Funato Mitsuru 船戸充

… Alternative Names

Mitsuru Funato 船戸充

FUNATO Mitsuru 船戸充

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Researcher Number	70240827
Other IDs
Affiliation (Current)	2025: 京都大学, 工学研究科, 特定教授
Affiliation (based on the past Project Information) *help	2015 – 2024: 京都大学, 工学研究科, 准教授 2015: 京都大学, 工学(系)研究科(研究院), 准教授 2013: 京都大学, 大学院工学研究科, 准教授 2012 – 2013: 京都大学, 工学(系)研究科(研究院), 准教授 2007 – 2011: Kyoto University, 工学研究科, 准教授 … More 2008 – 2010: 京都大学, 大学院・工学研究科, 准教授 2002 – 2006: Kyoto University, Department of Electronic Science and Engineering, Instructor, 工学研究科, 講師 2001: 京都大学, 工学研究科, 助手 2000: 京大, 工学(系)研究科, 助手 1999: 京都大学, 大学院・工学研究科, 助手 1995 – 1999: 京都大学, 工学研究科, 助手 1997: 京都大学, 大学院・工学研究科, 助手 1993 – 1994: 京都大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / Medium-sized Section 30:Applied physics and engineering and related fields / 表面界面物性 Except Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Science and Engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Science and Engineering … More / Crystal engineering / Science and Engineering / Applied materials / Electronic materials/Electric materials Less
Keywords	Principal Investigator 結晶成長 / 結晶工学 / 窒化物半導体 / GaAs / 透過型電子顕微鏡 / GaAs-ZnSe / 異族半導体多層構造 / 高効率化 / 可視長波長LED / ScAlMgO4 … More / InリッチInGaN / 光デバイス / へき開性基板 / 発光素子 / 電子・電気材料 / 電気・電子材料 / 紫外光源技術 / 電子材料 / 厚膜InGaN / 偏光 / 発光効率 / 半極性結晶面 / 緑色レーザ / 量子構造 / 薄膜 / 結晶構造 / GaN / 不整合 / 半導体へテロ構造 / 表面エネルギー / ZnSe / 硫黄原子 / バンド不連続量 / Zn(S)Se / 半導体ヘテロ界面 / 原子価不整合 / ヘテロ接合ダイオード / 成長姿態 / マイグレーション / 三次元成長 … More Except Principal Investigator 窒化物半導体 / ZnCdSSe / 近接場分光 / 発光機構解明 / マルチプローブ技術 / 発光ダイナミクス / 非輻射再結合 / 輻射再結合 / 励起子 / 半導体3次元構造 / 深紫外フォトニクス / 深紫外分光 / ワイドギャップ半導体 / MIS / GaP / プラズモニクス / 近接場光学 / 量子ナノ構造 / 先進フォトセンシング / フォトルミネッセンス / 多波長発光 / InGaN / ZnO / 高効率化 / 発光ダイオード / ScAlMgO4基板 / InリッチInGaN / 発光高効率化 / 光空間無線通信 / 次世代照明 / 発光シンセサイザー / ナノ局在物性 / 多波長発光制御 / テーラーメイド光源 / ナノ局在 / 3次元構造 / 多波長発光光源 / 局在光物性 / 新機能発光デバイス / 多波長発光素子 / 光物性評価 / 窒化物特異構造 / 発光制御 / 特異構造 / 顕微分光 / 近接場光学顕微鏡 / 超ワイドギャップ半導体 / optical functions / exciton properties / zinc oxide / artificial arrangement / MOCVD growth / nanodots / nanopatterning / focused ion beam / 光機能 / 励起子物性 / 酸化亜鉛 / 配列制御 / MOCVD成長 / ナノドット / ナノ加工 / 集束イオンビーム / Highly Efficient Emission / Quantum nano-structures / GaN-based semiconductors / Advanced Photo-sensing / Multi-probe Technique / Emission Dynamics / Photoluminescence / Near Field Spectroscopy / 超高発光効率 / 超高効率発光 / spatial dynamics / temporal dynamics / thermal lens spectroscopy / transient grating spectroscopy / nonradiative recombination / radiative recombination / exciton / widegap semiconductor / 熱レイズ法 / 空間ダイナミクス / 時間ダイナミクス / ワイドキャップ半導体 / 時間・空間ダイナミクス / 熱レンズ法 / 過渡グレーティング法 / 近接場工学 / Luminescence Dynamics / Time-resolved spectroscopy / Localization / Low-dimensional Structures / Exciton Molecule / Exciton / Widegap Semiconductors / 局在化 / 多体効果 / 量子ドット / ZnCdSe / 時間分解分光 / 局在 / 低次元構造 / 励起子分子 / current-injection lasing / quantum structure / p-type control / impurity doping / growth processes / photocatalysis / 励起子発光寿命 / 欠陥制御 / 反応素過程 / 電流注入レーザ発振 / 量子構造 / p型伝導性制御 / 不純物添加 / 反応過程 / 光触媒反応 / Quantum Well / Moleclar Beam Epitaxy / Ultraviolet Optical Devices / 原子層制御成長 / 量子井戸 / P型伝導度制御 / Gap / 紫外半導体レーザ / 紫外発光ダイオード / 量子井戸構造 / 分子線エピタキシ- / 紫外光デバイス / 走査プローブ顕微鏡 / 光計測 / ナノ構造 / 半導体 / 光物性 / 新規顕微分光応用 / 半導体ナノ構造 / マルチプローブ分光 / 時間空間ダイナミクス / 局在励起子 / InGaNナノ構造 / バイオセンシング応用 / バイオセンシング / 局在発光制御 / バンドギャップ / 窒化アルミニウム / 窒化インジウム / 発光デバイス / 赤外 / 紫外 / 半導体物性 / 結晶成長 / 光デバイス / 誘導放出 / マイクロファセット / 半極性面 / 高品質エピ膜 / Modified MEE法 / 偏光異方性 / 深紫外発光 / 発光マッピング / A1GaN / INGaN / AlGaN / 配向特性 / 多層構造 / 強磁性体薄膜 / 励起子磁気光学効果 Less

Visible, long wavelength LEDs based on In-rich InGaN on ScAlMgO4 substratesPrincipal Investigator
- Principal Investigator
  
  船戸充
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Kyoto University
Light emitting synthesizer : aiming to create the ultimate lighting devices
- Principal Investigator
  
  川上養一
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
ScAlMgO4基板上へのInリッチInGaN系LEDの実現
- Principal Investigator
  
  川上養一
- Project Period (FY)
  2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Kyoto University
近接場分光（SNOM）による特異構造の発光機構解明と制御
- Principal Investigator
  
  川上養一
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
Elucidation and control of carrier recombination processes for the realization of AlGaN-based ultra-high efficiency ultraviolet light emitting devicesPrincipal Investigator
- Principal Investigator
  
  Funato Mitsuru
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Fabrication of nitride-semiconductor-based light-emitters on a reusable substratePrincipal Investigator
- Principal Investigator
  
  Mitsuru Funato
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
深紫外近接場分光による超ワイドギャップ半導体の物性解明
- Principal Investigator
  
  川上養一
- Project Period (FY)
  2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Kyoto University
Achievement of Tailor-made Lighting Sources by the Control of Nanoscopic Carrier Localization in Nitride Semiconductors
- Principal Investigator
  
  Kawakami Yoichi
- Project Period (FY)
  2015 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Crystal engineering
- Research Institution
  Kyoto University
Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics
- Principal Investigator
  
  KAWAKAMI Yoichi
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Development of nitride-semiconductor based green laser diodes on a novel semipolar planePrincipal Investigator
- Principal Investigator
  
  FUNATO Mitsuru
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Assessment and control of radiative/nonradiative recombination processes in In-rich InGaN and in Al-rich AlGaN
- Principal Investigator
  
  KAWAKAMI Yoichi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Development of key technologies for the measurement of luminescence dynamics in the nano-space
- Principal Investigator
  
  KAWAKAMI Yoichi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
The assessment of emission mechanism in GaN-based nano-structures by scanning near-field optical microscopy
- Principal Investigator
  
  KAWAKAMI Yoichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyoto University
Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines
- Principal Investigator
  
  FUJITA Shizuo
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYOTO UNIVERSITY
Study on nonradiative recombination mechanism in widegap semiconductors
- Principal Investigator
  
  KAWAKAMI Yoichi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYOTO UNIVERSITY
表面エネルギー変調エピタキシーによる半導体不整合系へテロ構造の作製Principal Investigator
- Principal Investigator
  
  船戸充
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
半導体/強磁性体薄膜多層構造による励起子磁気光学効果の創出
- Principal Investigator
  
  藤田静雄
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Basic Research for the Fabrication of Light Emitting Devices Utilizing Quantum Confined Exciton Molecules
- Principal Investigator
  
  FUJITA Shigeo
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
原子価不整合系半導体ヘテロ界面の原子層レベル制御とバンド不連続量Principal Investigator
- Principal Investigator
  
  船戸充
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Kyoto University
Dynamics of Semiconductor Vapor Growth with Photocatalytic Surface Reactions
- Principal Investigator
  
  FUJITA Shigeo
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYOTO UNIVERSITY
異族半導体多層構造の作製と界面物性に関する研究Principal Investigator
- Principal Investigator
  
  船戸充
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
異族半導体AlGaAs-ZnSe新人工多層構造の作製と新物性に関する研究Principal Investigator
- Principal Investigator
  
  船戸充
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyoto University
Epitaxial Growth of Novel II-VI Semiconductor Alloys for Ultraviolet Optical Devices
- Principal Investigator
  
  FUJITA Shigeo
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYOTO UNIVERSITY

[Book] ワイドギャップ半導体－あけぼのから最前線へー　第3.3章「半極性・半極性面上新規高効率発光デバイス」pp.222-2322013
- Author(s)
  船戸充，川上養一（分担執筆）
- Total Pages
  11
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-21226001
[Book] 窒化物基板および格子整合基板の成長とデバイス特性2009
- Author(s)
  船戸充, 川上養一
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PLANNED-18069007
[Book] 窒化物基板および格子整合基板の成長とデバイス特性2009
- Author(s)
  船戸充, 川上養一
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-19206036
[Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Ouantum Wells". Advances in Light Emitting Materials, Materials Science Forum2008
- Author(s)
  Y. Kawakami. A. Kaneta and M. Funato(分担執筆)
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PLANNED-18069007
[Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nontpolar Surfaces : Growth, Properties, and Devices edited by Tanya Paskova2008
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai (分担執筆)
- Publisher
  WILEY-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PROJECT-19206036
[Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nonoolar Surfaces : Growth. Properties, and Devices edited by Tanya Paskova2008
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai (分担執筆)
- Publisher
  WILEY-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PROJECT-18206002
[Book] Semipolar InGaN/GaN quantum wells for highly functional light emitters, Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova2008
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Publisher
  WILEY-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PROJECT-19206036
[Book] "Semipolar InGaN/GaN quantum wells for highly functional light emitters", Nitrides with Nonpolar Surfaces : Growth, Properties, and Devices edited by Tanya Paskova2008
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa and T. Mukai(分担執筆)
- Publisher
  WILEY-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PLANNED-18069007
[Book] Assessment and control of recombination dynamics in In_xGa_<1-x>N-based quantum wells, (Materials Sci. Forum 590)2008
- Author(s)
  Y. Kawakami, A. Kaneta, and M. Funato
- Publisher
  Advances in Light Emitting Materials ed. by B. Monemar
- Data Source
  KAKENHI-PROJECT-18206002
[Book] "Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells", Advances in Light Emitting Materials, Materials Science Forum Vol.5902008
- Author(s)
  Y. Kawakami, A. Kaneta and M. Funato (分担執筆)
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PLANNED-18069007
[Book] Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells, Advances in Light Emitting Materials, Materials Science Forum2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PROJECT-19206036
[Book] Nitrides with Nonpolar Surfaces : Growth, Properties, and Devices edited by T.Paskova, WILEY-VCH2008
- Author(s)
  M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai(分担執筆)
- Publisher
  Semipolar InGaN/GaN quantum wells for highly functional light emitters
- Data Source
  KAKENHI-PLANNED-18069007
[Book] Materials Science Forum 590, Trans Tech Publications2008
- Author(s)
  Y.Kawakami, A.Kaneta, M.Funato(分担執筆)
- Publisher
  Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells Advances in Light Emitting Materials
- Data Source
  KAKENHI-PLANNED-18069007
[Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Ouantum Wells". Advances in Light Emitting Materials. Materials Science Forum2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato (分担執筆)
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PROJECT-18206002
[Book] "Assessment and Modification of Recombination Dynamics in In_xGa_<1-x>N-Based Quantum Wells". Advances in Light Emitting Materials Materials Science Forum2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato (分担執筆)
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PROJECT-19206036
[Book] Semipolar InGaN/GaN quantum wells for highly functional light emitters2008
- Author(s)
  M. Funato, Y. Kawakami Y. Narukawa and T. Mukai(分担執筆)
- Publisher
  Nitrides with Nonpolar Surfaces:Growth, Properties, and Devices edited by Tanya Paskova,WILEY-VCH Verlag GmbH &amp ; Co. KGaA
- Data Source
  KAKENHI-PROJECT-18206002
[Book] O Plus E 2005年12月号特集近接場光とナノデバイス(分担執筆)「近接場分光によってInGaNナノ構造の発光機構に追る」2005
- Author(s)
  金田昭男, 船戸充, 川上養一, 成川幸男, 向井孝志
- Publisher
  新技術コミュニケーションズ
- Data Source
  KAKENHI-PROJECT-15206033
[Book] O Plus E 2005年12月号特集近接場光とナノデバイス(分担執筆) 「近接場分光によってInGaNナノ構造の発光機構に迫る」2005
- Author(s)
  金田昭男, 船戸充, 川上養一, 成川幸男, 向井孝志(分担執筆)
- Publisher
  新技術コミュニケーションズ
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Radiative and nonradiative recombination processes in AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire from 10 to 500 K2024
- Author(s)
  R. Ishii, S. Tanaka, N. Susilo, T. Wernicke, M. Kneissl, M. Funato, and Y. Kawakami
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: - Issue: 11 Pages: 24000181-9
- DOI
  10.1002/pssb.202400018
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-23K26560
[Journal Article] Confinement of excitons within GaN 1D nanoarchitectures formed on AlN molecular steps2024
- Author(s)
  M. Funato, H. Kobayashi, and Y. Kawakami
- Journal Title
  
  Adv. Opt. Mater.
  
  Volume: - Issue: 12
- DOI
  10.1002/adom.202302506
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Deep-ultraviolet luminescence properties of AlN2024
- Author(s)
  R. Ishii, A. Yoshikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Physica Status Solidi, RRL
  
  Volume: - Issue: 11 Pages: 24000171-10
- DOI
  10.1002/pssr.202400017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-23K26560
[Journal Article] Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by depositing oxide thin films and ultraviolet light irradiations2023
- Author(s)
  S. Kaito, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, and K. Okamoto
- Journal Title
  
  Research Square
  
  Volume: -
- DOI
  10.21203/rs.3.rs-2515057/v1
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters2023
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 16 Issue: 1 Pages: 015511-015511
- DOI
  10.35848/1882-0786/acb2af
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K14613, KAKENHI-PROJECT-20H05622
[Journal Article] Interface formation mechanism of GaN on Al-pretreated ScAlMgO<sub>4</sub> (0001) substrates2023
- Author(s)
  Fukui Takato、Matsuda Yoshinobu、Matsukura Makoto、Kojima Takahiro、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 23 Issue: 4 Pages: 2739-2744
- DOI
  10.1021/acs.cgd.2c01525
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04661
[Journal Article] Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra2023
- Author(s)
  Matsuda Yoshinobu、Umemoto Ryunosuke、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Scientific Reports
  
  Volume: 13 Issue: 1 Pages: 12665-12665
- DOI
  10.1038/s41598-023-39791-2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K14613, KAKENHI-PROJECT-20H05622
[Journal Article] Revisiting the substitutional Mg acceptor binding energy of AlN2023
- Author(s)
  R. Ishii, A. Yoshikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Phys. Rev. B
  
  Volume: 108 Issue: 3 Pages: 0352051-10
- DOI
  10.1103/physrevb.108.035205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-23K26560
[Journal Article] Improved internal quantum efficiencies of far-UVC AlGaN/AlN quantum wells by the use of semipolar r-planes2023
- Author(s)
  R. Akaike, M. Funato, and Y. Kawakami
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 122 Issue: 13
- DOI
  10.1063/5.0142138
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21J15559
[Journal Article] A review of three-dimensional structure-controlled InGaN quantum wells for efficient visible polychromatic light emitters2023
- Author(s)
  Funato Mitsuru、Matsuda Yoshinobu、Kawakami Yoichi
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 39 Issue: 1 Pages: 013002-013002
- DOI
  10.1088/1361-6641/ad12de
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K14613, KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21H04661
[Journal Article] Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures2023
- Author(s)
  Matsuda Yoshinobu、Sakaki Atsushi、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 123 Issue: 24 Pages: 241105-241105
- DOI
  10.1063/5.0175071
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K14613, KAKENHI-PROJECT-20H05622
[Journal Article] Enhancement of the bandgap emission from GaN epilayer by surface plasmon resonance in the quadrupole oscillation mode using Ag nanoparticles protected by an oxide thin film2023
- Author(s)
  S. Kaito, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, K. Okamoto
- Journal Title
  
  Applied Physics Letters
  
  Volume: 122 Issue: 15
- DOI
  10.1063/5.0143725
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K19218, KAKENHI-PROJECT-20H05622
[Journal Article] プラズモニクスに基づくIII-V族窒化物半導体の高効率緑色発光2023
- Author(s)
  岡本晃一, 垣内晴也, 亀井勇希, 松山哲也, 和田健司, 船戸充, 川上養一
- Journal Title
  
  レーザー研究
  
  Volume: 51 Pages: 97-102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: Demonstration of far-red LEDs2023
- Author(s)
  M. Funato, K. Maehara, Y. Matsuda, T. Ozaki, and Y. Kawakami
- Journal Title
  
  Proceedings of SPIE Photonics West 2023
  
  Volume: 12421 Pages: 1242102-1242102
- DOI
  10.1117/12.2649997
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21H04661
[Journal Article] Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures2022
- Author(s)
  Y. Matsuda, S. Funato, M. Funato, and Y. Kawakami
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 15 Issue: 10 Pages: 105503-105503
- DOI
  10.35848/1882-0786/ac934e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K14613, KAKENHI-PROJECT-20H05622
[Journal Article] Stimulated emission mechanism of aluminum nitride2022
- Author(s)
  R. Ishii, T. Nagashima, R. Yamamoto, T. Hitomi, M. Funato, and Y. Kawakami
- Journal Title
  
  Phys. Rev. B
  
  Volume: 105 Issue: 20 Pages: 1-9
- DOI
  10.1103/physrevb.105.205206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615
[Journal Article] Metalorganic vapor phase epitaxy of GaN on 2-inch ScAlMgO4 (0001) substrates2022
- Author(s)
  T. Fukui, T. Sakaguchi, Y. Matsuda, M. Matsukura, T. Kojima, M. Funato, and Y. Kawakami
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: 9 Pages: 090904-090904
- DOI
  10.35848/1347-4065/ac89c2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21H04661
[Journal Article] Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions2022
- Author(s)
  S. Tanaka, R. Ishii, N. Susilo, T. Wernicke, M, Kneissl, M. Funato, and Y. Kawakami
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: 11 Pages: 112002-112002
- DOI
  10.35848/1347-4065/ac94fd
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Optical anisotropy and photo-pumped lasing at ~250 nm from semipolar (1-102) AlxGa1-xN/AlN quantum wells with cleaved mirrors2022
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Phys. Rev. Appl.
  
