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Funato Mitsuru  船戸 充

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Mitsuru Funato  船戸 充

FUNATO Mitsuru  船戸 充

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Researcher Number 70240827
Other IDs
Affiliation (Current) 2022: 京都大学, 工学研究科, 准教授
Affiliation (based on the past Project Information) *help 2016 – 2021: 京都大学, 工学研究科, 准教授
2015: 京都大学, 工学(系)研究科(研究院), 准教授
2013: 京都大学, 大学院工学研究科, 准教授
2012 – 2013: 京都大学, 工学(系)研究科(研究院), 准教授
2007 – 2011: Kyoto University, 工学研究科, 准教授 … More
2008 – 2010: 京都大学, 大学院・工学研究科, 准教授
2002 – 2006: Kyoto University, Department of Electronic Science and Engineering, Instructor, 工学研究科, 講師
2001: 京都大学, 工学研究科, 助手
2000: 京大, 工学(系)研究科, 助手
1999: 京都大学, 大学院・工学研究科, 助手
1995 – 1999: 京都大学, 工学研究科, 助手
1997: 京都大学, 大学院・工学研究科, 助手
1993 – 1994: 京都大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / 表面界面物性 / Medium-sized Section 30:Applied physics and engineering and related fields
Except Principal Investigator
Science and Engineering / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electronic materials/Electric materials / Crystal engineering / Applied materials / Medium-sized Section 30:Applied physics and engineering and related fields
Keywords
Principal Investigator
異族半導体多層構造 / GaAs-ZnSe / 透過型電子顕微鏡 / GaAs / 窒化物半導体 / 結晶工学 / 結晶成長 / 三次元成長 / マイグレーション / 成長姿態 … More / ヘテロ接合ダイオード / 原子価不整合 / 半導体ヘテロ界面 / Zn(S)Se / バンド不連続量 / 硫黄原子 / ZnSe / 表面エネルギー / 半導体へテロ構造 / 不整合 / GaN / 結晶構造 / 薄膜 / 量子構造 / 緑色レーザ / 半極性結晶面 / 発光効率 / 偏光 / 厚膜InGaN / 電子材料 / 紫外光源技術 / 電気・電子材料 / 電子・電気材料 / 発光素子 / へき開性基板 / 光デバイス / InリッチInGaN / ScAlMgO4 / 可視長波長LED / 高効率化 … More
Except Principal Investigator
窒化物半導体 / 発光機構解明 / 近接場分光 / ZnCdSSe / 励起子 / 輻射再結合 / 非輻射再結合 / 発光ダイナミクス / マルチプローブ技術 / ZnO / InGaN / 多波長発光 / フォトルミネッセンス / 先進フォトセンシング / 量子ナノ構造 / 近接場光学 / プラズモニクス / GaP / MIS / ワイドギャップ半導体 / 半導体3次元構造 / 深紫外分光 / 深紫外フォトニクス / 励起子磁気光学効果 / 強磁性体薄膜 / 多層構造 / 配向特性 / AlGaN / INGaN / A1GaN / 発光マッピング / 深紫外発光 / 偏光異方性 / Modified MEE法 / 高品質エピ膜 / 半極性面 / マイクロファセット / 誘導放出 / 光デバイス / 結晶成長 / 半導体物性 / 紫外 / 赤外 / 発光デバイス / 窒化インジウム / 窒化アルミニウム / バンドギャップ / 局在発光制御 / バイオセンシング / バイオセンシング応用 / InGaNナノ構造 / 局在励起子 / 時間空間ダイナミクス / マルチプローブ分光 / 半導体ナノ構造 / 新規顕微分光応用 / 光物性 / 半導体 / ナノ構造 / 光計測 / 走査プローブ顕微鏡 / 紫外光デバイス / 分子線エピタキシ- / 量子井戸構造 / 紫外発光ダイオード / 紫外半導体レーザ / Gap / P型伝導度制御 / 量子井戸 / 原子層制御成長 / Ultraviolet Optical Devices / Moleclar Beam Epitaxy / Quantum Well / 光触媒反応 / 反応過程 / 不純物添加 / p型伝導性制御 / 量子構造 / 電流注入レーザ発振 / 反応素過程 / 欠陥制御 / 励起子発光寿命 / photocatalysis / growth processes / impurity doping / p-type control / quantum structure / current-injection lasing / 励起子分子 / 低次元構造 / 局在 / 時間分解分光 / ZnCdSe / 量子ドット / 多体効果 / 局在化 / Widegap Semiconductors / Exciton / Exciton Molecule / Low-dimensional Structures / Localization / Time-resolved spectroscopy / Luminescence Dynamics / 近接場工学 / 過渡グレーティング法 / 熱レンズ法 / 時間・空間ダイナミクス / ワイドキャップ半導体 / 時間ダイナミクス / 空間ダイナミクス / 熱レイズ法 / widegap semiconductor / exciton / radiative recombination / nonradiative recombination / transient grating spectroscopy / thermal lens spectroscopy / temporal dynamics / spatial dynamics / 超高効率発光 / 超高発光効率 / Near Field Spectroscopy / Photoluminescence / Emission Dynamics / Multi-probe Technique / Advanced Photo-sensing / GaN-based semiconductors / Quantum nano-structures / Highly Efficient Emission / 集束イオンビーム / ナノ加工 / ナノドット / MOCVD成長 / 配列制御 / 酸化亜鉛 / 励起子物性 / 光機能 / focused ion beam / nanopatterning / nanodots / MOCVD growth / artificial arrangement / zinc oxide / exciton properties / optical functions / 新機能発光デバイス / 局在光物性 / 多波長発光光源 / 3次元構造 / ナノ局在 / テーラーメイド光源 / 多波長発光制御 / ナノ局在物性 / 超ワイドギャップ半導体 / 近接場光学顕微鏡 / 顕微分光 / 特異構造 / 発光制御 / 窒化物特異構造 / 光物性評価 / 多波長発光素子 / 発光シンセサイザー / 次世代照明 / 光空間無線通信 / 発光高効率化 / InリッチInGaN / ScAlMgO4基板 / 発光ダイオード / 高効率化 Less

  • Research Projects

    (24 results)

  • Research Products

    (879 results)

  • Co-Researchers

    (28 People)

  •  Visible, long wavelength LEDs based on In-rich InGaN on ScAlMgO4 substratesPrincipal Investigator

    • Principal Investigator
      船戸 充
    • Project Period (FY)
      2021 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Kyoto University

  •  Light emitting synthesizer : aiming to create the ultimate lighting devices

    • Principal Investigator
      川上 養一
    • Project Period (FY)
      2020 – 2024
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
    • Research Institution
      Kyoto University

  •  ScAlMgO4基板上へのInリッチInGaN系LEDの実現

    • Principal Investigator
      川上 養一
    • Project Period (FY)
      2020
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Kyoto University

  •  近接場分光（SNOM）による特異構造の発光機構解明と制御

    • Principal Investigator
      川上 養一
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Kyoto University

  •  Elucidation and control of carrier recombination processes for the realization of AlGaN-based ultra-high efficiency ultraviolet light emitting devicesPrincipal Investigator

    • Principal Investigator
      Funato Mitsuru
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto University

  •  Fabrication of nitride-semiconductor-based light-emitters on a reusable substratePrincipal Investigator

    • Principal Investigator
      Mitsuru Funato
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto University

  •  Achievement of Tailor-made Lighting Sources by the Control of Nanoscopic Carrier Localization in Nitride Semiconductors

    • Principal Investigator
      Kawakami Yoichi
    • Project Period (FY)
      2015 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Crystal engineering
    • Research Institution
      Kyoto University

  •  深紫外近接場分光による超ワイドギャップ半導体の物性解明

    • Principal Investigator
      川上 養一
    • Project Period (FY)
      2015
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University

  •  Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics

    • Principal Investigator
      KAWAKAMI Yoichi
    • Project Period (FY)
      2009 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  Development of nitride-semiconductor based green laser diodes on a novel semipolar planePrincipal Investigator

    • Principal Investigator
      FUNATO Mitsuru
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto University

  •  Assessment and control of radiative/nonradiative recombination processes in In-rich InGaN and in Al-rich AlGaN

    • Principal Investigator
      KAWAKAMI Yoichi
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Kyoto University

  •  Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-

    • Principal Investigator
      NANISHI Yasushi
    • Project Period (FY)
      2006 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Ritsumeikan University

  •  Development of key technologies for the measurement of luminescence dynamics in the nano-space

    • Principal Investigator
      KAWAKAMI Yoichi
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  The assessment of emission mechanism in GaN-based nano-structures by scanning near-field optical microscopy

    • Principal Investigator
      KAWAKAMI Yoichi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto University

  •  Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines

    • Principal Investigator
      FUJITA Shizuo
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYOTO UNIVERSITY

  •  Study on nonradiative recombination mechanism in widegap semiconductors

    • Principal Investigator
      KAWAKAMI Yoichi
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYOTO UNIVERSITY

  •  表面エネルギー変調エピタキシーによる半導体不整合系へテロ構造の作製Principal Investigator

    • Principal Investigator
      船戸 充
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  半導体/強磁性体薄膜多層構造による励起子磁気光学効果の創出

    • Principal Investigator
      藤田 静雄
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules

    • Principal Investigator
      FUJITA Shigeo
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (A).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYOTO UNIVERSITY

  •  原子価不整合系半導体ヘテロ界面の原子層レベル制御とバンド不連続量Principal Investigator

    • Principal Investigator
      船戸 充
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      表面界面物性
    • Research Institution
      Kyoto University

  •  Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions

    • Principal Investigator
      FUJITA Shigeo
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYOTO UNIVERSITY

  •  異族半導体多層構造の作製と界面物性に関する研究Principal Investigator

    • Principal Investigator
      船戸 充
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  異族半導体AlGaAs-ZnSe新人工多層構造の作製と新物性に関する研究Principal Investigator

    • Principal Investigator
      船戸 充
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University

  •  Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices

    • Principal Investigator
      FUJITA Shigeo
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYOTO UNIVERSITY

All 2021 2020 2019 2018 2017 2016 2015 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Book Patent

