岩田直高イワタナオタカ

Researcher Number	40708939
Affiliation *help	2015 – 2018 : 豊田工業大学, 工学(系)研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator スーパー接合 / 窒化物半導体 / 格子欠陥 / オーミック電極 / アクセプタ / レーザー照射 / GaN / エピタキシャル / 結晶成長 / パワーデバイス … More Except Principal Investigator ＡｌＮバッファ / レーザー / Ｓｉ基板 / 自然形成ビアホール / Si基板上縦型FET / ビアホール / Si基板上FET / 縦型FET / ｐ－化 / 導電性ＡｌＮバッファー層 / Si基板上縦型デバイス / 縦型電子デバイス / ＭＯＣＶＤ / ＡｌＧａＮ / 縦型ＦＥＴ / Si基板 / パワーFET / Si基板上エピ反り低減法 / AlGaN Less

Development of laser-irradiated acceptor activation technology of GaN super junction power devices for high-efficiency power systemsPrincipal InvestigatorOngoing
- Principal Investigator
  
  岩田直高
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Toyota Technological Institute
Development of vertical AlGaN high power FET on Si substrate using spontaneous via holesOngoing
- Principal Investigator
  
  黒瀬範子
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University
Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substratePrincipal InvestigatorOngoing
- Principal Investigator
  
  岩田直高
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute

All 2017 2016

All Presentation

[Presentation] HCl表面処理とプラズマ励起原子層堆積 SiNx膜による AlGaN/GaN HEMTの表面安定化2017
- Author(s)
  鈴木貴之、土屋晃祐、大保崇博、赤澤良彦、下野貴史、松本滉太、江口卓也、岩田直高
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017
- Author(s)
  松本滉太，黒瀬範子，岩田直高，山田郁彦，神谷格，青柳克信
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] プラズマ励起原子層堆積プラズマ励起原子層堆積保護膜によるAlGaN/GaN HEMTの表面安定化2016
- Author(s)
  鈴木貴之、山田富明、河合亮輔、川口翔平、張東岩、岩田直高
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ (新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03998

1. 荒木努 (20312126)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
2. 黒瀬範子 (50520540)

# of Collaborated Projects : 2results

# of Collaborated Products : 1results
3. 青柳克信 (70087469)

# of Collaborated Projects : 2results

# of Collaborated Products : 1results
4. 神谷格 (10374018)

# of Collaborated Projects : 2results

# of Collaborated Products : 1results

岩田直高イワタナオタカ

Research Projects

Research Products

Co-Researchers

Development of laser-irradiated acceptor activation technology of GaN super junction power devices for high-efficiency power systemsPrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of vertical AlGaN high power FET on Si substrate using spontaneous via holesOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substratePrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Presentation] HCl表面処理とプラズマ励起原子層堆積 SiNx膜による AlGaN/GaN HEMTの表面安定化2017

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017

Author(s)

Organizer

Data Source

[Presentation] プラズマ励起原子層堆積プラズマ励起原子層堆積保護膜によるAlGaN/GaN HEMTの表面安定化2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

岩田 直高 イワタ ナオタカ

Research Projects

Research Products

Co-Researchers

Development of laser-irradiated acceptor activation technology of GaN super junction power devices for high-efficiency power systemsPrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of vertical AlGaN high power FET on Si substrate using spontaneous via holesOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substratePrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Presentation] HCl表面処理とプラズマ励起原子層堆積 SiNx膜による AlGaN/GaN HEMTの表面安定化2017

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017

Author(s)

Organizer

Data Source

[Presentation] プラズマ励起原子層堆積プラズマ励起原子層堆積保護膜によるAlGaN/GaN HEMTの表面安定化2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

岩田直高イワタナオタカ