SUEMITSU Tetsuya 末光哲也

… Alternative Names

末光哲也スエミツテツヤ

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Researcher Number	90447186
Other IDs
Affiliation (Current)	2025: 東北大学, 未来科学技術共同研究センター, 特任教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 東北大学, 未来科学技術共同研究センター, 特任教授 2017 – 2020: 東北大学, 国際集積エレクトロニクス研究開発センター, 教授 2010 – 2016: 東北大学, 電気通信研究所, 准教授 2007: 東北大学, 電気通信研究所, 准教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Engineering / Science and Engineering / Electron device/Electronic equipment
Keywords	Principal Investigator 窒化物半導体 / トランジスタ / 電界効果トランジスタ / 窒素極性 / 高電子移動度トランジスタ / マイクロ波・ミリ波 / 進行波増幅 / テラヘルツ / 半導体 / 基板接合 … More / HEMT / 半導体物性 / マイクロ・ナノデバイス / デバイス設計・製造プロセス / 結晶成長 / 先端機能デバイス / 電子デバイス・機器 / 窒素極性窒化物 / SCAM基板 / パワーデバイス / GaN / 窒化物トランジスタ … More Except Principal Investigator テラヘルツ / プラズモン / 光学励起 / テラへルツ / ボトムアップ / 誘導放出 / ポラリトン / 電流注入 / レーザー / グラフェン / 集積回路 / 回路 / 伝搬モード / 赤外材料・素子 / 電磁波 / テラヘルツ/赤外材料・素子 / 高速伝送回路設計 / 電子デバイス / 電磁波伝搬モード型回路 / 分散制御 / 低次元プラズモン Less

窒化物半導体における選択極性反転技術の構築とn型p型領域同時形成への応用の研究Principal Investigator
- Principal Investigator
  
  末光哲也
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tohoku University
Study on traveling wave amplification in semiconductorsPrincipal Investigator
- Principal Investigator
  
  末光哲也
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tohoku University
Study on N-polar GaN MIS-HEMTs for power devicesPrincipal Investigator
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tohoku University
Study on nitrogen-polar InGaAs-channel high electron mobility transistorsPrincipal Investigator
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Study on GaN-based vertical transistors using ScAlMgO4 substratesPrincipal Investigator
- Principal Investigator
  
  Suemitsu Tetsuya
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Detail evaluation of electron velocity in GaN HEMTsPrincipal Investigator
- Principal Investigator
  
  SUEMITSU Tetsuya
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Creation of graphene terahertz lasers
- Principal Investigator
  
  OTSUJI Taiichi
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion
- Principal Investigator
  
  OTSUJI Taiichi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University

[Book] グラフェンが拓く材料の新領域2012
- Author(s)
  末光眞希, 第一章第4節エピタキシャルグラフェン法
- Total Pages
  233
- Publisher
  エヌ・ティー・エス、東京
- Data Source
  KAKENHI-PROJECT-23000008
[Book] グラフェンの最先端技術と拡がる応用 ―グラフェンの材料科学、成長・合成技術、各種デバイス応用―2012
- Author(s)
  末光哲也, 第４章第１節"グラフェンチャネルトランジスタ"
- Total Pages
  242
- Publisher
  フロンティア出版, 東京
- Data Source
  KAKENHI-PROJECT-23000008
[Book] グラフェンの最先端技術と拡がる応用2012
- Author(s)
  末光眞希, 第3章グラフェンの合成技術と応用展開　６．SiC基板上のエピタキシャルグラフェン成長
- Total Pages
  242
- Publisher
  フロンティア出版、東京
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors2021
- Author(s)
  Prasertsuk Kiattiwut、Suemitsu Tetsuya、Matsuoka Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SA Pages: SA1006-SA1006
- DOI
  10.35848/1347-4065/ac2214
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H02165
[Journal Article] Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness2020
- Author(s)
  Suemitsu Tetsuya、Makabe Isao
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900528-1900528
- DOI
  10.1002/pssb.201900528
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H02165
[Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 015503-015503
- DOI
  10.7567/apex.11.015503
- NAID
  210000136090
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074, KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16H03857, KAKENHI-PROJECT-16H04341
[Journal Article] Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse2017
- Author(s)
  Hemmi Fuyumi、Thomas Cedric、Lai Yi-Chun、Higo Akio、Watamura Yoh、Samukawa Seiji、Otsuji Taiichi、Suemitsu Tetsuya
- Journal Title
  
  Solid-State Electronics
  
  Volume: 137 Pages: 1-5
- DOI
  10.1016/j.sse.2017.07.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13963
[Journal Article] Neutral beam etching for device isolation in AlGaN/GaN HEMTs2017
- Author(s)
  F. Hemmi, C. Thomas, Y. C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, T. Suemitsu
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 214 Issue: 3
- DOI
  10.1002/pssa.201600617
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Journal Article] A new process approach for slant field plates in GaN-based high-electron-mobility transistors2016
- Author(s)
  T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, and T. Palacios
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 1S Pages: 01AD02-01AD02
- DOI
  10.7567/jjap.55.01ad02
- NAID
  210000145958
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016
- Author(s)
  Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 印刷中 Issue: 5 Pages: 1125-1129
- DOI
  10.1002/pssa.201532675
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT2015
- Author(s)
  T. Watanabe, T. Kawasaki, A. Satou, S.A. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, W. Knap, H. Minamide, H. Ito, Y.M. Meziani, V.V. Popov, and T. Otsuji
- Journal Title
  
  Proc. SPIE
  
  Volume: 9362 Pages: 93620F-93620F
- DOI
  10.1117/12.2079184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] SiNゲートスタックによる高キャリア移動度グラフェンチャネルFET2015
- Author(s)
  玉虫元, 菅原健太, Mastura binti Hussin, 末光哲也, 須藤亮太, 吹留博一, 末光眞希, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Interfacial charge states in graphene on SiC studied by noncontact scanning nonlinear dielectric potentiometry2015
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, and Yasuo Cho
- Journal Title
  
  Physical Review Letters
  
  Volume: 114 Issue: 22 Pages: 226103-226103
- DOI
  10.1103/physrevlett.114.226103
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K04673, KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23226008
[Journal Article] Correlation between the residual stress in 3C-SiC/Si epifilm and the quality of epitaxial graphene formed thereon2015
- Author(s)
  R Bantaculo, H Fukidome and M Suemitsu
- Journal Title
  
  IOP Conf. Series: Materials Science and Engineering
  
  Volume: 79 Pages: 012004-012004
- DOI
  10.1088/1757-899x/79/1/012004
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Si基板上エピタキシャルグラフェンのNi援用低温形成とリアルタイム/角度分解光電子分光によるグラフェン化機構評価2015
- Author(s)
  長谷川美佳、須藤亮太、菅原健太、三本菅正太、原本直樹、寺岡有殿、吉越章隆、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band2015
- Author(s)
  T. Kawasaki, K. Sugawara, A. Dobroiu, T. Eto, Y. Kurita, K. Kojima, Y. Yabe, H. Sugiyama, T. Watanabe, T. Suemitsu, V. Ryzhii, K. Iwatsuki, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, K. Kawahara, H. Ago, and T. Otsuji
- Journal Title
  
