Kangawa Yoshihiro 寒川義裕

… Alternative Names

KANGAWA Yoshihiro 寒川義裕

Less

Researcher Number	90327320
Other IDs	https://orcid.org/0000-0002-4982-8883
External Links
Affiliation (Current)	2024: 九州大学, 応用力学研究所, 教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 九州大学, 応用力学研究所, 教授 2017 – 2020: 九州大学, 応用力学研究所, 教授 2007 – 2016: KYUSHU UNIVERSITY, Research Institute for Applied Mechanics, Associate Professor 2004 – 2006: Kyushu University, Research Institute for Applied Machanics, Associate Professor, 応用力学研究所, 助教授 2003: 東京農工大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Inorganic materials/Physical properties / Medium-sized Section 30:Applied physics and engineering and related fields Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 窒化アルミニウム / 溶液成長 / 反応経路探索 / 表面プロセス / 化学気相成長 / 結晶工学 / 結晶成長 / テンプレート基板 / 窒化物半導体 / パワーデバイス用材料 / その場観察 … More Except Principal Investigator … More AlN / AlGaN / 結晶成長 / 窒化物半導体 / エピタキシャル成長 / HVPE / ナノ構造 / アニール / 非極性面 / AlNテンプレート / 深紫外LED / 超格子 / 転位 / 偏析 / 窒化物混晶半導体 / 特異構造場 / 結晶工学 / 計算物理 / 量子ドット / 自然超格子 / 組成変調 / 極性反転 / ボンドエンジニアリング / 特異構造 / 計算科学 / Interstitial atom site / Crystal polarity / ALCHEMI / Energy gap / Oxygen atom / Transmission electron microscopy / Molecular beam enitaxv / Indium nitridp / 酸化インジウム / 占有確率 / アルケミ法 / 電子顕微鏡 / 収束電子回折 / 格子間原子位置 / 結晶極性 / アルケミ / エネルギーギャップ / 酸素 / 透過型電子顕微鏡 / 分子線エピタキシャル成長 / 窒化インジウム / Thermodynamic Analysis / AlCl / AlCl_3 / Free-standing substrate / Epitaxial Growth / 基板結晶 / ナノ結晶場制御 / 原料分子制御 / 厚膜エピタキシャル成長 / 熱力学解析 / 一塩化アルミニューム / 三塩化アルミニューム / 自立基板結晶 / 表面制御 / 電子状態 / エピタキシー / バンドギャップ / ナノリボン / グラフェン / 界面反応エピタキシャル法 / ヘテロエピタキシャル成長 / III族窒化物 / 窒化シリコン / AM-MEE成長法 / AlNダブルバッファー層 / 原子フラックス測定 / 半導体物性 / 電子・電気材料 / エピタキシャル / PA-MBE / 3次元解析 / シリコン / SiC / Si / 電磁場 Less

半導体化学気相成長の科学Principal Investigator
- Principal Investigator
  
  寒川義裕
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Kyushu University
Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDs
- Principal Investigator
  
  三宅秀人
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
A new fabrication technique of AlN/sapphire templatePrincipal Investigator
- Principal Investigator
  
  Kangawa Yoshihiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kyushu University
Computational materials design for hetero-bond manipulation
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Mie University
Development of AlN growth method using AlN powderPrincipal Investigator
- Principal Investigator
  
  Kangawa Yoshihiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kyushu University
Fabrication of graphene nanostructures and correlation to electronic properties
- Principal Investigator
  
  TANAKA Satoru
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kyushu University
Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method
- Principal Investigator
  
  OHACHI Tadashi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Doshisha University
Development of new method of crystal growth using dynamic electromagnetic force
- Principal Investigator
  
  KAKIMOTO Koichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Nano-analysis of occupation sites of impurity atoms and relation with functional characteristics
- Principal Investigator
  
  KUWANO Noriyuki
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  National University Corporation Tokyo University of Agriculture and Technology