  Volume: 18 Issue: 4
- DOI
  10.1103/physrevapplied.18.044005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Optical anisotropy of (11-23) semipolar InGaN quantum wells homoepitaxially grown on GaN substrates2022
- Author(s)
  M. Funato, Y. Matsuda, K. Mori, A. A. Yamaguchi, H. Goto, Y. Sumida, Y. Ishihara, and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 7 Pages: 074502-074502
- DOI
  10.1063/5.0081815
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21H04661
[Journal Article] Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy2021
- Author(s)
  R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
- Journal Title
  
  Optics Express
  
  Volume: 29 Issue: 15 Pages: 22847-22854
- DOI
  10.1364/oe.428421
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615
[Journal Article] Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems2021
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Semiconductor Science & Technology
  
  Volume: 36 Issue: 8 Pages: 085016-085016
- DOI
  10.1088/1361-6641/ac0d95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction2021
- Author(s)
  A. Kafar, A. Sakaki, R. Ishii, S. Stanczyk, K. Gibasiewicz, Y. Matsuda, D. Schiavon, S. Grzanka, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
- Journal Title
  
  Photonics Research
  
  Volume: 9 Issue: 3 Pages: 299-307
- DOI
  10.1364/prj.411701
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-19H02615
[Journal Article] Singularity structures for sub-250-nm emissions from AlGaN-based semiconductors2021
- Author(s)
  M. Funato and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 12 Pages: 120501-120501
- DOI
  10.35848/1347-4065/ac2f1e
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Bias-dependent time-resolved photoluminescence spectroscopy on 265-nm AlGaN-based LEDs on AlN substrates2021
- Author(s)
  R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 2 Pages: 020903-020903
- DOI
  10.35848/1347-4065/abd91d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615
[Journal Article] Enhanced nonradiative recombination in AlGaN-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction2021
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 3 Pages: 031007-031007
- DOI
  10.35848/1882-0786/abe658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332
[Journal Article] Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle2021
- Author(s)
  A. Kafar,A. Sakaki,R. Ishii,K. Shojiki,S. Stanczyk,K. Gibasiewicz,G. Staszczak,L. Marona,D. Schiavon,S. Grzanka,S. Krukowski,T. Suski,P. Perlin,M. Funato,Y. Kawakami
- Journal Title
  
  Optical Materials Express
  
  Volume: 12 Issue: 1 Pages: 119-135
- DOI
  10.1364/ome.445043
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15025, KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-21H04661, KAKENHI-PROJECT-19H02615
[Journal Article] Impact of the positive electron-hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN2021
- Author(s)
  R. Ishii, A. Yoshikawa, H. Kobayashi, M. Funato, and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 8 Pages: 080901-080901
- DOI
  10.35848/1347-4065/ac15ae
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615
[Journal Article] Growth evolution of polar-plane-free faceted GaN structures on (11-22) and (-1-12-2) GaN substrates2021
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 129 Issue: 16
- DOI
  10.1063/5.0047657
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Control of p-type conductivity at AlN surfaces by carbon doping2020
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 1 Pages: 015512-015512
- DOI
  10.7567/1882-0786/ab6589
- NAID
  210000157912
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-18J11081
[Journal Article] Lattice relaxation in semipolar AlGaN grown on (1-102) AlN substrates2020
- Author(s)
  R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 6 Pages: 061008-061008
- DOI
  10.35848/1882-0786/ab9183
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332
[Journal Article] Long-range electron-hole exchange interaction in aluminum nitride2020
- Author(s)
  R. Ishii, M. Funato, and Y. Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 102 Issue: 15 Pages: 1-5
- DOI
  10.1103/physrevb.102.155202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-19H02615
[Journal Article] 265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions2020
- Author(s)
  R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 10 Pages: 102005-102005
- DOI
  10.35848/1882-0786/abb86f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-19H02615
[Journal Article] Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates2020
- Author(s)
  R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 12 Pages: 125014-125014
- DOI
  10.1063/5.0024179
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-19H02615
[Journal Article] Deposition of carbon-containing hole injection layers on p-type Al0.8Ga0.2N grown by metalorganic vapor phase epitaxy2020
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 6 Pages: 062101-062101
- DOI
  10.1063/5.0017703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-16H02332
[Journal Article] Radiative recombination efficiency of AlGaN quantum wells: do we estimate it accurately in a proper way?2020
- Author(s)
  Y. Kawakami, M. Funato, and R. Ishii
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 53 Issue: 50 Pages: 503001-503001
- DOI
  10.1088/1361-6463/aba64c
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-19H02615
[Journal Article] Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (-1-12-2) semipolar planes2020
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 21
- DOI
  10.1063/5.0029292
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05622
[Journal Article] Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes2020
- Author(s)
  A. Kafar, R. Ishii, K. Gibasiewicz, Y. Matsuda, S. Stanczyk, D. Schiavon, S. Grzanka, M. Tano, A. Sakaki, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
- Journal Title
  
  Optics Express
  
  Volume: 28 Issue: 15 Pages: 22524-22539
- DOI
  10.1364/oe.394580
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-20H00351, KAKENHI-PROJECT-19H02615
[Journal Article] Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells2019
- Author(s)
  K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 12 Pages: 125342-125342
- DOI
  10.1063/1.5125799
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-19H02615
[Journal Article] AlxGa1-xN -based quantum wells fabricated on macrosteps effectively suppressing nonradiative recombination2019
- Author(s)
  M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] AlxGa1-xN -based quantum wells fabricated on macrosteps effectively suppressing nonradiative recombination2019
- Author(s)
  M. Hayakawa, S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 7
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Pushing the limits of deep-ultraviolet scanning near-field optical microscopy2019
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Journal Title
  
  APL Photonics
  
  Volume: 4 Issue: 7 Pages: 070801-070801
- DOI
  10.1063/1.5097865
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-19H02615
[Journal Article] Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy2019
- Author(s)
  R. Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 1 Pages: 010904-010904
- DOI
  10.7567/1347-4065/aaef3e
- NAID
  210000135251
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26220903, KAKENHI-PROJECT-16H03861, KAKENHI-PROJECT-17H04810, KAKENHI-PROJECT-16H06326
[Journal Article] Micro-photoluminescence mapping of surface plasmon-coupled emission from InGaN/GaN quantum wells2019
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB31-SCCB31
- DOI
  10.7567/1347-4065/ab07ae
- NAID
  210000156116
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-18H01903
[Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2019
- Author(s)
  船戸充, 市川修平, 川上養一
- Journal Title
  
  京都大学物性科学センター誌,
  
  Volume: 33 Pages: 10-17
- NAID
  120006773146
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Broadband ultraviolet emission from 2D arrays of AlGaN microstructures grown on the patterned AlN templates2019
- Author(s)
  K. Kataoka, M. Funato and Y. Kawakami
- Journal Title
  
  physica status solidi (a)
  
  Volume: 216 Issue: 7 Pages: 1900764-1900764
- DOI
  10.1002/pssa.201900764
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-16H02332
[Journal Article] Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation2019
- Author(s)
  A. Sakaki, M. Funato, M. Miyano, T. Okazaki, and Y. Kawakami
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1
- DOI
  10.1038/s41598-019-39086-5
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2019
- Author(s)
  船戸充, 市川修平, 川上養一
- Journal Title
  
  京都大学物性科学センター誌
  
  Volume: 33 Pages: 10-17
- NAID
  120006773146
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02332
[Journal Article] Red-emitting InxGa1-xN/InyGa1-yN quantum wells grown on lattice-matched InyGa1-yN /ScAlMgO4(0001) templates2019
- Author(s)
  T.　Ozaki, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 1 Pages: 011007-011007
- DOI
  10.7567/1882-0786/aaf4b1
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells2019
- Author(s)
  K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 5 Pages: 052016-052016
- DOI
  10.7567/1882-0786/ab0911
- NAID
  210000135662
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-18H01903
[Journal Article] Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates2019
- Author(s)
  S. Ichikawa, M. Funato and Y. Kawakami
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 522 Pages: 68-77
- DOI
  10.1016/j.jcrysgro.2019.06.010
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Self-limiting growth of ultrathin GaN/AlN quantum wells for highly efficient deep ultraviolet emitters2019
- Author(s)
  H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 7 Issue: 21 Pages: 1900860-1900860
- DOI
  10.1002/adom.201900860
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Synchrotron radiation microbeam X-ray diffraction for nondestructive assessments of local structural properties of faceted InGaN/GaN quantum wells2018
- Author(s)
  Sakaki Atsushi、Funato Mitsuru、Kawamura Tomoaki、Araki Jun、Kawakami Yoichi
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 3 Pages: 031001-031001
- DOI
  10.7567/apex.11.031001
- NAID
  210000136115
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定2018
- Author(s)
  船戸充, 市川修平, 川上養一
- Journal Title
  
  京都大学物性科学センター誌
  
  Volume: 33 Pages: 10-17
- NAID
  120006773146
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Dominant nonradiative recombination paths and their activation processes in AlxGa1-xN-related materials2018
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Physical Review Applied
  
  Volume: 10
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes2018
- Author(s)
  R. Akaike, S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 6 Pages: 061001-061001
- DOI
  10.7567/apex.11.061001
- NAID
  210000136213
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Dominant nonradiative recombination paths and their activation processes in AlxGa1-xN-related materials2018
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami,
- Journal Title
  
  Physical Review Applied
  
  Volume: 10 Issue: 6 Pages: 064027-064027
- DOI
  10.1103/physrevapplied.10.064027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Growth mechanism of polar-plane-free faceted InGaN quantum wells2018
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E101-C Pages: 532-536
- NAID
  130007386831
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Growth mechanism of polar-plane-free faceted InGaN quantum wells2018
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E101-C Pages: 532-536
- NAID
  130007386831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Alx Ga1-xN-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination2018
- Author(s)
  Hayakawa Minehiro、Ichikawa Shuhei、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 7 Issue: 2 Pages: 1801106-1801106
- DOI
  10.1002/adom.201801106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02332
[Journal Article] Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE2017
- Author(s)
  Katsuhiro Kishimoto、Mitsuru Funato、Yoichi Kawakami
- Journal Title
  
  Crystals
  
  Volume: 7 Issue: 5 Pages: 123-123
- DOI
  10.3390/cryst7050123
- NAID
  120006318891
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Plasmonics toward high efficiency LEDs from the visible to the deep UV region2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada
- Journal Title
  
  Proceedings of SPIE Photonics West 2017
  
  Volume: 101240
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Origin of temperature-induced luminescence peak shifts from semipolar (112￣2) InxGa1?xN quantum wells2017
- Author(s)
  Ozaki Takuya、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Physical Review B
  
  Volume: 96 Issue: 12
- DOI
  10.1103/physrevb.96.125305
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
- Author(s)
  M. Funato, S. Ichikawa, K. Kumamoto, and Y. Kawakami
- Journal Title
  
  Proceedings of SPIE Photonics West 2017
  
  Volume: 101040 Pages: 101040I-101040I
- DOI
  10.1117/12.2254797
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-14J02639
[Journal Article] High-efficiency light emission by means of exciton-surface-plasmon coupling2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, and K. Tamada
- Journal Title
  
  J. Photochemistry and Photobiology C: Photochemistry Reviews
  
  Volume: 32 Pages: 58-77
- DOI
  10.1016/j.jphotochemrev.2017.05.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289109, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells2017
- Author(s)
  Kataoka Ken、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 12 Pages: 121001-121001
- DOI
  10.7567/apex.10.121001
- NAID
  210000136026
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Plasmonics toward high efficiency LEDs from the visible to the deep UV region2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada
- Journal Title
  
  Proceedings of SPIE Photonics West 2017 (invited paper)
  
  Volume: 10124
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Polychromatic emission from polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
- Author(s)
  Matsuda Yoshinobu、Funato Mitsuru、Kawakami Yoichi
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 7 Pages: 071003-071003
- DOI
  10.7567/apex.10.071003
- NAID
  210000135899
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] Micro-photoluminescence mapping of surface plasmon enhanced light emissions from InGaN/GaN quantum wells2017
- Author(s)
  K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 17 Pages: 172105-172105
- DOI
  10.1063/1.4998798
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289109, KAKENHI-PROJECT-15H05732
[Journal Article] Heteroepitaxy mechanisms of AlN on nitridated c- and a-plane sapphire substrates2017
- Author(s)
  M. Funato, M. Shibaoka, and Y. Kawakami
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 8 Pages: 085304-085304
- DOI
  10.1063/1.4977108
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H02332, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] Deep ultraviolet polychromatic emission from three-dimensionally structured AlGaN quantum wells2017
- Author(s)
  K. Kataoka, M. Funato, and Y. Kawakami
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 10 Issue: 3 Pages: 031001-031001
- DOI
  10.7567/apex.10.031001
- NAID
  210000135777
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada
- Journal Title
  
  SPIE Proceedings
  
  Volume: 10124 Pages: 101240R-101240R
- DOI
  10.1117/12.2249589
- Data Source
  KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26289109
[Journal Article] Control of crystal morphologies and interface structures of AlN grown on sapphire by elementary source vapor phase epitaxy2016
- Author(s)
  P.-T. Wu, K. Kishimoto, M. Funato, and Y. Kawakami
- Journal Title
  
  Cryst.　Growth 　&　 Design
  
  Volume: 16 Issue: 11 Pages: 6337-6342
- DOI
  10.1021/acs.cgd.6b00979
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332
[Journal Article] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
- Journal Title
  
  Proceedings of SPIE Nanoscience + Engineering 2016
  
  Volume: 9363 Pages: 99260S-99260S
- DOI
  10.1117/12.2237606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-16H02332, KAKENHI-PROJECT-14J02639
[Journal Article] クリーンプロセスによるAlNバルク結晶の成長2016
- Author(s)
  岸元克浩, 呉珮岑, 船戸充, 川上養一
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: 116
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112-2) GaN substrates2016
- Author(s)
  J. Nishinaka, M. Funato, R. Kido and Y. Kawakami
- Journal Title
  
  Phys. Status Solidi B
  
  Volume: 253 Issue: 1 Pages: 78-83
- DOI
  10.1002/pssb.201552336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016
- Author(s)
  T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016
- Author(s)
  T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Impact of radiative and nonradiative recombination processes on the efficiency-droop phenomenon in InGaN single quantum wells studied by scanning near-field optical microscopy2016
- Author(s)
  Y. Kawakami, A. Kaneta, A. Hashiya, and M. Funato
- Journal Title
  
  Phys. Rev. Applied
  
  Volume: 6 Issue: 4
- DOI
  10.1103/physrevapplied.6.044018
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: 116
- Data Source
  KAKENHI-PLANNED-16H06426
[Journal Article] Evaluating the well-to-well distribution of radiative recombination rates in semipolar (11-22) InGaN multiple-quantum-well light-emitting diodes2016
- Author(s)
  M. Funato, K. Matsufuji, and Y. Kawakami
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 9 Issue: 7 Pages: 072102-072102
- DOI
  10.7567/apex.9.072102
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732
[Journal Article] クリーンプロセスによるAlNバルク結晶の成長2016
- Author(s)
  岸元克浩, 呉珮岑, 船戸充, 川上養一
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: 116
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: 116
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells2015
- Author(s)
  M. Funato, Ryan G. Banal, and Y. Kawakami
- Journal Title
  
  AIP Advances
  
  Volume: 5 Issue: 11
- DOI
  10.1063/1.4935567
- NAID
  120005712947
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy2015
- Author(s)
  PeiTsen Wu, M. Funato and Y. Kawakami
- Journal Title
  
  Scientific Reports
  
  Volume: 5 Issue: 1
- DOI
  10.1038/srep17405
- NAID
  120005712946
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] InGaN-based visible light-emitting diodes on ScAlMgO4(0001) substrates2015
- Author(s)
  T. Ozaki, M. Funato and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 6 Pages: 062101-062101
- DOI
  10.7567/apex.8.062101
- NAID
  210000137539
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05732
[Journal Article] Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)2013
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 6 Pages: 62604-62604
- DOI
  10.7567/apex.6.062604
- NAID
  10031181971
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-24360009
[Journal Article] Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures2013
- Author(s)
  R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
- Journal Title
  
  Optical Materials Express
  
  Volume: 3 Pages: 47-53
- NAID
  120005540813
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Crack-free thick AlN films obtained by NH3 nitridation of sapphire substrates2013
- Author(s)
  R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JB21-08JB21
- DOI
  10.7567/jjap.52.08jb21
- NAID
  210000142615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Optical gain spectra of a (0001) InGaN green laser diode2013
- Author(s)
  M. Funato, Y. S. Kim, Y. Ochi, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 12 Pages: 122704-122704
- DOI
  10.7567/apex.6.122704
- NAID
  210000136903
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Heteroepitaxy between wurtzite and corundum materials2013
- Author(s)
  Y. Hayashi, R. G. Banal, M. Funato and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Issue: 18
- DOI
  10.1063/1.4804328
- NAID
  120005439697
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure2013
- Author(s)
  M. Funato, Y. S. Kim, T. Hira, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 11 Pages: 111002-111002
- DOI
  10.7567/apex.6.111002
- NAID
  210000136844
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Huge electron-hole exchange interaction in aluminum nitride2013
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 87 Issue: 16
- DOI
  10.1103/physrevb.87.161204
- NAID
  120005244911
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Grain size dependence of surface plasmon enhanced photoluminescence2013
- Author(s)
  X. Xu, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
- Journal Title
  
  Optics Express
  
  Volume: 21 Pages: 3145-3151
- NAID
  120005540812
- URL
  http://www.opticsinfobase.org/oe/search2.cfm?reissue=J&journalList=4&fullrecord=Grain+size+dependence+of+surface+plasmon+enhanced+photoluminescence&basicsearch=Go
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress2013
- Author(s)
  R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 87 Issue: 23
- DOI
  10.1103/physrevb.87.235201
- NAID
  120005296104
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Two-photon absorption induced anti-stokes emission in single InGaN/GaN quantum-dot-like objects2013
- Author(s)
  R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
- Journal Title
  
  Physica Status Solidi-Rapid Research Letters
  
  Volume: 7 Issue: 5 Pages: 344-347
- DOI
  10.1002/pssr.201307067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-24000013, KAKENHI-PROJECT-24310106
[Journal Article] Strong optical polarization in nonpolar (1-100) Al_xGa_<1-x>N/AlN quantum wells2013
- Author(s)
  M. Funato, K. Matsuda, R. G. Banal, R. Ishii and Y. Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 87 Issue: 4
- DOI
  10.1103/physrevb.87.041306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00368, KAKENHI-PROJECT-11J00290, KAKENHI-PROJECT-21226001
[Journal Article] Instrumentation for dual-probe scanning near-field optical microscopy2012
- Author(s)
  A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
- Journal Title
  
  Review of scientific instruments
  
  Volume: 83 Issue: 8 Pages: 1-11
- DOI
  10.1063/1.4737883
- NAID
  120005439698
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003
[Journal Article] Homoepitaxy and photoluminescence properties of (0001) AIN2012
- Author(s)
  M. Funato, K. Matsuda, R. G. Banal, R. Ishii, Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 8 Pages: 082001-082001
- DOI
  10.1143/apex.5.082001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J00290, KAKENHI-PROJECT-21226001
[Journal Article] Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells2012
- Author(s)
  T. Suski, G. Staszczak, S. P. Lepkowski, P. Perlin , R. Czernecki, I. Grzegory, M. Funato and Y. Kawakami
- Journal Title
  
  Physica Status Solidi {B}
  
  Volume: 249 Pages: 476-479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {20-21} GaN substrate probed by scanning near-field optical microscopy2012
- Author(s)
  A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 10 Pages: 1-3
- DOI
  10.1143/apex.5.102104
- NAID
  10031117546
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003
[Journal Article] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates2012
- Author(s)
  Y. S. Kim, A. Kaneta, M. Funato and Y. Kawakami
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 112 Pages: 71-74
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy2012
- Author(s)
  R. Fujimoto, A. Kaneta, K. Okamoto, M. Funato and Y. Kawakami
- Journal Title
  
  Applied Surface Science
  
  Volume: 258 Issue: 19 Pages: 7372-7376
- DOI
  10.1016/j.apsusc.2012.04.034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003
[Journal Article] Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells2012
- Author(s)
  J. Nishinaka, M. Funato and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 3
- DOI
  10.1063/1.4739723
- NAID
  120005439699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Semipolar {n-n01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique2012
- Author(s)
  M. Funato, T. Kotani, T. Kondou and Y. Kawakami
- Journal Title
  
  Applied Physics Letters
  
  Volume: 100 Issue: 16
- DOI
  10.1063/1.4704779
- NAID
  120007145038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Different behavior of semipolar and polar InGaN/GaN quantum wells : Pressure studies of photoluminescence2011
- Author(s)
  G.Staszczak, T.Suski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 208 Issue: 7 Pages: 1526-1528
- DOI
  10.1002/pssa.201000975
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Single mode emission and non-stochastic laser system based on disordered point-sized structures : toward a tuneahle random laser2011
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, K.Okamoto, Y.Kawakami, A.Kikuchi, K.Kishino
- Journal Title
  
  Optics Express
  
  Volume: 19 Pages: 9262-9268
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Micromirror arrays to assess luminescent nano-objects2011
- Author(s)
  Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi and K. Kishino
- Journal Title
  
  Review of Scientific Instruments
  
  Volume: 82 Issue: 5
- DOI
  10.1063/1.3589855
- NAID
  120004873774
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001, KAKENHI-PROJECT-23686003
[Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami, A.A.Yamaguchi
- Journal Title
  
  Physical Review B
  
  Volume: 81
- NAID
  120002511392
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] 100mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
- Author(s)
  T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
- Journal Title
  
  Nature Photonics
  
  Volume: 4 Pages: 767-771
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
- Author(s)
  T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
- Journal Title
  
  NaturePhotonics 4
  
  Pages: 767-771
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Strain-induced effects on the electronic band structures in GaN/AlGaN quantum wells : Impact of breakdown of the quasi-cubic approximation in GaN2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
- Author(s)
  M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  J.Appl.Phys. 107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
- Author(s)
  Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi and K. Kishino
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107 Issue: 2
- DOI
  10.1063/1.3280032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
- Author(s)
  R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 81 Issue: 15
- DOI
  10.1103/physrevb.81.155202
- NAID
  120002511392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
- Author(s)
  A. Kaneta, T, Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 3 Issue: 10 Pages: 102102-102102
- DOI
  10.1143/apex.3.102102
- NAID
  10027441078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Physica Status Solidi (C)
  
  Volume: 7 Pages: 2111-2114
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN quantum wells2010
- Author(s)
  T.Oto, R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Physica Status Solidi (C)
  
  Volume: 7 Pages: 1909-1912
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
- Author(s)
  M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Phys.Stat.Solidi (C) 7
  
  Pages: 2111-2114
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {20-21} GaN substrates2010
- Author(s)
  M. Funato, A. Kaneta, Y. Kawakami, Y. Enya, K. Nishizuka, M. Ueno, T. Nakamura
- Journal Title
  
  Appl. Phys. Express 3
- NAID
  10027013275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010
- Author(s)
  K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253764
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20-21} GaN Substrates2010
- Author(s)
  M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
- Journal Title
  
  Applied Physics Express 3
- NAID
  10027013275
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
- Author(s)
  Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
- Journal Title
  
  Journal of Applied Physics 107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: definite breakdown of the quasicubic approximation2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami, A.A.Yamaguchi
- Journal Title
  
  Phys.Rev.B 81
- NAID
  120002511392
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
- Author(s)
  A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
- Journal Title
  
  Appl.Phys.Exp. 3
- NAID
  10027441078
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well2010
- Author(s)
  V.Ramesh, A.Kikuchi, K.Kishino, M.Funato, Y.Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- NAID
  120003386595
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Journal Title
  
  Physical Review B
  
  Volume: 81
- NAID
  120002511392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
- Author(s)
  T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
- Journal Title
  
  Nature Photonics
  
  Volume: 4 Pages: 767-771
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar{20-21}GaN Substrates2010
- Author(s)
  M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
- Journal Title
  
  Applied Physics Express 3
- NAID
  10027013275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells2010
- Author(s)
  M.Funato, M.Ueda, D.Inoue, Y.Kawakamai, Y.Narukawa, T.Mukai
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells2010
- Author(s)
  M.Funato, M.Ueda, D.Inoue, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495062
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010
- Author(s)
  T. Oto, R. G. Banal, K. Kataoka, M. Funato and Y. Kawakami
- Journal Title
  
  Nature Photonics
  
  Volume: 4 Issue: 11 Pages: 767-771
- DOI
  10.1038/nphoton.2010.220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN quantum wells2010
- Author(s)
  T.Oto, R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Physica Status Solidi (C)
  
  Volume: 7 Pages: 1909-1912
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
- Author(s)
  Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi, K. Kishino
- Journal Title
  
  J. Appl. Phys. 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Physica Status Solidi (C)
  
  Volume: 7 Pages: 2111-2114
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010
- Author(s)
  M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar{20-21}GaN Substrates2010
- Author(s)
  M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
- Journal Title
  
  Applied Physics Express 3
- NAID
  10027013275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010
- Author(s)
  K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253764
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
- Author(s)
  A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027441078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
- Author(s)
  Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
- Journal Title
  
  Journal of Applied Physics 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Strain-induced effects on the electronic band structures in GaN/AlGaN quantum wells : Impact of breakdown of the quasi-cubic approximation in GaN2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well2010
- Author(s)
  V.Ramesh, A.Kikuchi, K.Kishino, M.Funato, Y.Kawakami
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- NAID
  120003386595
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010
- Author(s)
  A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027441078
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] 半極性(11-22)面上InGaN量子井戸の光学特性と緑色レーザー実現の可能性2010
- Author(s)
  船戸充, 上田雅也, 小島一信, 川上養一
- Journal Title
  
  レーザー研究 38
  
  Pages: 255-260
- NAID
  10026196641
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Journal Title
  
