Yao Yongzhao 姚永昭

… Alternative Names

YAO YONGZHAO 姚永昭

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Researcher Number	80523935
Other IDs	https://orcid.org/0000-0002-7746-4204
Affiliation (Current)	2024: 三重大学, 研究基盤推進機構, 教授
Affiliation (based on the past Project Information) *help	2024: 三重大学, 研究基盤推進機構, 教授 2021 – 2023: 一般財団法人ファインセラミックスセンター, その他部局等, 主任研究員 2022: 一般財団法人ファインセラミックスセンター, 材料技術研究所, 主任研究員 2016 – 2020: 一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 2017: 一般財団法人ファインセラミックスセンター, 材料技術研究所, 上級研究員 2014 – 2015: 一般財団法人ファインセラミックスセンター, その他部局等, 研究員
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering Except Principal Investigator Basic Section 26050:Material processing and microstructure control-related / Basic Section 30010:Crystal engineering-related / Crystal engineering / Production engineering/Processing studies
Keywords	Principal Investigator X線トポグラフィー / 転位 / Ga2O3 / 結晶欠陥 / オペランド観測 / 酸化ガリウム / バーガースベクトル / エッチピット / X-ray topography / dislocation … More / operando / power device / crystal defect / SiC / X線回折 / 曲率半径 / 異常透過 / 放射光X線トポグラフィー / 結晶格子欠陥 / パワーデバイス / 化学エッチング / 単結晶 / 半導体材料 / 結晶品位 / 透過型電子顕微鏡 / 放射光トポグラフィ / TEM / etch pit / gallium oxide … More Except Principal Investigator 転位 / GaN / スクラッチ / インデンテーション / 多光子励起顕微鏡 / TEM / 積層欠陥 / 結晶成長 / 高電子移動度トランジスタ / 窒化物半導体 / 多光子顕微鏡 / 加工導入欠陥 / らせん転位 / ビッカース / STEM / 半導体 / 結晶工学 / 拡張 / EBIC / 部分転位 / 基底面転位 / M面 / CL / 非極性面 / 4H-SiC / ダイヤ / SiC / EBSD / 欠陥 / ＳｉＣ / 潜傷 / 加工 / 単結晶 / 材料工学 Less

Proposal of new nitride semiconductor electronic device structure using AlN substrate and its crystal growth
- Principal Investigator
  
  岡田成仁
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Yamaguchi University
ワイドバンドギャップ半導体結晶の加工変質層厚に非破壊評価法の開発
- Principal Investigator
  
  石川由加里
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 26050:Material processing and microstructure control-related
- Research Institution
  Japan Fine Ceramics Center
実動作中のワイドギャップ半導体パワーデバイスにおける転位の動的な挙動の観察Principal Investigator
- Principal Investigator
  
  姚永昭
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Japan Fine Ceramics Center
パワーデバイス劣化機構の解明に向けた格子欠陥のオペランド観察技術の開発Principal Investigator
- Principal Investigator
  
  姚永昭
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
  Japan Fine Ceramics Center
Investigation of defect structure and the mechanism of defect introduction in wide bandgap semiconductor crystals by processing
- Principal Investigator
  
  Ishikawa Yukari
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 26050:Material processing and microstructure control-related
- Research Institution
  Japan Fine Ceramics Center
Development of large-area dislocation detection and classification techniques for next-generation power semiconductor beta-Ga2O3Principal Investigator
- Principal Investigator
  
  Yao Yongzhao
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Japan Fine Ceramics Center
Effects of defects and surface structure on oxide film on non-polar 4H-SiC plane
- Principal Investigator
  
  Yukari Ishikawa
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Japan Fine Ceramics Center
Development of crystal defect revelation technique for next-generation power semiconductor material Ga2O3Principal Investigator
- Principal Investigator
  
  YAO YONGZHAO
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Japan Fine Ceramics Center
Investigation of formation mechanism of crystal defects induced by machining at the surface of single crystal SiC
- Principal Investigator
  
  ISHIKAWA Yukari
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Japan Fine Ceramics Center

