Yamaguchi Atsushi 山口敦史

… Alternative Names

山口敦史ヤマグチアツシ

YAMAGUCHI Atsushi 山口敦史

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Researcher Number	60449428
Other IDs
Affiliation (Current)	2025: 金沢工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2023: 金沢工業大学, 工学部, 教授 2011 – 2020: 金沢工業大学, 工学部, 教授 2009 – 2010: Kanazawa Institute of Technology, ものづくり研究所, 教授
Review Section/Research Field	Principal Investigator Science and Engineering / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / Science and Engineering Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator 窒化物半導体 / 光物性 / 価電子帯 / 内部量子効率 / 光音響 / GaN / 半導体レーザ / 偏光特性 / 物性物理 / デバイスシミュレーション … More / ワイドキャップ半導体 / キャリア拡散 / シミュレータ / 混晶 / キャリアダイナミクス / 組成揺らぎ / InGaN量子井戸 / 量子井戸 / 物性実験 / 半導体物性 / 理論モデル / ポテンシャル揺らぎ / 電子状態 / 光学測定 / へき開共振器ミラー / 光学利得 / AlGaN / InGaN / 緑色レーザ / 深紫外LED … More Except Principal Investigator ミストＣＶＤ / LED / ミストCVD / 酸化亜鉛 / 発光ダイオード / ミスト化学気相成長法 / 酸化物半導体 / 長寿命化 / 電子顕微鏡 / 転位 / 格子欠陥 / 結晶成長 / 劣化 / 信頼性 / 量子ドット / 発光デバイス Less

ワイドギャップ半導体デバイスシミュレーションのための物性物理モデル構築Principal Investigator
- Principal Investigator
  
  山口敦史
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanazawa Institute of Technology
輻射・非輻射再結合の同時観測とそれに基づく特異構造の電子状態の理論モデル構築Principal Investigator
- Principal Investigator
  
  山口敦史
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kanazawa Institute of Technology
輻射・非輻射再結合の同時観測とそれに基づく特異構造の電子状態の理論モデル構築Principal Investigator
- Principal Investigator
  
  山口敦史
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kanazawa Institute of Technology
Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method
- Principal Investigator
  
  Nakamura Yusui
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kumamoto University
Research on non-C-oriented green laser diodes with cleaved facet cavity mirrorsPrincipal Investigator
- Principal Investigator
  
  YAMAGUCHI Atsushi A.
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa Institute of Technology
Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
- Principal Investigator
  
  UEDA Osamu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kanazawa Institute of Technology
窒化物半導体の電子状態・光学特性の理論解析とデバイス構造提案Principal Investigator
- Principal Investigator
  
  山口敦史
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kanazawa Institute of Technology

All 2024 2023 2021 2020 2019 2018 2017 2015 2014 2013 2012 2011 2010 2009

All Journal Article Presentation Patent

[Journal Article] Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method2024
- Author(s)
  Mori-Tamamura Keito、Takahashi Yuchi、Sakai Shigeta、Morimoto Yuya、Hirama Junji、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Science and Technology of Advanced Materials: Methods
  