  J.Appl.Phys. 107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010
- Author(s)
  Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
- Journal Title
  
  Journal of Applied Physics 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x>0.69)2009
- Author(s)
  R. G. Banal, M. Funato, and Y. Kawakami
- Journal Title
  
  Phys. Rev. B 79
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
- Author(s)
  K. Kojima, H. Kamon, M. Funato, Y. Kawakami
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  40016704620
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article]2009
- Author(s)
  船戸充, 川上養一
- Journal Title
  
  窒化物基板および格子整合基板の成長とデバイス特性(シーエムシー出版)
  
  Pages: 104-118
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Growth characteristics of AIN on sapphire substrates by modified migration-enhanced epitaxy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2834-2836
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
- Author(s)
  K.Kojima, H.Kamon, M.Funato, Y.Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016704620
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_<1-x>N/GaN quantum disk2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Journal Title
  
  Physical Review B 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
- Author(s)
  K.Kojima, H.Kamon, M.Funato, Y.Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016704620
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
- Author(s)
  R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi, K. Kishino
- Journal Title
  
  Phys. Rev. B 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2834-2836
- NAID
  120002317421
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009
- Author(s)
  K.Kojima, H.Kamon, M.Funato, Y.Kawakami
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  40016704620
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2834-2836
- NAID
  120002317421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Journal Title
  
  Phys.Rev.B 79
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_(1-x)N/GaN quantum disk2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Journal Title
  
  Physical Review B 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009
- Author(s)
  R.G. Banal, M. Funato, Y. Kawakami
- Journal Title
  
  J. Crystal Growth 311
  
  Pages: 2834-2836
- NAID
  120002317421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009
- Author(s)
  R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi and K. Kishino
- Journal Title
  
  Physical Review B
  
  Volume: 79 Issue: 15
- DOI
  10.1103/physrevb.79.155307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226001
[Journal Article] Optical anisotropy control of non-c-plane InCaN quantum wells2009
- Author(s)
  K.Kojima, H.Kamon, M.Funato, Y.Kawakami
- Journal Title
  
  Japanese Journal of Applied Physics 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_<1-x>N/GaN quantum disk2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi K.Kishino
- Journal Title
  
  Physical Review B 79
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Growth characteristics of AIN on sapphire substrates by modified migration-enhanced epitaxy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2834-2836
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article]2009
- Author(s)
  船戸充, 川上養一
- Journal Title
  
  窒化物基板および格子整合基板の成長とデバイス特性(シーエムシー出版)
  
  Pages: 104-118
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy2008
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Journal Title
  
  Appl.Phys.Lett. 92
- NAID
  120001462530
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
- Author(s)
  A. Kaneta, M. Funato, and Y. Kawakami
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained Quantum wells with potential fluctuations2008
- Author(s)
  M. Funato, Y. Kawakami
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
- Author(s)
  A.Kaneta, M.Funato, Y.Kawakami
- Journal Title
  
  Phys.Rev.B 78
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura. M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Applied Physics Express 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M.Funato, T.Kondou, K.Hayashi, S.Nishiura, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys..Exp. 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers2008
- Author(s)
  M.Ueda, M.Funato, K.Kojima, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Phys.Rev.B 78
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
- Author(s)
  M. Funato and Y. Kawakami
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active lavers2008
- Author(s)
  M. Ueda, M. Funato, K. Kojima, Y. Kawakami. Y. Namkawa, T. Mukai
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
- Author(s)
  M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Appl. Phys. Lett. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Applied Physics Express 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet qauantum wells2008
- Author(s)
  M. Funato, K. Hayashi, M. Ueda, Y. Kawakami. Y. Narukawa, T. Mukai
- Journal Title
  
  Applied Physics Letters 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet, blue, and green spectra2008
- Author(s)
  A. Kaneta, M. Funato and Y. Kawakami
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa and T. Mukai
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
- Author(s)
  M. Funato, Y. Kawakami
- Journal Title
  
  J. Appl. Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Excitonic Properties of Polar, Semipolar, and Nonpolar InGaN/GaN Strained Quantum Wells with Potential Fluctuations2008
- Author(s)
  M. Funato and Y. Kawakami
- Journal Title
  
  J. Appl. Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
- Author(s)
  M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Applied Physics Letters 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
- Author(s)
  M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa and T. Mukai
- Journal Title
  
  Applied Physics Letters 93
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
- Author(s)
  M. Funato, Y. Kawakami
- Journal Title
  
  Journal of Applied Physics 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Appl. Phys. Express 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-18069013
[Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, and T. Mukai
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Excitonic properties of polar, semipolar, and nonpolar InGaN/GaN strained quantum wells with potential fluctuations2008
- Author(s)
  M.Funato, Y.Kawakami
- Journal Title
  
  J.Appl.Phys. 103,
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Nanoscopic recombination processes InGaN/GaN quantum wells emitting violet. blue, and green spectra2008
- Author(s)
  A. Kaneta, M. Funato, Y. Kawakami
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells2008
- Author(s)
  M.Funato, K.Hayashi, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys.Lett. 93
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa and T. Mukai
- Journal Title
  
  Applied Physics Express 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Initial nucleation of AIN grown directly on sapphire substrates by metal-organic vapor phase epitaxy2008
- Author(s)
  R. G. Banal, M. Funato and Y. Kawakami
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
- Journal Title
  
  Appl. Phys. Exp 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Polarization switching phenomena in semipolar In_xGa_<1-x>N/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting2008
- Author(s)
  M. Funato, T. Kondou, K. Hayashi, S. Nishiura, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Appl. Phys. Express 1
- NAID
  10024292227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Emission Color Tunable Light-emitting Diodes Composed of InGaN Multifacet Quantum Wells2008
- Author(s)
  M. Funato, K. Hayashi, M. Ueda, Y. Kawakami, Y. Narukawa, and T. Mukai
- Journal Title
  
  Appl. Phys. Lett 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Optical gain spectra for near UV to aquamarine(A1,In)GaN laser diodes2007
- Author(s)
  K. Kojima, U. T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, and T. Mukai
- Journal Title
  
  Optics Express 15
  
  Pages: 7730-7736
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Optical gain spectra for near UV to aquamarine (A1,In) GaN laser diodes2007
- Author(s)
  K.Kojima, U.T.Schwarz, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai
- Journal Title
  
  Opt.Exp. 15
  
  Pages: 7730-7736
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures2007
- Author(s)
  M. Ueda, M. Funato, and Y. Kawakami, 外4名
- Journal Title
  
  Physica Status Solidi C 4
  
  Pages: 2826-2829
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (11-22) GaN substrate2007
- Author(s)
  K. Kojima, M. funato, Y. Kawakami, S. Masui, S. Nagahama, T. Mukai
- Journal Title
  
  Appl. Phys. Lett. 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
- Author(s)
  Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
- Journal Title
  
  Appl. Phys. Lett 90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Stimulated emission at 474 nm from an InGaN laser diode structuregrown on a(11-22)GaN substrate2007
- Author(s)
  K. Kojima, M. Funato, and Y. Kawakami外3名
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN2007
- Author(s)
  Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN2007
- Author(s)
  Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
- Journal Title
  
  Applied Physics Letter 90
  
  Pages: 2619121-3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
- Author(s)
  Y. Kawakami, M. Funato外5名
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes2007
- Author(s)
  K. Kojima, U.T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama and T. Mukai
- Journal Title
  
  Optics Express 15
  
  Pages: 7730-7736
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN2007
- Author(s)
  K. Kojima, M. Ueda, M. Funato, and Y. Kawakami
- Journal Title
  
  Physica Status Solidi B 244
  
  Pages: 1853-1856
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Comparison between optical gain spectra of In_χ Ga_<1-χ> N/In_0.02Ga_0.98N laser diodes emitting at 404 nm and 470 nm2007
- Author(s)
  K. Kojima, M. Ueda, M. Funato, and Y. Kawakami
- Journal Title
  
  Physica Status Solidi A 204
  
  Pages: 2108-2111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Comparison between optical gain spectra of In_xGa_<1-x>N/In_<0.02>Ga_<0.98>N laser diodes emitting at 404 nm and 470 nm2007
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, H. Braun, U. T. Schwarz, S. Nagahama, and T. Mukai
- Journal Title
  
  Phys. Stat. Sol. (A) 204
  
  Pages: 2108-2111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
- Author(s)
  M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Appl. Phys. Lett. 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Efficient green emission from(11-22)InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
- Author(s)
  Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, and T. Mukai
- Journal Title
  
  Appl. Phys. Lett 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Optical gain spectra for near UV to aquamarine(A1,In)GaN laser diodes2007
- Author(s)
  K. Kojima, M. Funato, and Y. Kawakami外3名
- Journal Title
  
  Optics Express 15
  
  Pages: 7730-7736
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN2007
- Author(s)
  K. Kojima, M. Ueda, M. Funato, Y. Kawakami
- Journal Title
  
  Phys. Stat. Sol. B 224
  
  Pages: 1853-1856
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
- Author(s)
  M. Ueda, M. Funato, and Y. Kawakami, 外4名
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Efficient green emission from (11-22)InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
- Author(s)
  Y.Kawakami, K.Nishizuka, D.Yamada, A.Kaneta, M.Funato, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys.Lett. 90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures2007
- Author(s)
  M. Ueda, K. Hayashi, T. Kondou, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Journal Title
  
  Phys. Stat. Sol. C 4
  
  Pages: 2826-2829
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy2007
- Author(s)
  Y. Kawakami, K. Nishizuka, D. Yamada, A. Kaneta, M. Funato, Y. Narukawa, T. Mukai
- Journal Title
  
  Appl. Phys. Lett. 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Comparison between optical gain spectra of InxGa1-xN/In0. 02Ga0. 98N laser diodes emitting at 404 nm and 470 nm2007
- Author(s)
  K. Kojima, M. funato, Y. Kawakami, H. Braun, U.T. Schwarz, S. Nagahama, T. Mukai
- Journal Title
  
  Phys. Stat. Sol. A 204
  
  Pages: 2108-2111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets2007
- Author(s)
  M. Ueda, T. Kondou, K. Hayashi, M. Funato, Y. Kawakami, Y. Narukawa and T. Mukai
- Journal Title
  
  Applied Physics Letter 90
  
  Pages: 1719071-3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Optical gain spectra for near UV to aquamarine (Al, In) GaN laser diodes2007
- Author(s)
  K. Kojima, U.T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai
- Journal Title
  
  Optics Express 15
  
  Pages: 7730-7736
- Data Source
  KAKENHI-PROJECT-19206036
[Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy2006
- Author(s)
  A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y. Kawakami
- Journal Title
  
  Phys. Stat. Sol 3
  
  Pages: 1897-1901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN qauantum wells by near-field photoluminescence2006
- Author(s)
  A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
- Journal Title
  
  Phys. Stat. Sol.(c) 3・6
  
  Pages: 1897-1901
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy2006
- Author(s)
  A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
- Journal Title
  
  Phys.Stat.Solidi (C) 3
  
  Pages: 1897-1901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Gain suppression phenomena observed in InxGal-xN quantum well laser diodes emitting at 470 nm2006
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
- Journal Title
  
  Appl.Phys.Lett. 89
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Carrier Transport and optical properties of InGaN SQW with embedded AlGaN δ-layer2006
- Author(s)
  J. W. Park, A. Kaneta, M. Funato and Y. Kawakami
- Journal Title
  
  IEEE J. Quantum Electron 42
  
  Pages: 1023-1030
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Gain suppression phenomena observed in InxGal-xN quantum well laser diodes emitting at 470 nm2006
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
- Journal Title
  
  Appl. Phys. Lett. 89
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Tailored emission color synthesis using microfacet quantum wells consisting2006
- Author(s)
  M.Funato, T.Kotani, T.Kondou, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys.Lett. 88
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Suppression mechanism of optical gain formation in In_xGa_<1-x>N quantum well structures due to localized carriers2006
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai
- Journal Title
  
  Solid State Communications 140
  
  Pages: 182-184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors2006
- Author(s)
  M.Funato, T.Kotani, T.Kondou, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys.Lett. 88
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar (11-22) GaN bulk substrates2006
- Author(s)
  M.Funato, M.Ueda, Y.Kawakami, Y.Narukawa, T.Kosugi, M.Takahashi, T.Mukai
- Journal Title
  
  Jpn.J.Appl.Phys 45
- NAID
  10017653329
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence2006
- Author(s)
  A, Kaneta, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
- Journal Title
  
  Phys.Stat.Sol.(c) 3
  
  Pages: 1897-1901
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006
- Author(s)
  Y. Kawakami, S. Suzuki, A. Kaneta, M. Funato, A. Kikuchi, and K. Kishino
- Journal Title
  
  Appl. Phys. Lett 89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm2006
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Nagahama, T.Mukai, H.Braun, U.T.Schwarz
- Journal Title
  
  Appl.Phys.Lett. 89
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Epitaxial growth and optical properties of semipolar (11-22) GaN and InGaN/GaN quantum wells on GaN bulk substrates2006
- Author(s)
  M.Ueda, K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Appl.Phys.Lett. 89
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Transport and optical properties of InGaN SQW with embedded AlGaN delta-layer2006
- Author(s)
  J.W.Park, A.Kaneta, M.Funato, Y.Kawakami
- Journal Title
  
  IEEE J. Quantum Electron 42・10
  
  Pages: 1023-1030
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar (11-22) GaN bulk substrates2006
- Author(s)
  M.Funato, M.Ueda, Y.Kawakami, Y.Narukawa, T.Kosugi, M.Takahashi, T.Mukai
- Journal Title
  
  Jpn.J.Appl.Phys.(Express Letter) 45
- NAID
  10017653329
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Direct correlation between nonradiative recombination centers and threading dislocations in In_xGa_<1-x> quantum wells by near field photoluminescence spectroscopy2006
- Author(s)
  A.Kaneta, M.Funato, G.Marutuki, Y.Narukawa, T.Mukai, Y.Kawakami
- Journal Title
  
  Physica Status Solidi (c) (in press)
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Gain suppression phenomena observed in In_xGa_<1-x>N quantum well laser diodes emitting at 470 nm2006
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, H. Braun and U.T. Schwarz
- Journal Title
  
  Appl. Phys. Lett 89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Suppression mechanism of optical gain formation in InxGal-xN quantum well structures due to localized carriers2006
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Solid State Communications 140・3-4
  
  Pages: 182-184
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Suppression mechanism of optical gain formation in InxGal-xN quantum well structures due to localized carriers2006
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Solid State Communications 140・3-4
  
  Pages: 182-184
- Data Source
  KAKENHI-PLANNED-18069007
[Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nanocolumns2006
- Author(s)
  Y.Kawakami, S.Suzuki, A.Kaneta, M.Funato, A.Kikuchi, K.Kishino
- Journal Title
  
  Appl. Phys. Lett. 89
- Data Source
  KAKENHI-PROJECT-18206002
[Journal Article] Efficient rainbow color luminescence from In_xGa_<1_x>N single quantum wells fabricated on {1122} microfacets2005
- Author(s)
  K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Applied Physics Letters 87
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Fabrication and characterization of GaN based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics2005
- Author(s)
  T.Kotani, Y.Hatada, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
- Journal Title
  
  physica status solidi (c) (in press)
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics2005
- Author(s)
  T.Kotani, Y.Hatada, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami, S.Fujita
- Journal Title
  
  Physica Status Solidi (c) 2
  
  Pages: 2895-2898
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Fabrication and characterization of GaN-based distributed Bragg refleeter mirrors for low lasing threshold and integrated photonics2005
- Author(s)
  T.Kotani, Y.Hatada, M.Funato, Y.Nakamura, T.Mukai, Y.Kawakami, S.Fujita
- Journal Title
  
  Physica Status Solidi (c) 2
  
  Pages: 2895-2898
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Efficient rainbow color luminescence from In_xG_<1_x>N single quantum wells fabricated on {112^^-2} microfacets2005
- Author(s)
  K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Applied Physics Letters 87
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Efficient rainbow color luminescence from In_xGa_<1-x>N single quantum wells fabricated on {11-22} microfacets2005
- Author(s)
  K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Journal Title
  
  Applied Physics Letters 87
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Efficient radiative recombination from <1122>-oriented In_xGa_<1-x>N multiple quantum wells fabricated by the re-growth technique2004
- Author(s)
  K.Nishizuka, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami, Sg.Fujita
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 3122-3124
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Efficient radiative recombination from <1122> -oriented InGaN multiple quantum wells fabricated by the re-growth technique2004
- Author(s)
  K.Nishizuka, M.Funato Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 3122-3124
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Optically pumped lasing and gain formation properties in blue In_xGa_<1-x>N MQWs2004
- Author(s)
  K.Kojima, A.Shikanai, K.Omae, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
- Journal Title
  
  Physica Status Solidi (b) 241
  
  Pages: 3676-2680
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Optically pumped lasing and gain formation properties in blue In_xGa_<1_x>N MQWs2004
- Author(s)
  K.Kojima, A.Shikanai, K.Omae, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
- Journal Title
  
