SUZUKI Akira 鈴木彰

Researcher Number	10111931
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2004 – 2009: RITSUMEIKAN UNIVERSITY, RESEARCH ORGANIZATION OF SCIENCE & ENGINEERING, PROFESSOR, 総合理工学研究機構, 教授 2003: 総合理工学研究機構, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 窒化アルミニウム / ガドリニウム / 希土類 / 紫外発光 / ワイドギャップ半導体 / 内殻遷移 / スパッタ法 / 結晶薄膜 / MBE成長法 / スパッタ製膜法 … More Except Principal Investigator … More RF-MBE / HFET / InN / InGaN / 窒化インジウム / 窒化インジウムガリウム / バンドギャップ / ヘテロ構造 / 量子井戸 / 結晶成長 / 臨界膜厚 / InAlN / 量子井戸構造 / 貫通転位 / バンドギャツプ / 極性 / Si基板 / AlNバッファ / ヘテロ接合 / モンテカルロシミュレーション / 最大ドリフト速度 / 窒化 / 低温中間層 / AlGaN / GaN / 二次元電子ガス / Full Band Monte Carlo Simulation / bandqap / heterostructure / quantum well / crystal growth Less

Fabrication of a novel ultra-violet light-emitting device using gadolinium-doped aluminum nitridePrincipal Investigator
- Principal Investigator
  
  SUZUKI Akira
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ritsumeikan University
新規紫外光発光材料ガドリニウム添加窒化アルミニウムの作製Principal Investigator
- Principal Investigator
  
  鈴木彰
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ritsumeikan University
Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ritsumeikan University

All 2010 2009 2007 2006 2004 2003 2002

All Journal Article Patent

[Journal Article] Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+2010
- Author(s)
  K. Fukui, S. Sawai, T. Ito, S. Emura, T. Araki, A. Suzuki
- Journal Title
  
  Physica Status Solidi (c) (掲載予定)
- NAID
  120002851451
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360148
[Journal Article] Ferromagnetism and luminescence of diluted magnetic semiconductors GaGdN and AlGdN2009
- Author(s)
  S. Emura, M. Takahashi, H. Tambo, A. Suzuki, T. Nakamura, Y. Zhou, S. Hasegawa, H. Asahi
- Journal Title
  
  Materials Research Society Symposium Proceedings 1111
  
  Pages: 49-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360148
[Journal Article] スパッタ法で作製したGd添加AIN膜の紫外発光特性2007
- Author(s)
  廣村友紀, 小坂賢一, 宮原学, 荒木努, 名西〓之, 江村修一, 鈴木彰
- Journal Title
  
  第54回応用物理学関係連合講演会講演予稿集 No. 1
  
  Pages: 387-387
- Data Source
  KAKENHI-PROJECT-17656110
[Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004
- Author(s)
  Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki, H.Naoi, A.Suzuki, H.Harima, T.Miyajima
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. 798
  
  Pages: 189-200
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004
- Author(s)
  Y.Nanishi, Y.Saito, T.Yamaguchi, F.Matsuda, T.Araki, H.Naoi, A.Suzuki, H.Harima, T.Miyajima
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. 789
  
  Pages: 189-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] The effect of substrate polarity on the growth of InN by RF-MBE2004
- Author(s)
  H.Naoi, F.Matsuda, T.Araki, A.Suzuki, Y.Nanishi
- Journal Title
  
  J.Cryst.Growth 269
  
  Pages: 155-161
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] Growth and properties of In-rich InGaN films grown on (0001) supphire by RF-MBE2004
- Author(s)
  M.Kurouchi, T.Araki, H.Naoi, T.Yamaguchi, A.Suzuki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(b) 241
  
  Pages: 2843-2848
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] MBE-Growth, Characterization and Properties of InN and InGaN2003
- Author(s)
  Y.Nanishi, Y.Saito, T.Yamaguchi, M.Hori, F.Matsuda, T.Araki, A.Suzuki, T.Miyajima
- Journal Title
  
  phys.stat.sol.(a) 200
  
  Pages: 202-208
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE2002
- Author(s)
  Y.Saito, H.Harima, E.Kurimoto, T.Yamaguchi, N.Teraguchi, A.Suzuki, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(b) 234
  
  Pages: 796-800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450131
[Journal Article] Optical properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE2002
- Author(s)
  M.Hori, K.Kano, T.Yamaguchi, Y.Saito, T.Araki, Y.Nanishi, N.Teraguchi, A.Suzuki
- Journal Title
  
  phys.stat.sol.(b) 234
  
  Pages: 750-754
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450131
[Patent] 窒化物材料製造方法2006
- Inventor(s)
  鈴木彰
- Industrial Property Rights Holder
  学校法人立命館
- Industrial Property Number
  2006-287160
- Filing Date
  2006-10-23
- Data Source
  KAKENHI-PROJECT-17656110

1. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 3 results

# of Collaborated Products: 9 results
2. EMURA Shuichi (90127192)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
3. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SONODA Saki (30397690)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. FUKUI Kazutoshi (80156752)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. NANISHI Yasushi (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
7. TAKAKURA Hideyuki (30112022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. IMAI Shigeru (40223309)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. HARIMA Hiroshi (00107351)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
10. 寺口信明

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 鈴木章

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SUZUKI Akira 鈴木 彰

Research Projects

Research Products

Co-Researchers

Fabrication of a novel ultra-violet light-emitting device using gadolinium-doped aluminum nitridePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

新規紫外光発光材料ガドリニウム添加窒化アルミニウムの作製Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Ferromagnetism and luminescence of diluted magnetic semiconductors GaGdN and AlGdN2009

Author(s)

Journal Title

Data Source

[Journal Article] スパッタ法で作製したGd添加AIN膜の紫外発光特性2007

Author(s)

Journal Title

Data Source

[Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004

Author(s)

Journal Title

Data Source

[Journal Article] Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] The effect of substrate polarity on the growth of InN by RF-MBE2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Growth and properties of In-rich InGaN films grown on (0001) supphire by RF-MBE2004

Author(s)

Journal Title

Data Source

[Journal Article] MBE-Growth, Characterization and Properties of InN and InGaN2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Optical properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE2002

Author(s)

Journal Title

Description

Data Source

[Patent] 窒化物材料製造方法2006

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

SUZUKI Akira 鈴木彰