  Volume: 4 Issue: 1 Pages: 2315027-2315027
- DOI
  10.1080/27660400.2024.2315027
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements by utilizing Helmholtz resonance2024
- Author(s)
  Tosa Hiroki、Mori-Tamamura Keito、Yamaguchi Atsushi A.
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP81-02SP81
- DOI
  10.35848/1347-4065/ad1d83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] ストライプコアGaN基板上InGaN量子井戸における顕微PA・PL同時ラインスキャン測定2023
- Author(s)
  神野翔綺・森　恵人・山口敦史・草薙　進・蟹谷裕也・富谷茂隆・工藤喜弘
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 123 Pages: 52-55
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] 一軸性応力印加によるInGaN量子井戸の偏光制御と変形ポテンシャルの決定2023
- Author(s)
  森　恵人・山口敦史・牧野智大・大原真穂・濱口達史・幸田倫太郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 123 Pages: 56-59
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] ヘルムホルツ共鳴利用と光音響セル内空気加圧によるInGaN量子井戸の光音響・発光同時計測のS/N比改善2023
- Author(s)
  土佐宏樹・森　恵人・山口敦史
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 123 Pages: 48-51
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red2023
- Author(s)
  Mori-Tamamura Keito、Morimoto Yuya、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 10 Pages: 105501-105501
- DOI
  10.35848/1347-4065/acf79f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage2023
- Author(s)
  Mori-Tamamura Keito、Morimoto Yuya、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 01SP19-01SP19
- DOI
  10.35848/1347-4065/acfb18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers2020
- Author(s)
  Fujita Takashi、Sakai Shigeta、Ikeda Yuma、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 9 Pages: 091003-091003
- DOI
  10.35848/1347-4065/abaebc
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Journal Article] A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy2018
- Author(s)
  Atsushi A. YAMAGUCHI, Kohei KAWAKAMI, Naoto SHIMIZU, Yuchi TAKAHASHI, Genki KOBAYASHI, Takashi NAKANO, Shigeta SAKAI, Yuya KANITANI, and Shigetaka TOMIYA
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E101.C Issue: 7 Pages: 527-531
- DOI
  10.1587/transele.E101.C.527
- NAID
  130007386834
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2018-07-01
- Language
  English
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Journal Article] Theoretical Analysis of Optical Polar-ization Properties in Semipolar and Nonpolar InGaN Quantum Wells for Precise Determination of Valence-Band Parameters in InGaN Alloy Material2015
- Author(s)
  Shigeta Sakai, Atsushi A. Yamaguchi
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 252 Issue: 5 Pages: 885-889
- DOI
  10.1002/pssb.201451594
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560385
[Journal Article] 非極性InGaN量子井戸の偏光特性2014
- Author(s)
  坂井繁太、山口敦史、栗原香、長尾哲
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 23-26
- Data Source
  KAKENHI-PROJECT-24560385
[Journal Article] 窒化物半導体LEDの偏光特性2011
- Author(s)
  山口敦史
- Journal Title
  
  月刊ディスプレイ
  
  Volume: 17-5 Pages: 43-49
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells2011
- Author(s)
  A.A.Yamaguchi, K.Kojima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98 Pages: 101905-101905
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] A simple theoretical approach to analyze polarization properties insemipolar and nonpolar InGaN quantum wells2011
- Author(s)
  Atsushi A. Yamaguchi and K. Kojima
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560012
[Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : Definite breakdown of the quasi-cubic approximation2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami, A.A.Yamaguchi
- Journal Title
  
  Physical Review B 81
  
  Pages: 155202-155202
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] 非極性InGaN量子井戸における偏光特性の既報告実験データの統一的解釈2010
- Author(s)
  山口敦史、小島一信
- Journal Title
  
  信学技報
  
  Volume: 110-271 Pages: 29-32
- NAID
  110008152398
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010
- Author(s)
  K.Kojima, A.A.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49 Pages: 81001-81001
- NAID
  40017253764
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] Theoretical Investigation of Polarization Properties in Al-rich AlGaN Quantum Wells with Various Substrate Orientations2010
- Author(s)
  A.Atsushi Yamaguchi
- Journal Title
  
  Applied Physics Letters 96
  
  Pages: 151911-151911
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016006
[Journal Article] Polarization Properties in Deep-Ultraviolet AlGaN Quantum Wells with Various Substrate Orientations2010
- Author(s)
  A.Atsushi Yamaguchi
- Journal Title
  