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 Other

All Journal Article Presentation Patent

[Journal Article] Lattice misorientation at domain boundaries in β‐Ga2O3 single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography2023
- Author(s)
 Yao Yongzhao、Hirano Keiichi、Sasaki Kohei、Kuramata Akito、Sugawara Yoshihiro、Ishikawa Yukari
- Journal Title
 
 Journal of the American Ceramic Society
 
 Volume: 未定(In press) Issue: 9 Pages: 5487-5500
- DOI
 10.1111/jace.19156
- Peer Reviewed / Open Access
- Data Source
 KAKENHI-PROJECT-20K05355
[Journal Article] X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias2023
- Author(s)
  Yao Yongzhao、Wakimoto Daiki、Miyamoto Hironobu、Sasaki Kohei、Kuramata Akito、Hirano Keiichi、Sugawara Yoshihiro、Ishikawa Yukari
- Journal Title
  
  Scripta Materialia
  
  Volume: 226 Pages: 115216-115216
- DOI
  10.1016/j.scriptamat.2022.115216
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission2022
- Author(s)
 Yao Yongzhao、Tsusaka Yoshiyuki、Sasaki Kohei、Kuramata Akito、Sugawara Yoshihiro、Ishikawa Yukari
- Journal Title
 
 Applied Physics Letters
 
 Volume: 121 Issue: 1 Pages: 012105-012105
- DOI
 10.1063/5.0098942
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-20K05355
[Journal Article] Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN2022
- Author(s)
  Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Takeda Hidetoshi、Aida Hideo、Tadatomo Kazuyuki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 22 Pages: 225303-225303
- DOI
  10.1063/5.0084495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron X-ray topography2022
- Author(s)
  Yao Yongzhao、Hirano Keiichi、Sugawara Yoshihiro、Sasaki Kohei、Kuramata Akito、Ishikawa Yukari
- Journal Title
  
  APL Materials
  
  Volume: 10 Issue: 5
- DOI
  10.1063/5.0088701
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations2022
- Author(s)
  Yao Yongzhao、Sugawara Yoshihiro、Sato Koji、Yokoe Daisaku、Sasaki Kohei、Kuramata Akito、Ishikawa Yukari
- Journal Title
  
  Journal of Alloys and Compounds
  
  Volume: 910 Pages: 164788-164788
- DOI
  10.1016/j.jallcom.2022.164788
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography2022
- Author(s)
 Yao Yongzhao、Hirano Keiichi、Sugawara Yoshihiro、Ishikawa Yukari
- Journal Title
 