  • [Book] ワイドギャップ半導体－あけぼのから最前線へー　第3.3章「半極性・半極性面上新規高効率発光デバイス」pp.222-2322013
    • Author(s)
      船戸充，川上養一（分担執筆）
    • Total Pages
      11
    • Publisher
      培風館
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Book] 窒化物基板および格子整合基板の成長とデバイス特性2009
    • Author(s)
      船戸充, 川上養一
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] 窒化物基板および格子整合基板の成長とデバイス特性2009
    • Author(s)
      船戸充, 川上養一
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Ouantum Wells". Advances in Light Emitting Materials, Materials Science Forum2008
    • Author(s)
      Y. Kawakami. A. Kaneta and M. Funato(分担執筆)
    • Publisher
      Trans Tech Publications
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nontpolar Surfaces : Growth, Properties, and Devices edited by Tanya Paskova2008
    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai (分担執筆)
    • Publisher
      WILEY-VCH Verlag GmbH & Co. KGaA
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nonoolar Surfaces : Growth. Properties, and Devices edited by Tanya Paskova2008
    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai (分担執筆)
    • Publisher
      WILEY-VCH Verlag GmbH & Co. KGaA
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Book] Semipolar InGaN/GaN quantum wells for highly functional light emitters, Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova2008
    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
    • Publisher
      WILEY-VCH Verlag GmbH & Co. KGaA
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nonpolar Surfaces : Growth, Properties, and Devices edited by Tanya Paskova2008
    • Author(s)
      M. Funato, Y. Kawakami, Y. Narukawa and T. Mukai(分担執筆)
    • Publisher
      WILEY-VCH Verlag GmbH & Co. KGaA
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] Assessment and control of recombination dynamics in In_xGa_<1-x>N-based quantum wells, (Materials Sci. Forum 590)2008
    • Author(s)
      Y. Kawakami, A. Kaneta, and M. Funato
    • Publisher
      Advances in Light Emitting Materials ed. by B. Monemar
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Book] "Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells", Advances in Light Emitting Materials, Materials Science Forum Vol.5902008
    • Author(s)
      Y. Kawakami, A. Kaneta and M. Funato (分担執筆)
    • Publisher
      Trans Tech Publications
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells, Advances in Light Emitting Materials, Materials Science Forum2008
    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato
    • Publisher
      Trans Tech Publications
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Book] Nitrides with Nonpolar Surfaces : Growth, Properties, and Devices edited by T.Paskova, WILEY-VCH2008
    • Author(s)
      M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai(分担執筆)
    • Publisher
      Semipolar InGaN/GaN quantum wells for highly functional light emitters
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] Materials Science Forum 590, Trans Tech Publications2008
    • Author(s)
      Y.Kawakami, A.Kaneta, M.Funato(分担執筆)
    • Publisher
      Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells Advances in Light Emitting Materials
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Ouantum Wells". Advances in Light Emitting Materials. Materials Science Forum2008
    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato (分担執筆)
    • Publisher
      Trans Tech Publications
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Quantum Wells". Advances in Light Emitting Materials Materials Science Forum2008
    • Author(s)
      Y. Kawakami, A. Kaneta, M. Funato (分担執筆)
    • Publisher
      Trans Tech Publications
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Book] Semipolar InGaN/GaN quantum wells for highly functional light emitters2008
    • Author(s)
      M. Funato, Y. Kawakami Y. Narukawa and T. Mukai(分担執筆)
    • Publisher
      Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova,WILEY-VCH Verlag GmbH &amp ; Co. KGaA
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Book] O Plus E 2005年12月号 特集 近接場光とナノデバイス(分担執筆)「近接場分光によってInGaNナノ構造の発光機構に追る」2005
    • Author(s)
      金田昭男, 船戸充, 川上養一, 成川幸男, 向井孝志
    • Publisher
      新技術コミュニケーションズ
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Book] O Plus E 2005年12月号 特集 近接場光とナノデバイス(分担執筆) 「近接場分光によってInGaNナノ構造の発光機構に迫る」2005
    • Author(s)
      金田昭男, 船戸充, 川上養一, 成川幸男, 向井孝志(分担執筆)
    • Publisher
      新技術コミュニケーションズ
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction2021
    • Author(s)
      A. Kafar, A. Sakaki, R. Ishii, S. Stanczyk, K. Gibasiewicz, Y. Matsuda, D. Schiavon, S. Grzanka, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
    • Journal Title

      Photonics Research

      Volume: 9 Pages: 299-299

    • DOI

      10.1364/prj.411701

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-19H02615

  • [Journal Article] Bias-dependent time-resolved photoluminescence spectroscopy on 265 nm AlGaN-based LEDs on AlN substrates2021
    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Pages: 020903-020903

    • DOI

      10.35848/1347-4065/abd91d

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615

  • [Journal Article] Enhanced nonradiative recombination in AlxGa1-xN-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction2021
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 14 Pages: 031007-031007

    • DOI

      10.35848/1882-0786/abe658

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332

  • [Journal Article] Control of p-type conductivity at AlN surfaces by carbon doping2020
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 1 Pages: 015512-015512

    • DOI

      10.7567/1882-0786/ab6589

    • NAID

      210000157912

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-18J11081

  • [Journal Article] Lattice relaxation in semipolar AlxGa1-xN grown on (1-102) AlN substrates2020
    • Author(s)
      R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 13 Pages: 061008-061008

    • DOI

      10.35848/1882-0786/ab9183

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332

  • [Journal Article] Long-range electron-hole exchange interaction in aluminum nitride2020
    • Author(s)
      R. Ishii, M. Funato, and Y. Kawakami
    • Journal Title

      PHYSICAL REVIEW B

      Volume: 102 Pages: 1-5

    • DOI

      10.1103/physrevb.102.155202

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-19H02615

  • [Journal Article] 265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions2020
    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 13 Pages: 102005-102005

    • DOI

      10.35848/1882-0786/abb86f

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-19H02615

  • [Journal Article] Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates2020
    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      AIP Advances

      Volume: 10 Pages: 125014-125014

    • DOI

      10.1063/5.0024179

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615

  • [Journal Article] Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy2020
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Journal Title

      APPLIED PHYSICS LETTERS

      Volume: 117 Pages: 062101-062101

    • DOI

      10.1063/5.0017703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-16H02332

  • [Journal Article] The 2020 UV emitter roadmap2020
    • Author(s)
      Y. Kawakami, M. Funato, and R. Ishii
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 53 Pages: 503001-503001

    • DOI

      10.1088/1361-6463/aba64c

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-19H02615

  • [Journal Article] Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (-1-12-2) semipolar planes2020
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 128

    • DOI

      10.1063/5.0029292

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Journal Article] Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes2020
    • Author(s)
      A. Kafar, R. Ishii, K. Gibasiewicz, Y. Matsuda, S. Stanczyk, D. Schiavon, S. Grzanka, M. Tano, A. Sakaki, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
    • Journal Title

      OPTICS EXPRESS

      Volume: 28 Pages: 22524-22524

    • DOI

      10.1364/oe.394580

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-20H00351, KAKENHI-PROJECT-19H02615

  • [Journal Article] Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells2019
    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
    • Journal Title

      AIP Advances

      Volume: 9 Pages: 125342-125342

    • DOI

      10.1063/1.5125799

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-19H02615

  • [Journal Article] AlxGa1-xN -based quantum wells fabricated on macrosteps effectively suppressing nonradiative recombination2019
    • Author(s)
      M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Advanced Optical Materials

      Volume: 7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] AlxGa1-xN -based quantum wells fabricated on macrosteps effectively suppressing nonradiative recombination2019
    • Author(s)
      M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Advanced Optical Materials

      Volume: 7

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Pushing the limits of deep-ultraviolet scanning near-field optical microscopy2019
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Journal Title

      APL Photonics

      Volume: 4 Pages: 070801-070801

    • DOI

      10.1063/1.5097865

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-19H02615

  • [Journal Article] Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy2019
    • Author(s)
      R. Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 1 Pages: 010904-010904

    • DOI

      10.7567/1347-4065/aaef3e

    • NAID

      210000135251

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26220903, KAKENHI-PROJECT-16H03861, KAKENHI-PROJECT-17H04810, KAKENHI-PROJECT-16H06326

  • [Journal Article] Micro-photoluminescence mapping of surface plasmon-coupled emission from InGaN/GaN quantum wells2019
    • Author(s)
      K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCB31-SCCB31

    • DOI

      10.7567/1347-4065/ab07ae

    • NAID

      210000156116

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-18H01903

  • [Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2019
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Journal Title

      京都大学物性科学センター誌,

      Volume: 33 Pages: 10-17

    • NAID

      120006773146

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates2019
    • Author(s)
      K. Kataoka, M. Funato and Y. Kawakami
    • Journal Title

      physica status solidi (a)

      Volume: 216

    • DOI

      10.1002/pssa.201900764

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation2019
    • Author(s)
      A. Sakaki, M. Funato, M. Miyano, T. Okazaki, and Y. Kawakami
    • Journal Title

      Scientific Reports

      Volume: 9

    • DOI

      10.1038/s41598-019-39086-5

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2019
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Journal Title

      京都大学物性科学センター誌

      Volume: 33 Pages: 10-17

    • NAID

      120006773146

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Journal Article] Red-emitting In<sub> <i>x</i> </sub>Ga<sub>1−<i>x</i> </sub>N/In<sub> <i>y</i> </sub>Ga<sub>1−<i>y</i> </sub>N quantum wells grown on lattice-matched In<sub> <i>y</i> </sub>Ga<sub>1−<i>y</i> </sub>N/ScAlMgO<sub>4</sub>(0001) templates2019
    • Author(s)
      T.　Ozaki, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 1 Pages: 011007-011007

    • DOI

      10.7567/1882-0786/aaf4b1

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells2019
    • Author(s)
      K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 5 Pages: 052016-052016

    • DOI

      10.7567/1882-0786/ab0911

    • NAID

      210000135662

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-18H01903

  • [Journal Article] Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates2019
    • Author(s)
      S. Ichikawa, M. Funato and Y. Kawakami
    • Journal Title

      Journal of Crystal Growth

      Volume: 522 Pages: 68-77

    • DOI

      10.1016/j.jcrysgro.2019.06.010

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates2019
    • Author(s)
      H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
    • Journal Title

      Advance Optical Materials

      Volume: 7 Pages: 1900860-1900860

    • DOI

      10.1002/adom.201900860

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells2018
    • Author(s)
      Sakaki Atsushi、Funato Mitsuru、Kawamura Tomoaki、Araki Jun、Kawakami Yoichi
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 3 Pages: 031001-031001

    • DOI

      10.7567/apex.11.031001

    • NAID

      210000136115

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2018
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Journal Title

      京都大学物性科学センター誌

      Volume: 33 Pages: 10-17

    • NAID

      120006773146

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Dominant nonradiative recombination paths and their activation processes in AlxGa1-xN-related materials2018
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Physical Review Applied

      Volume: 10

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Al<i> <sub>x</sub> </i>Ga<sub>1−</sub> <i> <sub>x</sub> </i>N-based semipolar deep ultraviolet light-emitting diodes2018
    • Author(s)
      R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 6 Pages: 061001-061001

    • DOI

      10.7567/apex.11.061001

    • NAID

      210000136213

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-xN-related Materials2018
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami,
    • Journal Title

      Physical Review Applied

      Volume: 10 Pages: 064027-064027

    • DOI

      10.1103/physrevapplied.10.064027

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Growth mechanism of polar-plane-free faceted InGaN quantum wells2018
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E101-C Pages: 532-536

    • NAID

      130007386831

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Growth mechanism of polar-plane-free faceted InGaN quantum wells2018
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E101-C Pages: 532-536

    • NAID

      130007386831

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Alx Ga1-xN-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination2018
    • Author(s)
      Hayakawa Minehiro、Ichikawa Shuhei、Funato Mitsuru、Kawakami Yoichi
    • Journal Title

      Advanced Optical Materials

      Volume: 7 Pages: 1801106-1801106

    • DOI

      10.1002/adom.201801106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Journal Article] Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE2017
    • Author(s)
      Katsuhiro Kishimoto、Mitsuru Funato、Yoichi Kawakami
    • Journal Title