  Physica Status Solidi(b) (未定(採択済))
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016006
[Patent] 半導体発光素子2009
- Inventor(s)
  山口敦史
- Industrial Property Rights Holder
  金沢工業大学
- Industrial Property Number
  2009-201593
- Filing Date
  2009-09-01
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on a stripe-core GaN Substrate2024
- Author(s)
  Shoki Jinno, Keito Mori-Tamamura, Atushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya
- Organizer
  SPIE Photonics West 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] 時間分解PL測定によるInGaN量子井戸におけるキャリア拡散の測定2024
- Author(s)
  伊藤央祐, 森恵人, 山口敦史, 伊藤まいこ, 幸田倫太郎, 濱口達史
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application2024
- Author(s)
  Keito Mori-Tamamura, Atsushi A. Yamaguchi, Maho Ohara, Tomohiro Makino, Tatsushi Hamaguchi, Rintaro Koda
- Organizer
  SPIE Photonics West 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] ストライプコアGaN基板上InGaN量子井戸における顕微PA・PL同時ラインスキャン測定2023
- Author(s)
  神野翔綺・森　恵人・山口敦史・草薙　進・蟹谷裕也・富谷茂隆・工藤喜弘
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] p型GaNのドナー・アクセプターペア発光の時間減衰曲線の理論解析2023
- Author(s)
  渡邊龍一、鷹合圭祐、大森雅登、山口敦史
- Organizer
  応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] Evaluation of radiative and non-radiative recombination lifetimes in c-plane InGaN quantum wells with different In composition2023
- Author(s)
  Keito Mori-Tamamura1, Yuya Morimoto1, Atsushi A. Yamaguchi1, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] データ駆動によるInGaN量子井戸の発光減衰曲線の特徴抽出2023
- Author(s)
  山肥田涼、山口敦史
- Organizer
  応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] 一軸性応力印加によるInGaN量子井戸の偏光制御と変形ポテンシャルの決定2023
- Author(s)
  森　恵人・山口敦史・牧野智大・大原真穂・濱口達史・幸田倫太郎
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] ヘルムホルツ共鳴利用と光音響セル内空気加圧によるInGaN量子井戸の光音響・発光同時計測のS/N比改善2023
- Author(s)
  土佐宏樹・森　恵人・山口敦史
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] Optical Recombination Processes in Nitride Semiconductors2023
- Author(s)
  Atsushi A. Yamaguchi, K. Mori-Tamamura
- Organizer
  第84回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] Theoretical modeling of electronic structures in III-nitride materials with singular structures based on photo-acoustic and photoluminescence simultaneous measurements2021
- Author(s)
  A. A. Yamaguchi1, K. Mori, T. Fujita, S. Kusanagi, Y. Kanitani, Y. Kudo, and S. Tomiya
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), online (2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] InGaN量子井戸の発光温度消光の励起波長依存性2020
- Author(s)
  山口拓海 , 有賀恭介 , 森恵人 , 山口敦史
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）, online, (2020)
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] 光音響・発光同時計測法と積分球法によるInGaN 量子井戸の内部・外部量子効率推定2020
- Author(s)
  森恵人，高橋祐知，坂井繁太，森本悠也，山口敦史，草薙進，蟹谷裕也，工藤喜弘，冨谷茂隆
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] 光音響・発光同時計測法と積分球法によるInGaN量子井戸の内部・外部量子効率推定2020
- Author(s)
  森恵人、高橋佑知、坂井繁太、森本悠也、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂隆
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] Experimental Studies and Model Analysis on Potential Fluctuation n InGaN Quantum-Well Layers2019
- Author(s)
  T. Fujita, S. Sakai, Y. Ikeda, A. A. Yamaguchi, Y. Kanitani, and S. Tomiya
- Organizer
  2019 International Conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] 光音響・発光同時計測法による内部量子効率測定2019
- Author(s)
  山口敦史
- Organizer
  応用物理学会結晶工学分科会主催第２４回結晶工学セミナー「ワイドギャップ半導体結晶の評価とプロセス技術－評価／プロセスからマテリアルの本質に迫る－」
- Invited
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] Measurements of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Spectroscopy2019
- Author(s)
  K. Mori, Y. Takahashi, A. A. Yamaguchi, S. Kusanagi, Y. Kanitani, Y. Kudo and S. Tomiya
- Organizer
  The 38th Electronic Materials Symposium (EMS-38), Kashihara, Japan (2019)
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] Measurements of IQE in Various InGaN SQWs with Different Qualities by Simultaneous Photoacoustic and Photoluminescence2019
- Author(s)
  K. Mori, Y. Takahashi, A. A. Yamaguchi, Y. Kanitani, Y. Kudo, S. Tomiya
- Organizer
  The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] 光音響・発光同時計測によるInGaN量子井戸の内部量子効率の推定2019
- Author(s)
  森恵人，高橋佑知，森本悠也，山口敦史, 草薙進，蟹谷裕也，工藤喜弘，冨谷茂隆
- Organizer
  応用物理学会結晶工学分科会・電子材料若手交流会(ISYSE) 共催第2回結晶工学×ISYSE合同研究会、東京
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] 音響・発光同時計測によるInGaN量子井戸の内部量子効率の推定2019
- Author(s)
  森恵人、高橋佑知、森本悠也、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂隆
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）, 浜松
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] Experimental Studies and Model Analysis on Potential Fluctuation in InGaN Quantum-Well Layers2019
- Author(s)
  T. Fujita, S. Sakai, Y. Ikeda, A. A. Yamaguchi, S. Kusanagi, Y. Kanitani, Y. Kudo and S. Tomiya
- Organizer
  The 38th Electronic Materials Symposium (EMS-38), Kashihara, Japan (2019)
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] InGaN量子井戸における Mobility edgeの見積り方法に関する実験的・理論的検討2019
- Author(s)
  藤田貴志、坂井繁太、池田優真、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂隆
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）, 浜松
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] InGaN量子井戸のMobility edgeの見積り方法に関する実験的・理論的検討2019
- Author(s)
  藤田貴志、坂井繁太、池田優真、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂隆
- Organizer
  応用物理学会結晶工学分科会・電子材料若手交流会(ISYSE) 共催第2回結晶工学×ISYSE合同研究会、東京
- Data Source