 Semiconductor Science and Technology
 
 Volume: 37 Issue: 11 Pages: 115009-115009
- DOI
 10.1088/1361-6641/ac974b
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-20K05355
[Journal Article] Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer2022
- Author(s)
  Yao Yongzhao、Sato Koji、Sugawara Yoshihiro、Okada Narihito、Tadatomo Kazuyuki、Sasaki Kohei、Kuramata Akito、Ishikawa Yukari
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 583 Pages: 126558-126558
- DOI
  10.1016/j.jcrysgro.2022.126558
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN2022
- Author(s)
  Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Takeda Hidetoshi、Aida Hideo、Tadatomo Kazuyuki
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 55 Issue: 48 Pages: 485304-485304
- DOI
  10.1088/1361-6463/ac96fd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera2021
- Author(s)
  Yao Yongzhao、Sugawara Yoshihiro、Ishikawa Yukari、Hirano Keiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 1 Pages: 010908-010908
- DOI
  10.35848/1347-4065/abd2dd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth2021
- Author(s)
  Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Noguchi Naoto、Takeda Yukihisa、Yamada Hisashi、Shimizu Mitsuaki、Tadatomo Kazuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 11 Pages: 115501-115501
- DOI
  10.35848/1347-4065/ac2ae5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction2021
- Author(s)
  Yao Yongzhao、Sugawara Yoshihiro、Yokoe Daisaku、Hirano Keiichi、Okada Narihito、Tadatomo Kazuyuki、Sasaki Kohei、Kuramata Akito、Ishikawa Yukari
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 12 Pages: 128004-128004
- DOI
  10.35848/1347-4065/ac3a20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Visualization of the curving of crystal planes in β-Ga2O3 by X-ray topography2021
- Author(s)
  Yao Yongzhao、Hirano Keiichi、Takahashi Yumiko、Sugawara Yoshihiro、Sasaki Kohei、Kuramata Akito、Ishikawa Yukari
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 576 Pages: 126376-126376
- DOI
  10.1016/j.jcrysgro.2021.126376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs2020
- Author(s)
  Yao Yongzhao、Ishikawa Yukari、Sugawara Yoshihiro
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 548 Pages: 125825-125825
- DOI
  10.1016/j.jcrysgro.2020.125825
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy2020
- Author(s)
  Yongzhao Yao, Yoshihiro Sugawara and Yukari Ishikawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 045502-045502
- DOI
  10.35848/1347-4065/ab7dda
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05049
[Journal Article] Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy2020
- Author(s)
  Ishikawa Yukari、Sugawara Yoshihiro、Sato Koji、Yao Yongzhao、Okada Narihito、Tadatomo Kazuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 10 Pages: 100907-100907
- DOI
  10.35848/1347-4065/abbb23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy2020
- Author(s)
  Yao Yongzhao、Sugawara Yoshihiro、Yokoe Daisaku、Sato Koji、Ishikawa Yukari、Okada Narihito、Tadatomo Kazuyuki、Sudo Masaki、Kato Masashi、Miyoshi Makoto、Egawa Takashi
- Journal Title
  
  CrystEngComm
  
  Volume: 22 Issue: 48 Pages: 8299-8312
- DOI
  10.1039/d0ce01344g
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] Screw dislocations on $\left\{1\bar{2}12\right\}$ pyramidal planes induced by Vickers indentation in HVPE GaN2020
- Author(s)
  Ishikawa Yukari、Sugawara Yoshihiro、Yokoe Daisaku、Yao Yongzhao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 9 Pages: 091005-091005
- DOI
  10.35848/1347-4065/abb00c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05176
[Journal Article] Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography2020
- Author(s)
  Yao Yongzhao、Ishikawa Yukari、Sugawara Yoshihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 12 Pages: 125501-125501
- DOI
  10.35848/1347-4065/abc1aa
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05355
[Journal Article] X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method2019
- Author(s)
  Yao, Yongzhao, Sugawara, Yoshihiro, Yukari, Ishikawa,Takahashi, Yumiko, Hirano, Keiichi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Issue: 20 Pages: 205110-205110
- DOI
  10.1063/5.0007229
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05049, KAKENHI-PROJECT-20K05355
[Journal Article] Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation2018
- Author(s)
  Masaki Sudo, Yukari Ishikawa, Yongzhao Yao, Yoshihiro Sugawara, and Masashi Kato
- Journal Title
  
