AKASAKA Tetsuya 赤坂哲也

… Alternative Names

赤坂哲也アカサカテツヤ

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Researcher Number	90393735
Other IDs
Affiliation (Current)	2025: 明星大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2022 – 2023: 明星大学, 理工学部, 教授 2016 – 2018: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員 2016: 日本電信電話株式会社, NTT物性科学基礎研究所・機能物質科学研究部, 主任研究員 2012: 日本電信電話株式会社ＮＴＴ物性科学基礎研究所, 機能物質科学研究部, 主任研究員 2006 – 2012: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Crystal engineering / Applied materials science/Crystal engineering
Keywords	Principal Investigator 窒化物半導体 / 結晶成長 / 量子井戸 / 半導体物性 / エピタキシャル成長 / 常圧 / 液相成長 / 表面形状 / エピタキシ / 薄膜 … More / 常圧液相成長 / 窒化ガリウム / 電子デバイス / 光デバイス / 超格子 / 表面・界面物性 / 光物性 / 無転位 / ステップフリー … More Except Principal Investigator 不活性化 / リーク電流 / 転位 / MBE / 極微領域評価 / 混晶組成 / 窒化物半導体 / InGaN / InN / エピタキシャル成長 / 光物性 / 半導体物性 / 結晶成長 / 半導体 Less

liquid phase epitaxy of nitride semiconductor thin films under an atmospheric pressure nitrogen ambiencePrincipal Investigator
- Principal Investigator
  
  赤坂哲也
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Meisei University
Novel molecular layer epitaxy on a step-free III-nitride surfacePrincipal Investigator
- Principal Investigator
  
  Akasaka Tetsuya
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  NTT Basic Research Laboratories
Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method
- Principal Investigator
  
  NANISHI YASUSHI
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Ritsumeikan University
Research on step-free heterostructures of nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  AKASAKA Tetsuya
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories
Research on hexagonal boron nitride semiconductors
- Principal Investigator
  
  KOBAYASHI Yasuyuki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories

All 2023 2022 2018 2017 2016 2013 2012 2011 2010 2009 2008 2007

All Journal Article Presentation

[Journal Article] Landau level quantization with gate tuning in an AlN/GaN single heterostructure2018
- Author(s)
  Suzuki Kyoichi、Akasaka Tetsuya
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 111001-111001
- DOI
  10.7567/jjap.57.111001
- NAID
  210000149750
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03862
[Journal Article] N-face (000-1) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy2018
- Author(s)
  Akasaka Tetsuya、Schied Monika、Kumakura Kazuhide
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 8 Pages: 081001-081001
- DOI
  10.7567/apex.11.081001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03862
[Journal Article] Surface supersaturation in flow-rate modulation epitaxy of GaN2017
- Author(s)
  T. Akasaka, C. H. Lin, H. Yamamoto, and K. Kumakura
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 印刷中 Pages: 821-826
- DOI
  10.1016/j.jcrysgro.2016.11.107
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H03862
[Journal Article] Nucleus and Spiral Growth of N-face GaN(000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  C. H. Lin, T. Akasaka, and H. Yamamoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 3 Pages: 35503-35503
- DOI
  10.7567/apex.6.035503
- NAID
  10031159850
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  C. H. Lin、T. Akasaka、H. Yamamoto
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 6 Pages: 35503-35503
- NAID
  10031159850
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface2012
- Author(s)
  T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
- Journal Title
  
  Advanced Materials
  
  Volume: 24 Issue: 31 Pages: 4296-4300
- DOI
  10.1002/adma.201200871
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface、Advanced.2012
- Author(s)
  T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
- Journal Title
  
  Materials
  
  Volume: Vol. 24 Pages: 4296-4300
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: Vol.38 No.4 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之赤坂哲也、小林康之、嘉数誠
- Journal Title
  
  日本結晶成長学会論文誌
  
  Volume: Vol. 38 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 3 Pages: 75602-75602
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010
- Author(s)
  小林康之、C.L. Tsai、赤坂哲也
- Journal Title
  
  表面科学 31巻
  
  Pages: 99-105
- NAID
  10026319493
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010
- Author(s)
  小林康之、蔡俊瓏、赤坂哲也
- Journal Title
  
  表面科学 31
  
  Pages: 99-105
- NAID
  10026319493
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol. 97 Pages: 141902-141902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Optical band gap of h-BN epitaxial film grown on c-plane sapphire substrate2010
- Author(s)
  Y.Kobayashi, C-L.Tsai, T.Akasaka
- Journal Title
  