  KAKENHI-PUBLICLY-19H04553
[Presentation] InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of InGaN underlayer2018
- Author(s)
  S. Kusanagi, Y. Kanitani, Y. Kudo, K. Tasai, H. Narui, A. A. Yamaguchi, and S. Tomiya
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Layers2018
- Author(s)
  T. Fujita, S. Sakai, Y. Ikeda, A. A. Yamaguchi, Y. Kanitani, and S. Tomiya
- Organizer
  26th International Semiconductor Laser Conference (ISLC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Estimation of internal quantum efficiency in III-nitride materials using simultaneous photo-acoustic and photoluminescence measurements2018
- Author(s)
  Atsushi A. Yamaguchi, N. Shimizu, S. Sakai, T. Nakano, H. Fukada, Y. Kanitani, and S. Tomiya
- Organizer
  SPIE Photonics West 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] A New Method to Evaluate the Degree of Potential Fluctuation in InGaN Quantum-Well Laser Diodes by Optical-Pump Stimulated-Emission Measurements2018
- Author(s)
  I. Oshima, Y. Ikeda, S. Sakai, A. A. Yamaguchi, Y. Kanitani, and S. Tomiya
- Organizer
  26th International Semiconductor Laser Conference (ISLC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Determination of Deformation Potentials in InGaN Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes2018
- Author(s)
  Shigeta Sakai, Kazunobu Kojima, Shigefusa F. Chichib and Atsushi A. Yamaguchi
- Organizer
  26th International Semiconductor Laser Conference (ISLC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] 光音響・発光同時計測によるInGaN量子井戸の内部量子効率の測定2017
- Author(s)
  清水奈緒人,　高橋佑知, 小林玄季,　中納隆,　坂井繁太, 山口敦史, 蟹谷裕也,　冨谷茂隆
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Carrier Dynamics Studies of III-Nitride Materials Using Simultaneous Photo-Acoustic and Photoluminescence Measurements2017
- Author(s)
  A. A.Yamaguchi, N. Shimizu, S. Sakai, T. Nakano, H. Fukada, Y. Kanitani, and S. Tomiya
- Organizer
  The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] 発光・光音響同時計測による窒化物半導体の内部量子効率測定2017
- Author(s)
  山口敦史、清水奈緒人、高橋佑知、小林玄季、中納隆、坂井繁太、蟹谷裕也、冨谷茂隆
- Organizer
  応用物理学会第13 回励起ナノプロセス研究会
- Invited
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] InGaN量子井戸における発光ピークのS字型温度依存性の詳細解析2017
- Author(s)
  池田優真, 坂井繁太, 大島一輝, 山口敦史, 蟹谷裕也, 冨谷茂隆
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Electronic structures and optical properties of AlGaN materials and their quantum-well systems2017
- Author(s)
  Atsushi A. Yamaguchi
- Organizer
  International Workshop on UV Materials and Devices 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Quantum-Wire-Like Density of States in c-plane AlGaN Quantum Wells in Polarization-Crossover Composition Region2017
- Author(s)
  S. Sakai, T. Minami, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi
- Organizer
  the 12th international conference on nitride semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] InGaN発光ダイオードの光励起時のI-V特性/発光特性のモデル解析2017
- Author(s)
  太田　有亮、　坂井　繁太、　山口　敦史
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements2017
- Author(s)
  A. A.Yamaguchi, N. Shimizu, S. Sakai, T. Nakano, H. Fukada, Y. Kanitani, and S. Tomiya
- Organizer
  the 12th international conference on nitride semiconductors (ICNS-12)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05341
[Presentation] Optical Polarization Properties in Nonpolar InGaN Quantum Wells2015
- Author(s)
  Atsushi A. Yamaguchi, Shigeta Sakai, Kaori Kurihara, and Satoru Nagao
- Organizer
  Energy Materials Nanothechnology East Meeting 2015
- Place of Presentation
  Beijing, China
- Year and Date
  2015-04-22
- Invited
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Effects of Alloy Compositional Fluctu-ation on Optical Polarization Properties in Nonpolar InGaN Quantum Wells2014
- Author(s)
  Shigeta Sakai, Atsushi A. Yamaguchi, Kaori Kurihara, and Satoru Nagao
- Organizer
  the 10th International Symposium on Semi-conductor Light Emitting Devices
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-18
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Theoretical Study of Optical Gain Characteristics in InGaN Pure-Green Laser Diodes on Semipolar GaN Substrates2014
- Author(s)
  Atsushi A. Yamaguchi, Shigeta Sakai
- Organizer
  Energy Material Nan-otechnology Open Ac-cess Week Meeting
- Place of Presentation
  Chengdu, China
- Year and Date
  2014-09-23
- Invited
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] 非極性InGaN量子井戸の偏光特性2014
- Author(s)
  坂井繁太、山口敦史、栗原香、長尾哲
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Place of Presentation
  大阪大学
- Year and Date
  2014-11-27
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Theoretical Prediction of Optical Gain Characteristics in InGaN Green Laser Diodes Fabricated on Low-Angle Semipolar GaN Substrates2014
- Author(s)
  Atsushi A. Yamaguchi and Shigeta Sakai
- Organizer
  2014 Asia-Pacific Workshop on Funda-mentals and Applica-tions of Advanced Semiconductor Devic-es
- Place of Presentation
  Kanazawa, Japan
- Year and Date
  2014-07-01
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] In組成の空間的ゆらぎが非極性InGaN量子井戸の偏光特性へ及ぼす影響2014
- Author(s)
  坂井繁太, 山口敦史, 栗原香, 長尾哲
- Organizer
  2014年秋季　第75 回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Theoretical Prediction of Optical Gain Characteristics in InGaN Green Laser Diodes Fabricated on Low-Angle Semipolar GaN Substrates2014
- Author(s)