[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Yoshihiro Kangawa Takashi Nakayama, Kenji Shiraishi
- Total Pages
  223
- Publisher
  Springer
- ISBN
  9783319766409
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE2021
- Author(s)
  Kangawa Yoshihiro、Kusaba Akira、Kempisty Pawel、Shiraishi Kenji、Nitta Shugo、Amano Hiroshi
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 21 Issue: 3 Pages: 1878-1890
- DOI
  10.1021/acs.cgd.0c01564
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach2021
- Author(s)
  Yosho Daichi、Matsuo Yuriko、Kusaba Akira、Kempisty Pawel、Kangawa Yoshihiro、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  CrystEngComm
  
  Volume: 23 Issue: 6 Pages: 1423-1428
- DOI
  10.1039/d0ce01683g
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K15181, KAKENHI-PLANNED-16H06417, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-19H02614
[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020
- Author(s)
  Kawamura Takahiro、Fujita Yuma、Hamaji Yuya、Akiyama Toru、Kangawa Yoshihiro、Gorczyca Izabela、Suski Tadeusz、Wierzbowska Maigorzata, Krukowski Stanisiaw
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900530-1900530
- DOI
  10.1002/pssb.201900530
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Oxygen Incorporation Kinetics in Vicinal m (10-10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy2020
- Author(s)
  Yosho Daichi、Shintaku Fumiya、Inatomi Yuya、Kangawa Yoshihiro、Iwata Jun-Ichi、Oshiyama Atsushi、Shiraishi Kenji、Tanaka Atsushi、Amano Hiroshi
- Journal Title
  
  physica status solidi (RRL) Rapid Research Letters
  
  Volume: 2020 Issue: 6 Pages: 2000142-2000142
- DOI
  10.1002/pssr.202000142
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18H03873
[Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020
- Author(s)
  Kawamura Takahiro、Akiyama Toru、Kitamoto Akira、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 549 Pages: 125868-125868
- DOI
  10.1016/j.jcrysgro.2020.125868
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957
[Journal Article] Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE2020
- Author(s)
  Shintaku Fumiya、Yosho Daichi、Kangawa Yoshihiro、Iwata Jun-Ichi、Oshiyama Atsushi、Shiraishi Kenji、Tanaka Atsushi、Amano Hiroshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 5 Pages: 055507-055507
- DOI
  10.35848/1882-0786/ab8723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873, KAKENHI-PLANNED-16H06418
[Journal Article] Modeling carbon coverage on polar GaN surfaces during MOVPE2020
- Author(s)
  Yosho Daichi、Inatomi Yuya、Kangawa Yoshihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 048002-048002
- DOI
  10.35848/1347-4065/ab80e2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE2020
- Author(s)
  Inatomi Y.、Kangawa Y.
- Journal Title
  
  Applied Surface Science
  
  Volume: 502 Pages: 144205-144205
- DOI
  10.1016/j.apsusc.2019.144205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19J11998, KAKENHI-PLANNED-16H06418
[Journal Article] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2020
- Author(s)
  Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Kangawa Yoshihiro
- Journal Title
  
  Scientific Reports
  
  Volume: 10 Issue: 1 Pages: 185701-11
- DOI
  10.1038/s41598-020-75380-3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PLANNED-16H06427
[Journal Article] Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy2019
- Author(s)
  Inatomi Y.、Kangawa Y.、Pimpinelli A.、Einstein T. L.
- Journal Title
  
  Physical Review Materials
  
  Volume: 3 Issue: 1
- DOI
  10.1103/physrevmaterials.3.013401
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000-1), and (1-100) surfaces2019
- Author(s)
  Chokawa Kenta、Makino Emi、Hosokawa Norikazu、Onda Shoichi、Kangawa Yoshihiro、Shiraishi Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 11 Pages: 115501-115501
- DOI
  10.7567/1347-4065/ab4c21
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films2019
- Author(s)
  Kusaba Akira、Li Guanchen、Kempisty Pawel、von Spakovsky Michael、Kangawa Yoshihiro
- Journal Title
  
  Materials
  
  Volume: 12 Issue: 6 Pages: 972-972
- DOI
  10.3390/ma12060972
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations2019
- Author(s)
  Kempisty Pawel、Kangawa Yoshihiro
- Journal Title
  