  physica status solidi (b) 241
  
  Pages: 2676-2680
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Journal Article] Efficient radiative recombination from <112^^-2> -oriented InGaN multiple quantum wells fabricated by the re-growth technique2004
- Author(s)
  K.Nishizuka, M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai, S.Fujita
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 3122-3124
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206033
[Patent] 発光素子の製造方法及び発光素子2022
- Inventor(s)
  岡本晃一、垣内晴也、松山哲也、和田健司、川上養一、船戸充
- Industrial Property Rights Holder
  公立大学法人大阪、国立大学法人京都大学
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20H05622
[Patent] 発光素子の製造方法及び発光素子2022
- Inventor(s)
  岡本晃一，川上養一，船戸充（ほか3名）
- Industrial Property Rights Holder
  岡本晃一，川上養一，船戸充（ほか3名）
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-014115
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20H05622
[Patent] 発光素子の製造方法及び発光素子2022
- Inventor(s)
  岡本晃一、垣内晴也、松山哲也、和田健司、川上養一、船戸充
- Industrial Property Rights Holder
  公立大学法人大阪、国立大学法人京都大学
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Overseas
- Data Source
  KAKENHI-PROJECT-20H05622
[Patent] 半導体素子及びp型窒化物半導体層の形成方法2022
- Inventor(s)
  岸元克浩, 船戸充, 川上養一, 大前邦途
- Industrial Property Rights Holder
  国立大学法人京都大学, 日亜化学工業株式会社
- Industrial Property Rights Type
  特許
- Acquisition Date
  2022
- Data Source
  KAKENHI-PROJECT-15H05732
[Patent] 半導体発光素子、半導体発光素子の製造方法、LED素子、電子線励起型光源装置2015
- Inventor(s)
  川上養一，船戸　充，片岡　研，山口真典
- Industrial Property Rights Holder
  ウシオ電機株式会社
- Industrial Property Rights Type
  特許
- Filing Date
  2015
- Acquisition Date
  2018
- Data Source
  KAKENHI-PROJECT-15H05732
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2012
- Inventor(s)
  西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Holder
  京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Filing Date
  2012-01-20
- Overseas
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
- Inventor(s)
  西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Holder
  京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Number
  2010-128252
- Filing Date
  2011-12-21
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
- Inventor(s)
  西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Holder
  京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Filing Date
  2011-12-22
- Overseas
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011
- Inventor(s)
  西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Holder
  京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Filing Date
  2011-12-22
- Overseas
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010
- Inventor(s)
  西村活人, 川上養一, 船戸充, 外2名
- Industrial Property Rights Holder
  京都大学,外4名
- Filing Date
  2010-06-21
- Overseas
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 紫外線照射装置2010
- Inventor(s)
  川上養一, 船戸充, 大音隆男, R.G.Banal, 外3名
- Industrial Property Rights Holder
  京都大学, ウシオ電機(株)
- Filing Date
  2010-06-03
- Data Source
  KAKENHI-PLANNED-18069007
[Patent] 紫外線照射装置2010
- Inventor(s)
  岡本晃一, 船戸充, 川上養一, 外2名
- Industrial Property Rights Holder
  京都大学, ウシオ電機(株), 外5名
- Filing Date
  2010-08-03
- Overseas
- Data Source
  KAKENHI-PLANNED-18069007
[Patent] 紫外線照射装置2010
- Inventor(s)
  岡本晃一, 船戸充, 川上養一, 外2名
- Industrial Property Rights Holder
  京都大学, ウシオ電機(株), 外5名
- Filing Date
  2010-08-03
- Overseas
- Data Source
  KAKENHI-PLANNED-18069007
[Patent] 紫外線照射装置2010
- Inventor(s)
  川上養一, 船戸充, 大音隆男, R.G.Banal, 外3名
- Industrial Property Rights Holder
  京都大学, ウシオ電機(株)
- Filing Date
  2010-06-03
- Data Source
  KAKENHI-PLANNED-18069007
[Patent] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010
- Inventor(s)
  西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Holder
  京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
- Industrial Property Rights Type
  特許
- Filing Date
  2010-06-21
- Overseas
- Data Source
  KAKENHI-PROJECT-21226001
[Patent] 窒化物半導体レーザ素子2007
- Inventor(s)
  小島一信, 川上養一, 船戸充, 長濱愼一, 枡井真吾
- Industrial Property Rights Holder
  京都大学,日亜化学工業(株)
- Filing Date
  2007-09-14
- Data Source
  KAKENHI-PROJECT-19206036
[Patent] InGaN量子井戸レーザの作成方法2007
- Inventor(s)
  小島一信, 川上養一, 船戸充外2名
- Industrial Property Rights Holder
  京都大学, 日亜化学工業(株)
- Filing Date
  2007-09-14
- Data Source
  KAKENHI-PROJECT-19206036
[Patent] InGaN量子井戸レーザの作成方法2007
- Inventor(s)
  小島一信, 川上養一, 船戸充, 長濱慎一, 枡井真吾
- Industrial Property Rights Holder
  京都大学, 日亜化学工業(株)
- Filing Date
  2007-09-14
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 長方形状(0001) InGaNマイクロ発光素子における非等方的歪緩和の誘起と面内偏光制御2024
- Author(s)
  市川修平, 松田祥伸, 船戸充, 川上養一, 小島一信
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of (In)GaN on ScAlMgO4 substrates toward long wavelength optical devices2024
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Atomic force microscopy and scanning near-field optical microscopy on single quantum-well InGaN blue LEDs2024
- Author(s)
  Z. Zhang, R. Ishii, K. Shojiki, M. Funato, D. Iida, K. Ohkawa, Y. Kawakami
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 全可視光色をカバーする広帯域発光InGaN系マイクロレンズ構造2024
- Author(s)
  松田祥伸, 高濱章年，船戸充, 川上養一
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of (In)GaN on ScAlMgO4 substrates toward long wavelength optical devices2024
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 超ワイドギャップ半導体光物性評価のための深紫外分光技術の現状と展望2024
- Author(s)
  石井良太, 船戸充, 川上養一
- Organizer
  ワイドギャップ半導体学会第15回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] InGaN表面においてバンドベンディングがキャリア寿命に与える影響2024
- Author(s)
  市川修平, 松田祥伸, 道上平士郎, 船戸充, 川上養一, 小島一信
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Al原料で処理したサファイア基板上への低温緩衝層フリーなGaN成長2023
- Author(s)
  竹村幸大, 福井崇人, 松田祥伸, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 多面体構造上に作製した多波長発光InGaN LEDのデバイス動作特性2023
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 半極性面GaNマイクロレンズ構造上InGaN量子井戸における広帯域発光へのアプローチ2023
- Author(s)
  福重翔吾, 松田祥伸, 船戸充, 川上養一
- Organizer
  電子情報通信学会研究報告
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of high quality GaN on Al-pretreated sapphire substrates without using low temperature buffer layers2023
- Author(s)
  K. Takemura, T. Fukui, Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of high quality GaN on Al-pretreated sapphire substrates without using low temperature buffer layers2023
- Author(s)
  K. Takemura, T. Fukui, Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 自在な発光波長集積を目指したInGaN系多面体構造における局所的オフ角制御2023
- Author(s)
  梅本隆之介, 松田祥伸, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] InGaN-based red emitters fabricated on lattice-matched ScAlMgO4 substrates2023
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  The 23rd Intern. Meeting on Information Display
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ピット密度半極性r面AlGaN薄膜の低圧MOVPE成長2023
- Author(s)
  赤池良太, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 発光スペクトルの電気制御を目指したInGaN系多波長発光構造の設計と作製2023
- Author(s)
  松田祥伸, 宮脇啓嘉, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Enhanced transport of photo-excited carriers in (0001) InGaN photodiodes by introducing compositionally graded layer2023
- Author(s)
  H. Dojo, S. Ichikawa, Y. Matsuda, M. Funato, Y. Kawakami, and K. Kojima
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 半極性面上InGaN系マイクロレンズ構造の広帯域発光に向けた作製条件の検討2023
- Author(s)
  福重翔吾, 松田祥伸, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] {11-22}面GaN基板上InGaN系マイクロレンズ構造における異方的な発光波長分布2023
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Significant improvement of light emission of InGaN/GaN quantum wells by depositing oxide thin films and ultraviolet light irradiations2023
- Author(s)
  K. Okamoto, S. Kaito, Y. Kamei, K. Mitoda, K. Fujioka, T. Niwa, K. Wada, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 誘電体薄膜と紫外レーザー照射を用いたInGaN/GaN量子井戸の高効率発光機構の解明2023
- Author(s)
  三戸田健太，松山哲也，和田健司，船戸充，川上養一，岡本晃一
- Organizer
  日本光学会年次学術講演会 Optics & Photonics Japan 2023
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] GaN/AlN quantum wells on step edge density controlled AlN surface2023
- Author(s)
  K. Shojiki, Y. Yamanaka, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, and H. Miyake
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: Demonstration of far-red LEDs2023
- Author(s)
  M. Funato, Y. Matsuda, and Yoichi Kawakami
- Organizer
  SPIE Photonics West 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] High efficiency photoluminescence of InGaN/GaN quantum wells by depositing dielectric thin films and UV laser irradiation2023
- Author(s)
  K. Mitoda, S. Kaito, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, and K. Okamoto
- Organizer
  The 12th Advanced Lasers and Photon Sources
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] AlNのMgアクセプタ束縛エネルギーについて：理論2023
- Author(s)
  石井良太, 吉川陽, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of GaN without using low-temperature buffer layers2023
- Author(s)
  T. Sakaguchi, K. Takemura, Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  42nd Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上でのInGaN系窒化物半導体の有機金属気相成長2023
- Author(s)
  船戸充, 松田祥伸, 川上養一
- Organizer
  日本学術振興会第R032委員会第13回研究会「ディスプレイ用LEDおよび関連発光材料」
- Invited
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 時間分解二光子光電子分光法によるInGaN (0001)の表面キャリア寿命測定2023
- Author(s)
  市川修平, 松田祥伸, 道上平士郎, 毎田修, 船戸充, 川上養一, 小島一信
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 誘電体薄膜と紫外レーザー照射によるInGaN/GaN量子井戸の高効率発光2023
- Author(s)
  三戸田健太、垣内晴也、松山哲也、和田健司、船戸充、川上養一、岡本晃一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Fundamental optical properties of AlN revealed by deep ultraviolet spectroscopy2023
- Author(s)
  R. Ishii, A. Yoshikawa, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] AlNのMgアクセプタ束縛エネルギーについて：実験2023
- Author(s)
  石井良太, 吉川陽, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Al原料で処理したサファイア基板上への低温緩衝層フリーなGaN成長2023
- Author(s)
  竹村幸大, 福井崇人, 松田祥伸, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 誘電体薄膜と金属ナノ構造を用いたInGaN/GaN量子井戸の高効率発光2023
- Author(s)
  岡本晃一, 垣内晴也, 亀井勇希, 三戸田健太, 藤岡宏輔, 松山哲也, 和田健司, 船戸充, 川上養一
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Hybrid quantum-well InGaN red LEDs studied by correlative micro-photoluminescence spectroscopy2023
- Author(s)
  Z. Zhang, R. Ishii, K. Shojiki, M. Funato, D. Iida, K. Ohkawa, Y. Kawakami
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] InGaN-based LEDs on arbitrary three dimensional GaN templates toward tailored spectral control2023
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Surface carrier lifetime of (0001) InGaN assessed by time-resolved photoemission spectroscopy2023
- Author(s)
  S. Ichikawa, Y. Matsuda, H. Dojo, M. Funato, Y. Kawakami, and K. Kojima
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 時間分解光電子分光法による (0001) InGaN表面のキャリア寿命評価2023
- Author(s)
  市川修平, 松田祥伸, 道上平士郎, 船戸充, 川上養一, 小島一信
- Organizer
  第43回ナノテスティングシンポジウム
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 自在な電気的スペクトル変調に向けたInGaN系広帯域発光構造の設計と作製2023
- Author(s)
  宮脇啓嘉, 松田祥伸, 船戸充, 川上養一
- Organizer
  電子情報通信学会研究報告
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: Demonstration of far-red LEDs2023
- Author(s)
  M. Funato, Y. Matsuda, and Yoichi Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] InGaN-based red emitters fabricated on lattice-matched ScAlMgO4 substrates2023
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  The 23rd Intern. Meeting on Information Display
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] Flexible spectral control using chip-scale multi-wavelength InGaN LEDs2023
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] (0001)面InGaNフォトダイオードにおける組成傾斜層の光励起キャリア局在抑制効果2023
- Author(s)
  道上平士郎, 市川修平, 松田祥伸, 船戸充, 川上養一, 小島一信
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Chip-scale multi-wavelength InGaN LEDs utilizing patterned micro-topography2023
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  Lester Eastman Conf. on High Performance Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] MOVPE of GaN without using low-temperature buffer layers2023
- Author(s)
  T. Sakaguchi, K. Takemura, Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  42nd Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] InGaN LEDs on tailored three-dimensional structures toward micro-LED displays2023
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 30th Intern. Display Workshops
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Spatial- and time-resolved photoluminescence at high temperatures on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN2023
- Author(s)
  Z. Zhang, R. Ishii, M. Funato, and Y. Kawakami
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Broadband emission from semipolar InGaN quantum wells on GaN microlens structures2023
- Author(s)
  S. Fukushige, Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上でのInGaN系窒化物半導体の有機金属気相成長2023
- Author(s)
  船戸充, 松田祥伸, 川上養一
- Organizer
  日本学術振興会第R032委員会第13回研究会「ディスプレイ用LEDおよび関連発光材料」
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 窒化物半導体を用いた発光シンセサイザー開発の現状と展望2023
- Author(s)
  Y. Kawakami, Y. Matsuda, R. Ishii, and M. Funato
- Organizer
  日本表面真空学会関西支部特別講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 265 nm発光バルクAlN基板上AlGaN量子井戸の内部量子効率と発光寿命の温度依存性(10--500 K)2023
- Author(s)
  田中志樹, 石井良太, 船戸充, 川上養一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Spontaneous and stimulated emission physics of aluminum nitride2023
- Author(s)
  R. Ishii, T. Nagashima, R. Yamamoto, T. Hitomi, M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Correlative microphotoluminescence spectroscopy on hybrid quantum well InGaN red LEDs2023
- Author(s)
  Z. Zhang, R. Ishii, K. Shojiki, M. Funato, D. Iida, K. Ohkawa, and Y. Kawakami
- Organizer
  The 14th Intern. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上InGaN/GaN超格子構造の設計と作製2022
- Author(s)
  坂口太郎, 福井崇人, 松田祥伸, 松倉誠, 小島孝広, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上での窒化物半導体のMOVPEと赤色発光素子2022
- Author(s)
  船戸充, 川上養一
- Organizer
  応用物理学会結晶工学分科会第157回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上への高In組成InGaN発光素子の作製2022
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Efficient far-UVC emissions from semipolar r-plane AlGaN/AlN QWs2022
- Author(s)
  R. Akaike, M. Funato, and Y. Kawakami
- Organizer
  The 10th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Fabrication and optical properties of ultra-thin GaN/AlN quantum wells for far-UVC emitters2022
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 誘電体薄膜を用いた局在型表面プラズモン共鳴の緑色波長領域での調整と窒化物半導体における高効率発光2022
- Author(s)
  亀井勇希, 垣内晴也, 松山哲也, 和田健司, 船戸充，川上養一，岡本晃一
- Organizer
  第69回応用物理学会春季学術講演会, hybrid
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 自在な構造制御による多波長発光を目指したGaNマイクロレンズ構造上InGaN LED2022
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Selectively and non-selectively excited photoluminescence study for AlGaN quantum wells grown on epitaxially laterally overgrown AlN templates2022
- Author(s)
  S. Tanaka, R. Ishii, N. Susilo, T. Wernicke, M. Kneissl, M. Funato, and Y. Kawakami
- Organizer
  The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 2インチScAlMgO4基板上へのGaNのMOVPE成長と反り評価2022
- Author(s)
  福井崇人, 坂口太郎, 松田祥伸, 松倉誠, 小島孝広, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] Strategy for higher red emission efficiency based on InGaN lattice matched to ScAlMgO4 substrates2022
- Author(s)
  Mitsuru Funato, Yoichi Kawakami
- Organizer
  Laser Display and Lighting Conference 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 2インチScAlMgO4基板上へのGaNのMOVPE成長と反り評価2022
- Author(s)
  福井崇人, 坂口太郎, 松田祥伸, 松倉誠, 小島孝広, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 窒化物半導体の多波長発光機構の解明と制御 -発光シンセサイザー創製を目指して-2022
- Author(s)
  川上養一, 松田祥伸, 石井良太, 船戸充
- Organizer
  第83回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 半極性面AlGaN量子井戸からの波長250 nm以下での高効率発光2022
- Author(s)
  赤池良太, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes2022
- Author(s)
  M. Funato, Y. Matsuda, Yoichi Kawakami
- Organizer
  SPIE Photonics West 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] ScAlMgO4基板上への高In組成InGaN発光素子の作製2022
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第69回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates2022
- Author(s)
  R. Ishii, A. Yoshikawa, H. Kobayashi, M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West on demand, online
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] One-dimensional confinement of excitons in GaN/AlN nanostructures formed on bunched steps2022
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on UV Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] HVPE 成長 AlN基板からの誘導放出の観測とその起源について2022
- Author(s)
  石井良太, 人見達矢, 永島徹, 山本玲緒, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Multiwavelength emission from InGaN quantum wells on GaN microlens structures2022
- Author(s)
  Y. Matsuda, S. Funato, M. Funato, and Y. Kawakami
- Organizer
  The 20th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Strategy for higher red emission efficiency based on InGaN lattice matched to ScAlMgO4 substrates2022
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  The Laser Display and Lighting Conference 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] サーマルリフロー法を用いたInGaN系多波長発光構造の作製とLEDデバイス動作2022
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Temperature-dependent electroluminescence spectroscopy on 265-nm AlGaN-based LEDs grown on AlN substrates2022
- Author(s)
  R. Ishii, M. Funato, and Y. Kawakami
- Organizer
  The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ELO基板上AlGaN量子井戸の低温から室温以上における時間積分・時間分解PLを用いた光学評価2022
- Author(s)
  田中志樹, 石井良太, N. Susilo, T. Wernicke, M. Kneissl, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Development of light emitting synthesizer based on nitride semiconductors2022
- Author(s)
  Y. Kawakami, Y. Matsuda, R. Ishii, and M. Funato
- Organizer
  41st Electronic Materials Symposium
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 局在型表面プラズモン共鳴と誘電体薄膜によるInGaN/GaN量子井戸の高効率緑色発光2022
- Author(s)
  亀井勇希、垣内晴也、松山哲也、和田健司、船戸充、川上養一、岡本晃一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Anisotropic emission wavelength distribution of InGaN quantum wells on GaN microlens structures formed on semipolar (-1-12-2) plane2022
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  The 10th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by oxide thin films2022
- Author(s)
  S. Kaito, Y. Kamei, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, K. Okamoto
- Organizer
  SPIE Optics + Photonics 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] far-UVC領域で発光する半極性r面AlGaN/AlNの時間分解PL測定による解析2022
- Author(s)
  赤池良太, 船戸充, 川上養一
- Organizer
  第14回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Tuning of Localized Surface Plasmon Resonance in Green Wavelength Region and High-Efficiency Light Emission in Nitride Semiconductors2022
- Author(s)
  Y. Kamei, S. Kaito, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, K. Okamoto
- Organizer
  International Conference on Nano-photonics and Nano-optoelectronics 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Strategy for higher red emission efficiency based on InGaN lattice matched to ScAlMgO4 substrates2022
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  The Laser Display and Lighting Conference 2022, Yokohama, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Temperature-dependent microphotoluminescence study on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN2022
- Author(s)
  Z. Zhang, R, Ishii, M. Funato, and Y. Kawakami
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上InGaN/GaN超格子構造の設計と作製2022
- Author(s)
  坂口太郎, 福井崇人, 松田祥伸, 松倉誠, 小島孝広, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 銀ナノ粒子の表面プラズモン共鳴を利用した GaN の発光の高効率化2022
- Author(s)
  垣内晴也，松山哲也，和田健司，船戸充，川上養一，岡本晃一
- Organizer
  LED総合フォーラム2022 in 徳島，online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 窒化物半導体の結晶成長と光物性2022
- Author(s)
  船戸充, 川上養一
- Organizer
  ワイドギャップ半導体学会第8回研究会「チュートリアル」
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Y. Matsuda, S. Funato, M. Funato, and Y. Kawakami2022
- Author(s)
  Y. Matsuda, S. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ScAlMgO4基板上での窒化物半導体のMOVPEと赤色発光素子2022
- Author(s)
  船戸充, 川上養一
- Organizer
  応用物理学会結晶工学分科会第157回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] 半極性面上の組成傾斜AlGaNによる分極誘起p型伝導層の検討2022
- Author(s)
  神谷君斗, 赤池良太, 船戸充, 川上養一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities2022
- Author(s)
  A. Muhin, M. Guttmann, V. Montag, N. Susilo, E. Ziffer, L. Sulmoni, S. Hagedorn, N. Lobo-Ploch, J. Rass, L. Cancellara, C. Netzel, S. Tanaka, R. Ishii, T. Wernicke, M. Funato, Y. Kawakami, and M. Kneissl
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 誘電体薄膜を用いた局在型表面プラズモン共鳴の緑色波長領域での調整と窒化物半導体における高効率発光2022
- Author(s)
  亀井勇希，垣内晴也，松山哲也，和田健司，船戸充，川上養一，岡本晃一
- Organizer
  第18回プラズモニクスシンポジウム，online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes2022
- Author(s)
  M. Funato, Y. Matsuda, and Y. Kawakami
- Organizer
  SPIE Photonics West on demand, online
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 超ワイドギャップ半導体AlNバルク単結晶における励起子誘導放出2022
- Author(s)
  石井良太, 船戸充, 川上養一
- Organizer
  日本学術振興会光電相互変換第125委員会第262回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Highly Efficient Green Emissions of InGaN/GaN Quantum Wells with oxide thin films2022
- Author(s)
  S. Kaito, Y.Kamei, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, K. Okamoto
- Organizer
  The 15th Pacific Rim Conference on Lasers and Electro-Optics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 人体無害殺菌を目指したAlGaN系紫外発光の短波長化と高効率化2021
- Author(s)
  船戸充, 川上養一
- Organizer
  照明学会全国大会分科会シンポジウム1「光源と照明制御システムの最新動向」online
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 高効率赤色LED実現のためのInリッチInGaN/ScAlMgO4の設計および作製2021
- Author(s)
  船戸充, 川上養一
- Organizer
  ワイドギャップ半導体学会第4回研究会, online
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers2021
- Author(s)
  R. Ishii, M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West: 11686-51
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] ナノ金属およびナノ誘電体薄膜を用いた InGaN/GaN 量子井戸の高効率発光2021
- Author(s)
  垣内晴也，松山哲也，和田健司，船戸充，川上養一，岡本晃一
- Organizer
  ナノ学会第19回大会，online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] SiO2薄膜によるInGaN/GaN量子井戸を有する窒化物半導体の高効率発光2021
- Author(s)
  垣内晴也, 島ノ江考平, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第68回応用物理学会春季学術講演会, online ：17p-Z27-6
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Recombination mechanism in III-nitride based singularity structures by scanning near-field optical microscopy2021
- Author(s)
  Y. Kawakami, R. Ishii, and M. Funato
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology: C10-10-55
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Agナノ粒子の表面プラズモン共鳴を用いたGaNの発光増強機構2021
- Author(s)
  垣内晴也, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第82回応用物理学会秋季学術講演会, online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 極性面フリーなInGaN系マルチファセット構造の作製と光デバイス応用2021
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第13回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Emission enhancement mechanism of surface plasmon resonance of Ag nanoparticles on GaN-based semiconductors2021
- Author(s)
  S. Kaito, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami, K. Okamoto
- Organizer
  The 9th International Symposium on Surface Science, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 高効率赤色LED実現のためのInリッチInGaN/ScAlMgO4の設計および作製2021
- Author(s)
  船戸充, 川上養一
- Organizer
  ワイドギャップ半導体学会第4回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04661
[Presentation] Ultrathin GaN/AlN quantum wells for deep UV emitters2021
- Author(s)
  M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Ultrathin GaN/AlN quantum wells for deep UV emitters2021
- Author(s)
  M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West: 11686-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 選択および非選択光励起によるELO基板上AlGaN量子井戸の深紫外発光特性評価2021
- Author(s)
  田中志樹, 石井良太, N. Susilo, T. Wernicke, M. Kneissl, 船戸充, 川上養一
- Organizer
  第82回応用物理学会秋季学術講演会, online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Influence of substrate misorientation on emission and waveguiding properties of blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction2021
- Author(s)
  A. Kafar, R. Ishii, Y. Matsuda, T. Suski, P. Perlin, M. Funato, and Y. Kawakami, et al. (計12名)
- Organizer
  49th International School & Conference on the Physics of Semiconductors "Jaszowiec 2021", online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Si添加ホモエピタキシャルAlN薄膜の極低温下フォトルミネッセンス測定2021
- Author(s)
  石井良太, 吉川陽, 小林敬嗣, 船戸充, 川上養一
- Organizer
  第82回応用物理学会秋季学術講演会, online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] 極性面フリーな三次元GaN構造の成長発展メカニズム2021
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第82回応用物理学会秋季学術講演会, online
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] InGaN-based quantum wells on ScAlMgO4 substrates toward long wavelength emitters2020
- Author(s)
  T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] エレクトロルミネッセンス・フォトルミネッセンス法によるAlN基板上265 nm帯AlGaN LEDの評価2020
- Author(s)
  石井良太, 吉川陽, 永瀬和宏, 船戸充, 川上養一
- Organizer
  電子情報通信学会研究会：D2020-6/CPM2020-27/LQE2020-57
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Exciton fine structure of aluminum nitride2020
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Exciton fine structure of aluminum nitride2020
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] InGaN-based quantum wells on ScAlMgO4 substrates toward long wavelength emitters2020
- Author(s)
  T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] First demonstration and characterization of semipolar deep ultraviolet LEDs on r-AlN2020
- Author(s)
  R. Akaike, M. Funato, and Y. Kawakami
- Organizer
  39th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] First demonstration and characterization of semipolar deep ultraviolet LEDs on r-AlN2020
- Author(s)
  R. Akaike, M. Funato, and Y. Kawakami
- Organizer
  39th Electronic Materials Symposium: P2-17
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] プラズモニックナノ共振器による高効率発光と量子デバイスへの応用2020
- Author(s)
  岡本晃一, 垣内晴也, 島ノ江考平, 村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一
- Organizer
  電子情報通信学会研究会：ED2020-25/CPM2020-46/LQE2020-76
- Data Source
  KAKENHI-PROJECT-20H05622
[Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
- Author(s)
  小林敬嗣, 市川修平, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Experimental study on semipolar (-1-12-2) LEDs toward polar-plane-free faceted InGaN LEDs on (-1-12-2)2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
- Author(s)
  M. Funato, H. Kobayashi and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019
- Author(s)
  正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 極性面フリーな三次元InGaN-LEDのデバイスプロセス検討2019
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] InGaN/GaN多重量子井戸の表面プラズモン侵入長を超えた発光増強2019
- Author(s)
  村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates2019
- Author(s)
  K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリーな三次元InGaN-LEDのデバイスプロセス検討2019
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Experimental study on semipolar (-1-12-2) LEDs toward polar-plane-free faceted InGaN LEDs on (-1-12-2)2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  Conference on LED and its industrial application `19 (LEDIA)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
- Author(s)
  小林敬嗣, 市川修平, 船戸充, 川上養一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation2019
- Author(s)
  A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
- Author(s)
  M. Funato, H. Kobayashi and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 圧電素子を用いた光音響分光測定系の構築によるGaNの支配的な非輻射再結合過程の評価2019
- Author(s)
  山崎一人, 石井良太, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  Conference on LED and its industrial application `19 (LEDIA)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] InGaN/GaN多重量子井戸における表面プラズモン増強の温度依存性2019
- Author(s)
  村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Fabrication of polar-plane-free faceted InGaN LED structures with polychromatic emission properties2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] InGaN/GaN多重量子井戸における表面プラズモン増強の温度依存性2019
- Author(s)
  村尾文弥, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 圧電素子を用いた光音響分光測定系の構築によるGaNの支配的な非輻射再結合過程の評価'2019
- Author(s)
  山崎一人, 石井良太, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリーな三次元InGaN-LED構造の結晶成長と評価2019
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会,
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
- Author(s)
  M. Funato, K. Kataoka and Y. Kawakami
- Organizer
  3th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well2019
- Author(s)
  R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates2019
- Author(s)
  K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
- Organizer
  13th International Conference on Nitride Semiconductors
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Fabrication of polar-plane-free faceted InGaN LED structures with polychromatic emission properties2019
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング2019
- Author(s)
  石井良太, 小山友二, 船戸充, 川上養一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling2019
- Author(s)
  A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
- Author(s)
  M. Funato, K. Kataoka and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 極性面フリーな三次元InGaN-LED構造の結晶成長と評価2019
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 深紫外近接場光学顕微鏡の開発とAlリッチAlGaN系特異構造のPLマッピング評価2019
- Author(s)
  石井良太, 船戸充,　川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Emission enhancements of InGaN/GaN MQW beyond skin depth of surface plasmon polariton2019
- Author(s)
  F. Murao, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami and K. Okamoto
- Organizer
  7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] GaN/AlN ultrathin quantum wells for UV emitters2019
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well2019
- Author(s)
  R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling2019
- Author(s)
  A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 深紫外近接場光学顕微鏡の開発とAlリッチAlGaN系特異構造のPLマッピング評価2019
- Author(s)
  石井良太, 船戸充,　川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Emission enhancements of InGaN/GaN MQW beyond skin depth of surface plasmon polariton2019
- Author(s)
  F. Murao, T. Matsuyama, K. Wada, M. Funato, Y. Kawakami and K. Okamoto
- Organizer
  7th Intern. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Adding p-type conductivity to AlN surfaces by deposition of ultrathin carbon-containing layers2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Carbon and aluminum co-treatment at high temperatures for surface p-type conduction of AlN2019
- Author(s)
  K. Kishimoto, M. Funato, and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation2019
- Author(s)
  A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング2019
- Author(s)
  石井良太, 小山友二, 船戸充, 川上養一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] InGaN/GaN多重量子井戸の表面プラズモン侵入長を超えた発光増強2019
- Author(s)
  村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 有機金属気相成長したGaN/AlN極薄量子井戸構造の光学的特性2019
- Author(s)
  小林敬嗣, 市川修平, 船戸充, 川上養一
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019
- Author(s)
  正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Highly efficient UV emission from ultrathin GaN/AlN quantum wells grown by metalorganic vapor phase epitaxy2019
- Author(s)
  M. Funato, H. Kobayashi and Y. Kawakami
- Organizer
  3th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] カーボン添加によるAlN表面におけるp型伝導制御2019
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Broad-band UV emission from a two-dimensional array of AlGaN microstructures2019
- Author(s)
  M. Funato, K. Kataoka and Y. Kawakami
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
- Author(s)
  M. Funato, S. Ichikawa, and Y. Kawakami
- Organizer
  19th Intern. Conf. on MOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 表面プラズモンによるInGaN/GaN多層量子井戸への発光増強効果2018
- Author(s)
  村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリー三次元InGaN量子井戸を用いたパステルカラー・白色合成2018
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Controlling p-type conductivity at AlN surfaces2018
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors,
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Controlling p-type conductivity at AlN surfaces2018
