  
  Pages: 188-188
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural and optical properties of nonpolar AlN (11_20) films grown on ZnO (11_20) substrates with a room-temperature GaN buffer layer2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvements in optical properties of semipolar r-plane GaN films grown using atomically flat ZnO substrates and room temperature epitaxial buffer layers2010
- Author(s)
  A.Kobayashi, S.Kawano, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017341189
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 80202-80202
- NAID
  40017253746
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural properties of semipolar AlxGa1-xN (1_103) films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 2149-2152
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates2010
- Author(s)
  S.Inoue, M.Katoh, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume: 4 Pages: 88-90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-temperature epitaxial growth of high quality m-plane InAlN films on nearly lattice-matched ZnO substrates2010
- Author(s)
  T.Kajima, A.Kobayashi, K.Ueno, K.Shimomoto, T.Fujii, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017216057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 61001-61001
- NAID
  10027014931
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth orientation control of semipolar InN films using yttria-stabilized zirconia substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253748
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-plane InN films grown on ZnO substrates at room temperature by pulsed laser deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253746
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural characteristics of semipolar InN (11 21) films grown on yttria stabilized zirconia substrates2010
- Author(s)
  T.Fujii, A.Kobayashi, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 2269-2271
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth of group III nitride films by pulsed electron beam deposition2009
- Author(s)
  J.Ohta
- Journal Title
  
  Journal of Solid State Chemistry 182
  
  Pages: 1241-1244
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Fabrication and Characterization of AlN/InN Heterostructures2009
- Author(s)
  T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
- Journal Title
  
  Appl Phys.Exp. 2
  
  Pages: 11002-11002
- NAID
  10025083913
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition2009
- Author(s)
  R.Ohba, J.Ohta, K.Shimomoto, T.Fujii, K.Okamoto, A.Aoyama, T.Nakano, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  J.Solid State Chemistry 182
  
  Pages: 2887-2887
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition2009
- Author(s)
  K. Sato, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
- Journal Title
  
  Appl. Phys. Exp. 2
  
  Pages: 11003-11003
- NAID
  10025083938
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth of group III nitride films by pulsed electron beam deposition2009
- Author(s)
  J. Ohta
- Journal Title
  
  J. Solid State Chemistry (in press)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low-temperature growth of high quality AlN films on carbon face 6H-SiC2008
- Author(s)
  M.-H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi - Rapid Research Letters 2
  
  Pages: 13-13
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth of InN films on spinel substrates by pulsed laser deposition2007
- Author(s)
  K. Mitamura, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
  
  physica status solidi (rapid research letters) 5
  
  Pages: 211-211
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka
- Journal Title
  
  Appl. Phys. Lett. 90
  
  Pages: 41908-41908
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature2007
- Author(s)
  M.H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 151903-151903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low temperature epitaxial growth of InN films2006
- Author(s)
  J.Ohta
- Journal Title
  
  Solid State Communications 137
  
  Pages: 208-208
- Data Source
  KAKENHI-PROJECT-17760005
[Journal Article] III族窒化物室温成長バッファー層の評価2005
- Author(s)
  太田実雄
- Journal Title
  