  Physical Review B
  
  Volume: 100 Issue: 8
- DOI
  10.1103/physrevb.100.085304
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018
- Author(s)
  Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 115504-115504
- DOI
  10.7567/jjap.57.115504
- NAID
  210000149765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04957, KAKENHI-PLANNED-16H06418, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under the oxide vapor phase epitaxy growth conditions2017
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 印刷中 Issue: 8 Pages: 1600706-1600706
- DOI
  10.1002/pssb.201600706
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15K13351, KAKENHI-PROJECT-15K17459, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010
[Journal Article] DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy2017
- Author(s)
  Kempisty Pawel、Kangawa Yoshihiro、Kusaba Akira、Shiraishi Kenji、Krukowski Stanislaw、Bockowski Michal、Kakimoto Koichi、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 14 Pages: 141602-141602
- DOI
  10.1063/1.4991608
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 3 Pages: 038002-038002
- DOI
  10.7567/jjap.56.038002
- NAID
  210000147493
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-26246018
[Journal Article] Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy2017
- Author(s)
  Kusaba Akira、Kangawa Yoshihiro、Kempisty Pawel、Valencia Hubert、Shiraishi Kenji、Kumagai Yoshinao、Kakimoto Koichi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 7 Pages: 070304-070304
- DOI
  10.7567/jjap.56.070304
- NAID
  210000147978
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics2017
- Author(s)
  Kusaba Akira、Li Guanchen、von Spakovsky Michael、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Materials
  
  Volume: 10 Issue: 8 Pages: 948-948
- DOI
  10.3390/ma10080948
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface2017
- Author(s)
  Kempisty Pawel、Strak Pawel、Sakowski Konrad、Kangawa Yoshihiro、Krukowski Stanislaw
- Journal Title
  
  Physical Chemistry Chemical Physics
  
  Volume: 19 Issue: 43 Pages: 29676-29684
- DOI
  10.1039/c7cp05214f
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth2017
- Author(s)
  Inatomi Yuya、Kangawa Yoshihiro、Ito Tomonori、Suski Tadeusz、Kumagai Yoshinao、Kakimoto Koichi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 7 Pages: 078003-078003
- DOI
  10.7567/jjap.56.078003
- NAID
  210000148014
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy2016
- Author(s)
  A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 12 Pages: 125601-125601
- DOI
  10.7567/apex.9.125601
- NAID
  210000138129
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] AlN 溶液成長における固-液界面その場観察装置の開発2015
- Author(s)
  寒川義裕, 三宅秀人, Michal Bockowski, 柿本浩一
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 42 Pages: 232-237
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN2015
- Author(s)
  Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 8 Issue: 6 Pages: 065601-065601
- DOI
  10.7567/apex.8.065601
- NAID
  210000137566
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Structural and optical properties of AlN grown by solid source solution growth method2015
- Author(s)
  Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8 Pages: 085501-085501
- DOI
  10.7567/jjap.54.085501
- NAID
  210000145511
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Possibility of AlN growth using Li-Al-N solvent2010
- Author(s)
  Y.Kangawa, K.Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2569-2573
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Possibility of AlN growth using Li-Al-N solvent2010
- Author(s)
  Y.Kangawa, K.Kakimoto
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 2569-2573
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Possibility of AlN growth using Li- Al- N solvent2010
- Author(s)
  Y.Kangawa
- Journal Title
  
  J.Crystal Growth (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Numerical Analysis of mc-Si Crystal Growth2010
- Author(s)
  Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X.J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa
- Journal Title
  
  Solid State Phenomena 156-158,4
  
  Pages: 193-198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Numerical investigation of crystal growth process of bulk Si and nitrides-a review2007
- Author(s)
  K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X.J. Chen, Y. Kangawa
- Journal Title
  
  Cryst. Res. Technol. 42,12
  
  Pages: 1185-1189
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Thermodynamic analysis of AlGaN HYPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth 5月(in press)
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2004
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources.2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction.2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large Indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content.2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi(a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy.2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate.2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kkikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] A quantum Approach on a stability of GaAs surface structure.2003
- Author(s)
  Y.Kangawa, T.Itho, K.Shiraishi, T.Ohihachi, A.Koukitu
- Journal Title
  