  Solid State Electron
  
  Volume: 103 Pages: 216-221
- DOI
  10.1016/j.sse.2014.07.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 非対称二重格子ゲートHEMTによるテラヘルツ波検出の周波数特性2015
- Author(s)
  佐藤昭, Stephane Boubanga Tombet, 渡辺隆之, 川﨑鉄哉, 糟谷文月, 末光哲也, Denis V. Fateev, Vyacheslav V. Popov, 南出泰亜, 伊藤弘昌, Dominique Coquillat, Wojciech Knap, Guillaume Ducournau, Yahya Meziani, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェンチャネルFETのサブテラヘルツ帯ミキサ応用2015
- Author(s)
  菅原健太, 川﨑鉄哉, Binti Hussin Mastura, 玉虫元, 末光眞希, 吹留博一, 可児淳一, 寺田純, 桑野茂, 岩月勝美, 末光哲也, 尾辻泰一
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3X-SiC/Si2015
- Author(s)
  Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, and Maki Suemitsu
- Journal Title
  
  Nanoscale Research Letter
  
  Volume: 10 Issue: 1 Pages: 421-426
- DOI
  10.1186/s11671-015-1131-9
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420289, KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor2015
- Author(s)
  Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 108-114
- DOI
  10.4028/www.scientific.net/msf.821-823.108
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] InP and GaN high electron mobility transistors for millimeter-wave applications2015
- Author(s)
  Tetsuya Suemitsu
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 12 Issue: 13 Pages: 20152005-20152005
- DOI
  10.1587/elex.12.20152005
- NAID
  130005087552
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13963
[Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015
- Author(s)
  須藤亮太、舘野泰範、吹留博一、末光眞希
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] High carrier mobility graphene-channel FET using SiN gate stack2015
- Author(s)
  G. Tamamushi, K. Sugawara, M. B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, and T. Otsuji
- Journal Title
  
  The 42nd International Symposium on Compound Semiconductors Proc.
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 接触抵抗改善によるグラフェンFETの高性能化2015
- Author(s)
  小岩匡, 岡謙吾, 末光哲也, 尾辻泰一, 内野俊
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] InAlN/GaN HEMTsにおける傾斜型フィールドプレートによるドレイン空乏領域長への影響2015
- Author(s)
  安川奈那, 畠山信也, 吉田智洋, 尾辻泰一, 末光哲也
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015
- Author(s)
  Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 67 Pages: 51-53
- DOI
  10.1016/j.diamond.2016.02.020
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] SiCN鋳型プロセスを用いた傾斜フィールドプレート構造を持つInGaAs系HEMTの作製とその特性2015
- Author(s)
  吉田智洋, 畠山信也, 安川奈那, 尾辻泰一, 末光哲也
- Journal Title
  
  第62回応用物理学会春季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Geometrical dependence of ultrahigh responsivity and its broadband characteristics of InP-based asymmetric dual-grating-gate high-electron-mobility transistors2015
- Author(s)
  A. Satou, T. Kawasaki, S. Hatakeyama, S. Boubanga Tombet, T. Suemitsu, G. Ducournau, D. Coquillat, D.V. Fateev, V.V. Popov, Y.M. Meziahi, and T. Otsuii
- Journal Title
  
  OTST : Int. Conf. on Optical Terahertz Science and Technology Dig
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  EXMATEC 2014 Book of Abstracts
  
  Volume: 1 Pages: 197-198
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] RF characteristics of AlGaN/GaN HEMTs with slant field plates2014
- Author(s)
  Shinya Hatakeyama, Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  ISCS : the 41st Int. Symp. On Compound Semiconductors Dig
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014
- Author(s)
  Sai Jiao, Yuya Murakami, Hiroyuki Nagasawa, Hirokazau Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 806 Pages: 89-93
- DOI
  10.4028/www.scientific.net/msf.806.89
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-23000008
[Journal Article] Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  ECOSS30 : the 30th European Conference on Surface Science Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene on Silicon Substrates : Tailoring the Properties through Crystal Faces2014
- Author(s)
  M. Suemitsu
- Journal Title
  
  2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book
  
  Volume: 1 Pages: 17-17
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Improving Graphene Field-Effect Transistor Performance by Self-Aligned Source/Drain Process with Aluminum Sacrificial Layer2014
- Author(s)
  M.B. Hussin, K. Sugawara, T. Suemitsu, and T. Otsuji
- Journal Title
  
  RPGR 2014 : the 6th Int. Conf. on Recent Progress on Graphene Research Proc
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Plasmonic terahertz monochromatic coherent emission from an asymmetric chirped dual-grating-gate InP-HEMT with highly asymmetric resonant cavities2014
- Author(s)
  T. Watanabe, A. Satou, T. Suemitsu, W. Knap, V.V. Popov, V. Ryzhii, M. Shur, and T. Otsuji
- Journal Title
  
  RJUS TeraTech-2014 : The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc
  
  Volume: 1 Pages: 39-40
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] InGaAsチャネルHEMT及びグラフェンチャネルFETを用いたミリ波帯フォトミキシング2014
- Author(s)
  川崎鉄哉, 吉田智洋, 菅原健太, Adrian Dobroiu, 渡辺隆之, 杉山弘樹, 若生洋由希, 可児淳一, 寺田純, 桑野茂, 吾郷浩樹, 河原憲次, 岩月勝美, 末光哲也, 尾辻泰一
- Journal Title
  
  信学技報
  
  Volume: ED2014 Pages: 9-13
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Detection of terahertz and mid-infrared radiations by InP-based asymmetric dual-grating-gate HEMTs2014
- Author(s)
  D. Coquillat, P. Zagrajek, N. Dyakonova, K. Chrzanowski, J. Marczewski, Y. Kurita, A. Satou, K. Kobayashi, S. Boubanga Tombet, V.V. Popov, T. Suemitsu, T. Otsuji, W. Knap
- Journal Title
  
  IRMMW-THz : Int. Conf. on Infrared, Millimeter, and Terahertz Waves Dig
  
  Volume: 1 Pages: 1-2
- DOI
  10.1109/irmmw-thz.2014.6956522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Improved breakdown voltage and RF characteristics in AlGaN/GaN high electron mobility transistors achieved by slant field plates2014
- Author(s)
  Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 7 Issue: 9 Pages: 096501-096501
- DOI
  10.7567/apex.7.096501
- NAID
  210000137238
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24560392
[Journal Article] Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics2014
- Author(s)
  Y. Kurita, G. Ducournau, D. Coquillat, A. Satou, K. Kobayashi, S.A. Boubanga-Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 104 Issue: 25 Pages: 251114-251114
- DOI
  10.1063/1.4885499
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-26820123
[Journal Article] 微細加工Si基板上GOSグラフェンの電荷移動領域観察2014
- Author(s)
  田島圭一郎、井出隆之、永村直佳、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Si (111)基板上に炭素との固相反応で生成したSiC薄膜の評価2014
- Author(s)
  細谷友崇, 三本菅正太, 伊藤俊, 吹留博一, 長澤弘幸, 末光眞希
- Journal Title
  
  第61回応用物理春季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Impact of drain conductance in InGaAs-HEMTs operated in a class-F amplifier2014
- Author(s)
  T. Yoshida, M. Oyama, K. Watanabe, Y. Umeda, T. Otsuji, and T. Suemitsu
- Journal Title
  
  LEC : 2014 Lester Eastman Conference on High Performance Devices Proc
  
  Volume: 1 Pages: 1-4
- DOI
  10.1109/lec.2014.6951560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth2014
- Author(s)
  S. Sambonsuge, L.N. Nikitina, Yu.Yu. Hervieu, M. Suemitsu, S.N. Filimonov
- Journal Title
  
