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IMAI Shigeru
今井 茂
Connect your ORCID iD
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Alternative Names
IMAI Sigeru 今井 茂
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Researcher Number
40223309
Other IDs
Affiliation (Current)
2022: 立命館大学, 理工学部, 教授
Affiliation (based on the past Project Information)
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2002 – 2004: 立命館大学, 理工学部, 教授
2001: 立命館大学, 理工学部, 助教授
1996 – 1998: 立命館大学, 理工学部, 助教授
1992 – 1995: 東京工業大学, 工学部, 助手
1994: 東京工業大学, 工学部電子物理工学科, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Applied materials science/Crystal engineering
/
電子材料工学
/
電子機器工学
/
Electronic materials/Electric materials
Keywords
Principal Investigator
ゲルマニウム / 原子層エピタキシ- / シリコン / 原子層エッチング / ヘテロ界面 / 単原子層超格子 / 塩素 / 極短周期超格子 / アルミニウム / 原子層堆積法
…
More
/ ジメチルアルミニウムハイドライド / ジメチルアルミニウムハイライド / 原子状水素 / 原子層堆積 / Aluminium / atomic layer deposition / dimethylaluminiumhydride
…
More
Except Principal Investigator
シリコン / ゲルマニウム / Silicon / Germanium / Si / 原子層成長 / 原子状水素 / Atomic Layr Epitaxy / Atomic Hydrogen / Ge人工結晶 / ヘテロ接合 / ALE / RF-MBE / HFET / InN / InGaN / オージェ光電子分光 / ヘテロ界面 / 原子層エッチング / 偏析 / ヘテロ成長 / ジクロロシラン / ジエチルゲルマン / Hetero Epitaxy / 発光 / 電子構造 / 強束縛近似 / エキシマレーザ / レーザ結晶化 / 多結晶シリコン / 発光特性 / 溶融再結晶化法 / 発光デバイス / Light Emission / Electronic Structure / Tight Binding sps^* Model / Ge manmade Crystal / 原子層エピタキシ- / AES / 原子層エピロキシ- / 人工結晶 / 超格子 / Hetero Structure / Manmade Crystal / Hetero Interface / 窒化インジウム / 窒化インジウムガリウム / バンドギャップ / ヘテロ構造 / 量子井戸 / 結晶成長 / 臨界膜厚 / InAlN / 量子井戸構造 / 貫通転位 / バンドギャツプ / 極性 / Si基板 / AlNバッファ / モンテカルロシミュレーション / 最大ドリフト速度 / 窒化 / 低温中間層 / AlGaN / GaN / 二次元電子ガス / Full Band Monte Carlo Simulation / bandqap / heterostructure / quantum well / crystal growth
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Research Projects
(
9
results)
Co-Researchers
(
11
People)
Project Start Year (Newest)
Project Start Year (Oldest)
Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET
Principal Investigator
NANISHI Yasushi
Project Period (FY)
2001 – 2004
Research Category
Grant-in-Aid for Scientific Research (B)
Research Field
Electronic materials/Electric materials
Research Institution
Ritsumeikan University
Atomic layer deposition of Aluminium
Principal Investigator
Principal Investigator
IWAI Shigeru
Project Period (FY)
1997 – 1998
Research Category
Grant-in-Aid for Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Ritsumeikan University
界面ゆらぎを完全に除去したIV族半導体の極短周期超格子の作製
Principal Investigator
Principal Investigator
今井 茂
Project Period (FY)
1996
Research Category
Grant-in-Aid for Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Ritsumeikan University
IV族半導体の単原子層超格子の作製
Principal Investigator
Principal Investigator
今井 茂
Project Period (FY)
1995
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Tokyo Institute of Technology
Preparation and Characterization of Si-based Manmade Crystals
Principal Investigator
MATSUMURA Masakiyo
Project Period (FY)
1995 – 1997
Research Category
Grant-in-Aid for Scientific Research (A)
Research Field
Applied materials science/Crystal engineering
Research Institution
Tokyo Institute of Technology
深さ方向分解能の高いオージェ電子分光法によるSi/Geヘテロ界面の評価
Principal Investigator
UCHIDA Sasutaka
Project Period (FY)
1994
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Applied materials science/Crystal engineering
Research Institution
Teikyo University of Science & Technology
1原子寸法オーダーで急峻なシリコン/ゲルマニウムヘテロ界面の形成法に関する研究
Principal Investigator
Principal Investigator
今井 茂
Project Period (FY)
1994
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
Electronic materials/Electric materials
Research Institution
Tokyo Institute of Technology
Atomic-Layr-Epitaxy of Group VI Semiconductors Using Ultra-Activ Gas
Principal Investigator
MATSUMURA Masakiyo
Project Period (FY)
1992 – 1993
Research Category
Grant-in-Aid for General Scientific Research (B)
Research Field
電子材料工学
Research Institution
Tokyo Institute of Technology
Research of High-Efficiency Silicon-Based Light-Emitting Devices
Principal Investigator
MATSUMURA Masakiyo
Project Period (FY)
1992 – 1994
Research Category
Grant-in-Aid for Developmental Scientific Research (B)
Research Field
電子機器工学
Research Institution
Tokyo Institute of Technology
# of Projects (Dsc)
# of Projects (Asc)
1.
UCHIDA Sasutaka
(80134823)
# of Collaborated Projects:
5 results
# of Collaborated Products:
0 results
2.
MATSUMURA Masakiyo
(30110729)
# of Collaborated Projects:
5 results
# of Collaborated Products:
0 results
3.
SUGIURA Osamu
(10187643)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
4.
SUGAHARA Satoshi
(40282842)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
5.
NANISHI Yasushi
(40268157)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
6.
TAKAKURA Hideyuki
(30112022)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
7.
ARAKI Tsutomu
(20312126)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
8.
SUZUKI Akira
(10111931)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
9.
HARIMA Hiroshi
(00107351)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
10.
寺口 信明
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
11.
鈴木 章
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
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