  Surface Science(in Japanese) 24
  
  Pages: 642-647
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth.2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  Physica status solidi(c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  physica status solidi (c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE.2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] GaAs表面構造の安定性に対する量子論的アプローチ2003
- Author(s)
  寒川義裕, 伊藤智徳, 白石賢二, 大鉢忠, 纐纈明伯
- Journal Title
  
  表面科学 24
  
  Pages: 642-647
- NAID
  130004486109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Influence constraint from substrate on relationship between input mole ration and solid composition of InGaN during MBE and MOVPE.2003
- Author(s)
  Y.Kangawa, T.Itho, Y.Kumagai, A.Koukitu
- Journal Title
  
  J.Japanease Association for Crystal Growth(in Japanese) 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] InGaN気相成長における気相-固相関係に対する基板拘束の影響2003
- Author(s)
  寒川義裕, 伊藤智徳, 熊谷義直, 纐纈明伯
- Journal Title
  
  日本結晶成長学会誌 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Presentation] Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors2021
- Author(s)
  Pawel Kempisty, Konrad Sakowski, Akira Kusaba, and Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Modeling semiconductor epitaxy for next generation power device application2021
- Author(s)
  Yoshihiro Kangawa
- Organizer
  IMI Workshop on Fiber Topology Meets Applications
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio atomistic thermodynamics of pseudo-hot surfaces in the context of GaN growth and doping2021
- Author(s)
  Pawel Kempisty, Stanislaw Krukowski, and Yoshihiro Kangawa
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Magorzata Wierzbowska, and Stanisaw Krukowski
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach2021
- Author(s)
  Yoshihiro Kangawa
- Organizer
  SPIE Photonic West OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Bandgaps of InN/AlN superlattices and AlInN alloys: Influence of composition and strain2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Malgorzata　Wierzbowska,　and　Stanislaw Krukowski
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface coverage of impurities during GaN and AlN MOVPE2021
- Author(s)
  Daichi Yosho, Yoshihiro Kangawa
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of Lattice Distortion on the Effective Bandgaps of Polar InN/AlN Superlattices2021
- Author(s)
  Kouhei Basaki, Akito Korei, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] More quantitative prediction of III-nitride growth: theoretical and data-driven approaches2021
- Author(s)
  Akira Kusaba, Yoshihiro Kangawa
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication2020
- Author(s)
  A. Kusaba, Y. Kangawa, K. Norimatsu, and H. Miyake
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A theoretical model for carbon coverage on GaN polar surfaces during MOVPE2020
- Author(s)
  D. Yosho, Y. Inatomi, and Y. Kangawa
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 機械学習によるスパッタAlN膜の高温アニール最適プロセス探索2020
- Author(s)
  草場彰, 寒川義裕, 則松研二, 三宅秀人
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関：第一原理計算に基づく理論解析2020
- Author(s)
  中野崇志、原嶋庸介、大河内勇斗、長川健太、洗平昌晃、白石賢二、押山淳、草場彰、寒川義裕、田中敦之、本田善央、天野浩
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催「電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－」（第25回）
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 微傾斜m-GaN MOVPEにおける酸素混入機構：量子論に立脚したBCFモデル2020
- Author(s)
  用正大地, 新宅史哉, 稲富悠也, 寒川義裕, 岩田潤一, 押山淳, 白石賢二, 田中敦之, 天野浩
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 不純物混入と深紫外デバイス特性の相関2020
- Author(s)
  寒川義裕
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体プロセス・インフォマティクス：不純物混入の抑制2020
- Author(s)
  寒川義裕
- Organizer
  第49回薄膜・表面物理度基礎講座
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体成長プロセスの理論解析：不純物混入機構2020
- Author(s)
  寒川義裕
- Organizer
  日本物理学会2020年秋季大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the band gap of InN/AlN SLs and lattice distortion2019
- Author(s)
  Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Step bunching stability; instability diagram for nitride semiconductor growth2019
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体成長モデリングの進展：不純物混入機構の考察2019
- Author(s)
  寒川義裕
- Organizer
  第11回九大2D物質研究会「2D物質の形成と構造・物性評価」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A new theoretical approach to nitride crystal growth: impurity incorporation mechanism2019
- Author(s)
  Yoshihiro Kangawa, Pawel, Kempisty, and Kenji Shiraishi
- Organizer
  13th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Electronic structure analysis of the core structures of threading dislocations in GaN2019
- Author(s)
  Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano
- Organizer
  Compound Semiconductor Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] らせん転位およびMg不純物を含むGaNの電子構造解析2019
- Author(s)
  中野崇志、原嶋庸介、長川健太、洗平昌晃、白石賢二、押山淳、草場彰、寒川義裕、田中敦之、本田善央、天野浩
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Band gaps in short period superlattices consisted of different compositional AlInN alloys2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Electronic Properties of GaN Nanopipe Threading Dislocation with m-plane Surface2019
- Author(s)
  Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamics of vapor-surface equilibria in ab initio modelling of semiconductor growth processes2019
- Author(s)
  Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanisaw Krukowski