  Russian Physics Journal
  
  Volume: 56 Issue: 12 Pages: 1439-1444
- DOI
  10.1007/s11182-014-0197-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091
[Journal Article] MoS2 FETにおける金属-チャネル界面領域での電荷移動観察2014
- Author(s)
  須藤亮太、田島圭一郎、安川奈那、北田祐太、永村直佳、本間格、堀場弘司、尾嶋正治、吹留博一、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN2014
- Author(s)
  Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu
- Journal Title
  
  Solid State Electron
  
  Volume: 101 Pages: 63-69
- DOI
  10.1016/j.sse.2014.06.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24560392
[Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  M. Suemitsu, S.N. Filimonov
- Journal Title
  
  Asia-Pacific Symposium on Solid Surfaces Abstracts Book
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate2014
- Author(s)
  T. Someya, F. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh. Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 16
- DOI
  10.1063/1.4871381
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23226003, KAKENHI-PROJECT-23560020, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-26287061, KAKENHI-PROJECT-25220707
[Journal Article] Current driven detection of terahertz radiation in dual-grating-gate plasmonic detector2014
- Author(s)
  S.A. Boubanga Tombet, Y. Tanimoto, A. Satou, T. Suemitsu, Y. Wang, H. Minamide, H. Ito, D.V. Fateev, V.V. Popov, and T. Otsuji
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 104 Issue: 26 Pages: 262104-262104
- DOI
  10.1063/1.4886763
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-26820123
[Journal Article] Controlling Planar Defects in 3C-SiC : Ways to Wake it upDevelop 3C-SiC as a Practical Semiconductor2014
- Author(s)
  Hiroyuki Nagasawa, Maki Suemitsu
- Journal Title
  
  ECSCRM2014 : European Conf. on Silicon Carbide and Related Materials Abstracts Book
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Comparative Study on Pristine and Hydrogen-Intercalated Graphene on 4H-SiC(0001) Surface Using Noncontact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  MRS Fall Meeting 2014 Abstracts Book
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact2014
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, and Toyohiko Kinoshita
- Journal Title
  
  Scientific Report
  
  Volume: 4 Issue: 9 Pages: 37131-5
- DOI
  10.1088/0022-3727/47/9/094016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091
[Journal Article] High-Resolution Imaging of Hydrogen-Intercalated Graphene on 4H-SiC(0001) Using Non-Contact Scanning Nonlinear Dielectric Microscopy2014
- Author(s)
  Kohei Yamasue, H. Fukidome, K. Funakubo, M. Suemitsu, Y. Cho
- Journal Title
  
  ICN+T 2014 Abstract Book
  
  Volume: 1 Pages: 58-58
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Noncontact scanning nonlinear dielectric microscopy study of graphene on 4H-SiC(0001) and its hydrogen-intercalation2014
- Author(s)
  Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
- Journal Title
  
  NC-AFM 2014 Book of Abstracts
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs2014
- Author(s)
  T. Yoshida, K. Kobayashi, T. Otsuji, and T. Suemitsu
- Journal Title
  
  Solid State Electron
  
  Volume: 102 Pages: 93-97
- DOI
  10.1016/j.sse.2014.06.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] F級増幅器におけるInGaAs-HEMTゲート寄生遅延時間の影響2014
- Author(s)
  吉田智洋, 小山雅史, 渡邊邦彦, 楳田洋太郎, 尾辻泰一, 末光哲也
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 傾斜型フィールドプレートを用いたAlGaN/GaN HEMTsのRF特性2014
- Author(s)
  畠山信也, 小林健悟, 吉田智洋, 尾辻泰一, 末光哲也
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy2014
- Author(s)
  Hirokazu Fukidome, Kousuke Nagashio, Naoka Nagamura, Keiichiro Tashima, Kazutoshi Funakubo, Koji Horiba, Maki Suemitsu, Akira Toriumi, Masaharu Oshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 6 Pages: 065101-065101
- DOI
  10.7567/apex.7.065101
- NAID
  210000137137
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PUBLICLY-26107503
[Journal Article] グラフェンとNiの界面反応の微視的「その場」観察2014
- Author(s)
  長谷川美佳、吹留博一、小嗣真人, 大河内拓雄, 木下豊彦、伊藤俊、末光眞希
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication2014
- Author(s)
  Hirokazu Fukidome, Takayuki Ide, Yusuke Kawai, Toshihiro Shinohara, Naoka Nagamura, Koji Horiba, Masato Kotsugi, Takuo Ohkochi, Toyohiko Kinoshita, Hiroshi Kumighashira, Masaharu Oshima, Maki Suemitsu
- Journal Title
  
  Scientific Reports
  
  Volume: 4 Issue: 1 Pages: 5173-5173
- DOI
  10.1038/srep05173
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003, KAKENHI-PROJECT-25286053, KAKENHI-PUBLICLY-26107503
[Journal Article] グラフェンチャネルネルFETを用いたミリ波帯フォトミキサー2014
- Author(s)
  菅原健太, 江藤隆紀, 川崎鉄哉, Mastura Hussin, 若生洋由希, 末光哲也, 尾辻泰一, 吾郷浩樹, 河原憲治, 深田陽一, 可児淳一, 寺田純, 吉本直人
- Journal Title
  
  第61回応用物理学会春季学術講演会講演予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] An Improved Self-Aligned Ohmic-Contact Process for Graphene-Channel Field-Effect Transistors2014
- Author(s)
  Hussin Mastura, Kenta Sugawara, Tetsuya Suemitsu, Taiichi Otsuji
- Journal Title
  
  第75回応用物理学会秋季学術講演会予稿集
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Ultrahigh sensitive sub-terahertz plasmonic detector based on asymmetri ual-grating-gate HEMT2014
- Author(s)
  A. Satou, Y. Kurita, G. Ducournau, D. Coquillat, K. Kobayashi, S. Boubanga Tombet, Y.M. Meziani, V.V. Popov, W. Knap, T. Suemitsu, and T. Otsuji
- Journal Title
  
  RJUS TeraTech-2014 : The 3rd Russia-Japan-USA Symp. on Fundamental & Applied Problems of Terahertz Devices & Technologies Proc
  
  Volume: 1 Pages: 21-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene materials and devices for terahertz science and technology2013
- Author(s)
  T. Otsuji, M. Suemitsu, and V. Ryzhii
- Journal Title
  
  APMC : Asia-Pacific Microwave Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Si (110)基板上3C-SiC (111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM評価2013
- Author(s)
  三本菅正太, 長澤弘幸, Sergey Filimonov, 伊藤駿, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェンテラヘルツレーザーとフォトニックデバイス応用の可能性2013
- Author(s)
  尾辻泰一, 佐藤　昭, マキシムリズィー, 佐野栄一, 末光眞希, ヴィクトールリズィー
- Journal Title
  
  電子情報通信学会2013年総合大会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Dielectric-tuned diamondlike carbon materials for an ultrahigh-speed self-aligned graphene channel field effect transistor2013
- Author(s)
  S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  4th Int. Conf. on Smart Materials, Structures, and Systems, CIMTE
  
  Volume: 77 Pages: 270-275
- DOI
  10.4028/www.scientific.net/ast.77.270
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C- SiC (111)/Vicinal Si (111) Substrate2013
- Author(s)
  N. Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
- Journal Title
  
