Watanabe Heiji 渡部平司

… Alternative Names

WATANABE Heiji 渡部平司

WATABABE Heiji 渡部平司

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Researcher Number	90379115
Other IDs
Affiliation (Current)	2025: 大阪大学, 大学院工学研究科, 教授
Affiliation (based on the past Project Information) *help	2022 – 2025: 大阪大学, 大学院工学研究科, 教授 2019 – 2021: 大阪大学, 工学研究科, 教授 2016 – 2017: 大阪大学, 工学研究科, 教授 2016 – 2017: 大阪大学, 大学院工学研究科, 教授 2013 – 2015: 大阪大学, 工学(系)研究科(研究院), 教授 … More 2014: 大阪大学, 大学院工学研究科, 教授 2014: 大阪大学, 工学研究科, 教授 2011: 大阪大学, 大学院・工学研究科, 教授 2008 – 2010: 大阪大学, 工学研究科, 教授 2007 – 2009: Osaka University, 大学院・工学研究科, 教授 2006: 大阪大学, 大学院工学研究科, 助教授 2006: Osaka University, Graduate School of Engineering, Division of Advanced Science and Biotechnology, Professor, 大学院工学研究科, 教授 2004 – 2005: 大阪大学, 大学院・工学研究科, 助教授 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties / Science and Engineering / Broad Section D Except Principal Investigator Electronic materials/Electric materials / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Quantum beam science / Production engineering/Processing studies / Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator MOS構造 / パワーエレクトロニクス / パワーデバイス / 電子・電気材料 / 界面科学 / 炭化珪素 / 表面・界面物性 / 炭化珪素半導体 / 界面反応制御 / 窒化ガリウム … More / 光電子融合デバイス / ゲルマニウム / Ⅳ族混晶半導体 / 界面反応 / 界面物性 / 界面 / 薄膜界面 / MOSデバイス / 電子デバイス / 材料加工・処理 / 計算物理 / 表面・界面 / 超薄膜 / 先端機能デバイス / 第一原理計算 / ゲート絶縁膜 / 電気伝導 / 半導体デバイス … More Except Principal Investigator エピタキシャル成長 / 結晶成長 / 半導体 / ゲルマニウム / 作成・評価技術 / 電気・電子材料 / 電子デバイス / GeSn / スパッタリング / ゲルマニウムスズ / 結晶工学 / 電子・電気材料 / シリコンフォトニクス / 量子ビーム / 光源技術 / X線 / 画像回復計算 / 超解像 / イメージング / Ｘ線 / nano-imprint / solid phase crystallization / Ge nano-crystal / crystal nucleus / large-grain / glass substrate / Si thin film / polycrystalline Si / 固相結晶化 / 自己組織化 / 核形成 / 結晶核 / Ge微結晶 / ガラス基板 / 大粒径 / 多結晶Si薄膜 / MOSトランジスタ / MOSFET / ショットキー接合 / ゲート絶縁膜 / パワーデバイス / SiC / 格子歪み / バックゲートトランジスタ / 選択成長 / シリコンゲルマニウム / 急速昇温加熱 / 液相エピタキシャル成長 / Ge on insulator / 歪ゲルマニウム / ゲートスタック構造 / ポストスケーリング / 表面・界面物性 / 半導体物性 / ナノ材料 / デバイス設計・製造プロセス / 半導体超微細化 Less

Deep Insights into Heterointerface Engineering in Silicon Carbide based DevicesPrincipal Investigator
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  The University of Osaka
Construction of sputter epitaxy method for GeSn crystals with high Sn concentration
- Principal Investigator
  
  Kuniyoshi Mizuki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Osaka University
Reconsideration of interface science and engineering of silicon carbide-based metal-oxide-semiconductor interfacePrincipal Investigator
- Principal Investigator
  
  Watanabe Heiji
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Creation of high performance and highly reliable GaN MOS devices based on interface engineeringPrincipal Investigator
- Principal Investigator
  
  WATANABE Heiji
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivationPrincipal Investigator
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray Targets
- Principal Investigator
  
  Shimura Takayoshi
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Quantum beam science
- Research Institution
  Osaka University
Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
- Principal Investigator
  
  Shimura Takayoshi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
先端ゲートスタックプロセスによる高信頼性ＳｉＣ－ＭＯＳＦＥＴの開発Principal Investigator
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic propertiesPrincipal Investigator
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Improvement of SiO2/SiC interface quality by beam induced interface reactionsPrincipal Investigator
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterization
- Principal Investigator
  
  SHIMURA Takayoshi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of SiC-based plasmonic transistors with Schottky source/drain
- Principal Investigator
  
  HOSOI Takuji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Fabrication and electrical characterization of GOI structures by rapid melt growth
- Principal Investigator
  
  SHIMURA Takayoshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
原子制御プロセスによる超薄MOS構造の作製とその伝導特性および界面物性の解析Principal Investigator
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
高性能SiCパワーエレクトロニクス実現に向けた理想MOS構造作製プロセスの創成Principal Investigator
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Fabrication of High-quality SiC-MOSFETs for Advanced Power ElectronicsPrincipal Investigator
- Principal Investigator
  
  WATANABE Heiji
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (S)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
原子制御プロセスによる金属/超薄酸化膜/半導体構造の作製とその伝導特性解析Principal Investigator
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2006
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Fabrication of Large-Grained Polycrystalline Si Thin Films by Controlling Nucleation Sites on Glass Substrates
- Principal Investigator
  
  YASUTAKE Kiyoshi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Osaka University

[Book] 半導体SiC技術と応用2011
- Author(s)
  渡部平司
- Publisher
  日刊工業新聞社
- Data Source
  KAKENHI-PROJECT-19676001
[Book] 「システムオンパネルをめざした低温ポリシリコン薄膜トランジスタの開発」第2編第6章"Ge核を用いたSi薄膜の低温結晶化技術"(監修浦岡行治)2007
- Author(s)
  安武潔, 渡部平司, 大参宏昌, 垣内弘章
- Total Pages
  12
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Book] システムオンパネルをめざした低温ポリシリコン薄膜トランジスタの開発(第2編第6章 Ge核を用いたSi薄膜の低温結晶化技術)(監修浦岡行治)2007
- Author(s)
  安武潔, 渡部平司, 大参宏昌, 垣内弘章
- Total Pages
  11
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy2024
- Author(s)
  Kobayashi Takuma、Suzuki Asato、Nakanuma Takato、Sometani Mitsuru、Okamoto Mitsuo、Yoshigoe Akitaka、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 175 Pages: 108251-108251
- DOI
  10.1016/j.mssp.2024.108251
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05338, KAKENHI-PROJECT-21K18170
[Journal Article] Impact of Sn incorporation on sputter epitaxy of GeSn2023
- Author(s)
  Tanaka Nobuyuki、Kuniyoshi Mizuki、Abe Kazuya、Hoshihara Masaki、Kobayashi Takuma、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 9 Pages: 095502-095502
- DOI
  10.35848/1882-0786/acf4df
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04880
[Journal Article] Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing2023
- Author(s)
  Mikake Bunichiro、Kobayashi Takuma、Mizobata Hidetoshi、Nozaki Mikito、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 3 Pages: 031004-031004
- DOI
  10.35848/1882-0786/acc1bd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Design of SiO2/4H-SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing2023
- Author(s)
  Kil Tae-Hyeon、Kobayashi Takuma、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  AIP Advances
  
