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ARAKI Tsutomu  荒木 努

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Researcher Number 20312126
Other IDs
External Links
Affiliation (Current) 2022: 立命館大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help 2015 – 2022: 立命館大学, 理工学部, 教授
2012 – 2014: 立命館大学, 理工学部, 准教授
2012: 立命館大学, 理工学, 准教授
2010: 立命館大学, 理工学, 准教授
2006 – 2009: 立命館大学, 理工学部, 准教授
2002 – 2006: 立命館大学, 理工学部, 講師
Review Section/Research Field
Principal Investigator
Crystal engineering / Basic Section 30010:Crystal engineering-related
Except Principal Investigator
Science and Engineering / Electron device/Electronic equipment / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Crystal engineering / Electronic materials/Electric materials / Applied optics/Quantum optical engineering / Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related / Medium-sized Section 30:Applied physics and engineering and related fields
Keywords
Principal Investigator
窒化インジウム / 分子線エピタキシー / 結晶成長 / 窒化物半導体 / 転位 / プラズマ / 熱電変換 / 透過電子顕微鏡 / MBE成長 / p型 … More / MBE / ゼーベック係数 / エピタキシャル成長 / 電子顕微鏡 / エピタキシャル / 格子欠陥 / 窒素プラズマ / 半導体 … More
Except Principal Investigator
窒化物半導体 / InN / RF-MBE / InGaN / 窒化インジウム / 窒化アルミニウム / 結晶成長 / MBE / AlGaN / ナノ構造 / 分子線エピタキシー法 / p型ドーピング / 窒化インジウムガリウム / Si基板 / ガドリニウム / 希土類 / スパッタ法 / 紫外発光 / ワイドギャップ半導体 / 内殻遷移 / DERI法 / p形ドーピング / 光デバイス / バンドギャップ / 分子線エピタキシー / オーミックコンタクト / MIS構造 / ヘテロ構造 / 極性 / オーミック電極 / 混晶組成 / 極微領域評価 / 転位 / リーク電流 / HFET / InAlN / 貫通転位 / ヘテロ接合 / ＡｌＧａＮ / モアレ超格子 / グラフェン / 結晶薄膜 / サーモパワー / Seebeck係数 / 分子線エビタキシー法 / その場観察 / RHEED / ラジカルビーム / 光反射率 / 多重量子井戸 / ナノコラム / 無極性 / 半導体物性 / 紫外 / 赤外 / 発光デバイス / エピタキシャル成長 / ヘテロ界面 / インターミキシング / 窒素ラジカル / キャリア濃度 / 結晶性 / MBE成長法 / スパッタ製膜法 / DERI / ドライエッチング / ウェットエッチング / KOH / ショットキー電極 / ケルビン力顕微鏡 / X線光電子分光法 / 深紫外発光素子 / MIPE / 大面積発光素子 / 高出力発光素子 / LED / マイクロプラズマ / プラズマ励起 / 深紫外光源 / 大面積 / 波長可変 / 紫外線殺菌 / 紫外線分解 / 不活性化 / 量子井戸 / 臨界膜厚 / 量子井戸構造 / バンドギャツプ / AlNバッファ / モンテカルロシミュレーション / 最大ドリフト速度 / 窒化 / 低温中間層 / GaN / 二次元電子ガス / Full Band Monte Carlo Simulation / bandqap / heterostructure / quantum well / crystal growth / 量子カスケードレーザ / 窒素化合物半導体 / 環境 / 生命科 / 生命科学 / Quantum Cascade Laser / Nitride Semiconductor / Optical Device / Environment / Life Science / グラフィン / 非混和性 / 非混和 / 極微構造 / 結晶欠陥 / 深紫外 / センサー / ダイオード / トランジスタ / 格子欠陥 / デバイス / エピタキシャル / 先端機能デバイス / 保護膜 / 縦型パワーFET / AlGaN縦型 / 導電性AlNバッファーレイヤー / レーザによるｐ型化 / 縦型AlGaNショットキーデバイス / 自然形成ビアホール / レーザーによるオーミックコンタクト形成 / Si基板上縦型デバイス / 縦型ＦＥＴ / 導電性ＡｌＮバッファー層 / 縦型電子デバイス / Ｓｉ基板 / ＡｌＮバッファ / ＭＯＣＶＤ / レーザー / ｐ－化 / Si基板上FET / Si基板上エピ反り低減法 / Si基板上縦型FET / ビアホール / パワーFET / 縦型FET / 高温アニール / AlN / 深紫外LED / 高速トランジスタ / 原子間力顕微鏡 / 選択成長 / MOVPE / 光誘起加工 / DUV-LED / 界面制御 / 選択横方向成長 / 熱処理 / MOVPE法 / アニール / Face-to-Face / ヘテロ成長 / フェムト秒レーザー / ファセット / フォノン / ツイストグラフェン / MoS2 / 原子層材料 / フォノン物性 / 熱伝導 / ファンデルワールスエピタキシー / リモートエピタキシー Less

  • Research Projects

    (18 results)

  • Research Products

    (658 results)

  • Co-Researchers

    (42 People)

  •  Elucidation and control of phonon properties in moire superlattices

    • Principal Investigator
      毛利 真一郎
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
    • Research Institution
      Ritsumeikan University

  •  高圧高温熱処理による高品質インジウム系窒化物半導体の創製と熱電素子応用Principal Investigator

    • Principal Investigator
      荒木 努
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Ritsumeikan University

  •  Study of van der Waals epitaxy using moire super lattice

    • Principal Investigator
      毛利 真一郎
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Ritsumeikan University

  •  Development of InN semiconductors for application of thermoelectric conversion devicesPrincipal Investigator

    • Principal Investigator
      Araki Tsutomu
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Ritsumeikan University

  •  Development of vertical AlGaN high power FET on Si substrate using spontaneous via holes

    • Principal Investigator
      黒瀬 範子
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Ritsumeikan University

  •  Creation of singularity structure by top-down method based on thermal equiburium condition

    • Principal Investigator
      Hideto Miyake
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Mie University

  •  Aomic scale structure control of InN and InGaN by immiscible nature in order to form a base for device applications

    • Principal Investigator
      Nanishi Yasushi
    • Project Period (FY)
      2015 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Ritsumeikan University

  •  Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substrate

    • Principal Investigator
      IWATA NAOTAKA
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Toyota Technological Institute

  •  Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method

    • Principal Investigator
      NANISHI YASUSHI
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Ritsumeikan University

  •  Dynamic micro-plasma excited AlGaN high power DUV light emitter operated at around 10W class power

    • Principal Investigator
      Aoyagi Yoshinobu
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Ritsumeikan University

  •  Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Ritsumeikan University

  •  Fabrication of a novel ultra-violet light-emitting device using gadolinium-doped aluminum nitride

    • Principal Investigator
      SUZUKI Akira
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University

  •  RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Ritsumeikan University

  •  Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2006 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Ritsumeikan University

  •  Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Ritsumeikan University

  •  新規紫外光発光材料ガドリニウム添加窒化アルミニウムの作製

    • Principal Investigator
      SUZUKI Akira
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University

  •  Room-Temperature Continuous-Wave Operation of Quantum Cascade Lasers Using Nitride Semiconductor with a High In Composition

    • Principal Investigator
      KASAHARA Kenichi
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Ritsumeikan University

  •  Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2001 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Ritsumeikan University

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 Other

All Journal Article Presentation Book Patent

  • [Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009
    • Author(s)
      Y. Nanishi, T. Araki and T. Yamaguchi
    • Publisher
      Indium Nitride and Related Alloys
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys2009
    • Author(s)
      Y. Nanishi, T. Araki and T. Yamaguchi (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Book] Chapter : 1-Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors : T.D.Veal, C.F.McConville, and W.J.Schaff)2009
    • Author(s)
      Y.Nanishi, T.Araki, T.Yamaguchi
    • Total Pages
      50
    • Publisher
      CRC
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Book] "Indium Nitride and Related Alloys" Chapter I Molecular-Beam Epitaxy of InN(edited by T.D.Veal, C.F.McConville, and W.J.Schaff)2009
    • Author(s)
      Y.Nanishi, T.Araki, T.Yamaguchi
    • Publisher
      CRC
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)2009
    • Author(s)
      Y. Nanishi, T. Arakiand T. Yamaguchi
    • Publisher
      CRC
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation2021
    • Author(s)
      T. Araki, F. Abas, R. Fujita and S. Mouri
    • Journal Title

      J. Soc. Mat. Sci., Japan

      Volume: 70 Issue: 10 Pages: 732-737

    • DOI

      10.2472/jsms.70.732

    • NAID

      130008105967

    • ISSN
      0514-5163, 1880-7488
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Journal Article] Enhancement of InN Luminescence by Introduction of Graphene Interlayer2019
    • Author(s)
      Darius Dobrovolskas, Shingo Arakawa, Shinichiro Mouri, Tsutomu Araki, Yasushi Nanishi, Juras Mickevicius and Gintautas Tamulaitis
    • Journal Title

      nanomaterials

      Volume: 3 Pages: 417-417

    • DOI

      10.3390/nano9030417

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-INTERNATIONAL-15K21727, KAKENHI-ORGANIZER-15H05866, KAKENHI-PUBLICLY-18H04294, KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-16H03860

  • [Journal Article] Surface and bulk electronic structures of unintentionally and Mg-dopedIn0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy2018
    • Author(s)
      M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Pages: 095701-1

    • DOI

      10.1063/1.5016574

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330

  • [Journal Article] Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki, and Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 3 Pages: 035502-035502

    • DOI

      10.7567/jjap.57.035502

    • NAID

      210000148718

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-16H03860

  • [Journal Article] Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Journal Title

      MRS Advances

      Volume: 3 Pages: 931-936

    • DOI

      10.1557/adv.2018.218

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H03860, KAKENHI-PROJECT-15H03559

  • [Journal Article] Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy2017
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      Journal of Applied Physics

      Volume: 121 Pages: 095703-095703

    • DOI

      10.1063/1.4977201

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419

  • [Journal Article] Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry2017
    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Journal Title

      physica status solidi (b)

      Volume: 254 Pages: 1600767-1600767

    • DOI

      10.1002/pssb.201600767

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-17K05086

  • [Journal Article] Influence of Defects and Indium Distribution on Emission Properties of Thick In-Rich InGaN Layers Grown by the DERI Technique2017
    • Author(s)
      D. Dobrovolskas, J. Mickevicius, S. Nargelas, A. Vaitkevicius, Y. Nanishi, T. Araki, G. Tamulaitis
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32

    • DOI

      10.1088/1361-6641/32/2/025012

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090

  • [Journal Article] Microstructure and Thermal Stability of Rf-Plasma-Nitridated α-(AlGa)2O3 Grown by Mist CVD2017
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Journal Title

      phys. stat. sol. (b)

      Volume: 254

    • DOI

      10.1002/pssb.201600768

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Journal Article] InN NanoColumns Grown by Molecular Beam Epitaxy and Their Luminescence Properties2015
    • Author(s)
      K. Wang, T. Araki, T. Yamaguchi, Y.T. Chen, E. Yoon, Y. Nanishi
    • Journal Title

      Journal of Crystal Growth

      Volume: 430 Pages: 93-97

    • DOI

      10.1016/j.jcrysgro.2015.07.027

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-15H03559

  • [Journal Article] Optical properties of Ga<sub>0.82</sub>In<sub>0.18</sub>N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy2015
    • Author(s)
      T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya and T. Honda
    • Journal Title

      Trans. Mat. Res. Soc. Japan

      Volume: 40 Issue: 2 Pages: 149-152

    • DOI

      10.14723/tmrsj.40.149

    • NAID

      130005089534

    • ISSN
      1382-3469, 2188-1650
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-15H03559

  • [Journal Article] Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates2014
    • Author(s)
      T. Araki, S. Uchimura, J. Sakaguchi, Y. Nanishi, T. Fujishima, A. Hsu, K. Kim, T. Palacios,
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 7 Pages: 071001-071001

    • DOI

      10.7567/apex.7.071001

    • NAID

      210000137149

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Journal Article] Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)2014
    • Author(s)
      N. Kurose, K. Shibano, T. Araki, Y. Aoyagi
    • Journal Title

      AIP advances

      Volume: 4 Pages: 02712211-6

    • DOI

      10.1063/1.4867090

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249053

  • [Journal Article] Effect of Mg Doping on the Structural and Free-Charge Carrier Properties of InN Thin Films2014
    • Author(s)
      M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi and V. Darakchieva
    • Journal Title

      J. Appl. Phys

      Volume: 115 Pages: 163504-163504

    • DOI

      10.1063/1.4871975

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-26600090

  • [Journal Article] P-type InGaN across the entire alloy composition range2013
    • Author(s)
      K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz and Y. Nanishi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102巻

    • DOI

      10.1063/1.4795718

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth2013
    • Author(s)
      T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
    • Journal Title

