KUROSE NORIKO 黒瀬範子

… Alternative Names

Researcher Number	50520540
Other IDs
Affiliation (Current)	2021: 国立研究開発法人国立精神・神経医療研究センター, 神経研究所疾病研究第七部, リサーチフェロー
Affiliation (based on the past Project Information) *help	2016 – 2018: 立命館大学, 総合科学技術研究機構, プロジェクト研究員 2015: 立命館大学, 総合科学技術研究機構, 専門研究員 2014 – 2015: 立命館大学, 総合科学技術研究機構, 研究員
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator 縦型パワーFET / AlGaN縦型 / 導電性AlNバッファーレイヤー / レーザによるｐ型化 / オーミックコンタクト / 縦型AlGaNショットキーデバイス / 自然形成ビアホール / レーザーによるオーミックコンタクト形成 / Si基板上縦型デバイス / ＡｌＧａＮ … More Except Principal Investigator 深紫外発光素子 / MIPE / 大面積発光素子 / 高出力発光素子 / Si基板 / LED / マイクロプラズマ / AlGaN / プラズマ励起 / 深紫外光源 / 大面積 / 波長可変 / 紫外線殺菌 / 紫外線分解 / 窒化物半導体 / 結晶成長 / 結晶欠陥 / 深紫外 / センサー / ダイオード / トランジスタ / 格子欠陥 / デバイス / エピタキシャル / 先端機能デバイス / オーミック電極 / 保護膜 Less

Development of vertical AlGaN high power FET on Si substrate using spontaneous via holesPrincipal Investigator
- Principal Investigator
  
  黒瀬範子
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University
Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substrate
- Principal Investigator
  
  IWATA NAOTAKA
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute
Dynamic micro-plasma excited AlGaN high power DUV light emitter operated at around 10W class power
- Principal Investigator
  
  Aoyagi Yoshinobu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University

All 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation Patent

[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018
- Author(s)
  Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
- Journal Title
  
  AIP Advances
  
  Volume: 8 Pages: 015329-015329
- DOI
  10.1063/1.5009970
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H03998
[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018
- Author(s)
  Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
- Journal Title
  
  AIP ADVANCES
  
  Volume: ８
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H04357
[Journal Article] マイクロプラズマ励起深紫外発光素子の開発と深紫外線の医療応用2015
- Author(s)
  黒瀬範子、青柳克信
- Journal Title
  
  レーザー学会誌
  
  Volume: ４3 Pages: 677-682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249053
[Journal Article] Development of High Power, Large Area, Deep Ultraviolet Light Emitting Device using Dynamic Micro-plasma Excitation of AlGaN Multi-quantum Wells (MIPE)2014
- Author(s)
  黒瀬範子、青柳克信
- Journal Title
  
  IEEJ Trans. FM
  
  Volume: 134 (5) Issue: 5 Pages: 307-314
- DOI
  10.1541/ieejfms.134.307
- NAID
  130004869362
- ISSN
  0385-4205, 1347-5533
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249053
[Journal Article] Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor2014
- Author(s)
  Noriko Kurose, Naotaka Iwata, Itaru Kamiya, Yoshinobu Aoyagi
- Journal Title
  
  AIP ADVANCES
  
  Volume: 4 Pages: 1230071-1230077
- DOI
  10.1063/1.4905135
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249053
[Journal Article] Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)2014
- Author(s)
  N. Kurose, K. Shibano, T. Araki, Y. Aoyagi
- Journal Title
  