      Crystals

      Volume: 7 Pages: 123-123

    • DOI

      10.3390/cryst7050123

    • NAID

      120006318891

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Plasmonics toward high efficiency LEDs from the visible to the deep UV region2017
    • Author(s)
      K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada
    • Journal Title

      Proceedings of SPIE Photonics West 2017

      Volume: 101240

    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Origin of temperature-induced luminescence peak shifts from semipolar (112￣2) InxGa1?xN quantum wells2017
    • Author(s)
      Ozaki Takuya、Funato Mitsuru、Kawakami Yoichi
    • Journal Title

      Physical Review B

      Volume: 96

    • DOI

      10.1103/physrevb.96.125305

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] Design of Al-rich AlGaN quantum well structures for efficient UV emitters2017
    • Author(s)
      M. Funato, S. Ichikawa, K. Kumamoto, and Y. Kawakami
    • Journal Title

      Proc. of SPIE

      Volume: 101040

    • DOI

      10.1117/12.2254797

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-14J02639

  • [Journal Article] High-efficiency light emission by means of exciton?surface-plasmon coupling2017
    • Author(s)
      K. Okamoto, M. Funato, Y. Kawakami, and K. Tamada
    • Journal Title

      J. Photochemistry and Photobiology C: Photochemistry Reviews

      Volume: 32 Pages: 58-77

    • DOI

      10.1016/j.jphotochemrev.2017.05.005

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289109, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells2017
    • Author(s)
      Kataoka Ken、Funato Mitsuru、Kawakami Yoichi
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 12 Pages: 121001-121001

    • DOI

      10.7567/apex.10.121001

    • NAID

      210000136026

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Plasmonics toward high efficiency LEDs from the visible to the deep UV region2017
    • Author(s)
      K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada
    • Journal Title

      Proceedings of SPIE Photonics West 2017 (invited paper)

      Volume: 10124

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
    • Author(s)
      Matsuda Yoshinobu、Funato Mitsuru、Kawakami Yoichi
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 7 Pages: 071003-071003

    • DOI

      10.7567/apex.10.071003

    • NAID

      210000135899

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells2017
    • Author(s)
      K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
    • Journal Title

      Applied Physics Letters

      Volume: 111 Pages: 172105-172105

    • DOI

      10.1063/1.4998798

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289109, KAKENHI-PROJECT-15H05732

  • [Journal Article] Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates2017
    • Author(s)
      M. Funato, M. Shibaoka, and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 121 Pages: 085304-085304

    • DOI

      10.1063/1.4977108

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-16H02332, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] Deep-ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells2017
    • Author(s)
      K. Kataoka, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 3 Pages: 031001-031001

    • DOI

      10.7567/apex.10.031001

    • NAID

      210000135777

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region2017
    • Author(s)
      K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada
    • Journal Title

      SPIE Proceedings

      Volume: 10124

    • DOI

      10.1117/12.2249589

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26289109

  • [Journal Article] Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy2016
    • Author(s)
      P.-T. Wu, K. Kishimoto, M. Funato, and Y. Kawakami
    • Journal Title

      Cryst.　Growth 　&　 Design

      Volume: 16 Pages: 6337-6342

    • DOI

      10.1021/acs.cgd.6b00979

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332

  • [Journal Article] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface2016
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
    • Journal Title

      Proc. of SPIE

      Volume: 9363

    • DOI

      10.1117/12.2237606

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-14J02639

  • [Journal Article] クリーンプロセスによるAlNバルク結晶の成長2016
    • Author(s)
      岸元克浩, 呉珮岑, 船戸充, 川上養一
    • Journal Title

      電子情報通信学会 信学技報

      Volume: 116

    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112-2) GaN substrates2016
    • Author(s)
      J. Nishinaka, M. Funato, R. Kido and Y. Kawakami
    • Journal Title

      Phys. Status Solidi B

      Volume: 253 Pages: 78-83

    • DOI

      10.1002/pssb.201552336

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016
    • Author(s)
      T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016
    • Author(s)
      T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy2016
    • Author(s)
      Y. Kawakami, A. Kaneta, A. Hashiya, and M. Funato
    • Journal Title

      Phys. Rev. Applied

      Volume: 6

    • DOI

      10.1103/physrevapplied.6.044018

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Journal Title

      電子情報通信学会 信学技報

      Volume: 116

    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Journal Article] Evaluating the well-to-well distribution of radiative recombination rates in semi-polar $(11\bar{2}2)$ InGaN multiple-quantum-well light-emitting diodes2016
    • Author(s)
      M. Funato, K. Matsufuji, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 7 Pages: 072102-072102

    • DOI

      10.7567/apex.9.072102

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732

  • [Journal Article] クリーンプロセスによるAlNバルク結晶の成長2016
    • Author(s)
      岸元克浩, 呉珮岑, 船戸充, 川上養一
    • Journal Title

      電子情報通信学会 信学技報

      Volume: 116

    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Journal Title

      電子情報通信学会 信学技報

      Volume: 116

    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells2015
    • Author(s)
      M. Funato, Ryan G. Banal, and Y. Kawakami
    • Journal Title

      AIP Advances

      Volume: 5

    • DOI

      10.1063/1.4935567

    • NAID

      120005712947

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy2015
    • Author(s)
      PeiTsen Wu, M. Funato and Y. Kawakami
    • Journal Title

      Scientific Reports

      Volume: 5

    • DOI

      10.1038/srep17405

    • NAID

      120005712946

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] InGaN-based visible light-emitting diodes on ScAlMgO<sub>4</sub>(0001) substrates2015
    • Author(s)
      T. Ozaki, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 6 Pages: 062101-062101

    • DOI

      10.7567/apex.8.062101

    • NAID

      210000137539

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Journal Article] Optical properties of highly strained AlN coherently grown on 6H-SiC(0001)2013
    • Author(s)
      M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 6 Pages: 062604-062604

    • DOI

      10.7567/apex.6.062604

    • NAID

      10031181971

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-24360009

  • [Journal Article] Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures2013
    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Optical Materials Express

      Volume: 3 Pages: 47-53

    • NAID

      120005540813

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Crack-Free Thick AlN Films Obtained by NH3Nitridation of Sapphire Substrates2013
    • Author(s)
      R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 8S Pages: 08JB21-08JB21

    • DOI

      10.7567/jjap.52.08jb21

    • NAID

      210000142615

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Optical Gain Spectra of a (0001) InGaN Green Laser Diode2013
    • Author(s)
      M. Funato, Y. S. Kim, Y. Ochi, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 12 Pages: 122704-122704

    • DOI

      10.7567/apex.6.122704

    • NAID

      210000136903

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Heteroepitaxy between wurtzite and corundum materials2013
    • Author(s)
      Y. Hayashi, R. G. Banal, M. Funato and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 113

    • DOI

      10.1063/1.4804328

    • NAID

      120005439697

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure2013
    • Author(s)
      M. Funato, Y. S. Kim, T. Hira, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 11 Pages: 111002-111002

    • DOI

      10.7567/apex.6.111002

    • NAID

      210000136844

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Huge electron-hole exchange interaction in aluminum nitride2013
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87

    • DOI

      10.1103/physrevb.87.161204

    • NAID

      120005244911

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Grain size dependence of surface plasmon enhanced photoluminescence2013
    • Author(s)
      X. Xu, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
    • Journal Title

      Optics Express

      Volume: 21 Pages: 3145-3151

    • NAID

      120005540812

    • URL

      http://www.opticsinfobase.org/oe/search2.cfm?reissue=J&journalList=4&fullrecord=Grain+size+dependence+of+surface+plasmon+enhanced+photoluminescence&basicsearch=Go

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress2013
    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87

    • DOI

      10.1103/physrevb.87.235201

    • NAID

      120005296104

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Two Photon Absorption Induced Anti-Stokes Emission in Single InGaN/GaN Quantum-Dot-like Objects2013
    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      physica status solidi (RRL) - Rapid Research Letters

      Volume: 7 Pages: 344-347

    • DOI

      10.1002/pssr.201307067

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-24000013, KAKENHI-PROJECT-24310106

  • [Journal Article] Strong optica] polarization in nonpolar (1-100) Al_xGa_<1-x>N/AlN quantum wells2013
    • Author(s)
      M. Funato, K. Matsuda, R. G. Banal, R. Ishii and Y. Kawakami
    • Journal Title

      Physica Status Solidi {B}

      Volume: 87

    • DOI

      10.1103/physrevb.87.041306

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10F00368, KAKENHI-PROJECT-11J00290, KAKENHI-PROJECT-21226001

  • [Journal Article] Instrumentation for dual-probe scanning near-field optical microscopy2012
    • Author(s)
      A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Rev. Sci. Instrum.

      Volume: 83 Pages: 1-11

    • DOI

      10.1063/1.4737883

    • NAID

      120005439698

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003

  • [Journal Article] Homoepitaxy and photoluminescence properties of (0001) AlN2012
    • Author(s)
      M. Funato, K. Matsuda, R. G. Banal, R. Ishii, Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 8 Pages: 082001-082001

    • DOI

      10.1143/apex.5.082001

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J00290, KAKENHI-PROJECT-21226001

  • [Journal Article] Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells2012
    • Author(s)
      T. Suski, G. Staszczak, S. P. Lepkowski, P. Perlin , R. Czernecki, I. Grzegory, M. Funato and Y. Kawakami
    • Journal Title

      Physica Status Solidi {B}

      Volume: 249 Pages: 476-479

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy2012
    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 10 Pages: 102104-102104

    • DOI

      10.1143/apex.5.102104

    • NAID

      10031117546

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003

  • [Journal Article] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates2012
    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 112 Pages: 71-74

    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy2012
    • Author(s)
      R. Fujimoto, A. Kaneta, K. Okamoto, M. Funato and Y. Kawakami
    • Journal Title

      Applied Surface Science

      Volume: 258 Pages: 7372-7376

    • DOI

      10.1016/j.apsusc.2012.04.034

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003

  • [Journal Article] Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells2012
    • Author(s)
      J. Nishinaka, M. Funato and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 112

    • DOI

      10.1063/1.4739723

    • NAID

      120005439699

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Semipolar {n-n01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique2012
    • Author(s)
      M. Funato, T. Kotani, T. Kondou and Y. Kawakami
    • Journal Title

      Applied Physics Letters

      Volume: 100

    • DOI

      10.1063/1.4704779

    • NAID

      120007145038

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Different behavior of semipolar and polar InGaN/GaN quantum wells : Pressure studies of photoluminescence2011
    • Author(s)
      G.Staszczak, T.Suski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi A

      Volume: 208 Pages: 1526-1528

    • DOI

      10.1002/pssa.201000975

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Single mode emission and non-stochastic laser system based on disordered point-sized structures : toward a tuneahle random laser2011
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, K.Okamoto, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Optics Express

      Volume: 19 Pages: 9262-9268

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Micromirror arrays to assess luminescent nano-objects2011
    • Author(s)
      Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Review of Scientific Instruments

      Volume: 82

    • DOI

      10.1063/1.3589855

    • NAID

      120004873774

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003

  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami, A.A.Yamaguchi
    • Journal Title