  ALC'13:9th International Symposium on Atomic Level Characterizations for New Materials and Devices' 13
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] 微傾斜Si (111)基板使用によるSi基板上エピタキシャルグラフェンの高品質化2013
- Author(s)
  原本直樹, 猪俣州哉, 三本菅正太, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] From 3C-SiC growth to graphene formation using 4H-AlN (0001)/Si (111) heterostructure2013
- Author(s)
  Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
- Journal Title
  
  2013 JSAP-MRS Joint Symposia : Symposium C
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene Formation on 3C-SiC (111)/4H-AlN (0001) Double Layer Stacking on Si (111) Substrates2013
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Journal Title
  
  The International Conference on Silicon Carbide and Related Materials (ICSCRM2013)
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Site selective epitaxy of graphene on Si wafers2013
- Author(s)
  H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
- Journal Title
  
  Proceeding of the IEEE
  
  Volume: 101 Issue: 7 Pages: 1557-1566
- DOI
  10.1109/jproc.2013.2259131
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003, KAKENHI-PROJECT-25286053
[Journal Article] Graphene-channel FET with -doped diamondlike carbon top-gate dielectrics2013
- Author(s)
  T. Eto, S. Takabayashi, Y. Kurita, M. Yang, H. Hayashi, R. Jesko, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  The 9th International Thin-Film Transistor Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Emergence of Pseudoelectromagnetic Field in Epitaxial Graphene on Microfabricated Substrate2013
- Author(s)
  吹留博一、小嗣真人、川合祐輔、井出隆之、大河内拓雄、木下豊彦、末光眞希
- Journal Title
  
  Hyomen Kagaku
  
  Volume: 34 Issue: 7 Pages: 380-384
- DOI
  10.1380/jsssj.34.380
- NAID
  10031184986
- ISSN
  0388-5321, 1881-4743
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23560003
[Journal Article] High-Performance Graphene Field-Effect Transistors with Extremely small access length using self-aligned source and drain techniques2013
- Author(s)
  M. -H. Jung, G. -H. Park, T. Yoshida, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
- Journal Title
  
  Proceeding of the IEEE
  
  Volume: 101 Issue: 7 Pages: 1603-1608
- DOI
  10.1109/jproc.2013.2258651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053
[Journal Article] グラフェン上Al203ゲート絶縁膜中の「その場」ラマン分光観察2013
- Author(s)
  須藤亮太, 佐藤良, 吹留博一, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-Channel FETs with DLC gate insulator for Photonic Frequency Double-Mixing Conversion over the Sub-THz Band2013
- Author(s)
  T. Kawasaki, T. Eto, K. Kojima, Y. Kurita, Y. Yabe, H. Sugiyama, T. Watanabe, A. Dobroiu, S. Takabayashi, Y. Fukada, J. Kani, J. Terada, N. Yoshimoto, T. Suemitsu, V. Ryzhii, K. Iwatsuki, T. Otsuji
- Journal Title
  
  RPGR2013 : Recent Progress on Graphene Research
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Direct observation of charge transfer region at interfaces in graphene devices2013
- Author(s)
  Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 24 Pages: 241604-241604
- DOI
  10.1063/1.4808083
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24686039
[Journal Article] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces2013
- Author(s)
  S. N. Filimonov, Yu. Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
- Journal Title
  
  ACSIN-12&ICSPM21
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene FETs : Issues and Prospects2013
- Author(s)
  M. Suemitsu
- Journal Title
  
  AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices)
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks2013
- Author(s)
  K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, T. Suemitsu
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 10 Issue: 5 Pages: 790-793
- DOI
  10.1002/pssc.201200609
- NAID
  110009728022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560392
[Journal Article] テラヘルツ通信を志向したダイヤモンドライクカーボンゲート絶縁膜を有するグラフェンFET2013
- Author(s)
  江藤隆紀，鷹林将，栗田裕記，楊猛，林広幸，イェシコラディック，小川修一, 高桑雄二，末光哲也，尾辻泰一
- Journal Title
  
  ゲートスタック研究会第18回研究会研究報告
  
  Volume: 1 Pages: 47-50
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Coherent nanoscale optical-phonon wave packet in graphene layers2013
- Author(s)
  I. Katayama, K. Sato, S. Koga, J. Takeda, S. Hishita, H. Fukidome, M. Suemitsu, and M. Kitajim
- Journal Title
  
  Physical Review B
  
  Volume: 88 Issue: 24
- DOI
  10.1103/physrevb.88.245406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23241034, KAKENHI-PUBLICLY-25104712, KAKENHI-PROJECT-25800177
[Journal Article] Emerging graphene-based electronic & photonic devices, circuits, and systems2013
- Author(s)
  Towe E., Palacios, T. Suemitsu, M.
- Journal Title
  
  Proceeding of the IEEE
  
  Volume: 101 Issue: 7 Pages: 1518-1521
- DOI
  10.1109/jproc.2013.2263615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Low-temperature Formation of Epitaxial Graphene On Silicon Substrate Using Ni silicidation2013
- Author(s)
  長谷川美佳, 菅原健太, 三本菅正太, 原本直樹, 須藤亮太, 吹留博一, 長澤弘幸, 末光眞希
- Journal Title
  
  第74回応用物理学会秋季学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Solution-processed Al203 for gate dielectrics in Top-Gated Graphene Field Effect Transistors2013
- Author(s)
  G. -H. Park, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu
- Journal Title
  
  MNC2013:26th International Microprocesses and Nanotechnology Conference
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Epitaxial Graphene on Silicon Substrates : Current Status and Perspective2013
- Author(s)
  Sai Jiao and Maki Suemitsu
- Journal Title
  
  Energy Materials Nanotechnology (EMN) East Workshop
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] グラフェン/SiC/SiバックゲートFET特性とSiC層厚の関係2012
- Author(s)
  江藤隆紀，鷹林将，三本菅正太，猪俣州哉，吹留博一，末光眞希，末光哲也，尾辻泰一
- Journal Title
  
  第73回応用物理学会学術講演会
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Dielectric-tuned Diamondlike Carbon Materials for a High-performance Self-aligned Graphene-channel Field Effect Transistor2012
- Author(s)
  S. Takabayashi, M. Yang, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  MRS Spring Meeting Proc.
  
  Volume: 1451 Pages: 185-190
- DOI
  10.1557/opl.2012.960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article] Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment2012
- Author(s)
  Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 6S Pages: 06FD10-06FD10
- DOI
  10.1143/jjap.51.06fd10
- NAID
  210000140726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Graphene-based devices in terahertz science and technology2012
- Author(s)
  T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
- Journal Title
  
  J. Phys. D: Applied Physics (招待論文)
  
  Volume: 45 Issue: 30 Pages: 303001-303001
- DOI
  10.1088/0022-3727/45/30/303001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23760300, KAKENHI-PUBLICLY-23104515
[Journal Article] Graphene materials and devices in terahertz science and technology2012
- Author(s)
  T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
- Journal Title
  
  MRS Bulletin
  
  Volume: 37 Issue: 12 Pages: 1235-1243
- DOI
  10.1557/mrs.2012.241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-23760300
[Journal Article] Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates2012
- Author(s)
  Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 6S Pages: 06FD02-06FD02
- DOI
  10.1143/jjap.51.06fd02
- NAID
  210000140718
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Precise control of epitaxy of graphene by microfabricating SiC substrate2012
- Author(s)
  H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications2012
- Author(s)
  H. Fukidome, M. Kotsugi, T. Ohkouchi, A. Yoshigoe, Y. Teraoka, Y. Enta, T. Kinoshita, T. Suemitsu, T. Otsuji, and M. Suemitsu
- Journal Title
  