  Physica Status Solidi(c) (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Optical band gap of h-BN epitaxial film grown on c-plane sapphire substrate2010
- Author(s)
  Y. Kobayashi、C.L. Tsai、T. Akasaka
- Journal Title
  
  Physica Status Solidi(c) (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate2009
- Author(s)
  C.L. Tsai、T. Akasaka、Y. Kobayashi
- Journal Title
  
  Journal of Crystal Growth Vol.311
  
  Pages: 3054-3057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexogonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on(0001)sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Journal Title
  
  Journal of crystal growth Vol.310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka, T. Makimoto
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized <6H-SiC> Substrates by Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  Y.Kobayashi, H.Hibino, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 2554-2557
- NAID
  210000062433
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers fro growth of high quality GaN on sapphire2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 320-324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire2007
- Author(s)
  T.Akasaka, Y.Kobayashi, T.Makimoto
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 320-324
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi、T. Nakamura、T. Akasaka、T. Makimoto、N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN(1120)and(1100)films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y.Kobayashi, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Physica Status Solidi (b) 244
  
  Pages: 1789-1792
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN (1120) and (1100) films grown on SiC substrate2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111)grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized 6H-SiC Substrates by Metalorganic Vapor phase Epitaxy2007
- Author(s)
  Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Japanese Jounal of Applied Physics Vol.46
  