  Volume: 13 Issue: 11 Pages: 115304-115304
- DOI
  10.1063/5.0169573
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K18170
[Journal Article] Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates2023
- Author(s)
  T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondoh, M. Kuniyoshi, T. Hosoi, T. Kobayashi and H. Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1083-SC1083
- DOI
  10.35848/1347-4065/acb9a2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04880, KAKENHI-PROJECT-20H02620, KAKENHI-PROJECT-23K22798
[Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022
- Author(s)
  T. Nakanuma, T. Kobayashi, T. Hosoi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 4 Pages: 041002-041002
- DOI
  10.35848/1882-0786/ac5ace
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K18170, KAKENHI-PROJECT-21K20429, KAKENHI-PROJECT-20K05338
[Journal Article] Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth2022
- Author(s)
  H. Mizobata, M. Nozaki, T. Kobayashi, T. Hosoi, T. Shimura and H. Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SC Pages: SC1034-SC1034
- DOI
  10.35848/1347-4065/ac44cd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000-1) substrates2022
- Author(s)
  Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 121 Issue: 6 Pages: 062104-062104
- DOI
  10.1063/5.0095468
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05338, KAKENHI-PROJECT-19H00767
[Journal Article] Insight into interface electrical properties of metal-oxide-semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing2022
- Author(s)
  Y. Wada, H. Mizobata, M. Nozaki, T. Kobayashi, T. Hosoi, T. Kachi, T. Shimura and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 8
- DOI
  10.1063/5.0081198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway2021
- Author(s)
  Y. Wada, H. Mizobata, M. Nozaki, T. Hosoi, T. Narita, T. Kachi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 7 Pages: 071001-071001
- DOI
  10.35848/1882-0786/ac057d
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices2020
- Author(s)
  Mizobata Hidetoshi、Wada Yuhei、Nozaki Mikito、Hosoi Takuji、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 8 Pages: 081001-081001
- DOI
  10.35848/1882-0786/aba320
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices2020
- Author(s)
  Wada Yuhei、Nozaki Mikito、Hosoi Takuji、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SM Pages: SMMA03-SMMA03
- DOI
  10.35848/1347-4065/ab7fe6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beam2020
- Author(s)
  A. Uedono, W. Ueno, T. Yamada, T. Hosoi, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and H. Watanabe
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 127 Issue: 5
- DOI
  10.1063/1.5134513
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Journal Article] Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization2018
- Author(s)
  H. Oka, T. Tomita, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 011304-011304
- DOI
  10.7567/apex.11.011304
- NAID
  210000136058
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
[Journal Article] Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization2017
- Author(s)
  H. Oka, T. Amamoto, M. Koyama, Y. Imai, S. Kimura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 3 Pages: 032104-032104
- DOI
  10.1063/1.4974473
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
[Journal Article] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2016
- Author(s)
  A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 445-448
- DOI
  10.4028/www.scientific.net/msf.858.445
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-15K13951
[Journal Article] Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures2016
- Author(s)
  A. Chanthaphan, Y. Cheng, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 627-630
- DOI
  10.4028/www.scientific.net/msf.858.627
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14F04359
[Journal Article] Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces2016
- Author(s)
  A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 12 Pages: 120303-120303
- DOI
  10.7567/jjap.55.120303
- NAID
  210000147279
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14F04359
[Journal Article] Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers2015
- Author(s)
  S. Ogawa, R. Asahara, Y. Minoura, H. Sako, N. Kawasaki, I. Yamada, T. Miyamoto, T. Hosoi, T. Shimura and H. Watanabe
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118 Issue: 23 Pages: 23704-23704
- DOI
  10.1063/1.4937573
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 5 Pages: 305-311
- DOI
  10.1149/06905.0305ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03975
[Journal Article] Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures2015
- Author(s)
  Y. Fukushima, A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 26 Pages: 261604-261604
- DOI
  10.1063/1.4923470
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13951, KAKENHI-PROJECT-14F04359
[Journal Article] Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack2015
- Author(s)
  T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 25 Pages: 252104-252104
- DOI
  10.1063/1.4938397
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2015
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimura, T. Amamoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 22 Pages: 221109-221109
- DOI
  10.1063/1.4936992
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975
[Journal Article] Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas2015
- Author(s)
  A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  AIP Advances
  
  Volume: 5 Issue: 9 Pages: 097134-097134
- DOI
  10.1063/1.4930980
- NAID
  120007183058
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14F04359
[Journal Article] Comprehensive Study and Design of Scaled Metal/High-k/Ge Gate Stacks with Ultrathin Aluminum Oxide Interlayers2015
- Author(s)
  Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka, Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 23 Pages: 233503-233503
- DOI
  10.1063/1.4922447
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26420289, KAKENHI-PROJECT-25246028
[Journal Article] Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy2014
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 104 Issue: 3 Pages: 31106-31106
- DOI
  10.1063/1.4862890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22681012, KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246021, KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-25600014
[Journal Article] Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing2014
- Author(s)
  A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 778-780 Pages: 541-541
- DOI
  10.4028/www.scientific.net/msf.778-780.541
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
[Journal Article] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2014
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 109 Pages: 137-141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation2014
- Author(s)
  H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 6 Pages: 062107-062107
- DOI
  10.1063/1.4893152
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy2014
- Author(s)
  T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 105 Issue: 17 Pages: 173502-173502
- DOI
  10.1063/1.4900442
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246028
[Journal Article] Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation2014
- Author(s)
  細井　卓治、上西　悠介、中野　佑紀、中村　孝、志村　考功、渡部　平司
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 562-565
- DOI
  10.4028/www.scientific.net/msf.778-780.562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686008
[Journal Article] Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics2014
- Author(s)
  A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 12 Pages: 122105-122105
- DOI
  10.1063/1.4870047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
[Journal Article] Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface2014
- Author(s)
  D. Ikeguchi, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 1 Pages: 12107-12107
- DOI
  10.1063/1.4860987
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630124
[Journal Article] Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics2013
- Author(s)
  Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 3 Pages: 33502-33502
- DOI
  10.1063/1.4813829
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing2013
- Author(s)
  渡部平司
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 741-744
- DOI
  10.4028/www.scientific.net/msf.740-742.741
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686008, KAKENHI-PROJECT-25630124
[Journal Article] Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and(000-1) C-Face Substrates2012
- Author(s)
  H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 697 Pages: 717-720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method-Novel Platform for High-Mobility Transistors and Photonic Devices2012
- Author(s)
  Heiji Watanabe
- Journal Title
  
  ECS Transaction
  
  Volume: 50 Issue: 4 Pages: 261-266
- DOI
  10.1149/05004.0261ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360120
[Journal Article] Impact of Interface Defect Passivation on Conduction Band Offset at SiO_2/ 4H-SiC Interface2012
- Author(s)
  T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 721 Pages: 717-720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices2012
- Author(s)
  D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 765 Pages: 717-720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Gate Stack Technologies for SiC Power MOSFETs2011
- Author(s)
  H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
- Journal Title
  
  ECS Trans
  
  Volume: 41[ 3] Pages: 77-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Investigation of Surface and Interface Morphology of Thermally Grown SiO_2 Dielectrics on 4H-SiC(0001) Substrates2011
- Author(s)
  T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 342 Pages: 679-680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma2011
- Author(s)
  H.Watanabe, et al
- Journal Title
  
  Journal of Nanoscience and Nanotechnology
  
  Volume: 11(4) Issue: 4 Pages: 2802-2808
- DOI
  10.1166/jnn.2011.3911
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma2011
- Author(s)
  H. Watanabe, H. Ohmi, H. Kakiuchi, T. Hosoi, T. Shimura, K. Yasutake
- Journal Title
  
  Journal of Nanoscience and Nanotechnology
  
  Volume: 11 Pages: 2802-2802
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Surface Cleaning and Etching of 4H-SiC(0001) Using High-density Atmospheric Pressure Hydrogen Plasma2011
- Author(s)
  H.Watanabe, et al.
- Journal Title
  
  Journal of Nanoscience and Nanotechnology
  
  Volume: 11 Pages: 2802-2808
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Impact of Stacked AlON/SiO_2 Gate Dielectrics for SiC Power Devices2011
- Author(s)
  H.Watanabe, et al
- Journal Title
  