  AIP advances
  
  Volume: 4 Pages: 02712211-6
- DOI
  10.1063/1.4867090
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249053
[Patent] ｐ型窒化ガリウム系化合物半導体を製造する方法および装置、並びに、半導体素子を製造する装置2017
- Inventor(s)
  黒瀬範子、青柳克信
- Industrial Property Rights Holder
  立命館大学
- Industrial Property Rights Type
  特許
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-16H04357
[Patent] 導電性を有する絶縁体層およびその製造方法並びに窒化物半導体素子およびその製造方法2014
- Inventor(s)
  青柳克信、黒瀬範子
- Industrial Property Rights Holder
  学校法人立命館
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-051186
- Filing Date
  2014-03-14
- Data Source
  KAKENHI-PROJECT-25249053
[Patent] 深紫外発光素子2013
- Inventor(s)
  青柳克信、黒瀬範子
- Industrial Property Rights Holder
  学校法人立命館
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-241850
- Filing Date
  2013-11-22
- Data Source
  KAKENHI-PROJECT-25249053
[Patent] 縦型発光ダイオードおよび結晶成長法2013
- Inventor(s)
  青柳克信、黒瀬範子、柴野謙太朗、荒木努
- Industrial Property Rights Holder
  学校法人立命館
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-128015
- Filing Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Laser-induced local activation of Mg-doped GaN and AlGaN for high power vertical devices2019
- Author(s)
  Noriko Kurose, Naotaka Iwata, and Itaru Kamiya
- Organizer
  SPIE Photonics West 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Laser-induced local activation of Mg-doped GaN and AlGaN for high power vertical devices2019
- Author(s)
  N.Kurose and Y. Aoyagi
- Organizer
  SPIE Photonics West 2019
- Invited
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] Realization of conductive aluminum nitride epitaxial layer on silicon substrate by forming spontaneous nano size via-holes2018
- Author(s)
  N.Kurose　and Y. Aoyagi
- Organizer
  International Conference on Advanced Materials & Nanotechnology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] レーザを用いた局所p-GaNオーミック電極形成法の開発2018
- Author(s)
  川﨑輝尚、黒瀬範子、松本晃太、岩田直高、青柳克信
- Organizer
  応用物理学会秋季学術講演会2018 シンポジウム
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017
- Author(s)
  松本滉太，黒瀬範子，岩田直高，山田郁彦，神谷格，青柳克信
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017
- Author(s)
  松本滉大、黒瀬範子、下野貴史、岩田直高、山田郁彦、神谷格、青柳克信
- Organizer
  第78回秋季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] MgドープGaNへのレーザー照射による局所活性化と結晶性のその場観測2017
- Author(s)
  松本滉太、黒瀬範子、山田郁彦、神谷格、青柳克信、岩田直高
- Organizer
  IEEE Metro Area Workshop in Nagoya
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Realization of conductive AlN buffer layer using spontaneous nano-size via-holes and its application to vertical AlGaN devices on Si substrate2016
- Author(s)
  N. Kurose
- Organizer
  Energy Materials and Nanotechnology Collaborative Conference on Crystal Growth
- Place of Presentation
  San Sebastian, Spain
- Year and Date
  2016-09-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
- Author(s)
  Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
- Organizer
  the 43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama International Conference Center(Toyama, Toyama),Japan
- Year and Date
  2016-06-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] Realization of Conductive AlN Epitaxial layer on Si substrate Using Spontaneous Nano Via Holes for Vertical AlGaN High Power FET2016
- Author(s)
  N. Kurose
- Organizer
  Compound Semiconductor Workshop
- Place of Presentation
  富山国際会議場（富山県　富山市）
- Year and Date
  2016-07-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Si基板上縦型高出力AlGaN FET実現を目指した導電性AlNバッファ層（v-AlN層）の形成2016
- Author(s)
  Noriko Kurose, Kota Ozeki, Tsutomu Araki, and Yoshinobu Aoyagi
- Organizer
  応用物理学会秋季学術講演会2016 シンポジウム
- Place of Presentation
  新潟コンベンションセンター (新潟県、新潟市）
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
- Author(s)
  Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
- Organizer
  The 43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  Toyama International Conference Center (富山県富山市)
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Formation of spontaneous nano-size via-holes to grow conductive AlN buffer layer on Si substrate for vertical AlGaN high power FET2016
- Author(s)
  Noriko Kurose and Yoshinobu Aoyagi
- Organizer
  18th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  San Diego, California, USA
- Year and Date
  2016-07-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] Fabrication of nonlinear photonic crystal and its application to UV laser2015
- Author(s)
  Y. Aoyagi, N. Kurose and S. Inoue
- Organizer
  International Display Workshop 2015
- Place of Presentation
  大津プリンスホテル（滋賀県　大津市）
- Year and Date
  2015-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] A new technique to make an insulating AlN thin film to be conductive by spontaneous via holes formed by MOCVD and its application to realize vertical UVLED on N+Si substrate2015
- Author(s)
  N. Kurose, Y. Aoyagi
- Organizer
  AVS international conference
- Place of Presentation
  SanJose, USA
- Year and Date
  2015-10-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] A New Technique to Make an Insulating AlN Thin Film to be Conductive by Spontaneous Via Holes formed by MOCVD and its Application to realize Vertical UV LED on n+Si Substrate2015
- Author(s)
  Noriko Kurose and Yoshinobu Aoyagi
- Organizer
  AVS 62nd International Symposium & Exhibition
- Place of Presentation
  San Jose Convention Center, San Jose, California, USA
- Year and Date
  2015-10-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Formation of High Conductive n-AlN using Spontaneous Via Holes and Development of Substrate-removal-free Vertical DUV LED (RefV-LED)2014
- Author(s)
  N.Kurose, Y.Aoyagi
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Atlanta, U.S.A
- Year and Date
  2014-05-20
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Novel Vertical AlGaN Deep Ultra Violet Photo-detector on n+Si Substrate using Spontaneous Via Holes Growth Technique2014
- Author(s)
  Kota Ozeki, Noriko Kurose, Naotaka Iwata*, Kentaro Shibano, Tsutomu Araki, Itaru Kamiya* and Yoshinobu Aoyagi
- Organizer
  Solid State Device and Materials
- Place of Presentation
  筑波国際会議場　（茨城県、つくば市）
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Development of new type vertical deep ultra-violet light emitting Device（RefV-LED）2014
- Author(s)
  N.Kurose, Y.Aoyagi
- Organizer
  The 21th International Display Workshops
- Place of Presentation
  朱鷺メッセ、新潟コンベンションセンター（新潟県、新潟市）
- Year and Date
  2014-12-04
- Invited
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Development of substrate-removal-free vertical deep ultraviolet light emitting diode using AlGaN semiconductors on Si(111) substrate (Ref-V-DUVLED)
- Author(s)
  N. Kurose, Y. Aoyagi, K. Shibano, T. Araki, Y. Aoyagi
- Organizer
  Material Research Society
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] n-Si基板上縦型深紫外LED　（Ref-V DUV LED)の開発（２）
- Author(s)
  柴野謙太朗、黒瀬範子、荒木努、青柳克信
- Organizer
  第61回応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス、神奈川
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Deep UV Light Emitter by Nonlinear Photonic Crystal and AlGaN Semiconductors
- Author(s)
  N. Kurose, Y. Aoyagi
- Organizer
  Laserion 2013,
- Place of Presentation
  Munich, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] マイクロプラズマ励起深紫外発光素子(MIPE)の開発と応用
- Author(s)
  黒瀬範子、青柳克信
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-25249053
[Presentation] Si上縦型深紫外LEDの開発と応用
- Author(s)
  柴野謙太朗、黒瀬範子、荒木努、青柳克信
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-25249053