  MRS Spring Meeting Proc.
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Carrier remote doping effect in graphene-channel FET’s with diamondlike carbon gate dielectrics2012
- Author(s)
  S. Takabayashi, M. Yang, T. Eto, H. Hayashi, S. Ogawa, Y. Takakuwa, T. Suemitsu, and T. Otsuji
- Journal Title
  
  ISGD: International Symposium on Graphene Devices
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Spectroscopic study on ultrafast carrier dynamics and terahertz amplified stimulated emission in optically pumped graphene2012
- Author(s)
  T. Otsuji, S. Boubanga-Tombet, A. Satou, M. Suemitsu, and V. Ryzhii
- Journal Title
  
  J. Infrared Milli. Terhertz Waves
  
  Volume: 33 Issue: 8 Pages: 825-838
- DOI
  10.1007/s10762-012-9908-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Oxygen-plasma formation of alumina for a gate dielectric in graphene field effect transistors2012
- Author(s)
  G.H. Park, M.H. Jung, H. Fukidome, T. Suemitsu, T. Otsuji, M. Suemitsu
- Journal Title
  
  ISGD: International Symposium on Graphene Devices
  
  Volume: 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] ダイヤモンドライクカーボン絶縁膜を用いたグラフェンFET2012
- Author(s)
  鷹林　将・楊　猛・小川修一・林　広幸・栗田裕記・高桑雄二・末光哲也・尾辻泰一
- Journal Title
  
  信学会電子デバイス研究会, 信学技報
  
  Volume: 112 Pages: 67-72
- NAID
  110009626397
- Data Source
  KAKENHI-PROJECT-23000008
[Journal Article] Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition2012
- Author(s)
  M. Yang, S. Ogawa, S. Takabayashi, T. Otsuji, and Y. Takakuwa
- Journal Title
  
  Thin Solid Films
  
  Volume: 523 Pages: 25-28
- DOI
  10.1016/j.tsf.2012.05.059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-24760247
[Journal Article]2011
- Author(s)
  Tetsuya Suemitsu(2番目), Taiichi Otsuji(3番目), 他5名
- Journal Title
  
  Phys. Stat. Solidi
  
  Volume: Vol.8, No.2 Pages: 346-348
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article]2010
- Author(s)
  Taiichi Otsuji(1番目), Tetsuya Suemitsu(4番目), Eiichi Sano(6番目), Victor Ryzhii(8番目), 他4名
- Journal Title
  
  Comptes Rendus Physique
  
  Volume: Vol.11 Pages: 421-432
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article]2009
- Author(s)
  Y. Tsuda, T. Komori, A. El Fatimy, Tetsuya Suemitsu, Taiichi Otsuji
- Journal Title
  
  J. Opt. Soc. Am. B
  
  Volume: Vol.26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article]2009
- Author(s)
  Tetsuya Suemitsu(4番目), Taiichi Otsuji(6番目), 他4名
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article] Emission of terahertz radiation from dual-grating-gates plasmon- resonant emitters fabricated with InGaP/InGaAs/GaAs material systems2008
- Author(s)
  T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov
- Journal Title
  
  J. Phys.: Condens. Matters Vol. 20
  
  Pages: 384206-384206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article]2008
- Author(s)
  Taiichi Otsuji, Yahya M. Meziani, T. Nishimura, Tetsuya Suemitsu, W. Knap, Eiichi Sano, T. Asano, V. V. Popov
- Journal Title
  
  J. Phys.: Condens. Matters
  
  Volume: Vol.20 Pages: 384206-384206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article] Graphene/SiC/Si Group-IV Heterostructure Transistors2008
- Author(s)
  末光哲也
- Journal Title
  
  14th European Workshop on Heterostruct ure Technology (HETECH 2008) 1
  
  Pages: 135-136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Journal Article] Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure2007
- Author(s)
  末光哲也
- Journal Title
  