      Proceedings of SPIE "Gallium Nitride Materials and Devices VIII

      Volume: 8625巻 Pages: 862502-862502

    • DOI

      10.1117/12.2007258

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE2012
    • Author(s)
      T. Araki, S. Yamashita, T. Yamaguchi, E. Yoon, and Y. Nanishi
    • Journal Title

      physica status solidi (a)

      Volume: 209巻 Pages: 447-450

    • DOI

      10.1002/pssa.201100520

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy2012
    • Author(s)
      I. -S. Shin, K. Wang, T. Araki, E. Yoon, and Y. Nanishi
    • Journal Title

      Applied Physics Express

      Volume: 5

    • NAID

      10031140432

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] MBE法による配列制御InNナノコラム成長2012
    • Author(s)
      荒木努、山口智広、名西〓之
    • Journal Title

      日本結晶成長学会誌

      Volume: 38 Pages: 47-53

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys. 50巻

    • NAID

      210000138257

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
    • Author(s)
      T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50巻 Issue: 4S Pages: 04DH08-04DH08

    • DOI

      10.1143/jjap.50.04dh08

    • NAID

      210000070345

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237

  • [Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE2011
    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      physica status solidi (c)

      Volume: 8 Pages: 1499-1502

    • DOI

      10.1002/pssc.201001203

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09F09272, KAKENHI-PROJECT-21246004, KAKENHI-PROJECT-21760237

  • [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
    • Author(s)
      T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000070345

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
    • Author(s)
      K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50巻 Issue: 1S1 Pages: 01AE02-01AE02

    • DOI

      10.1143/jjap.50.01ae02

    • NAID

      210000138257

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
    • Author(s)
      T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys. 50巻

    • NAID

      210000070345

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
    • Author(s)
      T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000070345

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
    • Author(s)
      K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
    • Journal Title

      Appl. Phys. Lett

      Volume: 98巻

    • DOI

      10.1063/1.3543625

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett. 98巻

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
    • Author(s)
      T. Yamaguchi, T. Arakiand Y. Nanishi
    • Journal Title

      Proceedings of SPIE photonic West 2011

      Volume: 7939巻

    • DOI

      10.1117/12.874840

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a)

      Volume: 207 Pages: 1356-1360

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a) (印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a)

      Volume: 207 Pages: 1356-1360

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000138257

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
    • Journal Title

      phys. stat. sol. (a)

      Volume: 207巻 Pages: 1356-1360

    • DOI

      10.1002/pssa.200983657

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010)

      Pages: 92-95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a)

      Volume: 207 Pages: 1356-1360

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 92-95

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a) (印刷中(掲載決定))

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+2010
    • Author(s)
      K. Fukui, S. Sawai, T. Ito, S. Emura, T. Araki, A. Suzuki
    • Journal Title

      Physica Status Solidi (c) (掲載予定)

    • NAID

      120002851451

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360148

  • [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 92-95

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000138257

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • NAID

      210000138257

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate, phys2009
    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE, J2009
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
    • Journal Title

      Cryst. Growth 311

      Pages: 2780-2782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
    • Author(s)
      H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol. (c) 6(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE2009
    • Author(s)
      T.Yamaguchi, D.Muto, T.Araki, Y.Nanishi
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2780-2782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
    • Author(s)
      H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol. (c) 6(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE2009
    • Author(s)
      山口智広, 武藤大祐, 荒木努, 名西〓之
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2780-2782

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2009
    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol. (c) 6(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Journal Title

      Proc. of SPIE 7216 72160N

      Pages: 1-8

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] RF-MBE法によるr面(10-12)Sapphire基板上、半極性面InNの結晶成長2009
    • Author(s)
      中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
    • Journal Title

      電気学会論文誌C 電子・情報・システム部門誌 129

      Pages: 1974-1977

    • NAID

      10025533035

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3 (0001) templates, phys2009
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
    • Journal Title

      stat. sol (c)6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216 72160N

      Pages: 1-8

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article]2009
    • Author(s)
      Y.Nanishi, T.Araki, T.Yamaguchi
    • Journal Title

      "Indium Nitride and Related Alloys" Chapter 1 Molecular-Beam Epitaxy of InN( edited by T.D.Veal, C.F.McConville, and W.J.Schaff)(CRC)

      Pages: 1-50

    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] RF-MBE法によるr面(10-12)Sapphire 基板上、半極性面InNの結晶成長2009
    • Author(s)
      中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
    • Journal Title

      電気学会論文誌C電子・情報・システム部門誌 129

      Pages: 1974-1977

    • NAID

      10025533035

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3(0001) templates2009
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
    • Journal Title

      phys. stat. sol. (c) 6(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
    • Journal Title

      J. Cryst. Growth (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
    • Journal Title

      SPIE Photonics West 2009 Proceedings 7216

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE, phys2009
    • Author(s)
      H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, Y. Nanishi
    • Journal Title

      J. Cryst. Growth (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2009
    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol. (c) 6(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
    • Author(s)
      S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 5330-5332

    • NAID

      40016161747

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoiuminescence2008
    • Author(s)
      T.Akagi, K.Kosaka, S.Harui, D.Muto, H.Naoi, T.Araki, Y.Nanishi
    • Journal Title

      Journal of Electronic Materials 37

      Pages: 603-606

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
    • Author(s)
      T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 37

      Pages: 603-606

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
    • Author(s)
      T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 37

      Pages: 603-606

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
    • Author(s)
      S.Harui, H.Tamiya, T.Akagi, HMiyake, Ii.Hiramatsu, T.Arakiand, Y.Nanishi
    • Journal Title

      Jpn. J.Appl. Phys.

    • NAID

      40016161747

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns, Jpn2008
    • Author(s)
      S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
    • Journal Title

      J. Appl. Phys 47

      Pages: 5330-5332

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
    • Author(s)
      S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki, Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 5330-5332

    • NAID

      40016161747

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
    • Author(s)
      S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys 47

      Pages: 330-5332

    • NAID

      40016161747

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
    • Author(s)
      T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      J. Electronic Materials 37

      Pages: 603-606

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Microstructure of a-plane InN grown on r-plane Sapphire by ECR-MBE2007
    • Author(s)
      S.Watanabe, Y.Kumagai, A.Tsuyuguchi, H.Na, H.Naoi, T.Araki, Y.Nanishi
    • Journal Title

      physica status solidi (in press)

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J2007
    • Author(s)
      H. Na, S. Takado, S. Sawada, M. Kurouchi, T. Akagi, H. Naoi, T. Araki, and Y. Nanishi
    • Journal Title

      Cryst. Growth 300

      Pages: 177-181

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth of In-rich InAIN films on(0001) sapphire by RF-MBE and their properties2007
    • Author(s)
      H.Naoi, K.Fuiishima, S.Takado, M.Kurouchi, D.Muto, T.Araki, H.Na, and Y.Nanishi
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1313-1319

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties2007
    • Author(s)
      H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1313-1319

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
    • Author(s)
      D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, and Y.Nanishi
    • Journal Title

      Mater.Res.Soc.Symp.Proc 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
    • Author(s)
      H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
    • Journal Title

      phys. stat. sol.(b) 244

      Pages: 1834-1838

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE, phys2007
    • Author(s)
      M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)4

      Pages: 2560-2563

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
    • Author(s)
      T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
    • Journal Title

      Mater. Res. Soc. Symp. Proc. 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of A-plane(11-20) In-ritch InGaN on R-plane(10-12) Sapphire by RF-MBE2007
    • Author(s)
      M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      Phys. Stat. Sol. 4

      Pages: 2560-2563

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560040

  • [Journal Article] Mg-doped N-polar InN Grown by RF-MBE, Mater2007
    • Author(s)
      D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
    • Journal Title

      Res. Soc. Symp. Proc 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys2007
    • Author(s)
      S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      stat. sol (c)4

      Pages: 2556-2559

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
    • Author(s)
      T.Yamaguchi, T.Araki, H.Naoi, Y.Nanishi
    • Journal Title

      Material Research Society Symposium Proceedings 955

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of A-plane (11-20) In-ritch InGaN on R-plane (10-12) Sapphire by RF-MBE2007
    • Author(s)
      M.Noda, Y.Kumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, and Y.Nanishi
    • Journal Title

      Phys.Stat.Sol. 4

      Pages: 2560-2563

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560040

  • [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys2007
    • Author(s)
      H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
    • Journal Title

      stat. sol 244

      Pages: 1834-1838

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
    • Author(s)
      S.Watanabe,Y.Kumagai,A.Tsuyuguchi,H.Naoi,T.Araki,Y.Nanishi
    • Journal Title

      phvs.stat.sol.(c) 4

      Pages: 2556-2559

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN2007
    • Author(s)
      H.Na, S.Takado, S.Sawada, M.Kurouchi, T.Akagi, H.Naoi, T.Araki, Y.Nanishi
    • Journal Title

      Journal of Crystal Growth 300

      Pages: 177-181

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
    • Author(s)
      D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, Y.Nanishi
    • Journal Title

      Material Research Society Symposium Proceedings 955

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of a-plane (11-20) In-rich InGaN on r-plane (10-12) sapphire by RF-MBE2007
    • Author(s)
      M.Noda, Y.Kumagai, S.Takado, D, Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
    • Journal Title

      physica status solidi (in press)

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of In-rich InA1N films on(0001) sapphire by RF-MBE and their properties2007
    • Author(s)
      H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
    • Journal Title

      Journal of Electronic Materials 36

      Pages: 1313-1319

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] スパッタ法で作製したGd添加AIN膜の紫外発光特性2007
    • Author(s)
      廣村友紀, 小坂賢一, 宮原 学, 荒木 努, 名西〓之, 江村修一, 鈴木 彰
    • Journal Title

      第54回応用物理学関係連合講演会講演予稿集 No. 1

      Pages: 387-387

    • Data Source
      KAKENHI-PROJECT-17656110

  • [Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
    • Author(s)
      S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol.(c) 4

      Pages: 2556-2559

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
    • Author(s)
      H.Naoi, D.Muto, T.Hioka, Y.Hayakana, A.Suzuki, T.Araki, and Y.Nanishi
    • Journal Title

      phvs.stat.sol.(b) 224

      Pages: 1834-1838

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
    • Author(s)
      D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
    • Journal Title

      Mater. Res. Soc. Symp. Proc. 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res2007
    • Author(s)
      T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
    • Journal Title

      Soc. Symp. Proc 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Growth of InN nanocolumns by RF-MBE2007
    • Author(s)
      S.Nishikawa, Y.Nakao, H.Naoi, T.Araki, H.Na, Y.Nanishi
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 490-495

    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] M.Noda, Y.Kumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi2007
    • Author(s)
      M.Noda, Y.Itumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
    • Journal Title

      phvs.stat.sol.(c) 4

      Pages: 2560-2563

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi2007
    • Author(s)
      M. Nods, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
    • Journal Title

      phys. stat. sol.(c) 4

      Pages: 2560-2563

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Journal Article] Growth of InN nanocolumns by RF-MBE, J2007
    • Author(s)
      S. Nishikawa, Y. Nakao, H. Naoi, T. Araki, H. Na, and Y. Nanishi
    • Journal Title

      Cryst. Growth 301-302

      Pages: 490-495

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
    • Author(s)
      T.Yamaguchi, H.Naoi, T.Araki, and Y.Nanishi
    • Journal Title

      Mater.Res.Soc.Sump.Proc 955

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Journal Article] Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy2005
    • Author(s)
      M.Kurouchi, H.Naoi, T.Araki, T.Miyajima, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.(Express Letter) 44

    • NAID

      10014421076

    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Growth of polycrystalline InN on silica glass by ECR-MBE2005
    • Author(s)
      T.Araki, T.Ueno, H.Naoi, Y.Nanishi
    • Journal Title

      phys.stat.sol.(c) 2

      Pages: 2316-2319

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy2005
    • Author(s)
      M.Kurouchi, H.Naoi, T.Araki, T.Miyajima, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 230-232

    • NAID

      10014421076

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Correlation among Growth Conditions, Crystal Structures and Optical Properties2005
    • Author(s)
      H.Naoi, M.Kurouchi, T.Araki, T.Yamaguchi, Y.Nanishi
    • Journal Title

      phys.stat.sol.(c) 2

      Pages: 841-844

    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] The effect of substrate polarity on the growth of InN by RF-MBE2004
    • Author(s)
      H.Naoi, F.Matsuda, T.Araki, A.Suzuki, Y.Nanishi
    • Journal Title

      J.Cryst.Growth 269

      Pages: 155-161

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties2004
    • Author(s)
      T.Araki, Y.Saito, T.Yamaguchi, M.Kurouchi, Y.Nanishi, H.Naoi
    • Journal Title

      J.Vac.Sci.Tech.B 22

      Pages: 2139-2143

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RE-Molecular Beam Epitaxy2004
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki, H.Naoi 他3名
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 798

      Pages: 189-200

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and thier properties2004
    • Author(s)
      T.Araki, Y.Saito, T.Yamaguchi, M.Kurouchi, Y.Nanishi, H.Naoi
    • Journal Title