  Materials Science Forum
  
  Volume: 924 Pages: 151-154
- DOI
  10.4028/www.scientific.net/msf.924.151
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05049
[Journal Article] Expansion of a single Shockley stacking fault in a 4H-SiC (11-20) epitaxial layer caused by electron beam irradiation2018
- Author(s)
  Yukari Ishikawa, Masaki Sudo, Yongzhao Yao, Yoshihiro Sugawara, and Masashi Kato
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 22 Pages: 1-6
- DOI
  10.1063/1.5026448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05049
[Journal Article] Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution2016
- Author(s)
  Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 63 Pages: 86-90
- DOI
  10.1016/j.diamond.2015.10.003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420071
[Journal Article] Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive,wire sawing with fixed abrasive, and electric discharge machining2014
- Author(s)
  Yukari Ishikawa, Yong-Zhao Yao, Yoshihiro Sugawara, Koji Sato, Yoshihiro Okamoto,Noritaka Hayashi, Benjamin Dierre, Kentaro Watanabe, and Takashi Sekiguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 7 Pages: 1-11
- DOI
  10.7567/jjap.53.071301
- NAID
  210000144159
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420071
[Patent] 半導体基板の結晶面の形状評価方法および形状評価装置、ならびに、半導体基板の結晶面の形状評価を行うためのコンピュータプログラム2021
- Inventor(s)
  姚永昭、石川由加里、菅原義弘
- Industrial Property Rights Holder
  姚永昭、石川由加里、菅原義弘
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-148810
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] Operando and ex-situ XRT observation of dislocations in β-Ga2O3 SBDs and their glide and multiplication under device operation2022
- Author(s)
  Y. Yao, D. Wakimoto, H. Miyamoto, K. Sasaki, A. Kuramata, K. Hirano, Y. Sugawara, Y. Ishikawa
- Organizer
  The International Workshop on Gallium Oxide and Related Materials (IWGO)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] X線回折によるパワー半導体単結晶基板の結晶面湾曲の3D可視化2022
- Author(s)
  姚永昭
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] Structural defects in β-Ga2O3 analyzed by X-ray topography and complementary techniques2022
- Author(s)
  Y. Yao, Y. Sugawara, K. Sato, D. Yokoe, Y. Ishikawa, D. Wakimoto, H. Miyamoto, K. Sasaki, A. Kuramata
- Organizer
  The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] Dislocation analysis for large-area thick EFG β-Ga2O3 substrates using Borrmann effect synchrotron X-ray topography2022
- Author(s)
  Y. Yao, Y. Tsusaka, K. Hirano, K. Sasaki, A. Kuramata, Y. Sugawara, Y. Ishikawa
- Organizer
  The International Workshop on Gallium Oxide and Related Materials (IWGO)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] ワイドバンドギャップ半導体結晶の転位検出と解析2022
- Author(s)
  石川由加里、姚永昭、菅原義弘、佐藤功二、横江大作
- Organizer
  日本金属学会2022年秋期（第171回）講演大会
- Invited
- Data Source
  KAKENHI-PROJECT-20K05176
[Presentation] Linear relationship between dislocation pattern size induced by Vickers indentation and imprint width on (0001) GaN2022
- Author(s)
  Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Syusui Ogawa, Daisaku yokoe, Hidetoshi Takeda, Hideo Aida, Kazuyuki Tadatomo
- Organizer
  19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05176
[Presentation] （0001）GaNウエハ上のsクラッチ幅と転位パタンサイズの線形増加2022
- Author(s)
  石川由加里、菅原義弘、姚永昭、武田秀俊、會田英雄、只友一行
- Organizer
  応用物理学会先進パワー半導体分科会「第9回講演会」
- Data Source
  KAKENHI-PROJECT-20K05176
[Presentation] Evaluation of β-Ga2O3 substrates using X-ray diffraction, synchrotron X-ray topography, and etch pit method2021
- Author(s)
  姚永昭
- Organizer
  結晶加工と評価技術第145委員会第173回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20K05355
[Presentation] HVPE-GaN（0001）基板にVickers圧入で生じた転位構造2021
- Author(s)
  石川由加里，横江大作，菅原義弘，姚永昭
- Organizer
  応用物理学会　2021年第82回秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05176
[Presentation] GaN結晶のビッカース圧痕周囲の転位の広がりと構造2020
- Author(s)
  石川由加里，横江大作，菅原義弘，姚永昭
- Organizer
  日本機械学会
- Data Source
  KAKENHI-PROJECT-20K05176
[Presentation] HVPE-GaN基板上に形成したビッカース圧痕周囲の転位構造2020
- Author(s)
  石川由加里、菅原義弘、横江大作、姚永昭
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] Synchrotron X-Ray Topography Observation and Classification of Dislocations in β-Ga2O3 single crystal substrates grown by edge-defined film-fed growth2019
- Author(s)
  Yao, Yongzhao, Sugawara, Yoshihiro, Yukari, Ishikawa,Takahashi, Yumiko, Hirano, Keiichi
- Organizer
  Yao, Yongzhao, Sugawara, Yoshihiro, Yukari, Ishikawa,Takahashi, Yumiko, Hirano, Keiichi
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] Observation and classification of defects in gallium oxide2019
- Author(s)
  Yao, Yongzhao
- Organizer
  International Workshop on Gallium Oxide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] 4H-SiC, GaNの基底面転位のm面電子線照射による挙動2019
- Author(s)
  石川由加里，須藤正喜，菅原義弘，姚永昭，加藤正史、三好実人、江川孝志
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] 4H-SiC A面電子線励起による基底面転位の拡張挙動2017
- Author(s)
  石川由加里，須藤正喜，姚永昭，菅原義弘，加藤正史
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] Characterization of EFG-grown β-Ga2O3 single crystal by using Synchrotron X-ray topography, X-ray diffraction and Raman2017
- Author(s)
  姚永昭
- Organizer
  2nd International Workshop on Gallium Oxide and Related Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17516
[Presentation] 放射光X線トポグラフィ、X線回折およびラマンを用いたEFG法β-酸化ガリウム単結晶の評価2017
- Author(s)
  姚永昭
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16K17516
[Presentation] Expansion of basal plane dislocation in 4H-SiC epitaxial layer on A-plane by electron beam irradiation2017
- Author(s)
  Masaki Sudo, Yukari Ishikawa, Yong-Zhao Yao, Yoshihiro Sugawara,　and Masashi Kato
- Organizer
  2017 International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] 4H-SiCのA面における基底面転位の電子線照射による拡張挙動2017
- Author(s)
  石川由加里，須藤正喜，姚永昭，菅原義弘，加藤正史
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05049
[Presentation] Fast removal of surface damage layer from single crystal diamond by using chemical etching in molten KCl + KOH solution2015
- Author(s)
  Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, Y.Mokuno
- Organizer
  The 9th International Conference on New Diamond and Nano Carbons
- Place of Presentation
  静岡グランシップ
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420071
[Presentation] 遊離砥粒ワイヤーソーと放電加工で切断表面に導入された欠陥の比較
- Author(s)
  石川由加里，姚永昭，佐藤功二，菅原義弘，岡本好弘，林紀孝
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-26420071