  ECS Transactions
  
  Volume: 35(2) Issue: 2 Pages: 265-274
- DOI
  10.1149/1.3568869
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO_2/ 4H-SiC(0001) interface and its correlation with electrical properties2011
- Author(s)
  H. Watanabe, T. Hosoi, T. Kirino, Y. Kagei, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, and T. Shimura
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 99 Pages: 21907-21907
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO_2/4H-SiC(0001) interface and its correlation with electrical properties2011
- Author(s)
  H.Watanabe, et al
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Issue: 2
- DOI
  10.1063/1.3610487
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Energy Band Structure of SiO_2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer2011
- Author(s)
  H.Watanabe, et al.
- Journal Title
  
  Materials Science Forum
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Reduction of Charge Trapping Sites in Al_2O_3/ SiO_2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices2011
- Author(s)
  T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 496 Pages: 679-680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Gate Stack Technologies for SiC Power MOSFETs2011
- Author(s)
  H.Watanabe, et al
- Journal Title
  
  ECS Transactions
  
  Volume: 41(3) Issue: 3 Pages: 77-90
- DOI
  10.1149/1.3633023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Energy Band Structure of SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer2011
- Author(s)
  H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 386 Pages: 679-680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Impact of Stacked AlON/ SiO_2 Gate Dielectrics for SiC Power Devices2011
- Author(s)
  H. Watanabe, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi and T. Shimura
- Journal Title
  
  ECS Trans
  
  Volume: 35[ 2] Pages: 265-265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Improved Characteristics of 4H-SiC MISFET with AlON/ Nitrided SiO_2 Stacked Gate Dielectrics2010
- Author(s)
  T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 991 Pages: 645-648
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces2010
- Author(s)
  Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 507 Pages: 645-648
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(001) Using Conductive Atomic Force Microscopy2010
- Author(s)
  K. Kozono, T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 821 Pages: 645-648
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces2010
- Author(s)
  Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 507-510
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Improved characteristics of 4H-SiC MISFET with AlON/nitrided SiO_2 stacked gate dielectrics2010
- Author(s)
  T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, H. Watanabe
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 991-994
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy2010
- Author(s)
  K. Kozono, T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 821-824
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010
- Author(s)
  T. Shimura, S. Ogiwara, C. Yoshimoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 3 Pages: 066502-066502
- DOI
  10.1143/apex.2.066502
- NAID
  10027441491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360149
[Journal Article] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2010
- Author(s)
  Heiji Watanabe, Takayoshi Shimura
- Journal Title
  
  The Proceedings of International workshop on Active-matrix flatpanel displays and devices
  
  Pages: 53-56
- Data Source
  KAKENHI-PROJECT-21360149
[Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 2 Issue: 10 Pages: 105501-105501
- DOI
  10.1143/apex.3.105501
- NAID
  10025086916
- Data Source
  KAKENHI-PROJECT-21360149
[Journal Article] Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO_2/ SiC interfaces2009
- Author(s)
  H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano, and T. Nakamura
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 525 Pages: 615-617
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] AlON/ SiO_2 Stacked Gate Dielectrics for 4H-SiC MIS Devices2009
- Author(s)
  T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 541 Pages: 615-617
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO_2/Ge metal-oxide-semiconductor devices2009
- Author(s)
  T. Hosoi, K. Kutsuki, G. Okamoto, M. Saito, T. Shimura, H. Watanabe
- Journal Title
  
  Appl. Phys. Lett. 94
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] AlON/SiO_2 stacked gate dielectrics for 4H-SiC MIS devices2009
- Author(s)
  T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, H Watanabe
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 541-544
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces2009
- Author(s)
  H. Watanabe, et al.
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 525-528
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] First-principles study to obtain evidence of low interface defect density at Ge/GeO_2 interfaces2009
- Author(s)
  S. Saito, T. Hosoi, H. Watanabe, T. Ono
- Journal Title
  
  Appl. Phys. Lett. 95
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Fabrication of local Ge-on-Insulator structures by lateral liquid-phase epitaxy: effect of controlling interface energy between Ge and insulators on lateral epitaxial growth2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe
- Journal Title
  
  Appl. Phys. Express 2
- NAID
  10025086916
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)2009
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
- Journal Title
  
  Appl. Phys. Lett. 95
- NAID
  120007183052
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO_2/SiC interfaces2009
- Author(s)
  H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 525-528
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Journal Article] Fundamental aspects of effective work function instability of metal/Hf-based high-k gate stacks2008
- Author(s)
  H. Watanabe, et.al.
- Journal Title
  
  ECS Transactions 16
  
  Pages: 27-38
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19019010
[Journal Article] Observation of crystalline imperfection in supercritical thickness strained silicon on insulator wafers by synchrotron x-ray topography2008
- Author(s)
  T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, H. Watanabe
- Journal Title
  
  ECS Transactions 16
  
  Pages: 539-543
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Application of synchrotron x-ray diffraction methods to gate stacks of advanced MOS devices2008
- Author(s)
  T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe
- Journal Title
  
  ECS Transactions 13
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Characteristics of pure Ge_3N_4 dielectric layers formed by high-density plasma nitridation2008
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
- Journal Title
  
  Japanese J. Appl. Phys. 47
  
  Pages: 2415-2419
- NAID
  10022551546
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation2007
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
- Journal Title
  
  Applied Physics Letters 91
- NAID
  120007183049
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation2007
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Lett. 91
- NAID
  120007183049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] プラズマ窒化によるゲルマニウム窒化膜の形成とその安定性評価2007
- Author(s)
  朽木克博, 岡本学, 志村考功, 安武潔, 渡部平司
- Journal Title
  
  第54回応用物理学関係連合講演会講演予稿集第2分冊
  
  Pages: 864-864
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Impact of physical vapor deposition-based in situ fabrication method on metal/high-k gate stacks2007
- Author(s)
  H., Watanabe, et. al.
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1910-1915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19019010
[Journal Article] Humidity-Dependent Stability of Amorphous Germanium Nitrides Fabricated by Plasma Nitridation2007
- Author(s)
  K.Kutsuki, G.Okamoto, T.Hosoi, T.Shimura, and H.Watanabe
- Journal Title
  
  Appl.Phys.Lett. 91
- NAID
  120007183049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates (Invited)2006
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi
- Journal Title
  
  Meeting Abst. MA 2006-02 Joint Int. Meeting of 210th Meeting of The Electrochemical Society and XXI Congreso de la Sociedad Mexicana de Electroquimica Cancun, Mexico, (2006) #1575.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates2006
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi
- Journal Title
  
  ECS Transactions 3巻・8号
  
  Pages: 215-225
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Fabrication of Polycrystalline Silicon Thin Films on Glass Substrates Using Ge Nano-Islands as Nuclei2006
- Author(s)
  K.Minami, C.Yoshimoto, H.Ohmi, T.Shimura, H.Kakiuchi, H.Watanabe, K.Yasutake
- Journal Title
  
  Ext.Abst. of Int.21st Century COE Symp. on Atomistic Fabrication Technology 19-29
  
  Pages: 65-66
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Interface Engineering of High-k Gate Dielectrics for Advanced CMOS2006
- Author(s)
  H.Watanabe
- Journal Title
  
  Abstracts of Handai Nanoscience and Technology International Symposium
  
  Pages: 30-30
- Data Source
  KAKENHI-PROJECT-18036007
[Journal Article] Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates2006
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi
- Journal Title
  
  ECS Transactions 3 [8]
  
  Pages: 215-225
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates2006
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi
- Journal Title
  
  ECS Transactions 3・8
  
  Pages: 215-225
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties2006
- Author(s)
  H.Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 2933-2938
- NAID
  10022541566
- Data Source
  KAKENHI-PROJECT-18036007
[Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006
- Author(s)
  T. Shimura, M. Shimizu, S. Horiuchi, H. Watanabe, K. Yasutake, M. Umeno
- Journal Title
  
  Appl. Phys. Lett. 89
- NAID
  120007183055
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films2004
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi, S.Koyama, D.Nakajima, K.Minami
- Journal Title
  