      J.Vac.Sci.Tech.B 22

      Pages: 2139-2143

    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Growth and properties of In-rich InGaN films grown on (0001) supphire by RF-MBE2004
    • Author(s)
      M.Kurouchi, T.Araki, H.Naoi, T.Yamaguchi, A.Suzuki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(b) 241

      Pages: 2843-2848

    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Recent Development of InN RF-MBE Growth and its Structural and Property Characterization2004
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, T.Araki, T.Miyajima
    • Journal Title

      phys.stat.sol.(c) 1

      Pages: 1487-1495

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki, H.Naoi, A.Suzuki, H.Harima, T.Miyajima
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 789

      Pages: 189-200

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki, H.Naoi, A.Suzuki, H.Harima, T.Miyajima
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 798

      Pages: 189-200

    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process2003
    • Author(s)
      T.Yamaguchi, K.Mizuo, Y.Saito, T.Noguchi, T.Araki, Y.Nanishi
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 743

      Pages: 163-168

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] MBE-Growth, Characterization and Properties of InN and InGaN2003
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, M.Hori, F.Matsuda, T.Araki, A.Suzuki, T.Miyajima
    • Journal Title

      phys.stat.sol.(a) 200

      Pages: 202-208

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] MBE-Growth, Characterization and Properties of InN and InGaN2003
    • Author(s)
      Y.Nanishi, Y.Saito, T.Yamaguchi, M.Hori, F.Matsuda, T.Araki 他2名
    • Journal Title

      phys.stat.sol.(a) 200

      Pages: 202-208

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Optical properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE2002
    • Author(s)
      M.Hori, K.Kano, T.Yamaguchi, Y.Saito, T.Araki, Y.Nanishi, N.Teraguchi, A.Suzuki
    • Journal Title

      phys.stat.sol.(b) 234

      Pages: 750-754

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Journal Article] Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE2002
    • Author(s)
      Y.Saito, H.Harima, E.Kurimoto, T.Yamaguchi, N.Teraguchi, A.Suzuki, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(b) 234

      Pages: 796-800

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-13450131

  • [Patent] 縦型発光ダイオードおよび結晶成長法2013
    • Inventor(s)
      青柳克信、黒瀬範子、柴野謙太朗、荒木努
    • Industrial Property Rights Holder
      学校法人立命館
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-128015
    • Filing Date
      2013-06-18
    • Data Source
      KAKENHI-PROJECT-25249053

  • [Presentation] アルコールCVD法を用いたGaN上への酸化グラフェン成長2022
    • Author(s)
      薮田翔平, 河瀬流星, 荒木 努, 毛利 真一郎
    • Organizer
      2022年春季第69回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] THz-TDSEを用いたr面サファイア基板上グラフェンの電気的特性評価2022
    • Author(s)
      鈴木 拓輝, 渡邉 迅登, 藤井 高志, 毛利 真一郎, 岩本 敏志, 福西 康寛, 成塚 重弥, 荒木 努
    • Organizer
      2022年春季第69回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] Microstructural Characterization of Nitride Semiconductor Films Grown on ScAlMgO4 Substrate by RF-MBE2022
    • Author(s)
      Y. Wada, Y. Kuroda, S. Kayamoto, N. Goto, T. Fuji, S. Mouri, Y. Shiraishi, T. Fukuda and T. Araki
    • Organizer
      14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] アルコールCVD法を用いたGaN上への酸化グラフェン成長2022
    • Author(s)
      薮田翔平, 河瀬流星, 荒木 努, 毛利 真一郎
    • Organizer
      2022年春季第69回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] Growth of Ultra-Thin GaN/AlN Superlattice Structure toward Deep-UV Emission2022
    • Author(s)
      N. Mokutani, Y. Wada, S. Mouri, K. Shojiki, S. Xiao, H. Miyake and T. Araki
    • Organizer
      14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] THz-TDSEを用いたr面サファイア基板上グラフェンの電気的特性評価2022
    • Author(s)
      鈴木 拓輝, 渡邉 迅登, 藤井 高志, 毛利 真一郎, 岩本 敏志, 福西 康寛, 成塚 重弥, 荒木 努
    • Organizer
      2022年春季第69回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] Metal Deposition on a Suspended Graphene Surface2021
    • Author(s)
      Y. Kawase, K. Matsushima, J. Doi, T. Araki, S. Mouri
    • Organizer
      The 61st Fullerenes-Nanotubes-Graphene General Symposium
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] アルコールCVD法を用いたnon-Bernal積層グラフェンの作製2021
    • Author(s)
      浅田 智浩, 薮田 翔平, 荒木 努, 毛利 真一郎
    • Organizer
      日本材料学会 2021年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] AlNテンプレート基板上にRF-MBE法で成長したInNの発光特性2021
    • Author(s)
      中山 大輝, 毛利真一郎, 福田安莉, 高林佑介, 正直花奈子, 三宅秀人, 荒木努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] Photoluminescence Properties of MBE-Regrown GaN on Free-Standing GaN Substrate2021
    • Author(s)
      D.Nakayama, R. Imamura, T. Araki, S. Mouri
    • Organizer
      40th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] RF-MBE法を用いたScAlMgO4基板上InGaNエピタキシャル成長Ⅱ2021
    • Author(s)
      後藤直樹, 栢本聖也, 黒田悠弥, 和田邑一, 藤井高志, 毛利真一郎, 白石佑児, 福田承生, 荒木努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] THz-TDSエリプソメトリを用いたグラフェンの電気的特性評価2021
    • Author(s)
      鈴木 拓輝, 藤井 高志, 毛利 真一郎, 岩本 敏志, 上田 悠貴, 成塚 重弥, 中嶋 誠, 荒木 努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] グラフェン上での InN MBE 成長における窒素プラズマ照射時間の検討2021
    • Author(s)
      松島健太、土井惇太郎、荒木努、毛利真一郎
    • Organizer
      第13回ナノ構造エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] RF-MBE法による極薄GaN/AlN超格子構造の作製2021
    • Author(s)
      杢谷 直哉, 和田 邑一, 毛利 真一郎, 正直 花奈子, 三宅 秀人, 荒木 努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] グラフェン上での InN MBE 成長における窒素プラズマ照射時間の検討2021
    • Author(s)
      松島健太、土井惇太郎、荒木努、毛利真一郎
    • Organizer
      第13回ナノ構造エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] ラマン分光を用いた架橋ツイスト2層グラフェンの熱伝導測2021
    • Author(s)
      土井 惇太郎, 荒木 努, 毛利 真一郎
    • Organizer
      日本物理学会2021年秋季大会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] Metal Deposition on a Suspended Graphene Surface2021
    • Author(s)
      Y. Kawase, K. Matsushima, J. Doi, T. Araki, S. Mouri
    • Organizer
      The 61st Fullerenes-Nanotubes-Graphene General Symposium
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] 透過電子顕微鏡を用いたScAlMgO4基板上RF-MBE 成長GaN の極微構造評価2021
    • Author(s)
      和田 邑一, 黒田 悠弥, 栢本 聖也, 後藤 直樹, 藤井 高志, 毛利 真一郎, 白石 裕児, 福田 承生, 荒木 努
    • Organizer
      日本材料学会 2021年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] 高温アニールしたAlNテンプレート上のAlGaN成長における異常成長の起源2021
    • Author(s)
      上杉 謙次郎, 手銭 雄太, 肖 世玉, 則松 研二, 岡村 実奈, 荒木 努, 三宅 秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] DERI法を用いたInN結晶成長の成長温度依存性に関する研究2021
    • Author(s)
      張 同舟, 後藤 直樹, 毛利 真一郎, 荒木 努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] ラマン分光を用いた架橋ツイスト2層グラフェンの熱伝導測定2021
    • Author(s)
      土井 惇太郎, 荒木 努, 毛利 真一郎
    • Organizer
      日本物理学会2021年秋季大会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] THz-TDSエリプソメトリを用いたグラフェンの電気的特性評価2021
    • Author(s)
      鈴木 拓輝, 藤井 高志, 毛利 真一郎, 岩本 敏志, 上田 悠貴, 成塚 重弥, 中嶋 誠, 荒木 努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] Surface Potential of MoS2 Depending on the Polarity of GaN Substrate Measured by Kelvin Probe Force Microscope2021
    • Author(s)
      R. Kaipeng, Y. Komichi, T. Araki and S. Mouri
    • Organizer
      The 12th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2021)
    • Invited
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] 架橋グラフェン上における窒化インジウムのファンデルワールスエピタキシー2021
    • Author(s)
      河瀬裕太, 松島健太, 土井惇太郎, 荒木努, 毛利真一郎
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] Effect of Supported Substrate on van der Waals Epitaxy of Nitride Semiconductors on Graphene by MBE2021
    • Author(s)
      S. Mouri, K. Matsushima, Y. Kawase, T. Araki
    • Organizer
      NT21: International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] Surface Potential of MoS2 Depending on the Polarity of GaN Substrate Measured by Kelvin Probe Force Microscope2021
    • Author(s)
      R. Kaipeng, Y. Komichi, T. Araki and S. Mouri
    • Organizer
      The 12th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] RF-MBE法を用いたN極性AlNテンプレート基板上InN結晶成長2021
    • Author(s)
      篠田 悠平, 福田 安莉, 橘 秀紀, 毛利 真一郎, 正直 花奈子, 三宅 秀人, 荒木 努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] AlNテンプレート基板上にRF-MBE法で成長したInNの発光特性2021
    • Author(s)
      中山 大輝, 毛利真一郎, 福田安莉, 高林佑介, 正直花奈子, 三宅秀人, 荒木努
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] Growth and Raman Characterization of Non-Bernal Stacking Few-Layer Graphene by Alcohol CVD Method2021
    • Author(s)
      T. Asada, S. Yabuta, T. Araki and S. Mouri
    • Organizer
      40th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-21H01017

  • [Presentation] ScAlMgO4基板上窒化物半導体結晶RF-MBE 成長の最近の進展2021
    • Author(s)
      荒木努
    • Organizer
      第13回ナノ構造エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-21H01831

  • [Presentation] Growth and Raman Characterization of Non-Bernal Stacking Few-Layer Graphene by Alcohol CVD Method2021
    • Author(s)
      T. Asada, S. Yabuta, T. Araki and S. Mouri
    • Organizer
      40th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] 架橋グラフェン上における窒化インジウムのファンデルワールスエピタキシー2021
    • Author(s)
      河瀬裕太, 松島健太, 土井惇太郎, 荒木努, 毛利真一郎
    • Organizer
      2021年秋季第82回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-21K18913

  • [Presentation] 高品質AlN 上 RF MBE 成長 InN の極微構造評価 (II)2020
    • Author(s)
      橘 秀紀、高林 佑介、中村 亮介、毛利真一郎、名西ヤスシ、荒木努、正直花奈子、三宅 秀人
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] Van der Waals Epitaxy of Gallium Nitride on Graphene2019
    • Author(s)
      U. Ooe, S. Mouri, Y. Nanishi, T. Araki
    • Organizer
      第56回フラーレン・ナノチューブグラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Indium Nitride Growth with in situ Surface Modification by RF-MBE2019
    • Author(s)
      T. Araki, F. Abas, H. Omatsu, S. Mouri, Y. Nanishi
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Remote Homoepitaxy of GaN on Graphene using RF-MBE2019
    • Author(s)
      U. Ooe, S. Mouri, Y. Nanishi, and T. Araki
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE法を用いた高品質AlN上へのInN成長2019
    • Author(s)
      橘秀紀，F.B.Abas，高林祐介，毛利真一郎，名西ヤスシ，荒木努，正直花奈子，三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] RF-MBE InN Growth on High-Quality AlN Template2019
    • Author(s)
      Y. Takabayashi, H. Tachibana, F. B. Abs, S. Mouri, T. Araki, H. Miyake, K. Uesugi, K. Shojiki
    • Organizer
      13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] Indium Nitride Growth with in situ Surface Modification by RF-MBE2019
    • Author(s)
      T. Araki, F. Abas, H. Omatsu, S. Mouri, Y. Nanishi
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE法を用いたGaNのリモートホモエピタキシャル成長2019
    • Author(s)
      大江 佑京,毛利 真一郎,名西 やす之,荒木 努
    • Organizer
      2019年春季第66回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Metal-Covered Van Der Waals Epitaxy of GaN on Graphitic Substrates by ECR-MBE2019
    • Author(s)
      U. Ooe, S. Mouri, F.Abas,Y. Nanishi, and T. Araki
    • Organizer
      The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE成長InNに対する熱処理の効果2019
    • Author(s)
      福田安莉，橘秀紀，高林祐介，後藤直樹, 毛利真一郎，名西?之，荒木努，正直花奈子，三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] RF-MBE法GaInNヘテロエピタキシャル成長における放射光その場X線回折測定2019
    • Author(s)
      山口 智広, 佐々木 拓生, 高橋 正光, 尾沼 猛儀, 本田 徹,　荒木 努,　名西 やす之
    • Organizer
      2019年春季第66回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] 高品質AlN上RF-MBE成長InNの極微構造評価2019
    • Author(s)
      荒木 努、橘 秀紀、高林 佑介、福田 安莉、毛利 真一郎、名西ヤスシ、正直 花奈子、三宅 秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415