      Physical Review B

      Volume: 81

    • NAID

      120002511392

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] 100mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
    • Author(s)
      T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Pages: 767-771

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
    • Author(s)
      T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
    • Journal Title

      NaturePhotonics 4

      Pages: 767-771

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Strain-induced effects on the electronic band structures in GaN/AlGaN quantum wells : Impact of breakdown of the quasi-cubic approximation in GaN2010
    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
    • Author(s)
      M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      J.Appl.Phys. 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
    • Author(s)
      Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • DOI

      10.1063/1.3280032

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 81

    • DOI

      10.1103/physrevb.81.155202

    • NAID

      120002511392

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Visualization of the Local Carrier Dynamics in an InGaN Quantum Well Using Dual-Probe Scanning Near-Field Optical Microscopy2010
    • Author(s)
      A. Kaneta, T, Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3 Issue: 10 Pages: 102102-102102

    • DOI

      10.1143/apex.3.102102

    • NAID

      10027441078

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 2111-2114

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN quantum wells2010
    • Author(s)
      T.Oto, R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 1909-1912

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
    • Author(s)
      M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Phys.Stat.Solidi (C) 7

      Pages: 2111-2114

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {20-21} GaN substrates2010
    • Author(s)
      M. Funato, A. Kaneta, Y. Kawakami, Y. Enya, K. Nishizuka, M. Ueno, T. Nakamura
    • Journal Title

      Appl. Phys. Express 3

    • NAID

      10027013275

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010
    • Author(s)
      K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017253764

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20-21} GaN Substrates2010
    • Author(s)
      M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Journal Title

      Applied Physics Express 3

    • NAID

      10027013275

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
    • Author(s)
      Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Journal of Applied Physics 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: definite breakdown of the quasicubic approximation2010
    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami, A.A.Yamaguchi
    • Journal Title

      Phys.Rev.B 81

    • NAID

      120002511392

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
    • Author(s)
      A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
    • Journal Title

      Appl.Phys.Exp. 3

    • NAID

      10027441078

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well2010
    • Author(s)
      V.Ramesh, A.Kikuchi, K.Kishino, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • NAID

      120003386595

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Physical Review B

      Volume: 81

    • NAID

      120002511392

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
    • Author(s)
      T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Pages: 767-771

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar{20-21}GaN Substrates2010
    • Author(s)
      M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Journal Title

      Applied Physics Express 3

    • NAID

      10027013275

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells2010
    • Author(s)
      M.Funato, M.Ueda, D.Inoue, Y.Kawakamai, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10026495062

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells2010
    • Author(s)
      M.Funato, M.Ueda, D.Inoue, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10026495062

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
    • Author(s)
      T. Oto, R. G. Banal, K. Kataoka, M. Funato and Y. Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Pages: 767-771

    • DOI

      10.1038/nphoton.2010.220

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN quantum wells2010
    • Author(s)
      T.Oto, R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 1909-1912

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
    • Author(s)
      Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi, K. Kishino
    • Journal Title

      J. Appl. Phys. 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 2111-2114

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
    • Author(s)
      M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar{20-21}GaN Substrates2010
    • Author(s)
      M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Journal Title

      Applied Physics Express 3

    • NAID

      10027013275

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010
    • Author(s)
      K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017253764

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
    • Author(s)
      A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10027441078

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
    • Author(s)
      Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Journal of Applied Physics 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Strain-induced effects on the electronic band structures in GaN/AlGaN quantum wells : Impact of breakdown of the quasi-cubic approximation in GaN2010
    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well2010
    • Author(s)
      V.Ramesh, A.Kikuchi, K.Kishino, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • NAID

      120003386595

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
    • Author(s)
      A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10027441078

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性2010
    • Author(s)
      船戸充, 上田雅也, 小島一信, 川上養一
    • Journal Title

      レーザー研究 38

      Pages: 255-260

    • NAID

      10026196641

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      J.Appl.Phys. 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
    • Author(s)
      Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Journal of Applied Physics 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x>0.69)2009
    • Author(s)
      R. G. Banal, M. Funato, and Y. Kawakami
    • Journal Title

      Phys. Rev. B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
    • Author(s)
      K. Kojima, H. Kamon, M. Funato, Y. Kawakami
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      40016704620

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article]2009
    • Author(s)
      船戸充, 川上養一
    • Journal Title

      窒化物基板および格子整合基板の成長とデバイス特性(シーエムシー出版)

      Pages: 104-118

    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Growth characteristics of AIN on sapphire substrates by modified migration-enhanced epitaxy2009
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2834-2836

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
    • Author(s)
      K.Kojima, H.Kamon, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      40016704620

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_<1-x>N/GaN quantum disk2009
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Physical Review B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
    • Author(s)
      K.Kojima, H.Kamon, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      40016704620

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
    • Author(s)
      R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, K. Kishino
    • Journal Title

      Phys. Rev. B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2834-2836

    • NAID

      120002317421

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
    • Author(s)
      K.Kojima, H.Kamon, M.Funato, Y.Kawakami
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016704620

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2834-2836

    • NAID

      120002317421

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Phys.Rev.B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_(1-x)N/GaN quantum disk2009
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Physical Review B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
    • Author(s)
      R.G. Banal, M. Funato, Y. Kawakami
    • Journal Title

      J. Crystal Growth 311

      Pages: 2834-2836

    • NAID

      120002317421

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
    • Author(s)
      R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Physical Review B

      Volume: 79

    • DOI

      10.1103/physrevb.79.155307

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Journal Article] Optical anisotropy control of non-c-plane InCaN quantum wells2009
    • Author(s)
      K.Kojima, H.Kamon, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_<1-x>N/GaN quantum disk2009
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi K.Kishino
    • Journal Title

      Physical Review B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Growth characteristics of AIN on sapphire substrates by modified migration-enhanced epitaxy2009
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2834-2836

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article]2009
    • Author(s)
      船戸充, 川上養一
    • Journal Title

      窒化物基板および格子整合基板の成長とデバイス特性(シーエムシー出版)

      Pages: 104-118

    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy2008
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Appl.Phys.Lett. 92

    • NAID

      120001462530

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
    • Author(s)
      A. Kaneta, M. Funato, and Y. Kawakami
    • Journal Title

      Phys. Rev. B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained Quantum wells with potential fluctuations2008
    • Author(s)
      M. Funato, Y. Kawakami
    • Journal Title

      Journal of Applied Physics 103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
    • Author(s)
      A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Phys.Rev.B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura. M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Express 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M.Funato, T.Kondou, K.Hayashi, S.Nishiura, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys..Exp. 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers2008
    • Author(s)
      M.Ueda, M.Funato, K.Kojima, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Phys.Rev.B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers2008
    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Phys. Rev. B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
    • Author(s)
      M. Funato and Y. Kawakami
    • Journal Title

      Journal of Applied Physics 103

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active lavers2008
    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami. Y. Namkawa, T. Mukai
    • Journal Title

      Physical Review B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Lett. 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Express 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet qauantum wells2008
    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami. Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Letters 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa and T. Mukai
    • Journal Title

      Physical Review B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
    • Author(s)
      M. Funato, Y. Kawakami
    • Journal Title

      J. Appl. Phys. 103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Excitonic Properties of Polar, Semipolar, and Nonpolar InGaN/GaN Strained Quantum Wells with Potential Fluctuations2008
    • Author(s)
      M. Funato and Y. Kawakami
    • Journal Title

      J. Appl. Phys. 103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Applied Physics Letters 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Letters 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
    • Author(s)
      M. Funato, Y. Kawakami
    • Journal Title

      Journal of Applied Physics 103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Express 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-18069013

  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Phys. Rev. B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
    • Author(s)
      M.Funato, Y.Kawakami
    • Journal Title

      J.Appl.Phys. 103,

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet. blue, and green spectra2008
    • Author(s)
      A. Kaneta, M. Funato, Y. Kawakami
    • Journal Title

      Physical Review B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
    • Author(s)
      M.Funato, K.Hayashi, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys.Lett. 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Express 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Initial nucleation of AIN grown directly on sapphire substrates by metal-organic vapor phase epitaxy2008
    • Author(s)
      R. G. Banal, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Letters 92

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Exp 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
    • Author(s)
      M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Physical Review B 78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
    • Author(s)
      M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Express 1

    • NAID

      10024292227

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Emission Color Tunable Light-emitting Diodes Composed of InGaN Multifacet Quantum Wells2008
    • Author(s)
      M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Lett 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Optical gain spectra for near UV to aquamarine(A1,In)GaN laser diodes2007
    • Author(s)
      K. Kojima, U. T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai
    • Journal Title

      Optics Express 15

      Pages: 7730-7736

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Optical gain spectra for near UV to aquamarine (A1,In) GaN laser diodes2007
    • Author(s)
      K.Kojima, U.T.Schwarz, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai
    • Journal Title

      Opt.Exp. 15

      Pages: 7730-7736

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures2007
    • Author(s)
      M. Ueda, M. Funato, and Y. Kawakami, 外4名
    • Journal Title

      Physica Status Solidi C 4

      Pages: 2826-2829

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (11-22) GaN substrate2007
    • Author(s)
      K. Kojima, M. funato, Y. Kawakami, S. Masui, S. Nagahama, T. Mukai
    • Journal Title

      Appl. Phys. Lett. 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
    • Journal Title

      Appl. Phys. Lett 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Stimulated emission at 474 nm from an InGaN laser diode structuregrown on a(11-22)GaN substrate2007
    • Author(s)
      K. Kojima, M. Funato, and Y. Kawakami外3名
    • Journal Title

      Applied Physics Letters 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN2007
    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Letters 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN2007
    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Letter 90

      Pages: 2619121-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
    • Author(s)
      Y. Kawakami, M. Funato外5名
    • Journal Title

      Applied Physics Letters 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes2007
    • Author(s)
      K. Kojima, U.T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama and T. Mukai
    • Journal Title

      Optics Express 15

      Pages: 7730-7736

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN2007
    • Author(s)
      K. Kojima, M. Ueda, M. Funato, and Y. Kawakami
    • Journal Title

      Physica Status Solidi B 244

      Pages: 1853-1856

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Comparison between optical gain spectra of In_χ Ga_<1-χ> N/In_0.02Ga_0.98N laser diodes emitting at 404 nm and 470 nm2007
    • Author(s)
      K. Kojima, M. Ueda, M. Funato, and Y. Kawakami
    • Journal Title

      Physica Status Solidi A 204

      Pages: 2108-2111

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Comparison between optical gain spectra of In_xGa_<1-x>N/In_<0.02>Ga_<0.98>N laser diodes emitting at 404 nm and 470 nm2007
    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, H. Braun, U. T. Schwarz, S. Nagahama, and T. Mukai
    • Journal Title

      Phys. Stat. Sol. (A) 204

      Pages: 2108-2111

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
    • Author(s)
      M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Lett. 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Efficient green emission from(11-22)InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, and T. Mukai
    • Journal Title

      Appl. Phys. Lett 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Optical gain spectra for near UV to aquamarine(A1,In)GaN laser diodes2007
    • Author(s)
      K. Kojima, M. Funato, and Y. Kawakami外3名
    • Journal Title