  Proceedings of Thin Film Materials & Devices Meeting
  
  Pages: 19-24
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching2004
- Author(s)
  K.YASUTAKE, H.OHMI, H.KAKIUCHI, H.WATANABE, K.YOSHII, Y.MORI
- Journal Title
  
  Japanese Journal of Applied Physics 43・12A
- NAID
  10015473490
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching2004
- Author(s)
  K.Yasutake, H.Ohmi, H.Kakiuchi, H.Watanabe, K.Yoshii, Y.Mori
- Journal Title
  
  Jpn.J.Appl.Phys. 43 [12A]
- NAID
  10015473490
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films2004
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi, S.Koyama, D.Nakajima, K.Minami
- Journal Title
  
  Proc. Thin Film Materials ＆ Devices Meeting
  
  Pages: 19-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films2004
- Author(s)
  K.Yasutake, H.Watanabe, H.Ohmi, H.Kakiuchi, S.Koyama, D.Nakajima, K.Minami
- Journal Title
  
  Proc. Thin Film Materials ＆ Devices Meeting (2004)
  
  Pages: 19-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching2004
- Author(s)
  K.Yasutake, H.Ohmi, H.Kakiuchi, H.Watanabe, K.Yoshii, Y.Mori
- Journal Title
  
  Jpn. J. Appl. Phys. (2004) 43巻・12A号
- NAID
  10015473490
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360070
[Journal Article] Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma
- Author(s)
  H. Watanabe, H. Ohmi, H. Kakiuchi, T. Hosoi, T. Shimura, K. Yasutake
- Journal Title
  