  • [Presentation] In situ XRD RSM Measurements in MBE Growth of GaInN at Different Temperatures2019
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahasi, S. Ohno, T. Araki, Y. Nanishi, T. Onuma, T. Honda
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Van der Waals Epitaxy of Nitride Semiconductors Towards Energy Conversion Devices2018
    • Author(s)
      S. Mouri, Y. Miyauchi, K. Matsuda, Y. Nanishi, T. Araki
    • Organizer
      The 9th International Symposium of Advanced Energy Science - Interplay for Zero-Emission Energy -
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Luminescence Enhancement in InN Deposited by Van der Waals Epitaxy on Graphene Interlayer2018
    • Author(s)
      D. Dobrovolskas, S. Arakawa, S. Mouri, T. Araki, Y. Nanishi, J. Mickevicius, and G. Tamulaitis
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Epitaxial InN Growth with in situ Surface Reformation by Radical Beam Irradiation2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] In situ XRD RSM Measurements in MBE Growth of GaInN on InN2018
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahasi, T. Onuma, T. Honda, T. Araki, and Y. Nanishi
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Nitrogen Plasma Effects on MBE Growth of GaN on Graphitic Substrate2018
    • Author(s)
      U. Ooe, S. Arakawa, S. Mouri, Y. Nanishi, T. Araki
    • Organizer
      The 7th International Symposium on Growth of Ⅲ-nitrides
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of Electrical Properties of InN Epilayer using Terahertz Time-Domain Spectroscopic Ellipsometry2018
    • Author(s)
      K. Morino, T. Fujii, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Metal Covered Van Der Waals Wpitaxy of GaN Thin Film on Graphene2018
    • Author(s)
      U. Ooe, S. Mouri, Y. Nanishi, and T. Araki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Recent Progress and Challenges of InN and In-rich InGaN Growth by RF-MBE using DERI Process2018
    • Author(s)
      Y. Nanishi, T. Yamaguchi, S. Mouri, T. Araki, T. Sasaki, M. Takahashi
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] THzエリプソメトリーによるInN薄膜の電気特性評価22018
    • Author(s)
      森野健太,藤井高志,毛利真一郎,荒木努,名西やす之
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] 放射光を活用したIn 系窒化物半導体成長中のその場観察2018
    • Author(s)
      山口智広,佐々木拓生,高橋正光,尾沼猛儀,本田徹,荒木努,名西やす之
    • Organizer
      JAEA-QST放射光科学シンポジウム2018
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Recent Progress and Challenges of InN and In-rich InGaN by RF-MBE Growth2018
    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki
    • Organizer
      14th International Conference on Modern Materials and Technologies (CIMTEC 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Mg ドーピングによる高 In 組成 InGaN の表面-バルク電子状態変化2018
    • Author(s)
      井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] グラフェンを犠牲層とした剥離可能GaNのホモエピタキシャル成長2018
    • Author(s)
      大江 佑京,毛利 真一郎,名西 やす之,荒木 努
    • Organizer
      2018年秋季第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Metal Covered Van Der Waals Epitaxy of GaN Thin Film on Graphene2018
    • Author(s)
      U. Ooe, S. Mouri, Y. Nanishi, and T. Araki
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Luminescence Enhancement in InN Deposited by Van der Waals Epitaxy on Graphene Interlayer2018
    • Author(s)
      D. Dobrovolskas, S. Arakawa, S. Mouri, T. Araki, Y. Nanishi, J. Mickevicius, and G. Tamulaitis
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Van der Waals Epitaxy of Nitride Semiconductors Towards Energy Conversion Devices2018
    • Author(s)
      S. Mouri, Y. Miyauchi, K. Matsuda, Y. Nanishi, T. Araki
    • Organizer
      The 9th International Symposium of Advanced Energy Science - Interplay for Zero-Emission Energy-
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] In-situ Surface Modification of InN Films by Nitrogen Radical Irradiation and Thermal Annealing2018
    • Author(s)
      H. Omatsu, F. B. Abas, R. Fujita, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      37th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] In-situ Surface Modification of InN Films by Nitrogen Radical Irradiation and Thermal Annealing2018
    • Author(s)
      H. Omatsu, F. B. Abas, R. Fujita, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      37th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] 放射光X線回折測定を用いたGaInN/InN成長のその場観察～InN解離温度領域での振る舞い～2018
    • Author(s)
      山口智広,佐々木拓生,高橋正光,尾沼猛儀,本田徹,荒木努,名西やす之
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Recent Progress and Challenges of InN and In-rich InGaN by RF-MBE using DERI Process2018
    • Author(s)
      Y. Nanishi, T. Yamaguchi, S. Mouri, T. Araki, T. Sasaki, M. Takahashi
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Nitrogen Plasma Effects on MBE Growth of GaN on Graphitic Substrate2018
    • Author(s)
      U. Ooe, S. Arakawa, S. Mouri, Y. Nanishi, T. Araki
    • Organizer
      The 7th International Symposium on Growth of Ⅲ-nitrides
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] RF-MBE 法によるMetal-rich 条件下でのAl1-xInxN 成長2018
    • Author(s)
      黒田 古都美,川原 達也,毛利 真一郎,荒木 努,名西 やす之
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] ECR-MBE法によるグラフェン上へのGaN成長における窒素プラズマの効果2018
    • Author(s)
      大江 佑京,荒川 真吾,毛利 真一郎,荒木 努,名西 やす之
    • Organizer
      応用物理学会関西支部 平成30年度第1回講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Epitaxial InN Growth with in situ Surface Reformation by Radical Beam Irradiation2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Growth of InN and In-rich InGaN by RF-MBE　-Present Status and Challenges-2018
    • Author(s)
      Y. Nanishi, T. Yamaguchi, S. Mouri, T. Araki, T. Sasaki, M. Takahashi and J. Suda
    • Organizer
      10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Effects of Nitrogen Radical Irradiation on InN Growth by RF-MBE2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, Y. Nanishi, and T. Araki
    • Organizer
      The 7th International Symposium on Growth of Ⅲ-nitrides
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] 架橋したMoS2/MoSe2積層ヘテロ構造の熱伝導2018
    • Author(s)
      毛利真一郎, 福島駿介, 宮内雄平, 松田一成, 名西やす之, 荒木努
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Effects of Nitrogen Radical Irradiation on InN Growth by RF-MBE2018
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, Y. Nanishi, and T. Araki
    • Organizer
      The 7th International Symposium on Growth of Ⅲ-nitrides
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] 窒化インジウムの低転位化結晶成長技術2018
    • Author(s)
      荒木努，F. B. Abas，毛利真一郎，名西やすし
    • Organizer
      平成30年電気関係学会関西連合大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Characterization of Electrical Properties of InN Epilayer using Terahertz Time-Domain Spectroscopic Ellipsometry2018
    • Author(s)
      K. Morino, T. Fujii, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] 窒化インジウムの低転位化結晶成長技術2018
    • Author(s)
      荒木 努,F. B. Abas,毛利 真一郎,名西 やす之
    • Organizer
      平成30年電気関係学会関西連合大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Systematic Investigation of Surface and Bulk Electronic Structures of Unintentionally-Doped InxGa1-xN (0≦x≦1) Epilayers by Hard X-ray Photoelectron Spectroscopy2018
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Ryan, H. Yoshikawa, A. L. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE法によるグラフェン上での窒化物半導体成長における初期過程2018
    • Author(s)
      大江佑京,荒川真吾,内村智,毛利真一郎,荒木努,名西やす之
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of Ohmic Contact on Alpha-Ga2O3 Thin Film2018
    • Author(s)
      S. Aoyama, T. Matsuda, T. Shinohe, J. Kikawa, Y. Nanishi, T. Araki
    • Organizer
      37th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Surface and Bulk Electronic Structures of Unintentionally-Doped InGaN Epilayers by Hard X-ray Photoelectron Spectroscopy2018
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, H. Yoshikawa, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, T. Araki and Y. Nanishi
    • Organizer
      37th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE 法を用いたMetal-rich 条件下でのInAlN の成長2018
    • Author(s)
      黒田古都美,毛利真一郎,荒木努,名西やす之
    • Organizer
      2018年春季第65回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] グラファイト上にMBE成長したInNナノ結晶の発光特性2018
    • Author(s)
      毛利 真一郎,荒川 真吾,D. Darius,M. Juras,T. Gintautas,名西 やす之,荒木 努
    • Organizer
      2018年秋季第79回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Evaluation of Nitride Semiconductors Using Terahertz Time-Domain Spectroscopic Ellipsometry2017
    • Author(s)
      T. Araki, K. Tachi, K. Morino, S. Asagami, T. Fujii, Y. Nanishi, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17)
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市)
    • Year and Date
      2017-04-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] DERI法を用いたサファイア上N極性InN成長2017
    • Author(s)
      久保中 湧士，毛利真一郎，荒木 努，名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      Faizulsalihin binAbas、binti Zainol Abidin Nur Liyana、Fujita Ryoichi、Mouri Shinichiro、Araki Tsutomu、Nanishi Yasushi
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] THzエリプソメトリーによるInN薄膜の電気的特性測定に関する検討2017
    • Author(s)
      森野 健太，達 紘平，藤井 高志，毛利 真一郎，荒木 努，名西 やす之，長島 健，岩本 敏志，佐藤 幸徳
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of Electrical Properties of InN Epilayer using THz Ellipsometry2017
    • Author(s)
      K. Morino, T. Fujii, S. Mouri, T. Araki, Y. Nanishi, T. Nagashima, T. Iwamoto, Y. Sato
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] α-Ga2O3の表面バンドベンディングに関する研究2017
    • Author(s)
      藤木嘉樹, 城川潤二郎, 荒木努, 名西やす之, 松田時宜, 四戸孝
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Nラジカルビーム照射による in-situ表面改質の InN成長への効果2017
    • Author(s)
      藤田 諒一、Faizulsalihin bin Abas、Nur Liyana binti Zainol Abidin、毛利 真一、荒木 努、名西 やすし
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] グラフェン上での窒化物半導体のエピタキシャル成長2017
    • Author(s)
      荒川真吾,久保中湧士,黒田古都美,毛利真一郎,荒木努,名西やす之
    • Organizer
      第53回フラーレン・ナノチューブグラフェンシンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] α-Ga2O3の表面バンドベンディングの評価2017
    • Author(s)
      藤木嘉樹, 城川潤二郎, 荒木努, 名西やす之, 織田真也
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Threading Dislocation Behavior in InN Grown with In-situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      F. Abas, R. Fujita, N. L. Z. Abidin, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Nラジカルビーム照射によるin-situ表面改質のInN成長への効果2017
    • Author(s)
      藤田諒一，Faizulsalihin bin Abas，Nur Liyana binti Zainol Abidin，毛利真一郎，荒木努，名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] GaN上およびInN上GaInN成長における成長初期過程の観察2017
    • Author(s)
      山口智広,佐々木拓生,高橋正光,尾沼猛儀,本田徹,荒木努,名西やす之
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Outstanding Capability of In-situ Monitoring Techniques in RF-MBE Growth of InN and GaInN2017
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahasi, T. Araki, T. Onuma, T. Honda, and Y. Nanishi
    • Organizer
      2017 International Symposium on Novel and Sustainable Technology (2017 ISNST)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of AlGaN on Nitridated α-(AlGa)2O3 Grown by Mist-CVD2017
    • Author(s)
      T. Araki, A. Buma, S. Fukushima, Y. Fujiki, Y. Nanishi, T. Sasaki, S. Fujikawa, M. Takahashi, M. Oda, T. Hitora
    • Organizer
      International Workshop on UV Materials and Devices 2017 (IWUMD2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Epitaxial Growth of Transferable Indium Nitride on Graphene2017
    • Author(s)
      S. Mouri, S. Arakawa, U. Oe, S. Kutsuno, Y. Kubonaka, K. Kuroda, T. Araki, Y. Nanishi
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of Indium Nitride on Graphene Substrate2017
    • Author(s)
      S. Arakawa, Y. Kubonaka, S. Mouri, T. Araki, Y. Nanishi
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Electron Spin Resonance study of Sn doped α- Ga2O32017
    • Author(s)
      J. Kikawa, T. Matsuda, T. Shinohe, T. Araki , and Y. Nanishi
    • Organizer
      2nd International Workshop on Gallium Oxide and Related Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Growth of Nitrogen-Polar InN on Sapphire Substrate by DERI Method2017
    • Author(s)
      Y. Kubonaka, S. Mouri, T. Araki, Y. Nanishi
    • Organizer
      The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy2017
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of GaN on Si(100) Substrates2017
    • Author(s)
      T. Araki, Y. Nanishi
    • Organizer
      9th International Conference on Materials for Advanced Technologies (ICMAT2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] ラマン分光による遷移金属ダイカルコゲナイドヘテロ構造の熱伝導評価2017
    • Author(s)
      毛利真一郎, 名西やす之, 荒木努
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] THzエリプソメトリーによるInN表面電荷蓄積層の電気特性評価2017
    • Author(s)
      森野健太,藤井高志,毛利真一郎,荒木努,名西やす之,長島健,岩本敏志,佐藤幸徳
    • Organizer
      2017年 第9回窒化物半導体結晶成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Dislocation Reduction in InN Film Grown with in Situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      F. Abas，藤田 諒一，毛利 真一郎，荒木 努，名西やすし
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Study on Surface Band Bending of α-Ga2O3 Grown by Mist -CVD2017
    • Author(s)
      Y. Fujiki, J. Kikawa, T. Araki, Y. Nanishi, T. Matsuda, T. Shinohe
    • Organizer
      2nd International Workshop on Gallium Oxide and Related Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] DERI法を用いたサファイア上N極性InN成長2017
    • Author(s)
      久保中 湧士，毛利真一郎，荒木 努，名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE法によるグラファイト上へのInN成長2017
    • Author(s)
      荒川真吾、久保中湧士、毛利真一郎、荒木努、名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Compositional Pulling Effect in Epitaxial Growth of GaInN by RF-MBE2017
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahasi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      Faizulsalihin bin Abas，Nur Liyana binti Zainol Abidin，藤田 諒一，毛利 真一郎，荒木 努，名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] THzエリプソメトリーによるInN薄膜の電気的特性測定に関する検討2017
    • Author(s)
      森野 健太，達 紘平，藤井 高志，毛利 真一郎，荒木 努，名西 やす之，長島 健，岩本 敏志，佐藤 幸徳
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Dislocation Reduction in InN Film Grown with in Situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      F. Abas,藤田諒一,毛利真一郎,荒木努,名西やす之
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Threading Dislocations Behavior in InN Films Regrown on N Radical Irradiated InN Template2017
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] Thermal Transport Properties of MoS2/MoSe2 Hetero Structure Evaluated by Raman Spectroscopy2017
    • Author(s)
      S. Mouri, Y. Nanishi, T. Araki
    • Organizer
      The 3rd International Conference on 2D Materials and Technology (ICON-2DMAT 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Reduction of Treading Dislocation Density in InN Film Grown with in Situ Surface Reformation by Radio-Frequency Plasma-Excited Molecular Beam Epitaxy2017
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      2017 MRS Fall Meeting and Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE法によるグラファイト上へのInN成長2017
    • Author(s)
      荒川真吾、久保中湧士、毛利真一郎、荒木努、名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Charge States of SiO2 by Kelvin Probe Force Microscopy and C-V Measurement for GaN Based Power Device Application2017
    • Author(s)
      Chen Yu Ting, J. Kikawa, T. Araki, Y. Nanishi
    • Organizer
      2017 International Symposium for Advanced Materials Research (ISAMR 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Reduction of Treading Dislocation Density in InN Film Grown with in Situ Surface Reformation by Radio-Frequency Plasma-Excited Molecular Beam Epitaxy2017
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      2017 MRS Fall Meeting and Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] MBEを用いたDERI法によるInGaNの組成制御に関する研究2017
    • Author(s)
      山口雄斗,毛利真一郎,荒木努,名西やす之
    • Organizer
      応用物理学会関西支部　平成29年度第2回講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Charge States of SiO2 by Kelvin Probe Force Microscopy and C-V Measurement for GaN Based Power Device Application2017
    • Author(s)
      Y.T. Chen, J. Kikawa, T. Araki, Y. Nanishi
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] グラファイト上InN成長における緩衝層の効果2017
    • Author(s)
      荒川真吾,久保中湧士,黒田古都美,大江佑京, 毛利真一郎,荒木努,名西やす之
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Evaluation of Nitride Semiconductors Using Terahertz Time-Domain Spectroscopic Ellipsometry2017
    • Author(s)
      T. Araki, K. Tachi, K. Morino, S. Asagami, T. Fujii, Y. Nanishi, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama
    • Organizer
      The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17)
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市)
    • Year and Date
      2017-04-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      Faizulsalihin bin Abas，Nur Liyana binti Zainol Abidin，藤田 諒一，毛利 真一郎，荒木 努，名西 やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] N ラジカルビーム照射によるin-situ 表面改質のInN 成長への効果2017
    • Author(s)
      藤田諒一,F. Abas,片桐温,毛利真一郎,荒木努,名西やす之
    • Organizer
      2017年 第9回窒化物半導体結晶成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Influence of Nitrogen Radical Beam Irradiation on MBE Growth of InN2017
    • Author(s)
      K. Watanabe, S. Usuda, A. Katagiri, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      The 8th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] New Approach for MBE Growth and Applications of High Quality InN and In-rich InGaN2017
    • Author(s)
      Y. Nanishi, T.Yamaguchi and T.Araki
    • Organizer
      2017 International Symposium for Advanced Materials Research (ISAMR 2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] THz エリプソメトリーによるInN 薄膜の電気特性評価2017
    • Author(s)
      森野健太,藤井高志,毛利真一郎,荒木努,名西やす之,長島健,岩本敏志,佐藤幸徳
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] N ラジカルビーム照射によるin-situ 表面改質のInN 成長への効果2017
    • Author(s)
      藤田諒一，F. Abas，片桐温，毛利真一郎，荒木努，名西やすし
    • Organizer
      2017年 第9回窒化物半導体結晶成長講演会
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] RF-MBE 法を用いたInN 成長におけるN*照射の影響2017
    • Author(s)
      渡邊一生,臼田知志, 片桐温, 毛利真一郎,荒木努,名西やす之
    • Organizer
      2017年秋季第78回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] ラマン分光によるMoS2を含むファンデルワールスへテロ構造の熱伝導評価2017
    • Author(s)
      毛利真一郎,名西やす之,荒木努
    • Organizer
      第53回フラーレン・ナノチューブグラフェンシンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Threading Dislocation Behavior in InN Grown with In-situ Surface Reformation by Radical Beam Irradiation2017
    • Author(s)
      F. Abas, R. Fujita, N. L. Z. Abidin, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      International Conference on Defects in Semiconductors (ICDS 2017)
    • Place of Presentation
      Shimane Prefectural Convention Center, Matsue
    • Year and Date
      2017-07-31
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H03860