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] In0.17Ga0.83N/ScMgAlO4テンプレート上に作製した赤色発光InxGa1-xN/In0.17Ga0.83N量子井戸構造 (x > 0.17)2018
- Author(s)
  前原圭汰, 尾崎拓也, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
- Author(s)
  片岡研，千賀岳人，船戸充，川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] In0.17Ga0.83N/ScMgAlO4テンプレート上に作製した赤色発光InxGa1-xN/In0.17Ga0.83N量子井戸構造 (x > 0.17)2018
- Author(s)
  前原圭汰, 尾崎拓也, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
- Author(s)
  川上養一, 早川峰洋, 船戸充
- Organizer
  第７９回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 表面プラズモンによるInGaN/GaN多層量子井戸への発光増強効果2018
- Author(s)
  村尾文弥, 中村俊樹, 松山哲也, 和田健司, 船戸充, 川上養一, 岡本晃一
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 極性面フリーな三次元InGaN量子井戸からの輻射再結合寿命が短いパステルグリーン発光2018
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
- Author(s)
  早川峰洋, 市川修平, 船戸充,川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
- Author(s)
  川上養一, 早川峰洋, 船戸充
- Organizer
  第７９回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN表面におけるp型伝導の制御2018
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会,
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 深紫外CW・時間分解PL分光法による12C/13C超格子の光学特性評価2018
- Author(s)
  石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 深紫外CW・時間分解PL分光法による12C/13C超格子の光学特性評価2018
- Author(s)
  石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
- Author(s)
  岸元克浩, 船戸充,川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
- Author(s)
  H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
- Author(s)
  片岡研, 千賀岳人, 船戸充,　川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel and white color syntheses2018
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
- Author(s)
  早川峰洋, 市川修平, 船戸充, 川上養一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] AlN表面におけるp型伝導の制御2018
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
- Author(s)
  船戸充, 市川修平, 川上養一
- Organizer
  電子情報通信学会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Micro-photoluminescence mapping of surface plasmon coupled emission from InGaN/GaN quantum wells2018
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
- Author(s)
  M. Funato, S. Ichikawa, and Y. Kawakami
- Organizer
  19th Intern. Conf. on MOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Controlling p-type conductivity at AlN surfaces2018
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
- Author(s)
  H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 極性面フリーな三次元InGaN量子井戸からの輻射再結合寿命が短いパステルグリーン発光2018
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Ultrathin GaN/AlN quantum wells fabricated with a self-limiting process2018
- Author(s)
  M. Funato, S. Ichikawa, and Y. Kawakami
- Organizer
  19th Intern. Conf. on MOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
- Author(s)
  船戸充, 市川修平, 川上養一
- Organizer
  電子情報通信学会研究会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] AlGaN系ステップバンチング特異構造からの高効率発光現象2018
- Author(s)
  川上養一, 早川峰洋, 船戸充
- Organizer
  第79回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] EVPE法で成長したAlN膜におけるp型伝導2018
- Author(s)
  岸元克浩, 船戸充,川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Micro-photoluminescence mapping of surface plasmon coupled emission from InGaN/GaN quantum wells2018
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 極性面フリーな三次元InGaN量子井戸を用いた混合色合成と制御2018
- Author(s)
  松田祥伸,船戸充, 川上養一
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates lattice-matched to ScMgAlO4 substrates2018
- Author(s)
  K. Maehara, T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x : 0 - 1) active layers2018
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Growth evolution of polar-plane-free faceted GaN structures2018
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  19th Intern. Conf. on MOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN表面におけるp型伝導の制御2018
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第1回結晶工学 ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Red-emitting InGaN quantum wells grown on In0.17Ga0.83N templates lattice-matched to ScMgAlO4 substrates2018
- Author(s)
  K. Maehara, T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Control of carrier recombination processes in AlGaN-based UV emitters2018
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Development of a deep-ultraviolet scanning nearfield optical microscope for nano-spectroscopic characterizations of AlxGa1-xN (x : 0 - 1) active layers2018
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] GaN/AlN極薄膜量子井戸の作製と偏光特性2018
- Author(s)
  船戸充, 市川修平, 川上養一
- Organizer
  電子情報通信学会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Self-limiting growth and optical properties of ultrathin GaN/AlN quantum wells2018
- Author(s)
  H. Kobayashi, S. Ichikawa, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Growth evolution of polar-plane-free faceted GaN structures2018
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  19th Intern. Conf. on MOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Polar-plane-free faceted InGaN quantum wells toward highly radiative pastel and white color syntheses2018
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  International Workshop on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリー三次元InGaN量子井戸を用いたパステルカラー・白色合成2018
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlGaN微細構造の二次元アレイによるブロードバンドUV発光2018
- Author(s)
  片岡研, 千賀岳人, 船戸充,川上養一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 極性面フリーな三次元InGaN量子井戸を用いた混合色合成と制御2018
- Author(s)
  松田祥伸,船戸充, 川上養一
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 微傾斜c-AlN基板上AlGaN量子井戸におけるマクロステップを利用した高効率発光2018
- Author(s)
  早川峰洋, 市川修平, 船戸充,川上養一
- Organizer
  第65回応用物理学会春季学術講演会, 早稲田大学
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Spatially-resolved evaluation of surface-plasmon-coupled photoluminescence-enhancement of InGaN/GaN quantum wells2017
- Author(s)
  K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果2017
- Author(s)
  石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 窒化物半導体における輻射・非輻射再結合過程2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14232
[Presentation] 三次元InGaN量子井戸におけるIn組成のファセット間分布に関する考察2017
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
- Organizer
  36th Electronic Materials Symposium, Nagahama Royal Hotel
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  Intern. Workshop on UV Materials and Devices 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 高効率白色合成に向けた極性面フリーな三次元InGaN量子井戸の作製と評価2017
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlN系三次元構造による紫外多波長発光LED2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] GaN系3次元マイクロファセット構造による多波長LEDの開発2017
- Author(s)
  川上養一, 松田祥伸, 船戸充
- Organizer
  照明学会固体光源分科会研究会
- Place of Presentation
  日本大学理工学部駿河台キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Spatially-resolved evaluation of surface-plasmon-coupled photoluminescence-enhancement of InGaN/GaN quantum wells2017
- Author(s)
  K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
- Author(s)
  Y. Kawakami, T. Ozaki, and M. Funato
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN系三次元構造の形成と紫外多波長発光2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  29th International Conference on Defects in Semiconductors, Matsue, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN growth by an environmentally friendly method2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  2017 German-Japanese-Spanish joint workshop
- Place of Presentation
  Mallorca, Spain
- Year and Date
  2017-03-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas2017
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Polychromatic emission from semi/nonpolar faceted 3D-InGaN quantum wells with high radiative recombination probabilities2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlN系三次元構造の形成と紫外多波長発光2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  International Workshop on UV Materials and Devices 2017, Fukuoka, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] マクロステップ上AlGaN量子細線の光学特性2017
- Author(s)
  早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 高効率白色合成に向けた極性面フリーな三次元InGaN量子井戸の作製と評価2017
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
- Author(s)
  Y. Kawakami, T. Ozaki, and M. Funato
- Organizer
  12th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14232
[Presentation] GaN系3次元マイクロファセット構造による多波長LEDの開発2017
- Author(s)
  川上養一, 松田祥伸, 船戸充
- Organizer
  照明学会固体光源分科会研究会
- Place of Presentation
  日本大学理工学部駿河台キャンパス
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 一軸性応力下におけるダイヤモンドの微分吸収スペクトル2017
- Author(s)
  石井良太, 鹿田真一, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 顕微フォトルミネセンスマッピングによる表面プラズモン発光増強の評価2017
- Author(s)
  立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Year and Date
  2017-01-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
- Organizer
  36th Electronic Materials Symposium, Nagahama Royal Hotel
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN growth by an environmentally friendly method2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  2017 German-Japanese-Spanish joint workshop
- Place of Presentation
  Mallorca, Spain
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 一軸性応力下におけるダイヤモンドの微分吸収スペクトル2017
- Author(s)
  石井良太, 鹿田真一, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Impact of InGaN epitaxy lattice matched to ScAlMgO4 substrates on future photonic devices2017
- Author(s)
  Y. Kawakami, T. Ozaki, and M. Funato
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 短波長半導体発光デバイスの現状と動向2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第48回アナログ技術トレンドセミナ(HAB研セミナ), 京都テルサ
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  レーザ・量子エレクトロニクス研究会(LQE) (2017)，LQE奨励賞記念講演
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  29th International Conference on Defects in Semiconductors, Matsue, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Impact of defects on the optical characteristics of AlGaN quantum wells2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  29th International Conference on Defects in Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] An environmentally friendly method to grow AlN thick layers2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  0th Intern. Workshop on Bulk Nitride Semiconductors, Espoo, Finland
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  36th Electronic Materials Symposium, Nagahama Royal Hotel
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] AlN系三次元構造による紫外多波長発光LED2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] マクロステップ上AlGaN量子細線の光学特性2017
- Author(s)
  早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会, 名古屋大学
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 顕微フォトルミネセンスマッピングによる表面プラズモン発光増強の評価2017
- Author(s)
  立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 窒化物半導体における輻射・非輻射再結合過程2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] An environmentally friendly method to grow AlN thick layers2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  10th Intern. Workshop on Bulk Nitride Semiconductors, Espoo, Finland
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlリッチAlGaN系量子井戸の発光・非発光過程2017
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE成長AlN/サファイア界面におけるボイド形成メカニズムの検討2017
- Author(s)
  岸元克浩, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas.2017
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN growth by an environmentally friendly method2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  2017 German-Japanese-Spanish joint workshop
- Place of Presentation
  Mallorca, Spain
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 窒化物半導体における輻射・非輻射再結合過程 (Tutorial)2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会，北海道大学
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Clarifying carrier recombination processes in AlGaN-based materials towards efficient DUV emitters2017
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD2017), Fukuoka, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 三次元InGaN量子井戸におけるIn組成のファセット間分布に関する考察2017
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN系三次元構造による紫外多波長発光LED2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Design of Al-rich AlGaN quantum-well structures for efficient UV emitters2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Francisco, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Polychromatic emission from semi/nonpolar faceted 3D-InGaN quantum wells with high radiative recombination probabilities2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Longer nonradiative lifetimes of excitons localized in AlGaN quantum wires grown on macrosteps2017
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, K. Kumamoto, M. Shibaoka, M. Funato and Y. Kawakami
- Organizer
  36th Electronic Materials Symposium
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Growth mechanism of polar-plane-free faceted InGaN quantum wells with high radiative recombination probabilities2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  36th Electronic Materials Symposium, Nagahama Royal Hotel
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] マクロステップ上AlGaN量子細線の光学特性2017
- Author(s)
  早川峰洋, 林佑樹, 長瀬勇樹, 市川修平, 熊本恭介, 柴岡真美, 船戸充, 川上養一
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会, 名古屋大学
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 窒化物半導体における輻射・非輻射再結合過程(Tutorial).2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会，北海道大学
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 短波長半導体発光デバイスの現状と動向2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第48回アナログ技術トレンドセミナ(HAB研セミナ)
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Interfacial structure control of AlN on sapphire fabricated from Al metal and N2 gas2017
- Author(s)
  K. Kishimoto, M. Funato and Y. Kawakami
- Organizer
  12th International Conference on Nitride Semiconductors, Strasbourg, France
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 深紫外CWレーザにより生成したダイヤモンド結晶中の極低温励起子に対する同位体効果2017
- Author(s)
  石井良太, 鹿田真一, 寺地徳之, 神田久生, 渡邊幸志, 船戸充, 川上養一
- Organizer
  第78回応用物理学会秋季学術講演会, 福岡国際会議場
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] An environmentally friendly method to grow AlN thick layers2017
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  10th Intern. Workshop on Bulk Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] AlN系三次元構造の形成と紫外多波長発光2017
- Author(s)
  片岡研, 千賀岳人, 船戸充, 川上養一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 短波長半導体発光デバイスの現状と動向2017
- Author(s)
  船戸充, 川上養一
- Organizer
  第48回アナログ技術トレンドセミナ(HAB研セミナ), 京都テルサ
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters2017
- Author(s)
  Y. Matsuda, M. Funato and Y. Kawakami
- Organizer
  レーザ・量子エレクトロニクス研究会(LQE) (2017)，LQE奨励賞記念講演
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] (0001)面AlGaN/AlNヘテロ構造におけるすべり系と格子緩和モデル2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学, 東京都目黒区
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 微傾斜(0001)サファイア基板上に作製したAlGaN量子細線構造における輻射再結合過程の増強2016
- Author(s)
  早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学, 東京都目黒区
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Spatially Resolved Evaluation of Surface Plasmon Enhanced Photoluminescence of InGaN/GaN2016
- Author(s)
  K. Tateishi, P. Wang, S. Ryuzaki, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada
- Organizer
  The 14th International Conference on Near-Field Optics, Nanophotonics, and Related Techniques (NFO-14)
- Place of Presentation
  浜松
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  一般社団法人　電子情報技術産業協会第12回量子現象利用デバイス技術分科会
- Place of Presentation
  大手センタービル
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] GaNとAlNの物性定数の同定と(Al,Ga)N系半導体の物性予測2016
- Author(s)
  石井良太、船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
- Author(s)
  T.Ozaki, M.Funato, and Y.Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  一般社団法人　電子情報技術産業協会, 第12回量子現象利用デバイス技術分科会
- Place of Presentation
  大手センタービル
- Invited
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
- Author(s)
  M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on UV Materials and Devices
- Place of Presentation
  Beijing, China
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] クリーンプロセスによるAlNバルク結晶の成長2016
- Author(s)
  岸元克浩, 呉珮岑, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  京大桂キャンパス
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
- Author(s)
  M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on UV Materials and Devices
- Place of Presentation
  Beijing, China
- Year and Date
  2016-07-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] ScAlMgO4(0001)基板上InGaN薄膜における組成引き込み効果2016
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
- Author(s)
  T.Ozaki, M.Funato, and Y.Kawakami
- Organizer
  Intern.　Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Year and Date
  2016-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14232
[Presentation] Unveiling the carrier recombination paths in high Al content AlGaN quantum wells2016
- Author(s)
  M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on UV Materials and Devices
- Place of Presentation
  Beijing, China
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-16K14232
[Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖，滋賀
- Year and Date
  2016-07-07
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Year and Date
  2016-10-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] 微小なオフ角に由来するc面AlGaN/AlNヘテロ界面におけるc面すべりの可能性2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Evolution of strain and dislocations during ESVPE growth of AlN2016
- Author(s)
  K. Kishimoto, P.-T. Wu, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] ScAlMgO4 (0001)基板上InGaN薄膜における格子整合近傍での組成引き込み効果2016
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  京大桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 半極性面AlGaN/AlN量子井戸におけるポテンシャル揺らぎの抑制2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Evolution of strain and dislocations during ESVPE growth of AlN2016
- Author(s)
  K. Kishimoto, P.-T. Wu, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 近接場過渡レンズ法によるInGaN単一量子井戸におけるキャリアダイナミクスの評価2016
- Author(s)
  塚本真大, 石井良太, 船戸充, 川上養一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学, 東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE法によるAlN/サファイア界面構造の制御2016
- Author(s)
  岸元克浩，P.-T. Wu, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Three dimensional semi/nonpolar InGaN quantum wells toward phosphor-free polychromatic emitters2016
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Stress-dependent spectroscopy on single-crystalline diamond2016
- Author(s)
  R. Ishii, S. Shikata, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlリッチAlGaN量子井戸のMOVPE成長と光物性制2016
- Author(s)
  川上養一, 市川修平, 船戸充
- Organizer
  （社）電子情報技術産業協会, 第12回量子現象利用デバイス技術分科会
- Place of Presentation
  大手センタービル，東京
- Year and Date
  2016-12-21
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] マクロステップを利用したAlGaN量子細線構造による温度消光の低減2016
- Author(s)
  早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Year and Date
  2016-05-09
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Compositional pulling effect of InGaN films grown on ScAlMgO4 (0001) substrates by metal-organic vapor phase epitaxy2016
- Author(s)
  T.Ozaki, M.Funato, and Y.Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
- Author(s)
  船戸充, 川上養一
- Organizer
  光とレーザーの科学技術フェア2016, 紫外線セミナー
- Place of Presentation
  科学技術館（東京都千代田区北の丸公園２番１号）
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Stress-dependent spectroscopy on single-crystalline diamond2016
- Author(s)
  R. Ishii, S. Shikata, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Stimulated emission from optically-pumped semipolar AlGaN/AlN quantum well2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 微小なオフ角に由来するc面AlGaN/AlNヘテロ界面におけるc面すべりの可能性2016
- Author(s)
  市川修平, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] ScAlMgO4(0001)基板上InGaN薄膜における組成引き込み効果2016
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-16K14232
[Presentation] AlGaN系ヘテロ構造における格子不整転位の導入箇所制御2016
- Author(s)
  市川修平, 熊本恭介, 船戸充, 川上養一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学, 東京都目黒区
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Approaches to highly efficient UV emitters based on AlGaN quantum wells2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  SPIE Photonics West 2016
- Place of Presentation
  San Francisco, USA
- Year and Date
  2016-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 極性面フリーなInGaNマルチファセット構造を用いた多色発光の実現2016
- Author(s)
  松田祥伸, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  京大桂キャンパス
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] InGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価2016
- Author(s)
  立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
- Author(s)
  船戸充, 川上養一
- Organizer
  光とレーザーの科学技術フェア2016, 紫外線セミナー
- Place of Presentation
  科学技術館（東京都千代田区北の丸公園２番１号）
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Radiative and nonradiative recombination processes in AlGaN-based quantum wells2016
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Year and Date
  2016-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] nGaN系量子井戸の表面プラズモン発光増強現象の空間分解評価2016
- Author(s)
  立石和隆, 船戸充, 川上養一, 岡本晃一, 玉田薫
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] マクロステップを利用したAlGaN量子細線構造による温度消光の低減2016
- Author(s)
  早川峰洋, 林佑樹, 市川修平, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] EVPE法によるAlN/サファイア界面構造の制御2016
- Author(s)
  岸元克浩，P.-T. Wu, 船戸充, 川上養一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] 非極性面上に作製したAlGaN量子井戸の発光特性2016
- Author(s)
  船戸充, 川上養一
- Organizer
  光とレーザーの科学技術フェア2016
- Place of Presentation
  科学技術館，東京
- Year and Date
  2016-11-17
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Stimulated emission at 250 nm from optically-pumped semipolar (1-102) AlGaN/AlN quantum wells2016
- Author(s)
  S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] GaNとAlNの物性定数の同定と(Al,Ga)N系半導体の物性予測2016
- Author(s)
  石井良太、船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス
- Year and Date
  2016-05-10
- Invited
- Data Source
  KAKENHI-PROJECT-16H02332
[Presentation] Three dimensional semi/nonpolar InGaN quantum wells toward phosphor-free polychromatic emitters2016
- Author(s)
  Y. Matsuda, M. Funato, and Y. Kawakami
- Organizer
  35th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] ESVPE法により作製したAlN膜結晶性の膜厚依存性2016
- Author(s)
  岸元克浩, Wu PeiTsen, 船戸充, 川上養一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学, 東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering
- Place of Presentation
  San Diego, USA
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] ESVPE成長AlNの厚膜化に伴う歪および転位の評価2016
- Author(s)
  岸元克浩, P.-T.Wu, 船戸充, 川上養一
- Organizer
  第8回窒化物半導体結晶成長講演会，京都大学桂キャンパス
- Place of Presentation
  京都大学桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces2016
- Author(s)
  M. Hayakawa, Y. Hayashi, S. Ichikawa, M. Funato, and Y. Kawakami
- Organizer
  SPIE Nanoscience + Engineering,
- Place of Presentation
  San Diego
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06426
[Presentation] クリーンプロセスによるAlNバルク結晶の成長2016
- Author(s)
  岸元克浩, 呉珮岑, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  京大桂キャンパス
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Deep ultraviolet multi-wavelength emission from AlGaN quantum wells fabricated on three-dimensional facet structures2015
- Author(s)
  K. Kataoka, M. Funato and Y. Kawakami
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] アルミニウムを用いたプラズモニクスの発光増強応用2015
- Author(s)
  岡本晃一, 立石和隆, 川元駿, 西田知句, 玉田薫, 船戸充, 川上養一
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会(LQE)
- Place of Presentation
  大阪市立大学
- Year and Date
  2015-11-26
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Visible light emitting diodes based on InGaN/GaN multi quantum wells grown on ScAlMgO4(0001) substrates ― Purple to green spectral region―2015
- Author(s)
  T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing, China
- Year and Date
  2015-09-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] AlN基板上への半極性AlGaN量子井戸のMOVPE成長と光物性2015
- Author(s)
  市川修平,船戸充, 川上養一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-15
- Invited
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Visible light-emitting diodes on ScAlMgO4 (0001) substrates2015
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  2015 German-Japanese-Spanish joint workshop
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-07-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Microscopic Photoluminescence Mapping of Plasmonic Enhanced Emission from InGaN/GaN Quantum Well2015
- Author(s)
  Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Pangpang Wang, Sou Ryuzaki, Koichi Okamoto, and Kaoru Tamada
- Organizer
  The 2015 International Chemical Congress of Pacific Basin Societies (Pacifichem)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2015-12-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Tutorial RR: Introduction to Wide-Bandgap Materials for Power Electronics and Solid State Lighting2015
- Author(s)
  M. Funato
- Organizer
  2015 MRS Fall meeting & exhibit
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Optically determined critical thickness of AlGaN/AlN heterostructures2015
- Author(s)
  S. Ichikawa, Y. Iwata, M. Funato and Y. Kawakami
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Spatially resolved characterizations of the enhanced light emissions from InGaN/GaN by the surface plasmon resonance with silver and aluminum2015
- Author(s)
  K. Okamoto, K. Tateish, S. Kawamoto, H. Nishida, M. Funato and Y. Kawakami
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Dominant nonradiative recombination paths in Al-rich AlGaN related structures2015
- Author(s)
  S. Ichikawa, M. Funato, Y. Iwasaki, and Y. Kawakami
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Highly Enhanced Green Emission from Indium Galium Nitride Quantum Well by Surface Plasmon on Aluminum Film2015
- Author(s)
  Kazutaka Tateishi, Mitsuru Funato, Yoichi Kawakami, Sou Ryuzaki, Pangpang Wang, Koichi Okamoto, and Kaoru Tamada
- Organizer
  International Conference on Materials for Advanced Technologies (ICMAT2015)
- Place of Presentation
  Singapore
- Year and Date
  2015-07-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] 過渡レンズ法を用いたGaN基板と薄膜における非輻射再結合過程の評価2015
- Author(s)
  塚本真大, 石井良太, 船戸充, 川上養一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Radiative and nonradiative recombination processes in AlN-based deep ultraviolet emitters2015
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  2015 MRS Fall meeting & exhibit
- Place of Presentation
  Boston, USA
- Year and Date
  2015-12-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Nonradiative recombination paths in AlGaN-related structures and their temperature dependence2015
- Author(s)
  S.Ichikawa, M. Funato and Y. Kawakami
- Organizer
  34th Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako ,Shiga
- Year and Date
  2015-07-16
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Radiative and nonradiative recombination processes in Al-rich AlGaN-based materials2015
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  2015 German-Japanese-Spanish joint workshop
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] ScAlMgO4基板の構成元素がGaN成長層の特性に与える影響2015
- Author(s)
  尾崎拓也, 船戸充, 川上養一
- Organizer
  第76回応用物理学会秋季学術講演
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05732
[Presentation] Visualization of recombination dynamics in nitride-based semiconductors2013
- Author(s)
  Y. Kawakami, M. Funato and A. Kaneta
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Year and Date
  2013-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Semipolar faceting for InGaN-based polychromatic LEDs2013
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  CLEO : 2013
- Place of Presentation
  San Jose, USA
- Year and Date
  2013-06-13
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(11-22)GaN基板上に成長したInGaN/GaN多重量子井戸の臨界膜厚2012
- Author(s)
  西中淳一, 船戸充, 川上養一
- Organizer
  第59回応用物理学会関係連合講演会
- Place of Presentation
  早稲田大学早稲田キャンパス早稲田中・高等学校興風館
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] High quality AlGaN-based quantum wells for deep-ultraviolet emitters2012
- Author(s)
  M. Funato
- Organizer
  16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Busan, Korea
- Year and Date
  2012-05-22
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 近接場分光による局在・幅射・非幅射再結合ダイナミクスの評価2012
- Author(s)
  川上養一, 船戸充, 金田昭男
- Organizer
  第59回応用物理学会関係連合講演会
- Place of Presentation
  早稲田大学早稲田キャンパス早稲田中・高等学校興風館(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Recombination Dynamics in Nitride Semiconductors by Scanning Near-field Optical Microscopy2012
- Author(s)
  Y.Kawakami, A.Kaneta, M.Funato
- Organizer
  5th GCOE Intern.Symp.on Photonics and Electronics Science and Engineering
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 時間分解発光測定による高Al組成AlGaN/AlN量子井戸におけるMott密度の井戸幅依存性の評価2011
- Author(s)
  岩田佳也, 大音隆男, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 時間分解発光測定による高Al組成AlGaN/AlN量子井戸におけるMott密度の井戸幅依存性の評価2011
- Author(s)
  岩田佳也, 大音隆男, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011
- Author(s)
  A. Kaneta, M. Funato and Y. Kawakami
- Organizer
  2011 SPIE Optics+Photonics
- Place of Presentation
  California, USA
- Year and Date
  2011-08-25
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション2011
- Author(s)
  船戸充, 川上養一
- Organizer
  レーザー学会学術講演会第31回年次大会
- Place of Presentation
  電気通信大学(Invited)
- Year and Date
  2011-01-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Universal behavior of photolumineseence in polar and semipolar InGaN quantum wells revealed by hydrostatic nressure studies2011
- Author(s)
  T.Suski, G.Staszczak, R.Czernecki, G.Targowski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
- Organizer
  9th Intern.Conf.on Nitride Semiconductors
- Place of Presentation
  Glasgow, UK(Invited)
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光2011
- Author(s)
  大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会(講演奨励賞受賞記念講演)
- Place of Presentation
  神奈川工科大学(招待講演)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Extremely high internal quantum efficiency from AlGaN/AlN quantum wells2011
- Author(s)
  R.G.Banal, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 窒化物半導体による発光デバイスの最近の展開2011
- Author(s)
  船戸充, 川上養一
- Organizer
  平成23年度応用物理学会関西支部シンポジウム「最先端の光研究とその将来」～次世代の光源・材料・デバイス開発の最新動向～
- Place of Presentation
  島津製作所関西支社マルチホール(招待講演)
- Year and Date
  2011-11-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Extremely high internal quantum efficiency from AlGaN/AlN quantum wells2011
- Author(s)
  R.G.Banal, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] (11-22)GaN基板上への高品質InGaN量子井戸構造の成長2011
- Author(s)
  西中淳一, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy2011
- Author(s)
  Y.Kawakami, A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato
- Organizer
  2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device
- Place of Presentation
  Granada, Spain(Invited)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011
- Author(s)
  A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  2011 Optics+Photonics
- Place of Presentation
  California, USA(Invited)
- Year and Date
  2011-08-25
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy2011
- Author(s)
  Y.Kawakami, A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato
- Organizer
  2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device
- Place of Presentation
  Granada, Spain
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光2011
- Author(s)
  大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(Invited 講演奨励賞受賞記念講演)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of internal quantum efficiency on the droop phenomena studied by scanning near-field optical microscopy in InGaN single quantum wells2011
- Author(s)
  A.Kaneta, A.Hashiya, M.Funato, Y.Kawakami
- Organizer
  9th Intern.Conf.on Nitride Semiconductors
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-11
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 近接場顕微分光測定によるInGaN量子井戸中のキャリア拡散が効率ドループ現象へ与える影響2011
- Author(s)
  金田昭男, 橋谷亨, 船戸充, 川上養
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] (11-22)GaN基板上への高品質InGaN量子井戸構造の成長2011