  Atsushi A. Yamaguchi and Shigeta Sakai
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Kanazawa, Japan
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Theoretical Studies on Anisotropic Op-tical Gain Characteristics in Semipo-lar-Oriented InGaN Quantum-Well Laser Diodes2013
- Author(s)
  Shigeta Sakai and Atsushi A. Yamaguchi
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductor 2013
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Theoretical Studies on Anisotropic Optical Gain Characteristics in Semipolar-Oriented InGaN Quantum-Well Laser Diodes2013
- Author(s)
  Shigeta Sakai and Atsushi A. Yamaguchi
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductor 2013
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] Optical polarization and anisotropic gain characteristics in semipolar and nonpolar InGaN quantum well lasers2012
- Author(s)
  Atsushi A. Yamaguchi
- Organizer
  Photonics Global Conference 2012
- Place of Presentation
  Singapore
- Invited
- Data Source
  KAKENHI-PROJECT-24560385
[Presentation] 非極性面窒化物半導体の光学特性に関する理論的検討2011
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学(福岡県春日市)(招待講演予定)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] A new simple theoretical approach to analyze optical polarization properties in semipolar and nonpolar InGaN quantum wells2011
- Author(s)
  A.A.Yamaguchi, K.Kojima
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  鳥羽国際ホテル(三重県鳥羽市)(招待講演予定)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells2010
- Author(s)
  A.A.Yamaguchi, K.Kojima
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(米国)
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 窒化物半導体のバンド構造の歪み依存性の理論的研究2010
- Author(s)
  海老原康裕, 白石賢二, 山口敦史
- Organizer
  2010年春期第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Breakdown of the quasicubic approximation in GaN and InN-A Theoretical Approach-2010
- Author(s)
  Y.Ebihara, K.Shiraishi, A.A.Yamaguchi
- Organizer
  The 29th Electronic Material Symposium (EMS・29)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 非極性InGaN量子井戸における偏光特性の既報告実験データの統一的解釈2010
- Author(s)
  山口敦史、小島一信
- Organizer
  応用物理学会(2010年秋季)
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 無極性AlGaN/AlN量子井戸の光学特性に関する理論検討2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  応用物理学会(2010年秋季)
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Impact of Nonpolar Plane for Deep Ultraviolet Laser Diodes Based on AlGaN/AlN Quantum Wells2010
- Author(s)
  K.Kojima, A.A.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Organizer
  The 22nd IEEE International Semiconductor Laser Conference (ISLC 2010)
- Place of Presentation
  ANAホテル(京都市)
- Year and Date
  2010-09-26
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 非極性面InGaN量子井戸における不均一広がりと偏光の関係2010
- Author(s)
  小島一信、山口敦史、船戸充、川上養一、野田進
- Organizer
  2010年春期第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 非極性InGaN量子井戸における偏光特性の既報告実験データの統一的解釈2010
- Author(s)
  山口敦史、小島一信
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学(大阪市)
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Influence of inhomogeneous broadening for gain polarization switching in green semipolar InGaN quantum wells2010
- Author(s)
  K.Kojima, A.A.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(米国)
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Intrinsic Origin of the Breakdown of Quasi-Cubic Approximation in Nitride Semiconductors2010
- Author(s)
  Y.Ebihara, K.Shiraishi, A.A.Yamaguchi
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(米国)
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 非極性InGaN量子井戸における偏光特性の既報告実験データの統一的解釈2010
- Author(s)
  山口敦史、小島一信
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  東北大学(仙台市)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Theoretical Studies on Deformation Potentials of Strained Nitride Semiconductor Films2010
- Author(s)
  Y.Ebihara, K.Shiraishi, A.A.Yamaguchi
- Organizer
  4th AEARU Advanced Materials Science Workshop on Artificial and Self-Organized Nanostructure Sciences and Nano-Technologies for the Sustainable World
- Place of Presentation
  筑波大学(つくば市)
- Year and Date
  2010-08-29
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 擬立方晶近似の妥当性についての理論的考察2010
- Author(s)
  海老原康裕、白石賢二、山口敦史
- Organizer
  応用物理学会(2010年秋季)
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 非極性InGaN量子井戸における偏光特性(擬立方晶近似が成立しない場合)2010
- Author(s)
  山口敦史、小島一信
- Organizer
  2010年春期第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Theoretical Investigation on Polarization Control of Deep-Ultraviolet AlGaN Quantum-Well Emission2009
- Author(s)
  山口敦史
- Organizer
  2009 Asian Core Workshop on Wide Band Gap Semiconductors
- Place of Presentation
  大観荘松島(宮城県)
- Year and Date
  2009-09-04
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Polarization Properties in Deep-Ultraviolet AlGaN Quantum Wells with Various Substrate Orientations2009
- Author(s)
  山口敦史
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] Theoretical Investigation on Polarization Control of Deep-Ultraviolet AlGaN Quantum-Well Emission2009
- Author(s)
  山口敦史
- Organizer
  2009 MRS fall meeting
- Place of Presentation
  ボストン(米国)
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PUBLICLY-21016006
[Presentation] 深紫外AlN/AlGaN量子井戸の偏光特性の理論解析2009
- Author(s)
  山口敦史
- Organizer
  2009年秋期第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PUBLICLY-21016006