  65th Device Research Conference(DRC)Dig. 1
  
  Pages: 157-158
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106006
[Presentation] Evidence of carrier trapping at extrinsic gate region in N-polar GaN/AlGaN MIS HEMTs2021
- Author(s)
  K. Prasertsuk, T. Suemitsu and T. Matsuoka
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02165
[Presentation] Impact of polarization-induced charges on Schottky barrier height of polar GaN2021
- Author(s)
  T. Suemitsu and I. Makabe
- Organizer
  13th International Symposium on Advanced Plasma Sciene and its Applications for Nitrides and Nanomaterials (ISPlasma)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02165
[Presentation] 分極電荷の広がりを考慮したGa極性・N極性の実効ショットキー障壁高さモデル2020
- Author(s)
  末光哲也, 眞壁勇夫
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02165
[Presentation] Effective Schottky barrier height model for Ga- and N-polar GaN by polarization-induced surface charges with finite depth2019
- Author(s)
  Suemitsu Tetsuya、Makabe Isao
- Organizer
  International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02165
[Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] 窒素極性GaN MIS-HEMT における逆バイアスアニールの効果2018
- Author(s)
  末光哲也, K. Prasertsuk, 谷川智之, 木村健司, 窪谷茂幸, 松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] 窒素極性GaN HEMT の現状と今後の展望2018
- Author(s)
  末光哲也
- Organizer
  日本学術振興会第162委員会第112研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
- Organizer
  MRS Fall Meeting 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Advanced plasma process for GaN high electron mobility transistors2018
- Author(s)
  T. Suemitsu
- Organizer
  International Workshop on Plasma and Bionano Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, T. Suemitsu, T. Matsuoka
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Threshold voltage engineering of recessed MIS-gate N-polar GaN HEMTs2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] Reduced gate leakage current in N-polar GaN MIS-HEMTs2017
- Author(s)
  K. Prasertsuk, A. Miura, S. Tanaka, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] AlGaN/GaN HEMTのゲートリセス構造形成における中性粒子ビームエッチング適用効果2017
- Author(s)
  渡村遥、邉見ふゆみ、C.トーマス、Y.C.ライ、肥後昭男、寒川誠二、尾辻泰一、末光哲也
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates2016
- Author(s)
  Maki Suemitsu
- Organizer
  2016 MRS Spring Meeting & Exhibit
- Place of Presentation
  Phoenix Convention Center (Pheonix, AZ, USA)
- Year and Date
  2016-03-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンFETにおける真性トランジスタパラメータ抽出用モデルの評価2016
- Author(s)
  満塩純希, 玉虫元, 菅原健太, 佐藤昭, 末光哲也, 吹留博一, 末光眞希, 尾辻藤一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学(東京都目黒区大岡山)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Impact of neutral beam etching on isolation leakage current and breakdown voltage in AlGaN/GaN HEMTs2016
- Author(s)
  F. Hemmi, C. Thomas, Y. C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, T. Suemitsu
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching2016
- Author(s)
  F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, and T. Suemitsu
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04341
[Presentation] The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs2016
- Author(s)
  F. Hemmi, C. Thomas, Y. C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, T. Otsuji, T. Suemitsu
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] THz devices based on plasmons in 2D electron systems2016
- Author(s)
  A. Satou, T. Watanabe, T. Suemitsu, V. Ryzhii, D. Fateev, V. V. Popov, and T. Otsuji
- Organizer
  XX International Symposium"Nanophysics & Nanoelectronics"
- Place of Presentation
  The sanatorium "Motorist" (Nizhny Novgorod, Russia)
- Year and Date
  2016-03-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse2016
- Author(s)
  F. Hemmi, C. Thomas, Y. C. Lai, A. Higo, S. Samukawa, T. Otsuji, T. Suemitsu
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  Washington DC, USA
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] Si基板上3C-SiCヘテロエビ成長とエピタキシャルグラフェン2016
- Author(s)
  末光眞希
- Organizer
  第8回九大グラフェン研究会
- Place of Presentation
  九州大学(福岡県春日市)
- Year and Date
  2016-01-29
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンチャネルFETにおける真性キャリア移動度の抽出2015
- Author(s)
  玉虫元, 菅原健太, 吹留博一, 末光眞希, 尾辻泰一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Drain depletion length in InAlN/GaN MIS-HEMTs with slant field plates2015
- Author(s)
  N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Kimura, T. Matsuoka, T. Otsuji, and T. Suemitsu
- Organizer
  42nd International Symposium on Compound Semiconductors
- Place of Presentation
  Santa Barbara, USA
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13963
[Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals2015
- Author(s)
  Maki Suemitsu
- Organizer
  IEFM 2015 : International symposium on emerging functional materials
- Place of Presentation
  Songdo Convensia (Incheon, Korea)
- Year and Date
  2015-11-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene formation on SiC and on Si substrates2015
- Author(s)
  Maki Suemitsu
- Organizer
  PSS 2015 : Physical Sciences Symposia-2015
- Place of Presentation
  Courtyard Marriott (Cambridge, MA, USA)
- Year and Date
  2015-09-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンチャネルFETにおける真性パラメータの抽出2015
- Author(s)
  玉虫元, 菅原健太, 佐藤昭, 田島圭一郎, 吹留博一, 末光眞希, 尾辻泰一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東北大学(宮城県仙台市)
- Year and Date
  2015-12-22
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High carrier mobility graphene-channel FET using SiN gate stack2015
- Author(s)
  G. Tamamushi, K. Sugawara, M. B. Hussin, T. Suemitsu, R. Suto, H. Fukidome, M. Suemitsu, and T. Otsuji
- Organizer
  CSW 2015 : Compound Semiconductor Week 2015, ISCS : The 42nd International Symposium on Compound Semiconductors
- Place of Presentation
  UCSB(米国カリフォルニア州サンタバーバラ市)
- Year and Date
  2015-06-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015 : the international conference on Smart Engineering of New
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si (110)2015
- Author(s)
  Maki Suemitsu
- Organizer
  SENM2015 : the international conference on Smart Engineering of New Materials
- Place of Presentation
  Andel's Hotel (Lodz, Poland)
- Year and Date
  2015-06-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014
- Author(s)
  Maki Suemitsu
- Organizer
  Asia-Pacific Symposium on Solid Surfaces
- Place of Presentation
  Vladivostok, Russia
- Year and Date
  2014-09-30
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンのディスプレイ応用の可能性2014
- Author(s)
  末光眞希
- Organizer
  CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会(EID)
- Place of Presentation
  幕張、千葉, 日本
- Year and Date
  2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Growth of epitaxial graphene on SiC and its application to FET2014
- Author(s)
  Maki Suemitsu
- Organizer
  2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
- Place of Presentation
  Kuala Lumpur, Malaysia
- Year and Date
  2014-10-20
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems2014
- Author(s)
  末光眞希
- Organizer
  EXMATEC 2014
- Place of Presentation
  Delphi, Greece
- Year and Date
  2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 多層SiCNを用いて作製した傾斜型フィールドプレートによるAlGaN/GaN HEMTにおける電流コラプスの抑制2014
- Author(s)
  小林健悟、畠山信也、吉田智洋、矢部裕平、D. Piedra、T. Palacios、尾辻泰一、末光哲也
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術2014
- Author(s)
  末光眞希
- Organizer
  第11回Cat-CVD研究会
- Place of Presentation
  仙台, 日本
- Year and Date
  2014-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] InAlN/GaN HEMTsとAlGaN/GaN HEMTsにおける相互コンダクタンスの周波数分散2014
- Author(s)
  畠山信也、小林健悟、吉田智洋、尾辻泰一、末光哲也
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] Epitaxial Graphene on Silicon Substrates : Tailoring the Properties through Crystal Faces2014
- Author(s)
  末光眞希
- Organizer
  2014 Tsukuba Nanotechnology Symposium (TNS'14)
- Place of Presentation
  つくば, 日本
- Year and Date
  2014-07-26
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Fabrication of slant field plates for AlGaN/GaN HEMTs by multi-layer SiCN2013
- Author(s)
  S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, T. Suemitsu
- Organizer
  10th Topical Workshop on Heterostructure Microelectronics (TWHM)
- Place of Presentation
  北海道函館市
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] グラフェンデバイスの現状と課題2013
- Author(s)
  末光眞希
- Organizer
  日本学術振興会産学協力研究委員会ナノプローブテクノロジー第167委員会主催の第70回研究会「グラフェン・シリセン・CNT」
- Place of Presentation
  東京
- Year and Date
  2013-04-18
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Solution-Processed Al2O3 for a Gate Dielectric in Graphene Field Effect Transistors2013
- Author(s)
  Goon-Ho Park, Won-Ju Cho and Maki Suemitsu
- Organizer
  TeraNano Student Seminar 2013
- Place of Presentation
  ビュルツブルグ, ドイツ
- Year and Date
  2013-03-03
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN2013
- Author(s)
  K. Kobayashi, S. Hatakeyama, T. Yoshida, D. Piedra, T. Palacios, T. Otsuji, T. Suemitsu
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  Bethesda, MD, USA
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] Graphene FETs : Issues and Prospects2013
- Author(s)
  M. Suemitsu
- Organizer
  20 anniv. AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  京都
- Year and Date
  2013-07-04
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene formation on Si substrates : its history and current status・Session VII : Graohene Electronics, Plasmonics & Silicon Technology2013
- Author(s)
  Maki Suemitsu
- Organizer
  Physical Sciences Symposium-2013
- Place of Presentation
  Boston, USA
- Year and Date
  2013-09-05
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Heteroepitaxy of 3C-SiC and Formation of Epitaxial Graphene2013
- Author(s)
  末光眞希
- Organizer
  半導体に関する日露合同セミナー
- Place of Presentation
  仙台
- Year and Date
  2013-11-07
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Si基板上エピタキシャルグラフェンの放射光PES評価2013
- Author(s)
  末光眞希
- Organizer
  平成24年度文部科学省ナノテクノロジプラットフォーム事業　微細構造解析プラットフォーム　「放射光実験設備利用講習会・放射光利用研究セミナー」
- Place of Presentation
  大阪, 日本
- Year and Date
  2013-02-15
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 多層SiCN絶縁膜によるAlGaN/GaN HEMT用傾斜フィールドプレートの形成2013
- Author(s)
  小林健悟，吉田智洋，畠山信也，尾辻泰一，末光哲也
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  岐阜
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] SiC上エピタキシャルグラフェンの成長過程とグラフェン・オン・シリコン技術2013
- Author(s)
  末光眞希
- Organizer
  日本物理学会
- Place of Presentation
  徳島
- Year and Date
  2013-09-25
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High Speed Graphene Field-effect Transistors Using Self-aligned Source and Drain Formation Technique2012
- Author(s)
  Maki Suemitsu
- Organizer
  Nano-S&T (Nano Sciences & Technologies2012)
- Place of Presentation
  Qingdao, China
- Year and Date
  2012-10-28
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 基板相互作用によるグラフェンの電子状態制御2012