- Author(s)
  西中淳一, 船戸充, 川上養一
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Efficient green emission from InGaN quantum wells coherently grown on semipolar (11-22) GaN subatrates2011
- Author(s)
  J.Nishinaka, M.Funato, Y.Kawakami
- Organizer
  9th Intern.Conf.on Nitride Semiconductors
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] InGaN/GaN quantum disks and random lasing : toward a quantum dot laser system based on disordered media2011
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Organizer
  E-MRS
- Place of Presentation
  Nice, France
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション2011
- Author(s)
  船戸充, 川上養一
- Organizer
  レーザー学会学術講演会第31回年次大会
- Place of Presentation
  電気通信大学(招待講演)
- Year and Date
  2011-01-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 高Al組成AlGaN/AlN量子井戸の選択励起条件下における時間分解フォトルミネッセンス2010
- Author(s)
  岩田佳也, 大音隆男, 金田昭男, Ryan Bonal, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] デュアルプローブ近接場光学顕微鏡を用いたInGaN/GaN SQWのキャリアダイナミクスの可視化2010
- Author(s)
  橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Weak carrier/exciton localization in InGaN SQW for higher emission efficiency grown on{20-21}GaN substrate2010
- Author(s)
  Y.S.Kim, A.Kaneta, M.Funato, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Weak carrier/exciton localization in InGaN SQW for higher emission efficiency grown on {20-21} GaN substrate2010
- Author(s)
  Y.S.Kim, A.Kaneta, M.Funato, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Photoluminescence properties of Al-rich A1GaN/A1N SQWs2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] デュアルプローブ近接場光学顕微鏡を用いたInGaNI/GaN SQWのキャリアダイナミクスの可視化2010
- Author(s)
  橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] InGaN量子井戸のキャリア拡散ダイナミクスの空間時間分解PL評価 -近接場光学顕微鏡によるEfficiency droop機構の解明-2010
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 無極性面AlGaN/AlN量子井戸の光学特性に関する理論検討2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlN量子井戸のMott転移付近のキャリアダイナミクス2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  日本材料学会半導体エレクトロニクス部門委員会平成22年度第1回研究会
- Place of Presentation
  大阪大学
- Year and Date
  2010-05-08
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 高Al組成AlGaN/AlN量子井戸のMott転移付近のキャリアダイナミクス2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  日本材料学会半導体エレクトロニクス部門委員会平成22年度第1回研究会
- Place of Presentation
  大阪大学
- Year and Date
  2010-05-08
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 表面プラズモンを用いた高Al組成AlGaN/AlN量子井戸構造の内部量子効率の向上2010
- Author(s)
  高田暁彦, 大音隆男, Ryan Banal, 岡本晃一, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Characterisation and maniqulation of the optical properties of single InGaN/GaN quantum disks2010
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlI量子井戸の選択励起条件下における時間分解フォトルミネッセンス2010
- Author(s)
  岩田佳也, 大音隆男, 金田昭男, R.Banal, 船戸充, 川上養一
- Organizer
  第57回応用特利学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Influence of Inhomogeneous Broadening for Gain Polarization Switching in Green Semipolar InGaN Quantum Wells2010
- Author(s)
  K.Kojima, A.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Inhomogeneous broadening in Al-rich AlGaN/AlN single quantum wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  28th samahang Pisika ng Pilipinas Physics Congress
- Place of Presentation
  Antipolo City, Rizal, Philippines
- Year and Date
  2010-10-26
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Photoluminescence Properties of Al-rich Al1-xGaxN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, T.Oto, M.Funato, Y.Kawakami
- Organizer
  JSAP the 57th Spring Meeting
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010
- Author(s)
  A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA(招待講演)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum wells2010
- Author(s)
  Y.Kawakami, M.Funato
- Organizer
  3rd GCOE International Symposium.
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 電子線励起法による高Al組成AlGaN/AlN量子井戸からの100mW深紫外発光2010
- Author(s)
  大音隆男, Ryan Banal, 片岡研, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(講演奨励賞受賞)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Characterisation and maniqulation of the optical properties of single In GaN/GaN quantum disks2010
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 表面プラズモンを用いた高Al組成AlGaN/AlN量子井戸構造の内部量子効率の向上2010
- Author(s)
  高田暁彦, 大音隆男, Ryan Bonal, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Al_<0.79>Ga_<0.21>N/AlN量子井戸のフォトルミネッセンスの時間発展とMott転移付近の発光メカニズムの解析2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, Ryan Bonal, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] デュアルプローブSNOMを用いた銀細線におけるプラズモン異方性伝搬の観測2010
- Author(s)
  藤本亮, 橋本恒明, 金田昭男, 岡本晃一, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光2010
- Author(s)
  大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 高Al組成AIGaN/AlN量子井戸の選択励起条件下における時間分解フォトルミネッセンス2010
- Author(s)
  岩田佳也, 大音隆男, 金田昭男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価～SNOMによるEfficiency droop機構の解明～2010
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells, The 37th Intern.2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  Symp.on Compound Semicond.
- Place of Presentation
  Takamatsu, Japan(Invited)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010
- Author(s)
  A. Kaneta, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Frorida, USA
- Year and Date
  2010-09-21
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Al_<0.79>Ga_<0.21>N/AlN量子井戸のォトルミネッセンスの時間発展とMott転移付近の発光メカニズムの解析2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, R.Banal, 船戸充, 川上養一
- Organizer
  第57回応用特利学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Time-resolved photoluminescence of Al-rich AlGaN/AlN multiple quantum wells under selective excitation2010
- Author(s)
  Y.Iwata, T.Oto, A.Kaneta, R.G.Banal, M.funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010
- Author(s)
  Y. Kawakami, A. Hashiya, A. Kaneta and M. Funato
- Organizer
  The 8th Intern. Symp. on Semiconductor Light Emitting Devices
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-17
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] デュアルプローブを用いた近接場光学顕微鏡の開発2010
- Author(s)
  橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] GaNにおけるquasi-cubic近似の破綻と新たに矛見される無極性面および半極性面GaN/AlGaN量子井戸構造の特異な光学異方性2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用特利学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy, The 8th Intern.2010
- Author(s)
  Y.Kawakami, A.Hashiya, A.Kaneta, M.Funato
- Organizer
  Symp.on Semicond.Light Emitting Devices
- Place of Presentation
  Beijing, China(Invited)
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum Wells2010
- Author(s)
  Y.Kawakami, M.Funato
- Organizer
  3rd GCOE International Symposium.
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Different behavior of semipolar and polar InGaN/GaN quantum wells with respect to pressure dependence of luminescence energy2010
- Author(s)
  G.Staszczak, T.Suski, P.Perlin, M.Funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 非極性面InGaN量子井戸における不均一広がりと偏光の関係2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  The 37th Intern.Symp.on Compound Semiconductors (ISCS Student Award受賞)
- Place of Presentation
  Takamatsu, Kagawa, Japan(招待講演)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010
- Author(s)
  A.Kaneta, T.Hashimoto, K.Nishimura, M.funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA(Invited)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] デュアルプローブSNOMを用いた銀細線におけるプラズモン異方性伝搬の観測2010
- Author(s)
  藤本亮, 橋本恒明, 金田昭男, 岡本晃一, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光2010
- Author(s)
  大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Breakdown of the quasicubic approximation in wurtzite crystals2010
- Author(s)
  R.Ishii, A.Kaneta, M.funato, Y.Kawakami
- Organizer
  29th Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Izu, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価～SNOMによるEfficiency droop機構の解明～2010
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  電子情報通信学会
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010
- Author(s)
  Y.Kawakami, A.Hashiya, A.Kaneta, M.Funato
- Organizer
  The 8th Intern.Symp.on Semiconductor Light Emitting Devices
- Place of Presentation
  Beijing, China(Invited)
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Influence of Inhomogeneous Broadening for Gain Polarization Switching in Green Semipolar InGaN Quantum Wells2010
- Author(s)
  K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Inhomogeneous broadening in Al-rich AlGaN/AlN single quantum wells2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  28th samahang Pisika ng Pilipinas Physics Congress
- Place of Presentation
  Antipolo City, Rizal, Philippines
- Year and Date
  2010-10-26
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010
- Author(s)
  Y.Kawakami, A.Hashiya, A.Kaneta, M.Funato
- Organizer
  The 8th Intern.Symp.on Semiconductor Light Emitting Devices
- Place of Presentation
  Beijing, China(招待講演)
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] GaNにおけるquasi-cubic近似の破綻と新たに予見される無極性面および半極性面GaN/AlGaN量子井戸構造の特異な光学異方性2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 強励起した高Al組成AlGaN/AlN量子井戸の深紫外発光メカニズム2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] ウルツ鉱構造におけるquasicubic近似の破綻2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会(講演奨励賞受賞記念講演)
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] GaNにおけるquasi-cubic近似の破綻と新たに予見される無極性面および半極性面GaN/AlGaN量子井戸構造の特異な光学異方性2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 強励起した高Al組成AlGaN/AlN量子井戸の深紫外発光メカニズム2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
- Organizer
  第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Breakdown of the quasicubic approximation in wurtzite crystals2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  29th Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Izu, Japan
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Photoluminescence properties of Al-rich AlGaN/AlN SQWs2010
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  3rd GCOE International Symposium
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] ウルツ鉱構造におけるquasicubic近似の破綻2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(Invited 講演奨励賞受賞記念講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 電子線励起法による高Al組成AlGaN/AlN量子井戸からの100mW深紫外発光2010
- Author(s)
  大音隆男, Ryan Banal, 片岡研, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会(講演奨励賞受賞)
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope, Intern.2010
- Author(s)
  A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
- Organizer
  Workshop on Nitride Semicond.
- Place of Presentation
  Tampa, Florida, USA(Invited)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Al_<0.79>Ga_<0.21>N/AlN量子井戸のフォトルミネッセンスの時間発展とMott転移付近の発光メカニズムの解析2010
- Author(s)
  大音隆男, 岩田佳也, 金田昭男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 非極性面hGaN量子井戸における不均一広がりと偏光の関係2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 非極性面InCaN量子井戸における不均一広がりと偏光の関係2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  第57回応用特利学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] InGaN量子井戸のキャリア拡散ダイナミクスの空間時間分解PL評価 -近接場光学顕微鏡によるEfficiency droop機構の解明-2010
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells2010
- Author(s)
  R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  The 37th Intern.Symp.on Compound Semiconductors
- Place of Presentation
  Takamatsu, Kagawa, Japan(Invited ISCS Student Award受賞)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] GaNにおけるquasi-cubic近似の破綻と新たに予見される無極性面および半極性面GaN/AlGaN量子井戸構造の特異な光学異方性2010
- Author(s)
  石井良太, 金田昭男, 船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Different behavior of semipolar and polar InGaN/GaN quantum wells with respect to pressure dependence of luminescence energy2010
- Author(s)
  G.Staszczak, T.Suski, P.Perlin, M.Funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Time-resolved photoluminescence of Al-rich AlGaN/AlN multiple quantum wells under selective excitation2010
- Author(s)
  Y.Iwata, T.Oto, A.Kaneta, R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  Intern.workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Photoluminescence Properties of Al-rich All-xGaxN/AlN Single Quantum Wells2010
- Author(s)
  R.G.Banal, T.Oto, M.Funato, Y.Kawakami
- Organizer
  JSAP the 57th Spring Meeting
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] デュアルプローブを用いた近接場光学顕微鏡の開発2010
- Author(s)
  橋本恒明, 西村活人, 金田昭男,船戸充, 川上養一
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 無極性面AlGaN/AlN量子井戸の光学特性に関する理論検討2010
- Author(s)
  小島一信, 山口敦史, 船戸充, 川上養一, 野田進
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors (Invited)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 近接場光学顕微鏡によるInGaN/GaN単一量子井戸構造の発光強度飽和マッピング2009
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  電子情報通信学会LQE研究会
- Place of Presentation
  徳島大学(徳島県)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-2009
- Author(s)
  川上養一, 船戸充
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性{11-22}InGaN/GaN量子井戸LEDにおける量子閉じ込めシュタルク効果2009
- Author(s)
  上田雅也, 井上大輔, 金田昭男, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}GaNバルク基板への厚膜InGaNの成長2009
- Author(s)
  井上大輔, 上田雅也, 船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells, 8th Intern.Conf.2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  on Nitride Semicond.
- Place of Presentation
  Jeju, Korea(Invited)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Growth and optical polarization properties of high-quality AlN and AlGaN/AlN quantum wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-28
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Valence band effective mass of non-c-plane InGaN/GaN quantum wells2009
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN量子井戸構造の高空間分解近接場発光マッピング測定2009
- Author(s)
  金田昭男, 上田雅也, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 近接場光学顕微鏡によるInGaN単一量子井戸構造の発光強度飽和マッピング2009
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Characterization and control of recombination process in nitride semicon ductors2009
- Author(s)
  Y.Kawakami, A.Kaneta, M.Ueda, M.Funato
- Organizer
  E-MRS Spring meeting 2009(Invited)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Ni微粒子を用いたInGaN/GaNコア・シェルナノワイヤの有機金属気相成長2009
- Author(s)
  船戸充, 畑田芳隆, 川上養一
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Characterization and control of recombination process in nitride semiconductors2009
- Author(s)
  Y.Kawakami, A.Kaneta, M.Ueda, M.Funato
- Organizer
  E-MRS Spring meeting 2009 (Invited)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 近接場光学顕微鏡によるInGaN単一量子井戸構造の発光強度飽和マッピング2009
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Temperature-dependent picosecond time-resolved cathodoluminescence of(In,Ga)N/GaN single quantum wells2009
- Author(s)
  L.Balet, P.Corfdir, S.Sonderegger, A.Kaneta, M.Funato, Y.Kawakami, J.D.Gani'ere, B.D.Pl'edran
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M. Funato, Y, Kawakami, Y. Narukawa and T. Mukai
- Organizer
  SPIE Photonic West
- Place of Presentation
  San Jose, California, USA(Invited)
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet2009
- Author(s)
  Y. Kawakarhi and M. Funato
- Organizer
  The 3rd Intern. Conf. on Display and Solid State Lighting (Invited)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2009-01-21
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Organizer
  SPIE Photonic West
- Place of Presentation
  San Jose, California, USA(Invited)
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Luminescence inhomogeneity caused by less-diffusive carriers in semipolar{11-22}InGaN/GaN quantum well active layers2009
- Author(s)
  M.Ueda, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 近接場光学顕微鏡によるInGaN/GaN単一量子井戸構造の発光強度飽和マッピング2009
- Author(s)
  橋谷享, 金田昭男, 船戸充, 川上養一
- Organizer
  電子情報通信学会LQE研究会
- Place of Presentation
  徳島大学(徳島県)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Uniaxial stress effects of excitons on nonpolar and semipolar GaN substrates2009
- Author(s)
  R.Ishii, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2009
- Author(s)
  Y, Kawakami, A. Kaneta, M. Ueda, and M. Funato
- Organizer
  DPG Spring Meeting
- Place of Presentation
  Dresden, Germany(Invited)
- Year and Date
  2009-03-24
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Characterization and control of recombination process in nitride semiconductors2009
- Author(s)
  Y. Kawakami, A. Kaneta, M. Ueda and M. Funato
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価2009
- Author(s)
  船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Luminescence inhomogeneity caused by less-diffusive carriers in semipolar{11-22}InGaN/GaN quantum well active layers2009
- Author(s)
  M.Ueda, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Intense Surface Emission from Al-rich (0001) A1GaN/A1N Quantum Wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 放射光マイクロX線回折を用いたマイクロフアセット上InGaN/GaN量子井戸構造の評価2009
- Author(s)
  榊篤史, 川村朋晃, 大野裕孝, 上田雅也, 船戸充, 川上養一, 木村滋, 坂田修身
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar(11-22)-oriented InGaN/GaN quantum wells2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  Asia Communications and Photonics Conference and Exhibition(Invited)
- Place of Presentation
  Shanghai, China
- Year and Date
  2009-11-03
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価2009
- Author(s)
  船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Valence band effective mass of non-c-plane InGaN/GaN quantum wells2009
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet Structures2009
- Author(s)
  Y. Kawakami, M. Funato
- Organizer
  The 3rd Intern. Conf. on Display and Solid State Lighting (Invited)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2009-01-21
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties2009
- Author(s)
  Y.Kawakami, M.Ueda, A.Kaneta, M.Funato
- Organizer
  The 2nd International Conference on White LEDs and Solid State Lighting (Invited)
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2009-12-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN量子井戸構造の高空間分解近接場発光マッピング測定2009
- Author(s)
  金田昭男, 上田雅也, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa and T. Muksi
- Organizer
  SPIE Photonic West (Invited)
- Place of Presentation
  San Jose, California, USA
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Deep ultraviolet emission mechanisms in highly excited Al_(0.79)Ga_(0.21)N/AlN multiple quantum wells2009
- Author(s)
  T.Oto, R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] ntense Surface Emission at 222nm from(0001)Al0.82Ga0.18N/AlN Quantum Wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  JSAP the 56th Spring Meeting
- Place of Presentation
  Ibaragi, Japan
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 一軸性応力印加下における無極性面および半極性面GaN基板の反射測定2009
- Author(s)
  石井良太, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Ni微粒子を用いたInGaN/GaNコア・シェルナノワイヤの有機金属気相成長2009
- Author(s)
  船戸充, 畑田芳隆, 川上養一
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2009
- Author(s)
  Y. Kawakami, A. Kaneta, M. Ueda, and M. Funato
- Organizer
  DPG Spring Meeting (Invited)
- Place of Presentation
  Dresden, Germany
- Year and Date
  2009-03-24
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN量子井戸LEDにおける量子閉じ込めシュタルク効果2009
- Author(s)
  上田雅也, 井上大輔, 金田昭男, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar III-nitride semiconductors for visible light emitters2009
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas
- Place of Presentation
  Tagaytay, Philippine (plenary)
- Year and Date
  2009-12-28
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-2009
- Author(s)
  川上養一, 船戸充
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar (11-22)-oriented InGaN/GaN quantum wells, Asia Communications and Photonics Conf.2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  and Exhibition
- Place of Presentation
  Shanghai, China(Invited)
- Year and Date
  2009-11-03
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-23
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] ntense Surface Emission at 222 nm from (0001) A10.82GaO.18N/AIN Quantum Wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  JSAP the 56th Spring Meeting
- Place of Presentation
  Ibaragi, Japan
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 放射光マイクロX線回折を用いたマイクロファセット上InGaNIGaN量子井戸構造の評価2009
- Author(s)
  榊篤史, 川村朋晃, 大野裕孝, 上田雅也, 船戸充, 川上養一, 木村滋, 坂田修身
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Luminescence inhomogeneity caused by less-diffusive carriers in semipolar {11-22} InGaN/GaN quantum well active layers2009
- Author(s)
  M.Ueda, A.Kaneta, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 放射光マイクロX線回析を用いたマイクロファセット上InGaN/GaN量子井戸構造の評価2009
- Author(s)
  榊篤史, 川村朋晃, 大野裕孝, 上田雅也, 船戸充, 川上養一, 木村滋, 坂田修身
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2009
- Author(s)
  Y. Kawakami, A. Kaneta, M. Ueda, M. Funato
- Organizer
  DPG Spring Meeting (Invited)
- Place of Presentation
  Dresden, Germany
- Year and Date
  2009-03-24
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Semipolar(11-22)-oriented InGaN/GaN LEDs and their optical properties2009
- Author(s)
  Y.Kawakami, M.Ueda, A.Kaneta, M.Funato
- Organizer
  The 2nd International Conference on White LEDs and Solid State Lighting(Invited)
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2009-12-16
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Positive biexciton binding energy confined in a localized center formed in a single InGaN/GaN auantum disk2009
- Author(s)
  Richard Bardoux, Akio Kaneta, M. Funato, Y. Kawakami, Akihiko Kikuchi and Katsumi Kishino
- Organizer
  JSAP the 56th Spring Meeting
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Growth and optical polarization properties of high-quality AlN and AlGaN/AlN quantum wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-29
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Modified MEE of high-quality Al-rich Al_xGa_<1-x>N/A1N (0001) quantum wells and its optical polarization anisotropy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-21
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  8th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea(invited)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Monolithic Polychromatic InGaN Light-Emitting Diodes Based on Micro-facet Structures2009
- Author(s)
  Y, Kawakami and M. Funato
- Organizer
  The 3rd Intern. Conf. on Display and Solid State Lighting
- Place of Presentation
  Seoul, Korea(Invited)
- Year and Date
  2009-01-22
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定2009
- Author(s)
  金田昭男, 上田雅也, 船戸充, 川上養一
- Organizer
  電子情報通信学会LQE研究会
- Place of Presentation
  徳島大学(徳島県)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 一軸性応力印加下における無極性面および半極性面GaN基板の反射測定2009
- Author(s)
  石井良太, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Positive biexciton binding energy confined in a localized center formed in a single InGaN/GaN quantum disk2009
- Author(s)
  Richard Bardoux, Akio Kaneta, M. Funato, Y. Kawakami, Akihiko Kikuchi, Katsumi Kishino
- Organizer
  JSAP the 56th spring Meeting
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties2009
- Author(s)
  Y. Kawakami, M. Ueda, A. Kaneta and M. Funato
- Organizer
  The 2nd International Conference on White LEDs and Solid State Lighting
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2009-12-16
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Intense Surface Emission from Al-rich(0001)AlGaN/AlN Quantum Wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Valence band effective mass of non-c-plane InGaN/GaN quantum wells2009
- Author(s)
  K.Kojima, M.Funato, Y.Kawakami, S.Noda
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 文部科学省科研費特定領域研究窒化物光半導体のフロンティア企画「紫外発光素子の進展」2009
- Author(s)
  名西〓之、吉田治正、川上養一、平松和政、船戸充、川西英雄、平山秀樹、天野浩
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-ORGANIZER-18069013
[Presentation] AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-2009
- Author(s)
  川上養一, 船戸充
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価2009
- Author(s)
  船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会(招待講演)
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar III-nitride semiconductors for visible light emitters2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas(plenary)
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-28
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性{11-22}InGaN量子井戸構造の高空間分解近接場発光マッピング測定2009
- Author(s)
  金田昭男, 上田雅也, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Characterization and control of recombination process in nitride semiconductors2009
- Author(s)
  Y.Kawakami, A.Kaneta, M.Ueda, M.Funato
- Organizer
  E-MRS Spring meeting 2009(Invited)
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar(11-22)-oriented InGaN/GaN quantum wells2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  Asia Communications and Photonics Conference and Exhibition(Invited)
- Place of Presentation
  Shanghai, China
- Year and Date
  2009-11-03
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 極性{11-22}IhGaN/GaN量子井戸における発光の空間分布2009
- Author(s)
  上田雅也, 金田昭男, 船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定2009
- Author(s)
  金田昭男, 上田雅也, 船戸充, 川上養一
- Organizer
  電子情報通信学会LQE研究会
- Place of Presentation
  徳島大学(徳島県)
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 非c面窒化物半導体量子井戸における価電子帯有効質量2009
- Author(s)
  小島一信, 船戸充, 川上養一, 野田進
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties2009
- Author(s)
  Y. Kawakami, M. Ueda, A. Kaneta, M. Funato
- Organizer
  The 2nd Intern. Conf. on White LEDs and Solid State Lighting
- Place of Presentation
  Taipei, Taiwan(invited)
- Year and Date
  2009-12-16
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN multiple quantum wells2009
- Author(s)
  T.Oto, R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 極性{11-22}InGaN/GaN量子井戸における発光の空間分布2009
- Author(s)
  上田雅也, 金田昭男, 船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Positive biexciton binding energy in a localization center of a single In GaN/GaN quantum disk : internal electric field drastically reduced2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 強励起条件下におけるA10.79Ga0.21N/AIN量子井戸の深紫外発光機構2009
- Author(s)
  大音隆男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Uniaxial stress effects of excitons on nonpolar and semipolar GaN substrates2009
- Author(s)
  R.Ishii, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Positive biexciton binding energy in a localization center of a single InGaN/GaN quantum disk : internal electric field drastically reduced2009
- Author(s)
  R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors(Invited)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Characterization and control of recombination process in nitride semiconductors2009
- Author(s)
  Y.Kawakami, A.Kaneta, M.Ueda, M.Funato
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France(Invited)
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Uniaxial stress effects of excitons on nonpolar and semipolar GaN substrates"2009
- Author(s)
  R.Ishii, M.Funato,Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 一軸性応力印加下における無極性面および半極性面GaN基板の反射測定2009
- Author(s)
  石井良太, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Organizer
  SPIE Photonic West (Invited)
- Place of Presentation
  San Jose, California, USA
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors(Invited)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai
- Organizer
  SPIE Photonic West (Invited)
- Place of Presentation
  San Jose, California, USA
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-2009
- Author(s)
  川上養一, 船戸充
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山(Invited)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Modifield MEE of high-quality Al-rich Al_xGa_(1-x)N/AlN(0001)quantum wells and its optical polarization anisotropy2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-21
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 強励起条件下におけるAl0.79Ga0.21N/AlN量子井戸の深紫外発光機構2009
- Author(s)
  大音隆男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Semipolar III-nitride semiconductors for visible light emitters2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas (plenary)
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-28
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Temperature-dependent picosecond time-resolved cathodoluminescence of (In, Ga)N/GaN single quantum wells2009
- Author(s)
  L.Balet, P.Corfdir, S.Sonderegger, A.Kaneta, M.Funato, Y.Kawakami, J.D.Ganiere, B.D.Pl'edran
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 強励起条件下におけるAl_<0.79>Ga_<0.21>N/AlN量子井戸の深紫外発光機構2009
- Author(s)
  大音隆男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Characterization and control of recombination process in nitride semiconductors2009
- Author(s)
  Y. Kawakami, A. Kaneta, M. Ueda, M. Funato
- Organizer
  E-MRS Spring meeting 2009
- Place of Presentation
  Strasbourg, France(Invited)
- Year and Date
  2009-06-11
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 非c面窒化物半導体量子井戸における価電子帯有効質量2009
- Author(s)
  小島一信, 船戸充, 川上養一, 野田進
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Multi-color light-emitting diodes based on GaN micro-structures2009
- Author(s)
  M.Funato, Y.Kawakami, Y.Narukawa, T.Mukai
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Jose, California, USA(Invited)
- Year and Date
  2009-01-29
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 高Al組合AlGaN/AlN量子井戸構造における高効率発光2009
- Author(s)
  大音隆男, Ryan Banal, 船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価2009
- Author(s)
  船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山(Invited)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties, The 2nd Intern.2009
- Author(s)
  Y.Kawakami, M.Ueda, A.Kaneta, M.Funato
- Organizer
  Conf.on White LEDs and Solid State Lighting
- Place of Presentation
  Taipei, Taiwan(Invited)
- Year and Date
  2009-12-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN/GaN量子井戸LEDにおける量子閉じ込めシュタルク効果2009
- Author(s)
  上田雅也, 井上大輔, 金田昭男, 船戸充, 川上養一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Semipolar (11-22)-oriented InGaN/GaN quantum wells2009
- Author(s)
  M.Funato, Y.Kawakam
- Organizer
  Asia Communications and Photonics Conference and Exhibition (Invited)
- Place of Presentation
  Shanghai, China
- Year and Date
  2009-11-03
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 高Al組成AlGaN/AlN量子井戸構造における高効率発光2009
- Author(s)
  大音隆男, Ryan Banal;船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}GaNバルク基板への厚膜InGaNの成長2009
- Author(s)
  井上大輔, 上田雅也, 船戸充, 川上養一
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Semipolar (11-22)-oriented InGaN/GaN quantum wells2009
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  Asia Communications and Photonics Conference and Exhibition
- Place of Presentation
  Shanghai, China(invited)
- Year and Date
  2009-11-03
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Growth and optical polarization properties of high-quality AlN and AIGaN/A1N quantum wells2009
- Author(s)
  R.G.Banal, M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-29
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Semipolar(11-22)-oriented InGaN/GaN LEDs and their optical2009
- Author(s)
  Y.Kawakami, M.Ueda, A.Kaneat, M.Funato
- Organizer
  The 2nd International Conference on White LEDs and Solid State Lighting(Invited)
- Place of Presentation
  TaiPei, Taiwan
- Year and Date
  2009-12-16
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Semipolar III-nitride semiconductors for visible light emitters2009
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  27th Physics Congress, Samahang Pisika ng Pilipinas(plenary)
- Place of Presentation
  Tagaytay, Philippine
- Year and Date
  2009-12-28
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 非極性面InGaN量子井戸の偏光制御に関する理論検討2008
- Author(s)
  小島一信, 船戸充, 川上養一外3名
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 非極性面InGaN量子井戸レーザの光学特性2008
- Author(s)
  小島一信, 船戸充, 川上養一外3名
- Organizer
  第55回応用物理学会関係連合講演会(INVITED)
- Place of Presentation
  千葉