1. UEDA Osamu (50418076)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. SAKUMA Yoshiki (60354346)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. GONOKAMI Makoto (70161809)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YOSHIMOTO Masahiro (20210776)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. IKENAGA Noriaki (30512371)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. Nakamura Yusui (00381004)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NAGAOKA Shoji (10227994)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TSUCHIYA Masahiro (50183869)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 小島一信 (30534250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 14 results
11. 境健太郎 (20336291)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 浪平隆男 (40315289)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 冨谷茂隆 (40867016)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results

Yamaguchi Atsushi 山口 敦史

山口 敦史 ヤマグチ アツシ

YAMAGUCHI Atsushi 山口 敦史

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ワイドギャップ半導体デバイスシミュレーションのための物性物理モデル構築Principal Investigator

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輻射・非輻射再結合の同時観測とそれに基づく特異構造の電子状態の理論モデル構築Principal Investigator

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輻射・非輻射再結合の同時観測とそれに基づく特異構造の電子状態の理論モデル構築Principal Investigator

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Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method

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Research on non-C-oriented green laser diodes with cleaved facet cavity mirrorsPrincipal Investigator

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Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices

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窒化物半導体の電子状態・光学特性の理論解析とデバイス構造提案Principal Investigator

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[Journal Article] Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method2024

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[Journal Article] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements by utilizing Helmholtz resonance2024

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[Journal Article] ストライプコアGaN基板上InGaN量子井戸における顕微PA・PL同時ラインスキャン測定2023

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[Journal Article] 一軸性応力印加によるInGaN量子井戸の偏光制御と変形ポテンシャルの決定2023

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[Journal Article] ヘルムホルツ共鳴利用と光音響セル内空気加圧によるInGaN量子井戸の光音響・発光同時計測のS/N比改善2023

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[Journal Article] Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red2023

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[Journal Article] Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage2023

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Yamaguchi Atsushi 山口敦史

山口敦史ヤマグチアツシ

YAMAGUCHI Atsushi 山口敦史