  • [Presentation] α-Ga2O3の表面バンドベンディングの評価2017
    • Author(s)
      藤木嘉樹, 城川潤二郎, 荒木努, 名西やす之, 織田真也
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Nラジカルビーム照射によるin-situ表面改質のInN成長への効果2017
    • Author(s)
      藤田諒一，Faizulsalihin bin Abas，Nur Liyana binti Zainol Abidin，毛利真一郎，荒木努，名西やす之
    • Organizer
      2017年春季第64回応用物理学会学術講演会
    • Place of Presentation
      パシフィコ横浜（神奈川県・横浜市）
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Surface Band Bending of α-Ga2O3 Grown by Mist-CVD2017
    • Author(s)
      Y. Fujiki, J. Kikawa, T. Araki, Y. Nanishi, T. Matsuda, T. Shinohe
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Threading Dislocations Behavior in InN Films Regrown on N Radical Irradiated InN Template2017
    • Author(s)
      F. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Influence of Nitrogen Radical Beam Irradiation on MBE Growth of InN2017
    • Author(s)
      K. Watanabe, S. Usuda, A. Katagiri, S. Mouri, T. Araki, and Y. Nanishi
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] In-Situ Monitoring in RF-MBE Growth of In-Based Nitrides2016
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      15th International Symposium on Advanced Technology
    • Place of Presentation
      Tainan City (Taiwan)
    • Year and Date
      2016-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of Electrical Properties of n-type GaN Layer Using Terahertz Time-Domain Spectroscopic Ellipsometry2016
    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Recent Advancements and Challenges of Growth of InN and In-rich InGaN by DERI Method2016
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      EMN Meeting on Epitaxy
    • Place of Presentation
      Budapest (Hungary)
    • Year and Date
      2016-09-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of GaN Layer Using THz Ellipsometry and Its Verification by Cross-Sectional Observation2016
    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場（愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] In-Situ Monitoring in RF-MBE Growth of In-Based Nitrides2016
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      15th International Symposium on Advanced Technology
    • Place of Presentation
      Tainan City (Taiwan)
    • Year and Date
      2016-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016
    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016
    • Author(s)
      福島駿介 , 臼田知志 , 荒木努, 名西やす之
    • Organizer
      2016年秋季 第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市）
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場（愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
    • Organizer
      The 43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      Toyama International Conference Center (富山県富山市)
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03998

  • [Presentation] Characterization of GaN Layer Using THz Ellipsometry and Its Verification by Cross-Sectional Observation2016
    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場（愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Study on Microstructure and Thermal Stability of Rf-Plasma Nitridated α-(AlGa)2O3 Grown by Mist-CVD2016
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of β-Ga2O3 Single Crystal Based Schottky Barrier Diode2016
    • Author(s)
      Y. Fujiki, T. Araki, Y. Moon, A. Kim and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-08
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques2016
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2016-09-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of III-Nitride Semiconductors Using Electron-Beam-Induced-Current (EBIC) Measurement2016
    • Author(s)
      E. Oku, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode2016
    • Author(s)
      K. Komura, T. Araki, Y. Nanishi, T. Akasaka
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of Electrical Properties of n-type GaN Layer Using Terahertz Time-Domain Spectroscopic Ellipsometry2016
    • Author(s)
      K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
    • Author(s)
      A. Buma, N. Masuda, M. Oda, T. Hitora, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016
    • Author(s)
      福島駿介,臼田知志,荒木努,名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of β-Ga2O3 Single Crystal Based Schottky Barrier Diode2016
    • Author(s)
      Y. Fujiki, T. Araki, Y. Moon, A. Kim and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-08
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Recent Advancement of Growth of InN and In-rich InGaN by RF-MBE2016
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      45th International School on the Physics of Semiconducting Compounds
    • Place of Presentation
      Szczyrk (Poland),
    • Year and Date
      2016-06-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016
    • Author(s)
      福島駿介 , 臼田知志 , 荒木努, 名西やす之
    • Organizer
      2016年秋季 第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市）
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode2016
    • Author(s)
      K. Komura, T. Araki, Y. Nanishi, T. Akasaka
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] THzエリプソメトリーによるn型GaN膜の電気的特性評価2016
    • Author(s)
      達紘平，浅上史歩，藤井高志，荒木努，名西やす之，長島健，岩本敏志，佐藤幸徳，森田直威，杉江隆一，上山智
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Recent Advancements and Challenges of Growth of InN and In-rich InGaN by DERI Method2016
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      EMN Meeting on Epitaxy
    • Place of Presentation
      Budapest (Hungary)
    • Year and Date
      2016-09-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Fluorine Plasma Treatment on InN Films Grown by RF-MBE2016
    • Author(s)
      S. Fukushima, S. Usuda, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Fluorine Plasma Treatment on InN Films Grown by RF-MBE2016
    • Author(s)
      S. Fukushima, S. Usuda, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Study on Microstructure and Thermal Stability of Rf-Plasma Nitridated α-(AlGa)2O3 Grown by Mist-CVD2016
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      International Workshop on Nitride Semiconductor 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida (USA)
    • Year and Date
      2016-10-03
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
    • Organizer
      the 43rd International Symposium on Compound Semiconductors
    • Place of Presentation
      Toyama International Conference Center(Toyama, Toyama),Japan
    • Year and Date
      2016-06-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04357

  • [Presentation] RF-MBE法によるGaN/Sapphire上へのMgドーピングGaN成長2016
    • Author(s)
      藤田諒一, 松田雅大, 荒木努, 名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] THzエリプソメトリーによるn型GaN膜の電気的特性評価2016
    • Author(s)
      達紘平，浅上史歩，藤井高志，荒木努，名西やす之，長島健，岩本敏志，佐藤幸徳，森田直威，杉江隆一，上山智
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] フッ素プラズマによるInNの表面電荷蓄積層の影響軽減に関する研究2016
    • Author(s)
      福島駿介,臼田知志,荒木努,名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
    • Author(s)
      A. Buma, N. Masuda, M. Oda, T. Hitora, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Characterization of III-Nitride Semiconductors Using Electron-Beam-Induced-Current (EBIC) Measurement2016
    • Author(s)
      E. Oku, T. Araki and Y. Nanishi
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖（滋賀県・守山市）
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Recent Advancement of Growth of InN and In-rich InGaN by RF-MBE2016
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      45th International School on the Physics of Semiconducting Compounds"Jaszowiec 2016"
    • Place of Presentation
      Szczyrk (Poland)
    • Year and Date
      2016-06-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of GaInN Ternary Alloys Using in-situ Monitoring Techniques2016
    • Author(s)
      T. Yamaguchi, T. Sasaki, M. Takahashi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば国際会議場(茨城県・つくば市)
    • Year and Date
      2016-09-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      名古屋国際会議場（愛知県・名古屋市)
    • Year and Date
      2016-08-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Study on Nitridation of α-(AlGa)2O3 Using Rf Plasma for AlGaN Growth2016
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, T. Hitora
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya Congress Center (愛知県名古屋市)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03998