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Anisotropic Stimulated Emission and Gain Formation ofNon c Plane InGaN Laser Diodes2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai
- Organizer
  8th Intern. Conf. on Physics of Light-Matter Coupling in Nanostructures
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2008-04-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures2008
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display2008
- Place of Presentation
  Ilsan, Korea(Invited)
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Structural evolution of directly-grown AIN on sapphire substrates2008
- Author(s)
  Ryan G. Banal, M. Funato and Y. Kawakami
- Organizer
  2nd Intern. Symp. on Growth of III-Nitrides
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Anisotropic Stimulated Emission and Gain Formation of Non c Plane InGaN Laser Diodes2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nagahama and T. Mukai
- Organizer
  8th Intern. Conf. on Physics of Light-Matter Coupling in Nanostructures
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2008-04-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Anisotropic Stimulated Emission and Gain Formation of Non c Plane InGaN Laser Diodes2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakatni, S. Nasahama, T. Mukai
- Organizer
  8th Intern. Conf. on Physics of Light-Matter Coupling in Nanostructures
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2008-04-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Controlling optical anisotropy of semipolar and nonpolar InGaN quantum wells2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, Y. Narukawa, T. Mukai and Y. Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors, (Invited)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y, Kawakami Mukai and Y, Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland(Invited)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 半極性{11-22}InGaN/GaN量子井戸における偏光ルミネッセンスの温度特性2008
- Author(s)
  上田雅也, 船戸充, 川上養一, 成川幸男, 向井孝志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性(11-22)GaNバルク基板上InGaN/GaN量子井戸の歪み解析2008
- Author(s)
  井上大輔, 船戸充, 川上養一外3名
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 白色および波長可変IhGaN/GaNマイクロファセット発光ダイオードの作製2008
- Author(s)
  林敬太, 船戸充, 川上養一外3名
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato, Y.Narukawa and T. Mukai
- Organizer
  The 3rd Intern. Conf. Smart Materials Structures Systems
- Place of Presentation
  Acireale, Sicily, Italy(Invited)
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Controlling optical anisotropy of semipolar and nonpolar InGaN auantum wells2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nasahama, T. Mukai
- Organizer
  Intern, workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 半極性{11-22}InGaN/GaN量子井戸における光学異方性の回転2008
- Author(s)
  上田雅也, 船戸充, 川上養一外2名
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures2008
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 (Invited)
- Place of Presentation
  Ilsan, Korea
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 非極性面InGaN量子井戸レーザの光学特性2008
- Author(s)
  小島一信, 船戸充, 川上養一, 枡井真吾, 長濱慎一, 向井孝志
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  千葉(Invited)
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato, Y. Narukawa and T. Mukai
- Organizer
  The 3rd Intern. Conf. Smart Materials Structures Systems (Invited)
- Place of Presentation
  Acireale, Sicily, Italy
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y. Kawakami
- Organizer
  Intern, workshop on Nitride Semiconductors, (Invited)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Characterization and Control of Recombination Dynamics in Low-dimensional InGaN-based Semiconductors2008
- Author(s)
  Y. Kawakami, A. Kaneta, M. Funato, Y. Narukawa, T Mukai
- Organizer
  The 3rd Intern. Conf. Smart Materials Structures Systems (Invited)
- Place of Presentation
  Acireale, Sicily, Italy
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] A New Growth Method of High-Quality AlN on Sapphire Substrates2008
- Author(s)
  R. Banal, M. Funato and Y. Kawakami
- Organizer
  Intern. Symp. on Semiconductor Light Emitting Devices
- Place of Presentation
  Phoenix, USA
- Year and Date
  2008-05-01
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Anisotropic stimulated emission and gan formation of non c plane InGaN laser diodes2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nasahama, T. Mukai
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y. Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland(Invited)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Anisotropic stimulated emission and gain formation of non c plane InGaN laser diodes2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Naeahama and T. Mukai
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers2008
- Author(s)
  M. Ueda, M. Funato, Y. Narukawa, T. Mukai, Y. Kawakami
- Organizer
  Intern. workshop on Nitride Semiconductors, (Invited)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Characterization and Control of recombination dynamics in low-dimensional InGaN-based semiconductors, The 3rd Intern.Conf.2008
- Author(s)
  Kawakami, A.Kaneta, M.Funato, Y.Narukawa, T.Mukai
- Organizer
  Smart Materials Structures Systems
- Place of Presentation
  Acireale, Sicily, Italy(Invited)
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures2008
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 (Invited)
- Place of Presentation
  Ilsan, Korea
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures2008
- Author(s)
  M. Funato, Y. Kawakami
- Organizer
  Intern. Meeting on Information Display, Intern. Display Manufacturing, Conf. and Asia Display 2008 (Invited)
- Place of Presentation
  Ilsan, Korea
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Polarization anisotropy in semipolar InGaN/GaN quantum well active layers, Intern.2008
- Author(s)
  M.Ueda, M.Funato, Y.Narukawa, T.Mukai, Y.Kawakami
- Organizer
  Workshop on Nitride Semicond.
- Place of Presentation
  Montreux, Switzerland(Invited)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Monolithic polychromatic InGaN light-emitting diodes based on micro-facet structures, Intern.2008
- Author(s)
  M.Funato, Y.Kawakami
- Organizer
  Meeting on Information Display 2008
- Place of Presentation
  Ilsan, Korea(Invited)
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Deep-Ultraviolet Emission of AlGaN/AIN MQWs grown by Modified Migration Enhanced Epitaxy2008
- Author(s)
  R. G. Banal, 船戸充, 川上養一
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Controlling optical anisotropy of semipolar and nonpolar InGaN auantum wells2008
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami, S. Nagahama. and T. Mukai
- Organizer
  Intern. workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] 半極性{11-22}InGaN/GaN量子井戸における偏光ルミネッセンスの温度特性2008
- Author(s)
  上田雅也, 船戸充, 川上養一, 成川幸男, 向井孝志
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 高In組成InGaNの輻射・非輻射再結合過程の解明と制御2007
- Author(s)
  川上養一, 船戸充外5名
- Organizer
  第68回応用物理学会学術講演会(INVITED)
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 高In組成InGaNの輻射・非輻射再結合過程の解明と制御2007
- Author(s)
  川上養一, 船戸充, 金田昭男, 上田雅也, 小島一信, 成川幸男, 向井孝志
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌(Invited)
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {11-22} GaN bulk substrates2007
- Author(s)
  M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, T. Mukai
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌(Invited)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] InGaN/GaN multi-facet light emitting diodes toward tailor-made solid-state lighting without phosphors2007
- Author(s)
  M. Funato, Y. Kawakami外5名
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Polarization properties of InGaN/GaN light emitting diodes on{11-22}GaN bulk substrates2007
- Author(s)
  M. Ueda, M. Funato, and Y. Kawakami外3名
- Organizer
  The 26th Electronic Materials Symposium
- Place of Presentation
  Shiga, Japan
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Local Spectroscopic Investigations on Semipolar InGaN-Based Nanostructures and Their Application to LEDs2007
- Author(s)
  Y. Kawakami, A. Kaneta, K. Nishizuka, M. Ueda, K. Kojima, M. Funato, Y. Narukawa, T. Mukai
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA(Invited)
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Local microscopy investigations of low dimensional nitrides2007
- Author(s)
  Y. Kawakami, A. Kaneta, K. Nishizuka, M. Funato, Y. Narukawa and T. Mukai
- Organizer
  7th Intern. Conf. of the PLMCN series (Invited)
- Place of Presentation
  Havana, Cuba
- Year and Date
  2007-04-16
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Local spectroscopic investigations on semipolar InGaN-based nanostructures and their application to LEDs2007
- Author(s)
  Y. Kawakami, M. Funato外4名(INVITED)
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Light emitting devices based on semipolar-oriented InGaN/GaN quantum wells2007
- Author(s)
  Y. Kawakami, M. Ueda, M. Funato, Y. Narukawa, T. Mukai
- Organizer
  The 14th Intern. Display Workshops
- Place of Presentation
  Sapporo, Japan(invited)
- Year and Date
  2007-12-07
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Local Spectroscopic Investigations on Semipolar InGaN-Based Nanostructures and Their Application to LEDs, 7th Intern.Conf.2007
- Author(s)
  Y.Kawakami, A.Kaneta, K.Nishizuka, M.Ueda, K.Kojima, M.Funato, Y.Narukawa, T.Mukai
- Organizer
  on Nitride Semicond.
- Place of Presentation
  Las Vegas, USA(Invited)
- Year and Date
  2007-07-10
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] InGaN量子井戸レーザの光学利得と内部電界の関係2007
- Author(s)
  小島一信, 船戸充, 川上養一外3名
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Structural evolution of AIN grown directly on-sapphire substrates by metalorganic vapor phase epitaxy2007
- Author(s)
  R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Observation of optical gain spectra for ultra violet, violet, blue and aquamarine InGaN/InGaN quantum well laser diodes2007
- Author(s)
  K. Kojima, M. Funato, and Y. Kawakami外4名
- Organizer
  The 26th Electronic Materials Symposium
- Place of Presentation
  Shiga, Japan
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Relationship between Threading Dislocation and Nonradiative Recombination Centers in Green Emitting InGaN-Based Quantum, Wells Studied by Scanning Near-Field Optical Microscope2007
- Author(s)
  A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y, Kawakami
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] 半極性{11-22}GaNバルク基板上InGaN/GaN量子井戸活性層の偏光特性2007
- Author(s)
  上田雅也, 船戸充, 川上養一, 成川幸男, 向井孝志
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌(Invited)
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 半極性・無極性InGaN量子井戸の光学的異方性に関する理論解析2007
- Author(s)
  小島一信, 加門宏章, 船戸充, 川上養一
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Relationship between threading dislocations and nonradiative recombination centers in green emitting InGaN-based quantum wells studied by scanning near-field optical microscope2007
- Author(s)
  A. Kaneta, M. Funato, and Y. Kawakami外2名
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Theoretical investigation on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells2007
- Author(s)
  K.Kojima, H. Kamon, M. Funato, and Y. Kawakami
- Organizer
  34th Intern. Symp. on Compound Semiconductors
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] 半極性{11-22}GaNバルク基板上InGaN/GaN量子井戸活性層の偏光特性2007
- Author(s)
  上田雅也, 船戸充, 川上養一外2名
- Organizer
  第68回応用物理学会学術講演会(INVITED)
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Strong polarization effects in InGaN/GaN light emitting diodes grown on semipolar {11-22} GaN bulk substrates2007
- Author(s)
  M. Ueda, M. Funato, and Y. Kawakami外2名
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes2007
- Author(s)
  K. Kojima, M. Funato, and Y. Kawakami, 外4名
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Local Spectroscopic Investigations on Semipolar InGaN-Based Nanostructures and Their Application to LEDs2007
- Author(s)
  Y, Kawakami, A. Kaneta, K. Nishizuka, M. Ueda, K. Kojima, M. Funato, Y. Narukawa, and T. Mukai
- Organizer
  7th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA(Invited)
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Developments of semipolar (11-22) InGaN/GaN quantum wells and light emitting diodes2007
- Author(s)
  M. Funato, Y. Kawakami外3名(INVITED)
- Organizer
  The 26th Electronic Materials Symposium
- Place of Presentation
  Shiga, Japan
- Year and Date
  2007-07-06
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Light emitting devices based on semipolar-oriented InGaN/GaN quantum wells2007
- Author(s)
  Y. Kawakami and M. Funato外3名(INVITED)
- Organizer
  The 14th Intern. Display Workshops
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2007-12-07
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Light emitting devices based on semipolar-oriented InGaN/GaN quantum wells2007
- Author(s)
  Y, Kawakami, M. Ueda, M. Funato, Y. Narukawa and T. Mukai
- Organizer
  The 14th Intern. Display Workshops
- Place of Presentation
  Sapporo, Japan(Invited)
- Year and Date
  2007-10-07
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Local Spectroscopic Investigations on Semipolar In GaN-Based Nanostructures and Their Application to LEDs2007
- Author(s)
  Y. Kawakami, A. Kaneta, K. Nishizuka, M. Ueda, K. Kojima, M. Funato, Y. Narukawa
- Organizer
  7th Intern. Conf. on Nitride Semiconductors (Invited)
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] Developments of semipolar (11-22) InGaN/GaN quantum wells and light emitting diodes2007
- Author(s)
  M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Mukai
- Organizer
  The 26th Electronic Materials Symposium
- Place of Presentation
  滋賀(Invited)
- Year and Date
  2007-07-06
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar{11-22}GaN bulk substrates2007
- Author(s)
  M. Funato and Y. Kawakami外5名
- Organizer
  第68回応用物理学会学術講演会(INVITED)
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] InGaN/GaNマイクロファセット多波長発光ダイオードの作製と評価2007
- Author(s)
  林敬太, 船戸充, 川上養一外4名
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19206036
[Presentation] Local microscopy investigations of low dimensional nitrides2007
- Author(s)
  Y, Kawakami, A. Kaneta, K. Nishizuka, M. Funato, Y. Narukawa and T. Mukai
- Organizer
  7th Intern. Conf. of the PLMCN series in Havana
- Place of Presentation
  Cub(Invited)
- Year and Date
  2007-04-16
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Multi-mode SNOM-PL mapping in the vicinity of nonradiative recombination center of InGaN single quantum wells2006
- Author(s)
  A. Kaneta, M. Funato, Y. Narukawa, T. Mukai and Y, Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductor
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2006-10-24
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] Local recombination processes in InGaN studied by temporally and spatially resolved photoluminescence spectroscopy2006
- Author(s)
  A, Kaneta, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai
- Organizer
  8th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies
- Place of Presentation
  Cadiz, Spain
- Year and Date
  2006-05-15
- Data Source
  KAKENHI-PROJECT-18206002
[Presentation] InGaN/GaN light-emitting diodes on semipolar {11-22} GaN bulk crystals2006
- Author(s)
  M. Funato
- Organizer
  Intern. Workshop on Nitride Semiconductor
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2006-10-09
- Data Source
  KAKENHI-PLANNED-18069007
[Presentation] アルミニウムを用いたInGaN系量子井戸の表面プラズモン発光増強
- Author(s)
  立石和隆，Xu Xiaoying，船戸　充, 川上養一, 岡本晃一, 玉田　薫
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Large shifts of free excitonic transition energies and phonon frequency of AlN coherently-grown on 6H-SiC (0001) due to strong in-plane compressive strain
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Organizer
  10th Intern. Conf. on Nitride Semiconductor
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ
- Author(s)
  川上養一, 金田昭男, 船戸　充
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Homoepitaxy of AlN on semipolar (1-102) substrates grown by physical vapor transport method
- Author(s)
  S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
- Organizer
  2013 JSAP-MRS Joint Symposia, Sympsium　（応物併設）
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlN量子井戸における発光メカニズムの励起密度依存性
- Author(s)
  大音隆男, R. G. Banal, 船戸　充, 川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of recombination lifetimes on exciton hopping in semipolar (11-22) InGaN quantum wells
- Author(s)
  T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Well width dependence of exciton dynamics in semipolar (11-22) InGaN/GaN single quantum wells
- Author(s)
  T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  40th Intern. Symp. on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of substrate orientation on GaN homoepitaxial layers:
- Author(s)
  J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性面AlGaN/AlN量子井戸発光の面内偏光制御
- Author(s)
  市川修平, 石井良太, 船戸　充, 川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Hydrostatic and uniaxial deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN
- Author(s)
  R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
- Organizer
  31st Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Largest electron-hole exchange interaction among typical III-V and II-VI compound semiconductors observed in AlN
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Observation of Exciton-Phonon Interaction in AlGaN/AlN Quantum Wells
- Author(s)
  R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  4th Intern. Symp. on Growth of III-Nitrides
- Place of Presentation
  Saint-Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] SiC上ヘテロステップフローによる6H, 4H-GaNの成長と評価
- Author(s)
  高木勝也, 石山裕策, 西中淳一, 船戸充, 川上養一, 橋本明弘, 田中　悟
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(1122)InGaN/GaN量子井戸における励起子ダイナミクスの井戸幅依存性
- Author(s)
  尾崎拓也, 西中淳一, 船戸　充，川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 近接場分光法による窒化物半導体の再結合機構解明
- Author(s)
  川上養一, 船戸　充, 金田昭男
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] InGaN/GaN SQWにおける非輻射再結合のキャリアダイナミクス
- Author(s)
  井上航平, 金田昭男, 船戸　充，川上養一，岡本晃一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Structural and optical characterization of 2H-AlN coherently-grown on 6H-SiN (0001) by plasma-assisted molecular beam epitaxy
- Author(s)
  M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
- Organizer
  2013 JSAP-MRS Joint Symposia, Sympsium　（応物併設）
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Origin of exciton localization in Al-rich AlGaN/AlN quantum wells
- Author(s)
  T. Oto, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Determination of deformation potentials in GaN and AlN for the design of strained AlGaN-based quantum structures
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  E-MRS
- Place of Presentation
  Strasbourg, France
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Temperature dependent exciton dynamics in Al-rich AlGaN/AlN quantum wells assessed by cathodoluminescence mapping measurements
- Author(s)
  大音隆男, 岩田佳也, D. Gachet，M. Benameur，R. Banal，船戸　充，川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性{11-22}GaNホモエピタキシにおけるV/III比の影響
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性 (11-22) InGaN/GaN 量子井戸における励起子ダイナミクス
- Author(s)
  尾崎拓也, 西中淳一, 船戸　充, 川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate
- Author(s)
  A. Kaneta, T. Hira, Y. S. Kim, M. Funato, Y. Kawakami, T. Miyoshi, and S. Nagahama
- Organizer
  10th Conf. on Lasers and Electo-Optics Pasific Rim, and 18th OptoElectonics and Communications Conf/Photonics in Switching 2013
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum wells
- Author(s)
  岩田佳也, 大音隆男, D. Gachet，M. Benameur，R. Banal，船戸　充，川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高品質半極性面AlGaN/AlN量子井戸構造における内部電界の抑制と短い輻射再結合寿命の実現
- Author(s)
  市川修平, 船戸　充, 川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Emission properties of localized excitons in weakly excited Al-rich AlGaN/AlN quantum wells
- Author(s)
  T. Oto, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  31st Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 窒化物半導体ナノ構造の励起子ダイナミクスと超高効率発光素子実現へのアプローチ
- Author(s)
  船戸　充，金田昭男，川上養一
- Organizer
  レーザー学会創立40周年記念学術講演会第34回年次大会
- Place of Presentation
  北九州国際会議場, 福岡県
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(11-22)InGaN/AlGaN応力補償超格子のコヒーレント成長
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Thick and Crack-free AlN Films by NH3 Nitridation of Sapphire Substrate
- Author(s)
  R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(-1-12-2)GaN基板上に成長したInGaN低次元構造の光学特性
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 緑色発光InGaN量子井戸の近接場光学分光
- Author(s)
  金田昭男, 船戸　充, 川上養一
- Organizer
  第５回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
- Place of Presentation
  日本科学未来館, 東京都
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Optical properties of Al-rich AIGaN quantum wells and their application to electron-beam pumped Deep-UV emitters
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  UV-DUV Plasmonics and Nanophotonics Workshop
- Place of Presentation
  Osaka, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Contribution of low inhomogeneous broadening to the optical gain of a (0001) oriented InGaN-based green laser diode
- Author(s)
  金　潤碩, 金田昭男，船戸　充, 川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 非極性面上InGaN/GaN多重量子井戸の異方性を考慮した臨界膜厚
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所, 東京都
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] InGaN/GaN量子井戸面内におけるキャリアの伝播・再結合過程の観測
- Author(s)
  西川恭平，金田昭男，船戸　充，川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlN量子井戸におけるPLスペクトルの励起強度依存性
- Author(s)
  岩田佳也, R. G. Banal, 船戸　充, 川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Optical Gain Properties of (0001) Oriented InGaN-Based Green Laser Diodes with Low Threshold Current Density
- Author(s)
  Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi and S. Nagahama
- Organizer
  16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] High Quality AlGaN-Based Quantum Wells for Deep-Ultraviolet Emitters
- Author(s)
  M. Funato
- Organizer
  16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Busan, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Author(s)
  Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi, S. Nagahama
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学, 大阪府
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Temperature-induced luminescence peak shift correlated with exciton lifetime in semipolar (11-22) InGaN/GaN quantum wells
- Author(s)
  T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  2013 JSAP-MRS Joint Symposia, Sympsium　（応物併設）
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Does temperature-induced ``S-shaped'' photoluminescence peak shift directly indicate potential tail?
- Author(s)
  T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Growth characteristics of semipolar {11-22} GaN homoepitaxial layers
- Author(s)
  J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Deep UV photoluminescence mappings of Al-rich AlGaN/AlN quantum wells by confocal microscopy
- Author(s)
  Y. Iwata, A. Kaneta, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Structural and optical characterization of homoepitaxial AlN film
- Author(s)
  R. Ishii, K. Matsuda, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  31st Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Thick and Crack-free AlN Films by NH3 Nitridation of Sapphire Substrate
- Author(s)
  R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Verification of internal field presence in InGaN/GaN semipolar quantum wells
- Author(s)
  G. Staszczak, T. Suski, P. Perlin, M. Funato and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Synthesis of aluminum nitride powders emitting in near ultraviolet spectral range
- Author(s)
  P. T. Wu, M. Funato and Y. Kawakami
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Impact of crystal orientation on InGaN-based efficient visible light emitters
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  Conf. on LED and its industrial application '13 (LEDIA'13)
- Place of Presentation
  Yokohama, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(1-1-2)AlN基板上へのAlGaN/AlN量子井戸構造の作製
- Author(s)
  市川修平, 船戸　充, 永田俊郎, 川上養一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学, 京都府
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 脱励起光下顕微フォトルミネッセンスによるInGaN/GaN量子井戸のキャリア再結合機構の評価
- Author(s)
  田中優也，金田昭男，船戸　充，川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Critical layer thicknesses of anisotropic heterostructures: non-c-plane InGaN/GaN multiple quantum wells
- Author(s)
  J. Nishinaka, M. Funato and Y. Kawakami
- Organizer
  31st Electronic Materials Symposium
- Place of Presentation
  Laforet Shuzenji, Shizuoka
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Optimal growth pressure for high quality semipolar (1-102) AlN homoepitaxial films
- Author(s)
  S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
- Organizer
  40th Intern. Symp. on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Excitonic fine structure of AlN studied by polarization-resolved photoluminescence spectroscopy
- Author(s)
  R. Ishii, M. Funato and Y. Kawakami
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] New polytypes (4H, 6H) of III-nitrides grown by hetero-step-flow mode on vicinal SiC subtrates
- Author(s)
  Y. Ishiyama, M. Takaki, Y. Hagihara, J. Nishinaka, M. Funato, Y. Kawakami, A. Hashimoto and S. Tanaka
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] へテロステップフローによる6H, 4H-GaNの成長と評価
- Author(s)
  石山裕策, 西中淳一, 船戸　充, 川上養一, 橋本明弘, 田中　悟
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所, 東京都
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Exciton localization characteristics in Al-rich AlGaN/AlN quantum wells
- Author(s)
  T. Oto, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性(11-22)GaN基板上InGaN単一量子井戸における面内発光分布の近接場光学顕微鏡による評価
- Author(s)
  尾崎拓也, 西中淳一, 金田昭男, 船戸　充, 川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] マクロなステップ構造を有するAlN上へのAlGaN/AlN量子構造の作製
- Author(s)
  林　佑樹，Ryan Banal，M. Funato，Y. Kawakami
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 選択励起条件下における高Al組成AlGaN/AlN量子井戸の弱励起時間分解発光測定
- Author(s)
  岩田佳也, 金田昭男, R. G. Banal, 船戸　充, 川上養一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学, 京都府
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Structure Dependence of Surface Plasmon Enhanced Photoluminescence
- Author(s)
  Xiaoying Xu，M. Funato，Y. Kawakami，K. Okamoto and K. Tamada
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Role of Growth Spirals in AlGaN Quantum Wells
- Author(s)
  R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 緑色発光{20-21}GaN基板上InGaN量子井戸の近接場顕微発光測定
- Author(s)
  金田昭男, 金　潤碩, 船戸　充, 川上養一, 塩谷陽平, 京野孝史, 上野昌紀, 中村孝夫
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] (1102)基板上へのAlNホモエピタキシーにおける成長圧力の最適化
- Author(s)
  市川修平, 船戸　充, 永田俊郎, 川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Remarkably suppressed luminescence inhomogeneity in state-of-the-art InGaN green emitting structures
- Author(s)
  A. Kaneta, M. Funato and Y. Kawakami
- Organizer
  2013 JSAP-MRS Joint Symposia, Sympsium　（応物併設）
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlN量子井戸における励起子局在の起源
- Author(s)
  大音隆男, ライアンバナル, 船戸　充, 川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 窒化アルミニウムにおける一軸性変形ポテンシャルの同定
- Author(s)
  石井良太，金田昭男，船戸　充，川上養一
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Formation Mechanism and Elimination of Lowangle Grain Boundaries in AlN through Control of Heterointerface with Sapphire (0001) Substrate
- Author(s)
  Y. Hayashi, R. G. Banal, K. Matsuda, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Exciton-LO Phonon Coupling Strength in AlGaN/AlN Quantum Wells
- Author(s)
  R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Strong Exciton-Phonon Interaction in AlGaN/AlN Quantum Wells
- Author(s)
  R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Mechanism of pit generation and elimination of semipolar (1-102) AlN homoepitaxial films
- Author(s)
  S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
- Organizer
  10th Intern. Conf. on Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Remarkable surface morphology improvement of semipolar (1-102) AlN homoepitaxial films by nucleation control growth
- Author(s)
  S. Ichikawa, M. Funato S. Nagata and Y. Kawakami
- Organizer
  32nd Electronic Materials Symposium
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性GaNバルク基板上への緑色発光InGaN量子井戸の作製と物性
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  第５回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
- Place of Presentation
  日本科学未来館, 東京都
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 共焦点顕微鏡による高Al組成AlGaN/AlN量子井戸のPLマッピング
- Author(s)
  岩田佳也, 金田昭男, ライアンバナル, 船戸　充, 川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Inhomogeneously broadened gain spectra in InGaN based laser diodes
- Author(s)
  K. Kojima, M. Funato, Y. Kawakami and S. Noda
- Organizer
  DYCE-ASIA Workshop
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Epitaxial Growth of AlN and Related Alloys
- Author(s)
  M. Funato
- Organizer
  Collaborative Conference on Crystal Growth
- Place of Presentation
  Orlando, Florida, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Semipolar faceting for InGaN-based polychromatic LEDs
- Author(s)
  M. Funato and Y. Kawakami
- Organizer
  CLEO:2013
- Place of Presentation
  San Jose, USA
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] AlNの励起子束縛エネルギー：電子正孔交換相互作用と励起子格子相互作用
- Author(s)
  石井良太, 船戸　充, 川上養一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Multi-wavelength light emission from threedimensional AlGaN quantum wells fabricated on facet structures
- Author(s)
  K. Kataoka, M. Yamaguchi, K. Fukushima, M. Funato and Y. Kawakami
- Organizer
  2014 Photonics West
- Place of Presentation
  San Francisco, California, USA
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Exciton Localization Phenomena in Al-rich AlGaN/AlN Quantum Wells
- Author(s)
  T. Oto, R. G. Banal, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] AlNのPLスペクトルにおける特異なピークの起源
- Author(s)
  石井良太, 船戸　充, 川上養一
- Organizer
  弟60回応用物理学会関係連合講演会
- Place of Presentation
  神奈川工科大学, 神奈川県
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 高Al組成AlGaN/AlN量子井戸における光学利得特性の井戸幅依存性
- Author(s)
  大音隆男, R. G. Banal, 船戸　充, 川上養一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学, 京都府
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Nanoscopic PL properties in green emitting InGaN single quantum well on {20-21} GaN substrate probed by scanning near field optical microscopy
- Author(s)
  A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Exciton Dynamics in Semipolar (11-22) InGaN Single Quantum Wells
- Author(s)
  J. Nishinaka, T. Ozaki, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] Determination of the deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN as well as GaN
- Author(s)
  R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] (Al,Ga)N系歪み量子構造の電子状態計算
- Author(s)
  石井良太, 船戸　充, 川上養一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学, 京都府
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] III-nitride semiconductors: current status and future prospect
- Author(s)
  Y. Kawakami and M. Funato
- Organizer
  1st KANSAI Nanoscience and Nanotechnology International Symposium
- Place of Presentation
  Osaka, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] `New polytypes (4H, 6H) of III-nitrides grown by hetero-step-flow mode on vicinal SiC surfaces
- Author(s)
  Y. Ishiyama, M. Takaki, Y. Hagihara, J. Nishinaka, M. Funato, Y. Kawakami, A. Hashimoto and S. Tanaka
- Organizer
  Intern. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-21226001
[Presentation] 半極性{11-22}GaNホモエピタキシャル膜における不純物の取り込み
- Author(s)
  西中淳一, 船戸　充, 川上養一
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学, 京都府
- Data Source
  KAKENHI-PROJECT-21226001