  Journal of Nanoscience and Nanotechnology (accepted)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19676001
[Patent] 半導体装置およびその製造方法2012
- Inventor(s)
  渡部平司、志村考功、細井卓治、箕谷周平、中野佑紀、中村亮太、中村孝
- Industrial Property Rights Holder
  ローム(株)
- Industrial Property Number
  2012-039059
- Filing Date
  2012-02-24
- Data Source
  KAKENHI-PROJECT-19676001
[Patent] 半導体装置およびその製造方法2012
- Inventor(s)
  渡部平司, 他
- Industrial Property Rights Holder
  ローム(株)
- Industrial Property Number
  2012-039059
- Filing Date
  2012-02-24
- Data Source
  KAKENHI-PROJECT-19676001
[Patent] 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板2012
- Inventor(s)
  志村考功、渡部平司、細井卓治
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2012-042746
- Filing Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-21360149
[Patent] 半導体装置2009
- Inventor(s)
  渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
- Industrial Property Rights Holder
  ローム(株)
- Industrial Property Number
  2009-206374
- Filing Date
  2009-09-07
- Data Source
  KAKENHI-PROJECT-19676001
[Patent] 半導体装置2009
- Inventor(s)
  渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
- Industrial Property Rights Holder
  ローム(株)
- Industrial Property Number
  2009-206373
- Filing Date
  2009-09-07
- Data Source
  KAKENHI-PROJECT-19676001
[Patent] 半導体装置の製造方法および半導体装置2009
- Inventor(s)
  渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
- Industrial Property Rights Holder
  ローム(株)
- Industrial Property Number
  2009-206372
- Filing Date
  2009-09-07
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Si基板上GeSn細線のレーザー溶融結晶化におけるレーザー走査条件と下地SiO2膜厚の最適化2024
- Author(s)
  早川雄大, 近藤優聖, 國吉望月, 小林拓真, 志村志功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第29回研究会）
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] Si基板上GeSn細線のレーザー溶融結晶化における下地SiO2膜厚とレーザー走査速度の最適化2024
- Author(s)
  早川雄大, 近藤優聖, 國吉望月, 小林拓真, 志村孝功, 渡部平司
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] 犠牲酸化プロセスによる SiC MOSFET の電気特性劣化2024
- Author(s)
  八軒慶慈, 藤本博貴, 小林拓真, 平井悠久, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Si基板上GeSn細線のレーザー溶融結晶化と光学特性評価2023
- Author(s)
  近藤優聖, 田淵直人, 國吉望月, 小林拓真, 志村考功, 渡部平司
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] A SiO2/SiC interface formed by direct bonding of SiO2 and SiC2023
- Author(s)
  S. Kamihata, T. Kobayashi, T. Shimura, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] スパッタ成膜によるGe(100)基板上への高品質単結晶GeSn層のエピタキシャル成長2023
- Author(s)
  田中信敬, 國吉望月, 安部和弥, 星原雅生, 小林拓真, 志村志功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第28回研究会）
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] プラズマ窒化・SiO2堆積・CO2熱処理の複合プロセスによる高品質 SiC MOS 構造の形成2023
- Author(s)
  藤本博貴, 小林拓真，志村考功，渡部平司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] ゲートストレス印加による SiC MOS 界面の劣化とデバイス特性への影響2023
- Author(s)
  小柳香穂, 小林拓真, 平井悠久, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Improved interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface prior to SiO2 deposition2023
- Author(s)
  H. Fujimoto, T. Kobayashi, Y. Iwakata, T. Shimura, and Heiji Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Fabrication of SiO2/4H-SiC MOS devices by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing2023
- Author(s)
  T. Kil, T. Kobayashi, T. Shimura, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] SiO2と SiC の直接貼り合わせによる SiO2/SiC 構造の形成2023
- Author(s)
  神畠真治, 小林拓真, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Evaluation of hole trap density at SiO2/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination2022
- Author(s)
  T. Kobayashi, K. Tomigahara, H. Mizobata, M. Nozaki, T. Shimura, H. Watanabe
- Organizer
  International Workshop on Nitride Semiconductors (IWN)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Control of oxidation and reduction reactions at SiO2/GaN interfaces towards high performance and reliability GaN MOSFETs2022
- Author(s)
  T. Kobayashi, B. Mikake, H. Mizobata, M. Nozaki, T. Shimura, H. Watanabe
- Organizer
  International Workshop on Nitride Semiconductors (IWN)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 超高圧活性化熱処理を施したMgイオン注入p-GaN MOSデバイスの電気特性に対する基板極性およびアクセプタ濃度の影響2022
- Author(s)
  溝端秀聡, 和田悠平, 野﨑幹人, 小林拓真, 細井卓治, 加地徹, 志村考功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 紫外光照射によるGaN MOS構造における正孔トラップの評価2022
- Author(s)
  冨ヶ原一樹, 中沼貴澄, 溝端秀聡, 野﨑幹人, 小林拓真, 志村考功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Recent progress and challenges in SiC and GaN MOS devices: understanding of physics and chemistry near the MOS interface2022
- Author(s)
  H. Watanabe, T. Kobayashi, T. Hosoi, T. Shimura
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices2022
- Author(s)
  A. Suzuki, T. Nakanuma, T. Kobayashi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] スパッタ成膜SiO2/GaN 構造におけるGa拡散抑制効果2022
- Author(s)
  大西健太郎, 小林拓真, 溝端秀聡, 野﨑幹人, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Recent progress and challenges in SiC and GaN MOS devices: understanding of physics and chemistry near the MOS interface2022
- Author(s)
  H. Watanabe, T. Kobayashi, T. Hosoi, T. Shimura
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Interface science and engineering for GaN-based MOS devices2022
- Author(s)
  H. Watanabe, H. Mizobata, M. Nozaki, T. Kobayashi, T. Hosoi, T. Shimura
- Organizer
  Topical Workshop on Heterostructure Microelectronics (TWHM)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] スパッタ成膜法によるGe(100)基板上のGeSnエピタキシャル成長2022
- Author(s)
  國吉望月, 安部和弥, 田中信敬, 星原雅生,小林拓真, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] NO窒化処理を施した非基底面SiC MOSデバイスの信頼性2022
- Author(s)
  中沼貴澄, 小林拓真 ,染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] NO窒化を施した非基底面上SiO2/SiC構造のバンドアライメント評価2022
- Author(s)
  中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Suppression of GaOx interlayer growth towards stable SiO2/GaN MOS devices2022
- Author(s)
  K. Onishi, T. Kobayashi, H. Mizobata, M. Nozaki, A. Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 酸化・還元反応制御に基づく高品質SiO2/GaN MOS構造の形成2022
- Author(s)
  見掛文一郎, 溝端秀聡, 野﨑幹人, 小林拓真, 志村考功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Ge(100)基板上にスパッタ成膜したエピタキシャルGeSn層の評価2022
- Author(s)
  田中信敬, 安部和弥, 星原雅生, 國吉望月, 小林拓真, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] Reliability Issues in Nitrided SiC MOS Devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] Nitridation-induced degradation of SiC(1-100) MOS devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A.Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] 酸素及び水素熱処理によるスパッタ成膜 SiO2/GaN MOS 構造の界面特性及び絶縁性向上2022
- Author(s)
  大西健太郎, 小林拓真, 溝端秀聡, 野﨑幹人, 吉越章隆, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] スパッタSiO2成膜によるSiO2/GaN MOS界面のGaOx層抑制2022
- Author(s)
  大西健太郎, 小林拓真, 溝端秀聡, 野﨑幹人, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Fabrication of stable and low leakage SiO2/GaN MOS devices by sputter deposition of SiO2 combined with post annealing processes2022
- Author(s)
  K. Onishi, T. Kobayashi, H. Mizobata, M. Nozaki, A. Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  International Workshop on Nitride Semiconductors (IWN)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] AlGaNキャップ層によるMgドープp-GaNの活性化抑制と水素脱離過程の制御による特性改善2022
- Author(s)
  溝端秀聡, 和田悠平, 野﨑幹人, 細井卓治, 成田哲生, 加地徹, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第27回研究会）
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 光吸収層を有する石英基板上GeSn細線のレーザー溶融結晶化2022
- Author(s)
  田淵直人, 山口凌雅, 近藤雅斗, 國吉望月, 細井卓治, 小林拓真, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第27回研究会）
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates2022
- Author(s)
  T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondo, M. Kuniyoshi, T. Hosoi, T. Kobayashi, H. Watanabe
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2022)
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] スパッタSiO2成膜よる安定なGaN MOS構造の形成2022
- Author(s)
  大西健太郎, 見掛文一郎, 冨ヶ原一樹, 溝端秀聡, 野崎幹人, 小林拓真, 志村考功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 水素ガスアニールにより生じるSiO2/GaN界面の異常な固定電荷の起源2021
- Author(s)
  溝端秀聡, 和田悠平, 野崎幹人, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第26回研究会）
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 超高圧活性化熱処理を施したMgイオン注入GaN上に形成したSiO2/GaN MOSキャパシタの電気特性評価2021
- Author(s)
  和田悠平, 溝端秀聡, 野﨑幹人, 小林拓真, 細井卓治, 櫻井秀樹, 加地徹, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] ワイドバンドギャップ半導体MOS界面特性の類似性と相違点2021
- Author(s)
  渡部平司
- Organizer
  先進パワー半導体分科会第8回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 超高圧活性化熱処理を施したMgイオン注入GaNを用いたPチャネルMOSFETの作製と評価2021
- Author(s)
  和田悠平, 溝端秀聡, 野﨑幹人, 小林拓真, 細井卓治, 櫻井秀樹, 加地徹, 志村考功, 渡部平司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] ワイドバンドギャップ半導体MOS界面特性の類似性と相違点2021
- Author(s)
  渡部平司
- Organizer
  先進パワー半導体分科会第8回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21K18170
[Presentation] SiO2/GaN MOSデバイスの性能向上に向けた堆積後熱処理条件の検討2021
- Author(s)
  溝端秀聡, 和田悠平, 野崎幹人, 細井卓治, 志村考功, 渡部平司
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 超高圧活性化熱処理を施したMgイオン注入GaNを用いたp型GaN MOSデバイスの電気特性評価2021
- Author(s)
  溝端秀聡, 和田悠平, 野﨑幹人, 小林拓真, 細井卓治, 加地徹, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] SiO2/GaN MOS構造におけるゲート絶縁膜信頼性への堆積後熱処理の効果2021
- Author(s)
  見掛文一郎, 溝端秀聡, 野﨑幹人, 小林拓真, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 石英基板上GeSn細線のレーザー溶融結晶化における光吸収層の検討2021
- Author(s)
  田淵直人, 國吉望月, 細井卓治, 小林拓真, 志村考功, 渡部平司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04880
[Presentation] GaN(0001)面上に形成したSiO2/GaN MOSキャパシタの電気特性評価2021
- Author(s)
  冨ケ原一樹, 和田悠平, 溝端秀聡, 野崎幹人, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] GaN(000-1)面上に形成したSiO2/GaN MOSキャパシタの電気特性評価2021
- Author(s)
  冨ヶ原一樹, 和田悠平, 溝端秀聡, 野﨑幹人, 吉越章隆, 細井卓治, 小林拓真, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Fixed charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth2021
- Author(s)
  H. Mizobata, M. Nozaki, T. Kobayashi, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] p-GaN MIS電気特性評価に向けたAlGaNバリア層の検討2020
- Author(s)
  和田悠平, 溝端秀聡, 野崎幹人, 細井卓治, 加地徹, 志村考功, 渡部平司
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] 水素ガスアニールに起因したSiO2/GaN界面での異常な固定電荷生成とその物理的起源2020
- Author(s)
  溝端秀聡, 和田悠平, 野崎幹人, 細井卓治, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第7回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Gate Stack Technology for Advanced GaN-based MOS Devices2020
- Author(s)
  H. Watanabe, T. Hosoi, M. Nozaki, H. Mizobata, and T. Shimura
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] SiO2/GaN MOSデバイスにおける水素ガスアニール起因の異常な固定電荷生成の理解2020
- Author(s)
  溝端秀聡, 和田悠平, 加賀三志郎, 野﨑幹人, 細井卓治, 志村考功, 渡部平司
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] Insight into Ga Diffusion in SiO2 Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices2019
- Author(s)
  Y. Wada, M. Nozaki, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  Dielectric Thin Films for Future Electron Devices -Science and Technology-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] SiO2中へのGa拡散がSiO2/GaN MOS特性に与える影響の評価2019
- Author(s)
  和田悠平，野崎幹人，細井卓治，志村考功，渡部平司
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-19H00767
[Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018
- Author(s)
  岡博史, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018
- Author(s)
  岡博史, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発2018
- Author(s)
  岡博史, 井上慶太郎, Thi Thuy Nguyen, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  映像情報メディア学会情報センシング研究会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018
- Author(s)
  冨田崇史, 岡博史, 井上慶太郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018
- Author(s)
  岡博史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic2018
- Author(s)
  H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  関西コロキアム電子デバイスワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018
- Author(s)
  細井卓治, 岡博史, 井上慶太郎, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018
- Author(s)
  冨田崇史, 岡博史, 井上慶太郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018
- Author(s)
  岡博史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018
- Author(s)
  細井卓治, 岡博史, 井上慶太郎, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 横方向液相エピタキシャル成長による高濃度Sbドープ単結晶Ge細線の作製と光学特性評価2017
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017
- Author(s)
  岡博史, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第64回応用物理学関係連合講演会
- Place of Presentation
  パシフィコ横浜, 神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長によって作製した引張歪み高濃度n 型Ge 細線の光学特性評価2017
- Author(s)
  冨田崇史，岡博史，小山真広，田中章吾，細井卓治，志村考功，渡部平司
- Organizer
  2017年春季第64回応用物理学関係連合講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017
- Author(s)