  日本結晶成長学会誌 32
  
  Pages: 82-82
- Data Source
  KAKENHI-PROJECT-17760005
[Presentation] GaN薄膜成長におけるHfNバッファ層の検討2015
- Author(s)
  篠塚正之, 太田実雄, 綿引康介, 金惠蓮, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26870108
[Presentation] 伝導性バッファー層を用いたSi基板上へのGaN薄膜成長2015
- Author(s)
  篠塚正之, 綿引康介, 太田実雄, 金惠蓮, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第45回結晶成長国内会議
- Place of Presentation
  北海道大学
- Year and Date
  2015-10-19
- Data Source
  KAKENHI-PROJECT-26870108
[Presentation] マイカ基板を用いたIII族窒化物LEDの作製2011
- Author(s)
  野村周平, 田村和也, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 原子散乱表面分光法による半極性面AlN/ZnOの極性判定2011
- Author(s)
  小林篤, 上野耕平, 太田実雄, 藤岡洋, 尾嶋正治, 中西繁光, 東堤秀明
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 無極性面・半極性面ZnO基板上InGaNの偏光スイッチング2011
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への全組成域m面InAlN薄膜のエピタキシャル成長2011
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] グラファイトシート上GaN青色LEDの作製2011
- Author(s)
  金子俊郎, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Al2O3/InN界面の電子状態評価2011
- Author(s)
  大久保佳奈, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化サファイア基板上に成長したAlN薄膜の微細構造観察2011
- Author(s)
  上野耕平, 太田実雄, 藤岡洋, 福山博之
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法により成長したGaN薄膜の電気特性2011
- Author(s)
  丹所昂平, 井上茂, 太田実雄, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010
- Author(s)
  Hiroshi Fujioka, Tomoaki Fujii, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima
- Organizer
  ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  South Bend, U.S.A
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への無極性面・半極性面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 高In濃度InGaNを用いた太陽電池の試作2010
- Author(s)
  井上茂, 太田実雄, 加藤雅樹, 田村和也, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 放射光光電子分光による極性面・無極性面GaN/ZnOヘテロ界面の解析2010
- Author(s)
  劉江偉, 小林篤, 豊田智史, 菊池亮, 太田実雄, 藤岡洋, 組頭広志, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルススパッタ法による太陽電池用InGaN薄膜の作製2010
- Author(s)
  加藤雅樹, 田村和也, 井上茂, 太田実雄, 藤岡洋
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN薄膜の偏光特性評価2010
- Author(s)
  上野耕平, 小林篤, 太田実雄, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] BNTCA-BPTAポリマー焼結グラファイトシート上へのGaN薄膜成長2010
- Author(s)
  金子俊郎, 太田実雄, 藤岡洋, 山下順也, 羽鳥浩章, 児玉昌也, 平崎哲郎, 植仁志
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への高In組成m面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Improvement in crystalline quality of semipolar AlN (1-102) films by using ZnO substrates with self-organized nanostripes2010
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶、小林篤、太田実雄、尾嶋正治、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN/AlNヘテロ構造の作製と光学特性評価2010
- Author(s)
  上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] YSZ基板上に成長したInNの極性制御と成長モード2010
- Author(s)
  小林篤, 大久保佳奈, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の構造特牲及び偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Rh(111)基板上への窒化物成長初期過程の解析2010
- Author(s)
  岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 半極性面AlV/InNヘテロ構造の作製と評価2010
- Author(s)
  小林篤, 藤井智明, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room-temperature growth of high quality AlN films on SiC substrates by pulsed sputtering deposition2009
- Author(s)
  太田実雄
- Organizer
  28thElectronic Materials Symposium
- Place of Presentation
  Moriyama, Shiga Japan
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PXD法による窒化物半導体の低温エピタキシャル成長2009
- Author(s)
  太田実雄
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of JUN on atomically flat 6H-and 4H-SiC substrates2008
- Author(s)
  J. Ohta
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of cubic InN with high phase purity by pulsed laser deposition2008
- Author(s)
  A. Kobayashi, R. Ohba, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  2nd International symposium on growth of nitrides
- Place of Presentation
  Shuzenji, Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of high quality AIN films on SiC substrates at room temperature2008
- Author(s)
  J. Ohta
- Organizer
  ISGN
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of GaN films on b-Ga2O3 substrates2007
- Author(s)
  J. Ohta
- Organizer
  26th Electronic Materials Symposium
- Place of Presentation
  Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of GaN on b-Ga2O3(100) Substrates2007
- Author(s)
  J. Ohta
- Organizer
  7th International conference on nitride semiconductors
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka, S. Inoue, T. Nakano, and J. Ohta
- Organizer
  15th International conference on crystal growth
- Place of Presentation
  Salt lake city, USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルス励起堆積(PXD)法によるIII族窒化物の室温エピタキシャル成長2007
- Author(s)
  太田実雄
- Organizer
  第37回結晶成長国内会議
- Place of Presentation
  北海道
- Data Source
  KAKENHI-PLANNED-18069003

1. FUJIOKA Hiroshi (50282570)

# of Collaborated Projects: 1 results

# of Collaborated Products: 54 results

Jitsuo Ohta 太田 実雄

OHTA Jitsuo 太田 実雄

太田 実雄 オオタ ジツオ

Research Projects

Research Products

Co-Researchers

Integration of Si-based MEMS and GaN-based light emitting devices on Si(111) by low-temperature growth techniquePrincipal Investigator

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Low temperature growth of InN films by pulsed excitation deposition

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SiC基板上への高品質InGaN混晶の低温エピタキシャル成長Principal Investigator

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[Journal Article] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates2011

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NAID

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[Journal Article] Fabrication of densely packed array of GaN nanostructures on nano-imprinted substrates.2011

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[Journal Article] Coherent growth of r-plane GaN films on ZnO substrates at room temperature2011

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[Journal Article] Band Offsets of Polar and Nonpolar GaN/ZnO Heterostructures Determined by Synchrotron Radiation Photoemission Spectroscopy2010

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[Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates2010

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NAID

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[Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition2010

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NAID

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[Journal Article] Improvement in the crystalline quality of semipolar AlN (1_102) films using ZnO substrates with self-organized nanostripes2010

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[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010

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[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010

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NAID

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[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010

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[Journal Article] Structural and optical properties of nonpolar AlN (11_20) films grown on ZnO (11_20) substrates with a room-temperature GaN buffer layer2010

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[Journal Article] Improvements in optical properties of semipolar r-plane GaN films grown using atomically flat ZnO substrates and room temperature epitaxial buffer layers2010

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NAID

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[Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition2010

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Jitsuo Ohta 太田実雄

OHTA Jitsuo 太田実雄

太田実雄オオタジツオ