  Pages: 2554-2557
- NAID
  210000062433
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Liquid Phase Epitaxy of GaN Films on Sapphire Substrates under an Atmospheric Pressure Nitrogen Ambience2023
- Author(s)
  M. Katsuumi and T. Akasaka
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04954
[Presentation] Liquid Phase Epitaxy of GaN Films under an Atmospheric Pressure Nitrogen Ambience2022
- Author(s)
  T. Akasaka and M. Katsuumi
- Organizer
  The 12th Asia Pacific Physics Conference (APPC 12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04954
[Presentation] AlN/GaN単一ヘテロ接合の量子ホール効果とゲート制御2018
- Author(s)
  鈴木恭一、赤坂哲也
- Organizer
  第７９回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] One-or two-monolayer-thick InN single quantum wells fabricated on step-free GaN surfaces by MOVPE2018
- Author(s)
  Akasaka Tetsuya、Berry Andy、Lin Chia-Hung、Yamamoto Hideki
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] 窒素極性InN(000-1)ダブルヘテロ構造のMOVPE成長2018
- Author(s)
  赤坂哲也，Monika Schied，熊倉一英
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] N-face (000-1) GaN/InN/GaN double heterostructures emitting near-IR photoluminescence grown by metalorganic vapor phase epitaxy2018
- Author(s)
  Akasaka Tetsuya、Schied Monika、Kumakura Kazuhide
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] N-Face InN/GaN (000-1) Double Heterostructures Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  T. Akasaka, M. Schied, H. Yamamoto and K. Kumakura
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Orlando (USA)
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] 窒素極性InN(000-1)薄膜結晶性のMOVPE成長温度依存性2016
- Author(s)
  赤坂哲也，Monika Schied，熊倉一英
- Organizer
  2016年秋季第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] Atomic Level C-AFM Characterization of GaN Grown Under Spiral Mode2016
- Author(s)
  K. Komura, T. Araki, Y. Nanishi, T. Akasaka
- Organizer
  International Workshop on Nitride Semiconductor 2016 (IWN2016)
- Place of Presentation
  Orlando, Florida (USA)
- Year and Date
  2016-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600090
[Presentation] Surface supersaturation in flow-rate modulation epitaxy of GaN2016
- Author(s)
  T. Akasaka, C. H. Lin, Y. Yamamoto, and K. Kumakura
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03862
[Presentation] 螺旋成長したN 極性GaN (000-1)のらせん転位近傍のTEM 観察2013
- Author(s)
  林家弘、赤坂哲也、山本秀樹
- Organizer
  春季第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木(27p-G21-16)
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] InGaN下地層による(000-1)InGaN多層量子井戸発光効率の改善2013
- Author(s)
  林　家弘，赤坂哲也，山本秀樹
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川　神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] InGaN 下地層による(000-1)InGaN 多層量子井戸発光効率の改善2013
- Author(s)
  林家弘、赤坂哲也、山本秀樹
- Organizer
  春季第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木(27p-G21-17)
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 螺旋成長したN極性GaN (000-1)のらせん転位近傍のTEM観察2013
- Author(s)
  林　家弘，赤坂哲也，山本秀樹
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川　神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free界面を有するInN/GaN単一量子井戸からの紫色狭線発光2012
- Author(s)
  赤坂哲也，後藤秀樹，小林康之，山本秀樹
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛　松山大学
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  C. H. Lin、T. Akasaka、H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  札幌
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  C. H. Lin, T. Akasaka, and H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface2012
- Author(s)
  T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  札幌(招待講演)
- Year and Date
  2012-10-17
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate2012
- Author(s)
  T. Akasaka、Y. Kobayashi、C.-H. Lin、H. Yamamoto
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  仙台(招待講演)
- Year and Date
  2012-10-23
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface2012
- Author(s)
  T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate2012
- Author(s)
  T. Akasaka, Y. Kobayashi, C. H. Lin, and H. Yamamoto
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  林　家弘，赤坂哲也，山本秀樹
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛　松山大学
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  林家弘、赤坂哲也、山本秀樹
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山(12p-H9-5)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free 界面を有するInN/GaN 単一量子井戸からの紫色狭線発光2012
- Author(s)
  赤坂哲也、後藤秀樹、小林康之、山本秀樹
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山(13a-H9-9)
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface2012
- Author(s)
  T. Akasaka, A. Berry, Y. Kobayashi, and H. Yamamoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface2012
- Author(s)
  T. Akasaka、A. Berry、Y. Kobayashi、H. Yamamoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  京都
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770 oC by controlling surface supersaturation2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  福岡(招待講演IN3)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770C by controlling surface supersaturation2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECCカンファレンスセンター,(グラスゴー,UK)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] GaN のMOVPE成長における表面過飽和度に及ぼすキャリアガスの影響2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木(26a-BY-5)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE 選択成長によるGaN ステップフリー面上へのInN核生成2011
- Author(s)
  赤坂哲也、小林康之
- Organizer
  2011 年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形(31p-ZE-15)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  ウインクあいち(名古屋市)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE選択成長によるGaNステップフリー面上へのInN核生成2011
- Author(s)
  赤坂哲也, 小林康之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(春日市)(招待講演)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vaporphase epitaxy(Invited)2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides
- Place of Presentation
  コラム(モンペリエ,フランス)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi Makoto Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides (ISGN-3)
- Place of Presentation
  モンペリエ(フランス)(招待講演)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 窒化ガリウムのステップフリー面の作製と成長機構2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  真空・表面科学合同講演会
- Place of Presentation
  大阪(4Ca-06)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPEにおけるGaNスパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE におけるGaN スパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎(15p-C-6)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM2010)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Near Band-Gap Luminescnece of Hexagonal Boron Nitride Grown on Ni(111) Substrtae by Plasma-assisted MBE2009
- Author(s)
  C.L. Tsai、Y. Kobayashi、T. Akasaka、M. Kasu
- Organizer
  Electronic Materials Conference
- Place of Presentation
  アメリカ、ペンシルベニア
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Near Band-Gap Luminescence of Hexagonal Boron Nitride Grown on Ni(111)Substrate by Plasma-assisted MBE2009
- Author(s)
  C.L.Tsai, Y.Kobayashi, T.Akasaka, M.Kasu
- Organizer
  Electronic Materials Conference
- Place of Presentation
  アメリカ、ペンシルベニア州
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical Band Gap of Hexagonal BN Epitaxial Film Grown on c-Plane Sapphire Substrate2009
- Author(s)
  Y.Kobayashi, C.L.Tsai, T.Akasaka
- Organizer
  8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN Epitaxial Growth by Flow-Rate Modulation Epitaxy on MBE-Grown h-BN Buffer Layer2009
- Author(s)
  Y.Kobayashi, C.L.Tsai, T.Akasaka
- Organizer
  8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical Band Gap of Hexagonal BN Epitaxial Film Grown on c-Plane Sapphire Substrate2009
- Author(s)
  Y. Kobayahi、T. Akasaka
- Organizer
  2009 Asia-Core Workshop on Wide Bandgap Semiconductors、招待講演
- Place of Presentation
  韓国、慶州
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical Band Gap of Hexagonal BN Epitaxil Film Grown on c-Plane Sapphire Substrate2009
- Author(s)
  Y. Kobayahi、C.L. Tsai、T. Akasaka
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial Growth by Flow-Rate Modulation Epitaxy on MBE-Grown h-BN Buffer Layer2009
- Author(s)
  Y. Kobayahi、C.L. Tsai、T. Akasaka
- Organizer
  8th International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical band gap of hexagonal boron nitride epitaxial film grown on c-plane sapphire substrate2009
- Author(s)
  Y.Kobayashi, T.Akasaka
- Organizer
  2009 Asia-Core Workshop on Wide Bandgap Semiconductors
- Place of Presentation
  韓国、慶州
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on(0001)sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14^<th> International conference on metal organic vapor phase epitaxy
- Place of Presentation
  France
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrtae2008
- Author(s)
  C.L. Tsai、T. Akasaka、Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  日本、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni (111) substrate2008
- Author(s)
  C. L. Tsai, Y. Kobayashi, T. Akasaka, M. Kasu
- Organizer
  Second International Symposium on Growth of III-Nitirides
- Place of Presentation
  日本、静岡、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Boron Nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy、招待講演
- Place of Presentation
  フランス、メス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス市
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Boron Nitiride grown by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス市
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111)substrate2008
- Author(s)
  C. L.Tsai, Y. Kobayashi, T. Akasaka, M. Kasu
- Organizer
  2^<nd> international symposium on growth of III-nitrides
- Place of Presentation
  日本
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al(B, Ga)N(1120)films grown on SiC(1120)2008
- Author(s)
  T. Akasaka, Y. Kobayashi
- Organizer
  2^<nd> international symposium on growth of III-nitrides
- Place of Presentation
  日本
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al (B, Ga) N (11-20) films grown on SiC (11-20)2008
- Author(s)
  T. Akasaka, Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitirides
- Place of Presentation
  日本、静岡、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al(B, Ga)N (11-20) films grown on SiC (11-20)2008
- Author(s)
  T. Akasaka、Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  日本、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi、T. Miyamoto、T. Akasaka、T. Makimoto、N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ、ソルトレイク
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Nonpolar AlBN (1120) and (1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Organizer
  7th International Conference of Nitride Semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi, M. Miyamoto, T. Akasaka, T. Makimoto, N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ,ソルトレイクシティ
- Data Source
  KAKENHI-PROJECT-18206004