  岡博史, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  2017年春季第64回応用物理学関係連合講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017
- Author(s)
  岡　博史、井上慶太、冨田崇史、和田裕希、細井卓治、志村考功、渡部平司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] シードレス液相成長による単結晶GeSn超薄膜形成と電気特性評価2017
- Author(s)
  小山真広, 岡博史, 田中章吾, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017
- Author(s)
  岡博史、井上慶太、冨田崇史、和田裕希、細井卓治、志村考功、渡部平司
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip2017
- Author(s)
  H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  63rd IEEE International Electron Devices Meeting (2017 IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Enhancement-mode n-channel TFT and room-temperature near-infrared emission based on n+/p junction in single-crystalline GeSn on transparent substrate2017
- Author(s)
  H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
- Organizer
  Symposium on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Back-side illuminated GeSn photodiode array on quartz substrate fabricated by laser-induced liquid-phase crystallization for monolithically-integrated NIR imager chip2017
- Author(s)
  H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE International Electron Devices Meeting (2017 IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate2017
- Author(s)
  H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
- Organizer
  2017 Symposium on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] High-mobility GeSn p-MOSFETs on Transparent Substrate Utilizing Nucleation-controlled Liquid-phase Crystallization2016
- Author(s)
  H. Oka, T. Amamoto, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2016-06-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-enhanced Oxidation using Barium2016
- Author(s)
  A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM 2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] マイクロフォーカスX線源と振幅格子を用いたX線位相イメージングの検討2016
- Author(s)
  細野凌, 森本直樹, 伊藤康浩, 山崎周, 佐野壱成, 土岐貴弘, 佐野哲, 細井卓治, 渡部平司, 志村考功
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13408
[Presentation] High-mobility GeSn-based MOSFETs on Transparent Substrates2016
- Author(s)
  H. Watanabe
- Organizer
  International SiGe Technology and Device Meeting
- Place of Presentation
  Nagoya, Aichi, JAPAN
- Year and Date
  2016-06-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration2016
- Author(s)
  H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE International Electron Devices Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2016-12-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, HI, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  第77回応用物理学関係連合講演会
- Place of Presentation
  朱鷺メッセ, 新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] SiO2/SiC 界面窒化処理を施したSiC-MOS デバイスにおける正孔捕獲挙動に関する考察2016
- Author(s)
  細井卓治, 勝義仁, Atthawut Chanthaphan, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場, つくば市
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  2016年秋季第77回応用物理学関係連合講演会
- Place of Presentation
  新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2015
- Author(s)
  A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures2015
- Author(s)
  A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] 高温N2アニールによる新たなSiO2/4H-SiC界面窒化技術2015
- Author(s)
  チャンタパンアタウット, 鄭彦宏 , 細井卓治, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第２回講演会
- Place of Presentation
  大阪府大阪市
- Year and Date
  2015-11-09
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] ゲルマニウム半導体を基盤とした次世代光電子集積デバイスへの展開2015
- Author(s)
  渡部平司
- Organizer
  日本真空学会関西支部＆日本表面科学会関西支部合同セミナー
- Place of Presentation
  大阪府、豊中市
- Year and Date
  2015-07-03
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2015
- Author(s)
  A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13951
[Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Interface nitridation of thermally-grown SiO2/4H-SiC by post-oxidation annealing in pure nitrogen gas2015
- Author(s)
  Atthawut Chanthaphan, Yen Hung Cheng, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
- Organizer
  2015年秋季第76回応用物理学関係連合講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices2015
- Author(s)
  T. Hosoi, H. Oka, Y. Minoura, T. Shimura, and H. Watanabe
- Organizer
  The 15th International Workshop on Junction Technology
- Place of Presentation
  Kyoto University Kihada Hall (Uji Campus), Kyoto
- Year and Date
  2015-06-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology2015
- Author(s)
  H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  第15回関西コロキアム電子デバイスワークショップ
- Place of Presentation
  大阪府大阪市
- Year and Date
  2015-12-15
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] SiC MOSデバイスにおける界面窒化処理に起因した正孔トラップ生成2015
- Author(s)
  勝義人, チャンタパンアタウット, 細井卓治, 志村考功, 渡部平司
- Organizer
  2015年秋季第76回応用物理学関係連合講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] SiO2/SiC Interface Nitridation by High Temperature Pure Nitrogen Annealing2015
- Author(s)
  T. Hosoi, A. Chanthaphan, T. Shimura, and H. Watanabe
- Organizer
  The 46th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, VA, USA
- Year and Date
  2015-12-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] 横方向液相成長法による石英基板上単結晶GeSn細線の作製と光学特性評価2015
- Author(s)
  天本隆史, 冨永幸平, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  第76回応用物理学関係連合講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 界面窒化処理を施したSiC MOSデバイスのキャリア捕獲挙動評価2015
- Author(s)
  勝義仁, チャンタパンアタウット, 細井卓治, 南園悠一郎, 木本恒暢, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第２回講演会
- Place of Presentation
  大阪府大阪市
- Year and Date
  2015-11-09
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] 横方向液相成長によって作製したGeSn-on-insulator構造のバンドギャップ変調評価2014
- Author(s)
  4.冨永幸平，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 極薄EOT high-k/Geゲートスタックの熱安定性及び界面特性改善に向けたプロセス設計2014
- Author(s)
  淺原亮平, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子情報通信学会シリコン材料・デバイス(SDM)研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長法により作製したn型Ge-on-insulator層の直接遷移発光の増強2014
- Author(s)
  梶村恵子，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長法によりY2O3層上に形成した局所GOI層の電気特性評価2014
- Author(s)
  梶村恵子，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製した局所GeSn-on-insulator層の優先結晶方位2014
- Author(s)
  3.冨永幸平，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長によって作製したGeワイヤのフォトルミネッセンス測定によるバンドギャップ変調評価2014
- Author(s)
  梶村恵子, 松江将博, 安武裕輔, 深津晋, 細井卓治, 志村考功, 渡部平司
- Organizer
  ゲートスタック研究会　―材料・プロセス・評価の物理―」(第１９回研究会）
- Place of Presentation
  静岡県熱海市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer2013
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013
- Author(s)
  T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013
- Author(s)
  T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013),
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge2013
- Author(s)
  Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Implementation of High-k Gate Dielectrics in Silicon Carbide Power MOS Devices2013
- Author(s)
  H. Watanabe
- Organizer
  2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013)
- Place of Presentation
  Seoul, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy - Material and strain engineering toward CMOS compatible group-IV photonics -2013
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy -Material and strain engineering toward CMOS compatible group-IV photonics-2013
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  Arlington, VA, USA
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2013
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Organizer
  The 18th Conference of Insulating Films on Semiconductors
- Place of Presentation
  Cracow, Poland
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長によって作製したGOI構造のフォトルミネッセンス測定2013
- Author(s)
  松江将博，安武裕輔，深津晋，細井卓治，志村考功，渡部平司
- Organizer
  2013年秋季第74回応用物理学関係連合講演会
- Place of Presentation
  京都府田辺市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長により作成した単結晶GOI構造の電気特性評価2012
- Author(s)
  鈴木雄一朗, 原伸平, 井卓治, 志村考功, 渡部平司
- Organizer
  第17回ゲートスタック研究会
- Place of Presentation
  三島市、静岡
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Fabrication of high-quality GOI and SGOI structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices -2012
- Author(s)
  Heiji Watanabe
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-state Science
- Place of Presentation
  Kailua-Kona, USA(招待講演)
- Year and Date
  2012-10-10
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長により作製した単結晶GOI構造の電気特性評価2012
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)
- Place of Presentation
  静岡県三島市
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Insight into Bias-temperature Instability of 4H-SiC MOS Devices with Thermally Grown SiO_2 Dielectrics2012
- Author(s)
  A. Chanthaphan, T. Kirino, Y. Uenishi, D. Ikeguchi, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  2012 MRS Spring Meeting
- Place of Presentation
  San Francisco, CA
- Year and Date
  2012-04-11
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] 急速加熱処理によるGe1-xSnx層の低温エピタキシャル成長2012
- Author(s)
  荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱処理によるGe_<1-x>Sn_x層の低温エピタキシャル成長2012
- Author(s)
  荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京都新宿区
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011
- Author(s)
  荻原伸平, 鈴木雄一朗, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Organizer
  第16回ゲートスタック研究会
- Place of Presentation
  東京
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011
- Author(s)
  Y. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  42nd IEEE Semiconductor Interface Specialists Conf.
- Place of Presentation
  Arlington, VA, USA
- Year and Date
  2011-12-01
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011
- Author(s)
  Y.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  42nd IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Year and Date
  2011-12-01
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Gate Stack Technologies for SiC Power MOSFETs2011
- Author(s)
  H.Watanabe, et al
- Organizer
  220th ECS Meeting
- Place of Presentation
  Boston, MA, USA(招待講演)
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-face and (000-1) C-face Substrates2011
- Author(s)
  H.Watanabe, et al
- Organizer
  2011 International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Cleveland, OH, USA(招待講演)
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Impact of Stacked AlON/ SiO_2 Gate Dielectrics for SiC Power Devices(Invited)2011
- Author(s)
  H. Watanabe, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoiand T. Shimura
- Organizer
  219th ECS Meeting
- Place of Presentation
  Montreal, QC, Canada
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形県山形市
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] SiC-MOS界面欠陥の評価とその改善策2011
- Author(s)
  渡部平司
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第6回個別討論会
- Place of Presentation
  京都(招待講演)
- Year and Date
  2011-07-29
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011
- Author(s)
  S. Ogiwara, Y. Suzuki, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Meeting for Future of Electron Devices, Kansai Osaka. Japan
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Impact of Stacked AlON/SiO_2 Gate Dielectrics for SiC Power Devices2011
- Author(s)
  H.Watanabe, et al
- Organizer
  219th ECS Meeting
- Place of Presentation
  Montreal, QC, Canada(招待講演)
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] High-Quality Single-Crystalline Ge-on-Insulator P-Channel MOSFETs Formed by Lateral Liquid-Phase Epitaxy2011
- Author(s)
  T.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  Fourth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形市
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011
- Author(s)
  S.Ogiwara, Y.Suzuki, C.Yoshimoto, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  2011 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Fabrication of High-quality GOI and SGOI Structures by Rapid Melt Growth Method2011
- Author(s)
  H.Watanabe, C.Yoshimoto, T.Hashimoto, S.Ogiwara, Y.Suzuki, T.Hosoi, T.Shimura
- Organizer
  Fourth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2011
- Author(s)
  H. Watanabe, C. Yoshimoto, T. Hashimoto, S. Ogiwara, T. Hosoi, and T. Shimura
- Organizer
  The 19th Int. Workshop on Active-Matrix Flatpanel Displays and Device
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2011-07-06
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-face and(000-1) C-face Substrates(Invited)2011
- Author(s)
  H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
- Organizer