- Author(s)
  吹留博一,川合祐輔, 末光眞希
- Organizer
  電子デバイス研究会(ED)
- Place of Presentation
  山形, 日本
- Year and Date
  2012-04-18
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy2012
- Author(s)
  Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Maki Suemitsu, Kousuke Nagashio, Akira Toriumi and Masaharu Oshima
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-07
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微細加工Si(100)基板上3C-SiC薄膜へのエピタキシャルグラフェン形成2012
- Author(s)
  井出隆之，川合祐輔，宮下英俊，吹留博一，末光眞希
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High Frequency Performance of Graphene Field-Effect Transistors with Extremely Small Access Length2012
- Author(s)
  Maki Suemitsu
- Organizer
  3rd International Symposium on Terahertz Nanoscience (TeraNanoⅢ)
- Place of Presentation
  ハワイ, 米国
- Year and Date
  2012-12-10
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Qualified Graphene-On-Silicon Formation Using 3C-SiC(111)/Si(110) Thick Film By Two-Step Growth2012
- Author(s)
  Shota Sambonsuge, Eiji Saito, Sergey Fimimonov, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 3次元nanoESCAを用いたグラフェンデバイス構造の実空間分解界面電子状態分析2012
- Author(s)
  永村直佳、堀場弘司、豊田智史、黒角翔大、篠原稔宏、井出隆之、吹留博一、末光眞希、長汐晃輔、鳥海明、尾嶋正治
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Definite Observation of Interfacial Charge Transfer in Graphene Transistor by Using Soft X-ray 3D Scanning Photoelectron Microscopy2012
- Author(s)
  Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima
- Organizer
  SSDM (2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都, 日本
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微傾斜Si(111)基板上エピタキシャルグラフェン成長2012
- Author(s)
  原本直樹、猪俣州哉、高橋良太、吉越章隆、寺岡有殿、吹留博一、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] In situ Observation of Graphene during Gate Oxide Formation using Raman Spectroscopy2012
- Author(s)
  R. Sato, H. Fukidome and M. Suemitsu
- Organizer
  MNC2012 (25th International Microprocesses and Nanoetechnology Conference)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-11-01
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Improvement Of Epitaxial Graphene On Silicon By Use Of Vicinal Si (111) Substrates2012
- Author(s)
  Naoki Haramoto, Syuya Inomata, Ryota Takahashi, Akitaka Yoshigoe, Yuden Teraoka, Hirokazu Hukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 3C-SiC(111)/Si(111)薄膜上グラフェンの電子構造の評価2012
- Author(s)
  猪俣州哉、半田浩之、高橋良太、今泉京、原本直樹、吹留博一、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Controls of Structural, Electronic, and Pseudofield Properties of Epitaxial Graphene by Microfabrication2012
- Author(s)
  Hirokazu Fukidome, Yusuke Kawai, Masato Kotsugi, Felix Fromm, Takayuki Ide, Takuo Ohkouchi, Hidetoshi Miyashita, Toyohiko Kinoshita, Maki Suemitsu1, Thomas Seyller
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxy Of Graphene On Si(100) And Si(111) Faces Simultaneously Formed On Si(100) Substrate2012
- Author(s)
  Takayuki Ide, Yusuke Kawai, Hirokazu Fukidome, Hidetoshi Miyashita,Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta,Toyohiko Kinoshita, Koji Horiba, Naoka Nagamura, Satoshi Toyoda,Toshihiro Shinohara, Masaharu Oshima, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy2012
- Author(s)
  Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu
- Organizer
  ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  サンクトペテルブルク, ロシア
- Year and Date
  2012-09-04
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon2012
- Author(s)
  Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov
- Organizer
  ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  サンクトペテルブルク, ロシア
- Year and Date
  2012-09-03
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] SiC薄膜を介したSi基板上エピタキシャルグラフェン製膜とグラフェンデバイス2012
- Author(s)
  末光眞希
- Organizer
  光ナノサイエンス特別講演会
- Place of Presentation
  奈良, 日本
- Year and Date
  2012-09-19
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 回転エピ成長3C-SiC(111)/Si(110)の厚膜化による高品質グラフェン形成2012
- Author(s)
  Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu Eiji Saito, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Electronic structure observations of graphene on 3C-SiC(111)/Si(111)2012
- Author(s)
  Syuya Inomata, Ryota Takahashi, Hiroyuki Handa, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy2012
- Author(s)
  H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu
- Organizer
  VAS14(14th International Conference on Vibrations at Surfaces)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial Graphene Formation on 3C-SiC/Si Thin Films2012
- Author(s)
  Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Epitaxial graphene on silicon2012
- Author(s)
  Maki Suemitsu, Hirokazu Fukidome
- Organizer
  ANM2012(4th International Conference on Advanced Nano Materials)
- Place of Presentation
  Chennai, India
- Year and Date
  2012-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] THz Coherent Phonons in Graphene on Silicon2012
- Author(s)
  M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)
- Organizer
  第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)
- Place of Presentation
  沖縄
- Year and Date
  2012-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] In-situ Raman Observation of Graphene during Formation of Al-oxide Gate Dielectrics2012
- Author(s)
  Ryo Sato, Hirokazu fukidome,Maki Suemitsu
- Organizer
  ISGD-3（3rd Internatinal Symposium on Graphene Devices)
- Place of Presentation
  サン・トーバン, フランス
- Year and Date
  2012-11-08
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 界面応力制御によるグラフェンの擬スカラーポテンシャルの創出2012
- Author(s)
  吹留博一、川合祐輔、フロムフェリックス、小嗣真人、半田浩之、井出隆之、大河内拓雄、宮下英俊、遠田義晴、木下豊彦、トーマスザイラー、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Plasma-oxidized Al2O3 for　Gate　Dielectrics in　Graphene Field　Effect　Transistors2012
- Author(s)
  G.-H. Park, M.-H. Jung, S. Inomata,　H. Fukidome, T. Suemitsu, T. Otsuji　and M. Suemitsu
- Organizer
  MNC2012(25th International Microprocesses and Nanotechnology Conference)
- Place of Presentation
  神戸, 日本
- Year and Date
  2012-11-02
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微細加工Si(100)基板上エピタキシャルグラフェンの形成と物性評価2012
- Author(s)
  井出隆之，川合祐輔，吹留博一，宮下英俊、小嗣正人、大河内拓雄、遠田義晴、木下豊彦、堀場弘司、永村直佳、篠原稔宏、尾嶋正治、末光眞希
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  仙台, 日本
- Year and Date
  2012-11-20
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] 微傾斜Si(111)基板を用いたグラフェン・オン・シリコン2012
- Author(s)
  Naoki Haramoto,Syuya Inomata,Shota Sanbonsuge,Akitaka Yoshigoe,Yuden Teraoka,Hirokazu Fukidome,Maki Suemitsu
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山, 日本
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] SiC薄膜を介したSi基板上エピタキシャルグラフェンの形成2011
- Author(s)
  末光眞希
- Organizer
  第31回表面科学学術講演会
- Place of Presentation
  東京都江戸川区(招待)
- Year and Date
  2011-12-16
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Growth of epitaxial graphene on 3C-SiC/Si heterostructure2011
- Author(s)
  末光眞希
- Organizer
  HeteroSiC-WASMPE 2011
- Place of Presentation
  Tours, France
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] XTEM characterization of epitaxial graphene formed on non-basal SiC surfaces2011
- Author(s)
  末光眞希
- Organizer
  International Conference on New Diamond and Nano Carbons 2011
- Place of Presentation
  島根県松江市
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] グラフェンのエピタキシャル成長法2011
- Author(s)
  末光眞希
- Organizer
  応用物理学会第49回応用物理学会スクール-グラフェンの基礎から応用まで
- Place of Presentation
  山形県山形市(invited)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene/SiC/Si FETs with SiCN Gate Stack2011
- Author(s)
  末光哲也
- Organizer
  220th ECS Meeting
- Place of Presentation
  Boston, MA, USA
- Year and Date
  2011-10-12
- Data Source
  KAKENHI-PROJECT-23000008
[Presentation] Graphene/SiC/Si Group-IV Heterostructure Transistors2008
- Author(s)
  末光哲也
- Organizer
  HETECH 2008 : 14th European Workshop on Heterostructure Technology
- Place of Presentation
  Venice, Italy
- Year and Date
  2008-11-03
- Data Source
  KAKENHI-PROJECT-18106006
[Presentation] Broadband Terahertz Emission from Dual-Grating Gate HEMT's -Mechanism and Emission Spectral Profile2008
- Author(s)
  T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y.M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V. Popov, D. Coquillat, and F. Teppe
- Organizer
  Device Research Conference (DRC), Santa Barbara, CA
- Place of Presentation
  USA
- Year and Date
  2008-06-24
- Data Source
  KAKENHI-PROJECT-18106006
[Presentation] Broadband Terahertz Emission from Dual-Grating Gate HEMT's-Mechanism and Emission Spectral Profile2008
- Author(s)
  T. Nishimura, H. Hanabe, H. Tsuda, Tetsuya Suemitsu, Yahya M. Meziani, Taiichi Otsuji, W. Knap, Eiichi Sano
- Organizer
  DRC : 66th Device Research Conf.
- Place of Presentation
  Santa Barbara
- Year and Date
  2008-06-24
- Data Source
  KAKENHI-PROJECT-18106006
[Presentation] Novel plasmon-resonant terahertz-wave emitter using a double-decked HEMT structure2007
- Author(s)
  末光哲也
- Organizer
  65th Device Research Conference(DRC)
- Place of Presentation
  Notre Dame, USA
- Year and Date
  2007-06-19
- Data Source
  KAKENHI-PROJECT-18106006
[Presentation] SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT
- Author(s)
  小林健悟，吉田智洋，尾辻泰一，片山竜二，松岡隆志，末光哲也
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] RF characteristics of AlGaN/GaN HEMTs with slant field plates
- Author(s)
  S. Hatakeyama, K. Kobayashi, T. Yoshida, T. Otsuji, and T. Suemitsu
- Organizer
  41st International Symposium on Compound Semiconductors
- Place of Presentation
  フランス・モンペリエ
- Year and Date
  2014-05-11 – 2014-05-15
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] 傾斜型フィールドプレートを用いたAlGaN/GaN HEMTのRF特性
- Author(s)
  畠山信也, 小林健悟, 吉田智洋, 尾辻泰一, 末光哲也
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-16 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] Drain depletion length in InAlN/GaN MIS-HEMTs with slant field plates
- Author(s)
  N. Yasukawa, S. Hatakeyama, T. Yoshida, T. Kimura, T. Matsuoka, T. Otsuji, and T. Suemitsu
- Organizer
  42nd International Symposium on Compound Semiconductors
- Place of Presentation
  アメリカ・サンタバーバラ
- Year and Date
  2015-06-28 – 2015-07-02
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] A new process approach for slant field plates in GaN-based HEMTs
- Author(s)
  T. Suemitsu, K. Kobayashi, S. Hatakeyama, N. Yasukawa, T. Yoshida, T. Otsuji, D. Piedra, and T. Palacios
- Organizer
  th International Symposium on Advanced Plasma Science and its Applications for Nitride and Nanomaterials
- Place of Presentation
  名古屋
- Year and Date
  2015-03-26 – 2015-03-31
- Invited
- Data Source
  KAKENHI-PROJECT-24560392
[Presentation] InAlN/GaN HEMTs における傾斜型フィールドプレトによるドレイン空乏領域長への影響
- Author(s)
  安川奈那, 畠山信也, 吉田智洋, 尾辻泰一, 末光哲也
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  平塚
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560392