  • [Presentation] RF-MBE法によるGaN/Sapphire上へのMgドーピングGaN成長2016
    • Author(s)
      藤田諒一, 松田雅大, 荒木努, 名西やす之
    • Organizer
      第8回窒化物結晶成長講演会
    • Place of Presentation
      京都大学（京都府・京都市）
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Si基板上縦型高出力AlGaN FET実現を目指した導電性AlNバッファ層（v-AlN層）の形成2016
    • Author(s)
      Noriko Kurose, Kota Ozeki, Tsutomu Araki, and Yoshinobu Aoyagi
    • Organizer
      応用物理学会秋季学術講演会2016 シンポジウム
    • Place of Presentation
      新潟コンベンションセンター (新潟県、新潟市）
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-16H04357

  • [Presentation] Comprehensive Study on Inductively Coupled Plasma Reactive Ion Etching of GaN and InN2015
    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma and T. Honda
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera (Mexico)
    • Year and Date
      2015-10-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Idea to Passivate Dislocations by Positive Usage of Phase Separation in InGaN2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      京都大学（京都府京都市）
    • Year and Date
      2015-07-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of InN on Mist-CVD Grown α-In2O3/Sapphire2015
    • Author(s)
      T. Araki, N. Masuda, A. Buma, Y. Nanishi, M. Oda and T. Hitora
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '15)
    • Place of Presentation
      パシフィコ横浜（神奈川県横浜市）
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Comprehensive Study on Inductively Coupled Plasma Reactive Ion Etching of GaN and InN2015
    • Author(s)
      K. Narutani, T. Yamaguchi, T. Araki, Y. Nanishi, T. Onuma and T. Honda
    • Organizer
      The 31st North American Conference on Molecular Beam Epitaxy (NAMBE 2015)
    • Place of Presentation
      Mayan Riviera　(Mexico)
    • Year and Date
      2015-10-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth Mechanisms of InN and Its Alloys Using Droplet Elimination by Radical Beam Irradiation2015
    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
    • Organizer
      2015 EMN Meeting on Droplets
    • Place of Presentation
      Phuket (Thailand)
    • Year and Date
      2015-05-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Progress in GaInN Growth by RF-MBE and Development to Optical Device Fabrication2015
    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda, Y. Nanishi
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Fransisco, USA
    • Year and Date
      2015-02-09
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of RF Plasma Nitridated α-(AlGa)2O3 for AlGaN Growth2015
    • Author(s)
      T. Araki, A. Buma, N. Masuda, M. Oda, T. Hitora, and Y. Nanishi
    • Organizer
      The 4th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '16)
    • Place of Presentation
      パシフィコ横浜（神奈川県横浜市）
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During InGaN Growth by DERI Method2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Hong Kong (China)
    • Year and Date
      2015-12-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Idea to Passivate Dislocations by Positive Usage of Phase Separation in InGaN2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      京都大学（京都府京都市）
    • Year and Date
      2015-07-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth and Characterization of InN on α-In2O3/Sapphire by RF-MBE2015
    • Author(s)
      N. Masuda, A. Buma, T. Araki, Y. Nanishi, M. Oda, and T. Hitora,
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Seoul (Korea)
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During InGaN Growth by DERI Method2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Hong Kong (China)
    • Year and Date
      2015-12-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth Mechanisms of InN and Its Alloys Using Droplet Elimination by Radical Beam Irradiation2015
    • Author(s)
      T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi,
    • Organizer
      2015 EMN Meeting on Droplets
    • Place of Presentation
      Phuket (Thailand)
    • Year and Date
      2015-05-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During RF-MBE Growth of InGaN2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki
    • Organizer
      The 3rd International Conference on Advanced Electromaterials (ICAE2015)
    • Place of Presentation
      Jeju (Korea)
    • Year and Date
      2015-11-18
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth and Structural Characterization of InN on Mist-CVD-grownα-In2O3/Sapphire2015
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, and T. Hitora
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides,
    • Place of Presentation
      アクトシティ浜松（静岡県浜松市）
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth and Characterization of Thin InN Films Grown by RF-MBE2015
    • Author(s)
      A. Usuda, K. Komura, M. Aranami, T. Araki, and Y. Nanishi
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides
    • Place of Presentation
      アクトシティ浜松（静岡県浜松市）
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth and Structural Characterization of InN on Mist-CVD-grownα-In2O3/Sapphire2015
    • Author(s)
      A. Buma, N. Masuda, T. Araki, Y. Nanishi, M. Oda, and T. Hitora
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides
    • Place of Presentation
      アクトシティ浜松（静岡県浜松市）
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] RF-MBE Growth of InN on Mist-CVD Grown α-In2O3/Sapphire2015
    • Author(s)
      T. Araki, N. Masuda, A. Buma, Y. Nanishi, M. Oda and T. Hitora
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      パシフィコ横浜（神奈川県横浜市）
    • Year and Date
      2015-04-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth and Characterization of InN on α-In2O3/Sapphire by RF-MBE2015
    • Author(s)
      N. Masuda, A. Buma, T. Araki, Y. Nanishi, M. Oda, and T. Hitora
    • Organizer
      The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015)
    • Place of Presentation
      Seoul (Korea)
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559

  • [Presentation] Dislocation Passivation by Positive Usage of Phase Separation During RF-MBE Growth of InGaN2015
    • Author(s)
      Y. Nanishi, T. Yamaguchi, and T. Araki,
    • Organizer
      The 3rd International Conference on Advanced Electromaterials (ICAE2015)
    • Place of Presentation
      Jeju (Korea)
    • Year and Date
      2015-11-18
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Growth and Characterization of Thin InN Films Grown by RF-MBE2015
    • Author(s)
      A. Usuda, K. Komura, M. Aranami, T. Araki, and Y. Nanishi
    • Organizer
      The 6th International Symposium on Growth of Ⅲ-nitrides
    • Place of Presentation
      アクトシティ浜松（静岡県浜松市）
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Characterization of RF Plasma Nitridated α-(AlGa)2O3 for AlGaN Growth2015
    • Author(s)
      T. Araki, A. Buma, N. Masuda, M. Oda, T. Hitora, and Y. Nanishi
    • Organizer
      The 4th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      パシフィコ横浜（神奈川県横浜市）
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Novel Vertical AlGaN Deep Ultra Violet Photo-detector on n+Si Substrate using Spontaneous Via Holes Growth Technique2014
    • Author(s)
      Kota Ozeki, Noriko Kurose, Naotaka Iwata*, Kentaro Shibano, Tsutomu Araki, Itaru Kamiya* and Yoshinobu Aoyagi
    • Organizer
      Solid State Device and Materials
    • Place of Presentation
      筑波国際会議場　（茨城県、つくば市）
    • Year and Date
      2014-09-11
    • Data Source
      KAKENHI-PROJECT-25249053

  • [Presentation] New Approach to Fabricate Green, Red and IR Light Sources Based on Nitride Semiconductors by DERI Method2014
    • Author(s)
      Y. Nanishi, T.Yamaguchi and T. Araki,
    • Organizer
      31st International Korea-Japan Seminar on Ceramics
    • Place of Presentation
      Changwon, Korea
    • Year and Date
      2014-11-27
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] DERI Method; Possible Approach to Longer Wavelength Light Emitters Based on Nitride Semiconductors2014
    • Author(s)
      Y. Nanishi, T. Yamaguchi and T. Araki
    • Organizer
      6th Forum on New Materials (CIMTEC2014)
    • Place of Presentation
      Montecatini Terme, Italy
    • Year and Date
      2014-06-18
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Plasma Induced Point Defects in InN During RF-MBE Growth and Those Reduction by DERI Method2014
    • Author(s)
      Y. Nanishi, T. Yamaguchi, T. Araki, A. Uedono and T. Palacios
    • Organizer
      Defects in Semiconductors ,Gordon Research Conference,
    • Place of Presentation
      Walthum, USA
    • Year and Date
      2014-08-05
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Recent Material Studies of III-Nitride Semiconductors for Next Generation Devices2014
    • Author(s)
      Y. Nanishi, T. Yamaguchi, T. Araki,　A. Uedono and T. Palacios,
    • Organizer
      The Professor Harry C. Gatos Lecture and Prize
    • Place of Presentation
      Cambridge, USA
    • Year and Date
      2014-07-24
    • Data Source
      KAKENHI-PROJECT-26600090