  International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Cleveland, OH
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Gate Stack Technologies for SiC Power MOSFETs(Invited)2011
- Author(s)
  H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
- Organizer
  220th ECS Meeting
- Place of Presentation
  Boston, MA
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Impact of Interface Defect Passivation on Conduction Band Offset at SiO_2/ 4H-SiC Interface2011
- Author(s)
  T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Cleveland, OH
- Year and Date
  2011-09-15
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Energy Band Structure of Thermally Grown SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Post-oxidation Treatments2010
- Author(s)
  T. Kirino, Y. Kagei, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  41st IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, CA
- Year and Date
  2010-12-02
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010
- Author(s)
  荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Place of Presentation
  長崎市、長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Energy band structure of SiO_2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer2010
- Author(s)
  H.Watanabe, et al.
- Organizer
  The 8th European Conference on Silicon Carbide and Related Materials 2010
- Place of Presentation
  Oslo, Norway
- Year and Date
  2010-09-01
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Energy Band Structure of SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer2010
- Author(s)
  H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, and T. Shimura
- Organizer
  8th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Oslo, Norway
- Year and Date
  2010-09-01
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Reduction of Charge Trapping Sites in Al_2O_3/ SiO_2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices2010
- Author(s)
  T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
- Organizer
  8th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Oslo, Norway
- Year and Date
  2010-08-31
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2010
- Author(s)
  Heiji Watanabe, Takayoshi Shimura
- Organizer
  The 7th International workshop on Active-matrix Flatpanel Displays and Devices
- Place of Presentation
  東京都目黒区大岡山、東京工業大学(招待講演)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010
- Author(s)
  荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Place of Presentation
  長崎市、長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy2009
- Author(s)
  K. Kozono, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, Y. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Material
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces2009
- Author(s)
  Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Impact of plasma nitridation of physical and electrical properties of ultrathin thermal oxides on Ge(100)2009
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  MRS Fall Meeting, A7. 2
- Place of Presentation
  Boston, USA
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  MRS fall meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] New insights into flatband voltage shift and minority carrier generation in GeO_2/Ge MOS devices2009
- Author(s)
  T. Hosoi, M. Saito, I. Hideshima, G. Okamoto, K. Kutsuki, T. Shimura, S. Ogawa, T. Yamamoto, H. Watanabe
- Organizer
  40^<th> IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] プラズマ窒化技術とAlON/SiO_2積層絶縁膜によるSiC-MOSデバイスの高機能化 (招待講演), SiC及び関連ワイドギャップ半導体研究会2009
- Author(s)
  渡部平司
- Organizer
  第18回講演会
- Place of Presentation
  神戸
- Year and Date
  2009-12-18
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Advanced gate stack technology for SiC-MOS power devices2009
- Author(s)
  H. Watanabe
- Organizer
  2^<nd> International Symposium on Atomiscally Controlled Fabrication Technology
- Place of Presentation
  Osaka
- Year and Date
  2009-11-26
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] プラズマ窒化技術とALON/SiO2積層絶縁膜によるSiC-MOSデバイスの高機能化(招待講演)2009
- Author(s)
  渡部平司, 他
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸国際会議場
- Year and Date
  2009-12-18
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Fabrication of single-crystal local germanium-on-insulator structures by lateral liquid-phase epitaxy2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  MRS Fall Meeting, A5. 1
- Place of Presentation
  Boston
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO_2/SiC interfaces2008
- Author(s)
  H. Watanabe
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] 金属電極とハフニウム系高誘電率ゲート絶縁膜界面の実効仕事関数変調機構2008
- Author(s)
  渡部平司, 他
- Organizer
  電子情報通信学会技術研究報告SDM研究会(シリコン材料・デバイス)
- Place of Presentation
  京都市西京区(京都大学)(招待講演)
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] Improved electrical properties of Ge_3N_4 interfaces by fluorine ion implantation2008
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Fundamental aspects of effective work function instability of metal/Hf-based high-k gate stacks2008
- Author(s)
  H. Watanabe, et.al.
- Organizer
  214^<th> ECS Meeting
- Place of Presentation
  米国ハワイ(Invited)
- Year and Date
  2008-10-13
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] 真空一貫界面固相反応法による高品質Metal/High-kゲートスタック作製技術2008
- Author(s)
  渡部平司
- Organizer
  第49回真空に関する連合講演会
- Place of Presentation
  島根県松江市(くにびきメッセ)(招待講演)
- Year and Date
  2008-10-29
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO_2/ SiC Interfaces2008
- Author(s)
  H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, N. Nakano, and T. Nakamura
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Impact of a Treatment Combining Nitrogen Plasma Exposure And Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces2008
- Author(s)
  H. Watanabe, et al.
- Organizer
  7th European Conference on Si 1 icon Carbideand Related Materials
- Place of Presentation
  バルセロナ(スペイン)
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] AlON/ SiO_2 Stacked Gate Dielectrics for 4H-SiC MIS Devices2008
- Author(s)
  T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
- Organizer
  7th European Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Barcelona, Spain
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Origins of interface dipoles at p-metal/Hf-based high-k gate stacks2008
- Author(s)
  H. Watanabe, et.al.
- Organizer
  International Conference on Quantum Simulators and Design
- Place of Presentation
  東京都江東区(未来科学館)
- Year and Date
  2008-06-01
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] 金属電極とHf系高誘電率絶縁膜界面の実効仕事関数変調機構2008
- Author(s)
  渡部平司, 他
- Organizer
  半導体・集積回路技術第72回シンポジウム
- Place of Presentation
  東京都小金井市(東京農工大)(招待講演)
- Year and Date
  2008-07-11
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] Application of synchrotron x-ray diffraction methods to gate stacks of advanced MOS devices2008
- Author(s)
  Invited: T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe
- Organizer
  213^<th> ECS Meeting
- Place of Presentation
  Phoenix, AZ, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Electric properties of 4H-SiC MIS devices with AlON/SiO_2 stacked gate dielectrics2007
- Author(s)
  Y. Watanabe, et. al.
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka, Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-19676001
[Presentation] Thermal and humidity stability of Ge_3N_4 thin layers fabricated by high-density plasma nitridation2007
- Author(s)
  K. Kutsuki, G. Okamoto, T. Hosoi, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  Maryland, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Interface engineering by PVD-based in -situ fabrication method for advanced metal/high-k gate stacks2007
- Author(s)
  H, Watanabe, et. al.
- Organizer
  211th ECS Meeting
- Place of Presentation
  米国シカゴ
- Year and Date
  2007-05-07
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] 真空一貫固相反応PvD成膜によるTiN/HfSiON pMISFETの特性改善2007
- Author(s)
  渡部平司, 他
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] Electric properties of 4H-SiC MIS devices with AlON/SiO2 stacked gate dielectrics2007
- Author(s)
  Y. Watanabe, et. al.
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka, Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-19360019
[Presentation] 金属/High-k界面のプロセス依存性の評価と理解2007
- Author(s)
  渡部平司, 他
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PROJECT-19019010
[Presentation] 先進パワーデバイスにおける新規ゲート絶縁膜開発
- Author(s)
  渡部平司, 細井卓治
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy
- Author(s)
  T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
- Organizer
  The 45th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太、アランフルカン、樋口直樹、チャンタパンアタウット、細井卓治、志村考功、渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センターウインクあいち（愛知県名古屋市）
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy
- Author(s)
  T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
- Organizer
  IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices
- Author(s)
  A. Chanthaphan, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  応用物理学会　薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会」
- Place of Presentation
  東レ研修センター（静岡県三島市）
- Year and Date
  2015-01-29 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太、アランフルカン、樋口直樹、チャンタパンアタウット、細井卓治、志村考功、渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センターウインクあいち（愛知県名古屋市）
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] カソードルミネッセンス法による熱酸化 SiO2 /SiC 構造の評価
- Author(s)
  福島悠太，Furkan Alan，樋口直樹，Atthawut Chanthaphan，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太, チャンタパンアタウット, 永井大介, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学会学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] NOアニールを施したSiC MOSデバイスのフラットバンド電圧安定性
- Author(s)
  勝義仁, 細井卓治, 南園悠一郎, 木本恒暢, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長によって作製した絶縁体上GeSnワイヤのフォトルミネッセンス測定によるバンドギャップ変調技術
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 松江将博, 細井卓治, 志村孝功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2015-01-29 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices
- Author(s)
  チャンタパンアタウット, 中野佑紀, 中村孝, 細井卓治, 志村考功, 渡部平司
- Organizer
  「ゲートスタック研究会　―材料・プロセス・評価の物理―」(第２０回研究会)
- Place of Presentation
  東レ研修センター、三島市
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太, チャンタパンアタウット, 永井大介, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] 高温熱酸化による4H-SiC MOSキャパシタの電気特性改善
- Author(s)
  鄭彦宏、Chanthaphan Atthawut、許恒宇、楊謙、劉新宇、趙艷黎、李誠譫、細井卓治、志村考功、渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センターウインクあいち（愛知県名古屋市）
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-14F04359
[Presentation] Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing
- Author(s)
  細井卓治, 南園悠一郎, 木本恒暢, 吉越章隆, 寺岡有殿, 志村考功, 渡部平司
- Organizer
  10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価
- Author(s)
  梶村恵子，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices
- Author(s)
  H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Year and Date
  2014-06-19 – 2014-06-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 4H-SiC(0001)面の熱酸化における酸化種と酸化速度の関係
- Author(s)
  永井大介, 福島悠太, 勝義仁, 細井卓治, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センター、名古屋市
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics
- Author(s)
  チャンタパン　アタウット、中野佑紀、中村孝、細井卓治、志村考功、渡部平司
- Organizer
  第74回応用物理学関係連合講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価
- Author(s)
  梶村恵子，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性
- Author(s)
  冨永幸平，梶村恵子，天本隆史，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性
- Author(s)
  冨永幸平，梶村恵子，天本隆史，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Sub-1-nm EOT Schottky Source/Drain Germanium CMOS Technology with Low-temperature Self-aligned NiGe/Ge Junctions
- Author(s)
  T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 4H-SiC(0001)面のウェット酸化における水分子の役割
- Author(s)
  永井大介, 細井卓治, 志村考功, 渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC
- Author(s)
  細井　卓治、上西　悠介、チャンタパン　アタウット、池口　大輔、中野　佑紀、中村　孝、志村　考功、渡部　平司
- Organizer
  The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013)
- Place of Presentation
  Las Vegas, NV, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] カソードルミネッセンス法による熱酸化 SiO2 /SiC 構造の評価
- Author(s)
  福島悠太，Furkan Alan，樋口直樹，Atthawut Chanthaphan，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] AlON/SiO2積層ゲート絶縁膜によるSiC MOSデバイスのBTI特性改善
- Author(s)
  チャンタパン　アタウット、中野佑紀、中村孝、細井卓治、志村考功、渡部平司
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology
- Author(s)
  H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-25246028