      Optics Express 15

      Pages: 7730-7736

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN2007
    • Author(s)
      K. Kojima, M. Ueda, M. Funato, Y. Kawakami
    • Journal Title

      Phys. Stat. Sol. B 224

      Pages: 1853-1856

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
    • Author(s)
      M. Ueda, M. Funato, and Y. Kawakami, 外4名
    • Journal Title

      Applied Physics Letters 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Efficient green emission from (11-22)InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
    • Author(s)
      Y.Kawakami, K.Nishizuka, D.Yamada, A.Kaneta, M.Funato, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys.Lett. 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures2007
    • Author(s)
      M. Ueda, K. Hayashi, T. Kondou, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
    • Journal Title

      Phys. Stat. Sol. C 4

      Pages: 2826-2829

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
    • Author(s)
      Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, T. Mukai
    • Journal Title

      Appl. Phys. Lett. 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Comparison between optical gain spectra of InxGa1-xN/In0. 02Ga0. 98N laser diodes emitting at 404 nm and 470 nm2007
    • Author(s)
      K. Kojima, M. funato, Y. Kawakami, H. Braun, U.T. Schwarz, S. Nagahama, T. Mukai
    • Journal Title

      Phys. Stat. Sol. A 204

      Pages: 2108-2111

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
    • Author(s)
      M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa and T. Mukai
    • Journal Title

      Applied Physics Letter 90

      Pages: 1719071-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Optical gain spectra for near UV to aquamarine (Al, In) GaN laser diodes2007
    • Author(s)
      K. Kojima, U.T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai
    • Journal Title

      Optics Express 15

      Pages: 7730-7736

    • Data Source
      KAKENHI-PROJECT-19206036

  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy2006
    • Author(s)
      A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y. Kawakami
    • Journal Title

      Phys. Stat. Sol 3

      Pages: 1897-1901

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN qauantum wells by near-field photoluminescence2006
    • Author(s)
      A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      Phys. Stat. Sol.(c) 3・6

      Pages: 1897-1901

    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy2006
    • Author(s)
      A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      Phys.Stat.Solidi (C) 3

      Pages: 1897-1901

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Gain suppression phenomena observed in InxGal-xN quantum well laser diodes emitting at 470 nm2006
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
    • Journal Title

      Appl.Phys.Lett. 89

    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Carrier Transport and optical properties of InGaN SQW with embedded AlGaN δ-layer2006
    • Author(s)
      J. W. Park, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      IEEE J. Quantum Electron 42

      Pages: 1023-1030

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Gain suppression phenomena observed in InxGal-xN quantum well laser diodes emitting at 470 nm2006
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
    • Journal Title

      Appl. Phys. Lett. 89

    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Tailored emission color synthesis using microfacet quantum wells consisting2006
    • Author(s)
      M.Funato, T.Kotani, T.Kondou, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys.Lett. 88

    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Suppression mechanism of optical gain formation in In_xGa_<1-x>N quantum well structures due to localized carriers2006
    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai
    • Journal Title

      Solid State Communications 140

      Pages: 182-184

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors2006
    • Author(s)
      M.Funato, T.Kotani, T.Kondou, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys.Lett. 88

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar (11-22) GaN bulk substrates2006
    • Author(s)
      M.Funato, M.Ueda, Y.Kawakami, Y.Narukawa, T.Kosugi, M.Takahashi, T.Mukai
    • Journal Title

      Jpn.J.Appl.Phys 45

    • NAID

      10017653329

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence2006
    • Author(s)
      A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      Phys.Stat.Sol.(c) 3

      Pages: 1897-1901

    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006
    • Author(s)
      Y. Kawakami, S. Suzuki, A. Kaneta, M. Funato, A. Kikuchi, and K. Kishino
    • Journal Title

      Appl. Phys. Lett 89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm2006
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
    • Journal Title

      Appl.Phys.Lett. 89

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substrates2006
    • Author(s)
      M.Ueda, K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Appl.Phys.Lett. 89

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Transport and optical properties of InGaN SQW with embedded AlGaN delta-layer2006
    • Author(s)
      J.W.Park, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      IEEE J. Quantum Electron 42・10

      Pages: 1023-1030

    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar (11-22) GaN bulk substrates2006
    • Author(s)
      M.Funato, M.Ueda, Y.Kawakami, Y.Narukawa, T.Kosugi, M.Takahashi, T.Mukai
    • Journal Title

      Jpn.J.Appl.Phys.(Express Letter) 45

    • NAID

      10017653329

    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in In_xGa_<1-x> quantum wells by near field photoluminescence spectroscopy2006
    • Author(s)
      A.Kaneta, M.Funato, G.Marutuki, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      Physica Status Solidi (c) (in press)

    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Gain suppression phenomena observed in In_xGa_<1-x>N quantum well laser diodes emitting at 470 nm2006
    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, H. Braun and U.T. Schwarz
    • Journal Title

      Appl. Phys. Lett 89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Suppression mechanism of optical gain formation in InxGal-xN quantum well structures due to localized carriers2006
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Solid State Communications 140・3-4

      Pages: 182-184

    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Suppression mechanism of optical gain formation in InxGal-xN quantum well structures due to localized carriers2006
    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Solid State Communications 140・3-4

      Pages: 182-184

    • Data Source
      KAKENHI-PLANNED-18069007

  • [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006
    • Author(s)
      Y.Kawakami, S.Suzuki, A.Kaneta, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Appl. Phys. Lett. 89

    • Data Source
      KAKENHI-PROJECT-18206002

  • [Journal Article] Efficient rainbow color luminescence from In_xGa_<1_x>N single quantum wells fabricated on {1122} microfacets2005
    • Author(s)
      K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Letters 87

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Fabrication and characterization of GaN based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics2005
    • Author(s)
      T.Kotani, Y.Hatada, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
    • Journal Title

      physica status solidi (c) (in press)

    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics2005
    • Author(s)
      T.Kotani, Y.Hatada, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami, S.Fujita
    • Journal Title

      Physica Status Solidi (c) 2

      Pages: 2895-2898

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Fabrication and characterization of GaN-based distributed Bragg refleeter mirrors for low lasing threshold and integrated photonics2005
    • Author(s)
      T.Kotani, Y.Hatada, M.Funato, Y.Nakamura, T.Mukai, Y.Kawakami, S.Fujita
    • Journal Title

      Physica Status Solidi (c) 2

      Pages: 2895-2898

    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Efficient rainbow color luminescence from In_xG_<1_x>N single quantum wells fabricated on {112^^-2} microfacets2005
    • Author(s)
      K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Letters 87

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Efficient rainbow color luminescence from In_xGa_<1-x>N single quantum wells fabricated on {11-22} microfacets2005
    • Author(s)
      K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Letters 87

    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Efficient radiative recombination from <1122>-oriented In_xGa_<1-x>N multiple quantum wells fabricated by the re-growth technique2004
    • Author(s)
      K.Nishizuka, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami, Sg.Fujita
    • Journal Title

      Applied Physics Letters 85

      Pages: 3122-3124

    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Efficient radiative recombination from <1122> -oriented InGaN multiple quantum wells fabricated by the re-growth technique2004
    • Author(s)
      K.Nishizuka, M.Funato Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
    • Journal Title

      Applied Physics Letters 85

      Pages: 3122-3124

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Optically pumped lasing and gain formation properties in blue In_xGa_<1-x>N MQWs2004
    • Author(s)
      K.Kojima, A.Shikanai, K.Omae, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
    • Journal Title

      Physica Status Solidi (b) 241

      Pages: 3676-2680

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Optically pumped lasing and gain formation properties in blue In_xGa_<1_x>N MQWs2004
    • Author(s)
      K.Kojima, A.Shikanai, K.Omae, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
    • Journal Title

      physica status solidi (b) 241

      Pages: 2676-2680

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Journal Article] Efficient radiative recombination from <112^^-2> -oriented InGaN multiple quantum wells fabricated by the re-growth technique2004
    • Author(s)
      K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
    • Journal Title

      Applied Physics Letters 85

      Pages: 3122-3124

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206033

  • [Patent] 半導体発光素子、半導体発光素子の製造方法、LED素子、電子線励起型光源装置2015
    • Inventor(s)
      川上 養一，船戸　充，片岡　研，山口 真典
    • Industrial Property Rights Holder
      ウシオ電機株式会社
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2018
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2012
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2012-01-20
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Number
      2010-128252
    • Filing Date
      2011-12-21
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 外2名
    • Industrial Property Rights Holder
      京都大学,外4名
    • Filing Date
      2010-06-21
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 紫外線照射装置2010
    • Inventor(s)
      川上養一, 船戸充, 大音隆男, R.G.Banal, 外3名
    • Industrial Property Rights Holder
      京都大学, ウシオ電機(株)
    • Filing Date
      2010-06-03
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Patent] 紫外線照射装置2010
    • Inventor(s)
      岡本晃一, 船戸充, 川上養一, 外2名
    • Industrial Property Rights Holder
      京都大学, ウシオ電機(株), 外5名
    • Filing Date
      2010-08-03
    • Overseas
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Patent] 紫外線照射装置2010
    • Inventor(s)
      岡本晃一, 船戸充, 川上養一, 外2名
    • Industrial Property Rights Holder
      京都大学, ウシオ電機(株), 外5名
    • Filing Date
      2010-08-03
    • Overseas
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Patent] 紫外線照射装置2010
    • Inventor(s)
      川上養一, 船戸充, 大音隆男, R.G.Banal, 外3名
    • Industrial Property Rights Holder
      京都大学, ウシオ電機(株)
    • Filing Date
      2010-06-03
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010
    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Type
      特許
    • Filing Date
      2010-06-21
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Patent] 窒化物半導体レーザ素子2007
    • Inventor(s)
      小島一信, 川上養一, 船戸充, 長濱愼一, 枡井真吾
    • Industrial Property Rights Holder
      京都大学,日亜化学工業(株)
    • Filing Date
      2007-09-14
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Patent] InGaN量子井戸レーザの作成方法2007
    • Inventor(s)
      小島一信, 川上養一, 船戸充外2名
    • Industrial Property Rights Holder
      京都大学, 日亜化学工業(株)
    • Filing Date
      2007-09-14
    • Data Source
      KAKENHI-PROJECT-19206036

  • [Patent] InGaN量子井戸レーザの作成方法2007
    • Inventor(s)
      小島一信, 川上養一, 船戸充, 長濱慎一, 枡井真吾
    • Industrial Property Rights Holder
      京都大学, 日亜化学工業(株)
    • Filing Date
      2007-09-14
    • Data Source
      KAKENHI-PROJECT-18206002