1. GOTOH Hideki (10393795)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
2. KOBAYASHI Yasuyuki (90393727)

# of Collaborated Projects: 2 results

# of Collaborated Products: 72 results
3. MAKIMOTO Toshiki (50374070)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
4. NISHIKAWA Atsushi (60417095)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NAKANO Hidetoshi (90393793)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. TAWARA Takehiko (40393798)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SANADA Haruki (50417094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KASU Makoto (50393731)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
9. NANISHI YASUSHI (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. SUDA Jun (00293887)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 熊倉一英 (00393736)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
13. 西中淳一 (40774625)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 鈴木恭一 (20393770)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
15. 荒木努 (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

AKASAKA Tetsuya 赤坂 哲也

赤坂 哲也 アカサカ テツヤ

Research Projects

Research Products

Co-Researchers

liquid phase epitaxy of nitride semiconductor thin films under an atmospheric pressure nitrogen ambiencePrincipal Investigator

Principal Investigator

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Review Section

Research Institution

Novel molecular layer epitaxy on a step-free III-nitride surfacePrincipal Investigator

Principal Investigator

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Research Institution

Dislocation passivation in InGaN by intentinally using immiscible nature during MBE growth by DERI method

Principal Investigator

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Research on step-free heterostructures of nitride semiconductorsPrincipal Investigator

Principal Investigator

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Research Institution

Research on hexagonal boron nitride semiconductors

Principal Investigator

Project Period (FY)

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[Journal Article] Landau level quantization with gate tuning in an AlN/GaN single heterostructure2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] N-face (000-1) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Surface supersaturation in flow-rate modulation epitaxy of GaN2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Nucleus and Spiral Growth of N-face GaN(000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Nucleus and Spiral Growth of N-face GaN (000-1) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy2013

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface、Advanced.2012

Author(s)

Journal Title

Data Source

[Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成2011

Author(s)

Journal Title

Data Source

[Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成2011

Author(s)

Journal Title

Data Source

[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010

AKASAKA Tetsuya 赤坂哲也

赤坂哲也アカサカテツヤ