  • [Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices2013
    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      Conference on LED and Its Industrial Application (LEDIA-13)
    • Place of Presentation
      パシフィコ横浜(神奈川県)
    • Year and Date
      2013-04-23
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap-2012
    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      2012 Fall Meeting of the Korean Ceramic Society
    • Place of Presentation
      大田(韓国)
    • Year and Date
      2012-10-19
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth2012
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
    • Organizer
      KAUST-UCSB-NSF Workshop on Solid-State Lighting
    • Place of Presentation
      Thwal(サウジアラビア)(招待講演)
    • Year and Date
      2012-02-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies2012
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
    • Organizer
      4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
    • Place of Presentation
      中部大学(愛知県)(基調講演)
    • Year and Date
      2012-03-05
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を応用したInGaN/InGaN量子井戸構造の作製2012
    • Author(s)
      上松尚、山口智広、荒木努、名西〓之
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法InN成長における窒素プラズマパワー依存性2012
    • Author(s)
      荒木努、上松尚、油谷匡胤、阪口順一、齊藤巧、名西〓之, T.Fujishima、E.Matioli、T.Palacios
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Reduction of Threading Dislocation Density by Regrowth on In-Polar InN2012
    • Author(s)
      T.Araki, T.Sakamoto, A.Miki, N.Uematsu, Y.Takamatsu, T.Yamaguchi, Y.Eoon, Y.Nanishi
    • Organizer
      SPIE Photonics West 2012
    • Place of Presentation
      サンフランシスコ(アメリカ)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate2012
    • Author(s)
      王科、荒木努、武内道一、山口智広、名西〓之
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Free Holes in Mg Doped InN Confirmed by Thermopower Experiments2012
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
    • Place of Presentation
      中部大学(愛知県)
    • Year and Date
      2012-03-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] ラジカルモニタリング技術を応用したDERI法InGaN成長の検討2012
    • Author(s)
      阪口順一、上松尚、油谷匡胤、齊藤巧、山口智広、荒木努、名西〓之、T.Fujishima、E.Matioli、T.Palacios
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNおよびInGaN成長の最近の進展-DERI法の結果が示唆すること-2012
    • Author(s)
      名西〓之、山口智広、荒木努
    • Organizer
      東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      東北大学(宮城県)
    • Year and Date
      2012-01-12
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures2012
    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
    • Place of Presentation
      西安(中国)
    • Year and Date
      2012-10-31
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] 窒化物半導体新領域開拓にむけての材料技術最近の展開2012
    • Author(s)
      名西〓之、山口智広、王科、荒木努、E.Yoon
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)(招待講演)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] 窒化物光半導体デバイスの新しい可能性を求めて-InNと関連混晶の新しい成長技術の開発と現状-2011
    • Author(s)
      名西〓之、山口智広、荒木努
    • Organizer
      LED総合フォーラム2011in徳島
    • Place of Presentation
      徳島グランヴィリオホテル(徳島県)(招待講演)
    • Year and Date
      2011-06-25
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Strong Luminescence from Self-Assembled InN Nanocolumns with Few Dislocations Grown by Molecular Beam Epitaxy2011
    • Author(s)
      K.Wang, T.Araki, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
    • Place of Presentation
      グラスゴー(スコットランド)
    • Year and Date
      2011-07-15
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
    • Author(s)
      T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
    • Author(s)
      T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
    • Author(s)
      T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
    • Place of Presentation
      グラナダ(スペイン)
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      グラナダ(スペイン)(招待講演)
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Granada Spain
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Recent Progress of DERI Process for Growth of InN and Related Alloys2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, T.Araki, E.Yoon
    • Organizer
      40th "Jaszowiec" International School and Conference on the Physics of Semiconductors
    • Place of Presentation
      Krynica-Zdroj(ポーランド)(招待講演)
    • Year and Date
      2011-06-29
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics2011
    • Author(s)
      H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
    • Place of Presentation
      グラスゴー(スコットランド)
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] In極性InN上への再成長による貫通転位密度低減2011
    • Author(s)
      荒木努、坂本務、三木彰、上松尚、高松祐基、山口智広、名西やすし
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス(山形県)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Thick InGaN Growth Using DERI Method2011
    • Author(s)
      N.Uematsu, T.Yamaguchi, R.Iwamoto, T.Sakamoto, T.Fujishima, T.Araki, Y.Nanishi
    • Organizer
      30th Electronic Materials Symposium (EMS30)
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県)
    • Year and Date
      2011-07-01
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
    • Author(s)
      T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011
    • Author(s)
      森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE2011
    • Author(s)
      T.Araki, S.Yamashita, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
    • Place of Presentation
      グラスゴー(スコットランド)
    • Year and Date
      2011-07-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Granada Spain
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] DERI法を用いたA面GaNテンプレート上A面InNの作成2011
    • Author(s)
      油谷匡胤、山口智広、荒木努、名西〓之
    • Organizer
      平成23年電気関係学会関西支部連合大会
    • Place of Presentation
      兵庫県立大学書写キャンパス(兵庫県)
    • Year and Date
      2011-10-30
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN2011
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      Electronic Materials Conference 2011 (EMC2011)
    • Place of Presentation
      サンタバーバラ(アメリカ)
    • Year and Date
      2011-06-24
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] ECR-MBE法を用いたA面InNナノ構造の配列制御選択成長2011
    • Author(s)
      荒木努、山下修平、山口智広、名西〓之
    • Organizer
      第41回結晶成長国内会議(NCCG-41)
    • Place of Presentation
      つくば国際会議場(茨城県)(招待講演)
    • Year and Date
      2011-11-04
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy2011
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
    • Place of Presentation
      グラスゴー(スコットランド)
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011
    • Author(s)
      櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011
    • Author(s)
      櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE2011
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      鳥羽国際ホテル(三重県)
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress of InN and Related Alloys Grown by DERI Method2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
    • Organizer
      2011 E-MRS Spring Meeting
    • Place of Presentation
      ニース(フランス)(招待講演)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNおよびGaN成長における原子脱離過程その場観察2011
    • Author(s)
      山口智広、荒木努、本田徹、名西〓之
    • Organizer
      応用物理学会結晶工学分科会主催2011年年末講演会
    • Place of Presentation
      学習院創立百周年記念会館(東京都)
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Study on DERI Growth of InN-Role of Indium Droplet-2011
    • Author(s)
      T.Katsuki, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      30th Electronic Materials Symposium (EMS30)
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県)
    • Year and Date
      2011-07-01
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Granada Spain
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
    • Author(s)
      T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya Institute of Technology, Aichi Japan
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] In Situ Monitoring Techniques by DERI Method2011
    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
    • Organizer
      30th Electronic Materials Symposium (EMS30)
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県)
    • Year and Date
      2011-07-01
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011
    • Author(s)
      森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Application of DERI Method to InGaN Growth and Mg Doping2011
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
    • Organizer
      Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011)
    • Place of Presentation
      San Juan(プエルトリコ)(招待講演)
    • Year and Date
      2011-12-21
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE2011
    • Author(s)
      H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      30th Electronic Materials Symposium (EMS30)
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県)
    • Year and Date
      2011-07-01
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Proposal of Thick InGaN Film Growth Using Advanced Droplet Elimination Process by Radical-Beam Irradiation2011
    • Author(s)
      T.Yamaguchi, N.Uematsu, R.Iwamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
    • Place of Presentation
      グラスゴー(スコットランド)
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Growths of InN/InGaN Periodic Structure and Thick InGaN Film Using Droplet Elimination Process by Radical-Beam Irradiation2011
    • Author(s)
      T.Yamaguchi, T.Araki, T.Honda, E.Yoon, Y.Nanishi
    • Organizer
      28th North American Molecular Beam Epitaxy Conference (NAMBE2011)
    • Place of Presentation
      サンディエゴ(アメリカ)
    • Year and Date
      2011-08-16
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
    • Author(s)
      T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya Institute of Technology, Aichi Japan
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
    • Author(s)
      T.Yamaguchi, H.Umeda, T Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
    • Author(s)
      上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Evidence of Rectification in InN pn Junctions2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Evidence of Rectification in InN pn Junctions2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010
    • Author(s)
      山下修平、山口智広、荒木努、名西〓之
    • Organizer
      平成22年 電気関係学会関西連合大会
    • Place of Presentation
      立命館大学キャンパス滋賀県草津市
    • Year and Date
      2010-11-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
    • Author(s)
      勝木拓郎、福本英太、山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
    • Author(s)
      木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Free Hole Concentration and Mobility in InN : Mg2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
    • Author(s)
      上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証2010
    • Author(s)
      櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学神奈川県厚本市
    • Year and Date
      2010-03-24
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
    • Author(s)
      三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu symbol tower, Kagawa Japan
    • Year and Date
      2010-06-01
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
    • Author(s)
      名西〓之、山口智広、王科、荒木努、Euijoon Yoon
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学伊都キャンパス福岡県福岡市
    • Year and Date
      2010-11-27
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010
    • Author(s)
      荒木努、川島圭介、山日智広、名西〓之
    • Organizer
      2010年度電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学中之島センター大阪府大阪市
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin Germany
    • Year and Date
      2010-08-26
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials(IPRM2010)
    • Place of Presentation
      Takamatsu symbol tower, Kagawa Japan
    • Year and Date
      2010-06-01
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Electronic Materials Conference 2010 (EMC2010)2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
    • Organizer
      Electronic Materials Conference 2010 (EMC2010)
    • Place of Presentation
      Notre Dame, Indiana, USA
    • Year and Date
      2010-06-25
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
    • Author(s)
      T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG16)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-08-09
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] C面、A面、M面InNの表面化学状態の解析2010
    • Author(s)
      高木俊樹、金子昌充、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Evidence of Free Holes in Mg Doped InN2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      ISPlasma2010
    • Place of Presentation
      名古屋(日本)
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
    • Author(s)
      T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Free Hole Concentration and Mobility in InN : Mg2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W_ Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
    • Author(s)
      岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Evidence of Free Holes in Mg Doped InN2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
    • Author(s)
      T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG16)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-08-09
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications2010
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
    • Author(s)
      三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2010
    • Author(s)
      森本健大、三木彰、山口智弘、前田就彦、荒木努、名西〓之
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学神奈川県厚木市
    • Year and Date
      2010-03-24
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学三重県三重市
    • Year and Date
      2010-05-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010
    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学中之島センター大阪府大阪市
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] A面InN成長のための低温InNバッファ層最適成長条件の検討2010
    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Wet Etching Process for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Electronic Materials Conference 2010 (EMC2010)2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
    • Organizer
      Electronic Materials Conference 2010 (EMC2010)
    • Place of Presentation
      Notre Dame, Indiana, USA
    • Year and Date
      2010-06-25
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010
    • Author(s)
      山下修平、山口智広、荒木努、名西〓之
    • Organizer
      平成22年電気関係学会関西連合大会
    • Place of Presentation
      立命館大学キャンパス滋賀県草津市
    • Year and Date
      2010-11-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin Germany
    • Year and Date
      2010-08-26
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
    • Author(s)
      岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価2010
    • Author(s)
      木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E..Yoon, Y.Nanishi
    • Organizer
      ISPlasma2010
    • Place of Presentation
      名古屋(日本)
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
    • Author(s)
      T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
    • Author(s)
      坂本努、山口智広、岩本亮輔、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Mg doped InN and search for holes2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Wet Etching by KOH for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation2010
    • Author(s)
      H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      ISPlasma2010
    • Place of Presentation
      名古屋(日本)
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Evidence of Rectification in InN pn Junctions2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      タンパ(アメリカ)
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin Germany
    • Year and Date
      2010-08-26
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
    • Author(s)
      T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたInGaN成長と組成制御への試み2010
    • Author(s)
      岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation2010
    • Author(s)
      H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      ISPlasma2010
    • Place of Presentation
      名古屋(日本)
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
    • Author(s)
      名西〓之、山口智広、王科、荒木努、Euijoon Yoon
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学伊都キャンパス福岡県福岡市
    • Year and Date
      2010-11-27
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Mg doped InN and search for holes2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] A面InN成長のための低温InNバッファ層最適成長条件の検討2010
    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Mg doped InN and search for holes2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010
    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学中之島センター大阪府大阪市
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010
    • Author(s)
      山下修平、山口智広、荒木努、名西〓之
    • Organizer
      平成22年 電気関係学会関西連合大会
    • Place of Presentation
      立命館大学キャンパス滋賀県草津市
    • Year and Date
      2010-11-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Wet Etching Process for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Wet Etching by KOH for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
    • Author(s)
      坂本努、山口智広、岩本亮輔、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Wet Etching Process for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
    • Author(s)
      T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010
    • Author(s)
      名西〓之、山口智広、王科、荒木努、Euijoon Yoon
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学伊都キャンパス福岡県福岡市
    • Year and Date
      2010-11-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010
    • Author(s)
      坂本努、山口智広、岩本亮輔、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
    • Author(s)
      勝木拓郎、福本英太、山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学三重県三重市
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] LiAlO_2(100)板上M面InN低温バッファ層利用に向けたM面GaN下地層の有効性2010
    • Author(s)
      香川和明、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
    • Author(s)
      T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Electronic Materials Conference 2010 (EMC2010)2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
    • Organizer
      Electronic Materials Conference 2010 (EMC2010)
    • Place of Presentation
      Notre Dame, Indiana, USA
    • Year and Date
      2010-06-25
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu symbol tower, Kagawa Japan
    • Year and Date
      2010-06-01
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Free Hole Concentration and Mobility in InN : Mg2010
    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010
    • Author(s)
      勝木拓郎、福本英太、山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
    • Author(s)
      T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG16)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-08-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法InGaN成長を用いた厚膜化への試み2010
    • Author(s)
      上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010
    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] LiA1O_2(100)基板上M面InN低温バッファ層利用に向けたM面GaN下地層の有効性2010
    • Author(s)
      香川和明、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] C面、A面、M面InNの表面化学状態の解析2010
    • Author(s)
      高木俊樹、金子昌充、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      タンパ(アメリカ)(基調講演)
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010
    • Author(s)
      三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface2010
    • Author(s)
      王科、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Evidence of Free Holes in Mg Doped InN2010
    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Wet Etching by KOH for InN Device Fabrication2010
    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EM529)
    • Place of Presentation
      ラフォーレ修善寺静岡県伊豆市
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface2010
    • Author(s)
      王科、山口智広、荒木努、名西〓之
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth and Characterization of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      Y. Nanishi, T. Araki
    • Organizer
      PDI Topical workshop on MBE-grown Nitride Nanowires
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-03-05
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAlO2 with C-Plane Phase Inclusion2009
    • Author(s)
      T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS 2009)
    • Place of Presentation
      チェジュ(韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
    • Author(s)
      K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS 2009)
    • Place of Presentation
      チェジュ(韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] V/III Ratiodependence on M-Plane InN Growth on LiAlO2(100) Substrates by RF-MBE2009
    • Author(s)
      K.Kagawa, Y.Takagi, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] LiAlO_2基板上C面混在M面InN薄膜の構造評価2009
    • Author(s)
      荒木努、野沢浩一、高木悠介、武藤大祐、山口智広、名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAIO2 with C-Plane Phase Inclusion2009
    • Author(s)
      T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS 2009)
    • Place of Presentation
      チェジュ(韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法によるr面(10-12)Sapphire 基板上InNの結晶成長2009
    • Author(s)
      川島圭介、山口智広、荒木努、名西〓之
    • Organizer
      平成21年電気関係学会関西支部連合大会
    • Place of Presentation
      大阪大学(吹田市)
    • Year and Date
      2009-11-07
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
    • Author(s)
      荒木努、山口智広、金子昌充、名西〓之
    • Organizer
      2009年度電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学(徳島市)
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth and Characterization of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      Y. Nanishi, T. Araki
    • Organizer
      PDI Topical workshop on MBE-grown Nitride Nanowires
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-03-05
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] 低温InNバッファ層を用いた高品質A面(11-20)InNの結晶成長2009
    • Author(s)
      川島圭介、山口智広、武藤大祐、荒木努、名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] InNへのMgドーピングにおける成長条件依存性2009
    • Author(s)
      岩本亮輔、山口智広、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Organizer
      SPIE International Symposium on Integrated Optoelectronic Devices 2009
    • Place of Presentation
      San Jose Convention Center(San Jose, USA)
    • Year and Date
      2009-01-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] DERI法により作製されたInNの光反射率その場観察2009
    • Author(s)
      王科、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] AlN/InNへテロ構造の作製と評価2009
    • Author(s)
      奥村昌平、山口智広、武藤大祐、荒木努、名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] MBE法によるGaN加工基板上配列制御InNナノコラムの作製2009
    • Author(s)
      片岡佳大、田宮秀敏、山口智広、三宅秀人、平松和政、荒木努、名西〓之
    • Organizer
      第1回窒化物半導体結晶成長講演会(Post-ISGN2)
    • Place of Presentation
      東京農工大学(小金井市)
    • Year and Date
      2009-05-16
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Organizer
      SPIE International Symposium on Integrated Optoelectronic Devices 2009
    • Place of Presentation
      San Jose Convention Center (San Jose, USA)
    • Year and Date
      2009-01-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法により作製されたInNの光反射率その場観察2009
    • Author(s)
      王科、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE InN成長におけるDERI法の有用性2009
    • Author(s)
      山口智広、王科、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Al簿膜堆積によるC面InNの表面改質効果2009
    • Author(s)
      高木俊樹、金子昌充、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE2009
    • Author(s)
      T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
    • Organizer
      The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] カソードルミネッセンス法によるr面サファイア基板上InN薄膜の光学的評価2009
    • Author(s)
      武田彰史、川島圭介、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
    • Author(s)
      山口智広、荒木努、王科、岩本亮輔、名西やすし
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
    • Organizer
      第1回窒化物半導体結晶成長講演会(Post-ISGN2)
    • Place of Presentation
      東京農工大学(小金井市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] DERI法を用いたInN/InGaN量子井戸構造の作製2009
    • Author(s)
      梅田英知、山口智広、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE InN成長におけるDERI法の有用性2009
    • Author(s)
      山口智広、王科、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
    • Author(s)
      T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Structural Characterization of M-Plane InN Grown on LiAIO2 Substrate with C-Plane Phase Inclusion2009
    • Author(s)
      T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたInN/InGaN量子井戸構造の作製2009
    • Author(s)
      梅田英知、山口智広、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Mg Doping of In-Rich InGaN Grown by RF-MBE2009
    • Author(s)
      E.Fukumoto, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法を用いたメタルリッチ条件下でのInGaN成長2009
    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films2009
    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] カソードルミネッセンス法によるr面サファイア基板上InN薄膜の光学的評価2009
    • Author(s)
      武田彰史、川島圭介、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films2009
    • Author(s)
      王科, 山口智広, 荒木努, 名西〓之
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] 低温InNバッファ層を用いた高品質A面(11-20)InNの結晶成長2009
    • Author(s)
      川島圭介, 山口智広, 武藤大祐, 荒木努, 名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Structural Characterization of M-Plane InN Grown on LiAlO2 Substrate with C-Plane Phase Inclusion2009
    • Author(s)
      T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] InNナノウォールの作製と評価2009
    • Author(s)
      片岡佳大、岩本亮輔、山口智広、三宅秀人、平松和政、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
    • Author(s)
      K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Conference on Nitride Semiconductors(ICNS 2009)
    • Place of Presentation
      チェジュ(韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] LiAlO_2基板上C面混在M面InN薄膜の構造評価2009
    • Author(s)
      荒木努, 野沢浩一, 高木悠介, 武藤大祐, 山口智広, 名西〓之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE2009
    • Author(s)
      山口智広, 荒木努, 名西〓之
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法によるr面(10-12)Sapphire基板上InNの結晶成長2009
    • Author(s)
      川島圭介、山口智広、荒木努、名西〓之
    • Organizer
      平成21年電気関係学会関西支部連合大会
    • Place of Presentation
      大阪大学(吹田市)
    • Year and Date
      2009-11-07
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNへのMgドーピングにおける成長条件依存性2009
    • Author(s)
      岩本亮輔、山口智広、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について-2009
    • Author(s)
      荒木努、山口智広、金子昌充、名西〓之
    • Organizer
      2009年度 電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学(徳島市)
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
    • Author(s)
      T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] InNナノウォールの作製と評価2009
    • Author(s)
      片岡佳大、岩本亮輔、山口智広、三宅秀人、平松和政、荒木努、名西〓之
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Mg Doping of In-Rich InGaN Grown by RF-MBE2009
    • Author(s)
      福本英太, 山口智広, 荒木努, 名西〓之
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法を用いたLiA1O_2(100)基板上へのInNの結晶成長2009
    • Author(s)
      香川和明、高木悠介、山口智広、荒木努、名西〓之
    • Organizer
      平成21年電気関係学会関西支部連合大会
    • Place of Presentation
      大阪大学(吹田市)
    • Year and Date
      2009-11-07
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] RF-MBE法を用いたLiAlO_2(100)基板上へのInNの結晶成長2009
    • Author(s)
      香川和明、高木悠介、山口智広、荒木努、名西〓之
    • Organizer
      平成21年電気関係学会関西支部連合大会
    • Place of Presentation
      大阪大学(吹田市)
    • Year and Date
      2009-11-07
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
    • Organizer
      The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
    • Organizer
      第1回窒化物半導体結晶成長講演会(POSt-ISGN2)
    • Place of Presentation
      東京農工大学(小金井市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] AlN/InNヘテロ構造の作製と評価2009
    • Author(s)
      奥村昌平、山口智広、武藤大祐、荒木努、名西やす之
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] A1薄膜堆積によるC面InNの表面改質効果2009
    • Author(s)
      高木俊樹、金子昌充、山口智広、荒木努、名西〓之
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山市)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21246004