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造におけるバンドギャップに対する格子不整合の影響2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 未来材料開拓に向けた相界面制御2019
- Author(s)
  寒川義裕
- Organizer
  第48回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Adatom Density on Polar GaN Surfaces During MOVPE2019
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study on step bunching instability during nitride semiconductor growth2019
- Author(s)
  Yuya Inatomi, and Yoshihiro Kangawa
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles calculation of absolute surface energies of GaN during oxide vapor phase epitaxy growth2019
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体におけるステップバンチング発生機構の解明2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 酸素不純物を考慮したGaN表面エネルギーの面方位依存性2019
- Author(s)
  河村貴宏，北本啓，今西正幸，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] m面GaN-MOVPEにおける酸素混入量の基板傾斜方向依存性の理論解析2019
- Author(s)
  新宅史哉、寒川義裕、岩田潤一、押山淳、白石賢二、田中敦之、天野浩
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE成長中の極性面AlN表面における吸着原子の安定性解析2019
- Author(s)
  稲富悠也, 寒川義裕, 岩谷素顕, 三宅秀人
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo simulation of GaN MOVPE process: carbon incorporation mechanism2019
- Author(s)
  S. Yamamoto, Y. Okawachi, P. Kempisty, Y. Kangawa, K. Shiraishi
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE2019
- Author(s)
  Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, and Hiroshi Amano
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculation of Band Gaps of Al1-xInxN Alloys and Short Period Al1-xInxN/Al1-yInyN Superlattices2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Magorzata　Wierzbowska,　and　Stanisaw Krukowski
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE条件下におけるⅢ族窒化物半導体無極性面の熱力学解析2019
- Author(s)
  清水紀志, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体におけるステップバンチング発生機構の解明2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] First-principles phonon calculations as a method of improving the atomistic thermodynamics of III-nitrides surfaces2019
- Author(s)
  Pawel Kempisty, Yoshihiro Kangawa
- Organizer
  5th Workshop on ab initio phonon calculations
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Study of the origins of carbon impurities on GaN MOVPE from a gas phase reaction perspective2019
- Author(s)
  Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 吸着原子の拡散距離が表面モフォロジーに与える影響2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第42回結晶成長討論会
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] 吸着原子の拡散距離が表面モフォロジーに与える影響2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第42回結晶成長討論会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach to impurity incorporation mechanism in GaN MOVPE2019
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi
- Organizer
  The 38th Electronic Materials Symposium (EMS-38)
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 未来材料開拓に向けた相界面制御2019
- Author(s)
  寒川義裕
- Organizer
  第48回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019
- Author(s)
  河村貴宏，竹田浩基，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2019 年第66 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach of oxygen incorporation into GaN grown on vicinal GaN(10-10)2019
- Author(s)
  Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
- Organizer
  1st International Workshop on AlGaN based UV-Laserdiodes
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造のバンドギャップと格子歪みとの関係2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Unintentional doping in GaN MOVPE: A new theoretical model2019
- Author(s)
  Yoshihiro Kangawa
- Organizer
  1st International Workshop on AlGaN based UV-Laserdiodes
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study: Impurity incorporation in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer2018
- Author(s)
  Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio-based approach to crystal growth of nitride semiconductors: alloy composition and impurity concentration2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  4th International Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface adatom density and lifetime on polar GaN surfaces during MBE and MOVPE: a theoretical approach2018
- Author(s)
  Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] III族窒化物半導体超格子におけるバンドギャップの組成依存性2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of surface reconstruction on the impurity incorporation in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa
- Organizer
  Mathematical Aspects of Surface and Interface Dynamics 16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Modeling and process design of III-nitride MOVPE2018
- Author(s)
  Y. Kangawa, P. Kempisty, K. Shiraishi
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN表面構造およびO不純物の脱離エネルギーの解析2018
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2018年春季第65回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theory of GaN MOVPE process considering surface reconstruction2018
- Author(s)
  Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto
- Organizer
  SPIE photonic west OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices2018
- Author(s)
  Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, Stanislaw Krukowski
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Contribution of first principles phonon calculations to thermodynamics analysis of GaN surfaces2018
- Author(s)
  Pawel Kempisty, Yoshihiro Kangawa, Stanislaw Krukowski