  • [Presentation] Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers2021
    • Author(s)
      R. Ishii, M. Funato, and Y. Kawakami
    • Organizer
      SPIE Photonics West: 11686-51
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] SiO2薄膜によるInGaN/GaN量子井戸を有する窒化物半導体の高効率発光2021
    • Author(s)
      垣内晴也, 島ノ江考平, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第68回応用物理学会春季学術講演会, online ：17p-Z27-6
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] Recombination mechanism in III-nitride based singularity structures by scanning near-field optical microscopy2021
    • Author(s)
      Y. Kawakami, R. Ishii, and M. Funato
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology: C10-10-55
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] Ultrathin GaN/AlN quantum wells for deep UV emitters2021
    • Author(s)
      M. Funato, and Y. Kawakami
    • Organizer
      SPIE Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Ultrathin GaN/AlN quantum wells for deep UV emitters2021
    • Author(s)
      M. Funato, and Y. Kawakami
    • Organizer
      SPIE Photonics West: 11686-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] InGaN-based quantum wells on ScAlMgO4 substrates toward long wavelength emitters2020
    • Author(s)
      T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] エレクトロルミネッセンス・フォトルミネッセンス法によるAlN基板上265 nm帯AlGaN LEDの評価2020
    • Author(s)
      石井良太, 吉川陽, 永瀬和宏, 船戸充, 川上養一
    • Organizer
      電子情報通信学会研究会：D2020-6/CPM2020-27/LQE2020-57
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] Exciton fine structure of aluminum nitride2020
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Exciton fine structure of aluminum nitride2020
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] InGaN-based quantum wells on ScAlMgO4 substrates toward long wavelength emitters2020
    • Author(s)
      T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] First demonstration and characterization of semipolar deep ultraviolet LEDs on r-AlN2020
    • Author(s)
      R. Akaike, M. Funato, and Y. Kawakami
    • Organizer
      39th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] First demonstration and characterization of semipolar deep ultraviolet LEDs on r-AlN2020
    • Author(s)
      R. Akaike, M. Funato, and Y. Kawakami
    • Organizer
      39th Electronic Materials Symposium: P2-17
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] プラズモニックナノ共振器による高効率発光と量子デバイスへの応用2020
    • Author(s)
      岡本晃一, 垣内晴也, 島ノ江考平, 村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一
    • Organizer
      電子情報通信学会研究会：ED2020-25/CPM2020-46/LQE2020-76
    • Data Source
      KAKENHI-PROJECT-20H05622

  • [Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
    • Author(s)
      小林敬嗣, 市川修平, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Experimental study on semipolar (-1-12-2) LEDs toward polar-plane-free faceted InGaN LEDs on (-1-12-2)2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
    • Author(s)
      M. Funato, H. Kobayashi and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019
    • Author(s)
      正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 極性面フリーな三次元InGaN-LEDのデバイスプロセス検討2019
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] InGaN/GaN多重量子井戸の表面プラズモン侵入長を超えた発光増強2019
    • Author(s)
      村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates2019
    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリーな三次元InGaN-LEDのデバイスプロセス検討2019
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Experimental study on semipolar (-1-12-2) LEDs toward polar-plane-free faceted InGaN LEDs on (-1-12-2)2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      Conference on LED and its industrial application `19 (LEDIA)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
    • Author(s)
      小林敬嗣, 市川修平, 船戸充, 川上養一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation2019
    • Author(s)
      A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
    • Author(s)
      M. Funato, H. Kobayashi and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 圧電素子を用いた光音響分光測定系の構築によるGaNの支配的な非輻射再結合過程の評価2019
    • Author(s)
      山崎一人, 石井良太, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      Conference on LED and its industrial application `19 (LEDIA)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] InGaN/GaN多重量子井戸における表面プラズモン増強の温度依存性2019
    • Author(s)
      村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Fabrication of polar-plane-free faceted InGaN LED structures with polychromatic emission properties2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] InGaN/GaN多重量子井戸における表面プラズモン増強の温度依存性2019
    • Author(s)
      村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 圧電素子を用いた光音響分光測定系の構築によるGaNの支配的な非輻射再結合過程の評価'2019
    • Author(s)
      山崎一人, 石井良太, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリーな三次元InGaN-LED構造の結晶成長と評価2019
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会,
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
    • Author(s)
      M. Funato, K. Kataoka and Y. Kawakami
    • Organizer
      3th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well2019
    • Author(s)
      R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates2019
    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Fabrication of polar-plane-free faceted InGaN LED structures with polychromatic emission properties2019
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング2019
    • Author(s)
      石井良太, 小山友二, 船戸充, 川上養一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling2019
    • Author(s)
      A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
    • Author(s)
      M. Funato, K. Kataoka and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 極性面フリーな三次元InGaN-LED構造の結晶成長と評価2019
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 深紫外近接場光学顕微鏡の開発とAlリッチAlGaN系特異構造のPLマッピング評価2019
    • Author(s)
      石井良太, 船戸充,　川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Emission enhancements of InGaN/GaN MQW beyond skin depth of surface plasmon polariton2019
    • Author(s)
      F. Murao, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami and K. Okamoto
    • Organizer
      7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well2019
    • Author(s)
      R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling2019
    • Author(s)
      A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 深紫外近接場光学顕微鏡の開発とAlリッチAlGaN系特異構造のPLマッピング評価2019
    • Author(s)
      石井良太, 船戸充,　川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Emission enhancements of InGaN/GaN MQW beyond skin depth of surface plasmon polariton2019
    • Author(s)
      F. Murao, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami and K. Okamoto
    • Organizer
      7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
    • Author(s)
      K. Kishimoto, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation2019
    • Author(s)
      A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング2019
    • Author(s)
      石井良太, 小山友二, 船戸充, 川上養一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] InGaN/GaN多重量子井戸の表面プラズモン侵入長を超えた発光増強2019
    • Author(s)
      村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
    • Author(s)
      小林敬嗣, 市川修平, 船戸充, 川上養一
    • Organizer
      第６６回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019
    • Author(s)
      正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
    • Author(s)
      M. Funato, H. Kobayashi and Y. Kawakami
    • Organizer
      3th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
    • Author(s)
      M. Funato, K. Kataoka and Y. Kawakami
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
    • Author(s)
      M. Funato, S. Ichikawa, and Y. Kawakami
    • Organizer
      19th Intern. Conf. on MOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 表面プラズモンによるInGaN/GaN多層量子井戸への発光増強効果2018
    • Author(s)
      村尾文弥, 中村俊樹, 松山哲也, 和田 健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリー三次元InGaN量子井戸を用いたパステルカラー・白色合成2018
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Controlling p-type conductivity at AlN surfaces2018
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors,
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Controlling p-type conductivity at AlN surfaces2018
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] In0.17Ga0.83N/ScMgAlO4テンプレート上に作製した赤色発光InxGa1-xN/In0.17Ga0.83N量子井戸構造 (x > 0.17)2018
    • Author(s)
      前原圭汰, 尾崎拓也, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
    • Author(s)
      片岡研，千賀岳人，船戸充，川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] In0.17Ga0.83N/ScMgAlO4テンプレート上に作製した赤色発光InxGa1-xN/In0.17Ga0.83N量子井戸構造 (x > 0.17)2018
    • Author(s)
      前原圭汰, 尾崎拓也, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE 合同研究会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
    • Author(s)
      川上養一, 早川峰洋, 船戸充
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 表面プラズモンによるInGaN/GaN多層量子井戸への発光増強効果2018
    • Author(s)
      村尾文弥, 中村俊樹, 松山哲也, 和田 健司, 船戸充, 川上養一, 岡本晃一
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 極性面フリーな三次元InGaN量子井戸からの輻射再結合寿命が短いパステルグリーン発光2018
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
    • Author(s)
      早川峰洋, 市川修平, 船戸充,川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
    • Author(s)
      川上養一, 早川峰洋, 船戸充
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN表面におけるp型伝導の制御2018
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会,
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 深紫外CW・時間分解PL分光法による12C/13C超格子の光学特性評価2018
    • Author(s)
      石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 深紫外CW・時間分解PL分光法による12C/13C超格子の光学特性評価2018
    • Author(s)
      石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
    • Author(s)
      岸元克浩, 船戸充,川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
    • Author(s)
      H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
    • Author(s)
      片岡研, 千賀岳人, 船戸充,　川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel and white color syntheses2018
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
    • Author(s)
      早川峰洋, 市川修平, 船戸充, 川上養一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] AlN表面におけるp型伝導の制御2018
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Organizer
      電子情報通信学会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Micro-photoluminescence mapping of surface plasmon coupled emission from InGaN/GaN quantum wells2018
    • Author(s)
      K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
    • Author(s)
      M. Funato, S. Ichikawa, and Y. Kawakami
    • Organizer
      19th Intern. Conf. on MOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Controlling p-type conductivity at AlN surfaces2018
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
    • Author(s)
      H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 極性面フリーな三次元InGaN量子井戸からの輻射再結合寿命が短いパステルグリーン発光2018
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
    • Author(s)
      M. Funato, S. Ichikawa, and Y. Kawakami
    • Organizer
      19th Intern. Conf. on MOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Organizer
      電子情報通信学会 研究会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
    • Author(s)
      川上養一, 早川峰洋, 船戸充
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
    • Author(s)
      岸元克浩, 船戸充,川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Micro-photoluminescence mapping of surface plasmon coupled emission from InGaN/GaN quantum wells2018
    • Author(s)
      K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 極性面フリーな三次元InGaN量子井戸を用いた混合色合成と制御2018
    • Author(s)
      松田祥伸,船戸充, 川上養一
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates lattice-matched to ScMgAlO4 substrates2018
    • Author(s)
      K. Maehara, T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x : 0 - 1) active layers2018
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Growth evolution of polar-plane-free faceted GaN structures2018
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Organizer
      19th Intern. Conf. on MOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN表面におけるp型伝導の制御2018
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第1回結晶工学 ISYSE合同研究会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates lattice-matched to ScMgAlO4 substrates2018
    • Author(s)
      K. Maehara, T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x : 0 - 1) active layers2018
    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
    • Author(s)
      船戸充, 市川修平, 川上養一
    • Organizer
      電子情報通信学会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
    • Author(s)
      H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Growth evolution of polar-plane-free faceted GaN structures2018
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Organizer
      19th Intern. Conf. on MOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel and white color syntheses2018
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      International Workshop on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリー三次元InGaN量子井戸を用いたパステルカラー・白色合成2018
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第７９回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
    • Author(s)
      片岡研, 千賀岳人, 船戸充,川上養一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 極性面フリーな三次元InGaN量子井戸を用いた混合色合成と制御2018
    • Author(s)
      松田祥伸,船戸充, 川上養一
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
    • Author(s)
      早川峰洋, 市川修平, 船戸充,川上養一
    • Organizer
      第65回応用物理学会春季学術講演会, 早稲田大学
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Spatially-resolved evaluation of surface-plasmon-coupled photoluminescence-enhancement of InGaN/GaN quantum wells2017
    • Author(s)
      K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果2017
    • Author(s)
      石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 窒化物半導体における輻射・非輻射再結合過程2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K14232