1. KAMIYA Itaru (10374018)

# of Collaborated Projects: 4 results

# of Collaborated Products: 15 results
2. Aoyagi Yoshinobu (70087469)

# of Collaborated Projects: 3 results

# of Collaborated Products: 27 results
3. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 3 results

# of Collaborated Products: 8 results
4. IWATA NAOTAKA (40708939)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
5. KAMIKO Noyuki (70251345)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KUROSE NORIKO 黒瀬 範子

KUROSE Noriko 黒瀬 範子

Research Projects

Research Products

Co-Researchers

Development of vertical AlGaN high power FET on Si substrate using spontaneous via holesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substrate

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Dynamic micro-plasma excited AlGaN high power DUV light emitter operated at around 10W class power

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

Author(s)

Journal Title

Data Source

[Journal Article] マイクロプラズマ励起深紫外発光素子の開発と深紫外線の医療応用2015

Author(s)

Journal Title

Data Source

[Journal Article] Development of High Power, Large Area, Deep Ultraviolet Light Emitting Device using Dynamic Micro-plasma Excitation of AlGaN Multi-quantum Wells (MIPE)2014

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Journal Article] Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)2014

Author(s)

Journal Title

DOI

Data Source

[Patent] ｐ型窒化ガリウム系化合物半導体を製造する方法および装置、並びに、半導体素子を製造する装置2017

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 導電性を有する絶縁体層およびその製造方法並びに窒化物半導体素子およびその製造方法2014

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 深紫外発光素子2013

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 縦型発光ダイオードおよび結晶成長法2013

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

KUROSE NORIKO 黒瀬範子

KUROSE Noriko 黒瀬範子