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio based-approach to impurity incorporation mechanism in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018
- Author(s)
  Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices2018
- Author(s)
  Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition2018
- Author(s)
  Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, A. Kusaba, Y. Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018
- Author(s)
  Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, S. F. Chichibu
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface reconstruction and impurity incorporation in GaN MOVPE: Ab initio-based modeling2018
- Author(s)
  Y. Kangawa, P. Kempisty, S. Krukowski, K. Shiraishi, K. Kakimoto
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性2018
- Author(s)
  草場彰，李冠辰，Pawel Kempisty，Michael R. von Spakovsky，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN超格子構造におけるバンドギャップの組成依存性2018
- Author(s)
  藤田裕真，河村貴宏，鈴木泰之，秋山亨，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000－1): the growth orientation dependence of the C impurity concentration2018
- Author(s)
  Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System2018
- Author(s)
  A. Kusaba, G. Li, M. R. von Spakovsky, P. Kempisty, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A new theoretical model for adatom density and lifetime on polar GaN surfaces during MBE and MOVPE2018
- Author(s)
  Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic improvement of III-nitrides surface thermodynamics by including first principles phonon calculations2018
- Author(s)
  Pawel Kempisty, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN MOVPEにおける炭素取込み機構の考察2018
- Author(s)
  寒川義裕
- Organizer
  第47 回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A theoretical model for carbon incorporation during step-flow growth of GaN by MOVPE2018
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 電子材料開発における計算科学の進展2018
- Author(s)
  寒川義裕
- Organizer
  佐賀大学シンクロトロン光応用研究センター講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体の有機金属気相エピタキシー成長における熱力学解析：半極性面の検討2018
- Author(s)
  瀬田雄基，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳，草場彰，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo simulation of carbon incorporation in GaN MOVPE2018
- Author(s)
  S. Yamamoto, Y. Inatomi, A. Kusaba, P. Kempisty, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN/InN超格子のバンドギャップ解析2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics2017
- Author(s)
  A. Kusaba, G. Li, M. R. von Spakovsky, Y. Kangawa, K. Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State2017
- Author(s)
  A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] NH3化学吸着の非平衡状態発展：最急エントロピー勾配量子熱力学モデリング2017
- Author(s)
  草場彰, Guanchen Li, Michael R. von Spakovsky, 寒川義裕, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of lattice constraint on In incorporation in InGaN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto
- Organizer
  The 36th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 分子動力学法によるAlNバッファ層のひずみ緩和シミュレーション2017
- Author(s)
  森本由成，河村貴宏，鈴木泰之，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InGaN薄膜成長における格子不整合とIn組成の相関2017
- Author(s)
  稲富悠也、寒川義裕、伊藤智徳、柿本浩一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, S. F. Chichibu, K. Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of InGaN MOVPE: influence of lattice constraint2017
- Author(s)
  Y. Inatomi, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング：付着係数の理論解析2017
- Author(s)
  草場彰, G. Li, M. R. von Spakovsky, 寒川義裕, 柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stability of the carbon and oxygen impurities in the subsurface layer near the polar GaN surface2017
- Author(s)
  P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN非極性表面構造の第一原理計算2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Steepest-entropy-ascent quantum thermodynamic modeling of NH3 chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy conditions2017
- Author(s)
  A. Kusaba, Guanchen Li, Michael R. von Spakovsky, Y. Kangawa, K. Kakimoto
- Organizer
  E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Density Functional Theory study on stability of carbon and oxygen at GaN(0001) and GaN(000-1) surfaces2017
- Author(s)
  P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE法によるGaN成長における極性および非極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN MOVPEにおける結晶成長プロセスの理論解析2017
- Author(s)
  寒川義裕, 芳松克則, 白石賢二, 柿本浩一
- Organizer
  日本学術振興会第162委員会第105回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体結晶成長モデリングの現状と課題2017
- Author(s)
  寒川義裕, 白石賢二, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A kinetic－thermodynamic theory in step－flow growth of compound semiconductor: Application to impurity incorporation in GaN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto
- Organizer
  大阪電気通信大学国際ワークショップ
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN薄膜成長における格子不整合と組成取り込み効率の相関2017
- Author(s)
  稲富悠也, 寒川義裕, 伊藤智徳, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles study of semipolar GaN (10-11) surfaces under oxide vapor phase epitaxy growth conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Molecular dynamics simulation of strain relaxation of AlN buffer layer2017
- Author(s)
  Yusei Morimoto, Takahiro Kawamura, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Surface Phase Diagrams of GaN(0001) and (000-1) under the Oxide Vapor Phase Epitaxy Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction2016
- Author(s)