  • [Presentation] 三次元InGaN量子井戸におけるIn組成のファセット間分布に関する考察2017
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
    • Organizer
      36th Electronic Materials Symposium, Nagahama Royal Hotel
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      Intern. Workshop on UV Materials and Devices 2017
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 高効率白色合成に向けた極性面フリーな三次元InGaN量子井戸の作製と評価2017
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlN系三次元構造による紫外多波長発光LED2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] GaN系3次元マイクロファセット構造による多波長LEDの開発2017
    • Author(s)
      川上養一, 松田祥伸, 船戸充
    • Organizer
      照明学会固体光源分科会 研究会
    • Place of Presentation
      日本大学 理工学部 駿河台キャンパス
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Spatially-resolved evaluation of surface-plasmon-coupled photoluminescence-enhancement of InGaN/GaN quantum wells2017
    • Author(s)
      K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
    • Author(s)
      Y. Kawakami, T. Ozaki, and M. Funato
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN系三次元構造の形成と紫外多波長発光2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      29th International Conference on Defects in Semiconductors, Matsue, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN growth by an environmentally friendly method2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      2017 German-Japanese-Spanish joint workshop
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2017-03-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas2017
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Polychromatic emission from semi/nonpolar faceted 3D-InGaN quantum wells with high radiative recombination probabilities2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlN系三次元構造の形成と紫外多波長発光2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜，横浜
    • Year and Date
      2017-03-15
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      International Workshop on UV Materials and Devices 2017, Fukuoka, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] マクロステップ上AlGaN量子細線の光学特性2017
    • Author(s)
      早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 高効率白色合成に向けた極性面フリーな三次元InGaN量子井戸の作製と評価2017
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
    • Author(s)
      Y. Kawakami, T. Ozaki, and M. Funato
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14232

  • [Presentation] GaN系3次元マイクロファセット構造による多波長LEDの開発2017
    • Author(s)
      川上養一, 松田祥伸, 船戸充
    • Organizer
      照明学会固体光源分科会 研究会
    • Place of Presentation
      日本大学 理工学部 駿河台キャンパス
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 一軸性応力下におけるダイヤモンドの微分吸収スペクトル2017
    • Author(s)
      石井良太, 鹿田真一, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 顕微フォトルミネセンスマッピングによる表面プラズモン発光増強の評価2017
    • Author(s)
      立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2017-01-31
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
    • Organizer
      36th Electronic Materials Symposium, Nagahama Royal Hotel
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN growth by an environmentally friendly method2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      2017 German-Japanese-Spanish joint workshop
    • Place of Presentation
      Mallorca, Spain
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 一軸性応力下におけるダイヤモンドの微分吸収スペクトル2017
    • Author(s)
      石井良太, 鹿田真一, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
    • Author(s)
      Y. Kawakami, T. Ozaki, and M. Funato
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 短波長半導体発光デバイスの現状と動向2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第48回アナログ技術トレンドセミナ(HAB研セミナ), 京都テルサ
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜，横浜
    • Year and Date
      2017-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      レーザ・量子エレクトロニクス研究会(LQE) (2017)，LQE奨励賞記念講演
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      29th International Conference on Defects in Semiconductors, Matsue, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] An environmentally friendly method to grow AlN thick layers2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      0th Intern. Workshop on Bulk Nitride Semiconductors, Espoo, Finland
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜，横浜
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      36th Electronic Materials Symposium, Nagahama Royal Hotel
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] AlN系三次元構造による紫外多波長発光LED2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] マクロステップ上AlGaN量子細線の光学特性2017
    • Author(s)
      早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
    • Organizer
      電子情報通信学会　レーザ・量子エレクトロニクス研究会, 名古屋大学
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 顕微フォトルミネセンスマッピングによる表面プラズモン発光増強の評価2017
    • Author(s)
      立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 窒化物半導体における輻射・非輻射再結合過程2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] An environmentally friendly method to grow AlN thick layers2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Workshop on Bulk Nitride Semiconductors, Espoo, Finland
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
    • Author(s)
      岸元克浩, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas.2017
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN growth by an environmentally friendly method2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      2017 German-Japanese-Spanish joint workshop
    • Place of Presentation
      Mallorca, Spain
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 窒化物半導体における輻射・非輻射再結合過程 (Tutorial)2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会，北海道大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      International Workshop on UV Materials and Devices 2017 (IWUMD2017), Fukuoka, Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 三次元InGaN量子井戸におけるIn組成のファセット間分布に関する考察2017
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN系三次元構造による紫外多波長発光LED2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Polychromatic emission from semi/nonpolar faceted 3D-InGaN quantum wells with high radiative recombination probabilities2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
    • Organizer
      36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      36th Electronic Materials Symposium, Nagahama Royal Hotel
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] マクロステップ上AlGaN量子細線の光学特性2017
    • Author(s)
      早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
    • Organizer
      電子情報通信学会　レーザ・量子エレクトロニクス研究会, 名古屋大学
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 窒化物半導体における輻射・非輻射再結合過程(Tutorial).2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会，北海道大学
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 短波長半導体発光デバイスの現状と動向2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第48回アナログ技術トレンドセミナ(HAB研セミナ)
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas2017
    • Author(s)
      K. Kishimoto, M. Funato and Y. Kawakami
    • Organizer
      12th International Conference on Nitride Semiconductors, Strasbourg, France
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果2017
    • Author(s)
      石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
    • Organizer
      第78回応用物理学会秋季学術講演会, 福岡国際会議場
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] An environmentally friendly method to grow AlN thick layers2017
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Workshop on Bulk Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] AlN系三次元構造の形成と紫外多波長発光2017
    • Author(s)
      片岡研, 千賀岳人, 船戸充, 川上養一
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 短波長半導体発光デバイスの現状と動向2017
    • Author(s)
      船戸充, 川上養一
    • Organizer
      第48回アナログ技術トレンドセミナ(HAB研セミナ), 京都テルサ
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters2017
    • Author(s)
      Y. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      レーザ・量子エレクトロニクス研究会(LQE) (2017)，LQE奨励賞記念講演
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] (0001)面AlGaN/AlNヘテロ構造におけるすべり系と格子緩和モデル2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学, 東京都目黒区
    • Year and Date
      2016-03-22
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 微傾斜(0001)サファイア基板上に作製したAlGaN量子細線構造における輻射再結合過程の増強2016
    • Author(s)
      早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学, 東京都目黒区
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Spatially Resolved Evaluation of Surface Plasmon Enhanced Photoluminescence of InGaN/GaN2016
    • Author(s)
      K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
    • Organizer
      The 14th International Conference on Near-Field Optics, Nanophotonics, and Related Techniques (NFO-14)
    • Place of Presentation
      浜松
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      一般社団法人　電子情報技術産業協会 第12回 量子現象利用デバイス技術分科会
    • Place of Presentation
      大手センタービル
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] GaNとAlNの物性定数の同定と(Al,Ga)N系半導体の物性予測2016
    • Author(s)
      石井良太、船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
    • Author(s)
      T.Ozaki, M.Funato, and Y.Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      一般社団法人　電子情報技術産業協会, 第12回 量子現象利用デバイス技術分科会
    • Place of Presentation
      大手センタービル
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
    • Author(s)
      M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on UV Materials and Devices
    • Place of Presentation
      Beijing, China
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] クリーンプロセスによるAlNバルク結晶の成長2016
    • Author(s)
      岸元克浩, 呉珮岑, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      京大桂キャンパス
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
    • Author(s)
      M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on UV Materials and Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2016-07-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] ScAlMgO4(0001)基板上InGaN薄膜における組成引き込み効果2016
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
    • Author(s)
      T.Ozaki, M.Funato, and Y.Kawakami
    • Organizer
      Intern.　Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K14232

  • [Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
    • Author(s)
      M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on UV Materials and Devices
    • Place of Presentation
      Beijing, China
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ，新潟
    • Year and Date
      2016-09-15
    • Data Source
      KAKENHI-PROJECT-16K14232

  • [Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖，滋賀
    • Year and Date
      2016-07-07
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2016-10-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] 微小なオフ角に由来するc面AlGaN/AlNヘテロ界面におけるc面すべりの可能性2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Evolution of strain and dislocations during ESVPE growth of AlN2016
    • Author(s)
      K. Kishimoto, P.-T. Wu, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      京大桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ，新潟
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Evolution of strain and dislocations during ESVPE growth of AlN2016
    • Author(s)
      K. Kishimoto, P.-T. Wu, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 近接場過渡レンズ法によるInGaN単一量子井戸におけるキャリアダイナミクスの評価2016
    • Author(s)
      塚本真大, 石井良太, 船戸充, 川上養一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学, 東京都目黒区
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE法によるAlN/サファイア界面構造の制御2016
    • Author(s)
      岸元克浩，P.-T. Wu, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Three dimensional semi/nonpolar InGaN quantum wells toward phosphor-free polychromatic emitters2016
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Stress-dependent spectroscopy on single-crystalline diamond2016
    • Author(s)
      R. Ishii, S. Shikata, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
    • Author(s)
      川上養一, 市川修平, 船戸充
    • Organizer
      （社）電子情報技術産業協会, 第12回 量子現象利用デバイス技術分科会
    • Place of Presentation
      大手センタービル，東京
    • Year and Date
      2016-12-21
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] マクロステップを利用したAlGaN量子細線構造による温度消光の低減2016
    • Author(s)
      早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Year and Date
      2016-05-09
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
    • Author(s)
      T.Ozaki, M.Funato, and Y.Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
    • Author(s)
      船戸充, 川上養一
    • Organizer
      光とレーザーの科学技術フェア2016, 紫外線セミナー
    • Place of Presentation
      科学技術館（東京都千代田区北の丸公園２番１号）
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Stress-dependent spectroscopy on single-crystalline diamond2016
    • Author(s)
      R. Ishii, S. Shikata, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 微小なオフ角に由来するc面AlGaN/AlNヘテロ界面におけるc面すべりの可能性2016
    • Author(s)
      市川修平, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] ScAlMgO4(0001)基板上InGaN薄膜における組成引き込み効果2016
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-16K14232

  • [Presentation] AlGaN系ヘテロ構造における格子不整転位の導入箇所制御2016
    • Author(s)
      市川修平, 熊本恭介, 船戸充, 川上養一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学, 東京都目黒区
    • Year and Date
      2016-03-22
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Approaches to highly efficient UV emitters based on AlGaN quantum wells2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      SPIE Photonics West 2016
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2016-02-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
    • Author(s)
      松田祥伸, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      京大桂キャンパス
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] InGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価2016
    • Author(s)
      立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
    • Author(s)
      船戸充, 川上養一
    • Organizer
      光とレーザーの科学技術フェア2016, 紫外線セミナー
    • Place of Presentation
      科学技術館（東京都千代田区北の丸公園２番１号）
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Year and Date
      2016-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] nGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価2016
    • Author(s)
      立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2016-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] マクロステップを利用したAlGaN量子細線構造による温度消光の低減2016
    • Author(s)
      早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] EVPE法によるAlN/サファイア界面構造の制御2016
    • Author(s)
      岸元克浩，P.-T. Wu, 船戸充, 川上養一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
    • Author(s)
      船戸充, 川上養一
    • Organizer
      光とレーザーの科学技術フェア2016
    • Place of Presentation
      科学技術館，東京
    • Year and Date
      2016-11-17
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
    • Author(s)
      S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] GaNとAlNの物性定数の同定と(Al,Ga)N系半導体の物性予測2016
    • Author(s)
      石井良太、船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス
    • Year and Date
      2016-05-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02332