1. ISHIKAWA Yukari (60416196)

# of Collaborated Projects: 8 results

# of Collaborated Products: 40 results
2. 菅原義弘 (70466291)

# of Collaborated Projects: 8 results

# of Collaborated Products: 9 results
3. 岡田成仁 (70510684)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 山田洋明 (00455099)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. TAKAHASHI Yumiko

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. HIRANO Keiichi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Yao Yongzhao 姚 永昭

YAO YONGZHAO 姚 永昭

Research Projects

Research Products

Co-Researchers

Proposal of new nitride semiconductor electronic device structure using AlN substrate and its crystal growth

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ワイドバンドギャップ半導体結晶の加工変質層厚に非破壊評価法の開発

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実動作中のワイドギャップ半導体パワーデバイスにおける転位の動的な挙動の観察Principal Investigator

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パワーデバイス劣化機構の解明に向けた格子欠陥のオペランド観察技術の開発Principal Investigator

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Investigation of defect structure and the mechanism of defect introduction in wide bandgap semiconductor crystals by processing

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Development of large-area dislocation detection and classification techniques for next-generation power semiconductor beta-Ga2O3Principal Investigator

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Effects of defects and surface structure on oxide film on non-polar 4H-SiC plane

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Development of crystal defect revelation technique for next-generation power semiconductor material Ga2O3Principal Investigator

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Investigation of formation mechanism of crystal defects induced by machining at the surface of single crystal SiC

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[Journal Article] Lattice misorientation at domain boundaries in β‐Ga<sub>2</sub>O<sub>3</sub> single‐crystal substrates observed via synchrotron radiation X‐ray diffraction imaging and X‐ray reticulography2023

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DOI

Data Source

[Journal Article] X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias2023

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DOI

Data Source

[Journal Article] Large-area total-thickness imaging and Burgers vector analysis of dislocations in <b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> using bright-field x-ray topography based on anomalous transmission2022

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[Journal Article] Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN2022

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[Journal Article] Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron X-ray topography2022

Yao Yongzhao 姚永昭

YAO YONGZHAO 姚永昭