  A. Kusaba, Y. Kangawa, K. Kakimoto, K. Shiraishi, H. Amano, A. Koukitu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE2016
- Author(s)
  A. Kusaba, Y. Kangawa, M. R. von Spakovsky, K. Shiraishi, K. Kakimoto, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab Initio-Based Approach to Crystal Growth of Nitride Semiconductors: Contribution of Growth Orientation and Surface Reconstruction2016
- Author(s)
  Y. Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN結晶成長シミュレーションの新展開：第一原理計算に基づくアプローチ2016
- Author(s)
  寒川義裕, 白石賢二, 柿本浩一
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] nnovation of AlN solution growth technique2016
- Author(s)
  Y. Kangawa
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors
- Place of Presentation
  新竹（台湾）
- Year and Date
  2016-10-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First Principles Based Simulation for Compound Semiconductor Growth Processes2016
- Author(s)
  Y. Kangawa
- Organizer
  2016 International Conference on Solid State devices and Materials (SSDM 2016) Short Course
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるOVPE成長条件下におけるGaN(000-1)表面構造の解析2016
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stable Structure of GaN(0001) under the OVPE Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Contribution of lattice constraint to indium incorporation during coherent growth of InGaN2016
- Author(s)
  T. Tamura, A. Kusaba, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlN固体ソース溶液成長における固‐液界面形状のその場観察2015
- Author(s)
  草場彰, 住吉央朗, 寒川義裕, 三宅秀人, 柿本浩一
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  仙台
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Development of in-situ observation system for high-temperature liquid/solid interfaces: application to solid-source solution growth of AlN2015
- Author(s)
  Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
- Organizer
  Fifth European Conference on Crystal Growth (ECCG-5)
- Place of Presentation
  Bologna, Italy
- Year and Date
  2015-09-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Development of in situ observation system for liquid/solid interface during solution growth of AlN2015
- Author(s)
  Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2015)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2015-08-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] 電力変換の高効率化に向けた次世代パワーデバイス用AlN結晶の開発2014
- Author(s)
  寒川義裕
- Organizer
  九州大学共進化社会システム創成拠点フォーラム
- Place of Presentation
  市ヶ谷、7A-8
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, K. Kakimoto
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Germany, TU4-3
- Invited
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Dislocation propagation behavior in AlN grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学、18a-M6-1
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland, WeO2-28742
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] AlNバルク成長に向けた2相溶液成長法の提案2011
- Author(s)
  寒川義裕、土岐隆太郎、屋山巴、柿本浩一
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  (東日本大震災のため講演会は中止、アブストラクト発表のみ)
- Year and Date
  2011-03-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AIN バルク成長に向けた2相溶液成長法の提案2011
- Author(s)
  寒川義裕、土岐隆太郎、屋山巴、柿本浩一
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  東日本大震災のため講演会は中止、アブストラクト発表のみ
- Year and Date
  2011-03-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal2011
- Author(s)
  Y. Kangawa,, B.M.Epelbaum, K.Kakimoto
- Organizer
  7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
- Place of Presentation
  Koyasan University, Japan
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal2011
- Author(s)
  Y.Kangawa, B.M.Epelbaum, K.Kakimoto
- Organizer
  7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
- Place of Presentation
  Koyasan, Japan(招待講演)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Differential thermal analysis of Li3N-Al pseudobinary system for AlN growth2010
- Author(s)
  T.Yayama, Y.Kangawa, K.Kakimoto
- Organizer
  The 16th. International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth2010
- Author(s)
  T.Yayama, Y.Kangawa, K.Kakimoto
- Organizer
  The 3rd International Symposium on Growth of III-Nitride 2010 (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-04
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AlN溶液成長に向けたLi3N-Al擬二元系状態図解析2010
- Author(s)
  屋山巴, 寒川義裕, 柿本浩一
- Organizer
  2010年第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AlN成長に向けたLi3N-Al擬二元系状態図2010
- Author(s)
  屋山巴, 寒川義裕, 柿本浩一
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li_3N2009
- Author(s)
  Y.Kangawa
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Li_3Nを窒素源とする気相成長により作製したAlN/sapphireの微細組織観察2009
- Author(s)
  寒川義裕
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(つくば市)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] (招待講演)Possibility of AlN growth using Li-Al-N solvent2009
- Author(s)
  Y.Kangawa
- Organizer
  6th International Workshop on Bulk Nitride
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] CL studies of AlN/AlN(0001) grown by solid source solution growth method
- Author(s)
  H. Sumiyoshi, Y. Kangawa, S. F. Chichibu, M. Knetzger, E. Meissner, Y. Iwasaki, K. Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2014 (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] 固体ソース溶液成長におけるAlN成長機構の解析
- Author(s)
  住吉央朗, 寒川義裕, 秩父重英, M. Knetzger, E. Meissner, 岩崎洋介, 柿本浩一
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25 – 2014-07-26
- Data Source
  KAKENHI-PROJECT-25420712

