Fujii Takashi 藤井高志

… Alternative Names

藤井高志フジイタカシ

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Researcher Number	60571685
Affiliation (Current)	2026: 立命館大学, 総合科学技術研究機構, 教授
Affiliation (based on the past Project Information) *help	2024: 立命館大学, 総合科学技術研究機構, 上席研究員 2021 – 2023: 立命館大学, 総合科学技術研究機構, 教授
Review Section/Research Field	Except Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
Keywords	Except Principal Investigator 窒化物半導体 / 原子層材料 / グラフェン / モアレ超格子 / 電子顕微鏡 / ScAlMgO4 / ステップ / 貫通転位 / 透過電子顕微鏡 / 格子不整合 … More / 分子線エピタキシー / 結晶成長 / 酸化物半導体 / リモートエピタキシー / ファンデルワールスエピタキシー / ツイストグラフェン / フォノン / MoS2 / 遷移金属ダイカルコゲナイド / 原子層半導体 / 熱伝導 / フォノン物性 Less

Study on three-dimensional lattice-matched epitaxy in nitride semiconductor crystal growth
- Principal Investigator
  
  荒木努
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Ritsumeikan University
Elucidation and control of phonon properties in moire superlattices
- Principal Investigator
  
  MOURI SHINICHIRO
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
- Research Institution
  Ritsumeikan University
Study of van der Waals epitaxy using moire super lattice
- Principal Investigator
  
  MOHRI SHINICHIRO
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Ritsumeikan University

All 2025 2024 2023 2022 2021

All Journal Article Presentation

[Journal Article] Noncontact and nondestructive measurements of electrical properties for Mg ion-implanted layers on GaN single crystals using THz time-domain spectroscopic ellipsometry2025
- Author(s)
  Wang Dingding、Fujii Takashi、Deura Momoko、Iwamoto Toshiyuki、Sugie Ryuichi、Suyama Atsushi、Kawanowa Hitoshi、Araki Tsutomu
- Journal Title
  
  MRS Advances
  
  Volume: 10 Issue: 4 Pages: 450-456
- DOI
  10.1557/s43580-025-01208-9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01366
[Journal Article] Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy2024
- Author(s)
  Kubo Yuta、Deura Momoko、Yamada Yasuhiro、Fujii Takashi、Araki Tsutomu
- Journal Title
  
  physica status solidi (b)
  
  Volume: 261 Issue: 11
- DOI
  10.1002/pssb.202400014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01366
[Journal Article] Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model2024
- Author(s)
  Watanabe Hayato、Wang Dingding、Fujii Takashi、Iwamoto Toshiyuki、Fukuda Tsuguo、Deura Momoko、Araki Tsutomu
- Journal Title
  
  physica status solidi (b)
  
  Volume: 261 Issue: 11
- DOI
  10.1002/pssb.202400017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01366
[Journal Article] Frontiers of nitride semiconductor crystal growth using molecular beam epitaxy2023
- Author(s)
  荒木努, 出浦桃子, 藤井高志, 毛利真一郎
- Journal Title
  
  Oyo Buturi
  
  Volume: 92 Issue: 10 Pages: 622-626
- DOI
  10.11470/oubutsu.92.10_622
- ISSN
  0369-8009, 2188-2290
- Year and Date
  2023-10-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K18913
[Journal Article] Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio-Frequency Molecular Beam Epitaxy2023
- Author(s)
  Yuichi Wada, Momoko Deura, Yuya Kuroda, Naoki Goto, Seiya Kayamoto, Takashi Fujii, Shinichiro Mouri, Tsutomu Araki
- Journal Title
  