  • [Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価2009
    • Author(s)
      山口智広、荒木努、王科、岩本亮輔、名西やすし
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学(名古屋市)
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] V/III Ratiodependence on M-Plane InN Growth on LiAlO2(100)Substrates by RF-MBE2009
    • Author(s)
      香川和明, 高木悠介, 山口智広, 荒木努, 名西〓之
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      ラフォーレ琵琶湖(守山市)
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] MBE法によるGaN加工基板上配列制御InNナノコラムの作製2009
    • Author(s)
      片岡佳大、田宮秀敏、山口智広、三宅秀人、平松和政、荒木努、名西〓之
    • Organizer
      第1回窒化物半導体結晶成長講演会(Post-ISGN2)
    • Place of Presentation
      東京農工大学(小金井市)
    • Year and Date
      2009-05-16
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE2008
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Organizer
      The Second International Symposium on Growth of III-Nitrides (ISGN-2)
    • Place of Presentation
      Laforet Shuzenji(静岡県)
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
    • Author(s)
      Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux, Switzerland
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] X線光電子分光法によるMgドープInNの表面評価2008
    • Author(s)
      緩利友晶紀、野田光彦、武藤大祐、山口智広、金子昌充、荒木努、名西〓之
    • Organizer
      2008年(平成20年)春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] 低速陽電子ビームを用いたMgドープInNの点欠陥の検出2008
    • Author(s)
      成田幸輝、伊東健一、中森寛人、本多典宏、上殿明良、武藤大祐、荒木努、名西〓之、石橋章司
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited), International Conference on Optical2008
    • Author(s)
      Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
    • Organizer
      Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
    • Place of Presentation
      Edmonton, Canada
    • Year and Date
      2008-07-23
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] TEMを用いたN極性MgドープInNの極微構造評価2008
    • Author(s)
      野沢浩一、春井聡、武藤大祐、山口智広、荒木努、名西〓之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法を用いたLiAlO_2基板上無極性M面InNの結晶成長および構造評価2008
    • Author(s)
      高木悠介、野沢浩一、山口智広、荒木努、名西〓之
    • Organizer
      電子情報通信学会
    • Place of Presentation
      名古屋工業大学(名古屋市)
    • Year and Date
      2008-11-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited)2008
    • Author(s)
      Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
    • Organizer
      International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA 08)
    • Place of Presentation
      University of ALBERTA (EDMONTON, CANADA)
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth and structura investigation of high-In-com Position InGaN/GaN Nanostructure2008
    • Author(s)
      T.Yamaguchi, A.Pretorius, A.Rosenauer, D.Hommel, T.Araki, and Y.Nanishi
    • Organizer
      Workshop on Frontie Photonic and Electronic Materials and Devices-2008 JaPanese-German-SPanishpoint Workshop-
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-05
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価2008
    • Author(s)
      菊池将悟, 佐藤丈, 檜木啓宏, 山口智広, 前田就彦, 荒木努, 名西〓之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] LiAIO_2(100)基板上MgドープM面(10-10)lnNの結晶成長2008
    • Author(s)
      高木悠介, 武藤大祐, 山口智広, 荒木努, 名西〓之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2008
    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux Convention Center (Switzeland)
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE2008
    • Author(s)
      H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux Convention Center (Switzerland)
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] InN MISダイオードの順方向電気的特性2008
    • Author(s)
      佐藤 丈、檜木 啓宏、武藤 大祐、前田 就彦、荒木 努、名西 憾之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Novel InN growth method under In-rich condition on GaN/Al2O3(0001) templates2008
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux Convention Center (Switzerland)
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Pattemed GaN Template2008
    • Author(s)
      T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
    • Organizer
      27th Electronic Materials Symposium (EMS27)
    • Place of Presentation
      ラフォーレ修善寺(静岡県伊豆市)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
    • Organizer
      The Second International Symposium on Growth of III-Nitrides (ISGN-2)
    • Place of Presentation
      Laforet Shuzenji(静岡県)
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法を用いた高In組成In GaNに対するMg dopingの検討2008
    • Author(s)
      福本英太、澤田慎也、武藤大祐、山口智広、荒木努、名西〓之
    • Organizer
      第38回結晶成長国内会議(NCCG-38)
    • Place of Presentation
      仙台市戦災復興記念館(仙台市)
    • Year and Date
      2008-11-05
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD2008
    • Author(s)
      D. Muto, T. Yamaguchi, S. Sawada, T. Araki, and Y. Nanishi
    • Organizer
      2008Electronic Materials Conference
    • Place of Presentation
      University of California (Santa Barbara, USA)
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2008
    • Author(s)
      Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux Convention Center (Switzerland)
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] CTLM法によるInNオーミックコンタクト抵抗の評価2008
    • Author(s)
      菊池将悟、佐藤丈、檜木啓宏、山口智広、前田就彦、荒木努、名西やす之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD2008
    • Author(s)
      D. Muto, T. Yamaeuchi, S. Sawada, T. Araki, Y. Nanishi
    • Organizer
      2008Electronic Materials Conference
    • Place of Presentation
      University of California (Santa Barbara, USA)
    • Year and Date
      2008-06-26
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] GaN/InN界面におけるInとGaのインターミキシング2008
    • Author(s)
      武藤 大祐、山口 智広、澤田 慎也、荒木 努、名西 憾之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications2008
    • Author(s)
      Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
    • Organizer
      International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
    • Place of Presentation
      Edmonton, Canada
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
    • Author(s)
      T. Yamaguchi, D. Muto, T. Araki, Y. Nanishi
    • Organizer
      The Second International Symposium on Growth of III-Nitrides (ISGN-2)
    • Place of Presentation
      Laforet Shuzenji (Japan)
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] M面(10-10)InN結晶成長および電気的特性の評価2008
    • Author(s)
      高木悠介、野田光彦、武藤大祐、山口智広、荒木努、名西〓之
    • Organizer
      2008年(平成20年)春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] X線光電子分光法によるMgドープInNの表面評価2008
    • Author(s)
      緩利 友晶紀、野田 光彦、武藤 大祐、山口 智広、金子 昌充、荒木 努、名西 憾之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Recent Progress of InN and In GaN Growth for Device Applications (Invited)2008
    • Author(s)
      Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] A面(11-20) InNに対するMgドーピングの効果2008
    • Author(s)
      野田光彦、武藤大祐、山口智広、荒木努、名西〓之
    • Organizer
      2008年(平成20年)春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures2008
    • Author(s)
      S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki, and Y. Nanishi
    • Organizer
      27th Electronic Materials Symposium (EMS27)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] GaN/InNヘテロ構造の成長と評価2008
    • Author(s)
      武藤大祐, 山口智広, 荒木努, 名西〓之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-04
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] LiAlO_2(100)基板上MgドープM面(10-10)InNの結晶成長2008
    • Author(s)
      高木悠介、武藤大祐、山口智広、荒木努、名西〓之
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] M面(10-10) InN結晶成長および電気的特性の評価2008
    • Author(s)
      高木 悠介、野田 光彦、武藤 大祐、山口 智広、荒木 努、名西 憾之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures2008
    • Author(s)
      S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki Y. Nanishi
    • Organizer
      27th Electronic Materials Symposium (EMS27)
    • Place of Presentation
      ラフォーレ修善寺(静岡県伊豆市)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] TEMを用いたN極性MgドープInNの極微構造評価2008
    • Author(s)
      野沢 浩一、春井 聡、武藤 大祐、山口 智広、荒木 努、名西 憾之
    • Organizer
      2008年(平成20年)春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-18206003

  • [Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
    • Author(s)
      Y.Nanishi, T.Araki, T.Yamaguchi, D.Muto
    • Organizer
      International Workshop on Nitride semiconductors (IWN2008)
    • Place of Presentation
      モントルー(スイス)(招待講演)
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法によるR面(10-12)Sapphire基板上、半極性面InNの結晶成長2008
    • Author(s)
      中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
    • Organizer
      電気関係学会関西支部連合大会
    • Place of Presentation
      京都工芸繊維大学
    • Year and Date
      2008-11-09
    • Data Source
      KAKENHI-PLANNED-18069012

  • [Presentation] RF-MBE法を用いたLiAlO_2基板上無極性M面InNの結晶成長および構造評価2008
    • Author(s)
      高木悠介, 野沢浩一, 山口智広, 荒木努, 名西〓之
    • Organizer
      電子情報通信学会
    • Place of Presentation
      名古屋工業大学(名古屋市)
    • Year and Date
      2008-11-27
    • Data Source
      KAKENHI-PROJECT-18206003
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