  • [Presentation] Three dimensional semi/nonpolar InGaN quantum wells toward phosphor-free polychromatic emitters2016
    • Author(s)
      Y. Matsuda, M. Funato, and Y. Kawakami
    • Organizer
      35th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] ESVPE法により作製したAlN膜結晶性の膜厚依存性2016
    • Author(s)
      岸元克浩, Wu PeiTsen, 船戸充, 川上養一
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学, 東京都目黒区
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering
    • Place of Presentation
      San Diego, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] ESVPE成長AlNの厚膜化に伴う歪および転位の評価2016
    • Author(s)
      岸元克浩, P.-T.Wu, 船戸充, 川上養一
    • Organizer
      第8回窒化物半導体結晶成長講演会，京都大学桂キャンパス
    • Place of Presentation
      京都大学桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
    • Author(s)
      M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
    • Organizer
      SPIE Nanoscience + Engineering,
    • Place of Presentation
      San Diego
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06426

  • [Presentation] クリーンプロセスによるAlNバルク結晶の成長2016
    • Author(s)
      岸元克浩, 呉珮岑, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      京大桂キャンパス
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Deep ultraviolet multi-wavelength emission from AlGaN quantum wells fabricated on three-dimensional facet structures2015
    • Author(s)
      K. Kataoka, M. Funato and Y. Kawakami
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] アルミニウムを用いたプラズモニクスの発光増強応用2015
    • Author(s)
      岡本 晃一, 立石 和隆, 川元 駿, 西田 知句, 玉田 薫, 船戸 充, 川上 養一
    • Organizer
      電子情報通信学会　レーザ・量子エレクトロニクス研究会(LQE)
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Visible light emitting diodes based on InGaN/GaN multi quantum wells grown on ScAlMgO4(0001) substrates ― Purple to green spectral region―2015
    • Author(s)
      T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-09-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] AlN基板上への半極性AlGaN量子井戸のMOVPE成長と光物性2015
    • Author(s)
      市川修平,船戸充, 川上養一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-15
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Visible light-emitting diodes on ScAlMgO4 (0001) substrates2015
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      2015 German-Japanese-Spanish joint workshop
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-07-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Microscopic Photoluminescence Mapping of Plasmonic Enhanced Emission from InGaN/GaN Quantum Well2015
    • Author(s)
      Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Pangpang Wang, Sou Ryuzaki, Koichi Okamoto, and Kaoru Tamada
    • Organizer
      The 2015 International Chemical Congress of Pacific Basin Societies (Pacifichem)
    • Place of Presentation
      Hawaii, USA
    • Year and Date
      2015-12-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Tutorial RR: Introduction to Wide-Bandgap Materials for Power Electronics and Solid State Lighting2015
    • Author(s)
      M. Funato
    • Organizer
      2015 MRS Fall meeting & exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Optically determined critical thickness of AlGaN/AlN heterostructures2015
    • Author(s)
      S. Ichikawa, Y. Iwata, M. Funato and Y. Kawakami
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Spatially resolved characterizations of the enhanced light emissions from InGaN/GaN by the surface plasmon resonance with silver and aluminum2015
    • Author(s)
      K. Okamoto, K. Tateish, S. Kawamoto, H. Nishida, M. Funato and Y. Kawakami
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hamamatsu, Japan
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Dominant nonradiative recombination paths in Al-rich AlGaN related structures2015
    • Author(s)
      S. Ichikawa, M. Funato, Y. Iwasaki, and Y. Kawakami
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-31
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Highly Enhanced Green Emission from Indium Galium Nitride Quantum Well by Surface Plasmon on Aluminum Film2015
    • Author(s)
      Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Sou Ryuzaki, Pangpang Wang, Koichi Okamoto, and Kaoru Tamada
    • Organizer
      International Conference on Materials for Advanced Technologies (ICMAT2015)
    • Place of Presentation
      Singapore
    • Year and Date
      2015-07-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] 過渡レンズ法を用いたGaN基板と薄膜における非輻射再結合過程の評価2015
    • Author(s)
      塚本真大, 石井良太, 船戸充, 川上養一
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-16
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Radiative and nonradiative recombination processes in AlN-based deep ultraviolet emitters2015
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      2015 MRS Fall meeting & exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2015-12-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Nonradiative recombination paths in AlGaN-related structures and their temperature dependence2015
    • Author(s)
      S.Ichikawa, M. Funato and Y. Kawakami
    • Organizer
      34th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako ,Shiga
    • Year and Date
      2015-07-16
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Radiative and nonradiative recombination processes in Al-rich AlGaN-based materials2015
    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      2015 German-Japanese-Spanish joint workshop
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-07-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] ScAlMgO4基板の構成元素がGaN成長層の特性に与える影響2015
    • Author(s)
      尾崎拓也, 船戸充, 川上養一
    • Organizer
      第76回応用物理学会秋季学術講演
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H05732

  • [Presentation] Visualization of recombination dynamics in nitride-based semiconductors2013
    • Author(s)
      Y. Kawakami, M. Funato and A. Kaneta
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2013-08-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Semipolar faceting for InGaN-based polychromatic LEDs2013
    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      CLEO : 2013
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2013-06-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 半極性(11-22)GaN基板上に成長したInGaN/GaN多重量子井戸の臨界膜厚2012
    • Author(s)
      西中淳一, 船戸充, 川上養一
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館
    • Year and Date
      2012-03-18
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] High quality AlGaN-based quantum wells for deep-ultraviolet emitters2012
    • Author(s)
      M. Funato
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2012-05-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 近接場分光による局在・幅射・非幅射再結合ダイナミクスの評価2012
    • Author(s)
      川上養一, 船戸充, 金田昭男
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館(招待講演)
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Recombination Dynamics in Nitride Semiconductors by Scanning Near-field Optical Microscopy2012
    • Author(s)
      Y.Kawakami, A.Kaneta, M.Funato
    • Organizer
      5th GCOE Intern.Symp.on Photonics and Electronics Science and Engineering
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-03-08
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 時間分解発光測定による高Al組成AlGaN/AlN量子井戸におけるMott密度の井戸幅依存性の評価2011
    • Author(s)
      岩田佳也, 大音隆男, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] 時間分解発光測定による高Al組成AlGaN/AlN量子井戸におけるMott密度の井戸幅依存性の評価2011
    • Author(s)
      岩田佳也, 大音隆男, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011
    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      2011 SPIE Optics+Photonics
    • Place of Presentation
      California, USA
    • Year and Date
      2011-08-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション2011
    • Author(s)
      船戸充, 川上養一
    • Organizer
      レーザー学会学術講演会第31回年次大会
    • Place of Presentation
      電気通信大学(Invited)
    • Year and Date
      2011-01-10
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Universal behavior of photolumineseence in polar and semipolar InGaN quantum wells revealed by hydrostatic nressure studies2011
    • Author(s)
      T.Suski, G.Staszczak, R.Czernecki, G.Targowski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK(Invited)
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光2011
    • Author(s)
      大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会(講演奨励賞受賞記念講演)
    • Place of Presentation
      神奈川工科大学(招待講演)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] Extremely high internal quantum efficiency from AlGaN/AlN quantum wells2011
    • Author(s)
      R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 窒化物半導体による発光デバイスの最近の展開2011
    • Author(s)
      船戸充, 川上養一
    • Organizer
      平成23年度応用物理学会関西支部シンポジウム「最先端の光研究とその将来」～次世代の光源・材料・デバイス開発の最新動向～
    • Place of Presentation
      島津製作所関西支社マルチホール(招待講演)
    • Year and Date
      2011-11-18
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Extremely high internal quantum efficiency from AlGaN/AlN quantum wells2011
    • Author(s)
      R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] (11-22)GaN基板上への高品質InGaN量子井戸構造の成長2011
    • Author(s)
      西中淳一, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy2011
    • Author(s)
      Y.Kawakami, A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato
    • Organizer
      2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device
    • Place of Presentation
      Granada, Spain(Invited)
    • Year and Date
      2011-03-18
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011
    • Author(s)
      A.Kaneta, M.Funato, Y.Kawakami
    • Organizer
      2011 Optics+Photonics
    • Place of Presentation
      California, USA(Invited)
    • Year and Date
      2011-08-25
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy2011
    • Author(s)
      Y.Kawakami, A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato
    • Organizer
      2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device
    • Place of Presentation
      Granada, Spain
    • Year and Date
      2011-03-18
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光2011
    • Author(s)
      大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(Invited 講演奨励賞受賞記念講演)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Impact of internal quantum efficiency on the droop phenomena studied by scanning near-field optical microscopy in InGaN single quantum wells2011
    • Author(s)
      A.Kaneta, A.Hashiya, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 近接場顕微分光測定によるInGaN量子井戸中のキャリア拡散が効率ドループ現象へ与える影響2011
    • Author(s)
      金田昭男, 橋谷亨, 船戸充, 川上養
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] (11-22)GaN基板上への高品質InGaN量子井戸構造の成長2011
    • Author(s)
      西中淳一, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] Efficient green emission from InGaN quantum wells coherently grown on semipolar (11-22) GaN subatrates2011
    • Author(s)
      J.Nishinaka, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] InGaN/GaN quantum disks and random lasing : toward a quantum dot laser system based on disordered media2011
    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Organizer
      E-MRS
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション2011
    • Author(s)
      船戸充, 川上養一
    • Organizer
      レーザー学会学術講演会第31回年次大会
    • Place of Presentation
      電気通信大学(招待講演)
    • Year and Date
      2011-01-10
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      Intern.workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA
    • Year and Date
      2010-09-22
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] 高Al組成AlGaN/AlN量子井戸の選択励起条件下における時間分解フォトルミネッセンス2010
    • Author(s)
      岩田佳也, 大音隆男, 金田昭男, Ryan Bonal, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] デュアルプローブ近接場光学顕微鏡を用いたInGaN/GaN SQWのキャリアダイナミクスの可視化2010
    • Author(s)
      橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Weak carrier/exciton localization in InGaN SQW for higher emission efficiency grown on{20-21}GaN substrate2010
    • Author(s)
      Y.S.Kim, A.Kaneta, M.Funato, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] Weak carrier/exciton localization in InGaN SQW for higher emission efficiency grown on {20-21} GaN substrate2010
    • Author(s)
      Y.S.Kim, A.Kaneta, M.Funato, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] Photoluminescence properties of Al-rich A1GaN/A1N SQWs2010
    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] デュアルプローブ近接場光学顕微鏡を用いたInGaNI/GaN SQWのキャリアダイナミクスの可視化2010
    • Author(s)
      橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] InGaN量子井戸のキャリア拡散ダイナミクスの空間時間分解PL評価 -近接場光学顕微鏡によるEfficiency droop機構の解明-2010
    • Author(s)
      橋谷享, 金田昭男, 船戸充, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069007

  • [Presentation] 無極性面AlGaN/AlN量子井戸の光学特性に関する理論検討2010
    • Author(s)
      小島一信, 山口敦史, 船戸充, 川上養一, 野田進
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21226001

  • [Presentation] 高Al組成AlGaN/AlN量子井戸のMott転移付近のキャリアダイナミクス2010
    • Author(s)
      大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成22年度第1回研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-05-08