1. RYZHII Victor (90254078)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
2. OTSUJI Taiichi (40315172)

# of Collaborated Projects: 2 results

# of Collaborated Products: 58 results
3. SANO Eiichi (10333650)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
4. 松岡隆志 (40393730)

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
5. NARAHARA Koichi (00422171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. MEZIANI Yahya moubarak (80436162)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
7. SUEMITSU Maki (00134057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 144 results
8. SATOU Akira (70510410)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
9. MAXIM Ryzhii (50254082)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. FUKIDOME Hirokazu (10342841)

# of Collaborated Projects: 1 results

# of Collaborated Products: 67 results
11. 橋詰保 (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 重川直輝 (60583698)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 大野裕 (80243129)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 高橋琢二 (20222086)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. WATANABE Takayuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
16. BOUBANGA-TOMBET Stephane

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
17. TAKABAYASHI Susumu

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
18. TAKAKUWA Yuzi

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
19. AGO Hiroki

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
20. KAWAHARA Kenji

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
21. DUBINOV Alexander

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. POPOV Vyacheslav

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
23. SVINTSOV Dmitry

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. MITIN Vladimir

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. SHUR Michael

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
26. NAGASAWA Hiroyuki

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
27. YAMASUE Kohei

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
28. マキシムリズイー

# of Collaborated Projects: 0 results

# of Collaborated Products: 9 results
29. 焦賽

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
30. 吉越章隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
31. 寺岡有殿

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
32. 谷川智之

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

SUEMITSU Tetsuya 末光 哲也

末光 哲也 スエミツ テツヤ

Research Projects

Research Products

Co-Researchers

窒化物半導体における選択極性反転技術の構築とn型p型領域同時形成への応用の研究Principal Investigator

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Study on traveling wave amplification in semiconductorsPrincipal Investigator

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Study on N-polar GaN MIS-HEMTs for power devicesPrincipal Investigator

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Study on nitrogen-polar InGaAs-channel high electron mobility transistorsPrincipal Investigator

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Study on GaN-based vertical transistors using ScAlMgO4 substratesPrincipal Investigator

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Detail evaluation of electron velocity in GaN HEMTsPrincipal Investigator

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Creation of graphene terahertz lasers

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Exploring Novel Electromagnetic Circuits Based on Management of Low-Dimensional Plasmonic Dispersion

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[Book] グラフェンが拓く材料の新領域2012

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[Book] グラフェンの最先端技術と拡がる応用 ―グラフェンの材料科学、成長・合成技術、各種デバイス応用―2012

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[Book] グラフェンの最先端技術と拡がる応用2012

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[Journal Article] Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors2021

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[Journal Article] Effective Schottky Barrier Height Model for N‐Polar and Ga‐Polar GaN by Polarization‐Induced Surface Charges with Finite Thickness2020

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[Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018

Author(s)

SUEMITSU Tetsuya 末光哲也

末光哲也スエミツテツヤ