  Physica status solidi B
  
  Volume: 260 Issue: 7 Pages: 202300029-202300029
- DOI
  10.1002/pssb.202300029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K18913, KAKENHI-PROJECT-21H01831
[Presentation] THz-TDSEによるAlGaN/GaN-HEMTの非接触・非破壊電気特性測定の検討2025
- Author(s)
  藤井高志、山田大進、岩本俊志、荒木努
- Organizer
  2025年春季第72回応用物理学学会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] THz-TDSEによるMgイオン注入したGaN単結晶の電気特性評価(V)2025
- Author(s)
  藤井高志、王丁丁、岩本俊志、須山篤志、荒木努
- Organizer
  2025年春季第72回応用物理学学会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] RF-MBE Growth of GaN on Step-free Cleaved ScAlMgO4 Substrates2024
- Author(s)
  T. Araki, Y. Yamada, N. Hagiwara, T. Kusayama, M. Deura, T. Fujii
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] Evaluation of Electrical Properties of Mg Ion-implanted GaN Layer using THz-TDSE2024
- Author(s)
  D. Wang, T. Fujii, M. Deura, T. Iwamoto, A. Suyama, and T. Araki
- Organizer
  第 43 回電子材料シンポジウム(EMS-43)
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] 劈開 ScAlMgO4 基板上 GaN の RF-MBE 成長における初期過程解析2024
- Author(s)
  萩原宣顕, 山田泰弘, 草山大生, 出浦桃子, 藤井高志, 荒木努
- Organizer
  2024年秋季第85回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] Noncontact and Nondestructive Measurements of Electrical Properties for Mg Ion-implanted Layers on GaN Single Crystals using THz Time-domain Spectroscopic Ellipsometry2024
- Author(s)
  D. Wang, T. Fujii, M. Deura, T. Iwamoto, A. Suyama, H. Kawanowa and T. Araki
- Organizer
  24th International Conference on Ion Implantation Technology 2024 (24th IIT 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] Growth time dependence of InGaN on ScAlMgO4 substrates using RF-MBE2024
- Author(s)
  Y. Kubo, Y. Zhong, M. Deura, T. Fujii, and T.. Araki
- Organizer
  第 43 回電子材料シンポジウム(EMS-43)
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] ScAlMgO4基板上へのRF-MBE法によるAlN成長2024
- Author(s)
  荒木努，藤井高志，星生伸一，福田承生
- Organizer
  第53回結晶成長国内会議（JCCG-53）
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] ScAlMgO4 基板上 InGaN の RF-MBE 成長における初期過程解析2024
- Author(s)
  久保祐太, 鐘元澤, 出浦桃子, 藤井高志, 荒木努
- Organizer
  2024年秋季第85回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] THz-TDSE による Mg イオン注入した GaN 単結晶の電気特性評価(IV)2024
- Author(s)
  王丁丁, 藤井高志, 出浦桃子, 岩本敏志, 須山篤志, 荒木努
- Organizer
  2024年秋季第85回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] THz 波を用いた ScAlMgO4 基板上 GaN 薄膜の屈折率異方性の評価2024
- Author(s)
  土田海渡, 藤井高志, 岩本敏志, 出浦桃子, 荒木努
- Organizer
  2024年秋季第85回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-24K01366
[Presentation] THz-TDSEを用いたr面サファイア基板上グラフェンの電気的特性評価2022
- Author(s)
  鈴木拓輝, 渡邉迅登, 藤井高志, 毛利真一郎, 岩本敏志, 福西康寛, 成塚重弥, 荒木努
- Organizer
  2022年春季第69回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21K18913
[Presentation] THz-TDSEを用いたr面サファイア基板上グラフェンの電気的特性評価2022
- Author(s)
  鈴木拓輝, 渡邉迅登, 藤井高志, 毛利真一郎, 岩本敏志, 福西康寛, 成塚重弥, 荒木努
- Organizer
  2022年春季第69回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21H01017
[Presentation] THz-TDSエリプソメトリを用いたグラフェンの電気的特性評価2021
- Author(s)
  鈴木拓輝, 藤井高志, 毛利真一郎, 岩本敏志, 上田悠貴, 成塚重弥, 中嶋誠, 荒木努
- Organizer
  2021年秋季第82回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21H01017
[Presentation] THz-TDSエリプソメトリを用いたグラフェンの電気的特性評価2021
- Author(s)
  鈴木拓輝, 藤井高志, 毛利真一郎, 岩本敏志, 上田悠貴, 成塚重弥, 中嶋誠, 荒木努
- Organizer
  2021年秋季第82回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21K18913
[Presentation] 透過電子顕微鏡を用いたScAlMgO4基板上RF-MBE 成長GaN の極微構造評価2021
- Author(s)
  和田邑一, 黒田悠弥, 栢本聖也, 後藤直樹, 藤井高志, 毛利真一郎, 白石裕児, 福田承生, 荒木努
- Organizer
  日本材料学会 2021年度第2回半導体エレクトロニクス部門委員会第1回研究会
- Data Source
  KAKENHI-PROJECT-21H01017

1. 荒木努 (20312126)

# of Collaborated Projects: 3 results

# of Collaborated Products: 20 results
2. MOURI SHINICHIRO (60516037)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
3. 佐々木拓生 (90586190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 出浦桃子 (90609299)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results

Fujii Takashi 藤井 高志

藤井 高志 フジイ タカシ

Research Projects

Research Products

Co-Researchers

Study on three-dimensional lattice-matched epitaxy in nitride semiconductor crystal growth

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Elucidation and control of phonon properties in moire superlattices

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of van der Waals epitaxy using moire super lattice

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Noncontact and nondestructive measurements of electrical properties for Mg ion-implanted layers on GaN single crystals using THz time-domain spectroscopic ellipsometry2025

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Frontiers of nitride semiconductor crystal growth using molecular beam epitaxy2023

Author(s)

Journal Title

DOI

ISSN

Year and Date

Language

Data Source

[Journal Article] Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio-Frequency Molecular Beam Epitaxy2023

Author(s)

Journal Title

DOI

Data Source

[Presentation] THz-TDSEによるAlGaN/GaN-HEMTの非接触・非破壊電気特性測定の検討2025

Author(s)

Organizer

Data Source

[Presentation] THz-TDSEによるMgイオン注入したGaN単結晶の電気特性評価(V)2025

Author(s)

Organizer

Data Source

[Presentation] RF-MBE Growth of GaN on Step-free Cleaved ScAlMgO4 Substrates2024

Author(s)

Organizer

Data Source

[Presentation] Evaluation of Electrical Properties of Mg Ion-implanted GaN Layer using THz-TDSE2024

Author(s)

Organizer

Data Source

[Presentation] 劈開 ScAlMgO4 基板上 GaN の RF-MBE 成長における初期過程解析2024

Author(s)

Organizer

Data Source

[Presentation] Noncontact and Nondestructive Measurements of Electrical Properties for Mg Ion-implanted Layers on GaN Single Crystals using THz Time-domain Spectroscopic Ellipsometry2024

Author(s)

Organizer

Data Source

[Presentation] Growth time dependence of InGaN on ScAlMgO4 substrates using RF-MBE2024

Author(s)

Organizer

Data Source

[Presentation] ScAlMgO4基板上へのRF-MBE法によるAlN成長2024

Fujii Takashi 藤井高志

藤井高志フジイタカシ