1. KAWAKAMI Yoichi (30214604)

# of Collaborated Projects: 16 results

# of Collaborated Products: 959 results
2. FUJITA Shizuo (20135536)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
3. 石井良太 (60737047)

# of Collaborated Projects: 6 results

# of Collaborated Products: 75 results
4. OKAMOTO Koichi (50467453)

# of Collaborated Projects: 5 results

# of Collaborated Products: 46 results
5. FUJITA Shigeo (30026231)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. MICHELETTO Ruggero (50397600)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. NANISHI Yasushi (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. YOSHIKAWA Akihiko (20016603)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. AMANO Hiroshi (60202694)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. KISHINO Katsumi (90134824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. AKASAKI Isamu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. SASAKI Akio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. TAKAHASHI Kiyoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. NISHINAGA Tatau

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. UENOYAMA Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 成田貴人

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 三宅秀人

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
19. 松田祥伸

# of Collaborated Projects: 0 results

# of Collaborated Products: 5 results
20. 藤田茂雄

# of Collaborated Projects: 0 results

# of Collaborated Products: 7 results
21. 正直花奈子

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
22. BANAL R.G.

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Funato Mitsuru 船戸 充

Mitsuru Funato 船戸 充

FUNATO Mitsuru 船戸 充

Research Projects

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Visible, long wavelength LEDs based on In-rich InGaN on ScAlMgO4 substratesPrincipal Investigator

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Elucidation and control of carrier recombination processes for the realization of AlGaN-based ultra-high efficiency ultraviolet light emitting devicesPrincipal Investigator

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Fabrication of nitride-semiconductor-based light-emitters on a reusable substratePrincipal Investigator

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Development of nitride-semiconductor based green laser diodes on a novel semipolar planePrincipal Investigator

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Funato Mitsuru 船戸充

Mitsuru Funato 船戸充

FUNATO Mitsuru 船戸充