1. SHIMURA Takayoshi (90252600)

# of Collaborated Projects: 11 results

# of Collaborated Products: 106 results
2. HOSOI Takuji (90452466)

# of Collaborated Projects: 8 results

# of Collaborated Products: 103 results
3. CHANTHAPHAN ATTHAWUT

# of Collaborated Projects: 2 results

# of Collaborated Products: 60 results
4. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. OGAWA Masaki (10377773)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. SAKAI Akira (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KONDO Hiroki (50345930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. YASUTAKE Kiyoshi (80166503)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
11. OHMI Hiromasa (00335382)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
12. Kuniyoshi Mizuki (40897443)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
13. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 小林拓真 (20827711)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. YASUTAKE Yuhsuke

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
16. 吉越章隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
17. 寺岡有殿

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Watanabe Heiji 渡部 平司

WATANABE Heiji 渡部 平司

WATABABE Heiji 渡部 平司

Research Projects

Research Products

Co-Researchers

Deep Insights into Heterointerface Engineering in Silicon Carbide based DevicesPrincipal Investigator

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Reconsideration of interface science and engineering of silicon carbide-based metal-oxide-semiconductor interfacePrincipal Investigator

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Creation of high performance and highly reliable GaN MOS devices based on interface engineeringPrincipal Investigator

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Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivationPrincipal Investigator

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先端ゲートスタックプロセスによる高信頼性ＳｉＣ－ＭＯＳＦＥＴの開発Principal Investigator

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Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic propertiesPrincipal Investigator

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Improvement of SiO2/SiC interface quality by beam induced interface reactionsPrincipal Investigator

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原子制御プロセスによる超薄MOS構造の作製とその伝導特性および界面物性の解析Principal Investigator

Principal Investigator

Watanabe Heiji 渡部平司

WATANABE Heiji 渡部平司

WATABABE Heiji 渡部平司

[Book] 「システムオンパネルをめざした低温ポリシリコン薄膜トランジスタの開発」第2編第6章"Ge核を用いたSi薄膜の低温結晶化技術"(監修浦岡行治)2007

[Book] システムオンパネルをめざした低温ポリシリコン薄膜トランジスタの開発(第2編第6章 Ge核を用いたSi薄膜の低温結晶化技術)(監修浦岡行治)2007