1. KAKIMOTO Koichi (90291509)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
2. LIU Lijun (00380535)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. KANGAWA Yoshihiro (80423557)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. UDA Satoshi (90361170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. HUANG Xinming (80375104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. OHACHI Tadashi (40066270)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. HASHIMOTO Akihiro (10251985)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KOMORI Fumio (60170388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MIZUNO Seigi (60229705)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. VISIKOVSKIY Anton (70449487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. INAGAKI Yuji (10335458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. KOUKITU Akinori (10111626)

# of Collaborated Projects: 1 results

# of Collaborated Products: 23 results
14. KUWANO Noriyuki (50038022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. HATA Satoshi (60264107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ITO Tomonori (80314136)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
17. 秋山亨 (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 19 results
18. 正直花奈子 (60779734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 31 results
20. 平松和政 (50165205)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 草場彰 (70868926)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
22. 杉山佳奈美 (70974377)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 新田州吾 (80774679)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 山田陽一 (00251033)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. 上杉謙次郎 (40867305)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. BOĆKOWSKI Michał

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. MEISSNER Elke

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
29. 押山淳

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Kangawa Yoshihiro 寒川 義裕

KANGAWA Yoshihiro 寒川 義裕

Research Projects

Research Products

Co-Researchers

半導体化学気相成長の科学Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDs

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

A new fabrication technique of AlN/sapphire templatePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Computational materials design for hetero-bond manipulation

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of AlN growth method using AlN powderPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of graphene nanostructures and correlation to electronic properties

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of new method of crystal growth using dynamic electromagnetic force

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Nano-analysis of occupation sites of impurity atoms and relation with functional characteristics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018

Author(s)

Total Pages

Publisher

ISBN

Data Source

[Journal Article] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach2021

Author(s)

Journal Title

DOI

Kangawa Yoshihiro 寒川義裕

KANGAWA Yoshihiro 寒川義裕